PD - 93907

AUTOMOTIVE MOSFET IRF1407

Typical Applications HEXFET Power MOSFET
Integrated Starter Alternator
42 Volts Automotive Electrical Systems D
VDSS = 75V
Benefits
Advanced Process Technology
Ultra Low On-Resistance RDS(on) = 0.0078
G
Dynamic dv/dt Rating
175C Operating Temperature ID = 130AV
Fast Switching S
Repetitive Avalanche Allowed up to Tjmax

Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET Power MOSFETs utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET are a 175C junction
operating temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications. TO-220AB

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25C Continuous Drain Current, VGS @ 10V 130V
ID @ TC = 100C Continuous Drain Current, VGS @ 10V 92V A
IDM Pulsed Drain Current Q 520
PD @TC = 25C Power Dissipation 330 W
Linear Derating Factor 2.2 W/C
VGS Gate-to-Source Voltage 20 V
EAS Single Pulse Avalanche EnergyR 390 mJ
IAR Avalanche CurrentQ See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche EnergyW mJ
dv/dt Peak Diode Recovery dv/dt S 4.6 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 lbfin (1.1Nm)

Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case 0.45
RCS Case-to-Sink, Flat, Greased Surface 0.50 C/W
RJA Junction-to-Ambient 62

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10/11/01

This datasheet has been downloaded from http://www.digchip.com at this page

IRF1407
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 V VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.09 V/C Reference to 25C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance 0.0078 VGS = 10V, ID = 78A T
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = 10V, ID = 250A
gfs Forward Transconductance 74 S VDS = 25V, ID = 78A
20 VDS = 75V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
250 VDS = 60V, VGS = 0V, TJ = 150C
Gate-to-Source Forward Leakage 200 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage -200 VGS = -20V
Qg Total Gate Charge 160 250 ID = 78A
Qgs Gate-to-Source Charge 35 52 nC VDS = 60V
Qgd Gate-to-Drain ("Miller") Charge 54 81 VGS = 10VT
td(on) Turn-On Delay Time 11 VDD = 38V
tr Rise Time 150 ID = 78A
ns
td(off) Turn-Off Delay Time 150 RG = 2.5
tf Fall Time 140 VGS = 10V T
Between lead, D
LD Internal Drain Inductance 4.5
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance 7.5
and center of die contact S

Ciss Input Capacitance 5600 VGS = 0V

Coss Output Capacitance 890 pF VDS = 25V
Crss Reverse Transfer Capacitance 190 = 1.0KHz, See Fig. 5
Coss Output Capacitance 5800 VGS = 0V, VDS = 1.0V, = 1.0KHz
Coss Output Capacitance 560 VGS = 0V, VDS = 60V, = 1.0KHz
Coss eff. Effective Output Capacitance U 1100 VGS = 0V, VDS = 0V to 60V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
130V
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

520
(Body Diode) Q p-n junction diode. S

VSD Diode Forward Voltage 1.3 V TJ = 25C, IS = 78A, VGS = 0VT

trr Reverse Recovery Time 110 170 ns TJ = 25C, IF = 78A
Qrr Reverse RecoveryCharge 390 590 nC di/dt = 100A/s T
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
Q Repetitive rating; pulse width limited by U Coss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See fig. 11).
as Coss while VDS is rising from 0 to 80% VDSS .
R Starting TJ = 25C, L = 0.13mH
VCalculated continuous current based on maximum allowable
RG = 25, IAS = 78A. (See Figure 12).
junction temperature. Package limitation current is 75A.
S ISD 78A, di/dt 320A/s, VDD V(BR)DSS,
TJ 175C WLimited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
T Pulse width 400s; duty cycle 2%. avalanche performance.

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 IRF1407

1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
ID , Drain-to-Source Current (A)

ID , Drain-to-Source Current (A)

7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
100 5.0V 100 5.0V
BOTTOM 4.5V BOTTOM 4.5V
4.5V
4.5V

10 10

20s PULSE WIDTH 20s PULSE WIDTH

Tj = 25C Tj = 175C
1 1
0.1 1 10 100 0.1 1 10 100

VDS, Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000.00 3.0

I D = 130A

T J = 25C
ID , Drain-to-Source Current ( )

2.5
TJ = 175C
R DS(on) , Drain-to-Source On Resistance

2.0
(Normalized)

100.00 1.5

1.0

0.5
VDS = 15V

10.00
20s PULSE WIDTH 
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
3.0 5.0 7.0 9.0 11.0 13.0
TJ , Junction Temperature ( C)
VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

vs. Temperature
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IRF1407

100000


15
VGS = 0V, f = 1 MHZ 
ID = 78A
V DS = 60V
Ciss = Cgs + Cgd , Cds SHORTED V DS = 37V
Crss = Cgd V DS = 15V
12
Coss = Cds + Cgd
C, Capacitance(pF)

10000

VGS, Gate-to-Source Voltage (V)

Ciss 9

6
Coss
1000

3
Crss

100 0
0 40 80 120 160 200
1 10 100
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000.00 10000

OPERATION IN THIS AREA

ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)

TJ = 175C LIMITED BY R DS (on)

100.00 1000

10.00 100
T J = 25C 100sec

1.00 10 1msec
Tc = 25C
VGS = 0V Tj = 175C
10msec
Single Pulse
0.10 1
0.0 1.0 2.0 3.0 1 10 100 1000
VSD , Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRF1407

140
RD

LIMITED BY PACKAGE VDS
120
VGS
D.U.T.
100
RG
+
-VDD
I D , Drain Current (A)

80
10V
Pulse Width 1 s
60 Duty Factor 0.1 %

40 Fig 10a. Switching Time Test Circuit

20 VDS
90%
0
25 50 75 100 125 150 175

TC , Case Temperature ( C)

10%
VGS
Fig 9. Maximum Drain Current vs.
td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

D = 0.50
(Z thJC)

0.1 0.20

0.10

0.05
Thermal Response


0.02
0.01
 SINGLE PULSE
(THERMAL RESPONSE)
P DM

0.01
t1

t2

0.001
 Notes:
1. Duty factor D =
2. Peak T
t1 / t

J = P DM x Z thJC
2
+T C

0.00001 0.0001 0.001 0.01 0.1 1

t 1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF1407


650
1 5V
ID
TOP 32A
55A
L D R IV E R 520 BOTTOM 78A
VDS

EAS , Single Pulse Avalanche Energy (mJ)

RG D .U .T + 390
V
- DD
IA S A
20V
tp 0 .0 1
260

Fig 12a. Unclamped Inductive Test Circuit

V (B R )D SS
130
tp

0
25 50 75 100 125 150 175

Starting T , Junction
J Temperature ( C)

IAS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
QG

10 V
QGS QGD 3.5
VGS(th) Gate threshold Voltage (V)

VG
3.0

ID = 250A
Charge
Fig 13a. Basic Gate Charge Waveform 2.5
Current Regulator
Same Type as D.U.T.

50K
2.0
12V .2F
.3F

+
V
D.U.T. - DS
1.5
VGS -75 -50 -25 0 25 50 75 100 125 150 175 200
3mA T J , Temperature ( C )

IG ID
Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage vs. Temperature
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 IRF1407

1000

Duty Cycle = Single Pulse

Allowed avalanche Current vs

Avalanche Current (A)

100 0.01 avalanche pulsewidth, tav

assuming Tj = 25C due to
avalanche losses

0.05

10
0.10

1
1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

400 Notes on Repetitive Avalanche Curves , Figures 15, 16:

TOP Single Pulse (For further info, see AN-1005 at www.irf.com)
BOTTOM 10% Duty Cycle 1. Avalanche failures assumption:
ID = 78A Purely a thermal phenomenon and failure occurs at a
EAR , Avalanche Energy (mJ)

300 temperature far in excess of Tjmax. This is validated for

every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
200 3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
100
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25C in Figure 15, 16).
0
t av = Average time in avalanche.
25 50 75 100 125 150 175
D = Duty cycle in avalanche = t av f
Starting T J , Junction Temperature (C) ZthJC(D, tav) = Transient thermal resistance, see figure 11)

PD (ave) = 1/2 ( 1.3BVIav) = T/ ZthJC

Fig 16. Maximum Avalanche Energy T/ [1.3BVZth]
Iav = 2
vs. Temperature EAS (AR) = PD (ave)tav
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IRF1407

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T* Low Stray Inductance
Ground Plane
S
Low Leakage Inductance
Current Transformer
-

+
R
T
- +
-

Q
RG dv/dt controlled by RG +
ISD controlled by Duty Factor "D" VDD
-
D.U.T. - Device Under Test
VGS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple 5% [ ISD ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 17. For N-channel HEXFET power MOSFETs

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 IRF1407
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 ( .415 ) 3 .78 (.14 9) -B -
2.87 (.1 13) 10.29 ( .405 ) 3 .54 (.13 9) 4 .69 (.18 5)
2.62 (.1 03) 4 .20 (.16 5)
-A - 1 .32 (.05 2)
1 .22 (.04 8)

6.47 (.2 55 )
6.10 (.2 40 )
4
1 5.24 ( .600 )
1 4.84 ( .584 )
1.1 5 (.04 5) L E A D A S S IG N M E N T S
M IN 1 - GATE
1 2 3 2 - D R A IN
3 - SOU RCE
4 - D R A IN
1 4.09 (.5 55)
1 3.47 (.5 30) 4.0 6 (.160)
3.5 5 (.140)

0.93 ( .037 ) 0.5 5 (.022)

3X 3X
0.69 ( .027 ) 0.4 6 (.018)
1 .40 (.05 5)
3X
1 .15 (.04 5) 0.3 6 ( .014 ) M B A M
2.92 ( .115 )
2.64 ( .104 )
2.54 (.1 00)
2X
N OTES:
1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1 982. 3 O U TLIN E C O N F O R M S TO JE D E C O U TL IN E TO -220 A B .
2 C O N T R O L LIN G D IM E N S IO N : IN C H 4 H E A T S IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU D E B U R R S .

TO-220AB Part Marking Information

EXAMPLE: THIS IS AN IRF1010 PART NUMBER
LOT CODE 1789 INTERNATIONAL
ASSEMBLED ON WW 19, 1997 RECTIFIER
LOGO
IN THE ASSEMBLY LINE "C"
DATE CODE
YEAR 7 = 1997
ASSEMBLY
LOT CODE WEEK 19
LINE C

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/01
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