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Limited by saturated
carrier velocity
I D nqvA
VD
Negative differential
mobility enhances
the dipole domain
formation
-
Ballistic
transport
dominates
Less scattering
events in the
channel
Less inter-valley
transitions in the
channel
Monte Carlo Simulation of a Short-
channel GaAs MESFET (1)
Monte Carlo Simulation of a Short-
channel GaAs MESFET (1)
0 .8 V
E 3.2 x10 4 V/cm Ec 3.5 kV/cm
0.25μm
Intervalle y transiti on should have occured if scattering were significan t.
Monte Carlo Simulation of a Short-
channel GaAs MESFET (2)
Inter-valley electron
transfer does occur, but
not in the channel region
V DS 0.8 V
VGS 0.2 V
fmax
fT