K.H.J. Buschow Ph.D. Ferromagnetic Materials A Handbook On The Properties of Magnetically Ordered Substances

HANDBOOK of MAGNETIC
MATERIALS
VOLUME 14
EDITED BY
K.H.J. BUSCHOW
Van der Waals-Zeeman Institute
University of Amsterdam
Amsterdam
The Netherlands
I
2002
ELSEVIER
Amsterdam - Boston - London - New York - Oxford - Paris
San Diego - San Francisco - Singapore - Sydney - Tokyo
ELSEVIER SCIENCE B.Y.
P.O. Box 211,1000 AE Amsterdam, The Netherlands
© 2002 Elsevier Science B.Y. All rights reserved.
This work is protected under copyright by Elsevier Science. and the following terms and conditions apply to its use:
Photocopying
Single photocopies of single chapters may be made for personal use as allowed by national copyright laws. Permission of the
Publisher and payment of a fee is required for all other photocopying. including multiple or systematic copying, copying for
advenising or promotional purposes. resale. and all forms of document delivery. Special rates are available for educational
institutions that wish to make photocopies for non-profit educational classroom use.
Permissions may be sought directly from Elsevier Science via their home page (http://www.e1sevier.com) by selecting 'Customer
Support' and then 'Permissions'. Alternatively you can send an e-mail to: permissions@elsevier.com. or fax to (+44) 1865
853333.
In the USA. users may clear permissions and make payments through the Copyright Clearance Center. Inc.. 222 Rosewood Drive.
Danvers, MA 01923, USA; phone: (+1) (978) 7508400. fax: (+1) (978) 7504744. and in the UK through the Copyright Licensing
Agency Rapid Clearance Service (CLARCS). 90 Tottenham Coun Road. London WIP OLP, UK; phone: (+44) 207 631 5555;
fax: (+44) 207 631 5500. Other countries may have a local reprographic rights agency for payments.
Derivative Works
Tables of contents may be reproduced for internal circulation. but permission of Elsevier Science is required for external resale
or distribution of such material.
Permission of the Publisher is required for all other derivative works. including compilations and translations.
Electronic Storage or Usage

Permission of the Publisher is required to store or use electronically any material contained in this work. including any chapter or
pan of a chapter.
Except as outlined above. no pan of this work may be reproduced. stored in a retrieval system or transmitted in any form or by
any means. electronic. mechanical. photocopying. recording or otherwise. without prior written permission of the Publisher.
Address permissions requests to: Elsevier Science Global Rights Department, at the fax and e-mail addresses noted above.
Notice
No responsibility is assumed by the Publisher for any injury and/or damage to persons or propeny as a mailer of products liability.
negligence or otherwise, or from any use or operation of any methods. products. instructions or ideas contained in the material
herein. Because of rapid advances in the medical sciences. in particular, independent verification of diagnoses and drug dosages
should be made.
First edition 2002

Library of Congress Cataloging in Publication Data
A catalog record from the Library of Congress has been applied for.
British Library Cataloguing in Publication Data
Handbook of magnetic materials
Vol. 14 edited by K.H.J. Buschow
1. Magnetic materials 2. Magnetism
I. Buschow, K. H. J.
538.4'4
ISBN: 044451144X(VoI.14)
ISBN: 0444 85313 8 (Series)
Working together to grow

libraries in developing countries
www.elsevier.com I www.bookaid.org I www.sabre.org
Transferred to digital printing 2008

PREFACE TO VOLUME 14
The Handbook series Magnetic Materials is a continuation of the Handbook series

Ferromagnetic Materials. When Peter Wohlfarth started the latter series, his original
aim was to combine new developments in magnetism with the achievements of earlier
compilations of monographs, producing a worthy successor to Bozorth's classical and
monumental book Ferromagnetism. This is the main reason that Ferromagnetic Materials
was initially chosen as title for the Handbook series, although the latter aimed at giving a
more complete cross-section of magnetism than Bozorth's book.
In the last few decades magnetism has seen an enormous expansion into a variety of
different areas of research, comprising the magnetism of several classes of novel materials
that share with truly ferromagnetic materials only the presence of magnetic moments. For
this reason the Editor and Publisher of this Handbook series have carefully reconsidered
the title of the Handbook series and changed it into Magnetic Materials. It is with much
pleasure that I can introduce to you now Volume 14 of this Handbook series
Magnetoelectronics is a novel and rapidly developing field, where new functionalities
are created by combining and utilizing simultaneously two degrees of freedom, the
charge and the spin of the carriers. This new field is frequently referred to as spin-
electronics or spintronics. It includes spin-utilizing devices that need neither a magnetic
field nor magnetic materials. In semiconductor devices, the spin of the carriers has only
played a very modest role so far because well established semiconductor devices are
non-magnetic and show only negligible effects of spin. However, interesting enhanced
spin-related phenomena were observed in magnetic semiconductors and diluted magnetic
semiconductors already many years ago. A review of diluted magnetic semiconductors
has been presented by Kossut and Dobrowolski in Volume 7. In a way compatible with
the present-day electronic materials, diluted magnetic semiconductors can be prepared
by introducing high concentrations of magnetic ions into the parent non-magnetic
semiconductors. Semiconductors based on III-V compound are widely used for high-
speed electronic devices as well as for optoelectronic devices. Moreover, heterostructures
based on the GaAs/(Al,Ga)As systems have proven to be a convenient testing ground for
novel physical concepts and devices. The introduction of magnetism into 111-V compounds
therefore, opens up the possibility of using a variety of magnetic and/or spin-dependent
phenomena. not present in the conventional non-magnetic parent compounds. Preparation
and properties of ferromagnetic III-V based semiconductors are reviewed in Chapter 1,
including heterostructures.
Nanoscale thin films and multilayers, nanocrystalline magnetic materials, granular
films, and amorphous alloys have attracted much attention in the last few decades, in
the field of basic research as well as in the broader field of materials science. Such
v
vi PREFACE TO VOLUME 14
heterogeneous materials display uncommon magnetic properties that virtually do not occur
in bulk materials. This is true, in particular with respect to surface (interface) magnetic
anisotropy and surface (interface) magnetostrictive strains and giant magnetoresistance.
The local atomic arrangement at the interface differs strongly from that in the bulk.
The local symmetry is lowered, so that some interactions are changed or are missing
altogether. The interface atoms may be envisaged as forming a new phase and some
properties characteristic of this phase may become predominant for the entire system.
This becomes particularly evident in the case of interfacial magnetostriction which can
lead to a decrease (almost to zero) or to an increase (over the bulk value) of the resulting
magnetostriction of the nanoscale system. In Chapter 2 of the present Volume, the
magnetoelasticity of heterogeneous materials is treated in much details. Generally, the
dimensions of a magnetostrictive material change when the material is subjected to a
change in magnetic field. Hence, magnetostrictive materials can be applied in transducers,
which directly convert electrical energy into mechanical energy. They are useful in the
manufacture of sensors, actuators, controllers, force and displacement as well as other
electro-acoustic devices. For these applications, transducer materials in the form of thin
films are of special interest because cost-effective mass production is possible, compatible
to microsystem processing technologies. In addition, magnetostrictive thin films are
particularly promising as microactuator elements like cantilevers or membranes, since
they combine high-energy output, high-frequency and remote-control operation. Due to
this potential, interest in such giant magnetostrictive thin films has rapidly grown over
the past few years and results are reviewed in this Chapter 2. This chapter is a logical
extension of previous wok on magneto-elastic effects published in this handbook series
over the years. Bulk giant magnetostrictive materials based on rare-earth compounds
were reviewed by Clark (Volume I), quadrupolar interactions and magneto-elastic effects
in rare-earth intermetallics were treated by Morin and Schmitt (Volume 5) and thermal
expansion anomalies and spontaneous magnetostriction of these compounds were reviewed
by Andreev (Volume 8).
There are various forms of the interplay of magnetism and superconductivity, which
can be divided into competition and coexistence phenomena. For instance, a strong
competition is found in high- T e cuprates. In these materials, depending on the doping rate,
either Neel-type antiferromagnetism or superconductivity may occur, both based on the
copper d-electrons. A coexistence of localized magnetic moments (e.g. from 4f-elements)
with superconductivity is known to occur in systems where the concentration of these
moments is sufficiently small or where they are antiferromagnetically ordered and only
weakly coupled to the conduction electrons. A review on the interplay of magnetism
and superconductivity in various types of intermetallic compounds has been presented
by Fischer in Volume 5 of the Handbook. An extensive review on the normal state
magnetic properties of cuprate high-temperature superconductors and related materials
has been presented by Johnston in Volume 10. A striking feature distinguishing the
superconducting RT2B2C compounds from other superconductors is the following: For
certain combinations of the Rand T elements superconductivity and antiferromagnetic
order have been found to coexist and more importantly, the values of the magnetic ordering
temperature TN are comparable in magnitude with the values of the superconducting
transition temperatures T e . This means that the magnetic energy is comparable with the
PREFACE TO VOLUME 14 vii
superconducting condensation energy. Therefore the investigation of these compounds

is expected to result in new insights into the interplay between superconductivity and
magnetism. The high values of T~ demand that in the quaternary borocarbides, different
from the situation in high- T c cuprates and the classical magnetic superconductors, the
exchange coupling between the rare-earth magnetic moments is the dominant magnetic
interaction rather than magnetostatic interaction. Obviously the exchange coupling is
mediated by the conduction electrons, Consequently also the interaction between the
magnetic moments and the conduction electrons must be relatively strong in the quaternary
borocarbides. A comprehensive review on the current status of research of the quaternary
borocarbide superconductors, starting from their discovery, is presented in Chapter 3 of
this Volume. For the reasons mentioned, the magnetic and as well as the superconducting
properties of this interesting class of materials is discussed together.
During the years, intermetallic gadolinium compounds have adopted a special position
in the study of 4f electron magnetism. The reason for this is the fact that the gadolinium
moment consists only of a pure spin moment, orbital contributions to the moment being
absent. As a consequence, gadolinium compounds have been regarded as ideal test
benches for studying exchange interactions, free from complications due to crystal field
effects. Large spontaneous magnetoelastic effects are frequently associated with rare earth
compounds in which crystal fields are operative and in which the rare earth moments also
have an orbital contribution. Surprisingly, equally large spontaneous magnetoelastic effects
have been observed in some Gd compounds, showing that the contribution of the exchange
interaction to spontaneous magnetoelastic effects can become of equal importance as the
crystal field contribution. In several of the Gd compounds so-called magnetostructural
transitions occur where giant spontaneous as well as forced magnetoelastic effects can
be correlated with structural transitions. In Chapter 4 a review is given of experimental
studies of spontaneous magnetoelastic effects in Gd compounds, offering the possibility
to estimate the relative contribution of exchange striction to the total spontaneous
magnetoelastic effects in materials where also crystal field related contributions are
present.
Volume 14 of the Handbook on the Properties of Magnetic Materials, as the preceding
volumes, has a dual purpose. As a textbook it is intended to be of assistance to those
who wish to be introduced to a given topic in the field of magnetism without the need
to read the vast amount of literature published. As a work of reference it is intended for
scientists active in magnetism research. To this dual purpose, Volume 14 of the Handbook
is composed of topical review articles written by leading authorities. In each of these
articles an extensive description is given in graphical as well as in tabular form, much
emphasis being placed on the discussion of the experimental material in the framework of
physics, chemistry and material science.
The task to provide the readership with novel trends and achievements in magnetism
would have been extremely difficult without the professionalism of the North Holland
Physics Division of Elsevier Science B.Y., and I wish to thank Paul Penman for his great
help and expertise.
K.H.J. Buschow
Van der Waals-Zeeman Institute
University of Amsterdam
CONTENTS
Preface to Volume 14 v
Contents ix
Contents of Volumes 1-13 xi
List of Contributors xv
1. III-V Ferromagnetic Semiconductors

F. MATSUKURA, H. OHNO and T. DIETL 1
2. Magnetoelasticity in Nanoscale Heterogeneous Magnetic Materials
N.H. DUC and P.E. BROMMER 89
3. Magnetic and Superconducting Properties of Rare Earth Borocarbides of the
Type RNi 2 B 2 C
K.-H. MULLER, G. FUCHS, S.-L. DRECHSLER and V.N. NAROZHNYI . . . 199
4. Spontaneous Magnetoelastic Effects in Gadolinium Compounds
A. LINDBAUM and M. ROTTER 307
Author Index 363
Subject Index 405
Materials Index 413
ix
CONTENTS OF VOLUMES 1-13
Volume 1
1. Iron, Cobalt and Nickel, by E. P. Wohlfarth 1
2. Dilute Transition Metal Alloys: Spin Glasses, by J. A. Mydosh and G.J. Nieuwenhuys 71
3. Rare Earth Metals and Alloys, by S. Legvold 183
4. Rare Earth Compounds, by K. H. J. Buscfum 297
5. Actinide Elements and Compounds, by W. Trzebiatowski 415
6. Amorphous Ferromagnets. by F E. Luborsky 451
7. Magnetostrictive Rare Earth-Fe^ Compounds, by A. E. Clark 531
Volume 2
1. Ferromagnetic Insulators: Garnets, by M. A. Giileo I
2. Soft Magnetic Metallic Materials. byG.Y.Chin and J. H. Wernick 55
3. Ferrites for Non-Microwave Applications, by P. I. Slick 189
4. Microwave Ferrites, by J. Nicolas 243
5. Crystalline Films for Bubbles, by A.M. Eschenfelder 297
6. Amorphous Films for Bubbles, by A. H. Eschenfelder 345
7. Recording Materials, by G. Bate 381
8. Ferromagnetic Liquids, by S. W. Charles and J. Popplewell . 509
Volume 3
1. Magnetism and Magnetic Materials: Historical Developments and Present Role in Industry
and Technology, by U, Enz I
2. Permanent Magnets; Theory, by H. Zijlstra 37
3. The Structure and Properties of Alnico Permanent Magnet Alloys, by R. A. McCurrie 107
4. Oxide Spinels, by S. Krupitka and P. Novak 189
5. Fundamental Properties of Hexagonal Ferrites with Magnetoplumbite Structure.
byH.Kojima 305
6. Properties of Ferroxplana-Type Hexagonal Ferrites, by M. Sugimota 393
7. Hard Ferrites and Plastoferrites. by H. Stablein 441
8. Sulphospinels. by R. P. van Stapelt 603
9. Transport Properties of Ferromagnets. by I. A. Campbell and A. Fert 747
Volume 4
1. Permanent Magnet Materials Based on 3d-rich Ternary Compounds, by K. H. J. Buschaw . . . . 1
2. Rare Earth-Cobalt Permanent Magnets, by A J. Srrnai . 131
3. Ferromagnetic Transition Metal Intermeiallic Compounds, by J. G. Booth 211
XI
xii CONTENTS O F VOLUMES 1-13
4. Intermetallic Compounds of Actmides. by V. Sechmsky and L Havela 309

5. Magneto-Optical Properties of Alloys and Intermetallic Compounds, by K. H. J. Buschow . . . 493
Volume 5
1. Quadrupolar Interactions and Magneto-Elastic Effects in Rare-Earth Intermetallic Compounds.
by P Morin and D. Schmitt I
2. Magneto-Optical Spectroscopy of f-Electron Systems, by W. Reim and J. Schitenes 133
3. INVAR: Moment-Volume Instabilities in Transition Metals and Alloys, by E.F. Wassermtm . . . 237
4. Strongly Enhanced Itinerant Intermelallics and Alloys, by P. E. Bmmmerand J.J. M. Franse . . . 323
5. First-Order Magnetic Processes, by C Asti 397
6. Magnetic Superconductors, by 0. Fischer 465
Volume 6
1. Magnetic Properties of Ternary Rare-Earth TransUion-Metal Compounds, by H.-S. Li and
J.M.D.Coey 1
2. Magnetic Properties of Ternary Intermetallic Rare-Earth Compounds, by A. Szylula 85
3. Compounds of Transition Elements with Nonmetals. by O. Bechnan and L. Lundgren 181
4. Magnetic Amorphous Alloys, by P. Hansen 289
5. Magnetism and Ouasicrystals. byR. C. O'Hundley. R.A. Dunlap andM. E McHenry 453
6. Magnetism of Hydrides, by G. Wiesinger and G. Hilscher 511
Volume 7
1. Magnetism in Ultrathin Transition Metal Films, by II. Gradmann 1
2. Energy Band Theory of Metallic Magnetism in the Elements, by V.L Moruzzi and
P.M.Man-us 97
3. Density Functional Theory of the Ground State Magnetic Properties of Rare Earths and Actinides.
by M. S. S. BrtH>ks and B. Johansson 139
4. Diluted Magnetic Semiconductors, by J. Kossut and W. Dobrmvolski 231
5. Magnetic Properties of Binary Rare-Earth 3d-Transition-Metal Intermetallic Compounds,
by J.J. M. Franse and R.J'. Radv.an.ski 307
6. Neutron Scattering on Heavy Fermion and Valence Fluctuation 4f-systems.
by M. Ldoewenhaupl and K. H. Fischer 503
Volume 8
1. Magnetism in Artificial Metallic Superlattices of Rare Earth Metals, by J.J. Rhyne and
R. W. En* in 1
2. Thermal Expansion Anomalies and Spontaneous Magnetostriction in Rare-Earth Intermetallics
with Cobalt and Iron, by A. V. Andreev 59
3. Progress in Spinel Ferrite Research, hy V. A. M. Brabers 189
4. Anisotropy in Iron-Based Soft Magnetic Materials, by M. Soinski and A. J. Moses 325
5. Magnetic Properties of Rare Earth-Cui Compounds, hy Nguyen Hoang Luang and
J.J.M. Franse 415
Volume 9
1. Heavy Fermions and Related Compounds, hy G.J. Nieuwenliuys 1
2. Magnetic Materials Studied by Muon Spin Rotation Spectroscopy, hy A. Schenck and F.N. Gygax 57
CONTENTS OF VOL UMES 1-43 xiii
3. Interstitially Modified Intermetallics of Rare Earth and 3d Elements, by H. Fujii and H. Sun . . . .¾).¾
4. Field Induced Phase Transitions in Ferrimagnels. by A. K. Zvezdin 4()5
5. Photon Beam Studies of Magnetic Materials, by S. W. Lmesey 545
Volume 10
1. Normal-State Magnetic Properties of Single-Layer Cuprate High-Temperature Superconductors and
Related Materials, by D.C. Johnston 1
2. Magnetism of Compounds of Rare Earths with Non-Magnetic Metals, by D. Gignoux and D. Schmitt 239
3. Nanocrystalline Soft Magnetic Alloys, by G. Herzer 415
4. Magnetism and Processing of Permanent Magnet Materials, by K.H.J. Buschow 463
Volume 11
1. Magnetism of Ternary Intermetallic Compounds of Uranium, by V. Sechovsky and L. Have la . . 1
2. Magnetic Recording Hard Disk Thin Film Media. byJ.C. Ladder 291
3. Magnetism of Permanent Magnet Materials and Related Compounds as Studied by NMR.
by Cz. Kapu.ua. PC. Riedi and G.J. Tomka 407
4. Crystal Field Effects in Intermetallic Compounds Studied by Inelastic Neutron Scattering, by O. Maze 493
Volume 12
1. Giant Magnetoresistance in Magnetic Multilayers, by A. Barthe'lemy, A. Fertand F. Petrvff . . . I
2. NMR of Thin Magneiic Films and Superlattices. by P.C. Riedi. T. Thomson and G.J. Tomka . . . 97
3. Formation of 3d-Moinents and Spin Fluctuations in Some Rare-Earth-Cobalt Compounds.
by N.H. Due and P.E. Brtmmer 259
4. Magnetocaloric Effect in the Vicinity of Phase Transitions, by A.M. Ttshin 395
Volume 13
1. Interlayer Exchange Coupling in Layered Magnetic Structures, by D.E. Biirgler.
P. Grtinberg, S.O. Demokritpx-andM.T. Johnson 1
2. Density Functional Theory Applied to 4f and 5f Elements and Metallic Compounds, by M. Richter 87
3. Magneto-Optical Kerr Spectra, by P.M. Oppeneer 229
4. Geometrical Frustration, by A. P. Ramirez 423
Material chroniony prawem autorskim

LIST OF CONTRIBUTORS
P.E. Brommer, Van der Waals-Zeeman Instituut, Universiteit van Amsterdam, Valckenier-
straat 65, 1018 XE Amsterdam, The Netherlands
T. Dietl, Research Institute of Electrical Communication, Tohoku University, Sendai, Japan
S.-L. Drechsler, Leibniz-Institut filr Festkorper- und Werkstofforschung Dresden, P.O. Box
270116, D-O1171, Dresden, Germany
N.H. Due. Cryogenic Laboratory, Faculty of Physics. National University of Hanoi,
334 Nguyen Trai, Thanh xuan, Hanoi, Vietnam
G. Fuchs. Leibniz-Institut fur Festkorper- und Werkstofforschung Dresden, P.O. Box
A. Lindbaum, Institut fur Festkorperphysik, Technische Universitat Wien, Wiedner
Hauptstrasse 8-10/138, A-I040 Wien, Austria
F. Matsukura, Laboratory for Electronic Intelligent Systems, Research Institute of
Electrical Communication, Tohoku University, Sendai, Japan
K.-H. Muller, Leibniz-Institut fur Festkorper- und Werkstofforschung Dresden, P.O. Box
V.N. Narozhnyi, Leibniz-Institut fUr Festkorper- und Werkstofforschung Dresden, P.O. Box
H. Ohno, Laboratory for Electronic Intelligent Systems, Research Institute of Electrical
Communication, Tohoku University, Sendai, Japan
M. Rotter, Institut fur Angewandte Physik, Technische Universitlit Dresden, D-01062,
Dresden, Germany
chapter 1
III-V FERROMAGNETIC SEMICONDUCTORS
F. MATSUKURA
Laboratory for Electronic Intelligent Systems
Research Institute of Electrical Communication, Tohoku University
Sendai
Japan
H.OHNO
Laboratory for Electronic Intelligent Systems
Research Institute of Electrical Communication, Tohoku University
Sendai
Japan
T. DIETL
Institute of Physics, Polish Academy of Sciences

Warszawa
Poland
Handbook of Magnetic Materials, Vol. 14

Edited by K.H.J. Buschow
© 2002 Elsevier Science B.V. All rights reserved
CONTENTS
I. Introduction .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2. Preparation of III-V magnetic semiconductors by molecular beam epitaxy 6
2.1. (Ga,Mn)As . 6
2.2. (In,Mn)As grown on GaAs 10
2.3. (In,Mn)As grown on (AI,Ga)Sb II
2.4. Other Ill-V magnetic semiconductors . 12
3. Lattice properties . 15
3.1. Lattice constants . . . . . . . . . . . 15
3.2. Local lattice configuration (EXAFS) 17
3.3. Atomic-scale observations by scanning tunneling microscopy (STM) 18
4. Spin and charge states of Mn in III-V magnetic semiconductors. 18
4.1. Electron spin resonance (ESR) . 19
4.2. Optical spectroscopy . . . . . . . . 19
4.3. X-ray magnetic circular dichroism (XMCD) 20
4.4. Photoemission 21
5. Magnetic properties . 21
5.1. Magnetization. 21
5.2. Magnetic anisotropy 24
5.3. Magnetic domains . 26
5.4. Cantilever magnetometry 26
6. Magnetotransport properties 27
6.1. (Ga,Mn)As 27
6.2. (In,Mn)As . 34
6.3. Infrared and far infrared optical conductivity . 37
6.4. Cyclotron resonance 37
7. Magneto-optical properties 38
7.1. Faraday rotation .. 39
7.2. Magnetic circular dichroism (MCD) 40
8. Origin of ferromagnetism . 41
8.1. First-principles studies . 41
8.2. Parameterized Hamiltonians . . 45
8.3. Hole states and hole mediated exchange interactions 47
8.4. Mean-field Zener model and its application to (Ga,Mn)As 50
8.5. Comparison of theoretical and experimental results 55
2
III-V FERROMAGNETIC SEMICONDUCTORS 3
8.6. Limitations and refinements of the mean-field Zener model .. 59

9. Heterostructures . . . . . . . . . . . . . . 61
9.1. Basic properties of heterostructures 61
9.2. Spin-dependent scattering. interlayer coupling. and tunnel magnetoresistance in trilayer structures 64
9.3. Resonant tunneling diodes (RTDs) .. . . . . . . . . . . . . . . . 67
9.4. Spin-injection in ferromagnetic semiconductor heterostructures 70
9.5. Photo-induced ferromagnetism in (In.Mn)AslGaSb . . . . . 72
9.6. Electric-field control of ferromagnetism in gated structures . 73
9.7. Ferromagnetic imprinting .. . . . . . . . . . 75
10. Ferromagnetic semiconductors at room temperature 75
10.1. Theoretical suggestions 75
10.2. Cautionary remarks. 77
10.3. Experimental results 77
11. Summary and outlook . 79
Acknowledgements . 79
References 79
1. Introduction
Modem information technology utilizes the charge degree of freedom of electrons in semi-
conductors to process the information and the spin degree of freedom in magnetic mate-
rials to store the information. Magnetoelectronics is a new fastly developing field, where
the two degrees of freedom, the charge and the spin of the carriers, are utilized simul-
taneously to create new functionalities. In more general terms, this new field is referred
to as spin-electronics or spintronics to include those spin-utilizing devices that need nei-
ther the magnetic field nor magnetic materials. The magnetoresistance (MR) sensors made
of multilayers containing metal ferromagnets, showing giant magnetoresistance (GMR)
or tunneling magnetoresistance (TMR), are today's best known successful magnetoeloec-
tronics devices based on the interplay between the two degrees of freedom (Prinz 1998;
De Boeck and Borghs 1999; Wolf 2000; Ball 2000; Ziese and Thornton 200 I; Wolf et al.
2001).
In semiconductor devices, the spin of carriers has played a minor role so far because
the most-well established semiconductor devices based on Si and GaAs are non-magnetic
and show only negligible effects of spin. On the other hand, from the physical points
of view, the enhanced spin-related phenomena due to the coexistence of the magnetism
and semiconductor properties have been recognized in magnetic semiconductors and
diluted magnetic semiconductors (DMS) (or semimagnetic semiconductors; SMSC) since
the 60s. The family of magnetic semiconductors encompasses europium and chromium
chalcogenides (rock-salt type: EuSe, EuO and spinels: CdCr2S4, CdCr2Se4), which show
ferromagnetic order at low temperatures with the Curie temperature Tc :::; 100 K. They
have been extensively studied, because of their peculiar properties resulting from the
exchange interaction between itinerant electrons and localized magnetic spins (s-f and s-d
exchange interactions) (Kasuya and Yanase 1968; Methfessel and Mattis 1968; Mauger and
Gotard 1986). Owing to these interactions, magnetic semiconductors exhibit a rich variety
of striking optical and transport phenomena, which are strongly affected by the magnetic
field and the magnetic order, particularly near the metal-to-insulator transition (MIT).
However, difficulties in material preparation and in fabrication of heterostructures make
this family of compounds less attractive from the application point of view. Manganites
(perovskite: (La,Sr)Mn03 and related materials), which show colossal magnetoresistance
(CMR), are magnetic semiconductors, whose studies have been particularly active over the
recent years. Their ferromagnetic order, beginning at "" 350 K, originates from the double-
exchange interaction. Properties of manganites and their epitaxial heterostructures are
currently studied aggressively (Coey et al. 1999; Tokura and Tomioka 1999; Tokura 2000).
Their compatibility to the well-established electronic devices is an open issue because of
the differences in both crystal structure and constituting elements.
4
DMS are based on non-magnetic semiconductors, and are obtained by alloying them
with a sizable amount (a few percents or more) of magnetic elements, such as Mn. The
studies of DMS and their heterostructures have offered a wide variety of materials and
structures, making it possible to explore further the effect of the exchange interaction in
semiconductors. Most of the work had been centered around II-VI based materials such as
(Cd,Mn)Te, (Zn,Co)S, (Hg,Fe)Se, where the valence of group II cations is identical to that
of most magnetic transition metals (Furdyna and Kossut 1988; Kossut and Dobrowolski
1993; Dietl 1994). Although this made them relatively easy to prepare, difficulties in
doping of II-VI-based DMS to either p- or n-type as well as relatively weak bonds made
these materials less attractive for applications. The magnetic properties of II-VI DMS
are dominated by the antiferromagnetic super-exchange interactions among the localized
spins, which result in paramagnetic, spinglass or antiferromagnetic behavior depending on
the concentration of the magnetic ions and temperature. Recent progress in doping of II-VI
materials is gradually changing this situation (Shibata et at. 1988; Baron et at. 1994), for
example, hole mediated ferromagnetism was found in p-type II-VI DMS with Tc < 10 K
(Haury et at. 1997; Ferrand et at. 2001; Hansen et a1. 200 1). Understanding of the carrier-
mediated ferromagnetism in semiconductors was put forward by a study of ferromagnetism
in IV-VI DMS such as (Pb.Sn.Mnj'Ie (Story et al. 1986). However, IV-VI DMS and their
heterostructures are again rather difficult to prepare.
An approach compatible with the present-day electronic materials is to make non-
magnetic semiconductors magnetic, and even ferromagnetic, by introducing a high
concentration of magnetic ions. III-V compound semiconductors are widely used for high-
speed electronic devices as well as for optoelectronic devices. Moreover, heterostructures
based on the GaAs/(Al,Ga)As systems have proven to be a convenient test bench for new
physics and device concepts. Introduction of magnetic III-V compounds opens, therefore,
up the possibility of using a variety of magnetic and/or spin-dependent phenomena, not
present in the conventional non-magnetic III-Vs, in the optical and electrical devices
already established (fig. 1). The proposal of III-V based magnetic semiconductors with
various sets of host materials and transition metals was put forward in 1970s (Galazka
1977), and some experimental studies were then initiated. At that time, however, III-V
materials with a sizable concentration of uniformly distributed magnetic elements were
not obtained due to the low solubility of transition metals in III-V semiconductors (Aliyev
et a1. 1980). The application of non-equilibrium methods to grow III-V-based DMS was
rewarded by successful molecular beam epitaxy (MBE) of uniform (In,Mn)As films
on GaAs substrates (Munekata et at. 1989). Subsequent discovery of the hole-induced
ferromagnetic order in p-type (In,Mn)As (Ohno et a1. 1992) encouraged researchers to
investigate GaAs-based system (De Boeck et at. 1996) and led to the successful growth of
ferromagnetic (Ga,Mn)As (Ohno et a1. 1996a). Currently, a number of groups is working on
the MBE growth of (Ga,Mn)As and related heterostructures to advance the understanding
of this new class of materials (Ohno et a1. 1996a; Ohno 1999; Hayashi et a1. 1997a;
Nishikawa et a1. 1997; Van Esch et a1. 1997; Sadowski et at. 1998; Kawakami et at. 2000;
Potashnik et a1. 200 1; Schott et a1. 200 1; Liu et a1. 200 1).
This chapter reviews the properties of ferromagnetic III-Vs, and is organized in the
following way. Section 2 describes the preparation of ferromagnetic III-Vs, and is followed
by the presentation of lattice properties in section 3. In section 4, spin and charge states of
6 F. MATSUKURA et aI.
Fig. I. Concept of spin-electronics (spintronics). In semiconductor spin-electronics spin properties as well as

electronic and optical properties are utilized at the same time.
magnetic ions in III-V DMS are discussed. The magnetic and magnetotransport properties
are presented in sections 5 and 6. respectively. Section 7 summarizes optical and magneto-
optical properties. Possible origin of ferromagnetism in III-V-based DMS is discussed in
section 8. Properties of heterostructures are presented in section 9 and recent developments
of room-temperature ferromagnetic semiconductors are introduced in section 10. Summary
and outlook is given in section II.
2. Preparation of 111-V magnetic semiconductors by molecular beam epitaxy
In order to observe magnetic cooperative phenomena in diluted magnetic systems. one

needs to introduce a sizable amount of magnetic elements (a few percents or more).
which is beyond their solubility limit in III-V semiconductors. Although non-equilibrium
epitaxial growth methods such as molecular beam epitaxy (MBE) could offer doping
in excess of the thermodynamic solubility limit. segregation of impurities during MBE
growth was an obstacle in obtaining high concentrations of magnetic elements (DeSimone
1982). It was demonstrated that low temperature MBE (LT-MBE. growth temperature
Ts < 300°C) can lead to successful epitaxy of (In.Mn)As with a few percents of Mn,
in which the solubility limit is overcome as well as the segregation phenomena. and the
formation of unwanted second phases is suppressed (Munekata et al. 1989). InAs was
chosen as a host compound because it was thought to be a suitable material for low
temperature growth due to its relatively small bond energy.
2.1. (Ga,Mn)As
Typical MBE growth of (Ga,Mn)As is carried out by using solid source MBE with
elemental sources Ga. Mn, In. Al and As, usually without intentional doping. Mn provides
both localized spins and holes due to its acceptor nature. Epitaxial films of (Ga.Mn)As
are grown on semi-insulating GaAs (00 I) substrates at a typical growth rate of 0.6-
0.8 JLmlhour under As-stabilized conditions. Normally. either a GaAs buffer layer or an
III-V FERROMAGNETIC SEMICONDUcrORS 7
(Al,Ga)As buffer layer is grown before epitaxy of (Ga,Mn)As. To control strain in the
film, strain-relaxed thick (In,Ga)As ('" 1 jlm) with the lattice constant Q o greater than the
subsequent (Ga,Mn)As layer can be employed. The Mn composition x in the Ga I-x Mn, As
films can be determined from measurements of Q o by x-ray diffraction (XRD), once the
dependence Qo(x)is calibrated by other means, such as electron probe micro-analysis
(EPMA) or secondary ion mass spectroscopy (SIMS).
The growth of (Ga,Mn)As can be initiated by simply commencing the Mn flow during
the LT-GaAs growth and keeping the substrate temperature Ts constant at 250°C. No
special precautions are needed at the start of (Ga,Mn)As growth. However, properties of
(Ga,Mn)As films do depend on the growth parameters such as As overpressure and Ts
(Matsukura et al. 1998a; Shimizu et al. 1999; Schott et al. 200 1). This may stem from the
influence of these parameters on the degree of compensation of the Mn acceptors by deep
donors, primarily As antisites which are known to be present with a high concentration in
LT-GaAs (Look 1991; Luysberg et al. 1998). However, as long as the established growth
procedure is followed, the properties of (Ga,Mn)As films are reproducible; for example,
for a given Mn composition x, the ferromagnetic transition temperature Tc can always be
maintained in the range of 2000x ± 10 K (Matsukura et al. 1998b).
Reflection high-energy electron diffraction (RHEED) patterns are used to monitor
the surface reconstruction during the growth. RHEED of GaAs [or (AI,Ga)As] buffer
layer grown at Ts '" 570°C shows the well-known (2 x 4) pattern, which changes to the
c(4x4) pattern when Ts is lowered to 48D-520°C, and remains c(4x4) below. Whereas
the RHEED pattern of GaAs layers grown at Ts = 250°C shows a (I x I) pattern (no
reconstruction) (fig. 2a), that of (Ga,Mn)As is (I x2) during and after the growth (fig. 2b).
The origin of this difference is not yet clear. When the Mn flux and/or Ts are too high, the
RHEED pattern indicates the appearance of a second phase on the surface, which is MnAs
in the hexagonal NiAs-structure (fig. 2d). When Ts is too low, spotty RHEED pattern
appears showing that the growth mode changes from the two-dimensional (2D) to three-
dimensional (3D), resulting in a polycrystalline material (fig. 2c). The maximum value
of x obtained so far is about 0.07 at 250°C, and increases up to '" 0.10 at Ts = 200°C
(Takamura et al. 200 1). Attempts to increase x even further have so far been unsuccessful
because of the surface segregation that occurs even at low growth temperatures. At a fixed
value of x = 0.035, epitaxial (Ga,Mn)As films can be grown at Ts varying from 160 to
320°C (Shen et al. 1997a).
Clear RHEED oscillations are observed at the initial growth stage (also without
Mn) under the conditions appropriate for (Ga,Mn)As epitaxy. Thus, the growth is two-
dimensional, and its rate can be determined from the oscillation period (fig. 3) (Shen et al.
1997a, 1997b). Monte Carlo simulations of RHEED oscillations have been carried out
for LT-GaAs employing the cubic solid-on-solid model (Yasuda and Ohno 1999). The
results show that the RHEED oscillations are related to an enhancement in migration of Ga
adatoms caused by a surfactant effect of the excess As overlayer. The surfactant effect of
As is demonstrated also by the surface visualization (Guo et al. 2000; Tazima et al. 2001a).
Scanning tunneling microscopy (STM) study of LT-GaAs shows that the step density on
the surface increases monotonically with the decrease of Ts, indicating the monotonous
decrease of Ga migration length. This result suggests that the origin of RHEED oscillation
may also relate to the decrease of the Schwoebel barrier height due to the formation of
8 F. MATSUKURA et a1.
Fig. 2. Reflection high energy electron diffraction (RHEED) patterns taken from [110] azimuth. (a)
Low-temperature grown GaAs at 250o e. (b) (Ga,Mn)As at 250 o e. (c) 170o e. and (d) 320 0 e (Shen et a1. I997a).
tshu er openingGaAs
T=600°C
t
~ GaAs
~ ~500C
W
I-
Z (Ga,Mn)As
T=250°C
s
2s
......
TIME-
Fig. 3. Temporal evolution of RHEED specular beam intensity (along [110] azimuth) for GaAs at 6OOo e. GaAs
at 250o e. and (Ga.Mn)As at 250 0 e from top to bottom (Shen et at. I997a).
.... .
..... .....
.
Growth inhibited,
.
..... ..... formation of MnAs
300 ~\ ..... ..... •
\ .....
.....
--
p
\
\ Metallic (Ga,Mn)As
,-
.....
..... ~
. ...CIl
\
, /
I
200 ~ , /Insulating·
......... _ .... ", (Ga,Mn)As
Roughening
Polycrystal
100 "'--_......_-"""'--_......._ _... . .
0.00 0.02 0.04 0.06 0.08
Mn composition x in Ga 1_xMnxAs
Fig. 4. Schematic diagram of properties of {Ga,Mn)As films in relation to the growth parameters. Lines provide
a rough guide (Ohno 1998; Shen et aI. 1999).
small growth islands (Tazima et al. 200 Ib). The enhancement of the RHEED oscillation
of (Ga,Mn)As is observed, when the lattice-relaxed (In,Ga)As is used as a buffer layer
(Matsukura 1997) or (Ga,Mn)As contains a few percents of In (Katsumoto 1999). In these
cases, it is considered that In atoms act as additional surfactant.
A schematic phase diagram of MBE growth is depicted in fig. 4 (Ohno 1998; Shen et al.
1999). Recently it was shown that metallic (Ga,Mn)As with x = 0.1 can be obtained by
the use of a modified MBE growth technique at Ts = 150°C, migration-enhanced epitaxy
(MEE), where the beam fluxes of source materials are precisely controlled (Sadowski et al.
zoois.zoouo.
The surface morphology investigated by atomic-force microscopy (AFM) shows that
(Ga,Mn)As with 2D growth mode has a flat surface being comparable with a GaAs surface
[root-mean-square (RMS) of the roughness < 0.5 nm]. On the other hand, (Ga,Mn)As with
segregated RHEED pattern has a rather rough surface, characterized by about 10 times
larger RMS, which is probably due to small MnAs clusters (Yang et al. 2000).
The homogeneity of as-grown (Ga,Mn)As and the precipitation of MnAs clusters after
annealing at around 600°C are confirmed by transmission electron microscopy (TEM)
(De Boeck et al. 1996). The disappearance of the (Ga,Mn)As phase by annealing at
temperatures above 400°C is also confirmed by the disappearance of x-ray diffraction
peaks of (Ga,Mn)As (Shen et a1. 1997a). Low-temperature annealing at '" 300°C changes
lattice constant, magnetic, and electrical properties of (Ga,Mn)As, which is thought to
result from the evaporation of excess As atoms that form complexes with Mn acceptors
(Hayashi et a1. 200 I; Potashnik et al, 200 I). By additional doping of high concentration of
Sn, n-type (Ga,Mn)As can be also grown (Satoh et a1. 1997,2001).
10 F. MATSUKURA er aI.
It has been shown that digital alloys. multilayer structures consisting of GaAs and
less-than 1 monolayer (ML)-thick MnAs. which exhibit the ferromagnetic order at low
temperatures. can be grown by atomic-layer epitaxy (ALE) (Chen et al. 2000; Kawakami
et al, 2(00). The growth of (Ga.Mn)As with nominal Mn composition up to 0.04 by
metal-organic vapor-phase epitaxy (MOVPE) has also been carried out. MOVPE-grown
(Ga.Mn)As includes MnAs microclusters due to the high-growth temperature of 400-
600°C. which is necessary for the decomposing of precursor compounds (Hartmann
et a1. 2000; Heimbrodt et a1. 2001). MBE growth of (Ga.Mnjas on GaAs (41l)A and
Si (00l) substrates and (In.Ga.MnjAs on InP (001) substrates and the observation of their
ferromagnetism also have been carried out (Omiya et al. 200 1; Zhao et al. 2002; Ohya et a1.
200 I; Siupinski et al. 2002a).
2.2. (In.Mn)As grown on GaAs

The overall trend in the properties of (In.Mn)As grown by MBE can be summarized in
terms of x and Ts (Munekata et al. 1989. 1990. 1991; Ohno et a1. 1991). When (In.Mn)As
layers are grown directly on the GaAs substrate. either Il'- or p-type conduction is observed
depending on x and Ts. At Ts of 200°C. thick (In.Mn)As layers (> I JLm) grown on
GaAs (00l) substrates are n-type. The anomalous Hall effect. which is proportional to the
perpendicular component of the magnetization of the film. has not been observed in n-type
films. Donor-type defect formation in the InAs host lattice at growth temperature is most
probably responsible for the n-type conduction in such (In.Mn)As layers. Defect formation
may also be enhanced by the high density of mismatch dislocations in the (In.Mn)As
layers; the lattice mismatch in question is about 7%. When Ts < 200°C. polycrystalline
growth occurs.
At higher Ts of 400°C. the layers are p-type at low x « 0.03). MnAs ferromagnetic
clusters start to form above x = 0.03. and the films become eventually n-type at high
x values of 0.18. The hole concentration is identical to the Mn concentration up to
x = 0.004 (p = 7 X 10 19 cm'). at which the hole concentration peaks and then rolls off
with the increase of x. Thus. in the low x region of thick p-type layers grown at 300°C. Mn
behaves as a shallow acceptor. At x = 0.026 the hole concentration is 3 x 10 18 cm >'. No
epitaxy is observed at Ts > 400°C. The phase diagram showing the relation between film
properties and growth parameters is shown in fig. 5 (Ohno et al. 1991). Low-temperature
annealing of (In.Mn)As results in an increase of p and Te. similar to (Ga.Mnj.As (Endo
et al, 2001; Hashimoto et al. 2002).
The homogeneity of (In.Mn)As films grown at '" 200°C and the existence of MnAs
clusters in the samples grown at '" 300°C are confirmed by TEM observation. The
annealing at 450°C modifies the size of the clusters (Guha and Munekata 1993; Van Esch
et a1. 1995).
InAs quantum dots (QDs) fabricated by the self-organized growth mode (Stranki-
Krastanov mode) have attracted a great deal of interest. The interplay between dimensional
confinement and magnetism is certainly an interesting topic to pursue. The formation of
self-organized (In.Mnjas dots was demonstrated by growing (In.Mn)As on (00l), (211)B.
(311)B GaAs substrates by MBE at Ts = 350°C (Guo et al. 1998, 1999). In order to obtain
uniform structures. the growth temperature should be kept as high as possible. close to the
point of the phase separation. Photoluminescence from (In.MmAs QDs has been observed
(Sadowski et al. 200lc).
( (
400 Growth Inhibited
p-lnMnAs p-lnMnAs+MnAs
6300- .
'?..-
CIl
t- x-O.03
200
n-lnMnAs (x s 0.24) .
Polycrystal
l\ I
100 ' - - - - - - - - - - - - , 'r--~
0.00 IJ 0.25
Mn composition x in In,."Mn"As
Fig. 5. Schematic diagram of properties of (In,Mn)As films grown directly on GaAs (001) substrate in relation
to the growth parameters (Ohno et al. 1991).
2.3. (In,Mn)As grown on (Al,Ga)Sb

Contrary to the results of thick layers directly grown on GaAs substrate, thin (In,Mn)As
layers « 30 nm) grown at 200°C pseudomorphically on thick (Al,Ga)Sb buffer layers
(200-500 nm grown on (001) GaAs substrates) are p-type (Ohno et al. 1992; Munekata
et al. 1992). A schematic phase diagram of thin (In,Mn)As layers on (Al,Ga)Sb buffer
layer is shown in fig. 6 (Munekata 1995). The p-type conduction results, most probably,
from the acceptor nature of Mn and low dislocation density in the pseudomorphic thin
layers. Although the lattice mismatch between the (In,Mn)As layers and the (AI,Ga)Sb
buffer layers is small, depending on the growth procedure different initial growth modes
have been observed (Shen et al. 1997c). Careful minimization of As flux is required to
obtain 2D growth at the initial stage of (In,Mn)As epitaxy (x = 0.02-0.04) on (Al,Ga)Sb,
otherwise 3D growth takes place, as witnessed by RHEED patterns. It is interesting to note
that despite streaky RHEED patterns that appear after 10-20 nm growth of (In,Mn)As,
the magnetic properties, probed by the anomalous Hall effect, show a correlation with
the initial growth mode. In particular, the 3D nucleation results in superparamagnetism,
whereas the 2D nucleation leads to ferromagnetism with square hysteresis (Shen et al.
1997c). The tensile strain associated with the lattice mismatch between (In,Mn)As and
(Al,Ga)Sb (0.6-1.3%) makes the easy axis to be perpendicular to the film plane (Munekata
et al. 1993). The increase of the thickness beyond the critical value (about 55 nm
for (In,Mn)As/AlSb) causes lattice relaxation, which affects magnetic anisotropy. The
thickness of the (In,Al)As spacer layer (AI composition r - 0.15) between (In,Mn)As layer
and AISb buffer also influences the magnetic properties of (In,Mn)As (Munekata et al.
1992).
12 F. MATSUKURA et al.
.
300 ,
x= x .
I
I
C
p-lnMnAs + MnAs
\
.. - - - - - - - -T=TC
p-lnMnAs on (AI,Ga)Sb I GaAs(001
200 ~
. .
0.0 0.1 0.2
Mn composition x in In 1•xMn xAs
Fig. 6. Schematic diagram of properties of (In,Mn)As films grown on GaAs substrate with thick (AI,Ga)Sb buffer
layer between the two in relation to the growth parameters (Munekata 1995).
2.4. Other III-V magnetic semiconductors

With the advances of the non-equilibrium crystal growth techniques, other III-V magnetic
semiconductors than (Ga,Mn)As and (In,Mn)As with different host semiconductors and
different transition metals have appeared and the investigation of properties of these new
materials are underway.
• (Ga,Fe)As: The growth of (Ga,Fe)As with Fe compositions up to ~ 0.1 was carried out
by LT-MBE at Ts = 260-350°C on GaAs substrate (Haneda et al. 2000a). The lattice
constant of (Ga,Fe)As becomes smaller with the increase of Fe composition, reflecting
the shorter bond length of Fe-As than that of Ga-As. The elevation of Ts leads to
the precipitation of Fe-related clusters. The extended x-ray absorption fine structure
(EXAFS) analysis revealed that Fe atoms in (Ga,Fe)As grown at low Ts substitute
into Ga sites in the zinc-blende structure. whereas that Fe atoms in high- Ts grown
samples form Fe clusters and/or Fe-As complexes (Soo et al. 200la). Van-Vleck type
paramagnetism occurs in (Ga.FefAs, as the temperature dependence of magnetization is
rather weak at low temperatures « 10 K). The conduction type is n-type and a photo-
induced MR effect is observed below 100 K. In GaAs-Fe composite structures (GaAs
including Fe clusters), photo-induced magnetization as well as MR effect is observed
even at room temperature (Haneda et al. 2000b, 200 I), The properties of (Ga.Fe.Mnj.As
with transition metal compositions up to 0.04 have been investigated. The results show
that (Ga,Fe,Mn)As becomes insulating with the increase of Fe content, and that there are
contributions of ferromagnetic and paramagnetic terms to the film magnetization. The
ratio of paramagnetic part to ferromagnetic part increases with the increase of Fe content
(Moriya et al. 2002).
• (Ga,Cr)As: (Ga,Cr)As layers with Cr compositions up to 0.1 were grown by LT-MBE at

Ts = 250°C on GaAs substrates (Saito et al. 2001). The magnetization measurements
show that (Ga.CrjAs is superparamagnetic and the Curie-Weiss plot has a positive
Curie temperature, indicating that the dominant interactions between the Cr ions are
ferromagnetic. The value of the effective magnetic moment of the Cr ions is consistent
with that of the divalence state of Cr, suggesting that the Cr atoms act as acceptors.
Whereas there is a report of p-type conduction of (Ga,Cr)As (Okazawa et al. 1999,
2001), the determination of the conduction type by Hall measurements is rather difficult
due to a small Hall voltage, suggesting that the conduction is dominated by hopping.
Ferromagnetism below r - 45 K of (Ga,Cr)As with higher Cr composition (0.14) is also
observed. From photoemission spectroscopy, (Ga,Cr)As with Cr compositions larger
than 0.25 is metallic (Yamada et al. 2(01). Ferromagnetic properties of (Ga,Cr,Mn)As
grown by MBE are reported (Akinaga et al. 2000a). However, Tc is lower than that
of (Ga,Mn)As with the same Mn composition, which may be due to the compensation
effect.
• (Ga,Mn)N: bulk crystals with x up to 0.02 were grown by a resublimation method
(Gebicki et al. 2(00), and microcrystals with x up to 0.005 were obtained by an
ammonthermal method (Zajac et al. 200 Ia). Both compounds show extra Raman peaks
induced by disorder stemming from Mn incorporation. Magnetization measurements
reveal that these compounds are paramagnetic and from its temperature dependence
antiferromagnetic nearest-neighbor interaction coupling v- -2 K) is obtained (Zajac
et al. 200lb).
Structural properties of MBE-grown (Ga,Mn)N with x up to 0.09 on AIN buffer onto
Ah03 substrate grown at Ts = 650-750°C by MBE using RF-nitrogen plasma source
have been investigated (Kuwabara et al. 200 Ia, 200 Ib). Both cross-sectional TEM and
plane-view scanning electron microscopy (SEM) images show no visible second phase.
Extended x-ray absorption fine structure (EXAFS) analysis indicates that the Mn atoms
are incorporated in the Ga sites. Magnetization measurement revealed that there exist
contributions from both ferromagnetic (even at room temperature) and paramagnetic
phases. Kuwabara et al. suppose that the ferromagnetic part may originate from the
presence of ferromagnetic or ferrimagnetic second phases of Ga-Mn and/or Mn-N, since
the samples are highly resistive and thus no carrier-induced ferromagnetism is expected.
According to the Curie-Weiss analysis of the paramagnetic part, the paramagnetic
Curie-Weiss temperature 9p is negative in the very dilute Mn composition regime
(9p '" -8 K with S'" 2.5 for [Mn] = 7 x 10 19 cm- 3), and changes into positive when
the Mn composition is increased (9p '" 20 K with S '" 2.5 for [Mn] = 8 x 1020 cm >').
The EXAFS and near-edge x-ray absorption fine structure (NRXAFS) analyses on the
samples prepared by the same authors indicate that the most part of Mn substitutes
into the Ga sites, the valency of Mn is 2+, and that there is a possible formation of
Mn clusters (Soo et al. 2001b).
An n-type (Ga,Mn)N film with x = 0.07 on Al203 substrate was grown by MBE at
865°C using a nitrogen plasma source (Overberg et al. 2(01). The magnetization at 10 K
is nonlinear as a function of the magnetic field and small hysteresis are visible, indicating
that the film is ferromagnetic. Negative magnetoresistance and nonlinear dependence of
the Hall resistance are assigned to spin effects, though the negative magnetoresistance is
reminiscent of a weak localization effect.
14 F. MATSUKURA et at.
MBE-grown (Ga,Mn)N films with x = 0.06 and 0.09 were prepared using NH3 as
nitrogen source (Sonoda et al. 2002). The results of magnetization measurements are
similar to those of Kuwabara et al. However, Sonoda et al. claim that their (Ga,Mn)N
films show the ferromagnetic behavior even at room temperature. Indeed, the estimation
of Tc from temperature dependence of magnetization is 940 K, and no Mn-Ga and Mn-N
compounds with such high Tc have previously been found. (One should note that rather
high Tc ('" 750 K) has been observed in Mn-Ga alloys (Bither and Cloud 1965). Very
recently, the room temperature ferromagnetism in (Ga,Cr)N (Hashimoto et al. 2(02) and
(Ga,Mn)P:C (Theodoropoulou et al. 2(02) has also been reported.)
The magnetic properties of p-GaN implanted with high doses (3-5%) of Mn (annealed
at 700-1000°C after doses) have been investigated. The result shows that the sample is
ferromagnetic with Tc '" 250 K (Theodoropoulou et al. 200 1a).
(Ga,Mn)N film prepared by post growth Mn doping using solid state diffusion shows
ferromagnetic behavior at room temperature, which is confirmed by the observation of
an anomalous Hall effect (Reed et al. 2(01).
It seems that a considerable amount of work is needed to clarify the structural and
magnetic properties of (Ga,Mn)N.
• (Ga,Fe)N: GaN films doped with Fe, with concentrations up to '" 3 x 10 19 cm- 3
were grown by MBE at several Ts from 380 to 520°C directly on sapphire (0001)
substrates. Ferromagnetic behavior with Tc '" 100 K is observed only in the sample
grown at '" 400°C, in spite of quite a low concentration of Fe (Akinaga et al.
2000b). GaN:Fe films (Fe up to 6 X 102 1 cm >') grown by MBE at Ts = 500-8OO°C
show a superparamagnetic behavior (Kuwabara et al. 200 Ia, 200 1b) together with
superparamagnetic contributions of possible Ga-Fe and/or Fe-N inclusions. The EXAFS
analysis suggests that the decrease of Ts leads to a structural transition from wurtzite to
zinc-blende structure, and this transition may be related to the origin of ferromagnetism
in the GaN film with Fe (Ofuchi et al. 2oola). The emission channeling result on
annealed Fe implanted GaN (Fe concentration 10 17_10 18 cmr') shows that the majority
of Fe (80%) occupies substitutional Ga sites (Wahl et al. 200 I). p-GaN implanted with
a high dose of Fe (3-5%) shows ferromagnetic behavior, Tc '" 250 K (Theodoropoulou
et al. 200lb).
• (Ga,Mn)Sb and (Ga.CrjSb: The growth of bulk GaSb crystals heavily doped by Mn was
reported earlier, but whether an alloy between GaSb and Mn is formed remains unclear
(Aliyev et al. 1980; Adhikari and Basu 1984). GaSb films with a few percent of Mn or
Cr were also grown by MBE at Ts = 250-560°C (Abe et al. 2000,2001). The surface
morphology of MBE-grown samples observed by atomic force microscopy (AFM)
shows that these films contain clusters, which may be transition-metal-antimonide
compounds. The size of the clusters becomes smaller with the decrease of Ts.
For GaSb with Mn, magnetization measurements show a ferromagnetic behavior
even at room temperature, indicating the existence of ferromagnetic Mn-Sb clusters.
The larger coercive force for higher Ts may reflect the larger size of these clusters.
The increase of the magnetization at low-temperatures suggests the formation of
ferromagnetic zinc-blende (Ga,Mn)Sb. According to the saturation value of the
magnetization, only about 10% of the nominal Mn concentration contributes to the
formation of (Ga,Mn)Sb grown at Ts = 560°C, but 30% of Mn contributes to (Ga,Mn)Sb
m-v FERROMAGNETIC SEMICONDUCTORS 15
if Ts = 250°C. Magnetotransport measurements determine the properties of (Ga,Mn)Sb

without the influence of Mn-Sb clusters, and the data show a ferromagnetic behavior
with Tc ,.... 10 K and r - 30 K for Ts = 560°C and 250°C, respectively (Abe et a1. 2(00).
In the case of GaSb with Cr, both antiferromagnetic and ferromagnetic contributions
are detected. Due to an antiferromagnetic nature of Cr-Sb compounds, the magnitude of
the magnetization decreases with the increase of Cr content, whereas ferromagnetic hys-
teresis persist even at room temperature. The result of magnetotransport measurements
shows that (Ga,Cr)Sb grown at Ts = 550°C is antiferromagnetic at 1.5 K. (Ga,Cr)Sb
grown at 250°C is highly resistive at low temperatures « 100 K), which may be due
to the compensation of intrinsic holes in epitaxial GaSb films by the Cr ions (Abe et a1.
2001).
• Mn doped InSb: The properties ofInSb:Mn single crystals with [Mn] < 3.5 x 10 17 cm- 3
grown by the Czochralski method have been investigated extensively (Obukhov and
Pepic 1989; Obukhov 1993, 1996; Henriques et a1. 1999). Mn in InSb behaves as
a shallow acceptor (activation energy E a = 7 meV), and a metal-insulator transition
(MIT) occurs at low Mn concentrations (2x 10 17 cm- 3) due to a relatively large Bohr
radius of the bound holes. The interactions between the Mn spins are predominately
antiferromagnetic. A strong spin-dependent coupling between the Mn spins and holes
gives rise to large magnetoresistance effects, leading to the field-induced insulator-to-
metal transition in InSb:Mn at low temperatures (Obukhov 1996; Henriques et a1. 1999).
An anomalous Hall effect, whose coefficient is larger for lower Mn concentrations
(2 x 10 16 < [Mn] < 3 x 10 17 cm- 3) , has been observed (Obukhov and Pepic 1989).
3. Lattice properties
3.1. Lattice constants

X-ray diffraction (XRD) measurements show that (Ga,Mn)As has the zinc-blende structure
without detectable second phase. The results for the (004) reflection using Cu- Ko radiation
show that the lattice constant a of (Ga,Mn)As increases with the increase of x as shown in
fig. 7a (Ohno et a1. 1996a). Asymmetric double-crystal XRD on (224) or (115) reflection
demonstrates that the (Ga,Mn)As films are fully strained at least up to 2 JLm (fig. 7c)
(Shen et a1. 1999). The reciprocal space mapping on the (004) plane confirms also that
the (Ga,Mn)As layers are fully strained (Sadowski et a1. 2000). This rather high critical
thickness is probably due to the low growth temperature, which prevents dislocations
from nucleating (Price 1991). The direction of the strain can be controlled by using a
thick lattice-relaxed (In,Ga)As buffer layer, which has a larger lattice constant than that of
(Ga,Mn)As as shown in fig. 7b (Ohno et a1. 1996b ). The peak corresponding to (Ga,Mn)As
on (In,Ga)As is located at the higher angle side of GaAs, indicating that the film is now
under a tensile strain. In order to calculate the relaxed lattice constant Qo, it is assumed that
elastic constants of (Ga,Mn)As are the same as in GaAs (Poisson ratio: v = 0.311). On the
other hand, since thick (In,Mn)As films on GaAs are fully relaxed, a o of (In,Mn)As can be
directly determined from the positions of the diffraction peaks.
The dependencies ao(x) for (Ga,Mn)As and (In,Mn)As, as determined by XRD, are
summarized in fig. 8. In both materials, ao depends linearly on x following Vegard's
(a) (Ga,Mn)As
x=0.015
x=0.035
=0.07~ \,
.' I \
...
•
•I
f
(b)
~
'fi) 65 66
c:
~ 2(} (deg)
c:
- (c) (224) reflection
" - high incident angle
, \ - - low incident angle
, l-(Ga,Mn)As_
'I 2IJ.m
I (AI,Ga)As , GaAs
, I
-1500 -1000 -500 o 500
to (arcsec)
Fig. 7. X-ray diffraction curves for (Ga,Mn)As films obtained with Cu Ka radiation. (a) Mn concentration
dependence of peak positions [(004) reflection] of 150-nm thick (Ga,Mn)As grown on GaAs with compressive
strain (Ohno et aI. 1996a). (b) (Ga.Mn)As grown on (In,Ga)As buffer layer with tensile strain. (c) Double-crystal
x-ray diffraction curves for a 2 /lm-thick (Ga.Mn)As showing the asymmetric (224) reflection with high- and
low-incident angle (Shen et aI. 1999).
law, which for (Ga,Mn)As assumes the form a o = 0.566(1 - x) + 0.598x (nm) (Ohno
et at. 1996a). The lattice constant is known to depend on the growth conditions such as
As pressure and/or growth temperature due to the corresponding excess of As (Shimizu
et at. 1999; Haneda et at. 2000a). A growth of (Ga,Mn)As under other conditions gives
a o = 0.5654(1 - x) + 0.5901x (nm) (Sadowski et at. 2001a). It is shown that the lattice
constant of (Ga,Mn)As depends on the growth condition, probably due to the excess As
incorporation and the formation of a Mn-As complex (Schott et at. 2(01). The extrapolated
values of ao(x) for x ~ 0 are in good agreement with the actual GaAs and InAs lattice
constants, respectively. The extrapolated lattice constants for hypothetical zinc-blende
0.61 r--.....- ......--,........ ..,.-.-oIIIIIIr--.,

..-..
E 0.60 (In,Mn}As
c:
'-'
C 0.59
~c:
o
o 0.58
Q)
0567
o E
Eto 0.57
s • 0566
-.J
0 5 6 5 ' - - - - -....
0.566 nm 000 0~4 008
0.56 .........._ .....- -......_ ....._ -...._ .....
0.0 0.2 0.4 0.6 0.8 1.0
Mn Composition x
Fig. 8. Cubic lattice constant ao versus Mn composition x in Gal_xMnxAs and Inl_xMnxAs films. Inset shows
the magnified view of the results for (Ga,Mn)As films (Munekata et al. 1989; Ohno et aI. I996a).
MnAs determined from (Ga,Mn)As and (In,Mn)As data show a good correspondence. This
suggests that virtually all Mn atoms occupy the substitutional sites. The lattice constant of
hypothetical zincblende MnAs in the ferromagnetic state has been predicted to be 0.59 nm
by first-principle calculations (Shirai et al. 1998; Ogawa et al. 1999).
3.2. Local lattice configuration (EXAFS)

An extended x-ray absorption fine structure (EXAFS) study, carried out using the Mn
K-edge, of thick (~ 111m) (In,Mn)As reveals that Mn is incorporated substitutionally into
the In sites. This is especially true for low x (,..., 0.0 I) samples grown at low Ts (200°C).
Although the substitutional signal is still dominant, either increasing of x above 0.1 or
raising Ts to 300°C results in a modification of the local structure. In the case of greater
x or higher Ts, the local structure shows that Mn is incorporated in the form of hexagonal
MnAs (NtAs-structure) (Krol et al. 1993; Soo et al. 1996).
Fluorescence EXAFS studies of a (In,Mn)As thin layer (10 nm) grown on a GaSb buffer
layer and of (In,Mn)As quantum dots (QDs) on GaAs were also performed. The results
show that in the thin (In,Mn)As layer, the In-site substitutional Mn and the NiAs-type
MnAs coexist, whereas the majority of Mn atoms are substituted into the In-sites of InAs
in (In,Mn)As QDs. It is argued that the difference of the strain deformation between the thin
layer (with strain) and thick layer and QDs (strain relaxed) is responsible for the differences
in the local structure of the Mn atoms (Ofuchi et al. 200 Ib).
EXAFS measurements of (Ga,Mn)As (x = 0.005 and 0.074) also indicate that Mn atoms
are substitutionally incorporated into the Ga sublattice (Shioda et al. 1998). The Mn-As
bond length is found to be 0.249-0.250 nm, longer than the host Ga-As bond length
(0.244 nm) and shorter than the expected bond length of Mn-As in the hypothetical zinc-
blende MnAs (0.259 nm).
3.3. Atomic-scale observations by scanning tunneling microscopy (STM)
Cross-sectional scanning tunneling microscopy (XSTM) measurements were carried out

for a cleaved (110) surface of GaAs doped with Mn. The samples were cleaved in an
ultrahigh vacuum (UHV) chamber in order to expose the atomically flat (110) surface. The
measurements have been done in the UHV chamber at room temperature.
The defects and impurities of Mn-doped GaAs (Mn composition < 0.001) layers grown
at 400°C are identified in the XSTM images. The results show that Mn impurities have
negative charge, indicating that Mn acts as an acceptor. The Mn acceptor concentration
deduced from the XSTM images is in a good agreement with the hole concentration
determined by Hall measurements at room temperature. As-vacancy defects are also
observed. Since the number of the vacancies increases with time, they are presumably
formed after the cleavage due to the desorption of As atoms from the surface. No As-
antisite related defects are detected in the samples grown at 400°C (Tsuruoka et al. 2000,
2002).
XSTM images for Mn-doped GaAs (Mn composition = 0.005) grown at 255°C show
that there are numerous As-antisites, the concentration of which is '" 1 x 1020 em -3,
similar to LT-GaAs. The Mn concentration determined from the images is 7 x 1019 em -3,
which is consistent with the nominal Mn concentration, '" 1 x 1020 em -3. The tunneling
spectrum reveals the presence of a state in the midgap region caused by the As-antisite
donors and a shift of the Fermi energy brought about by the incorporation of Mn because
of its acceptor nature (Grandidier et al. 2000).
4. Spin and charge states of Mn in 111-V magnetic semiconductors
Various properties of Mn impurity centers have been investigated by many methods, such
as magnetic resonance and magnetization measurements, for a long time. It is expected
that there are three possible electronic states of the Mn impurity substituting a trivalent
cation: AO(d4 ) and AO(d 5+h) for Mn 3+ , and A-(d5 ) for Mn 2+ . AO denotes the neutral
center, A - is the negatively charged center, and the notation in parentheses is the electronic
configuration of the d electrons. There have been no reports on the observation of AO(d4 )
neutral centers in GaAs. In contrast, the anisotropy of some of electron spin resonance
(ESR) lines in the illuminated n-type GaP:Mn can be explained in terms of AO(d4 ) centers
(Kreisel et al. 1996) that undergo a Jahn-Teller distortion, as observed for Cr(3d 4 ) in GaAs
(Krebs and Stauss 1977).
In the case of the AO(d4 ) center the hole resides in the 3d shell. However, strong Hund's
intra-site exchange interaction may favor a state having five d electrons and a loosely bound
hole. This is the case of the AO(d5+h) configuration, where the A 0(d 4 ) center traps tightly
an electron in the 3d shell forming the high spin, S = 5/2, 3d5 configuration, and this
negatively charged Mn ion binds the hole in an effective mass state. Experimental results
discussed below indicate that the ground state of the Mn impurity in III-V compounds
corresponds to such AO(d 5+h) configuration.
4.1. Electron spin resonance (ESR)

The result of ESR measurements for bulk Mn doped GaAs (GaAs:Mn) with a Mn
concentration of ~~ I x 1017 cm- 3 is interpreted in terms of the AO(d 5+h) acceptor state.
Owing to the antiferromagnetic exchange coupling between the d-electrons and the p-like
hole, the total angular momentum is J = I (Schneider et aJ. 1987; Masterov et aJ. 1988).
The ESR spectra for bulk GaAs:Mn with a Mn concentration of 10 17 '" 10 18 cm- 3 show
resonance with unresolved hyperfine structure even at 4 K, which can be attributed to the
existence of A- (d 5 ) centers (Almelsh and Goldstein 1962). Results of low-temperature
magnetization measurements on GaAs:Mn with a hole concentration of 5 x 10 18 cm- 3 at
300 K are consistent with the coexistence of AO(d 5+h) and A-(d 5 ) centers (Mac et aJ.
1994).
Electron spin resonance (ESR) spectra for (Ga,Mn)As grown by LT-MBE show usually
only one resonance corresponding to g = 2.0 (Nojiri et aJ. 1998; Szczytko et aJ. 1999a).
This resonance can be attributed to A - (d5 ) centers. The ESR intensity becomes weak
around the Curie temperature; i.e., the observed signal is due to the ferromagnetic
resonance (FMR). The description of the observed signal in terms of the standard FMR
formula, in which the magnetic crystaJline anisotropy is neglected, indicates that the
magnitude of magnetization is smaller than that expected for the given x value. This
suggests that only a part of the Mn spins contributes to the ferromagnetic order in
(Ga,Mn)As. The conclusion is consistent with results of other studies that will be discussed
below. From the fine structure of the ESR spectrum of (Ga,Mn)As with x < 1.5 x 10-3 ,
the single-ion crystal-field anisotropy of the Mn spin energy was determined (Fedorych
et aJ. 200 I).
No signal of AO(d 5+h) centers is usually detected in (Ga,Mn)As grown by LT-MBE
(Nojiri et aJ. 1998; Szczytko et aJ. 1999a). The reason can be either the compensation by
the antisite donors in the low x limit or the high hole concentration for larger x values,
which leads to screening of the Coulomb potentials of the A- (d5 ) centers, resulting in
a low ionization energy of the holes and eventually to the insulator-to-metal transition.
A similar situation occurs in the case of (In.Mn)As layers (Szczytko et aJ. 2oola). A
negligible contribution of the centers other than A - (d5 ) suggests that the double-exchange
mechanism of the coupling between the Mn spins is ineffective. as this mechanism requires
the coexistence of the Mn ions with a different valence.
4.2. Optical spectroscopy

The results of infrared absorption measurements on GaAs:Mn prepared by the solid-
state diffusion method are also in good agreement with the AO(d 5+h) center model
(Linnarsson et aJ. 1997). According to infrared spectroscopy and photoluminescence (PL)
measurements for GaAs:Mn with a Mn concentration of '" 1018 cmr'. this acceptor level
is located 113 meV above the top of the valence band (Chapman and Hutchinson 1967;
Ilegems et aJ. 1975). Two photoluminescence (PL) lines observed by Liu et aJ. (1995) in
20 F. MATSUKURA et al,
magnetic fields up to 30 T were identified as radiative recombination of the hole bound to

Mn with the conduction band and donor electrons, respectively. From the field-induced PL
line splittings, an effective Lande factor of the neutral acceptor g = 2.47 was determined,
confirming qualitatively the ESR results discussed above. This work corroborated also an
earlier conclusion (Schairer and Schmidt 1974) about the absence of transitions involving
excitons bound to neutral Mn acceptors in GaAs:Mn. This surprising result was explained
by Bhattacharjee and Benoit a la Guillaume (2000) taking into account the presence of
a strong exchange interaction between the holes and Mn ions. In contrast, Sapega et al.
(200 I) assigned a weak line in their PL spectrum to such a transition. At the same time,
this transition energy corresponds to a resonant enhancement of spin-flip Raman scattering
studied in detail by Sapega et al. (200 I). However, to interpret their Raman spectra, a
coupling of bound excitons to more than one Mn ion had to be invoked by Sapega et al.
(2001). It appears probable, therefore, that the PL line and spin-flip Raman scattering in
question originate from complexes involving the hole interacting with a pair of nearest
neighbor Mn ions or with other types of Mn clusters. Isolated neutral acceptors, in tum,
being unable to bind any exciton, are invisible in spin-flip Raman spectroscopy. This would
explain why the p-d exchange energy determined by Sapega et al. (200 I) is much smaller
than those imply by other experiments.
4.3. X-ray magnetic circular dichroism (XMCD)

X-ray absorption spectroscopy (XAS) provides direct information of the 3d electronic
structure of Mn, since the 2p electron is ensured to be excited into 3d state because
of the dipole selection rule. The x-ray magnetic-circular dichroism (XMCD) spectrum
obtained for 150-nm thick (Ga,Mn)As with x = 0.02 in the photon energy region 630-
660 eV shows the two groups of rich peak structures associated with 2p3/2 and 2PI/2 final
state holes. The rich structures are caused by the spin-orbit interaction of the holes and
the Coulomb and exchange interactions between the 2p core and 3d shell (Ohldag et al.
2000). The temperature dependence of XMCD at 642.2 eV, at which the 2p3/2-related
signal has maximum intensity, can be well fit by a mean-field model with Tc of 37 K,
which is consistent with Tc: of (Ga,Mn)As with x = 0.02. Comparison of measured and
calculated XMCD spectra shows that a linear combination of Mn 3d5 (80%) and Mn 3d6
(20%) configurations gives the best agreement. This configuration appears to occur for
all Mn atoms whose spins are, therefore, highly localized and the magnetic moment is
about 4.5 /-LB. From the ratio of the observed MCD to the calculated MCD, only 13%
of Mn in (Ga,Mn)As contributes to the ferromagnetic order. This is consistent with the
magnetization measurement for (Ga,Mn)As with x = 0.023, where considerable amounts
of Mn spins behave as paramagnetic spins (Oiwa et al. I998a). For as-grown samples, XAS
shows two-component contributions of Mn to the spectrum. Since one of them disappears
after low-temperature heat-treatment « 300°C), it may be related to Mn-As complexes
(Katsumoto et al. 2001). The analysis of XAS and XMCD based on the cluster model
shows that the orbital momentum of Mn electrons is small and that the sign of the p-d
interaction is antiferromagnetic (Veda et al. 200 I). The result shows that the 3d electron
»,
count ofMn is '" 5 (Ao(d 5+h) or A -(d5 which is consistent with the lack of the AO(d4 )
centers in the ESR signals.
II1-V FERROMAGNETIC SEMICONDUCTORS 21
4.4. Photoemission
The core-level x-ray photoemission spectrum of the Mn 2p core level for (Ga,Mn)As
with x = 0.074 was measured and was analyzed by a configuration interaction (CI)
cluster-model assuming a Mn 2+ and Mn3+ ground state (Okabayashi et al. 1998). For
the d 5 configuration, the p-d exchange energy (which is conventionally referred to as NoP
for DMS) should be negative and NoP "" -1.2 eV is obtained for A-(d5 ) centers with an
optimized parameter set.
The resonant photoemission technique was used for several (Ga,Mn)As layers to
elucidate the nature of the Mn 3d partial density of states (DOS) (Okabayashi et al. 1999,
2001a, 200lb). The main structure of Mn partial DOS extends from the Fermi energy EF
down to -4.5 eV below it. The configuration interaction (CI) model calculation indicates
an enhanced Mn 3d electron count of 5.3. The largest contribution to the DOS at EF comes
from As 4p states. However, the Mn partial DOS extends up to the top of the valence
band, suggesting partial d character of the conducting holes. On the other hand, in-situ
measurement on an as-grown sample shows a suppression of the d character of the holes
at Fermi level, suggesting that the observed d-character of the conducting holes may be
related to the experimental error due to the surface condition (Okabayashi et al. 200lc). In
the region extending from the Fermi energy EF down to 0.5 eV below it, an increase in
emission intensity due to Mn-induced states is observed in Gal-xMnxAs with x = 0.035
and 0.069 (Okabayashi et al. 200la, 200lb). Since an insulator-to-metal transition occurs
in the vicinity of this Mn concentration (Oiwa et al. 1997; Matsukura et al. 1998b), it is
tempting to assign this DOS to Mn acceptor states merging with the valence band. No clear
Fermi edge is observed, which may be due to a relatively low hole concentration and poor
metallic conduction.
5. Magnetic properties
5. J. Magnetization
Magnetic properties of III-V DMSs can be measured by direct magnetization measure-
ments as well as magnetotransport measurements. In this chapter, we focus on the magnetic
properties of (Ga,Mn)As obtained by direct magnetization measurements. For (In,Mn)As,
since there are only limited magnetization measurements, we will describe magnetic and
magnetotransport properties together in the next chapter.
Direct measurements of the magnetization M of (Ga,Mn)As layers as a function of
magnetic field B and temperature T have been done using a commercially available
superconducting quantum interference device (SQUID) magnetometer. The temperature-
independent diamagnetic response of the thick GaAs substrate (which could occasionally
show a slight temperature dependence of unknown origin) can be determined from a
separate measurement of only the same GaAs substrate used for the epitaxial growth. It
can be also determined from the low-temperature high-filed magnetization measurements,
where the magnetization of the (Ga,Mn)As layer should saturate, or from high-temperature
measurements, where the magnetization of the (Ga,Mn)As of the epitaxial layer on the
substrate should be negligible. The diamagnetic component is then subtracted from the
total response to obtain the magnetization of the magnetic layer.
x =0.035, 150 nm
0.04 r-........-...-............- ................
B /I plane
003 r - - - - = ~ " '~", o o - o - <
~ooo
E
-003. >-0-<>0
-002
5K
LJ
1
i0
0.03r--------,
~ ~o 0
l:;.
~~ b
b
6
~
0000 100 200
T(K)
-0.04 ...........--t..............._ ................
-0.5 0.0 0.5
B (T)
Fig. 9. Magnetic field dependence of the magnetization at selected temperatures for a 150-nm thick
Gal_xMnxAs film with a Mn composition x = 0.035. The magnetic field is applied parallel to the sample sur-
face (direction of magnetic easy axis) except for the closed circles at 5 K taken in perpendicular geometry. The
solid line for 5 K shows the magnetization determined from transport measurements. The upper left inset shows
a magnified view of the magnetization in the parallel field at 5 K. The lower right inset shows the temperature
dependence of the remanent magnetization (Ohno et al. I996a).
Figure 9 shows magnetization curves at several temperatures of a ISO-nm thick

(Gao.96sMnO.03S)As layer grown on GaAs. where B is applied parallel and perpendicular
to the plane. As shown in the inset. when B is applied parallel to the plane. the M-B
curve shows a clear hysteresis as in the upper right inset. which indicates the presence
of ferromagnetic order. A paramagnetic response is often observed after closure of the
hysteresis in the magnetization curves. as seen in the 5 K curve of fig. 9 and shown
for (Ga.Mnjas with several Mn compositions in fig. 10. This paramagnetic response is
correlated with the transport properties of the film, the more metallic sample (in terms of
the metal-insulator transition (MIT» the less the portion of paramagnetic response (Oiwa
et aI. 1998a. 1999).
Shown in the lower left inset of fig. 9 is the temperature dependence of remanence of M
after switch off of the parallel B. which reveals that the Tc of the film is '" 60 K. Note also
that there is no indication of inclusion of MnAs with NiAs-structure (Tc '" 310 K) in the
trace. as only a negligible M is present above the Tc of (Ga.Mnjxs. This. however. is not
always the case. and a small non-zero M up to 300 K is occasionally observed. especially
in samples grown at higher Ts or having large x.
0.10 _ - - _ - - . . - - - _ - - " ' "

(Ga,Mn)As I LT-GaAs x = 0.071
2K ••••<;)••••
<}o.'.~
.~
sa··...., ,."., -..-.~"-
••••A-
. ..
.·0 .. ~....
v
x = 0.053
~ 0.05 #j:.-..,_·' i}_·' i}_·~;;:' cM·

~ x=0.035
x= 0.022
t::.. _O-_O-J::>--~-
x· 0.015
0.00 fIIII:; _ _...._ _.a... ...
o 2 4
B (T)
Fig. 10. Magnetization for six samples of Ga I-x Mn, AslGaAs with Mn compositions x ranging from 0.015 to
0.071 at 2 K. The magnetic field is perpendicular to the sample surface for x = 0.035-0.071 and parallel to it
for x = 0.015 and 0.022. The dashed lines show fit to the mean-field Brillouin function and the solid line for
x = 0.015 (paramagnetic sample) a fit to the Brillouin function (Oiwa et al, 1998a).
The solid line in fig. 9 shows M determined by the transport measurements, where
the Hall resistance is almost proportional to the perpendicular component of M, as
described in the next section. The good agreement between M determined by SQUID
and transport measurements indicates that one can correctly determine M of (Ga,Mn)As
by magnetotransport measurements.
=
The saturation magnetization MSal (M at T 5 K and B > 5 T) of the samples shown in
figs 9-11 indicates that S = 2.0-2.5 when calculated using MSat = x Nog /LaS and nominal
x as well as neglecting the hole contribution (Dietl et al. 200lc). Although S is related
to the valence of Mn and thus to the mechanism of ferromagnetism, a more accurate
determination of S from magnetization measurements is not possible because of the error
involved in the determination of the x value (±IO%).
Figure Ila presents magnetization determined for a 200-nm thick film of
Gao.947MnO.053As. Here almost no hysteresis is observed because B is applied perpendic-
ular to the sample plane along the magnetic hard axis. The inset displays the temperature
dependence of the remanent magnetization for B II plane, showing that Tc is above lOOK.
Using Arrott plots to minimize the effect of magnetic anisotropy and domain rotation (Ar-
rott 1957), the spontaneous magnetization Ms at each temperature is determined from
the curves in fig. lla and plotted in fig. lib. The Tc of this sample is about 110 K. The
non-standard temperature dependence of Ms shows a rather steep increase at low T. The
temperature dependence of the inverse susceptibility 1/ X shown in the same figure gives
a paramagnetic transition temperature () consistent with the Tc determined from Ms. For
the extrapolation of 1/ x, data points above 150 K were used.
5K
(a)
x= 0.053 25K
0.03 55K
B 1.. plane
100 K
E
::e 0.00 125 K
250K
B /I plan
-0.03
200
--<I
-0.06~===:::L;..--~--_.....:..I:",--"",,"-~
-5 5
J
(x10 ) 1.5
0
1.0
E .....
::e'" 0.0 ~
.5
0.000 100 200 3~0

T (K)
Fig. II. (a) Temperature dependence of the magnetization for 200-nm thick Gal_xMnxAs with x = 0.053.
The magnetic field is applied perpendicular to the sample surface (hard axis). The inset shows the temperature
dependence of the remanent magnetization (0 T) and the magnetization at I T in a field parallel to the film surface.
(b) Temperature dependence of the saturation magnetization MS determined from the data shown in (a) by using
Arroll plots (closed circles). Open circles show inverse magnetic susceptibility and the Curie-Weiss fit is depicted
by the solid straight line (Ohno and Matsukura 2(01).
The Curie constant C = g2J1.~xNoS(S + 1)/3kBT, determined from l/X-T curve

shown in fig. l lb gives a spin of S ~ 3, when the nominal value of the Mn concentration,
x = 0.053, is used. Here No is the cation density, g (= 2.0) the Lande factor of the Mn ions,
J1.B is the Bohr magneton, kB is the Boltzmann constant. Judging from this value of S, some
ferromagnetic clusters exist already above Tc ;
Magnetization measurements on semi-insulating (Ga,Mn)As:Sn, in which the holes are
compensated by Sn donors, point to a paramagnetic behavior. The Curie-Weiss (l/X-T)
plot gives TAF '" 2 K, indicating that the "intrinsic" mechanism of the interaction between
the Mn spins is the antiferromagnetic superexchange (Satoh et al. 1997,2001). This means
that the ferromagnetic coupling in (Ga,Mn)As is induced by the presence of the holes.
5.2. Magnetic anisotropy

As shown in fig. 9 for the magnetization at 5 K, the magnetic easy axis is in the plane of
the film, and shows a weak four-fold symmetry within the plane. The anisotropy energy
0.15 ..... ......_ .......... ~
0.10
0.05 .,
0.00
r e
_ 00
0
-0.05 - -15
-
~ -0.10
••• 300
_. -600
--; 0.031====+=+~..-.oll-- ....+-.....-t

I 1.5 urn (Gao 9BSMnO o3s)As Irr~=ro=:=-==,=:: !II
a:: 0.02 LT-GaAs
T= 2.3 K
0.01
0.00
compressive slraln
-0.01
-0.02 ;I
-0.03 .........................l........................._ ......
-0.5 0.0 0.5
B (T)
Fig. 12. Hall resistance RHall of (a) (Ga,Mn)As/(In,Ga)As and (b) (Ga,Mn)As/GaAs as a function of the
magnetic field for various angles between the field and the sample surface normal. (Ga,Mn)As films in (a) and
(b) are under tensile and compressive strain. respectively. Clear hysteresis and angle independent heights of the
hysteresis in (a) show that magnetic easy axis is perpendicular to the sample surface. whereas the easy axis in (b)
is in-plane (Shen et al. 1997a).
K calculated from the difference between the two magnetization curves at 5 K with B.l..
plane and B II plane is K = 2.9 x 103 J/m3 • This anisotropy energy of (Ga,Mn)As is strain
dependent (Ohno et a1. 1996b; Shen et a1. 1997a) and is also expected to depend on the
hole concentration (Abolfath et a1. 2001; Dietl et a1. 2oo1c). The strain in the film shown
in fig. 9 is -0.24%. The magnetic easy axis can be made perpendicular to the plane by the
reversing the sign of strain in the film.
Figure 12 shows clearly the different directions of the magnetic easy axis for the different
buffer layers. Figure 12a shows the direction of the B dependence of the Hall resistance
RHall for (Ga,Mn)As with tensile strain on a thick lattice-relaxed (Ino.16Gao.84)As buffer
layer and fig. 12b for (Ga,Mn)As with compressive strain on a GaAs buffer layer. Only
the (Ga,Mn)As with tensile strain shows a clear hysteresis which suggests a change of the
direction of the magnetic easy axis. The height of the hysteresis is almost independent
of the direction of the magnetic field, which shows that the direction of the easy axis is
perpendicular to the plane. On the other hand, (Ga.MnjAs with compressive strain shows
only a small hysteresis and no perpendicular component of the remanent magnetization.
The result confirms that the direction of the magnetic easy axis of (Ga,Mn)As with
compressive strain is in-plane (Ohno et al. I996b).
The significant increase of coercive force and Ti; of (Ga.Mn)As with spinglass
(Zn,Mn)Se overlayer on it are observed. The observed effects are technological important
to control the hardness of ferromagnetism. Although the origin of which is not clear yet,
it is most probably related to the exchange coupling between (Ga,Mn)As and (Zn,Mn)Se
(Liu et al. 2(01).
5.3. Magnetic domains

Using a scanning Hall microscope, a stripe-shaped domain structure has been observed in
a (Ga,Mn)As sample with tensile strain and perpendicular easy axis (Shono et al. 2000;
Fukumura et al. 2(01). The Baukhausen noise due to the scattering from the domain
wall movement has also been observed in magnetotransport measurements (Hayashi et al.
2(00).
Ac-susceptibility measurements on (Ga,Mn)As with x = 0.042 have been performed
in alternating B from 0.1-4 mT. In the temperature dependence of susceptibility, there is
a sharp peak at about 48 K at 0.1 mT, which suggests a ferromagnetic phase transition.
The temperature and magnetic field dependence is rather complicated and an increase of
B involves additional peaks (the number of which up to 4), which may be due to domain
formation and domain wall movement (Sadowski et al. 2(00). There is also a report about
ac-susceptibility measurements on (Ga,Mn)As with x = 0.07, which shows that there is
no difference between the field-cooled and zero-field cooled ac-susceptibilities measured
with B = 10 mT (Van Esch et al. 1997).
5.4. Cantilever magnetometry

Torsional magnetometry using submicron GaAs micromechanical cantilevers is useful for
measuring the magnetic properties of small samples over a wide range of applied magnetic
fields and temperatures. Since (Ga,Mn)As can be grown epitaxially on GaAs, it can be
incorporated in a GaAs cantilever using photolithography. l5-lLm-radius disk-shape mesas
of (Gao.962MnO.03S)As samples with 6 nm and 20 nm of thickness have been fabricated at
the end of the cantilevers and their magnetic properties have been investigated (Harris
et al. 1999). The cantilevers are 50 ILm wide and 100 nm thick and the longest lever
is '" 400 ILm long. The cantilever with (Ga,Mn)As shows a twist of several degrees in
the last 50 ILm due to the lattice mismatch between GaAs and (Ga,Mn)As. From the
measurement, it is found that the torsional magnetometers have quite a high sensitivity
of 3 x 106 ILB at 0.1 T. The obtained magnetization curves for 20-nm thick (Ga,Mn)As
shows ferromagnetic behavior with an in-plane easy axis, being consistent with the results
obtained with a SQUID magnetometer for much larger samples. From the temperature
dependence of the remanent moment, Te is determined as 39 K. Illumination of the sample
with a blue light-emitting diode (LED) has no measurable effect on the magnetization of
(Ga,Mn)As either above or below Te. Measurement on 6-nm thick (Ga,Mn)As shows no
ferromagnetism down to 350 mK, which is consistent with SQUID results (Tanaka 1998).
6. Magnetotransport properties
Due to the presence of the anomalous Hall effect (known also as the extraordinary or
spin Hall effect), magnetotransport measurements provide valuable information on the
magnetism of thin films. The Hall resistance RHall is empirically known to be a sum of
ordinary and anomalous Hall terms,
(1)
Here, Ro and Rs are the ordinary and anomalous Hall coefficients, respectively; d
is the thickness of the conducting channel; Ml. is the component of magnetization
perpendicular to the sample surface (Chien and Westgate 1980), and Rs is proportional
to R~heel with temperature-independent proportionality constant, where Rsheel is the sheet
resistance. Usually, y is either 1 or 2 depending on the origin of the effect; the skew-
scattering mechanism results in y = I, whereas for the side-jump mechanism y = 2. The
proportionality constant, which determines the overall magnitude of the anomalous Hall
effect, scales with the strength of the spin-orbit coupling for the carriers at the Fermi level
as well as with the exchange energy describing the ratio of carrier spin polarization to
magnetization M«. Accordingly, at given Ml.' the effect is expected to be much stronger
for the holes than for the electrons in the tetrahedrally coordinated semiconductors.
Furthermore, since its magnitude depends on the degree of spin polarization of the carrier
liquid, it ceases to be proportional to the magnetization when the carrier spin-splitting
becomes comparable to the Fermi energy.
Because of the high sensitivity, the determination of the magnetization by magneto-
transport studies is the important technique for thin films of diluted magnets, in which the
magnitude of the total magnetic moment is rather small. Accordingly, recent years have
witnessed a renewed interest in the theory of the anomalous Hall effect (Hirsch 1999; Ye
et al. 1999; Zhang 2000; Ferrand et al. 2000; Crepieux and Bruno 2001; Jungwirth et al.
2002). Theoretical calculations for p-type OMS, based on the side-jump mechanism, sug-
gests an increase of the Hall conductivity with the decrease of the carrier concentration
(Jungwirth et al. 2002). Experimental results discussed below: (i) demonstrate the criti-
cal importance of the Hall effect in the assessment of the magnetic properties of III-V
ferromagnetic semiconductors; (ii) suggest that both side-jump and skew-scattering mech-
anisms operate (iii) point to various effects that can lead to differences between magne-
tizations determined by standard and Hall magnetometry. Furthermore, the accumulated
magnetoresistance data indicate a significance of the spin-disorder scattering as well as re-
veal various effects associated with the interplay between spin and localization phenomena,
specific to doped OMS in the vicinity of the metal-insulator transition (Dietl 1994).
6.1. (Ga,Mn)As
6.1.1. The Hall effect
Figure 13a presents the Hall resistance RHall at various temperatures plotted as a
function of the magnetic field for the same sample, for which magnetization data were
collected in fig. I I (200-nm thick Gao.947Mno.o53As). The inset shows the temperature
0.03 ....
;- :..:.:..'~:..:.;...:.:;,,;.~
(a) x =0.053 2K
/ ............. 1b~~~~ ..~.
-c B ..L plane 25 K
55 K
/
1 , ~
~ .~ .. ~. 125 K
---
~
( ij 0.00 . ,..........................'1'-: . '05'" •• , •••.•:: .••••••••••

300 K
o::I ..........
",0"
t
_
g
~
0.4 .•.•.•._'~ . . . .
-r.;.... ~ ~ O O K
~2.5.~5~ ~.~ •• ""
..~.. / I
.,~'
..•.•
. ~ •. ~ •. ~
: -: -. -: . -: . ~
_/ ,J ./
• . . • . .
ll:.
····2K,
03
....25K ...•
..::""", _
-5 8?n
30CK
5
-0.03
-5 o 5
B (T)
0.08
...... III
-..,
Qj
Q)
o::lIls: 0.04
l1)
............ 0-
I
(ij
--
C
0:: 0.02 ::J
;::;:
0.0
---en
200 300
T (K)
120
(c)
----
~
80 ~
40 ~
8.00 0.04 0.08

X
Fig. 13. (a) Temperature dependence of the Hall resistance RHaJl for the same sample as in fig. II. The inset
shows the temperature dependence of the sheet resistance Rsheet. (b) Temperature dependence of the saturation
magnetization [RHaJlI RsheedS obtained using Arrott plots (closed circles) and inverse susceptibility I/XHaJl
(open circles), both from the transport data shown in (a). Solid lines depict [RHaJl 1Rsheells and II XHaJl calculated
assuming the mean-field Brillouin behavior for the Mn spin S = 5/2 and the Curie-Weiss law, respectively. (c) Mn
composition dependence of the magnetic transition temperature Te. as determined from transport data (Ohno and
Matsukura 2001).
dependence of Rshcct- A close similarity between the results of figs 13a and lla indicates
that the contribution from the ordinary Hall term is rather small in the displayed field
and temperature range. Thus, if skew-scattering is assumed, RHall :=:= c RSheetM, where
c is a temperature-independent constant. Actually, a comparison of magnetization and
magnetotransport data suggests the value of the exponent y to be between 1 and 2
at low temperatures, and that the assumption of either mechanism leads to virtually
identical conclusions about the magnetic properties. In particular, since RHall/ Rshcct ex M,
Arrott's plots can be employed to determine the temperature dependence of spontaneous
magnetization Ms.
The outcome of transport measurements is summarized in figs 13b and 13c. The
values of Tc are in good agreement with those determined from the direct magnetization
measurements. As shown in fig. 13c, the value of the Curie temperature is almost
proportional to x up to x of about 5% according to Tc :=:= 2000x ± 10 K. However, a further
increase of x decreases Te. The origin of this behavior is unclear; it may result from the
compensation by interstitial Mn donors (Yamamoto and Katayama-Yoshida 1999; Masek
and Maka 200 1) and/or from changes in the local spin configurations (van Schifgaarde and
Mryasov 2(01).
The temperature dependence of Ms determined by the magnetotransport measurements
can be fitted rather well by the mean-field Brillouin function, as shown by the solid line
in fig. 13b (Matsukura et a1. 1998b). Owing to a moderate temperature and magnetic
field dependence of Rsheeh this conclusion remains valid assuming RHall :=:= c'R;heetM.
However, a rather different temperature dependence stems from the direct magnetization
measurements (fig. l lb). To conjecture about the origin of this difference one should
note that the anomalous Hall effect scales with the spin polarization of the carrier liquid.
This polarization is proportional to the magnetization only if (i) the spin-splitting is
much smaller than the Fermi energy and (ii) the contribution of the carriers to the
total magnetization can be disregarded. Furthermore, the anomalous Hall effect does
not provide information about the magnetization of the whole samples but only about
its value in regions visited by the carriers. Just in these regions the carrier-mediated
ferromagnetic interactions are strong. Thus, since near the metal-insulator boundary
the carrier distribution is highly non-uniform, magnetotransport and direct magnetic
measurements may provide different magnetization values (Dietl et al. 2000).
Parenthetically, no clear indication of the presence of MnAs clusters has been observed
in the transport results, even in the cases where direct magnetization measurements detect
their presence. One of possibilities is that the Schottky barrier formation around the MnAs
clusters prevents their interaction with the carriers.
6.1.2. Temperature and magnetic field dependence of resistivity

The temperature dependencies of the resistivity p in 200-nm thick layers of Ga I-x Mn, As
with different Mn content x are displayed in fig. 14. In terms of the metal-insulator tran-
sition (MIT), these films can be cost into two categories. Low- and high-Mn composition
samples (x < 0.03, x > 0.06) are on the insulator side of the MIT, whereas the layers con-
taining intermediate Mn concentrations (0.03 ~ x ~ 0.06) are metallic. All samples exhibit
a negative magnetoresistance (MR) at low temperatures. Quite generally, the MIT occurs
1 200-nm (Ga,Mn)As / (AI,Ga)As

10 2
1.0 x 10'
- E
o
c
......... 10.1 x
~ 0.015
0.022
~:-::--..r-L,~0.071
0.035
0.043
~ ..........__...a...._ _.....................__..z0.053
o 100 200 300
T(K)
Fig. 14. Temperature dependence of the resistivity p at zero magnetic field for Gal_xMnxAs films with
x = 0.015~.071. Samples with x = 0.035~.053 exhibit metallic behavior. The inset shows an expanded view
for the sample with x = 0.053 together with the dependence on the magnetic field (Matsukura et aI. 1999b).
if the kinetic energy of holes at the Fermi level is high enough to prevent localization by
disorder associated with the presence of Mn acceptors and compensating donors.
The temperature dependence of p in the metallic (Ga.Mn)As samples show a maximum
around Tc (the inset to fig. 14). where the negative magnetoresistance also peaks; p
decreases by 20% in B = 7 T (at 100 K) (see the insets to figs 13a and 14). Such
behavior suggests the presence of spin disorder scattering by thermodynamic fluctuations
of the magnetization. In particular. the peak around Tc can be interpreted in terms of a
critical scattering by packets of ferromagnetic ally coupled spins. whose correlation length
is comparable to the wavelength of the carriers at the Fermi level (Matsukura et al. 1998b;
Omiya et al. 2000). Such spin-disorder scattering may also perturb the position of the
mobility edge, affecting the temperature dependence of the conductivity (Van Esch et al.
1997). The negative MR occurs because the field-induced spin-alignment reduces the spin-
disorder scattering.
The effect of critical scattering on the resistance was evaluated assuming that the holes
reside in a simple parabolic band (Omiya et al. 2000). The corresponding contribution to
the resistivity has to take into account the presence of correlation between neighboring
spins. (SiSj) #- (S;)Oij (Dietl 1994).
2 kF m 2 fJ2 kBT
PS = 2iT - 2 -3-2"2[2x.d T • B) + XII(T. B)]. (2)
pe h g /-LB
. . •
1.00 ~ T
I • P
xT
iT
(J
- 0.90 ~ -IT
E
0 -.T-'T1'
-
c:
~ 0.80 ~~£T .
~~2
~~TTT
~.IIl.T
~
0.70 ~
. . .
150 200 250 300
T(K)
Fig. 15. Temperature dependence of the resistivity for a 200-nm thick film of Gal_xMnxAs with x = 0.053 in
the high-temperature paramagnetic region. Solid squares and open circles show experimental data and the fitting
using eq. (2), respectively (Omiya et aI. 2000).
Here kF is the Fermi wave vector determined from the value of the hole concentration p
assuming a spherical Fermi surface, m is the hole effective mass taken as 0.5mo (mo is
the free electron mass), fJ is the exchange integral between the holes and the Mn spins,
and h is Planck's constant. The transverse and longitudinal magnetic susceptibilities are
determined from the magnetotransport data according to Xl. = aM / aB and X" = M/ B.
As shown in fig. IS, eq. (2) reproduces the high-temperature part of the temperature
dependence of p (Omiya et al. 2000); the data can be fitted by XT, the temperature
dependence characteristic for critical scattering. On approaching Tc; however, the XT
fit deviates from the experimental points. This is, presumably, because no dependence
of the magnetic susceptibility X on the wave vector q is taken into account. Since X (q)
is a decreasing function of q in ferromagnetic materials, eq. (2) overestimates the critical
scattering, particularly near Tc, where X (q = 0) diverges. As shown in fig. 16, the negative
MR can be explained by a reduction of spin-dependent scattering in the magnetic field,
according to eq. (2).
From the fit of eq. (2) to the temperature and field dependencies of p, the exchange
energy INofJ I was evaluated by Omiya et al. (2000). Both T and B fits yield INofJ I of
1.5 ± 0.2 eY. Though this value of the exchange energy compares favorably with that
determined by photoemission experiments on (Ga,Mn)As, 1.0-1.2 eV (Okabayashi et al.
1998), it should be stressed that it has been obtained disregarding effects of localization.
Another possible source of ambiguity is the complex valence band structure, not accounted
for in eq. (2).
A rather large negative MR, with a substantial anisotropy, has been observed in
'reentrant' insulating samples with high x (Oiwa et al. 1998b; Katsumoto et at. 1998).
A destruction of bound magnetic polarons, as invoked in an earlier work on (In,Mn)As
x10-3 d=200nm
8.0 r"-P~f-r-T"""" __T""'I"""T'"""""""""'....-r-.......__'P-o
x = 0.053 'J exp

B -l plane --fit
-c:
E
o 200K
-c:..
7.5
.-. ~- ., ... '''; ....."".,..

250 K
7.0 .......
-10 -5 o 5 10
B (T)
Fig. 16. Magnetic field dependence of the resistivity for a 200-nm thick film of Ga I _ .r Mn x As with x = 0.053 in
the high-temperature paramagnetic region. The solid lines show the fitting using eq. (2) (Omiya et al. 2000).
(Ohno et al. 1992), and an increase in the hole kinetic energy due to giant spin-splitting,
are suggested as mechanisms leading to the enhanced conductivity in the magnetic field.
The latter can be particularly strong in p-type materials, in which the exchange splitting
mixes heavy and light hole subbands (Wojtowicz et al. 1986).
The theoretical model describes transport properties of (Ga.MnjAs (T and B depen-
dence) by using Zubarev's double-time Green's function rather well (Kuivalainen 2001).
The results show that the spin scattering (spin disorder scattering and critical scattering) as
well as ionized impurity scattering have significant contributions to the total carrier mobil-
ity. For better understanding, an improvement of the theory is necessary, which includes
the effect of disorder, the formation of polarons, etc.
Anisotropic magnetoresistance has also been observed in metallic (Ga,Mn)As, which
depends on the relative direction between the magnetic field and the current. For
(Ga,Mn)As with compressive strain grown on a GaAs buffer layer, the resistance is
higher when the magnetic field is perpendicular to the measuring current than when the
two are mutually parallel (Baxter et al. 2(02). On the other hand, for (Ga,Mn)As with
tensile strain grown on an (In,Ga)As buffer layer, the resistance is lower when a magnetic
field perpendicular to the current (Sugawara et al. 1997). The origin of the anisotropic
magnetoresistance is not clear yet.
Because of the dominance of the anomalous Hall term in wide temperature and
field ranges, it is not straightforward to determine the carrier type and concentration
in ferromagnetic semiconductors. Only at low temperatures and in very high fields, the
anomalous Hall term saturates, so that the ordinary Hall coefficient can be determined
from the remaining linear change of the Hall resistance in the magnetic field. Note that
although M saturates in relatively low magnetic fields, the negative MR usually persists,
and generates the field dependence of the anomalous Hall coefficient.
30
30.5
-.a..... 20 -9.
'ii
30.0
50mK
:I: exp
z"iii 0:: --linear fit
rr. 10
29.5
22 24 26 28
0
(a) an
0.0
-e
l-0.1
-0.2 L L . _...._ ...... _ ~ _ ................- - '

o 10 20 30
B (T)
Fig. 17. Magnetotransport properties of a 2oo-nm thick film of Ga I-x Mnx As with x = 0.053 at 50 m K in high
magnetic fields. (a) Hall resistance. which is a linear function of the magnetic field in the high-field region (inset).
(b) Sheet resistance; negative magnetoresistance tends to saturate in the high-field region (Omiya et aI. 2000).
Measurement of RHall at 50 mK in the field range of 22-27 T on the sample with

x = 0.053 revealed that the conduction is of p-type, consistent with the acceptor character
of Mn. The determined hole concentration was p = 3.5 x 1020 em -3, about 30% of the
nominal concentration of Mn (fig. 17) (Omiya et al. 2000). A similar value of the hole
concentration. which is almost independent of x, has been obtained from the Seebeck
coefficient assuming a simple model of the valence band (Osinniy et al. 2001).
If all Mn centers are acting as acceptors in the metallic sample described above, 70%
of them must have been compensated by donors. The most natural candidates for these
donors are As antisite defects, which act as deep donors in GaAs. Accordingly, (Ga,Mn)As
should become insulating at room temperature when the density of As anti sites exceeds the
density of shallow acceptors. Because the magnitudes of these densities are comparable and
moreover fluctuate from run to run depending on subtleties of the growth conditions, we
expect the overcompensation to occur occasionally. However, no such 'overcompensated'
sample has been obtained so far. This seems to call for mechanisms controlling the
upper limit of the excess As concentration (Luysberg et al. 1998) and/or leading to
autocompensation of Mn but not to overcompensation (Walukiewicz 1988). One candidate
for the latter might be the Mn interstitial, which is a donor according to first principles
calculation (Yamamoto and Katayama-Yoshida 1999; Masek and Maka 2001). Another
34 F. MATSUKURA et at
candidate is the formation of disordered sixfold-coordinated centers with As, which would
act as a donor (Van Esch et al. 1997).
Since the As antisite is anyway one of the most important defects acting as the
compensating donor, the excess As influences substantially the magnetic and transport
properties of (Ga,Mn)As. The increase of substrate temperature and the decrease of the As
pressure reduces the density of excess As, which result in a decrease of the lattice constant
and an increase in both the hole concentration and conductivity. Importantly, this generates
a raise of Tc (Shimizu et al. 1999), confirming the critical role of band holes in the
ferromagnetism of (Ga,Mn)As. The annealing of (Ga,Mn)As at relatively low temperatures
(~ 300 K) leads to similar results due to the evaporation of excess As (Hayashi et al. 200 1;
Potashnik et al. 200 I).
6.2. (/n,Mn)As
6.2./. n-type (/n,Mn)As
Magnetization measurements reveal that n-type (In,Mn)As layers with x = 0.046-0.18
grown at 200°C are paramagnetic. The analysis in terms of the Curie-Weiss law shows
that the interaction between the Mn ions is antiferromagnetic with the nearest-neighbor
exchange inn = -1.9 K (von Molnar et al. 1991). The effective magnetic moment ofMn is
determined as Peff (= gJS(S + 1)) = 5.49 for x = 0.046, indicating that the Mn electrons
are mostly in the high spin d 5 configuration.
Magnetotransport measurements on n-type samples show no evidence for carrier-Mn
spin interactions (Ohno et al. 1991). In particular, no magnetization-dependent anomalous
Hall effect is observed within the experimental error.
6.2.2. p-type (/n,Mn)As

p-type (In,Mn)As shows ferromagnetism at low temperatures. Magnetotransport mea-
surements of thick p-type (In,Mn)As films grown on (00 I) semi-insulating GaAs reveals
that the temperature dependence of the Hall coefficient, RH, can be expressed, as is the case
of (Ga,Mn)As, by eq. (1) (Ohno et al. 1992). Since M = XH, B = ILoH, X = C/ (T - ())
in the paramagnetic temperature region, and assuming Rs = cp one obtains the Hall coef-
ficient as,
(3)
where the Hall resistivity PH all = dRHall. Equation (3) can describe the temperature
dependence of RH of a 1.3-Jlm thick (In,Mn)As sample (x = 0.013) grown directly on
a GaAs substrate at 275°C, especially from 20 to 200 K, as shown in fig. 18. The fit carried
out by adopting the calculated value of the Curie constant (using x = 0.013 and assuming
Mn spin S = 5/2) yields Ro, c and (), which are p = 2.2 x 10 19 cm- 3 (determined from
Ro), c = 5.6, and () = 3.8 K. The sign of () demonstrates that the interaction between the
Mn spins is ferromagnetic. A ferromagnetic Mn-Mn interaction has only been observed
in p-type samples so far, proving that this interaction is induced by the presence of the
holes. Equation (1) is shown to be valid at low temperatures also, where hysteresis appears
in the field dependence of PHall, as shown in the inset to fig. 19. This points to the
presence of ferromagnetic order. By comparing the remanent magnetization determined
10.2 10.7
......... \1 V P
E ...... -:...\1 \1 \1 \1 \1 \1\1
-c 10.4 ...
--- .!--
10.9
:-..:
--
~ .........
......... I
t: 3
E
-
c
Q:l:
10-6
~ a _
RO
•••••••• _ .....
...
. . ......
/-----
.... . . . .
10. 11
CpxllJ o
10.6 10. 13
10 100 300
T (K)
Fig. 18. Temperature dependence of the Hall coefficient RH and resistivity p of a 1.3-JLrn thick film of
Inl_xMnxAs with x = 0.013. RH can be modeled over a wide range of temperatures as Ro + cPX/JLo, which
is shown by the solid line assuming C = 5.6. The susceptibility X (depicted by the dashed line) is calculated
assuming the Curie-Weiss law with x = 0.013, Mn spin S = 5/2, and the Curie-Weiss temperature 8 = 3.8 K
(Ohno et al, 1992).
0.015.... -...--,....""1"""".....- . . . - - , , - -_ _... 6
2.8 K
:l·
E
~
3.5 K
-
'tl
3
:0
0.005
0 -100
0 20 40 60 80
2 - 3
0
0 0 0 BdmT)
o 0
0.000 .....
o
----1...--.. . ---'1...--..
2 4 6 8 10
0
B (T)
Fig. 19. Magnetic field dependence of the diagonal resistivity P (open circles) and magnetization MHall (close
circles) determined from the ratio of the Hall and diagonal resistivities. MHall = PHali/CP, where C = 6.3, for
a 1.3-llm thick film ofInl_xMnxAs with x = 0.013. The solid line is a fit by the modified Brillouin function
BS(y). where S = 5/2 and y = SgIlBB/(T + To) with To = 1.5 K. The inset shows the hysteresis observed in
the Hall resistivity at 3.5 K (Ohno et al, 1992).
from the SQUID measurements at low temperatures with the temperature dependence of
the remanent part of PHalliP (PHall ~ RsM = cpM) as shown in fig. 19, one can again
evaluate the proportionality constant c as 6.3, in good agreement with c = 5.6 obtained
from the paramagnetic temperature region. This indicates that the mechanism responsible
for the anomalous Hall effect does not change between the two temperature ranges.
The magnetic field dependence of MHall (= PHalli Rs) (i.e., magnetization measured by
the anomalous Hall effect) can be expressed as a sum of ferromagnetic and paramagnetic
terms. The latter can be described by a modified Brillouin function (Gaj et a1. 1979), as
shown in fig. 19. The magnitude of saturation magnetization (the sum of the two responses
at B = 0.015 Tat T = 3.5 K) is 0.014 T,just the value expected for x = 0.013 and S = 5/2.
6.2.3. Pseudomorphic p-type (In,Mn)As

The (In,Mn)As layers grown on quasi-lattice matched buffer layer (GaSb or (AI,Ga)Sb)
films are either superparamagnetic or ferromagnetic at low temperatures depending on
the initial growth mode (Shen et a1. 1997c). They have rather high Tc (= 50 K) with
19
x ~ 0.07 and relatively low p (~2-3 X 10 cm >', determined from the Hall coefficient
at room temperature) (Slupinski et a1. 2002b). The magnetotransport properties show no
clear evidence for partial ferromagnetism, that is for the co-existence of ferromagnetism
and paramagnetism in the same films. A comparison of transport and magnetization
measurements revealed that the anomalous Hall coefficient Rs is rather proportional to p 2
than to P in the low-temperature regime (Oiwa et a1. 1999). Surprisingly, in contrast to the
case of (Ga,Mn)As and (In,Mn)As with high hole concentrations, the sign of the anomalous
Hall effect was found to be negative in (In,Mn)As films with low hole concentrations
(Munekata et a1. 1997). Such a sign reversal appears to be possible if skew-scattering by
compensating impurities dominates (Leroux-Hugon and Ghazali 1972; Chazalviel 1975;
Dorleijn 1976).
The magnetic anisotropy in (In,Mn)As has been investigated for various strains in the
film, by means of varying the lattice constant of the buffer layer (Munekata et a1. 1993). To
increase the tensile strain, (AI,Ga)Sb with high Al composition was employed, whereas to
decrease its magnitude, AI(Sb,As) was used as a buffer layer. The corresponding reduction
of the tensile strain diminishes the perpendicular magnetic anisotropy, which demonstrates
that strain is indeed responsible for the magnetic anisotropy. At the same time, no changes
in Tc are observed upon changing the strain (Fumagalli and Munekata 1996). The thickness
of the (In,Mn)As film affects also the magnitude of the magnetic anisotropy. For thick
samples there is no magnetic anisotropy due to the relaxation of the lattice mismatch,
whereas for very thin samples there is no ferromagnetic order due to the depletion of
the holes. The thick (In,Mn)As films without anisotropy exhibit long-term magnetization
relaxation at low temperatures, which suggests that a cluster-glass state is formed (Oiwa
et a1. 1999).
The magnetic properties of structures consisting of an (In,Mn)As layer grown onto an
(In,AI)As with an composition of Al '" 0.15 and an AISb buffer layer were examined by
means of the anomalous Hall effect. The weakening of hysteresis with the increase of the
intermediary (In,AI)As layer thickness was observed. This may result from a decrease of
overlap between the Mn spins in the (In,Mn)As layer and the holes accumulated at the
(In,AI)AsIAISb heterointerface (Munekata et a1. 1992).
111-V FERROMAGNETIC SEMICONDUCTORS 37
6.3. Infrared and far infrared optical conductivity

Infrared (IR) and far infrared (FIR) transmission spectra were collected between 10 and
12000 em -I for two (Ga,Mn)As samples with metallic de conductivity (Nagai et al. 200 I).
The thickness and Mn concentration of these two films were 2 ILm, x = 0.034 and 0.4 ILm,
x = 0.050, respectively. In the whole spectral region studied, the absorption coefficient
is larger for the sample with the higher Mn composition. In the absorption spectrum of
the sample with x = 0.034, a broad peak is observed around 1600 em"! (200 meV).
Most probably, this peak reflects both photo-ionization transitions between Mn impurity
states and the valence band as well as inter-valence band transitions, which have been
also observed in the IR absorption spectrum of bulk GaAs:Mn with a Mn concentration
of 4 x 10 17 cm- 3 (Chapman and Hutchinson 1967). There exists also quite a different
interpretation, which assigns the peak to the formation of polarons (Katsumoto et al. 200 I).
This peak is less visible in the sample with x = 0.050, presumably because of a greater
degree of overlap among the Mn impurity states, which leads to hole delocalization. In the
FIR region, the absorption increases monotonously with the photon energy, and no clear
Drude conductivity is observed down to 10 em -I. This behavior may reflect the influence
of quantum localization effects on the Drude conductivity as well as the coexistence of the
hopping and Drude terms in the vicinity of the MIT (Liu et al. 1993; Gaymann et al. 1996).
The dependence of the absorption coefficient on temperature and the magnetic field
in the FIR region is consistent with the corresponding behavior of the d.c. conductivity.
In particular, the optical density shows both a minimum around Te and an increase in
the magnetic field. When the absorption spectrum at Te is subtracted from the spectra
below Tc, a Drude-like absorption is obtained below 400 meV, whose magnitude increases
as temperature decreases. The Drude-like absorption and localization-induced effects are
observed also in (In,Mn)As (Hirakawa et al. 2001). A detected shift of the spectral density
towards higher energies was taken as an evidence for the double exchange spin-spin
interaction mechanisms (Hirakawa et al. 200 I). This conclusion awaits a verification by
considering the behavior of the sum rule in the case of the narrow-gap and complex valence
band structure, specific to p-type (In,Mn)As.
Theoretical simulations for the optical spectra were also been performed (Sakai et al.
200 I; Sakai and Suzuki 200 I).
6.4. Cyclotron resonance

Magneto-transmission spectra of GaAs:Mn with Mn a concentration of '" 9 x 10 17 cm- 3
grown by MBE were taken at several temperatures in magnetic fields up to 110 T by
the use of a FIR laser line of 119 ILm (10.4 meV) and 70.5 ILm (17.6 meV) (Matsuda
et al. 1998). It was found that the carrier mobility is too low above 270 K to observe
the cyclotron resonance (CR) and that carrier freeze-out occurs below 140 K. In the
intermediate temperature region a CR peak was observed in '" 40 T at 119 ILm. The
mobility determined from the CR linewidth at 220 K is 780 cm 2/Vs. The cyclotron mass
is 0.42mo and r - 0.47mo at 119ILm and 70.5 ILm, respectively.
'"v
On the other hand, 150-nm thick (Ga,Mn)As with x = 0.053 (Te = 88 K) shows no CR
up to 150 T at 119 ILm, which may result from too a low mobility value. In the investigated
temperature range from 20 to 150 K, the transmission decreases with the magnetic field,
38 F. MATSUKURA et al,
this behavior being consistent with a negative magnetoresistance observed in such samples.
The spin origin of the effect is corroborated by the fact that the magnetic field at which the
transmission ceases to change corresponds with to the saturation field of the magnetization
(Matsuda et al. 1998).
The CR of n-type (In,Mn)As layers with x = 0, 0.08, and 0.12 was observed at 5.5 J.l.m
(224 meV) and 10.6 J.l.m (117 meV). The cyclotron mass at 224 meV decreases from
0.054mo to 0.048mo for x increasing from 0 to 0.12. The conduction-band effective
mass depends also on temperature. For example, for the x = 0.08 sample, it decreases
from 0.051mo at room temperature to 0.045mo at 18 K. For l-um thick (In,Mn)As with
p""" 1019 cm'. the CR of the light-hole was detected (Matsuda et al. 2001).
7. Magneto-optical properties
Magneto-optical properties of (In,Mn)As and (Ga,Mn)As have been studied in order to

elucidate the origin of ferromagnetism as well as to explore the possibility of using
these materials as Faraday isolators, suitable for monolithic integration with the existing
semiconductor lasers.
The absorption edge of (Ga,Mn)As is not sharp, as shown in fig. 20 (Kuroiwa et al.
1998; Szczytko et al. 1999b). This is probably due to impurity band formation caused by
the high concentration of ionized Mn and compensating donors (Kuroiwa et al. 1998).
Even below the fundamental absorption edge, the absorption coefficient is rather large
due to free-carrier (Casey et al. 1975) and intra-Mn absorption. There is no report on the
observation of exciton states or photoluminescence, which is probably due to non-radiative
recombination, carrier screening, and the formation of an impurity band (Ando et al. 1999).
- - (Ga,Mn)As, x = 0.043
- - - LT-GaAs
<Ll
o
c
ro
~
E
(/)
c
.-~
1.3 1.4 1.5 1.6 1.7
Energy (eV)
Fig. 20. Optical transmission spectra of 2-llm thick films of Ga J -x Mnx As with x = 0.043 and low-temperature
grown GaAs at - 10 K (Kuroiwa et al, 1998).
7.1. Faraday rotation

Figure 21a shows Faraday rotation spectra of (Ga,Mn)As (2 J-Lm, x = 0.043) at 10 and
300 K in the vicinity of the band gap energy (Kuroiwa et al. 1998). Compared to GaAs,
the magnitude of the Faraday rotation in (Ga,Mn)As is very large and proportional to
magnetization, as shown in fig. 21b. The observed value of the Faraday rotation is 6 x
104 0 fcm in 0.1 Tat 10 K, and the room temperature Verdet constant is 9 x 10- 2 0 fG cm.
Oscillations seen in the low-energy region at 10 K are caused by interference originating
from internal multiple reflections.
The Faraday rotation angle eF can be expressed as,
Ed an
eF~ --!:lE (4)
2hc aE '
where E is the photon energy, c is the light velocity, n is the refractive index, and !:lE is
the energy difference of the transitions for the two circular light polarizations. The value
15 (a) (Ga,Mn)As
=
x 0.043
.- 10 6T
~
"C
-~ 5
300 K
o
1.4 1.6 1.8
Energy (eV)
15 . ~:::A:=&=t5=~
r--..,..-...... {I'J~~~
10 ~ (b)
(Ga,Mn)As 300K
.- 5 ~ x= 0.043 1.49 eV
C>
I
- o e;..,:,..,:,..,:,..,;,,"-,-._
Q)
"C __-tJ-e-~-t~!t"_.-D:-.H~_B~
~
-5 ~
-10 K _ _ (.J-magnetization
-10 ~ 1.55 eV _ ~. (from transport)
,; .
-3 0 3 6
B (T)
Fig. 21. Faraday rotation for a 2-JLm thick film of Gal_xMnxAs with x = 0.043 measured as a function of
the photon energy in a magnetic field of 6 T at - 10 and 300 K (a) and as a function of the magnetic field at
- 10K, 1.55 eV and at 300 K. 1.49 eV (b). Solid lines show the magnetization determined from magnetotransport
measurements at the given temperatures (scaled to match the open symbols) (Kuroiwa et al. 1998).
of !:i.E inferred from eq. (4), using experimentally determined anjaE, is about 35 meV,
fairly independent of E between 1.25 and 1.6 eV. If one uses !:i.E = (Nof3 - Noa)x(Sz),
which is valid only at the band edge, then (Nof3 - Noa) ~ 1 eV is obtained. Here Noa
is the exchange integral for the conduction band, and (Sz) the thermal average of the Mn
spins in the direction of B, determined by an independent magnetization measurement. The
positive value of (Nof3 - Noa) reflects the positive sense of the Faraday rotation, which is
opposite to that of II-VI DMSs like undoped (Cd,Mn)Te. This surprising result is explained
if a large Burstein-Moss shift due to the high hole concentration specific to III-V DMS is
taken into consideration (Szczytko et al. 1999b; Dietl et al. 200 lc).
The magnetic field dependence of the Kerr-rotation in (Ga,Mn)As at low-temperature
shows clear hysteresis reflecting the ferromagnetic order (Sadowski et al. 200Id). A study
on reflectivity and polar Kerr-rotation of thin (In,Mn)As films grown on (Al,Ga)Sb buffer
layers showed that the squareness (the ratio of the Kerr-rotation angle at remanence to that
at saturation) can be as high as 100% (Fumagalli and Munekata 1996).
7.2. Magnetic circular dichroism (MeD)

Magnetic circular dichroism (MCD) is caused by the difference in the magnitude of photon
absorption for left-polarized (0"-) and right-polarized (0"+) light,
(5)
where a+ (T+) and a- (T-) are the absorption (transmission) coefficients for right and
left circularly polarized light, respectively. The incorporation of Mn enhances the MCD
signal at optical critical points as shown in fig. 22 (Ando et al. 1998). According to MCD
Eo GaAs (x10) x= 0
(a)
E, E , +/l 1
(Ga 1• xMn)As
x = 0.005
0
0
~
(c)
5K
1T
0 2 4
E (eV)
Fig. 22. Magnetic circular dichroism (MeD) spectra of (a) undoped semi-insulating GaAs substrate and (b), (c)
of epitaxial Gal_xMnxAs films at T = 55 K and B = I T. The spectrum ofGaAs is magnified ten times because
the signal is weaker than that of Ga I-x Mn, As (Ando et al. 1998).
studies of (Ga,Mn)As in the reflectivity mode near the Eo critical point, the splitting of the
valence band points to a negative Nof3 value, similarly to the case of II-VI DMS. On the
other hand, a positive value of MCD deduced from absorption measurements appears to
suggest that Nof3 is positive (Szczytko et at. 1996; Shimizu et aI. 1998; Beschoten et at.
1999). As already mentioned, a larger absorption coefficient for the left light polarization
can be reconciled with the negative value of Nof3 by taking into account the Moss-Burstein
shift (Szczytko et at. 1999b; Dietl et at. 200lc). This mechanism operates also on the
insulator side of the MIT, that is in the case of samples with small Mn concentrations,
provided that the intra-center correlation energy U of Mn acceptors is smaller than the
Fermi energy in the impurity band.
In addition to the positive MCD, a negative contribution of magnitude that increases
with decreasing temperature, was observed in ferromagnetic (Ga,Mn)As (Beschoten et at.
1999). This peculiar temperature dependence can be explained in the framework of the
standard model of interband transitions in doped DMS. It results from a non-linear
dependence of MCD on magnetization at the Moss-Burstein edge (Dietl et at. 2001c). In
order to describe the experimental data more quantitatively, a model taking into account the
effect of disorder on the transition probability was also proposed (Szczytko et a1. 200lb).
8. Origin of ferromagnetism
Despite a considerable effort aiming at elucidating the nature of ferromagnetism in

III-V magnetic semiconductors, the form of the relevant minimal Hamiltonian and its
universality for all III-V compounds are still under an active debate. Such a situation
reflects the multifaceted environment, in which the ferromagnetism appears. Indeed,
conceptual and technical difficulties inherent to theory of strongly correlated and
disordered transition metal compounds are combined - in III-V magnetic semiconductors
- with the intricate physics of Anderson-Mott localization that is specific to heavily doped
semiconductors. Moreover, low-temperature epitaxy, by which most of the materials is
obtained, results in a large concentration of native defects such as antisites, which act
as compensating donors. Another possible source of local bond reconstructions is the
mechanism of self-compensation, occurring in heavily doped semiconductors once the
Fermi level reaches the energy triggering defect reactions. Structural faults may form
with neighbor transition metal impurities defect complexes exhibiting hitherto unexplored
magnetic characteristics. At the same time, strong compensation by donor-like defects
enhances the electrostatic disorder substantially, leading to deep and long-range potential
fluctuations that result in significant band tailing.
In this section, we first discuss predictions of ab initio computations in comparison
to photoemission and x-ray magnetic-circular dichroism data, discussed already in
the previous sections. Theoretical models employing parameterized Hamiltonians are
presented next emphasizing their successes and shortcomings in the description of
magnetic phenomena.
8. J. First-principles studies
Ab initio computations of the band structure in zinc-blende ferromagnetic semiconductors
were initiated by Shirai et at. (1998), who employed the full potential augmented plane
wave (FLAPW) method within the local-spin density approximation (LSDA) for MnAs
and for a supercell structure of Gal-xMnxAs with x = 1/2. The total energy calculation
demonstrated that the ferromagnetic ground state has indeed lower energy comparing
to competing magnetic states and led to the correct value of the lattice constant. This
points to the usefulness of LDSA for the determination of the ground state properties
of the compounds in question. Later. the same group (Ogawa et al. 1999) adopted the
linear muffin-tin orbital (LMTO) atomic sphere approximation (ASA) and essentially
reproduced the results for x = I as well as extended the previous computations to ordered
alloys with x = 1/8 and 1/4. It has been noted that the band structure is half-metallic
for the ferromagnetic state, i.e., the Fermi level lies in-between the densities of states
corresponding to the majority spin-down and minority spin-up states. Furthermore, owing
to the p-d hybridization there appears a magnetic moment on the As sites. The As and Mn
moments are antiparallel. which confirms that the coupling between the carriers residing
on the anion orbitals and the Mn spins is antiferromagnetic, Nof3 < O. At the same time.
the magnetic moment within the Mn muffin-tin radius is reduced to about 4/LB. This may
suggest that the Mn ion is in d4 state, i.e., that the holes have largely d-like character. This
is not the case. however. according to the population analysis carried out by Sanvito et al.
(2000. who employed the linear combination of atomic orbitals (LeAO) within LSDA for
ab initio studies ofGat-xMnxAs. The results of Sanvito et al. (2001) imply that the charge
accumulated on the Mn d-shell is about 5.5 in the electron charge units. This demonstrates
that a transfer of electrons from the 3d Mn shell to sp bonds is actually outweighed by a
transfer in the opposite sense. resulting in a partial occupation of the 3d6-like state and a
corresponding reduction of the Mn magnetic moment.
The supercell sizes adopted by Sanvito et al. (200 I) corresponded to a wide range of
Mn concentrations in Gal-xMnxAs. for which Nof3 was evaluated. A surprising result is
that the apparent value of the p-d exchange energy Nof3* , determined from the computed
spin splitting of the valence band at the r point of the Brillouin zone, increases from
-5.5 eV for x = 0.06 to -8.2 eV for x = 0.02. This dependence Sanvito et al. (2001)
interpret in terms of the model put forward by Benoit a la Guillaume et al. (1992). who
considered the case of strong and attractive "chemical" and exchange potentials introduced
by the Mn atoms in II-VI DMS. It has been found that since in such a case the hole
wave function tends to concentrate around the Mn ions. the virtual-crystal and molecular-
field approximations cease to be valid. As a result, a bowing of the energy gap and
an enhancement of the spin splitting is expected, particularly in the range of small Mn
concentrations x. In an extreme case, the Mn can localize a hole, like Cu ions in under-
doped cuprate superconductors (Zhang and Rice 1988). By fitting the computed valence-
band splitting to the model of Benoit a la Guillaume et al. (1992). Sanvito et al. (200 I).
evaluated the bare value of the exchange energy Nof3 = -4.5 ± 0.3 eV and the "chemical"
(spin-independent) part of the total Mn potential to be close to zero. For these parameters,
the holes are not yet localized in the Zhang-Rice states but certainly the local potential
will significantly contribute to the binding energy of the Mn acceptor state. As discussed
in section 4. the experimental values of INof31 are smaller, Nof3 ~ -1 e V.
More recently. Zhao et al. (2001a) employed the FLAPW method within the generalized
gradient approximation (GGA) to investigate further electronic and magnetic properties
of ordered Gal-xMnxAs alloys with low and high Mn concentrations, 0.031 ~ x ~ 0.5.
The determined Mn moment in the muffin tin (MT) sphere at given x was found to be
in a good agreement with the results of Ogawa et al. (1999). This indicates that LSDA
and GGA agree with each other very well in the description of magnetic properties for a
given Gal-xMnxAs structure. At the same time, the occupancy analysis indicates that the
charge accumulated on the d-shell in the MT sphere is 5.2, again greater than 5, although
slightly smaller than that obtained by Sanvito et al. (2001), as quoted above. Furthermore,
the difference in total energies of antiferromagnetic and ferromagnetic ground states,
normalized to one Mn atom, was found to increase from 0.12 eV for x = 0.0625 to 0.24 eV
for x = 0.5. This confirms that enlargement of Mn content in III-V compounds might
constitute a road towards higher Curie temperatures Tc:
The question about the performance of other transition metals in synthesizing functional
ferromagnetic III-V semiconductors was addressed by Shirai (200 1), who extended
FLAPW computation within LSDA to zinc blende arsenides, MAs, where M = Ti, V,
Cr, Mn, Fe, Co and Ni. It was found that the ferromagnetic order is more stable than the
antiferromagnetic state for VAs, CrAs, and MnAs, the greatest energy gain being predicted
for CrAs. Another interesting question concerns ground state properties of hosts other than
GaAs. Kato and Katayama-Yoshida (1999) carried out first principles studies of ordered
Gao.75MnO.25N, Gao.75MnO.25NO.7500.25, and Gao.75Feo.25N alloys within the LAPW-
LSDA scheme. The hole-mediated ferromagnetic ordering is favored in (Ga,Mn)N, as
confirmed in the later work by Sato and Katayama-Yoshida (2001c), but for the remaining
two alloys, in which there are no carriers, an antiferromagnetic ground state is predicted.
Ordered alloys of Gal-xMnxN with several Mn concentrations were studied by Kulatov
et al. (2001) employing the tight binding LMTO-ASA-LSDA approach. The Mn 3d band
was found to reside inside the band gap and to hybridize rather weakly with the band
states. Nevertheless, the ground state appears to be ferromagnetic, and its stability -
in contradiction to results of Kato and Katayama-Yoshida (1999) mentioned above -
increases with n-type doping but decreases with p-type doping.
The first principles studies referred to above have stimulated interesting discussions
about the accuracy of the adopted approximations. In particular, a question arises to what
extend supercell models as well as the LSD and scalar-relativistic approximations are
valid in the case of magnetic alloys in question. Akai (1998), by using the Korringa-
Kohn-Rostoker (KKR) within LSDA approximation and describing chemical disorder in
the cation sublattice by the coherent-potential approximation (CPA), obtained information
about the ground state energy ofthe random Inl-xMnxAs alloy with x = 0.06. Again, the
ferromagnetic phase was found to have lower energy than the local-moment disordered
state. Similarly to the results of the supercell LSDA calculations discussed above, the
ferromagnetic state is half metallic, and the states near the Fermi energy contain a
d-like component. On this ground, Akai (1998) assigns the ferromagnetism to the double
exchange mechanism (Zener 1951b). Another important aspect of Akai's work is the direct
demonstration that ferromagnetism is unstable once holes introduced by the Mn acceptors
become compensated by electrons originating from As antisites or Sn donors. Here, as in
most magnetic materials, antiferromagnetic superexchange dominates in the absence of
the carriers. Surprisingly, however, the Mn magnetic moment increases only slightly as a
function of compensation, from 4.2 to 4.3J.LB. This appears to constitute an additional hint
that the holes reside rather on p than on d shells.
A destructive influence of antisites on the ferromagnetic phase in ordered GaJ-xMnxAs

alloys has been demonstrated also by Sanvito and Hill (200 I). In another work devoted
to effects of disorder, Schulthess and Butler (2001) compare results for a GaJ-xMnxAs
supercell, x = 0.0625, computed employing the Vienna ab initio simulation package
(VASP), with the outcome of CPA computations for an equivalent random alloy with
x = 0.05. According to the VASPdata, the difference in total energies of antiferromagnetic
and ferromagnetic ground states, normalized to one Mn atom, is !:i.E = 0.076 eV. For
unspecified reason, this stability energy is appreciably smaller than the values of 0.15 and
0.12 eV determined for the same Mn content by Sanvito and Hill (2001) and Zhao et al.
(2oo1a), respectively. According to the CPA results, the disorder does not qualitatively
affect the density of states but reduces !:i.E to 0.045 eV (Schulthess and Butler 2001).
Exchange energies of various molecular clusters of Cr, Mn, and Fe embedded in zinc
blende GaAs, GaN, and AIN have been computed within the LSDA by van Schlifgaarde
and Mryasov (2001). According to this work, magnetic energy leads to a strong short-range
attractive force between the magnetic dopants but whether the corresponding clustering is
kinetically allowed at growth temperatures has not been assessed.
In all works referred to above LSDA or GGA have been employed. These approxima-
tions are known (Kotani 2000) to underestimate the on-site correlation effects for 3d elec-
trons in non-metallic solids. This means, according to the Anderson model of magnetic
impurities, that magnitudes of p-d hybridization and related interactions will be overes-
timated. For instance, the values of Neel temperatures in zinc blende Mn chalcogenides,
evaluated within LSDA (Wei and Zunger 1993), are about two times larger than those de-
termined experimentally. This discrepancy is removed in a computation scheme, known as
LSDA+U, in which an external parametric potential is added, whose role is to displace the
d band, hence change the p-d coupling (Wei and Zunger 1993). Figure 23 compares the
partial density-of-states (DOS) for Mn d-electrons in an ordered Gal_xMnxAs alloy with
x = 0.0625 computed by Park et al. (2000) within LMTO-LSDA and LMTO-LSDA+U,
respectively. In agreement with the Parmenter (1973) model, the parametric potential is
characterized by two adjustable parameters, the correlation energy U and Hund's intra-site
exchange energy J. As expected, DOS from the LSDA+U model is sharper and located
further off the Fermi energy than the LSDA d bands. Another interesting aspect of the
theoretical results (Park et aI. 2000) is the observation that the coupling of two Mn spins
changes from ferromagnetic to antiferromagnetic when the distance between the pair in-
creases, a behavior reminiscent of the Ruderman-Kittel-Kasuya-Yosida oscillations. It
would be interesting to check the stability of the ferromagnetic phase and the magnitude
ofNof3 within the LSDA+U model.
It is tempting to compare the computed DOS with photoemission spectra. Certainly,
DOS obtained within the LSDA+U model agrees better with photoemission results
(Okabayashi et al. 1998,1999, 2001a, 2001b), though a direct comparison is hampered by
the influence of electron-hole correlation and multiplet effects on the form of excitation
spectra (Mizokawa and Fujimori 1993). According to the LSDA+U model, the Mn
occupancy increases to 5.4, and the participation of d states in the wave function of holes
near the Fermi energy is reduced compared to the LSDA results (Park et al. 2000). The
occupation number in excess of 5 is directly corroborated by x-ray magnetic circular
dichroism (XMCD) studies (Ohldag et al. 2000; Ueda et aI. 2001), and also, in a model
III- V FERROMAGNETIC SEMICONDUCTORS 45
---
>Q) 4 - - -LSDA
en --LSDA+U
Q)
+-'
ro
--
1i> 2 ,
\
", ,~ l1
en
Q)
+-'
ro J
J "
, I ",", I ,
"" ," .
0
-
1i>
0
>- -2
+-'
'00
c
Q)
0 -4
-8 -4 o 4 8
Energy (eV)
Fig. 23. The spin polarized Mn 3d partial density of states of Gao.93SMno.063As from the LSDA and the
LSDA+U (Park et al. 2(00).
dependent way, by photoemission experiments of Okabayashi et al. (1998, 1999), which

lead to the value 5.3 ± 0.1, as discussed in section 4. At the same time, the local magnetic
moment, which amounts 4.1J1.B in LSDA, increases to 4.4J1.B in LSDA+U (Park et al.
2(00). The latter compares favorably with the value 4.6J1.B determined by fitting XMCD
spectra (Ohldag et al. 2(00). According to results presented in section 5, the saturation
values of the magnetization point to a magnitude of the magnetic moment between 4 and
5J1.B, its more accurate determination being precluded by difficulties in the evaluation of
the Mn content x.
8.2. Parameterized Hamiltonians

Experimental and theoretical results presented in the previous sections make it possible to
sketch a picture of interplay between electronic and magnetic properties in (Ga,Mn)As.
This magnetic semiconductor can be classified as a charge transfer insulator, in which the
high spin state, S = 5/2, is stabilized by positive values of energies required to transfer an
electron either from the Mn 3d shell to the Fermi level or vice versa. Since Mn atoms
are divalent in the S = 5/2 configuration, they act as effective mass acceptors when
they substitute for trivalent Ga. The corresponding energy level should not be confused
with the Mn 3d shells. At the same time, it is important to realize that the quasi-atomic
Woodbury-Ludwig description of magnetic d orbitals is by no means valid in the case
of doping by 3d transition metals. Actually, the position and origin of both band and
3d-like local states are determined - to a large extend - by their strong hybridization
(Zunger 1986). In particular, the hybridization accounts for a large splitting between tZg
and eg components. Moreover, it leads to an admixture of the d 6 configuration to the
wave function of the occupied states visible in XMCD and x-ray photoemission spectra
(XPS), as discussed above. Furthermore, the p-d interaction tends to renormalize the
energy of anion p-type orbitals adjacent to Mn atoms. This will contribute to the "chemical
shift" of Mn acceptors ionization energy in GaAs:Mn, and to the valence band off-set in
(Ga.Mn)As. Importantly. a part of the p-d interaction is spin-dependent. which according
to the Schrieffer-Wolf transformation, leads to a Kondo-like coupling between effective
mass carriers and localized spins (Kacman 200 1).
In view of the above discussion. the one-carrier effective mass Hamiltonian describing
the interaction with a Mn atom located at R, assumes the form,
(6)
where Ho(p) is the k . p Hamiltonian for the crystal structure in question, Vc and v:~
describe the Coulomb and short-range "chemical" part of the potential introduced by the
Mn ion, respectively. and I is the short-range exchange operator. It appears that as long as
magnetic ion occupies the tetrahedral position (so that there is no. e.g. static Jahn-Teller
distortion), the Kondo form of the spin dependent interaction is valid even for magnetic
ions with non-zero orbital momentum (Kacman 200 1). However. the orbital momentum.
and the associated spin-orbit interaction will affect the relation between magnetization M
and expectation value of spin operator S. At the same time. in order to describe correctly
the influence of the exchange interaction on the effective mass states, it is essential to take
the spin-orbit interaction into account in the k . p Hamiltonian Ho(p).
It is convenient to replace. in the spirit of the Kohn-Luttinger effective mass theory
for the valence subbands, short range potentials by appropriate matrix elements Wand fJ
according to W = (XlVsIX) and fJ = (XllIX). where X denotes a py-like component
of the Bloch wave functions for the rg point of the Brillouin zone. The parameter
fJ is the familiar exchange integral. whereas W describes the valence band off set
disregarding long-range Coulomb effects. Such a parameterized Hamiltonian (6) and its
variants constitute a starting point for a number of ferromagnetism models, which will be
outlined in this section. First. however, available information on the values of Wand fJ is
summarized.
As already mentioned. theoretical results of Sanvito et aI. (200 I) lead to NofJ ~ -4.5 eV
and W close to zero. Experimental sources of information on fJ and W are parameters
serving to describe photoemission and XMCD results. Both XPS (Okabayashi et al. 1998).
and resonant photoemission spectra (Okabayashi et al. 1999) can be described with the
same set of charge transfer energies in the cluster model (Mizokawa and Fujimori 1993).
which result in NofJ = -1.2 ±0.2 eV for Gal-xMnxAs with x = 0.074 (Okabayashi et al.
1998). At the same time. the values of the transfer energies inserted into the formula of Hass
(1991) imply that the contribution of the p-d interaction to INoW I is below leV. However.
the application of the model of Mizokawa and Fujimori (1993) to XMCD data leads to
somewhat different values of the charge transfer energies. from which NofJ ~ -0.34 eV
and Wpd > 0 in Gal-xMnxAs with x = 0.025 (Ueda et al. 2001).
Bhattacharjee and Benoit a la Guillaume (2000) adopted the Hamiltonian (6) in order
to describe experimental values of spin-flip and ionization energies of holes localized on
Mn acceptors in the case of weak doping. x < 0.1 %. Their results, obtained by employing
the Baldereschi-Lipari effective mass theory, lead to NoP ~ -0.9 eY. However, for the
assumed shape of the acceptor wave function, the magnitude of INoPI would, presumably,
be about two times smaller when taking a more recent value of the spin flip energy, as
determined by Sapega et aI. (2000, 2001). According to Bhattacharjee and Benoit a la
Guillaume (2000), a positive value of No W having a magnitude larger than INoP I is
necessary in order to explain the "chemical shift" of the Mn acceptor. The positive sign
of W is consistent with the existence of a barrier for the hole injection from (Ga,Mn)As
to GaAs in p-i-n diodes (Arata et aI. 2001). It has been concluded, by comparing
results for three kinds of p-i heterojunctions: (Ga,Mn)AslGaAs, GaAs:Be/GaAs, and
GaAs:Be/(Al,Ga)As that the barrier height in (Ga,Mn)AslGaAs is too large to be entirely
assigned to band gap narrowing by many body effects within the carrier liquid. A barrier
height of 100 meV for x = 0.05, would imply NoW = 2 eV in the virtual crystal
approximation. Such a band off-set is consistent with a reduction of the energy gap in
(Ga,Mn)As comparing to GaAs, noted by Dietl et al. (2oo1c) and Szczytko et al. (2oo1b)
when analyzing optical transmission data of Szczytko et al. (1999b) and Beschoten et al.
(1999). Importantly, assuming a value of NoP = -1.2 eV, a consistent account of the
MCD spectra of Beschoten et al. (1999) is possible within the k . P model of the valence
band (Dietl et aI. 2oo1c). More recently, Szczytko et aI. (2oo1b) by taking the effect of
disorder on selection rules into account obtained an accurate description of their magneto-
transmission results (Szczytko et al. 1999b) with NoP = -1.0 eV. Finally, we recall
that a description of the temperature and field dependence of the resistance in terms of
spin-disorder scattering yielded INoPI of 1.5 ± 0.2 eV (Omiya et al. 2(00), assuming a
simple structure of the valence band and neglecting the q-dependence of the magnetic
susceptibility.
The body of findings presented above demonstrates that owing to the p-d hybridization
there exists an antiferromagnetic coupling between the hole and Mn spins in (Ga,Mn)As.
If described in terms of the Kondo Hamiltonian, the magnitude of the corresponding
exchange energy is, presumably, of the order of -I eV, NoP ~ -1.0 eV. Furthermore, in
the GaAs/(Ga,Mn)As heterojunction, the valence band edge of (Ga,Mn)As resides higher
than in GaAs, No W > 0, so that the potential Vs in eq. (6) is attractive for the holes.
However, to what extent this band offset is controlled by the p-d hybridization and what is
its exact magnitude is unknown at present.
8.3. Hole states and hole mediated exchange interactions

It is now well established that in the absence of free carriers the dominant exchange
mechanism is the superexchange in zinc blende magnetic semiconductors. This mechanism
leads to antiferromagnetic interactions, except perhaps for some Cr-based compounds,
for which a ferromagnetic coupling is theoretically predicted (Blinowski et al. 1996).
Remarkably, owing to the large exchange energy INoPI and the high density of states,
the hole-mediated ferromagnetic exchange interaction can overcome antiferromagnetic
superexchange (Dietl et ai. 1997). Indeed, as already emphasized, the presence of holes
is essential for the existence of the ferromagnetic order in Mn-based semiconductors.
The case of III-V magnetic semiconductors is particularly fortunate as Mn atoms act as
acceptors. It should be recalled at this point that electronic states in doped semiconductors
undergo dramatic changes as a function of the impurity concentration (Belitz and
Kirkpatrick 1994; Edwards and Rao 1995). Hence, the hole states, and possibly hole-
mediated exchange mechanisms, maya priori undergo dramatic changes as function of
the Mn content x and the concentration of compensating donors, ND in III-V magnetic
semiconductors.
The evolution of electronic states in doped semiconductors is governed by the ratio
of the average distance between the carriers 'c to the effective impurity Bohr radius aB,
determined by both Coulomb and short-range potentials of eq. (6). In the case of the holes
in (Ga,Mn)As, r c = (3j4rrp) 1/3, p = x N« - ND, and aB ~ 0.78 nm (Bhatt and Berciu
2(01). In the range of small impurity concentrations, 'c »aB, the holes are tightly bound
to acceptors. Hence, the conductivity vanishes in the limit of zero temperature. At non-zero
temperatures, the charge transport proceeds either via phonon-assisted hopping between
occupied and empty acceptors or by means of thermal activation from the acceptor levels
to the valence band. In a pioneering work Pashitskii and Ryabchenko (1979) evaluated
the strength of exchange interactions between localized spins mediated by band carriers
thermally activated from impurity levels. More recently, Wolff et al. (1996) considered
carriers localized on impurities and forming bound magnetic polarons (BMP). It was
found that there exists a range of parameters, in which the coupling between the BMP
is ferromagnetic. This idea was further explored by Bhatt and Wan (1999), who examined
by Monte Carlo simulations properties of a ferromagnetic phase transition driven by the
interactions between BMP.
Two other groups noted that a long-range exchange interaction between Mn spins can
be mediated by holes undergoing quantum hoping from the Mn-derived impurity states to
the extended valence band states. Inoue et al. (2000) adopted the Slater-Koster approach,
well known in the physics of resonant states, for the case of two magnetic impurities. It has
been found, by a model calculation, that the pairs of Mn spins coupled to the valence band
states have a lower energy in the ferromagnetic than in the antiferromagnetic configuration.
Litvinov and Dugajev (2001) suggested than the ferromagnetic spin-spin interaction
can originate from virtual excitations between the acceptor-like impurity level and the
valence band, a variant of the Bloembergen-Rowland indirect exchange mechanism. They
evaluated Curie temperatures by using a formula, derived originally for excitations between
valence and conduction bands, without proving its correctness for the case in question.
With the increase of the net acceptor concentration, the impurity band merges with the
valence band. For r; «aB, the holes reside in the band, and their quasi-free propagation is
only occasionally perturbed by scattering of Mn (eq. (6» and other defect potentials, whose
long-range Coulomb part is screened by the carrier liquid. Here, the celebrated Ruderman-
Kittel-Kasuya-Yosida (RKKY) mechanism, driven by intraband virtual excitations, is
expected to dominate. In the context of III-V magnetic semiconductors, this mechanism
was discussed by Gummich and da Cunha Lima (1990) and Matsukura et al. (I 998b). At
the same time, Dietl et al. (1997) demonstrated the equivalence of the RKKY and Zener
(l951a, 1951c) models, at least on the level of the mean-field and continuous medium
approximations. However, with no doubts, beyond those approximations such equivalence
can be questioned (Semenov and Stepanovich 200 I).
Within the Zener approach, and its nuclear spin variant (Frohlich and Nabarro 1940),
the degree of spin ordering, Mq , at given temperature T is found by minimizing the total
free energy of the spin and carrier subsystems, F[Mq ]. Here M q denotes the Fourier
components of localized spin magnetization M(r), so that the minimum of F[Mq ] for
M q=O # 0 implies the ferromagnetic order. In general, however, other ground states,
such as non-collinear structures or spin-density waves, described by M q",O have to be
considered (Dietl et al. 1999). This is a rather versatile scheme, to which carrier correlation
and confinement (Dietl et al. 1997,1999; Haury et al. 1997; Jungwirth et al. 1999; Lee et al.
2000; Fernandez-Rossler and Sham 2001), k- P and spin-orbit couplings (Dietl et al. 2000,
2oo1c; Abolfath et al. 2001; Femandez-Rossier and Sham 2001) as well as disorder and
antiferromagnetic interactions (Dietl et al. 1997; Kossacki et al. 2000) can be introduced
in a controlled way, and within which a quantitative comparison of experimental and
theoretical results is possible (Dietl et al. 2oo1a, 2oo1c; Ferrand et al. 2001).
In view of the above discussion the question arises whether the hole-mediated
ferromagnetism appears in the insulator or in the metallic phase. It is well established
that the metal-insulator transition (MIT) occurs at re ~ 2.4aB in doped non-magnetic
semiconductors (Edwards and Sienko 1978). According to this criterion one gets the
critical hole concentration Pc = 4 X 10 19 cm- 3 for aB = 0.78 nm. Experimentally, the
MIT occurs at about 3.5% of Mn in (Ga,Mn)As, i.e., for Nox = 7 x 1020 cm- 3 (Oiwa
et al. 1997; Matsukura et al. 1998b; Katsumoto et al. 1998). A large difference between
these two values is presumably caused by the compensation (discussed above) as well
as by the enhancement of localization by the sp-d exchange scattering (Dietl 1994). The
latter is documented in (Ga,Mn)As by the presence of negative magnetoresistance and
associated insulator-to-metal transition driven by the magnetic field (Katsumoto et al.
1998). In addition to the MIT at x ~ 0.035, the reentrant insulator phase is observed
for x > 0.06 (Matsukura et al. 1998b), as discussed in section 6. Presumably, a self-
compensation mechanism is involved but no microscopic model has been proposed so
far.
Perhaps, the most intriguing property of the materials in question is that the ferromag-
netism is observed on the both sides of MIT (Oiwa et al. 1997; Matsukura et al. 1998b).
It is, therefore, interesting to contemplate the nature of electronic states in the vicinity of
the MIT in doped semiconductors. Obviously, the random spatial distribution of acceptor
and donor centers gives rise to strong spatial fluctuations in the carrier density and states
characteristics. According to the phenomenological two-fluid model there exist two kinds
of relevant states (Paalanen and Bhatt 1991). The first are strongly localized and thus singly
occupied states associated with the attractive potential of a single majority impurity. The
strongly localized carriers barely contribute to the conduction process. However, they pro-
duce a Curie-like component in the magnetic susceptibility and give rise to the presence
of BMP in magnetic semiconductors. Obviously, the impurity-like states dominate deeply
in the insulating phase but their presence is noticeable also in the metallic phase (Paalanen
and Bhatt 1991; Glod et al. 1994). The second pool of states determines the conductivity, so
that properties of these states are described by the scaling theory of MIT. Accordingly, the
corresponding localization radius ~ is rather controlled by interference of multi-scattering
processes than by the attractive potential of a single impurity. Thus, ~ of these weakly lo-
calized states is significantly larger than aB, and diverges on approaching the MIT from
the insulator side. It is worth noting that such a two-fluid model is consistent with a.c. con-
ductivity studies (Nagai et al. 2001), which show the coexistence of weakly and strongly
localized states near the MIT in (Ga,Mn)As. Furthermore, the merging of impurity and
band states in this range is substantiated by angle-resolved photoemission spectra in the

same system (Okabayashi et al. 2001a, 2oolb).
In order to tell the dominant mechanism accounting for the existence of long-range
spin order in ferromagnetic semiconductors it is instructive to trace the evolution of their
magnetic properties on crossing the MIT. Remarkably, in contrast to rather strong changes
of resistivity, the evolution of magnetic properties is gradual. This substantiates the notion
that thermodynamic properties do not exhibit any critical behavior at MIT as they are
insensitive to large-scale characteristics of the wave functions. Importantly, the values
of the Curie temperature are found to grow with the degree of the material metallicity
(Matsukura et al. 1998b; Katsumoto et al. 200 1; Potashnik et al. 200 1). Moreover,
the examination of the magnetization as a function of temperature and magnetic field
indicates that virtually all Mn spins contribute to ferromagnetic order in the most metallic
samples (Oiwa et al. 1997; Matsukura et a1. 1998b; Potashnik et al. 2(01). However,
on crossing the MIT (by lowering x), the relative concentration of ferromagnetic ally
coupled spins decreases substantially. According to XMCD results of Ohldag et al.
(2000), about 10% of the Mn spins is involved in ferromagnetism of Gal-xMnxAs
with x = 2%. Also ferromagnetic resonance studies (Szczytko et al. 1999b) and direct
magnetization measurements demonstrate that only a part of the spins contribute to
spontaneous magnetization, while the alignment process of the remaining moments occurs
according to a Brillouin function for a weakly interacting spin system (Oiwa et al. 1997).
Remarkably, the anomalous Hall effect reveals clearly the presence of the first component
but hardly points to the existence of any loose spins (Matsukura et al. 1998b).
The above findings indicate that Mn spins in the regions visited by itinerant holes are
coupled ferromagnetically. These holes set long-range ferromagnetic correlations between
the Mn spins, including those contributing to BMP that are formed around singly occupied
local states. Obviously, the ferromagnetic portion of the material, and thus the magnitude of
the spontaneous magnetization, grows with the dopant concentration, attaining 100% in the
metallic phase. Such a trend is confirmed by the available data, as discussed above. Thus,
the delocalized or weakly localized holes are responsible for ferromagnetic correlation
in (Ga,Mn)As (Dietl et al. 2(00). At the same time, mechanisms that involve strongly
localized states, such as excitations from impurity levels or a direct coupling between BMP,
appear to be of lesser importance.
8.4. Mean-field Zener model and its application to (Ga,Mn)As

In this section, theoretical foundations and application of the mean-field Zener model to
III-V magnetic semiconductors are discussed in some detail. The capabilities of the model
to describe various magnetic properties of (Ga,Mn)As are presented, too. In the final part,
limitations of the model and its numerous refinements put recently forward are discussed.
As already mentioned, it is convenient to apply the Zener model (Zener 1951a, 1951c)
by introducing the Ginzburg-Landau functional F[M(r») of the free energy density (Ma
1976), where M (r) denotes local magnetization of the Mn spins. The choice of M (r) as
the order parameter means that the spins are treated as classical vectors, and that spatial
disorder inherent to magnetic alloys is neglected. In the case of magnetic semiconductors
F[M(r») consists of two terms, F[M(r») = Fs[M(r») + FclM(r»), which describe, for
a given magnetization profile M(r), the free energy densities of the Mn spins in the
absence of any carriers and of the carriers in the presence of the Mn spins, respectively
(Leroux-Hugon 1973; Dietl 1994). A visible asymmetry in the treatment of the carries
and of the spins corresponds to an adiabatic approximation, the dynamics of the spins in
the absence of the carriers being assumed to be much slower than that of the carriers.
Furthermore, in the spirit of the virtual-crystal model molecular-field approximations,
the classical continuous field M(r) controls the effect of the spins upon the carriers.
Now, the system thermodynamics is described by the partition function Z, which can be
obtained by a functional integral of the Boltzmann factor exp( - f dr F[ M (r)]/ kBT) over
all magnetization profiles. In the mean-field approximation (MFA), a term corresponding
to the minimum of F[M(r)] is assumed to determine Z with a sufficient accuracy.
If energetics is dominated by a spatially uniform magnetization M, the spin part of the
free energy density in the magnetic field H can be written in the form
(7)
Here, h(Mo) denotes the inverse function to Mo(h), where M o is the macroscopic
magnetization of the spins in the absence of carriers at a field h and temperature T. It
is usually possible to parameterize Mo(h) by the Brillouin function Bs according to
(8)
where two empirical parameters, the effective spin concentration XeffNO < xNo and the
temperature Teff > T, take the presence of the short-range superexchange antiferromag-
netic interactions into account (Gaj et al. 1979). The dependencies Xeff(X) and TAF(X) are
known for II-VI DMS compounds. However, as argued by Dietl et al. (2000, 2001c), the
antiferromagnetic short-range interaction is overcompensated by the ferromagnetic double
exchange coupling in the case of III-V DMS. According to the two fluids model intro-
duced in section 8.3, a part of the carriers is trapped on strongly localized impurity states,
and thus forms BMP. To gain the Coulomb energy, the singly occupied local states are pref-
erentially formed around close pairs of ionized acceptors. In the case of III-V materials,
one hole localized at two Mn ions generates, via Zener's (Zener 1951b) double exchange,
a strong ferromagnetic coupling that overcompensates the intrinsic antiferromagnetic in-
teraction (Blinowski et al. 1997). Accordingly, Xeff ~ x and Teff ~ T. By contrast, in II-VI
compounds in which acceptor cores do not carry any spin, and the degree of compensa-
tion is low, BMP are not preferentially formed around Mn pairs, so that the close pairs
remain antiferromagnetically aligned. The presence of a competition between the ferro-
magnetic and antiferromagnetic interactions in p-type II-VI DMS, and its absence in Mn-
based III-V materials, constitutes the important difference between those two families of
magnetic semiconductors.
It is clear from eqs (7) and (8) that Fs[M] monotonously increases with IMI, so that-
as expected - the minimum of Fs[M] corresponds to M = 0, for which the spin entropy
attains the highest value. It is convenient to introduce the spin susceptibility is related to
INoIi1 = 1.2 eV
0.0 LX~-_-~0.
r
;.;.0;.;;5_~"-~~_~ _ _--1
:>
Q)
>-
~ -0.2
Q)
c
W
-0.4
-2 -1 0 2
- - k (10 7 cm') _ _
k-LM kllM
Fig. 24. The computed valence band dispersion E(k) computed from the 6 x 6 Luttinger model for the wave
vector parallel and perpendicular to the Mn spin magnetization in (Ga,Mn)As. assuming that the spin splitting of
the heavy-hole band at the r point is 0.15 e V.
the magnetic susceptibility XO of the spins according to is = (gf..LB)2 XO. In the limit, where
Mo(T, h) = Xo(T)h,
(9)
which shows that the increase of Fs with M slows down with lowering temperature. In
contrast to Fs[Ml, owing to Zeeman splitting of the bands imposed by the sp-d exchange
interaction, the energy of the carriers, and thus Fc£Ml, decreases with IMI. Accordingly, a
minimum of F[Ml at non-zero M may develop in H = 0 at sufficiently low temperatures.
In order to take into account the complex structure of the valence band, Dietl et al.
(2000, 2oo1c) and Abolfath et al. (2001) have computed hole energies by diagonalizing
the 6 x 6 k . p Luttinger matrix together with the p-d exchange contribution taken in the
virtual crystal and molecular field approximation,
Hpd = {3sM/gf..LB. (10)
This tenn leads to spin splittings of the valence subbands, whose magnitudes - owing
to the spin-orbit coupling - depends on the hole wave vectors in a complex way
even for spatially uniform magnetization, as shown in fig. 24. It would be technically
difficult to incorporate such effects into the RKKY model, as the spin-orbit coupling
leads to non-scalar terms in the spin-spin Hamiltonian. At the same time, the indirect
exchange associated with the virtual spin excitations between the valence subbands, the
Bloembergen-Rowland mechanism (Dietl 1994; Kacman 200 1), is automatically included.
The model allows for biaxial strain (Dietl et al. 2000, 2oo1c; Abolfath et al. 2001),
confinement (Fernandez-Rossier and Sham 2001), and is developed for both zinc blende
and wurtzite materials (Dietl et al. 2000, 2oolc). Furthermore, Dietl et aI. (2oo1c) take into
consideration the direct influence of the magnetic field on the hole spectrum. The carrier-
carrier spin correlation is described by introducing a Fenni-liquid-like parameter AF,
which enlarges the Pauli susceptibility of the hole liquid (Altshuler and Aronov 1985; Dietl
et al. 1997). No disorder effects are taken into account on the grounds that their influence
on thermodynamic properties is relatively weak.
Having the hole energies, the Helmholtz free energy density FC£M] can be evaluated
according to the standard procedure for the Fermi gas. By minimizing F[M] = Fs[M] +
Fc[M] with respect to M at given T, H, and hole concentration p, one obtains M(T, H)
as a solution of the mean-field equation,
where peculiarities of the valence band structure, such as the presence of various hole
subbands, anisotropy, and spin-orbit coupling, are hidden in FC£M]. Near the Curie
temperature Tc and at H = 0, where M is small, we expect FC£M] - FC£O] ,..., M 2 • It is
convenient to parameterize this dependence by a generalized carrier spin susceptibility
Xc, which is related to the magnetic susceptibility of the carrier liquid according to
X = AF(g* ILB)2XC. In terms of Xc,
(12)
By expanding Bs(M) one arrives at the well-known form for the mean-field value of Tc
(Dietl et al. 1997; Jungwirth et al. 1999)
(13)
For a strongly degenerate carrier liquid lSFI/ kBT » 1, as well as neglecting the spin-
orbit interaction, Xc = p/4, where p is the total density-of-states for intra-band charge
excitations, which in the 3D case is given by p = mOoskF/rr2h2. In general, however, Xc
has to be determined numerically by computing FdM). Large magnitudes of both density
of states and exchange integral specific to the valence band make Tc much higher in p-type
than in n-type materials with a comparable carrier concentration.
The above reasoning can easily be generalized to the case of a phase transition to
a spatially modulated ground state, characterized by non-zero magnetization M q • The
corresponding mean-field value of the ordering temperature Tc(q) is given by the solution
of the equation (Dietl et al. 1999)
(14)
where the carrier spin susceptibility can be determined from the standard linear-response
expression,
(15)
Here uitl
), fin), and Ei tl
) are the periodic part of the Bloch function, energy and
Fermi-Dirac distribution functions for the n-th carrier spin subband. In the case of cubic
symmetry, the susceptibility tensor is isotropic, X~ij) = Xe8;j. It has been checked within
the 4 x 4 Luttinger model that the values of Tc, determined from eqs (13) and (12), which
do not involve explicitly -t: and from eqs (14) and (15) in the limit q ~ 0, are identical
(Ferrand et al. 200 1). Such a comparison demonstrates that almost 30% of the contribution
to Te originates from interband polarization, i.e. from virtual transitions between heavy
and light hole subbands.
It is possible to extend the above approach to the case of low dimensional structures
(Dietl et al. 1997, 1999; Haury et al. 1997; Lee et al. 2000; Femandez-Rossier and
Sham 200 1). If the carriers occupy one electric subband, the mean-field value of ordering
temperature Te(q) is given by the formula that generalizes eq. (13) (Dietl et al. 1999)
(16)
where qJo(~) is the envelope function of the occupied subband in the confining potential, ~
and q are vectors in the 3 - d and d dimensional space, respectively.
We now tum to the ferromagnetic phase, T < Te. Here, in addition to M(T, H),
the evaluation of FdM] makes it possible to determine the energy density of magnetic
anisotropy. K (Dietl et al. 2000. 2oo1c; Abolfath et al. 2001) as well as the hole spin
polarization P = 2gJ1.B(aFdM)/aM)/({3p) and magnetic moment Me = -aFdM]/aH
(Dietl et al. 2oolc). Another important characteristic of any ferromagnetic system is the
magnetic stiffness A. which describes the energy penalty associated with a local twisting
of the direction of magnetization. Actually, in the experimentally important case of a
uniaxial ferromagnet. the energy functional is entirely described by K u , A, and the value
of magnetization M according to,
(17)
where ii (i) is the unit vector that specifies the local Mn spin orientation. and 9 is its angle
with respect to the easy axis. The latter is controlled by biaxial strain in epilayers (Ohno
et al. 1996b; Shen et al. 1997a. 1997b, 1997c. 1997d) and by confinement in quantum wells
(Dietl et al. 1997; Haury et al. 1997). Konig et al. (2000, 2001) have developed a theory
of magnetic stiffness A in III-V ferromagnetic semiconductors. Remarkably, A determines
the magnitude and character of thermodynamic fluctuations of magnetization. the width
and energy of domain walls as well as the spectrum of spin excitations. In particular, the
quantized energies of long-wavelength spin waves are given by
(18)
It is clear from eq. (17) that A describes how the Ginzburg-Landau functional F[8Mq ]
varies with q. Here, 8Mq are the Fourier components of the difference between local and
macroscopic magnetization M(T, H). In the long-wave limit. in which eq. (17) is valid,
the magnitude of A is expected to be primarily determined by the magnetic stiffness of the

carrier subsystem, that is by Fd8Mq] and thus by X~ii)(q). Indeed, the distance between
the spins is smaller that that between the carriers, and the intrinsic spin-spin interactions
are short-range. It is seen, by comparing eqs (12) and (17), that X~ii) (q, T) for the direction
i perpendicular to M(T, H) is relevant, and its numerical evaluation from eq. (15) for a
given M(T, H) will provide A(T, H). By parametrizing X~(q) = X~(q = 0) - Cl.q2 one
gets
(19)
As long as the valence band splitting t::. = AFfJM/gJLB is much smaller than the Fermi
energy one expects the spin susceptibility, and thus C to be independent of M, and isotropic
for the cubic symmetry Cl. ~ clI' An important observation of Konig et al. (2001) is that
the magnetic stiffness computed within the 6 x 6 Luttinger model is almost by a factor of
10 greater than that expected for a simple doubly degenerate band with the heave-hole
band-edge mass. This enhancement, which stabilizes strongly the ferromagnetic order,
stems presumably from p-like symmetry of the valence band wave functions as well as
from interband q-dependent polarization.
8.5. Comparison oftheoretical and experimental results

In this section, the mean-field Zener model discussed above is employed to describe
experimental values of Curie temperature, spontaneous magnetization, anisotropy field,
and domain stripe width. Standard values of band-structure parameters, elastic constants,
and share deformation potentials of GaAs are adopted (Abolfath et aI. 2001; Dietl et al.
2oolc). The Mn spins are assumed to be in the d 5 configuration, so that S = 5/2 and
the Mn Lande factor g = 2.0. For the pod exchange energy NofJ = -1.2 eV is taken
(Okayabashi et al. 1998), which for the cation concentration of GaAs, No = 2.21 x
1022 cm- 3 , corresponds to Jpd == -fJ = 0.054 eVnm 3. The Fermi liquid parameter AF =
1.2 (Jungwirth et al. 1999) enters the enhancement of Te and of the valence band pod
exchange splitting t::. = AFfJM/(gJLB) at magnetization M of the Mn spins (Dietl et al.
200Ic).
The most interesting property of Gal-xMnxAs epilayers is the large magnitude of Te,
up to 110 K for the Mn concentration x = 5.3% (Ohno et al. 1996b; Matsukura et al.
1998b). Because of this high Te, the spin-dependent extraordinary contribution to the
Hall resistance RH persists up to 300 K, making an accurate determination of the hole
density difficult (Oiwa et al. 1997; Van Esch et aI. 1997; Matsukura et aI. 1998b; Shimizu
et al. 1999). However, the recent measurement (Omiya et al. 2000) of RH up to 27 T
and at 50 mK yielded an unambiguous value of p = 3.5 x 1020 cm- 3 for the metallic
Gao.947MnO.053As sample, in which Tc =110 K is observed (Matsukura et aI. 1998b).
The above value of p is about three times smaller than x No, confirming the importance of
compensation in Gal_xMnxAs.
As shown in fig. 25, the numerical results lead to Tc = 120 K for x = 0.05, and thus,
Tc: = 128 K for x = 0.053 and p = 3.5 x 1020 cm- 3. It seems therefore that the mean-field
Zener model, with no adjustable parameters, can explain the high values of Tc found in
S6 F. MATSUKURA et al.
Ga'_xMnxAs
x =0.05
-
Q'100
l,aNa l = 1.2 eV
AF =1.2 mOOS
.. '
..............................
10
1 .....-"'----....................."---.......-.--.......~ .......- .......................

0.01 0.1 1
20
Hole Concentration (10 ern")
Fig.2S. Curie temperature as a function of the hole concentration for Gao.9SMnO.osAs computed from the 6 x 6
Luttinger model (solid line). Straight dashed lines represent results obtained assuming large and small values
of the spin-orbit splitting !J.o , respectively. The dotted line is calculated neglecting the effect of the spin-orbit
interaction on the hole spin susceptibility (Dietl et al. 200lc).
Gal-xMnxAs. Furthermore, the scaling theory of electronic states near the MIT, discussed
in the previous sections, makes it possible to explain the presence of the ferromagnetism
on the both sides of the MIT, and a non-critical evolution of Te across the critical point
(Matsukura et a1. 1998b). A comparison between theoretical and experimental data in a
wider range of Mn and hole concentrations requires reliable information on the hole density
in particular samples, which is not presently available. In appears, however, that in the case
of both Gal-xMnxAs and Inl_xMnxAs on the insulator side of the MIT, the experimental
values of Te are systematically higher than those expected from the Zener model.
Turning to the temperature dependence of the spontaneous magnetization in the
ferromagnetic phase one should note that the total magnetic moment consists of spin and
hole contributions. The hole part was found (Dietl et a1. 2oo1c) to be negative and to attain
only a few percent of the total magnetization values, as the hole polarization is incomplete,
the hole concentration is smaller than that of the spins, and because of a partial cancellation
between the Pauli and Landau terms. If the hole liquid is only partially spin polarized (i.e.
161 < IEFD, which is usually the case in Gal_xMnxAs, M(T) is expected to grow at T ~ 0
according to the Brillouin function (Dietl et a1. 2oo1c), in agreement with the experimental
results (Matsukura et a1. 1998b), shown in fig. 13. For lower hole concentrations or higher
Mn content, M(T) will tend to its saturation value M; somewhat slower (Dietl et a1. 2oo1c).
This, together with a lowering of M (T) by spin wave excitations, may account for the
dependence M(T)/ M s = 1- AT 3/ 2 , detected experimentally for T ~ 0 (Potashnik et a1.
2001).
Both hydrostatic and axial strain affect the valence band, and thus alter the magnitude of
the density of states and Tc : Quantitatively, however, the effect is evaluated to be small
(Dietl et al. 2001c). There exists another mechanism by which strain may affect Tc·
It is presently well known that the upper limit of the achievable carrier concentration
is controlled by pinning of the Fermi level by impurity or defect states in virtually all
compound semiconductors. Since the energies of such states in respect to bands vary
strongly with the bond length, the hole concentration and thus Tc will depend on strain.
Apart from Tc and Ms , it is interesting to consider means making it possible to tailor
magnetic anisotropy, and thus the direction of the spontaneous magnetization, the coercive
force, the switching field, the domain structure. Already early studies of the ferromagnetic
phase in Int-xMnxAs (Munekata et al. 1993) and Gat-xMnxAs (Ohno et al. 1996b;
Shen et al. I997a) demonstrated the existence of a sizable magnetic anisotropy. Magnetic
anisotropy is usually associated with the interaction between spin and orbital degrees of
freedom of the d-electrons, According to the model advocated here, these electrons are
in the d 5 configuration. For such a case the orbital momentum L = 0, so that effects
stemming from the spin-orbit coupling are expected to be rather weak. It has, however,
been noted that the interaction between the localized spins is mediated by the holes that
have a non-zero orbital momentum (Dietl et al. 2(00). An important aspect of the Zener
model is that it does take into account the anisotropy of the carrier-mediated exchange
interaction associated with the spin-orbit coupling in the host material (Dietl et al. 2000,
2001c; Abolfath et al. 2(01), an effect difficult to include within the standard approach to
the RKKY interaction.
A detail numerical analysis of anisotropy energies has been carried out for a number
of experimentally important cases (Dietl et al. 2000, 2001c; Abolfath et al. 2(01). In
particular, the cubic anisotropy as well as uniaxial anisotropy under biaxial strain have
been studied as a function of the hole concentration p. The computation indicates that for
the parameters of Gal-xMnxAs films grown along the [001] direction, the spontaneous
magnetization M lies in the (001) plane, and the easy axis is directed along the [100]
or along the [110] (or equivalent) crystal axis depending on the degree of the occupation
the hole subbands as well as on their mixing by the k . p interactions. As a result, the
easy axis fluctuates between [100] and [110] as a function of p, the preferred direction
for typical hole concentrations being [110]. The magnitude of the external magnetic field
Heu that aligns M along the hard direction in the (001) plane is evaluated to be up to
0.2 T (Dietl et al. 200 Ic). However, the orientation of the easy axis changes rapidly with p
and M. Therefore disorder, which leads to broadening of hole subbands, will presumably
diminish the actual magnitude of magnetic anisotropy. The field /-Lo H eu determines also the
magnitude of the switching field, which could be observed in microstructures containing
only a single domain. In macroscopic films, however, smaller values of the coercive field
/-LoHe are expected as actually observed: typically /-LoHe = 4 mT for the magnetic field
along the easy axis in the (001) plane in Gat-xMnxAs (Shen et al. 1997a).
It can be expected that strain engineering can efficiently control magnetic properties
resulting from the hole-mediated exchange. Indeed, sizable lattice-mismatch driven by
biaxial strain is known to exist in semiconductor layers. In some cases, particularly if
epitaxy occurs at appropriately low temperatures, such strain can persist even beyond the
critical thickness due to relatively high barriers for the formation of misfit dislocations. It
has been found that the biaxial strain leads to uniaxial anisotropy, whose magnitude can
be much greater than that resulting from either cubic anisotropy or stray fields. As shown
1.2
x =0.05
.......
-
I-
c:
::x:::>
1.0
0.8
IfJNol =1.2 eV
AF =1.2
e
"U 20
(1) 0.6 3.5x10 em"
u:: /
>.
a. 0.4
......
0
0
0 0.2
U)
'2
-c
0.0
-1.5 -1.0 -0.5 0.0 0.5 1.0 1.5
Biaxial Strain exx (%)
Fig. 26. Computed minimum value of the magnetic field Hun necessary to align the saturation value of
magnetization M s along the hard axis as a function of biaxial strain component €x. for two values of the hole
concentrations in Gao.95Mno.05As. The symbol [100]-> [0011 means that the easy axis is along [100]. so that
Hun is applied along [(01) (Dietl et al. 200lc).
in fig. 26 for the experimentally relevant values of p and M. the easy axis is predicted
to be oriented along the [00 I] direction for tensile strain, whereas it should reside in the
(001) plane for the case of unstrained or compressively strained films (Dietl et al. 2000,
200lc; Abolfath et al. 2(01). This is corroborated by the experimental study (Ohno et al.
I996b), in which either (In,Ga)As or GaAs substrate was employed to impose tensile or
compressive strain in Gai-xMnxAs, respectively. In particular, for the Gao.965Mno.035As
film on GaAs, for which t:x x = -0.24%, the anisotropy field /-LoHun = 0.4 ± 0.1 T is
observed (Ohno et al. 1996b; Shen et al. I997a, I997b, 1997c, 1997d), in quantitative
agreement with the theoretical results of fig. 26. This field is about two orders of magnitude
greater than that evaluated from the extrapolation of ESR data on single-ion anisotropy
at low x (Fedorych et al. 200 I), a result confirming the dominant contribution of the
holes to the magnitude of Hun. Though no theoretical computations have been performed
for Inl_xMnxAs, a qualitatively similar effect of biaxial strain is expected, in agreement
with results of Munekata et al. (1993), who tailored the easy axis direction by employing
(AI,Ga)Sb or AI(Sb,As) substrates with various Ga contents or As contents.
Recently, the structure of magnetic domains in Gal_xMnxAs under tensile strain has
been determined by micro-Hall probe imaging (Shono et al. 20(0). The regions with
magnetization oriented along the [00 I] and [00 i) easy axis form alternating stripes
extending in the [110] direction. This indicates, for either Bloch or Neel domain walls,
that the in-plane easy axis is rather along [110] than along [100] directions, a conclusion
consistent with the theoretical expectation for in-plane (cubic) magnetic anisotropy
presented above. As shown in fig. 27, the experimentally determined stripe width is
.
10 r-----r--..--"""T"-.......
• --,----T""""'--.,
• .
-E - - - ---"
·
--
::1.
.c
:2
6 •
_........ - _ --
....
-- --
"
"
,-
......•.
-- ----
~
c:
'm
E
4~
• ·
o ..........................................rfJ
o 2 ·
."
0'--_ _......._ ....._ . & -......_ .
......._ .
....._ . & -...... -'
0.0 0.2 0.4 0.6 0.8 1.0

Relative Temperature Tffc
Fig. 27. Temperature dependence of the width of domain stripes as measured by SOOno et al. (2000) for the
Gao.957Mll().043As film with the easy axis along the growth direction (fun squares). Computed domain width is
shown by the solid line. The dashed line is computed assuming that the parameter Ac (eq. (20» is by a factor of
1.8 greater (Dietl et al. 200la).
W = 1.5 JLm at 5 K for a 0.2 JLm film of Gao.957MnO.043As on Gao.SdnO.16As, for which
a tensile strain of cxx = 0.9% is expected. According to the micromagnetic theory, W is
determined by the dimensionless parameter Ac, which is given by the ratio of the domain
wall and stray field energies,
(20)
where d is the film thickness.

Figure 27 presents values of W(T) calculated by Dietl et aI. (200la) in comparison
to the experimental data of Shono et al. (2000). Furthermore, in order to establish the
sensitivity of the theoretical results to the parameter values, the results calculated for a
value of Ac that is 1.8 times larger are included as well. The computed value for low
temperatures, W = I. I JLm, compares favorably with the experimental finding, W =
1.5 JLm. However, the model predicts a much weaker temperature dependence of W than
observed experimentally, which Dietl et al. (200la) link to critical fluctuations, disregarded
in the mean-field approach.
8.6. Limitations and refinements ofthe mean-field Zener model

It is obvious that the role of randomness in the distribution of Mn acceptors and extrinsic
defects, which is neglected in the model in question, will grow with approaching the
localized regime. According to the two fluid model discussed previously, there is a
coexistence of weakly localized carriers and bound magnetic polarons in this regime. In
this context particularly interesting are results of Bhatt and Berciu (200 I), whose starting
point is the impurity band of holes localized by the Mn acceptors. Interestingly, according
to their numerical mean-field treatment, positional disorder enhances Te. A further study
along the same lines (Kennett et al. 200 1) supports the two fluid picture, demonstrating
the presence of "strongly" and "weakly" coupled spins. It worth noting that the itinerant
carriers may set long-range ferromagnetic correlation between magnetic polarons. Since
Te is proportional to the square of the relevant spin vectors, the weight of the BMP
contribution may greatly exceed their relative concentration. The latter, together with the
disorder enhancement of Te mentioned above, may account for higher values of Tc on the
insulator side of the MIT than those expected from the Zener model.
Another important issue requiring further studies is the role of carrier-carrier correlation.
It is known that the effect of disorder on carrier-carrier interactions controls the
localization and enhances the spin susceptibility (Altshuler and Aronov 1985), and thus
the tendency towards ferromagnetism. However, spin-disorder scattering may limit the
efficiency of this process (Altshuler and Aronov 1985). If this is the case, LSDA (Jungwirth
et al. 1999; Lee et al. 2(00) can provide a reasonable evaluation of the relevant Fermi-liquid
parameter.
There are three other experimentally important situations, for which the mean-field
Zener model, as introduced above, ceases to be valid. The first one corresponds to the case
when an average time of carrier tunneling between typical Mn pairs (Vx~~3)-1 becomes
1
significantly longer than the inverse exchange energy INoPI- • Here V is the width of the
carrier band, and its magnitude, not the Fermi energy as sometimes suggested, constitutes
the relevant energy scale. For long tunneling times, the virtual-crystal approximations
break down, an effect detected in Cdl-xMnxS (Benoit a la Guillaume et al. 1992). A
modified double-exchange model will constitute an appropriate description of the carrier-
mediated exchange interaction in the strong coupling limit V < INoPI, where the holes are
bound in Zhang-Rice (Zhang and Rice 1988) states, and only occasionally hop between
the Mn ions. Here, a strong sensitivity of Te to the concentration of compensating donors
is expected. Dynamic mean-field theory, as developed for III-V magnetic semiconductors
by Chattopadhyay et al. (2001), can constitute an appropriate approach in this regime.
Another regime, in which the mean-field Zener model may cease to be valid, is that
of large carrier concentrations n > XeffNO. In the limit when the continuous-medium
approximation is obeyed, n « x No, the mean-field value of the ordering temperature
T(q) deduced from the RKKY model are identical, independently of microscopic spin
arrangement. If, however, n > XeffNO, important changes in the carrier response function
occur at the length scale of a mean distance between the localized spins. Accordingly,
the description of spin magnetization by the continuous-medium approximation, which
constitutes the basis of the Zener model, ceases to be valid. In contrast, the RKKY model
is a good starting point in this regime (Ferrand et al. 200 1), as it provides the dependence
of the interaction energy of particular spin pairs as a function of their distance. This makes
it possible to evaluate the system energy for a given distribution of the localized spins.
Here, randomness associated with the competition of ferromagnetic and antiferromagnetic
interactions can drive the system towards a spin-glass phase (Eggenkamp et al. 1995). In
the extreme case, n »XeffNO, the Kondo effect that is dynamic screening of the localized
II1-V FERROMAGNETIC SEMICONDUcrORS 61
spins by the sea of the carriers may preclude both ferromagnetic and spin-glass magnetic
ordering.
Finally, the accuracy ofthe mean field approximation (MFA) ought to be addressed. It is
well known that the MFA results are exact if the range of spin-spin interactions is infinite
(Fisher et al. 1972). The decay of the strength of the carrier-mediated exchange interaction
with the distance r between two Mn spins is described by the RKKY function. At small r,
the interaction is ferromagnetic, and then changes sign at r = 1.2rc , where rc is an average
distance between the carriers that mediate spin-spin coupling. This means that the MFA is
valid quantitatively at n «xeffNo, a conclusion consistent with the estimate of Tc taking
the spin wave excitations into account (Konig et al. 2000). Actually, however, the range
of validity of the MFA is significantly larger than that initially found (Konig et al. 2(00),
as the magnitudes of spin stiffness evaluated within the 6 x 6 Luttinger model are much
greater (Konig et al. 2001) than those obtained for a simple parabolic band (Konig et a1.
2000).
Recently, Monte-Carlo studies of carrier-mediated ferromagnetism in semiconductors
have been initiated (Sakai et al. 2001; Sakai and Suzuki 2001; Bosselli et al. 2000;
Schliemann et al. 200la, 200lb). Such an approach has a potential to test the accuracy
of the approximations mentioned above and to determine the actual spin configuration
corresponding to the ground state. Preliminary results appear to confirm the validity of the
MFA (Sakai et al. 200 I; Bosselli et al. 2(00), and indicate a possibility of the existence
of non-collinear magnetic structures in low-dimensional systems (Bosselli et al. 2(00).
More recent comprehensive simulations of Schliemann et al. (200 Ib) carried out within
the hybrid Monte Carlo scheme, identify the parameter space, in which the mean-field
Zener model may break down. It would be interesting to check separately the regions of
validity of particular approximations involved: MFA, virtual crystal approximation (VCA),
and molecular-field approximation, as well as to elucidate the role of electrostatic disorder.
9. Heterostructures
New physics such as the fractional quantum Hall effect has emerged from non-magnetic
semiconductor heterostructures. These systems have also been a test bench for a number
of new device concepts, among which are quantum well lasers and high electron mobility
transistors. Ferromagnetic III-Vs can add a new dimension to the III-V heterostructure
systems because they can introduce magnetic cooperative phenomena that were not present
in the conventional Ill-V materials.
9.1. Basic properties of heterostructures

9.1.1. Structural properties ofmultilayer structures
Figure 28 shows a typical double-crystal x-ray diffraction pattern of the (004) reflection
of a GaAsI(Ga,Mn)As superlattice grown on GaAs (001) substrate, taken by employing
CuKa( radiation (Shen et al. 1997d). The sample consists of 20 periods of nominally
11.4-nm thick GaAs and 12.l-nm thick (Ga,Mn)As with x = 0.054. Satellite peaks
witnessing the periodicity of the structure are clearly visible. Theoretical simulations of
the rocking curve were carried out by adding background noise of 10 cps. The values of
d~I=11.79 nm - - experimental
d(Ga.Mn~1=11. 74 n - - - simulated
xMn=0.056
10'
10° ......WooI. ...._ .....................WooI. ...._ ..........- . .

-1500 -1000 -500 0 500 1000 1500
Relative Angle (arcsec)
Fig. 28. X-ray diffraction rocking curve of (Ga,Mn)AslGaAs superlattices with 20 periods (solid line). The
nominal thicknesses of the GaAs and (Ga,Mn)As layers and the Mn composition x are 11.4 nrn, 12.1 nm,
and 0.054, respectively. The dashed line shows the simulated rocking curve. The fit to the experimental curve
is obtained with GaAs and (Ga,Mn)As thicknesses and x of 11.14 nm, 11.79 nm, and 0.056, respectively (Shen
et al. 1997d).
the elastic constants and the Debye-Waller factor determined for GaAs were adopted for
zinc-blende MnAs. The best fit shown in fig. 28 reveals that x = 0.056 as well as that the
thicknesses of the GaAs and (Ga,Mn)As layers are 11.4 nm and 11.70 nrn, respectively,
in good agreement with the nominal values. The fact that almost the same line width is
obtained for the experimental and the simulated satellite peaks suggests a high quality of
the films and the interfaces. The high perfection of the structure is also confirmed by the
observation of thickness fringes due to perfect crystal diffraction from thin films.
9.1.2. Magnetic properties ofsuperlattices, thin films. and quantum wells

Transport measurements on multilayer structures demonstrate that the ferromagnetism
can be retained down to a (Ga,Mn)As layer thickness of 5 nm, below which the structure
becomes paramagnetic. On the other hand, there was a report on the persistence of
ferromagnetic properties in short-period superlattices consisting of m (Ga,Mn)As and n
GaAs monolayers, with 8:::; m :::; 12 and 4 :::; n :::; 8 (Sadowski et al. 200le). The reason
for these diverging conclusions is not clearly understood; it may be related to the Mn
segregation at the initial stage of growth, which leads to a depletion of Mn and/or the
distribution of the spin-polarized carrier (Louriero da Silva et al. 2001; Vurgaftman and
Meyer 2(01). Multiple (Ga,Mn)As quantum wells (QWs) were also fabricated and studied
by means of magnetization, magneto-optical and magneto-transport phenomena (Hayashi
et a1. 1997b, 1998). No ferromagnetic order in (Ga,Mn)As QWs with thickness less than
5 nm is observed. MCD results show clear evidence of the quantum confinement and the
formation of subband.
(Gs o965MnO 035)AslL T-GaAs 10 K

1 J.lm 180 nm
~
r
_ .~ ..~ .., :-_-;.IO~~---'I
•• -
,. : , 10 nm
• . I
I .
. ' I
..
I' I
....u
--- --
0
0 500
n
0.0 0.5 1.0
B (T)
Fig. 29. Thickness dependence of the ratio of Hall resistance and sheet resistance RHall/ Rsheet, which is
proportional to magnetization perpendicular to the film plane, as a function of the magnetic field at 10 K. The
inset shows the thickness dependence of TC (Matsukura et aI. 1998a).
Figure 29 shows the thickness dependence of magnetization in (Ga,Mn)As films, as

determined by the Hall effect (note that RHaU/ Rsheet oc M) (Matsukura et al. 1998a). The
inset presents the values of Tc in these films. Apart from an increase in anisotropy and
a gradual growth of Tc, no significant changes are observed when the film thickness
is reduced from I /Lm to 10 nm. Below 5 nm, however, the (Ga,Mn)As films become
insulating. At the same time, Tc drops significantly, often below the lowest studied
temperature of 2 K. Similarly, the ferromagnetism disappears in (Ga,Mn)As QWs, if
their width is below 5 nm (Hayashi et al. 1997b). No systematic differences in the
behavior of superlattices, thin films or quantum wells have been detected. In contrast, the
ferromagnetism was observed in GaAs samples to which a submonolayer of MnAs was
inserted (Kawakami et al. 2000). Further studies are apparently necessary to understand
the thickness dependence of magnetic properties in these materials.
9.1.3. Band offset between (Ga,Mn)As and GaAs

A heterojunction is primarily characterized by the band alignment. This most fundamen-
tal property of any heterojunction is not well established in the case of Mn-doped III-V's.
The difficulty in determining the band offset arises from a number of reasons, such as a
high doping level in Mn-doped I1I-V's and a relatively small values of Mn concentrations,
which results in a tiny magnitude of the band offset. The close examination of current-
voltage (I-V) characteristics of p-i-n and p-p diodes made of (Ga,Mn)As and GaAs shows
that thermoionic emission at temperatures higher than Tc is the dominant mechanism of
the current transport (Ohno et al. 2000; Ohno et al. 2001; Arata et al. 2001). By ana-
lyzing the temperature dependence of the I-V characteristics, one can deduce the barrier
200 2
>
.
<l>
E
• E
- -•
"::l
.I::.
0)
'0) 100
i-GaAs v
1 ~
•
.I::.
....
<l>
.;::
);'
....
CO
.0 0
0
00 -
0
0 0
0.00 0.04 0.08
X
Fig. 30. Barrier height [). measured by current-voltage (I-V) characteristics of (Ga,Mn)As/GaAs diodes. [).
shown by closed circles is the barrier height between the Fermi energy of (Ga.Mn)As and the valence band top
of GaAs as shown in the inset. Open circles depict the effective Richardson constants. (Ohno et aI. 2001).
height between (Ga,Mn)As and GaAs measured from the Fermi level of (Ga,Mn)As. Re-
sults of such an analysis are depicted in fig. 30 (Ohno et al. 200 I), which presents the mea-
sured barrier height t:.. as a function of x , together with the associated effective Richardson
constant (A* / A). Inset shows the band structure of the measured samples. The findings
demonstrate that the holes flowing from the (Ga,Mn)As side have to overcome a barrier
of about 100 meV, the value being virtually independent of x. However, the interpreta-
tion of this number and the determination of the bare offset t:.. E v between (Ga.Mn )As and
GaAs valence band edges is by no means straightforward. In particular, the Fermi energy
of (Ga,Mn)As (usually of the order of 100 meV) has to be taken into account, which will
result in t:..Ev :::::: 200 meV. At the same time, however, band gap renormalization caused
by the hole-hole interactions, the hole coupling to the system of ionized impurities, and
the impurity band formation will shift the (Ga,Mn)As valence band edge towards higher
energies, reducing t:..Ev .
9.2. Spin-dependent scattering, interlayer coupling. and tunnel magnetoresistance in

trilayer structures
Ferromagnetlnonmagnetlferromagnet trilayer structures constitute the most fundamental
building block of modem magnetic sensors and storage elements, and are useful for
the examination of various magnetotransport processes. Especially important is spin-
dependent scattering in such structures, as this is the basic process that gives rise to the
effect of giant magnetoresistance (GMR). Equally important is the effect of tunneling
magnetoresistance (TMR) in structures containing a thin insulator as the nonmagnetic
layer. In order to investigate the nature of spin-dependent transport in systems made
of semiconductors only, various (Ga,Mn)As/(AI,Ga)As/(Ga,Mn)As structures have been
0.3 r - -....T""',.......-r---....,......_.., 2.50

..
-- -- .
0.2
!
ct 0.1
00 1-A...._I.0001....._I.0001..................... ~ 2.48
~ -4 o 4 8
B (mT)
Fig. 31. Hall resistance RHall (circles) and sheet resistance Rsheel (triangles) versus magnetic field B at 25 K for
a (Gao.9sMno.os)As/(Alo.14Gao.86)As/(Gao.97Mno.03)As trilayer structure. Closed and open symbols show the
major and minor loops, respectively. Dashed arrows indicate sweep directions of the magnetic field. The minor
loop of RHall is skewed by the presence of a ferromagnetic coupling between the two (Ga,Mn)As layers (Chiba
et al. 2000).
prepared and studied (Akiba et al. 1998a, 1998b, 2000a; Hayashi et al. 1999; Chiba et al.
2000; Higo et al. 2001a, 2001b).
Figure 31 presents the field dependence of the Hall resistance and the magnetoresistance
at 25 K for a Hall bar pattern of a trilayer structure (Chiba et al. 2(00). The device consists
of two 30 nm Gal-xMnxAs layers separated by a 2.8 nm nonmagnetic Alo.14Gao.86As
layer, acting as a barrier for holes, whose height depends on the AI concentration. The
layers are grown onto a 50 nm Alo.30Gao.70As buffer and a I ILm relaxed InO.15Gao.85As
film. The Mn content x = 0.05 and 0.03 ofthe two (Ga,Mn)As layers results in a difference
of their coercive forces. The (Ino./SGao.8S)As film introduces a tensile strain, which makes
the magnetic easy axis to be perpendicular to the structure plane. With this easy axis
direction, the Hall effect can be used to monitor magnetization.
Parallel transport in trilayer structures is characterized by the MR ratio (Rsheet - Ro)/ Ro,
where Ro is the layer resistance in the absence of the external magnetic field, Rsheet(B = 0),
and for parallel magnetizations M of the two (Ga,Mn)As layers. A plateau seen in the Hall
resistance data collected in fig. 31, indicates that magnetizations of the two (Ga,Mn)As
layers are anti-parallel (note that RHall is proportional to a weighted average of M of the
two (Ga,Mn)As layers). A clear increase of the MR ratio is observed in the plateau region
between 3 and 6 mT. This demonstrates the presence of spin-dependent scattering in the
trilayer structures made of semiconductors only. The MR ratio decreases with the increase
of AI composition in the barrier, which reduces the number of holes traveling across it.
In the minor loop measurements, when the direction of magnetization of one of
the two layers is fixed, the hysteresis loops of RHall and the MR ratio show a good
correspondence (open symbols in fig. 31). This confirms that the observed MR effect
66 F. MATSUKURA et 31.
60
(a)
20K
30
--E
l-
-
~
0
-30 -,
,,
-...
6
--
-
0~
0:::0 3
(b)
•
~
:\
+
.%
#:
• !
0
0
T (K)
•
- 5
44
43
-
~ I
+
t
42
--6'
::tl
-
0::: 0
41
-50 0 50 100
B (mT)
Fig. 32. (a) Magnetization M and (b) tunneling magnetoresistance of 30 nm (Gao.95MnO.os)As/2.8 nm
AIAs/30 nm (Gao.97MnO.03)As tunnel junction at 20 K. Inset shows the temperature dependence of tunneling
magnetoresistance ratio (Chiba et 31. 2000).
is indeed due to spin-dependent scattering. The minor loop is shifted away from B =
0, which indicates that there is a ferromagnetic interlayer coupling between the two
(Ga,Mn)As layers. The magnitude of this coupling estimated from this shift is quite
small « I l.d/m 2 ) . The coupling is always ferromagnetic. although theory predicts an
antiferromagnetic interaction under certain sets of parameters (Jungwirth et al. 1999).
The magnitude of the coupling increases with the lowering of the Al composition in
the (AI.Ga)As barrier. This suggests that the interlayer coupling is mediated by holes.
Elastic neutron scattering and polarized neutron reflectivity measurements on short-period
(Ga.Mn)AslGaAs superlattices show also the presence of a ferromagnetic interlayer
coupling (Szuszkiewicz et al. 200 I; Kepa et al. 200 I). An interlayer coupling between
two (In,Mn)As layers separated by InAs has also been observed (Yanagi et al. 2(02).
Vertical transport measurements of trilayer structures reveal the presence of TMR.
Figure 32a shows findings obtained at 20 K for a device containing a 2.8 nm AlAs barrier
(Chiba et al. 2000). The structure was grown on a (In,Ga)As film to fix the magnetization
direction perpendicular to the plane. For TMR measurements. the electrodes were formed
on the top and bottom (Ga.Mn)As layers. The temperature dependence of the MR ratio
is shown in the inset to fig. 32. The difference in the coercive forces produces a plateau
visible in fig. 32a, in the region, where magnetizations of the two ferromagnetic layers
IIl-V FERROMAGNETIC SEMICONDUcrORS 67
-
N
E
0
25 (a)
8K -
minor loop
~
II . 60
-a 4> Ir ~
'I
I,
40
-l
3:
"
-~
I ::0
0 20 II
c II
JJ
'ii)
II
II
20
4>
0::: ~ , I
I I .o
15
-
-20 -10 0 10 20
B 1/ [100] (mT)
100 I I I
(b)
/---\
81/[100] 8K
-
~
0
0
:0::
50
~
0:::
~
~
•
-
/-----,.,
81/[110]"
--I
0 .. ~-.-
1.4 1.6 1.8 2.0 2.2
Barrier thickness (nm)
Fig. 33. (a) TMRcurves at 8 Kof a Gaj __ xMnxAs(x =4.0%.50 nm)/AiAs (1.6 nm)/Gal_xMnxAs (x = 3.3%.
50 nm) tunnel junction 200 J./-m in diameter. Bold solid and dashed curves were obtained by sweeping the
magnetic field from positive to negative and negative to positive. respectively. A minor loop is shown by a thin
solid curve. The magnetic field was applied along the (100) axis in the plane. (b) Barrier thickness dependence of
TMR values with the magnetic field applied along the [100] and [110] axes at 8 K (Tanaka and Higo 2001).
are antiparallel. A resistance increase is observed between 8 mT and 16 mT, in the field
region corresponding to an antiparallel configuration of magnetizations. The MR ratio
is about 5.5% at 20 K. This is TMR, because the barrier produced by AlAs is high
(0.55 eV), so that the hole transport across the AlAs layer proceeds by tunneling. The
TMR ratio decreases with temperature most probably due to a corresponding drop of
spontaneous magnetization in (Ga,Mn)As layers. A TMR ratio over 70% was observed in
a (Ga,Mn)AsIAIAs/(Ga,Mn)As structure with an AlAs thickness of 5 monolayers (1.6 nm)
as shown in fig. 33. Such a high value indicates that spin polarization of carriers in
(Ga,Mn)As is quite high (Higo et al. 2oo1a, 2oo1b; Tanaka and Higo 2001). A theoretical
calculation ofTMR with ferromagnetic DMS electrodes shows how the TMR ratio depends
on the Mn and hole concentrations (Lyu and Moon 2001).
9.3. Resonant tunneling diodes (RTDs)

Spontaneous magnetization in ferromagnetic semiconductors gives rise to spin splitting of
the conduction and valence bands due to the presence of exchange interaction. This spin
•••• HH
---- LH2
•••• HH3
GaAs
•... HH
(Ga.Mn)As GaAs .... LH1
I, GaAs:Be
•••• HH11.-......... _
AlAs AlAs
I GaAs 5 nm
o v
Fig. 34. Schematic valence band diagram of resonant tunneling diode structures. simplified diagram of energy
versus wave vector parallel to the interface. and resulting 1-V curve by spin-splitting of the valence band of
(Ga,Mn)As emitter.
splitting can be observed in current-voltage (l- V) characteristics of resonant-tunneling

diodes (RTDs) having a ferromagnetic emitter as shown in fig. 34. Nonmagnetic double
barrier AIAslGaAslAIAs RIDs with a (Ga,Mn)As emitter reveal spontaneous splitting
of resonant peaks below Tc of (Ga,Mn)As, even in the absence of an external magnetic
field (Ohno et al. 1998; Akiba et al. 1998a, 1998b). Figure 35a shows the temperature
dependence of dl /d V versus V of an RTD having a (Ga,Mn)As emitter. Clear spontaneous
splitting of resonant peaks labeled HH2 and LHI is observed below Tc of 60 K. The
structure in question was grown onto a p+ GaAs substrate and consists of several layers
(from top): 150 nm (Gao.965MnO.035)As/15 nm undoped GaAs spacer/5 nm undoped
AlAs barrier/5 nm undoped GaAs QW/5 nm undoped AlAs barrier/5 nm undoped GaAs
spacer/150 nm Be doped GaAs (p = 5 x 10 17 cm- 3)/150 nm Be doped GaAs (p =
5 x 10 18 cm"). Each label in fig. 35 indicates the resonant state in the GaAs well, where
in total six states occur.
Akiba et al. (2000b) performed a calculation of the corresponding dl /dV-V character-
istics, taking into account a strong k-dependent mixing and the presence of the exchange
(a) T (I<)
- - - - - - -.......---~ .....-...-......... 300
- ........--...------":j250
2 3 4 5
M 1/(110), x = 0.05,
(b) p = 1x1Uo em",compressive strain 1 %
H1 /\ HH3 lI.t2 .•.... NrfJ(eV)

..·....lH1 / ,'·.~H2.~.~
.. .,",.\..
..··P.....'"_../_\.
, '"~\ '".HH4 -. 0
..... , ,' ~\.".:. - " -0.2
.... , .'\ ... ~ ~_
.... -,. .,', \' .-.. ., .• -.---

- , ..--
-0.5
...... ,r=.\;11- "-. ' •• _..... 7
-._ . •' " ....._._.-._. ._.-0.
.
.. . . . .
IIIIlIIooo
..
oo. -1-.
.. \
__ .... _ ~ .... ~ \. " _ _ _ _ _
. , ..... - -1.0
-1.2
~ ""---
," ,.".,----""'---..f -1 .5
0.0 0.2 0.4 0.6 0.8 1.0 1.2

V(V)
Fig. 35. Temperature dependence of the differential conductance dJjdV versus bias voltage V of a resonant
tunneling diode with a (Ga,Mn)As emitter. No magnetic field is applied (Ohno et al, 1998). (b) Calculated
resonant tunneling spectra as a function of the exchange energy Nof3 (Akiba et aI. 2000b).
interaction. Previous theoretical approaches to p-type RTD's (Chao and Chuang 1991; Ro-
drigues Bittemcourt et at. 1998) were supplemented by incorporating the p-d exchange
interaction into the 6 x 6 Luttinger-Kohn Hamiltonian. The resonant states in the GaAs
well were calculated by using the 4 x 4 Hamiltonian. The current density Jz for a given
hole concentration and voltage was then calculated as,
4
Jz=~
(2Jr) .
L'/_1
ff'(J E(EF
d 3k.(aE).T*Tij'[J(E)-f(E-eV)],ciI.
ak z
I,J, -
(21)
Here. T* Tij is the transmission coefficient from the heavy or light hole state in the
emitter to the heavy and light hole states in the collector. f(E) the Fermi-Dirac
distribution function. Cit is the probability amplitude of the jth hole state in the lth band.
Figure 35b shows the calculated dl/dV-V characteristics with JNoPI as a parameter.
which corresponds to various values of magnetization in the present case. A I nm AlAs
barrier is assumed to avoid numerical instability. A 5% compressive strain is included in
the (Ga.Mn)As (x = 0.05) layer containing I x 1020 holes per em". The magnetization
is assumed to be in plane along the [110] direction. As can be seen in fig. 35b. the HH2
resonant peaks shows a clear splitting as NoP (magnetization) increases. whereas other
peaks (except probably LHl) do not show such pronounced splitting. the conclusions being
in accord with the findings. The splitting of the HH2 peak is so pronounced because the
dispersion of the HH2 resonance is similar to that of the dominant valence band state in
the emitter. Other resonant states either show a very different dispersion and/or lie high
in energy. where transmission maxima become broad. Note that no clear cut-off of the
current is observed neither in the experiment nor in theory because of a rather high hole
concentration. The present results indicate that because of a complex interplay between the
k . p and exchange interactions. it is necessary to go through a rather elaborate calculation to
understand the origin of the peaks and their splitting. Similar calculations were performed
for different structures with a DMS QW and adopting Keldysh formalism (Petukhov et al.
2000; Inoue et al. 2000; Nonoyama and Inoue 2001; Kuivalainen and Hovinen 2002).
9.4. Spin-injection inferromagnetic semiconductor heterostructures

Spontaneous magnetization in ferromagnetic semiconductors introduces an imbalance in
the spin population of the carries. Thus. these materials can be used as a source of
spin polarized carriers. which can be injected into non-magnetic structures. In spite of
the common belief that very fast hole spin relaxation precludes the effect. hole spin
injection from (Ga.Mn)As into GaAs was demonstrated (Ohno et al. 1999). Figure 36a
shows a schematic diagram of a light emitting diode employed to demonstrate the spin
injection. Partly spin polarized holes are injected from a p-type (Ga.MnjAs layer through
an intrinsic GaAs spacer into an (In.GajAs QW. where they recombine with unpolarized
electrons injected from nonmagnetic n-type GaAs substrate. The spin polarization of
the recombining holes and hence spin injection is demonstrated by the observation of
electroluminescence (EL) polarization. Figure 36b shows the relative polarization change
!l P as a function of the magnetic field at various temperatures. Two polarization states
are clearly observed at B = 0 at low temperatures. A series of experiments was done to
exclude effects of both fringing fields and magnetic circular dichroism from the adjacent
(Ga.Mn)As. Because the easy direction is in-plane for (Ga.Mn)As grown on GaAs. EL
was collected along the direction parallel to the QW plane. Since the selection rule at the
very bottom of the band in QW does not allow emission of circularly polarized light in this
direction. the effect of band filling (Le. nonzero k) needs to be taken into account to fully
understand the results.
Injection of electron spins is preferable from the application point of view as electrons
usually exhibit longer spin lifetime. Spin-injection experiments using n-type II-VI DMS
in the magnetic field were performed by Fiederling et al. (1999) and Jonker et al. (2000).
An appealing scheme for electrical electron spin injection from a ferromagnetic material
(a)
GaAs spacer (il
(In,Ga)As (i)
GaAs (i)
GaAs spacer (i)I--------i
GaAs substrate (n)b:::::::::!!j!Zl:::::::::::::J
(b) --
"#. E = 1.34eV
d= 140 nrn , r- I.
1
..
~
.~
c:
0
cu
1= 2.8 rnA
--+-sweepup
-It-sweepdown
- . - 6K
-e- 16 K
"
~oof.
CU
0Q. -£-31 K
0 ... 5 2 K "
.5
\I)
C)
c:
CU
~ily' "./
;.",:,..___",d-"
--
'i1-
-
~
I»
~
..•.
c:
-fi .;: :~.,. ~ 0..
-
~
\I) :~ . <3 if
.....:::cu -1 :. - :: ' -t~~\
,=-,_.rr .
I
0
100
~
-15 -10 -5 0 5 10 15
B (mT)
Fig. 36. (a) The structure of a light emitting diode for detection of electrical spin-injection. (b) Relative change
in light polarization t>.P as a function of the magnetic field at four different temperatures. Inset compares the
remanent magnetization as determined by SQUID magnetomery with the remanent t>.P (Ohno et al. 1999).
is the use of a broken gap heterojunction system such as InAsiGaSb, in which the valence
band edge of GaSb is energetically higher than the conduction band edge of InAs. The
successful growth of ferromagnetic (Ga,Mn)Sb should make it possible to inject spin
polarized electrons into nonmagnetic InAs (Abe et al. 2(00). Another way is to use an Esaki
tunnel diode, a method successfully developed by Koda et al. (2001) and by Johnston-
Halperin et al. (2002), who employed p-(Ga,Mn)Asln-GaAs diodes.
By solving the drift-diffusion equation for a GaAs-based pn junction, it has been shown
theoretically that the spin-polarization in the p region can be transferred into the n region
with high efficiency through the depletion layer (Zutic et al. 200 I). In this structure the
spin polarization in the n region can be controlled by the external applied electronic bias;
i.e., an increase of forward bias results in a decrease of the spin polarization.
9.5. Photo-inducedferromagnetism in (In,Mn)As/GaSb

The relationship between Tc and the hole concentration indicates the possibility of control
of magnetic properties isothermally by light irradiation, electric field, carrier injection, and
all other means that change the carrier concentration in semiconductors. The concept of
such devices was proposed already in 1960s in the context of work on rare-earth magnetic
semiconductors (Methfessel 1965; Methfessel and Holtzberg 1966).
(In,Mn)As (12 nm, x = 0.06)/GaSb heterostructure was found to exhibit photo-induced
ferromagnetism as shown in fig. 37 (Koshihara et al. 1997). The illumination by photons
with the energy larger than the bandgap of GaSb (""' 0.8 eV) turns the paramagnetic
sample without remanent magnetization to a ferromagnetic state with a clear hysteresis
at 5 K. which is documented by both magnetization and magnetotransport measurements.
3
X = 0.06
.... 2
'"'
0.2 T
Eci
1 0°,"
EF 0
~ °00
Ev 00 10 20 30 40 50
hole
(In,Mn)As GaSb T(K)
8
....-
(c)
4 5K
N
b 0
-
~
X
~ -4
-8
-....'i 1
- ';;
0
et -1 - - •before irradiation
- - after irradiation
-2 L - _......__......---JL....- '---.....J
-0.3 0.0 0.3

Fig. 37. Band edge profile of a (In,Mn)AslGaSb heterostructure. EC. Ev , and EF denote band edges of
conduction band. valence band, and Fermi level, respectively. (b) Temperature dependence of the magnetization
observed during cooldown in the dark (open circles) and warmup (solid circles) under a fixed magnetic field
of 0.02 T. The effect of light irradiation at 5 K is also shown by an arrow. (c) Magnetization curves at 5 K
observed before (open circles) and after (solid circles) light irradiation. Solid line shows a theoretical curve.
(d) Hall resistivity PH.II observed at 5 K before (dashed line) and after (solid line) light irradiation (Koshihara
et aI. 1997).
The ferromagnetic state persists even after switching the light off and, at the same time,
a persistent conductivity is observed. If the sample is heated up to '" 45 K, the initial
state is recovered. It appears that the interface electric field separates photo-holes and
photo-electrons, the former being accumulated in the (In,Mn)As layer, which triggers
the ferromagnetism. According to the Hall measurements up to 15 T, a critical hole-
concentration that generates the ferromagnetic order is '" 3.8 x 1019 cm- 3 , whereas
the change of the hole concentration after illumination is as low as 1.4 x 1018 cm- 3.
Further studies are necessary in order to clarify the reason why there is a threshold
hole concentration and why only a slight increase of the hole concentration leads to
such a dramatic effect. A similar persistent light-enhanced magnetization is observed
in (lno.9sMno.os)(Aso.sSbo.2)lInSb heterostructure (Kanamura et al. 2(02). Reflecting
the small band-gap of InSb, a lower photon energy is more efficient than that for
the (In,Mn)As case. On the other hand, it is difficult to observe irradiation effects in
(lno.9sMno.os)(Aso.2Sbo.s)lInSb, which may be related to the small built-in electric field in
the structure.
Ferromagnetic (In,Mn)AslGaSb heterostructures with rectangular hysteresis show also
peculiar light-irradiation effects. In particular, the coercive force is drastically reduced by
the illumination, which suggests a reduction of the domain wall pining energy (Oiwa et aI.
2(01).
A magnetization enhancement of (Ga,Mn)As by circularly polarized light illumination
has been also observed (Oiwa et aI. 2(02).
These effects open up the possibility of novel magneto-optical memory devices.
9.6. Electric-field control offerromagnetism in gated structures

The modification of ferromagnetism was demonstrated also in a structure consisting of an
insulating-gate field-effect transistor (FET) with an (In,Mn)As channel (Ohno et aI. 2(00).
The 5-nm thick channel layer (x = 0.03) was grown on a 10 nm InAsl500 nm (Al,Ga)Sb
buffer and a GaAs substrate. A 0.8 /Lm gate insulator and a metal electrode completed the
device. The hole concentration in the channel was estimated to be 5-8 x 1013 cm- 2 from
the resistance changes with the gate voltage and Hall effect at room temperature. Figure 38
shows magnetization deduced from the Hall resistance at 22.5 K for three different values
of the gate voltage VG, +125, 0, and -125 V. The bias of VG = 125 V changes the
sheet-hole concentration by '" 3 x 1012 cm- 2. At zero gate bias, the channel is weakly
ferromagnetic as can be seen from the presence of a small hysteresis. The application of a
positive gate voltage depletes the channel and, thus, reduces the ferromagnetic interaction
mediated by the holes, which results in a paramagnetic behavior of the magnetization
without hysteresis. When the holes are accumulated by applying a negative gate voltage,
a clear hysteresis appears. The magnetization curve resumes its original values as the gate
voltage returns to 0 V. The 125 V swing give rise to ±6% change in the hole concentration
and results in a Tc change of ±4% (±l K).
The value of Tc calculated form the mean-field theory for three-dimensional (3D) case
(Dietl et aI. 2000, 2001c) is '" 18 K for (In,Mn)As with x = 0.03 and the hole density
1 x 1020 cm- 3 , which corresponds to p = 5 x 1013 cm- 3 in a 5 nm-thick film. For
this calculation the Luttinger-Kohn parameters given in by Wiley (1975), the energy of
the exchange interaction between the holes and Mn spins NofJ = -0.98 eV (Dietl et aI.
0.04 ...:- ....

r 1.5K
( ~(
1
5K
(
.~o, .. .:::t'.... ,
~
." ~.Q~
. 20
0.02 ~
• ...-t""':'
-c
~
-1
~_L
fJ ~ ... ,....
-'.~ .
- ""'---.... -
~
-
~
iii 0.00
-0.5 0.0
B (T)
... J"-' I.,.'

O.
.~ .......
a::
J: ,,~
", / '
,
6"':.,..
. ,-,,:..-
. ....
22.5 K
VG
-0.02 .~- OV .
-- +125 V
) --125V
-0.04
-1.0
~--
-0.5 0.0
_.- OV
•
0.5 1.0
B (mT)
Fig. 38. Hall resistance RHali of an insulated gate (In,Mn)As field-effect transistor at 22.5 K as a function of
the magnetic field for three different gate voltages. RHali is proportional to the magnetization of the (In,Mn)As
channel. Upper right inset shows the temperature dependence of RHali' Left inset shows schematically the gate
voltage control of the hole concentration and the corresponding change of the magnetic phase (Ohno et al. 2(00).
200lc), as well as the enhancement factor AF = 1.2 describing carrier-carrier interactions

(Jungwirth et a1. 1999) are adopted. The calculation also shows that a modulation of
I::!..p = 3 X 1012 cm- 2 gives a change of Tc of r - I K. These evaluations show. therefore.
a rather good correspondence with the experimental findings. On the other hand, the
thickness of the (In,Mn)As channel in the examined FET structures may suggest that the
system is two-dimensional (2D). For 2D systems. the mean-field theory predicts no carrier
concentration dependence of Tt; as long as the 2D density-of-states (DOS) that determines
Tc is energy-independent (Dietl et a1. 1997). For the hole concentrations in question,
several 2D subbands are occupied and the valence band DOS is a complex function of
energy, so that we expect a modulation of Tc through a modulation of p. Moreover, since
the mean free path is comparable to the quantum well width. the disorder-induced mixing
of electric subbands turns DOS towards the 3D value (Kossacki et a1. 2000).
An additional contribution to the modulation of Tc may come from the particular
design of the FET device: a nonmagnetic InAs is placed beneath the magnetic (In,Mn)As
layer. Application of positive (negative) bias displaces the hole wavefunctions away from
(towards) the magnetic layer, resulting in a reduction (increase) of the interaction between
the holes and magnetic spins and hence in a reduction (increase) of Tc (Lee et a1. 2000).
Control of ferromagnetism in gated structure has also been observed in a group VI
ferromagnetic semiconductor Mn.Ge I-x (Park et a1. 2(02).
9.7. Ferromagnetic imprinting

The manipulation of spin coherence of electron spins and nuclear spins in semiconductor
materials is one of the most important issues to pursue in spintronics for spin-based qubits
in future quantum computing. A proximity effect on spin coherence in nonmagnetic semi-
conductors in ferromagnet/semiconductor heterostructures has been observed (Kawakami
et a1. 200 1). The spin dynamics in GaAs on which a ferromagnetic layer, (Ga,Mn)As or
MnAs, is grown, is investigated using time resolved Faraday rotation (TRFR). The results
at 5 K show that the presence of a ferromagnetic layer strongly modifies the spin coherence
of electrons. The dependence of TRFR on applied magnetic fields shows hysteresis behav-
ior, and the effective field extracted from the data suggests that there is a nuclei-mediated
effective field. The results derived from all-optical nuclear magnetic resonance (Kikkawa
and Awshalom 2(00) on the samples also support the existence of the "imprinting" on
nuclear spins by the neighboring ferromagnetic layer.
10. Ferromagnetic semiconductors at room temperature
For the application of magnetic semiconductors, a Tc above room temperature is required.

Room-temperature ferromagnetic sulphospinels have been found in 1960's (Goodenough
1969; Van Stapele 1982), but the application of these ferromagnetic semiconductors
has been hampered by difficulties in their fabrication. Recent experimental as well
as theoretical progress in material science allows one to design and synthesize new
ferromagnetic semiconductors with Tc above room temperature.
10.J. Theoretical suggestions
The mean-field Zener model described in section 8 predicts Tc to lie above room
temperature for DMS containing large amounts of magnetic ions and carriers. Thus, the
elaboration of methods enabling a simultaneous increase of the magnetic ion and carrier
concentrations in DMS is one of the ways to be pursued (Dietl et a1. 2000, 2001c).
Furthermore, a chemical trend was theoretically established, suggesting that the highest
values of Tc can be achieved in materials containing light anions (Dietl et ai. 2000,
2001c). The tendency for higher Tc values in the case of lighter elements stems from
the corresponding increase in the p-d hybridization and the reduction of the spin-orbit
coupling. It can be expected that this tendency is not altered by the uncertainties in the
values of the parameters employed for the computation. In particular, if one could introduce
5% ofMn and 3.5 x 1020 cm- 3 of holes into wide-gap semiconductors, such as GaN, ZnO,
and C, these materials should be ferromagnetic at room temperature. The first-principle
calculation also predicts a rather stable ferromagnetism for these materials. The results
show that V, Cr, Fe, Co, or Ni doped ZnO is a half-metallic double-exchange ferromagnet,
Mn doped ZnO is an antiferromagnetic insulator which changes to a ferromagnet by
additional doping of holes, whereas Ti or Cu doped ZnO remains paramagnetic (Sato and
Katayama- Yoshida 2000). It is also predicted from the first-principle calculation that V-,
Cr-, or Mn-doped GaN is ferromagnetic without additional doping (Sato and Katayama-
Yoshida 200lc).
In order to solve the problems of the low solubility of magnetic ions in III-V semicon-
ductors and the difficulty of the carrier control in II-VI semiconductors, modulation-doped
III-VIII-VI superlattice structures have been proposed (Kamatani and Akai 200 Ia). Here, a
II-VI layer serves as the magnetic layer, which can contain a large concentration of Mn, and
III-V barrier layers. where impurities are incorporated. provide carriers to II-VI magnetic
layers. The results of the first principle calculation for a AIAs:C/(Cd.Mn)Te superlattice
shows that the ferromagnetic state is indeed stable for high concentrations of C.
The highest spin and the associated large magnitude of the on-site correlation energy U
account for the divalent character of the Mn atoms in a large variety of environments. This
results. in particular. in a large solubility of Mn in II-VI materials and its acceptor character
in a number of III-V compounds. A question arises about ferromagnetic properties of
semiconductors containing other magnetic components. One should recall in this context
the existence of. e.g., ferromagnetic europium chalcogenides and chromium spinels. In
those compounds, the ferromagnetism is not driven by free carriers. With no doubt, the
availability of intrinsic and n-type tetrahedrally-coordinated ferromagnetic compounds
would enlarge considerably the impact of semiconductor electronics.
Actually, a theoretical suggestion was made that superexchange in Cr-based II-VI
compounds can lead to a ferromagnetic order (Blinowski et al. 1996). High composition
(I(}-25%) of V or Cr doped ZnS, ZnSe. and ZnTe have been predicted by first-principle
calculations to exhibit the ferromagnetism at room temperature even without p- or
n-type doping (Sato and Katayama-Yoshida 2(01). Desirable material properties. such as
divergent magnetic susceptibility and spontaneous magnetization, can also be achieved in
the case of a strong antiferromagnetic super-exchange interaction. The idea here (Dietl
1994) is to synthesize a ferrimagnetic system that would consist of antiferromagnetically
coupled alternating layers containing different magnetic cations, e.g., Mn and Co.
In general terms. the transition metals (TM) other than Mn are no longer always
divalent, they lead to the presence of magnetic levels in the gap, and they are characterized
by a non-zero orbital momentum. These will considerably modify transport and optical
properties as well as enhance the sensitivity to co-doping and illumination. Furthermore,
an increase in magnetic anisotropy as well as an enlargement of the coupling to phonons
and thus a shortening of spin-lattice relaxation time are expected, too. Recent ab initio
calculations of Sato and Katayama-Yoshida (2000) suggest that V. Cr. Fe, Co, and Ni in
ZnO should provide carriers, which owing to the double exchange mechanism generate the
ferromagnetic order. We note that in the case of wide gap II-VI compounds studied so far,
neither of these transition metals (TM) introduces free carriers. However. for sufficiently
high TM concentrations a Mott-Hubbard transition is expected, leading to a transport
through the gap d-states. A co-doping with either shallow acceptors or donors could
make such transport. and the associated exchange interaction. more efficient. Since the
TMs act as deep donors and acceptors, the co-doping of such compounds with shallow
impurities (e.g.• by 0 for Mn in III-V compounds) constitutes a natural way to control
the ferromagnetic couplings (Katayama-Yoshida et al. 2001). Indeed, according to Sato
and Katayama-Yoshida (200 Ib). for Fe. Co, or Ni doped ZnO. the ferromagnetic state is
stabilized by the doping of shallow donors.
10.2. Cautionary remarks

Before discussing experimental results, it is appropriate to enlist difficulties encountered
in assessing properties of new ferromagnetic semiconductors. The well-known difficulty
is the multi-phase character of materials grown by non-equilibrium techniques, such as
MBE. In particular, some phases may consist of ferromagnetic and/or ferromagnetic
precipitations, such as metallic and ferromagnetic MnAs. These precipitations, even if
too small to be detected by x-ray diffraction, can give the dominant contribution to the
total magnetic moment of the sample, particularly at high temperatures. Importantly, the
Curie temperature of the precipitations may not be identical to the tabulated values, and
may depend on their size and the host material. Another source of undesirable magnetic
signals originates often from magnetic impurities residing outside the studied layer, for
instance in the substrate. Since ferromagnetic semiconductors are characterized by colossal
magnetotransport and magnetooptical phenomena, a correlation between semiconductor
and magnetic properties allows one usually to rule out parasitic effects. However, stray
magnetic fields produced by ferromagnetic inclusions or their contribution to charge
transport may constitute a source of ambiguity. Additionally, multi-layer and/or multi-
carrier transport of semiconductor structures, together with localization, surface, and
interface phenomena, may generate strong magnetoresistance effects, usually hard to
separate from spin-related phenomena in the examined material.
10.3. Experimental results

10.3.1. (Ga,Mn)As
As mentioned above, the mean-field Zener model suggests that Tc values above 300 K
could be achieved in, e.g., Gao.9MnO.1 As, if such a large value of x would be accompanied
by a corresponding increase of the hole concentration. The elaboration of an annealing
procedure that increases Tc (Katsumoto et al. 1999; Poshtanik et al. 2001) as well as
a successful implementation of low-temperature atomic layer epitaxy to increase the
Mn composition x (Sadowski et al. 2oo1a) constitute examples of recent encouraging
developments in this direction.
10.3.2. (Ga,Mn)N
As discussed in section 2.4, indications of high temperature ferromagnetism in
(Ga,Mn)N have been reported by Sonoda et al. (2002) and Reed et al. (2001), whose layers
grown by ammonia-MBE or prepared by solid state diffusion show ferromagnetism well
above room temperature. Work is under way to rule out the influence of precipitations
as well as to establish how Tc depends on the Mn and carrier concentration. Possible
mechanisms accounting for the experimental observations have been put forward (Dietl
et al. 2oo1b).
10.3.3. (Cd,Mn)GeP2
Il-VI-V2 chalcopyrite OMS, (Cdl_xMnx)GeP2 was prepared by the solid phase
chemical reaction. Mn vacuum deposition (30 nm) on a single crystal of CdGeP2 and
the reacting process (500°C, 30 min) was carried out in an MBE chamber (Medvedkin
et al. 2000). The Mn/Cd composition ratio decreases rapidly with the depth. The average
MnlCd ratio was determined as 20% for an effective thickness 0.5 JLm by energy
dispersive x-ray analysis. The value Tc: ,...., 320 K of (Cdl-xMn x )GePz was determined by
magnetization measurements. Clear hysteresis in the field dependence of magnetization
and the stripe magnetic domain pattern were observed by magnetic force microscopy
(MFM) even at room temperature. A large Faraday rotation of 5.7 x 104 deg/cm at an
energy gap of CdGePz (1.83 eV) was estimated from the magneto-optical Kerr effect
at room temperature. The energy gap of (Cd,Mn)GePz is two times larger than that of
CdGePz. Photoluminescence indicates also that the introduction of Mn enlarges the energy
gap.
Results of a first principles calculation shows that the antiferromagnetic state is more
stable than the ferromagnetic state, and that the energy gap decreases with the Mn
composition (Zhao, Y.-J.et al. 200 Ib). The reason for the discrepancies between theoretical
expectations and experimental results is not clear; it may stem from the substitution of
Ge for Mn in surface-doped samples. More recent plane-wave pseudopotential and KKR-
CPA calculations show that the intrinsic defects are responsible for the stabilization of the
ferromagnetic state (Mahadevan and Zunger 2002; Kamatani and Akai 200 Ib).
10.3.4. Co doped no,

It has been shown by means of magnetization measurements that anatase and rutile (two
forms of TiOz) doped with several percents of Co are ferromagnetic at room temperature
(Matsumoto et al. 200 I, 200 I). Co doped TiOz has been synthesized by laser ablation
MBE employing a combinatorial method, in which a series of thin films with different
compositions can be grown on a single substrate while keeping other growth parameters
virtually unchanged (Ohno 2001). No ferromagnetic order has been found for other form
of TiOz (blookite) and for other transition metals.
10.3.5. Co doped zoo

The magnetic properties of n-type transition-metal doped ZnO have been investigated
(Veda, K. et al. 200 I). The material is synthesized by the pulsed laser deposition, and 1%
of Al is added to produce n-type conduction. Co, Ni, Cr, or Mn serves as a source of the
magnetic spins. ZnO with 5% of Mn, Ni, or Co shows an antiferromagnetic behavior with
Neel temperatures of 310, 350, and 270 K, respectively. On the other hand ZnO with 5-
25% of Co exhibits ferromagnetic (or weak-ferromagnetic) behavior, which is confirmed
by magnetization measurements. The magnetic properties depend on carrier concentration
and mobility. Samples with higher carrier concentrations and mobilities show a stable
ferromagnetism, otherwise spin-glass behavior is observed.
V doped ZnO (V composition 0.05-0.15) with higher conductivity shows ferromagnetic
behavior at room temperature, whereas that with lower conductivity is nonmagnetic (Saeki
et al. 200 1).
10.3.6. Zinc-blende CrAs and CrSb

Thin epitaxial films (less than 3 nm) of CrAs and CrSb with zinc-blende structure can be
grown on GaAs substrates by MBE. Their Tc exceeds 400 K (Akinaga et al. 2000c; Zhao
et al. 200 1b). A zinc-blende structure is confirmed by in-situ RHEED collected during
the growth and ex-situ cross-sectional transmission electron microscopy (TEM). The
preparation and properties of zinc-blende MnAs have also been investigated (Okabayashi
et al. 2001d; Hazama et al. 2(01). According to first-principle calculations (Shirai 2(01)
such materials possess a half-metallic electronic structure. Hence. being compatible with
the existing semiconductor electronics. these systems appear to be promising spin injectors.
11. Summary and outlook
Ferromagnetic semiconductors based on III-V compounds can be incorporated into III-

V based epitaxial structures allowing one to explore spin-dependent phenomena. not
available in structures made of nonmagnetic semiconductors alone. There are two major
directions for the exploration of spin-dependent phenomena in magnetic semiconductors.
One concerns with new functionalities and materials for classical devices. such as
optical isolators and modulators, magnetic sensors and memories. This direction requires
systems with Tc above room temperature. The other direction is quantum related:
new developments in magnetic III-V heterostructures combined with recent progress in
coherent manipulation of carriers (Kikkawa and Awschalom 1999; Malajovich et al. 2000.
200 1; Salis et al. 200 Ib) and nuclear spins (Kikkawa and Awschalom 2000; Salis et al.
2001a) pave the way for future quantum information technologies that will utilize spins in
semiconductors (Kane 1998; Loss and DiVincenzo 1998; Das Sarma et al. 2000; Vrijen
et al. 2(00). Ferromagnetic III-V heterostructures are excellent media to explore this new
field of semiconductor physics and technology. where both charge and spins play critical
roles. With no doubt. however. there is plenty of room for new ideas how to explore
outstanding properties of magnetic semiconductors. which have not yet been exploited.
Acknowledgements
The authors thank many collaborators for fruitful discussion. especially colleagues at
Tohoku University. The work at Tohoku University was supported partly by the Japan
Society for the Promotion and Ministry of Education. Culture. Sports. Science and
Technology. Japan. and the work at Polish Academy of Sciences was supported partly
by Foundation for Polish Science.
References
Abe, E.. F. Matsukura, H. Yasuda, Y. Ohno and Akiba, N., F. Matsukura, A. Shen, Y. Ohno, H. Ohno,
H. Ohno, 2000, Physica E 7, 981. A. Oiwa, S. Katsumoto and Y. lye, 199830 Appl.
Abe, E., K. Sato, F. Matsukura, Y. Ohno and H. Ohno, Phys. Lett. 73, 2122.
2001, Extend Abstracts (The 48th Spring Meeting, Akiba, N., F. Matsukura, Y. Ohno, A. Shen, K. Ohtani,
The Japan Society of Applied Physics) p. 1322. T. Sakon, M. Motokawa and H. Ohno, 1998b, Phys-
ica B 2S~2S8, 561.
Abolfath, M., T. Jungwirth, J. Brum and A.H. Mac-
Akiba, N., D. Chiba, K. Nakata, F. Matsukura, Y. Ohno
Donald, 2001, Phys. Rev. B 63, 054418.
and H. Ohno, 200030 1. Appl. Phys. 87, 6436.
Adhikari, T., and S. Basu, 1984, Jpn. J Appl. Phys., Akiba, N.• F. Matsukura, T. Dietl. K. Ohtani, Y.Ohno
Part I, 33, 4581. and H. Ohno, 2000b. presented at the Int. Conf. on
Akai, H., 1998, Phys, Rev. Lett. 81, 3002. Physics and Application of Spin-Related Phenom-
ena in Semiconductors. Sendai, Japan. Sep. 13-15. eds G. Landwehr and W. Ossau (World Scientific.
2000. Singapore) p. 861.
Akinaga, H.. S. Basu, M. Mizuguchi, T. Manago Bosselli, M.A .• A. Ghazali and l.C, da Cunha Lima.
and M. Shirai. 2000a, Extend Abstracts (The 61st 2000. Phys. Rev. B 62, 8895.
Autumn Meeting. The Japan Society of Applied Casey. H.C .• Jr.• D.D. Sell and K.W. Wecht. 1975. J.
Physics) p. 1138. Appl. Phys, 46. 250.
Akinaga, H.• S. Nemeth. J. De Boeck. H. Bender. Chao. C.Y.-P.. and S.L. Chuang. 1991. Phys. Rev. 43.
G. Borghs, H. Ofuchi and M. Oshima. 2000b. Appl. 7027.
Phys. Lett. 77. 4377. Chapman. R.A .• and W.G. Hutchinson. 1967. Phys,
Akinaga, H.• T. Manago and M. Shirai. 2000c. Jpn. J. Rev. Lett. 18. 443.
Appl. Phys. Part 2. 39. Ll118. Chattopadhyay, A.•S. Das Sarma and AJ. Millis. 2001.
Aliyev, M.I..I.S. Dadashev and G.I. Safaraliyev, 1980. Phys. Rev. Lett. 87.227202.
Phys. Met. MetaIlogr. 49. 166. Chazalviel, J.-N .• 1975. Phys. Rev. B 11.3918.
Alrnesh, N.• and B. Goldstein. 1962. Phys. Rev. 128. Chen. X.. K.P. Mooney, G. Comenescu, L. Guo.
1568. B.D. McCombe. Y. Sasaki. X. Liu, SJ. Poteshnik,
Al'tshuler, B.L.. and A.G. Aronov, 1985. in: Electron- P. Sciffer and J.K. Furdyna, 2000. APS March 2000
electron interaction in disordered conductors Meeting. 20-24 Mar. 2000. Minneapolis. USA.
(North-Holland. Netherlands) pp. 1-153. Chiba, D.• N. Akiba, F. Matsukura, Y. Ohno and
Ando, K., T. Hayashi. M. Tanaka and A. Twardowski.
H. Ohno, 2000. Appl. Phys. Lett. 77. 1873.
1998. 1. Appl. Phys. 83. 6548. Chien. C.L.. and C.w. Westgate. 1980. The Hall effect
and Its Applications (Plenum Press. New York).
Ando, M.• Y. Kanemitsu, K. Takamura, F. Matsukura
and H. Ohno, 1999. Fifth Symposium on Physics
Coey, J.M.D .• M. Viret and S. von Molnar. 1999. Adv.
Phys.48. 167.
and Application of Spin-Related Phenomena in
Crepieux, A.• and P. Bruno, 2001. cond-matlOI01376.
Semiconductors. 16-17 Dec. 1999. Sendai, Japan.
Das Sarma. S.• J. Fabian. X. Hu and I. Zutic, 2000. Su-
p.I90.
perlattice and Microst, 27. 285.
Arata. I., Y. Ohno, F. Matsukura and H. Ohno, 2001.
De Boeck. J.• R. Oesterholt, A. Van Esch, H. Bender.
Physica E 10. 288.
e. Bruynseraede, C. Van Hoof and G. Borghs, 1996.
Arrott, A.• 1957. Phys, Rev. 108. 1394.
Appl. Phys. Lett. 68. 2744.
Ball. P.• 2000. Nature 404, 918.
De Boeck. J.• and G. Borghs, 1999. Phys. World. No 4.
Baron. T.• S. Tatarenko, K. Sarninadayer, N. Magnea
p.27.
and J. Fontenille, 1994. Appl. Phys. Lett. 65. 1284.
DeSirnone. D., C.E.e. Wood and C.A. Evans Jr.• 1982.
Baxter. D.V.• D. Ruzmetov, 1. Scherschligt, Y. Sasaki. J. Appl. Phys. 53. 4938.
X. ue, J.K. Furdyna and c.a. Milke. 2002. Phys. Dietl. T.. 1994. (Diluted) Magnetic Semiconductors.
Rev. B. 65. 212407. in: Handbook of Semiconductors. ed. T.S. Moss.
Belitz. D.• and T.R. Kirkpatrick. 1994, Rev. Mod. Phys. Vol. 3B (North-Holland, Amsterdam).
57.287. Dietl. T.• A. Haury and Y. Merle d'Aubigne, 1997.
Benoit 11 la Guillaume. C; D. Scalbert and T. Dietl. Phys. Rev. B 55. R3347.
1992. Phys, Rev. B 46. 9853. Dietl. T., 1. Cibert, D. Ferrand and Y. Merle d' Aubigne,
Beschoten, B.• P.A. Crowell. I. Malajovich, D.D. Aw- 1999. Mater. Sci. Eng. B 63. 103.
shalom. F. Mastukura, A. Shen and H. Ohno, 1999. Dietl. T.• H. Ohno, F. Matsukura, J. Cibert and D. Fer-
Phys. Rev. Lett. 83. 2073. rand. 2000. Science 287.1019.
Bhatt. R.N .. and X. Wan. 1999. Intern. 1. Modem. Phys, Dietl. T.. J. KOnig and A.H. Maclsonald, 200la. Phys.
C 10.1459. Rev. B 64. 241201.
Bhatt. R.N .• and M. Berciu, 2001. Phys. Rev. Lett. 87. Dietl. T.• F. Matsukura and H. Ohno, 200lb. cond-
10723. matlOI09145. Phys, Rev. B. to be published.
Bhattacharjee, A.K.. and e. Benoit Ii la Guillaume. Dietl. T.. H. Ohno and F. Matsukura, 200lc. Phys. Rev.
2000, Solid State Commun. 113. 17. 63.195205.
Bither. T.A .• and W.H. Cloud, 1965. J. Appl. Phys. 36. Dorlrijn, 1.w.F.. 1976. Philips Res. Repts. 31. 287.
1501. Endo, T.. T. Slupinski, S. Yanagi, A. Oiwa and
Blinowski, J.• P. Kacman and J.A. Majewski. 1996. H. Munekata, 2001. Seventh Symposium on the
Phys. Rev. B 53. 9524. Physics and Application of Spin-Related Phenom-
Blinowski, 1.. P. Kacman and J.A. Majewski. 1997. in: ena in Semiconductors. 17-18 Dec. 2001, Yoko-
High Magnetic Fields in Semiconductor Physics II. hama. Japan. p. 33.
Edwards. P.P.• and M.I. Sienko. 1978. Phys. Rev. B 17. Guo. S.P.. H. Ohno, A. Shen, F. Matsukura and
2575. Y.OOOo. 1998, Appl. Surf. Sci. 130-132,797.
Edwards. P.P.• and C.N.R. Rao (eds), 1995. Metal- Guo, S.P.. A. Shen, F. Matsukura, Y. 0000 and
Insulator Transitions Revisited (Taylor and Francis. H. 0000. 1999. 1. Cryst. Growth, 2011202. 684-
London). 688.
Eggenkamp, P.T.I.. H.I.M. Swagten, T. Story. Guo, S.P., A. Shen, H. Yasuda, Y. 0000. F. Matsukura
V.I. Lhvinov, C.H.W. Swuste and W.J.M. de Jonge, and H. 0000. 2000. J. Cryst. Growth 208. 799.
1995. Phys. Rev. B 51. 15250. Haneda, S.. M. Yamamura, Y. Takatani, K. Hara.
Fedorych, O.M., E.M. Hankiewicz, Z. Wilamowski S. Harigae aod H. Munekata, 2oooa, Jpn. 1. Appl.
and J. Sadowski. 2001. cond-matlOl06227 (submit- Phys. 39. L9.
ted to Phys. Rev. B). Haneda, S.• H. Munekata, Y. Takatani aod S. Koshi-
Fernandez-Rossier, J.• and L.I. Sham. 2001, Phys. Rev. hara, 2000b. 1. Appl. Phys. 87.6445.
B 64. 235323. Haneda, S., S. Kodhihara and H. Munekata, 2001,
Ferrand. D.. 1. Cibert, A. Wasiela, C. Bour- Physica E 10.437.
gognon, S. Tatarenko, G. Fishman. S. Kolesnik, Hansen. L., D. Ferrand. G. Richter. M. Thicrley.
1. Jaroszyiiski, T. Dietl. B. Barabara and D. Dufeu, V. Hock. N. Schwarz. G. Reuscher, G. Scmidt,
2000.1. Appl. Phys. 87, 6451. A. Waag and L.W. Molenkarnp. 2001. cond-
Ferrand. D., J. Cibert, A. Wasiela, C. Bpur- matlOl07619; submitted to Appl. Phys. Lett.
gognon, S. Tatarenko, G. Fishman. T. Andrearczyk, Harris. J.G.E.. D.D. Awshalom. F. Matsukura,
J. Jaroszyriski, S. Kolesnik, T. Dietl. B. Barbara and H. 0000, K.D. Maranowski and A.C. Gossard,
D. Dufeu, 2001. Phys. Rev. B 63. 085201. 1999, Appl. Phys. Lett. 75. 1140.
Fiederling, R.. M. Keirn. G. Reuscher, W. Ossau, Hartmann. Th .• M. Lampalzer, W. Stolz. K. Megges,
G. Scmidt, A. Waag and L.W. Molenkamp, 1999. L. Lorberth, P.I. Klar and W. Heimbrodt, 2000. Thin
Nature 402. 787. Solid Films 364. 209.
Fisher. M.E .• S.-K. Ma and B.G. Nickel. 1972, Phys. Hashimoto. M.. Y.-K. Zhou. M. Kanamura and
Rev. Lett. 29.917. H. Asahi, 2002. to be published in Solid State Com-
Frolich, H.• and ER.N. Nabarro, 1940. Proc. R. Soc. mun.
London Ser. A 175. 382. Hashimoto. Y., T. Hayashi. S. Katsumoto and Y. lye.
Fukumura, T.. T. Shono, K. Inaba, T. Hasegawa. 2002. J. Cryst. Growth 237-239.1334.
H. Koinuma, E Matsukura and H. Ohno, 2001, Hass, K.C.. 1991. in: Semimagnetic Semicondic-
Physica E 10. 135. tors and Diluted Magnetic Semiconductors. eds
Fumagalli, P., and H. Munekata, 1996. Phys. Rev. B 53. M. Averous and M. Balkanski (Plenum. London.
15045. 1991).
Furdyna, J.• and J. Kossut (eds), 1988. Semiconductor Haury. A.• A. Wasiela, A. Arnoult, J. Cibert,
and Semi metals. Vol. 25 (Academic. New York). S. Tatarenko, T. Dietl and Y. Merle d'Aubigne,
Gaj. 1.A.• R. Planel and G. Fishman. 1979. Solid State 1997. Phys. Rev. Lett. 79, 511.
Commun. 29. 435. Hayashi, T.• M. Tanaka. T. Nishinaga, H. Shimada.
Galazka, R.R.. 1977. Postepy Fyzyki 28. 601. H. Tsuchiya and Y. Ohtsuka, 1997a. J. Cryst.
Gayrnann, A.• H.P. Geserich and H.V. Lohneysen, Growth 175/176. 1063.
1995. Phys. Rev. B 52. 16486. Hayashi, T.• M. Tanaka, K. Seto, T. Nishinaga and
Gebicki, W.. J. Strzeszewski, G. Kalmer, T. Szyszko K. Ando, 1997b. Appl. Phys. Lett. 71. 1825.
and S. Podsiadlo, 2000, Appl. Phys. Lett. 76. 3870. Hayashi. T.• M. Tanaka, K. Seto, T. Nishinaga, H. Shi-
GI6d. P.•T. Dietl. M. Sawicki and I. Miotkowski, 1994. mada and K. Ando, 1998. J. Appl. Phys. 83. 6551.
Physics B 194-196.995. Hayashi. T.• H. Shimada, H. Shimizu aod M. Tanaka,
Goodenough. J.B .• 1969. 1. Phys, Chern. Solids 30, 1999. J. Crystal Growth 2011202. 689.
261. Hayashi. T.• S. Katsumoto, Y. Hashimoto. A. Endo,
Grandidier, B.. 1.P. Nys, C. Delerue, D. Stievenard, M. Kawamura, M. Zalalutdinov and Y. lye. 2000.
Y. Higo and M. Tanaka. 2000. Appl. Phys. Lett. 77. Physica B 284-288. 1175.
4001. Hayashi. T.• Y. Hashimoto. S. Katsumoto and Y. lye,
Guha, S.• and H. Munekata, 1993, J. Appl. Phys. 74. 2001. Appl. Phys. Lett. 78,1691.
2975. Hazama, Y.. K. Yamamoto, A. Nagashima and
Gummich, U.• and I.C. da Cunha Lima. 1990. Solid J. Yoshino. 2001. Seventh Symposium on Physics
State Commun. 76. 831. and Application of Spin-Related Phenomena in
Semiconductors. 17-18 Dec. 2001. Sendai, Yoko- Y. Harada. S. Shin and K. Hirakawa. 2001. Mater.
hama. p. 160. Sci. Eng. B 84. 88.
Heimbrodt, W.• Th. Hartmann. PJ. Klar, M. Lam- Kawakami. R.K .. E. Hohnston-Halperin, L.F. Chen.
palzer, W. Stolz. K. Volz. A. Schaper. W. Treut- M. Hanson, N. Guebels, J.S. Speck. A.C. Gossard
mann. H.-A. Krug von Nidda. A. Loidl. T. Ruf and and D.O. Awshalom, 2000. Appl. Phys. Lett. 77.
V.F. Sapega, 2001, Physica E 10. 175. 2379.
Henriques. A.B .• SA Obukhov, N.F.Yr. Oliveira and Kawakami. R.K.. Y. Kato, M. Hanson. I. Malajovich.
V.A. Sanina, 1999, Pis'rna v ZhETF 69.358. J.M. Stephens. E. Johnston-Halperin, G. Salis.
Higo, Y.• H. Shimizu and M. Tanaka. 200la. Physica E A.C. Gossard and D.O. Awshalorn, 2001. Science
10.292. 294. 131.
Higo, Y.. H. Shimizu and M. Tanaka. 200lb. 1. Appl. Kenett, M.P.. M. Berciu and R.N. Bhatt. 2001. cond-
Phys. 89. 6745. matlO102315.
Hirakawa. K.• A. Oiwa and H. Munekata, 2001. Phys- Kepa, H.. 1. Kutner-Pielaszek, A. Twardowski.
ica E 10. 215. c.F. Majkrzak, 1. Sadowski. T. Story and
Hirsch. J.E .• 1999. Phys. Rev. Lett. 83. 1834. T.M. Giebultwicz, 2001. Phys. Rev. B 64. 121302.
Ilegems, M.. R. Digle and L.w. Rupp Jr.• 1975. J. Appl. Kikkawa, 1.M.• and D.O. Awschalom, 1999. Nature
Phys. 46. 3059. 397.139.
Inoue. J.• S. Nonoyama and H. Itoh, 2000. Phys. Rev. Kikkawa, J.M .• and D.O. Awschalom, 2000. Science
Lett. 85.4610. 287.473.
Johnston-Halperin, E .• D. Lofgreen, R.K. Kawakami. Kohda, M.. Y. Ohno, K. Takamura, F. Matsukura and
D.K. Young. I. Coldren. A.C. Gossard and D.O. Aw- H. Ohno, 2001. Jpn. J. Appl. Phys. 40. L1274.
shalom. 2002. Phys. Rev. B 65. 041306. Konig. J.. H.-H. Lin and A.H. MacDonald. 2000. Phys.
Jonker. J.T.. Y.D. Park. B.R. Bennett. H.D. Cheong. Rev. Lett. 84. 5628.
G. Kioseoglow and A. Petrou, 2000. Phys. Rev. B Konig. J.• H.-H. Lin and A.H. MacDonald. 2001. Phys-
62.8180. ica 10. 139.
Jungwirth. T.• W.A. Atkinson. B.H. Lee and A.H. Mac- Koshihara, S.• A. Oiwa, M. Hirasawa, S. Katsumoto,
Dolnald. 1999. Phys. Rev. B 59. 9818. Y.lye. C. Urano, H. Takagi and H. Munekata, 1997.
Jungwirth. T.. Q. Niu and A.H. MacDonald. 2002. Phys. Rev. Lett. 78.4617.
Phys. Rev. Lett. 88. 207208. Kossacki, P.. D. Ferrand. A. Amoult, J. Cib-
Kacman, P.• 2001. Semicond. Sci. Technol. 16. R25. ert, S. Tatarenko, A. Wasiela, Y. Merle
Kamatani, T.• and H. Akai, 2oola. Physica E 10. 157. d'Aubigne, K. Swiatek, M. Sawicki. J. Wro-
Kamatani, T.• and H. Akai, 2oolb. Seventh Sympo- bel. W. Bardyszewski and T. Dietl. 2000. Physica E
sium on Physics and Application of Spin-Related 6.709.
Phenomena in Semiconductors. 17-18 Dec. 2001. Kossut, J.. and W. Dobrowolski. 1993. in: Handbook
Sendai, Japan. p. 124. of Magnetic Materials. K.HJ. Buschow (ed.), Vol. 7
Kanamura, M.• Y.K. Zhou, S. Okumura. K. Asami, (North-Holland. Amsterdam).
M. Nakajima. H. Harima and H. Asahi, 2002. Jpn. Kotani, T.. 2000. J. Phys. Condo Matter 12. 2413.
1. Appl. Phys. 42. 1019. Krebs. J.J .• and G.H. Stauss. 1977. Phys. Rev. B 16.
Kane. B.E .• 1998. Nature 393. 133. 971.
Kasuya, T.. and A. Yanase. 1968. Rev. Mod. Phys. 40. Kreisel. 1.. W. Ulrici. M. EI-Metoui. A.-M. Vasson,
684. A. Vasson and A. Gavaix, 1996. Phys. Rev. B 54.
Katayama-Yoshida. H.• R. Kato and T. Yamamoto. 10508.
2001. J. Cryst. Growth. 231. 428. Krol, A.• Y.L. Soo, S. Huang. Z.H. Ming, Y.H. Kao,
Kato, R.. and H. Katayama-Yoshida. 1999. Fifth Sym- H. Munekata and LL Chang. 1993. Phys. Rev. B
posium on Physics and Application of Spin-Related 47.7187.
Phenomena in Semiconductors. 16-17 Dec. 1997. Kuivalainen, P.• 2001. Phys. Stat. Sol. (b) 227. 449.
Sendai. Japan. p. 233. Kuivalainen, P.• and A. Hovinen, 2002. J. Phys. D 35.
Katsumoto, S.• 1999. unpublished. 48.
Katsumoto, S.• A. Oiwa, Y. lye. H. Ohno, F. Matsukura, Kulatov, E.. H. Nakayama. H. Mariette. H. Ohta and
A. Shen and Y. Sugawara, 1998. Phys. Status Solidi Yu.A. Uspenskii, 2001. unpublished.
B 205.115. Kuroiwa, T.. T. Yasuda. F. Matsukura, A. Shen,
Katsumoto, S.. T. Hayashi. Y. Hashimoto. Y. lye. Y. Ohno, Y. Segawa and H. Ohno, 1998. Electron.
Y. Ishiwata, M. Watanabe. R. Eguchi, T. Takeuchi. Lett. 34. 190.
Kuwabara, S., K. Ishii, S. Haneda, T. Kondo and Matsuda, Y.H.• T. Ikaida, N. Miura, M.A. Zudov,
H. Munekata. 200la. Physica E 10. 233. J. Kono and H. Munekata, 2001. Physica E 10. 219;
Kuwabara, S.• T. Kondo. T. Chikyow, P. Ahmet and Matsuda, Y.H.• T. Ikaida, N. Miura, Y. Hashimoto.
H. Munekata, 200lb. Jpn. J. Appl. Phys. 40. L727. S. Katsumoto, J. Kono, M.A. Zudov, G.D. Sanders,
Lee. B.• T. Jungwirth and A.H. MacDonald. 2000, CJ. Stanton and H. Munekata. Seventh Symposium
Phys. Rev. B 61. 15606. on the Physics and Application of Spin-Related
Leroux-Hugon, P.• 1973, in: New Developments in Phenomena in Semiconductors, 17-18 Dec., 2001.
Semiconductors. eds P.R. Walace. R. Harris and Yokohama, Japan. p. 41.
MJ. Zuckennann (Noordhoff, Leyden). Matsukura, F.• 1997. unpublished.
Leroux-Hugon, P.• and A. Ghazali, 1972. J. Phys. C 5. Matsukura, F., A. Shen, Y. Sugawara, T. Omiya,
1072. Y. Ohno and H. Ohno, 1998a, Presented at the
Linnarson, M.• E. Janzen. B. Monemar, M. KJevennan 25th Int. Symp. Compound Semiconductors, 12-16
and M. Thilderkvist, 1997. Phys. Rev. B 55. 6938. October 1998. Nara, Japan; Proc. 25th Int. Symp.
Litvinov, V.1. and Y.K. Dugaev, 2001, Phys. Rev. Lett. Compound Semiconductors. Institute of Physics
86.5593. Conference Series. No. 162 (lOP Publishing Ltd.
Liu, S.• K. Karrai, F. Dunmore. H.D. Drew. R. Wilson Bistrol, 1999) p. 547.
and G.A. Thomas. 1993, Phys. Rev. B 48. 11394. Matsukura, F.. H. Ohno, A. Shen and Y. Sugawara,
Liu, X.• Y. Sasaki and 1.K. Furdyna, 2001. Appl. Phys. 1998b. Phys. Rev. B 57. R2037.
Lett. 79. 2414. Matsumoto. Y., M. Murakami. T. Shono, T. Hasegawa.
Liu, X.C .• D. Heiman. 1. Hao and K.C. Hsieh. 1995. in: T. Fukumura, M. Kawasaki, P. Ahmet, T. Chikyow,
Proceedings International Conference on Physics S. Koshihara and H. Koinuma, 2001. Science 291.
of Semiconductors in High Magnetic Fields. ed. 854.
D. Heiman (World Scientific, Singapore) p. 658. Matsumoto. Y.. R. Takahashi. M. Murakami. T. Koida,
Look.D.e.. 1991, J. Appl. Phys. 70. 3148. X.-J. Fan, T. Hasegawa, T. Fukumura, M. Kawasaki.
Loss. D.• and D.P. Divincenzo. 1998. Phys. Rev. A 57. S. Koshihara and H. Koinuma, 2001, Jpn, J. Appl.
120. Phys. 40. Ll204.
Louriero da Silva. M.A. Boselli, LC, da Cunha Lima, Mauger. A., and e. Gotard, 1986, Phys. Rep. 141.51.
X.F. Wang and A. Ghazali, 2001, Appl. Phys. Lett. Medvedkin, G.A .• T. Ishibashi, T. Nishi. K. Hayata,
79.3305. Y. Hasegawa and K. Sato, 2000. Jpn. J. Appl. Phys.
Luysberg, M., H. Sohn, A. Prasad. P. Specht. 39. L949.
Z. Liliental-Weber, E.R. Weber. 1. Gebauer and Methfessel, S.• 1965. IEEE Trans. Mag. I. 144.
R. Krause-Rehberg, 1998,1. Appl. Phys. 83. 561. Methfessel, SJ., and F. Holtzberg, 1966. US Patent
Lyu, P., and K. Moon, 2001, Phys. Rev. B 64. 035201. 3.271.709.
Ma, S.-K .• 1976, Modem Theory of Critical Phenom- Methfessel, S., and D.C. Mattis. 1968, in: Encyclope-
ena (W.A. Benjamin, Reading). dia of Physics. Vol. XVIII/I. Magnetism. Magnetic
Mac. W.• A. Twardowski and A.M. Hennel, 1994, in: Semiconductors. ed. H.PJ. Wijn (Springer-Verlag.
Proceedings of the 22nd International Conference Berlin) pp. 389-562.
on Physics of Semiconductors. ed. D.J. Lockwood Mizokawa, T.• and A. Fujimori, 1993. Phys. Rev. B 48,
(World Scientific. Singapore. 1995) p. 1569. 14150.
Mahadevan, P.• and A. Zunger, 2002. Phys. Rev. Lett. Moriya, R.• H. Munekata, T. Kondo and A. Oiwa, 2002.
88, 047205 (2002). J. Cryst. Growth 237-239. 1344.
Malajovich, I., J.M. Kikkawa, D.O. Awschalom. Munekata, H.• 1995. Mater. Sci. Eng. B 31,151.
U. Berry and N. Samarth, 2000. Phys. Rev. Lett. Munekata, H., H. Ohno, S. von Molnar. A. Segmilller,
84.1014. LL Chang and L. Esaki, 1989. Phys, Rev. Lett. 56.
Malajovich, I.. U. Berry, N. Samarth and 777.
D.O. Awschalom, 2001. Nature 411. 770. Munekata, H.• H. Ohno, S. von Molnar. A. Harwit,
Mldek. J.• and F. Maka, 2001, Acta Phys. Polon. A 100. A. Segmilller and L.L. Chang. 1990. J. Vac. Sci.
319. Technol. B 8. 176.
Masterov, V.F., K.F. Shtelmakh and M.N. Barbashov, Munekata H.• H. Ohno, R.R. Ruf, R.I. Gambino and
1988, Fiz. Tech. Poluprovodn. 22.654 [Sov. Phys. L.L. Chang. 1991. J. Cryst. Growth 111, 1011.
Semicond. 22. 408). Munekata H.• T. Penny and L.L. Chang. 1992, Surf.
Matsuda. Y.H., H. Arimoto, N. Miura. A. Twardowski. Sci. 267. 342.
H. Ohno, A. Shen and F. Matsukura, 1998. Physica Munekata, H.. A. Zaslavsky, P. Fumagalli and
B~258.565. R.I. Gambino. 1993. Appl. Phys. Lett. 63. 2929.
Munekata, H., T. Abe, S. Koshihara, A. Oiwa, M. Hira- Ohno, H.. F. Matsukura and Y. Ohno, 2001. Solid Stale
sawa, S. Katsumoto, y. lye, C. Urano and H. Takagi, Commun. 119.281.
1997,1. Appl. Phys. 81,4862. Ohno, Y., D.K. Young, B. Beshoten, F. Matsukura,
Nagai, Y.. T. Kunimoto, K. Nagasaka, H. Nojiri, H. Ohno and D.D. Awschalom, 1999. Nature 402.
M. Motokawa, F. Matsukura, T. Dietl and H. Ohno, 790.
2001, Jpn. 1. Appl. Phys. 40, 6231. Ohno, Y., I. Arata. F. Matsukura, K. Ohtani, S. Wang
Nishikawa, Y., Y. Satoh and 1. Yoshino, 1997, Sec- and H. Ohno, 2000, Appl. Surf. Sci. 159/160, 308.
ond Symposium on Physics and Application of Spin Ohno, Y.• I. Arata, F. Matsukura and H. Ohno, 2001,
Related Phenomena in Semiconductors, 27-28 Jan. Physica E, to be published.
1997, Sendai, Japan, p. 122. Ohya, E., H. Shimizu, Y. Higo, 1. Sun and M. Tanaka,
Nojiri, H., M. Motokawa, S. Takeyama, F. Matsukura 2001, Jpn. J. Appl. Phys. 41, L24.
and H. Ohno, 1998, Physica B 256-258, 569. Oiwa, A., S. Katsumoto, A. Endo, M. Hirasawa, Y. lye.
Nonoyama, S., and 1. Inoue, 2001, Physica E 10, 283. H. Ohno, F. Matsukura, A. Shen and Y. Sugawara,
Obukhov, SA, 1993, Solid State Commun. 88. 255. 1997, Solid Slate Commun. 103,209.
Obukhov, SA, 1996, Proceedings of 23rd Interna- Oiwa, A., S. Katsumoto, A. Endo, M. Hirasawa, Y. lye,
tional Conference on the Physics of Semiconductors F. Matsukura, A. Shen, Y. Sugawara and H. Ohno,
(World Scientific, Singapore) pp. 99-102. 1998a, Physica B 249-251, 775.
Obukhov, SA, and N.J. Pepic, 1989, Solid State Com- Oiwa, A., S. Katsumoto, A. Endo, M. Hirasawa, Y. lye,
mun. 70, 103. H. Ohno, F. Matsukura, A. Shen and Y. Sugawara,
Ofuchi, H., M. Oshima, M. Tabuchi, Y. Takeda, H. Ak- 1998b, Phys. Status Solidi b 205, 115.
Oiwa, A., A. Endo, S. Katsumoto, Y. lye, H. Munekata
inaga, S. Nemeth. 1. De Boeck and G. Borghs,
and H. Ohno, 1999, Phys. Rev. B 59, 5826.
200la, Appl. Phys. Lett. 78, 2470.
Oiwa, A., T. Siupinski and H. Munekata, 2001, Appl.
Ofuchi, H., T. Kubo, M. Tabuchi, Y. Takeda, F. Mat-
Phys. Lett. 78. 518.
sukura, S.P. Guo, A. Shen and H. Ohno, 200lb, J.
Oiwa, A., Y. Mitsumori, R. Moriya, T. Siupinski and
Appl. Phys. 89, 66.
H. Munekata, 2002, Phys. Rev. Lett. 88, 137202.
Ogawa, T., M. Shirai, N. Suzuki and I. Kitagawa, 1999,
Okabayashi, J.• A. Kimura, O. Rader, T. Mizokawa,
J. Magn. Magn. Mater. 196-197,428.
A. Fujimori, T. Hayashi and M. Tanaka. 1998, Phys.
Ohldag, H., V. Solinus, F.U. Hillebrecht, J.B. Goed-
Rev. B 58, R421 I.
koop, M. Finazzi, F. Matsukura and H. Ohno, 2000,
Okabayashi, J., A. Kimura, T. Mizokawa, A. Fujimori,
Appl. Phys. Lett. 76, 2928.
T. Hayashi and M. Tanaka, 1999, Phys. Rev. B 59,
Ohno, H., 1998, Science 281, 951.
R2486.
Ohno, H., 1999, J. Magn. Magn. Mater. 200, 110. Okabayashi, J., A. Kimura, O. Rader, T. Mizokawa,
Ohno, H., 2001, Science, 291,840. A. Fujimori, T. Hayashi and M. Tanaka, 2001a,
Ohno, H., H. Munekata, S. von Molnar and Physica E 10, 192.
L.L. Chang, 1991, J. Appl. Phys. 69, 6103. Okabayashi, J.• A. Kimura, O. Rader, T. Mizokawa,
Ohno, H.• H. Munekata, T. Penny, S. von Molnar and A. Fujimori, T. Hayshi and M. Tanaka, 200lb, Phys.
L.L. Chang, 1992, Phys. Rev. Lett. 68, 2664. Rev. B 64, 125304.
Ohno, H.. A. Shen, F. Matsukura, A. Oiwa, A. Endo, Okabayashi, J., K. Ono, T. Mano, M. Mizuguchi,
S. Katsumoto and Y. lye, 1996a, Appl. Phys. Lett. H. Horiba, S. Nakazoe, T. Kihara, K. Nakamura,
69,363. H. Kiwata, A. Fujimori and M. Oshima, 200lc, Ex-
Ohno, H., F. Matsukura, A. Shen, Y. Sugawara, tend Abstracts (The 48th Spring Meeting, The Japan
A. Oiwa, A. Endo, S. Katsumoto and Y. lye, 19%b. Society of Applied Physics) p. 1325.
in: Proceedings of the 23rd International Confer- Okabayashi, 1., K. Ono, M. Mizuguchi, M. Yamada,
ence on Physics of Semiconductors, eds M. Schef- A. Fujirnori, M. Oshima and H. Akinaga, 200ld,
fler and R. Zimmermann (World Scientific, Singa- Seventh Symposium on Physics and Application of
pore) pp. 405-408. Spin-Related Phenomena in Semiconductors, 17-18
Ohno, H., N. Akiba, F. Matsukura, A. Shen, K. Ohtani Dec. 2001, Yokohama, Japan, p. 147.
and Y. Ohno, 1998, Appl. Phys. Lett. 73, 363. Okazawa, D., K. Yamamoto and J. Yoshino, 1997,
Ohno, H., D. Chiba, F. Matsukura, T. Omiya, E. Abe, Third Symposium on Physics and Application of
T. Dietl, Y. Ohno and K. Ohtani, 2000, Nature 408, Spin-Related Phenomena in Semiconductors, 16-17
944. Dec. 1997, Sendai, Japan, p. 212.
Ohno, H.• and F. Matsukura, 2001. Solid State Com- Okazawa, D., K. Yamamoto, A. Nagashima and
mun. 117, 179. 1. Yoshino, 2001, Physica E 10, 229.
Omiya, T.• F. Matsukura, T. Dietl. Y. Ohno, T. Sakon, Sadowski. I .• et aI.• 200ld. presented at Drugi Kongres
M. Motokawa and H. Ohno, 2000. Physica E 7. 976. Polskiego Towarzystwa Prozniowego, May 13-17,
Omiya, T.. F. Matsukura, A. Shen, Y. Ohno and 2001. Warszawa, Poland.
H. Ohno, 2001. Physica E 10. 206. Sadowski. 1.. K. Swil4tek. P. Svedlindh, R. Mathieu.
Osinniy, V.• A. Jedrzejczak, M. Arciszewska, W. Do- M. Karlsteen, 1. Kanski and L. Ilver, 2001e. sub-
browolski. T. Story and I. Sadowski. 2001. Acta mitted to Phys. Rev. B.
Phys. Polon. A 100. 327. Saeki. H.• H. Tabata and T. Kawai. 2001. Solid State
Overberg, M.E.. c.R. Abernathy. S.1. Pearton, Commun. 120,439.
N.A. Theordropoulou, K.T. MacCarthy and Saito. H.. W. Zaets, R. Akimoto, K. Ando, Y. Mishima
F. Hebard. 2001. Appl. Phys. Len. 79. 1312. and M. Tanaka, 2001, I. Appl. Phys. 89. 7392.
Paalanen. M.A .• and R.N. Bhatt. 1991. Physica B 169. Sakai. 0 .. S. Suzuki and K. Nishizawa, 2001. J. Phys.
223. Soc. Ipn. 70. 1105.
Park. 1.H.• S.K. Kwon and BJ. Min. 2000. Physica B Sakai. 0 .. and S. Suzuki. 2001. Physica E 10. 148.
281 & 282. 703. Salis. G.• D.T. Fuchs. J.M. Kikkawa, D.O. Awshalom,
Park. Y.D.• A.T. Habbicki, S.c. Erwin. C.S. Hellberg. Y. Ohno and H. Ohno, 2001a, Phys. Rev. Len. 86.
I.M. Sullivan. I.E. Manson. T.M. Ambrose. A. Will- 2677.
son. G. Spanos and B.T. Jonker, 2002. Science 295, Salis. G.• Y. Kato, K. Ensslin, D. Driscol, A.C. Gossard
651. and D.O. Awschalom, 2001b. Nature 414, 619.
Parmenter. R.H.• 1973. Phys. Rev. B 8.1273. Sanvito, S.• P. Ordej6n and N.A. Hill. 2001. Phys. Rev.
Pashitskii, E.A .• and S.M. Ryabchenko, 1979. Fizika B 63.165206.
Tverdogo Tela 21. 545. Sanvito, S.• and N.A. Hill. 2001. Appl. Phys. Len. 78,
Petukhov, A.G., D.O. Demchenko and A.N. Chantis, 3493.
2000, I. Vac. Sci. Technol. B 18.2109. Sapega, V.F..T. Ruf and M. Cardona, 2000. Solid State
Potashnik, S.1.• K.C. Ku, S.H. Chun, J.J. Berry. Commun. 114. 573.
N. Samarth and P. Schiffer. 2001. Appl. Phys. Len. Sapega, V.F.• T. Ruf and M. Cardona. 200 I, Phys. Stat.
79.1495. Solidi b 226. 339.
Reed. M.L.. N.A. El-Masry, H.H. Stadelmaier, Sato, K.. andH. Katayama-Yoshida, 2000. Ipn. J. Appl.
M.K. Ritums, M.1. Reed, e.A. Parker, I.e. Roberts Phys. 39. L555.
and S.M. Bedair, 2001. Appl. Phys. Len. 79. 3473. Sato, K.. and H. Katayama-Yoshida, 2001a, Ipn. J.
Price. G.L.. 1991, Phys. Rev. Lett 66. 469. Appl. Phys. 40. L651.
Prinz. G.A .• 1998. Science 282.1660. Sato, K.• and H. Katayama-Yoshida, 200lb. Ipn. 1.
Rodrigues Bitterncourt, A.C.. A.M. Cohen and Appl. Phys. 40. L334.
G.E. Marques. 1998. Phys. Rev. B 67.4525. Sato, K., and H. Katayama-Yoshida. 200lc, Jpn. I.
Sadowski, 1.. 1. Domagala. 1. Bak-Misiuk, K. Sqiatek, Appl. Phys. 40. L485.
I. Kanski, L. liver and H. Oscarsson, 1998. Acta Satoh, Y.• N. Inoue, N. Nishikawa and I. Yoshino.
Physica Polonica A 94.509. 1997. Third Symposium on Physics and Applica-
Sadowski, 1.. 1.Z. Domagala. 1. Bllk-Misiuk. tion of Spin-Related Phenomena in Semiconduc-
S. Koleswicki, K. Siatek, 1. Kanski, L. liver tors. 17-18 Nov. 1997. Sendai, Japan. p. 23.
and I. Strom. 2000. I. Vac. Sci. Technol. B 18. Satoh, Y.• D. Okazawa, A. Nagashima and I. Yoshino.
1697. 2001, Physics E 10,196.
Sadowski, I .• P. Mathieu. P. Svedlindh, 1.Z. Domagala, Schairer. W.• and M. Schmidt. 1974. Phys. Rev. B 10.
1. Bak-Misiuk, K. Swiatek. M. Karlsteen, I. Kanski, 2501.
L.Uver, H. Asklund and U. Sodervall, 2001a, Appl. Schliemarm,I., I. Konig. H.-H. Lin and A.H. MacDon-
Phys. Len. 78. 3271. ald. 200la. Appl. Phys. Len. 78. 1550.
Sadowski. I., P. Mathieu. P. Svedlindh, J.M. Karlsteen, Schliemann, 1.•1. Konig and A.H. MacDonald, 200lb.
I. Kanski, L.Uver. H. Asklund. K. Swil4tek,J.Z. D0- Phys. Rev. B 64. 165201.
magala, I. Bak-Misiuk and D. Maude. 2001b. Phys- Schon. G.M .• W. Faschinger and L.W. Molenkamp.
ica E 10, 181. 2001. Appl. Phys. Len. 79. 1807.
Sadowski. J.• E. Vanelle, D.S. Yee, D. Hrabovski, Schneider. 1., U. Kaufmann. W. Wilkening.
1. Kanski and L.Uver. 200k. presented at XXX in- M. Baeumer and F. Kohl. 1987. Phys. Rev.
ternational School on the Physics of Semiconduct- Len. 59, 240.
ing Compounds "Jaszowiec 2001". June 1-8.2001, Schulthess, T.C.• and W.H. Butler, 2001.1. Appl. Phys.
Ustrori-Jaszowiec, Poland. 89.7021.
86 F. MATSVKVRA et aI.
Semenov, Y.G., and V.A. Stephanovich, 2001, cond- Szczytko, J., W. Mac, A. Stachow, A. Twardowski,
matlO106406. P. Becla and J. Tworzydlo, 19%, Solid State Co-
Shen, A.• H. Ohno, F. Matsukura, Y. Sugawara, N. Ak- munn. 99, 927.
iba, T. Kuroiwa, A. Oiwa, A. Endo, S. Katsumoto Szczytko, J., A. Twardowski, K. Swiatek, M. PaI-
and Y. lye. 1997a, J. Cryst. Growth 175/176. 1069. czewska, M. Tanaka, T. Hayashi and K. Ando,
Shen, A., Y. Horikoshi, H. Ohno and S.P. Guo, 1997b. 1999a. Phys. Rev. B 60, 8304.
Appl. Phys. Lett. 71, 1540. Szczytko, J., W. Mac, A. Twardowski, F. Matsukura
Shen, A.. F. Matsukura, Y. Sugawara, T. Kuroiwa, and H. Ohno, 1999b, Phys. Rev. B 59.12935.
H. Ohno, A. Oiwa, A. Endo, S. Katsumoto and Szczytko, J.. A. Twardowski. M. Palczewska,
Y. lye. 1997c, Appl. Surf. Sci. 113/114. 183. R. Jablonski. 1. Furdyna and H. Munekata, 2001a,
Shen, A.. H. Ohno, F. Matsukura, Y. Sugawara, Phys. Rev. B 63. 085315.
Y. Ohno, N. Akiba and T. Kuroiwa, 1997d. Jpn. J. Szczytko, J., W. Bardyszewski and A. Twardowski.
Appl. Phys. 36. L73. 200lb. Phys. Rev. B 64.075306.
Shen, A.. F. Matsukura, S.P. Guo. Y. Sugawara, Szuszkiewicz, W.• E. Dynowska, B. Hennion, F. Ott.
H. Ohno, M. Tani, H. Abe and H.C. Liu, 1999, J. M. Jouanne, J.-F. Morhange, M. Karlsteen and
Cryst. Growth 201/202. 673. J. Sadowski, 2001. Acta Phys. Polon A. 100. 335.
Shibata. N., A. Ohki and A. Katsui, 1988. J. Cryst. Takamura, K.. F. Matsukura, Y. Ohno and H. Ohno,
Growth 93. 703. 2001. J. Appl. Phys. 89. 7024.
Shioda, R. K. Ando, T. Hayashi and M. Tanaka. 1998,
Tanaka, M., 1998. Physica E 2.372.
Phys. Rev. B 58.1100.
Tanaka, M., and Y. Higo, 2001, Phys. Rev. Lett. 87.
Shirai. M., 2001. Physica 10. 143.
026602.
Shirai. M.• T. Ogawa, I. Kitagawa and N. Suzuki. 1998.
Tazima, M., K. Yamamoto, D. Okazawa, A. Nagashima
J. Magn. Magn. Mater. 177-181, 1383.
and 1. Yoshino, 2001a. Physica E 10. 186.
Shimizu. H., T. Hayashi. M. Takenaka, Y. Nakano,
Tazima, M., A. Nagashima, K. Yamamoto. D. Okazawa
M. Tanaka and K. Ando, 1998. Fourth Symposium
and J. Yoshino, 2001 b. Extend Abstracts (The 48th
on Physics and Application of Spin Related Phe-
Spring Meeting. The Japan Society of Applied
nomena in Semiconductors. 3-4 Dec. 1998, Sendai,
Physics) p. 1322.
Japan. p. 53.
Theodoropolpu, N., A.F. Hebard. M.E. Overberg,
Shimizu. H.• T. Hayashi, T. Nishinaga and M. Tanaka,
C.R. Abernathy, SJ. Pearton, S.N.G. Chu and
1999. Appl. Phys. Lett. 74. 398.
RG. Wilson. 2001a. Appl, Phys. Lett. 78. 3475.
Shono, T., T. Hasegawa, T. Fukumura, F. Matsukura
Theodoropolpu, N.. A.F. Hebard. S.N.G. Chu,
and H. Ohno, 2000, Appl. Phys. Lett. 77, 1363.
Slupinski, T.• H. Munekata and A. Oiwa, 2002a, Appl. M.E. Overberg, C.R. Abernathy. SJ. Pearton,
R.G. Wilson and J.M. Zavada. 200lb. Appl. Phys.
Phys. Lett. SO. 1592.
Slupinski, T., A. Oiwa, S. Yanagi and H. Munekata, Lett. 79. 3452.
2002b, J. Cryst. Growth 237-239, 1326. Theodoropolpu, N.• A.F. Hebard, M.E. Overberg,
Sonoda, S., S. Shimizu. T. Sasaki. Y. Yamamoto and C.R. Abernathy, SJ. Pearton, S.N.G. Chu and
H. Hori, 2002. J. Cryst. Growth 237-239, 1358. RG. Wilson, 2002, cond-matl0201492.
Soo, Y.L., S.W. Huang, Z.H. Ming, Y.H. Kao, Tokura, Y.. 2000. in: Clossal Magnetoresistive Oxides,
H. Munekata and L.L. Chung. 1996, Phys. Rev. B ed. Y. Tokura (Gordon & Breach Science Publish-
58.4905. ers. London).
Soo, Y.L., G. Kioseoglou, S. Huang, S. Kim. Y.H. Kao. Tokura, Y.• and Y. Tomioka, 1999, J. Magn. Magn.
Y. Takatani, S. Haneda and H. Munekara, 2001 a, Matter. 200, 1.
Phys. Rev. B 63. 195209. Tsuruoka, T., R. Tanimoto, N. Tachikawa, S. Ushioda,
Soo, Y.L.. G. Kioseoglou, S. Kim. S. Huang. Y.H. Kao. F. Matsukura and H. Ohno, 2000, in: Proceedings
S. Kuwabara, S. Owa, T. Kondo and H. Munekara, 25th International Conference on Physics of Semi-
200lb. Appl. Phys, Lett. 79. 3926. conductors. Sep. 17-22. Osaka. Japan. eds N. Miura
Story. T., R.R Galazka, R.B. Frankel and P.A. Wolf, and T. Ando (Springer-Verlag. Berlin. Heidelberg.
1986. Phys. Rev. Lett. 56,777. 2001) p. 245.
Sugawara, Y.. N. Akiba, T. Kuroiwa, F. Matsukura, Tsuruoka, T., R. Tanimoto. N. Tachikawa, S. Ushioda,
A. Shen and H. Ohno, 1997, presented at The 300 F. Matsukura and H. Ohno, 2002, Solid State Com-
Symposium on the Physics and Application of Spin- mun. 121, 79.
Related Phenomena in Semiconductors. Sendai, Veda, K., H. Tabata and T. Kawai. 2001, Appl. Phys.
Japan. Nov. 17-18. 1997. pp. 30-33. Lett. 79, 988.
Ueda, S.• S. Imada, T. Muto, Y. Saitoh, S. Suga, F. Mat- Physics and Application of Spin Related Phenom-
sukura and H. Ohno, 2001, Physica E 10. 210. ena in Semiconductors. 17-18 Dec. 2001, Yoko-
Van Esch, A.• W Van Roy. J. De Boeck. I. Franeois, hama, Japan. p. 60.
H. Bender. G. Borghs, L. Van Bockstal, R. Bogaerts Yamamoto, T.• and H. Katayama-Yoshida. 1999. Fifth
and F. Herlach, 1995. Mater. Sci. Forum 182-184. Symposium on Physics and Application of Spin Re-
623. lated Phenomena in Semiconductors. 16-17 Dec.
Van Esch, A.• L. Van Bockstal, J. De Boeck. G. Ver- 1999. Sendai, Japan. p. 170.
banck, A.S. Van Sternbergen, P.J. Wellman. B. Gri- Yanagi, S.• H. Munekata, Y. Kitamoto, A. Oiwa and
etens, R. Begaerts, F. Herlach and G. Borghs, 1997. T. Slupinski, 2002. J. Appl. Phys. 91. 7902.
Phys. Rev. B 56. 13103. Yang. J.. H. Yasuda, S. Wang, F. Matsukura, Y. Ohno
Van Schlifgaarde. M.• and O.N. Mryasov, 2001, Phys. and H. Ohno, 2000. Appl. Surf. Sci. 166. 242.
Rev. B 63. 233205. Yasuda. H.• and H. Ohno, 1999, Appl. Phys. Lett. 74,
Van Stapele, R.P.. 1982. in: Handbook on Mag- 3275.
netic Materials. Vol. 3. ed. K.H.J. Bushow (North- Yeo J., Y.B. Kim. A.J. Millis, B.I. Shraiman, P. Ma-
Holland. Amsterdam) p. 603-745. jumdar and Z. Te§anovic. 1999. Phys. Rev. Lett. 83.
Von Molnar. S., H. Munekata, H. Ohno and L.L. 3737.
Chang, 1991. J. Magn. Magn. Mater. 93. 356. Zajac, M.• R. Dorandziriski, J. Gosk, J. Szczytko,
M. Lefeld-Sosnowska, M. Kaminska, A. Twar-
Vnjen, R., E. Yablonovitch, K. Wang. H.W. Jiang.
dowski. M. Palczewska, E. Grzanka and
A. Balandin, V. Roychowdhury, T. Mor and D. Di-
W. G~bicki, 2001a, Appl. Phys. Lett. 78,1276.
Vincenzo, 2000. Phys. Rev. A 62. 012306.
Zajac, M .• J. Gosk, M. Kaminska, A. Twardowski.
Vurgaftman. I.• andJ.R. Meyer. 2001. Phys. Rev. B 64.
T. Szyszko and S. Podsiadlo, 200lb. Appl. Phys.
245207.
Lett. 79. 2432.
Wahl. U.• A. Vantomme, G. Langousche, J.G. Correia,
L. Peralta and The ISOLDE Collaboration. 2001.
Zener, c.. 1951a. Phys. Rev. 81.440.
Zener, C.• 1951b. Phys. Rev. 82,403.
Appl. Phys. Lett. 78. 3217.
Zener. c, 1951c. Phys. Rev. 83. 299.
Walukiewicz. W.• 1988. Phys. Rev. B 37. 4760.
Zhang. F.C.• and T.M. Rice. 1988. Phys. Rev. B 37.
Wei, S.-H .• and A. Zunger, 1993. Phys. Rev. B 48.
3759.
6111.
Zhang, S.• 2000. Phys. Rev. Lett. 85. 393.
Wiley. J.D .• 1975. in: Semiconductors and Sernimetals, Zhao. J.H .• F. Matsukura, K. Takamura, E. Abe,
Vol. 10. eds R.K. Willardson and A.C. Beer (Acad- D. Chiba and H. Ohno, 2001. Appl. Phys. Lett. 79.
emic Press. New York) p. 173. 2276.
Wojtowicz. T.• T. Dietl. M. Sawicki, W. Plesiewicz and Zhao. J.H .• F. Matsukura, E. Abe. D. Chiba, Y. Obno,
J. Jaroszyriski, 1986. Phys. Rev. Lett. 56. 2419. K. Takamura and H. Ohno, 2002. J. Cryst. Growth
Wolf. S.A., 2000. J. Supeconductivity 13. 195. and 237-239. 1349.
other papers in the same issue. Zhao. Y.-J.. WT. Geng, K.T. Park and A.J. Freeman.
Wolf. S.. D.D. Awshalom, R.A. Buhrman. 200la. Phys. Rev. B 64. 035207.
J.M. Daughton. S. von Molnar. M.L. Roukes, Zhao. Y.-J.• WT. Geng, A.J. Freeman and T. Oguchi,
A.Y. Chtchelkanova and D.M. Treger, 2001. 200lb. Phys. Rev. B 63. 201202.
Science 294.1488. Ziese, M.• and M.J. Thornton (eds), 2001. Spin Elec-
Wolff. P.A.. R.N. Bhatt and A.C. Durst. 1996. J. Appl. tronics (Springer. 200 I).
Phys. 79. 5196. Zunger, A.• 1986. in: Solid State Physics. Vol. 39. eds
Yamada. M.• K. Ono, M. Mizuguchi, J. Okabayashi, H. Ehrenreich and D. Turnbull (Academic Press.
T. Mano, M. Oshima and H. Akinaga, 2001. Ex- New York) p. 275.
tend Abstracts (Fall Meeting, The Japan Society of Zutic. I.. J. Fabian and S. Das Sarma, 2001. Phys. Rev.
Applied Physics). p. lOll; Seventh Symposium on B 64. 121201.
chapter 2
MAGNETOELASTICITY IN NANOSCALE
HETEROGENEOUS MAGNETIC MATERIALS
NGUYEN HUU Due

Cryogenic Labotatory, Faculty of Physics, National University of Hanoi
334 Nguyen Ttai, Thanh xuan, Hanoi
Vietnam
p.E. BROMMER
Van der Waals-Zeeman Instituut, Universiteit van Amsterdam
Valckeniersttaat 65, 1018 XE Amsterdam
The Netherlands

e 2002 Elsevier Science B.V. All rights reserved
89
CONTENTS
Abbreviations . . 91
List of symbols . 91
I. Introduction 93
2. Magnetoelastic effects. 95
2.1. Physical background of magnetoelasticity 95
2.2. Symmetry considerations .. 97
2.3. Surface and interface effects 105
3. Determination of magnetostriction of thin films. 106
3.1. The magnetoelastic cantilever method 106
3.2. The strain induced anisotropy method 108
3.3. Magnetostriction in spin valves . . . . 110
3.4. The strain modulated ferromagnetic resonance (SMFMR) method . III
3.5. The secondary electron spin-polarisation spectroscopy (SESPS) . 112
3.6. The strain-induced anisotropy due to the spontaneous strains .. 113
4. Giant magnetostriction in rare-earth-transition metal thin films . . . . 114
4.1. General consideration of magnetism in rare-earth-transition metal alloys . 114
4.2. Magnetostriction of amorphous rare earth based thin films .. 116
4.3. Magnetostriction of nanocrystalline rare earth based thin films. 132
5. Magnetostrictive multilayers . . . . . . . . . . . . . . . . . . . . 139
5.1. Nanocrystalline TbDyFe + ZrlNb multilayers . 139
5.2. Magnetostrictive spring magnet type multilayers (MSMM) 140
5.3. Interface magnetostriction of multilayers 151
6. Magnetoelasticity of rare-earth superlattices . 158
7. Magnetostriction of R-T sandwich films . . . . 163
8. Magnetostriction in nanocrystalline and granular magnetic materials 168
9. Huge magnetostriction in perovskites . 174
10. Potential applications of magnetostrictive materials 185
11. Summary and concluding remarks 190
Acknowledgements 192
References . . . . . 192
90
Abbreviations
a- amorphous
AF anti ferromagnetic
AFM anti ferromagnetic metal
AFI antiferromagnetic insulator
c crystalline
CEF crystalline electric-field
CEMS conversion electron Mossbauer spectra
CG cluster glass (state)
CL charge localisation
CMR colossal magnetoresistance
CO charge-ordered (state)
DE double exchange
EDW extended domain wall
EMD easy magnetisation direction
FM ferromagnetic
FMM ferromagnetic metal
GMR giant magnetoresistance
GMS giant magnetostriction
IT Jahn-Teller
MEMS rnicroelectromechanical system
MOKE magneto-optic Kerr effect
MSMM magnetostrictive spring magnet type multilayer
n nanocrystalline
p polycrysta1line
PMI paramagnetic insulator
R rare-earth
HR heavy rare-earth
LR light rare-earth
SAMR small-angle magnetisation rotation
SESPS secondary electron spin-polarisation spectroscopy
SMFMR strain modulated ferromagnetic resonance
T transition metal
List of symbols
X magnetic susceptibility
A magnetostriction
91
92 N.H. DUe and P.E.BROMMER
v Poisson's ratio
w spontaneous volume magnetostriction
a stress
X).. magnetostrictive susceptibility
Aam magnetostriction of amorphous matrix
Xb magnetoelastic susceptibility
Acr magnetostriction of nanocrystalline grains
Aeff effective magnetostriction
Pi (i=x,y,z) direction cosines of the measured magnetostriction
aj (i=x,y,z) direction cosines of the magnetisation
a] Stevens factor
AS saturation magnetostriction
AS surface/interface magnetostriction
At anisotropic (Joule) magnetostriction
AV volume magnetostriction
A divalent alkaline ions
Aij spin-spin coupling parameter
b elastic coefficient in thin films
B external magnetic field (/-LoH)
B bu1k , By,2 magnetoelastic coefficient in bulk materials
Be~ch exchange field
Bhf hyperfine field
bsurf surface/interface magnetoelastic coefficient in thin films
bv volume magnetoelastic coefficient in thin films
d grain diameter
e volume dilatation
E Young's modulus
gR Lande factor
J quantum number of the total angular momentum
1R the total angular momentum for the 4f ions
K anisotropy constant
MY magnetoelastic tensor
Mj sublattice magnetisation
MR magnetisation of the R sub lattice
MT magnetisation of the T sublattice
Ms spontaneous magnetisation
P volume fraction
t film thickness
TA annealing temperature
Tc Curie temperature
Ts substrate temperature
Zij number of nearest neighbours
r exchange integral
6 sperimagnetic cone angle
MAGNETOELASTICITY IN NANOSCALE HETEROGENEOUS MAGNETIC MATERIALS 93
1. Introduction
The origin of magnetoelasticity is the interplay of the elastic properties of a material

and its magnetic state. The magnetoelastic coupling terms in the free energy give rise
to (extra) strains in a magnetic substance, i.e. the volume magnetostriction and the
Joule magnetostriction (anisotropic changes in linear dimensions). The concurring change
of the magnetic state can be induced either by a temperature variation (spontaneous
magnetostriction) or by application of a magnetic field (forced magnetostriction). The
magnetostriction varies from nearly 1% in rare-earth based intermetallic compounds to
almost zero for iron based amorphous and nanocrystalline alloys. Also the elastic moduli,
can be affected, e.g. the !l E effect. Conversely, an imposed strain may cause extra magnetic
anisotropy. Apart from these magnetoelastic coupling effects, a magnetised body may gain
magnetostatic energy by macroscopic, rather small (~I 0- 6 ) , deformations, i.e. the form
effect.
Nanoscale thin films and multilayers, nanocrystalline magnetic materials, granular films,
and amorphous materials have been and still are most attractive topics in the field of basic
and applied magnetic research. The local properties of these nanoscale heterogeneous
magnetic systems do vary in the scale of nanometers, for amorphous materials down to an
atomic scale. One is able to produce nanocrystals with a narrow size distribution, embedded
in an amorphous matrix at approximately constant distance between them. Granular solids
composed of magnetic particles diluted in a non-magnetic matrix are also heterogeneous
systems. Going down to an atomic scale, amorphous magnets can be considered as (on
nanoscale uniform) heterogeneous magnetic systems. The local anisotropy is assumed to
vary in strength and orientation with a uniform correlation length of only a few angstroms.
The exchange coupling between the adjacent magnetic moments shows an analogous
variation.
Heterogeneous materials exhibit unusual magnetic properties which do not occur, or
are negligible, in bulk materials: e.g. surface (interface) magnetic anisotropy and surface
(interface) magnetostrictive strains, giant magnetoresistance and so on. An important key
to understanding such effects is the knowledge of the magnetic behaviour at the interfaces,
where questions concerning the magnetic moments, the type of magnetic exchange
coupling and the spin orientation may be answered. The local atomic arrangement at the
interface differs strongly from that in the bulk. The local symmetry is lowered, some
interactions are changed or are missing. Indeed, the interface atoms may be considered
to form a new phase and any property characteristic of this phase may become a dominant
one for the whole system. It becomes particularly evident in the case of interfacial
magnetostriction which can lead to a decrease (almost to zero) or to an increase (over
the bulk value) of the resulting magnetostriction of the nanoscale system. In this handbook
series, magnetism in ultrathin transition metal films and muItilayers (Gradmann 1993) and
magnetism in artificial metallic superlattices (Rhyne and Erwin 1995) was presented in
the volumes 7 and 8, respectively. Herzer (1997) reviewed nanocrystalline soft magnetic
alloys in volume 10. Giant magnetoresistance in multilayers was presented in volume 12
by Barthelemy et al. (1999), and NMR in multilayers by Riedi et al. (1999).
The present chapter deals with the magnetoelasticity of heterogeneous materials.
Generally, the dimensions of a magnetostrictive material change when the material is
94 N.H. Due and P.E. BROMMER
subjected to a change in magnetic field. Hence. magnetostrictive materials can be applied

in transducers (as well as piezoelectric and shape memory ones). which directly convert
electrical energy into mechanical energy. They are useful in the manufacture of sensors.
actuators. controllers. force and displacement as well as other electro-acoustic devices.
For these applications. transducer materials in the form of thin films are of special
interest because cost-effective mass production is possible. compatible to microsystem
processing technologies. In addition. magnetostrictive thin films are particularly promising
as microactuator elements like cantilevers or membranes, since they combine high-energy
output. high-frequency and remote-control operation. Due to this potential, interest in such
giant magnetostrictive thin films has rapidly grown over the past few years. Owing to
the specifications related with applications in microelectromechanical systems (MEMS).
materials research has been focused on thin-film materials showing giant magnetostriction
(GMS) in combination with soft magnetic properties. Here, the rare-earth metals and
rare-earth-iron intermetallic compounds have been shown to generate very interesting
systems. In 1971. A.E. Clark at the Naval Ordnance Laboratory (NOL). now Naval Surface
Warfare Center discovered that bulk TbFe2 (Terfenol: Ter for Tb, fe for Fe. nol for
NOL as above) has the highest room-temperature magnetostriction, and his Terfenol-D
(D for Dy: TbxDYJ-xFe2. where x ~ 0.3) is still the best known, exploiting the huge
magnetostriction in combination with reduced magnetocrystalline anisotropy (Clark and
Belson 1972a, 1972b. 1972c). Wang et al. (2000) studied the magnetostriction and the
magnetisation process in a TbO.27DYO.73Fe2 single crystal. Indeed. as a tradition, research
on giant magnetostrictive thin films was focused on iron based rare-earth alloys. Later.
however, important progress has been made with the development of rare-earth-cobalt
alloys at the 'Laboratoire Louis Neel' in Grenoble (Betz et al. 1999). Due et al. (2001b)
proposed to name the amorphous Tb-Co compounds (with composition near to TbC02) as
'a-TerCoNeeI', by an obvious analogy to the name TerFeNol above. Still better results were
obtained by combining Fe and Co. Due et al. (1996) achieved a record magnetostriction
of 1020 x 10-6 on 'a-Terfeconeel', i.e. an amorphous Tb-(Fe,Co h thin film. whereas Due
et al. (2oooa) extended the study to 'a-Terfeconeel-D', i.e. amorphous (Tb,Dy)(Fe,Coh
films. In Vietnam's capital Hanoi. as a variant, the amorphous compound with composition
Tb(FeO.55C00.45) 1.5. to be named 'a-Terfecohan', was developed (Danh et al. 2000; Due et
al. 2ooob). Composite materials are known to exhibit sometimes outstanding properties,
which cannot be predicted simply from the behaviour of the constituents. Actually, a
very high magnetostrictive susceptibility has been observed in TbCo/FeCo and TbFe/Fe
multilayers (Quandt et al. 1997a, 1997b).
The tlE effect (the change in the value of Young's modulus E) is perhaps the best known
example of a change of the elastic moduli caused by magnetoelasticity (Du Tremolet de
Lacheisserie 1993). The tl E effect plays an important role in various practical applications
(Hernando et al. 1988; Gibbs 1992; Gibbs et al. 1996, 1997) including such spectacular
MEMS as micromachines and actuators using thin film and multilayer magnetostrictive
materials (Gibbs et al. 1996, 1997). For more insight on this effect and its applications,
however, we refer to the above-mentioned publications.
In this handbook series, previous work on giant magnetostriction (which was mainly
focused on rare-earth compounds) is excellently reviewed by Clark (1980) on "Magne-
tostrictive Rare-Earth-Fer Compounds", by Morin and Schmitt (1990) on "Quadrupolar
Interactions and Magneto-Elastic Effects in Rare-Earth Intennetallic Compounds" and by

Andreev on "Thermal Expansion Anomalies and Spontaneous Magnetostriction in Rare-
Earth Intennetallics with Cobalt and Iron" (Andreev 1996). Noteworthy are also the more
recent review papers by Szymczak (1997) on "Mechanisms responsible for magnetostric-
tion in heterogeneous magnetic systems" and on "From almost zero magnetostriction to
giant magnetostrictive effects: recent results" (Szymczak 1999). We mention also the re-
view report by Sander (1999) on 'The correlation between mechanical stress and magnetic
anisotropy in ultrathin films". Szymczak (2000) focuses attention on "Giant magnetostric-
tive effects in magnetic oxides". Much detailed practical information can be found in the
"Handbook of Giant Magnetostrictive Materials" by Engdahl (1999). The review of Due
(2001) "Giant magnetostriction in lanthanide-transition metal thin films" deals with amor-
phous thin films. Therefore, in the present chapter, this subject is treated concisely, fo-
cussing attention on more recent results.
The present chapter is organised as follows. After this introduction, section 2 is devoted
to the description of magnetoelastic phenomena. Problems in the determination of the mag-
netostrictive coefficients of thin films are presented in section 3. In secttion 4, magnetism
and magnetostriction in amorphous rare earth-transition metal alloys are summarised, and
the possibilities to develop giant magnetostriction in nanocrystalline thin films are dis-
cussed. Sections from 5 to 8 deal with an overview of the research of magnetostriction in
artificially structured materials, such as multilayers, rare-earth superlattices, R-T sandwich
films, nanocrystalline soft magnetic materials and granular solids. Doped manganese ox-
ides RI-xAxMn03, (RI-xAxhMn207, and cobaltates RI-xAxC003 have been shown to
exhibit colossal magnetoresistance. Their magnetostriction is presented in section 9. Some
actual and potential applications of magnetostrictive films in MEMS are briefly discussed
in section 10. Finally, a summary and concluding remarks are presented in section 11.
2. Magnetoelastic effects
2.1. Physical background of magnetoelasticity

Usually, a discussion of magnetoelastic effects is based on the minimisation of a free en-
ergy expression, which is the sum of the magnetostatic energy and the 'internal' free en-
ergy. The magnetostatic energy originates from the (long-range) dipolar interactions, giv-
ing rise to demagnetising fields, shape anisotropy and 'magnetic forces'. The minimisation
of this energy leads to deformations, which depend on the geometry of the sample (hence
the name form effect). These deformations can be inhomogeneous even when the mag-
netisation is uniform, and can contribute volume changes as well as anisotropic strains.
This effect exists in all magnetic materials even in the case of vanishing magnetoelastic
coupling. Its magnitude, however, is always small ( ~ 10-6 ).
As shown in the next subsection, the 'internal' magnetoelastic effects are described by
expanding the free energy as a sum of the elastic free energy, the magnetic free energy
and the magnetoelastic coupling terms. Symmetry considerations restrict the number of
possible terms (see e.g. Becker and Doring 1939). It is necessary, however, to consider the
underlying physical mechanisms too. The isotropic Heisenberg exchange interaction for
localised spins, for example, can be written as E j »i (-2AijSiSj), where the interaction
parameters A;j may be assumed to be functions of the interatomic distance vector rij.
Taking into account the variation of r;j with a certain strain component e, one finds
magnetoelastic coupling terms like
(1)
Such a contribution can be expected not only for the volume magnetostriction but also
for other strain components (see e.g. the magnetostriction contribution "-'A~'O in eq. (4)
below). The temperature (and field) dependence of the magnetoelastic coupling parameter
b is mainly determined by the correlation function (S;Sj). Analogously, the anisotropic
Joule magnetostriction may originate from crystal field effects (also responsible for the
magnetic anisotropy, if the symmetry is low enough; see introduction) and from the
pseudo-dipolar exchange interactions, which are anisotropic and vary rapidly with the
interatomic distance (see e.g. Du Tremolet de Lacheisserie (1999) for explicit expressions).
The angular dependence is determined by the corresponding correlation function, and so
is the temperature dependence of the magnetostriction and that of the magnetic anisotropy.
Notice, however, that, by cancellation of terms due to symmetry, the (local or total)
magnetic anisotropy may vanish, where the magnetostriction does not. For itinerant-
electron systems, in addition, the band splitting may cause large deformations too. For
instance, in Re02 based compounds, the (volume) magnetostriction can reach values up to
"-'10- 2 , see Due and Goto (1999), Due and Brommer (1999).
An important physical origin of the magnetostriction in rare-earth-transition metal
based materials is indicated in fig. I. Here, the deformations are thought to be due to the
anisotropy in the orbital part. For 3d-atoms, the large extension of the 3d-wave function
invokes a strong interaction with the crystalline electric field, leading to (partly) quenching
of the orbital moment. The spin-orbit coupling is relatively weak ("-'0.015 eV per atom),
and, helped by the stronger exchange interactions ("-'0.1 eV), the spin moments can easily
be rotated into the applied-field direction, leaving the orbitals almost unaffected (fig. la).
The anisotropy and then the magnetostriction is small. For rare-earth ions, the spin-orbit
coupling LS is strong and a rotation of the total moment L + S = J forces simultaneously
a rotation of the orbitals. This results in not only a large magnetocrystalline anisotropy but
also in a deformation of the crystal lattice. This magnetostriction happens to be negative
when the distribution of the 4f-charge distribution is prolate, whereas the magnetostriction
is positive when the charge distribution is oblate. As illustrated in fig. l(b, c), one may
imagine that the surrounding positively charged neighbours are drawn to the negative
charge cloud (see also section 4, and fig. 8).
In the actual thin-film materials, large local strains and large variations in local
atomic arrangement may occur, possibly leading to large magnetic anisotropy's and large
magnetoelastic effects in the as-deposited materials. Nevertheless, even in amorphous thin
films, the local atomic arrangements appear to resemble those of the crystalline materials,
the more so after suitable annealing. Some relaxation may occur, however. Moreover,
one should take into account the possibility that anisotropic pair ordering is induced or
originates from the fabrication (e.g. sputtering) process. Models were worked out, for
example, by Mergel et al. (1993) and Huang et al. (1995). Anyhow, such considerations
do support the idea to look upon the whole range of materials, from crystalline down to
amorphous, as being governed by basically the same physical interactions.
ED
ED 1,1tfi\ ED (a)
weak
~, spin-orbit coupling
ED
(b)
negative Joule
magnetostriction
(c:)
positive Joule
magnetostriction
Fig. I. Schematic representation of the phenomena of magnetostriction. The surrounding atoms, schematisc:d as
positive charges. are displaced from their initial symmetrical position (open circles) to their final strained positions
(black circles) due to the electrostatic interactions with the:aspherical electron distribution.
2.2. Symmetry considerations

With respect to a (fictitious) non-magnetic, unstrained state, the free energy is written as the
sum of an elastic contribution, a magnetic contribution and the magnetoelastic interaction.
The elastic free energy is minimal for vanishing strains, and here, for simplicity, its
expansion is restricted to terms of second order in the (six) different elements of the
(symmetrized) strain tensor: exx. eyy. ezz, exy. eyz. exz. The magnetic contribution
is described by an expansion in terms of a; (i = 1,2.3, corresponding to x, y, Z,
respectively), i.e. the direction cosines of the magnetisation direction. For simplicity, we
restrict the detailed discussion to the (first-order) magnetoelastic coupling terms, which
are linear in the strains and are of up to second order in {a;}. Taking into account
some underlying quantummechanical mechanisms, Callen and Callen (1963, 1965) have
presented an instructive group-theoretical analysis, thereby establishing a notation, which
has been used by many authors (many of them adding their own flavour, mostly adapting
the normalisation; see e.g. Du Trernolet de Lacheisserie (1993, 1995». A brief outline of
the reasoning may establish and clarify the notation. Let us start by recalling that, for given
strains, the linear expansion, measured in the direction fJ = (f3I, f32, f33) is given by
!:i.f./f. = Exxf3t + 2Exyf31 f32 + eye!. (2)
This expression must be independent of the choice of the co-ordinate system. In line
with the general usage to look upon the 6 independent elements of the symmet-
ric strain (stress) tensor as components of a vector, we may elucidate this indepen-
dence of co-ordinate system by writing eq. (2) as the scalar product of the vectors
[E xx, Eyy, Ezz, exy.j2, eyz.j2, ezx.j2] and [f3t, f3i, f3j, f31f32.j2, f32f33.j2, f33f31.j2]. The
components of these vectors transform like [x 2, y2, z2, xy.j2, yz.j2, xz.j2], and, hence,
the scalar products transform as:
evidently invariant. This property remains intact, when one applies an orthogonal change
of basis vectors (in the 6-dimensional space). So, introducing the 'volume dilatation'
e = !:i. V/ V = (exx + eyl' + e:J,

we can replace the 'diagonal elements' {E xx , E yy , e:zl by
{(exx + eyy + ed/.j3 = e] .j3, (2ez: - exx - eyy)/.j6 = (e:: - e/3).j(3/2),

(exx - Eyy)/ .j2},
and analogously e.g. {f3r, f3i, f3jl by {I/ .j3, (f3j - 1/3).j(3/2), (f3? - f3i)/ .j21, and so
on. Now, again forming the scalar product yields
!:i.f./f. = e/3 + (3/2)(e:: - e/3)(f3j - 1/3) + O/2)(E xx - Eyy)(f3t - f3i)

+ [2exyf3If32 + eye!.], (3a)
which also can be written as
!:i.f./f. = e /3 + [(e:: - e!3)(f3] - 1/3) + 2exyf31 f32 + cycl.]. (3b)
For a material strained in one direction, one may check that !:i.f./f. equals ez:, the only non-
zero strain component, when the z-direction and the measuring direction are chosen along
the strain direction.
Next, we consider the symmetry operations of the system. The free energy is expanded as
a function of the strains (as defined above) and the corresponding 'harmonic polynomials'
h(uj). The resulting expression must be invariant under the symmetry transformations.
If the symmetry is low enough, one can reduce further the vector space(s) introduced
above, by choosing a suitable basis. The resulting irreducible subspaces are indicated
by the superscript a when one-dimensional, and by superscripts y, ... , when more-

dimensional. A one-dimensional subspace yields an invariant strain and a corresponding
harmonic polynomial (possibly isotropic), directly. Any product of these invariants
(possibly originating from different irreducible subspaces) forms also an allowed invariant.
For a more-dimensional subspace, e.g. spanned by functions {hi}, one knows from a
fundamental group-theoretical theorem, that the only (second-order) invariant is I;j(hj)2.
The only invariant (bilinear) magnetoelastic coupling terms are I;jeihi ' where lei}
j}
(the strains) and {h must transform according to the same irreducible representation y.
Then, the magnetostrictive strains follow from the minimisation of the free energy
part Y2CYI;j(ei)2 + BYI;jeihj, i.e. ei = -(BY /CY)hi, governed by the (first-order)
'coefficient of magnetostriction' .AX = -(BY / CY), for the 'y combination' Hei}, {hi}].
The free-energy contribution can be written as -Y2(By2/CY)I;jhi2, showing explicitly
the well-known magnetoelastic contribution to the magnetic anisotropy.
As we have seen above, there is always at least one one-dimensional irreducible
subspace, i.e. the invariant trace of the strain tensor, e = exx + e xy + ezz (analogously
x 2 + y2 + Z2 = r 2 and ar
+ a~ + a~ = 1).
For an isotropic material, the space spanned by the five remaining strain components
cannot be reduced further. Consequently, there are only two magnetostriction modes.
The energy density can be written down directly, in principle for either irreducible
representation separately:
F = Y2C ae 2/3 + B a,oe/3 +Y2CY[(e zz -e/3)2 +2e;y +cycl.]
+ By,2[(e zz - e/3)(a~ - 1/3) + 2e xya\a2 + cycl.], (4)
For the magnetoelastic coupling parameters (Ba,o, BY,2), the first superscript indicates the
irreducible representation, the second one the degree of the harmonic polynomial in {ai}.
Notice that the bracketed expressions in eq. (4) can be rewritten in a form analogous to that
in eq. (3a):
(e z: - e/3)2 + cycl. = (3/2)(e zz - e/3)2 + (l/2)(e xx - e yy)2, (Sa)
(e zz - e/3)(a~ - 1/3) + cycl. = (3/2)(e zz - e/3)(a~ - 1/3)
+ (l/2)(e xx - eyy)(ar - aD. (5b)
Moreover, still another fashionable way to write such expressions follows from e.g.:
(3/2)(e zz - e/3)2 = (2/3){e zz - (exx + e yy)/2}2. (5c)
The coupling gives rise to 'magnetic stresses', i.e. the magnetic pressure pmag = Ba,o /3,
the diagonal traceless stress tensor elements (Tx~ag = -BY,2(ar - 1/3) (cycl.) and the
off-diagonal stresses (Txymag = -By·2 a 1a 2 (cycl.). In response to these stresses, the
equilibrium strains can be found by minimising the free energy contributions, resulting
100 N.H. Due and P.E.BROMMER
A,cx,O
z
/i 1.,>0
~-
Ms=O H=O
Fig. 2. The two principle modes of observable magnetostriction for an isotropic magnetic substance.
in e = Aa,O = _Ba,o [c" and {(e u - e/3) = ).Y.2(a~ - 1/3), e xy = Ay·2 a 1a 2 (cycl.j}, with
)'y,2 = _BY'o IcY . Plugging in these results in eq. (3b), we find
Lli/i =A f1
• /3 + )"Y.2[{ (a~
O
- 1/3)(pj - 1/3) + cycl.] + {2a,a2PI P2 + cycl.I],
(6)
Starting from a perfectly demagnetised state (with (af) = (a~) = (a~) = 1/3, (ala2) =
0, and so on), the ideal 'saturated' relative change of length measured along the
field direction (common to the magnetisation direction: a3 = P3 = 1) would be ).,11 =
(Lli/i)"at - Aa,o/3 = 2Ay,2/3 = AS (by definition; subscript S indicates 'saturation').
The relative change in the plane perpendicular to the field would be (Lli/fh =
)".1 = - ~).,s. As the materials always present an anisotropic demagnetised state, it is
necessary to apply the field in two perpendicular directions and determine ).,y,2 =
(All - A.1), and As = 2/3(AII - A.1), independent of the demagnetised state of the mag-
netic materials.
The two principle modes of the magnetostriction ().,a.O and X, or ).,Y,2) introduced above
are illustrated in fig. 2. With respect to the non-magnetic fictitious state, a spherical,
isotropic sample exhibits a relative volume change LlV / V = Aa.O, when it becomes
magnetic. In addition, when one forces the moments to be directed along an applied
magnetic field B, an anisotropic deformation is induced, which transfers the sphere into an
ellipsoid with the same volume.
For a lattice with cubic symmetry, the 6 strain components are grouped into the
one-dimensional representation a: basis e/.,/3, a two-dimensional representation y:
basis {(e zz - e /3).,/(3/2), (e xx - eyy)/ .,/2}, and a three-dimensional one s: basis
{exy.,/2. eyz.,/2, ezx.,/2}. The modes of deformation can be described as follows. The
isotropic mode e/.,/3 '" (exx + eyy + ezz) gives a volume change and does not reduce
the symmetry. The anisotropic y-modes reduce the cubic symmetry by varying the lattice
parameters without modifying either the volume or the angles. Finally, the s-modes reduce
the symmetry by shearing without changing either the volume or the lattice parameters (see
fig. 3). Notice that, in this notation, the co-ordinate system should coincide now with the
cubic axes.
---
TJ LT'
_..1
I I I I
I I
I I I I
I I
,< --- I I
Ala 'A' At
A24
Fig. 3. The normal modes of deformation and the corresponding magnetostriction modes for cubic and uniaxial
symmetry.
The different contributions to the free energy can be written down immediately,
by analogy to the procedure followed above. Here, we give the contribution of the
magnetoelastic coupling to the energy density in the notation of Du Tremolet de
Lacheisserie (J 993, 1995):
FmetlV = ( B;'O) (Exx + f yy + Ell)
+ By,z[23( Ezz - Exx + EYY ) (z

2 a3 -
ar +2 a~)
+ ~(ExX - Eyy)(ar - aD]
+ 2B E'Z(E
YZaz a3 + Ezxa3a) + Exya)az), (7a)
Notice the "splitting" of the (isotropic) BY'z in the two parts BY'z and Bd. A similar
splitting occurs for the elastic energy density, of course:
1 <ll 2
Fel/V= -c -(cxx+cvv+c:z) + ...
2 3 --
I
+ 2c
y[2(
3" czz -
cxx+cyy)2 1
2 + 2(c X X - cyy)
2]
(7b)
The group-theoretical stiffness parameters can be expressed in the conventional (cubic)

elastic stiffness coefficients:
The material is (elastically) isotropic when c" = cY •

The magnetostriction in the cubic symmetry can be described as
A = ~Aa.o + A .2
y
G(a~ - a
f;
a~)(~~ - ~r; ~i) + ~(af - a~)(~r - ~i) ]
+ 2At:.2(a2a3~2~3 +a3al~3~1 +ala2~1~2) +.... (8)
Here {~;} represent the direction cosines of the measurement direction (of A = ~l/l) with
respect to the crystal axes.
The first-order coefficients ofmagnetostriction of cubic materials are then
Now, the anisotropic Joule magnetostriction is essentially described by the two coefficients
p.2 and A£,2. The familiar magnetostriction constants AIOO and Alii represent the relative
change in length measured in the [100] and [Ill] direction, respectively, when the
magnetisation is directed along the named measuring direction. They are related to the
coefficients given above by:
AIOO = (2/3)A y •2 and Alii = (2/3)A£,2 (see also fig. 3).
For uniaxial (hexagonal) symmetry the 6 strain components are subdivided in two
(invariant) one-dimensional subsets (indicated by the superscript a, and subscripts 1 and
2 for the volume dilatation and the axial deformation, respectively), and two different
two-dimensional subsets, indicated by y for deformations in the (hexagonal) plane, and
by e for 'skew' deformations. These modes are also depicted in fig. 3. In this case, the
magnetostriction can be expressed as
A= ~A<l
3 I
·o +A<l.O(R2
2"'3
_~)3 + [~A<l3.2 I
+ ~A<l
2 2
.2(R2 "'3
_ ~)](a2
3 3
_~) 3
+ ).Y'2[~(~r - ~i)(ar - aD + 2ala2~1 ~2 ]

+ 2)..t:.2(a2a3~2~3 + a3 al ~3~d. (9)
Notice here the uniaxial deformation, A;'O, independent of the direction of the magnetisa-
tion, and the contribution to the volume magnetostriction, A~,2, which does depend on the
magnetisation direction.
Experimentally, one often tries to measure the magnetoelastic coupling parameters by
measuring the anisotropy induced by a tensile stress, say, applied to an isotropic 'ribbon'
(Villari effect). Choosing the x-axis along the direction of the applied stress a , we have
only one non-zero component of the stress tensor: U x x = o . In the notation established
above, we write the extra energy terms as -UxxE xx = -UExx = -ue/3 - (uj3){2(Exx -
ej3) - (Ezz - ej3) - (Eyy - ej3)}, whence the extra strains e =ujc" ,and (exx - ej3) =
2u j3c Y, (Eyy - ej3) = (ezz - ej3) = -u j3c Y, giving rise to the magnetoelastic coupling
contributions [B U,Oej3 = ]B,,·ouj3c U = -AU,Ouj3, and [BY,2(e x x - ej3)(ar - Ij3) +
cycl. = (3j2)By,2(E xx - ej3)(ar - Ij3) = ] By,2(u jcY)(af - Ij3) = -Ay,2u (a r -
Ij3) = -(3A suj2)(af - Ij3). In other words, the tensile stress induces a uniaxial
anisotropy
(10)
In performing such experiments on isotropic materials, one is accustomed to express

the elastic stiffness parameters in the experimentally more readily accessible 'technical'
parameters E (Young's modulus) and v (Poisson ratio). The relative change in length, in
the direction of the tensile stress a is, by definition, given by (6.1jl)1I = a j E, whereas
v = I(1:11jlhj(1:11jl) I I· For several magnetostrictive films and substrates, E and v values
are listed in table I. Some useful relations are:
E = (CII - cl2)(1+ v) = (1 + v)c Y = 3c"c Yj(2c" + c Y) = c"(1 - 2v),

v = cl2j(CII + Cl2) = (c" - c Y)j(2c" + c Y ) ; I - v = (c" + 2c Y)j(2c" + c"),
Since thin magnetic films are deposited on a non-magnetic substrate, the actual strains,
and thus the induced anisotropy, depend on the magnetoelastic coupling coefficients of
TABLE I
Young's modulus (E) and Poisson's ratio (v) for several magnetostrietive films and different substrates
Material E (GPa) v References
a-R-Fe 40 0.4 Wada et aI. (l997e)

a-R-Fe 50 0.3 Quandt (997)
n-R-Fe 80 0.3 Quandt (997)
a-R-Co 80 0.31 Due et aI. (1996)
TbFeJFe 80-260 Quandt and Ludwig (1999)
W 345 0.28 Wada et aI. (l997e)
Ta 186 0.3 Wada et aI. (l997e)
Other metals ~200 0.31 Betz (1997)
Glass 72 0.21 Due et al, (1996)
Si [1(0) 130.19 0.278 Betz (1997)
Si (110) 169.16 0.037 Betz (1997)
\04 N.H. Due and P.E. BROMMER
the film, and on the elastic properties of the substrate as well as on those of the film.
Choosing the z-axis to be normal to the planar surface of the film (and substrate), the strains
exx, eyy , and exy in the magnetic thin film are imposed by the corresponding strains in the
substrate (more precisely: the equality of the strains is imposed as boundary condition).
This situation is treated for instance by Du Tremolet de Lacheisserie (1995). Notice also
the treatment of the case of hexagonal symmetry by Gutjahr-Loser et al. (2000).
In the experiment discussed above, for instance, the tensile stress a is applied (along
the x-direction) to the substrate. For an amorphous (not extremely thin) film neglecting
surface effects, one finds then two contributions to the induced anisotropy:
3/2(e xx +eyy)(a~ - 1/3){-By·2c" J(c" +2cY ) }

+ By,2{Y2(e xx - eyy)(a? - aD + 2exyala2}. (lla)
Neglecting the influence of the film, we find for the strains in the substrate (and thus also
in the film): exy = 0, and
(exx + eyy) = a(l - vs ) / E s, (exx - e yy) = a(l + vs ) / E s

(subscript s means 'substrate').
Recalling )"y,2 = -By,2/c Y , 3c Y c" [tc" + 2c Y ) = Er/(l - vr) and c Y = ErI(I + vr)
(subscript f means 'film'), one finds
I
Find(a) = 2aAy·2(Er/Es){(a5 - 1/3)(1- 1.1,)/0- vr)
- (a? - aDO + vs)/O + vr)}. (lIb)
For E r = E sand vr = v.. eq. (II b) is reduced to eq. (0). In case the magnetisation vector
is confined to the film plane we have
and in case the magnetisation vector is confined to the xz-plane (a2 = 0)
Find(a) = Kind(a)(a5 - const)

=aA y,2(Er/ Es){[(l - vsvr)/(I - v?)]a5 - const]. (lId)
The elastic properties of the substrate can be determined more accurately than those of the
film. Hence, in principle, the magnetoelastic coupling parameter By,2 can be determined
more accurately than the magnetostriction coefficient Ay •2 • An analogous conclusion can
be drawn with respect to 'bending' experiments (see e.g. section 3.1: the magnetoelastic
cantilever method).
One may note that the relation between the actual surface layer (a few atomic layers, see
next subsection) and the 'film' is quite analogous to the relation between the 'film' and the
'substrate'. Thus, the above derivations can be applied in that case too.
Finally, we remark that for the higher-order coupling terms, i.e. non-linear in the
strains, analogous symmetry considerations lead to the correct 'group-theoretical' invariant
magnetoelastic energy contributions (see e.g. Du Tremolet de Lacheisserie (1993». In fact,
it has been demonstrated (see e.g. Sander (1999» that, in accordance with the suggestion
of O'Handley and Sun (1992) for epitaxially grown films, second-order magnetoelastic
coupling parameters must be taken into account because of the large 'epitaxial' strains
due to the mismatch between substrate and film. Fiihnle and Komelj (2000; see also
references therein) proposed a way to determine these second-order parameters separately
by measuring magnetostrictive stress and magnetic anisotropy in combination.
2.3. Surface and interface effects

The discussion up to now is satisfactory for bulk magnetic materials, even when ribbon-
shaped, having a thickness of some micrometers, still very substantial as compared with
the interatomic distances. For nanoscale thin films and multilayers, however, surface
and interface effects are important. Neel (1953, 1954) recognised that at the surface,
the breaking of the symmetry (leading to lower co-ordination numbers and 'missing'
pair interactions) would give rise to surface magnetic anisotropy. Within localised-spin
models, the surface magnetic anisotropy is associated with effects occurring only at
the surface planes. Within itinerant-electron models, the changes in magnetic anisotropy
due to the surface are related to electronic states extending into the interior of the
magnetic materials. In an analogous way, the (magneto)elastic coefficients can be affected.
Moreover, as pointed out by Du Tremolet de Lacheisserie (1995), the lower symmetry at
the surfaces may necessitate extra (magneto)elastic coupling coefficients. Up to now, most
theoretical models for surface magnetostriction are still rather phenomenological, although
Freeman's group appears to have developed a promising simplification such that 'ab initio'
calculations of the surface or interface magnetostriction become feasible (see references in
Szymczak 1997; Shick et al. 1998; Wu et al. 1998; Wu and Freeman 1999 and Freeman
et al. 1999). Otherwise, the problem of surface magnetostriction can be developed in the
spirit of the Neel model of the surface anisotropy (Zuberek et al. 1994). Detailed theoretical
calculations of the surface contribution to the magnetoelastic energy have been performed
in the framework of the (pseudo- )dipolar pair model (Szumiata et al. 1993, 1999). Du
Tremolet de Lacheisserie and McGrath (1995) have shown that single-ion terms can also
be incorporated in such an approach.
The relative influence of the surface (or interface) effects, of course, must decrease
with increasing thickness t of the layer(s). Since the surface effects contribute 'per unit
surface area', one defines, for the layer, effective parameters such that Beff , or beff, equals
Bbulk + 2b surf / t, Here, the factor 2 is put in, because a layer has two surfaces. In practice,
this simple 1/ t dependence works satisfactorily. For nanocrystallites, both the volume
fraction and the 'volume to surface ratio' of the crystallites (i.e. their radius) must be taken
into account (see also section 8). In connection to these effects, (non-linear) contributions
to the magnetoelastic coefficients due to surface strains and surface roughness are expected
to be considerable.
3. Determination of magnetostriction of thin films
For bulk ferromagnetic materials, the magnetostriction can be determined directly by

measuring the relative deformation in one direction as a function of the magnetic field:
"A(H) = !!..l/l. Thin magnetic films, however, are deposited on the planar surface of a
non-magnetic substrate. As discussed in the preceding section, in such bimorphs, the
observed strains depend on the magnetoelastic coupling coefficients of the film, as well
as on the elastic properties of the substrate and those of the film. Moreover, in case
surface or interface contributions become important, a larger number of coefficients is
needed to describe the magnetoelastic effects because of the symmetry lowering (see
preceding section). The experimental methods treated below do not permit to determine all
of the magnetoelastic-coupling coefficients. Nevertheless, quantities relevant for technical
applications can be determined experimentally, of course.
Various experimental methods have been developed for investigating the magnetoelastic
properties of thin films and nanoscale magnetic systems. In the following subsections,
we discuss the most important ones: (i) the magnetoelastic cantilever, (ii) strain induced
anisotropy, (iii) magnetostriction in spin valves, (iv) strain modulated ferromagnetic
resonance, (v) secondary-electron spin-polarisation, and (vi) strain-induced anisotropy due
to the spontaneous strains.
For technical applications (sensors), Hristoforou et al. (1998) have developed an
interesting method to determine the field-dependence of the magnetostrictive strain, based
on measuring the delay due to Bloch-wall motion.
3.1. The magnetoelastic cantilever method

In this method a magnetic film deposited on one side of a cantilevered substrate is
magnetised. The resulting 'magnetic stresses' will, for example, tend to lengthen the
magnetic film. Hence, the substrate will be bent (fig. 4b), with anticlastic deformation (i.e,
in saddle form, see fig. 4a, where the field is taken to be directed along the x-direction).
Obviously, the bending will depend on the elastic properties of both the film and the
substrate, as pointed out by Du Tremolet de Lacheisserie and Peuzin (1994, 1996), Van
de Riet (1994), and Weber et al. (1994). Notice that some errors in the older literature
were amended in these works. See also the debate in Klokholm and Jahnes (1996). The
theory of bending of plates was applied to obtain precise results, e.g. for non-isotropic
substrates (Ciria et al. 1995), see also the review of Sander (1999). Szymczak (1999)
(see also references therein) stresses the importance of the boundary conditions due to
the clamping of the cantilever, and concludes that often 'finite-element' calculations are
necessary. Also Iannotti and Lanotte (1999) treat the effect of clamping.
The cantilever bending-technique requires a sensitive displacement detection such as a
capacitance probe (Klokholm 1976, 1977), optical interferometry (Sontag and Tam 1986),
a tunnelling tip (Wandass et al. 1988) or angular detection (e.g. laser beam deflection, Son-
tag and Tam 1986; Trippel 1977; Tam and Schroeder 1988; Betz 1997; Sanderet al. 1998).
Using the laser beam deflection method, one determines the bending angle "', and
subsequently the displacement D(~ L . ."/2) at the end of the film (x = L; fig. 4b). Then,
z L
x
Fllm",ltb thickness tf
Substrate with
~ thickness t•
.Holder
(a)
Fig. 4. (a) Anticlastic deformation of a bimorph in a magnetic field (saddle fonn). (b) Fixation of a bimorph
on its sample holder and measurement principle of the defonnation of any magnetostrictive bimorph using the
deflection of a laser beam.
an (effective) magnetoelastic coupling coefficient, or rather an 'effective magnetic stress'

b(H) is calculated as
b(H)
Es
= 3(1 + vs)
D(H)
L2
t; e, ts L\(I/R )
r; = 6(1 + v ) ts
2
L .
(12)
s
Here, t is the thickness, E is the Young modulus, v is the Poisson ratio; the subscripts f
and s stand for film and substrate, respectively (see also preceding section). In the second
equality (applied, for instance, by Sander et aI. 1999), RL is the (longitudinal) radius of
curvature (signs should be chosen in such a way that positive b corresponds to negative
magnetostriction, since e.g. ).,y.2 = -By·2/c Y). Assuming that the magnetic film is thin
in comparison to the substrate, but that surface effects can be neglected, and ignoring an
isotropic contribution, Du Trernolet de Lacheisserie (1995, 1999) has shown that, for an
isotropic film magnetised to saturation in the direction a, the magnetoelastic parameter
b(a) measures the bulk value By·2 as
(13)
In practice, one determines bn(H) with the field directed along the film direction (x
axis), and b1. (H) with the applied field along the y-direction (still inside the film plane).
=
At saturation, one has at = I and az I, respectively. When applied to cases where
surface (interface) effects are important, it turns out that, with these field orientations, only
the effective parameter b y · 2 (corresponding to By·2 in bulk material) can be determined

(Du Tremolet de Lacheisserie and Peuzin 1994; Du Tremolet de Lacheisserie 1995).
The difference between the saturated b sat values just yields the (effective) magnetoelastic
coupling coefficient b y · 2 = bll sat - b.l sat [= By·2 for relatively thick films]. In order to
facilitate comparison with other data, it is common practice to express these results as
'coefficients of magnetostriction' All, A.l and Ay·2 by:
(14a)
(l4b)
In general, it is difficult to determine correctly the elastic parameters E f and Vf of thin

films. Hence, this translation (eq. (l4a), (l4b» may introduce a large uncertainty in the A
values.
3.2. The strain induced anisotropy method

This method is based on the Villari effect: applying a uniaxial stress to a ferromagnetic
substance induces a magnetoelastic anisotropy which may modify all the parameters of its
magnetisation curve, e.g. magnetic susceptibility, coercive force, and so on. Some experi-
mental techniques to measure the strain-induced anisotropy are discussed shortly below.
An original technique was developed by Konishi et al. (1969) and extended later on
by Narita et al. (1980). This method is known as the small-angle magnetisation rotation
(SAMR) method: a static bias field HII and a tensile stress (a) are applied in the direction of
the film; a small-amplitude ac driven field H.l = H.l max sin(wt) is applied perpendicular
to HII' It is this ac magnetic field that induces a magnetisation rotation, which can be
detected as an induced voltage in a sensor coil wound around the film axis. This response
is measured as a function of the applied stress. i.e. of the strain-induced anisotropy. An
experimental SAMR set-up is illustrated in fig. 5. The sensitivity of this method was
2 x 10-7 (Narita et al. 1980) and even much higher. namely 10-9 (Hernando et al. 1983).
Glassy
Ribbon
Fig. 5. Experimental SAMR set-up. After Du Tremolet de Lacheisserie (1993).

O'Handley et al. (1993) presented a method which allows magnetoelastic coefficients to

be determined from arbitrarily shaped M -H curves taken at different strains, by calculating
the area between them over a conveniently chosen magnetisation range. This reduces
error in the magnetoelastic coefficients by avoiding hysteretic effects at low fields and
ambiguity about saturation at high fields. These authors illustrated how the magnetic and
magnetoelastic coefficients can be determined from the M-H loops using the magneto-
optic Kerr effect (MOKE).
For thin films with a perpendicular anisotropy (easy axis normal to the film plane),
Huang et a1. (1995) determined magnetostriction (As) and anisotropy (K) values, by using
the so-called 'initial-susceptibility method'. An ac magnetic field was applied in the film
direction, and the induced magnetisation component in the field direction was measured.
These authors deduced K and AS from the X -I vs. a plots, using:
110 M 2
X= s (15)
2K - 3Asa
Here, M s is the saturation magnetisation. Notice, that apparently, the stress transfer from
the kapton substrate to the deposited film was ignored (compare eq. (15) with eq. (11d».
A consistent result was obtained by determining the anisotropy from the hysteresis
loops measured in the hard and easy magnetisation directions, using a vibrating sample
magnetometer.
Experiments using a standard electromagnet can be performed by measuring the strain
modulated biased transverse susceptibility (Kraus 1989). In this measurement, a static bias
field is applied in the film plane, now perpendicular to the film axis, while the ac driving
field is parallel to that axis. The susceptibility (transverse to the bias field) is detected by
the pick-up coils and its reciprocal value is then a linear function of both the de bias field
(H de) and the magnetoelastic field (Hu = 3Asa/ Ms; see also eq. (l lcj):
I I
X;; = -(Hde - H a - Hs). (16)
Ms
Here, Hs is the anisotropy field (Ny - Nx)M s •

An increasingly important tool to determine the strain-induced anisotropy is MOKE
(magneto-optical Kerr effect). In section 2 we mentioned already the calculations by
Freeman et a1. (1999). Experimentally, e.g. Ali and Watts (1999); (see also references
therein) apply a bending device to induce strains in a controlled way, and determine
the (local) curvature and the strains by optical interferometry or by direct measurement
(stylus). The properties of the substrate are incorporated in a finite-element modelling
calculation, thus allowing an absolute determination of the film properties. Compare also
Stobiecki et al. (2000), who studied the strain induced anisotropy in FeB/CulFeB trilayers,
using Kerr magnetometry (MOKE).
Other methods based on the Villari effect can be found in the paper by Lachovicz and
Szymczak (1984).
3.3. Magnetostriction in spin valves

An alternative to the cantilever beam method, called the bending method, was introduced
by Baril et al. (1999), who measured the strain-induced magnetoelastic energy for spin
valve structures. A spin valve consists of two thin conducting ferromagnetic layers,
separated by a non-magnetic layer, which is thick enough to reduce the magnetic coupling
between the two magnetic layers. The upper layer is coupled to the top antiferromagnetic
layer. The lower one is deposited on the substrate (see Dieny et al. 1991b). The samples are
strained by means of the bending device shown in fig. 6. The strain in the film is tensile,
and as the bending is small, it is considered to remain in the film plane. The M-H loop is
directly determined from the deduced resistance (R) versus magnetic field curve
M= 2M s (
R(a ) - R(O) I)
- - . (17)
~RGMR 2
Here, a is the angle between the magnetisation directions of the two ferromagnetic layers
which form the spin-valve.
Assuming that the magnetic moment of the upper layer is rigidly fixed, and taking
into account the (weak) coupling of the two ferromagnetic layers (coupling field Hi), the
magnetostriction can be calculated from the area between the curves obtained without and
with strain (subscripts u and s, respectively):
In this measurement, the hysteresis problem was solved by applying a constant

transverse field. In eq. (18), this transverse field does not occur due to cancelling of terms.
The same holds for the (in-plane) anisotropy and the shape anisotropy. Baril et al. (loc. cit.)
claim that this is a reliable method, giving results consistent with the cantilever method and
with a sensitivity better than 1 x 10- 7 . It is perhaps worthwhile, however, to consider all
~ x
substrate
~Vp it
1
Fig. 6. Bending tool for the measurements of magnetostriction in spin valves. After Baril et al. (1999).
MAGNETOELASTICITY IN NANOSCALE HETEROGENEOUS MAGNETIC MATERIALS III
assumptions critically, taking into account the weak coupling of the ferromagnetic layers
and also the elastic properties of the substrate.
3.4. The strain modulatedferromagnetic resonance (SMFMR) method

Magnetic resonance has been recognised as a powerful technique to study the magnetocrys-
talline anisotropy energy of ferro magnets (ferromagnetic resonance FMR) and crystalline
electric fields in paramagnets (electron paramagnetic resonance, also named electron spin
resonance ESR). The technique of ferromagnetic resonance under stress was firstly devel-
oped by Smith and Jones (1963) (see also Smith 1968) in order to derive magnetostriction
coefficients from the shift in the resonant field caused by the application of a known sta-
tic stress to a magnetostrictive thin film. The shift arises due to the Villari effect. Using a
dynamic stress instead of the static one, Henning and den Boef (1978) have improved the
performance of the strain modulatedferromagnetic resonance (SMFMR). This technique
has been applied to measure the magnetostriction of amorphous wire (Kraus and Schnei-
dner 1977) and multilayer films (Zuberek et al. 1987, 1988, 1995,2000). Apparently, the
SMFMR method has some specific advantages, the most conspicuous one being the high
sensitivity (magnetostrictive strains as small as 10-9 can be detected) and a possibility to
measure several magnetoelastic tensor components.
The resonance equation for a thin film, which is subject to an uniaxial stress, and which
exhibits an intrinsic uniaxial perpendicular anisotropy field, may be expressed as (Bushnell
and Vittoria 1993)
(~) 2= [Hr + Ms - Hal- + 3UAs/M] X [Hr + 3UAs/Ms]' (19)
where H r is the resonant field, M s is the saturation magnetisation, Hal- is the anisotropy
field (= 2Kl-/ M«; Ks. is the perpendicular uniaxial magnetic anisotropy constant), y is the
gyromagnetic ratio and the equilibrium position of M 5 is assumed to be collinear with Hr.
Since the microwave frequency and gyro magnetic ratio are constant, changes in the
applied stress will result in a shift in the resonant magnetic field. Indeed, the 'shift' equation
is
flHr -3A5
--=-- (20)
flu Ms
Clearly, this equation allows to determine AS through the values of the stress a , the
resonant-field shift flH r and the saturation magnetisation Ms. Details of the experimental
set-up may be found in the review papers by Bushnell et al. (1992), Le Gall etal. (1989) and
in Vukadinovic's thesis (Vukadinovic 1988). Unfortunately, up to now the measurements
are limited to room temperature.
In traditional discussions based on eq. (20), the resonance conditions have been
expressed in terms of the magnetostriction coefficients. However, Du Tremolet de
Lacheisserie (1995) has found that the elastic coefficients of the substrate (SIll and SI2 S )
have entered his formulas of the resonance frequency. He showed that in the SMFMR
method only the b y •2 and ba •2 coefficients can be determined.
3.5. The secondary electron spin-polarisation spectroscopy (SESPS)
The surface of a bulk solid is generally subject to relaxation strains (mainly normal to the
surface) that can be as great as 10%. These arise from the lower symmetry and different
electronic charge distribution there relative to the bulk. The surface of a cubic solid is
generally tetragonally distorted relative to the bulk. The surface of a thin film is subject to
the same relaxation effect as is the surface of a bulk sample. The surface of a material has
an electronic structure that reflects lower symmetry and reduced co-ordination numbers
relative to the interior, say, deeper than a few atomic layers. The secondary electrons,
whose spin polarisation is measured as a probe of the magnetisation, come just from
these outermost few layers. Thus, the spin-polarisation of secondary electrons, detected
from the asymmetric spin-orbit scattering, can be used to monitor selectively and directly
the surface magnetisation. Subsequently, by straining the sample (surface), the surface
magnetoelastic coupling can be determined by measuring the strain dependence of the
surface magnetisation.
An experiment to measure the asymmetry as a function of applied magnetic field at
different values of strain was set up by Sun and O'Handley (1991). It is shown in fig. 7.
From the measured asymmetric spin-orbit scattering, A, the surface magnetisation, M surf
is determined as
(21)
Here, N is the number of magnetic atoms per unit volume, n is the total number of valence
electrons (n = n+ +n-), nB is the valence-band magneton number (nB = n+ -n-), and S
MANIPULATOR
FIELD WINDINGS
Fig. 7. Experimental SESPS set-up. After Sun and O'Handley (1991).

the asymmetric scattering efficiency of the detector. Then, from the strain dependence of
the magnetisation curves, the surface magnetoelastic coefficient B surf is derived from
(22)
=
with e t:x x , and where m 2(H) = (af(H») in our notation. The value of the Poisson
ratio of the bulk (ribbon) material, v, was taken equal to 1/3. Notice, that here B surf
is considered as energy density, so analogous to the bulk quantity By·2, evidently now
for the 'surface layers' only. The authors derived this expression by assuming isotropic
magnetoelastic behaviour. One may, however, look upon the relation between the 'surface
layers' and the 'bulk ribbon', as equivalent to the relation between a thin film and the
substrate. Eq. (22) should then be compared with (the exx-derivative of) eq. (IIa). Taking
(a~) = (a~) = (1 - {af)/2, one may deduce that, actually, the authors did apply the
(almost equivalent) approximation [1 - vv surf + (v - vsurf )j 2]f[(1 - vsurf )] = 4/3, instead
of (1 + v) = 4/3: indeed. again the elastic properties of the 'carrier' (here the ribbon) and
the 'thin layer' (here the surface layers) do enter into the expressions.
In this experiment, B surf was found to be (6.0 ± 0.2) x 105 J/m3 for the amorphous
C076Cr4B20 alloy, approximately 3 times the bulk value [+ 1.8 x lOS J/m3 ], and to be
-(1.6 ± 0.2) x lOS J/m3 for the amorphous Fe77Cr6B17 alloy, about half the bulk value
[-3.0 x 105 J/m3 ]. The 'surface magnetisation', was found to be 92% and 63% of the bulk
values for the Co-based and the Fe-based amorphous alloy, respectively.
3.6. The strain-induced anisotropy due to the spontaneous strains

Bochi et aI. (1994) proposed a phenomenological equation that describes the film thickness
dependence of the total effective magnetic anisotropy energy density of an epitaxial
sandwich fcc (111 )Co/Cu. They showed that by fitting the measured effective anisotropy
energy density with their equation, one can extract the surface magnetic anisotropy as well
as the surface magnetoelastic coupling coefficients. A surprising result was obtained for fcc
(l1I)Co/Cu superlattices (grown, on GaAs (110) substrates, by Lee et aI. 1990): the Neel
surface magnetic anisotropy energy is KS sin 2(9), with KS = 0.47 erglcm 2, whereas the
surface magnetoelastic coefficient BS is found to be BS = -25.5 erg/em", In this method,
instead of artificially created strains (as in the preceding subsection 3.3) the strain induced
anisotropy arises in the process of sample preparation, due to the Co-Cu misfit m = 1.9%.
In fact, the strain e was taken to follow e = mtcu/(tco + tcu). The actual strain e was
determined by X-ray scattering.
Of course, the different methods are often combined. (Clamped) cantilevers (section 3.1)
and bending devices (section 3.2) have also been used to determine the 'spontaneous'
strains during the depositing process, or those caused by different thermal-expansion
coefficients. As an example, we refer to Sander et aI. (1999), who determined the
magnetoelastic coupling parameters as well as the epitaxial misfit stress in ultrathin
Fe(100)-films on W(100) substrates. The change of sign of the magnetostriction constant,
positive for Fe films thicker than 20 nm, and negative for thinner films, is ascribed to the
strain dependence of the magnetoelastic coupling (higher order terms, see remarks in the
final part of section 2.2), in combination with the fact that the strains are much larger in
the thinner films. Gutjahr-Loser et al. (2000) performed a similar study on (ultra)thin Co-
layers, grown on W(OO 1). These authors suggest that a description with higher-order terms
only may be too simple, because of the structural changes in the (ultra)thin layer forced
by the epitaxial strains. Notice also that for such ultrathin layers, magnetic-anisotropy
oscillations and quantum well states were observed (Weber et al. 1995, 1996a, 1996b).
4. Giant magnetostriction in rare-earth-transition metal thin films
4.1. General consideration ofmagnetism in rare-earth-transition metal alloys

The rare earth-transition metal compounds are considered to be formed by the association
of the relatively narrow 3d band with a wider 5d band with higher energy. The
electronegativity difference between the constituents gives rise to a transfer of 5d electrons
towards the unfilled 3d band. Since the screening of the nuclear potentials by the electrons
is modified, the two bands draw together, leading to 3d-5d hybridisation states at the top of
the 3d band and at the bottom of the 5d one. This strong 3d-5d hybridisation does not only
result in the formation of the rare-earth intermetallics, but also determines the physical
properties of the existing compounds. In the compounds based on rare-earth and transition
metals, it is found, as a general rule that, due to the hybridisation between the 3d and
5d states, the 4f-3d spin-spin coupling is always antiferromagnetic (Campbell 1972; Due
1997). Taking into account the coupling between the spin and orbital moments of the 4f
electrons, one can explain the parallel and antiparallel alignments of the 3d (Fe.Co.Ni)- and
4f-moments in the light- (J = IL - 51) and heavy- (J = L + 5) rare-earth compounds.
The rare-earth elements can be separated into two groups, as already mentioned, of the
light elements consisting of Ce, Pr, Nd, Pm, Srn, Eu and the heavy ones consisting of
Gd, Tb, Dy, Ho, Er, Tm and Yb. Each of these groups can be subdivided into two sub-
groups according to the sign of the Stevens factor CX). This division takes into account
the angular distribution of the charge density of the 4f electrons, which is in the oblate
(CX) < 0) or prolate (CX) > 0) form (fig. 8). As mentioned in section 2 (fig. I), with the
oblate distribution (CX) < 0), the magnetic moment is perpendicular to the plane as in Nd
and Tb, for example. In this case, the magnetostriction is positive. For the case where
CX) > 0, i.e. the electronic density distribution in the prolate form, the magnetic moment is
aligned along the axis of the "rugby" and the magnetostriction is negative.
Huge magnetostriction is expected to occur in those compounds, which combine a high
rare-earth concentration with a high ordering temperature. This is the case for the Laves
phase RFe2 compounds. The corresponding crystalline RC02 compounds, however, show
a much lower Curie temperature (Tc) due to the metamagnetic behaviour of the 3d(Co)
electrons (Due and Goto 1999; Due and Brommer 1999). They exhibit huge volume as well
as Joule magnetostriction, but at low temperatures only. For this reason, these compounds
are not particularly interesting for applications.
Amorphous alloys are characterised by a structural disorder where each atom constitutes
a structural unit. In this state, the low mass density and the loss of the periodicity
enhance the localisation of the 3d electrons in the rare earth-transition metal alloys. In
Light-lanthanide elements
J= IL-si
<XJ<O <XJ>O
~
Ce
e: Pr
roNd
~Pm (D
8m Eo
Heavy-lanthanide elements
J=L+S
<XJ<O <XJ>O
([)
Tb
ro
Dy
(l)
Do
([)
Er
~Tm (l)
Yb
Fig. 8. Angular distribution of the 4f charge density of lanthanide atoms for Jr = J (effective moment parallel
to the z-axis). After Thole in Coehoom (1990). In Ceo Pr, Nd, Tb, Dy, Ho the charge density is oblate (aJ < 0).
in Pm, Srn, Br, Tm, Yb it is prolate (aJ > 0). In Gd, Lu (L = 0). the charge density has spherical symmetry.
amorphous alloys. at a certain concentration, the 3d magnetic moment is higher, but the 4f-
3d exchange interactions are somewhat weaker in comparison with the crystalline alloys.
These parameters, however, follow the same tendencies with varying the concentration
(Due and Givord 1996). These results confirm again the systematic variation of the 3d-
5d hybridisation and its influence on the magnetism of the rare earth-transition metal
compounds. The decrease of the transfer and of the associated hybridisation allow to
maintain the strongly ferromagnetic character over a large range of concentrations, i.e.
there exists a large value for the critical rare-earth concentration where the magnetism
disappears in the amorphous alloys. These effects lead to an enhancement of the Curie
temperature when going from the crystalline state to the amorphous state: for the R-Co
alloys, e.g. the ordering temperature of c-TbC02 equals 230 K (Due and Brommer 1999),
whereas Tc of a-TbC02 is comparable with that of a-TbFe2 (Tc > 400 K) (Hansen et
al. 1989; Hansen 1991). For the a-RFe compounds. however, the magnetic properties are
not improved by the amorphisation, but just the opposite. Due to the amorphous structure,
116 N.H. DUC and P.E. BROMMER
Tb
f (a)
Co ~c.
(b)
Tb
~ (c)
Fe
~
(d)
Fe
Fig. 9. Sperimagnetic structures in amorphous Sm-Co (a), Tb-Co (b), Srn-Fe (c) and Tb-Fe (d).
the Fe-Fe interatomic distance is distributed and the Fe-Fe exchange interactions can be
sometimes positive or negative. This leads to frustration and freezing of the Fe moments,
and to the occurrence of asperomagnetism (M s > 0) or speromagnetism (M s = 0). The
latter is observed for Y l-xFex (Coey 1978; Chappert et al. 1981).
Sperimagnetism occurs in two-subsystem structures like rare-earth-transition metal
alloys of composition RI-x T x where the 4f-3d exchange interactions are not modified (Due
and Givord 1996; Danh et al. 1998), but the large spin-orbit coupling of the non-S-state
rare-earth gives rise to large local anisotropy (local easy magnetisation axis). Taking into
account the sign of the RT-coupling for the light rare earth and the heavy ones. we can again
divide the amorphous R-T alloys into four groups of sperimagnetic structures as illustrated
in fig. 9:
a) asperomagnetic LR. with collinear T (like Sm-Co),
b) asperomagnetic HR. with collinear T (like Tb-Co),
c) asperomagnetic LR, with non-collinearT (like Sm-Fe),
d) asperomagnetic HR, with non-coIlinearT (like Tb-Fe),
In these sperimagnetic structures, the subsystem magnetisations are reduced with respect
to the collinear magnetic structure in the crystalline compounds. As a consequence, the
saturation magnetostriction As is decreased.
4.2. Magnetostriction ofamorphous rare earth based thin films

The common approach to amorphous magnetostrictive thin films is to reduce the
macroscopic anisotropy to achieve saturation of the magnetostriction in low magnetic
fields. As a tradition. the R-Fe based alloys were thought to be the best candidates.
giving a giant magnetostriction in bulk as well as in film materials. The magnetic and
magnetostrictive properties and magnetic anisotropy of the amorphous binary TbI-xFex
400
300
-e 200
100
o
o 0.2 0.4 0.6
lJoH (T)
Fig. 10. Room-temperature magnetostriction for TbI_xFex films. After Miyazaki et a1. (1997).
films as a function of the Th concentration have been the subject of many investigations
(Forester et al. 1978; Hansen et al. 1989; Hayashi et al. 1993; Quandt et al. 1994a; Grundy
et al. 1994; Huang et al. 1995; Hernando et al. 1996 and Miyazaki et al. 1997). Jerems and
Greenough (1999) studied amorphous melt-spun (ThFe2)t-xBx alloys.
Magnetostriction curves measured in magnetic fields up to 0.7 T applied parallel to
the film plane for several a-Tht-xFex thin films are presented in fig. 10 (after Miyazaki
et al. 1997). For all samples, except for the x = 0.944 sample, which has the bee-Fe
structure, the field dependence of the magnetostriction shows a relatively large random
anisotropy. The values of the magnetostriction in the as deposited a-ThI-xFex thin films
collected from different sources are summarised in fig. 11. Although there is some
scatter they show a compositional variation of the magnetostriction, which is very similar
to that observed for polycrystalline Tb-Fe compounds. A magnetostriction maximum
occurs around 0.55 ~ x ~ 0.67. In fact, at JLoH = 0.7 T, the largest magnetostriction of
about 480 x 10-6 was found at x = 0.67 which corresponds to an alloy of the ThFe2
composition (Miyazaki et al. 1997, see fig. 11). Note that, for these systems, Tc shows
its maximum at the same composition range. Thus, the giant magnetostriction could
be an optimal combination of the lanthanide concentration and the magnetic ordering
temperature. The magnetostriction maximum shifts to higher Th contents with decreasing
applied magnetic field, and a magnetostriction maximum of 220 x 10-6 was obtained
at x = 0.58 in JLoH = 0.1 T. Indeed, Danh et al. (2000) and Due et al. (2ooob) have
succeeded to enhance the magnetostriction even at lower fields PI.U = 340 x 10-6 at
Tbtel7 Tbte:u TbFe3 TbF~.
Tb1_.Fe.
300 • .o.eTp.dlll84)
• .o.44Tputdyol.0I.1t194)
• .1.5T".....0I. .. 1I7III
. . . 1.8T....".ot.ot.ll1l13)
200
100
•
0.1 0.2 0.3 0.4 0.5
I-x
Tb1.•Fe.
o 0.7 T
400 <l. 0.3T
o 0.1 T
300
200
100 til
o
o 0.2 0.4 0.6

I-x
Fig. 11. Magnetostriction as a function of Tb concentration for Tbl_xFex films. After Quandt (1997) (upper
panel) and Miyazaki et aI. (1997) (lower panel).
l-toH = 20 mT in TbI_AFe,Coh with x = 0.6 (fig. 12). The saturation magnetostriction

depends strongly upon the preparation condition. Films with a perpendicular magnetic
anisotropy show a higher magneto striction, however, one needs higher applied fields to
rotate the magnetisation into the film plane and then to attain saturation (see fig. 12) (Schatz
et aI. 1994; Due et al. 2000b). This perpendicular anisotropy is usually thought to be
induced during the deposition process. Heat treatments at temperatures up to T A = 450°C
are often performed to relieve any stress. Heat treatments do cause a number of clear
differences in the magnetic properties, such as the magnetic anisotropy change from
perpendicular to parallel (Riedi et al. 1998; Danh et aI. 2000; Due et al. 2000b), the
reduction of the magnetic coercive fields and the development of magnetostriction at low
fields (see e.g. fig. 12). In order to obtain a soft magnetostrictive behaviour for Tb-Fe
alloys, other attempts to reduce the magnetic anisotropy have been undertaken. Altering
the deposition conditions, e.g. by applying a r.f. bias voltage (Quandt 1994), the tensile
stress obtained can lead to an in-plane magnetic easy axis and to dramatically improved
magnetostriction at low fields. Miyazaki et al. (1997) and Wada et al. (I997a, 1997b)
600
500
400
-r
.'-'..
= 300
~
«
200
100
0
-0.8 -0.4 0 0.4 0.8
l10H (T)
Fig. 12. Parallel magnetostrietive hysteresis loops for Tb(Feo.55COO.45) 1.5 films: (I) as-deposited film and
(2) after annealing at 350°C and (3) at 450°C. After Due et aI. (2000b).
have also succeeded to enhance the low-field magnetostriction, however, by varying the
substrate temperature and the heat treatments. Magnetic-field annealing (Due et al. 1996;
Betz 1997) created a well-defined in-plane uniaxial anisotropy. Pasquale et aI. (2000)
studied stress-induced anisotropy in ThFe thin films. At the composition Th54Fe46 these
authors found optimal properties for sensor applications requiring magnetic softness and
stress sensitivity. It is interesting to compare these results with those obtained by Jiang et
al. (2000) on amorphous TbDyFe sputtered films. Notice also that for a-DYI-xFex films,
the magnetostriction has a maximum at x = 0.7 (Williams et aI. 1994). Speliotis et aI.
(1998) added Nb and Zr to ThDyFe-films in order to influence the (nano)crystallisation.
For nanocrystalline (Tho.3DYo.7)4o(Feo.95Nbo.OS)60 films, deposited at 470°C, a room-
temperature magnetostriction of 500 ppm at 4 kOe and a coercivity lower than 30 Oe
were observed.
A negative magnetostriction was actually observed in amorphous Sm-Fe thin films in
accordance with the positive sign of the Stevens factor (see section 4.1) (Hayashi et al.
1993; Honda et al. 1993, 1994). For these films, the room-temperature magnetostriction
increases rapidly in low fields due to the in-plane anisotropy. The maximum absolute 1-
values of about 250-300 x 10-6 at 0.1 T and 300-400 x 10-6 at 1.6 T were obtained on
films with 30-40 at% Sm. Honda et al. (1994) have used these magnetostrictive films for
the fabrication of trimorph ThFelpolyimide/SmFe cantilevers (see fig. 86a, in section 12).
Applying a bias voltage, it was again possible to alter the stress state to tensile stress,
which resulted in a perpendicular anisotropy due to the negative but increased saturation
magnetostriction (Quandt and Ludwig 1997).
In contrast to Tb-Fe films, crystallisation of Sm-Fe films does not result in a higher
saturation magnetostriction. The hysteresis, however, was found to be significantly
increased. Boron added to the SmFe2 alloy improves the possibility to form the amorphous
20 320
Tbt_xCo x
-
~
~
\Ill
15 240
-
~
'-' c
10 160 C
.c'" .s
0.62
5 80
0.53
0 0
0 0.5 1.0 1.5 2.0
~H(T)
Fig. 13. Room temperature magnetostriclion for several a-Tbj c, Cox alloys. After Givord et al. (1995).
state, reduces the local magnetic anisotropy energy (Polk 1972) and, thus, can enhance
the low-field magnetostriction. This was examined by Kim (1993) on the de-sputtered
(SmFez)lOo-xBx system with a thickness of 0.3 mm. In these alloys, the saturation
magnetisation decreases with increasing x, whereas the saturation magnetostriction
significantly increases. The highest saturation magnetostriction, of -670 x 10-6 at 1.0 T
with an effective magnetostriction of -490 x 10-6 at 0.03 T has been obtained for a-
(SmFez)99.Z6BO.74. A similar result was reported for amorphous bulk alloys (Fujimori
et a1. 1993; Shima et a1. 1997). Batt et a1. (2000) observed decreasing (absolute)
magnetostriction values upon substituting Co for Fe in melt-spun Sm(Fe,Co)z ribbons and
hot-pressed compacts.
The magnetostriction of a-Thu.j Co, (0.78 ~ x ~ 0.38) thin films was studied
intensively by Betz et a1. (1999) (see also Givord et a1. 1995; Betz 1997). Their reasons
for expecting a larger magnetostriction in a-Tb-Co than in a-Tb-Fe is that effectively
(see fig. 9(b and d)), the Tb-Co exchange interaction in the Tb-Co films are expected
to be higher, and consequently, (i) the Tb-sperimagnetic cone-angle will be reduced, and
(ii) the ordering temperature in a-Tb-Co will be raised. Indeed, it was shown that these
alloys are ferrimagnets above room temperature for x ~ 0.62. For x ~ 0.67, T C reaches
approximately 500 K, which is already higher than that of a-TbFez. Room-temperature
magnetostriction is shown in fig. 13 for several a-Tb l-xCOx films. The magnetostriction is
always positive. The compositional variation of magnetostriction is shown in fig. 14. It is
clearly seen that the room temperature magnetostriction increases rapidly with increasing
Co content as soon as the films become magnetic at that temperature, and reaches a
maximum around x = 0.71 (bll = -20 MPa, b Y ' z = -24 MPa under JLoH = 1.9 T which
corresponds to All = 320 x 10- 6 , AY' Z = 400 x 10-6 assuming Er = 80 GPa and Vr = 0.3).
For comparison, the magnetostriction results for a-TbFe measured in a field of 1.6 T by
Hayashi et a1. (1993) are also included in the same fig. 14. These earlier published results
were corrected by multiplying with a correction-term (1 - vs)/(l + vs) for the use of
25
Tb
1'1
FeI
~/
...•••• -,.
"
400
350
20 (Hayashi et al.) ... ,
, 300
.-.
~
~
15
. 250 »;c
::g , N
'-' 200 .-.
....
... ;.
~
10
•
~
~ 150 J
100
5
I 50
0 0
0.4 0.5 0.6 0,7 0.8 0.9 1
X
Fig. 14. Magnetostriction as a function of Tb concentration for a-TbI_xCOx thin films (after Betz 1997) and for
a-TbI_xFex ones (after Hayashi et al, 1993).
0 0
\
-5 \ -5
.-.
~ \\ +
~
,\...... ...r:r
U
0
~
'-'
-10 ...~'!.a-:
~::t"r~~ ~
-10 g
~
... i
~
I
-IS -15
-:P
·20 -20
0 0.5 1 I.S 2
~O H (T)
Fig. 15. Magnetostriction of SmO.37CoO.63 and TbO.36COO.64. After Betz (1997).
the former Klokholm's formula (Betz 1997; Betz et al. 1999; see also the discussion in
section 2.2).
It is also meaningful to consider the magnetostrictive susceptibility obloH (and/or
0).,10 H), which is of significance for applications. For the films under consideration, at low
applied magnetic field, the magnetostrictive susceptibility is maximal for x = 0.65. Betz
et al. (1999), thus, have succeeded to show the similarity of the compositional variation of
the magnetostriction in both a-ThFe and a-ThCo alloys and opened up a promising series
of magnetostrictive alloys for potential applications.
A comparison of the magnetostriction of Sm-Co and Tb-Co systems is shown in
fig. 15 for SmO.37CoO.63 and Tb0.36COO.64. The Sm-Co alloy shows a behaviour, which
is comparable to that of the Tb-Co one, but with the opposite sign and a somewhat smaller
magnetostriction in absolute value. In addition, the Sm-Co alloy is magnetically harder
than Tb-Co: its magnetostriction saturates around 0.3 T and the coercive field is about
0.03 T. The high-field magnetostrictive susceptibility, however, is smaller in the case of
Sm-Co. Since crystal field effects are supposed to be proportional to a)(O~}«r4r/ao)2)
(see e.g. the review by Franse and Radwariski 1993, table 2.4), it is particularly interesting
to compare these factors and the observed magnetostriction for these two alloys. The values
of a) (O~}«r4f/ao)2) are +40.2 x 10- 2 and -54.8 x 10-2 and the values of by·2 at 300 K
are + 11.0 and -18.3 MPa for the corresponding Sm-Co and Tb-Co films, respectively.
One finds that the ratio between the operators is comparable with that between the two
magnetoelastic coefficients:
la)(O~}«r4r/ao)2)TbCo /aJ(O~}«r4r/ao)2)SmCol = 1.37 and

\bIlTbCo/bnSmCol = 1.67.
A few amorphous Sm-Co alloys have also studied been by Quandt et al. (1994).
A (negative) magnetostriction has been confirmed, somewhat smaller (by 30%-50%) than
that of Tb-based alloys.
The maximum magnetostriction found in the amorphous state for both Tb-Fe and Tb-Co
alloys is much lower than in the crystalline state. There are three reasons to be considered
for this difference. (i) The structure is not the same in the crystalline and the amorphous
state. Nevertheless, it is often argued that the local environment in the amorphous state
is reminiscent of that found in the crystalline one (see e.g. Hernando et al. 1997). As a
starting point for the discussion, differences in the local environment can be neglected. The
measured differences in magnetostriction between the crystalline and amorphous states
might then be attributed to the facts that (ii) some compositions have a lower ordering
temperature in the amorphous state which means that the magnetocrystalline anisotropy
and so the magnetoelastic coefficient is lower and (iii) the sperimagnetic arrangement of
the Tb-moment in the amorphous case gives rise to a distribution of the Tb-moments which
lower the projected magnetisation and thus the magnetostriction.ln order to verify the latter
argument, Betz (1997) has compared the mean Tb-magnetic moment in a-TbI-xCox and
c-Tb I _ x Co x alloys and determined the variation of the low-temperature Tb-sperimagnetic
cone angle 0. The results show that 0 decreases from 75 degrees to 40 degrees when x
increases from 0.5 to 0.75. This result is comparable with that published in the literature
(Cochrane et al. 1978; Danh et al. 1998).
By assuming that the local environment in the amorphous state is similar to the
crystalline one, a further approach to lower the remaining anisotropy is by eliminating
the fourth-order anisotropy by substitution of Dy for Tb (Williams et al. 1994; Wada et al.
1996, 1997a, 1997b, 1997c, 1997d; Miyazaki et al. 1997). The well-known composition of
the bulk Terfenol-D alloy is TbO.3DYO.7Fe2. For a-(Tb,DY)0.42FeO.58 thin films, Miyazaki
et al. (1997) found that compensation of the magnetic anisotropy also occurs at the
Tb:Dy ratio 3:7. Room temperature magnetostriction curves for a-(TbI-xDYx)0.42FeO.58
thin films are presented in fig. 16. Note that with increasing x the value of A decreases
and tends to saturate with smaller magnetic field. In addition, the magnetostriction data
MAGNETOELASTlCITY IN NANOSCALE HETEROGENEOUS MAGNETIC MATERIALS 123
400 x=O.O
~-= 300
-
..-.I
-e
200
0.5
100 0.89
1.0
0
0 0.2 0.4 0.6 0.8
J.1oH (T)
Fig. 16. Room-temperature magnetostriction for (Tbl-xDYx)0.42Feo.58 films. After Miyazaki et aI. (1997).
measured at J-LoH = 0.008, 0.05 and 0.07 T are plotted as a function of x in fig. 17a. At
J-LoH = 0.05 T and J-LoH = 0.7 T, A does not decrease monotonically with x, but exhibits a
broad peak around x = 0.7. This concentration dependence of A is rather similar to that of
bulk polycrystalline (TbI-xDYx)Fe2 compounds (see fig. 17b). It indicates the near-zero
magnetic anisotropy in a film of the Terfenol-D composition. The atomic short-range order
of sputtered amorphous films, thus, can be considered as quite similar to that of crystalline
bulk samples, and the same origin of the magnetic anisotropy as well as magnetostriction
can be expected for both film and bulk alloys. We will come back to this aspect in the
discussion for the a-(Tb,Dy)(Fe,Co) films below.
As mentioned above, one of the ways to obtain a larger magnetostriction at room
temperature, is to enhance the lanthanide magnetisation by increasing the ordering
temperature and by diminishing the sperimagnetic cone angle. Due et al. (1996) have
successfully substituted Co for Fe in a-R-(Fe,Co) alloys. The T-T interactions tend to
be stronger in (Fe.Co)- than in either Fe- or Co-based alloys (Gavigan et al. 1988).
This results in an increase of T c for a given R:T ratio. In general, however, R-Fe
exchange interactions are larger than the equivalent R-Co interaction energies (Liu et al.
1994; Due 1997). This arises from the fact that the Fe moment is significantly larger
than the Co one, while the R-T intersublattice exchange constant is approximately the
=
same for T Fe and Co. Moreover, at the optimum concentration, the stronger R-FeCo
exchange energies should then lead to a closing of the sperimagnetic cone angle and thus
400
a-(Tb 1-.Dy.)O.41Feo .S8
300
(a)
~ -
-
~
-e
200
100
0
0 0.2 0.4 0.6 0.8 1.0
X
2000
(Tb 1•• Dy.)O.41 Feo .S8
(bulk)
~--
=
(b)
-
~
1000
500
0.1 T
0
0 0.2 0.4 0.6 0.8 1.0
X
Fig. 17. Magnetostriction as a function of Dy content for a-(TbI-xDYx)O.42Feo.58 films (a) and bulk
(TbI_xDyx )0.42FeO.58 alloys (b). After Miyazaki et al. (1997) and refs therein.
to an enhancement of the magnetostriction. Due et a1. (2oooa, 2000c) have studied the
(TbO.27DYo.73)(Fel-xCoxh system, in which the Tb:Dy ratio of I : 2.7 was fixed as the
same as that of Terfenol-D. At low temperature, all these as-deposited compounds of the
composition (Tbo.27Dyo.73)(Fel-xCoxh are magnetically rather hard. The coercive field
starts, at x = 0, with the highest value of 3.4 T, and then decreases rapidly with increasing
Co concentration down to about 0.5 T for 0.67 ~ x ~ 1.0. At 4.2 K, the saturation
magnetisation, M». exhibits a maximum at x = 0.47 (see fig. 18). This compositional
variation of M s is in contrast to the behaviour observed for the corresponding crystalline
alloys where M s always shows a minimum in the middle of the composition range due to
the enhancement of the (opposite) 3d(Fe,Co) magnetic moment. In the amorphous case,
however, an increase in M 3d will close the sperimagnetic cone of the rare-earth moments.
The maximum observed at x = 0.47 reflects that, at low temperatures, the enhancement of
M3d is smaller than the associated increase in (MTb.Dy)' At room temperature, the films
1000
800 ....- - - -
-1 400 ..
..·..·r······......•...........•............•..-...-.-300- K .
200
oL......<~--l.~--'--'--'-...J-..L-..L-J.--JL-.l--l.--'--'--'--'-...&.....J
o 0.2 0.4 0.6 0.8

x
Fig. 18. Variation of spontaneous magnensation as a function of x at 4.2 K and 300 K for
ThO.27DYO.73(CoxFel-x h thin films.After Duc et al. (2000a, 2000c).
30 500
25
400
.-. 20
ell
300
-
~ ~
6 15 __-:::IIV .-.
o
-::...... ~ ~: ....~: ~ ....~ ~: ..· ~.'· o .. 200 J
10 A" •••••••.•:&., .,.9.. •... .2 •
5 {:~·:~·:H:: : : : :·e'· ·I'1· · \ -,). ... 100
0- •..••.•... 0- .
o o
0.0 0.2 0,4 0.6 0.8 1.0
x
Fig. 19. Magnetostriction measured at 0.06 T for ThO.27DYO.73(CoxFel-x h thin films: (I & I') as-deposited;
(2 & 2') annealed at 150°C; (3 & 3') annealed at 250°C. Solid lines represent by •20. y · 2 ). dashed lines: bll ()'II)'
The measuringdirectionalong the sample length is indicated. After Duc et al. (2QOOa, 2000c).
become magnetically rather soft. The strongest coercive field (of 15 mT only) is found
at x = 0.63. The room-temperature spontaneous magnetisation M s. however, is almost
independent of the Co-concentration (see fig. 18).
Different field-annealing effects on the magnetostriction are evident across the whole
composition range, as summarised in fig. 19. For the Co-rich alloys, b U increases
5.0 2.0
4.8 1.8
--.
....
-•
.:::,fI:l A.6 1.6 ...":~
--.
1\
';i'
V
4.4 1.4
.J=
-....
~
'-"
4.2 1.2
a·(Tb0.21Dy0.13)(Fe1-"Co)
II 2
4.0 1.0
0 0.2 0.4 0.6 0.8 1.0
X
Fig. 20. Variation of (MR) and M3d(Fe,Co) calculated from magnetostriction data as a function of x for
ThO.27DYo.73(CoxFel-x)z thin films. After Due et aI. (2000a. 2000c).
significantly after annealing (dashed lines), whereas b y ,2 remains virtually unchanged.

For the Fe-rich alloys, we see the opposite effect in that b y ,2 increases significantly after
annealing while bll remains virtually unchanged. The increase in b y · 2 may be associated to
the decrease of the saturation field after annealing. In fact, the largest magnetostriction of
Ay ,2 = 480 X 10-6 and All = 250 x 10-6 is found in the middle of the composition range
(at x = 0.47) and it can be obtained in the rather low applied magnetic field of 0.06 T. Note
that, due to the substitution of Co for Fe, the ordering temperature in c-Tb(Fe l-xCOx h is
increased. but without enhancement of the magnetostriction (Dwight and Kimball 1974;
Belov et aI. 1975). At present, the magnetostriction increase is considered to be caused
by the closing of the sperimagnetic cone angle due to the enhancement in M 3d in the
substituted a-R(Fe,Coh alloys. A detailed analysis was performed by Due et al. (2000a),
yielding values between 48° and 53° for the R-sperimagnetic cone-angle 0, in accordance
with some literature values (Coey et aI. 1981; Hansen 1991; Danh et al. 1998). The
variation in e also implies a variation in the average (Tb.Dy) moment as a function of
x (see fig. 20). From the measured magnetisation data (fig. 18), M3d can be determined
as a function of x (see also fig. 20). Clearly, a similar composition dependence of M 3d
as observed in the crystalline R-(Fe,Co) alloys is found and a maximum is reached for
x = 0.47 where there is sufficient Co to ensure good ferromagnetic T-T coupling as well as
sufficient Fe giving the larger magnetic moment. This 3d magnetic moment enhancement
caused by Co substitution was confirmed by Mossbauer studies (Danh et aI. 2000; Due et
aI. 2000b): for a-Tb(Feo.55C00.45)1.5, a hyperfine-field value Bhf = 24.5 T was reported,
whereas it equals only 21 T for a-Tbfe-.
It is well known that the substitution of Dy for Tb gives rise to an increase of the
magnetostriction at low magnetic fields, through the reduction of the saturation field. It
is, however, also accompanied by a reduction of the saturation magnetostriction. The Co
substitution in the R-(Fe,Co) alloys, in combination with the effects of field annealing,
60
3 :
50
40
: ...
/;:::- 2 800
600
-.. --~:--- 1 'f--
I• ;•
~ 30 /I
~20 ..,.. f /
, ~
~
400
--
8
-e
,.Q
10
.,
; ~
200 J
o 3 2
.l.. o
-10
0.0 0.5 1.0 1.5 2.0
JloH (T)
Fig. 21. Room temperature magnetostrietion for Tb(Feo.4SC00.5Sh.l: as-deposited (l), annealed at 150°C (2)
and 250°C (3). After Due et aI. (1996).
results in an enhancement of both the low-field and the saturation magnetostriction. Thus,
it shows a possibility to enhance the magnetostriction in this type of alloys by increasing
the Tb concentration. Indeed, Duc et al. (1996) found a record giant magnetostriction
of AY,2 = 1020 x 10-6 at l-toH = 1.8 T, with All = 585 x 10-6 at l-toH = 0.1 T, in
a-Tb(Fe0.45CoO.55 h.l. The field dependence of the magnetostriction for these alloys is
presented in fig. 21. Here we see that a magnetostriction of Ay,2 (= All - A.d = 800 x 10-6
at 1.8 T is already observed for the as-deposited film. The comparison between bl! (AU)
and b1.(A.d indicates clearly the anisotropy of the sample. If the zero-field state is fully
isotropic, then bU = -2b1. and if it is isotropic in the plane, then bU = -b1.. For the
results presented in fig. 21, b1. = - ibll' indicating a certain initial anisotropy. After
field annealing, bll increases, and bs. is significantly reduced (in absolute magnitude)
in agreement with the fact that the easy axis becomes better defined. In addition, it is
important to note that b y ,2 actually increases after annealing at 250°C, leading to the
very large magnetoelastic coefficient of -60 MPa (i.e. AY.2 = 1020 x 10-6) at saturation.
This result is particularly interesting as the magnetostriction was almost completely
developed at only 0.3 T. In comparison, the magnetostriction of TbO.32(Feo.45C00.55)O.68
and TbO.32COO.68, prepared in the same condition, is presented in fig. 22. Clearly, the Fe
for Co substitution increases the magnetostriction by a factor of 2.
The temperature dependence of the magnetostriction is shown in fig. 23 for a
TbO.36(FeO.5C00.5)O.64 film. The magnetostriction decreases linearly with increasing
temperature up to the ordering temperature of about 423 K. Figure 24 illustrates five
normalised magnetostriction loops of an amorphous Tb40Fe60 film. This film shows a T C
of about 100°C (373 K). The measurement reveals not only the variation of the saturation
magnetoelastic coupling constant and the Curie temperature of the investigated film, but
also gives information on the change of the hysteresis curve with temperature.
40
Tb:M = 1:2 600
30 500
....... 400 ~
.......
If 20
300 ;,
:E
'-'
.Q 200 '-'
..
10
0.61 100
0 0
-100
-10
0 0.5 I 1.S 2
~O H (T)
Fig. 22. Room temperature magnetostriction for as-deposited Tb(Feo.45COO.5512.I and TbC02.1. After Betz
(1997).
30
-:.... Tb (Fe
I
Co)
480
0.36 0.5 0.5 0.64
25
..~ . ~o H =1.9 T - 400
. . 20 - 320 ~
~
:E ......... ...
....
N
~
-
I
IS
10
-,•....... 240 .......
160
"Cl
"Cl
!
5
o
f-
'........ 80
o 50 150
Fig. 23. Magnetostriction of Tb(Feo.5CoO.512. I as a function of temperature. After Betz (1997).
Figure 25 presents low-field magnetostriction data for a-(TbI-xDYx)(Feo.45CoO.55h.l

thin films with different TblDy ratios, after annealing at 250°C. It exhibits obviously a
decrease in the magnetostriction and saturation field with increasing Dy content, but with
a maximum in the initial magnetostrictive susceptibility for x = 0.73 as observed in other
Terfenol-D based alloys. Here, we see a partial anisotropy compensation for x = 0.73 as
found for crystalline (TbO.27Dyo.73)Fe2. As shown in fig. 26, the anisotropy constant K
deduced from the magnetisation measurements has also a minimum for this composition.
1.O1-_~
Q.8
CUSr-_~~ ...
SJ= 0.4
Q.8
Fig. 24. Normalised magnetostriction as a function of the applied field, at different temperatures, for a Tb(},4Feo.6
thin film (d = 3 ILm). After LUdwig and Quandt (2000».
,..--.,..---r----r--.,.--.,..--...., 800
40 600
0.5
-
&1-
0.73
20
200
10 1.0
o -.&.._---''--_...I-_.....J,_ _-L-_--' 0
o 0.1 0.2 0.3
~ H (T)
o
Fig. 25. Room temperature parallel magnetostriction for (Tbl-x Dy, )(Feo.45COO.55 h.1 measured along the hard
axis after annealing at 250°C. After Due et al. (1996).
This indicates that even in amorphous samples. in which the uniaxial K2 terms are expected
to dominate due to the local distortions from cubic symmetry, there is stilI a significant
contribution from the K4 cubic anisotropy terms. It is interesting to contrast this with the
numerical simulations for a-TbFe2 which have shown that the fourth-order anisotropy
energy per atom was an order of magnitude smaller than the second-order anisotropy
energy per atom, albeit that the fourth-order term was of the same order of magnitude
16
14
...,......
-
...:.:...e
'-'
~
12
10
8
-.c ""'
.c":::
6
4
2
0
0 0.2 0.4 0.6 0.8 1
x
Fig. 26. Variation of the ratio bll/ b.1 and the anisotropy constant K as a function of x for
(TbI-xDYx)(Feo.4sCo0.5S)2. After Due et al. (\996).
as in the crystalline TbFe2 Laves phase (Kaneyoshi 1984). The present result implies that
K4 tends to be larger than expected and that the local environment is reminiscent of that in
the cubic Laves phase. In the same figure, the ratio Ibll/bl.l shows a minimum at the same
composition, implying that at this concentration the anisotropy is then less well defined by
field annealing.
The field dependence of the magnetostriction is usually associated with different types of
magnetisation processes. For a system of randomly oriented spins and random distribution
of domain walls, the magnetisation process takes place in two steps (Chikazumi 1964):
first, the motion of 1800 domain walls leads to a magnetisation of Mo without any
contribution to the magnetostriction. In the second step, the spins rotate into the
direction of the applied magnetic field, leading to the change of both magnetisation and
magnetostriction. For amorphous alloys of random three-dimensional spin orientation and
of a random distribution of domain walls, Mo is expected to equal M max/2. In this case,
the relation between magnetostriction and magnetisation is given as (Schatz et at. 1994):
A(H)/A max = [2M(H)/M max - 1]3/2. (23)
For the rotation of the magnetisation out of the easy axis into the field direction, the
magnetostriction is related to the magnetisation as (Chikazumi 1964):
A(H)/A max = [M(H)/Mmaxf. (24)
The normalised magnetostriction as a function of normalised magnetisation for films

with perpendicular and parallel anisotropy is plotted in fig. 27(a, b) for
(TbO.27DYO.73)O.42FeO.58 (Schatz et at. 1994). The films with in-plane anisotropy appear
to show high magnetostriction and magnetisation at low fields (the coercivity is less than
0.01 T), due to the easy rotation of the spins in the isotropic plane. The motion of 180 0
1 I I I I , 1
Perpendicular ,•
, -
0.8 anisotropy ., 0.8
f-
,
-
8 0.6
(a) ,, - 0.6
,< = ,,
<,
-< 0.4 -
" Theory - 0.4
, , .. '
0.2 f- ,, - 0.2
a
a
.-r-·
0.2 0.4
","
I
0.6
I
0.8
I
1
a
M/Mmax
1 1
,,--
I I I I
•
0.8 f- In-plane anisotropy 0.8
(b)
•
-<8=
0.6 f- 0.6
,"
- ,,. -
<,
-< 0.4 0.4
Theory,.
0.2 - ,, - 0.2
:~
a I I I
a
a 0.2 0.4 0.6 0.8 1
M/Mm a x
Fig. 27. Normalised magnetostriction as a function of normalised magnetisation for (ThO.27DYO.73)O.42Fe0.58
films with perpendicular (a) and parallel (b) anisotropies. Dashed curves are calculated with eqs (24) and (23).
respectively. After Schatz et aI. (1994).
domain walls does not contribute to the magnetostriction, and eq. (23) can be applied. For
the films with perpendicular anisotropy, the magnetisation is governed by rotations out of
the EMD into the plane, requiring larger external fields. Here, eq. (24) holds. An anal-
ogous presentation is made for Tbo.4(Feo.ssCoo.4S)O.6 (Terfecohan; Due et aI. 2000b). In
this case, the sample with perpendicular anisotropy shows again a similar variation as de-
scribed in eq. (24). For the sample with parallel anisotropy, however, the onset of 'AJ'A max
occurs at a M value which is even higher than M max/2(see fig. 28). It is possible that
the spins are pulled into the plane by the shape anisotropy and only the random in-plane
(two-dimensional) oriented spin structure is formed. This would lead to a magnetisation
remanence, which is appreciably higher than in the case of the random three-dimensional
spin orientation.
132 N.H. DUe and P.E. BROMMER
1.0
0.8
-e 0.4
0.2
0.0
0.0 0.5 1.0
Fig. 28. Experimental and theoretical relations between normalised magnetostriction and magnetisation for
amorphous Terfecohan [Tb(Fe0.55eOO.45) 1.51 films. (1) and (2): theoretical curves described by eqs (23) and
(24), respectively. (_) as-deposited, (e) T A = 250oe, (A) 350 0 e and (0) 450 oe. After Due et al. (2000b).
Finally, in view of possible applications, the interesting values of the magnetoelasticity

and its magnetostrictive susceptibility (Xb = db/d(lLoH) (and/or XJ.. = dA/d(lLoH» are
summarised in table 2. Although the results are not so good as for the multilayers to be
discussed in the next section, the best results obtained for the single-layer films are good
enough for rnicroactuator applications. We mention here, for example, for Th(Fe,Co)1.5
films, the suitable values Ay · 2 = 1020 x 10-6, 1L0H e = 6 mT and XJ..II = 1.8 x 10- 2 T- 1•
As will be presented later in this chapter (section 10), many magnetostrictive devices have
been designed and manufactured, using rare earth based amorphous thin films like those
discussed here.
4.3. Magnetostriction ofnanocrystalline rare earth based thin films

A great disadvantage of the amorphous R-Fe thin films, from the point of view of
application in MEMS, is the comparatively low Curie temperature (T c ~ 400 K for
amorphous Terfenol-D films). Polycrystalline Terfenol-D films exhibit a room temperature
magnetostriction of As ~ 1500 X 10-6 and T c = 650 K. These films, however, are not
suitable for micro-mechanical applications due to their comparatively high coercive fields.
Material designs require always a synthesis between the advantage of the crystalline
films (giant magnetostriction and high T c) and good magnetic softness of the amorphous
films (low coercivity). In this context, the nanocrystalline structure is expected to be
a reasonable compromise. Most of the work on nanocrystalline ThDyFe alloys was
started with rapidly quenched ribbons (Kikuchi et al. 1993; Tanaka et al. 1995; Lim
et al. 1994; Ooike et al. 1993). Addition of 5 to 8 at% B yields a fine grain structure
with average diameter d ~ 10 nm. The best results {coercive field 1L0He 20 mT, =
magnetostriction A ~ 400 X 10-6, in an applied field lLoH =
1.0 T} have been obtained
for (ThO.3DYO.7 )0.3 Feo.62 BO.08 ribbons (Tanaka et al. 1995). Using different preparation
conditions, a nanocrystalline structure with d =
10 to 20 nm can be achieved directly
TABLE 2
Comparison of the magnetoelastie data for magnetostrietive bulk and thin-film materiaIs
y•2 A,y.2 ilbli/ilB Refs

MateriaIs b
(MPa) (10- 6) (Mpaff)
Bulk crystalline
Terfenol-D 11>o.27DYO.73Fe2 -101 2400 568 [IJ
Single layer films
a-Th Fe2 -19.4 321 20 [2J
a-11>0.27Dyo.73Fe2 -17.2 300 50 [3]
n-Tho.27Dyo.73Fe2 -49.0 800 [4J
a- ThC o2 -24.5 400 155 [5J
a-ThO.27 Dyo.73CO2 -15.1 260 190 [3J
a-Th(Feo.45 Coo.55 h -63.5 1040 300 [6,7J
a-Th(Feo.55 Coo.45) 1.5 -65.9 1080 1100 [8]
a-Tho.27DYO.73 (Feo.45Coo.55h -20.15 330 430 [6,7J
a-SmFel.6 25.9 -380 [9J
a-( SmFe2>w.26 BO.74 45.6 -670 [I 0]
a-SmCo2 11.0 -161 40 [7J
a-Sm(Feo.5S Coo.42) 1.54 27.4 -320 76 [IIJ
Multi/ayers
Tho.4 Feo.6/Fe -20 300 [I2J
Tho.27DYO.73Fe2 /Fe -12 650 [13]
Tho.27Dyo.73Fe2/Finemel 300 [l3J
Th(Feo.55 Coo.45) 1.5/ Fe -39 3040 [14J
Tho.4 Feo.6/Feo.5Coo.5 -28 410 1000 [12]
Tho.37 Feo.63/ Feo.65Coo.35 -31.1 600 4000 [12J
Tho..27Feo.73/ Feo.75Coo.25 -27 348 4800 [12J
Tho.. I sFeo.S2/Feo. 75COO. 25 -44.5 890 [I2J
1b(Feo.55C oo.45)1.5/ Feo.85Coo.15 -32 530 7850 [IS]
Sandwich system
Ndo.25Coo. 75/Tho.28 Coo. 72/Ndo.25 Coo.75 -15.2 248 560 [8]
Tho.28Coo.n/Ndo.25Coo.75/Tho.28Coo.n -16.5 270 117 £7,8,I6J
[IJ Clark (1980), [2J Hayashi et aI. (1993), [3J Due et aI. (2000a), [4] Riedi et aI. (1998), [5J Betz et aI.
(1999), [6J Due et aI. (1996), [7J Betz (1997), [8J Due et aI. (2000b), [9J Honda et aI. (1994), [IOJ Kim (1993),
[I I] S. David, unpublished data, [12] Quandt and Ludwig (1997), [I3] Farber and KronmUller (2000b), [l4J Due
et aI. (2oola), [15] Due et aI. (2oo1b), [I6J Givord et aI. (1996).
by melt spinning of DYO.3FeO.56BO.14 ribbons, without further annealing treatment (Lim

et aI. 1994). The influence of several additive elements on the magnetic and crystallisation
behaviour of these materials was investigated with Mo (Kikuchi et a1. 1993) and Mn (Ooike
et a1. 1993).
Schatz et a1. (1993, 1994), Williams et aI. (1994), Miyazaki et al. (1997) and Wada et
a1. (1997c, 1997d) reported investigations on the magnetic and magnetostrictive properties
of amorphous and crystalline Tb-Dy-Fe thin films. Effects of the substrate temperature,
of the annealing treatment on the microstructure, on the magnetic domains and then
on the magnetic and magnetostrictive properties of the 'hot grown' Terfenol-D films
have been investigated by Wada et aI. (1997c, 1997d). The changes in the in-plane
1200
700
r s S.OxlO-# I PG s "m·1 2.5
b. ... M/I,_"_cc"'
0
• .l,,_',JIIfI 1000
,
9""
600
o • HelkOe
06<>: IttllUl-eryrbllJlud 2.0
..... : cry6llllJlud
u 500
u 800
~
r> S,ld,-4 tr.. _"'
E o :-M,"S11Oo',.." cc·,
-a
Q)
.IC
400
~o,,"-Uu
E
Q,
e,
600 ....
a
1.50
~
CD
.....II
It)
9"" ~/ .IC
...
111 2
~
:::: 300 .' :::: ...
111
1.0~
,
I 400 -e
I
.,.
I
200 I
I
I
[J I
I
I
200 0,5
I
100 [J I
I
.------------~-----_cr-----~
[J
0 0 0.0
400 450 500 550 600 650
Substrate temperature I K
Fig. 29. The changes of the in-plane magnetisation, coercivity and magnetostriction as a function of substrate
temperature Ts in TbO.27DYO.73Fe2 films. After Wada et al. (1997c).
magnetisation, coercivity and magnetostriction as a function of substrate temperature (T s)

are summarised in fig. 29. The sharp increases in the magnetisation and magnetostriction
at T s from 405 K to 410 K were associated with the formation of very fine nanocrystalline
grains (smaller than 5 nm). The small change of coercivity confirmed the non-drastic
structure change in this temperature range. At temperatures T s between 410 K and 600 K,
the magnetisation, coercivity and magnetostriction remain almost constant. In accordance
with microstructure studies, these results indicate a release of the internal stresses induced
during the depositions. At T s over 600 K, the development of grain sizes from 10-20 nm
to 40-100 nm was observed. This recrystallisation causes the second step of the sharp
increase of the magnetisation, coercivity and magnetostriction as illustrated in fig. 29. For
these films, it is worth to mention that surface oxidation with a thickness of 50 nm was
observed.
For films formed at T s below 405 (i.e. with grains below 5 nrn) the measured hysteresis
loops and the observations of the magnetic domains in applied magnetic fields seem to
0.8
)C
III
e O.6
-
~:::
~:: :'0.4
0.2
0.2 0.4 0.6 0.8 1.0

M"I M"max
Fig. 30. Normalised magnetostriction as a function of normalised magnetisation for the nanocrystalline (n) and
polycrystalline (p) (ThO.27DYO.73)Fe2 films. After Wada et al. (I997c).
indicate a preferential perpendicular magnetisation by spin rotations with low anisotropy

in these nanocrystalline films (denoted as n-films). The magnetisation of the polycrystalline
films formed at Ts between 610 K to 625 K (p-films), however. was suggested to be
governed by the motion of domain walls at low magnetic fields. The change in the
normalised in-plane magnetostriction AU/As as a function of the normalised magnetisation
of these films is plotted in fig. 30. At low magnetic fields. the n-film shows a much
higher magnetostrictive response to the magnetisation than the grown p-film. The parabolic
dependence of the in-plane magnetostriction on in-plane magnetisation, observed for the n-
film, is in good agreement with the arguments mentioned above. and with the experimental
results for the motion of 90° domain walls, i.e. the rotation of spins with perpendicular
anisotropy into the plane (see also eq. (24) and fig. 27a). For the p-film, almost no
magnetostriction takes place up to M/ M max = 0.2. This behaviour seems to be appropriate
for random distributions of spins. as described by Schatz et a1. (1994) (see also eq. (23».
Additional annealing of these 'hot grown' nanocrystalline Terfenol-D films at 630 K for
10 h increased the nanograins of below 5 nm to around 50 nm. An enhancement of the
magnetostriction (up to 1500 x 10-6). however. occurs only for annealing during 2 h.
Further annealing causes the magnetostriction to decrease due to the oxidation (Wada et
a1. 1997d). No appreciable increase in grain size was observed in a similar annealing for
a film with d = 10-20 nm. In addition, Riedi et a1. (1998) showed that annealing 'hot
grown' films is not advantageous because of the formation of iron-rich phases like RFe3
and R6Fe23 which exhibit even less magnetostriction and higher magnetic coercivity. These
authors. however. reported their results of annealing the 'cold grown' (Tho.3Dyo.7) I-x Fex
(with x ~ 0.3) films as in fig. 31. The best magnetic properties were obtained for the sample
800 2°
i' 03
0 600
'<,
=
t.
-e 400 t.
t. t. 0
200 t. I 0
4
0
0
0
0.4 t. amorphous -
E 0.3 o intermediate 40
J: 0
o crystalline
:::t 0.2
20
0.1 0 0
I 3
0.0 • •
3
20 0
600
0 0
SZ 4
~
....U 500
400 t. t. 0I
Ii t.
300
as-spat. 400 600
Fig. 31. The saturation values of the in-plane magnetostriction All, the in-plane coercivity ItOHq and the Curie
temperature Tc as a function of the annealing temperature T A for (TbO.3DYO.7)O.3Feo.7: (0) amorphous, (0)
intermediate and (t» crystalline states. (I. 2 and 3. 4 serve to distinguish different samples.) After Riedi et aI.
(1998).
annealed at T A = 600°C for 10 minutes with a grain size around 10 nm, a saturation
magnetostriction A = 860 x 10-6 but /-LO He = 120 mT.
The appearance of a perpendicular anisotropy in the mixed state of both amorphous and
crystalline structure was reported by Miyazaki et al. (1997) for (TbO.3DYO.7 )O.33FeO.67 films
fabricated above 673 K (4{)()°C) (see fig. 32). The thermal stability and the reproducibility
of those films were studied also. For films prepared with substrate temperatures above
673 K (400°C), the magnetostriction changes remarkably after 3 months. This is due to
ageing effects, related to the formation of the Laves phase (Tb,Dy)Fe2.
According to the random anisotropy model (Herzer 1990; Hofmann et al. 1992), a
further reduction of the crystal size will reduce the coercive field, if the exchange length
is larger than the average grain size. Hence, technologies which, on the one hand. can
enhance the nucleation of grains, but, on the other hand, may limit the grain growth, must
be applied to achieve a fine nanocrystalline structure. For this purpose Zr and Mo have been
chosen as additives. In the binary system Fe-Zr the most stable intermetallic compound is
Amorphous ~
in plane out of plane in plane
200
,-..
150
...
'i'
Q
'-'
O.7T
O.lT
-e 100 .OST
SO t r - - - - - - - - - ,
o '-=:=i:==::::C==~---.:t:...--.J
100 200 300 400 SOO 600
Substrate temperature (0C)
Fig. 3Z. Magnetostriction as a function of substrate temperature for (TbO.3DYO.7 )Fe2' The anisotropy type and
the structural morphology is indicated too. After Miyazaki et al. (1997).
- (Tbo.1l DY•.") •., ,Fe ..

- - «(Tb01lDYol,)."Fe )Zr•."
100
-0.8 -0.4 0.0 0.4 0.8

J.LoH'J:I [T]
Fig. 33. Room-temperature parallel magnetostncuon loops for (Tbo.27DYO.73)O.32Feo.68 and
[(TbO.27DYO.73)O.32Feo.681Zro.03 films after annealing at 973 K. After Winzek et al. (1999).
the cubic Laves phase ZrFez. So the solubility of Zr in Fe is negligible, and it can be
assumed that Zr is substituted for (Tb,Dy) in (Tb,DY)I-xFeZZrx alloys. In comparison
to (Tb,Dy)Fez, ZrFez exhibits a more negative enthalpy of formation, and therefore the
addition of Zr may enhance the nucleation of grains. Mo, however, has a much higher
melting point, and intermetallic compounds containing Fe show a much lower stability.
The existence of the Laves phase MoFez is still questionable. Moreover, the large Mo
atoms reduce the diffusion, and therefore the addition of Mo was thought to limit the grain
800 o
- / 0 - (Tb•.71DYo.;n)Q.lZFe•.61
700 - 6 - «Tho.nDyo.Z7).,lFeo.61)Zr. Ol 6 t:.
~ «Tho.."DYo.Z7).,!eo.61)Mo... o
600
500 •
-..
~,. . .,
0
...... 400
~
300
200
100
~6A..-..
o ~ ~-t:>.
(a)
0
t... [minI 10 60 360 10 60 360 10 60 360 10 10
Tit [K] 773 803 833 873 973
300 - 4 - (Th•.nOY•.27)•.11Fe•.61
- 6 - «Th•.nOy.1I).nFe•.61)Zr001
250 - 0 - «Th•.71DY027)•.lZFe•.61)MoDJ)<
crystallized 0
E=' 200
E
...... 0-0
150
::x::"
::t" 100
X-ray amorphous
SO -4~
!_6-t:.
(b)
0
t... [min] 10 60360 10 60 360 10 10
TA [K] 773 833 873 973
Fig. 34. Magnetostriction (Asl, measured in I T (a), and coercivity (IJ,OHc) (b) of (TbO.27 DYO.73 lO.32 FeO.68,
[(Tho.27DYO.73lo.32Feo.68IZro.03 and [(TbO.27DYO.73lo.32Feo.68IMoo.04 films, after different heat treatments at
temperatures TA and annealing times IA. After Winzek et al. (1999).
growth. Practically, the influence of the additives Zr and Mo on the crystallisation and on
the magnetic properties was studied by Winzek et al. (1999). Typical magnetostriction
loops are presented in fig. 33 for two films crystallised at 973 K for 10 minutes, one
without additive and the other with 3 at% Zr. It is clearly seen that the Zr-substituted
= =
film shows All 430 x 10-6 at /-LOH 1.0 T and /-LoHe = 120 mT, a strong improvement
with respect to the starting alloys: All = 230 x 10- 6 and /-LoHe = 300 mT. The saturation
magnetostriction and the corresponding coercivity of all annealed films, without and with
additives, are summarised in fig. 34(a, b). These additives were considered as causing an
enhancement of the growth of RFe2 grains and to hinder the formation of RFe3 ones. It is
assumed that the latter was responsible for the high coercivity values above 150 mT. Farber
and Kronmiiller (2000a) reported also a reduction of the coercivity by 30% by the addition
of 2 at% of Zr. In general. it should be noted that a reduction of the average grain size of
the cubic Laves phases below 10 nm (and consequently coercivity values below 100 mT)
could not be achieved in single-layer films. The grain growth, however. can be controlled
in nanometer-scaled multilayers with interlayers of Nb. This will be presented in the next
section.
S. Magnetostrictive multilayers
5.1. Nanocrystalline TbDyFe + Zr/Nb multi/ayers

Nanocrystalline structures combine the advantages of a crystalline film and the soft
magnetic properties of an amorphous structure. These properties. however. can be achieved
when the grain sizes (d) are smaller than the Bloch wall width of the crystalline material.
For R-Fe alloys. the critical grain size has been estimated to be de ,...., 10-15 nm and
a grain diameter below 5 nm is desirable to reduce coercivity significantly. The results
of magnetostrictive single-layer films presented in the preceding section show that grain
growth can be affected by several factors. but that it is rather difficult to reduce the average
grain size below 5 nm. Fischer et al. (1999) and Winzek et al. (1999) have applied a method
to inhibit grain growth by constructing multilayers in a special way. They fabricated a
multilayer system containing TbDyFe + Zr layers with thickness of 5 nm, separated by
Nb-layers with an average thickness of 0.25 nm. Their microstructure investigations have
shown that this multilayer structure shifts the crystallisation temperature (for 10 minute
annealing) from between 773 and 873 K (for single layers) up to about 923 K. At this
annealing temperature, nanocrystallites of less than 5-10 nm were formed. After such
a heat treatment, the corresponding single-layer film exhibits a polycrystalline structure
with average grain sizes much larger than 20 nm (see section 4.3). This remarkable
influence of the Nb spacer layers is thought to be due to reduced dimensions and an
increase of interfacial surface area. Magnetic and magnetostriction data of the as-deposited
and annealed TbDyFe + ZrlNb multilayers are summarised in fig. 35. After 10 min
annealing at temperatures from 873 K to 973 K, the transition temperature increased
from T c = 333 K to 592 K, accompanied by an increase of the parallel magnetostriction
from 265 x 10-6 to 520 x 10-6 • while the coercive fields (increasing from #LoBe = 5 to
75 mT) stay distinctively below 100 mT. The variation of the magnetostriction, the ordering
temperatures and the coercive fields are strongly correlated to the formation of the highly
magnetostrictive RFe2 Laves phases. As mentioned above, the Nb spacer layers do inhibit
the grain growth. and also increase the crystallisation temperature. Because of its strong
affinity to iron. the additive Zr enhances local formation of the highly stable ZrFe2 Laves
phases, which then act as nuclei for the similar, but less stable. RFe2 Laves phase. The
difference of 34 K in the transition temperatures of single-layer TbDyFe + Zr (T c = 626 K,
see also section 4.3) and multilayer films may result from differing average grain sizes
and/or chemical composition. In the as-deposited multilayer the chemical composition is
periodically varying spatially. In the annealed multilayer, however, due to the interdiffusion
600 , - - - - - - - - - - - - - - : - . . 100
multilayer
... - ..... .. .: - ,.
,.,' .-~.
[500 - -.~. 75
.:: a'
~-
E- f /
F
oc
- Tc [K]-..... / ... ~_c· :::::
~400
as ... , 50 3'
..<
~300
.. ,4' .:j
.....
25
\-.u
---"- ----' _. -A
._._.-._-- -'
200 u - ""__OJ
o
~
873 898 923 948 973

T.~[KI
Fig. 35. The in-plane magnetostriction All_ coercivity J.l.oHc and Curie temperature TC as a function of the
annealing temperature T A for ThDyFe + ZrlNb multilayers. Open square symbols indicate the phase transition
temperature of an amorphous rest phase. After Fischer et al. (1999).
of atoms between layers, modification of the layers must be taken into account. Due et aI.
(2000d) have observed that an annealing at 350°C for 1 hour can extend the interfacial
spacing with I nm. Farber and Kronmtiller (2000b) observed that the multilayer structure
was destroyed at T A = 800 K (see also section 5.3 and fig. 56).
5.2. Magnetostrictive spring magnet type multi/ayers (MSMM)

Originally, the research on giant magnetostriction was based on homogeneous R-T-
alloys. As described in section 4, attempts to reduce the driving fields required for
giant magnetostriction are concentrated around techniques for reducing the macroscopic
anisotropy, e.g., to control the Tb:Dy ratio in order to achieve compensation of fourth-
order anisotropy, to use amorphous or nanocrystalline materials to reduce anisotropy, etc.
Furthermore, the saturation field H s actually is determined by the anisotropy field K 12M s-
and thus can be reduced by increasing the saturation magnetisation M s, instead of by
decreasing the anisotropy constant K. For a given Rvconcentration, which is optimised with
respect to giant magnetostriction, e.g. at the 1:2 R:T ratio, an increase of the 'I'-sublattice
magnetisation by substitution, for instance, will increase the total magnetisation in the R-
T alloys with R = light lanthanide, but will reduce the total magnetisation in the alloys
with a heavy lanthanide (due to the ferrimagnetic nature, when the R-moment exceeds the
T-moment). An increase in the R concentration, then, can increase M s- but also results in
a lowering of the ordering temperature with the opposite effect. Thus, it is difficult to see
how M s can be notably increased using homogeneous R- T alloys. Nevertheless, one has
found this possibility by combining two different magnetic materials using an approach
similar to those developed for the permanent "spring magnets". For the spring magnets,
one matches a material which has a high magnetisation with another one which possesses
a strong coercive field. These two materials are coupled magnetically. Here, multilayers are
fabricated by combining also two different materials, one having a large room-temperature
Fig. 36. Schematic view of a magnetostrictive "spring magnet" multilayer (MSMM).
magnetostriction (like, e.g., a-Tb-tfe.Co) alloys) and the other being magnetically soft
and having a high magnetisation (like, for example, (Fe.Co) alloys). The structure of this
spring-magnet type multilayer is illustrated in fig. 36. The thickness of these layers must be
enough for magnetic coupling but they must be thinner than the magnetic exchange length,
for which domain walls cannot be formed at the interfaces, i.e., the thickness should range
between I nm to 20 nm (Givord et al. 1993, 1996; Wtichner et al. 1995, see also section 7).
In this state, the 3d-3d exchange interactions ensure that parallel coupling of the transition-
metal magnetic moments persists throughout all multilayers. Without creation of domain
walls at the interfaces, the multilayer behaves as one piece of material. Then, magnetisation
processes result from the average of the magnetic characteristics of each individual layer.
Assuming that the 3d-3d exchange interactions are infinite and the interfacial magnetic
anisotropy is negligible, one can calculate the magnetisation, the magnetic anisotropy and
the magnetostriction of the multi layers from the corresponding values of the simple alloys
and the (average) thickness tTb and tT of the individual Tb-(Fe,Co) layers and the (Fe.Co)
layer, respectively (Betz 1997):
_ MTtT - MTbtTb
( M-
) , (25a)
tT tTb +
(K) = KTtT + KTbtTb, (25b)
tT + tTb
(b y •2htT + (b y ,2)Tb tTb

(b y ,2) = - - - - - - - (25c)
tT +1Tb
In the as-deposited composite multilayers, the Tb-based layers were amorphous, while
the transition metal layers were found to be nanocrystalline with a mean grain size being
equal to the layer thickness (Quandt and Ludwig 1997). In spite of the compressive
stress, these multilayers exhibit an in-plane EMD. The magnetisation of a TbFelFe and
TbFeIFeCo multilayer series is presented as a function of the transition metal layer-
thickness in fig. 37 (Quandt and Ludwig 1997; Quandtet al. 1997a, 1997b). Comparison of
the experimental data with theoretical calculations based on either parallel or antiparallel
coupling between the Tb-Fe and the T layers strongly supports the antiparallel coupling,
i.e. the (Fe.Co)- and Fe-magnetic moments are coupled ferromagnetically throughout
the entire multilayer and are coupled antiferromagnetically to the magnetisation of the
1.5 .-----...--,...--.--y---.--,...-....,......--.",_--.~_.....,
1.0
....,..,.
•/ • lbFe(4.5 nm)/Fe(x nm) expo
0.5 ••••• -lbFe/Fe parallel coupling
•••• • - lbl'e/Fe ontiparallel coupling
....
...... • lbFe(7 nm)/FeCo(x nm) expo
-1bFe/FeCo parallel coupling
- - lbl'e/FeCo antiparallel coupling
0.0 '--........L-.--'-_"""'-_"'----'_--'-_........_ " ' - -........._ ..............
o 2 4 6 8 10
X (om)
Fig. 37. Saturation magnetisation of the TbFelFe and TbFelFeCo multilayers as a function of the transition-metal
sublayer-thickness, in comparison to a simple model for exchange coupled layers considering either parallel or
anti parallel coupling of the TbFe and the transition metal layers. After Quandt and Ludwig (1997).
ferrimagnetic TbFe layers due to the dominating Tb moments in these layers. This
behaviour is confirmed for TbFelFeCoBSi multilayers (Quandt and Ludwig 1999).
The in-plane magnetisation loop of the as-deposited Tb(Feo.ssCo0.4s)1.5(7.5 nm)!
Fe(5 nm) multilayer is plotted in fig. 38a together with the corresponding loop of a
giant-magnetostrictive Terfecohan Tb(Feo.SSCoO.4S) 1.5 single-layer film (Due et al. 2000d.
200la). It reveals the reduced (but non-negligible) hysteresis and saturation field for
the multilayer. This behaviour is confirmed in the magnetostriction loops (fig. 38b).
Figures 39a and 39b show the magnetostrictive hysteresis loops of a TbFeIFe and a
TbFelFeCo multilayer. respectively. For both multilayer systems. high saturated values
were obtained for the magnetoelastic coefficient b y · 2 = (b ll -b1.): -28 MPa (TbFelFe) and
-41 MPa (TbFelFeCo) in a field as low as 20 mT (corresponding to the Ay ,2 = (All - A1.)
values 580 ppm and 850 ppm. respectively). These values. however. are still lower than
those of the best TbFeCo single-layer films and also the uniaxial easy axis does not seem
to be well established in these systems. The magnetostriction improvement in TbFeIFeCo
compared to TbFelFe multilayers is due to the (extra) magnetostrictive contribution of
the FeCo layers. which exhibit a saturation magnetostriction exceeding 100 x 10-6
(Quandt and Ludwig 1997; Betz 1997). In fig. 40a, the saturation magnetoelastic
coupling coefficient b; = (3/2)b y ,2 of an annealed (Tb4oFe6o)/(FesoCoso) multilayer is
compared with that of single films of Tb40Fe60 (with sputtering conditions optimised
for attaining the large saturated b s value of about 41 MPa. see Quandt 1997) and
of (Sm.Fe.B) (optimised for low-field performance. at the cost of the saturated value.
which for the (Sm.Fe.B) system can be doubled, for a Sm content of 36.8%. see
Lim et al. 1998). In fig. 40b a comparison is presented between the magnetoelastic
coupling coefficient bll of the same multilayer and values for some other multilayers:
1.0
0.5
~ 0.0
-0.5
(a)
-1.0
-0.8 -0.4 0.0 0.4 0.8
floR (T)
700
600
SOO
.-..
-
"=
~
-«
400
300
200
A,
100 (b)
0
-0.8 -0.4 0 0.4 0.8
l10B (1)
Fig. 38. In-plane magnetisation (a) and magnetostriction (b) of a Terfecohan Tb(Feo.55COO.45>t.5 single layer
and a TerfecohanJFe multilayer film. Definitions of the magnetostriction remanence (A.r) and the coercive field
(AHe> are illustrated for the Terfecohan film. After Due et a1. (200la).
Sm(TbI SFeS2)/(Fe75C025), (TbDyFe)/(FeSiCuNbB) and (Tb33Fe67)/(FesoB20). Ludwig

and Quandt (2000) reported the possibility to control the orientation of the magnetic easy
axis by magnetic annealing and, thus, to enhance the magnetostriction in the considered
direction (see figs 41(a, bj). A uniaxially anisotropic multilayer TbFelFe can also be
created by depositing under a magnetic field H def (Le Gall et al. 2(00). Typical field
dependence of the magnetoelastic coefficient bY' of an isotropic TbFelFe multilayer
deposited without a bias field (H dep = 0) is presented in fig. 42a. The symmetry of b"
and as. with almost the same saturated values (""-"2 MPa) demonstrates the quasi-isotropic
character of the magnetoelastic properties of the multilayer (see also eq. (13) in section 3).
When deposited under a bias field in the x-direction (H dx = H dep I- 0), the multilayer
presents the original magnetic (fig. 43) and magnetoelastic (fig. 42b) behaviour associated
with strong uniaxial anisotropy. After saturation along the easy axis, the moments remain
aligned along that axis, in a single domain, when the applied field H" is lowered down to
zero (MriMs = 1). In reverse fields, the magnetisation is switched in a short field range.
200
(8)
-
=-
IIIl
-
-
~
.Q
0
-
'T'
c
-e
\ -Tbo.JeG.6(4.5 om/Fe(6.5 om)
0
10 -200
\ -Tbo.J~.6
...
20
-0.05
~
0.00
-
0.05 0.10
-400
0.15
JJoH (T)
600
(b) 400
_
ClIl
=-
-10
II TbFe(7nm)/FeCo(8nm)
200
b --
-
~
.Q
0
l-
0
-
-e
10 -200
20 -400
-0.05 0.00 0.05 0.10 0.15
JJeH (T)
Fig. 39. Magnetostrictive hysteresis loops of a TbFelFe (a), compared with a TbFe single film, and of a
TbFelFeCo (b) multilayer. After Quandt and Ludwig (1997).
Apparently, 'in field' depositing reduces also slightly the coercivity (from 6 mT to 4 mT).
High-amplitude flexural and torsional-oscillation modes were observed for these films.
In the absence of a long-range anisotropy in amorphous TbFeCo layers, along with
negligible magneto-crystalline anisotropy in FeCo layers, the coercivity (between 4.5 mT
and 7 mT) of MSMM is usually determined by stress-induced anisotropy. Chopra et a1.
(2000) showed that the magnetoelastic constraints at the TbFeIFeCo interfaces (due to
different values of the magnetostriction in adjacent layers) lead to biaxial stresses. They
developed a model, which expresses the magnetic coercivity as follows
(26)
Here, E is Young's modulus of TbFeCo.

30
(7nn~/'''~
25 I
III
Q.
~
,Q-
10
5
(a)
0
• ~ .4) 20
mT
4D 8D 8D
IJaH.
45
:. -15
:IE
,Q= -10
o 20 40 60
IJoH- mT
Fig. 40. A comparison of the magnetoelastic coupling coefficient of an annealed (Th40Fe60)/(FesOCoso)

multilayer with the optimised Th40Fe60. SmFeB (a) and (ThISFeS2)/(Fe7SCOZS), (ThDyFe)/(FeSiCuNbB),
(Th33Fe67)/(FesoB20) (b) ones. After Ludwig and Quandt (2000).
This model succeeds in predicting the correct order of magnitude of the experimental
coercivity values in these MSMM.
In attempts to improve the soft-magnetic properties of the highly magnetostrictive
nanocrystalline layers (see above, and see section 5.l) by preparing MSMM's with
soft magnetic interlayers, Farber and Kronmuller (2000b) have studied ThDyFelFinemet
multilayers (Finemet is a nanocrystalline FeSiBNbCu soft magnetic alloy; see Herzer
1997). After production, the deposited ThDyFe as well as the Finemet are amorphous.
Subsequent annealing leads to relaxation of the amorphous phases and to crystallisation in
the (soft magnetic) Finemet layers. The properties of the multilayer can be described by
eqs (25a-25c), i.e. by the mixture rule of two perfectly coupled components. Applying
eq. (25c), the contribution of the individual layers to the magnetoelastic coupling
0.12....--.....---,----.--,.--.........--,----....------,
II
0.06 ..
0.00 ~-------~
.L
41 0.1 Q.2
ClO6 r-----.---..-----.---~-__.-:--_,._---.,....---...,
aea II
.L (b)
-4.1 0.1 Q.2
Fig. 41. Magnetostriction loops (parallel and perpendicular measurement direction) of an as-deposited (open
symbols) and a magnetic-field annealed TbO.4FeO.6(7 nm)lFeo.5COO.5(9 om) multilayer (closed symbols):
(a) annealing field aligned perpendicular to the long axis of the cantilever (parallel measurement direction),
(b) annealing field aligned parallel to the long axis of the cantilever. Magnetostriction in arbitrary units, field
in tesla. After Ludwig and Quandt (2000).
was deduced from their magnetoelastic data presented in fig. 44. Deviations from a
linear behaviour are ascribed to the compensation of the magnetic moments. For these
multilayers, the TbDyFe (amorphous Terfenol-D) contribution (b y ,2 = -15 to -18 MPa)
and the Finemet contribution (b y •2 = 15 MPa) have opposite signs. whereas the Fe
contribution (b y ,2 = 2 MPa) is small. with the same sign. For the bulk materials.
(a)
Htl
o
IV
a..
~ .1
.....
':a
-2
-3 y&
~x Ht,
(IbFC'JFe)x40
~=O'
as-sput.
-4
1 tJ;;-
• a..
X fL, 8"
.
-2 ~.'
...~:r
.'.Ii
'
•
•••
•"0•i .
iI
",
~
~
.
.
"
••
~.
. .- (IbFeJFe)x40 ~ ~
-3
.'
..• ""
'
.. 0 '
.
~
.:
:
*
Hd• p 0
as-sput
". "
,,~~
",
-4 L---''''''-.......I_--'-_--L_........ _-L- ---J
·100 -so o so 100
J.1oH (mT)
Fig. 42. Magnetoelastic coefficient versus magnetic field applied parallel and perpendicular to the long axis of
the cantilever (parallel measurement direction) of an as-sputtered TbFelFe multilayer deposited (a) without a de
field (Hdep = 0) and (b) with Hdep #- O.After Le Gall et aI. (2000).
Farber and Kronmuller (2ooob) quote the b y •2 values -22 MPa. 6 MPa and -6 MPa for
a-Terfenol-D, Fe and Finemet, respectively.
As regards the temperature dependence of the magnetoelastic-coupling coefficient.
multilayers show a great advantage with respect to single films. Measurements by Ludwig
and Quandt (2000) are presented in fig. 45 for a (Tb40Fe60)/(FesoCoso) multilayer. Note
that. upon increasing the temperature. the slope of the magnetoelastic loop as well as the
coercive force remain relatively constant. whereas the saturation field and the saturation
value of the magnetoelastic-coupling coefficient are reduced. At 225°C. the saturation
magnetostriction is still 20% of that at room temperature.
1.0 (TbFelFe)x40
Hdep :# 0
.
~: ~
.
0.5 as-spur,
f 0.0
IL,-+;':
Y fiJ.
~.~ ~~
-1.0P==::::::.._--'"··::..··-,.; L.::::+. a, I
-100 -50 o 50 100

J1JI (mT)
Fig. 43. Easy-axis and hard-axis hysteresis loops of an anisotropic. as-sputtered ThFelFe multilayer. deposited
under a dc field (Hdep # 0). After Le Gall et al. (2000).
.-.. 20 0
=:I
=..
:;
'-'
::::: 15
.Q
.-..
~
,!::
J
\; 10 ........
J .............
-
+
'-'
I
5
0
0.0 0.2 0.4 0.6 0.8 1.0
tsoj/tnrlc
Fig. 44. Plot of the weighted magnetostriction. -(I + tsof!ltstric)bll' of (D) Terfenol-DlFe and ('il) Ter-
fenol-DlFinemet multilayers, as a function of the thickness ratio. t",ftltstric. of the soft magnetic layers (Fe and
Finemet, respectively) and the magnetostrictive ones (Terfenol-D), After Farber and Kronmiiller (2oooa. 2ooob).
The large magnetostrictive susceptibility in Tb-FeCo/FeCo multilayers and its technical

character were reported and discussed in detail by Due et al. (2001a) in a study of
Terfecohan/Fe and Terfecohan/(Feo.sCoo.s) multilayers. Like in magnetic hysteresis loops,
there is a so-called magnetostriction remanence (Ar) and a coercive field J...Hc, where A = 0
in the magnetostrictive hysteresis loop (see definitions in fig. 38). Note that, experimentally,
J... He is observed to be equal to M He. Due to this magnetostriction remanence, the
possible change of the magnetostriction in (re)magnetising fields (i.e. in H > 0), 6A =

AS - Ar. is smaller than that in demagnetising (reverse) fields (i.e. in H < 0), where
25 50 75
Fig.45. Normalised magnetoelastic coupling coefficient of a Tb0.4Feo.6(7 nm)/Feo.5CoO.5(9 nm) multilayer. as

a function of external field at different temperatures. After Ludwig and Quandt (2000).
/),.).., = )..,S - )..,(>.. H c) = )..,s. The low-field dependence of the magnetostrictive susceptibility
is presented in figs 46(a, b) for the TerfecohanlFe and Terfecohan/(Feo.sCoo.s) multilayers,
respectively. As can be seen from these figures, the field direction dependence mentioned
above may not be so clear for the case of the as-deposited films (see curves I in
figs 46(a, bj), but certainly becomes rather important for the annealed films (see curves 2
in figs 46(a, bj), For the annealed TerfecohanlFe multilayer, X>"II shows a maximum
(of 1.3 x 10- 2 T-I) in low magnetising fields. A sharp and larger maximum (of
3.5 x 10- 2 T- 1) , however, is exhibited in demagnetising fields just above >..Hc. The
as-deposited Terfecohan/(Feo.sCOO.s) multilayer shows even a rather small and broad
magnetostrictive susceptibility maximum (X>"II.max = 0.7 x 10- 2 T- 1 only) in magnetising
fields. In demagnetising fields, X>"II.max reaches a value of 5.0 x 10- 2 T- 1, which strongly
exceeds that of 2.0 x 10-2 T- 1 required for the application in magnetostrictive devices
(Du Tremolet de Lacheisserie 1993). This magnetostrictive susceptibility maximum in
demagnetising fields could be considered as a good working point for the magnetostrictive
films in MEMS. For the samples under investigation, the working point is at JLoH dc ~
6 mT. By applying a bias magnetic field at this magnetic field, a magnetostriction change
/),.).., ~ 10- 4 can be obtained in an a.c. field of the magnitude of 2 mT.
Attempts to reduce JLoHc also imply the possibility to shift the working point to lower
fields. For this purpose, Quandt and Ludwig (1999) have prepared TbFeJFeCoBSi multi-
layers. It was shown that the FeCoBSi layers have improved the magnetic softness of the
multilayer. Due (2002) and co-workers have succeeded to prepare Terfecohan/(Yo.zfeo.s)
multilayers with JLoH c = 0.5 mT (see fig. 47b). Initially, this multilayer consists of amor-
phous TbFeCo layers and not-well crystallised (Y, Fe) layers. In this state, the multi-
layer exhibits already a soft magnetic and magnetostrictive character with a coercivity
JLoH c = 3 mT and a parallel magnetostrictivesusceptibility X>"II.max = 3.8 x 10-2 T- 1 (see
150 N.H. DUC and P.E.BROMMER
0.04
(8) 9 9
0.03
1.-
0.02
~
0.01
0
0
-0.1 -0.05 0 0.05 0.1
0.05
": '":
I I
(b) j ~
0.04
.'" "" 2
.' -,
"
" "
"
0.03 ':" :'"
1.- "
" "
" "
" ""
~ 0.02 ~ ::
q q;
~~4
o.<;fl',0 t
--
0.01
0.00
~
-:e% ~
Q:.
-0.1 -0.05 0 0.05 0.1

Il DU (I)
Fig, 46. Low-field dependence of the absolute value of the parallel magnetostrictive susceptibility for
TerfecohanlFe (a) and Terfecohan/(Feo.5COO.5) (b) multilayers: curves (I) as-deposited, curves (2) annealed
multilayers. After Due et al. (200la).
figs 47 and 48(a. bj), This magnetostrictive softness has been strongly improved by heat
treatments: ll-oHc = 0.3 mT and X}"II = 13 x to- 2 T- 1 in a field of 1.8 mT (fig. 48(a. bj).
These novel properties are associated with the development of a nanostructure in the (Y.
Fe) layers. As indicated by the XRD results (fig. 49), the as-deposited 'Ierfecohan/(Y, Fe)
multilayer shows no clear Bragg peaks. but only a rather broad contribution located around
20 = 45° (i.e. the (110) reflection of bee-Fe). Along with the results of the Mossbauer stud-
ies (see fig, 50). this could imply that the (Y, Fe) layers are amorphous, The (Ito) Bragg
reflection of the bee-Fe structure is enhanced for the samples annealed at T A = 250°C.
Finally, they are visible in the sample annealed at 350°C (fig. 49), This transformation
from the initially not-well crystallised phase into the bee-phase in the (Y. Fe) layers is con-
firmed by the characteristic value of the hyperfine field (Bhf = 33 T) observed from the
Mossbauer spectrum (see fig. SOc).
Aside from the hE effect which is an interesting feature for designing resonant
mechanical devices. MSMM show a GMR (hR) effect (Quandt and Ludwig 1999.2(00).
Thus, as already introduced in section 3.3. the bending of a magnetostrictive bimorph
MAGNETOELASTICITY IN NANOSCALE HETEROGENEOUS MAGNETIC MATERIALS lSI
Fig. 47. Magnetic hysteresis loops for Terfecohan/(YO.2FeO.g)multilayers: (a) as-deposited. (b) after annealing
at 350°C. After Due (2002).
can be monitored by measuring the magnetoresistance. A comparison of the normalised

magnetoresistance and the magnetostriction effect for an annealed (Tb4oFe60)/(FesoC050)
multilayer is shown in fig. 51. The figure exhibits that both loops are nearly identical. This
allows combining actuator and sensor functions at the same time.
5.3. Interface magnetostriction ofmultilayers

The magnetostriction of multilayers is found to change as the thickness t of the
magnetic layer is changed (Zuberek et al. 1987. 1988; Awano et al. 1988; Dime and
Denisson 1989; Nagi et al. 1988). These changes in the magnetoelastic properties have
been attributed to magnetostrictive strains. which are localised at the interface. Such
magnetostrictive effects are called "surface magnetostriction" (Szymczak et aI. 1988).
Similar effects are observed for the surface magnetic anisotropy (Gradmann 1993). Surface
and interface effects were already discussed in section 2.3. It is often claimed that the
changes in elastic and magnetoelastic properties of multilayers are due to the presence
200
ISO
,,~
-=
'-"
'"
.<
100
SO
(a)
0
-IS -10 -5 0 5 10 IS
IlJl (mT)
0.15
(b)
--
-'E-
:::::
..:
0.10 2
~
0.05
0.00
-15 -10 -5 o 5 10 15
J.LoH (ml)
Fig. 48. Low field dependence of the parallel magnetostriction (a) and the magnetostrictive susceptibility (b) for
Terfecohan/(Yo.zFeo.s) multilayers: (I) as-deposited, (2) annealed at 350°C. After Due (2002).
of interdiffusion layers. which are formed at the interfaces. Nowadays, however, one can
fabricate multilayers, which have negligible interface diffusion. Nevertheless, their surface
anisotropy and magnetostriction are considerable. Independent experimental evidence for
the intrinsic character of the surface magnetoelastic coupling has been given by Sun
and O'Handley (1991), who used the spin-polarisation of secondary electrons, detected
from the asymmetric spin-orbit scattering, to monitor selectively and directly the surface
magnetisation (see section 3.5). These measurements were performed using amorphous
ribbons and therefore interdiffusion processes had no effect.
Szymczak (1997, 1999) has stressed the possibility to distinguish between pure
interface effects, i.e. surface magnetostriction, and the effects of an interface diffusion
layer. Since magnetic anisotropy and magnetostriction have the same origin, the surface
magnetostriction is expected to have an intrinsic character. In Szymczak's notation (Voigt
~10)(Fe,CO)
--"-.a T A =350°C
-
:I
of T A =250 °C
•
'-'
As-dePCIsited
35 40 45 50 55
2 theta (degrees)
Fig. 49. X-ray diffraction patterns of a Terfecohan/(Feo.85Coo.15) multilayer. After Due (2002).
Velocity (mm/s)
o
"--1 :il;zsJ
+12
0 10 20 30 40
1.00
=
e
1.02 c.
.-
::1::2\1
';1 (b)
Gf)
"":::l.
e
.&I
S
~
~
1.00 0 10 20 30 40
1.02
20
15 (c)
10
5
0
0 10
Fig. 50. Mossbauer spectra (CEMS) and hyperfine-field distributions of a Terfecohan/(YO.2Feo.8) multilayer:
(a) the as-deposited film, (b) after annealing at 250°C and (c) 350°C. After Due (2002).
1.0
II
o.s -0- "IIII'*" " iCI!
-
.<
~1i'Y"'idiai
is u
45
l.
-1..0
-1GD -75 -25 0 2i 50 75 100
PaH.. mT
Fig. 5 I. Comparison between the normalised magnetostriction and the normalised magnetoresistance of a
ThOAFeo.6(8 nm)lFeO.5CoO.5(9 nm) multilayer annealed at 250°C. After Ludwig and Quandt (2000).
notation), it means that the magnetoelastic tensor [M] in artificially structured materials
should consist of two parts:
(27)
where [M]bulk describes the bulk magnetoelastic coupling and where [M]surf describes
surface magnetoelastic coupling and/or the contribution to [M] due to the interdiffusion
layers. This relation should be compared with the relation in our notation, discussed
in section 2: BelT = B bu1k + 2b surfjt, where the factor 2 is put in, because a layer has
two surfaces. The components Mil and MI2 are related to V· 2 = -By·2jc Y and A£,2 =
- Bd j c", respectively, in such a way that, for (bulk) isotropic material, one has MIl = As
and the 'isotropy condition' Mil = -2MI2. The intrinsic surface magnetoelastic tensor
is expected to be strongly anisotropic, while magnetoelastic interactions in interdiffusion
layers lead usually to an isotropic form of [M]surf. Information about the symmetry of
[M]surf, therefore, is of great importance to determine the intrinsic nature of magnetic
interactions in the interfaces. As an example, we give here some results obtained by
Szymczak and co-workers (see e.g. Szymczak 1997) applying the SMFMR technique (see
section 3.4). Experimental data obtained for several Ni-based multilayers are presented
in fig. 52(a, b). The fitting parameters for the magnetoelastic tensor components Mij
are listed in table 3. In isotropic approximation, (Mil )bulk should be equal to the
magnetostriction constant for polycrystalline material As. The difference between As
(= -35 X JO-6) of polycrystalline nickel and (Mil )bulk was attributed, for Ni/Ti, with
(Mldbulk = -45 x 10- 6 , to the texture of the magnetic sublayers, and for Ni/Pb, with
(Mil )bulk = -19.5 X JO- 6, to the strong reduction of the magnetisation (Zuberek et
aJ. 1991). The strongest surface-tensor anisotropy, i.e. the ratio (MI dsurf/(MI2)surf, was
observed for Nil Ag multilayers. This is taken as clear evidence for the existence of
intrinsic surface magnetostriction. The SMFMR technique has also applied to study
the magnetostriction in Co-based multilayers (see Szymczak 1997). In these cases,
20-r--------------,
....
* -
I~
.-
-..
~
' -'
i
0
-- • --'&
~ -20- - ; MIJ
.--.
Jt--
!'P--- (a)
0.0 0.1 0.2 0.3 0.4 0.5
l/tNl (am")
15
.,=
-..
'-'
i -1
0
*" "
-." "
.
"
.- "
...."
.-"
""
.-
.-"
i "" .-.-
-3
, "" ,At
.- .-"
.- "
"...... Mil
(b)
.- .-
-4
0.0 0.1 0.2 0.3
I
l/tNl (nm- )
Fig. 52. Dependence of the magnetoelastic tensor components Mil and MI2 on the inverse Ni layer thickness
for several Ni-based multilayers. (a) (.&) NiIPb and (*) NilAg. (b) (.&) NilTi and (*) NilC multilayers. After
Szymczak (1997) and refs therein.
however, no indication of surface magnetoelastic coupling was observed (e.g. in Co/Ag

multilayers).
GdlFe multilayers fabricated by rf-sputterring exhibit clearly a magnetostriction con-
tribution due to interdiffusion layers. Samples deposited by de-sputtering, however, have
sharp interfaces. The variation of their effective (saturation) magnetostriction O'eff) is de-
scribed as a function of the inverse of the iron sublayer thickness, tFe -I, (see fig. 53). In
this case, the magnitude of the bulk (Abulk) and surface magnetostriction (Asurf) can also
be deduced assuming the following relation:
Aeff = Abulk + 2tie' Asurf. (28)

TABLE 3
Values of M II and M 12 tensor components and their ratio MIl / M 12 for several multi layers
Samples Bulk Surface

Mil MI2 MII/MI2 Mil MI2 MII/MI2
(10-6 ) (10- 6) (10- 6 ) (10- 6 )
Niffi -45 21 -2.14 67 -31 -2.16

NilC -32 17 -1.88 SI -45 -I.S0
NilAg -36 17 -2.12 II -7 -1.57
NilPb -19.5 8 -2.44 14 -6 -2.33
After Szymczak (1997).
-1,---------------,
,•
GdlFe multilayers "
-2
, ,
, ,,
,
,,
,,
, ,"
,,
-5--
,,
*
0.0 0.1 0.2 0.3 0.4 0.5
lItF e (nm")
Fig. 53. Magnetostriction as a function of the inverse Fe-layer thickness for GdlFe multilayers. After Szymczak
(1997) and refs therein.
It turns out that Asurf (= 10.2 x 10- 6 ) exceeds the observed bulk magnetostriction Abulk
(= 6.5 x 10-6 )
(Szumiata et al. 1993; Zuberek et al. 1995).
An excellent agreement with relation (28) was obtained for the magnetostriction
data of FeCo/Au multilayers (fig. 54) (Zuberek et al. 2000), from which the values
6 6
Abulk = 57.8 x 10- and Asurf = -18.2 x 10- were deduced. Note that the obtained
value of Abulk corresponds to that of polycrystalline FesoCoso alloys (Bozorth 1951).
Lafford et al. (1995) reported a similar analysis for the magnetostriction of C032Pd6S!Ag
multilayers (see fig. 55). Unfortunately, since only one magnetoelastic tensor component
(or saturation magnetostriction) is determined, definite conclusions cannot be drawn from
such experiments.
Investigations on SmFeBffbFeB multilayers have shown that strain and stress are trans-
ferred effectively at the interface (Shima et al. 1997). In these SmFeBffbFeB multilayers,
the thickness of the layers was varied, and it was found that the magnetostriction is sensi-
tively affected by Young's modulus, the Poisson ratio and the thickness of the constituent
layers.
FeCo/Au multilayers
•
•
•
35+-~-r----.....,.---r-~-,--""'---r-..---i
0.0 0.1 0.2 0.3 0.4 0.5 0.8
Fig. 54. Magnetostriction as a function of the inverse Fe-layer thickness for FeCoiAu multilayers. After Zuberek
et al. (2000).
C0 32Pd68!'Ag multilayers
......
'f
-
=
.... .&JO
!
-
)
a~ .1000
·1500
·2000
0 2 4 , 10 12 14
teoN (om)
Fig. 55. Aeff· tCoPd as a function of tCoPd for CoPdlAg multilayers. After Szymczak (1999) and refs therein.
The changes in magnetic and magnetostrictive properties of multilayers which are

due to the presence of interdiffusion layers formed at the interfaces, were studied by
Quandt et al. (I 997a, 1997b) and Due et a1. (2000<1), for TbFeCoIFe multilayers. In
these multilayers, the amorphous state was formed in the giant magnetostrictive TbFeCo-
layers, while the Fe-layers were crystallised. This is confirmed by XRD investigations.
Annealing at temperatures T A from 150°C to 350°C made the interface spacers to expand
and the core of the individual layers to shrink. Assuming the same value of magnetisation
for the TbFeCo-layers and the TbFeCoIFe interfaces, Due et al. (2000d) have estimated
the thickness of the extended interface spacer due to the interdiffusion (t x ) by applying
expression (25a) in the following form:
MFe(tFe - tx) - MThFeCo(tThFeCo + tx)

(M TbFeCo/Fe ) =
tFe
+ tTbFeCo . (29)
rI' 1..........
..
..-;~~
... - .....
"' :.~
.
"''''
...
..
. .te':,....
;... •
~
..., ...
-
.\
>
I
I
300 I
I
I
-.
I
200 T crysl (single: film)

E
:r:"
~100 1:
I
I
I
700 750 800 850

T.[K]
Fig. 56. The coercive field of different Terfenol-DlFe multi layers with Terfenollayer thickness Istric = 10 nm,
and Fe layer thickness: Isoft = 2 nm (e), 6 nm (TSB) and 8 nm (.). The dashed line shows the crystallisation
temperature of a 2-/Lm thick Terfenol-D film. After Farber and Kronmiiller (2000a, 2000b).
At T A = 350°C, Ix was found to be about 1 nm. Auger electron spectroscopy (AES) depth
profiling showed that the interdiffusion was not found after annealing at 280°C, but that
the layer structure was almost destroyed after annealing at 480°C (Quandt et al. 1997b).
Annealing at temperatures above 820 K destroys the multilayer structure and then the
film loses its soft-magnetic character. This is clearly seen from the microstructure graph
illustrated in fig. 56.
Annealing at medium temperature leads to an increase of the magnetostrictive suscep-
tibility and a decrease of the saturation field (as well as coercive field), while annealing
at higher temperatures usually reduces dramatically saturation magnetisation and then the
saturation magnetostriction due to the expansion of the interface spacers. This is due to the
formation of the so-called 'magnetostriction dead layers' (Farber and Kronmiiller 2000a).
In case, however, a perpendicular magnetic anisotropy is created, associated with the mod-
ification of the structure and/or composition in the interface, the magnetostriction can be
enhanced slightly. This phenomenon is observed in TbFeCoIFe multilayers annealed at
350°C (Duc et al. 2000d).
6. Magnetoelasticity of rare-earth superlattices
Magnetic rare-earth superlattices RIM (M = Y, Lu) behave in a variety of ways. Two

remarkable features in these artificial structures are: (i) helical magnetic order is found to
propagate through non-magnetic layers and (ii) different magnetic phases are identified in
the superlattices when comparing to bulk elements. The first feature has been explained in
the framework of the RKKY interactions through a spin density wave and the discreteness
of the interleaving material, which produces an increase of the magnetic period. The
strain induced in the crystalline structure by the mismatch between layers of different
elements was thought to be responsible for the second magnetic feature. The strain can
couple to the magnetisation either by modifying the indirect exchange as was suggested
to explain the suppression of the conical c-axis ferromagnetic phase transition in ErfY
(Borchers et al. 1991), or by altering the energy balance between the exchange and
magnetoelastic contributions. The latter mechanism accounts for magnetic changes in
Dy-based supersublattices. Bulk Dy has a ferro-helix first-order transition at 85 K. It is
suppressed or enhanced up to 100% depending on whether the Dy lattice was expanded (in
DylY) (Erwin et al. 1987) or compressed (in DylLu) (Beach et al. 1993), respectively.
O'Donovan et al. (1998) performed low-temperature X-ray measurements on a DylLu
superlattice and found that the spontaneous ferromagnetic transition is accomplished by
(continuous) formation of orthorhombic domains which preserve the area of the unit cell
in the basal plane. The importance of epitaxial clamping in this system was emphasized.
Similarly, the c-axis cone phase was observed to be suppressed in HolY (Jehan et al.
1993), while ferromagnetic order existed below 30 K in HolLu superlattices with less than
20 Ho-atomic planes (Swaddling et al. 1992).
As regards the stress due to the misfit of lattice parameters, magnetoelastic studies of
superlattices were carried out by Ciria et al. (1995), Del Moral et al. (1996, 1998) and
Amaudas et al. (1996), applying a low-temperature cantilever technique. Their results have
elucidated the role of epitaxial strains. The magnetoelastic coefficient By·2 (corresponding
to the distortion of the cylindrical symmetry of the superlattice basal plane; see section 2,
eq. (9» was determined from the magnetoelastic stress measurements (fig. 57). The thermal
variation of BY measured in a field of 12 T is plotted in fig. 58 for the {H06fY6}100 and the
{H0311Lu 19 }50superlattices. (The subscripts denote the number of atomic planes per layer,
and the number oflayers in the superlattice, respectively. Alternatively: [H031 /Lu 19] x 50.)
The BY values for the {H06/Y61100 sample are much larger than those for bulk Ho.
Moreover, its thermal variation deviates from Callen and Callen's law of the cubic power
variation of the reduced magnetisation (m 3 ) at low temperature for bulk rare earths. For
the HolLu superlattices with thick Ho and thin Lu layers (e.g. {H03t1LuI9}) the BY(T)
variation approaches that of bulk Ho at high temperatures, but below 50 K it shows a
deviation. This was attributed to an opposite-sign surface magnetostriction which scales as
m4 at low temperatures and as m 2 at high temperatures. At low temperatures, BY (T) is
simply expressed as
(30)
with BVol Y (0) = + 1.43 GPa and B~urf(O) = -1.38 GPa. The surface magnetostriction is
masked in {H06/Y6} I()() due to the large epitaxial effect.
Magnetoelastic stress isotherms (T a and (Tb of the {H040/Lu 15 }50 superlattice, clamped
along the a and b axes of the hcp structure, respectively, and with the applied magnetic
field along the easy b axis are presented in fig. 59 (Del Moral et al. 1998). The sudden
l
9-
1O
--4.05
,
4
e
~.I ·z
o
o 2 4 6 • 10 12
Appliedfield (T)
Fig. 57. Magnetoelastic stress isotherms for a (H06fY61100 superlattice: 0"0 and O"b correspond to clamping
along Q- and b-superlaltice axes, respectively. Inset: magnetic phase diagram «0) from magnetoelastic stress and
(e) from magnetisation measurements; FM- ferromagnetic. F - fan and H - helical phases). After Del Moral
et al. (1996).
0.5
• • •
0.4 •• • • •
'2 0.3 •
tS........
~ 0.2
...........
I:Q ~o\ ;~.~ ~ ~.
•• •• b. {HoJ-lI6l!lO •
0.1 ..
., ~.
0
0 50 100 150
Temperature (K)
Fig. 58. Thermal variation of the magnetoelastic coupling parameter BY for the superIattices (H06fY61100 (e)
and (H031 fLu 19150 (6), and for bulk Ho (dashed - - -). The dash-dotted and continuous lines are calculated (see
main text). After Amaudas et al. (1996).
onset of stress and saturation at low temperatures is interpreted as a direct transition from
a helical to a ferromagnetic state. As the temperature is raised, the strain increases less
abruptly, indicating the transition to a fan structure. The variation of the magnetoelastic
coupling coefficient BY (T), or MY (= 2(0' a - O'b» in the notation of Del Moral et al.
o
[Ho.JLuu1x.SO
~I
\ -0.1-
I"---
"~-.:~=:::====~1.cac:
:: 110< fJ
.e
IlOK
---------==
~
r,-------------1OK -0.2
0
-eel
Q..
0....-
-0.04
m~~==========o4OK ~
II:)
.. &oK
-0.08
o 246 8 W ~
Applied field (T)
Fig. 59. Magnetoelastic stress isotherms for a IH040/Lu IS150 superlattice: Ua and Ub correspond to clamping
along the Q- and b-superlattice axis, respectively. After Del Moral et al, (1998).
(1998), as a function of the number of Ho-atomic planes at T = 10K is presented in fig. 60

for {HonlLu15}50 superlattices. MY was expressed as:
(31)
Here, the first term describes the volume (bulk) value of MY, the second term is the
interface contribution and the third term is determined by the lattice misfit. It turned
out from this analysis that M~ol = 0.275 GPa. M:Urf/(c/2) =
-7.0 GPa and D~ol =
-116 GPa, where c is the c-axis lattice parameter for Ho. This leads to the following
conclusions: (i) M~ol equals the bulk value for Ho, (ii) the interface magnetoelastic stress
is very strong compared with the volume one. up to 6.4 times larger for nHo = 8 and of
opposite sign and (iii) the misfit stress is of the same order of magnitude as the interface
magnetoelastic stress. In the spirit of the description of eq. (30) and assuming 'single-ion'
CEF contributions for the rare-earth ion, the expression for M~ol can be generalised as
(32)
Here, i 5/2 is the reduced Bessel function, and its argument L -I (m) is the inverse
Langevin function (see Callen and Callen 1963, 1965). Using the values given above for
---. 103 103

~
c,
0
'-' [Hon I LUIS] X 50
---. 1()2 > 1()2 3:
::s ~-. .c!
...J
C ::s
+0 ::t
0
::t 10'
c:: t 10 ' ---.
'-' 0
ci. "tl
~
~:l '-'
::E 10° 10°
10' 102 103 104
nHo
Fig. 60. The variation of the basal plane cylindrical symmetry breaking magnetoelastic stress, M[xp. at 10K and
at an applied magnetic field of 12 T, multiplied by (nHo + nLu). as a function of nHo (where nHo and nLu are
the number of atomic planes in the Ho and Lu blocks. respectively) for IHo,.f[..u I S I so superlattices. The line
indicates the fitting by the theoretical model. After Del Moral et al. (1998).
0.7
X HO,.ILu,~
0.6
{;.
HolOlLuu
---.0.5
~
{;. • Ho",ILu,~
p..
o 0.4
Ho./'-u ,S
'-'
0.3
::E 0.2
0.1
O'--_.l-_-'--_-'--_...J-_~_ ......- - L . . - - - J
o 20 40 60 80 100 120 140
Temperature (K)
Fig. 61. The variation with temperature of the magnetoelastic stress, MY (IZ T) multiplied by (nHo + nLu)/nHo
for IHolIlLuls lso superlattices. The lines are obtained by adapting reduced-magnetisation power laws. see Del
Moral et al. (1998).
M~ol' M:urr/ (c / 2) and D~ol' and taking ex = 4 below a certain temperature and ex = 2 above
that temperature, the fitting obtained for {HolIlLuI5}s0 superlattices with n = nHo = 14,
30,40 and 45 (fig. 61) is reasonably satisfactory. This, once more, confirms the relevance of
the interfacial stress contribution to the magnetoelastic stress. In addition, it does suggest
strongly that both volume and interface magnetoelastic coupling originate from single-ion
crystal-field terms.
Using X-ray spectrometry, De la Fuente et aL (1999) measured the thermal dependence
of the a and c lattice parameters in a {Er3ZlLu IO}40 superlattice. Again, strong single-ion
CEF contributions, originating from the ErlLu interfaces, were observed in the volume
and tetragonal distortions. Their analysis reveals also important contributions caused by
epitaxial misfit.
7. Magnetostriction of R·T sandwich films
Sandwich films of the type RTIR'TIRT made by stacking coupled layers with typical
thicknesses of 100 nm have been intensively studied in the last decade (Dieny et al.
1990, 1991a, 1991b; Givord et al. 1993, 1996; Wiichner et al. 1995). Because properties
such as magnetisation or anisotropy differ from one layer to the next, the reversal of the
magnetisation occurs at a different value of the coercive field for each layer. When the
reversal takes place in a given layer but not in the adjacent one, a domain wall will be
formed at the interface between the layers, in order to minimise the exchange energy.
Such a domain wall has the particular feature of extending over the whole film surface
and therefore is referred to as an extended domain wall (EDW). In these systems, the
magnetostriction, which is fundamentally different from that observed in the multilayers
discussed in the preceding section, is associated with the creation of this domain wall.
Magnetostriction associated with domain wall formation has been known for a long time
as being due to the progressive rotation of magnetic moments making up the domain wall.
Normally, this effect is small since the volume occupied by the domain wall is always quite
small. In the systems with EDWs, however, the domain wall can occupy an extremely large
fraction of the total volume of the sample.
The effects ofEDW formation were investigated on sandwiches consisting of Nd-CofIb-
ColNd-Co (system 1) and Tb-Co/Nd-Co/Tb-Co (system 2), in which a well defined easy
axis was created by annealing at 150aC in a field of 2 T. The Tb magnetic moment
is dominant in the Tb-Co layers at room temperature (Givord et al. 1996; Betz 1997).
In order to better understand the magnetisation process, the coupling between one pair
of layers was suppressed by a thin oxide layer at the interface. The configuration of
magnetisation and of the magnetic moments in zero-magnetic field is illustrated in fig. 62a
for the sandwich system 2 (layer thicknesses 57/67/57 nm). The magnetisation loop
at room temperature is shown in fig. 63. Starting from the high-field state, where the
magnetisation of the system is well saturated in the applied-field direction, we see that
the Co moments between layers are antiparallelly coupled and an EDW is formed at the
coupled interface (fig. 62b). As the field decreases, a (positive) critical field (of 8.5 mT)
is reached, where the EDW at the Nd-CofIb-Co coupled interface is suppressed by the
reversal of the moment in the Nd-Co layer (fig. 62c). Note that magnetisation reversal
in the (coupled) Tb-CO layer is prohibited by the large coercivity (associated with the
sperimagnetic Tb moments). The reversal of the uncoupled TbCo layer occurs at -46 mT,
and, finally, for the coupled TbCo at a higher field of -96 mT due to the interlayer Co-Co
exchange coupling and the (re)creation of the EDW (fig. 62(d, ej). The magnetostriction is
shown in fig. 64. While the high-field magnetostriction exhibits a behaviour similar to that
observed in single layer Tb-Co films, the low-field magnetostriction measured along the
easy axis shows a rather complex field dependence with magnetostriction anomalies and,
in particular, extremely large magnetostrictive susceptibilities. In the Nd-CofIb-ColNd-
Co sandwich system, a magnetostrictive susceptibility (ob/o#LoR) of 556 MPa/f was
observed even at #LoR = 2 mT (Betz 1997). This field dependence can be understood on
the basis of the magnetisation process depicted above. At saturation, the magnetostriction
(which can be either positive or negative) is maximum. As the field is reduced, the
magnetostriction decreases as the EDW becomes larger (and the Tb sperimagnetic cone
(a) magnetic moment magnetisation

zero-field
un-coupled Tb •
, '..•.
........ Co '.n ..·.·.:. _ " ,-'.t.
.- Tb-Co
• ........ Co
> ••. ,,,,..:.,-- .•_."'"
interface ~ ~.', ''''''''~ .~.
Nd
• Nd-Co
coupled
interface
~
Tb • ........ Co .- Tb-Co
(b)
positive Tb - -•• +-- Co - . Tb-Co
high-field
Nd • ........ Co • Nd-Co
EDW-.j{~1~UF.~;~~
Tb • +-- Co - . Tb-Co
(c) Tb
..,
• +--
..
;..-"
Co -. Tb-Co
positive
~,
low-field Nd • +-- Co
• Nd-Co
Tb • +-- Co -. Tb-Co
(d)
negative
Tb • ........ Co .-
• " " ',.... -<~ ',~," .,
Tb-Co
low-field Nd • +-- Co
• Nd-Co
Tb • +-- Co -. Tb-Co
Tb ••- - ........ Co . - Tb-Co

(e)
negative Nd. +-- Co • Nd-Co
high-field ,I.'r.
~
~tl{~.~);~
.,;~u..:.'f'1.:
~:1:"""-~)J~t·:~,,c;,··~
• • _" _~!';llr:<61'", ••;lI;'!!V":(R~.".~
Tb· ........ Co . - Tb-Co
Fig. 62. Configuration of magnetisation and magnetic moment in the sandwich TbCoINdCofIbCo film in zero
magnetic field (a) and during the (de)magnetisation processes (b-e).
MAGNETOELASTIClTY IN NANOSCALE HETEROGENEOUS MAGNETIC MATERIALS 165
0.015
Tb-Co/Nd-Co/Tb·Co
0.010 300K
N
...... 0.005
eu
':3 0.000
e
II)
- -0.005
:E
-0.010
-0.0 15
- 0.2 ·0.11 o 0.1 0.2
~H (T)
Fig. 63. Magnetisation versus applied field measured on the sandwich Tb-CoINd-CoITb-Co system at 300 K.
After Givord et aI. (1995).
0.0 IS
Tb·Co/Nd·Cofl·b-Co
300K hord
8xl.
...... -0.5
"'
0..
-
:::E
m -1.0
-1.5
·0.3 - 0.15 0 0.15 0.3
lloH (T)
Fig. 64. Magnetostriction versus applied field measured on the sandwich lb-CoINd-CoITb-Co system at 300 K.
After Givord et aI. (1995).
opens up a little bit). At around 8.5 mT, the EDW is destroyed. All Tb moments contribute
now to the magnetostriction, and thus a large change is observed. When the external
field decreases and changes its direction, the cone of Tb moments opens up further,
leading to the observed decrease of the magnetostriction. At the coercive field for reversal
of the magnetisation in the uncoupled TbCo layer (-46 mT), a discontinuity in the
magnetostriction takes place, since these Tb moments become more aligned along the
applied field. Further variation of the field opens the cone in the coupled TbCo layer
still more (evidently exceeding the closing of the cone in the uncoupled layer). Finally,
at -95 mT the EDW is re-created with a sudden increase of the disorder in the magnetic
0.4 (a)
0.2
(25nm TbFei 8nm FeCoBSI)

0.0 t---------i+t--------~
-0.2
-0.4
-0.6 -0.4 -0.2 0.0 0.2 0.4 0.6
·6
(b)
-4
-2
O~-----__1f_-----,.tt_-~+_----__r":I
81....--..._.L.-......._.L.--..._......~_.L____'__....L..___'___'
-0.6 -0.4 -0.2 0.2 0.4 0.6
Fig. 65. Magnetisation and magnetostriction versus applied field measured on a TbFe(25 nrn)/FeCoBSi(8 nm)
multilayer. After Quandt and Ludwig (1999).
configuration giving rise to a large transition in the magnetostriction. Still further increase
of the field does narrow the EDW and closes the Tb cone gradually, in both Tb-Co
layers.
Quandt and Ludwig (1999) studied the influence of domain wall formation on the
magnetic and magnetostrictive behaviour of multilayers TbFelFeCoBSi(8 nm) with various
700
600
500
~ 400
- 300
=
~
«:
200
100
o
-0.8 -0.4 o 0.4 0.8
Ii.H (1)
Fig. 66. Magnetostriction hysteresis loops of a ThFeCo single-layer film and a FetrbFeCoIFe sandwich films.
After Due et al, (200lc).
thickness of the TbFe-layer (see section 5.2). For a TbFe thickness of 25 nm, domain walls
(EDW) can be formed at the interfaces. and the magnetisation process is comparable to
that in the sandwich systems under consideration. In this case. the transition (rotation
of the TbFe moments into the field direction) occurred in a rather wide field range
(say. from 0.05 T to 0.3 T; fig. 65a). because of the high number of layers. which
are not absolutely identical. Like above. the field dependence of the magnetostriction
(fig. 65b) was explained in terms of the local orientation of the magnetisation vectors.
For positive magnetostriction materials (b < 0). a magnetisation orientation parallel or
antiparallel to the measurement direction results in a positive strain, while a perpendicular
orientation leads to a negative strain. In low fields. the layers are still exchange
coupled and thus the magnetostriction is similar to those of thinner layer thicknesses.
When the (TbFe) magnetic moments are rotated into the field direction. the domain
wall is formed, and some TbFe moments rotate out of the external field direction.
The negative magnetostrictive susceptibility is associated with this process. At higher
(parallel) fields, the domain wall width is reduced. and the (positive) magnetostriction is
recovered.
The sandwich system discussed above is a composite material. which gives evidence
for the existence of the domain wall and of its influence on the magnetostriction. These
systems are not optimised with respect to magnetostriction. Nevertheless. their high mag-
netostrictive susceptibility is interesting. For applications. it may be worthwhile to mention
here (fig. 66) the magnetostriction data of a Fe(25 nm)!fbFeCo(5000 nm)/Fe(25 nm) sand-
wich (Due et al. 200lc). In comparison with the corresponding magnetostrictive TbFeCo
single-layer film. the magnetic softness was strongly improved for this sandwich right after
depositing. The (not so high: All = 180 x 10-6) saturation magnetostriction is already well
developed at /LoR ~ 20 mT.
8. Magnetostriction in nanocrystalline and granular magnetic materials
Nanocrystalline materials obtained by controlled crystallisation of Fe-rich amorphous

alloys are composed of crystalline grains embedded in a residual amorphous matrix. These
materials belong to a wide class of heterogeneous structures, including organo-metallic
complexes or metallic clusters deposited on graphite or build in polymers on a molecular
scale (see e.g. Gubin et al. 2000; Koksharov et al. 2000), and composites consisting of
nanoscale up to microscale grains embedded in either a metallic binder (see e.g. Herbst
et al. 1997; Pinkerton et al. 1998) or in some resin or polymer (see e.g. Duenas and
Carman 2000). Granular solids consisting of magnetic particles embedded in an immiscible
medium have been intensively studied in the last decade, because of the interest of their
physical properties as well as of their technological applications. Indeed, these materials
exhibit novel phenomena such as superparamagnetism, giant magnetoresistance and giant
magnetic coercivity (Chien 1991; Hernando et al. 1997; Due et al. 2001d and references
therein).
In this subsection we start by continuing, in a way, the discussion in section 4.3 on the
attempts to control the nanocrystallisation process. There, attention was focused on the
possibility to manipulate the magnetic anisotropy. In section 5.1, it was shown that the
crystal growth can also be limited by the layer thickness in multilayer structures In the
present section, we discuss in particular the magnetostrictive properties. Originally, the
excellent soft magnetic properties of these materials have been associated with the absence
of magnetostriction in order to minimise magneto-elastic energies. In the amorphous state,
however, the material reveals a (high) positive magnetostriction of As ~ +23 X 10-6 . In
the nanocrystalline composite material, this positive magnetostriction is compensated by
the negative magnetostriction of the crystalline material. The effective magnetostriction
of nanocrystalline alloys at different stages of crystallisation is illustrated in figs 67(a,
b) for (Fe,Cu,Nb,Si,B) alloys (see Herzer 1997 and references therein). This effective
magnetostriction Aeff is usually interpreted as the simple volume average of the positive
contribution from the amorphous matrix (Aam) and the negative one from the grains (Acr)
(Herzer 1991):
(33)
where p is the crystalline volume fraction.

As an example, fig. 68 shows the decrease of Aeff with increasing crystalline volume
fraction. Clearly, in order to attain near zero magnetostriction in nanocrystalline Fe-based
alloys it is necessary to have a large crystalline volume fraction with negative magnetostric-
tion. It was reported that Acr ~ -6 x 10-6 for a-Fe8oSi20 grains in the (Fe,Cu,Nb,Si,B)
system and that Acr ~ -4 x 10-6 for a-Fe grains in the (Fe,Zr,B) system (Suzuki et al.
1991). Tejedor et al. (1998) report a change of sign of the magnetostriction upon anneal-
ing Fe 73.5 Cu I Nb3Si 16.5B6 ribbons. With respect to nanocrystalline Fe 73.5 Cu I Nb3Si 13.5B9
rapidly solidified ribbons, Chiriac et al. (1999) stressed the importance of the 'inheritance'
of the short range order in the melt. Holzer et al. (1999) found that the low-temperature
temperature dependence of the magnetostriction in such ribbons follows a Bloch T 3/ 2 law.
See also the low-temperature studies of Skorvanek et al. (2000) on the crystalline-fraction
-
<D
I
30
(a)
,-:. :a--_I._,
Fe73.5Cu1N~SixB22.S.x
annealed 1h at T.
-.e
0
... ··········'··0
\ .
T"""
20 \ :
as cast \ :
\ :
C \ :
0 \ :
\ :
15
....III
'C
10 e :
Si = 16.5\ 0.13.5 at%
.,<>-
•
-0
Q)
c:
C) 0
•
• l>..
'. e-....o'
-·- ___ e
O.
.'
0·'
m
:2 -5 I.
0 400 500 600 700

Annealing Temperature, T« (DC)
15
to (b) Fe-Cu1 Nb3SixBz.x
I annealed1h 540'C
-
0
T""" o ./"'0-' o; SI+B(.\~)
10 I ,e, o :18.5 0 20.5
f/l
0 I • 22.5 0 23.5
-e I
,
I "'0...
C
0 5 6' bn.
15 ~=t-Fe·Cu,SixNb5.7B13
-....
'C
III
0
Q)
0
I
~Fe84Nb789
):::Fe-CUO_1Zr6-782.0
8'8-
b,-
'Q--
c:
C) '<>
m
::! -5
0 5 10 15 20
Si-Content, X (at%)
Fig. 67. The saturation magnetostriction, AS. of Fe-Cu-Nb-Si-B alloys: (a) influence of the annealing temperature
and (b) influence of the Si content in the nanocrystalline state. The figure includes the data for Fe-Nb-B (A.) and
Fe-(Cu)-Zr-B (6) alloys. After Herzer (1997) and refs therein.
dependence of the magnetostriction of Nanoperm-like (Fe,Nb,B) alloys. Upon increasing

the annealing temperature, and thus increasing the (nano)crystalline fraction, Chiriac et
aI. (2000a, 2000b) observed a change of sign of the magnetostriction in nanocrystalline
Fe90Hf7B3 ribbons. In a study of annealed nanocrystalline (Fe,Zr,Nb,B) melt-spun rib-
bons, Makino et aI. (2000) found minimal core losses in a Fes5.5Zr2Nb4BS.5 alloy, which
exhibited zero nagnetostriction.
In many cases, however, the above simple model did not fit the experimental results even
though the changes in ).am with the evolution of crystallisation were considered (Slawska-
Waniewska et aI. 1994; Herzer 1993). In this case, an additional surface contribution
was introduced. Indeed, nanocrystals usually have a diameter of 10-15 nm and hence a
<0
6 20
C 10
.Q
U
I
'1:
0+----------=__._----1
c
Cl
CIl
::i: -10 +-.....--.--.--.--..---,-~__r_~---l
0.0 0.2 0.4 0.6 0.8 1.0
Crystalline Fraction
Fig. 68. Dependence of the saturation magnetostriction, As, on the fraction of the precipitated bee Fe-Si grains
for samples annealed at different temperatures and times. After 1'warowski et al, (1995).
TABLE 4
The fitted parameters (see text) of the saturation magnetostriction for several nanocrystalline alloys and
multilayers
Samples Acr Aam AS(S/V) AS k Refs

(10- 6 ) (10- 6 ) (10- 6 ) (10- 6 nm) (10- 6 )
FeSSZr7B6Cu2 alloys -4 2.2 6.55 10.9 12.1 [1,2]

Fe73.SCul Nb3Sil3.sB9 alloys -6 25 3.37 5.57 -11.5 [2,3,4]
FelC multilayers 45.7 [5]
FeCoiAu 58.6 -18.2 [6]
FelGd -6.5 I [2]
[I] Slawska-Waniewska et al. (1996), [2] Szymczak (1999), [3] Slawska-Waniewska et al, (1997), [4] Gutierrez
et al, (1995), [5] Zuberek et al, (1994), [6] Zuberek et al. (2000).
large fraction of their atoms are surface atoms. Moreover, it was found from Mossbauer
measurements that the Fes5Zr7B6Cu2 nanocrystalline sample, annealed at 540°C, consists
of three components: crystalline, amorphous and interfacial phases with the volume
fractions 52.5%, 31.3% and 16.2%, respectively (Slawska-Waniewska et a1. 1997). The
hyperfine field Bhf is 33 T for the crystalline phase, distributes below 25 T for the
amorphous phase, and ranges from 20 to 35 T for the interfacial phase. Assuming that
the grains are spherical and 10 nm in diameter, the thickness of the interfacial layer was
estimated to be about 0.6 nm. Taking into account the different contributions, the effective
magnetostriction of the nanocrystalline materials has been approximated by
Aeff = pAcr + (1 - p)(A am + kp) + p(3A surf )1R. (34)
Here, the parameter k expresses the changes of the magnetostriction due to the change
in composition of the residual amorphous matrix with the evolution of crystallisation. In
fact, a linear approximation Aam(p) = Aam(0) + kp is applied. The last term describes
the surface effects in which R is the effective radius of the grains, i.e, 3/ R is the
surface to volume ratio for the spherical grains (SI V in table 4). Figure 69a shows the
'9 25 •
0
.....
..!'
20 I " ...
...
(a)
15 • experimental
l:
0
10
ts
'i::
'1ii 5
~l: 0
Ol p,"
III -5
~
(b)
'9 4
0
.....
..<."
l:
0
ts -2
-
'i::
Gi
Ul
0 -4
• experimental
l:
Ol -6
III 0 20 40 60
~
Crystalline Fraction p [ % ]
Fig.69. Saturation magnetostriction, AS, versus crystalline fraction, p. in (a) FeS9Zr7B4 and (b) FeSSZr7B6Cu2
nanocrystalline alloys. After Slawska-Waniewska et al. (1996).
magnetostriction for Fes9Zr7B4, observed by SMFMR (see section 3.4). In a first fitting
attempt, Slawska-Waniewska et al. (1996) did apply eq. (34), with Aam(o) + kp replaced
again by Aam (p), because the linear approximation mentioned above could not be applied.
Actual Aam(p) values were estimated from magnetostriction data obtained on a series of
amorphous Fe93-xZr7Bx alloys. Further deviations were ascribed to the 'snowflake-like'
crystallites (with high SN values). Figure 69b shows the same attempt for FeS5Zr7B6CU2,
where almost spherical grains with a diameter of 10 nm were observed. pm(p) values
were now deduced from magnetostriction data obtained on amorphous Fe91-xZr7BxCu2
alloys. The indicated linear contribution of the 'surface term' was deduced then. Since
for this series, a linear approximation for Aam(p) appears to work well, in later studies
eq. (34) was applied (at the same time replacing the value Acr = -7 x 10-6 by the
more common value for a-Fe grains Acr = -4 x 10-6 ) . Figure 70 shows the observed
saturation magnetostriction of Fe73.5Cu,Nb3SiI3.5B9 nanocrystalline alloys as a function
of the volume fraction of the crystalline phase p. Here, eq. (34) has been applied too.
The fitted parameters used to describe the experimental data are listed in table 4. The
positive value of k in the case of Fes5Zr7B6CU2 indicates that the magnetostriction of
the amorphous phase increases with a decrease of Fe content. This is in agreement
with the experimental results of Slawska-Waniewska et al. (1996) mentioned above. In
the case of Fe73.5CU I Nb3Si I3.5B9, the negative value of k reflects the decrease of the
magnetostriction of the residual, Band Nb enriched, amorphous matrix with increasing
crystalline fraction. The important feature of the results discussed is the difference of
15
'1/
0
-,-,
10
.....
~
~ 5 ..................~"." =:~, a
0
_·_~ •••••O·· _<;4·· · ~.O •.... Q •••• 1
-5
0.0 0.2 0.4 0.6 0.8 1.0
crystalline fraction
Fig. 70. Saturation magnetostriction, AS. versus nanocrystalline fraction in Fe73.SCul Nb3Sil3B9 alloys. The
numbers 1.2.3 denote the different contributions according to eq. (34). After Szymczak (\999) and refs therein.
the signs for the bulk and surface magnetostriction. It seems to be a general rule as
similar observations were found in multilayers and superlattices, see also sections 5
and 7. Notice, however, that Areas et a1. (1998) found that, at applying transverse fields
to nanocrystalline Fe73.sSilS.5B7Nb3CUJ samples, for low fields the total elongation
is negative whereas it shifts to positive values for increasing transverse applied fields.
This behaviour was explained as a consequence of spatial fluctuations of the average
magnetostriction, correlated in length to the domain width. Obviously, the problem of
surface/interface magnetoelasticity requires further studies, in particular, magnetostriction
measurements above the Curie temperature of the amorphous phase, where only the
ferromagnetic grains should give a magnetic contribution, simplifying separation between
bulk and surface effects.
Alves et a1. (2000) have studied stress-induced anisotropy in Finemet- and Nanoperm-
type nanocrystalline materials, like Fe74.3Nb2.7CuISils.5B6.5 and Fes4Nb3.5Zr3.5BgCul,
applying flash stress-annealing. In Finemet a strong transverse anisotropy was induced,
for example 2600 J/m3 after annealing at 610°C for 30 sunder 400 MPa, higher than by
field-annealing (about 10 J/m3 ) . These effects are assumed to be located within the grains
in magneto-elastic form due to tensile back stress exerted by the amorphous phase. In
Nanoperm type nanocrystalline alloys, the authors observed a low longitudinal anisotropy
(around 20 J/m3 ) , in spite of a negative magnetostriction of the Fe crystallites (around
-4.1 ppm). This observation was also interpreted by the correlation between the sign of
the induced anisotropy and grain size due to the contribution of interface properties.
The existence of the surface contribution to the effective magnetostriction of nanocrys-
talline alloys has been confirmed theoretically in terms of the dipolar model
(Szumiata et al. 1999). These authors showed that, due to the limited radius of the nanopar-
tides, additional magnetostrictive stresses are localised at the interfaces. The evaluation of
the influence of the dipolar interaction on the magnetostriction in crystalline grains of per-
fect spherical shape surrounded by a magnetic environment of about 0.5 nm with either
crystalline or amorphous structure has been calculated. A similar method was previously
used to obtain the surface and volume anisotropy (Draaisma and de Jonge 1988) and to
deduce the surface magnetostriction and the volume magnetostriction in ultrathin films
(Szumiata et a1. 1993), and nanoparticles (Zuberek et a1. 1998).
The effective magnetostriction of a system consisting of highly magnetostrictive
spherical grains embedded in a non- (or low-)magnetostrictive matrix has been studied
by Herbst et a1. (1997). In this case the magnetostriction of the system can be described as
Aeff= Acr p (1.l5-1.26v-0.2 Ip 2/ 3) , (35)

1 - 1.25v
where v is the Poisson ratio for the low-magnetostriction component. This model gives
a satisfactory description of the fill factor dependence of the effective magnetostriction
observed on composites consisting of SmFe2 particles (obtained by ball milling) in an Al
or Fe matrix. See also Pinkerton et a1. (1998), who reported on the trade-off between high
magnetostriction and desirable mechanical properties (hardness, density). For hot-pressed
SmFe2lFe, in an applied field of 1.9 T, the saturation magnetostriction varies from 100 ppm
for mechanically robust high-density material, up to 900 ppm for low-density material. In
an attempt to reduce the anisotropy, Pinkerton et a1. (1998) substituted Nd for Sm in melt-
spun Smt-xNdxFe2 ribbons, which are transformed into Sml-xNdxFe2lFe composites by
(optimal) annealing. The intrinsic coercivity H ci of the melt-spun ribbons decreases from
2.0 kOe for SmFe2 to 0.5 kOe for Srno.5Ndo.5Fe2. As x increases from 0 to 0.5, A of the
composites decreases roughly linearly with x from 430 to 80 ppm.
Duenas and Carman (2000) have optimised the magnetostrictive properties of compos-
ites containing up to 50% (microscale) Terfenol-D grains in a non-metallic binder (epoxy).
During preparation, the elongated grains are oriented in a magnetic field, and are thought
to form a fiber-like structure. Such composites are durable and are easily machined or
otherwise manufactured into complex shapes, but usually their magnetostrictive response
is comparatively low. By choosing an optimal Terfenol-D volume fraction, related to the
selected non-metallic matrix, a composite can be obtained of which the magnetostrictive
response is comparable to that of Terfenol-D itself.
Nan and Weng (1999) have developed a Green function method to determine self-
consistently the effective magnetostrictive properties of composites. The authors claim
that their method, in principle, can be used to study the effects of material constants and
microstructure, such as anisotropy, particle shape and orientation relative to the applied
magnetic field.
Armstrong (2000a, 2000b) calculated the nonlinear multiaxial magnetostriction versus
applied magnetic-field curves of oriented Terfenol-D magnetostrictive particulate compos-
ites for very general conditions of magnetic field orientation, multiaxial applied stress,
particulate volume fraction, and particulate aspect ratio. The applied curing field does
preferentially align individual magnetic particles along easy magnetisation directions and
promotes the formation of particle chains parallel to the field.
Applying an optical cantilever method, Ohnuma et al. (1999) performed magnetostric-
tion studies on the (Col-xFex)-AI-O granular system. They found a composition depen-
dence of the magnetostriction which was almost the same as that of bulk Co-Fe alloys
(Bozorth 1951), although somewhat smaller (see fig. 71). In fact, zero magnetostriction
was found for as-deposited Fe-AI-O and (Coo.94Feo.06)-AI-O films, and, after annealing
100
80 Co-Fe
(",,(from Bozorth)
..r : ....... _.... . .~ '"
I ".. -,
.=..
'-'
60
.
I
I
I
",
" ,,
'
-e 40
! 0----
20 ""'"
·20
0.0 0.2 0.4 0.6 0.8 1.0
Fig. 71. Composition dependence of the magnetostriction, A. of (Col_xFex )-AI-O soft magnetic films. After
Ohnuma et al. (1999).
at 300°C. also for (CoO.92Feo.og)-AI-O. The latter composition exhibits optimum proper-
ties for use as core material of an inductor (see section 12). because it combines the zero
magnetostriction with high resistivity (as the other films. about 200 /LQcm) and acceptable
saturation magnetisation (induction about 1.2 T. somewhat lower than the other composi-
tions) with a large anisotropy field (which vanishes for Fe-AI-O).
The random anisotropy model describes the magnetostriction in amorphous alloys
(Szymczak and Zuberek 1982. 1983). and explains also the suppression of the local
magnetocrystalline anisotropy in nanocrystalline alloys (Herzer 1997). This model has also
been adapted to the case of granular systems (Szymczak et al. 1999). Finally. the interaction
between small metallic spheres is of the RKKY type. Its anisotropic part is thought to be
responsible for the oscillations of the magnetic anisotropy in nanoscale magnetic films
(Back et al. 1997). According to Szymczak et al. (1999). this anisotropic part should also
contribute to the magnetostriction in heterogeneous magnetic systems.
9. Huge magnetostriction in perovskites
In the preceding sections. magnetostriction has been associated mostly with the properties
of rare-earth ions and 3d itinerant-electrons. In this section. we discuss the huge
magnetostriction occurring in another kind of material. i.e. in perovskites and some related
manganese oxides exhibiting colossal magnetoresistance. Although much experimental
work has been performed on bulk samples. thin films of these ceramics can be produced by
(pulsed) laser ablation deposition. Consequently. these materials are regarded as possible
alternatives for the more conventional epitaxially grown thin films.
Among the perovskite oxides. only manganites RI-xAxMn03 and cobaltates
Rl-xAxC003 (R: trivalent rare-earth; A: divalent alkaline ion) show colossal magne-
toresistance. The most attractive feature of their magnetic behaviour is the co-existence
of metallic conductivity and ferromagnetism. Hole-doping (substituting A 2+ for R3+ )
in the parent compounds LaMn03 and LaCo03 creates mixed valence in Mn and Co
•
-- t·s
-
b
)oC
'0
U
0
.....
Ol lOll
U
'§
....,
S
<I
100 ISO 200 250 300 350 400 450 500

TEMPERATURE (K)
Fig. 72. Linear thermal expansion of Lao.6YO.07Cao.33Mn03' Inset: anomalous thermal expansion contribution
(61/ l)p. After Ibarra et al. (1995).
ions (Mn3+, Co 3+ and Mn 4 + , Co4 + ) and produces a ferromagnetic metallic state for
x ~ 0.25. Notice also that Mathieu et al. (2000) produced doping by adding monova-
lent K in Lao.96-yNdyKo.04Mn03. Doped manganites and cobaltates show not only colos-
sal magnetoresistance but also various magnetic-field induced phenomena such as mag-
netic structural, ferromagnetic metal (FMM)-paramagnetic insulator (PMI) phase transi-
tions, collapse of charge-ordered states under fields and many others. Extensive studies
have revealed that the observed features can be attributed to double-exchange (DE) in-
teractions (Zener 1951; De Gennes 1960), in competition with other mechanisms such
as antiferromagnetic (AFM) superexchange, Jahn-Teller (JT) effect, charge-orbital order-
ing, etc. A detailed (spin-orbit coupling) model was presented by Feiner and Oles (2000).
The magnetic properties of these doped perovskite manganites are reviewed by Ramirez
(1997), Ibarra and de Teresa (1998), Coey et al. (1999) and Szymczak (2000). Alejandro
et al. (2000) presented ESR-studies of the relation between the magnetic properties and
IT-distortions. Calculations performed by Nakano et al. (2000) revealed that IT distortions
work co-operatively to enhance the optical-response incoherence caused by orbital (eg )
fluctuations.
First observations of large magnetostrictive effects in manganites have been re-
ported in 1995 by Ibarra et al. (1995). The measurement was performed on doped
LaO.60Y0.lJ7Cao.33Mn03 perovskite. Colossal magnetoresistance has been observed in
this polycrystalline sample, where t::.RjR ~ 10000% just below T c (i.e. at 140 K, at
B = 6 T; Jin et al. 1995). The thermal-expansion (fig. 72) shows an extra contribu-
tion (with respect to the phonon contribution) for temperatures above Tc (= 160 K,
the temperature of the FMM-PMI transition) up to a temperature T» (~ 320 K). In this
temperature range, T C < T < T p, a large negative volume magnetostriction (of order
of 1.0 x 10- 3) was observed (see fig. 73), ascribed to the change from a charge lo-
calised PMI high-volume state to a FMM low-volume one, upon application of a mag-
netic field (or when the long-range magnetic order sets in). Similar effects were observed
a 3
J. lot
:i ..... 'y•. I7C... H MDOl
§ 0 ,...,........... ~ IS K
348.5 K
e -3
' ...<,-,"
---...;;;......
130K
~-6
Cl ~'-.
......--..~
"'
~-
~ ·9
200K
~'12 ................. _-- ....- ....---.,.

~
CS 170K
> -IS
0 5 10 IS
APPUED MAGNETIC FIElD H, (Teala)
Fig. 73. Volume magnetostriction isotherms of Lao.6YO.07Cao.33Mn03 at selected temperatures. After Ibarra et
.
aI. (1995) .
,--..,.--,.--,..-..,.--,.--.,
~
,......, ~
l"l
~
-
b :it
!
s .
.
.
. '.
<1 0 SO 100
T(K)
'
.-,.. , ....'
.'
----_ .. -. '
o 100 200 300 400 500 600
T(K)
Fig. 74. Linear !hennal expansion of Gdo.5Sro.sMn03 in zero field and under applied fields of 6 T and 12 T.
The dashed curve represents a fit of the high-temperature linear thermal expansion using a Griineisen law and a
Debye temperature eD = 500 K. After Garcia-Landa et aI. (1998a. 1998b).
in Lao.62Tbo.o5Ca0.35Mn03 (De Teresa et al. 1996). Wang et al. (1998) ascribe the shift
of the transition temperature upon applying a magnetic field, observed in La2/3Call3Mn03
and (Ndo.6ThO.4hj3SrII3Mn03, to magnetostrictive effects. Garcfa-Landa et al. (1998a,
1998b) studied the oxygen-isotope effect on the field-induced I-M transition in
Pr2l3Ca1l3Mn03,and showed that the heavier isotope favours the insulating state. Hayashi
et al. (200 1) observed the metamagnetic transition to the FMM state in pulsed fields up
to 45 T in Ndo.45Sm0.55Mn03. Two different mechanism responsible for magnetostric-
tion can be clarified: (i) in the PMI phase at T > Tc, the magnetostriction is isotropic
0"11 = A.d and gives rise to a volume distortion. This behaviour is related to the quenching
of the charge localisation under the application of a magnetic field. (ii) In the FMM phase,
20
0
-20
---
.s-
-40
'f
<:
-60
' -'
-80
-100
-120
-140
107
1()6
lOS
---eu 10"
c
'-' UP
Q.
(b)
IOZ
----T=80K
10 1 --T=60K
-T=10K
10°
0 2 4 6 8 10 12
J.1oH (T)
160
10K
140
.!!---
(C)
120
60K
E 100
s SO SOX
~ 60 100
40
200K
20
2 4 6 8 10 12 14
J.l.H (T)
Fig. 7S. MagnetosJriction(a), magnetoresistance (b) and magnetisation (c) isotherms for G<1o.5 SrO.5 Mn03. After
Garda-Landa et aI. (1998a. 1998b).
at T < Tc. the magnetostriction is anisotropic (AI = All - 1..1. '" 10-4) and typical in value
and shape to that of a ferromagnetic 3d metal; its magnetovolume effect is negligible.
The existence of Tv is also observed in Gdo.sSro.sMn03 (Garda-Landa et aI. 1998a.
1998b). see fig. 74. For this manganite, however. no FMM-PMI transition is observed.
Instead. a gradual enhancement of the charge localisation (CL) with lattice distortion
has been proposed as the mechanism responsible for the increase in the resistivity with
decreasing temperature. Irreversibility's and sharp anomalies in the magnetostriction,
magnetisation and magnetoresistance isotherms take place at low temperatures (T <
90 K) (see fig. 75(a---<:». which have been attributed to the crossover from the CL to an
inhomogeneous charge-ordered (CO) state. For temperatures lower than 42 K. the CO state
was found to coexist with a cluster glass (CG) state.
-
cg
b
~~\1'1"-~-1Iliiii~~:::::::~=240 220 K
K
200 K
-.,. -100
)(
.... ·150 180 K
~ ·200
~--160K
.250~d-~b).~:;;:;;;;~iiiiiiiiiiiiiiiii
o 2 3 4 5
Magnetic field (T)
Fig. 76. Magnetostriction isotherms for (Nd 1_ y Srn , )O.5Sr0.5 Mn03 (Y = 0.938). After Kuwahara et aI. (1996) .
•18 r-- - - - - --,

-18
-14
.:1)
s>
a
-e-'
-20 «
---
-I
·10
~
Smcontent
Fig. 77. Composition dependence of magnetostriction and magnetoresistance for (Lal-xSmx)zI3SrI/3Mn03'
After Cao et al. (1999).
Magnetostriction measurements have also been interpreted as proof for the existence of
magnetic polarons above T c in La213Srl/3Mn03 perovskites (De Teresa et al. 1997). See
below. however. for an alternate interpretation. as discussed by Demin et al. (1997) and
others.
In a (Ndl-ySmy)o.sSro.sMn03 (y = 0.938) single crystal. magnetostriction shows a
clear hysteresis and abrupt change in applied magnetic fields (fig. 76). These phenomena
were described as a field-induced first-order insulator to metal phase transition. which
accompanies a metamagnetic (from AFI to FMM) transition (Kuwahara et al. 1996).
A large linear (Joule) magnetostriction with a value up to -180 X 10-6 was observed for
bulk polycrystalline (Lal-xSmxhj3SrII3Mn03 (x = 0.33) at T = 77 K (Cao et al. 1999).
Joule magnetostriction and magnetoresistance show a similar concentration dependence
(see fig. 77).
A somewhat different picture is presented by Demin et al. (1997. 1998) and Koroleva and
Demin (1999). on the basis of their work on Lal-xSrxMn03 and also by Abramovichet al.
30
Lao.oSr .1MnO
'J'II1 .1[
/"
20
j
V
./
III[
II.
o~
<: r-,
·10
-,
/
~ lOO~
I iIO I[
·20
o 5 20 25
Fig. 78. Magnetostriction isotherms for Lao. 9SrO.1 Mn03' After Popov et aI. (1998).
(2000), on the basis oftheir work on Smo.ssSro.4sMn03' According to these authors these
systems should be treated as 'magnetic two-phase states', i.e., in this case, ferromagnetic
'clusters' embedded in a antiferromagnetic semiconductor. The structural phase transition
from the orthorhombic semiconducting phase to the metallic rhombohedral phase is then
caused by (or accompanied by) a transition to a conducting mainly ferromagnetic two-
phase state (either AF clusters in a conducting FM matrix, or percolation and tunnelling
between the increased FM clusters, still in the AF matrix). Maignan et aI. (2001) ascribe the
possibility to form a similar two-phase structure in CaMn l-xRux03 perovskites to specific
relationships between Ru and Mn ions. Respaud et aI. (200 I) determined B vs T magnetic
phase diagrams of electron-doped Sml-xCaxMn03 in fields up to 50 T. Introducing Sm
leads to increasing FM correlations. For x < 0.8 abrupt metamagnetic transitions were
observed, whereas around 0.85 phase separation was found.
Popov et aI. (1998) studied magnetostriction and field-induced structural phase transi-
tions in a series of Lal-xSrxMn03 (x = 0,0.05,0.1,0.175) perovskite single crystals
(twins), in pulsed magnetic fields up to 23 T. Anomalies in the All (8) curves were ob-
served at 20 T for LaMn03. These were associated with a spin-reorientation AyFI: .... AI:Fy
when the magnetic field B is applied along the b-axis (AyFI: indicates an antiferromagnetic
structure with moments along the b-direction in combination with a small ferromagnetic
canted moment in the c-direction; the proposed transition can - almost - be regarded
as an ordinary spin-flop transition). For Lao.9Sro.IMn03 (Tc ~ 170 K), the longitudinal
magnetostriction has no anomalies at low temperatures (T < 130 K), while near Tc: the
magnetostriction increases rapidly up to one order of magnitude and even changes in sign
(see fig. 78). This complicated behaviour was suggested to be associated with a structural
phase transition related to a polaron ordering process. A strong hysteresis of the magne-
tostriction was observed for x = 0.175 (fig. 79). Because of these phenomena accompa-
nying the structural transition, the initial state of the crystal is not re-established after the
magnetic-field pulse.
1~,B25S O,175M% 0 3
20
I'-- ~
-- -
t>
...1 41(
./
->
10 - / 111 L
/
5
/ / /
/ V
1511 I(
(
o
o 5 10 15
Fig. 79. Magnetostriction isotherms for Lao.825SrO.175 Mn03. After Popov et aI. (1998).
1.5
"
5r=0.11
...
-
(a)
= 1.0
H=O
S
0.5
0.0
a 50 100 150 200 250 300
Temperature (K)
1.5 (b)
Sr = 0.11 {
~ 1.0 f
s 0.5
~o-"
0
I
: p'o-o-"-o-O~
0.0 ~ ,-
0.0 0.1 0.2 0.3 0.4 0.5
M 2 (Am 2/kg)2
Fig. 80. Plot of w(T) (a) and w(M2) (b) for Lao.89SrO.11 Mn03. After Dabrowski et aI. (2000).
Kadomtseva et al. (2000) measured thermal expansion and longitudinal and transverse
magnetostriction in pulsed magnetic fields up to 25 Tin Lal-xSrxMn03 single crystals
(x = 0.1, 0.125 and 0.15). The results were ascribed to a suppression of the O' phase and
field-induced transitions to a new orbital-ordered ferromagnetic state.
(b) La2-zxSr'+2xM~ x=
0.36
0.4
0.45
o 100 200 o 1 200

Temperature (K) Temperature (K)
Fig. 81. Temperature dependence of the striction along (a) the ab-plane and (b) the c-axis in the absence of
magnetic fields for La2_2xSf(+2xMn207 (0.3 ~ x ~ 0.45) crystals. Arrows indicate the magnetic transition
temperature. After Kimura et al. (1998).
Mukhin et al. (2000) found that increasing Sr doping in Lal-xSrxMn03 does

suppress the (quasi- )ferromagnetic resonance frequency, whereas the (quasi- )AF resonance
frequency is only slightly decreased (20%). This behaviour corresponds to a canted
magnetic structure and its evolution with increasing x.
Dabrowski et at. (2000) measured the magnetostriction (and thermal expansion in fields),
the magnetisation and the resistivity of Lal- xSrxMn03 perovskite samples (x = O.ll,
0.13 and 0.165), which were also used in neutron diffraction studies (Dabrowski et al.
1999). Large striction effects were observed at the ferromagnetic transition. This indicates
coupling of the local spin moments and charge carriers to the crystal lattice. Magnetic
fields suppress coherent Jahn-Teller (IT) orbital ordering near x = 0.13 and remove
incoherent IT orbital ordering near x = 0.165. The observed strong spontaneous volume
magnetostriction was associated with the square of the magnetisation w(T) '" M 2(T) (see
fig. 80). The authors claim to have derived, in this way, a correct description of the intricate
phase transitions and spin reorientation in the framework of the localised spin model.
Eto et al. (200 I) studied the effect of hydrostatic pressure on the magnetostriction and
the magnetisation of a polycrystalline Euo.58Sro.42Mn03 sample. At 6 K and ambient
pressure, the estimated magnetostriction of about 400 ppm falls down in increasing fields
s: x-o.3
---
<=
' -'
<=
...
'-'
X-O.4
.J
;;:...
:c
~
J
<I
"-s
<=
' -'
--J.
;;:...
:c
J<I
----
<=
i
Q.
;;:...
:I:
~
o 246 o 246 8
~oH (T) JIoH (T)
Fig. 82. Field dependence of the in-plane magnetostriction (6Lab/Lab(0)1 (upper panel), the inter-plane (or
c-axis) magnetostriction (6LcI Lc<O)] (middle panel), and the in-plane magnetoresistance (Pab/Pab(O)] (lower
panel), at several temperatures for La2-2., Sri +2>:Mn207, (aHc): x = 0.3 and (dHf): x = 0.4. After Kimura et
al. (1998).
from I T to 2.4 T, i.e. in the 'antiferromagnetic insulator' (AFI) region. The field of 2.4 T
corresponds to the AFI-FMM (insulator-metal) transition as signalled by the observed
CMR. With increasing pressure, the magnetostriction becomes smaller and the metal-
insulator transition occurs at lower fields. In decreasing fields (from 5 T down to zero
field), no transitions were observed: the (partial) FMM state apparently remains. In fact,
at intermediate pressures, the magnetostriction measured in increasing fields becomes
negative with respect to the values observed in decreasing fields. At pressures above
1.15 GPa, the magnetostriction almost disappears, indicating that then EUO.58 Sr0.42Mn03
behaves as a ferromagnetic metal (FMM state).
The 3D perovskites can be regarded as the limit for n ~ 00 of the (doped) layered
manganese oxides with formula (RI-yAv)n+IMnn03n+1 [R: rare earth, A: divalent
cation]. Colossal magnetoresistance has been found in some highly anisotropic, almost
two-dimensional, bilayered (n = 2) members, based on (La, Sr), (La, Ca), (Nd, Sr) or (Sm,
Sr), see e.g. references in Szymczak (2000) or Garcia-Landa et al. (2001). These results
triggered further research on magnetostrictive effects. Giant magnetostriction (GMS, up
to A ....., 0.05%) has been reported for bilayered (n = 2) La2-zxSrl+zxMnz07 crystals,
which exhibit huge magnetostrictive effects (Kimura et aI. 1998). This system shows a
(a)
+
Mn06 octahedron
f=l=3z2-,2~
x2-f-<Cl ~3Z2_~
eg x2-f~ EF
~
EF _
=
=
e
,band
,= --
xy, yz , zx e"band
XV, yz, zx
~11 2g
(b) doping level
•
.
•
..
• 'maonetic
moments
x-0.4 x-O.4S
So [AJ 3.860(2) 3.876(2) 3.878(1)

eo [AI 20.380(2) 20.140(2) 20.053(2)
Mn-0(1) [AI 1.98 1.95 1.94
Mn-O(2) [AI 2.06 2.00 1.97
Mn-O(3) [AI 1.93 1.94 1.94
Fig. 83. (a) Schematic electronic structure of a Mn3+ ion in a Mn06 octahedron with IT distortion. The in-plane
eg band in the layered manganite shows a different band dispersion and bandwidth depending on the respective
orbital states. (b) Doping-level dependence of lattice distortion at room temperature in La2-2x Srl+2x Mn207.
Thick arrows on the right hand of respective crystal structures indicate the spin structures within a bilayer unit at
low temperatures. After Kimura et aI. (1998).
large spontaneous distortion at T c (fig. 81) as well as a highly anisotropic field-induced

striction with respect to the crystal axes (fig. 82). The magnetoelastic behaviour does vary
systematically with the doping level (x) and may be attributed to the field-induced change
in the orbital-state occupancy in the two-dimensional band. The most striking result is
the difference in sign between the magnetostriction of the x = 0.3 sample and that of the
x = 0.4 sample (see fig. 82). By applying magnetic fields in the ab-plane, the ab-plane
=
expands but the c-axis shrinks for x 0.3. Just the opposite is observed for x = 0.4. To
understand the origin of these magnetotransport and magnetoelastic properties, the orbital
degrees of freedom of the eg-like conduction electrons of Mn 2+ were taken into account.
The electronic structure of Mn3+ ions in Mn06 octahedron with IT distortion is sketched in
fig. 83a. It is clearly seen from this figure that an expansion of the c-axis stabilises the 3z2 -
r 2 orbital state. The (doped) e g electrons, however, prefer to occupy the x 2 _y 2 orbital state
when the c-pararneter is diminished. Doping-level dependence of lattice distortion at room
800x10" r----------------,
-400 '--''--'-...L---'---'--L-~_'_..L_.L_L_l'__'___L~~
o 2 4 6 8 10 12 14 16
lloH (T)
Fig. 84. Paral1el and perpendicular magnetostriction isotherms of Lao.5SrO.5Co03 at selected temperatures.
After Ibarra et al. (\998).
temperature in La2-2xSrl+2xMn207 crystals is presented in fig. 83b. The lattice parameter

of the a (b) axis slightly increases with increasing .r, whereas that of the c axis decreases
more rapidly. Since the orbital character is strongly correlated with lattice deformations,
the observed structural distortions, induced by changing temperature, magnetic field and
doping level, reflect sensitively changes in the orbital state. In the case of the low-doped
samples (x ~ 0.36), the cooling- or field-induced distortion appears to stabilise the x 2 _
y2 orbital state. By contrast, the lattice distortion toward the FM state (or by applying
magnetic field) has been understood in terms of the stabilisation of the 3z 2_r2 orbital state.
In a study of a series of perovskites R(Co,Mn)03 and R(Mn,Ni)03 (R = Eu, Gd, Tb, Dy,
Y), Troyanchuk et al. (1997) found large negative magnetostrictive effects of the order of
10- 4 in Eu(Coo.sMnO.S)03 at 4.2 K. The magnetostriction was not saturated in the highest
available field of 12 T. For Th(Coo.sMno.s)03, the magnetostrictive effects were somewhat
smaller. Moreover, at 5 T a change of sign was observed, ascribed to the metamagnetic
transition.
The magnetostrictive properties of Lal-xSrxCo03 cobaltates were studied by Ibarra et
al. (1998). It was found that the magnetostriction in the compounds with x = 0.0 and
x = 0.08 is negligible. Large magnetostrictive effects were observed for x = 0.3 and
x = 0.5. Their behaviour, however, is different from that of manganites. The parallel
and perpendicular magnetostriction isotherms are presented in fig. 84 for Lao.sSrO.SCo03.
Since All and AJ.. are of opposite sign and display large values, a huge anisotropic
magnetostriction is obtained: At = All - Al., is as large as 1 x 10-3 (fig. 85). The maximum
volume magnetostriction (w = All + Al.) is reached near Tc ::::: (250 K), with a value of
about -140 x 10-6 at B = 14.2 T, which is one order of magnitude lower than found in
the manganites. Such a huge anisotropic magnetostriction cannot be explained on the basis
of the usual spin-orbit coupling mechanism. Moreover, this finding suggests a different
nature of the magnetovolume effect in cobaltates compared to manganites. Indeed, it was
proposed that the magnetostriction of Lal-xSrxCo03 has its origin in orbital instability of
C0 3+ ions under the influence of a magnetic field, giving rise to a transition from a non-
degenerate low-spin (t2g 6 , S = 0) state to an orbital degenerated intermediate-spin (lzg se g,
2500
<a) lSK
2000 La•.,Sr•. l CoO]
1500
....
«-
Cl 1000
SOO
0
1200
<b) lSK
1000 La•. 5 Sr•. 5 CoOl
800 lOOK
....
«- 600
Cl
400
200
0
0 S 10 1S
J10H (T)
Fig. 85. Anisotropic magnetostriction (At) isotherms for Lao.7SrO.3Co03 (a) and Lao.5SrO.5Co03 (b) at selected
temperatures. After Ibarra et aI. <1998).
S = 1) state. In this configuration. the two-fold degenerate eg level of intermediate Co3+

splits into two singlets (L = 0). and the triplet tZg into a singlet and a doublet (L = 1). Due
to the degeneracy of the doublet level with nonzero angular momentum, a strong intra-
atomic spin-orbit coupling is created which couples to the lattice strain to give rise to a
large anisotropic magnetostriction.
10. Potential applications of magnetostrictive materials
Technical aspects and potential applications of magnetostrictive materials have been

presented by Du Tremolet de Lacheisserie (1993). Different kinds of magnetostrictive
devices based on Terfenol-D were reviewed by Houqing et al. (1997), Claeyssen et al.
(1997) and Ludwig and Quandt (2000). Marin and Hernando (2000) present a number of
applications using. on the one hand. highly magnetostrictive amorphous materials (e.g.
FeSiBCuNb wires), and, on the other hand, zero-magnetostrictive amorphous, highly
inductive materials, such as (Feo.06Coo.94hz.sSil2.sBls. According to Osaka (2000), zero
magnetostriction is also a prerequisite for electrodeposited soft magnetic films to be used
for magnetic recording heads 'in the next century'.
It is also interesting to point to the so-called 'gyromagnetic' effect, observed in Fe-Si-B
amorphous wires with a particular magnetic-domain structure (Chiriac et al. 2000b).
A large growing interest is manifest today for physical micro-systems of reduced
dimensions. typically between 10 and 103 JLm. Such systems may satisfy the need to
perform functions which are not fulfilled by existing electronic circuits, i.e. sensing
functions (micro-sensors) and functions of interacting with the environment (micro-
actuators). In the cases where a simple motion is to be obtained, magnetostrictive
amorphous R-T thin films, which combine several specific properties, are very promising.
The working principle of the magnetostrictive thin-film devices is based on the bending
transducer which consists at least of a film-substrate compound, where the substrate is
non-magnetostrictive. Upon magnetisation the magnetostriction in the film causes the
compound to bend, similar to the bending of a bimetallic strip. The advantages of
magnetostrictive devices with respect to their piezo-electric competitors are the larger
deformations, higher forces and energy densities, lower sound velocity and Young's
modulus, and low operating voltage. Moreover, direct electric contacts can be avoided. The
disadvantage is the coil, which is difficult to make small because of the field requirements.
Developing films with giant magnetostriction at low fields is necessary to solve these
problems. In addition, as magnetostrictive devices using thin films are very small, the
price of material is not a problem. So, such MEMS could find large scale applications, for
instance in electronics, optics, medicine, automobile industry, geophysical explorations,
and ocean environmental protection as well. At present, some devices are already used for
specific applications. We present here some typical examples, such as a micromechanical-
switch, a micro-motor and a micropump, demonstrating the above-mentioned advantages
of magnetostriction, especially for the fact that moving parts are wireless.
The simplest motion which can be thought of is realised by a bimorph bending (as
schematised in fig. 4) as a mechanical switch. In this case, although Sm-T films exhibit less
pronounced magnetostriction compared to Tb-T ones, the combination of a negative- with a
positive-magnetostriction film allows the fabrication of magnetostrictive bimorphs which
enhance the total deflection, and reduce the initial curvature of cantilevers (fig. 86a, see
Honda et al. 1994). A 3-mm long cantilever actuator is found to exhibit a large deflection
of above 100 JLm in a magnetic field as low as 0.03 T. With this cantilever, a deflection
of more than 500 JLm at resonant frequency in an alternating field of 0.03 T has been
reached.
One of the main drawbacks of the magnetostrictive actuators is their thermal drift. For
bulk Terfenol-D actuators, the thermal expansion (10- 5 K- 1) develops strains comparable
to the magnetostrictive ones for t1T = 150 K. For a simple rectangular bimorph cantilever
as illustrated in fig. 86a, the strains due to thermal expansion and to the magnetoelastic
coupling are comparable for only t1T = 75 K (Du Tremolet de Lacheisserie et al. 1998).
A torsion based, thermal-drift free microactuator was invented by Betz (1996, 1997). It
is basically a unimorph structure composed of one magnetostrictive film deposited on
a passive substrate. The special feature is a square shape maintained by hinges at three
comers (figs 87a, b). The useful displacement due to magnetostriction is obtained at the
fourth free comer, without thermal displacement. The different deformed shapes are due to
the anisotropy of magnetostriction strains and the isotropy of thermal strains.
Various types of the so-called magnetostrictive "inchworm" type of motor have been
proposed and built. A two-leg travelling machine using a magnetostrictive bimorph
actuator with 7.5 JLm-thick polyimide is shown in fig. 86b (Honda et al. 1994; Arai and
Honda 1996). In an alternating magnetic field, it can travel in one direction. The maximum
speed of approximately 5 mmls was obtained around the mechanical resonant frequency
(a)
Tb-Fe(1 ,urn) Polyirnide

(7.5,urn)
(b)
Sm-Fe (1 ,urn)
Fig. 86. (a) A side view of the cantilever actuator fabricated by combining TbFe and SmFe films. After Honda et
al, (1994). (b) Two-leg linear magnetostrictive micromotor. After Honda et al, (1994).
(a)
(b)
Fig. 87. Drift free microactuator: (a) thermal deformation and (b) magnetostriction deformation. After Betz
(1997).
of 200 Hz. Similarly, a many-leg linear-motor was also fabricated using a micromachined
Si(llO) substrate (10 /Lm) and TbFe films, see fig. 88 (Halstrup et al. 1996; Claeyssen
et al. 1997). The 4 /Lm-thick TbFe films were deposited on both sides of the substrate.
Silicon plate
?"~f,s1 {
• Leg Magnetostrictive thin film

}J2 }J2
Fig. 88. Many-leg linear magnetostrictive micromotor. After Claeyssen et al. (1997).
Applying a magnetic excitation field of 10 mT at a frequency of approximately 775 Hz and

a magnetic bias field of 10 m'T, this motor can be operated at a speed of 3 mm/s. A rotating
magnetostrictive ultrasonic micromotor, however. consists of a free Ti rotor (20 mm
diameter. thickness of 100 J-Lm. three 300 J-Lm-thick teeth) on which a magnetostrictive
film of 4.6 J-Lm-thick in three sectors is deposited. An ac magnetic field of 20 mT and a
bias magnetic field of 40 mT are applied transversally to the film. Operating at a frequency
of 2.86 klfz, the propulsion mechanism of vibrating teeth on a friction layer leads to a
rotational speed of 0.5 rls (Claeyssen et al. 1997).
Gibbs et al. (1997) describe a MEMS pressure sensor based on the magnetoelastic
properties of an amorphous Fe-Si-B-C coating (derived from METGLASS2605SC) on
GaAs substrate.
The world-wide first magnetostrictive thin film micropump prototype was made
of four laser micro-machined Si(lOO) wafers in combination with a bimorphous Tb-
DyFe(l5 J-Lm)/Si(l (0)(50 J-Lm)/SmFe(l5 J-Lm) membrane and cantilever-type passive
valves (fig. 89) (Quandt and Seemann 1996; Quandt and Ludwig 1997; Quandt et al.
1997b). The radial magnetic field circuit is directly placed on the membrane to permit
a good penetration by the magnetic field. The micropump is operated using an oscillating
rectangle pulse for the membrane actuation. At the frequency of 2 Hz a maximum yield of
approximately 290 J-LVmin of methanol or an outlet pressure of 4.9 mbar can be reached.
Later. Quandt and Ludwig (2000) proposed a more simple construction based on Si mem-
branes coated with giant magnetostrictive TbFeIFeCo multilayers.
Optical microactuators like a micromirror for scanning applications have been proposed
by Orsier et al. (1996). A two-dimensional bimorph (Si + magnetostrictive film) is driven
remotely by two differently oriented magnetic fields working at different frequencies
in order to obtain the bending and torsional vibrations due to the magnetostrictive
strain.
Berger et al. (2000) proposed to use magnetostrictive thin films in scanning probe
microscopy. This idea allows overcoming misinterpretation of MFM images due to the
tip magnetisation by using non-magnetic tips.
(Co.Fe)-AI-O granular films were used in preparing the core (dimension of 2 mm x
2 J-Lm x 300 J-Lm) of a high-frequency spiral shaped inductor. The best properties were
obtained with (Coo.92Feo.o8)-AI-OISi02 multilayers, which have magnetostriction almost
TbOyFe film (20 11m)

51 (RI1 0 nvn x 50 11m)
SmFe 111m (20 11m)
Si (100) (180. 240 11m).

by laser micropallerning
Fig. 89. Schematic cross-section of the magnetosttictive membrane type micropump. After Quandt (1997).
zero after annealing as the core material. A maximum quality factor Qrnax = 25 at a
frequency of 300 MHz was observed (Ohnuma et aL 1999). A coil using a granular film
with >.. = 10 x 10-6 had Qrnax = 8 at a frequency of 120 MHz.
Combination of magnetostrictive and piezoelectric materials have also been suggested
(Arai et at. 1995). Using a piezoelectric substrate (or thin film) on which a magnetostrictive
film is deposited, one can operate in two different modes: either the magnetostrictive
film can be used as an actuator leading to a sensor signal in the piezoelectric substrate,
or the function of both layers could be exchanged using the inverse effects in both
materials.
A stress-operated memory device consisting of an ellipsoidal magnetic particle array
and an electrostrictive grid is proposed by Novosad et al, (2000). In this device, the
magnetic state of the particle can be controlled by the magnetostriction effect. The design
is sketched in fig. 90a. In the writing process, the driving voltages are simultaneously
applied to two pairs of the selected contacts (e.g. ±UI and ±U2 in the illustration)
resulting in an electric field with a vector sum of two electric fields. Varying the intensity
and the polarity of the applied voltage (fig. 90b) can effectively rotate the direction and
the amplitude of the electric field. Consequently, the rotatable stress can be generated
at the selected intersection in the piezoelectric grid, which initiates the magnetisation
reversal of the magnetic particle (e.g. the magnetisation of particle B is switched, whereas
the final magnetic states of the particles A and C are not affected). For the design of
this kind of stress-operated memory device, ferroelectic materials such as lead zirconat
titanate (PZT), barium strontium titanate (BST) and lead lanthanum zirconate titanate
(PLZT) would be suitable. The magnetic particles should be magnetically soft with large
magnetostriction. In a (microscale) prototype Ni particles were applied, but Pd-Co and
the spring type multilayers (MSMM, discussed in section 5.2) were also mentioned as
promising materials.
190 N.H. Dueand P.E. BROMMER
(a)
(b)
Fig. 90. (a) Schematic design of a stress-operated memory device. (b) The magnetic states of particles A, B and
e (see (a» as a function of a driving electric field. The magnetisation of the particle B is switched, whereas the
final magnetic states of the particles A and e are not affected. After Novosad et al. (2000).
11. Summary and concluding remarks
Recent results for nanoscale heterogeneous magnetic systems have been reviewed. For
applications, both zero-magnetostriction (soft-magnetic) materials and materials exhibiting
giant magnetostrictive effects (for actuators) are of interest. Reliable magnetostrictive
devices (MEMS) have been designed on the basis of amorphous Terfenol and Terfenol-D
(TbDyFe2) alloys, although the magnetostriction of these amorphous alloys has been found
to be one order of magnitude lower than that of their traditional, well-known crystalline
counterparts. Magnetic investigations have shown that the GMS-properties of amorphous
R-Fe alloys suffer from the sperimagnetic character of the Fe and R subsystems.
Fortunately, an alternative solution has been found by preparing nanocrystalline R-Fe
alloys in which the magnetic anisotropy is reduced, while the exchange energy (ordering
temperatures) and the GMS remain satisfactorily high. By optimising the annealing
temperature and time, i.e. the nanocrystallisation, the magnetostriction value can be
doubled. In particular, a giant parallel magnetostriction (An) of 800 x 10-6 has been
achieved in a (Tbo.7DYO.3)O.3FeO.7 film with grain sizes around 10 nm. This size, however,
is rather close to the exchange length in R-T alloys, so the coercive field is increased
(less suitable for MEMS, where fields of a few mT are preferred). In addition, annealing
promotes the segregation of other Fe-rich phases, which - on the one hand - have
low magnetostriction, but - on the other hand - may improve the magnetostrictive
softness. Good results are obtained for nanocrystaIIine multi layers in which the crystallite
growth is delimited by the layer thickness. In amorphous thin films, however, it is strongly
preferable to replace iron by cobalt. Near the RC02 composition, the amorphous alloys
present higher ordering temperatures and higher magnetostriction than the equivalent iron-
based alloys. In fact, the magnetostriction has been optimised in a series of thin films
of the type a-(Tb,Dy)(Fe,Co)n. These materials showed a high, record, magnetoelasticity
of p.2 = -63.5 MPa and AY. 2 = 1020 x 10-6 , which is almost fully developed at low
fields. GMS obtained in this series of alloys has been explained in terms of an increase in
the ferromagnetic coupling strength within the (Fe.Co) subsystem, and the effect of field
annealing in inducing a well-defined uniaxial anisotropy. StilI better performances were
obtained on spring type Rtf MSMM, where the saturation field of the magnetostrictive,
amorphous Tb-FeCo is lowered by means of exchange coupling with the soft-magnetic
Fe-Co layers. In addition, the increase of the coupling exchange field between the layers
does close the cone angle in the sperimagnetic Tb-FeCo structure, thus increasing its
magnetostriction. In this case, layers must be sufficiently thin, in order that a noticeable
volume of the R-T layer may be submitted to the large molecular field. Deposition under
an applied field and field annealing are rather effective in creating a well-defined uniaxial
anisotropy and, then, in increasing the magnetostriction in the direction of interest. In view
of applications, some interesting values of the magnetostriction and of the magnetostrictive
susceptibility are summarised in table 2.
Apart from technical considerations for applications, we stress that studies on magnetoe-
lastic effects in thin films also are of fundamental interest. At the surface of any alloy, the
symmetry is broken, for instance because neighbouring atoms are missing. Thus, surface
(and interface) contributions to the magnetoelastic coupling must be taken into account.
This contribution is usually negligible in bulk materials, but this is no longer true for thin
films and multilayers where surface and interface effects on the magnetic and magnetostric-
tive properties have been experimentally evidenced. For a better understanding of the very
complex properties of these systems, however, very complex further experimental as well
as theoretical studies are needed.
Significant improvements in the field of giant magnetostriction have stimulated the
design and manufacturing of microactuators and motors (sometimes prototypes only),
taking advantage of wireless magnetic excitation, in first instance at room temperature
(or higher temperatures). For cryogenic applications, magnetostrictive actuators require
low-temperature magnetostrictive materials. In practice, single crystals of TbO.6DY0.4Zn I
(Terzinol) were used (Teter et aI. 2000). The major advantage of this material is that a
50 mT apllied field suffices to achieve a large magnetostriction of 5 x 10-3. In this context,
perovskites and rare earth superlattices are also possible candidates.
Acknowledgements
The collaboration of N.H. Due with Dr. D. Givord, Dr. K. Mackay, Dr. J. Betz and Dr. E.
Du Tremolet de Lacheisserie at the Laboratoire Louis Neel, CNRS, Grenoble (France) has
been very useful for him, not only to familiarise him with this field of research, but also
to go further into it. N.H. Due is also particularly grateful to Prof. Dr. T.D. Hien, Prof. Dr.
N.H. Luong, Dr. N.H. Chau and co-workers, who have started together with him to build
equipment for measuring thermal expansion and magnetostriction using the capacitance
method, and to develop research on magnetovolume effects and magnetostriction of the
lanthanide-transition metal intermetallics at the Cryogenic Laboratory in Hanoi since
1981. The support of the Vietnam National University, Hanoi within the project QG.99.08
has been useful to complete this work. The work was also partially supported by the
Vietnamese programme for Fundamental Research under project 420.301.
References
Abramovich, A.I., L.I. Koroleva, A.V. Michurin, Barthelemy, A., A. Fert and F. Petroff, 1999, in:
O.Y.Gorbenko and A.R. Kaul, 2000, Physica B 293, Handbook of Magnetic Materials, vol. 12, ed.
38. K.HJ. Buschow (Elsevier Science, North-Holland,
Alejandro, G., M. Tovar, A. Butera, A. Caneiro, Amsterdam) p. I.
M.T. Causa, F. Prado and R. Sanchez, 2000, Physica Batt, AJ., R.A. Buckley and H.A. Davies, 2000, Sen-
B 284-288, 1408. sors Actuators A 81, 170.
Ali, M., and R. Watts, 1999,1. Magn. Magn. Mater. Beach, R.S., 1.A. Borchers, A. Matheny, R.W Erwing,
202,85. M.B. Salamon, B. Everitt, K. Pettit, J.l. Rhyne and
Alves, F., 1.B. Desmoulins, D. Herisson, 1.F. Rialland c.a Plynn, 1993, Phys. Rev. Lett. 70, 3502.
and F. Costa, 2000, 1. Magn. Magn. Mater. 215-218, Becker, R., and W.D. Doring, 1939, Ferromagnetismus
387. (Springer, Berlin).
Andreev, A.V., 1996, in: Handbook of Magnetic Mate- Belov, K.P., O.P. Elyutin, G.I. Kataev, D. Kim,
rials, vol. 8, ed. K.HJ. Buschow (Elsevier Science, S.A. Nikitin, G.V. Pshechenkova, L.I. Solntseva,
North-Holland. Amsterdam) p. 59. G.N. Surovaya and V.P.Taratynov, 1975, Phys. Met.
Metall. 39, 50.
Arai, K.I., and T. Honda, 1996, Robotica 14,477.
Berger, R., F. Krause, A. Dietzel, l.W. Seo, J. Fom-
Arai, K.I., T. Honda, W. Sugawara and M. Takezawa,
peyrine and 1.P. Locquet, 2000, Appl. Phys. Lett.
1995, Technical Digest of the 13th Sensor Sympo-
76,616.
sium (unpublished), 477.
Betz, 1., 1996, Proc. Actuators 96, Axon, Bremen (Ger-
Areas, 1., A. Hernando, 1.M. Garcfa-Beneytez and
many), p. 283.
M. Vazquez, 1998, J. Magn. Magn. Mater. 186,283.
Betz, J., 1997, Thesis, Universite de Grenoble.
Armstrong, WD., 2000a, 1. Appl. Phys. 87, 3027. Betz, 1., K. Mackay and D. Givord, 1999, 1. Magn.
Armstrong, W.D., 2000b, Mater. Sci. Eng. A285, 13. Magn. Mater. 207,180.
Amaudas, J.I., A. del Moral, M. Ciria, GJ. Tomka, Bochi, G., O.-S. Song and R.c. 0' Handley, 1994,
C. de la Fuente, P.AJ. de Groot, R.C.C. Ward and Phys. Rev. B SO, 2043.
M.R. Wells, 1996, J. Magn. Magn. Mater. 156,421. Borchers, J.A., M.B. Salamon, R.W. Erwin, U. Rhyne,
Awano, H., O. Taniguchi, T. Katayama, F. Inoue, R.R. Du and C.P. Flynn, 1991, Phys. Rev. B 43,
A. Itoh and K. Kawanishi, 1988,1. Appl. Phys. 64, 3123.
6107. Bozorth, R.M., 1951, Ferromagnetism (Van Nostrand,
Back, C.H., W. Weber, Ch. Wursch, A. Bishof, D. Pes- New Jersey).
cia and R. Allenspach, 1997, 1. Appl. Phys. 81, Bushnell, S.E., and C. Vittoria, 1993, IEEE Trans.
5054. Magn. 29, 3379.
Baril, L., B. Gurney, D. Wilhoit and V. Speriosu, 1999, Bushnell, S.E., WB. Nowak, SA Oliver, C. Vittoria,
1. Appl. Phys. 85, 5139. 1992, Rev. Sci. Instrum. 63, 2021.
Callen. E.R .• and H.B. Callen. 1963. Phys. Rev. 129, Danh, T.M.• N.H. Duc and N.P. Thuy, 1998. J. Magn.
578. Magn. Maler. 185. 105.
Callen, E.R .• and H.B. Callen. 1965. Phys. Rev. 139. Danh, T.M.• N.H. Duc. H.N. Thanh and J. Teillet, 2000,
A455. J. Appl. Phys. 87. 7208.
Campbell. I.A., 1972. J. Phys. F 2. L47. De Gennes, 1960. Phys. Rev. 118. 141.
Cao, Q.Q .• J. Wu. K.M. Gu, S.Y. Zhang and Y.W. Du. De la Fuente. C.. A. del Moral. J.I. Arnaudas,
1999, J. Appl. Phys. 85, 4494. J. Go. R. Sarthour, R. Cowley. M.R. Wells and
Chappert, J., J.M.D. Coey, A. Lienard and J.P. Rebouil- R.C.C. Ward, 1999, J. Magn. Magn. Mater. 196,
lat. 1981, J. Phys. F 11, 2727. 140.
Chien, C.L.. 1991. J. Appl. Phys. 69, 5267. De Teresa, J.M .• J. Blasco. M.R. Ibarra, J. Garcia,
Chikazumi. S., 1964, Physics of Magnetism (Wiley. e. Marquina. P. Algarabel and A. del Moral. 1996.
New York). J. Appl. Phys. 79. 5175.
Chiriaco H.• M. Tomuta and M. Neagu, 1999. Nano-
De Teresa, J.M., M.R. Ibarra, P.A. Algarabel, C. Ritter.
struct, Mater. 12, 851.
C. Marquina, J. Blasco. J. Garcia, A. del Moral and
Chiriac, H.• M. Lozovan, M. Neagu and e. Hison,
Z. Arnold. 1997. Nature 368. 256.
2000a. J. Magn. Magn. Mater. 215. 378.
Del Moral. A., J.1. Arnaudas, M. Ciria, M.R. Wells
Chiriaco H., C.S. Marinescu and T.-A. Ovari, 2OOOb,
and R.C.C. Ward. 1996, J. Magn. Magn. Mater.
Sensors and Actuators 181. 126.
157/158.539.
Chopra, H.D .• OX Yang and P. Wilson. 2000. J. Appl.
Del Moral, A., M. Ciria, J.1. Amaudas, M.R. Wells.
Phys. 87, 5780.
Ciria, M., J.1. Arnaudas, A. del Moral, GJ. Tomka, R.C.C. Ward and e. de la Fuente. 1998. J. Phys.:
e. de la Fuente, P.A. de Groot, M.R. Wells and Condens. Matter. 10, L139.
R.C.C. Ward, 1995, Phys. Rev. Lett. 75,1635. Demin, R.V., L.1. Koroleva and A.M. Balbashov, 1997,
Ciria, M., J.1. Arnaudas, C. Dufour, V. Odemo, Phys. Lett A 231, 279.
K. Dumesnil and A. del Moral, 1998, Thin Solid Demin, R.V., L.1. Koroleva and A.M. Balbashov, 1998,
Films 317. 303. J. Magn. Magn. Mater. 177-181, 871.
Claeyssen, E, N. Lhermet, R. Le Letty and P. Bouch- Dieny, B., D. Givord, J.M. Ndjaka and J.M. Alameda,
iIIoux, 1997, J. Alloys Compo 258, 61. 1990. J. Appl. Phys. 67, 5677.
Clark, A.E., 1980, in: Handbook of Ferromagnetic Ma- Dieny, B., D. Givord and J.M. Ndjaka, 1991a, J. Magn.
terials, vol. I. ed. E.P. Wohlfarth (Elsevier Science, Magn. Maler. 93, 503.
North-Holland. Amsterdam) p. 539 Dieny, B.• V.S. Speriosu, S.S.P. Parkin. B.A. Gurney.
Clark, A.E., and H. Belson. I 972a, AlP Conf. Proc. D.R. Wilhoit and D. Mauri, 1991b, Phys. Rev. B 43,
No.5, p. 1498. 1297.
Clark. A.E.• and H. Belson, 1972b, Phys. Rev. B 5, Dime, EW.A.• and CJ.M. Denisson, 1989. J. Magn.
3642. Magn. Mater. 78.122.
Clark. A.E., and H. Belson. 1972c. IEEE Trans. Magn. Draaisma, HJ.G., and WJ.M. de Jonge, 1988, J. Appl.
MAG-8.477. Phys. 64, 3610.
Cochrane, R.W.• R. Harris and MJ. Zuckermann, 1978.
Du Tremolet de Lacheissene, E., 1993, in: Magne-
Phys. Rep. 48. I.
tostriction: Theory and Applications of Magneto-
Coehoom, R., 1990. in: Proceedings of the NATO-
elasticity (CRC Press. Boca Raton, USA).
ASI "Supermagnets, Hard Magnetic Materials", eds
Du Tremolet de Lacheisserie, E., 1995. Phys. Rev. B
GJ. Long and E Grandjean (Kluwer, Dordrecht).
51.15925.
Coey, J.M.D.• 1978, J. Appl. Phys. 49, 1646.
Coey, J.M.D.• D. Givord, A. Lienard and J.P. Rebouil- Du Tremolet de Lacheisserie, E., 1999, Magnetism
(Presses Universitaires de Grenoble).
lat. 1981, J. Phys. F 11. 2707.
Coey, J.M.D.• M. Viret and S. von Molnar. 1999, Adv. Du Tremolet de Lacheisserie, E.• and J.C. Peuzin,
Phys.48, 167. 1994. J. Magn. Magn. Maler. 136. 189.
Dabrowski. B.• X. Xiong. Z. Bukowski. R. Dybzin- Du Tremolet de Lacheisserie, E., and O. EK. McGrath.
ski. P.W. Klamut, J.E. Siewenie, C.W. Kimball, 1995, J. Magn. Magn. Mater. 147. 160.
O. Chmaissem, J.D. Jorgensen and S. Short, 1999. Du Tremolet de Lacheisserie, E., and J.C. Peuzin,
Phys. Rev. B 60, 7006. 1996. J. Magn. Magn. Maler. 152, 231 (see
Dabrowski. B.• L. Gladczuc, A. Wisniewski. A. Szew- K1okholm and Jahnes, 1996).
czyk. M. Gutowska, S. Kolesnik. C.W. Kimball and Du Tremolet de Lacheisserie. E., K. Mackay, J. Betz
H. Szymczak. 2000. J. Appl. Phys. 87, 301 I. and J.e. Peuzin, 1998. J. Alloys Compo 275, 685.
Due, N.H., 1997, in: Handbook of Physics and Chem- Eto, T., G. Oomi, E.V. Sampathkumaran, A. Sundare-
istry of the Rare Earths, vol. 24, eds K.A. Gschnei- san. M. Kosaka and Y. Uwatoko, 2001. Physica B
dner, Jr. and L. Eyring (Elsevier Science, North- 294-295, 111.
Holland. Amsterdam) p. 339. Fahnle, M., and M. Komelj, 2000, J. Magn. Magn.
Due, N.H., 2001, in: Handbook of Physics and Chem- Mater. 220. LB.
istry of the Rare Earths. vol. 33. eds K.A. Gschnei- Farber. P.• and H. Kronmiiller, 2000a, J. Magn. Magn.
doer. Jr. and L. Eyring (Elsevier Science, North- Mater. 214, 159.
Holland, Amsterdam). Farber. P.. and H. Kronmiiller, 2000b, 1. Appl. Phys.
Due, N.H., 2002, Proc. JEMS200J, Grenoble, to ap- 88,2781.
pear in 1. Magn. Magn. Mater. Feiner, L.F., and A.M. Oles, 2000, Physica B 259-261,
Due, N.H .• and D. Givord, 1996, J. Magn. Magn. 796.
Mater. 157-158, 169. Fischer, S.F.. M. Kelsch and H. Kronmiiller, 1999, J.
Due, N.H., and P.E. Brommer. 1999, in: Hand- Magn. Magn. Mater. 195, 545.
book of Magnetic Materials, vol. 12. ed. K.HJ. Forester, D.W.. C. Vittoria, J. Schelleng and P. Lubitz,
Buschow (Elsevier Science, North-Holland. Ams- 1978, J. Appl. Phys. 49, 1966.
terdam) p. 259. Franse, lJ.M., and RJ. Radwariski, 1993, in:
Due, N.H., and T. Goto, 1999, in: Handbook of Physics Handbook of Magnetic Materials, vol. 7, ed.
and Chemistry of the Rare Earths. vol. 26. eds K.HJ. Buschow (Elsevier Science. North-Holland,
K.A. Gschneidner, Jr. and L. Eyring (Elsevier Sci- Amsterdam) p. 307.
ence, North-Holland. Amsterdam) p. 171. Freeman, AJ., R. Wu, M. Kim and V.I. Gavrilenko,
Duc, N.H., K. Mackay, J. Betz and D. Givord, 1996, J. 1999,1. Magn. Magn. Mater. 203. I.
Appl. Phys. 79, 973. Fujimori, H.• 1.Y. Kim, S. Suzuki, H. Morita and
N. Kataoka, 1993,1. Magn. Magn. Mater. 124, 115.
Due, N.H .• K. Mackay, 1. Betz and D. Givord, 2000a,
Garda-Landa. B., L.M. De Teresa, M.R. Ibarra. C. Rit-
J. AppJ. Phys. 87, 834.
ter, R. Drost and M.R. Lees, 1998a, J. Appl. Phys.
Due N.H., T.M. Danh, H.N. Thanh, J. Teillet and
83,7664.
A. Lienard, 2000b, J. Phys.: Condens. Matter. 12,
Garda-Landa, B., M.R. Ibarra, L.M. De Teresa,
8283.
G. Zhao, K. Conder and H. Keller, I998b. Solid
Due, N.H., K. Mackay. J. Betz, Z. Sarkozi and
State Comm. 105,567.
D. Givord, 2000c, J. Phys.: Condens. Matter. 12,
Garda-Landa. B., C. Marquina, M. Hilbers,
7957.
M.R. Ibarra, P.A. Algarabel, A. del Moral,
Due, N.H., N.A. Tuan, D.T.N. Anh, T.M. Danh and
G. Balakrishnan, M.R. Lees and D. McK Paul,
N.P. Thuy, 2000d, Proceedings of the 8th Asian
2001 Physica B 294-295, 107.
Pacific Physics Conference, Taipei. August 7-10,
Gavigan. J.P.• D. Givord, H.S. Li and J. Voiron, 1988.
2000 (World Scientific, Singapore).
Physica B. 149, 345.
Due, N.H., T.M. Danh, N.A. Tuan and J. Teillet, 200la, Gibbs, M.R.J., 1992, Physica Scripta T45, 115.
Appl. Phys. Lett. 78, 3648. Gibbs, M.RJ., C. Sherwood, J.L. Dancaster,
Due, N.H .. F. Richomme, N.A. Tuan, D.T. Huong Gi- P.E.M. Frere and AJ. Jacobs-Cook. 1996, IEEE
ang. T. Verdier and J. Teillet, 200lb. Proc. JEMS Trans. Magn. 32,4950
200 I, to be published. Gibbs. M.RJ., R. Watts, W. Karl, A.L. Power and
Duc, N.H., T.M. Danh, N.A. Than and 1. Teillet, 200lc, R.B. Yates, 1997, Sensors Actuators A59, 229.
unpublished. Givord, D.• A.D. Santos. Y. Souche, J. Voiron and
Due, N.H., L.Q. Than, A. Fnidiki. 1. Ben Youssef, S. Wllchner. 1993. J. Magn. Magn. Mater. 121.216.
H. Le Gall and 1. Teillet, 200ld. submitted to J. Givord, D., 1. Betz, N.H. Due, K. Mackay and E.
Appl. Phys. du Tremolet de Lacheisserie, 1995, Proc. 2nd In-
Duenas, T.A., and G.P. Carman. 2000. 1. Appl. Phys. ternational Workshop on Materials Science. Hanoi,
87,4696. eds F.F. Becker, N.D. Chien. lJ.M. Franse and
Dwight, A.• and C. Kimball, 1974. Acta Crys. B 30, T.D. Hien, p. 287.
2791. Givord, 0 .. 1. Betz, K. Mackay, J.e. Toussaint, 1. Vo-
Engdahl, G., 1999, Handbook of Giant Magnetostric- iron and S. Wiichner. 1996,1. Magn. Magn. Mater.
tive Materials (Academic Press. New York). 159,71.
Erwin. R.W., J.J. Rhyne. M.B. Salamon, J.A. Borchers, Gradmann, U., 1993, in: Handbook of Magnetic Mate-
S. Sinha. R. Du, J.E. Cunningham and C.P. Flynn, rials, vol. 7. ed. K.HJ. Buschow (Elsevier Science.
1987, Phys. Rev. B 35, 6808. North-Holland, Amsterdam) p. I.
Grundy, p.1., D.G. Lord and P.1. Williams, 1994, 1. Houqing, Z., L. Jianguo, W. Xiurong, X. Yanhong and
Appl. Phys. 76, 7003. Z. Hongping, 1997, J. Alloys Compd. 258. 49.
Gubin, S.P., V.V. Kislov, v.v. Kolesov, E.S. Soldatov Hristoforou, E., H. Chiriac and M. Neagu, 1998. Sen-
and A.S. Trifonov, 2000, Nanostruct. Mater. 12, sors and Actuators A 67,49
1131. Huang. J., C. Prados, J.E. Evetts and A. Hernando,
Gutjahr-Loser, Th., D. Sander and J. Kirschner, 2000, 1995, Phys. Rev. B 51, 297.
J. Magn. Magn. Mater. 220, L1. Iannotti, V., and L. Lanotte, 1999. J. Magn. Magn.
Gutierrez, J., P. Gorria, 1.M. Barandiaran and Mater. 202. 191.
A. Garcia-Arribas, 1995, in: Nanostructured and Ibarra. M.R.•and J.M. de Teresa, 1998, J. Magn. Magn.
Nanocryst. Mater., eds M. Vazquez and A. Her- Mater. 177-181, 846.
nando (World Sci. Publ., Singapore) p. 500. Ibarra, M.R., P.A. Algarabel, C. Marquina, J. Blasco
Halstrup, B., J. Betz, K. Mackay, J.C. Peuzin and and 1. Garda, 1995, Phys. Rev. Letters 75. 3541.
N. Lhermet, 19%, in: Micro Systems Technologies Ibarra. M.R., R. Mahendiran, C. Marquina, B. Garcia-
%. eds. H. Reichl and A. Heuberger (VDE-Verlag. Landa and J. Blasco. 1998. Phys. Rev. 57. R3217.
Berlin) p. 457. Jehan, D.A.. D.F. McMorrow. R.A. Cowley,
Hansen, P., 1991, in: Handbook of Magnetic Materi- R.C.C. Ward, M.R. Wells. N. Hagmann and
als. vol. 6, ed. K.H.J. Buschow (Elsevier Science, K.N. Clausen, 1993. Phys. Rev. B 48,5594.
North-Holland, Amsterdam) p. 289. Jerems, F.. and R.D. Greenough. 1999. J. Appl. Phys.
Hansen, P.• C. Clausen, G. Much, M. Rosenkranz and 85,4500.
K. Witer. 1989, J. Appl. Phys. 66, 756. Jiang. X.• H. Xu. Ch. Jiang and Sh. Gong. 2000. 1. Al-
Hayashi. Y., T. Honda, K.1. Arai, K. Ishiyama and loys Compo311, 86.
M. Yamaguchi, 1993, IEEE Trans. Magn. 29. 3129. Jin, S., H.M. O'Bryan, T.H. Tiefel, M. McCormack and
Hayashi. T., N. Miura, K. Noda and H. Kuwahara,
W.W. Rhades, 1995. Appl. Phys. Lett. 66,382.
2001. Physica B 294-295. 115.
Kadomtseva, A.M., Yu.F. Popov. K.I. Kamilov,
Henning. J.C.M.• and J.H. den Boef, 1978, J. Appl.
G.P. Vorobev, A.A. Mukhin, V.Yu. Ivanov and
Phys. 16, 353.
A.M. Balbashov, 2000, Physica B 284-288.1410.
Herbst, J.C.M., T.W. Capehart and F.E. Pinkerton,
Kaneyoshi, 1984. Amorphous Magnetism (CRC. Boca
1997, Appl. Phys. Lett. 70, 3041.
Raton. FL).
Hernando. A.• C. Prados and C. Prieto, 1983, J. Magn.
Kikuchi. S.. T. Tanaka, S. Sugimoto, M. Okada,
Magn. Mater. 37, 169.
M. Homma and K.l. Arai, 1993, J. Magn. Soc. Jpn.
Hernando, A.• M. Vazques, J. M. Barandiaran, 1988. J.
17.267.
Phys. E 21. 1121.
Kim. J.Y., 1993, J. Appl. Phys. 74. 2701.
Hernando. A.• C. Prados and C. Prieto, 1996. 1. Magn.
Magn. Mater. 157-158,501 Kimura, T.• Y. Tomioka, A. Asarnitsu and Y. Tokura,
Hernando, A., C. Gomez-Polo, M. EI Ghannarni and 1998, Phys. Rev. Letters. 81. 5920.
A. Garcia Escorial, 1997, J. Magn. Magn. Mater. Klokholm, E., 1976. IEEE Trans. Magn. 12.819.
173,275. Klokholm, E.• 1977. IBM Tech. Disci. Bull. 19.4030.
Herzer, G.• 1990, IEEE Trans. Mag. 26. 1397. Klokholm, E.• and C.V. Jahnes, 19%, J. Magn. Magn.
Herzer. Goo 1991, in: Proc. Int. Symp. on 3d Transition- Mater. 152.227.
Demi Metal Thin films, Magnetism and Processing Koksharov, Yu.A., S.P. Gubin, l.D. Kosobudsky,
(Japan Soc. for the Promotion of Science, Sendai, M. Beltran. Y. Khodorkovsky and A.M. Tishin,
Japan) p. 307. 2000,1. Appl. Phys. 88, 1587.
Herzer, G., 1993, Phys. Scr. T 49.307. Konishi, S.• S. Sugatani and Y. Sakurai, 1%9, IEEE
Herzer, G., 1997, in: Handbook of Magnetic Materi- Trans.Magn.~(;·5. 14.
als. vol. 10, ed. K.H.J. Buschow (Elsevier Science, Koroleva, L.I., and R.V. Demin, 1999, Physica B 259,
North-Holland. Amsterdam) p. 415. 816.
Hofmann. B., T. Reninger and H. Kronmuller, 1992, Kraus, L.. 1989.1. Phys.: Sci. Instrum, F 22.943.
Phys. Sat. Sol. (a) 134,247. Kraus, L., and J. Schneidner, 1977. Phys. Stat. Sol. 39&,
Holzer. D., I. Perez de Albeniz, R. Grossinger and K161.
H. Sassik, 1999, J. Magn. Magn. Mater. 203, 82. Kuwahara, H., Y. Tomioka, Y. Morotomo,
Honda, T., Y. Hayashi. K.I. Arai, K. Ishiyama and A. Asamitsu, M. Kasal, R. Kumai and Y. Tokura,
M. Yamaguchi. 1993. IEEE Trans. Mag. 29. 3126. 19%. Science 272, 80.
Honda, T., K.l. Arai and M. Yamaguchi, 1994, J. Appl. Lachovicz, H.K., and H. Szymczak. 1984. J. Magn.
Phys, 76, 6994. Magn. Mater. 41. 327.
Lafford, A., R. Zuberek and M.RJ. Gibbs, 1995. J. Ohnuma, S., N. Kobayashi, T. Masurnoto, S. Mitani
Magn. Magn. Mater. 140-144,577. and H. Fujirnori, 1999, J. Appl. Phys. 85, 4574.
Lee, C.H., H. He, FJ. Larnelas, W. Vavra, e. Uher and O'Handley, R.C., and S.W. Sun, 1992,1. Magn. Magn.
R. Clarke, 1990, Phys. Rev. B 42,1066. Mater. 104-107, 1717.
Le Gall, H., N. Vukadinovic, O. Navaro and J. Ben O'Handley, R.C., O.-S. Song and e.A. Ballentine,
Youssef, 1989, Proc. Joumee S.E.E. (SEE Ed. Paris) 1993, 1. App!. Phys. 74, 6302.
p.145. Ooike, T., S. Ishio and T. Miyazaki, 1993, J. Mag. Soc.
Le Gall, H., 1. Ben Youssef, F. Socha, N. Tiercelin, Jpn. 17,271.
V. Preobrazhensky and Pernod, 2000, J. Appl. Phys. Orsier, E., T. Hiramoto, J. Betz, K. Mackay,
87,5783 J.e. Peuzin, D. Givord and A. Garnier, 1996, Meca-
Lim, S.H., T.H. Noh, LK. Kang, S.R. Kim and tronics '96, Besancon (unpublished), p. 537.
S.R. Lee, 1994, J. Appl. Phys. 76, 7021. Osaka, T., 2000, Electrochimica Acta 45, 3311.
Lim, S.H., Y.S. Choi, S.H. Han, HJ. Kim, T. Shima Pasquale, M., A. Infortuna, L. Martino, e. Sasso,
and H. Fujimori, 1998,1. Magn. Magn. Mater. 189, e. Beatrice and S.H. Lim, 2000, J. Magn. Magn.
I Mater. 215-216, 769.
Liu, J.P., F.R. de Boer, P.F. de Chatel, R. Coehoom and Pinkerton, F.E., T.W. Capehart, J.F. Herbst,
K.HJ. Buschow, 1994,1. Magn. Magn. Mater. 134, E.G. Brewer and e.B. Murphy, 1998, J. Appl.
159. Phys. 83, 7252.
Ludwig, A., and E. Quandt, 2000, 1. Appl. Phys. 87, Polk, D.E., 1972, Acta Metal!. 20,485.
4691. Popov, Yu. F., A.M. Kadomtseva, G.P. Vonrob'ev,
Maignan, A., C. Martin, M. Hervieu and B. Raveau, V.Yu. Ivanov, A.A. Mukin, A.K. Zvezdin and
2001, Solid State Comm. 117,377. A.M. Balbashov, 1998, J. App!. Phys. 83, 7160.
Makino, A., T. Bitoh, A. Kojima, A. Inoue and T. Ma- Quandt, E., 1994,1. Appl. Phys. 75, 5653.
sumoto, 2000, J. Magn. Magn. Mater. 215-216, Quandt, E., 1997,1. Alloys Compd. 268,128.
288. Quandt, E., and K. Seemann, 1996, in: Micro Systems
Marin, P., and A. Hernando, 2000, J. Magn. Magn. Technologies 96, eds. H. Reichl and A. Heuberger
Mater. 215-216, 729. (VDE- Verlag, Berlin) p. 451.
Mathieu, R., Y. Guo, P. Svedlindh, P. Nordblad and Quandt, E., and A. Ludwig, 1997, Mat. Res. Soc.
R. Wlippling, 2000, Physica B 284-288, 1432. Symp. Proc., vol. 459 (Materials Research Society)
Mergel, D., H. Heitzmann and P. Hansen, 1993, Phys. p.565.
Rev. B 47, 882. Quandt, E., and A. Ludwig, 1999, J. Appl. Phys. 85,
Miyazaki, T., T. Saito and Y. Fujino, 1997, J. Magn. 6232.
Magn. Mater. 171, 320. Quandt, E., and A. Ludwig, 2000, Sensors Actuators
Morin, P., and D. Schmitt, 1990, in: Handbook of Mag- 81,275.
netic Materials, vol. 5, ed. K.H.J. Buschow (Elsevier Quandt, E., B. Gerlach and K. Seemann, 1994, J. Appl.
Science, North-Holland, Amsterdam) p. I. Phys. 76, 7000.
Mullin, A.A., v.yu. Ivanov, V.D. Travkin, S.P. Lebe- Quandt, E., A. Ludwig, J. Mencik and E. Nold, 1997a,
dev, A. Pimenov, A. Loidl and A.M. Balbashov, J. Alloys Compd. 258, 133.
2000, Physica B 284-288, 1414. Quandt, E., A. Ludwig, J. Betz, K. Mackay and
Nagi, Y., M. Senda and T. Toshima, 1988, J. Appl. D. Givord, 1997b, J. Appl. Phys. 81, 5420.
Phys. 63, 2356. Ramirez, A.P., 1997, J. Phys. Condens. Matter 9, 8171.
Nakano, H., Y. Motome and M. Imada, 2000, Physica Respaud, M., H. Rakoto, 1.M. Broto, 1. Vanacken,
B 284-288, 1406. C. Martin, A. Maignan, B. Raveau and S. Askenazy,
Nan, C.-W., and GJ. Weng, 1999, Phys. Rev. B 60, 2001, Physica B 294-295, 119.
6723. Rhyne, Ll., and R.w. Erwin, 1995, in: Handbook of
Narita, K., J. Yamasaki, H. Fukunaga, 1980, IEEE Magnetic Materials, vol. 8, ed. K.H.J. Buschow (El-
Trans. Magn. ~(;-16,435. sevier Science, North-Holland, Amsterdam) p. I.
Neel, L., 1953, Comptes Rendus 237, 1468. Riedi, K., M. Schnell, F. Schatz, M. Hirscher, B. Lude-
Neel, L., 1954,1. Phys. Radium 15, 225. scher, W. Sigle and H. Kronmuller, 1998, Phys. Stat.
Novosad, V., Y. Otani, A. Ohsawa, S.G. Kim, Sol. (a) 167, 195.
K. Fukamichi, J. Koike, K. Maruyama, O. Kitakami Riedi, zc., T. Thomson and GJ. Tomka, 1999, in:
and Y. Shimada, 2000, J. Appl. Phys. 87, 6400. Handbook of Magnetic Materials, vol. 12, ed.
O'Donovan, K.V., R.S. Beach, M.B. Salamon and K.HJ. Buschow (Elsevier Science, North-Holland,
e.P. Flynn, 1998,1. Magn. Magn. Mater. 186, 161. Amsterdam) p. 97.
Sander, D., 1999, Rep. Progr. Phys. 62,809. Szymczak. H.• R. Zuberek, R. Krishnan, M. Tessier.
Sander, D., R. Skomski, A. Enders, C. Schmidthals, K.B. Youn and C. Sella. 1988, ICMFS-12 Confer-
D. Reuter andJ. Kirschner. 1998.J. Phys. D31, 663. ence Le Creusot, p. 3.
Sander. D., A. Enders and J. Kirschner. 1999, J. Magn. Szymczak, H.• R. Zuberek and J. Gonzalez, 1999. J.
Magn. Mater. 198-199.519. Magn. Magn. Mater. 191, 199.
Schatz. F., M. Hirscher, G. Aik and H. Kronmuller, Tam. A.C.• and H. Schroeder. 1988,1. Appl. Phys. 64.
1993. Phys. Stat. Sol. (a) 137, 197. 5422.
Schatz. F., M. Hirscher, M. Schnell, G. Aik and H. Kro- Tanaka. T.. H. Arimura, S. Kikuchi, S. Sugimoto.
nmuller, 1994,1. Appl. Phys. 76. 5380. M. Okada, M. Homma and K.I. Arai, 1995. 1. lpn.
Shick. A.B.• D.L. Novikov and AJ. Freeman. 1998. I. Inst. Metals 59, 447.
Magn. Magn. Mater. 177-181, 1223. Tejedor, M.• B. Hernando, M.L. Sanchez, V.M. Prida,
Shima. T.• H. Yokoyama and H. Fujimori, 1997. I. Al- I.M. Garcia-Beneytez, M. Vazquez and G. Herzer.
loys Compd. 258.149. 1998, J. Magn. Magn. Mater. 185.61.
Skorvanek. I.. P. Duhaj and R. Grossinger, 2000. I. Teter, J.P., G.c. Homer and L. Bromberg. 2000. J.
Magn. Magn. Mater. 215-216. 431. Appl. Phys. 87, 6313.
Slawska-Waniewska, A.• P. Nowicki, H.K. Lachowicz, Trippel. G.• 1977. IBM Tech. Rep. No. TR28.094.
P. Gorria, 1.M. Barandiaran and Hernando. 1994, Troyanchuk, 1.0., N.V. Samsonenko, A. Nabialek and
Phys. Rev. B 50, 6465. H. Szymczak. 1997, I. Magn. Magn. Mater. 168,
Slawska-Waniewska, A.• R. Zuberek and P. Nowicki. 309.
1996,I. Magn. Magn. Mater. 157-158, 147. Troyanchuk, 1.0.. N.V. Kasper. D.D. Khalyavin,
Slawska-waniewska, A., A. Roig, E. Molins, H. Szymczak, R. Szymczak and M. Baran, 1998,
I.M. Greneche and R. Zuberek, 1997. 1. Appl. Phys. Rev. Lett. 80. 3380.
Phys. 81, 4652. Twarowski, K.. H.K. Lachowicz, M. Kumiski,
Smith, A.B.• 1968, Rev. Sci. Instrum. 39, 378. A. Slawska-Waniewska and G. Herrer, 1995.
Smith, A.B.• and R.V. Jones, 1963. J. Appl. Phys. 34. J. Magn. Magn. Mater. 150, 85.
1283. Van de Riet. E., 1994, J. Appl. Phys. 76, 584.
Sontag. H., and A.C. Tam, 1986. IEEE Trans. U1trason. Vukadinovic, N.• 1988. Thesis. University of Paris.
Ferroelectr. Freq. Cont. 33. 500 Wada, M.• H.H. Uchida, Y. Matsumura, H. Uchida and
Speliotis, A., O. Kalogirou, N. Vouroutzis and D. Niar- H. Kaneko, 1996, Thin Solid Films 281. 503.
chos, 1998.1. Magn. Magn. Mater. 187. 17. Wada. M.• H.H. Uchida and H. Uchida. 1997a, J. Al-
Stobiecki, T., 1. Wrona. M. Czapkiewicz, C. Pra- loys Compounds 258. 143.
dos, FJ. Castano, D. Garcia. M. Vazquez, Wada, M.• H. Uchida and H. Kaneko, 1997b. J. Alloys
M. Kopcewicz, A. Grabias and R. Zuberek, 2000, Compounds 258, 169.
1. Magn. Magn. Mater. 215-216, 566. Wada, M.• H.H. Uchida and H. Uchida, 1997c. J. Al-
Sun. S.W.• and R.C. O'Hand1ey, 1991. Phys. Rev. Lett. loys Compounds 258. 174.
66.2798. Wada, M., H. Uchida and H. Kaneko. 1997d. 1. Alloys
Suzuki. K., A. Makino. N. Kataoka, A. Inoue and Compounds 258, 42.
T. Masumoto, 1991, I. Appl. Phys. 70. 6232. Wandass. 1.H.• J.S. Murday and R.I. Colton. 1988,
Swaddling, P.P.. D.F. MacMorrow, I.A. Simpson. Preprint, Naval Research Laboratory.
R.C.C. Ward. M.R. Wells and K.N. Clausen. 1992, Wang. J.H.• H.Y. Chen, J.H. Wu. Z.X. Liu, T.Y. Chen
J. Phys.: Condens. Malter. 5. L487. and D.S. Dai, 1998. Solid State Comm. 108. 701.
Szumiata, T., H. Szymczak and R. Zuberek, 1993, Wang. B.W., S.C. Busbridge, Y.X. Li, G.H. Wu and
IEEE Trans. MAG·29. 3132 A.R. Piercy. 2000. J. Magn. Magn. Mater. 218.198.
Szumiata, T.• R. Zuberek, I. Gonzalez. A. Slawska- Weber. M.• R. Koch and K.H. Rieder. 1994. Phys. Rev.
Waniewska and H. Szymczak. 1999, 1. Magn. Lett. 73, 1166.
Magn. Mater. 203, 262. Weber. W.• C.H. Back, U. Ramsperger, A. Vaterlaus
Szymczak, H., 1997. J. Appl, Phys. 81. 5411. and R. Allenspach, 1995. Phys. Rev. B 52. 14450.
Szymczak, H., 1999. J. Magn. Magn. Mater. 200,425. Weber, W.• C.H. Back, A. Bischof, Ch. Wilrsch and
Szymczak, H., 2000, J. Magn. Magn. Mater. 211, 186. R. Allenspach, 1996a, Phys. Rev. Lett. 76.1940.
Szymczak, H., and R. Zuberek, 1982, J. Phys. F 12, Weber, W., A. Bischof and R. Allenspach, 1996b. Phys.
1841. Rev. Lett. 76.3424.
Szymczak, H., and R. Zuberek, 1983, 1. Magn. Magn. Williams, P.I.. D.G. Lord and P.I. Grundy, 1994, 1.
Mater. 35. 149. Appl. Phys. 75, 5257.
Winzek, 8., M. Hirscher and H. Kronmuller, 1999. J. Zuberek, R., D. Zymierska and H. Szymczak. 1994.
Alloys Compounds 283, 78. Acta Phys. Polonica A 85, 439.
Wu. R. and A.1. Freeman. 1999. J. Magn. Magn. Mater. Zuberek, R., K. Fronc, H. Szymczak, A. Nabiaiek,
200.498. T. Stobiecki and J. Sokulski, 1995. J. Magn. Magn.
WU,R.Q .• L.1. Chen. A. Shick and A.1. Freeman, 1998, Mater. 139, 157.
J. Magn. Magn. Mater. 177-181, 1216. Zuberek, R., N. Murillo, J. Gonzalez. A. Slawska-
Wiichner, S.• J, Voiron, J.C. Toussaint and J.1. Prejean. Waniewska, K. Fronc, T. Kulik and lA. Gonza-
1995. J. Magn. Magn. Mater. 148,264. lez, 1997a. Proc. Rapidly Quenched and Metastable
Zener, c., 1951. Phys, Rev. 82, 403. Materials, Bratislava, Slovakia. 25-30 Aug. 1996.
Zuberek, R.. H. Szymczak. R. Krishnan. K.B. Youn Supplement (Elsevier) p. 213.
and C. Sella, 1987,lEEE Trans. Magn. 23, 3699. Zuberek, R.• K. Fronc, E. Mosiniewicz-Szablanska and
Zuberek, R..H. Szymczak. R. Krishnan and M. Tessier. H. Szymczak. I997b. J. Phys., IV Proc. Soft Mag-
1988. J. Phys. 49. C8, 1761. netic Materials vol. 13. Grenoble. 24-26 Sep. 1997.
Zuberek, R., A. Wawro, H. Szymczak and M. Baran. Zuberek, R.• N. Murillo, J. Gonzalez, J.M. Blanco and
1991, in: Proc. of the 5th Int. Conf. On Phys. P. Garcia-Tello. 1998. Nanostruct. Mater. 8. 711.
Of Magnetic Materials. eds W. Gorzkowski, Zuberek, R., A. Wawro, H. Szymczak. A. Wisniewski,
M. Gutowski. H.K. Lachowicz and H. Szymczak W. Paszkowicz and M.R.1. Gibbs. 2000, r. Magn.
(World Scientific. Singapore) p. 425. Magn. Mater. 214. 155.
chapter 3
MAGNETIC AND SUPERCONDUCTING

PROPERTIES OF RARE EARTH
BOROCARBIDES OF THE TYPE RNi2B2C
K.-H. MOLLER, G. FUCHS, S.-L. DRECHSLER

Leibniz-Institut fUr Festkorper- und Werkstofforschung Dresden
POB270116, 0-01171 Dresden
Germany
V.N. NAROZHNYI
Institute for High Pressure Physics, Russian Academy of SCiences

Troitsk, Moscow Region, 142190
Russia
Handbook of Magnetic Materials. Vol. 14

@ 2002 Elsevier Science B. V. All rights reserved
199
CONTENTS
I. Introduction . . . . . . . . . . . . . 202
I. I. Discovery of the RNi2B2C superconductors 202
1.2. Boron and carbon based superconductors . . . 202
1.3. On the interplay of superconductivity and magnetism .. 207
1.4. Specific features of the RNi2 B2C compounds . 215
2. Crystal structure and chemical composition . 218
2.1. The LuNi2B2C-type structure . . 218
2.2. Lattice distortions due to magnetoelastic effects . 221
2.3. Single-, double- and triple-layer borocarbides (nitrides) 223
2.4. Related R-T -B-C(N) phases . 224
3. Basic properties of YNi2B2C and LuNi2B2C . 226
3. I. Normal state electronic properties and the superconducting stale 226
3.2. The upper critical field. . . . . . . . . . . . . . . . . . . 230
3.3. Magnetotransport . 234
3.4. Characteristics of superconducting YNi2B2C and LuNi2B2C 240
4. Magnetic and superconducling properties of RNi2B2C . 241
4.1. Magnetic order and the crystalline electric field . 243
4.2. CeNi2B2C 246
4.3. PrNi2B2C 247
4.4. NdNi2B2C 252
4.5. SmNi2B2C . . . 253
4.6. GdNi2B2C .. 254
4.7. TbNi2B2C .. 256
4.8. DyNi2B2C 257
4.9. HoNi2B2C 259
4.10. ErNi2B2C 266
4.11. TmNi2B2C .. 268
4.12. YbNi2B2C .. 270
5. Vortex lattices in RNi2B2C superconductors .. 272
5.1. Vortex lattice in non-magnetic borocarbides 272
5.2. Vortex lattice and magnetic order in ErNi2B2C and TmNi2B2C . 276
5.3. Vortex pinning and magnetic order . 277
6. Superconductivity in R(Ni,T}2B2C and (R, R')Ni2B2C . 277
6.1. R(Ni,T}2B2C compounds (T = Co, Cu, Pd, PI etc.) 277
200
MAGNETIC AND SUPERCONDUCfING PROPERTIES OF RNi2B2C 201
6.2. Effects of disorder . . . . . . . . . . . . . . . . . . . . 279

6.3. Magnetic impurities in a nonmagnetic superconductor 286
6.4. Nonmagnetic impurities in an antiferromagnetic superconductor 288
7. Conclusions . . . 289
1. Introduction
J.J. Discovery ofthe RNi2B2C superconductors
Superconductivity in quaternary rare-earth transition-metal borocarbides (RTBC ) has been

discovered when for seemingly single-phase polycrystaIline samples of the hexagonal
compound YNi4B, at about 12 K, a drop in resistivity as well as in susceptibility
has been observed (Mazumdar et al. 1993). However, the superconducting phase in all
investigated YNi4B samples was at least a minor fraction of the material (~ 2%). It
had been suggested that the superconductivity in the YNi4B samples may be due to
a phase stabilized by the presence of an element other than Y, Ni and B. This was
supported by the observation of bulk superconductivity in polycrystaIline material with
the nominal composition YNi4BCo.2 (Nagarajan et al. 1994). At the same time Cava et al.
(l994a, 1994b) reported results on superconductivity in mu1tiphase YPd5B3Co.35 with a
transition temperature Teas high as 23 K and single-phase materials of the composition
RNhB2C (R =Y, Lu, Tm, Er, Ho with r, ~ 15.5 K, 16.5 K, 11 K, 10.5 K, 8 K),
respectively. Obviously, the superconducting behaviour of the YNi4B and YNi4BCo.2
samples mentioned above is caused by YNi2B2C. Consequently this was the discovery of
the first superconducting quaternary intermetaIlic compound. In the case of the Y-Pd-B-C
system the classification of the phase being responsible for T c ~ 23 K was much more
complicated because, so far, only multiphase superconducting material can be prepared
for this system. Not all of the phases in superconducting Y-Pd-B-C materials could be
identified and evidence for at least two superconducting phases has been reported (Hossain
et al. 1994a). Only quite recently it has finally been shown by a microanalysis technique
that YPd2B2C is the 23 K superconducting phase (Dezaneti et al. 2(00). A typical
de susceptibility-versus-temperature transition curve for polycrystaIline LuNhB2C and
YNi2B2C with T c ~ 16.5 K and 15 K is shown in fig. 1. The growth of very high quality
single crystals of nickel borocarbide superconductors (see e.g. Xu et al. 1994) almost
immediately after their discovery has had a profound impact on the quality of the work
performed. Thus many of the pitfalls of the early research on other complex materials, such
as high T c superconductors, carried out on polycrystaIline samples of variable quality, have
essentially been avoided (Cava 2(01).
J.2. Boron and carbon based superconductors

According to the BCS theory of superconductivity the critical temperature
(I)
202
MAGNETIC AND SUPERCONDUCI1NG PROPERTIES OF RNi2B2C 203
RNi2B2C
o.5 ~&TI-1
~
::i 0
;-2
..
I
I
i
Cl
::J
i:! 14 16
T(KI
IS
E 0 .0
Gi
'1'
o
FC
i" -0.5
~ R=V Lu
ZFC
-1. 0
.J
5 10 15 20
TemperalUf. (K)
Fig. I. Temperature dependence of the de magnetic susceptibility of LuNi2B2C and YNi2B2C in a magnetic
field of 20 De. ZFC and FC means zero field cooling and field cooling, respectively (after Nagarajan et al, 1994).
is determined by the Debye temperature OD representing the phonon spectrum, the normal
state electron density of states N(EF) at the Fermi level and some measure V of the
electron-phonon interaction (Bardeen 1992). Although formula (1) had been derived for
simple systems with the superconductivity driven by electron-phonon interaction, under
the condition N(EF)V « I, it has been successfully applied to describe qualitatively
superconductivity in a very wide class of materials. The value of OD monotonically
increases with the inverse mass of the atoms participating in the lattice vibrations of the
considered material. Therefore low-mass elements and their compounds are considered
as candidates for superconductors with high critical temperature. Thus, monatomic or
diatomic forms of metallic hydrogen are expected to exhibit superconductivity at quite high
temperatures (Ashcroft 1968; Richardson and Ashcroft 1997). However, hydrogen based
superconductivity has not yet been found. The difficulty is to have, simultaneous with
the large Debye temperature, conduction electrons with a large N(EF) and a sufficiently
large V. Besides hydrogen, lithium and beryllium other light elements such a boron
and carbon should be beneficial for increasing T c . For carbon this prediction has been
excellently confirmed recently (see table 1). A critical temperature as high as 117 K
could be achieved upon hole doping of the pristine solid version of the fullerene C60
intercalated by CHBr3 (Schon et al. 2001, see fig. 2). Because C60 is a strong electron
acceptor and, consequently, chemical hole doping of this material is difficult it was done
by electrostatic means using a field-effect transistor device geometry. An advantage of this
method is that, contrary to chemical doping, the doping level can be varied without changes
and imperfections in the crystal lattice. The intercalation with electronically inert spacer
molecules such as CHCh or CHBr3 results in a lattice expansion and, consequently, the
electronic bands narrow and the density of states increases. Thus the doping level and the
value of N(EF) can be controlled independently. It should be noted that the frequency
spectrum of C60 intramolecular vibrations extends to high energies and several of these
modes couple significantly to the electronic states providing considerable intramolecular
~
TABLE 1
Some boron and carbon containing superconductors
Boron and borides Carbon and carbides Borocarbides
T, (K) Space gr. T, (K) Space gr. T, (K) Space gr.
Structure Structure Structure
B 11.2 [I] HP C60 52 [l2] ET LuB2C2 2.4 [26] P4/mbm
~/CHBr3 117 [13] ET YB2C2 3.6 (26) LaB2C2
YBI2 4.7 (2) Fm3m Rb3C60 28 (14) Fm3m
ZrB12 5.8 [2) UB I2 BiF3 M02BC 7.5 (27) Cmcm
BEDT-TTF- 12.8 [l5) HP organic MOzBC
YB6 7.1 [2) Pm3m based salt ~
LaB6 5.7 [2] CaB6 YC2 4.0 [16] I4Immm LuNi2B2C 16[28) 14/mmm ;I:
CaC2 ScNi2B2C 15 [29) LuNi2B2C 3:
MgB2 39 [3) P61mmm La2C3 11 [l7] 143d ThNi2B2C 8 [30) c:
C-
ReB2 6.3 [4) A1B2 (Y,Thh C3 17 [l8) PU2C3 YNi2B2C 15.5 [28] c-
m
YPd2B2C 23 [31,32,35) :oc
~
NbB 8.3 [5] Cmcm MOS6 C 44 13 [l91 Fm3m YPt2B2C 10 [331
NaCI ~
TaB 4.0[5) CrB NbCy 11.8 [20) YRu2B2C 9.7 [341
M02B 5.1 [61 14/mcm M02C 12.2 [51 orthorh.

CuA12
Re3B 4.7 [4) Cmcm LaNiC2 2.7 [21] Amm2
Re3B (La,Th)NiC2 7.9 [22) CeNiC2
LuRuB2 10.0 (7) Pnma
YRuB2 7.8 (7) LuRuB2 LaBrC 7.1 [23J C2Im
YIC 10.0 [24) Gd2C212
YOS3B2 6.0 (7) P6Immm Y(Br,I)C 11.6 [241
LuOs3B2 4.7 [8) CeC°3B2
3:
TABLE 1
(Continued) ~
('5
Boron and borides Carbon and carbides Borocarbides
Te(K) Space gr. Te(K) Space gr. T e (K) Space gr. ~
o
Structure Structure Structure CIl
I
M03Al2C 10 [l9J P4132
~B4 8 9 [9,IOJ P42/nmc tl-Mn
LuRh.i B4 8 12 [9,IOJ CeC04B4 [II] MgNi3C 8.5 [25] Pm3m
YR!4 B4 10 11 [9,1OJ SrTi03
HP- under high pressure, ET - electric field induced doping using field-effect transistor geometry,
[I] Eremets et aI. (2001), [2] Matthias et aI. (1968), [3] Nagamatsu et aI. (2001), [4] Strukova et aI. (2001), [5] Savitskii et aI. (1973), [6] Havinga et aI. (1972), [7]
Ku and Shelton (1980), [8] Lee et aI. (1987), [9J Fischer and Maple (1982), [10] Maple and Fischer (1982), [11] The alternative types LuRu4B4 (s.g. I41/acd) and
~
LuR!4B4 (s.g. Ceca) have also been reported for theRR!4B4 compounds (RogI1984), [12] Schon et aI. (2000), [13] Schon et aI. (2001), [14] Rosseinsky et aI. (1991),
[IS] WJ1liams et aI. (1991), [16] Gulden et aI. (1997), [l7J Giorgi et aI. (1969), [18] Krupka et aI. (1969), [19J Fink et aI. (1965), [20] Gusev et aI. (1996), [21J Lee et aI.
s~
.."
(1996), [22] Lee and Zeng (1997), [23] Simon et aI. (1991), [24] Henn et aI. (2000), [25] He et aI. (2001), [26] Sakai et aI. (1982), [27] Lejay et aI. (1981), [28] Cava ~
et aI. (l994b), [29] Ku et aI. (1994), [30] Lai et aI. (1995), [31] Tominez et aI. (1998), [32] Dezaneti et aI. (2000), [33] Cava et aI. (1994d), [34] Hsu et aI. (1998), [35] iii
CIl
Cava et aI. (1994a). o"rl
~
Z
':;'
..,
t:tI
o
~
206 K.-H. MULLER et aI.
A Drain
Source Gate I
2 Al20a1 i: :::tl
o L.......L-.o.....L...L..L..L-L......u......L...................L............... ...J
o 20.-0 80 80 100 120 1.-0 180 180 200
Temperature (K)
Fig. 2. Resistivity-vs.-temperature transition curves for some C60 based superconductors. (A) Variation of the
hole doping from 1.3 to 3.2 holes per C60 molecule. Inset: the field-effect transistor geometry used in the
experiment. (B) Comparison of optimum hole-doped C60. as grown and intercalated with CHCI3 and CHBr3)
respectively (Schon et al. 2(01).
electron-phonon interaction. Therefore these phonon modes and their coupling to the
electrons will not much be influenced by the doping and intercalation procedure. The
maximum value of T c achieved in C60 by hole doping without lattice expansion is 52 K
(see table I; Schon et al. 2000). Electron doping of C60, which can be done by chemical
as well as electrostatic means, results in lower values of T c because of the higher density
of states in the valence band than in the conduction band. As an example, the chemically
electronically doped bulk material Rb3C60 has a T c of 28 K (Rosseinsky et al. 1991; see
table I). Superconductors with remarkably high critical temperatures have also been found
among organic compounds and inorganic carbides (see table I).
At ambient pressure boron is an insulator consisting of 12-atom icosahedral units. As
reported by Eremets et al. (2001), under high pressure B becomes not only metallic,
as predicted by Mailhiot et al. (1990) but even superconducting and it has a positive
pressure derivative of the critical temperature d T c / dP . Pressure induced superconductivity
has also been found in organic compounds (e.g. BEDT-TTF in table I), spin-ladder
cuprates (Uehara et al. 1996) and many other materials. Obviously pressure can cause,
through various mechanisms, crystallographic and electronic structures that are favorable
for superconductivity. On the other hand the electronic bands of a metal will broaden if
the material is compacted which is consistent with the fact that negative dT c/dP has been
observed for many superconductors (Wijngarden and Griessen 1992). Therefore pressure
MAGNETICAND SUPERCONDUCTING PROPERTIES OF RNi2B2C 207
-8Co) 80
c:
~ 60
'-'
0 s::::PMg
:E
- 40
~
.;!l
</>
20
~
0
0 20 40 60 80 100
Temperature (K)
Fig. 3. Resistivity-vs.-temperature transition curve and crystal structure of MgB2 (after Nagamatsuet al. 2(01).
induced superconductivity, also in the case of boron, is expected to be characterized by

a nonmonotonic pressure dependence of T c with a maximum value of T c at a certain
pressure. Such a behaviour has been confirmed, e.g. for iron (Shimizu et a1. 200 1) and spin-
ladder cuprates (Dagotto 1999). Superconductivity is also known for many borides (see
table 1). The most surprising example is MgB2 a binary compound with a simple crystal
structure, which is well known for many years (Russel et a1. 1953). But, unbelievably, its
transport and magnetic properties had not been investigated until quite recently although
there was an intensive search, on a large international scale, for higher values of T c in the
family of binary compounds. The highest critical temperatures were achieved for A15-
type compounds with a maximum value of about 23 K which could not be improved
since the early seventies until the discovery of the high- T c cuprate superconductors in
1986 (Bednorz and MUller 1986; Wu et a1. 1987). In 2001 Nagamatsu et al, (2001)
found a critical temperature as high as 40 K for MgB2 (see fig. 3). Electronic structure
calculations show that MgB2, being essentially metallic boron held together by covalent
B-B and ionic B-Mg bonding, is electronically a typical sp metal (Kortus et al. 2(01).
The crystal structure of MgB2 may be regarded as that of completely intercalated graphite
with carbon replaced by boron. Thus the band structure of MgB2 is graphitelike, but with
n bands falling deeper than in graphite, and two-dimensionality features are assumed
to be important for the superconductivity in this compound as well as in the surface
of the above discussed solid C60 doped by electrostatic means (Ann and Pickett 2001;
Belashchenko et a1. 200 I). A strong influence of 2D effects on T c had been discussed by
Ginzburg (1964, 2000) but these aspects are yet to be understood. On the other hand, the
electronic structure of the quaternary borocarbides RNizB2C is clearly three-dimensional
(see section 3.1). The lattice structure of LuB2C2 and YB2C2 (see table 1) contains well-
separated BC layers, suggesting 2D behaviour. However, the electronic properties of these
low-Z', superconductors are not yet well investigated.
J.3. On the interplay ofsuperconductivity and magnetism

The discovery of the RTBC superconductors generated great excitement for two reasons.
First. T c ::::; 23 K in the Pd-system was, at that time. the highest known transition
temperature for bulk intermetallics. Such a high T c had been reported for thin Nb3Ge-
films, two decades before (Gavaler et al. 1974). Apart from the relatively high values
of their T c the RTBC have attracted a great deal of attention because they contain rare-
earth magnetic moments in high concentration, which are coupled by exchange interaction.
The interplay between the two collective phenomena magnetism and superconductivity has
been an active area of interest for many years (reviews: Fischer and Maple 1982; Maple and
Fischer 1982; Bulaevskii et al. 1985; Fischer 1990). In this section we will briefly review
this problem starting with compounds where superconductivity and magnetism completely
(to our present knowledge) exclude each other, then continuing with systems for which
some kind of coexistence of these two phenomena was observed and finishing with the
recently discovered coexistence of superconductivity and weak itinerant ferromagnetism.
1.3.1. Superconductivity and magnetic ordering as antagonistic phenomena

In the usual BCS theory of superconductivity electrons are paired with opposite spins
and, obviously, they cannot give rise to magnetically ordered states. Hence magnetic order
and superconductivity should be antagonistic. In high- T c cuprate materials, depending on
the doping rate, the Cu 3d electrons (or holes) contribute to a localized antiferromagnetic
(or spin glass) state or they participate in superconductivity, i.e. the two phenomena do not
coexist (Aharoni et al. 1988; Luke et al. 1990).
Intriguing forms of competition between superconductivity and ferromagnetism have
recently been reported for the elements carbon and iron, where the two cooperative
phenomena are related to different crystallographic structures. As discussed in section 1.1
pristine C60 consisting of dominantly van der Waals bounded C60 molecules becomes
superconducting if doped by electrons or holes. On the other hand, under sufficiently
high pressure and temperature, a layered rhombohedral structure of C60 forms where,
within the layers, the C60 molecules are covalently bound. This phase is metastable at
room temperature and ambient pressure. It shows a spontaneous magnetization, which is
assumed to be based on unpaired electrons created by structure defects (Makarova et al.
2001; Xu and Scuseria 1995).
It is well known that, at pressure above 10 GPa, Fe transforms from a ferromagnetic
cubic phase into a non-ferromagnetic hexagonal phase. Wohlfarth (1979) argued that the
hexagonal iron may be a low-temperature superconductor. This prediction has now been
confirmed by Shimizu et at. (2001) who found superconductivity in Fe below 2 K at
pressures P between 15 and 30 GPa. An interesting open question is whether high-pressure
iron is an unconventional superconductor with Cooper paring mediated by magnetic
fluctuations (as proposed by Fay and Appel in 1980) instead of phonons. At T = 0 the
superconductivity disappears at a quantum critical point (P ~ 30 GPa in fig. 4). This may
be due to reduced magnetic fluctuations or to a reduced density of states N (E F) caused by
electron-band broadening at higher densities.
1.3.2. Superconductors with magnetic impurities

The superconducting state can coexist with magnetic moments of localized electrons
(e.g. of 4f type). It was experimentally found by Matthias et at. (l958a) that for rare-
earth impurities substituted into a superconductor T c rapidly decreases with increasing
impurity concentration and that superconductivity is completely destroyed beyond a
2000.----------.,.----,
hcp
o 20 40 60
Pressure (GPa)
Fig. 4. Proposed temperature-pressure phase diagram of iron (after Saxena and Littlewood 2(01) with the
ferromagnetic body-centered cubic (bee) phase. the paramagnetic face-centered cubic phase (fcc) and the
hexagonal close-packed phase (hcp).
critical concentration of the order of one percent. This has been well understood by
a theoretical approach of Abrikosov and Gor'kov (1961) who took into account that
scattering by magnetic impurities leads to pair breaking. However, many systems with
rare-earth magnetic moments show deviations from the behaviour predicted by Abrikosov
and Gor'kov (AG). As has been proven theoretically (Keller and Fulde 1971; Fulde and
Peschel 1972) and confirmed by many experiments, effects of crystalline electric fields
on the magnetic moments result in a weaker decrease of T c with increasing impurity
concentration compared to the AG prediction. On the other hand, it was demonstrated
theoretically by Muller-Hartman and Zittartz (1971) and experimentally by Riblet and
Winzer (1971) that effects of hybridization and strong correlation (Kondo effect) may
cause a considerably stronger reduction of T c than predicted by AG. Furthermore the
AG predictions will fail for higher concentrations of the rare-earth magnetic moments
which are usually coupled by certain types of indirect exchange interaction and show
cooperative magnetic phenomena. The first example where such deviation from the
AG behaviour has been realized is CeRu2 where over 30% of non-magnetic Ce can be
replaced by Gd (Matthias 1958b; Peter et al. 1971), Tb (Hillebrand and Wilhelm 1970;
Ferdinandez-Baca and Lynn 1981) or Ho (Lynn et al. 1980; Willis et al. 1980) before
superconductivity is suppressed. The measurements of susceptibility, specific heat and
Mossbauer effect as well as neutron scattering clearly indicated that the ordering of the
heavy-rare-earth magnetic moments in these materials is of spin-glass or, strictly speaking,
cluster-glass type with short range ferromagnetic order (Roth 1978; Davidov et al. 1977).
For the pseudobinary systems (Gd,La)Ru2 (Jones et al. 1978) and (Nd,Th)Ru2 (Huser et al.
1983) which are superconducting spin glasses or cluster glasses, similar as the (R,Ce)Ru2
systems mentioned above, even so called reentrant superconductivity occurs as shown
in fig. 5 for the compound Nd(l.3sThO.6SRu2. The competition between superconductivity
and ferromagnetic short-range order results in a complicated non-monotonic temperature
dependence of the susceptibility. In the temperature range around 1 Kelvin the material is
superconducting IxI < 0). Cooling below this temperature range would return the material
into the normal state (X I > 0). A reentrance of superconductivity is observed below 0.2 K.
o 0.5 1.0 1.5 2.0

Temperature T (K)
Fig. 5. Reentrant superconductivity in Nd(l.3SThO.6SRu2 (after HUser et aI. 1983). Upon cooling, first, the real
part of the ac susceptibility, X', becomes negative, indicating superconductivity. Then the material reenters the
normal state (X' > 0) and reentrance of superconductivity occurs at lower temperatures.
The reason why reentrant behaviour occurs in (Gd,La)Ru2 and (Nd,Th)Ru2 but not in the
(R,Ce)Ru2 system may be that in the former compounds the magnetic correlation length
of the spin-glass state is closer to the superconducting coherence length than in (R ,Ce)RU2
compounds. The reentrance of superconductivity at low temperatures (in fig. 5) is attributed
to the well known fact that, in diluted magnetic materials, larger ferromagnetic clusters
become unstable at low temperatures (HUser et al. 1983; Nieuwenhuys et al. 1979).
J.3.3. Superconductivity and local-magnetic-moment cooperative phenomena

To understand the interplay of superconductivity and magnetism in systems containing
localized magnetic moments in high concentration Gor'kov and Rusinov (1964) extended
the AG theory taking into account cooperative magnetic phenomena. They concluded
that ferromagnetism would destroy superconductivity because the conduction electrons
will be polarized by exchange interaction with the ordered magnetic moments. Ginzburg
(1956) had pointed out, already before, that superconductivity and ferromagnetism in
(type-I) superconductors can only coexist if the magnetic induction caused by the
magnetization M s is smaller than the critical field of the superconductor, i.e, the
spontaneous magnetization has to be sufficiently small. For type-Il superconductors this
conclusion has to be modified as only states must be excluded which, at the same
time, are homogeneously magnetized and homogeneously superconducting. This will be
achieved if the induction caused by M s is smaller than the lower critical field He I. An
alternative solution of the dilemma is the self-induced formation of vortex structures (see
e.g. Fulde and Keller 1982). A further possibility is that the electromagnetic coupling of
superconductivity and magnetism causes an oscillating magnetic (instead of homogeneous
ferromagnetic) order which coexists with a homogeneous superconducting state. The
wavelength of the oscillations is governed by the penetration depth A of the superconductor
(Blount and Varma 1979; Matsumoto et al. 1979). An alternative mechanism for oscillatory
magnetic order has been proposed by Anderson and Suhl (1959): the strength of
the exchange interaction between the rare-earth magnetic moments mediated by the
conduction electrons (RKKY interaction) is changed in the superconducting state because
the electron-spin susceptibility is reduced in the long-wavelength range. Consequently
MAGNETIC AND SUPERCONDUCTING PROPERTIES OF RNi2B2C 211
the effective exchange interaction in the superconducting state will have a maximum at
a finite wavelength, leading to an oscillatory magnetic state, even if the material would
be ferromagnetic in the absence of superconductivity. The wavelength of this state is
controlled by the coherence length ~ of the superconductor.
It was predicted by Baltensperger and Strassler (1963) that antiferromagnetic order may
coexist with superconductivity. The first examples of compounds where true long range
magnetic order coexisting with superconductivity has been observed are ternary Chevrel
phases RM06SS and RRh4B4 compounds (see Fischer and Maple 1982; Maple and Fischer
1982). In these materials there is a separate fully occupied rare-earth sublattice. It is
assumed that the magnetic moments and the superconducting electrons in these compounds
belong to different more or less "isolated" sublattices, which supports superconductivity
to exist despite the high concentration of localized magnetic moments (Lynn 200 I).
The magnetic ordering temperatures are low (~ I K) whereas T e is considerably larger.
Therefore it cannot be excluded that magnetostatic interaction dominates the energies in
the magnetic subsystem. It was found that in ErRh4B4 (Fertig et al. 1977) and HoM06Ss
(Ishikawa and Fischer 1977) superconductivity is in competition with ferromagnetic long-
range order, which results, in a reentrant behaviour and in coexistence of superconductivity
with oscillatory magnetic states (Thomlinson et al. 1982; Lynn et al, 1984). For most of
the superconducting RM06SS and RRh4B4 compounds the magnetic interactions favor
antiferromagnetic order with a magnetic unit cell on a length scale small compared to
~ and A which results in a relatively weak influence on the superconducting state i.e.
antiferromagnetic order and superconductivity do readily accommodate one another. The
antiferromagnetic transition in these materials has been confirmed by neutron scattering
(see Thomlinson et al. 1982). Initially this transition had been observed as an anomaly in
the upper critical field (Ishikawa et al. 1982). In particular, a near-reentrant behaviour has
been found for some of the antiferromagnetic ternary compounds i.e. reentrant behaviour
occurs if a sufficiently high magnetic field is applied, as shown in fig. 6 for GdM06SS.
To explain the near-reentrant behaviour it is usually argued (see Maple and Fischer 1982)
that, in the vicinity of the antiferromagnetic ordering temperature TN, the applied field
induces a remarkable degree of ferromagnetic order which has been confirmed for various
compounds.
In the case of GdM06Ss, additionally, large spin fluctuations below TN have been
assumed to enhance the near-reentrant behaviour (Ishikawa et al. 1982). Machida et al.
(1980b) extended the theory of antiferromagnetic superconductors (Baltensperger and
Strassler 1963), taking into account effects of the antiferromagnetic molecular field caused
by aligned local magnetic moments in addition to spin fluctuations. They found that the
anomalies of Ha in RM06SS (R = Gd, Tb, Dy) can be explained by the formation
of energy gaps of spin density waves on the Fermi surface. Morozov (1980) as well as
Zwicknagl and Fulde (1981) integrated the concept of Baltensperger and Strassler (1963)
into the Eliashberg theory and they found that the influence of the antiferromagnetic
staggered magnetization on the phonon-mediated quasiparticle attraction also results in
an anomaly, in particular a reduction below TN, of H eZ(T).
The cuprates RBazCu307-,s with the orthorhombic (nearly tetragonal) Rl23-type
structure exist for R = Y and all 4f elements with the exception of Ce and Tb, For
0<8 < 0.6 they are cuprate-mixed-valence high-Z', superconductors, with the exception
ZIZ K.-H. MULLER et al.
1.0
GdMo~8
0.8
as 0.6
IX 0.4
0.2
0.5 1.0 1.5

Temperature (K)
Fig. 6. Resistance-vs-temperature curves of a GdMo6Sg sample for different values of the applied magnetic
field. indicating near-reentrant superconductivity i.e. reentrant behaviour at finite field only (nominal composition
Gd1.2Mo6Sg; after Ishikawa et aI. 198Z).
of R = Pro The value of T c is about 90 K and it practically does not depend on the choice
of R. GdBazCu307 shows three-dimensional antiferromagnetic ordering with TN ~ 2.2 K
and a staggered magnetic moment of 7.4JlB which is close to the Hund's rule Gd 3+ free
ion value (Paul et al. 1988). Since TN does not much change if [, is increased from 0
to I and the material becomes a semiconductor with antiferromagnetic ordering of the
Cu 2+ magnetic moments (Dunlap et al. 1988) the Gd magnetic order cannot be dominantly
governed by indirect exchange via conduction electrons (RKKY interaction) and the two
antiferromagnetic structures on the R and the Cu sublattices are only weakly coupled to
each other. On the other hand the value of TN ~ 2.2 K is too high to be explained by
dipolar interactions only. Thus the type of magnetic coupling of the R magnetic moments
is not yet fully understood. For R = Nd, Srn, Dy, Er, Yb the single-R 3+-ion crystal field
splitting results in magnetic (doublet) ground states and the RBa2Cu307 compounds with
these R elements show antiferromagnetic ordering with TN ~ I K. For R = Dy and Er
the R magnetism (as well as the Cu magnetism) is two-dimensional (Lynn 1992). For
R = Ho the crystal field ground state in the R 123 structure is a singlet. Nevertheless,
antiferromagnetic ordering (TN = 0.17 K) has been observed also for this compound and
the Ho magnetic moments have assumed to be induced in the electronic singlet ground
state by nuclear hyperfine interaction (Dunlap et al. 1987). In these R 123 superconductors
the superconductivity persists below TN. Hence there is no measurable effect of the
ordered magnetic moments on superconductivity. This supports that exchange interaction
between the conduction electrons and the rare-earth magnetic moments is minor and pair-
breaking due to exchange scattering is weak. On the other hand, the relatively high value
of TN ~ 2.2 K (for Gd123) suggests that some small indirect exchange between the rare-
earth magnetic moments operates across the CU02 layers (Fischer 1990). The situation
is totally different for Prl23 where antiferromagnetic order of the Pr magnetic moments
develops at T N ~ 17 K and superconductivity does not occur. The superconductivity in
Prl23 which has been recently reported by Zou et al. (1998) is not yet understood or
even finally secured. It may be connected with a modified composition of the samples as
well as a modified occupation of the lattice sites by Pr and Ba ions (see Narozhnyi and
Drechsler 1999). The anomalous behaviour of Prl23 has been attributed to hybridization
of Pr 4f states with 0 2p states, completely disrupting the quasiparticles which form the
Cooper pairs in the CU02 planes and dramatically increasing the exchange interactions
between the Pr magnetic moments (Fehrenbacher and Rice 1993; Lynn 1997; Skathakumar
et al. 1997). A further consequence of the hybridization of the Pr 4f electrons, besides the
enhanced value of TN and the absence of superconductivity, is a considerable interaction
of the Cu magnetic subsystem with the Pr subsystem: contrary to the behaviour of the
RI23 materials mentioned above Prl23 shows Cu antiferromagnetism in the whole range
of 0 = 0 ... 1 with an ordering temperature TN[CU] of about 300 K (instead of TN[CU]
~ 410 K for YI23 at 0 ~ 0.9). Furthermore, below TN ~ 17 ... 20 K an incommensurate
magnetic structure develops involving both the Pr and the Cu moments where the Cu
moments are found to be non-collinear (see Boothroyd 2000).
Coexistence of superconductivity and magnetic order has also been reported for
ruthenocuprates with typical composition RuSr2RCu20g or RuSr2(R,CehCu201O, with
R = Sm, Eu or Gd, where the magnetic-ordering temperature TN = 100 ... 180 K is
much higher than T; = 15 .. .40 K (Bauernfeind et al. 1995; Braun 2001). Neutron
diffraction experiments (Lynn et al. 2001) have shown that TN is related to basically
antiferromagnetically ordered magnetic moments in the Ru sublattices and, in the case
of RuSr2GdCu20g, the Gd moments order independently antiferromagnetically at 2.5 K.
The small ferromagnetic component reported for these materials for temperatures below
TN is attributed to spin canting resulting in weak ferromagnetism of Dzyaloshinsky-Moria
type and to explain the coexistence of this type of magnetism with superconductivity it has
been assumed that the magnetically ordered Ru sublattice is practically decoupled from the
superconducting CU02 planes (Bernhard et al. 1999; FeIner 1998, FeIner et al. 1999).
In the Heusler alloy ErPd2Sn superconductivity and antiferromagnetic order coexist
although there is no clear separation between the superconducting and the magnetic
sublattices and T c ~ 1.17 K is not much different from T N ~ I K (Shelton et al. 1986;
Stanley et al. 1987). However, the focus on this interesting compound was short lived
because of the discovery of the high T c cuprate superconductors (Lynn 200 I).
An interesting theoretical prediction is that, similar as in the p-wave superconductors
discussed in the next subsection, non-magnetic impurities in an antiferromagnetic
superconductor cause pair breaking (Morozov 1980; Zwicknagl and Fulde 1981) whereas
non-magnetic impurities in a non-magnetic superconductor are not expected to destroy
superconductivity (Anderson 1959).
1.3.4. Superconductivity and itinerant-electron magnetism

Fay and Appel (1980) predicted unconventional superconductivity (p-wave paring, i.e.
spin triplet pairing) mediated by longitudinal spin fluctuations to coexist with itinerant
ferromagnetism if the magnetization is small enough. These authors also declared ZrZn2
as a candidate for this phenomenon. For reasons of time-reversal symmetry, in p-wave
superconductors all impurities are pair breakers (Foulkes and Gyorffy 1997) and, therefore,
superconductivity will be observed only in very clean samples. This behaviour is different
from that of BCS (s-wave) superconductors where nonmagnetic impurities do not destroy
superconductivity (Anderson 1959). Matthias and Bozorth (1958) had found that ZrZn2 is
ferromagnetic although both elements, Zr and Zn, are non-ferromagnetic. These authors
60
r*_
~ ... TC UGe2
• ....
g 40 ~"-
"-
!! ,.
::J
~ Ferromagnetism ,.
8- \
.,,
E \.
{!! 20 Superconductivity
10 TSC 'I
\
I
00 1 2
Pressure (GPa)
Fig. 7. The temperature-pressure phase diagram of UGe2 (Saxena et al. 2000). TC is the Curie temperature and
Tee the superconducting transition temperature (normally denoted Tel.
also were the first who suggested that ZrZn2 could be a superconductor. Wohlfarth (1968)
showed that ZrZn2 is a weak itinerant d-electron ferromagnet. Now the superconductivity
in ZrZn2 has been confirmed for very pure samples (Pfleiderer et al. 200 1). At ambient
pressure the Curie temperature T c and the critical temperature Teare 28.5 K and 0.29 K,
respectively. Under hydrostatic pressure T c and T c disappear at the same pressure.
Therefore the ferromagnetic state is assumed to be a prerequisite for superconductivity
and the above mentioned p-wave pairing mechanism is assumed to be valid for this
material. Superconductivity coexisting with weak itinerant ferromagnetism has also been
reported for UGe2 (Saxena et al. 2000) and URhGe (Aoki et al. 2001) and it has been
assumed to be based on the same magnetic p-wave pairing mechanism as in ZrZn2 (Huxley
et al. 2001). In UGe2 the superconductivity is pressure induced and, as in the case of
ZrZn2, it disappears at the same pressure as the ferromagnetism (see fig. 7). However,
the magnetic moments are expected to be more localized in UGe2 than in ZrZn2 because
they are due to f -electrons rather than d -electrons. Therefore Suhl (200 I) and Abrikosov
(200 1) developed an alternative pairing model based on interaction of the conduction
electrons with ferromagnetically ordered localized spins which can only lead to an s-wave
order parameter. This concept is supported by experiments of Bauer et al. (2001) who
showed that, different from the case of ZrZn2. high-purity specimens with long mean free
paths are not necessary in UGe2 in order to observe superconductivity near the critical
pressure where the magnetic ordering temperature vanishes. Furthermore, for the s-wave
superconductivity not to be destroyed by magnetism the metal has to be a heavy-fermion
type which also is supported by the experimental results of Bauer et al. (200 I).
Superconductivity has also been found to coexist and compete with itinerant-electron
antiferromagnetism (spin density waves) which has extensively reviewed by Gabovich
et al. (2001).
In summary, there are various forms of the interplay of magnetism and superconductiv-
ity, which can be divided into competition and coexistence phenomena. In the elements C
and Fe different types of crystal structure and bonding between the atoms, both varied
by preparation routes or thermodynamic parameters such as pressure, result in one of the
antagonistic cooperative phenomena ferromagnetism or superconductivity. Strong compe-
tition is found in high- T c cuprates where, depending on the doping rate, Neel-type antifer-
romagnetism (or spin glass) or superconductivity occur, both based on copper d-electrons.
Coexistence of localized magnetic moments (e.g. from 4 f -elements) with superconductiv-
ity is known for systems where the concentration of these moments is small enough or they
are antiferromagnetically ordered and only weakly coupled to the conduction electrons.
Even weak ferromagnetism of such localized moments can coexist with superconductiv-
ity.In RuSr2GdCu20g and (R,Ce)RuSr2Cu201O-8, probably, the Ru subsystem with weak
ferromagnetism of Dzyaloshinsky-Moriya type is weakly coupled to and coexists with su-
perconducting CU02 layers. Most surprising is the recently reported coexistence of weak
itinerant ferromagnetism with superconductivity based on d or f electrons in ZrZn2, UGe2
and URhGe.
1.4. Specific features ofthe RNhB2C compounds

A striking feature distinguishing the superconducting RTBC from other superconductors
known until 1994 is that for certain combinations of elements Rand T superconductivity
and antiferromagnetic order have been found to coexist in RT2B2C with the values of the
magnetic ordering temperature TN being comparable with the T c values (see fig. 8) i.e. the
magnetic energy is comparable with the superconducting condensation energy. Therefore
the investigation of these compounds is expected to result in new insights into the interplay
of superconductivity and magnetism. In addition to many specific studies in this field,
published so far, there are various reports and review articles summarizing experimental
and theoretical results on the superconducting and magnetic properties of these materials
and comparing them with other superconductors, as e.g. Maple (1995), Canfield et a1.
(1997b), Lynn (1997), Takagi et a1. (1997), Andreone et a1. (1998), Canfield et al. (1998),
LuTmEr Ho Dy Tb Gd
20 /
,.'.'
:: 15 ~/ "
,.,-
,/TN
~ .".
" 10 ,.,
c • ,.
IV ,
~5 .,~ •
.~.,/,.
0&;...--.......- -.....- -....
o 5 210 15
=
DG (g -1) J (J + 1)
Fig. g. Critical temperatures for superconductivity, T c. and for antiferromagnetic ordering, TN, for RNi2B2C
compounds with R = Lu, Trn, Er, Ho, Dy, Tb and Gd. DO is the de Gennes factor, g the Lan~ factor and
J the total angular momentum of the R3+ Hood's rule ground state. The straight lines represent rough linear
approximations.
216 K.-H. MULLER et al.
FeIner (1998), Gupta (1998), Nagarajan and Gupta (1998), Paranthaman and Chakoumakos
(1998), Schmidt and Braun (1998), Hilscher and Michor (1999), Naugle et al. (1999),
Drechsler et al. (1999), Schmiedeshoff et al. (2000), Tominez et al. (2000), Drechsler
et al. (2oo1b), Muller and Narozhnyi (2001a). Also articles in this field are collected in
the Proceedings of the NATO Workshop "Rare Earth Transition Metal Borocarbides",
held in Dresden, Germany in June 2000 (Muller and Narozhnyi 2oo1b). The high values
of TN demand that in quaternary borocarbides, different from the situation in high- T c
cuprates and the classical magnetic superconductors, exchange coupling between the rare-
earth magnetic moments is the dominant magnetic interaction rather than magnetostatic
interaction. Obviously the exchange is mediated by conduction electrons. Consequently
also the interaction between the magnetic moments and the conduction electrons must be
relatively strong. Figure 8 shows a linear scaling of TN and, roughly approximated, also of
T c with the de Gennes factor
(2)
of the R 3+ Hunds' rule ground state where g is the Lande factor and J the total angular
momentum (de Gennes 1958). Such so called de Gennes scaling, at the same time for
TN and T c- is known for various isostructural metallic R compounds, which is due to
the fact that both effects, antiferromagnetism and the suppression of superconductivity are
governed by exchange interaction of conduction electrons with R 4 f electrons. In some
approximation both, TN and the difference I:i. T c of the critical temperature compared to
that of a nonmagnetic (DG = 0) reference material can be written as
(3)
where I is the strength of the exchange interaction between 4 f electrons and the conduc-
tion electrons and N(EF) is the density of states at the Fermi level (Fischer 1990). From
fig. 8 it can be seen that both cases, TN < T« (R = Tm, Er, Ho) and TN > T c (R = Dy)
occur in the series RNhB2C. A similar phase diagram as that in fig. 8 had been predicted
by Machida et al. (1980a). As can be seen in fig. 9, de Gennes scaling does not work if a
larger class of materials is considered within the series RNi2B2C. (As will be discussed
in subsection 2.1, two lattice structures have been reported for ScNi2B2C. Therefore the
position of Sc in fig. 9 is questionable and, in reality, the dashed line may be monotonous.)
In particular there is a strong influence of the lattice parameters on T c which cannot be
explained by only taking into account the variation of N(EF) in the expression (3). Obvi-
ously, T c also very much depends on nonmagnetic effects (see subsection 3.1).
Useful means for the investigation of both superconducting and magnetic subsystems
are measurements under high hydrostatic pressure P. The first results on the influence of
P on T; of RNi2B2C (R = Y, Lu, Tm, Er and Ho) were reported by Schmidt and Braun
(1994). Other groups report on results of high pressure studies also on other borocarbides
(Gao et al. 1994; Murayama et al. 1994; Alleno et al. 1995b; Looney et al. 1995; Carter
et al. 1995; Uwatoko et al. 1996; Bud'ko et al. 1996; Weht et al. 1996; Meenakshi et al.
1996, 1998; Jaenicke-Roessler et al. 1999, Cappannini et al. 1998; Oomi et al. 1999,2001;
Murdoch et al. 1999; Matsuda et al. 2001; Dertinger 200 1; Falconi et al. 200 1). High-
pressure studies on YNjzB2C at room temperature do not indicate any structural transition
MAGNETIC AND SUPERCONDUCfING PROPERTIES OF RNi282C 217
Lu
~>---.",y
~ 15 (LuY)- " ,,
,,
,,
\
\
'.Th
\
ADy \
\
\
\
\
Sm Nd '-
Yb d Ce \ La
O'--_L.--.1JL.-oI..1IL.Z.lI~I1.....""""'~
QD Q~ Q~ Q~ QTI Q ~
Lattice parameter a (nm)
Fig. 9. Transition temperature and lattice parameter a for RNi282C compounds with LuNi282C type structure
(see subsection 2.1) for non-magnetic (Lai et aI. 1995) and magnetic R elements. The curves are guides to the
eye. The (Lu, Y)-value is taken from Freudenberger et aI. (1998a).
up to P = 16 GPa (Meenakshi et al. 1996, 1998). The bulk modulus is measured to be

200 GPa and estimated to be 270 GPa from calculations based on the TB-LMTO method
(Meenakshi et al. 1996). Values of the bulk modulus close to those mentioned above have
been obtained for LuNi2B2C (210 GPa) within the local-density approximation (Weht et al.
1996). The results on the influence of P on T c in these materials are contradictionary. For
example, Schmidt and Braun (1994) found that Tc(P) decreases linearly with pressure at
rates of -0.058 KlGPa. This is in agreement with the results of Murayama et al. (1994), but
is in contradiction with the data of Alleno et al. (1995b) who found a Tc(P) dependence
with positive initial slope of +0.03 KlGPa and with a peak centered at P ~ 0.52 GPa.
These observations indicate that even the sign of the pressure dependence of T c depends
on the microstructure of the samples (Alleno et al. 1995b). Contrary to the behaviour of T c-
the magnetic ordering temperature TN has found to increase with increasing pressure for
all RNhB2C compounds investigated so far, i.e. for R = Gd (Bud'ko et al. 1996), Ho
(Carter et al. 1995; Uwatoko et al. 1996; Dertinger 200 1) and Er (Matsuda et al. 200 1).
The effect of pressure on the interplay between superconductivity and magnetism in
borocarbides has been discussed for R = Tm (Oomi et al. 1999), Er (Matsuda et al. 2(01)
and Ho (Uwatoko et al. 1996; Carter et al. 1995; Oomi et al. 2001; Dertinger 2(01). It
was pointed out that the much stronger suppression of H c2 under high pressure observed
for ErNhB2C and TrnNi2B2C, compared to RNhB2C compounds with non-magnetic R,
may be connected with some instability of the superconducting state of these magnetic
superconductors. Most extensively the influence of pressure has been investigated for
HoNi2B2C (see also subsections 4.9.3 and 4.9.4).
In this article we will report on the current status of research on the quaternary
borocarbide superconductors starting from their discovery. We will concentrate on the
magnetic and superconducting properties of RNhB2C compounds. Section 2 is devoted
to the typical crystal structure of RNi2B2C and lattice distortions caused by magnetic
ordering but also to other compounds and lattice structures which are related to RNi2B2C.
Z18 K.-H. MULLER et al.
Section 3 briefly summarizes electronic and superconducting properties of RNi2BZC

compounds with nonmagnetic R elements. Special features are Fermi surface nesting
characterized by the nesting wave-vector (0.55,0,0) and phonon softening at the same
wave vector (subsection 3.1), and the positive curvature of the upper critical field as
a function of temperature, He2(T), discussed in subsection 3.2. RNjzB2C compounds
with 4 f elements R are considered in section 4. Among them, Ce and Yb are
interesting because, in RNi2BzC, they show intermediate 4f-valence and heavy fermion
behaviour, respectively. DyNjzB2C is outstanding because it is one of the exceptional
antiferromagnetic superconductors with TN > T e . In HoNjzB2C three different types of
magnetic order occur and the competition between superconductivity and magnetism is
most complex. An exciting feature of ErNjzB2C is the coexistence of superconductivity
with some kind of weak ferromagnetism. Results on flux line lattices in the borocarbides,
including the transformation from hexagonal to square lattices, are presented in section 5.
The investigation of pseudoquaternary compounds, reported in section 6, provides some
more insight into the pair-breaking mechanisms in the borocarbides. A short summary and
conclusions are presented in section 7.
2. Crystal structure and chemical composition
2.1. The LuN;zB2C-type structure
With the investigation of superconducting rare-earth transition-metal borocarbides the

new LuNi2B2C-type structure, space group I4/mmm, has been discovered which can be
considered as the ThCr2Si2-type, space group I4/mmm, interstitially modified by carbon
(Siegrist et al. 1994a, 1994b). Figure 10 shows the nonmodified and the modified structures
with Th -. Gd, Cr -. Co, Si -. Band Lu -. Gd, Ni -. Co, respectively. The family of
ternary rare-earth transition-metal metalloid compounds with the ThCr2Si2-type structure
is very large (Just and Paufler 1996) and a broad variety of magnetic and electronic
properties have been observed in it. For example in SmMn2Ge2 both Sm and Mn carry a
magnetic moment and two metamagnetic transitions occur connected with giant magneto-
resistance effects (Brabers et al. 1993). Different collective phenomena as heavy-fermion
behaviour, superconductivity and magnetic order have been found in the exotic compound
CeCu2Si2 (Steglich et al. 1995). The LuNi2B2C-type structure has three open parameters,
the two lattice constants a and c and the coordinate z of the boron atom. It has been
pointed out by Godart et al. (1997) that the values of a and c of RNjzB2C compounds
show a certain dispersion indicating a domain of existence which is in agreement with
the variety of physical properties observed in many individual cases. The structure of the
RNjzB2C compounds is highly anisotropic with a ratio cia of about 3. It has alternating
sheets of Ni2B2 tetrahedra and RC layers. In a good approximation, the parameters c and
z linearly decrease with increasing radius of R (where R is assumed to be in the trivalent
oxidation state) whereas a linearly increases with the radius of R, with the exception of Ce
(see subsection 4.2). Thus while going through the series of R elements from Lu to La, the
structure shows a contraction along the tetragonal c-axis but an expansion perpendicular
to it i.e. a decrease of the anisotropy characterized by cia and the boron shifts away from
the RC-Iayers more in the vicinity of the Ni layers. However, the radius variation of the
(8) (b)
Fig. 10. (a) GdC02B2 has the ThCr2Si2-type structure, where Gd resides on the Th, Co on the Cr and B on
the Si sites, respectively. (b) GdC02B2C has the LuNi2B2C-type structure i.e, the ThCr2Si2-type interstitally
modified with C atoms. The lattice constants are a = 3.575 Aand c = 9.561 Afor GdC02B2 (Feiner et aI. 1984),
a = 3.548 Aand c = 10.271 Afor GdC02B2C (Mulder et aI. 1995). respectively.
rare earth does not much affect the B-C distance and the B-Ni distance. Consequently,
there is a remarkable reduction of the B-Ni-B tetrahedral angle from 108.8° for Lu to 102°
for La which is expected to influence the variation of the electronic structure within the
series of RNi2B2C compounds. The Ni-Ni distance in LuNhB2C (2.449 A) is smaller
than that in metallic Ni (2.492 A) and underlines the metallic character of the RNizB2C
compounds.
Table 2 shows the known RT2B2C compounds (R: Sc, Y, La, Th, or 4f or 5f el-
ements; T : 3d. 4d or 5d elements). Table 3 contains the superconducting compounds
from table 2 as well as their superconducting transition temperatures T c and, if existing,
magnetic ordering temperatures TN. Superconductivity in CeNizB2C has been reported
(El Massalarni et al. 1998a) and is exceptional in that this is the only superconducting
RNizB2C compound with a light rare-earth R and Ce is in a mixed-valence state (see
subsection 4.2).
Single crystals on which most of the physical investigation has been performed have
been grown by the flux method (Xu et al. 1994) and it has also been proven to be possible
to grow single crystals by floating zone (Takeya et al. 1996) and zone melting methods
(Behr et al. 1999a). Various melting techniques have been used to prepare polycrystalline
materials (see e.g. Torninez et al. 2000). c-axis aligned or even epitaxial RNizB2C thin
films have been successfully prepared by pulsed laser deposition (Cimberle et al. 1997;
Hase et al. 1997, 2(01) as well as magnetron sputtering technique (Arisawa et al. 1994;
Andreone et al. 1996). Non-equilibrium methods as rapid quenching (Strom et al. 1996;
Freudenberger 2(00) or mechanical alloying (GUmbel et al. 2(00) have been utilized to
search for metastable phases. In some systems metastable phases form also in normal
melting procedures. For example, ScNizB2C (Ku et al. 1994; Tomilo et al. 2001, 1999)
and ThNhB2C (Sarrao et al. 1994; Hossain et al. 1994b; Zandbergen et al. 1994b) have
been found to be metastable. In the case of ScNizB2C two different tetragonal lattice
=
structures have been reported with the lattice parameters a 0.332 nm, c 1.004 nm =
TABLE 2
Known R-T -B-C compounds with the LuNi2B2C-type structure. Compounds printed in bold face are
superconductors
CeCo2B2C GdNi2B2C LuC02B2C SmRh2B2C YCo2B2C

CeNi2B2C GdRh2B2C LuNi2B2C TbNi2B2C YNi2B2C
CePt2B2C HoC02B2C NdNi2B2C TbRh2B2C YPd2B2C
CeRh2B2C HoNi2B2C NdPt2B2C TbNi2B2C YPt2B2C
DyNi2 B2C HoRh2B2C NdRh2B2C ThPd2B2C YRu2B2C
DyPt2 B2C LaIr2B2C PrNi282C TbPt2B2C YbNi282C
DyRh2B2C LaNi2B2C PrPt2B2C ThRh2B2C
ErNi2B2C LaPd2B2C PrRh2B2C TmNi2B2C
ErRh2B2C LaPt2B2C ScNi2B2C UNi2B2C
GdC02B2 C LaRh2B2C SmNi2B2C URh2B2C
TABLE 3
8orocarbide superconductors with LuNi2B2C-type structure and their superconducting transition temperature T c
and magnetic ordering temperature TN
Compound Tc<K) TN(K) Compound Tc<K) TN(K)
CeNi2B2C 0.1 [IJ YRu2B2C 9.7 [20J

DyNi2B2C 6.2 [2J, 6.4 [3J II [2,18J LaPd2B2C 1.8 [21)
HoNi2B2C 8 [4J, 7.5 [5J 5 ... 8 [8,9,IOJ ThPd2B2C 14.5 [15J
ErNi282C 10.5 [4,5J 6.8 [11,12J YPd2B2C 23 [4,16,19J
TmNi2B2C II [4,5J 1.5 [13,14J LaPt2B2C 10 ... 11 [l7,22J
LuNi2B2C 16.5 [4,5J PrPt2B2C 6 {17,22J
YNi2B2C 15.5 (4] YPt2B2C 10 .. _11 [l7,22J
ScNi2B2C 15 [6J ThPt2B2C 6.5 [I5J
ThNi2B2C 8 [7J
[I) EI Massalami et al. (1998a), [2J Cho et al. (1995a), [3J Tomy et al. (1995), [4J Cava et al. (1994b), [5J Eisaki
et al. (1994), [6J Ku et al. (1994), [7J Lai et al. (1995), [8] Grigereit et al. (1994), [9J Goldman et al. (1994),
[10] Canfield et al. (1994), [I I) Sinha et al. (1995), [12] Zarestki et al. (1995), [13] Cho et al. (1995b), [14] Lynn
et al. (1997), [15] Sarrao et al. (1994), [16] Tominez et al. (1998), [17] Cava et al. (l994d), [18] Dervenagas
et al. (1995a), {19] Dezaneti et al. (2000), {20] Hsu et al. (1998), {21J Jiang et al. (1995), {22] Buchgeister et al.
(1995).
and a = 0.354 nm, C = 1.055 nm where only the latter phase has been found to be
superconducting (Tomilo et al. 2(01). Therefore the dashed curve in fig. 9. in reality. may
be monotonic because the lattice constant a of superconducting ScNi2B2C should be close
to that of YNbB2C. Also it was found that some of the RNi2B2C compounds are rather
stable. Thus YNi2B2C starts oxidizing and decomposing only above 850°C (Buchgeister
and Pitschke 1996).
Neutron diffraction data seem to provide evidence that all the crystallographic sites
in RNbB2C are fully occupied and there is no site mixing (Tominez et al. 2000).
However. the conventional diffraction techniques may be not enough sensitive to determine
interchange or defects on the Band C sublattices in these compounds. Such effects may
be one of the reasons why superconducting and magnetic properties of the borocarbide
superconductors do very much depend on the metallurgical state of the samples (Lynn
et al. 200l).
TABLE 4
Structural and magnetic properties of RC02B2 and RC02B2C phases with the ThCr2Si2 and LuNi2B2C-type
structure, respectively
RC02B2 a (A) c(A) z of the Type of Tc (K) TN (K)

RC02B2C B site (4e) magnetic order
YC02B2 3.5598 [2] 9.342 [2] 0.3780 [5] P [2]

YC02B2C P (Pauli) [1,6]
LaC02B2 3.6186 [2] 10.223 [2] 0.3750 [5] P[2]
LaC02B2 C
PrC02B2 3.5985 [2] 9.951 [2] F[2] 19.5 [2]
PrC02B2 C
NdC02B2 3.5920 [1,5] 9.8381 [1,5] 0.3750 [5J F(l,2J 32 [I]
NdC02B2C A[6J ""3 [6J
SmC02B2 3.5806 [2J 9.673 [2J no (F imp [2])
SmC02B2 C A [6] ""6[6]
GdC02B2 3.575 [l,5J 9.561 [1,5] 0.3750 [5] F [l,2J 26 [1,2]
GdC02B2C 3.548 [3) 10.271 [3] A[3J 5.5 [3J
A (helical) [4] ""7 [4]
TbC02B2 3.5670 [5J 9.4889 [5] 0.3750 [5] ?
TbC02B2 C A [6] ""6 [6]
DyC°2 B2 3.5548 [2] 9.331 [2] A [2] 9.3 [2J
Dy C02B2C A [6] ""8 [6J
HoC02B2 3.5517 (2J 9.251 [2J A [2J 8.5 [2J
HoC°2B2C 3.500 [6] 10.590 [6J A [6], SR at 1.46 K 5.4 [6]
ErC02B2 3.5450 [2J 9.161 [2] A [2] 3.3 [2J
ErC°2B2C A [6] ""4 [6]
F - ferromagnetic; A - antiferromagnetic; P - paramagnetic; imp - impurity phase; SR - spin reorientation;

TC - Curie temperature; TN - Neel temperature; a and c - tetragonallanice parameters, z - coordinate
of B with c as its unit.
[IJ Feiner (1984), [2) Rupp et al. (1987), [3] Mulder et al. (1995), [4J Bud'ko et al. (1995a), [5] Just and Paufler
(1996), [6] Rapp and El Massalami (1999).
It should be noted that for RNi2B2C the counterpart without carbon does not exist.
Co is, so far, the only transition metal for which both the filled (with C) and the non-
filled structures could be prepared (see table 4). The examples of ferromagnetic GdC02B2
and antiferromagnetic GdC02B2C show that the introduction of interstitial carbon has
a remarkable effect on the magnetic and, consequently, electronic properties of these
compounds.
2.2. Lattice distortions due to magnetoelastic effects

Magnetic ordering in RNi2B2C compounds may result in a structural distortion caused
by magnetoelastic effects. Using high-resolution neutron scattering on powder samples
or high resolution x-ray diffraction on single crystals tetragonal-to-orthorhombic phase
transitions have been observed for ErNizB2C (Detlefs et al, 1997a; Kreyssig et aI. 2(01),
TbNizB2C (Song et al. 1999a; Kreyssig et al. 2001; Song et a1. 2001a, 2001b), DyNi2B2C
222 K.-H. MOLLER et aI.
TABLES
Magnetoelastic tetragonal-to-orthorhombic distortions at T = 1.5 K(after Kreyssig et aI. 2(01) for HoNi~ I B2C.
DyNi~ I B2C. TbNi~ IB2C and ErNi~ IB2C (direction of the distortion from Del1efs et aI. 1999). The depicted
direction for the distonion isthe direction, inwhich the (ab) basal plane is shortened, The distonion isquantified
bythe ratio ofthe side length ofthe onhorhombic (ab) basal plane subtracted by I. All directions are described
in the tetragonal reference system
Compound Propogation vector Magnetic moment Distortion

Value Direction Value Direction
HoNi~IB2C (00 l) 1O.2ttB 11 10j 0.0019 (I 10j
DyNi! IB2 C (001) 8.0ttB [I 10) 0.0034 [I I OJ
TbNi! IB2 C (0.55100) 8.2ttB [100) 0.0062 [0 I OJ

ErNi! IB2 C (0.55400) 8.2ttB [0 I OJ 0.0024 [0 10j
o
o (332)
0 10
o
o
g
-...
l/)
E borth :
::J
o
o
154 156
U~----
26 (01
(a) (b)
Fig. 1I. Onhorhombic distonion of tetragonal HoNi2B2C (a) upon cooling from 15 K to 1.5 K the neutron
diffraction reflection (332) splits into two peaks. (b) Schematic presentation of the distortion: a, b - original
tetragonal axes; dashed line: tetragonal basal plane; -+, t: shift ofthe Ho atoms leading tothe onhorhombic cell
with the axes aorth' borth' Thick arrows: Ho magnetic moments inthe commensurate c-axis modulated structure
(Kreyssig et aI. 1999a).
(Gasser et a1. 1998a; Kreyssig et al. 2001) and HoNi2B2C (Kreyssig et al. 1999a). The
results of some of these investigations are summarized in table 5. Due to the different
types of antiferromagnetic order occurring in these compounds (see section 4) different
types (directions) of the orthorhombic distortion develop in the magnetically ordered state.
Such magnetoelastic distortions are common in rare-earth compounds and result from a
competition of elastic. magnetic and crystalline-electric-field energy (Morin and Schmitt
1990). It has been pointed out by Detlefs et al. (1999) that the lowering of lattice symmetry
not only concerns the lattice structure but also has consequences for the magnetic structure
and has to be taken into account for their determination as well as description. As an
example. fig. 11 shows the splitting of a certain neutron-diffraction reflection. caused by the
distortion, and a schematic representation of the distortion, for HoNhB2C, The distortion
is a shortening of the tetragonal unit cell in [110] direction.
2.3. Single-, double- and triple-layer borocarbides (nitrides)

The RNi2BzC compounds can be considered as n = I variants of (RCIN)nNhBz
structures where n RC or RN layers alternate with single NizBz layers (see fig. 12). For
n = 2 the compounds YNiBC (Kitd et al. 1997), GdNiBC (EI Massalami et al. I995b),
TbNiBC (EI Massalami et al. 1998b), DyNiBC (EI Massalami et al. 1998b), HoNiBC (EI
Massalami et al. 1995a), ErNiBC (Chang et al. 1996a), YbNiBC (Hossain et al. 1998),
LuNiBC (Siegrist et al. 1994a) and LaNiBN (Cava et al. 1994c) have been successfully
prepared. Among them only LuNiBC was reported to be superconducting (Gao et al.
1994) which, however, is questioned (Cava 2001). Superconductivity was observed in
R(Ni,Cu)BC by the substitution of Cu for Ni up to T c = 8.9 K for R = Y and up to
T c = 6.4 K for R = Lu (Gangopadhyayand Schilling 1996). Superconductivity has been
also reported for various RReBC samples which, however, consisted of unknown phases
(R = Lu, Gd, Tb; Chinchure et al. 1999). ErNiBC is a ferromagnet (Chang et al. I996a).
Comparative studies on RNiBC compounds have been presented by Fontes et al. (1999),
Bourdarot et al. (2001) and Baggio-Saitovitch et al. (2001). For n = 3 the superconductor
La3NizBzN3 has been successfully prepared (Cava et al. 1994c; Zandbergen et al. 1994a;
Michor et al. 1996, 1998). Ce3NizB2N3 also exists but it is not superconducting above 4 K
(Cava 200 I). For n = 4 the non-superconducting compounds LuzNiBCz (Zandbergen et al.
1994c) and Y2NiBC2 (Rukang et al. 1995) have been reported. However the relative
positions of the layers do not appear to correlate overlong distances and the 2:1:1:2 phase
is subject to severe microtwinning. So far no detailed analysis on the crystal structure and
physical properties of the n = 4 compounds has been published.
(c) lAJNi2B2NJ =>

I41mmm
(a) LuNi2B2C (b) LuNiBC
l4Immm P4Inmm
Lu
T,-16K T,-3K? T,-12K
Fig. 12. Tetragonal rare-earth nickel borocarbides (nitrides) with (a) single, (b) double and (c) triple
RC(N)-Iayers and values of the superconducting transition temperature T c (Cava et al. 1994c; Gao et al. 1994;
Zandbergen et al. 19943, respectively).
224 K.-H. MOLLER et al.
The investigation of the whole family of these multilayer compounds would help to
understand the mechanisms for superconductivity and magnetism in the quaternary rare-
earth transition-metal borocarbides (Michor et al. 200 I; Baggio-Saitovitch et al. 200 I).
However this report will be confined to magnetism and superconductivity in single-
layer RNi2B2C compounds i.e. compounds with (RCIN)nNi2B2 with n > I will not be
considered further.
2.4. Related R-T -s-a N) phases

Besides the intermetallic compounds and lattice structures discussed in the previous
subsections. there are various further quaternary. ternary and binary phases in the R-
T -B-C(N) systems which are related to the quaternary borocarbide superconductors.
The presence of such phases in the samples. even in small amounts. may lead to
wrong conclusions concerning the superconducting or magnetic behaviour of the main
phase under investigation. Thus ferromagnetic impurity phases may pretend weak
ferromagnetism or reentrant superconductivity. On the other hand superconducting
impurity phases may simulate superconducting behaviour of the investigated main phase.
Of particular interest are phases. which form in equilibrium with the I :2:2: I borocarbide
superconductors.
First. the series (RC)nNhB2 can be formally extended to (RC)n(Ni2B2)m with m i= I
and/or n i= 1. Kito et al. (1997) prepared the n = 3, m = 2 quaternary borocarbide
Y3Ni4B4C3 which is a tetragonal layered structure (proposed space group 14) built up
of a half YNhB2C unit and a full YNiBC unit stacked along the c-axis, Measurements
of resistance and susceptibility indicated a superconducting transition temperature of
about 10 K (for a two-phase material containing the 3:4:4:3-phase together with the
I: I: I :l-phase),
In spite of the discovery of the LuNhB2C-type structure the crystal structures
of quaternary superconducting R-T-B-C phases in the composition range near the
stoichiometry I:2:2: I are far from being completely determined. This is particularly true
for R-Pd-B-C compounds where the highest value of T e • 23 K for Y-Pd-B-C. had been
reported (Cava et al. 1994a). Pd-based borocarbides have been prepared by arc melting
(Cava et al. I994a; Sarrao et al. 1994) and also by non-equilibrium routes as rapid
quenching (Strom et al. 1996; Freudenberger 2000) or mechanical alloying (Gumbel
et aI. 2000). Although superconducting phases with LuNi2B2C-type structure have been
identified for Th-Pd-B-C (Sarrao et al. 1994) and Y-Pd-B-C (Tominez et al. 1998) in all
cases the samples have been found to be multiphase where (at least some of ) the phases
of the mixtures are metastable and have a lattice structure with fcc symmetry (Strom
et al. 1996; Freudenberger 2000). A detailed determination of that fcc structure from
x-ray diffraction data is difficult and has not yet been achieved. An example of a non-
identified superconducting phase in the Th-Pd-B-C system appears in fig. 13. Figure 14
shows the x-ray pattern of a Ho-Pd-B-C sample with nominal I:2:2: I stoichiometry and
the fcc lattice constants a of a series of R-Pd-B-C compounds prepared by rapid quenching
(melt spinning).
Among the numerous ternary rare-earth borocarbides the compounds RB2C2 with
the LaB2C2-type structure (space group P4/mbm) consist of R layers and covalently
bonded B-C networks alternatively stacked along the tetragonal c-axis (Bauer and Bars
1.2r---"'---'-~-~---,
_ 1.0
~
It) 0.8
C\J
~ 0.6
E 0.21- - - - .1
-- 0.4
a: 0.0 Th-Pd-B-C, non-identified

-0.2
5 10 15 20 25
T [K] t t
Fig. 13. Transition curves (resistance R vs. temperature T) of arc melted Th-Pd-B-C with two superconducting
phases: a not yet identified phase together with ThPd2B2C (Sarrao et al. 1994).
8 4.25
Ce
~7
'a:::l 6
Ho-Pd-B-C R-Pd-B-C •
Sm· .·Eu
E
4.20 c
.....u
Pr
.
.c
~4
5 80
~ ,-..
Er. Gd
Dy
.·Nd 4.15
~
0
8N
~
.'::: 3
'"
~ 2
~
y.
Tm.·~Ho
Tb
4.10 E
.''""
c,
Lu· 4.05
-
C 1
0
40 2.0
.sc
2.2 2.4 2.6
'iU
4.00 ..J
2.8
0
.~
Atomic radius [nm]

(a) (b)
Fig. 14. (a) X-ray diffraction pattern of a rapid quenched sample with the nominal composition HoPd2B2C with
typical fcc reflexes. (b) Lattice constant a of the non-identified fcc unit cell for different rapidly quenched samples
of nominal composition RPd2B2C (Freudenberger 2(00).
1980). This series is interesting because it contains superconductors, YB2C2 and LuB2C2
(see table I), as well as magnetically ordered compounds with relatively complicated
magnetic structures affected by quadrupolar interactions. DyB2C2 and HoB2C2 show a
small spontaneous magnetization below Tc ~ 15 K (Yamauchi et at. 1999) and 5 ... 7 K
(Sakai et at. 1981; Onodera et at. 1999), respectively. The ternary compounds RNi4B with
the CeC04B-type structure (s.g. P6/mmm) are worth mentioning because YNi4B was the
main phase on which trace superconductivity had been found leading to the discovery
of the quaternary borocarbide superconductors (see subsection l.l). For R elements with
partially filled 4f shells these 1:4: I compounds are magnetically ordered with ordering
temperatures of 10.5 K, 39 K, 36 K, 18.5 K, 12 K, 6 K, 8 K and 3.5 K for R = Nd, Sm, Gd,
Th, Dy, Ho, Er and Tm, respectively (Nagaraj an et at. 1995). HoNi4B has a spontaneous
magnetization below Tc ~ 6 K (AlIeno et at. 2(01). Further ternary compounds possibly
forming in equilibrium with RNhB2C are RNiC2 (space group Amm2, Behret aI. 1999b)
and RNi2C2 (Takeya et al. 1996) as well as R2Ni3B6 (orthorhombic, space group Cmmm)
where H02NhB6 has a spontaneous magnetization below Tc ~ 12 K (Alieno et al. 2(01).
There are also many binary compounds, which have to be considered as possible
impurity phases in the quaternary borocarbides as e.g. Ni2B (s.g. I4/mcm), NbB and Ni3C
(both s.g. Pnma) or RB2 (s.g. P6/mmm), RB4 (s.g. P4/mbm), RB6 (s.g. Pm3m), RB 14-
(s.g. Im3m) and R2C3 (s.g. I43d) where HoB2 is a ferromagnet with Tc = 15 K (Buschow
1980) and YB6, YB 12, Y2C3 are superconductors (Godart et al. 1995).
3. Basic properties of YNhB2C and LuNhB2C
In this section we will briefly report on properties of RNi2B2C superconductors with

elements R that have zero total angular momentum in their R 3+ Hund's rule ground
state. Starting with the knowledge of these nonmagnetic borocarbide superconductors it
will be easier to understand the behaviour of borocarbide superconductors with magnetic
R 3+ ions, considered in sections 4 to 6. The superconducting transition temperature T c
of the nonmagnetic RNhB2C superconductors, with R = Sc, Lu, Y, Th, are presented in
fig. 9 and table 2. As already mentioned the position of Sc in fig. 9 might be questioned
as the lattice constant a of superconducting ScNhB2C has recently been reported to be
considerably larger (see subsection 2.1 and Tomilo et al. 2(01). Since superconducting
ScNi2B2C is metastable and because Th is radioactive and thus more difficult to handle
most published work on non-magnetic RNhB2C superconductors concerns YNi2B2C and
LuNh B2C.
3.1. Normal state electronic properties and the superconducting state

Although the isomer shift of the Dy nucleus, determined by Mossbauer studies on
DyNi2B2c' suggested that the Dy-C plane is insulating and the electrical conduction seems
taking place mainly in the Ni-B sheets (Sanchez et al. 1996) it is now generally accepted
that the RNhB2C compounds, despite their layered crystal structure, are three-dimensional
in their electronic behaviour, and hence they are quite different from the layered cuprates
(Lynn et al. 1997). Three-dimensional, nearly isotropic metallic behaviour was confirmed
by measurements of the temperature dependence of resistivity, p(T), on single-crystalline
YNi2B2C (see fig. 15) and LuNi2B2C over the entire temperature range T < 300 K
(Fisher et al. 1997). A clearly three-dimensional, yet anisotropic electronic structure has
also been experimentally determined using x-ray absorption spectroscopy (Lips et al.
1999). An isotropic character of the superconducting state of YNi2B2C was found by
torque magnetometry (Johnston-Halperin et al. 1995). Different from the Cu in cuprate
systems Ni does not carry a local magnetic moment in the quaternary borocarbides (Lynn
2001). For YNi2B2C this had been confirmed by Suh et al. (1996) analyzing susceptibility
and NMR data as well as results of electronic structure calculations. These authors also
could exclude antiferromagnetic spin correlations on the Ni sublattice. Electronic structure
calculations clearly showed that the I:2:2: I borocarbides are three-dimensional metals
with all atoms contributing to the metallic character and, although the main contribution
to the density of states at the Fermi level, N(EF), arises from Ni 3d electrons, there is a
considerable admixture of Y 4d as well as B 2p and C 2p electrons (Pickett and Singh 1994;
MAGNETIC AND SUPERCONOUCfING PROPERTIES OF RNi282C 227
40
35
30
e
u
25
a 20
~
Q.
15
10
5 YNi 2B2C
0
0 50 100 150 200 250 300
Temperature (K)
Fig. 15. Isotropic metallic behaviour of the resistivity of YNi282C. measured along the tetragonal c-axis and
a-axis of a single crystal (Fisher et al. 1997).
Mattheis 1994; Mattheis et al. 1994; Coehoorn 1994; Ravindran et al. 1998; see fig. 16). It
has been concluded that the superconductivity in RNhB2C is related to the high density of
states on its narrow peak at the Fermi level shown in fig. 16 for YNhB2C but also detected
for LuNi2B2C and YPd2B2C (Coehoorn 1994). In the Bardeen-Cooper-Schrieffer (BCS)
theory of superconductivity the transition temperature T c strongly increases with N(EF):
T c = 1.13BDexp(-ljN(EF)V), (4)
where 00 is the Debye temperature characterizing the phonon spectrum of the material
which limits the attractive range of the electron-phonon (el-ph) interaction. V is some
measure of the electron-phonon interaction and N(EF)V« 1 is provided (Bardeen et al.
1957a. 1957b). For LaNi2B2C the value of N(EF) is about half of that for LuNhB2C or
YNhB2C (Mattheiss et al. 1994; Divis et al. 2000) and it has been argued that, according
to equation (4). this is the reason why LaNhB2C is not superconducting. However
it has been pointed out by Drechsler et al. (1999) that the superconductor LaPt2B2C
with T; ~ 11 K has a similar or even lower value of N(EF) compared to LaNizB2C
(Singh 1994). Consequently, since OD is similar for all RNhB2C compounds. there must
also be a considerable variation of the parameter V across the series of the quaternary
borocarbides, which affects T c according to equation (4) or these materials are not simple
BCS superconductors. A remarkable boron isotope effect has been observed for YNi2B2C
as well as LuNi2B2C supporting the classification of these materials as phonon mediated
superconductors (Lawrie and Franck 1995; Cheon et al. 1999. see fig. 17). The BCS
theory predicts for the isotope effect T c '" M -a where M is the mass of the atoms which
substantially participate in the lattice vibrations being relevant for the superconductivity,
and a = 0.5 is the isotope exponent. For YNi2B2C and LuNi2B2C Cheon et al. (1999)
found aD ~ 0.21 and 0.11, respectively, as the partial isotope exponents of boron. No
15 - total
--- NI-3d
10
,
"8 - Y-5p .
I
--- Y-4d II
_\ I
"
I
"'~ - 1·"\.../
\,
, \~
- C-2p
-10 -8 -6 -4 -2 o 2 4
energy (eV)
Fig. 16. Total and partial density of states calculated for YNi282C. using the local density approximation. The
Fermi level EF is at zero energy (Rosner et aI. 2001).
carbon isotope effect could be observed in YNi2B2C i.e. no change of T c when 12C is
substituted by l3C (Lawrie and Franck 1995).
Although at first glance the observation of a clear B isotope effect seems to prove the
el-ph mechanism and the special role of a high-frequency B Aig related phonon near
100 meV which strongly modulate the NiB4 tetrahedral bond as suggested by Mattheiss
(1994), a more detailed analysis shows that this phenomenon is probably much more
complex and electronic degrees of freedom are involved, too (Drechsler et al. 2oo1a,
2001b). In fact, any attempt to reproduce the isotope effect within the standard classical
phonon scenario based on the Eliashberg theory (Shulga et al. 1998» requires a significant
coupling to those high-frequency modes and limits in this way the total coupling strength
to Aph < 0.7, at variance with the analysis of specific heat data pointing to a larger coupling
strength Aph ~ 1. (We remind the reader that the Eliashberg and BCS coupling constants
are approximately related as Aph ,....., (N(EF)V + 11-*)/0 - N(EF)V); compare eq. (4),
11- * ~ 0.1 is the Coulomb pseudopotential.) In addition, the nearly twice as large isotope
exponent observed for YNjzB2C in comparison with that of the closely related compound
LuNi2B2C can be understood in such a nonclassic scenario.
Analyzing thermodynamic data and phonon densities of states Hilscher and Michor
(999) concluded that for 1:2:2:1 borocarbides the BCS weak-coupling limit is not
0.0
-0.2
Q' -0.4
M
~__ -0.6
~
-0.8
14.0 14.5 15.0 15.5

Temperature (K)
Fig. 17. Field cooled magnetization measured for increasing temperature at /-LoB = 2.5 mT on single crystalline
YNi2B2C with the two isotopes lOB (solid lines) and I I B (dotted lines), clearly indicating a boron isotope effect
(after Cheon et al, 1999).
fulfilled and strong-coupling effects arise from the presence of particular low-frequency
optical phonon modes. This is also supported by point-contact spectroscopy (Yanson et al.
1997). These effects can well be described by strong-coupling corrections of Carbotte
(1990). Hilscher et al. (2001) have shown that a strong drop of T c from LuNhB2C
or YNhB2C to LaNi2B2C can be predicted by using the formula of McMillan (1968)
who calculated T c in the framework of the Gor'kov-Eliashberg theory which takes into
account strong coupling effects as well as details of the phonon spectrum and of the
electron-phonon coupling (Allen 1991). However in this approach, the electronic structure
is described by an isotropic single band which may be the reason why some problems
with the borocarbide superconductors remained unsolved despite the mentioned above
corrections to the BCS theory, as e.g. the question why LaPt2B2C and YRu2B2C are
superconducting but LaNi2B2C and YCo2B2C are not, or the anisotropy and the unusual
temperature dependence of H c2 discussed in subsection 3.2 where an extension of the
single-band theory to a two-band structure is introduced. The key to the mentioned
problems is the complex Fermi surface (FS) of the quaternary borocarbides, which consists
of several sheets and is highly anisotropic with strongly varying values of the Fermi
velocity VF (Drechsler et al. 200 1a; Rosner et al. 200 1). Therefore T c will not be governed
by the overall density of states N(EF) but by the partial density of states (DOS) of
slow electrons that have been shown to stem from nested regions with nesting vectors
r ~ (0.5 ... 0.6,0,0). For LuNhB2C a nesting feature had been predicted by Rhee
et al. (1995) and has been confirmed by positron annihilation (Dugdale et al. 1999). The
nesting vector r also reappears in phonon softening observed in LuNhB2C and YNhB2C
(Dervenagas et al. 1995b; Zarestky et al. 1999). Probably the normal-state resistivity p is
isotropic (see fig. 15) because it is related to groups of electrons with relatively large VF
being less anisotropic and not associated with FS nesting. In LaNi2B2C nested regions are
missing and there is a smaller dispersion of VF (Rosner et al. 200 I).
3.2. The upper critical field

The upper critical field H c2(T) is a fundamental quantity of type-II superconductors.
It provides deep insight (i) into the coupling strength, (ii) into the electronic structure,
(iii) into the symmetry and anisotropy of the order parameter, (iv) into the presence of
various disorder related scattering processes, and, in the case of magnetic rare earth ions
present, into (v) the anisotropy of the crystal field and local exchange processes. All
these factors affect the magnitude, the shape and the anisotropy of H c2 (T). Naturally,
it is a very difficult task to take into account all of them on equal footing within a
consequent microscopic theory. In this respect borocarbide superconductors are very
complex systems quantitatively not yet well understood. However, due to the rich variety
of possible isoelectronic chemical substitutions systematic investigations are possible and
as a consequence much qualitative insights can be gained.
The experimental data, reported in the literature, on the upper critical field H c2 of
YNhB2C and LuNhB2C scatter considerably due to paramagnetic signals from impurities
that are difficult to avoid in the nominally non-magnetic borocarbides (Mun et al. 1998).
Nevertheless it has clearly been shown for both compounds that H c2 is anisotropic not
only with respect to the tetragonal c-axis and the basal plane but also within that plane
(Xu et al. 1994; Takagi et al. 1997; Rathnayaka et al. 1997; Metlushko et al. 1997; Du Mar
et al. 1998). Figure 18 shows, as an example, the determination of H c2 and its anisotropy
from the measured temperature dependence of magnetization of a LuNhB2C single crystal
in an applied magnetic field. (It is interesting that a finite slope for H c2 (T) as T ..... 0
was found for LuNi2B2C, see Schmiedeshoff et al. 2001). The out-of-plane anisotropy
can be described within the phenomenological one-band GL theory of superconductivity
(Ginzburg and Landau 1950) or its microscopic derivation from the BCS theory (Gor'kov
1959) by an effective mass anisotropy. In the case of LuNhB2C (fig. 18) the degree of
the out-of-plane anisotropy of H c2 is nearly temperature independent and the resulting
mass anisotropy, mUm: ::::: 1.35, is in good agreement with the Fermi surface anisotropy
resulting from band structure calculations (Mattheis 1994).
The in-plane anisotropy cannot be explained within the (local) GL theory. In principle,
nonlocal extension introduced by Hohenberg and Werthamer (1967) might be helpful
to overcome this difficulty. In this approach, valid for weak anisotropies, in addition to
the second rank mass tensor, a fourth rank tensor is introduced. The nonlocal effects
were predicted to be observable in sufficiently clean materials where the transport mean
free path I becomes larger than the coherence length ;. Strictly speaking, the correct
description of strongly anisotropic cases as the nested (quadratic) parts of the Fermi
surface would require the introduction of a large number of higher order ranked tensors
or a discrete description (Maska and Mierzejewski 2001). Therefore the frequently used
simple nonlocal approaches mentioned below should be taken with some caution despite
its certain success in describing the physics of vortex lattices (see chapter 5). At least the
(b)
0
-0.5
s
i"
I.e
- 1
~
-1.5
H=3.0T
- 2
--<100>
-2.5 --<110>
--<001>
- 3
8.5 9 9.5 10 10.5 11
T(K)
Fig. 18. Temperature dependence of the magnetization of a LuNi2B2C single crystal in a field of 3 T applied
along the crystallographic directions c, a and (110), clearly showing an out-Qf-(tetragonal basal) plane anisotropy
as well as an in-plane anisotropy of H c2 where H c2(T) is determined by the indicated linear extrapolation (after
Metlushko et aI. 1997).
clear microscopic meaning of the effective quantities present in the weak anisotropic case
is lost in the strongly anisotropic one.
The nonlocal effects can result in an anisotropy in H c2 due to anisotropy of the pairing
state (Shiraishi et al. 1999) or anisotropy in the shape of the Fermi surface. In the case of
{LaSr)Cu04, for example, the anisotropy of H c2 has been explained by a d x2-y2 pairing
state (Takanaka and Kuboya 1995). The results of Metlushko et al. (1997) on H c2 and the
field dependence of specific heat suggested the superconductivity of the borocarbides to
be of d-waves nature too (Nohara et al. 1997; Wang and Maki 1998). However, now it is
widely believed that the borocarbides are conventional s-wave superconductors (Prozorov
et al. 1994; Cywinski et al. 1994; Ekino et al. 1996; Yang et al. 2000; Won and Maki
200 I) which was concluded from magnetic properties, muon spin resonance, tunneling
spectroscopy, specific heat, inelastic light scattering etc., but the quasiparticle energy gap
is strongly anisotropic. This anisotropy and/or the anisotropic shape of the Fermi surface
(see Drechsler et al. 1999) are assumed to cause the mentioned basal anisotropy of H c 2
because the borocarbide superconductors are usually clean-limit type II superconductors.
In the clean limit for an anisotropic Fermi surface the non-local corrections to H c2 are
given by
H c2(T, ¢J) = D[l + (-3/2 + 0.34C)t + 0.34Atcos(4¢J)]t, (5)
where t = 1 - T / T c- ¢J is the angle in the basal plane, measured with respect to the
tetragonal a-axis, A and C contain averages of the Fermi velocity and can be estimated
from electronic-structure calculations or taken, together with D, as fitting parameters
(Metlushko et al. 1997). For LuNjzB2C these authors found C = 9.4, A = 0.43 and a very
good agreement of the experimentally determined dependence of H c2 on T and ¢J with
equation (5). Also the data of H c2 measured in c direction could very well be reproduced
Iii
o
-.;:;
'5 2
---- ......
~ single band'" ......
a.
::::> limp = 17cm
-I ......
.....
0.3 0.6 0.9

Temperature r/r,
Fig. 19. Hez(T) of a LuNi2B2C single crystal measured parallel to the tetragonal c-axis (0). The solid curve was
calculated using a two-band model (see text). Dashed lines: isotropic single-band (l5B) models with two values
of Y imp (see text; after Shulga et al. 1998).
by a corresponding formula. A special feature of equation (5) is, for appropriate values
of A and C, a positive curvature of the temperature dependence of H c2 near T c- which
does not occur in the BCS theory. Such an upward curvature has been observed along
all crystal orientations, for LuNizBzC as well as YNi2BZC. An example is shown in
fig. 19. The anomalous S-like shape of Hcz(T) as compared with the standard parabolic-
like Werthamer-Helfand Hohenberg (WHH) is roughly characterized by three parameters,
the two curvature exponents near T = 0 and T = T c and the inflection point in between.
An empirically found simple expression which only contains a single exponent a, is
(6)
Usually H* cZ does not exceed H cz(O) by more than about 10 to 15%. Since experimentally
it is somewhat inconvenient to perform measurements at very low temperatures and
relatively high fields high accuracy extrapolations of H c2 (0) are impossible. For qualitative
discussions H c2(0) can often be replaced by H* c2, keeping in mind the small uncertainty
mentioned above.
It has been pointed out by Shulga et a1. (1998) that the non-local approach leading to
results as equation (5) does not cover all of the experimental results as e.g. the fact that the
reported anisotropy of H cZ of YNjzB2C is significantly smaller than that of LuNjzB2C but
its positive curvature is even larger. Therefore these authors analyzed H cZ(T) within the
microscopic Eliashberg theory of superconductivity (Eliashberg 1960). First they tried to
explain the experimental data on H c2(T) taking into account only an isotropic single-band
(ISB) effective electronic structure. The standard ISB approach (Carbotte 1990) describes
quantitatively the renormalization of the physical properties of metallic systems due to
electron-phonon (el-ph) interaction. The input parameters are the density of states N(EF),
the Fermi velocity VF, the impurity scattering rate Yimp, the Coulomb pseudopotential
JL* and the spectral function a(w)2F(w) of the el-ph interaction. These parameters can
be determined from experimental data on the normal-state low-temperature electronic
specific heat, the plasma frequency (from optical conductivity), H c2(0), T c and its isotope
exponent a, and the low-T resistivity p(O) or the Dingle temperature TD (from de Haas-
van Alphen experiments). The el-ph coupling constant Aph = 2 Jdwa(w)2F(w)/w has
been estimated to be Aph ~ 0.7 which indicates an intermediate coupling regime where
H c2(T) should be insensitive to details of a(w)2F(w). It was found that the ISB approach
cannot reproduce the experimental data on H c2(T) of LuNi2B2C and YNhB2C. In the
example of fig. 19 not only the positive curvature is absent in the ISB results but, even
more importantly, also the value H c2 (0) can only be achieved for the unrealistically
high scattering rate Yimp = 300 cm " ! whereas realistic values Yimp ~ 17 em"! result
in a too low ISB value of H c2(0). It should be noted that for weakly or moderately
anisotropic system in the clean limit as the nonmagnetic borocarbides under consideration,
the evaluation of a quantity Q'" H c2(0)(V 2F)FS/(l + Aph)2.4Tc2 (with (V 2F)FS as the Fermi
velocity averaged over the whole Fermi surface) is helpful to classify them as pronounced
multi-band superconductors (for details see Shulga and Drechsler 2001; Fuchs et al. 2001).
Superconductors with Q ~ 1 can be described by the isotropic single band model. A typical
example is Nb for which Q ~ 1.4 was obtained (Shulga and Drechsler 200 1). If the value of
Q departs significantly from I, a multi-band or unconventional description is required. This
Q-criterion is more faithful than the often used oversimplified phenomenological models.
For YNhB2C a value Q ~ 4 is obtained which is in accord with the above mentioned
numerical result showing that the experimental H c2 (T) data obtained for YNi2B2C can
not be described by the standard ISB approach.
Thus Shulga et al. (1998) extended their calculation considering two bands in the
Eliashberg analysis where one of the two Fermi velocities, VPI, is considerably smaller
than the Fermi surface average of vp. These slow electrons have a strong el-ph coupling
and are mainly responsible for the superconductivity. Noteworthy, slow electrons in
LuNhB2C and YNhB2C stem from nested regions on the Fermi surface whereas in the
nonsuperconducting compound LaNi2B2C there is no nesting and, consequently, a smaller
dispersion of VF (Rosner et al. 2001).
The dispersion of VF in YNhB2C has been confirmed by de Haas van Alphen
experiments (Goll et al. 1996). The values of H c2 (0) and of Teare reduced by the
presence of the faster electrons that have a moderate el-ph coupling only. On the other
hand, the positive curvature of H c2(T) is caused by interband coupling between the
slow and the fast electrons. In the example of fig. 19 the experimental H c2( T ) curve
could be well reproduced by taking the velocity ratio VF2/VFI ~ 4.5 and adjusting the
other input parameters of the two-band model to experimental data from the literature.
Figure 20 shows that, within the two-band model, the value H c2(0) as well as the degree
of positive curvature can be considerably varied by changing the scattering rate Yimp
(Shulga and Drechsler 2001; Fuchs et al. 2001). As expected, in the clean limit H c2
decreases with increasing Yimp. This prediction has been experimentally confirmed for
pseudoquatemary (Lu,Y)NhB2C compounds where an increase of substitutional disorder
results in a decrease of H c2(T) (see subsection 6.2, Fuchs et aI. 2001). On the other hand.
for larger values of Yimp (quasi-dirty limit) H c2 is predicted to increase with increasing
"tImp = 0
10
10
E-o
65
COl
:t ,,
, ,
0'
5 10 15 0 100 200 300
TIKI
Fig. 20. (a) Temperature dependence of the upper critical field calculated within a two-band model for several
impurity scattering rates Yimp (cm- I ). (b) calculated H c2(0)-VS.-Yimp curve illustrating the transition from the
clean to the dirty limit. Dotted line: H c2(0)-Yimp dependence in the dirty limit. (Drechsler et al. 2000; Fuchs
et al. 200 I).
Y imp. Consequently H c2 has a minimum at a certain value of Y imp if the other input
parameters of the two-band model are kept constant.
We conclude this subsection with several remarks on the interpretation of the anisotropy
of H c2. The largest in-plane anisotropy reported by Metlushko et al. (1997) coincides
with the direction of the nesting vector (0.55,0,0). Another manifestation of strong local
anisotropy effects is provided by deviations from the () (angular) dependence due to
anisotropic effective masses (Fermi velocities)
(7)
where y 2 = mc/mab and () measures the angle between the magnetic field and the
tetragonal c-axis (see e.g. Tinkham 1994). Due to the interaction with the nearly isotropic
weakly coupled electrons the strong anisotropy of the nested parts of the Fermi surface
is washed out. In fact, deviations from eq. (7), i.e. a stronger angular dependence near
() = tt /2, have been observed for YNhB2C by Winzer et al. (2002).
3.3. Magnetotransport
Investigations of the normal state magnetoresistance (MR) as well as the Hall effect
and the thermal conductivity in the normal and superconducting mixed states give an
important information about the electronic structure and the properties of vortex lattice
of the investigated materials.
3.3.1. Normal state magnetoresistance

The normal state magnetoresistance of the nonmagnetic compounds YNi2B2C and
LuNi2B2C, on poly- as well as single crystals, has been studied by several groups
(see, e.g., Takagi et al. 1994; Mazumdar et al. 1996; Rathnayaka et al. 1997; Fisher
MAGNETIC AND SUPERCONDUCTING PROPERTIES OF RNiz8ZC 235
et aI. 1997; Narozhnyi et al 1999a). It was found (Fisher et aI. 1997) that the in-plane
magnetoresistance (i.e. the current flowing perpendicular to the e axis), with the magnetic
field H parallel to the current, of a LuNhB2C single crystal for temperatures between 40
and 200 K is small, positive and is proportional to H 2 . For single crystalline YNhB2C
the in-plane magnetoresistance, with applied field parallel to the e axis, was found to
be quite large (6.5% for H = 45 kOe at T = 25 K) in comparison with normal metals
(Rathnayaka et al. 1997). It was observed that the resistance varies nearly as H 2 for low
fields, and seems to become linear with H at higher fields. At T = 15K the values of MR
are ~ 7.5% and 8% for H parallel and perpendicular, respectively, to the e axis indicating
a very small anisotropy in the magnetoresistance. The value (~7.3% for H = 45 kOe at
T = 20 K) as well as the field dependence of MR for a LuNhB2C single crystal were
found to be very similar to that observed for a YNhB2C single crystal (Rathnayaka
et aI. 1997). A similar value of MR has been reported for a YNi2B2C polycrystalline
sample (Mazumdar et aI. 1996). At the same time, for LuNhB2C polycrystalline samples
considerably larger values of the magnetoresistance were reported by two groups: 40% for
H = 80 kOe at T = 18 K (Takagi et aI. 1994) and 90% for H = 160 kOe at T = 20 K
(Narozhnyi et al. 1999a). A comparative study of the magnetoresistance of high quality
LuNi2B2C and YNi2B2C polycrystalline samples prepared under the same conditions
and having high residual resistance ratios (Narozhnyi et aI. 1999a) has revealed a clear
difference in the behaviour of their MR. For H = 160 kOe at T = 20 K MR is about
90% for LuNi2B2C and is nearly three times smaller for YNhB2C (~33%). A possible
reason for the very large positive MR in LuNhB2C and for the significantly larger MR
of the polycrystalline sample (Narozhnyi et aI. 1999a) compared to single crystal data
(Rathnayaka et aI. 1997) is the formation of open orbits on the Fermi surface of that
compound for H ..le. (When a magnetic field is applied, the resulting electron orbits may
be closed or open depending upon the topology of the Fermi surface.) The possibility of
the formation of open orbits for borocarbides was pointed out by Kim et aI. (1995), Lee
et al. (1994) and Rosner et al. (2001). It is well known (Lifshitz et aI. 1973) that open
orbits can lead to large values of MR ,...., H 2 , whereas closed orbits should give rise to
saturation of MR for large H. In that case, for polycrystals, the averaging of MR should
lead (Lifshitz et aI. 1973) to a practically linear dependence of the resistivity on H (so
called Kapitza's law). In accordance with this, the observed dependencies for LuNi2B2C
polycrystals are approximately linear (Narozhnyi et aI. 1999a). The MR(H) dependence
for polycrystals, in the case of open orbits for some directions of H, should be stronger
than that observed for single crystals for H lie where only closed orbits could be expected.
Therefore, the significantly larger MR found for the LuNi2B2C polycrystals, in comparison
with that observed for the single crystal for Hlle, can be considered as an indication for
the open-orbits formation in LuNi2B2C for H ..le. For YNi2B2C a substantially smaller
MR has been seen (Mazumdar et al. 1996; Rathnayaka et al. 1997). The differences in
the properties of these very similar compounds should be connected with a difference
between their electronic structure. As has been noted by Lee et al. (1994) the Fermi surface
topology of the borocarbides is very sensitive to the position of the Fermi level, which may
be slightly different for the two cases, Lu and Y, due to, e.g., different lattice constants.
Recently the difference in the Fermi surface topology between LuNi2B2C and YNhB2C
has been discussed in more detail by Rosner et al. (200 I). From the reported results the
formation of open orbits seems to be easier in case of LuNhB2C in comparison with

YNhB2C, but a more careful investigation is necessary for a better understanding of the
observed phenomenon.
It should be also noted that a change of sign of the normal state magnetoresistance from
positive at low temperatures to negative at T ~ 80 K when H = 40 kOe was reported for
YNi2B2C single crystals (Chu et al. 2000). As mentioned above, only positive MR was
observed for LuNi2B2C single crystals for temperatures between 40 and 200 K (Fisher
et al. 1997). The sign reversal was interpreted by Chu et al. (2000) as an indication of the
presence of magnetically related scattering, which could result from suppression of spin
fluctuations.
3.3.2. The Hall effect

The Hall effect has been studied only for some borocarbides. The normal state Hall
coefficients RH were found to be negative and only weakly temperature dependent for
polycrystalline borocarbides based on R = Y (Fisher et al. 1995; Narozhnyi et al. 1996;
MandaI and Winzer 1997), La (Fisher et al. 1995), Ho (Fisher et al. 1995; MandaI and
Winzer 1997) and Gd (MandaI and Winzer 1997). A negative but strongly temperature
dependent RH was found for the heavy-fermion compound YbNhB2C (Narozhnyi et al.
1999b).
A comparative study of the Hall effect for nonmagnetic YNhB2C and LuNhB2C
borocarbides has revealed a pronounced difference in the behaviour of these two closely
related compounds in the normal state (Narozhnyi et al. 1999a; Freudenberger et al.
1999a). Weakly temperature dependent low field Hall coefficients were observed for both
compounds. At the same time the RH (T) curve obtained for LuNi2B2C at H = 50 kOe
exhibits a pronounced temperature dependence below 60 K (see fig. 21) connected with a
nonlinearity found for the field dependence of the Hall resistivity Pxy(H) at low T. This
nonlinearity is clearly seen for LuNhB2C in fig. 22(a, b) where the Pxy(H) dependencies
for LuNi2B2C and YNjzB2C are shown in the normal and in the mixed states. Linear
Pxy(H) dependencies extrapolated from the low H region are also shown in fig. 22(a, b)
by dashed lines. The deviation from linear Pxy(H) dependence increases with lowering
temperature. It should be underlined that no nonlinearity in the Pxy(H) dependence is
<u 0.6
o
E
~ 0.4 .... ~ 0
~~----I
~ 0.2
H=50 kOe
ocr.0.0 L.-_ _
- ~'-- _ _-'--,,----_ _-::-'
o 100 200 300
T (K)
Fig. 21. Absolute value of the Hall coefficient IRHI (obtained at H = 50 kOe) as a function of temperature T for
polycrystalline LuNi282C and YNi282C samples. Dotted line - linear extrapolation of high temperature data
for LuNi282C. Solid lines are guides for the eye (Narozhnyi et al. 1999a).
E
(J
0.1
(e)
f \
jj Ipxyl- (Plll
0.01 LuNi B C
2 2
1/
ff __P=2·0 T=9K
:: -0- T=10K
,: --- r-n K
0.1 1 10
erEt"10K1- /\
eO'~20K YNi B C 4O,IOK..,c'
E 0.1 ~
u p
0
E
p.. i
E ~~0.2 2~ ~ ()~
~
0 0.1 9,"0
'0
4.5K
50 100 1 5 0 "
•
2
.J'"'j
1
0.= 25
H (1<00)
30
II
0.00.1<'
Pxy - P",
P=2.1
3. H (kOe) 'l T (b) (d)
Ai • T 0.01
cf 40K "'1 T - . - T=8K
I ~/12 1
10 h=8K - - T=10K
0.0 ~'14 • ~ ;
a 10 20 30 40 50 0.1 1 10
H (kOe) P", (jUl em)
Fig. 22. (a. b) Absolute value of the Hall resistivity IPxyl vs. magnetic field H for polycrystalline LuNi2B2C
(a) and YNi2B2C (b). The dashed lines are low-field asymptotes to the normal state curves. The insets show the
results for H up to 160 kOe. (c. d) Hall resistivity IPxyl vs. longitudinal resistivity Pxx for LuNi2B2C (c) and
YNi2B2C (d). In the insets !Pxy! and Pxx vs. H are simultaneously shown for T = 10 K (after Narozhnyi et aI.
I999a).
observed for YNi2B2C (see the inset of fig. 22b). No indications of nonlinear Pxy(H)
dependencies have been observed also for Ho-, Gd-, La- and Yb-based borocarbides.
(Fisher et al. 1995; Mandai and Winzer 1997; Narozhnyi et al. 1999b).
The values of the Hall coefficient reported for LuNizB2C and YNizB2C (Narozhnyi
et al. 1999a) are comparable with those obtained for YNi2B2C (Fisher et al. 1995; Mandai
and Winzer 1997) but they are about five times (LuNi2B2C) or ten times (YNizB2C)
smaller than the value resulting from band structure calculations (Pickett and Singh 1994)
for LuNi2B2C (3 x 10-9 m 3 C- I = 3 x 10-IIQcmOe- 1) . The reason for these deviations
is not clear so far. Possibly the constant relaxation time approximation used by Pickett and
Singh (1994) is not valid for LuNhB2C having several bands crossing the Fermi level. It
is also not excluded that correlation effects have to be taken into account. The estimation
of the carrier density from the RH value at T = 300 K. by using a single band model
which is a rough approximation. gives 1.5 and 2.4 carriers per unit cell for LuNizB2C and
YNhB2C, respectively.
The Hall effect in the superconducting mixed state has been investigated only for
LuNi2B2C and YNizB2C (Narozhnyi et al. 1999a; Freudenberger et a1. 1999a). The Hall
resistivity Pxy of both compounds is negative in the mixed as well as in the normal state
and has no sign reversal below T c- contrary to the behaviour of high- T c superconductors
(Galffy and Zirngiebl 1988). In the mixed state the behaviour of the both systems is quite
similar, see fig. 22 (Narozhnyi et al. 1999a). Below T c in low fields it was shown that
Pxy = 0, see the Pxy(H) curves obtained at, e.g., T = 10 K (fig. 22(a, bj), At higher fields
(in the region close to the resistive superconducting transition) the Hall resistivity increases
in its absolute value and gradually reaches the Pxy(H) curve obtained in the normal state
at temperatures slightly above T c. The Hall resistivity curve Pxy(H) in the mixed state
shifts with increasing temperature to lower magnetic fields similar to the behaviour usually
observed for the longitudinal resistivity curve Pxx(H).
In the mixed state two regions concerning the behaviour of Pxy and Pxx can be
distinguished. At low magnetic fields both Pxx and Pxy vanish. For higher fields it is clearly
seen that the scaling behaviour IPxy I = Apxxf3 holds for both compounds (see fig. 22(c, dj).
The value of fJ is 2.0 ± 0.1 and 2.1 ± 0.1 for Lu- and V-based samples, respectively. It
decreases to 1.7 ± 0.1 for unannealed LuNi2B2C sample having an approximately one
order of magnitude higher resistivity at T = 17 K. This may be connected with an increase
of the pinning strength due to the considerably larger concentration of defects leading to
a larger resistivity in this sample. The decrease of the scaling exponent with increasing
pinning strength was obtained in the WDT theory (Wang et al. 1994), taking into account
the backftow current of vortices due to the effects of pinning. Another manifestation of the
pinning effects, predicted by the WDT model. can be seen in the insets of fig. 22(c, d) where
the Pxy(H) and Pxx(H) curves in the superconducting transition region are simultaneously
shown. For decreasing fields, Pxx vanishes at definitely lower values of H than Ipxy I as it
was pointed out by WDT. From these results it is clear, that pinning effects are considerably
important for the mixed state HaIl effect in the investigated borocarbides.
3.3.3. Thermal conductivity

Thermal conductivity was measured for YNhB2C and LuNhB2C (Sera et al. 1996;
Boaknin et al. 2000, 2001) as well as for HoNi2B2C and DyNhB2C (Sera et al. 1996;
Hennings et al. 200 I) single crystals. It was found that for all borocarbides investigated so
far the thermal conductivity in the entire temperature range from T c to room temperature
is dominated by electrons (Sera et aI. 1996; Boaknin et al. 2000; Hennings et al. 200 I).
Below T c the phonon contribution increases considerably with decreasing temperature
and below 5 K the thermal conductivity is mainly due to phonons whose mean free path is
limited mainly by sample boundaries. An unusually high phonon peak centered at T ~ 5 K
was observed for LuNi2B2C (Boaknin et al. 2000, see fig. 23). A similar behaviour of
the thermal conductivity, but with an about three times smaller value of the peak, was
reported for YNhB2C (Sera et al. 1996). For magnetic RNi2B2C (R = Ho and Dy) the
thermal conductivity exhibits a marked loss of scattering at TN (Sera et al. 1996; Hennings
et al. 200 I). Both systems do not show a phonon enhancement below T c- as reported for
nonmagnetic borocarbides.
Results on the thermal conductivity in the superconducting mixed state have been
reported for LuNi2B2C for temperatures down to 70 mK (T c/2oo) and magnetic fields
from H = =
0 to above H c2 70 kOe (Boaknin et al. 200 I, see fig. 24). It was found
that as soon as vortices enter the sample, the thermal conductivity at T -+ 0 grows
rapidly, showing unambiguously that delocalized quasiparticles are present even at the
MAGNETIC ANDSUPERCONDUCTING PROPERTIES OF RNi2B2C 239
200 r. T~ ...
fi
~150
......
: \./'
~
Ii 100
it
50
OL-_........,~ ..........~""'-~ .........._--'

o 5 10 15 20 25
T(K)
Fig. 23. Thermal conductivity of LuNi2B2C vs. temperature for a heat current in the basal plane (a-axis). Note
the change of slope at T c (with an arrow showing the resistive transition) and the large phonon peak at 5 K
(Boaknin et al. 2(00).
1.0 ......................... _.. _ _ -- ~
./'/0
0.8 LUNi282~// 0
I-
oJ 0.6 ../.~~ ./
I-
--
~.
0.4
0.2
• ~ ..D'
..../
../
.ci
j
i
~
Nb
......rr···
0.0 ...~--L._lQQl"""--=---L..~........J'--"'--...L----'---'
0.0 0.2 0.4 0.6 0.8 1.0 1.2
H IHc2
Fig. 24. Magnetic field dependence of the electronic thermal conductivity at T --+ O. normalized to its value at
H c2. Circles are for LuNi2 B2C. squares for UPt3 and diamonds for Nb. Note the qualitative difference between
the activated thermal conductivity of the s-wave superconductor Nb and the roughly linear growth seen in UPt3.
a superconductor with a line of nodes (Boaknin et al. 200 I).
lowest energies. The electronic transport grows with the magnetic field similar to the
behaviour of the heavy fermion superconductor UPt3. for which lines of nodes in the
gap were found. and very different from the exponential dependence of electronic thermal
conductivity characteristic of s-wave superconductors. It was concluded by Boaknin et al.
(2001) that the gap function of LuNi2B2C must have nodes or at least very deep minima.
The estimation of the gap anisotropy has given a value of 10 (at least). unprecedented in
phonon-induced superconductivity. An even larger gap anisotropy of about 100 has been
reported by Izawa et al. (2002) for YNi2B2C. The thermal conductivity will be discussed
together with the specific heat of borocarbides in the mixed state in section 6.
The behaviour of the thermopower of the borocarbides will not be considered in this
paper. The discussion of this particular problem can be found in the review article of Naugle
et al. (1999).
3.4. Characteristics of superconducting YNi282C and LuNi282C

Here we will summarize. from the previous subsections as well as from literature. some
typical properties and representative parameters (see table 6) of the superconducting state
of YNi2B2C and LuNhB2C where completeness is not attempted. These materials are
usually clean-limit type II superconductors. However by substitutional disorder on the rare
earth site in (Y.Lu)NhB2C or on the transition-metal site in Lu(Ni.CohB2C the residual
resistance ratio RRR = p(3oo K)/ p(T c ) . where p(T) is the normal state resistivity. and
the mean free path I of the electrons in the normal state can be considerably reduced
TABLE 6
Property LuNi2B2C
r; (K) 15.5 [I) 16.5 [I)

IJ.OH c2 (T) II [2) 7.5 [2).9 (6)
lJ.oHcl (mT) 30 [3]. 8 [5] 30 [3]. 80 [6)
IJ.OH c (T) 0.23 [3) 0.31 [3].0.54 [6)
~(O) (run) 8 [4).10 [5).5.5 [12) 6 [4.6]
A(O) (nm) 120 [4). 350 [5J 130 [4]. 71 [6)
K(O) IS (4). 35 [5) 22 [4). 12 (6)
/).C (rnl/mol K) 460(3) 695 [3)
r (mJlmol K2 ) 18.5 [3) 19.5 [3]. 35 (6)
sctvr; 1.77 [3) 2.21 [3)
N(EF) (l/eV) 4.31 [7) 4.05 (7)
VF (105 m1s) 0.85 ... 3.8 [2).4.2 [12) 0.96 ... 3.7 [2).4.2 [12]
Aph 0.9 [3]. 1.02 [IOJ 0.75 [3). 1.22 [10]
IJ.* "::0.1 (2).0.13110) "::0.1 (2).0.13[10)
90(K) 490 (3) 360[3]
/).(0) (meV) 2.2 (8) 2.2 (8)
/).(O)/kBT c 2.1 [3). 1.7 (8) 2.2 [3). 1.7 [8)
1 (nm) 33 [II) 70[6).29[11)
RRR 43 (2) 27 [21.44 [9)
To (K) 2.8 (2) 4 (2)
T c - superconducting transition temperature. H c2 - upper critical field at T = O. H c I - lower critical field

at T = O. H c - thermodynamical critical field at T = O. ~(O) - coherence length at T = O. A(O) - penetration
= =
depth at T O. K(O) Ginzburg-Landau parameter at T O. /).C - specific heat jump at T e • y - normal state
Sommerfeld constant. N(EF) - density of state at the Fermi level in states per eV and unit cell. VF - Fermi
velocity. Aph - electron-phonon coupling constant. IJ. * - Coulomb pseudopotential, 8D - Debye temp.• /).(0)
- quasiparticle energy gap at T = 0.1- mean free path. RRR - residual resistance ratio p(300 K)/ p(T ":: T c ).
To - Dingle temperature.
[I) Cava et aI. (l994b). [2) Shulga et aI. (1998). [3) Michor et aI. (1995). (4) Hilscher and Michor (1999). [5)
Prozorov et aI. (1994). [6) Takagi et aI. (1994). (7) Divis et aI. (2000. [8) Ekino et aI. (1996). [9) G. Fuchs priv,
comm.• [10) Manalo et aI. (2001). [II) Du Mar et aI. (1998). [12) Heinecke and Winzer (1995).
MAGNETICAND SUPERCONDUCfING PROPERTIES OF RNi2B2C 241
moving the systems towards dirty-limit superconductivity (Freudenberger et al. 1998a;

Fuchs et al. 2001; Schmidt and Braun 1997; Cheon et al. 1998). They have a three-
dimensional globally isotropic electronic structure but due to the complicated shape of the
Fermi surface there is a strong dispersion in the Fermi velocity. This results in a positive
curvature of the function H c2(T) near T c which can be formally described by non-local
corrections to the phenomenological theory of Ginzburg, Landau and Abrikosov or, in a
detailed analysis within the Eliashberg theory, by taking into account at least a two-band
electronic structure (Shulga et a1. 1998). According to the two-band model the degree of
positive curvature of H c2 (T) decreases if the materials become generally more dirty i.e.
the interband scattering rate increases. This prediction has been confirmed by experiments
on the pseudoquaternary (Y,Lu)NhB2C compounds. The anisotropy of the Fermi surface
also causes anisotropy in H c2 (T) and in ~ (0) (Metlushko et al. 1997; Takagi et al. 1997).
The values of the BCS ratios llC/yT c and Il(O)/kBT c and of Aph indicate moderate
electron-phonon coupling. However the Eliashberg analysis of Shulga et al. (1998) and
Shulga and Drechsler (200 1) showed that this statement has to be modified as the different
groups of electrons have different strengths of coupling: strong, intermediate and weak
where the strongly coupled (nested) electrons are mainly responsible for superconductivity
but the properties of the superconducting state are considerably affected by interaction
of the strongly coupled with moderately coupled electrons. The quaternary borocarbides
have been classified as conventional s-wave superconductors with a strongly anisotropic
energy gap (see e.g. Boaknin et a1. 2001; Andreone et al. 2001). The superconductivity
in YNhB2C and LuNi2B2C is far from being fully understood. In their future analysis
the other non-magnetic borocarbide superconductors from table 2 should be included for
comparison.
4. Magnetic and superconducting properties of RNi2B2C
In this section RNhB2C compounds will be considered where R are 4f elements with an
incompletely filled f-shell, which are sometimes entitled magnetic R-elements. EuNhB2C
does not exist and PmNi2B2C is not investigated because Pm has no stable isotope. From
fig. 9 it can be clearly seen that the 4f-electrons must have a considerable influence on
the superconductivity in RNhB2C because, for spacings in the crystal structure which
are comparable to those for non-magnetic R-elements, the transition temperature T c of
RNi2B2C with magnetic R-elements is considerably smaller or the superconductivity
is even completely suppressed. The calculated density of states N(EF) of RNhB2C
superconductors has nearly the same values for magnetic R-elements (see table 7) as
for non-magnetic R-elements (Divis et a1. 2000). In order to investigate the 4f-electron
magnetism in these compounds various measurements have been performed such as elastic
(Skanthakumar and Lynn 1999) and inelastic (Gasser et a1. 1997) neutron scattering, muon-
spin relaxation (Le et a1. 1997), Mossbauer effect (Felner 2001), x-ray resonant exchange
scattering (Detlefs et a1. 1997b), magnetization and magnetic susceptibility (Cho 1998),
resistivity and magnetoresistance (Fisher et al. 1997), specific heat (Hilscher and Michor
1999) etc where only one representative reference is given in each case. Results of such
experiments are summarized in figs 8 and 9 and in table 7. The relatively large values of
TABLE 7
Type of the ground state of RNi2 B2C compounds
Compound Ground state TN (K) To (K) N(EF)
CeNi2B2C Mixed valence [16,17) (SC [I)) (0.1 [I]) 2.4 (32)
PrNi2B2C AFM(7) 4.0(7) 2.00 [20J
NdNi2B2C AFM [7,24) 4.8 (25) 2.10 [20J
SmNi2B2C AFM [24J 9.8 [31,33) 2.97 [20J
GdNi2B2C SOW (26) 19.4 [16,25,26,30) 3.57 [20J
TbNi2B2C SOW [7,14]IWFM [14,19J 15.0 [7,14J 4.11 [20J
Oy Ni2B2C AFM [2,6,7J/SC [2,3] 11.0 [2,6) 6.2 [2), 6.4 (3) 4.16 [20J
HoNi2B2C AFM [8,9]1SC [4,5) 5 ... 8 [8,9,10) 8 (4), 7.5 [5J 4.04 (20)
ErNi2B2C SOW [lI,12J (WFM [21,22)) SC [4,5J 6 [27J...6.8 [11,12) 10.5 [4,5,27) 4.32 (20)
TrnNi2B2C SOW [7,18,29J/SC [4,5J 1.5 [28.13.7J II [4,5) 4.02 (20)
YbNi2B2C Heavy fermion [23,15)
SC - superconducting, AFM - commensurate antiferromagnet structure, SOW - incommensurate antiferro-

magnet order (spin density wave), WFM - weak ferromagnetism; TN - magnetic ordering temperature, T o-
superconducting transition temperature and N (E F) - density of states at the Fermi level.
[I) El Massalami et aI. (1998a), (2) Cho et al, (1995a), (3) Tomy et al. (1995), (4) Cava et al. (1994b), (5) Eisaki
et aI. (1994), (6) Dervenagas et aI. (1995a), (7) Lynn et al. (1997), (8] Grigereit et aI. (1994), (9) Goldman et al.
(1994), (10) Canfield et aI. (1994), [Il) Sinha et al. (1995), (12) Zarestki et al. (1995), (13) Cho et al. (1995b),
[14J Dervenagas et al. (1996), [l5J Yatskar et al. (1996), [16J Gupta et al. (1995), [17J Alleno et al. (1995a), (18)
Chang et aI. (1996b), [I9J Cho et aI. (l996a), (20) Divis et aI. (2000), (21) Canfield et al. (1996), [22J Kawano
et aI. (1999), {23J Ohar et al, (1996), {24J Detlefs et al, (1997b), {25] Nagarajan et al. (1995), (26J Detlefs et al.
(1996), [27] Cho et aI. (1995c), [28J Movshovich et al. (1994), [29] Sternlieb et aI. (1997), (30) EI Massalami
et al. (1995c), (31) Prassides et al. (1995), [32] Divis (2001), [33] Hossain et al. (1995).
the magnetic ordering temperature and its approximate scaling with the de Gennes factor
point to a strong interaction between the R magnetic moments which is clearly dominated
by RKKY-type exchange rather than by dipolar interaction. Usually these compounds
are antiferromagnetically ordered where the magnetic structure, in particular the local
direction of the R magnetic moments, is the result of a competition between the exchange
interaction and crystalline electric fields (which will be discussed in subsection 4.1). In
some cases (R = Tb and Er) weak ferromagnetism has been observed i.e. a small net
magnetic moment as a result of some canting of the antiferromagnetically ordered R
magnetic moments. In other cases (e.g. R = Ho, see subsection 4.9), besides the ground-
state magnetic structure further magnetic structures occur at elevated temperatures. The
exchange interaction between the 4f electrons and the conduction electrons in RNi2B2C
seems not to induce Ni magnetic moments, i.e. as in the case of non-magnetic R -elements,
no Ni magnetic moments have been detected in these compounds so far (Skanthakumar
and Lynn 1999).
As an interesting result, fig. 25 shows that the quadrupole splitting ~EQ observed
by Mossbauer spectroscopy on the Ni site (diluted by 57Fe) is strongly correlated
with the B-Ni-B bonding angle which is supposed to have a strong influence on the
superconducting transition temperature To via the coupling to high-frequency phonons
connected with boron (Mattheis et al. 1994). Although the electronic structure as well as
superconductivity and magnetism in RNi2B2C are three-dimensional phenomena different
types of large anisotropy have been reported. Thus the isomer shift in DyNi2B2C is
0.6
"iii'
0.5
0.4
~~ •
Nd
Gel
0
Tb
E ~Ho
.§. 0.3 E'Tb
-0 Dy
W Ho
<:I 0.2
0.1 0 RNIBC
0.0
• RNI1l2C
1.35 1.40 1.45 1.50 1.55
c'la
Fig. 25. Room temperature quadrupole splitting I~EQI observed in various RNiBC and RNi2B2C compounds
as a function of a structural parameter (e'la) which is a measure of the B-Ni-B bonding angle in these compounds
(after Baggio-Saitovich et aI. 2001).
significantly smaller than in metallic Dy or DyM2Sh (Sanchez et al. 1996) which has
been assigned to relatively strong covalent bonds between the Rand C atoms. A strong
anisotropy concerning the dependence of the exchange interaction between the R magnetic
moments on their position in the crystal structure has been reported by Cho et al. (1996b)
who derived, from magnetization data, a ratio of the exchange constants between Ho
magnetic moments in HoNi2B2C for the line connecting the two Ho atoms being parallel
and perpendicular to the tetragonal c-axis, Jll/h, of nearly 10. These authors used the
misleading terms exchange anisotropy and anisotropic exchange interaction. One has to
be careful in using such notations: exchange anisotropy, also called exchange biasing, is a
totally different phenomenon discovered by Meiklejohn and Bean (1957) and anisotropic
exchange interaction is used for cases where the interaction depends on the direction of the
two interacting moments with respect to the lattice (see e.g. in Yosida 1996). The exchange
interaction considered by Cho et al. (l996b) is, however, isotropic.
In subsection 4.1 we will consider the influence of crystalline electric fields on the
magnetic properties and in the following subsections we will briefly report on the behaviour
of the individual RNjzB2C compounds from R = Ce to Vb.
4.1. Magnetic order and the crystalline electric field

The ground state magnetic structures of some borocarbides, including all magnetic
RNhB2C superconductors are shown in fig. 26. These structures are characterized by
the value of the ordered R magnetic moment (JL) and its direction with respect to the
crystallographic axes as well as to the neighboring R magnetic moments. A further
characteristic property of these structures is their propagation wave vector q which may
be commensurate or incommensurate with respect to the lattice structure. The value of (JL)
is the result of the interplay between the single ion anisotropy due to crystalline electric
fields (CEF) and the RKKY exchange interaction between the R 3+ ions.
~ ~
, .-- - .. .> »: »: v V
Jt!'" ~ .- t
,.
./' ~
, -'" -,./ ./' ./ v V'"""
----.q
----. q -- -- ..
q
(3) Pr, Dy, Ho (b) Er (c) Tb (d)Tm
Fig. 26. Different types of magnetic structures in the ground state of RNi2B2C compounds. (a) For R = Pr,
Dy or Ho commensurate antiferromagnetic structure. (b. c and d): for R = Er, Tb and Tm incommensurate
antiferromagnetic structures (spin density waves) with a propagation vector q in the (a. b)-plane. (b) Moments in
the (a. b) plane and 1- to q. (c) Moments in the (a. b) plane and II q. (d) Moments lie and 1- to q (after Lynn et aI.
1997).
If the CEF interaction is much stronger than the exchange interaction, the magnetic
subsystem can be described, in zero approximation, by the single-ion CEF quantum states.
The energy of the (21 + I) fold degenerated Hund's free-ion ground state characterized by
the total angular momentum 1 wil1 split into CEF energy levels. According to a theorem
of Kramers (1930), in a system containing an odd number of electrons, al1 energy levels
wil1 have an even degeneracy. Since Ce3+, Nd 3+ , Sm3+, Gd3+ , Dy 3+ , Er 3+ and Yb3+
have an odd number of electrons (see table 8), the CEF ground state of these so cal1ed
Kramers ions is, at least, two fold degenerated and consequently they will carry a magnetic
moment i.e. this ground state will split in an external magnetic field. Hybridization and
correlation effects can suppress those 4f magnetic moments as, in particular, observed for
R = Ce or Yb i.e. for one electron or hole in the free R 3+4f shel1 (see tables 7 and 8).
On the other hand the non-Kramers ions Pr, Tb, Ho and Tm contain an even number
of electrons and consequently their CEF states can be singlet states which of course are
nonmagnetic. For R = Pr in RNhB2C with point symmetry of D4h at the R-site, indeed,
the CEF ground state level is a singlet whereas that for R = Tm it is a doublet (Rotter et al.
200 I). For R = Ho and Tb the situation is more complicated because singlets as well as
doublets are close to the CEF ground state level. As can be seen in table 8, the RNhB2C
compounds show a staggered magnetic moment (J..L) for al1 4f elements but Ce and Yb,
Consequently, the moment (J..L) in PrNi2B2C, and probably in HoNhB2C, is induced due
to mixing of the CEF ground state with higher states through RKKY interaction. The local
directions of the R magnetic moments are governed by the CEF (with the exception of
the case R = Gd, see subsection 4.6). There are two types of magnetic structures with the
moments either parallel to the c axis (R = Tm, Sm; table 8) or perpendicular to c. This
different behaviour can be explained, in most cases, by second order CEF effects. The
CEF are usually characterized by the CEF coefficients A nm (Hutchings 1964) which are
TABLE 8
Properties of free R 3+ ions
Hund's rules
quantum numbers
R3+ n S L J g DG aJ ILp ILs (IL) lie
(10- 2) [ILBI [ILBI [ILBI J.e
Ce I 1/2 3 5/2 6/7 0.18 -5.71 2.5 2.1 0

Pr 2 1 5 4 4/5 0.80 -2.10 3.6 3.2 0.81 J.
Nd 3 3/2 6 9/2 8/11 1.8 -0.64 3.6 3.3 2.10 J.
Sm 5 5/2 5 5/2 2/7 4.56 4.13 0.85 0.7 ? II
Gd 7 7/2 0 7/2 2 15.8 0 7.9 7 7 J.. II
Tb 8 3 3 6 3/2 10.5 -1.01 9.7 9 7.8 J.
Dy 9 5/2 5 15/2 4/3 7.1 -0.64 10.7 10 8.5 J.
Ho 10 2 6 8 5/4 4.5 -0.22 10.6 10 8.6 J.
Er II 3/2 6 15/2 6/5 2.6 0.25 9.6 9 7.2 J.
Tm 12 I 5 6 7/6 1.2 1.01 7.6 7 3.4 1/
Vb 13 1/2 3 7/2 8/7 0.32 3.17 4.5 4 0
Lu 14 0 0 0 0 0 0 0 0
n - number of 4f electrons. S - total spin, L - total orbital angular momentum, J - total angular momentum,
g - Lande factor, DG - de Gennes factor, a J - second Stevens coefficient, ILp - paramagnetic moment, ILs
- saturation moment; (IL) - staggered magnetic moment in RNi2B2C where the orientation of the moments
with respect to the c-axis is given in the last column (Lynn et aI. 1997; Skanthakumar and Lynn 1999; Detlefs
et aI. 1996, 1997b; EI-Hagary et aI. 2oooa; Allenspach and Gasser 2000).
approximately the same in all RNi2B2C compounds (Gasser et al. 1996). In lowest non-
vanishing order the interaction of an R ion with the CEF is proportional to aJA20 with
aJ as the second order Stevens factor which roughly speaking characterizes the shape of
the 4f charge density for the R3+ ion. Table 8 shows that for all R 3+ ions with aJ < 0 the
moments are within the (a,b)-plane, for aJ > 0 the moments are parallel to the c axis, with
the exception of Er. This case is more complicated and was discussed in detail by Cho et al.
(1995c): in that case higher order CEF coefficients can not be neglected. On the other hand,
the susceptibility X at higher temperatures is known to be determined by A20 and aJ only.
Measurements of X on ErNi2B2C single crystals at higher temperatures gave results which
are compatible with table 8 i.e, X measured perpendicular to c is smaller than measured
parallel to c (X.l < Xp). Only at temperatures below about 150 K Cho et al. (l995c) found
X p < X.l which is interpreted as being due to the influence of higher order CEF terms and
is in accordance with the structure of fig. 26b.
The experimental values (J.t) of the ordered R magnetic moments in RNjzB2C as
well as their preferred directions, summarized in table 8, could be well reproduced
by a self-consistent mean-field approach taking into account some general assumptions
on the RKKY interaction and experimental CEF-data (Gasser et al. 1996; Gasser and
Allenspach 2001; Rotter et al. 2001). The direction of the ordered R magnetic moments
with respect to their R neighbors in the RNjzB2C lattice is dominated by the RKKY
interaction and, in consideration of the magnetically easy axes, they usually are parallel
or anti parallel. However in some cases small deviations from the strongly parallel or
antiparallel alignment of neighbors have been reported. Examples are the spiral structure
and the a-axis-modulated structure observed in HoNjzB2C at elevated temperatures (see
246 K.-H. MULLER et a1.
10.8 r-.,....rT".".-rr--,-1r"'T",..........,~----.- ...

10.6 ••
.:( 10.4
o 10.2 c c
10.0
• •
3.8
.~ 3.7
3.6
3.5
0.82 Vb Er V Tb Ce4 ' Nd Ce" La 1.10

Lu Tm HoDy Gd 8m Pr
Lanthanide Radius [A]
Fig. 27. Lattice constants a and c of RNi2B2C for various elements R versus the ionic radii of R 3+ ions. In the
case of R = Ce (open symbols), both the radii of Ce 3+ and Ce 4 + do not fit the curve observed for the other rare
earths (Siegrist et al. 1994b).
subsection 4.9.1) or the weak ferromagnetism in TbNhB2C (subsection 4.7) and in

ErNhB2C (subsection 4.10). Whether the magnetic long-range order is commensurate or
incommensurate is the result of the competition between CEF and RKKY interactions.
Incommensurability is a typical effect of the RKKY interaction and. as expected.
it occurs in the magnetic structures reported for GdNi2B2C (see subsection 4.6).
However incommensurate magnetic structures have been observed also for other RNi2B2C
compounds in their ground states or metamagnetic states (see fig. 26 and table 8 as
well as the following subsections). Since the RKKY interaction is mediated by the
conduction electrons the incommensurate magnetization structures depend on details of the
electronic structure. This is the reason why the nesting vector T ~ (0.55. O.0) discussed in
subsection 3.1 manifests itself as a modulation wave vector of different incommensurate
structures as found in various RNi2B2C compounds (see the following subsections).
4.2. CeNi2B2C
The lattice parameters of CeNi2B2C do not fit the linear relationship found for the other
RNizB2C compounds (see fig. 27). Neither the trivalent nor the tetravalent radius for
Ce falls on the corresponding straight lines. The approximate valence Ce 3.75+ obtained
by interpolation reveals a (homogeneously) mixed or intermediate valence of cerium in
this compound (Siegrist et a1. I994a. 1994b ). X-ray absorption spectroscopy at the Ce-
LIII edge confirms that the Ce ions are in an intermediate-valence state (Alleno et a1.
1995a). Measurements of magnetic susceptibility and specific heat as well as neutron
diffraction experiments showed that Ce is essentially nonmagnetic and there are no
magnetic transitions in CeNi2B2C although. as discussed in subsection 4.1. Ce 3+ is a
Kramers ion and. therefore. it has a magnetic CEF ground state (Alleno et a1. 1995a;
MAGNETIC AND SUPERCONDUCTING PROPERTIES OF RNi282C 247
20
•• • CePt t .aAuo.6BzC
•o~ceRhaBzC
-;r
..:
15
A CeNlaBaC
~ • CePdzBzC
~ 10
Ii
"b
:;:.
H 5
0
0 100 200 300
T (I<)
Fig. 28. The magnetic susceptibility X versus temperature for various CeT282C compounds, indicating zero
magnetic moment for tbe smaller T atoms Ni and Pd but finite paramagnetic moment for the larger T atoms Co.
Rh and (PI,Au) (after Caner et al. 1995).
Carter et al. 1995; Lynn et al. 1997). Interestingly, for CeT2B2C with T = Ni, Co, Rh,
Pd, (Pt.Au) it was found that the behaviour of Ce changes from nonmagnetic to magnetic
with increasing T d-ion size (Carter et al. 1995). As shown in fig. 28, in the large-size
limit, CePtI.5Auo.sB2C has a paramagnetic moment of 2.6JLB, which is close to the Ce 3+
free-ion Hunds-rule value (see table 8). On the other hand Ce is essentially nonmagnetic
for T = Ni and Pd. From the variation of T c as a function of the lattice constant a one
would expect CeNhB2C to be superconducting (see fig. 9). The change of electronic
structure caused by the variation of lattice parameters and/or the distortion of the B-Ni-B
tetrahedral angle may be one reason for the absence of superconductivity for the light rare
earth RNhB2C compounds, including the case R = Ce (Siegrist et al. 1994b; Mattheiss
et al. 1994). Probably these phenomena cause the reduced density of states at the Fermi
level N(EF) (designated in table 7) and absence of Fermi surface nesting. The value of
N(EF) ofCeNhB2C in table 7 was calculated assuming Ce to be trivalent, i.e. neglecting
hybridization of the 4f electrons and, consequently, intermediate valence. The influence of
the latter effects on the suppression of superconductivity in CeNi2B2C has not yet been
theoretically analyzed.
Based on ac magnetic susceptibility and specific heat measurements, EI Massalami
et al. (l998a) claimed that they observed superconductivity in CeNhB2C with T c of
about 0.1 K. If this will be confirmed the mechanisms for superconductivity in the whole
borocarbide series should be reconsidered.
4.3. PrNi2B2C
The lattice parameters of PrNi2B2C (Siegrist et al. 1994b, see fig. 29) fit well the linear
relationship derived for the other rare earth based borocarbides (except CeNhB2C).
Therefore the valence state of Pr in PrNi2B2C is close to 3+. The magnetic susceptibility
0.2 ~~----;--;--r=====;]
SCR (a) 12 H II [110] SCA
........
o
H II [110] _ ••••••••
I- •
..'.'
E AVR u 8 '.
'. ....
~0.1
~
u
.
~
~ 4 T(K) 8
°O!L-~-----:-':~~---::'-::------"--'
o.o~~~~~~~ ....
15 T(K) 30
1.5
200 (b) ...........
SCR .....
,PrNi 2B2C 1 ~trNi2B2C
~
"&:YbNI2~2~~:~
S .. / !! .
\ '' . YbNiBC
E H II C ....•··•••·•···· (51.0 : ~ I- i \. ---f. 22
Q) ::' YbNiBC -0. r----::::: - -.....
'(;100 · · ~~R .....·······H II [110] E
--
...., o "",,,,~._
-E
.,~
..................
AVR PrNi
2B2C
;:-0.5
()
;'"
........ ~
"
...
-~4.
.
.. -... .. __ ..
•••••. ~2.~ 2~
. - ... __ ._-_.-----------
_._~_
.••. }~ •
0.0
100 T (K) 200 300 0 200 -.-2 2 400 600
I (K)
Fig. 29. (a) Magnetic susceptibility x(T) of a PrNizB2C single crystal (SCR) for field H parallel to the e axis
(Hlle) or ab plane (HlllllOJ). Powder averaged (AVR) data and results (depicted by crosses) for polycrystal
(PeR) are also shown. Inset: laX(T)/aTj vs. T for PrNi2BzC single- and polycrystal. (b) X-I(T) vs. T,
obtained from the data in (a). The dotted line is a fit of the AVRdata to the Curie-Weiss law for 200 < T < 300 K.
(c) Specific heat C p vs. temperature T of a PrNiZBZC polycrystalline sample. The results for YbNiz BzC (Yatskar
et al. 1996) and YbNiBC (Hossain et al. 1998) are also shown. (d) Cp/T vs. T Z, obtained from the data in (c).
Dotted lines are the results of fits for 20 < T < 30 K to linear dependence. Insets: (c) C p vs. T and (d) C piT vs.
r 2 plotted on expanded scales (after Narozhnyi et al. 1999c, 200la).
of polycrystalline PrNhB2C samples shows a tendency to saturate below 5 K with

no well-defined peak at these temperatures (Hossain et al. 1995). Neutron-diffraction
measurements (Lynn et al. 1997) have shown that PrNi2B2C orders antiferromagnetically
at TN ~ 4 K (see table 7). Neutron diffraction shows that PrNhB2C is a commensurate
antiferromagnet that consists of ferromagnetic sheets of Pr moments in the a-b plane,
with the sheets coupled antiferromagnetically along the c axis (fig. 26a). As discussed
in subsection 4.1 Pr has a singlet CEF ground state in PrNi2B2C and, therefore, its ordered
magnetic moment is of induced type. Its value of 0.81 Il-B is considerably smaller than the
free-ion value (table 8). No superconducting transition has been seen for PrNhB2C (Lynn
et al. 1997, see table 2).
Clear deviations of the properties of PrNizB2C from those of "normal" magnetic
borocarbides (R = Gd-Tm) were pointed out by Narozhnyi et al. (l999c, 2oooa, 2001a,
2001b), based on measurements of magnetic properties, specific heat, electrical resistivity
and magnetoresistance.
Magnetic properties of PrNi2B2C have been studied for single- and polycrystalline
samples. The magnetic susceptibility X(T) of a PrNjzB2C single crystal (SCR) is plotted
in fig. 29a for two directions of magnetic field (H lie and H II[110]). The powder averaged
data [Xavr = (2Xllo + Xc)/3] for the single crystal and the results for a PrNhB2C
polycrystal (PCR) are also shown. A high degree of magnetic anisotropy XIIO/Xc ~ 11
is observed at T ~ 2 K, but it rapidly decreases with increasing temperature. This is
in agreement with the fact that below TN the direction of the Pr magnetic moments is
within the ab-plane (Lynn et a1. 1997). Below TN, the magnetic susceptibility for H Ilab
grows monotonically with decreasing T and the only indication on an AFM-transition
is the maximum of laXab(T)/aTI curves seen in the inset of fig. 29a. The X-I(T)
dependence for powder averaged (AVR) data is close to linear for high T, but at T <
100 K it deviates significantly from the Curie-Weiss law (CWL) X-I (T) = C/(T - (J),
where C = N /-L zerr /3kB is the Curie constant, /-Leff the effective magnetic moment, (J the
paramagnetic Curie temperature and N the number of J>r3+ ions. A fit of AVR data to the
CWL for 200 < T < 300 K is shown in fig. 29b as a dotted line. For Hllc, HII[IIO],
AVR, and PCR the values of /-Leff for Pr3+ are very close and equal 3.76, 3.77, 3.77, and
3.76 /-LB, respectively. These values are slightly higher than the value J.Lp = 3.58/-LB for the
isolated Pr 3+ (see table 8). The values of (J are found to be (Jc = -110 K, (J\IO = -12 K,
(Javr = -40 K, and (Jpcr = -44 K.
It should be emphasized that for magnetic borocarbides with "normal" magnetic
behaviour (with R = Gd-Tm) the values of (Javr determined at high T are close to
the observed TN (Cho et a1. 1995a, 1995b, 1995c, 1996a, 1996b). Their Xab -I (T) and
Xc-I (T) dependencies can have pronounced deviations from the CWL, which are caused
by crystal field effects. At the same time the powder averaged Xavr - J (T) dependencies
for all these borocarbides are close to linear down to TN effectively concealing the
anisotropy (Cho et a1. 1995a, 1995b, 1995c, 1996a, 1996b). Therefore, both the observed
for PrNizB2C deviations of Xavr -I (T) from the CWL at TN < T < 100 K and the value of
l(Javrl = 40 K, which is one order of magnitude higher than TN ~ 4 K, show the difference
in the magnetic behaviour from those of "normal" RNjzBzC. To some extent similar
deviations were reported by Yatskar et a1. (1996) and Dhar et a1. (1996) for the heavy
fermion system YbNizBzC for which (Javr = -130 K and a nonlinear X-I (T) dependence
was found at T < lOOK. These anomalies can be considered as an indication of the
increased, with respect to "normal" RNizB2C borocarbides, indirect exchange interaction
between Pr ions in PrNjzBzC which may be connected with some hybridization between
the Pr4f levels and the conduction electrons.
Results of specific heat measurements for a PrNjzBzC polycrystalline sample are
presented in fig. 29(c, d) (Narozhnyi et a1. 1999c, 2001a). For comparison the results
for YbNi2B2C (Yatskar et a1. 1996) and YbNiBC (Hossain et a1. 1998) are also shown.
The Cp(T) dependence for PrNjzBzC has a broad maximum at T ~ 4.3 K which is close
to T N ~ 4 K determined by neutron diffraction (Lynn et a1. 1997) and to the position
of the maximum on laXab(T)/aTI curves, see the inset of fig. 29c. The shape of the
maximum of Cp(T) is quite different from the A-type anomaly which is a characteristic
feature of AFM ordering in "normal" borocarbides. The dotted lines in fig. 29d are the
results of fits of the data obtained for 20 < T < 30 K to the dependence C piT = y + {JT2.
These give y ~ 250, 150, and 15 mJ K- z mol-I for PrNjzB2C, YbNjzB2C, and YbNiBC,
respectively. Comparing the results for these three compounds, one can say that YbNi2BZC
reveals a relatively large y even at high T and shows heavy-fermion features at low T
where Cp(T) reaches 530 mJK- 2 mol"! (Yatskaret a1. 1996; Dharet a1. 1996); YbNiBC
has a y comparable with that of the nonmagnetic YNjzB2C and LuNizB2C borocarbides
SZ 1'002~
. Pr
c
g a. y .
cr
C")
0.0 i
.~., La
LU· .
1='0.5 0 T (K) 40
(b)
cr Lu
II
-
:J (c)
0.1>:
'2=
~
a. a.
10 T (K) 20 100 T (K) 200
Fig. 30. (a) Resistivity peT) of a PrNi2B2C polycrystal. Numbers denote the values of H in kOe. Results for
TbNi2B2C (Muller et aI. 1998) are also shown. Inset: P vs. T for 0 < T < 300 K. (b) Normalized resistivity
Pn(T) = p(T)/p(300 K) vs. temperature T for a PrNi2B2C polycrystal in comparison with the results for
YNi2B2C. LuNi2B2C. and LaNi2B2C, Inset: Low temperature part of Pn vs. T. (e) The difference between
Pn of RNi2B2C (R = Pr, Lu, Y) and LaNi2B2C (left axis) and between Pn of PrNi2B2C and YNi2B2C (right
axis).
(Hilscher and Michor 1999) but exhibits AFM ordering at T ::::::: 4 K (Hossain et al. 1998)
which manifests itself as a sharp A-type anomaly. For high temperatures (20 < T < 30 K)
PrNi2B2C has values of the specific heat and y (obtained by the extrapolation to T = 0)
higher than those of YbNi2B2c' but it shows AFM ordering at TN ::::::: 4.3 K which
complicates the interpretation of specific heat data. The large linear term in Cp(T) may
be connected with an increased electronic contribution due to, e.g., hybridization of the
conduction electrons with Pr4f states. However, a possible Schottky contribution connected
with low lying levels of the Pr3+ multiplet splitted by crystalline electric field can also give
a considerable "effective" linear contribution to the specific heat. The question to what
extent the large linear term in C p(T) ofPrNi2B2C is connected with an enhanced electronic
contribution should be clarified by specific heat measurements in a magnetic field (which
should suppress the AFM transition) preferably extended to temperatures below I K.
Results of electrical resistivity measurements for polycrystalline PrNhB2C are shown in
fig. 30a (Narozhnyi et al. 1999c, 2001a). For comparison, the data for TbNhB2C (Muller
et al. 1998) are also shown. For PrNi2B2C a gradual but pronounced drop in resistivity
was found below se 10 K. A magnetic field H = 50 kOe only slightly shifts the p(T)
curve for PrNi2B2C, see fig. 30a. The p(T) dependence for PrNi2B2C at T < 10 K and
the influence of H on p(T) has an anomalous character with respect to other magnetic
borocarbides. (A sharp anomaly in p(T) at TN is typical for "normal" borocarbides as,
e.g., for TbNhB2C (Muller et al. 1998). This anomaly disappears in magnetic fields of the
order of 50 kOe due to the suppression of the AFM transition by the magnetic field.) At the
same time the character of p(T) as well as the influence of H on it for PrNhB2C is rather
similar to the behaviour earlier observed for the anomalous YbNhB2C (Yatskar et al. 1996,
1999; Dhar et at. 1996) for which no indication of magnetic transitions was observed down
to 50 mK. The results described above suggest that the drop in p(T) reported for PrNhB2C
is connected with some peculiarities in scattering of conduction electrons by Pr ions at low
temperatures rather than with AFM ordering because the drop in p(T) develops at T » TN
(Narozhnyi et al. 2oo1a).
The contribution of Pr ions to the scattering of conduction electrons can be estimated by
comparison of the resistivity for different borocarbides. For this purpose the normalized
temperature dependencies of resistivity Pn(T) = p(T)j p(3oo K) are shown in fig. 30b
for R = Pr, Y, Lu, and La (Narozhnyi et al. 2oooa, 2oola, 2oo1b). It was found that, for
200 < T < 300 K, Pn(T) of PrNhB2C is very similar to that of YNi2B2C and LuNhB2C
and is significantly different from Pn(T) for nonsuperconducting LaNi2B2C. Therefore,
to obtain the contribution in Pn(T) from the Pr ions it is more reasonable to use, as
a nonmagnetic reference YNhB2C or LuNi2B2C rather than LaNhB2C. The difference
[Pn(Pr) - Pn(Y)] is shown as solid curve in fig. 30c. Magnetic scattering increases with
decreasing T and has a pronounced maximum at T ~ 25 K. Such a behaviour is typical for
some heavy-fermion systems (see, e.g., Lee and Shelton 1987).
It is also of interest to compare the temperature dependencies of resistivity of
RNhB2C (R = Y, Lu, Pr) with that of nonsuperconducting nonmagnetic LaNjzB2C.
The differences [Pn(R) - Pn(La)] are shown in fig. 30c. It is clearly seen that the
superconductors YNi2B2C and LuNi2B2C have very similar additional contributions
to resistivity in comparison with nonsuperconducting LaNhB2C. For PrNi2B2C the
representation [Pn(Pr) - Pn(La)] = [Pn(Pr) - Pn(Y)] + [Pn(Y) - Pn(La)] shows that the
additional contribution to Pn(T) of PrNi2B2C in comparison with LaNjzB2C ("Pr-La"
curve in fig. 30c) can be considered as composed of the two terms discussed above. The first
term ("Pr-Y" curve) has a maximum at low temperatures connected with the scattering by
Pr ions. The second term ("Y-La" curve) has a broad maximum at T ~ 150 K. Therefore the
absence of superconductivity in PrNi2B2C may be supported by the increased scattering of
conduction electrons by Pr ions at low temperatures (Narozhnyi et al. 2oo1a, 2oo1b). The
substantial deviations of the B-Ni-B tetrahedral angle from the ideal value (Siegrist et al.
I994b) and the decreased value of the calculated electronic density of states for light rare
earth based borocarbides (Mattheiss et al. 1994; Divis et al. 2000; see table 7) is usually
considered as the main reason for the absence of superconductivity in PrNhB2C (see also
subsections 2.1 and 3. I). It should be noted however that no hybridization effects between
4f and conduction electrons were taken into account in these band structure calculations.
Analyzing the influence of the Ni-Ni distance in borocarbides on T c (Lai et al. 1995,
fig. 9), one could expect T c ~ 6 K from the PrNhB2C lattice parameters, if the Pr3+ ion
would be nonmagnetic. The additional suppression of T c due to magnetic pair breaking
by Pr ions can be estimated in the framework of the Abrikosov-Gor'kov theory using
the de Gennes scaling roughly valid for borocarbides with T c > TN (Eisaki et al. 1994,
see subsection 1.4). This suppression is about 2 K. Therefore, in case of a "normal"
behaviour ofPrNhB2C, it would expected to be superconducting with T c ~ 4 K. (A similar
analysis for RNhB2C with R = Nd, Sm, Gd shows that magnetic scattering will fully
suppress possible superconductivity in accord with the experiments, see subsections 4.4-
4.6.) The measurement of p(T) has shown (Narozhnyi et al. 1999c, 2oola) that there is no
252 K.-H. MULLER et a1.
... ~ t ~
17
+- -+ ~ t
Nd Sm
Fig. 31. Observed magnetic structures of NdNi2 B2C and SmNi2B2C (after Skanthakumar and Lynn 1999).
indication of superconductivity in PrNi2B2C at T down to 0.35 K. Measurements of T c for

diluted Y t-xPrxNizB2C samples have shown that the superconductivity suppression rate
laTe/axl for this system is about 35 K. which is about 20 times largerthan expected from
de Gennes scaling for Y l-xGdxNizB2C (Narozhnyi et al. 1999c, 2001a. 2001b). Partially.
this rapid suppression of T c is connected with the difference in the ionic radii of y3+ and
Pr3+ ions. Nevertheless. after the influence of the difference of ionic radii of Pr3+ and
y3+ was taken into account. the pure magnetic contribution to IaT cI ax I ~ 18 K is still
about 9 times larger than expected from a comparison with de Gennes scaling (Narozhnyi
et al. 2001a. 2001b). This correlates with the value of TN. which for PrNi2B2C is about
4 times higher than expected from the de Gennes scaling. Both TN and IaTe/ax I should
be proportional to [2DG (see. e.g., Canfield et al. 1998 and subsection 1.4), where [ is a
measure of the exchange interaction between 4f levels and conduction electrons. and DG is
the de Gennes factor. The observed simultaneous deviations of TN and IaTe/ax I from the
expected values may be considered as an indication of the anomalously high value of I,
This seems to be an independent manifestation of 4f-conduction electron hybridization in
PrNizB2C.
Noteworthy is the analogy between the anomalous behaviour of Pr in borocarbides with
the well known anomalous properties of Pr-containing cuprates (Lynn 1997. see subsec-
tion 1.3). For PrBa2CU307-y. e.g .• it is widely accepted that the absence of superconduc-
tivity and anomalously high TN are connected with the increased hybridization effects of
4f-levels with planar oxygen derived states being important for superconductivity of doped
holes. Although the reason for the anomalous behaviour of PrNbB2C is not completely un-
derstood so far. it is possible to say that the anomalously increased Neel temperatures and
the rapid suppression of superconductivity for Y l-xPrxNizB2C and Y l-xPrxBa2CU307-y
type systems are characteristic features for both Pr-based borocarbides and cuprates.
This borocarbide is a non-superconducting antiferromagnet with the magnetic structure

shown in fig. 31. According to the empirical curves of fig. 9 the absence of superconduc-
tivity in NdNizB2C is expected to be mainly caused by two reasons. Firstly. the change
of the lattice spacings is expected to cause the changed electronic structure compared to
the cases R = Sc, Lu and Y. in particular the reduced density of states at the Fermi level
N(Ep) labeled in table 7 (Siegrist et al. 1994b; Mattheiss et al. 1994). However these ef-
fects of the lattice structure are not sufficient to explain the absence of superconductivity
for R = Nd as ThNi2B2C is a superconductor in spite of its relatively large lattice con-
stant a (see fig. 9). The second mechanism suppressing superconductivity in NdNizB2C is
the rare-earth magnetism. As discussed in subsection 4.1. Nd3+ is a Kramers ion whose
individual magnetic moment cannot be quenched by crystalline electric fields. Magnetic
ordering in NdNi2B2C at TN = 4.8 K had been reported by Nagarajan et al. (1995) and
Gupta et al. (1995) who measured the magnetic susceptibility on polycrystalline samples
and found a paramagnetic moment of 3.61lB per Nd ion which agrees with the free-ion
value IIp in table 8. The magnetic structure of NdNi2B2C (fig. 31). including the staggered
Nd magnetic moment (2.1 IlB. see table 8) has been determined by Lynn et al. (1997) using
elastic neutron diffraction. This structure has been confirmed by X-ray resonant exchange
scattering (XRES; Detlefs et al. 1997b).
4.5. SmNi2B2C
The fact that SmNi2B2C is not a superconductor can be understood by similar reasons
as in the case of NdNizB2C. Although the calculated density of states N(Ep) of
SmNi2B2C is larger than that of NdNizB2C. it is considerably smaller than that of the
superconducting RNizB2C compounds (see table 7). Furthermore Sm 3+ is a Kramers ion
(see subsection 4.1) and therefore. Sm magnetic moments will be present which also are
unfavorable for superconductivity. Magnetic ordering in SmNizB2C at about 9.8 K had
been observed by Hossain et al. (1995) and Prassides et al. (1995) who measured magnetic
susceptibility and muon spin relaxation. respectively. The paramagnetic moment has been
determined by EI-Hagary et al. (2000a) who analyzed the temperature dependence of
magnetic susceptibility and found a modified Curie-Weiss law. X = xo + C /(T - 0). with
a paramagnetic Curie temperature (J = -23 K and. resulting from the Curie constant C.
a paramagnetic Sm moment of IIp = O.6IlB which is relatively close to the Sm 3+ free-
ion value O.851lB (see table 8). The constant term Xo = 3.7 X 10-6 cm 3/g has been
attributed to van Vleck paramagnetism due to J multiplet spacing and coupling of the
J = 5/2 ground state to the J = 7/2 state. These authors also found an anomaly of the
specific heat of SmNi2B2C at about I K below TN which they assumed to be associated
with some spin reorientation transition. Since Sm is highly neutron absorbing no neutron
diffraction studies on SmNizB2C have been performed. Fortunately the magnetic structure
of this compound could be determined by the XRES technique mentioned in subsection 4.4
(Detlefs et al. 1997b). It should be noted that the two magnetic structures of NdNizB2C
and SmNi2B2C in fig. 31 have the same modulation wave vector (1/2, O. 1/2). but the
magnetic moments in the two compounds have different directions. In both cases. the
magnetic unit cell is double the chemical unit cell along the a and c directions while it
is the same along b. Typical XRES integrated-intensity curves from which the structures
of fig. 31 could be derived are shown in fig. 32. Since the magnetic structure of NdNi2B2C
has independently determined by neutron diffraction. the XRES results for this material can
be considered as a proof of the ability of x-ray resonant exchange scattering to determine
moment directions with no a priori information. Unfortunately the staggered magnetic
moment (Il) in SmNi2B2C cannot be determined by XRES.
40
~30
'§
~ 20
=- 10
~300
'a::I
~ 200
=- 100
O......*~::!: - '-: ==-.L.- - zf'- -'-: !'"''"~=-'""""*:- '
~ s:. s;.
0
50 s:. ~0
0
..... .....
...!... ...!... ...!...
0
_oN 0
~
0
~ ~
Fig. 32. The integrated intensity of magnetic reflections of x-ray resonant exchange scattering measured for
NdNi2B2C and SmNi2B2C, Dashed line and full line: model calculations for a magnetic moment parallel to the
tetragonal a-axis and c-axis, respectively (after Detlefs et al. 1997b).
The absence of superconductivity in GdNizB2C is understandable for various reasons.

According to the tendency of the transition temperature T c of RNizB2C compounds
with heavy R-elements to approximately follow a de Gennes scaling (see fig. 8) T c
of GdNi2B2C should be zero. Furthermore, Gd 3 + has no orbital momentum Land,
consequently, it has a spherical charge density resulting in a vanishing Stevens coefficient
OIJ (see table 8). Therefore the magnitude as well as the direction of the Gd magnetic
moment in GdNizB2C are nearly insensitive to crystalline electric fields (CEF) and Gd
can be considered as the most effective magnetic pair breaker among the R elements (Cho
et al. 1996c). Additionally, the lattice parameters of GdNi2B2C are different from those
of superconducting RNi2B2C compounds and according to the T c-vs.-a curve in fig. 9
a hypothetically non-magnetic GdNi2B2C compound would have a reduced value of T c-
which also manifests itself in a reduced density of states at the Fermi level N(EF) (see
table 7). Measurements of the magnetic susceptibility, at temperatures up to 300 K, on
GdNi2B2C single crystals confirmed the magnetic isotropy of this compound and yielded
an effective paramagnetic moment JLp = 8.1 JLB which is close to the Gd3+ free-ion value
of 7.9JLB (see table 8) and agrees with the value measured by Gupta et al. (1995) on a
powder sample whereas measurements of magnetization at low temperatures indicate a
magnetic ordering temperature TN ~ 20 K and a spin reorientation transition temperature
TR ~ 14 K (Canfield et al. 1995; see also fig. 33).
Due to the weak influence of the CEF in this compound its magnetic structure is expected
to be governed by the RKKY exchange interaction as well as the electronic structure
COCo
0.32 o 0
e 0
Q)
o 00
o
00 0
0
0
CDC []
~ 0.30 ° 0
"3 o °
° 0
E
Q)
o o
~ 0.28 00°0
° GdNhBzC
00
I 0 00 0
00
~
0.26.L...,------r--~-,-~-.,_--_r_'
5 10 15 20 25
Temperature (K)
Fig. 33. Temperature dependence of the susceptibility of GdNi2 B2C measured at I Tes1aon an oriented powder.
indicating the two magnetic phase transitions near 20 K and 14 K (after Felner 2(01).
(i)300
o
~
'-!.200
..£.
:E
I
100
o 4 8 12 16 20
Temperature (K)
Fig. 34. Temperature dependence of the hyperfine field components along the tetragonal band c axes. (Hhf)1>
and (Hhf>C, of a GdNi2B2C sample. reflecting the temperature dependence of the corresponding components of
the Gd magnetic moment. The lines leading to the ordering temperature TN = 20 K and the spin reorientation
temperature TR = 14 K are guides for the eye (after Tomala et aI. 1998).
including the shape of the Fermi surface. Since natural Gd strongly absorbs neutrons
and non-absorbing Gd isotopes are expensive neutron diffraction has not been used to
determine the magnetic structure in GdNjzB2C. Combining resonant and non-resonant x-
ray magnetic scattering Detlefs et al. (1996) confirmed the value of TN = 19.4 K and
showed that below TN this compound forms incommensurate antiferromagnetic states
with a wave vector q ~ (0.55,0,0) which is close to the nesting vector discussed in
subsection 3.1. Between TN and 13.6 K the magnetic structure is equivalent to that of
ErNi2B2C in its ground state i.e. the ordered magnetic moment is along the b axis (see
fig. 26). Below TR = 13.6 K an additional ordered component of the magnetic moment
develops along the c-axis. The two magnetic phase transitions have been observed also
by 155Gd Mossbauer spectroscopy which reveals a bunched spiral-like low-temperature
structure with the Gd magnetic moments rotating within the (b,c)-plane (Mulder et al.
1995; Tomala et al. 1998; see fig. 34). The value of the staggered Gd moment (JL) in
GdNi2B2C has not yet been experimentally determined. However, since Gd 3+ is a spin-
only ion with the spin S as large as 7/2 no remarkable deviations from the ideal value
(J1.) = J1.s = 7J1.B (see table 8) are expected to be caused by crystalline electric fields or
quantum fluctuations or effects of hybridization.
4.7. TbNi2B2C
According to figs 8 and 9 TbNi2B2C does not superconduct (Tomy et aI. 1996c) and,
as in the case of GdNhB2c' the absence of superconductivity is suggested to be mainly
caused by (ordered) 4f-magnetic moments. The magnetic structure is an incommensurate
spin density wave along the a-axis with the magnetic moments parallel to the modulation
vector of this SDW and to the a-axis (see fig. 26 and tables 7 and 8). The relation of this
magnetic structure to the orthorhombic lattice distortion discussed in subsection 2.2 has
been determined by resonant magnetic x-ray scattering (Song et aI. 200 Ia). The modulation
vector q = (0.55,0,0) practically coincides with the nesting vector found in most of the
quaternary borocarbide superconductors (see subsection 3.1). This fact together with the
high density of states at the Fermi level (N(EF), see table 7) suggests that without the
4f-local-moment magnetism TbNi2B2C would be a superconductor. Below 8 K Cho et aI.
(l996a) found a small ferromagnetic component within the (a.b )-plane of a TbNi2B2C
single crystal and, in this temperature range, magnetization-vs.-field curves show (a small)
ferromagnetic hysteresis. These phenomena have been attributed to weak ferromagnetism
of Dzyaloshinsky-Moriya-type (Dzyaloshinsky 1957; Moriya 1960) where, similar as in
NiF2, the combination of crystalline electric fields and spin-orbit coupling is the particular
underlying microscopic mechanism. The onset of weak ferromagnetism has also been
confirmed by x-ray magnetic circular dichroism measurements (Song et aI. 200lb). A
magnetic phase diagram with a domain of a weak ferromagnetism, as proposed by Cho
et aI. (l996a), is shown in fig. 35. At temperatures where the weak ferromagnetism occurs
the intensity of elastic neutron diffraction shows a weak anomaly (Dervenagas et aI. 1996;
Lynn et aI. 1997). The presence of weak ferromagnetism has also been supported by
Mossbauer spectroscopy and muon spin relaxation (J1.SR; Sanchez et aI. 1998). The M-
H isotherms at low temperatures show that for H perpendicular to the c-axis TbNi2B2C
undergoes a series of metamagnetic states before finally saturating into a ferromagnetic
state (Tomy et al. 1996a; Canfield and Bud'ko 1997; see fig. 36). On the other hand,
for H parallel to c, the M-H isotherms are linear as in simple antiferromagnets. This
indicates that the direction of the ordered Tb magnetic moments is strongly confined
to the (a. b)-plane in agreement with the negative sign of the Stevens coefficient <XJ of
Tb 3+ (see table 8). The metamagnetic transitions are accompanied by large values of
magnetoresistance which remains considerably large even above the ordering temperature
T N ~ 15 K (Tomy et aI. 1996a; MUlier et al. 1998). This points to strong spin-disorder
scattering and, may be. to reorientation of magnetic short-range order. So far no theoretical
model has been published describing the magnetic structure in the ground state or the
metamagnetic states of TbNi2B2C. Such model would have to take into account Fermi
surface nesting of the conduction electrons which mediate the exchange coupling of the
Tbmoments.
TbNbB2C
H1(1101
3Of-
paramagnetic
6'
~
D D D
i~ D D
DiD.
0 201- Intermediate D
= orderedstate
~ D
II
~
D D D D
•
D
D
~
10
..-oj •
WF
I AF D
•
i •AI
0 I 'i'l
2 5 10 15
Temperature (I<)
Fig. 35. Magnetic-fie1d-vs.-temperature magnetic phase diagram for TbNi2B2C proposed by Cho et aI. (l996a).
AF: antiferromagnetic; WF: weakly ferromagnetic. The nature of the 'intermediate ordered state' is not yet
known.
10 a = O·
TbNhBzC 15
25·
E 8
0 T=2K
n; 40·
.D 6
f0-
Il.
:1. 4
~
I
2
.·FJ
0
0 10 20 30 40 50 60
H (kG)
Fig. 36. Metamagnetic transitions measured on a TbNi2B2C single crystal, at 2 K. Field H and measured
component of magnetization M are within the tetragonal basal plane. 9-angle with respect to the a-axis (after
Canfield and Bud'ko 1997).
4.8. DyNi2B2C
In agreement with the overall behaviour of the RNhB2C compounds with heavy 4f
elements R, shown in fig. 8, this compound is the unique member of the RNhB2C
series in which the onset of superconductivity takes place in an antiferromagnetically
ordered state i.e. TN = II K > T c = 6.3 K (also see table 7). It should be noted that
in the ruthenocuprates discussed in subsection 1.3 also antiferromagnetic order (and even
6
(a)
5
5r-----.,.---.....".------.."
E FM
H II a (b)
4 4 (9 = 45°\
"0 ttttTTtt
~ 3 o
MM3 : MM1 AFM AFM
o 3
.~
E
Q)
c:: 2
o
... ::::~,:
...
Ol ~2
lU t .....T....1....t ..... a: ..• ~.
::2! ;!.:!~t ....
AFM
'.'. " '.
~ \
-40 -30 -20 -10 0 10 20 30 40 1 10

Angle e (Degree) Temperature (K)
Fig. 37. (a) Magnetic-field H angle () phase-diagram where H is applied within the (a, b)-plane and ()
is the angle of H with the [1101 direction of a DyNi2B2C single crystal. MMI. MM2. MM3 and FM
are metamagnetic phases. AFM the antiferromagnetic low-field phase. Arrows are explained in the text,
(b) Resistivity-vs.-temperature curves for increasing temperature after H had been reduced from a large value
to the final value. The indicated magnetic states belong to lJ.oH = 0.45 T (after Winzer et al. 1999).
weak ferromagnetism) coexists with superconductivity and TN is considerably larger

than T c. The ground-state magnetic structure of OyNhB2C shown in fig. 26a consists
of ferromagnetic sheets, with the Dy magnetic moments parallel to the [110] direction,
which are antiparallel in adjacent Dy planes. For a field H applied parallel to the a-axis,
at temperatures below 2 K, resistivity p versus H curves show a strong hysteresis i.e.
upon decreasing H the onset of superconductivity occurs at a much lower value of H than
the upper critical field obtained for increasing H (Peng et al. 1998). No hysteresis effects
have been observed for Hllc and the hysteresis in superconductivity is almost zero for
HII[ 110]. Winzer et al. (1999) have related this hysteresis of the p-vs.-H transition curves
to hysteresis in the metamagnetic transitions reported earlier (Lin et al. 1995; Tomy et al.
1996b; Canfield and Bud'ko 1997; Naugle et al. 1998).
A strength-of-field angle-of-field phase diagram of the metamagnetic states, derived
from resistivity and magnetization data for T < 2 K is shown in fig. 37a. In this diagram
the arrows symbolize the direction of magnetization which is assumed to be identical with
those [110] directions which are either near parallel (t) or near antiparallel (-!,) or near
perpendicular (~) to H. The hysteresis of the metamagnetic transitions has also been
considered to be the reason why, upon warming, field cooled OyNhB2C single crystals
exhibit the near-reentrant superconductivity presented in fig. 37b. It should be noted that
without the specific magnetic prehistory of the sample in fig. 37b i.e. for cooling the sample
in the measuring field near-reentrant behaviour does not occur (Peng et al. 1998), In the
non-superconducting antiferromagnetic state the resistivity measured on single crystals in
the (a,h)-plane (Cho et al. 1995a) as well as on polycrystalline samples (Lin et al. 1995)
strongly decreases with decreasing temperature, resulting in a normal-state resistance ratio
p(TN)/ peT c) of typically 2.5. This is attributed to reduced spin-disorder scattering due to
magnetic ordering but is not yet really understood. The metamagnetic transitions result in
a positive low-temperature magnetoresistance as large as 30% (Peng et al. 1998) similar as
60
50
8
-
:::J
6
~
(5
40
~ ..§ 30
-'w
>.
'S
''-
4 0.2T
2-
(J
a. 20
'w 2 10 (b)
Q)
a:: (a) 0
0
0 T (K) 2 4 6 8 10
T (K)
Fig.3S. (a) Resistivity vs. temperature measured at different magnetic fields H on a polycrystalline HoNi2B2C
sample. T c is the superconducting transition temperature at H = O. A near-reentrant behaviour occurs around
a temperature TN. (b) Temperature dependence of the specific heat C p of a HoNi2B2C single crystal
(2 mm x 3 mm x 0.1 mm in size), measured at zero magnetic field. Above the main peak of Cp{T) at TN.
two additional features appear (marked by arrows). Samples prepared by J. Freudenberger.
in the case of TbNi2B2C (see Tomy et al. 1996a). It would be interesting to know whether
at least one of the metamagnetic states of fig. 37 has a modulation vector q close to the
nesting vector r = (0.55.0,0) as observed for HoNjzB2C (see subsection 4.9.2).
4.9. HoNi2B2C
HoNi2B2C is one of the most interesting compounds among the borocarbide supercon-
ductors. As can be seen in fig. 38a, resistivity-versus-temperature curves measured at zero
magnetic field H show a sharp transition into the superconducting state at T c ~ 8 K. For
relatively small fields (e.g. 0.13 Tesla in fig. 38a) near-reentrant superconductivity similar
as in GdM06Ss (see fig. 6) is observed which was first reported by Eisaki et al. (1994).
Figure 38a also shows that the temperature range near TN where the reentrant behav-
iour occurs does not much depend on the value of H. Therefore TN is considered to be
some intrinsic temperature indicating a magnetic phase transition. This is supported also
by measurements of the specific heat C p (see fig. 38b) which shows a peak near the tem-
perature TN. No separate anomaly of C p is found at T c. This is due to the fact that the
high-temperature tail of the specific-heat anomaly is still much higher than the expected
jump in C p associated with the superconducting transition (Canfield et al. 1994). How-
ever, a jump in C p due to the onset of superconductivity has nevertheless been determined
from the difference of C p data measured at zero field and at 200 mT where, in the vicinity
of T c- the superconductivity is suppressed: ~Cp ~ 140 mJ/molK (EI-Hagary et al, 1998).
Other distinct features of the temperature dependence of C p are the two shoulders above
the main peak (marked by arrows in fig. 38b). These features indicate two further phenom-
ena of magnetic ordering, which will be discussed in subsection 4.9.1. Special behaviour at
temperatures near and above TN was also observed for various other physical properties.
Thus the thermal conductivity shows a discontinuous increase at TN (Sera et al. 1996). The
(a) (b) (c)
Fig. 39. The different magnetic structures of HoNi2B2C as determined by neutron scattering. (a) Commensurate
antiferromagnetic. (b) incommensurate c· -structure (spiral) with the modulation vector '["2 = (0. O.0.916) and
(c) proposal how the incommensurate a··structure looks like (Loewenhaupt et aI. 1997). Its modulation vector is
(0.585. O.0).
temperature dependence of the microwave impedance has a maximum at TN. which dis-
agrees with BCS calculations (Jacobs et al. 1995). Point-contact studies of Rybaltchenko
et al. (1999) revealed that the superconducting order parameter satisfied the BCS theory
only below 5.5 ... 5.8 K whereas at higher temperatures an anomalous superconducting
state is observed. Investigating HoNjzB2C one has to consider that between TN and T c
the magnetic and superconducting properties are very sensitive to details of the prepara-
tion procedure and to small deviations from the ideal stoichiometry (Wagner et al. 1999;
Dertinger et al. 2001; AlIeno et al. 2001; see also subsection 4.9.3).
4.9.1. Types of magnetic order in HoNi2B2C

It has been shown by elastic neutron diffraction that at zero magnetic field in HoNi2B2C
three different types of antiferromagnetic order occur which. in a certain temperature
range, even may coexist (Grigereit et al. 1994; Goldman et al. 1994). Upon cooling the
commensurate structure of figs 26a and 39a largely forms at TN ~ 5.2 K. This structure
with its ferromagnetic sheets in the tetragonal basal plane is in accordance with results
of Cho et al. (1996b) who analyzed the susceptibility of single crystals and found Ho-Ho
nearest-neighbor exchange constants that are positive within the basal plane but negative
and considerably weaker along the c-axis. As will be discussed in subsection 4.9.4
significant neutron scattering intensity of this structure is also observed above TN.
Additionally. in the temperature range TN < T < T c there is an incommensurate spiral
structure along the tetragonal c-axis with a modulation vector '['2 ~ (0. 0.0.916) where. as
in the ground state. the magnetic moments are ferromagnetically aligned in the (a. b)-
plane. The ferromagnetic sheets in adjacent layers have a relative orientation of about
163.40 instead of 1800 for the ground state (see fig. 39(b and a». Utilizing high-resolution
x-ray scattering Hill et al. (1996) showed that this c-axis spiral is characterized by
two wave vectors. ql = (0,0,0.906) and q2 = (0,0,0.919). The c-axis spiral has been
12
10 tt~ (a)
8"8 8"
~6 ~10
::I: 4
para ::I: tJ.ttJ. ttJ.tt
2
o o tJ.tJ.tJ. tJ.tJ.tJ.
2 4 6 8 10 -40 -20 02040
T[K] e [deg]
Fig. 40. Magnetic phase diagrams of HoNi282C. (a) Field H applied along the tetragonal a-axis. t ~ is the
antiferromagnetic phase corresponding to figs 26a and 39a. Here para means the paramagnetic phase steadily
changing. with increasing H. into the saturated (ferromagnetic) state t t. The metamagnetic phases t H and
tt-+ are described in the text (Rathnayaka et al. 1996; Detlefs et al. 2000). (b) H-8-pbase-diagram at T = 2 K.
where H is perpendicular to the c-axis and has an angle 8 with respect to the nearest magnetically easy [IIO}
direction; meaning of the arrows as in (a) (Canfield et al. I997a).
successfully described in a quasi-linear mean field model taking into account crystalline
electric fields and the RKKY interaction and supposing the presence of ferromagnetic
sheets (Amici and Thalmeier 1998). Furthermore, in a small temperature range above TN
an a -axis modulated incommensurate magnetization structure occurs with a modulation
vector t) ~ (0.58,0,0) which is close to the nesting vector known from other borocarbide
superconductors in particular LuNhB2C and YNi2B2C (see subsection 3.1). The exact
form of this a" structure is still unknown. From results of neutron diffraction experiments
on powder samples Loewenhaupt et a1. (1997) concluded that the a" -structure has an
oscillating component of magnetic moments perpendicular to the (a,h)-plane as shown
in fig. 39c. On the other hand a study by Detlefs et a1. (2000) of metamagnetic phases
suggests that the a" -structure has only magnetic moments perpendicular to the c-axis (see
subsection 4.9.2). Experimental as well as theoretical work must be done to clarify the
form of the a" -structure and its underlying mechanism which is obviously connected with
Fermi surface nesting.
4.9.2. Metamagnetic transitions and magnetoresistance

For magnetic fields H applied perpendicular to the tetragonal c-axis ofHoNi2B2C single
crystals, measurement of magnetization as well as elastic neutron diffraction show up to
three metamagnetic transitions similar to those visible in fig. 36 for ThNi2B2C (Cho et a1.
1996b; Rathnayaka et at. 1996; Canfield et a1. 1997a; Campbell et a1. 2000a; Detlefs et a1.
2000). It was concluded that in a strength-of-field angle-of-field phase diagram, besides
the paramagnetic phase at elevated temperatures and the simple antiferromagnetic phase
(t ..J,) at low temperatures and low fields, three additional low-temperature phases occur for
sufficiently high fields. These metamagnetic phases are denoted by the arrow combinations
t t..J, and t t - in fig. 40. Here it is assumed that in all of the magnetically ordered phases
the local magnetic moments are directed along [110] axes that are either near parallel
(arrow t) or near antiparallel (..J,) or near perpendicular (- ) to the applied field. As a very
important result Detlefs et at. (2000,2001) found by elastic neutron diffraction at 2 K that
262 K.-H.MULLER er al.
the second metamagnetic phase (tt-+) has a modulation vector r3:::::: (4/7,0,0). In this
experiment the angle 0 of H with respect to the [110] direction was 15°. A similar result
has been reported by Campbell et al. (2000a) who measured at 0 = 45° i.e. for H parallel
to [100] and found that the second metamagnetic transition results in a magnetic phase that
is characterized by an incommensurate wave vector of about (0.61,0,0). The presence of
an a*-metamagnetic phase at 2 K is also supported by results of Kreyssig et al. (l999b)
who performed elastic neutron-diffraction experiments on HoNhB2C powders and also
detected three different metamagnetic phases. The extension of the low-temperature
metamagnetic phases to incommensurate zero-field phases at elevated temperatures, as
shown in fig. 40, has also been supported by specific heat measurements of Jae-Hyuk
Choi et al. (2001a). Further experimental work should be done in order to determine the
complete region in the H -T -O-space where the phase (t t -+ ) of fig. 40 exists. Also it has
to be clarified whether this phase in its whole range of existence is really characterized by
an incommensurate propagation vector r3 = (~, 0, 0) and how much ~ varies across the
phase diagram. It is interesting to note that in HOI-xRxNi2B2C compounds with R = Y
or Lu and x ~ 0.25 the value of ~ weakly increases with increasing x.
The wave vector r3 is ubiquitous in the quaternary borocarbides (Canfield and Bud'ko
2(01) as (i) the borocarbide superconductors show Fermi-surface nesting characterized by
a nesting vector equal to r3 (see subsection 3.1), (ii) in some of the RNhB2C compounds,
in particular for R = Y and Lu, phonon softening is observed for a wave vector r3
(see section 3.1), (iii) zero-field incommensurate magnetization structures with r3 as the
modulation vector occur in RNi2B2C for R = Gd, Tb, Ho and Er (see subsections 4.6,
4.7,4.9.1 and 4.10) and (iv) a metamagnetic phase with a modulation vector close to r3
has been reported also for TmNhB2C (see subsection 4.11). A further unsolved problem is
whether or not the metamagnetic phase (t t -+ ) in fig. 40 has components of magnetization
perpendicular to the (a, h)-plane, at least in a limited region of the phase diagram,
as proposed by Loewenhaupt et al. (1997) for H = O. Two microscopic approaches
have been presented in literature which, until recently, had been believed to reasonably
describe the magnetic phase diagram of fig. 40b. Amici and Thalmeier (1998) used the
quasi one-dimensional model mentioned in subsection 4.9.1 in which the presence of
ferromagnetically ordered Ho layers with their magnetic moments oriented perpendicular
to the tetragonal c-axis is supposed from the very beginning and the competition of RKKY
interaction along the c-axis with the crystalline electric field is analyzed. The so-called
clock model of Kalatsky and Pokrovsky (1998) is also a semiclassical approximation
which starts with the assumption that the strong single-ion anisotropy confines the Ho
magnetic moments to the four directions [110]. Both models predict the phase boundaries
of fig. 40b as well as the temperature dependence of the c-axis commensurate-to-
incommensurate transition surprisingly well. However both models cannot explain the
origin of the a" -phase observed at zero field (see subsection 4.9.1) or at finite field as
reported by Detlefs et al. (2000). Possibly these problems can only be solved by a more
detailed description of the RKKY interaction, taking into account the Fermi-surface-
nesting features.
Figure 41 shows that in the normal state HoNi2B2C has a considerably large
magnetoresistance MR of negative sign. (The positive sign of MR* in fig. 41a is due
to the alternative normalization of this quantity which has been introduced so that data
50 o
·5
~
~'10
• -25
a: a:: .15
~
~·50 4.8K
·20
-75
-25
·100 (a)
o 234 5 o 2 3 4 5
~H (T) IloH (T)
Fig.41. Magnetoresistivity characterized by MR* = [(R(H) - R(5T)])/R(5T)and MR = [(R(H) - R(O))/ R(O)

of polycrystalline HoNi2B2C as a function of the magnetic field H. measured at different temperatures.
from normal and superconducting states can be included in the same figure.) The normal
state MR of HoNi2B2C is isotropic concerning the direction of the applied field with
respect to the measuring current and it has been pointed out by Fisher et al. (1997)
that the temperature and field dependence of MR can be attributed to spin-disorder
scattering. However the large values of MR observed above the magnetic ordering
temperature (fig. 41b) are not yet explained. May be they are related to magnetic
short-range order or low-dimensionality magnetic ordering (MUller et al. 2001a). Such
ordering effects at small length scales or in low dimensionality may also be the reason
for the high-temperature tails observed for the specific heat (fig. 38b) and the neutron
scattering intensity (subsection 4.9.4). The large normal-state values of MR· (fig. 41a)
may be connected with the reorientation of ordered magnetic moments i.e. metamagnetic
transitions as discussed above.
4.9.3. Reentrant and near-reentrant behaviour

Now it is generally accepted that single-phase stoichiometric HoNi2B2C has the near-
reentrant behaviour presented in fig. 38a although some of the numerous investigated
HoNbB2C samples show real reentrant behaviour at zero field. It can be summarized
that depending on details of the preparation route HoNi2B2C samples are found to
be magnetically ordered superconductors with near-reentrant behaviour or reentrant
superconductors or even non-superconducting magnetically ordered materials (Schmidt
et al. 1995). It has been pointed out by AlIeno et al. (2001) that this variation
in the superconducting properties may be due to the fact that HoNbB2C forms in
equilibrium with ferromagnetic phases in the Ho-Ni-B-C system as e.g. HoB2C2 (~7 K),
H02NbB6 (~ 12 K), HoNi4B (~6 K) etc which have Curie temperatures (quoted in
brackets) in the temperature range of interest (4-8 K) and may coexist with HoNhB2C
microscopically.
It is well known that ferromagnetism favors reentrant behaviour (see subsection 1.3).
The formation of such secondary phases is supported by nonstoichiometry. Therefore
the chemical characterization of the sample is of prime importance. However, due to the
presence of the two light elements Band C the various classical characterization techniques
as chemical analysis, intensity analysis of x-ray or neutron diffraction, transition electron
0.0 HoNbB 2CI.I iT -

1.0
Ho(Ni).xCo xhB2C rrr:
0.8
1f
f\ I!
j1 x =0
...,. -0.2
~
~
->< -0.4 lOdays
~
e
~
0.6
0.4
0.005
0003
1/
-0.6 2o~:7;~)) (a) 0.2
j\ )f
tlrfJ.
1 (b)
2 4 6 8 10 6 1 8 9
T(K) T(K)
Fig. 42. Reentrant behaviour in modified HoNi2B2C samples. (a) Annealing of polycrystalline HoNi2B2CI.I at
I 100°C for 10 days or 20 days results in reentrant behaviour whereas less intensely annealed material (. and .)
shows no reentrant behaviour (Schmidt et al. 1997). (b) Reentrant behaviour caused by substitution of Ni by Co
(Schmidt 1997). X I - ac susceptibility. p - electrical resistivity.
microscopy. high resolution electron microscopy etc are almost inefficient in determining
compositions. Recently the carbon content of the phases in HoNi2B2C samples could be
successfully determined using nuclear- and electron-probe microanalysis (Alieno et al.
200 I). Furthermore. it has been underlined by Wagner et al. (1999) and Schmidt and
Braun (1998) that HoNi282C has a finite homogeneity range which may result in a
corresponding range of magnetic and superconducting properties. These authors could
continuously (reversibly as well as irreversibly) change the superconducting properties
of HoNi2B2C samples, in particular the transition temperature T c and the reentrant
behaviour. by appropriate heat treatment procedures. An example is shown in fig. 42a.
As expected the reentrant behaviour is also sensitive to small concentrations of impurity
elements in the samples. As an example, fig. 42b shows that the substitution of 0.5
percent of Ni by Co is sufficient to cause reentrant behaviour. Uwatoko et al. (1996)
have shown that reentrant superconductivity in single-crystalline HoNi2B2C can also
be induced by hydrostatic pressure of II kbar. For increasing pressure they found an
increase of TN and a decrease of T c. These authors attribute their results to an enhanced
coupling of the conduction electrons with the Ho magnetic moments, due to the increased
pressure. A more detailed investigation of the influence of hydrostatic pressure P on the
superconducting and magnetic properties of HoNi282C was done by Dertinger (2001).
He found dT c/dP = -0.32 K/GPa and. depending on whether or not the samples are
superconducting (due to the chemical or microstructural variations discussed above).
dTN/dP = 0.2 K/GPa or 1.4 K/GPa. respectively, with TN as the temperature where
the commensurate antiferromagnetic structure of figs 26a and 39a appears. Dertinger also
found that the a-axis modulated structure a" of fig. 39 is much more sensitive to pressure,
compared to the other two magnetic structures of fig. 39, and it even disappears at relatively
low values of P. Interestingly he observed near-reentrant behaviour also at temperatures
and pressures where the a *-structure had disappeared. Therefore Dertinger concluded that
the near-reentrant behaviour in HoNi2B2C cannot mainly be caused by the presence of the
a" incommensurate magnetic structure. This problem will be further discussed in the next
subsection.
(a) HoNhB1C (b) Yo.15~~J1SNhB.l.Ci-l"'-I

8 ..
·. 8
! I
6 I IJoH=O
0.3T
4 0.24T
4
0.2T
2 0.14T
0
o
iii
5 ...
\!
. " .
20.......--..........,H.......~ ........-.....,
c:: 4 (c) (d) ....~ c*

Gl \! !commensurate ""
£
3 ~y -\\!~! .
iu
III
.
2 ii
• I
I
10
,
1 ~commensurate
-s-
c:: c* ~
0
5 :\ I'.
:! a* : I ~!
. -..-
-,
0.6 ........- -.........,+-.+~~ ......- . , 0.6,......-~-l-~-~-.,..............,
E (e)
'a
~ 0.4 0.4
~
~ 0.2 0.2
I
; :)
o 5 10 o 5 10
Fig. 43. (a and b) Resistivity versus temperature curves for HoNi2B2C and YO.15Hoo.85Ni2B2C. respectively.
showing reentrant behaviour. (c and d) The comparison with the neutron diffraction peak intensities shows that
the a* structure is strongly related to the reentrant behaviour. (e and 0 Upper critical field determined from the
resistive transitions shown in (a) and (b) (Eversrnann et al. 1996; Muller et al. 1997; Kreyssig et al. 1997).
As a general empirical rule for HoNi2B2C samples, the appearance of reentrant

behaviour caused by stoichiometric effects or pressure or magnetic field is always
connected with a reduced value of T c.
4.9.4. Interplay ofsuperconductivity and magnetism

It is obvious that the commensurate antiferromagnetic structure of fig. 39a coexists with
superconductivity in HoNi2B2C, similar as in DyNizB2C. On the other hand, as can be
seen in fig. 43(a and c) the superconductivity is suppressed in the small temperature range
where the two incommensurate magnetic structures of fig, 39(b and c) occur. Now the
question is which of these two structures is more relevant for the near-reentrant behaviour.
In YO.lsHoo.8sNi2B2C the situation is totally different (fig. 43(b and dj), Here the a*
structure again is localized at the same temperatures as the reentrant behaviour but the
c* spiral exists in a very broad range of temperature. Thus the a" structure is more
closely related to the near-reentrant superconductivity in Yo.ISHOO.8SNi2B2C (as well as
Luo.lsHoo.8SNhB2C, Freudenbergeret al. 1998b) than the c" spiral. The same conclusion
follows from a comparison of the temperature dependence of the upper critical field shown
in fig. 43(e and f) with the neutron diffraction data (fig. 43(c and dj), This seems to be
in contradiction to the results of Dertinger (2001) (discussed in the previous subsection)
who found a near-reentrant behaviour of a HoNi2B2C sample in which the a" structure
had been suppressed by pressure. Thus further experiments have to be done to elucidate
the connection between the (near-) reentrant behaviour and the various magnetic structures
in HoNhB2C. In a theoretical analysis the onset of the c* spiral was found to depress
superconductivity (Amici et al. 2(00). However this approach does not take into account
the a" structure. As discussed in subsection 4.9.1 the a" structure is related to Fermi surface
nesting. It was theoretically shown by Machida et al. (l980b) that if antiferromagnetic
ordering is connected with Fermi surface nesting the superconducting state may be heavily
disturbed. For HoNhB2C the strong correlation between the near-reentrant behaviour
and the a" magnetic ordering has first been emphasized by Muller et al. (1997) and has
now been underlined also by Canfield and Bud'ko (2001). The crucial role of the a"
structure manifests itself also in s7Fe Mossbauer spectra that, between TN and T c- show a
magnetic hyperfine field at the Ni-site in HoNi2B2C (Sanchez et al. 1996) and in enhanced
vortex pinning found by local Hall probe magnetization measurements (Dewhurst et al.
1999).
4.10. ErNi2B2C
As can be seen from figs 8 and 26 as well as tables 3 and 7 superconducting ErNilB2C
starts to magnetically order at 6.8 K in a SDW with the modulation vector q parallel to
the a-axis and the Er magnetic moments parallel to b (or vice versa; Sinha et al. 1995;
Zarestky et al. 1995). Thus, as already discussed in subsection 4.1, the case R = Er is the
only exception from the simple rule relating the sign of the second Stevens coefficient aJ
with the direction of the staggered magnetization {11-} with respect to the tetragonal c-axis
in RNhB2C. The modulation vector q is close to modulation vectors found in GdNhB2C,
TbNi2B2C and HoNhB2C and to the nesting vector in the RNi2B2C superconductors (see
subsection 3.1). Measurements of the specific heat and extrapolation of magnetization-
vs.-field curves to zero field indicate, near 2.3 K, a second phase transition to an ordered
state that has a net magnetization of roughly 0.3311-B per Er atom and represents a similar
type of weak ferromagnetism (WPM) as observed in TbNi2B2C (Canfield et al. 1996).
Neutron scattering results confirm the microscopic coexistence of a net magnetization
(with a periodicity of 20 lattice spacings a) with superconductivity in ErNhB2C (Kawano
et al. 1999; Choi S.-M. et al. 2oo1b). Probably this type of coexistence represents domain-
like structures with the period smaller than the London penetration depth rather than
self-induced vortex structures (see subsection 1.3 and Ng and Varma 1997). Kawano-
Furukawa (200 I) analyzed the temperature dependence of a certain critical field Her
which is derived from magnetization-vs-field curves of superconducting ErNi2B2C and
is close to the lower critical field He I. As shown in fig. 44, H cr(T) is sensitive to the
magnetic prehistory of the sample. It is assumed that this phenomenon is connected with
Q)
Q. 400
1 300
32
Q)
u; 200
~
.t: 100
o
2 4 6 8 10
Temperature (K)
Fig. 44. Temperature dependence of the critical field Her (see Kawano-Furukawa 2oo\) in dependence on the
magnetic prehistory of an ErNi282C single crystal. (_) Virgin curve, (e) H (perpendicular to c) decreasing,
(0) H increasing; T c ~ critical temperature, T N ~ magnetic ordering temperature, TWFM ~ onset temperature
for weak ferromagnetism.
the formation of different types of ferromagnetic-domain structures. A commensurate low-

temperature phase with a net ferromagnetic component of about OAILB per Er atom has
been obtained by Jensen (2002) using a mean-field approach. The WFM is assumed to
cause the enhanced flux pinning observed in ErNi2B2C at low temperatures (Gammel
et aI. 2000). Significant vortex pinning is also observed in the temperature range above
2.3 K and has been attributed to the onset of a-axis incommensurate magnetic ordering
(Dewhurst et aI. 200 I a, 200 Ib). Saha et al. (2000) conclude that localized ferromagnetic
spin components at twin boundaries between antiferromagnetic domains cause enhanced
flux pinning. For sufficiently large fields ErNi2B2C shows a hexagonal-to-square vortex
lattice transition (Eskildsen et al. 1997b) similar as observed in nonmagnetic RNi2B2C
superconductors (see section 5).
As can be seen in fig. 45, a series of up to three metamagnetic transitions occurs
in ErNi2B2C if a magnetic field H is applied perpendicular to the tetragonal c-axis
whereas the magnetization-vs.-field curve for H parallel to c is simply increasing, with
a slight negative curvature, as known for usual antiferromagnets (Szymczak et al. 1996;
Canfield and Bud'ko 1997). It was shown by elastic neutron diffraction that the first
two metamagnetic transitions are due to incommensurate antiferromagnetic states with
different values of the a -axis modulation, and the third transition is due to a state in which
the Er moments are ferromagnetically aligned (Campbell et aI. 2ooob).
These magnetic structures are not yet theoretically analyzed. Such an analysis would
have to take into account features of the conduction-electron structure (e.g. Fermi
surface nesting) which influence the 4f-moment magnetism via RKKY interaction as
well as crystalline electric fields resulting in anisotropy of magnetic and superconducting
properties. Thus in ErNjzB2C the upper critical field H c2 is strongly anisotropic and
has some irregularity at TN (see fig. 46) but, contrary to HoNi2B2C, it does not show
near-reentrant behaviour (Cho et al. 1995c; Canfield et aI. 1998; Bud'ko and Canfield
zooo».
8
111
HIJ<I00>
HII<110>
HII<OOl>
10 20 30 40 50
Magnetic Field (kG)
Fig. 45. Magnetization (M)-vs.-field (H) curves, with H parallel to the tetragonal c-axis, showing metamagnetic
transitions in ErNi2B2C (after Canfield et al. 1996).
25
20
~ 15
'(j
I 10
2 468 10 12
T(K)
Fig. 46. Temperature dependence of the upper critical field H c2 for TmNi2B2C and ErNi2B2C single crystals.
Circles: Hila, triangles: Hllc (after Canfield and Bud'ko 2(01).
4.11. TmNi2B2C
As can be seen in fig. 47 the temperature dependence of the specific heat C(T) of
TmNi2B2C shows pronounced anomalies at the critical temperature T c as well as the
magnetic ordering temperature TN, which is different from the behaviour of HoNizB2C
where the magnetic contribution to C(T) dominates (fig. 38).
Neutron diffraction revealed a transversely polarized spin density wave as the ground
state magnetic order in TmNi2B2C with magnetic moments parallel to c (see fig. 26
and table 8) and a modulation vector of (0.093,0.093,0) (Skanthakumar and Lynn
1999). Thus TmNi2B2C is the only magnetic RNi2B2C superconductor with the magnetic
moments parallel to the tetragonal c-axis, which. however. is a natural consequence of CtJ
being positive for Tm3+ (see subsection 4.1. in particular table 8). It has been proposed
by Nergaard et at. (2000) that the magnetic structure of TmNi2B2C is caused by the
ar-------------,
0.4
6
,...
N
:.l:
]
0 0.2 e
t::
U
(a)
0.0 L....o.~ ...........~~ ........ ~~ ..........~_ ...............,
o 100 400 O.S 1.0 I.S
T(K)
Fig. 47. (a) Temperature dependence of the specific heat C as a CIT-vs.-T 2 plot for TmNi282C, The maximum
at T c indicates the transition to superconductivity and the low-temperature upturn is related to magnetic ordering.
The solid line is calculated taking into account contributions from phonons and crystal field levels; (b) specific
heat of TmNi282C at low temperatures with a maximum at TN (after Movshovich et al. 1994).
Anderson-Suhl mechanism discussed in subsection 1.2 i.e, the reduction of the long-
wavelength part of the RKKY interaction in the superconducting state. From crystal field
excitations determined by inelastic neutron scattering the saturated magnetic moment of
TmNi2B2C has been calculated to be 4.7/J.B per Tm site (Gasser et al. 1996) which is
considerably larger than the mean staggered magnetic moment observed by elastic neutron
diffraction (table 7). Gasser et al. (1998b) explained this discrepancy by the presence
of two different magnetic moments, one close to the calculated value and one of about
O.l/J.B as observed by Mulders et aI. (1998) using Mossbauer spectroscopy and /J.SR,
which may be due to carbon-boron disorder. For applied in-plane magnetic fields above
0.9 T Nergaard et al. (2000) found a low-temperature metamagnetic phase with a wave
vector (0.48,0,0) which is relatively close to the nesting vector r = (0.55,0,0) discussed
in subsection 3.1. For fields applied along the e-axis several magnetic flux line lattice
symmetry transitions as well as transitions of the magnetic structure which are hysteretic
have been observed by small-angle neutron scattering (Eskildson et al. 1998, 1999; Paul
et aI. 200 1). Results of neutron scattering experiments for both Hila and H lie have been
summarized by Eskildsen et al. (2001a) in magnetic field-vs.-temperature phase diagrams
for TmNi2B2C.
Figure 46 also shows that, contrary to the case of ErNi2B2C, H c2 of TmNi2B2C is
larger for H.le than for Hlle. This is in accordance with results ofCho et al. (1996b) who
found a larger paramagnetic susceptibility in TmNi2B2C for H lie, resulting in a larger Tm-
sublattice magnetization. Consequently, a larger effective field acting on the conduction
electrons via exchange interaction is expected for Hlle. Nagarajan et at. (1999) showed by
muon spin relaxation (/J.SR)that in TmNi2B2C quasistatic magnetic correlations persist up
to 50 K which possibly represent magnetic short range order along the magnetically easy
e-axis for T > TN = 1.5 K.
3 0.6
r-
~
..!l Z
rr.
0
e >-
;c
<,
02 JA rn
"""
U ;c
f-< 3::
~ Q
::c -;
~ 1 o.z ::s
U g
~
e, F.
en ;.:
.J
0 J
0 2 4 6 8 10
TEMPERATURE (kelvin)
Fig. 48. At low temperatures the specific heat of YbNilB1C (left axis) varies linearly with temperature and the
ratio of specific heat to temperature. y. saturates at 530 mJ mol-I K- 2 (right axis; after Canfield et aI. 1998).
4.12. YbNi2B2C
According to the lattice constants of YbNi2B2C (Siegrist et al. 1994b) Yb should be close
to trivalent in this compound (see fig. 27). From de Gennes scaling roughly valid for
heavy R-elements in RNi2B2C (see subsection 1.4) one would expect YbNjzB2C to be
a magnetic superconductor with T c of about 12 K and a magnetic ordering temperature
of 0.4 K. However, no indications of a superconducting or a magnetic transition were
observed down to ~ 0.05 K (Lacerda et al. 1996; Bonville et al. 1999). These anomalies
are connected with a heavy fermion behaviour of the system. Specific heat measurements
at low temperatures yield a Sommerfeld coefficient y of 530 mJ mol"! K- 2 (see fig. 48)
which is much larger than y for the nonmagnetic LuNi2B2C (~ II ml mol"! K- 2)
indicative of an enhanced electron effective mass due to hybridization between the
4f electrons of Yb and the conduction electrons (Yatskar et al. 1996; Dhar et al. 1996;
Beyermann et al. 1999). This is consistent with broad excitation spectra obtained from
inelastic neutron scattering (Sierks et al. 1999; Boothroyd et al. 200 I; Rotter et al. 200 1).
It was found that the excitation spectrum of YbNjzB2C extends above 150 meY. Three
inelastic peaks were observed by Boothroyd et al. (200 I). These peaks are centered at
energies of 3 meV, 17 meV, 43 meV and resemble CEF transitions. The observed splitting
is approximately twice that predicted by a CEF model for the R site based on an analysis
of the data from the Er, Ho and Tm borocarbides (Gasser et al. 1996). Therefore the CEF
model does not describe YbNi2B2C. High-resolution neutron studies of polycrystalline
YbNi2B2C have shown a clear evidence of inelastic scattering below I meV (Sierks et al.
1999). The experiments on YbNi2B2C single crystals show that the magnetic scattering
below I meV appears to be highly localized in some region of reciprocal space, and may be
associated with the heavy fermion properties (Boothroyd et al. 2001). Another indication
on 4f conduction-band hybridization in YbNi2B2C was obtained (Mazumdar et aI. 2001)
from polarization-dependent x-ray-absorption near-edge structure (XANES) spectroscopy
performed on RNizB2C single crystals (with R = Er to Lu). The combined influence of
the 4f conduction-band hybridization and the crystal field in YbNi2B2C and YbNiBC has
100 VbNI2~C ~
e-o
80 ~.~
c:
.. ....
60 11
-= , ! 11 '-
t
J
c: ,....-,.
Q. ~.-
40 14
.~
12
20 10
0 2 3
r' (K'l
0
0 50 100 150 200 250 300
Temperature (K)
Fig. 49. The temperature dependence of resistivity in the a-b plane of YbNi2B2C. The inset shows the low
temperature data plotted as a function of T 2. Note that the resistivity axis is offset from zero (Yatskar et at. 1996).
been discussed by Rams et a1. (2000) on the basis of the thermal variation of the quadrupole
hyperfine interaction using the 172Yb.
The resistivity ofYbNi2B2C decreases monotonically with decreasing temperature (see
fig. 49), but drops pronouncedly below ""50 K (Yatskar et a1. 1996; Dhar et al, 1996).
A quadratic temperature dependence of the resistivity was found below 1.5 K which is a
characteristic feature of strong-electron correlation (Yatskar et a1. 1996).
A complicated behaviour of the magnetoresistance MR was found by Lacerda et a1.
(1996), Yatskar et a1. (1999) and Christianson et a1. (2001). Above 5 K the MR is negative
and approximately isotropic, whereas at low T it is strongly anisotropic and changes
its sign below 1 K for H .le, see fig. 50. A strong temperature dependence of the Hall
coefficient RH was reported by Narozhnyi et a1. (l999b) which is in contrast with the weak
temperature dependent RH observed for several other borocarbides (see subsection 3.3).
The magnetic susceptibility has a Curie-Weiss behaviour above 150 K (Yatskar et a1.
1996; Dhar et a1. 1996) with the paramagnetic moment close to that of free Yb3+ ions
(see table 8). Below r - 100 K the temperature dependence of X strongly deviates from the
Curie-Weiss law. These deviations and the rather large Weiss temperature (0 ~ -130 K)
indicate a significant 4f conduction-electron hybridization. In accordance with this, data
on NMR of II B show that YbNhB2C manifests local moment behaviour for T > 50 K
and nonmagnetic, itinerant correlated behaviour for T < 5 K (Sala et a1. 1997). The rapid
suppression of superconductivity reported for (Lu,Y)I-x YbxNhB2C systems (Bud'ko
et a1. 1997; Hossain et a1. 1997; Rathnayaka et a1. 1999) has been attributed to changes
from a superconducting regime to a single-impurity Kondo regime to a Kondo lattice
(heavy Fermion regime) as x is increased from zero to one. Interestingly the Kondo
temperature TK ~ 10 K is relatively invariant across the series (Bud'ko et a1. 1997) and
is not much different from the value of T c of YbNi2B2C, estimated above by de Gennes
scaling arguments.
0.10
0.05
S'
i -0.05 UK
1 -0.10 YbNlaBoC
1.8K
H.lI UK
-0.15 Hole
3.0K
-0.20 (al 5.0K
-0.05
S'
i
%
-0.10
1.7K
l -0.15 YbNlaBoC
UK
2.8K
Holl
-0.20 Hie
(b)
5.0K
-0.25
0 5 10 15 20
H(T)
Fig. 50. Normalized transverse magnetoresistance, 6p(H)1 p(O) = [p(H, T) - p(O, T)II p(O, T), vs. the applied
magnetic field at low temperatures for YbNilB1C. The field direction is perpendicular and parallel to the c axis
in (a) and (b), respectively (Yatskar et al, 1999).
5. Vortex lattices in RNhB2C superconductors
5.1. Vortex lattice in non-magnetic borocarbides

Type II superconductors had been discovered by Shubnikov et al. (1937). Abrikosov
(1957) has theoretically proven for these materials that (i) they are characterized by
K > 1/.j2 where K = )../~ is the Ginzburg-Landau parameter. )" the penetration depth
and ~ is the coherence length. The coherence length of ideally pure material. ~o. is
related to ~ by I I ~ = 1I ~o + 1I I Where I is the quasiparticle mean free path (Bardeen
1992). (ii) for HcI < H < Hcz where Hel and H e2 are the lower and the upper critical
field. respectively. a mixed state is formed i.e. flux penetrates in quantized units in non-
superconducting domains called vortices or flux lines in a superconducting matrix and (iii)
in the isotropic case the flux lines form a two-dimensional hexagonal lattice. Such lattices
have been observed in many materials by small angle neutron scattering (SANS). electron
microscopy. magnetooptical or other techniques and. in recent years. also by scanning
tunneling microscopy (STM. see Brandt 1995).
For LuNi2B2C as well as YNi2BzC. at sufficiently high fields applied parallel to the
tetragonal c axis. square vortex lattices as shown in the figs 51a and 52 have been observed
(De Wilde et al. 1997; Yethiraj et al. 1997.1998; Paul et al. 1998; Ghosh and Shrivastiava
'i' 8 b
e 100 0
8.
~ ••
:8- v
I •
.!! o
g> 00
.0
8 ta
c(
•
! 50 • ~s
o 1 2 3
Magnetic Field (T)
Fig. 51. (a) 180 nm x 180 nm STM image of a YNi282C single crystal in a field of /lOH = 0.5 T with Hllc.
showing a square vortex lattice. (b) Hila: hexagonal to square vortex-lattice transition: apex angle Pa changing
from 60 to 95 degrees (closed circle) and Pc changing from 120 to 85 degrees (open circle) as functions of H. At
about 0.8 T the longer diagonal of the rhombus turns from IIa to lie where the latter stale is illustrated in the inset
(after Sakata et a1. 2000).
10K 3.0kOe
Fig. 52. Diffraction pattern of the vortice lattice of a LuNi282C single crystal obtained by SANS at 10 K and a
field of 3 kOe (Eskildsen et al. 200 Ie). Clearly seen is the square symmetry of the vortice lattice at this field.
1998; Song et a1. 1999b; Eskildsen et a1. 2oo1c; Vinnikov et a1. 2oo1a, 2001b; Gammel
et al. 2(01). The occurrence of square vortex lattices can be understood by non-local
corrections to the Ginzburg-Landau-Abrikosov theory (De Wilde et al. 1997) or to the
London model (London and London 1935; Kogan et al. 1996, 1997a, 1997b) which
describes superconductors with large GL parameters K. In the standard Ginzburg-Landau
or London model, there is no coupling between the vortex lattice and the underlying crystal
structure. Therefore, the orientation of the vortex lattice is arbitrary and no structural
transitions of the hexagonal vortex lattice are expected. Taking into account the coupling
between the vortex lattice and the crystal structure, one obtains a nonlocal relation between
the current density j and the vector potential A within a domain size of approximately
~ 0 around the vortex core instead of the local relations between j and A of the standard
[010]
L 1l 001
Fig. 53. Hexagonal-square transition of the vortice lattice schematically.
Ginzburg-Landau or London approaches. The nonlocality which is influenced by the Fermi

surface adds a short-range potential V(r) to the intervortex interaction, with the symmetry
of the crystal. In the case of tetragonal s-wave materials as the borocarbides, this potential
has a square symmetry. It disturbs the isotropic field and current distributions around the
vortex core and makes the vortex current paths of an isolated vortex "squarish" close to the
core, whereas at large distances a circular symmetry is recovered similar to that found in an
isotropic superconductor. Therefore, the influence of this potential on the structure of the
vortex lattice is negligible for large intervortex spacing in the low field limit. In this limit
the vortex lattice is hexagonal. With decreasing intervortex spacing or increasing applied
field Hlle, this potential drives the hexagonal vortex lattice into a square one at a certain
field HO(T). This transition is schematically shown in fig. 53.
This transition proceeds via a rhombohedral distortion along the vortex lattice unit
cell diagonals, thus preserving the orientation with respect to the crystalline lattice. The
transition field Ho can be estimated from the London penetration depth A, which is
160 nm for YNi2B2C in the [I 00] direction. An intervortex distance of 160 nm corresponds
to an applied field of 800 Oe (for a square lattice) or 920 Oe (for a hexagonal lattice)
which approximately coincides with the fieldHo = I kOe at which the hexagonal-square
transition was observed in YNjzB2C for Hlle (Paul et al. 1998; Eskildsen et al. 1997a).
In addition to the hexagonal-square transition, a reorientation transition of the hexagonal
vortex lattice from a state with the diagonal of the rhombic unit cell along [110] direction
to [100] direction has been observed for YNi2B2C (Paul et al. 1998). Figure 51b shows
that for H applied perpendicular to c the transition to a (nearly) square lattice occurs at a
field of about I Tesla and at ~ 0.8 Tesla a reorientation transition of the diagonal of the
rhombic cell takes place (Sakata et al. 2000).
The elastic moduli of the vortex lattice around the transition field Ho of have been
analyzed within the nonlocal London model by Miranovic and Kogan (2001). In particular.
the square vortex lattice was found to be soft with respect to shear displacement along the
square sides [110] or [I 10].
The temperature dependence of the hexagonal-square transition field Ho of LuNi2B2C
was investigated by SANS (Eskildsen et al. 2001c). At temperatures below 10 K, HO
was found to be only weakly temperature dependent. Above 10K, a sharp increase
10 ,
'u
••
•
••
Q)
0~
:
6
------ T
••
• 2: 0.6
J:
5
~ :i
:c
••
4 0.4
Square VL
3
• • •
;;I ••••• 0.2
Rhombic VL
O 00
2 4 6 8 10 12 14 16 0.2 0.4 0.6 0.8
T,K rrr,
Fig. 54. (a) Transition line HO(T) (circles) of LuNi2B2C. Inset: HO(T) (dashed line) predicted by the GL
theory without fluctuations. The solid lines in (a) show H c2(T). (b) Transition lines HO(T) predicted by the
nonlocal London theory including thermal fluctuations for various values of p which is a measure of nonlocality
(after Gurevich and Kogan 2001).
of Ht: was observed. The Ho(T) line curves up to avoid H c2(T) and becomes two-
valued. This means that in a small temperature range with increasing applied field firstly
a transition from a hexagonal to a square vortice lattice and then, at fields H -+ H c2, a
re-entrant transition to a hexagonal vortice lattice is observed. This unexpected behaviour
has been explained by thermal fluctuations in the framework of the nonlocal London theory
(Gurevich and Kogan 2001). Experimental data for the transition line HO(T) of LuNhB2C
and results of numerical calculations HO (T) are shown in the figs 54(a and b), respectively.
It should be noted that nonlocal effects are restricted to the clean limit of type II
superconductivity. They are suppressed by scattering and vanish in the dirty limit. This
suppression was investigated on Lu(Nil-xCoxhB2C compounds (Gammel et al. 1999;
Eskildsen et al. 2000). It is well known that LuNhB2C which is in the clean limit
can be changed into a dirty-limit superconductor by doping with 9% Co (Cheon et al.
1998). Co doping results in a decrease of the mean free path and an increase of the zero
temperature coherence length shifting the transition field Ho to higher fields. In particular,
Ho increases from r - I kOe (for x = 0) over 10.2 kOe (for x = 4.4%) to 14 kOe for
(x = 6%). In the dirty limit (for x = 9%), no transition to a square vortice lattice was
observed (Eskildsen et al. 2000). The transition field can be calculated numerically within
the nonlocal London model.
The symmetry changes of the vortex lattice in borocarbide superconductors affect
their pinning properties as was shown for YNhB2C (Silhanek et al. 2001). For the field
orientation Hlle, the reorientation transition of the vortex lattice mentioned above was
found to be associated with a significant kink in the volume pinning force F p, whereas in
the basal plane (for H .Lc) the signature of nonlocal effects is a fourfold periodicity of F p-
In addition to the vortex lattice occupying the main part of the H - T -phase diagram of
borocarbide superconductors, several other vortex phases have been identified in the non-
magnetic borocarbides. Mun et al. (1996) found, by transport measurements on YNhB2C,
Z76 K.-H. MULLER et al.
a vortex liquid between the vortex lattice phase and the normal state and a vortex glass
phase at low temperatures and high magnetic fields. A vortex glass transition is also
suggested by results of Eskildsen et al. (1997a) who found, for YNizBzC as well as
LuNizBzC, a static disorder of the square vortex lattice for H > 0.2H cZ where collective
pinning of the flux lines breaks down. The change from vortex lattice through vortex glass
and then to vortex liquid has also been seen by NMR measurements (Lee et al. 1999,2(00).
Peculiarities of the vortex pinning near H cZ and, in particular, the peak effect in the critical
current density ic observed in borocarbides (Eskildsen et al. 1997a; Song et al. 1999b) can
be explained by softening of the shear moduli of the vortex lattice near H cZ (Larkin and
Ovchinnikov 1979). Additionally, a pronounced dip anomaly in the ac screening response
in the mixed state of YNizBzC and LuNhBzC single crystals was observed which was
found to be connected with the peak effect in ic (Narozhnyi et al, 2000b).
5.2. Vortex lattice and magnetic order in ErNizBzC and TmNi2BzC

An interesting question is whether the subtle effects of non-locality and, in particular, the
hexagonal-square transition of the vortex lattice would be preserved in the superconducting
state of magnetic superconductors such as RNi2BzC with R = Er and Tm.
In ErNi2B2C single crystals, this transition was observed by SANS investigations and
magnetic decoration at temperatures above as well as below the Neel temperature TN.
At T = 3.5 K, i.e. in the antferromagnetic state, the hexagonal-square transition occurs
for the field orientation Hllc at above Ht: '" 500 Oe (Eskildsen et al. 1997b). Whereas
the square lattice was found to be aligned with the [110] direction of the host crystal,
the hexagonal lattice has domains aligned along [100] or [010]. Of special interest is
the question whether the vortex lattice is influenced by the magnetic order. For both
symmetries of the vortex lattice, a significant coupling between the magnetic ordering
and the flux lines was evidenced in the weakly ferromagnetic state below 2.5 K by a
rotation of the flux lines away from the direction of the applied field Hllc, whereas at
higher temperatures the vortex lattice was found to be well aligned with the applied field
(Yaron et al. 1996). The angle between the vortex lattice and the applied field increases
with decreasing temperature up to about 10 at 1.5 K.
Contradictory results were reported for TmNi2B2C for the field orientation Hllc. In
the paramagnetic state, no square lattice, but rather a distorted rhombic lattice was found
by Paul et al. (200 I) by SANS studies. On the other hand, only the square vortex lattice
was reported by Eskildsen et al, (2001a) in the range of low magnetic fields, as well in
the paramagnetic and the anti ferromagnetic state. Detailed SANS studies of the magnetic
structures and the vortex lattice were performed on a TmNhB2C single crystal below
TN '" 1.5 K (Eskildsen et al. 1998, 2001a). In the low-field region (H < 2 kOe) the
same incommensurate modulated state was observed as in zero magnetic field (Lynn
et al. 1997). The Tm spins order into a squared spin density wave with a modulation
vector q = 0.94(a* + b*) and the moment parallel to the c-axis. In this field range,
H < 2 kOe, a square vortice lattice was found for all temperatures below TN. Above
2 kOe a magnetic transition into a more complex structure is observed with additional
peaks of the SANS signal appearing around the [100] and [010] directions. Coincident
with the magnetic transition at 2 kOe, the vortice lattice undergoes a rhombic distortion
and becomes hexagonal for fields above 4 kOe. There is a second magnetic transition
probably into a saturated paramagnetic state at H = 10 kOe and T = 100 mK. These
studies revealed an intimate coupling between the vortex lattice and the magnetic structure.
However, the origin of the vortex lattice transitions in relation to the magnetic transitions
is not understood so far.
5.3. Vortexpinning and magnetie order

Studies on vortex pinning in ErNi2B2C (Dewhurst et al. 2001a, 2001b) and HoNhBzC
(Dewhurst et al. 1999) revealed significant bulk pinning for H lIe only in the temperature
range in which the a" incommensurate magnetic structure exists (T < 6 K for ErNizBzC,
5 K < T < 6 K for HoNhBzC). In HoNhBzC, the superconductivity is weakened in
the narrow temperature range 5 K < T < 6 K in which the incommensurate a" and e*
magnetic structures occur (see figs 43(a, c, e)). It was suggested that the enhanced pinning
in the same temperature range is caused by a direct interaction between the vortice lattice
and a" magnetic states or domains thereof (Dewhurst et at. 1999). Two scenarios were
discussed: (1) the suppression of H c2 by magnetic pair-breaking might be accompanied by
a corresponding periodic modulation of the coherence length ~ 0 oc H cZ -0.5 which could
result in core pinning of vortices; (2) the domains connected with the modulation of the a"
magnetic structure along the a-axis may cause pinning for vortices by the interaction with
the domain walls.
Magneto-optical investigations on ErNizBzC single crystals for the field direction H lie
provided evidence for the formation of antiferromagnetic domain walls at T < TN and their
interaction with the vortex lattice resulting in enhanced pinning (Saha et at. 2(00). This
interaction was found to be mediated by a weak ferromagnetic spin component localized
in the domain walls. The weak loeal ferromagnetism setting in immediately below TN
is expected to suppress the superconductivity at the domain walls by pair-breaking (Saba
et al. 2(00). On the other hand, no significant increase in pinning was found at T < TN for
the field direction H .Lc (James et al. 2(01) in which the vortices are aligned perpendicular
to the e-axis. Because the planar domain boundaries are directed along [110] and [110]
with the ferromagnetic moment parallel to the domain plane direction (e-axis), these planar
pinning centers are expected to become ineffective when the vortices are tilted away from
the e-axis. Therefore, the observed pinning anisotropy below TN strongly supports the idea
that magnetic domain boundaries are responsible for the significant bulk pinning found
in ErNizB2C in the antiferromagnetic state below TN for HI/e. Additionally, a strong
increase in bulk pinning was observed in ErNhBzC in the state of weak ferromagnetism
below T = 2.5 K for both orientations Hlle and H .Lc (Gammel et al. 2000; James et al.
200 I). The origin of this pinning effect is not understood so far. As possible explanation of
the enhanced pinning below T = 2.5 K, a point disorder pinning mechanism was proposed
(James et al. 200 1).
6. Superconductivity in R(Ni,ThBzC and (R, R')NizBzC
6./. R(Ni,ThBzCeompounds(T = Co, Cu. Pd. Ptete.)

As can be seen in table 2, the LuNizBzC type structure is formed with many transition-
metal T elements and it is natural to investigate series of mixed compounds R(Ni,ThBzC
500.0
Q'
c 480.0
~
CD
460.0
x Co
• Cu
~ 55.0 - - Co (rigid band filling
-~ Cu (rigid band filling)
45.0
<II
!!
! 35.0
ZJ 25.0
Z
0.2 0.4 0.6 0.8
doping level x
Fig. 55. Debye temperature. liD. and density of states at the Fermi level. N(EF). for Y(Nil-xCox12B2C and
Y(Nil_xCUx 12B2C as a function of the CoICu substitution level x. Symbols: results derived from a relativistic
band calculations in the atomic sphere approximation. Curves (in lower panel): rigid band model. After Ravindran
et al. (1998).
in order to search for improved properties but also to get more insight into the microscopic
mechanisms underlying the superconductivity and magnetism in these materials. Most
work has been done in replacing Ni in RNi2B2C by its neighbors in the periodic table
i.e. Co, Cu, Pd, Pt, but also by other transition metals, see e.g. Hilscher and Michor (1999).
The transition temperature T c is reduced by Ni -+ Cu (R = Y, Choi et al. 1998) as
well as Ni -+ Co (R = Y: Schmidt et al. 1994; Hoellwarth et al. 1996; R = Dy, Ho,
Er, Tm, Lu: Schmidt and Braun 1997; R = Ce: El Massalami et al. 1997; R = Gd:
Bud'ko et al. 1995b, 1995c; R = Ho: Lynn et al. 1996; R = Er: Felner et al. 1997a
and Bud'ko and Canfield 2000b; R = Lu: Cheon et al. 1998). This can be qualitatively
understood within the framework of a simple rigid-band picture assuming a more or less
rigid band structure across the substitutional series and a varying degree of band filling
due to the different number of conduction electrons in Co, Ni, Cu. Thus the Fermi level
EF is shifted away from the local maximum of N(EF) or from the state with optimum
conditions for occurrence of superconductivity which is found at T = Ni. More detailed
electronic-structure calculations of Ravindran et al. (1998) have shown that the rigid-band
model reproduces N(EF) rather well (see fig. 55). However for larger x the value of
N(EF) of Y(Nil-xCoxhB2C compounds again increases with increasing x and the two
parent compounds for x = 0 and x = 1 do not much differ in their N(EF). Nevertheless
YC02B2C is neither a superconductor nor a magnetic system. Ravindran et al. (1998) have
concluded that this difference is due to stiffening of the lattice with increasing x. These
authors emphasize that, although both Co and Cu have an ionic radius of 0.72 A, which
is larger than that of Ni (0.69 A), the substitution of Co for Ni in YNhB2C results in a
contraction of the lattice, whereas Ni ~ Cu leads to lattice expansion. Also the ratio cIa of
the lattice parameters depends on the doping level. Such local-structure aspects may affect
the superconducting properties in addition to the simple effects of band filling.
Suppression of superconductivity has also been investigated for Ni replaced in YNhB2C
by other 3d-elements such as Fe and Ru (Bud'ko et a1. 1995c) and Mn (da Rocha et a1.
200 1). Substitution of Co or Cu for Ni has also been done in quaternary superconducting
compounds with alternative lattice structures such as YNil-xCuxBC, LuNil_xCuxBC
(Gangopadhyay and Schilling 1996) and La(NiJ-xCuxhB2N3, La(Nil-xCoxhB2N3
(Michor et a1. 1998).
An interesting problem is how the properties of RNhB2C change upon Ni replacement
by the isoelectronic metals Pd or Pt. Modest decrease of T c with increasing doping level
has also been reported for substitutions Ni ~ Pt or Pd in ErNhB2C and TmNi2B2C
(Bonville et a1. 1996; Feiner et a1. 1997b). Interestingly, the magnetic ordering temperature
TN decreases for these substitutions in the case of TmNi2B2C but it increases (even up
to TN > T c ) for ErNhB2C. This difference in the behaviour of the Tm- and Er-based
compounds is not yet understood (Feiner et a1. 1997b).
In summary the change of T« with varying x in R(Nil-x TxhB2C superconductors
can rather well be understood taking into account the variation in the lattice structure
and the band-filling levels. However there are properties as e.g. the anisotropy of the
superconducting gap (Yokoya et a1. 2000) or the field dependence of the electronic specific
heat (Lipp et a1. 200 1) or the vortex core radius (Nohara et a1. 1999) in Y(Ni l-xPtx hB2C
which cannot be explained considering the mixed compounds as more or less homogeneous
systems. It will be discussed in the next subsection that disorder on the lattice sites has a
remarkable influence on the properties of such mixed-compound superconductors.
6.2. Effects ofdisorder

Since R = Sc, Y, La and most of the 4f elements form RNhB2C compounds with the
LuNhB2C-type structure it is relatively easy to prepare and investigate pseudoquaternary
compounds (R, R')Ni2B2C in order to realize intermediate states. (It should be noted,
however, that for large difference of ionic radii of Rand R' miscibility gaps were found
for x near 0.5, see Freudenberger et a1. 2oo1b.) This may help to better understand the
intrinsic mechanisms for superconductivity and magnetism and their interplay in these
compounds. In particular, Freudenberger et a1. (1998a) and Fuchs et a1. (2001) have
investigated (R, R')NhB2C compounds with both elements Rand R' being non-magnetic
as e.g. Y and Lu. For a fictive 'gray' system with a fictive R ion of averaged size resulting
in averaged lattice constants the value of T c would be on the upper curve in fig. 9 with a
value even higher than T c of both parent compounds. However, the real pseudoquaternary
system Yx Lu l-xNhB2C has a considerably lower value of T c than the 'gray' system. As
shown in fig. 56 the concentration dependence of T c is non-monotonic with a minimum
near x = 0.5. A similar behaviour was found also for other quantities characterizing the
electronic state of the system as the upper critical field H c2* and the parameter ex (from
H c2(T) = H c2*(1 - T fTc) I+a) which is a measure for the positive curvature of H c2(T),
the residual resistance ratio RRR = Pn(300 K) f Pn(T d where Pn(T) is the normal-state
16 K
15 K
16 K 0.3
15 K 0.2
12 T
0.2
0.1 ~ 10 T
0.7
lOT
8T ~ 0.5
0.3
20
40
0
\0
Lu 0.2
RRR
c
x 0.6 0.8
~
V
18
Lu 0.2 x 0.6 0.8 V

(a) (b)
Fig.56. Concentration dependence of various electronic properties of polycrystalline Yx Lu 1_ x Ni2B2C obtained

from measurements of (a) the resistivity and (b) the specific heat. The meaning of the parameters is explained in
the text.
resistivity, as well as the two parameters y Nand f3 describing the field dependence of the
electronic specific heat in the mixed state. C '" y (H) T, namely
(8)
where YN is the normal-state Sommerfeld constant (Fuchs et al. 2001; Lipp et al.
2(01). These quantities have their highest values for the pure compounds and show a
minimum near x = 0.5. This behaviour has been attributed to disorder-induced local lattice
distortions due to the different size of the ionic radii of Y and the Lu. A quantitative
analysis shows that the sensitivity to the site disorder is most pronounced for the magnitude
of H c2(0), somewhat less for a and weakest for T c . Therefore, the parameter H c2(0)
can be considered as the most sensitive measure of the perfection of the clean limit
superconductor.
The field dependence of the linear-in-T electronic specifice heat contribution y(H)T
of the polycrystalline YxLul-xNi2B2C samples of fig. 56 is shown in fig. 57. YNjzB2C
and LuNjzB2C exhibit significant deviations from the usual linear y(H) law which are
described in eq. (8) by the parameter f3. These deviations are even larger than those reported
for a YNjzB2C single crystal and for a polycrystalline LuNjzB2C sample (Nohara et al.
1997) in which y(H) was found to follow a square-root law y(H) ex JH corresponding to
f3 = 0.5. In particular, a very strong sublinearity of y(H) (with f3 = 0.67) was observed for
the polycrystalline LuNjzB2C sample in fig. 57. The origin for the observed y(H) ex H l-fJ
dependence will be discussed in more detail at the end of this section. As shown in fig. 57,
the deviation from the linear y(H) law is significantly reduced with increasing disorder
-
~
~
i'
0.6
0.4 X =0.25
0.5
0.2 0.75
0.0
0.0 0.2 0.4 0.6 0.8 1.0
HI HC2(O)
Fig. 57. Specific heat contribution y(H) of the vortex core electrons in the mixed stale (normalized by the
Sommerfeld parameter y N) of the Y x Lu I-x Ni2 82C samples from fig. 56 as function of the applied magnetic
field (normalized by H <2(0)). The straight line y(H) ex H corresponds to the usual s-wave behaviour in the dirty
limit.
reaching values of fJ '" 0.4 in the range of Y concentrations between 0.25 and 0.75 (see
also fig. 56).
Growing degree of substitutional disorder results in a reduction of the other above-
mentioned quantities. However, the microscopic mechanism, which mediates disorder to
T c and to the other physical quantities, is not yet clarified. Typical scenarios for disorder
effects could be: the peak of the density of states at the Fermi level, N(EF), may be
broadened or the phonon spectrum may be modified by disorder (Manalo et al. 200 1) or
the scattering rate of the conduction electrons may increase.
As already discussed in subsection 3.2, the latter mechanism has been successfully
treated in a two-band model for H c2(T) taking into account the dispersion of the Fermi
velocity in these clean-limit type II superconductors (Shulga and Drechsler 200 I; see also
subsection 3.2, in particular fig. 20). In this model two bands of electrons with different
Fermi velocities are considered. The electrons with the low Fermi velocity have a strong
electron-phonon coupling and are responsible for the superconductivity, whereas by the
electrons with the large Fermi velocity, which have a moderate el-ph coupling only, the
values of H c2(0) and T c are reduced. The typical positive curvature of H c2(T) near T c
is caused by interband coupling between the slow and fast electrons. This model predicts
a transition from the clean to the quasi-dirty limit for increasing scattering rate of the
conduction electrons on impurities. Within the clean limit, H c2 (0) and the parameter ex
for the positive curvature of H c2(T) near T c decrease with increasing scattering rate (see
fig. 20). In this way, the observed minimum of H ez" and ex for x ~ 0.5 (see fig. 20) can be
explained by the increased scattering rate in the samples with substitutional disorder at the
rare-earth site. The comparison of the two-band model (fig. 20) with the experimental data
for YxLul-xNjzB2C (fig. 56) indicates that also the most disordered sample is not yet in
the dirty limit because their curvature remains positive.
From the experimental data for the Sommerfeld constant YN in fig. 56, conclusions
on the influence of substitutional disorder on the rare-earth site of YxLul-xNi2B2C
282 K.-H. MOLLER et a1.
OJ
0
<, 4.2
Ul
Cl
---Y.Lu, .•NhBzC
------
]
~
4.0 CPA-prediction
0'
'Z
21
N""'
lo<
20 experimental data
0
E
...,
<,
S
19
"
»-
z 18
"
1.10
s:
----------------
?- 1.05
OJ
-< 1.00
phenomenological
0.95
0 0.5
X
Fig. 58. Composition dependence of the density of states N(EF) at the Fermi level (0) of YxLul_xNi2B2C
calculated by CPA, experimental data for the Sommerfeld parameter YN and the phenomenologically extracted
values of the electron-phonon coupling constant Aei-ph (in this article usually written as Aph), using eq. (9).
compounds on their electronic structure can be drawn. According to the well known
expression
(9)
the Sommerfeld constant YN is closely related to the density of states at the Fenni level
N(EF) and the electron-phonon coupling constant Aph. Calculations of N(EF) within
the coherent potential approximation (CPA) revealed that N(EF), as function of the
Y concentration, passes through a minimum which only slightly deviates from the linear
interpolation between the values for the pure samples (Rosner et al. 2000, see upper panel
of fig. 58). The maximum deviation from this dashed line in fig. 58 is only about 1%
and can not explain the observed variation of the Sommerfeld constant by about 10%.
Therefore, taking into account eq. (9), it was concluded that the local lattice distortions
due to the different size of the Y and Lu ions in the YxLul-xNhB2C compounds mainly
reduce the electron-phonon interaction (Rosner et al. 2000). The dependence of Aph on
the Y concentration resulting from eq. (9) and N(EF) is shown in the lower panel of
fig. 58. With values for Aph between 1.0 and 1.1, medium coupling strengths are estimated
for the Yx Lu I-x Ni2B2C compounds. An alternative (to the non-monotonic variation of
electron-phonon interaction with increasing of x as discussed above) interpretation of the
minimum of YN(X) observed in YxLUI-xNi2B2C was proposed by Manalo et al. (2001).
Analyzing the thermodynamic properties of YxLul-xNi2B2C in the framework of the
Eliashberg theory including anisotropy effects, they explained the minimum of YN(X) by a
10
9 lu on Vslles
E
£ •
~
8
:I:
Q
6 ;......- quasl-dlrty limit
0.0 0.1 0.2 0.3 0.4 0.5
Impurity concentration
Fig. 59. Suppression of the upper critical field H c2(O) in YxLul_xNi2B2C (filled circles) and
Y(Nil_xPtx hB2C (open circles). After Lipp et al. (2001).
corresponding reduction of the density of states N(EF) at medium x values, whereas Aph
was found to change monotonously between the Aph values of YNhB2C and LuNhB2C.
As noted above, the dirty limit is not reached in YxLUI-xNhB2C, even in the
case of maximum disorder. On the other hand, the transition from clean to dirty limit
superconductivity has been reported for Y(Ni,PthB2C by Nohara et al. (1999) by
substituting 20% Pt on Ni sites. It is not unexpected that the superconducting properties
are much more affected by disorder in the Ni-B network than in the rare-earth subsystem
which plays the role of a charge reservoir only, whereas the Ni-B network is assumed
to be much more involved in the superconductivity of the quaternary borocarbides.
Systematic investigation of the influence of substitutional disorder on the properties of
Y(Nil-xPtxhB2C compounds were performed in a wide concentration range x ~ 0.75 by
Lipp et al. (2001). It should be noted that the phase formation of compounds with larger Pt
concentrations is much more complicated than of those with small Pt content because these
RPt2B2C phases become metastable for decreasing size of the rare-earth element R (Cava
et al. 1994<1). Therefore, no single-phase YPt2B2C could be synthesized. Improvement of
the phase purity of YPt2B2C has been obtained in samples in which platinum had been
partially replaced by gold (Cava et al. 1994e; Buchgeister et al. 1995). In fig. 59, the effect
of PI (on Ni sites) and Lu impurities (on Y sites) on HdO) of Y(NiJ-xPtxhB2C and
YxLul-xNi2B2C, respectively is compared in the range of x ~ 0.5. It is clearly seen that
H c2 (0) is much stronger suppressed by Pt impurities on Ni sites than by Lu impurities
on Y sites. The quasi-dirty limit in the Y(Nil-xPtxhB2C compounds is observed at a
Pt concentration of x = 0.1, where H c2(O) has its lowest value. The positive curvature of
H c2(T) which is typical for the clean limit practically disappears in the quasi dirty limit.
This is shown in fig. 60, where the influence of increasing disorder on the superconducting
parameters of Y(Nil-xPtx hB2C (Lipp et al. 2002) is summarized.
An unexpected concentration dependence is found for the parameter fJ which describes,
according to eq. (8), the deviation of the field dependence of the electronic specific heat
in the mixed state from the linear law expected (Nohara et al. 1997) for isotropic s-wave
superconductors in the dirty limit. The large deviations from this linear y (H) law observed
16 K
14 K
12 K II-+-+-+-+--+-+-+--+--I-+-+-tl
0.2
15
0.2 0.4 0.6
Pt concentration x
Fig. 60. Concentration dependence of various properties of polycrystalline Y(Nil-xPtxhB2C obtained by
specific heat measurements: transition temperature T c; exponent IX and parameter H c2* from eq. (6); upper
critical field H c2(0) at T = 0, where the dotted line schematically describes the dirty limit corresponding to the
isotropic single band case (in reality there is a finite intersection with the field-axis for the dotted asymptotic
line, see Shulga and Drechsler 2002); exponent f3 of eq. (8) for the curvature of the electronic specific heat in the
mixed slate and Sommerfeld constant YN (after Lipp et aI. 2001).
for YNi2B2C become smaller in the quasi-dirty limit, however, they do not disappear.
It was pointed out by Lipp et al. (200 1) that for intermediate deviations from linearity
of y(H) ({3 = 0.15-0.35) the specific heat data of borocarbides at low magnetic fields
can be discussed in the context of the conventional s-wave picture as well as within the
framework of a d-wave model in the dirty limit. At low fields, the HlnH dependence
of y(H) predicted for d-wave pairing in the dirty limit (Barash et al. 1997; Kiibert and
Hirschfeld 1998) is not very distinct from the H l-fJ behaviour which favours s-wave
superconductivity. This is illustrated in fig. 61. Thus, considering results on y(H) only,
a possible unconventional pairing in borocarbies cannot be ruled out.
But not only the peculiarities of the physics of the vortex state in the quasi-dirty limit are
not understood so far. Also the basic understanding of the vortex physics in the clean limit
is still far from a satisfactory level. Experimental y(H) data for YNhB2C and LuNhB2C
reported by Nohara et al. (1997) can be described approximately by y(H) ex.jH or, with
eq. (8), by {3 = 0.5, while even higher values of {3 were found for the YNhB2C and
LuNhB2C samples presented in fig. 56b and fig. 57 (Lipp et al. 200 1; Fuchs et al. 200 1). A
nonlinear H dependence close to y(H) ex.jH has been reported for some unconventional
superconductors with gap nodes in the quasiparticle spectrum of the vortex state such as
YBa2Cu307 (Wright et al. 1999) and the heavy fermion superconductor UPt3 (Ramirez
et al. 1995), but also in some clean s-wave superconductors such as CeRu2 (Hedo et al.
1998) and NbSez (Nohara et al. 1999; Sonier et al. 1999). Attempts to explain the unusual
y(H) dependence of borocarbides include a shrinking of the vortex core with increasing
Y(Nlo.75Pfo.~2B2C
.r- 16
r(lf) - H"/I .....•..
~
e
~
12
.§, 8
P=O.17 ~
.'. \ ..«
r(lf) - HlnH
~ 4
1 2 3 4
IIo H (T)
Fig. 61. Magnetic field dependence of the specific heat contribution y(H) of the vortex core electrons in the
mixed state for Y(Nio.75Pto.25h B2C, The dashed line is a fit according to eq. (8) with fl = 0.17. the solid line
corresponds to the y(H) Q( H In H dependence predicted by ad-wave model in the dirty limit (Barash et aI. 1997;
Kubert and Hirschfeld 1998).
applied field (Nohara et al. 1999; Sonier et al. 1999), field-induced gap nodes (Hedo et al.
1998) and d-wave symmetry (Wang and Maki 1998).
The y(H) law in conventional s-wave superconductors is linear because all quasipar-
ticles are confined within the vortex core of radius ~ (coherence length). Therefore, the
quasiparticle density of states as a function of the field H, N(H), is proportional to the
number of vortices which scales with the magnetic field resulting in N(H) ex NF~2H,
where N F is the DOS at the Fermi level in the core (Izawa et al. 200 I). Experimental data
for the microwave surface impedance in the vortex state of YNhB2C (lzawa et aI. 2(01)
are consistent only with a linear N(H) dependence. This means that the number of qua-
siparticles within the core is field-independent since the flux flow dissipation causing the
microwave surface impedance mainly comes from the quasiparticles localized in the cores.
This result excludes the scenario of the core shrinking with magnetic field as an origin of
nonlinear y(H) and indicates that delocalized quasiparticle states around the vortex cores,
similar as in d-wave superconductors, are responsible for the nonlinear y(H) dependence
ofYNi2B2C (lzawa et a1. 2(01). The presence of such delocalized quasiparticles has been
verified in LuNi2B2C and YNi2B2C by investigation of the thermal conductivity (Boaknin
et a1. 2001; Izawa et a1. 2002, see subsection 3.3.3).
Recently the strong sublinear field dependence of the electronic specific heat has been
addressed theoretically for an s-wave two-band superconductor by Nakai et a1. (2002) in
the context of MgB2. Within the framework of Bogoliubov-de Gennes theory (i.e. the BCS
theory extended to inhomogeneous systems) under some additional assumptions: (i) equal
densities of states N(EF) and Fermi velocities of holes and electrons in each band, and
(ii) no attractive interaction of quasi particles within the second band, i.e. only an induced
attraction due to Cooper pair tunneling from the first band, Nakai et a1. (2002) found that
the curvature exponent fJ (in our notation) depends sensitively on the gap ratio of the two
gaps on the strongly and weakly coupled bands. The larger that ratio, the more pronounced
is the sublinear behaviour. Slightly above the lower critical field where the vortices start to
286 K.-H. MULLER et 31.
interact, the smaller gap is somewhat suppressed and the number of quasiparticles outside
the core is enhanced which mimics an unconventional behaviour of the specific heat in
the mixed state. In our opinion that appealing picture can be qualitatively transfered to
the nonmagnetic borocarbides under consideration. Then in other words, at least in the
clean limit the two (multi)-band character of the borocarbides manifests itself by two
unusual curvature exponents a and f3, the former of the upper critical field near T c and
the latter of the sublinear field dependent specific heat. There is also a recent alternative
attempt to explain the nonlinear field dependence of specific heat by a special single band
anisotropic (s + g-wave)-gap model which results in f3 = 0.5 (Maki et al. 2002). More
detailed theoretical and experimental investigations are desirable to quantify the influence
of realistic density of states, disorder, anisotropy and other effects on the magnitude of f3
in the general multiband approach as well as in this single band (s + g-wave)-gap model.
6.3. Magnetic impurities in a nonmagnetic superconductor

For the investigation of the interplay of local moment magnetism with superconductivity
in (R,R')Ni2B2C compounds at least one of the two elements Rand R' should be chosen
to be magnetic. Figure 62 shows the influence of dilution of R = Lu and Y by R' = Ho,
Dy, or Gd on the superconducting transition temperature T c. For Gd, Y l-xNhB2C the
dependence of T; on x, or the effective de Gennes factor DG = xDG[R] + (I - x)DG[R']
where DG[R] is the de Gennes factor of the free (Hunds rule) R3+ ion, can be well
described by the expression
(10)
of the classical theory of Abrikosov and Gor'kov (1961) for magnetic impurities in a non-
magnetic superconductor (solid line in fig. 62a; see also subsection 1.3). In eq. (10), Te o
is the superconducting transition temperature without magnetic impurities, N(EF) is the
conduction electron density of states at the Fermi level, I is a measure of the exchange
-12
~10
~8
6
4
2 2
(a) (b)
OIL......................._ .......................L-...................
~ o........-'--..I.~ .............................--9'PQ-~
o 23456 7 o 2 3 4 5 6 7
DG DG
Fig. 62. Dependence of the superconducting transition temperature Tc on tbe effective de Gennes factor DO
for the non-magnetic superconductors (a) YNi2B2C and (b) LuNi2B2C. both diluted by the magnetic rare earth
elements Ho, Dy, Gd. The solid line in (a) corresponds to the theory of Abrikosov and Gor'kov (1961).
coupling between conduction electrons and magnetic R3+ ions, and 1/1 is the digamma
funtion. The solid line in fig. 62a was found to describe also the T c-versus-DG-dependence
for rs, Y l-xNhB2C (Freudenberger et al. 2000). For Dy or Ho impurities in LuNi2B2C
and YNhB2c' the Tc-versus-DG-curves in fig. 62 become more flat i.e. the pair breaking
effect of Dy and Ho is less pronounced than that of Gd. This is caused by the influence of
crystalline electric fields acting on Dy 3+ and H0 3+ thus reducing the magnetic degrees of
freedom of these ions (Cho et al. 1996c; Freudenberger et al. 1998b), as described by Fulde
and Keller (1982) in a modified Abrikosov-Gor'kov-theory, As can be seen in fig. 62, the
decrease of T e with increasing DG is stronger for (Lu,R')NhB2C than for (Y,R')NbB2C
(R' = Ho, Dy, Gd). Obviously this observation is related to the considerably smaller ionic
radius of Lu 3+ compared to that of y 3+ , Ho3+. Dy 3+ and Gd 3+ . Thus in (Lu, R')NbB2C
larger distortions in the rare-earth sublattice will occur than in (Y,R')Ni2B2C, which
might result in enhanced pair breaking. The detailed mechanism for this effect is still
unknown. Besides changes in the electronic properties caused by the change of average
lattice constants and the effects of disorder on the electronic density of states and on the
scattering rate. as discussed in the previous subsection. also the parameter I describing the
exchange interaction between the 4f and the conduction electrons may be more strongly
modified by the stronger lattice distortions (Michor et al. 2000). Interestingly, EI-Hagary
et al. (2ooob) found a correlation between the specific heat jump associated with the
superconducting transition. f::!..C. and the transition temperature T e. f::!..C ,..", T e2• being valid
for all superconducting (YI-xR'x)Ni2B2C compounds (R' = Gd, Dy, Ho, Er) including
the parent compounds DyNi2B2C (with TN > T e) and HoNhB2C, ErNhB2C (TN < T d.
This observation was attributed to the Sommerfeld constant y as well as the density of
states N (E F) to be almost constant within this series of heavy rare earth solid solutions
and their boundary compounds.
Another interesting interplay of disorder and local-moment magnetism has been
observed in Tb, Y'-xNi2B2C single crystals with 0 < x < 0.4 (Bitterlich et al. 2001; see
also Cho et al. 200 1) with respect to the magnitude. anisotropy. and the shape of the H e2(T)
curves (see fig. 63). First with increasing Tb concentration one observes the expected
decrease of the general magnitude of H cz- But this decrease develops rather differently
for fields applied parallel or perpendicular to the basal plane « 100) direction; the in-plane
anisotropy is very small): there is a much steeper decrease for fields in in-plane direction.
Hence the anisotropy of H e2 changes its sign already at a small Tb content of x ~ 0.1. The
maximal anisotropy occurs near x ~ 0.2 where macroscopic antiferromagnetism in the Tb
subsystem does not develop. However. locally antiferromagnetically ordered cluster might
occur. The shape of H e2(T) changes. too. Deviations from eq. (6) do appear although
a positive curvature remains near Tc in spite of the disorder present. Compared with
the nonmagnetic borocarbides discussed above an even more pronounced S-like shape
develops. Quite interestingly. the heavy fermion- weak-SDW superconductor URU2Sh
(Brison et al. 1995) exhibits nearly the same shape of H e2(T) caused there by ordering
of weak U-derived moments. The mechanism of these phenomena is not yet investigated.
Strong magnetic pair-breaking effects have been reported for (Y,R)Pd2B2C. Also in
these compounds the drop in T e follows de Gennes scaling. with the exception of R = Ce,
Eu and Yb (Ghosh et al. 2001).
288 K.-H. MOLLER er al.
1.5
5
(a) (b)
f=' 4
"0
E 1.0
TbO.2Vo.sNI 2B2C
"0
~ 3 ~
(ij
(ij
.5:2 o
'E
o 2
~
'':;
~
Tbo.,VO.IINI2B2C ...o 0.5
8:
Q)
0.
0.
::> ::>
O 0.0
2 4 6 8 10 12 2 4 6 8 10
Fig. 63. Temperature dependence of the upper critical field. H c2(T). (a) of YNi2B2C and Tbo.l YO.9Ni2B2C
and (b) of Tbo.2 YO.gNi2B2C single cryslals for two directions of the applied magnetic field: H!I[OOII (closed
squares) and HII[IOO] (open squares). after Bitterlich et al. (2001).
6.4. Nonmagnetic impurities in an antiferromagnetic superconductor

As can be seen in fig. 62, for medium and high concentrations of Dy in (Y,Dy)Ni2B2C
or (Lu,Dy)NjzB2C the Tc-versus-DG-curves are strongly non-monotonic and even go to
T c = O. The steep branches of these curves for high Dy concentrations can be interpreted
as being based on electron scattering on non-magnetic (Y or Lu) impurities in the
antiferromagnetic superconductor DyNjzB2C. This strong depression of superconductivity
has been interpreted as pair breaking due to creation of magnetic holes (Nagarajan
2001). However it had been shown in the theoretical analyses presented by Morozov
(1980), Zwicknagl and Fulde (\ 981) and Nass et al. (\ 982) that other types of non-
magnetic impurities should also be efficient in suppression of superconductivity (see also
Morosov 2001). As a consequence of this phenomenon the value of T c of DyNjzB2C
is very sensitive to the presence of non-magnetic impurities or, more generally, to the
metallurgical state of the samples. May be that this is the reason why the identification
of superconductivity in DyNi2B2C was delayed compared to the other borocarbide
superconductors and the published experimental data on the properties of DyNjzB2C as
well as of Dy-rich pseudoquatemary compounds (Y,Dy)Ni2B2C scatter much (Hossain
et al. 1999; Michor et al. 1999; Freudenberger et al. 2001a). As has been pointed
out by Levin et al. (1984) and Gupta (1998) the depression of superconductivity in
antiferromagnetic superconductors by non-magnetic impurities may be the reason why not
many antiferromagnetic superconductors with T c < TN are known. In principle there is no
reason as to why many more such materials should not exist. However, in most such cases
T c may already have been suppressed beyond observation by non-magnetic impurities that
are always present to some degree.
A very strong decrease of T c is observed if the Ho in HoNjzB2C is diluted by La
(see fig. 64). This observation is not yet well understood and various mechanisms are in
discussion. On the one hand, La has a much larger ionic radius than Ho. Hence large
distortions will occur around the La impurities. Furthermore, below 6 K HoNi2B2C is an
~ 16 "
::.:: t- ..',
~ 14 ......" ..
-,."
~ 12 "·~""".Jlo- Y
~ "''''', ........
E 10 Ho-Lu -, ....
e~ 8
"';:,.
,------
~ 6
,g 4
Ho-La
'~ 2
j
,...e O~-------,./
o 1.0 2.0 3.0 4.0

Effective de Gennes factor DO
Fig. 64. The different influence of the non-magnetic R elements Y. Lu and La on the superconducting transition
temperature T c in the series HoxRI_xNi2B2C (after Freudenberger et al, 1mb).
antiferromagnetic superconductor. Therefore in a certain concentration range the La ions

may act as non-magnetic impurities in an antiferromagnetic superconductor (see the kink
in the Ho-La curve in fig. 64). The third reason which has to be taken into account for the
decrease of T c in (Ho,La)Ni2B2C is the tendency of RNhB2C compounds to have small
or zero values of T c if the ionic radius or the lattice constant a is relatively large (Lai et al.
1995), as shown in fig. 9. Superconductivity is absent in LaNi2B2C because the electronic
structure of that compound remarkably deviates from that in YNi2B2C and LuNhB2C (see
subsection 3.1).
7. Conclusions
The development in the research on borocarbide superconductors is remarkable for just a

several years past from their discovery till the end of 200 I. In the following we will select
some ideas and conclusions from Lynn et al. (200 I).
The rapid progress in the study of borocarbides is closely connected with the availability
of high quality polycrystalline samples over a wide range of compositions as well as single
crystals early in the development of the field. The main trends of the superconducting
properties and ordering of the rare-earth's magnetic moments have been elucidated. One
of the most interesting aspects of borocarbides is the possibility to observe coexistence
and competition between superconductivity and magnetic order. Most of the zero-field
magnetic structures have been obtained, but a number of key questions remains to
be clarified. A variety of both commensurate and incommensurate magnetic structures
was observed. To explain these structures theoretically a detailed understanding of the
role of superexchange versus indirect exchange, combined with single-ion crystal field
and hybridization effects, is needed. Inelastic neutron scattering experiments giving the
form of magnetic excitation spectra can provide a detailed picture of these interactions.
Another significant aspect to be investigated is the coupling of the rare earth ions to
the conduction electrons. It would be interesting to know what is the extent of the Ni
d-electron polarization in these materials. Additional experimental and theoretical efforts
are necessary to understand magnetic phase diagrams of these compounds. The recently
found coupling of the magnetic and crystallographic structures through magnetoelastic
interaction constitutes an additional complication for this study. Superconducting and
electronic properties of borocarbides exhibit rich and interesting behaviour. The band
structures have been investigated in some detail for most of the materials, and the Fermi
surface features have been investigated for a few systems. More work will be needed to
fully elucidate the electronic behaviour. The superconductivity is thought to be phonon
mediated. A direct manifestation of the electron-phonon coupling is observed in the
remarkable boron isotope effect and in softening of the phonon spectrum at the nesting
wave vector along the a axis, which is no doubt related to some of the observed magnetic
structures. The relation of the corresponding a-axis modulated incommensurate magnetic
structure to the superconductivity in HoNjzB2C still needs to be resolved. This a-axis
magnetic structure itself remains to be experimentally determined in HoNizBzC.
Although most of the results on superconducting properties of borocarbides can be
interpreted in the framework of the s-wave model, a d-wave approach was also proposed
to explain some features. A direct determination of the symmetry of the superconducting
order parameter, in terms of the k dependence of the superconducting gap, using electronic
phase-sensitive techniques needs to be carried out. Also the influence of disorder on
superconducting parameters should be studied in more detail. Particularly interesting are
the dynamics and the structure of the vortex lattice, and the structure of the vortices
themselves, particularly when rare earth magnetic moments are present and even are
ordered. The absence of superconductivity for light rare earths based borocarbides has been
explored to some extent but the reasons for this are not completely clear so far. Although
YbNizB2C is neither superconducting nor magnetically ordered, it reveals interesting
properties at low temperatures where the formation of a heavy fermion state was observed.
Some indications of an anomalous behaviour of PrNi2B2C were found, similar in some
respects to that observed for YbNi2BzC. More work is necessary to understand these
anomalies. The investigation of pseudoquaternary compounds with different rare earths on
the R site in RNjzBzC revealed much insight into the pair breaking mechanisms in these
materials, such as pairbreaking by magnetic impurities in nonmagnetic superconductors or
by nonmagnetic impurities in antiferromagnetic superconductors, the modification of both
effects by crystal fields, as well as the influence of chemical pressure or disorder caused
by the inhomogeneous occupation of the R site. The crystal chemistry of these systems is
quite complicated and not fully understood, and more work in this area would be profitable,
particularly in searching for new materials in this class. A fundamental problem, which
needs more exploration, is the interaction and possible coexistence of superconductivity
and weak ferromagnetism discussed for ErNi2BzC. One of the important questions related
to this problem is the possibility of the formation of a spontaneous vortex phase.
The problem of coexistence of superconductivity and weak ferromagnetism in boro-
carbides is closely related with the same issue for ruthenocuprates with typical composi-
tions RuSrzGdCuzOs or RuSrz(Gd,CehCuzOIO, for which magnetic ordering tempera-
tures were reported being much higher than T e . These and various other very interesting
superconductors have been discovered after the superconducting quaternary borocarbides,
as e.g. MgBz with Teas high as 40 K, chemically or by electrostatic means hole doped
C60 with T e up to 117 K, the itinerant weak ferromagnet ZrZnz, the ferromagnet UGez and
hexagonal (nonferromagnetic) Fe (both under high pressure). Quaternary borocarbides as

well as the other unconventional superconductors mentioned above are fascinating mate-
rials for which an intriguing interplay between superconductivity and magnetism is ob-
served. There is no doubt that further investigation of such systems will give new insight
in the fundamental physics of these two macroscopic quantum cooperative phenomena.
Acknowledgements
In writing this article the authors had close cooperation with J. Freudenberger, A. Kreyssig,
M. Loewenhaupt, H. Rosner, L. Schultz and S. Shulga. The authors also would like
to acknowledge many stimulating discussions with G. Behr, H. Bitterlich, H.E Braun,
T. Cichorek, K. Dorr, Z. Drzazga, D. Eckert, J. Eckert, H. Eschrig, J. Fink, P. Gegenwart,
A. Gladun, A. GUmbel, K. Hase, A. Handstein, B. Holzapfel, D. Lipp, W. LOser,
A.I. Morosov, K. Nenkov, I. Opahle, C. Ritter, C. Sierks, K. Winzer, S. Wimbush and
M. Wolf. This report encloses many results and insights from discussions with the
participants of the workshop on borocarbides, supported by NATO, held in June 2000 in
Dresden. This work has been supported by DFG (SFB463 and MUlOI5/4-2) and RFBR
(01-02-04002).
References
Abrikosov, A.A .. 1957. Zh. Eksp. Teor. Fiz. 32, 1442 Anderson. P.w.. 1959. J. Phys. Chern. Solids 11. 26.
(eng!. transl .• 1957. Sov. Phys. JETP 5, 1174). Anderson. p.w.• and H. Suhl, 1959, Phys. Rev. 116.
Abrikosov, A.A .. 2001. J. Phys.: Condens. Matter 13. 898.
L943. Andreone, A.• M. Iavarone. R. Vaglio, P. Manini and
Abrikosov, A.A .• and L.P. Gor'kov, 1961. Sov. Phys. E. Cogliati, 1996. App!. Phys. Lett. 69.118.
JETP 12. 1243. Andreone, A.. C. Aruta, F. Fontana. M. Iavarone.
Aharony, A.• R.I. Birgeneau, A. Coniglio, M.A. Kast- M.L. Russo. R. Vaglio. C.w. Grabtree and
ner and H.E. Stanley. 1988. Phys. Rev. Lett. 60, Y. DeWilde. 1998. in: Studies of High Temperature
1330. Superconductors. vol. 26. ed. A.V. Narlikar (Nova
Allen. P.B.• 1991. in: Encyclopedia of Physics. eds Science Publ .• New York) p. 79.
R.G. Lerner and G.L. Trigg (VCH Publishers, New Andreone, A., A. Cassinese, L. Gianni. M. Iavarone.
York) p. 1198. F. Palomba and R. Vaglio. 2001. Phys. Rev. B 64.
Alieno. E.• Z. Hossain. C. Godart. R. Nagarajan and 100505.
L.C. Gupta. 1995a. Phys. Rev. B 52. 7428. Ann. J.M .• and W.E. Pickett. 2001. Phys. Rev. Lett. 86.
Alieno. E.. U. Neumeier. 1.0. Thompson. P.C. Can- 4366.
field and B.K. Cho. 1995b. Physica C 242. 169. Aoki D.. A. Huxley. E. Ressouche, D. Braithwaite.
Allene, E.• P. Berger. E. Leroy and C. Godart. 2001. 1. Flouquet, J.-P. Brison, E. Lhotel and C. Paulsen.
in: Rare Earth Transition Metal Borocarbides (Ni- 2001. Nature 413. 613.
trides): Superconducting. Magnetic and Nonnal Arisawa, S.. T. Hatano, K. Hirata. T. Mochiku,
State Properties. eds K.-H. Muller and V.N. Narozh- H. Kitaguchi, H. Fujii, H. Kumakura, K. Kadowaki,
nyi (Kluwer Acad. Publ., Dordrecht) p. 265. K. Nakamura and K. Togano, 1994. Appl. Phys.
Allenspach, P.• and U. Gasser. 2000. 1. Alloys and Lett. 65. 1299.
Compo 311. I. Ashcroft. N.W.• 1968. Phys. Rev. Len. 21, 1748.
Amici. A.• and P. Thalmeier, 1998. Phys. Rev. B 57. Baggio-Saitovitch, E.M .• D.R. Sanchez and H. Mick-
10684. litz, 2001. in: Rare Earth Transition Metal Boro-
Amici. A.• P. Thalmeier and P. Fulde, 2000. Phys. Rev. carbides (Nitrides): Supercondueting, Magnetic and
Lett. 84. 1800. Normal State Properties. eds K.-H. Mililer and
V.N. Narozhnyi (Kluwer Acad. Publ., Dordrecht) Bonville. P.. J.A. Hodges. Z. Hossain, R. Nagarajan,
p.51. S.K. Dhar, L.e. Gupta. E. Alieno and C. Godart,
Baltensperger, W.• and S. Strassler, 1963. Phys. Kon- 1999, Eur. Phys. J. B 11. 377.
dens. Materie 1. 20. Boothroyd. A.T.. 2000, J. Alloys & Compo 303-304.
Barash. Y.S.• A.A. Svidzinskii and Y.P. Mineev, 1997. 489.
IETP Lett. 65. 638. Boothroyd. A.T.. J.P. Barratt, S.J.S. Lister.
Bardeen, 1., L.N. Cooper and 1.R. Schrieffer, 1957a, A.R. Wildes. P.C. Canfield and R.I. Bewley.
Phys. Rev. 106, 162. 2001, in: Rare Earth Transition Metal BOT<lCar-
Bardeen, 1., L.N. Cooper and J.R. Schrieffer, 1957b. bides (Nitrides): Superconducting, Magnetic and
Phys. Rev. 108. 1175. Normal State Properties, eds K.-H. Miiller and
Bardeen, 1.. 1992. in: Concise Encyclopedia of Mag- V.N. Narozhnyi (Kluwer Acad. Publ., Dordrecht)
netic & Superconducting Materials, ed. J. Evets p.163.
(Pergamon Press. Oxford) p. 554. Bourdarot, E. J.W Lynn, E. Baggio-Saitivitch,
Bauer. 1.. and O. Bars. 1980, Acta Cryst. B 36. 1540. Q. Huang, D.R. Sanchez and S. Skanthakumar,
Bauer, E.D., R.P. Dickey, V.Z. Zapf and M.B. Maple. 2001, Phys. Rev. B 64, 104410.
2001. J. Phys.: Condo Matt. 13, L759. Brabers, J.H.V.J .• K. Bakker. H. Nakotte, ER. de Boer,
Bauernfeind, L.. W Widder and H.E Braun. 1995, S.K.J. Lenczowski and K.H.J. Buschow, 1993. J.
Physica C 254, 151. Alloys & Compo 199. LI.
Bednorz, J.G .• and K.A. Muller, 1986. Z. Phys. B 64, Brandt, E.H .• 1995, Rep. Prog. Phys. 58, 1465.
189. Braun. H.E, 2001. in: Rare Earth Transition Metal
Behr, G., W. LOser, G. Graw, H. Bitterlich, 1. Freuden- Borocarbides (Nitrides): Superconducting, Mag-
berger. J. Fink and L. Schultz. I 999a. J. Cryst. netic and Normal State Properties, eds K.-H. Milller
Growth 19&'199,642. and V.N. Narozhnyi (Kluwer Acad. Publ., Dor-
Behr, G., W. Loser, G. Graw, K. Nenkov, U. Kramer. drecht) p. 233.
A. Belger and B. Wehner, 1999b. J. Mater. Res. 14, Brison. 1.P.. N. Keller, A. Vemiere, P. Lejay,
16. L. Schmidt. A. Buzdin, J. Flouquet, S.R. Julian and
Belaschenko, K.D.. M. van Schilfgaarde and G.G. Lonzarich, 1995. Physica C 250. 128.
Y.P. Antropov, 2001, Phys. Rev. B 64, 092503.
Buchgeister, M., G. Fuchs. J. Klosowski, U. Wiesner
Bernhard, c.. J.L. Tallon. Ch. Niedermayer, Th. Bla-
and J. Zawadski, 1995, Physica C 255, 19.
sius. A. Golnik, E. Briicher, R.K. Kremer,
Buchgeister, M.. and W. Pitschke, 1996. Physica C 264.
D.R. Noakes, C.E. Stronach and E.A. Ansaldo,
250.
1999. Phys. Rev. B 59, 14099.
Bud'ko, S.L., B. Giordanengo, A. Sulpice, M.B. Fontes
Beyermann, WP., A.H. Lacerda and P.e. Canfield.
and E.M. Baggio-Saitovitch, 1995a, Sol. State
1999, Physica B 259-261, 584.
Commun.94,119.
Bitterlich, H.• W. LOser. G. Behr, S.-L. Drechsler,
Bud'ko, S.L., M.B. Fontes, D. Aliaga-Guerra and
K. Nenkov, G. Fuchs, K.-H. Milller and L. Schultz.
E.M. Baggio-Saitovitch, I 995b. Phys. Rev. B 52,
2001, in: Rare Earth Transition Metal Borocarbides
305.
(Nitrides): Superconducting, Magnetic and Normal
State Properties. eds K.-H. Miiller and Y.N. Narozh- Bud·ko. S.L., M. Elmassalami, M.B. Fontes,
nyi (Kluwer Acad. Publ .. Dordrecht) p. 281. J. Mondragon, W. Vanoni, B. Giordanengo
Bitterlich, H.• W LOser. G. Behr, S.-L. Drechsler. and E.M. Baggio-Saitovitch, 1995c, Physica C 243,
K. Nenkov, G. Fuchs. K.-H. Miiller and L. Schultz. 183.
2002. Phys. Rev. B 65 (in press). Bud'ko, S.L.. S.L. Demishev, M.B. Fontes and
Blount. E.I .• and e.M. Varma. 1979. Phys. Rev. Lett. E.M. Baggio-Saitovitch, 1996. J. Phys.: Condens.
42.1079. Matt. 8. L159.
Boaknin, E., R.W. Hill. e. Lupien, L. Taillefer and Bud'ko, S.L .• P.e. Canfield, A. Yatskar and WP. Bey-
P.C. Canfield, 2000. Physica C 341-348, 1845. ermann, 1997. Physica B 230-232. 859.
Boaknin, E., R.W. Hill, C. Proust. C. Lupien. L. Taille- Bud'ko, S.L.. and P.C. Canfield. 2oooa. Phys. Rev. B
fer and P.C. Canfield. 2001. Phys. Rev. Lett. 87. 61,14932.
237001. Bud·ko. S.L.. and P.C. Canfield, zoooe, Physica B 280,
Bonville. P., J.A. Hodges, e. Vaast, E. Alieno. e. Go- 356.
dart, L.e. Gupta, Z. Hossain and R. Nagarajan, Bulaevskii, L.N.. A.I. Buzdin, ML Kulic and
1996, Physica B 223-224. 72. S.Y. Panjukov, 1985. Adv. Phys. 34. 175.
Buschow, K.H.J., 1980, in: Ferromagnetic Materials, Normal State Properties, eds K.-H. MUller and
vol. I, ed. E.P. Wohlfarth (North-Holland, Amster- V.N. Narozhnyi (Kluwer Acad. Publ., Dordrecht)
dam) p. 297. p.21.
Campbell, A.J., D. McK. Paul and G.J. McIntyre, Chang, L.J., C.V. Tomy, D. McK. Paul, N.H. Andersen
zoo». Phys. Rev. B 61, 5872. and M. Yethiraj, 19%a, I. Phys.: Condens. Matter
Campbell, A.J., D. McK. Paul and G.J. McIntyre, 8,2119.
2ooob, Solid State Commun. 115,213. Chang, L.I., C.V. Tomy, D. McK. Paul and C. Ritter,
Canfield, P.C., BK Cho, D.C. Johnston, OK Finne- 19%b, Phys. Rev. B 54, 9031.
more and M.F. Hundley, 1994, Physica C 230, 397. Cheon, K.O., I.R. Fisher, V.G. Kogan, P.c. Canfield,
Canfield, P.C., B.K. Cho and K.W. Dennis, 1995, Phys- P. Miranovic and P.L. Gammel, 1998, Phys. Rev. B
ica B 215, 337. 58,6463.
Canfield, P.C., S.L. Bud'ko and B.K. Cho, 1996, Phys-
Cheon, K.O., I.R. Fisher and P.C. Canfield, 1999, Phys-
ica C 262, 249.
ica C 312, 35.
Canfield, ac., and S.L. Bud'ko, 1997, J. Alloys &
Chinchure, A.D., R. Nagarajan and L.C. Gupta, 1999,
Comp.262-263,169.
Solid State Commun. 110,691.
Canfield, P.C., S.L. Bud'ko, B.K. Cho, A. Lacerda,
Cho, B.K., P.C. Canfield and D.C. Johnston, I 995a,
D. Farrell, E. Johnston-Halperin, VA Kalatsky and
Phys. Rev B 52, R3844.
V.L. Pokrovsky, 1997a, Phys. Rev. B 55, 970.
Canfield, P.C., S.L. Bud'ko, B.K. Cho, W.P. Beyer- Cho, B.K., M. Xu, P.c. Canfield, L.L. Miller and
mann and A. Yatskar, 1997b, J. Alloys & Compo D.C. Johnston, 1995b, Phys. Rev. B 52, 3676.
250,5%. Cho, B.K., P.C. Canfield, L.L. Miller, D.C. Johnston,
Canfield, P.C., P.L. Gammel and 0.1. Bishop, 1998, WP. Beyermann and A. Yatskar, 1995c, Phys. Rev.
Physics Today 51 (10),40. B 52, 3684.
Canfield, P.C., and S.L. Bud'ko, 2001, in: Rare Earth Cho, B.K., P.C. Canfield and D.C. Johnston, 1996a,
Transition Metal Borocarbides (Nitrides): Super- Phys. Rev. B 53, 8499.
conducting, Magnetic and Normal State Proper- Cho, B.K., B.N. Harmon, D.C. Johnston and P.C. Can-
ties, eds K.-H. MUlier and V.N. Narozhnyi (K1uwer field, 19%b, Phys. Rev. B 53, 2217.
Acad. Publ., Dordrecht) p. 33. Cho, B.K., P.C. Canfield and D.C. Johnston, 19%c,
Cappannini, O.M., C.O. Rodrigues and N.E. Chris- Phys. Rev. Lett. 77. 163.
tensen, 1998, Physica C 306, 101. Cho, B.K., 1998, Physica C 298, 305.
Carbone, J.P., 1990, Rev. Mod. Phys. 62, 1027. Cho, B.K., H.B. Kim and S.-I. Lee, 2001, Phys. Rev. B
Carter, SA, B. Batlogg, R.I. Cava, U. Krajewski and 63,144528.
WF. Peck, Jr., 1995, Phys. Rev. B 51, 12829. Choi, C.K., E.S. Choi, J.H. Lee, Y.W Park and
Cava, R.I., H. Takagi, B. Batlogg, HW. Zandber- Y.S. Song, 1998, Phys. Rev. B 57, 126.
gen, J.J. Krajewski. WF. Peck, Jr., R.B. van Dover, Choi, I.-H., H. Doh, E.-M. Choi. H.-I. Kim, S.-I. Lee,
R.J. Felder, T. Siegrist, K. Mizuhashi, J.O. Lee,
T. Yamamoto, T. Kawae and K. Takeda, 2oola, J.
H. Eisaki. SA Carter and S. Uchida, 1994a, Nature Phys. Soc. Jap. 70, 3037.
367,146.
Choi, S.-M., J.W. Lynn, D. Lopez. P.L. Gammel,
Cava, R.I., H. Takagi, H.W Zandbergen, U. Kra-
P.C. Canfield and S.L. Bud'ko, 2oolb, Phys. Rev.
jewski, WF. Peck, Jr., T. Siegrist, B. Batlogg,
Lett. 87, 107001.
R.B. van Dover, R.I. Felder, K. Mizuhashi, J.O. Lee,
Christianson, A.D., S.L. Bud'ko, G.M. Schmiedeshoff,
H. Eisaki and S. Uchida, 1994b, Nature 367, 252.
W.P. Beyermann, P.C. Canfield, G.S. Boebinger and
Cava, R.I., H.W. Zandbergen, B. Batlogg, H. Eisaki,
A.H. Lacerda, 2001, Physica B ~295, 225.
H. Takagi, U. Krajewski, W.F. Peck, Jr., E.M. Gy-
orgy and S. Uchida, 1994c, Nature 372, 245. Chu, R.K., W.K. Chu, Q. Chen. Z.H. Zhang and J.H.
Cava, R.I., B. Batlogg, T. Siegrist, 1.1. Krajewski, Miller. Jr., 2000. J. Phys.: Condens. Matter 12, 275.
W.E Peck, Jr., S. Carter, R.I. Felder, H. Takagi and Cimberle, M.R .• C. Ferdeghini, P. Guasconi, D. Mane,
R.B. van Dover, 1994d, Phys. Rev. B 49, 12384. M. Putti, A.S. Siri, F. Canepa, P. Manfrinetti and
Cava, R.I., B. Batlogg, U. Krajewski, WF. Peck, Jr., A. Palenzona, 1997, Physica C 282-287. 573.
T. Siegrist, R.M. Fleming, S. Carter, H. Takagi, Coehoorn, R., 1994, Physica C 228, 331.
R.I. Felder, R.B. van Dover and L.W. Rupp, Jr., Cywinski, R., Z.P. Han, R. Bewley, R. Cubitt,
1994e, Physica C 226, 140. M.T. Wylie, E.M. Forgan. S.L. Lee. M. Warden and
Cava, R.I., 2001, in: Rare Earth Transition Metal Bora- S.H. Kilcoyne, 1994. Physica C 233.273.
carbides (Nitrides): Superconducting, Magnetic and Dagono, E., 1999. Rep. Prog. Phys. 62, 1525.
Davidov, D.• K. Baberschke, J.A. Mydosh and State Properties. eds K.-H. Muller and Y.N. Narozh-
G.I. Nieuwenhuys, 1977.1. Phys. F: Metal Phys. 7. nyi (Kluwer Acad. Publ., Dordrecht) p. 347.
lA7. Dezaneti, L.M .• Y.v. Xue, Y.v. Sun. K. Ross and
de Gennes, P.-G.• 1958. Compt. Rend. Acad. Sci. 247. C.W. Chu, 2000. Physica C 334.123.
1836. Dhar, S.K .. R. Nagarajan, Z. Hossain. E. Tominez,
Dertinger, A.• R.E. Dinnebier, A. Kreyssig, P.W Step- C. Godart. L.C. Gupta and R. Vijayaraghavan. 1996.
hens. S. Pagola, M. Loewenhaupt, S. van Smaalen Sol, State Commun. 98.985.
and H.F. Braun. 2001. Phys. Rev. B 63. 184518. Divis. M.• K. Schwarz. P. Blaha, G. Hilscher. M. Mi-
Dettinger, A.• 2001. Supraleitung und Magnetismus chor and S. Khmelevskyi, 2000. Phys. Rev. B 62.
in Holmium-Nickel-Borkarbid von Strukturtyp 6774.
LuNi2B2C. Thesis. Universitat Bayreuth (Shaker Divis. M.• 2001. unpublished results.
Verlag. Aachen). Drechsler. S.-L.. S.V. Shulga. K.-H. Muller. G. Fuchs.
Dervenagas, P.• 1. Zarestky. C. Stassis, A.1. Goldman. J. Freudenberger, G. Behr, H. Eschrig, L. Schultz.
P.C. Canfield and B.K. Cho, 1995a, Physica B 212. M.S. Golden. H. von Lips. 1. Fink. V.N. Narozh-
I. nyi, H. Rosner. P. Zahn. A. Gladun. D. Lipp,
Dervenagas, P.• M. Bullock. J. Zarestky. P.C. Canfield. A. Kreyssig, M. Loewenhaupt, K. Koepernik,
B.K. Cho. B. Harmon. A.I. Goldman and C. Stassis, K. Winzer and K. Krug, 1999. Physica C 317-318.
1995b. Phys. Rev. B 52. R9839. 117.
Dervenagas, P.• J. Zarestky, C. Stassis, A.I. Goldman. Drechsler. S.-L.. H. Rosner. S.V. Shulga, H. Es-
chrig, J. Freudenberger, G. Fuchs. K. Nenkov,
P.C. Canfield and B.K. Cbo, 1996. Phys. Rev. B 53.
K.-H. Muller. D. Lipp, A. Gladun, A. Kreyssig,
8506.
K. Koepernik, P. Gegenwart and T. Cichorek, 2000.
Detlefs. C.• A.I. Goldman. C. Stassis, P.c. Canfield.
Physica C 341-348.749.
B.K. Cho, J.P. Hill and D. Gibbs. 1996. Phys. Rev.
Drechsler. S.-L.. H. Rosner. S. Shulga, 1. Opahle
B 53. 6355.
and H. Eschrig, 2oola, in: Rare Earth Transition
Detlefs, c., A.H.M.Z. Islam. T. Gu. A.1. Goldman.
Metal Borocarbides (Nitrides): Superconducting,
C. Stassis, P.C. Canfield. J.P. Hill and T. Vogt,
Magnetic and Normal State Properties. eds K.-H.
1997a. Phys. Rev. B 56. 7843.
Muller and V.N. Narozhnyi (Kluwer Acad. Publ.,
Detlefs, C .• A.H.M.Z. Islam. A.I. Goldman. C. Stassis,
Dordrechl) p. 403.
P.C. Canfield. J.P. Hill and D. Gibbs. 1997b. Phys.
Drechsler. S.-L .• H. Rosner. S.V. Shulga, I. Opahle,
Rev. B 55. R680.
H. Eschrig, J. Freudenberger, G. Fuchs. K. Nenkov,
Detlefs. c., D.L. Abernathy. G. GrUbel and P.C. Can-
K.-H. Muller. H. Bitterlich, W. LOser. G. Behr,
field. 1999. Europhys. Lett. 47. 352. D. Lipp and A. Gladun, 200lb. Physica C 364-365.
Detlefs, c.. F. Bourdarot, P. Bourlett, P. Dervenagas, 31.
S.L. Bud'ko and P.C. Canfield. 2000. Phys. Rev. B Dugdale. S.B .• M.A. Alam.T, Wilkinson. R.I. Hughes.
61.14916. I.R. Fisher. P.C. Canfield. T. Jarlborg and G. Santi.
Detlefs, C.• F. Bourdarot, P. Bourlett, S.L. Bud'ko 1999. Phys. Rev Lett. 83. 4824.
and P.C. Canfield. 2001. in: Rare Earth Transi- Du Mar. A.C.. K.D.D. Rathnayaka, D.G. Naugle and
tion Metal Borocarbides (Nitrides): Superconduct- P.C. Canfield. 1998. Int. 1. Mod. Phys. B 12.3264.
ing, Magnetic and Normal State Properties. eds Dunlap. B.D .• M. Slaski, D.G. Hinks, L. Soderholm.
K.-H. Muller and V.N. Narozhnyi (Kluwer Acad. M. Beno, K. Zhang. C. Segre, G.W. Crabtree.
Publ., Dordrecht) p. 155. WK. Kwok, S.K. Malik. K.I. Schuller. 1.D. Jorgen-
De Wilde. Y.• M. Iavarone. U. Welp. Y. Metlushko, son and Z. Sungaila, 1987. J. Magn. Magn. Mater.
A.E. Koshelev, 1. Aranson, G.W Crabtree and 68. Ll39.
P.C. Canfield. 1997. Phys. Rev. Lett. 78.4273. Dunlap. B.D .• M. Slaski, Z. Sungaila, D.G. Hinks,
Dewhurst. C.D .• R.A. Doyle. E. Zeldov and D.McK. K. Zhang. C. Segre, S.K. Malik and E.E. Alp. 1988.
Paul. 1999. Phys. Rev. Lett. 82. 827. Phys. Rev. B 37. 592.
Dewhurst. C.D .• S.S. James. R.A. Doyle. V. Paltiel, Dzyaloshinsky, I.E .• 1957. Zh. Eksp. Teor. Fiz. 33.
H. Shtrikman, E. Zeldov and D.McK. Paul. zoo», 1454 (engl. transl., 1958. Sov. Phys. JETP6. 1120).
Phys. Rev. B 63. 06050I(R). Eisaki, H.. H. Takagi. R.I. Cava. B. Batlogg, 1.1. Kra-
Dewhurst. C.D .• S.S. James. N. Saha, R. Surdeanu, jewski. WF. Peck. Jr.• K. Mizuhashi, 1.0. Lee and
Y. Paltiel, E. Zeldov and D.McK. Paul. 200 lb. S. Uchida. 1994. Phys. Rev. B SO. 647.
in: Rare Earth Transition Metal Borocarbides (Ni- Ekino, T.• H. Fujii. M. Kosugi, Y. Zenitani and J. Akim-
trides): Superconducting. Magnetic and Normal itsu, 1996. Phys. Rev. B 53. 5640.
El-Hagary, M., H. Michor, e. Jambrich, R. Hauser, K.-H. MilIler and V.N. Narozhnyi (Ktuwer Acad.
M. Galli, E. Bauer and G. Hilscher, 1998,1. Magn. Publ., Dordrecht) p. 333.
Magn. Mater. 177-181,551. Eskildsen, M.R., A.B. Abrahamsen, D. Lopez,
EI-Hagary, M., H. Michor and G. Hilscher, 2000a, P.L. Gammel, DJ. Bishop, N.H. Andersen,
Physica B 284-288, 1489. K. Mortensen and P.C. Canfield, 200lb, Phys. Rev.
EI-Hagary, M., H. Michor and G. Hilscher, 2000b, Len. 86, 320.
Phys. Rev. B 61, 11695. Eskildsen, M.R., A.B. Abrahamsen, V.G. Kogan,
Eliashberg, G.M., 1960, Zh. Eksp. Teor. Fiz. 38, 966 P.L. Gammel, K. Mortensen, N.H. Andersen and
(engl. transl., 1960, Sov, Phys. JETP 11,696). P.C. Canfield. 200lc. Pbys. Rev. Len. 86,5148.
EI Massalami, M., E. Baggio-Saitovitch and A. Sul- Eversmann, K.. A. Handstein, G. Fuchs, L. Cao and
pice, 1995a, J. AIIoys & Compo 228, 49. K.-H. Muller, 1996, Physica C 266.27.
EI Massalami, M., B. Giordanengo, 1. Mondragon, Falcony, R., A. Duran and R. Escudero, 2001, Phys.
E.M. Baggio-Saitovitch, A. Takeuchi, 1. Voiron and Rev. B 65, 024505.
A. Sulpice, I995b, J. Phys.: Condens. Maner 7, Fay, D., and 1. Appel, 1980, Pbys. Rev. 22, 3173.
10015. Fehrenbacher, R., and T.M. Rice, 1993, Pbys. Rev. Lett.
EI Massalami, M., S.L. Bud'ko, B. Giordanengo and 70,3471.
E.M. Baggio-Saitovitch, 1995c, Physica C 244, 41. Feiner, I., 1984, Sol. State Commun. 52, 191.
EI Massalami, M., M.R. Amaral, Jr., L. Ghivelder, Feiner, I., C. Godart and E. Allene, 1997a, Physica C
lA. Castillo, GJ. Nieuwenhuys and C.E. Snel, 282-287, 1317.
1997, J. Magn. Magn. Mater. 172, 139. Feiner, I., D. Schmitt, B. Barbara, E. AIIeno and C. Go-
EI Massalami, M., R.E. Rapp and GJ. Nieuwenhuys, dart, 1997b, J. Solid State Chern. 133,5.
1998a, Physica C 304, 184. Feiner, L, 1998, in: Studies of High Temperature Su-
EI Massalami, M., M.S. da Costa, M.A. Novak and perconductors, vol. 26, ed. A.V. Narlikar (Nova Sci-
V. Barthem, I998b, J. Magn. Magn. Mater. 188, ence Publ., New York) p. 27.
379. Feiner, I., U. Azaf, S. Reich and Y.Tsabba, 1999, Phys-
Eremets, M.I., V.V. Struzhkin, H.-K. Mao and ica C 311, 163.
RJ. Hemley, 2001, Science 293, 272. Feiner, I., 2001, in: Rare Earth Transition Metal Bow-
Eskildsen, M.R., P.L. Gammel, B.P. Barber, A.P. Ra- carbides (Nitrides): Superconducting, Magnetic and
mirez, DJ. Bishop, N.H. Andersen, K. Mortensen, Normal State Properties, eds K.-H. MilIler and
C.A. BoIle, C.M. Lieber and P.e. Canfield, 1997a, V.N. Narozhnyi (Kluwer Acad. Publ., Dordrecht)
Phys. Rev. Len. 79, 487. p.197.
Eskildsen, M.R., P.L. Gammel, B.P. Barber, U. Yaron, Fernandez-Baca, J.A., and J.W. Lynn, 1981, J. Appl.
A.P. Ramirez, D.A. Huse, D.J. Bishop, e. BoIle, Phys. 52, 2183.
C.M. Lieber, S. Oxx, S. Sridhar, N.H. Andersen, Fertig, WA., D.C. Johnston, L.E. Delong, R.W. Mc-
K. Mortensen and P.C. Canfield, 1997b, Phys, Rev. Callum, M.B. Maple and B.T. Matthias, 1977, Phys.
Len. 78, 1968. Rev. Lett. 38, 987.
Eskildsen, M.R., K. Harada, P.L. Gammel, A.B. Abra- Fink, HJ., A.C. Thorsen, E. Parker, V.F. Zackay and
hamsen, N.H. Andersen, G. Ernst, A.P. Ramirez, L. Toth, 1965, Phys. Rev. 138, AI 170.
D.J. Bishop, K. Mortensen, D.G. Naugle, Fischer, 0., and M.B. Maple (eds), 1982, Supercon-
K.D.D. Rathnayaka and P.C. Canfield, 1998, ductivity in Ternary Compounds I, Structural, Elec-
Nature 393, 242. tronic and Lattice Properties (Springer, Berlin).
Eskildsen, M.R., K. Harada, P.L. Gammel, N.H. An- Fischer, 0., 1990, in: Ferromagnetic Materials, vol. 5,
dersen, G. Ernst, A.P. Ramirez, DJ. Bishop, eds K.HJ. Buschow and E.P. Wohlfarth (Elsevier,
K. Mortensen and P.e. Canfield, 1999, Physica B Amsterdam) p. 466.
259-261, 582. Fisher, I.R., 1.R. Cooper and RJ. Cava, 1995, Phys.
Eskildsen, M.R., lR. Fisher, P.L. Gammel, Rev. B 52,15086.
DJ. Bishop, N.H. Andersen, K. Mortensen Fisher, I.R., 1.R. Cooper and P.e. Canfield, 1997, Phys.
and P.e. Canfield, 2000, Physica C 332, 320. Rev. B 56, 10820.
Eskildsen, M.R.. K. Nergaard. A.B. Abrahamsen, Fontes, M.B., J.C. Trochez, B. Giordanengo,
N.H. Andersen, K. Mortensen, P.L. Gammel, S.L. Bud'ko, D.R. Sanchez, E.M. Baggio-Saitovitch
D. Lopez. DJ. Bishop, P. Vorderwisch, M. Meiss- and M.A. Continentino, 1999, Phys. Rev. B 60,
ner and P.C. Canfield, 2001 a, in: Rare Earth Transi- 6781.
tion Metal Borocarbides (Nitrides): Superconduct- Foulkes, I.F., and B.L. Gyorffy, 1997, Phys. Rev. B IS,
ing, Magnetic and Normal State Properties, eds 1395.
2% K.-H. MOLLER et al.
Freudenberger, J.• S.-L. Drechsler. G. Fuchs, A. Kreys- Gammel. P.L., D.J. Bishop, M.R. Eskildsen.
sig, K Nenkov, S.Y. Shulga, K.-H. Muller and K. Mortensen, N.H. Andersen, I.R. Fisher.
L. Schultz, 1998a. Physica C 306, I. KG. Cheon, P.e. Canfield and V.G. Kogan. 1999.
Freudenberger, J.• G. Fuchs. K. Nenkov, A. Handstein, Phys. Rev. Lett. 82, 4082.
M. Wolf. A. Kreyssig. K.-H. MUller. M. Loewen- Gammel, P.L.. B. Barber. D. Lopez, A.P. Ramirez,
haupt and L. Schultz, I 998b. J. Magn. Magn. Mater. D.J. Bishop, S.L. Bud'ko and P.C. Canfield, 2000.
187,309. Phys. Rev. Lett. 84, 2497.
Freudenberger, J.• V.N. Narozhnyi, Y.N. Kochetkov, Gammel. P.L., D. Lopez, DJ. Bishop, M.R. Eskildsen,
K.A. Nenkov, G. Fuchs, A. Handstein, K.-H. Muller A.B. Abrahamsen. N.H. Andersen. K. Mortensen
and L. Schultz. 1999a. J. Low Temp. Phys. 117, and P.e. Canfield, 2001. in: Rare Earth Transi-
1605. tion Metal Borocarbides (Nitrides): Superconduct-
Freudenberger, 1., A. Kreyssig, C. Ritter, K. Nenkov, ing, Magnetic and Normal State Properties, eds
S.-L. Drechsler, G. Fuchs, K.-H. Muller. K.-H. Muller and V.N. Narozhnyi (Kluwer Acad,
M. Loewenhaupt and L. Schultz, I 999b. Phys- Publ., Dordrecht) p. 313.
ica C 315.91. Gangopadhyay, A.K .• and 1.S. Schilling. 19%, Phys.
Freudenberger, J.• 2000. Paarbrechung in Seltenerd- Rev. B 54, 10107.
Ubergangsmetall-Borkarbiden. Thesis, TV Dres- Gao. L., X.D. Qiu, Y. Cao, R.L. Meng, Y.Y. Sun,
den. Y.Y. Xue and C.w. Chu. 1994, Phys. Rev. B SO,
Freudenberger, 1., G. Fuchs. K. Nenkov, S.-L. Drech- 9445.
Gasser, U.. P. Allenspach, F. Fauth. W. Henggeler,
sler. K.-H. Muller and L. Schultz. 2000, Physica C
J. Mesot, A. Furrer, S. Rosenkranz, P. Vorderwisch
339.195.
and M. Buchgeister, 1996, Z. Phys. BIOI, 345.
Freudenberger, J., G. Fuchs. K. Nenkov, S.-L. Drech-
Gasser, U.• P.Allenspach, J. Mesotand A. Furrer, 1997.
sler. K.-H. MUller. L. Schultz, A. Kreyssig and
Physica C 282-287, 1327.
M. Loewenhaupt, 200111. in: Rare Earth Transi-
Gasser, U.• P. Allenspach and A. Furrer, 1998a. unpub-
tion Metal Borocarbides (Nitrides): Superconduct-
lished.
ing, Magnetic and Normal State Properties. eds
Gasser, U.• P. Allenspach, A. Furrer and A.M. Mulders.
K.-H. Muller and V.N. Narozhnyi (Kluwer Acad.
I 998b. 1. Alloys & Compo 275-277. 587.
Publ., Dordrecht) p. 275.
Gasser, U., and P. Allenspach, 2001. in: Rare Earth
Freudenberger, 1., G. Fuchs, K.-H. MUller and
Transition Metal Borocarbides (Nitrides): Super-
L. Schultz, 200lb. Mater. Res. Bull. 36. 117.
conducting, Magnetic and Normal State Proper-
Fuchs. G., K.-H. Muller, J. Freudenberger, K. Nenkov,
ties. eds K.-H. Muller and V.N. Narozhnyi (Kluwer
S.-L. Drechsler. H. Rosner. S.V. Shulga, A. Gladun,
Acad. Publ., Dordrecht) p. 131.
D. Lipp, T. Cichorek and P. Gegenwart, 2001,
Gavaler, 1.R., M.A. Janocko and C.K. Jones, 1974,1.
in: Rare Earth Transition Metal Borocarbides (Ni-
Appl. Phys. 45. 3009.
trides): Superconducting, Magnetic and Normal Ghosh. P.K., and K.N. Shrivastava, 1998. Physica C
State Properties, eds K.-H. Milller and V.N. Narozh- 306,233.
nyi (Kluwer Acad. Publ .. Dordrecht) p. 243. Ghosh, G., A.D. Chinchure, R. Nagarajan, C. Godart
Fuchs. G.• S.-L. Drechsler. S.V. Shulga, A. Hand- and L.C. Gupta, 2001. Phys. Rev. B 63, 212505.
stein. V.N. Narozhnyi, K. Nenkov, K.-H. Muller and Ginzburg. V.L.. and L.D. Landau. 1950. Zh. Eksp. Teor.
H. Rosner. 2002, in: Studies of High Temperature Fiz. 20. 1064.
Superconductors. vol. 41, ed. A.V. Narlikar (Nova Ginzburg. Y.L., 1956, Zh. Eksp. Teor. Fiz. 31, 202
Science Publ., New York) p. 171 (in press). (eng!. transl., 1957, SOY. Phys. JETP4. 153).
Fulde, P., and I. Peschel. 1972, Adv. Phys. n, I. Ginzburg. Y.L., 1964. Phys. Lett. 13, 101.
Fulde, P., and 1. Keller. 1982, in: Superconductivity in Ginzburg, Y.L., 2000, Physics-Uspekhi, 43, 573.
Ternary Compounds, Superconductivity and Mag- Giorgi, A.L.. E.G. Szklarz, M.C. Krupka and
netism, eds M.B. Maple and 0. Fischer (Springer, N.H. Krikorian, 1969, J. Less-Common Met. 17.
Berlin) p. 249. 121.
Fulde, P., 1995. Electron Correlations in Molecules and Godart, C; L.e. Gupta. R. Nagarajan, S.K Dhar,
Solids (Springer, Berlin). H. Noel, M. Potel, e. Mazumdar, Z. Hossain,
Gabovich, A.M.. A.1. Voitenko, J.F. Annett and C. Levy-Clement. G. Schiffmacher, B.D. Padalia
M. Ausloos, 2001. Supercond. Sci. Technol. 14. RI. and R. Vijayaraghavan, 1995, Phys. Rev. B 51, 489.
Galffy. M.• and E. Zimgiebl, 1988. Solid State Com- Godart, C., E. Alieno, E. Torninez, L.C. Gupta,
mun. 68, 929. R. Nagarajan, Z. Hossain, J.W. Lynn. P. Bonville,
J.A. Hodges. J.P. Sanchez and I. Feiner. 1997. J. Sol. Hill. 1.P., B.1. Sternheb, D. Gibbs. C. Detlefs,
State Chern. 133. 169. A.I. Goldman. C. Stassis, P. Canfield and B.K. Cho,
Goldman. A.I.. e. Stassis, PC. Canfield, J. Zarestky, 1996, Phys. Rev. B 53, 3487.
P. Dervenagas, B.K. Cho. D.e. Johnston and Hillenbrand. B.• and M. Wilhelm. 1970. Phys. Leu. 31.
B. Sternlieb, 1994. Phys. Rev. B 50. 9668. A 448.
Goll, G.. M. Heinecke. A.G.M. Jansen. W. Joss. Hilscher. G., and H. Michor, 1999. in: Studies of
L. Nguyen. E. Steep. K. Winzer and P. Wyder. 1996. High Temperature Superconductors. vol. 28. ed.
Phys. Rev. B 53. 8871. A.V. Narlikar (Nova Science Publ., New York)
Gor'kov, L.P.• 1959. Zh. Eksp. Teor. Fiz. 36. 1918 p.241.
(engl. transl., 1959. Sov. Phys. JETP 9. 1364) and Hilscher. G., H. Michor and M. Divis, 2001, in: Rare
Zh. Eksp. Teor. Fiz. 37. 1407 (engl. transl., 1960. Earth Transition Metal Borocarbides (Nitrides): Su-
Sov, Phys. JETP 10. 998). perconducting. Magnetic and Normal State Proper-
Gor'kov, L.P.• and A.I. Rusinov, 1964. Zh. Eksp. Teor. ties. eds K.-H. Muller and V.N. Narozhnyi (Kluwer
Fiz.46. 1363 (engl. transl., 1964. Sov, Phys. JETP Acad. Publ., Dordrecht) p. 187.
19.922). Hodges. J.A., J.P. Sanchez and I. Feiner. 1997.1. Sol.
Grigereit, T.E.• J.W. Lynn. Q. Huang. A. Santoro. State Chern. 133. 169.
R.I. Cava. J.1. Krajewski and W.F. Peck. Jr.• 1994. Hoellwarth, C.C., P. Klavins and R.N. Shelton. 1996.
Phys.Rev.Leu.73.2756. Phys. Rev. B 53, 2579.
Gulden. Th .• R.W. Henn, O. Jepsen. R.K. Kremer. Hohenberg, P.e.. and N.R. Werthamer. 1967, Phys.
W. Schnelle. A. Simon and e. Felser, 1997. Phys. Rev. 153. 493.
Rev. B 56. 9021. Hossain. Z.• L.C. Gupta, Ch. Mazumdar, R. Nagarajan,
GUmbel. A.. 1. Eckert. A. Handstein and L. Schultz. S.K. Dhar, C. Godart. C. Levy-Clement, B.D. Pa-
2000. Physica B 284. 1107. dalia and R. Vijayaraghavan. 1994a, Sol. State
Gupta. L.C .. R. Nagarajan, Z. Hossain. Ch. Mazum- Commun. 92, 341.
dar. S.K. Dhar, C. Godart. C. Levy-Clement. Hossain, Z.. L.C. Gupta, R. Nagarajan, P. Raj,
B.D. Padalia and R. Vijayaraghavan, 1995, J. Magn. S.K. Dhar, e. Godart, P. Suryanarayana,
Magn. Mater. 140-144. 2053. S.N. Bagchi, V.G. Date, D.S.C. Purushotham
Gupta. t.c., 1998. Phil. Mag. B 77. 717. and R. Vijayaraghavan. 1994b, Europhys. Leu. 28.
Gurevich. A.• and V.G. Kogan. 2001. Phys. Rev. Leu. 55.
87. 177009. Hossain. Z., S.K. Dhar, R. Nagarajan, L.C. Gupta.
Gusev, A.I.. A.A. Rempel and V.N. Lipatnikov, 1996. C. Godart and R. Vijayaraghavan. 1995. IEEE
Phys. Stat. Sol. (b) 194.467. Trans. Mag. 31.4133.
Hase. K.• B. Holzapfel and L. Schultz, 1997, Chern. Hossain. Z.• R. Nagarajan, S.M. Pattalwar, S.K. Dhar,
Phys. 288. 28. L.C. Gupta and e. Godart. 1997, Physica B 230-
Hase, K.. S.C. Wimbush. D. Eckert. S. Paschen. 232,865.
B. Holzapfel and L. Schultz. 2001. in: Rare Earth Hossain. Z .• R. Nagarajan, S.K. Dhar and L.C. Gupta,
Transition Metal Borocarbides (Nitrides): Super- 1998. J. Magnet. Magnet. Mater. 184.235.
conducting, Magnetic and Normal State Proper- Hossain. Z., R. Nagarajan, S.K. Dhar and L.C. Gupta,
ties. eds K.-H. Muller and V.N. Narozhnyi (Kluwer 1999, Physica B 259--261. 606.
Acad. Publ., Dordrecht) p. 363. Hsu. Y.Y.. H.C. Chiang and H.C. Ku. 1998. J. Appl.
Havinga, E.E .• H. Damsma and J.M.Kanis. 1972. J. Phys. 83, 6789.
Less-Common Met. 27, 281. HUser. D.• M.1.F.M. Rewiersma, J.A. Mydosh and
He. T.•. Q. Huang. A.P. Ramirez. Y. Wang. K.A. Regan. GJ. Nieuwenhuys, 1983. Phys. Rev. Leu. 51. 1290.
N. Rogado, M.A. Hayward. M.K. Haas. J.L. Slusky, Hutchings. M.T.• 1964. in: Solid State Physics, vol, 16,
K. Inumara, H.W. Zandbergen, N.P. Ong and eds F. Seitz and D. Turnbull, p, 227.
R.I. Cava. 2001, Nature. 411. 54. Huxley, A., I. Sheikin, E. Ressouche, N. Kernavanois,
Hedo, M.• 1998. J. Phys. Soc. Jpn. 67. 272. D. Braithwaite. R. Calemczuk and 1. Flouquet,
Heinecke. M.• and K. Winzer. 1995. Z. Physik B 98, 2001. Phys. Rev. B 63. 144519.
147. Ishikawa, M. and 0. Fischer, 1977, Sol. State Com-
Henn, R.W.. C. Bernhard. R.K. Kremer, Th. Gulden. mun. 23. 37.
A. Simon, Th. Blasius and Ch. Niedermayer, 2000. Ishikawa, M.• 0. Fischer and J. Muller. 1982, in: Su-
Phys. Rev. B 62, 14469. perconductivity in Ternary Compounds U. Super-
Hennings. B.D .• K.D.D. Rathnayaka. D.G. Naugle and conductivity and Magnetism. eds M.B. Maple and
P.e. Canfield. 2001, Physica C ~365, 257. 0. Fischer (Springer. Berlin) p. 143.
Izawa, K, A. Shibata, Y. Matsuda, Y. Kato, H. Takeya, Kreyssig, A., M. Loewenhaupt, K.-H. MUlier,
K. Hirata, CJ. van der Beek and M. Konczykowski, G. Fuchs, A. Handstein and e. Ritter, 1997.
2001. Phys. Rev. Lett. 86, 1327. Physica B 234-236. 737.
Izawa, K. K. Kamata, Y. Nakajima, Y. Matsuda, Kreyssig, A., M. Loewenhaupt, J. Freudenberger,
T. Walanabe, M. Nohara, H. Takagi, P. Thalmeier K-H. MUlier and e. Ritter, 1999a, 1. Appl. Phys.
and K. Maki. 2002, cond-maIl0205178. 85,6058.
Jacobs. T., B.A. Willemsen. S. Sridhar. R. Nagarajan, Kreyssig, A.• J. Freudenberger, e. Sierks, M. Loewen-
L.e. Gupta. Z. Hossain. Ch. Mazumdar, P.C. Can- haupt, K-H. MUlier, A. Hoser and N. Stuesser,
field and B.K. Cho. 1995, Phys. Rev. B 52. 7022. 1999b. Physica B 259-261. 590.
Jaenike-Roessler, U., A. Belger, G. Zahn, B. Wehner, Kreyssig, A.• J. Freudenberger, e. Ritter. A. Hoser,
P. Paufter and H. Bitterlich, 1999, Physica C 314. M. Hofmann, G. Fuchs, K-H. MUlier and
43. M. Loewenhaupt, 2000. Physica B 276--278. 554.
James. S.S .• e.D. Dewhurst, S.B. Field. D. McK. Paul. Kreyssig, A., A. Schneidewind, M. Loewenhaupt,
Y. Paltiel. H. Shtrikman, E. Zeldov and A.M. Camp- C. Ritter. J. Freudenberger, G. Fuchs and
bell, 2001. Phys. Rev. B 51. 16436. K.-H. MUlier, 2001, in: Rare Earth Transition
Jensen, J., 2002. cond-mall0201 133. Metal Borocarbides (Nitrides): Superconduct-
Jiang. PJ., M.S. Lin. J.H. Shieh. Y.B. You, H.C. Ku and ing, Magnetic and Normal State Properties, eds
J.C. Ho, 1995. Phys. Rev. B 64, 092512. K-H. MUlier and Y.N. Narozhnyi (Kluwer Acad.
Johnston-Halperin, E., J. Fiedler, D.E. Farrell. M. Xu. Publ., Dordrecht) p. 181.
B.K Cho, P.C. Canfield. D.K Finnemore and Krupka. M.C., A.L. Giorgi, N.H. Krikorian and
D.C. Johnston, 1995, Phys. Rev. B 51, 12852. E.G.Szklarz, 1969. J. Less-Common Met. 19, 113.
Jones. T.E .• J.F. Kwak, E.P. Chok and P.M. Chaikin. Ku, H.C., and R.N. Shelton, 1980, Mat. Res. Bull. IS,
1978. Sol. State Commun. 27. 209. 1441.
Just. G., and P. Pautler. 1996, J. Alloys & Compo 232. Ku, H.C., e.e. Lai, Y.B. You, J.H. Shieh and
I. W Y. Guan, 1994. Phys. Rev. B SO, 351.
Kalatsky, VA, and V.L. Pokrovsky, 1998, Phys. Rev. KUbert, C., and P.l. Hirschfeld, 1998. Sol. State Com-
B 57, 5485. mun. 105, 459.
Kawano, H., H. Takeya, H. Yoshizawa and K. Kad- Lacerda, A.. A. Yatskar, G.M. Schrniedeshoff,
owaki, 1999. J. Phys. Chern. Sol. 60, 1053. WP. Beyermann and P.C. Canfield. 1996, Phil.
Kawano-Furukawa, H., 2001. in: Rare Earth Transi- Mag. B 74, 641.
tion Metal Borocarbides (Nitrides): Superconduct- Lai. c.c., M.S. Lin, Y.B. You and H.e. Ku, 1995, Phys.
ing, Magnetic and Normal State Properties. eds Rev. B 51. 420.
K.-H. MUlier and V.N. Narozhnyi (Kluwer Acad. Larkin, A.I.. and Yu.N. Ovchinnikov, 1979, J. Low
Publ., Dordrechl) p. 223. Temp. Phys. 34.409.
Keller. J., and P. Fulde, 1971. J. Low Temp. Phys. 4, Lawrie. D.D .• and J.P. Franck, 1995, Physica C 245.
289. 159.
Kim. H., C.-D. Hwang and J. Ihm, 1995, Phys. Rev. B Le, L.P., R.H. Heffner. J.D. Thompson. GJ. Nieuwen-
52,4592. huys, D.E. MacLaughlin, P.C. Canfield, B.K Cho,
xne, H., S. Ikeda. S. Takekawa, H. Abe and H. Ki- A. Amato. R. Feyerherm, EN. Gygax and
tazawa, 1997. Physica C 291,332. A. Schenck, 1997. Hyperfine Interact. 104.49.
Kogan, V.G., A. Guerevich, J.H. Cho, D.C. Johnston, Lee. J.I., T.S. Zhao. I.G. Kim, B.1. Min and SJ. Youn,
M. Xu. J.R. Thompson and A. Martynovich, 19%. 1994. Phys.Rev. B SO, 4030.
Phys. Rev. B 54. 12386. Lee, WH., S. Appl and R.N. Shelton, 1987,1. Low
Kogan, V.G.• P. Miranovic, Lj. Dobrosavljevic-Grujic, Temp. Phys. 68,147.
WE. Picket and D.K. Chisten, 1997a. Phys. Rev. Lee. WH., and R.N. Shelton, 1987, Phys. Rev. B 35,
Lett. 79, 741. 5369.
Kogan, V.G., M. Bullock, B. Harmon. P. Mira- Lee, WH.• HK Zeng, Y.D. Yao and Y.Y.Chen, 1996.
novic, Lj. Dobrosavljevic-Grujic, P.L. Gammel and Physica C 226. 138.
DJ. Bishop. 1997b, Phys. Rev. B 55, 8693. Lee, W.H., and H.K Zeng, 1997, Solid State Commun.
Kortus, J., 1.1. Mazin, K.D. Belashenko, Y.P. Antropov 101,323.
and L.L. Boyer, 2001, Phys. Rev. Lett. 86, 4656. Lee. KH., BJ. Mean. S.W Seo, KS. Han, D.H. Kim,
Kramers, H.A., 1930. Proc. Acad. Sci. 33 (Amster- M. Lee. S.1. Lee and B.K Cho, 1999, Int. J. Mod.
dam),959. Phys. B 13, 3682.
Lee. K.H.• BJ. Mean. G.S. Go. S.W. Seo, K.S. Han. and V.N. Narozhnyi (Kluwer Acad. Publ .• Dar-
D.H. Kim. M. Lee. B.K. Cho and S.I. Lee. 2000. drecht) p. 121.
Phys. Rev. B 62. 123. Lynn, lW., D.E. Moncton, L. Passel and W. Thomlin-
Levin. K.• M.I. Nass, C. Ro and G.S. Grest, 1984. son. 1980, Phys. Rev. B 21. 70.
in: Superconductivity in Magnetic and Exotic Ma- Lynn. J.w.. lA. Gotaas, R.W. Erwin. R.A. Ferell,
terials. eds T. Matsubara and A. Kotani (Springer. J.K. Bhattacharjee, R.N. Shelton and P. Klavins,
Berlin) p. 104. 1984. Phys. Rev. Lett. 52, 133.
Lifshits, I.M.• M.Ya. Azbel' and M.1. Kaganov, 1973. Lynn. lW., S. Skanthakumar, Q. Huang. S.K. Sinha,
Electron Theory of Metals (Consultants Bureau, Z. Hossain. L.C. Gupta, R. Nagarajan and C. Go-
New York). transl. of Russian original. 1971. Elek- dart. 1997. Phys. Rev. B 55, 6584.
tronnaya teoriya metallov (Nauka, Moskva). Lynn. ss«, P.C. Canfield. G. Hilscher. K.-H. MUlier
Lin. M.S .• J.H. Shieh, Y.B. You. Y.Y. Hsu, lW. Chen. and V.N. Narozhnyi, 2001, in: Rare Earth Transi-
S.H. Lin. Y.D. Yao, Y.Y.Chen, lC. Ho and H.C. Ku. tion Metal Borocarbides (Nitrides): Superconduct-
1995. Physica C 249. 403. ing, Magnetic and Nonnal State Properties. eds
Lejay, P.• B. Chevalier. J. Etourneau and P. Hagen- K.-H. MUlier and V.N. Narozhnyi (Kluwer Acad.
muller. 1981. Synth. Met. 4.139. Publ.. Dordrecht) p. 431.
Lipp, D.. M. Schneider, A. Gladun, S.-L. Drech- Machida, K.. K. Nokura and T. Matsubara. 1980a,
Phys. Rev. Lett. 44. 821.
sler. J. Freudenberger, G. Fuchs. K. Nenkov,
Machida, K., K. Nokura and T. Matsubara, I980b.
K.-H. MUlier. T. Cichorek and P. Gegenwart, 2001.
Phys. Rev. B 22. 2307.
in: Rare Earth Transition Metal Borocarbides (Ni-
Mailhiot, C.• J.B. Grant and A.K. McMahan. 1990.
trides): Superconducting, Magnetic and Nonnal
Phys. Rev. B 42. 9033.
State Properties. eds K.-H. MUlier and V.N. Narozh-
Makarova, T.L.. B. Sundqvist, R. Hohne, P. Esquinazi,
nyi (Kluwer Acad. Publ., Dordrecht) p. 89.
Y. Kopelevich, P. Scharff. A.A. Davydov, L.N. Ka-
Lipp, D.. M. Schneider. A. Gladun, S.-L. Drech-
shevarova and A.V. Rakhmanina, 2001. Nature 413.
sler. J. Freudenberger, G. Fuchs. K. Nenkov,
716.
K.-H. MUlier, T. Cichorek and P. Gegenwart, 2002,
Maki, K.. P. Thalmeier, and H. Won. 2002. cond-
Europhys. Lett. 58, 435.
mallO110591 v2.
Lips. von H.• Z. Hu, C. Grazioli, S.-L. Drechsler.
Manalo. S.• M. Michor, M. El-Hagary, G. Hilscher and
G. Behr, M. Knupfer, M.S. Golden. r, Fink. H. Ros-
E. Schachinger, 2001, Phys. Rev. B 63,104508.
ner and G. Kaindl, 1999. Phys. Rev. B 60.11444.
Mandal, P.• and K. Winzer. 1997. Solid State Commun.
Loewenhaupt, M., A. Kreyssig, C. Sierks, K.-H. MUl-
103.679.
ler, J, Freudenberger, C. Riner and H. Schober.
Maple. M.B .. and 0. Fischer (eds), 1982. Superconduc-
1997. in: ILL Anual Report. eds H.G. BUttner and
tivity in Ternary Compounds II. Superconductivity
A.1. Leadbetter (Grenoble) p. 37.
and Magnetism (Springer. Berlin).
London. F.• and H. London. 1935. Proc. Roy. Soc. Maple, M.B .• 1995. Physica B 215.110.
(London) A149. 71; 1935. Physica 2.341. Maska, M.M .• and M. Mierzejewski. 2001. Phys. Rev.
Looney. C.• A.K. Gangopadhyay. A.-K. Klehe and B 64. 064501.
r.s. Schilling. 1995, Physica C 252. 199. Matsuda, N.• H. Setoguchi, T. Kagayama, G. Oomi,
Luke. G.M .• L.P. Le, B.J. Sternlieb, YJ. Uemura, B.K. Cho and P.C. Canfield. 2001. Physica B 281-
J.H. Brewer, R. Kadono, R.F. Kieft. S.R. Kreitz- 282.1001.
man. T.M. Riseman, C.E. Stronach. M.R. Davis. Matsumoto, H.• H. Umezawa and M. Tachiki, 1979.
S. Uchida. H. Takagi. Y. Tokura, Y. Hidaka, T. Mu- Solid State Commun. 31, 157.
rakami. J. Gopolakrishnan, A.W. Sleight. M.A. Sub- Mattheiss, L.P.. 1994. Phys. Rev. B 49. 13279.
ramanian. E.A. Early. IT. Markert. M.B. Maple and Mattheiss, L.F.• T. Siegrist and R.I. Cava, 1994. Solid
C.L. Seaman. 1990. Phys. Rev. B 42. 7981. State Commun. 91. 587.
Lynn. J.w.. 1992. r. Alloys & Comp.181. 419. Matthias, B.T., H. Suhl and E. Corenzwit, 1958a, Phys.
Lynn. J.W., Q. Huang. A. Santoro. R.I. Cava, J.J. Kra- Rev Lett. I. 92.
jewski and W.P. Peck. Jr.. 1996, Phys. Rev. B 53, Matthias. B.T.• H. Suhl and E. Corenzwit, 1958b, Phys.
802. Rev Lett. 1, 449.
Lynn. lW., 1997. l Alloys & Compo 250, 552. Matthias. B.T.• and R.M. Bozorth, 1958. Phys. Rev.
Lynn. I.W.• 2001. in: Rare Earth Transition Metal 109.604.
Borocarbides (Nitrides): Supercondueting, Mag- Matthias. B.T.• T.H. Geballe, K. Andres. E. Corenzwit,
netic and Nonnal State Properties, eds K.-H. MUlier G.W. Hull and J.P. Maita, 1968. Science 159.530.
Mazumdar, Ch., R. Nagarajan, e. Godart, L.C. Gupta, Movshovich, R., M.E Hundley, J.D. Thompson.
M. Latroche, S.K. Dhar, e. Levy-Clement, P.C. Canfield. B.K. Cho and A.V. Chubukov, 1994,
B.D. Padalia and R. Vijayaraghavan, 1993, Solid Physica C 227. 381.
State Commun. 87. 413. Milller, K.-H .• A. Kreyssig, A. Handstein, G. Fuchs,
Mazumdar, Ch., Z. Hossain. S. Radha, A.K. Nigam, e. Ritter and M. Loewenhaupt, 1997, J. Appl. Phys.
R. Nagarajan, L.C. Gupta, C. Godart, B.D. Padalia, 81.4240.
G. Chandra and R. Vijayaraghavan, 1996. Physica Miiller, K.-H., A. Handstein, O. Eckert, G. Fuchs,
B 223-224. 102. K. Nenkov, 1. Freudenberger, M. Richter and
Mazumdar, Ch .• Z. Hu, H. von Lips, M.S. Golden, M. Wolf. 1998. Physica B 246-247. 226.
J. Fink, P.C. Canfield and G. Kaindl, 2001, Phys. Muller, K.-H.. and V.N. Narozhnyi, 200la. Rep. Prog.
Rev. B 64. 020504. Phys .• 64. 943.
McMillan. WL., 1968, Phys. Rev. 167, 331. Muller, K.-H., and V.N. Narozhnyi (eds), 2001b, Rare
Meenakshi, S., V. Vijayakumar, R.S. Rao, B.K. God- Earth Transition Metal Borocarbides (Nitrides): Su-
wal, S.K. Sikka, Z. Hossain, R. Nagarajan, perconducting, Magnetic and Normal State Proper-
L.C. Gupta and R. Vijayaraghavan, 19%, Physica ties, (Kluwer Acad. PubI., Dordrecht) pp. 1-445.
B 223-224, 93.
Muller, K.-H., J. Freudenberger, G. Fuchs, K. Nenkov,
Meenakshi, S.• V. Vijayakumar, R.S. Rao, B.K. God-
A. Kreyssig and M. Loewenhaupt, 2001a, in: Rare
wal, S.K. Sikka, P. Ravindran, Z. Hossain, R. Na- Earth Transition Metal Borocarbides (Nitrides): Su-
garajan, L.C. Gupta and R. Vijayaraghavan, 1998,
perconducting, Magnetic and Normal State Proper-
Phys. Rev. B 58, 3377.
ties, eds K.-H. Muller and V.N. Narozhnyi (K1uwer
Meiklejohn, W.H., and C.P. Bean, 1957, Phys. Rev. Acad. Publ., Oordrecht) p. 255.
105.904.
Muller, K.-H., G. Fuchs, A. Handstein, K. Nenkov,
Metlushko, Y.. U. Welp, A. Koshelev, I. Aranson,
Y.N. Narozhnyi and O. Eckert, 2001b, 1. Alloys &
G.W Crabtree and P.e. Canfield, 1997, Phys. Rev.
Compo 322, LID.
Leu. 79, 1738.
Muller-Hartman, E.• and J. Zittartz, 1971, Phys. Rev.
Michor, H., T. Holubar, e. Dusek and G. Hilscher.
Lett. 26, 428.
1995, Phys. Rev. B 52, 16165.
Mulder, EM., J.H.V.J. Brabers, R. Coehoorn,
Michor, H., R. Krendelsberger, G. Hilscher, E. Bauer.
R.C. Thiel, K.H.J. Buschow and ER. de Boer,
e. Dusek, R. Hauser, L. Naber, O. Werner, P. Rogi
1995, J. Alloys & Compo 217,118.
and H.W. Zandbergen, 1996. Phys. Rev. B 54, 9408.
Mulders, A.M .• P.e.M. Gubbens, U. Gasser, e. Baines
Michor, H.• G. Hilscher, R. Krendelsberger, P. Rogi and
and K.HJ. Buschow, 1998, J. Magn. Magn. Mater.
F. Bouree, 1998. Phys. Rev. B 58, 15045.
177-181.555.
Michor, H., M. El-Hagary, R. Hauser, E. Bauer and
G. Hilscher, 1999, Physica B 259-261, 604. Mun, M.O., S.1. Lee, WC. Lee, P.e. Canfield,
Michor, H.• M. El-Hagary, L. Naber, E. Bauer and B.K. Cho and D.C. Johnston. 1996, Phys. Rev. Lett.
76,2790.
G. Hilscher. 2000, Phys. Rev. B 61. 6487.
Michor, H.• S. Manalo and G. Hilscher, 2001. in: Rare Mun, M.O., M.S. Kim, S.1. Lee. B.K. Cho, I.S. Yang,
Earth Transition Metal Borocarbides (Nitrides): Su- we. Lee and P.C. Canfield. 1998, Physica C 303,
perconducting. Magnetic and Normal State Proper- 57.
ties. eds K.-H. Muller and Y.N. Narozhnyi (Kluwer Murayama, c.. N. Mori, H. Takagi, H. Eisaki, K. Mi-
Acad. PubI., Oordrecht) p. 45. zuhashi, S. Uchida and RJ. Cava. 1994. Physica C
Miranovic, P., and Y.G. Kogan, 2001. Phys. Rev. Leu. 235-240. 2545.
87,137002. Murdoch 1., H. Salamati, G. Quirion and F.S. Razavi,
Morin, P., and O. Schmitt, 1990, in: Ferromagnetic Ma- 1999, Physica C 321, 108.
terials. vol. 5, eds Buschow K.HJ. and E.P. Wohl- Nagamatsu, J., N. Nakagawa, T. Muranaka, Y. Zenitani
farth (Elsevier. Amsterdam) p. 1. and J. Akimitsu, 2001. Nature 410, 63.
Moriya, T.• 1960, Phys. Rev. 117.635. Nagarajan, R., Ch. Mazurndar, Z. Hossain, S.K. Dhar,
Morozov, A.I .• 1980, Sov. Phys. Solid State 22, 1974. K.Y. Gopa1akrishnan, L.C. Gupta, C. Godart,
Morosov, A.I., 2001, in: Rare Earth Transition Metal B.D. Padalia and R. Vijayaraghavan, 1994, Phys.
Borocarbides (Nitrides): Superconducting, Mag- Rev. Lett. 72, 274.
netic and Normal State Properties, eds K.-H. Muller Nagarajan, R., L.C. Gupta, Ch. Mazumdar, Z. Hossain,
and V.N. Narozhnyi (K1uwer Acad. PubI., Dor- S.K. Ohar, C. Godart, B.D. Padalia and R. Vija-
drecht) p. 287. yaraghavan, 1995, 1. Alloys & Compo 225, 571.
MAGNETIC AND SUPERCONDUcrING PROPERTIES OF RNi2B2C 301
Nagarajan, R.. and L.C. Gupta. 1998. in: Studies of Ng, T.K.• and C.M. Varma, 1997. Phys. Rev. Lett. 78.
High Temperature Superconductors. vol. 26. ed. 330.
A. V. Narlikar (Nova Science Publ.. New York) p. I. Nieuwenhuys, G.I .• B.H. Verbeek and J.A. Mydosh,
Nagarajan, R.• E. Alieno. S.I. Blundell. Ch. Mazum- 1979. J. Appl. Phys. SO. 1685.
dar. D.W. Cooke. S.P. Cottrell. S.FJ. Cox. C. Go- Nohara, M., M.lsshiki. H. Takagi and R.I. Cava, 1997.
dart. L.c. Gupta, Z. Hossain. W.L. Hults. Th. Jes- J.Phys.Soc.Jpn.66.1888.
tadt, E.J. Peterson. EL. Pratt and J.L. Smith. 1999. Nohara, M.• M. Isshiki, F. Sakai and H. Takagi. 1999.
Physica B 259-261. 588. J. Phys. Soc. Jpn. 68. 1078.
Nagarajan. R.• 2001. in: Rare Earth Transition Metal
Nergaard, K.. M.R. Eskildsen, N.H. Andersen, J. Jen-
Borocarbides (Nitrides): Superconducting, Mag-
sen, P. Hedeglrd, S.N. Klausen and P.C. Canfield.
netic and Normal State Properties. eds K.-H. MUlier
2000. Phys. Rev. Lett. 84. 4982.
and V.N. Narozhnyi (Kluwer Acad. Publ., Dor-
Onodera, H., H. Yamauchi and Y. Yamaguchi, 1999. J.
drecht) p. I.
Phys. Soc. Jap. 68. 2526.
Nakai. N.• M. Ichioka and K. Machida, 2002. J. Phys.
Oomi, G.• N. Matsuda, F. Honda. T. Kagayama,
Soc. Jap. 71. 23.
K. Honda. B.K. Coo and P.C. Canfield. 1999. Phys-
Narozhnyi, V.N.• V.N. Kochetkov, A.V. Tsvyashchenko
and L.N. Fomicheva, 1996. J. Low Temp. Phys. 105. ica B 259-261, 601.
1647. Oomi, G.. T. Kagayama, H. Mitamura, T. Goto,
Narozhnyi, V.N.• J. Freudenberger, V.N. Kochetkov. B.K. Cho and P.C. Canfield, 2001. Physica B 294-
K.A. Nenkov, G. Fuchs. A. Handstein and 295.229.
K.-H. MUlier. 1999a. Phys. Rev. B 59. 14762. Paranthaman, M., and B.C. Chakoumakos, 1998. in:
Narozhnyi, V.N.• V.N. Kochetkov, A.V. Tsvyashchenko Studies of High Temperature Superconductors.
and L.N. Fomicheva, 1999b, Solid State Commun. vol. 26. ed. A.V. Narlikar (Nova Science Publ .• New
111.259. York) p. 97.
Narozhnyi, V.N.. 1. Freudenberger, G. Fuchs. Paul. D. McK .• H.A. Mook, A.W. Hewat, B.C. Sales.
K.A. Nenkov, D. Eckert, A. Czopnik and L.A. Boatner, J.R. Thompson and M. Mostoller,
K.-H. MUlier. 1999c. 1. Low Temp. Phys. 117. 1988. Phys. Rev. B 37, 2341.
1599. Paul. D. McK .• c.v. Tomy, C.M. Aegerter. R. Cubitt,
Narozhnyi, V.N.• and S.-L. Drechsler. 1999. Phys. Rev. S.H. Lloyd. E.M. Forgan. S.L. Lee and M. Yethiraj.
Lett. 82. 461. 1998. Phys. Rev. Lett. SO. 1517.
Narozhnyi, V.N.. G. Fuchs. 1. Freudenberger, Paul. D. McK .• N.I. Bancroft. C.v. Tomy, C.D. De-
K. Nenkov and K.-H. MUlier. zooos, Physica whurst. R. Cubirr, M. Yethiraj, C.M. Aegerter.
B~288.535. S.L. Lee. S.H. Lloyd. P.G. Kealey and E.M. Forgan,
Narozhnyi, V.N.• G. Fuchs. K. Nenkov, D. Eckert, 2001. in: Rare Earth Transition Metal Borocarbides
A. Teresiak, K.-H. MUlier and P.C. Canfield. 2ooob. (Nitrides): Superconducting. Magnetic and Normal
Physica C 341-348. 1141. State Properties. eds K.-H. MUlier and V.N. Narozh-
Narozhnyi, V.N.. G. Fuchs, J. Freudenberger, nyi (Kluwer Acad. Publ., Dordrecht) p. 323.
K.A. Nenkov, D. Eckert. A. Teresiak, A. Czopnik
Peng, Z.Q .• K. Krug and K. Winzer, 1998, Phys. Rev B
and K.-H. MUlier. 2001a, in: Rare Earth Transition
57. R8123.
Metal Borocarbides (Nitrides): Superconduct-
Peter. M.• P. Donze. O. Fischer. A. Junod. J. Ortelli,
ing, Magnetic and Normal State Properties, eds
A. Treyvaud, E. Walker, M. Wilhelm and B. Hillen-
K.-H. Miiller and V.N. Narozhnyi (Kluwer Acad.
brand, 1971. Helv. Phys. Acta 44.345.
Publ., Dordrecht) p. 171.
Narozhnyi, V.N.. G. Fuchs. J. Freudenberger, Pfleiderer C.• M. Uhlarz, S.M. Hayden. R. Vollmer.
K. Nenkov and K.-H. Miiller. 200lb. Physica H.V. Lohneysen, N.R. Bernhoeft and G.G. Lon-
C 364-365, 571. zarich, 2001, Nature 412, 58.
Nass, MJ.• K. Levin and G.S. Grest, 1982. Phys. Rev. Pickett. W.E.• and D.I. Singh. 1994. Phys. Rev. Lett.
B 25. 4541. 72.3702.
Naugle, D.G .• K.D.D. Rathnayaka and P.C. Canfield, Prassides, K.• A. Lappas, M. Buchgeister and P. Verges.
1998. Int. 1. Mod. Phys. B. 12, 3174. 1995, Europhys. Lett. 29.641.
Naugle, D.G .• K.D.D. Rathnayaka and A.K. Bhatnagar, Prozorov, R.• E.R. Yakoby. I. Feiner and Y. Yeshurun,
1999, in: Studies of High Temperature Supercon- 1994. Physica C 233,367.
ductors. vol. 28. ed. A.V. Narlikar (Nova Science Ramirez. A.P.• N. Slilcheli and E. Bucher. 1995. Phys.
Publ., New York) p. 189. Rev. Lett. 74. 1218.
Rams. M.• K. Kr61as, P. Bonville. J.A. Hodges. Z. Hos- Russel. Y., R. Hirst. F.A. Kanda and A.J. King, 1953.
sain, R. Nagarajan, S.K. Dhar, i,c. Gupta. E. Al- Acta Cryst. 6, 870.
Ieno and C. Godart. 2000. J. Magn. Magn. Mater. Rybaltchenko, L.E, A.G.M. Jansen, P. Wyder.
219.15. L.V. Tjutrina, P.c. Canfield. C.Y. Tomy and
Rapp, R.E .• and M. EI Massalami, 1999, Phys. Rev. B D.McK. Paul, 1999. Physica C 319. 189.
60.3355. Saha, N., R. Surdeanu, M. Marchevsky, GJ. Nieuwen-
Rathnayaka, K.D.D., D.G. Naugle, B.K. Cho and huys, C.D. Dewhurst, R.I. Wijngaarden, D.McK.
P.c. Canfield. 1996, Phys. Rev. B 53, 5688. Paul and P.H. Kes, 2000. Phys. Rev. B 63. 020502.
Rathnayaka, K.D.D .• A.K. Bhatnagar, A. Parasiris, Sakai, T.• G. Adachi and J. Shiokawa, 1981, Sol. State
D.G. Naugle. P.C. Canfield and B.K. Cho, 1997, Commun. 40.445.
Phys. Rev. B 55. 8506. Sakai, T.. G. Adachi and 1. Shiokawa, 1982. J. Less
Rathnayaka, K.D.D .• D.G. Naugle. S. Li, M.C. de Comm. Metals 84,107.
Andrade. R.P. Dickey, A. Amann. M.B. Maple, Sakata. H.• M. Oosawa, K. Matsuba, N. Nishida.
S.L. Bud·ko. P.C. Canfield and W.P. Beyermann, H. Takeya and K. Hirata, 2000, Phys. Rev. Lett. 84.
1999. Int. 1. Mod. Phys. B 13. 3725. 1583.
Ravindran, P.• B. Johansson and O. Eriksson. 1998. Sala, R., E Borsa, E. Lee and P.c. Canfield. 1997, Phys.
Phys. Rev. B 58. 338 I. Rev. B 56, 6195.
Rhee, J.Y.• X. Wang and B.N. Harmon, 1995, Phys. Sanchez. D.R .• H. Micklitz, M.B. Fontes. S.L. Bud'ko
Rev. B 51, 15585. and E. Baggio-Saitovitch, 1996. Phys. Rev. Lett. 76.
Riblet, G., and K. Winzer. 1971. Sol. State Commun. 507.
9.1663. Sanchez, D.R.. M.A.C. de Melo, M.B. Fontes,
Richardson. C.F., and N.W. Ashcroft. 1997. Phys. Rev. S.L. Bud'ko, E. Baggio-Saitovitch, M. Hillberg,
Lett. 78. 118. W. Wagener. H.-H. KlauB, G.H. Waif and FJ. Lit-
da Rocha. ES., G.L.F. Fraga, D.E. Brandao and terst, 1998. Phys. Rev. B 57, 10268.
A.A. Gomes. 200 I. Physica C 363. 41. Sanchez. J.P.. P. Vulliet. C. Godart, L.c. Gupta, Z. Hos-
Rogl, P., 1984, in: Handbook on the Physics and Chem- sain and R. Nagarajan, 1996, Phys. Rev. B 54. 9421.
istry of Rare Earths, eds K.A. Gschneider, Jr.. and Sarrao, J.L., M.C. de Andrade, J. Herrmann. S.H. Han,
L. Eyring, vol. 6 (Elsevier Sci. Publ., Amsterdam) Z. Fisk, M.B. Maple and R.I. Cava, 1994, Physica
p.335. C 229. 65.
Rosner, H.• S.-L. Drechsler, S.V. Shulga, K. Koepemik, Savitskii, E.M., Y.V. Baron, Y.Y. Efimov, M.1. By-
I. Opahle and H. Eschrig, 2000. in: Adv. Solid State chkova and L.F. Myzenkova, 1973, Superconduct-
Physics, vol. 40, ed. B. Kramer (Vieweg & Sohn, ing materials (Plenum Press, New York).
Braunschweig) p. 713. Saxena, S.S .. P. Aragwal, K. Ahilan, EM. Grosche,
Rosner, H.• S.-L. Drechsler. K. Koepemik, I. Opahle R.K.W. Haselwimmer, MJ. Steiner, E. Pugh,
and H. Eschrig, 2001. in: Rare Earth Transi- I.R. Walker, S.R. Julian, P. Monthoux, G.G. Lonza-
tion Metal Borocarbides (Nitrides): Superconduct- rich, A. Huxley, I. Sheikin, D. Braithwaite and
ing, Magnetic and Normal State Properties, eds J. Flouquet, 2000, Nature 406. 587.
K.-H. Miiller and V.N. Narozhnyi (Kluwer Acad. Saxena, S.S., and P. Littlewood. 2001. Nature 412, 290.
Publ.. Dordrecht) p. 7 I. Schmidt, H.• and H.E Braun. 1994, Physica C 229. 315.
Rosseinsky, MJ., A.P. Ramirez. S.H. Glarum, Schmidt. H., M. Miiller and H.F. Braun, 1994, Physica
D.W. Murphy, R.C. Haddon, A.E Hebard, C 235-240, 779.
T.T.M. Palstra, A.R. Kortan, S.M. Zahurak Schmidt, H.. M. Weber and H.E Braun, 1995. Physica
and A.V. Makhija, 1991. Phys. Rev. Lett. 66. 2830. C 246,177.
Roth, S.• 1978. Appl. Phys. 15. I. Schmidt. H., 1997. Wechselwirkung von Supraleitung
Rotter. M., C. Sierks, M. Loewenhaupt, J. Freuden- und Magetismus in quatemaren Borocarbid-
berger and H. Schober, 2001, in: Rare Earth Transi- Verbindungen, Thesis. Universitat Bayreuth.
tion Metal Borocarbides (Nitrides): Superconduct- Schmidt, H., and H.E Braun. 1997. Phys. Rev. B 55,
ing, Magnetic and Normal State Properties, eds 8497.
K.-H. MUlier and Y.N. Narozhnyi (Kluwer Acad, Schmidt, H., A. Derringer, B. Emstberger and
Publ., Dordrecht) p. 137. H.E Braun. 1997, J. Alloys & Compo 262-263. 459.
Rukang, L.. X. Chaoshui, Z. Hong, L. Bin and Y. u, Schmidt. H.. and H.F. Braun. 1998, in: Studies of
1995, J. Alloys & Compo 223, 53. High Temperature Superconductors, vol. 26. ed.
Rupp, B.• P. Rogi and E Hulliger, 1987. J. Less Comm. A.V. Narlikar (Nova Science Publ., New York)
Met. 135. 113. p.47.
Schmiedeshoff, G.M., e. De Boer, M.V. Tompkins, Song, C., Z. Islam, L. Lotterrnoser, A.I. Goldman,
WP. Beyermann, A.H. Lacerda, 1.L. Smith and P.C. Canfield and C. Detlefs, 1999a. Phys. Rev. B
P.C. Canfield, 2000, J. Supercond. 13,847. 60,6223.
Schmiedeshoff, G.M., J.D. Detwiler, W.P. Beyerrnann, Song. K.I.•1.R Thompson, M. Yethiraj. O.K. Christen,
A.H. Lacerda, P.C. Canfield and J.L. Smith, 2001, C.V. Tomy and D. McK. Paul, 1999b, Phys. Rev. B
Phys. Rev, B 63,134519. 59.6620.
Schon, J.H .. Ch. Kloc and B. Batlogg. 2000, Nature Song. C., D. Wenneille. A.I. Goldman. P.C. Canfield.
408.549. J.Y. Rhee and B.N. Harmon. 2001a. Phys. Rev. B
Schon. 1.H.• Ch. Kloc and B. Batlogg, 2001. Science 63.104507.
293,2432. Song, C.• J.L. Lang. C. Detlefs, A. Letoublon,
Sera. M., S. Kobayash, M. Hiroi, N. Kobayashi. W. Good, J. Kim, D. Werrneille. S.L. Bud'ko,
H. Takeya and K. Kadowaki, 1996, Phys. Rev. B 54, P.e. Canfield and A.I. Goldman, 2001b. Phys. Rev.
3062. B 64, 020403(R).
Shelton. R.N., L.S. Hausermann-Berg, M.J. Johnson. Sonier. J.E., M.F. Hundley, J.D. Thompson and
P. Klavins and H.D. Yang, 1986. Phys. Rev. B 34. J.W Brill, 1999, Phys. Rev. Lett. 82, 4914.
199. Stanley. H.B., J.W. Lynn, RN. Shelton and P. Klavins,
Shimizu, K.• T. Kimura, S. Furomoto, K. Takeda, 1987, J. Appl. Phys. 61, 3371.
K. Kontani, Y. Onuki and K. Amaya, 2001, Nature Steglich, E. Cm. Geibel. R. Medler, M. Lang, P. Hell-
412,316. mann and Ph. Gegenwart, 1995. J. Low Temp. Phys.
Shiraishi, 1., M. Kohmoto and K. Maki, 1999. Phys. 99,267.
Rev. B 59,4497. Sternlieb, B.• C. Stassis, A.I. Goldman. P. Canfield and
Shubnikov, L.V., V.I. Khotkevich, Yu.D. Shepe1ev and S. Shapiro. 1997. J. Appl. Phys. 81, 4937.
Yu.N. Riabinin, 1937, Zh. Eksp. Teor. Fiz. 7. 221 Strom. V.• K.S. Kim, A.M. Grishin and K.V. Rao, 1996.
(transl., 1936, Phys. Z. Sowjet. 10, 165). 1. App!. Phys. 79, 5860.
Shulga, S.V., S.-L. Drechsler, G. Fuchs, K.-H. Milller, Strukova, G.K., V.F. Degtyareva, D.V. Shovkun,
K. Winzer. M. Heinecke and K. Krug, 1998, Phys. V.N. Zverev, V.M. Kiiko, A.M. lonov and
Rev. Lett. SO, 1730. A.N. Chaika, 2001, cond-matlOI05293.
Shulga, S.V.• and S.-L. Drechsler, 2001, in: Rare Earth Suh, 8.1., F. Borsa, D.R. Torgeson, B.K. Cho, P.C. Can-
Transition Metal Borocarbides (Nitrides): Super- field. D.C. Johnston. J.Y. Rhee and B.N. Harmon.
conducting. Magnetic and Nonnal State Proper- 1996, Phys. Rev. 8 53. R6022.
ties. eds K.-H. Miiller and V.N. Narozhnyi (Kluwer Suhl, H.• 2001, Phys. Rev. Lett. 87, 167007.
Acad. Publ., Dordrecht) p. 393. Szymczak. R. H. Szymczak. L. Gladczuk and
Shulga, S.V.. and S.-L. Drechsler, 2002, cond- M. Baran, 1996, J. Magn. Magn. Mater. 157-158,
mattl0202172. 706.
Siegrist. T., H.W. Zandbergen, R.J. Cava. J.J. Krajew- Takagi, H.. RJ. Cava, H. Eisaki, J.O. Lee.
ski and W.F. Peck, Jr.• 1994a, Nature 3(,7, :t54. K. Mizuhashi, B. Batlogg, S. Uchida, U. Kra-
Siegrist. T., R.I. Cava, U. Krajewski and W.F. Peck. jewski and W.E Peck, Jr.. 1994. Physica C 228.
Jr.• 1994b, J. Alloys & Comp. 216, 135. 389.
Sierks, C., M. Loewenhaupt, P. Tils, J. Freudenberger, Takagi. H., M. Nohara and R.1. Cava. 1997, Physica B
K.-H. Muller, C.-K. Loong and H. Schober, 1999. 237-238, 292.
Physica B 259-261, 592. Takanaka, K.• and K. Kuboya, 1995. Phys. Rev. Lett.
Silhanek, A.V., J.R Thompson, L. Civale, D. McK. 75,323.
Paul ande.V. Tomy. 2001, Phys. Rev. B 64, 012512. Takeya, H.• T. Hirano and K. Kadowaki, 1996, Physica
Simon, A.• H. Mattausch, R. Eger and R.K. Kremer. C 256, 220.
1991, Angew. Chem. 103, 1210. Thomlinson, W, G. Shirane, 1.W Lynn and
Singh. 0.1.,1994, Phys. Rev. B SO,6486. D.E. Moncton. 1982, in: Superconductivity in
Sinha. S.K.. 1.W Lynn. T.E. Grigereit, Z. Hossain, Ternary Compounds II, Superconductivity and
L.e. Gupta, R. Nagarajan and C. Godart, 1995. Magnetism. eds M.B. Maple and 0. Fischer
Phys. Rev. B 51, 681. (Springer. Berlin) p. 229.
Skanthakumar, S., J.W. Lynn, N. Rosov, G. Cao and Tinkham, M.• 1994, Physica C 235--240, 3.
J.E. Crow, 1997, Phys. Rev. B 55, R3406. Tomala, K., J.P. Sanchez. P. Vulliet. P.C. Canfield.
Skanthakumar, S.• and J.W Lynn. 1999, Physica B Z. Drzazga and A. Winiarska. 1998, Phys. Rev. B
259-261. 576. 58,8534.
Tomilo, Zh.• P. Molchan. S. Ustinovich, V. Finskaya, Winzer. K., Z. Peng and K. Krug, 1999. Physica B 259-
N. Prytkova and L. Kurochkin, 1999. J. Low Temp. 261.586.
Phys. 117. 1635. Winzer. K.. 2002. private communications.
Tomilo, Zh.M .• P.V. Molchan. A.S. Shestak, Y.M. Fin- Wohlfarth. E.P.• 1968. J. Appl. Phys. 39. 1061.
skaya and N.A. Prytkova, 2001. in: Rare Earth
Wohlfarth. E.P.. 1979. Phys. Lett. A 75. 141.
Transition Metal Borocarbides (Nitrides): Super-
conducting. Magnetic and Normal State Proper- Won. H., and K. Maki, 2001. in: Rare Earth Transi-
ties, eds K.-H. MUlier and Y.N. Narozhnyi (Kluwer tion Metal Borocarbides (Nitrides): Superconduct-
Acad. Publ., Dordrecht) p. 375. ing, Magnetic and Normal State Properties, eds
Tominez, E.. P. Berger. E. Alieno. B. Decamps, K.-H. Miiller and V.N. Narozhnyi (Kluwer Acad.
G. Schiffmacher, M. Bohn and C. Godart. 1998. J. Publ., Dordrecht) p. 379.
Alloys & Compo 275-277.123. Wright. D.A .• lP. Emerson. B.F. Woodfield. J.E. Gor-
Tominez, E.• E. Alieno. P. Berger. M. Bohn, e. Mazurn- don. R.A. Fisher and N.E. Phillips, 1999. Phys. Rev.
dar and C. Godart. 2000. J. Sol. State Chern. 154, Lett. 82, 1550.
114. wo, M.K., lR. Ashburn. CJ. Torng, P.H. Horr,
Tomy,C. Y.. M.R. Lees. L. Afalfiz, G. Balakrishnan and R.L. Meng, L. Gao, ZJ. Huang, Y.Q. Wang and
D. McK. Paul. 1995. Phys. Rev. B 52. 9186. C.W. Chu, 1987. Phys. Rev. Lett. 58, 908.
Tomy, C.V.• L.A. Afaltiz, M.R. Lees, J.M. Martin, Xu, C.H., and G.E. Scuseria, 1995, Phys. Rev. Leu. 74,
D.McK. Paul and D.T. Adroja, 199611. Phys. Rev.
274.
B 53. 307.
Xu, M.• P.c. Canfield, J.E. Ostenson. D.K. Finnemore,
Tomy, C.V., M.R. Lees. G. Balakrishnan, D.T. Adroja
B.K. Cho, Z.R. Wang and D.C. Johnston. 1994,
and D. McK. Paul. 1996b. Physica B 223-224. 62.
Physica C 227. 321.
Tomy, C.V., J.M. Martin and D.McK. Paul. 1996c,
Physica B. 223-224. 116. Yamauchi. H.• H. Onodera, K. Ohoyama, T. Onimaru,
Uehara. M., T. Nagata. l Akimitsu, H. Takahashi. M. Kosaka, M. Ohashi and Y. Yamaguchi, 1999, J.
N. Mori and K. Kinoshita, 1996, J. Phys. Soc. Jap. Phys. Soc. Jap. 68. 2057.
65,2764. Yang. 1.-5.• M.V. Klein, S.L. Cooper. P.c. Canfield.
Uwatoko, Y., G. Oomi, P.C. Canfield and B.K. Cho, B.K. Cho and SA. Lee, 2000, Phys. Rev. B 62,
1996, Physica B 216, 329. 1291.
Vinnikov L.Ya.. T.L. Barkov, P.c. Canfield, Yanson, I.K., Y.Y. Fisun, A.G.M. Jansen. P. Wyder,
S.L. Bud'ko and V.G. Kogan. 200la. Phys. P.e. Canfield. B.K. Cho. C.V. Tomy and D.McK.
Rev. B 64, 024504. Paul. 1997. Phys. Rev. Leu. 78, 935.
Vinnikov L.Ya.. T.L. Barkov, P.C. Canfield,
Yaron, U.• P.L. Gammel. A.P. Ramirez. D.A. Huse,
S.L. Bud'ko, J.E. Ostenson, ED. Laabs and
DJ. Bishop, A.I. Goldman. C. Stassis, P.e. Can-
V.G. Kogan. 200lb. Phys. Rev. B 64. 220508.
field. K. Mortensen and M.R. Eskildsen, 1996. Na-
Wagner, T.A.. A. Dertinger, W Ettig, A. Krause.
ture. 382. 236.
H. Schmidt and H.E Braun. 1999. Physica C 323.
71. Yatskar, A.• N.K. Budraa, W.P. Beyerrnann, P.e. Can-
Wang. G.-F.. and K. Maki. 1998. Phys. Rev. B 58. field and S.L. Bud'ko, 1996, Phys. Rev. B 54.
6493. R3772.
Wang. Z.D .. J. Dong and C.S. Ting, 1994. Phys. Rev. Yatskar, A.. C.H. Mielke, P.c. Canfield. A.H. Lacerda
Lett. 72. 3875. and W.P. Beyermann, 1999. Phys. Rev. B 60.8012.
Weht. R.. O.M. Cappannini, c.o. Rodriguez and Yethiraj, M.• D.McK. Paul. e.v. Tomy and E.M. For-
N.E. Christensen. 1996. Physica C 260. 125. gan. 1997. Phys. Rev. Leu. 78. 4849.
Wijngaarden. RJ.• and R. Griessen, 1992. in: Con- Yethiraj, M., D.McK. Paul. C.Y. Tomy and
cise Encyclopedia of Magnetic & Superconducting J.R. Thompson, 1998. Phys. Rev. B 58. 14767.
Materials. ed. J, Evets (Pergamon Press. Oxford)
Yokoya, T.• T. Kiss. T. Watanabe. S. Shin. M. Nohara,
p.583.
H. Takagi and T. Oguchi, 2000, Phys. Rev. Lett. 85,
Williams, J.M., AJ. Shultz. U. Geiser. K.D. Carl-
4952.
son. A.M. Kini. H.H. Wang. WK. Kwok,
M.H. Whangbo and lE. Schirber, 1991, Sci- Yosida, K., 1996. Theory of Magnetism (Springer.
ence 252, 1501. Berlin).
Willis. lO.• DJ. Erickson. C.E. Olsen and R.D. Taylor. Zandbergen, H.W.. J. Jansen. RJ. Cava. U. Krajewski
1980. Phys. Rev. B 21, 79. and WF. Peck. Jr.• 1994a. Nature 372. 759.
MAGNETIC AND SUPERCONDUCIlNG PROPERTIES OF RNi2B2C 305
Zandbergen, H.W., T.1. Gortenmulder, 1.L. Sarrac, Zarestky, J., C. Stassis, A. Goldman, P. Canfield,
1.C. Harrison, M.e. de Andrade, 1. Hermann, G. Shirane and S. Shapiro, 1999, Phys. Rev. B 60,
S.H. Han, Z. Fisk, M.B. Maple and R.I. Cava, 11932.
1994b, Physica C 232, 328. Zou, Z., J. Ye, K. Oka and Y. Nishihara, 1998, Phys.
Zandbergen, H.W., R.I. Cava. J.1. Krajewski and Rev. Len. 80, 1074.
W.F. Peck, Jr., 1994c, 1. Sol. State Chern. 110, 196. Zwicknagl, G., and P. Fulde, 1981, Z. Phys. B: Con-
Zarestky J.• C. Stassis, A.1. Goldman, P.C. Canfield, dens. Maner 43, 23.
P. Dervenagas, B.K. Cho and D.e. Johnston, 1995,
Phys. Rev. B 51, 678.
chapter 4
SPONTANEOUS MAGNETOELASTIC EFFECTS

IN GADOLINIUM COMPOUNDS
A. L1NDBAUM
Institut fiir Festkorperphysik, Technische Universitlit Wien
Wiedner Hauptstrasse 8-10/138, A-1040 Wien
Austria
e-mail: andreas.lindbaum@ifp.tuwien.ac.at
M. ROTTER
Institut fUr Angewandte Physik, Technische Universitiit Dresden
0-01062 Dresden
Germany
e-mail: rotter@physik.tu-dresden.de

Edited by K.HJ. Buschow
@ 2002 Elsevier Science B. V. All rights reserved
307
CONTENTS
Abstract . 309
I. Introduction . . 309
2. Experimental methods ... 311
3. Microscopic Theory of Magnetoelastic Effects in Gd compounds . 311
4. Magnetovolume effects in cubic systems . 315
4.1. GdAlz 316
4.2. GdNiz 317
4.3. GdIn3 317
4.4. GdCuZIn and GdPdZIn . 318
5. Spontaneous distortions of the crystal symmetry .. 319
6. Hexagonal systems . . . . . . . . . . 320
6.1. Gadolinium . . 320
6.2. GdNi5 . 322
6.3. Gdj ln . 323
6.4. GdCuAI and GdNiAI . 324
6.5. GdCuSn . 327
7. Tetragonal systems . 329
7.1. GdAgZ and GdAuz . . 329
7.2. GdzCuzIn and GdzNiz_xIn .. 331
7.3. GdNizBzC . 334
8. Orthorhombic systems . 336
8.1. Magnetostructural transitions in Gd5(SixGel_x)4 compounds . . . 336
8.2. GdNi . . . . 339
8.3. GdNil_xCUx 341
8.4. GdCu 342
8.5. GdPt . 342
8.6. GdCuZ' 344
8.7. GdZnz. 350
8.8. Gd(CUI_xNix}z . . . 351
8.9. Gd3Ni and Gd3Rh .. 352
8.10. GdBaZCu307-~ .. 353
9. Monoclinic systems . . . . 354
10. Summary and conclusions 355
308
Abstract
The spontaneous magnetoelastic effects in Gd compounds are reviewed showing that

the strain dependence of the magnetic exchange interactions leads to significant effects.
These effects are equal in magnitude to well established single ion contributions in other
rare earth compounds with non vanishing orbital momentum (coming from the strain
dependence of the crystal field). In some cases the exchange contribution can produce
giant magnetostriction (GMS) or induce structural phase transitions. In order to extract
the influence of the Gd-Gd exchange interactions. we consider only Gd compounds with
partner elements showing no or only weak induced magnetic moments. The current status
of the theory is presented and compared to measurements performed by temperature
dependent x-ray diffraction and results of dilatometric measurements.
Key words: Pacs Magnetostriction 75.80
1. Introduction
In the past decade research on Gd compounds has been of interest for several reasons. They
are ideal model systems for the study of exchange interactions which are not disturbed by
the crystal field (Fontcuberta et a1. 1997; Hernando et a1. 1996). Recently Kobler et a1.
(1998. 1999b) showed that it is necessary to consider higher order exchange interactions
to account for the behaviour of several ferromagnetic and antiferromagnetic systems with
vanishing orbital momentum. New experiments indicate that the temperature dependence
of the spontaneous magnetization may not be described by the well known Bloch law
(Kobler et a1. 1999a).
Another interesting and often surprising point is that the spontaneous magnetoelastic
effects in Gd compounds have been found to be of the same magnitude as in other
rare earth compounds (Gratz and Lindbaum 1994). This shows that the contribution
of the exchange interaction to the magnetoelastic Hamiltonian is of equal importance
as the crystal field contribution and varies over several orders of magnitude: as an
example. in Gdj ln the spontaneous magnetoelastic effects are smaller than 10-4• whereas
GdNi exhibits spontaneous magnetostriction effects of more than one percent (Gratz and
Lindbaum 1998) and can therefore be classified as a GMS (giant magnetostriction) system.
A further important family ofGMS systems are the Gds(SixGel-x)4 compounds. In some
of these compounds so-called magnetostructural transitions have been observed. i.e, the
giant spontaneous as well as forced magnetoelastic effects can be connected with structural
transitions (Morellon et a!. 1998a; Morellon et a1. 2000).
309
310 A. LINDBAUM and M. ROTfER
It should be pointed out that also in compounds based on other rare earths it was
necessary to consider not only the crystal field interactions, but also the contribution of the
exchange interactions, in order to understand the observed magnetostrictive effects (e.g. in
the case of NdCU2 - see Rotter et aI. 2002). However, in Gd compounds this exchange
contribution can be studied without any ambiguity arising from the crystal field interaction,
because L = 0 for Gd 3+.
Due to the large absorption of thermal neutrons by the natural Gd isotope, neutron
diffraction experiments are difficult. Therefore the magnetic structures are often unknown
and in many cases no model for the spontaneous magnetostriction could be developed. A
number of attempts have been made to extract information about the magnetic structure
from specific heat experiments (Rotter et aI. 2oolb; Mallik and Sampathkurnaran 1998;
Bouvier et aI. 1991; Blanco et aI. 1991) and recently magnetic x-ray scattering using
synchrotron radiation has opened new possibilities (Detlefs et aI. 1996; Rotter et aI. 2000b).
The main subject of the present chapter is to review available experimental studies
of spontaneous magnetoelastic effects in intermetallic Gd compounds. The aim is to
show that the magnetic exchange interactions can lead to a wide variety of spontaneous
magnetoelastic effects, including pronounced negative and positive magnetovolume effects
as well as large anisotropic effects. Note: with positive (negative) effects we always
mean that in the magnetically ordered state the corresponding lattice parameter or the
volume is larger (smaller) than the values obtained by extrapolation from the paramagnetic
temperature range. This means: with positive or negative we mean the sign of the
magnetostrictive strains, which are defined relative to the paramagnetic range (and not
the sign of the magnetic contribution to the thermal expansion coefficient).
The concept of exchange-striction was already introduced by Callen and Callen (1965),
however, up to now only few studies on this subject are available. In order to extract the
influence of the magnetic exchange interactions, we consider only Gd compounds with
partner elements, which show no or only very small induced magnetic moments. This
means that we exclude for instance compounds with Co, Fe or Mn, whereas compounds
with Ni showing only weak induced magnetic moments are included in our study. For
a review of thermal expansion anomalies and spontaneous magnetostriction in rare-earth
intermetallics with Co and Fe the reader is referred to the chapter of Andreev (1995).
Invar effects in transition metals and alloys have been reviewed by Wasserman (1990).
The reader is also referred to the review by Morin and Schmitt (1990), dealing generally
with magnetoelastic effects in rare earth intermetallics, including two ion as well as
single ion magnetic interactions, with a special emphasis on quadrupolar interactions.
The present chapter is complementary to these reviews and concentrates on spontaneous
magnetoelastic effects caused by the Gd-Gd magnetic exchange interaction in non-cubic
systems. It should contribute to a more complete picture of magnetoelastic effects.
The chapter is organized as follows: section 2 gives a short account of the most important
experimental methods used for the measurement of magnetically induced effects on the
crystal structure. The current state concerning the microscopic theory of magnetoelastic
effects in Gd systems is reviewed in section 3. Then some selected results for cubic
systems are presented, showing that not only symmetry conserving effects (section 4:
magnetovolume effects) are possible, but also very small distortions of the symmetry
(section 5). Then follows in section 6 to 9 the main part of the chapter, namely a review of
SPONTANEOUSMAGNETOELASTIC EFFECTS IN GADOLINIUMCOMPOUNDS 3II
spontaneous magnetoelastic effects in non-cubic systems from hexagonal to monoclinic,

showing a wide variety of anisotropic (but symmetry conserving) effects, as well as
magnetovolume effects. Finally, all the presented results are summarized and discussed
in section 10.
2. Experimental methods
X-ray diffraction at variable temperatures, on the one hand, and thermal expansion
measurements using dilatometric methods, on the other hand, are the two most important
experimental methods for measuring spontaneous magnetoelastic effects. The main
advantage of the x-ray diffraction method lies in the direct measurement of the lattice
parameters, allowing the determination of anisotropic effects also in polycrystalline
samples. Especially distortions of the crystal symmetry can easily be detected by this
method. However, the resolution of x-ray diffraction is much smaller than that of
dilatometry using the capacitance or interferometric method. When good and well oriented
single crystals are available, the dilatometric method is very reliable and much more
sensitive than x-ray diffraction in measuring isotropic effects (volume effects) as well
as anisotropic effects. However, the detection of spontaneous distortions of the crystal
symmetry is difficult when using dilatometric methods. A review of the most common
types of capacitance dilatometers was given by Rotter et al, (1998). Depending on the
temperature a resolution of /:}.[/ [ from 10- 10 to 10-9 is possible. The resolution of the
x-ray diffraction method is only about 10-5 to 10-4 , i.e. when no effects are visible in
the x-ray results, this means only that the effects are smaller than the latter values. The
high sensitivity makes the capacitance method one of the best tools for detecting phase
transitions. But due to thermal hysteresis effects in the dilatometer materials absolute
measurements of length differences for large temperature intervals are less reliable than
with the x-ray method. In addition, in many cases the intrinsic strains differ from the length
changes measured on a macroscopic sample, due to grain boundaries, microstresses and
lattice defects. For a very detailed review of all experimental methods used for thermal
expansion measurements in solids the reader is referred to Taylor et al. (1998).
3. Microscopic Theory of Magnetoelastic Effects in Gd compounds
In order to analyze spontaneous magnetoelastic effects quantitatively it is first necessary

to separate the magnetic contributions to the thermal expansion (i.e. the magnetostrictive
strains) from the lattice contribution. This is usually done by comparison with a
nonmagnetic isostructural reference compound or by extrapolating the temperature
variation of the lattice parameters from the paramagnetic range by assuming a simple
Debye model for the lattice contribution (see e.g. Barron et al, (1980». Because in most of
the cases presented in this chapter the latter method has been applied, we give a short
account. According to Gruneisen rules, and assuming a quasiharmonic approximation
together with a simple Debye model for the phonons and a classical y T electronic specific
312 A. LINDBAUM and M. ROITER
heat contribution, the following formula for the nonmagnetic contribution to the thermal
expansion can be derived (see e.g. Lindbaum (1994)):
(I)
with
(2)
Here K I, K2 and the Debye temperature eD are parameters which can be obtained
by fitting (I) and (2) to the thermal expansion in the paramagnetic temperature range.
The electronic contribution in (I), Eel = K I T 2 • is usually much smaller than the lattice
contribution Ephon. i.e. in most cases it makes no difference when only Ephon is taken into
account for determining the nonmagnetic contribution to the thermal expansion.
We now turn to the main issue of this paragraph. Usually the magnetostriction of solids
is analyzed within the framework of a phenomenological model which takes account of the
crystal symmetry (Clark 1980). Whereas this serves for practical purposes it is not possible
to derive expressions for the temperature and magnetic field dependence of the strains.
For such an analysis it is necessary to develop a microscopic theory of magnetoelastic
effects. Whereas a lot of results have been derived for the single ion magnetoelastic
effects (for an overview see Morin and Schmitt 1990), much less attention has been paid
to the effect of exchange interactions. However, already in the 60's the influence of the
exchange interactions on the microscopic magnetoelastic properties have been discussed
for ferromagnets and cubic crystals (Callen 1968; Clark et al. 1965; Callen and Callen
1963). Single ion and isotropic exchange contributions to the magnetostriction have been
analyzed theoretically by Callen and Callen (1965) and it was shown how to obtain explicit
expressions for the magnetostriction in different symmetries.
In the following short review of the microscopic theory of magnetoelastic effects caused
by the exchange interactions we follow Morin and Schmitt (1990) and generalize it to the
case of arbitrary magnetic structures and give general expressions valid for any crystal
symmetry. We will neglect the influence of the crystal field. The analysis is restricted
to first order effects assuming that the magnetoelastic energy is small compared to the
magnetic exchange energy. Furthermore any dynamical coupling between the lattice and
the magnetic exchange (magnon-phonon interaction) will be neglected and we consider
only the long wavelength static limit.
The analysis is based on the bilinear two ion exchange interaction J. ..J(ij)J) between
the total angular momenta J of rare earth atoms on the sites i and j. This exchange
interaction shows an anisotropy. which in the case of Gd compounds is expected to be
small and mainly due to the classical dipole interaction (Jensen and Mackintosh 1991).
The exchange parameters ..J(ij) of the exchange Hamiltonian depend on the position of the
atoms in the crystal-leading to magnetoelastic interactions (Morin and Schmitt 1990). It
is possible to calculate the magnetostrictive strains E U , if we assume, that the Hamiltonian
SPONTANEOUSMAGNETOELASTICEFFECTS IN GADOLINIUM COMPOUNDS 313
may be written as a sum of exchange, Zeeman and elastic contributions.
H = Hex + Hze + Eel, (3)
Hex = -~ L Ji 3(ij, E)Jj, (4)

i.j(i¥J)
(5)
a fJ
Eel = -I,",
L.JCafJE E . (6)
2 afJ
Note that for the components E a of the strain tensor E and for the elastic constants cafJ
Voigt's abbreviated notation is adopted (i.e, ex = 1,2,3,4,5,6 denote 11,22,33, 12, 13,23
respectively) - see e.g. Barron et aI. (1980).
Starting point is the Taylor expansion of the magnetic exchange parameters with
respect to the components of the strain tensor E, leading to the so-called magnetoelastic
Hamiltonian.
-~ LJi 3(ij, E)Jj ~ -~ LJi 3(ij, E= O)Jj

ij ij
I a =
- 2" LEaJi J(aj(ij)Jj + ... (7)
ij
with
~
J(a)
(..)_ [a JUj,a E)]
I) - . (8)
aE £=0
Usually the analysis is limited to the first order in the strain (harmonic approximation)
and second order terms (anharmonic coupling) are neglected. This second order magneto-
elasticity has not been analyzed for the compounds under consideration.
By definition the Gibbs free energy is given by
F = -kBTlnZ (9)
with the partition sum
(10)
Here kB denotes the Boltzmann constant. In our first order approach the trace in (10) is
calculated using the states of the unperturbed system, i.e. without taking into account the
magnetoelastic interactions, by putting E= 0 in (3)-(6). In practice, these eigenstates of the
314 A. LlNDBAUM and M. norrsn
unperturbed system may be calculated by a mean field approach (Jensen and Mackintosh
1991; Rotter et al. 2001b).
We now insert the Hamiltonian 11. into (9) and (10) and minimize the free energy F with
respect to the strains E a by putting zero the derivative
(11)
Using the elastic compliances saf3 which are related to the elastic constants by (see e.g.
Barron 1998)
6
L Cf3 ysya = Oaf3, (12)
y=1
equation (11) yields the final result
a _ I " , af3(J . .J= (. ')J .)

E ~s-"2 , (f3) IJ J T.W (13)
f3.ij
Equation (13) shows that the complete temperature and field dependence of the strains
can be calculated from static correlation functions (Jt J r)T."
(y, y' = 1, 2, 3 label the
cartesian components of the angular momentum J) where () r.n denote thermal expectation
values (Callen and Callen 1965). As already mentioned above, a mean field theory may be
used to evaluate (13) and calculate the magnetostriction.
In some cases it is more convenient to Fourier transform this expression (13):
a f3 (
E
a
="21 ~s
'" =
L q J(P)(q)Jq }
T." (14)
f3.q
with the definitions
Ji = LJqexp(-iqRj ) , (15)
q
3(f3) (ij) = L 3(f3) (q)exp[-iq(Ri - Rj)]' (16)

q
In the case, that the magnetoelastic interaction is dominated by the isotropic contribution
(i.e. ] (f3) reduces to a scalar .1<(3)' coming from the strain dependence of the Heisenberg
interaction (compare the analysis of GdCU2 in section 8.6), equations (13) and (14) reduce
to
(17)
SPONTANEOUS MAGNETOELASTICEFFECTS IN GADOLINIUM COMPOUNDS 315
€a = ~ :E(~::>a/l J(/lj(q») (J-qJq)T,H' (18)

q /l
In principle the correlation functions OT,H in expressions (14) and (18) can be evaluated,
if the Fourier transform of the magnetic moments is known (for instance from neutron
diffraction experiments). Re-inserting (14) or (18) into the magnetoelastic interaction (7)
results in higher order terms of magnetic interactions, which we have neglected in our
discussion. Although not analyzed in detail by theory, experimental data gives some clear
indication of the importance of higher order terms in the Hamiltonian of Gd compounds in
both, the strains €a and the momenta Ji. A compound near a structural instability such as
the Gd5(SixGel-x)4 system can only be described by considering higher order terms in the
elastic energy. Kobler et a1. (1998, 1999a) have pointed out the importance of fourth order
exchange interactions in compounds with pure spin magnetism (i.e, biquadratic, three spin
and four spin interactions) such as GdMg and GdAg.
Additional comment deserve magnetostriction measurements near the ordering temper-
ature Tc reflecting critical phenomena. Few data for critical expansion is available, such as
have been reported by Dolejsi and Swenson (1981) for the case of Gd metal. The thermal
expansion coefficient in the critical region should assume the form I(T - Tc)/ Tci- a . The
critical exponent ex should be the same as for the specific heat and depend only on the
universality class (dimensionality, No. of degrees of freedom) of the system. For Gd metal
this universality class has been determined by Frey et a1. (1997).
A last point which has to be discussed are the magnetovolume effects caused by
magnetic moments in the conduction band or of the d-electrons of partner elements like Ni.
A simple model, based on the Stoner model for itinerant magnetism, shows that the kinetic
energy increase associated with magnetic ordering in a band leads to a magnetic pressure
PM, which can be expressed by the following formula (Janak and Williams 1976):
(19)
where D, V and M denote the electronic density of states at the Fermi energy, the
volume and the magnetic moment, respectively. Since the density of states increases with
increasing volume (i.e. ~:~ ~ > 0), the magnetic pressure PM is positive, leading to a
magnetically induced increase of the volume.
With this outlook on topics of current research we conclude the theoretical part of this
chapter and turn to the discussion of available experimental data.
4. Magnetovolume effects in cubic systems
In this section some examples for spontaneous magnetovolume effects in cubic Gd based
compounds will be presented. As will be discussed in section 5, in cubic systems also
distortions of the crystal symmetry have been observed. In all cases of our knowledge
these distortions are, however, very small compared to strains which conserve the crystal
symmetry and which will be the main topic of the rest of this chapter. The symmetry
breaking effects are so small that they probably can only be observed in the highly
symmetric cubic systems, where the detection of such distortions is easier.
316 A. LINDBAUM and M. norrsn
4.1. GdAlz
GdAh crystallizes in the pure CIS structure (cubic Laves phase, MgCuz type, space group
F d3m) without vacancies on the Gd sites, which lead to a superstructure of C 15 in case of
GdNiz (see section 4.2).
The magnetic properties of the RAh compounds have been extensively investigated in
the past. Within this series, GdAlz has the highest Curie temperature (Tc ~ 168 K) and is
considered as a good example of a Heisenberg ferromagnet (du Tremolet de Lacheisserie
1988; Taylor and Coles 1975). Neutron diffraction experiments at 4.2 K gave a rather small
magnetic moment on the Gd sites (6.6 /LB) with a 0.6 /LB moment in the conduction band
(Abell et al. 1983). The magnetic anisotropy is very small (as expected for an S-state ion)
and both NMR data (Kaplan et al. 1973) and torque measurements (Burd and Lee 1977)
indicate [Ill] as the easy magnetization direction.
Measurements of the thermal expansion using a strain gauge method (Pourarian
1980) showed a negative magnetovolume effect, in agreement with measurements of
du Tremolet de Lacheisserie (1988) using a tube type dilatometer. However there are
discrepancies concerning the size of the effect: du Tremolet de Lacheisserie (1988)
obtained a 0 K value of (~ V / V)mag ~ -1.16 x 10- 3 , which is twice as large as the value
ofPourarian (1980). Our own x-ray powder diffraction measurements (see fig. I) show also
a negative magnetovolume effect, with a 0 K value of (~ V / V)mag ~ -1.4 x 10- 3 , in good
agreement with du Trernolet de Lacheisserie (1988). This large negative magnetovolume
effect is very interesting and has to be attributed solely to the volume dependence of the
(indirect) Gd-Gd exchange interaction, since the induced itinerant magnetic moment in the
conduction band should lead to a positive magnetovolume effect. The x-ray diffraction
experiments revealed no detectable line splitting or broadening, showing that there is
no change of the cubic symmetry within the detection limit of about 1 x 10-4 . From
7.905
GdAI 2
7.900
7.895
-<
(ij'
7.890
•••
•
•
7.885 ••
••
••• •••
7.880
0 50 100 150 200 250 300
T[K]
Fig. I. Temperature variation of the cubic lattice parameter of GdAlz measured by x-ray powder diffraction
(this work). The small points connected by a line indicate the corresponding values of the isostructural YAlz
(nonmagnetic reference), scaled to coincide with GdAIZ at Z50K. in order to allow a direct comparison.
SPONTANEOUS MAGNETOELASTIC EFFECTS IN GADOLINIUM COMPOUNDS 317
forced magnetostriction experiments on a single crystal, also reported by du Tremolet de

Lacheisserie (1988), a very small spontaneous trigonal distortion of about (AL/ L)II J ~
2 x 10-5 could be deduced.
4.2. GdNiz
During the past decades (and frequently up to now) the RNiz compounds (R: rare earth
element) have been reported to crystallize in the cubic Laves phase structure (CI5).
However, experimental as well as theoretical investigations showed that this is not true.
Instead of showing the pure C 15 structure, most of them (including GdNiz) crystallize in
a cubic superstructure of C15 with doubled lattice parameter due to ordered vacancies on
the R sites. A single phase compound can only be obtained with the stoichiometry (1 - 8):2
and can be described within space group F43m with the 4a sites only partially occupied
by the R atoms. The occupancy of the R 4a sites increases with decreasing radius of the R
atom and reaches 1 for LuNiz (Latroche et al. 1990; Latroche et al. 1993). This instability
of the pure C15 structure in the RNiz compounds (i.e, the tendency towards the formation
of vacancies) can be understood by space filling arguments. Theoretical investigations,
based on ab-initio total energy calculations, showed that the vacancies at the R sites reduce
the total energy, thus increasing the stability relative to the neighboring compounds in
the R-Ni phase diagram (Lindbaum et al. 1999). The existence of ordered R-vacancies
in the RNiz compounds is not only important for the understanding of the mechanisms
stabilizing the crystal structure. They must also be taken into account when investigating
other physical properties, like e.g. the magnetic structure. The ordered vacancies change
the local environment of the R sites, leading to a symmetry change of the crystal field
as well as the magnetic exchange interactions. As an example, investigations on TbNiz
showed that the ordered vacancies on the Tb sites are responsible for a temperature induced
change of the magnetic structure at 14 K (Gratz et al. 1999a). An interesting property
of the RNiz superstructures is a reversible temperature induced transition from ordered
to disordered vacancies at high temperatures, first detected by anomalies in the transport
properties and later directly observed by x-ray diffraction experiments (Gratz et al. 1996).
Furthermore, high-pressure x-ray diffraction studies showed that there is also a pressure-
induced order-disorder transition (Lindbaum et al. 2002).
The magnetic properties of GdNiz have been largely investigated in the past (see e.g.
Buschow 1977; Jesser and Clad 1986). It orders ferromagnetic ally below Tc ~ 74 K and
shows a weak Ni 3d polarization opposite to the 4f Gd moments. This weak itinerant
Ni moment is a possible reason for the observed positive magnetovolume effect, which
has been measured by low temperature x-ray powder diffraction (see fig. 2), reaching a
value of (A V / V)mag ~ 0.6 x 10-3 at 0 K (estimated by comparison with the nonmagnetic
reference compound YNiz). No line splitting or broadening of the x-ray lines could be
observed below the magnetic ordering temperature. This means that a possible distortion
of the cubic symmetry is smaller than 1 x 10- 4 .
4.3. ca«,
The RIn3 systems crystallize in the cubic AuCu3 type of structure and are known for salient
features as valence fluctuations and the presence of various magnetic structures (see e.g.
318
Fig. 2. Temperature variation of the cubic lattice parameter of the CI5 superstructure of GdNi2 measured by
x-ray powder diffraction (this work). The small points connected by a line indicate the corresponding values of
the isostructural YNi2 (nonmagnetic reference), scaled to coincide with GdNi2 at 150 K, in order to allow a direct
comparison.
Lin et a1. 1996 and references therein). GdIn3 is antiferromagnetic with a Neel temperature
TN of about 43 K. Magnetization measurements on a single crystal by Staliriski et a1. (1979)
showed, that the Neel temperature varies with the crystallographic axis along which the
magnetic field is applied reaching the highest value along [100]. This observed variation of
TN suggests that the magnetic structure is a spiral antiferromagnetic one (Nagamiya 1967).
Grechnev et a1. (1995) investigated the effect of pressure on the magnetic susceptibility
of RIn3 compounds and performed also ab-initio calculations of the volume derivatives
of the band structure and the exchange parameters. Their study supports the view that the
RKKY-type R-R interaction is mainly mediated by the s- and p-electrons.
Figure 3 shows the variation of the cubic lattice parameter, measured by x-ray powder
diffraction. As can be seen, there is no volume effect or only a small negative one with an
absolute value at 0 K smaller than 0.3 x 10- 3.
4.4. GdCu2In and GdPdzln

Further examples of cubic systems with very weak negative magnetovolume effects are
GdCu2In and GdPd2In, both crystallizing in the cubic Heusler structure L21 (Webster
1969). Both compounds order antiferromagnetically below about 10 K with some
complicated and up to now unknown magnetic structure (see e.g. Parsons et a1. 1998;
Taylor et a1. 2000 and references therein). Specific heat measurements on both compounds
show very similar results for the magnetic contributions (Parsons et a1. 1998), but the
corresponding effect on the crystal volume is 5 times larger in GdCuzIn (measured by
Taylor et a1. 2000 on polycrystalline samples using a capacitance dilatometer). However,
the estimated value of the magnetovolume effect at 0 K is very small in both. It is
(~V / V)mag ~ -10 x 10-5 for GdCu2In and (~V / V)mag ~ -2 x 10-5 for GdPd2In.
4.610
4.605 Gdln 3
4.600
~
C':l
4.595
4.590
4.585
0 50 100 150 200 250 300
T [K]
Fig. 3. Temperature variation of the cubic lattice parameter of GdIn3 measured by x-ray powder diffraction (this
work). The full line corresponds to a fit of a Debye model to the whole temparature range, the dashed line shows
an extrapolation from the paramagnetic range obtained from fitting the Debye function only to the data points
above TN.
5. Spontaneous distortions of the crystal symmetry
Unfortunately, symmetry distortions have not been widely investigated in Gd compounds,

because they are usually very small and therefore experiments are difficult. Some old data
is available for cubic compounds. Isotropic exchange interactions which stay isotropic
also under a strain such as Heisenberg and RKKY type do not lead to spontaneous
symmetry distortions in ferromagnetic cubic systems (Morin and Schmitt 1990). However,
such distortions have been (indirectly) found in ferromagnetic systems from forced
magnetostriction measurements on single crystals (e.g. a spontaneous tetragonal distortion
(6.//1)00 I :::::: -3.7 X 10- 4 in GdZn by Rouchy et al. (1981), and a small spontaneous
trigonal distortion (6..1/1)/11:::::: 2 x 10-5 in GdAlz by du Tremoletde Lacheisserie (1988».
These distortions have to be attributed to the presence of anisotropic exchange interactions
in these ferromagnetic compounds, but the origin of the exchange anisotropy has not yet
been clarified.
In contrast to the cubic ferromagnets, in cubic antiferromagnets also isotropic exchange
may lead to symmetry distortions, as for instance the small trigonal distortions in the
antiferromagnetic compounds GdAs, GdSb and GdBi, ranging from 10-5 to 10- 4 , which
were directly measured by x-ray diffraction experiments by Hulliger and Stucki (1978).
Diffraction in external fields would be necessary to show unambiguously if in these
antiferromagnets the distortion is due to isotropic or anisotropic exchange interactions. The
source of exchange anisotropy in Gd compounds is still topic of current investigations and
in special cases, such as symmetry distortions of the cubic ferromagnets, measurements of
magnetoelastic properties can make important contributions to this problem.
320 A. LINDBAUM and M. R01TER
6. Hexagonal systems
6.1. Gadolinium
Pure gadolinium crystallizes in the well known hexagonal close-packed (hcp) structure
(see fig. 4), which is described within the space group P63/mmc with Gd on the 2c-sites
(point symmetry 6m2).
Gadolinium has the highest magnetic ordering temperature among all rare earth
elements. The magnetic properties of Gd metal have been extensively studied (see e.g.
McEwen (1978) and Dan'kov et al. (1998) and references therein). It shows ferromagnetic
ordering below Te = 294 K and remains ferromagnetic down to liquid helium temperature.
The saturation moment is 7.55 JLB per atom (Nigh et al. 1963), i.e. there is an additional
moment of 0.55 JLB compared to the 7 JLB corresponding to a local 4f moment with
S = 7/2. This additional moment is usually attributed to a conduction-electron polarization
(see e.g. Cable and Wollan (1968». The paramagnetic to ferromagnetic transition at Te is
of second order type and the universality class has been determined by Frey et al. (1997).
Neutron diffraction experiments performed by Cable and Wollan (1968) showed that from
Te down to the spin reorientation temperature TSR ~ 232 K the moments are aligned along
the hexagonal axis (i.e. c-direction). Below TSR the moment direction departs from this
direction and the angle between the hexagonal axis and the moment direction changes with
temperature. Here it is worthwhile to mention that the magnetic properties of gadolinium
are up to now a puzzle. In a Nature paper, Coey et al. (1999) reported that gadolinium
is probably not really a ferromagnet between TSR and Te, but that the magnetic structure
is some long-period modulated structure, similar to the incommensurate order found in
erbium. This conclusion has been drawn from susceptibility measurements around Te and
TSR, but experiments for observing the long-period modulation are still missing. More
recent susceptibility and low field magnetization measurements performed by Kaul and
Srinath (2000) confirm again the widely accepted view that gadolinium is a collinear
ferromagnet between Te and TSR.
The thermal expansion of gadolinium has been studied several times (for a collection of
data see e.g. Touloukian et al. (1976». Since there is some disagreement mainly concerning
the temperature variation of the lattice parameter a, we remeasured the anisotropic thermal
Gd (2c)
Fig. 4. hcp structure of gadolinium.
expansion of a polycrystalline Gd sample by means of x-ray diffraction between 10 K

and 400 K. The result is shown in fig. 5. As can be seen from the temperature variation
of a and c there is a pronounced anisotropic magnetic contribution below Tc: The
estimated values at 0 K of the magnetic contribution are (6.a/a)mag ::;:;: 1.0 x 10- 3 and
(6.c/c)mag::;:;: 3.0 x 10-3 • This leads to a clearly visible magnetically induced change of
the cia ratio of (6.(c/a)/(c/a))mag::;:;: 2.0 x 10- 3 • However, what is much more peculiar
is the big magnetovolume effect with a 0 K value of (6. V / V) mag ::;:;: 5.0 x 10- 3 . The
size of this magnetovolume effect is comparable to R-Fe or R-Co compounds, like for
Gadolinium
:lI:
~..,
~
8 0.002
T
SR
+
:..: 0.000
.8.,
'" I
-0.002
'":..:
'-'
..,8 0.002 • • • • •••••••••• ••••

~ •
~
:.: 0.000 •
8
<".
C,)
C,)
I -0.002
'-'
1.600
• •• • ••••• •• a••
'"
....... 1.596 ••••
C,)
••
1.592
:..: 0.004
~
<
~
:.: 0.000 ·.. ..- ••••••••
.8.,
;> -0.004
I
;>
'-' 0.006
••
•• •••••••••• •
~ 0.004 • ••
~
<
;>
0.000
0.002 •
.~
<l ••••••••••
"-'
0 50 100 150 200 250 300 350 400

T [K]
Fig. 5. Temperature variation of the hexagonal lattice parameters and of the volume of pure gadolinium measured
by x-ray powder diffraction (this work). The values have been normalized to 300 K in order to show the
relative changes. (The values at 300 K are a = 3.632 ± 0.002 A. c = 5.782 ± 0.002 A.) The lines represent
the extrapolation of the lattice contribution from temperatures above TC assuming a Debye temperature of 184 K
(Bodriakov et aI. 1998). The lowest part of the figure shows the magnetovolume effect, obtained by subtracting
the lattice contribution from the volume expansion.
322 A. LINDBAUM and M. RUITER
Ni (3g)
Fig. 6. CaCuS -type hexagonal crystal structure of GdNis.
instance RFe2 and RC02, where the large magnetovolume effects of about 2 to 9 X 10- 3
are attributed to the itinerant character of the magnetic moments of Co or Fe (see e.g.
the review by Andreev (1995), p. 68). The volume effects caused by localized magnetic
moments are usually one order of magnitude smaller. A possible reason for the unexpected
large positive magnetovolume effect in gadolinium is the large induced itinerant magnetic
moment of about 0.55 /LB in the conduction band (see above).
6.2. GdNi'j
Intermetallic compounds of the general composition AB'j have been extensively investi-
gated as possible hydrogen storage media. Because of the ability of LaNi'j to absorb large
amounts of hydrogen (up to 6.7 atoms per formula unit - see van Vucht et al. (1970»
also GdNi'j-based systems have been investigated with respect to their hydrogen sorption
properties (see e.g. Blazina et al. (1999) and Bobet et al. (1998».
GdNis crystallizes in the well known hexagonal CaCus type (space group P6/mmm).
As shown in fig. 6, the structure is built up of two types of basal plane layers alternating
along the c-axis, one at z = 0 composed of Gd (la-sites with high point symmetry
6/mmm) and Ni (2c-sites), the other one at z = 1/2 only composed ofNi atoms (3g-sites).
The magnetic properties of GdNis have been intensively studied in the past and are
now well understood (Franse and Radwariski 1993; Mulders et al. 2000). The magnetic
interaction is strong compared to the other RNis compounds (de Gennes scaling) with an
ordering temperature of Te ~ 31 K. GdNis is a ferrimagnet with ferromagnetically ordered
Gd moments of 7 /LB aligned parallel to the hexagonal axis. These Gd moments induce
an antiparallel moment of 0.16 /LB on the Ni atoms. There is a weak magnetic anisotropy
caused by the dipolar interaction between the Gd moments (Yaouanc et al. 1996). In the
past GdNi'j has also been used as a testing ground for validating muon spin relaxation
theories in magnetic materials (de Reotier and Yaouanc 1997).
No spontaneous magnetostriction could be detected within the sensitivity of the x-ray
diffraction experiments. As can be seen in fig. 7 there is no significant difference in the
temperature dependence of the lattice parameters between GdNis and the nonmagnetic
isostructural YNis. The reason for the vanishing or very small (i.e. < 10- 4 ) effects in
this compound could be that only one atom among six is a Gd atom, leading to weak
magnetic and magnetoelastic interactions. A further example for a compound with a low
concentration of Gd atoms, also showing weak or vanishing effects, is the tetragonal
GdNi2B2C (see section 7.3).
SPONTANEOUSMAGNETOELASTICEfFECTS IN GADOLINIUM COMPOUNDS 323
~
~
4.905
4.900 {c
4.895
3.970
0«
o 3.965
,,~.~~ --
~810. • •••••••••••••••••••••••
0.808 - - I I I I I _
82.6
M
~> 82.4
82.2 ~~~~L-_--.J_----'-' 1_ _
o 50 100 150 200 250 300

TrKj
Fig. 7. Anisotropic thermal expansion of GdNiS measured by x-ray powder diffraction (this work). The lines
indicate the corresponding values of the isostructural YNis (nonmagnetic reference), scaled to coincide with
GdNis at 150 K for allowing a direct comparison (the da ratio has not been scaled).
6.3. Gdz/n
Gd-In crystallizes in the hexagonal Ni-In-type structure (space gr. P63/mmc), which
has two crystallographically different sites for Gd (Palenzona 1968). The unit cell of the
structure is shown in fig. 8. As can be seen from this figure the structure is composed of
hexagonal layers with the stacking sequence ABACA. The A layers at z == 0 and z = 1/2
contain only Gd atoms on the cell comers (2a-sites with quasi-cubic point symmetry 3m).
The Band C layers at z = 1/4 and z = 3/4 contain each one Gd atom (2d-sites with
hexagonal point symmetry 6m2) and one In atom (2c-sites, also 6m2). Interestingly, the
Gd sublattice forms a double hexagonal close packed structure (dhcp), which differs only
by the stacking sequence of the hexagonal planes from a hcp structure formed by elemental
gadolinium (see section 6.1). However, the distances of the Gd atoms are very different.
The Gd-Gd distance within the hexagonal planes is much larger in Gd-In (0 ~ 3.63 Afor
gadolinium and 0 ~ 5.41 Afor GdjIn), whereas the distances in direction of the hexagonal
axis are much smaller (gadolinium: c ~ 5.78 A, Gdjln: c/2 ~ 3.38 A).
The magnetic properties of Gd-In show interesting features: it becomes ferromagnetic
below 190 K, but there is a second magnetic transition at about 100 K to an antiferro-
magnetic structure. Under a magnetic field this metamagnetic transition is shifted to lower
temperatures and fields of about 1 Tesla can completely restore the ferromagnetic state
(McAlister 1984; Gamari-Seale et al. 1979; lee et al. 1996). lee et al. (1996) reported that
324 A. LINDBAUM and M. RUITER
Gd (2d)
/
Gd (2a) In (2c)
Fig. 8. Nij In-type hexagonal crystal structure of Gd2In.
the temperature- and magnetic field dependence of the magnetization shows that the sys-
tem is not a simple ferromagnet between 100 and 190 K, but a helical ferromagnet. McAl-
ister (1984) reported that magnetization, resistivity and magnetoresistivity measurements
support the suggestion that the low temperature structure below 100 K could be a spiral
antiferromagnetic structure. Measurements of the magnetization and magnetoresistance in
the vicinity of the metamagnetic transition support that the low temperature structure is
different from simple antiferromagnetic (Stampe et al. 1997). Ravot et al. (1993) reported
a propagation vector (0, 0, ~ i), obtained by neutron powder diffraction experiments at
20K.
As can be seen in fig. 9 there is no spontaneous magnetostriction effect within the
sensitivity of the x-ray diffraction experiments (~ 1 x 10-4 ) at both magnetic transition
temperatures of 190 K and 100 K, respectively. This is interesting and unexpected, since
this compound is characterized by a strong Gd-Gd magnetic interaction, leading to the
relatively high magnetic ordering temperature of 190 K. Despite this strong magnetic
exchange interaction the cia ratio as well as the volume are absolutely unaffected by the
ordering of the Gd moments. Note that GdzIn has the second highest magnetic ordering
temperature of all systems reviewed in the present chapter after pure Gd metal (see
section 6.1), which shows pronounced anisotropic spontaneous magnetoelastic effects as
well as a large positive magnetovolume effect. Further studies including field-induced
magnetostriction experiments on single crystals are necessary in order to clarify why there
is no pronounced spontaneous magnetostriction detectable in Gd-In.
6.4. GdCuAl and GdNiAl

The RCuAI (R = rare earth except for La and Eu) compounds belong to a large group
of ternary intermetallics showing the ZrNiAl-type hexagonal structure with space group
P62m (Szytula 1991). All the R atoms occupy equivalent positions (3g sites) with point
symmetry mm only. The structure is built up of two types of basal plane layers (with and
without R atoms) alternating along the c-axis (see fig. 10).
While the magnetic properties of the compounds with light R atoms are rather
complex, ferromagnetic ordering has been deduced from magnetization measurements on
polycrystalline samples for Gd and the other heavy R atoms. In the case of GdCuAI the
Gd 2In
5.42
........ 5.41
<>«
......
~
5.40
('
5.39
6.75
........
<>«
...... 6.74
o
6.73
1.248
~
....... 1.247
u
1.246
171
............
<>«
......
> 170
169
0 50 100 150 200 250 300
T [K]
Fig. 9. Anisotropic thermal expansion of Gdj ln measured by x-ray powder diffraction (Gratz and Lindbaum
1998). The lines are the result of filling Debye functions. The arrows indicate the two magnetic transitions at
190 K and 100 K (see text).
magnetic ordering temperature is Tc ~ 82 K. Javorsky et aI. (1998) reported a second

magnetic transition at TR ~ 37 K observed in specific heat and susceptibility data. Powder
x-ray diffraction experiments with an external magnetic field performed by Andreev et al.
(1999) (for a description of the method see e.g. Gratz et aI. (1999b» showed that in GdCuAI
the magnetic moments are aligned along the c-axis below Tc as well as below the second
magnetic transition at TR.
Measurements of the temperature dependence of the hexagonal lattice parameters using
low-temperature x-ray powder diffraction (Andreev et aI. 1999) show clear anomalies
below the magnetic ordering temperature (82 K) in both the aCT) and c(T) curves
(see fig. II). An estimation of the spontaneous magnetostriction by extrapolating from
the paramagnetic range to low temperatures shows a monotonous increase of the
magnetostriction which reaches quite large values at 0 K «~ala)mag = -1.7 x 10-3
and (~clc)mag 3
= 3.0 x 10- ) . This leads to a pronounced change in the cia ratio of
(~(cla)/(cla»mag ~ 4.7 x 10- 3 , but only to a small volume effect «~ VIV)mag ~
Cu (lb)
Fig. 10. ZrNiAl-type hexagonal crystal structure of RCuAI.
2(!:i.a/a)mag + (!:i.C/C)mag = -0.4 10- 3 ) , which is near the size of the experimental
X
error. There was no measurable effect at the second magnetic transition at 37 K which has
been observed by Javorsky et al. (1998).
GdNiAI crystallizes like GdCuAI in the hexagonal ZrNiAI-type structure, but a
pronounced anomaly in the hexagonal lattice parameters at about 200 K has been observed
and attributed to a transition between two slightly different forms of the ZrNiAI-type
structure (Merlo et al. 1998). The atomic position parameters XGd ~ 0.583 and XAI ~ 0.232,
which are not fixed by space group symmetry, do not change significantly at this structural
transition (Jarosz et al. 2000).
As reported by Merlo et al. (1998) and Javorsky et al. (1995), GdNiAI orders
ferromagnetically below about 60 K, and two other magnetic transitions occur at 30 and
14 K. which are probably due to the occurrence of antiferromagnetic order, but no further
information concerning the easy axis in the ferromagnetic state and the magnetic structures
below the two additional transitions could be found in literature. However, as reported by
Merlo et al. (1998), a further magnetic transition has been observed in this compound in the
paramagnetic range at about 180 K. Above this temperature the paramagnetic moment of
Gd (obtained from a Curie-Weiss fit of susceptibility data) agrees with the calculated free
ion value, but below a 9% higher value has been found. Merlo et al. (1998) suggest that
this transition could be connected with the structural transformation at about 200 K, and
that below this transition the slightly different interatomic distances could be responsible
for a larger polarization of the conduction electrons.
The temperature variation of the lattice parameters, as measured by x-ray diffraction by
Merlo et al. (1998) and Jarosz et al. (2000), shows no significant anisotropic spontaneous
GdCuAI
7.08 4.09
7.06 4.08
~ 7.04 4.07 :<

~
~ (J
7.02 4.06
4.05
0.580
00
,
0 176
0.578 cia 0
0
~
....
~
(J 175 ~
0.576 >
174
0.574
0 100 200 300
T [K]
Fig. II. Anisotropic thermal expansion of GdCuAI measured by x-ray powder diffraction (Andreev et a1. 1999).
The lines are extrapolations from the paramagnetic range. TC and TR indicate the magnetic ordering temperature
and the second magnetic transition observed by Javorsky et a1. (1998), respectively.
magnetostriction, neither due to the ferromagnetic ordering between about 60 K and 30 K

nor due to the two additional magnetic transitions at 30 and 14 K. This is in contrast to
the behaviour of GdCuAI (see fig. II), where a pronounced change of the cia ratio due
to the magnetic ordering has been observed. But note that there is a clear positive volume
anomaly with an estimated 0 K value of about (~ V I V)mag ~ 0.8 x 10- 3 in GdNiAI (Jarosz
et al. 2(00). This positive volume effect, which does not exist in GdCuAI, may be due to
an induced itinerant magnetic moment at the Ni sites. In general the above comparison
of the isostructural GdNiAI and GdCuAI shows that the magnetoelastic effects can be
strongly influenced by the partner elements of Gd, i.e. exchanging Cu by Ni can change
the behaviour completely.
6.5. GdCuSn
GdCuSn crystallizes in the hexagonal NdPtSb-type structure (Pacheco et al. 1998), which
is an ordered form of the CaIn2 type, which had been reported as the structure of GdCuSn
before (Komarovskaja et al. 1983). The correct structure of GdCuSn is described within
the space group P63mc with Gd on the 2a-sites (point symmetry 3m), Cu on the 2b-sites
(also point symmetry 3m) with ZCu ~ 0.81 and Sn also on the 2b-sites with ZSn ~ 0.23.
The hexagonal unit cell of the structure is shown in fig. 12.
328 A. LINDBAUM and M. norrsa
Sn (2b)
ell (2b)
Gd (2a)
Fig. 12. NdPtSb-type hexagonal crystal structure of GdCuSn.
Fig. 13. Possible magnetic structure of GdCuSn (Bialic et al. 1997).
Already in 1977 bulk magnetic measurements showed that GdCuSn orders antiferro-
magnetically below about 24 K (Oesterreicher 1977). Only a few years ago conclusions
about the magnetic structure were drawn from Mossbauer experiments by analyzing the
Gd and Sn resonance spectra (Bialic et al. 1997). The authors of this work suggest a mag-
netic structure described by the propagation vector (0, !'
0) with antiferromagnetic order
within the hexagonal Gd planes and ferromagnetic stacking along the c axis. Figure 13
shows this magnetic structure schematically.
Figure 14 shows the temperature dependence of the lattice parameters as well as of the
volume of GdCuSn measured by low temperature x-ray diffraction. As can be seen there is
a significant spontaneous anisotropic magnetostriction effect due to the magnetic ordering.
An estimation of the magnetic contribution to the thermal expansion of GdCuSn at 0 K by
extrapolating from the paramagnetic range down to lowest temperatures gives the values
(lia/a)mag ~ 0.3 x 10-3 and (lic/c)mag ~ -l.l x 10- 3 . This leads to a clearly visible
magnetically induced change of the cia ratio of (li(c/a)/(c/a»mag ~ -1.4 x 10- 3 , and
a negative volume magnetostriction «li V / V)mag ~ -0.5 x 10-3 ) . Therefore GdCuSn is,
like GdAh (section 4.1) and GdCuAI (section 6.4), an example for a compound where the
Gd-Gd exchange interaction leads to a negative magnetovolume effect.
GdCuSn
4.532
~ 4.528
CIS
7.36
7.35
7.34
~
u
7.33
..'
7.32
1.625
-CIS
u 1.620
1.615
~
131.0
<"l
o<t:
...... 130.5
> 130.0
0 50 100 150 200 250 300

T [K]
Fig. 14. Anisotropic thermal expansion of GdCuSn measured by x-ray powder diffraction (Gratz and Lindbaum
1998). The lines represent the extrapolation of the lattice contribution from the paramagnetic range by fitting
Debye functions.
7. Tetragonal systems
7.1. GdAgZ and GdAuz

GdAgz and GdAuz crystallize in the tetragonal MoSiz-type structure (Dwight et a1. 1967).
The space group is 14/mmm with Gd on the 2a-sites (point symmetry 4/mmm) and
Ag(Au) on the 4e sites. The Z atomic position parameter of the 4e sites (point symmetry
4mm) is about 1/3. For GdAgz a value of ZAg = 0.327 ± 0.004 has been determined
from neutron diffraction experiments (Gignoux et a1. 1991). This structure can roughly
be viewed as being composed of three tetragonally distorted body centered cubes along
c-direction, as shown in fig. 15.
GdAg2 has first been reported to order magnetically at about 27 K from resistivity
measurements (Ohashi et a1. 1975). Further studies by Gignoux et al. (1991) including
specific heat. resistivity and magnetization measurements. as well as neutron powder
330 A. LINDBAUM and M. aorraa
c
Ag.Au (4e)
/
Gd (2a) a
Fig. 15. Tetragonal MoSiz-type structure of GdAgZ and GdAuz.
diffraction experiments, showed that this compound orders antiferromagnetically below

TN ~ 22.7 K with two further first-order magnetic transitions at TRI ~ 21.2 K and
TR2 ~ 10.8 K. The neutron diffraction experiments showed that the magnetic order is
incommensurate with a propagation vector of about (0.362, 0, 1) and that the moment
direction seems to change from [110] below TR2 to [001] above TR2 (due to the small
temperature range between TN and TRI it was not possible to investigate the magnetic
structure with neutron diffraction for this range). The observed first-order magnetic
transitions in the ordered range have been attributed to anisotropic terms in the two-ion Gd-
Gd exchange interaction. A further peculiarity, also mentioned by Gignoux et al. (1991) is
that the magnetic ordering temperature of GdAg2 is lower than in TbAg2 (TN ~ 34.8 K),
violating the De Gennes law. This has been referred to a change in the conduction band
due to the boundary situation of GdAg2 concerning the crystal structure, i.e. only the RAg2
with heavy R, starting from Gd, show the MoSh type of structure. Figure 16 shows the
temperature dependence of the lattice parameters as well as of the volume of GdAg2
measured by low temperature x-ray diffraction. As can be seen there is a pronounced
spontaneous anisotropic magnetostriction effect due to the magnetic ordering with no
significant change at TR2. An estimation of the magnetic contribution to the thermal
expansion by extrapolating from the paramagnetic range down to 0 K gives the values
(l::.a/a)mag ~ 0.3 x 10- 3 and (l::.c/c)mag ~ -0.6 x 10- 3 . This leads to a clearly visible
magnetically induced change of the cia ratio of (l::.(c/a)/(c/a»mag ~ -0.9 x 10- 3 , but
to no measurable volume magnetostriction within the sensitivity of the x-ray experiment
(!(l::.V/V)magl <0.1 x 10- 3 ) .
GdAu2 orders like GdAg2 antiferromagnetically, but at a much higher ordering
temperature of TN ~ 50 K (Tung et al. 1996). Neutron diffraction studies for determining
the magnetic structure are in progress. Figure 17 shows the temperature dependence
of the lattice parameters as well as of the volume of GdAu2, also measured by low
temperature x-ray diffraction. In contrast to GdAg2 there is no measurable spontaneous
magnetoelastic effect at all. The magnetically induced change of c/ a as well as the volume
magnetostriction of GdAu2 is smaller than the experimental resolution (i.e, < 10-4 ) . This
SPONTANEOUS MAGNETOELASTTC EFFECTS IN GADOLINIUM COMPOUNDS 331
GdAg 2
3.730
T R2
3.725
~
ell 3.720 ~f N •T RI
3.715
9.29
,...., 9.28
~
u 9.27
9.26
129.5
,....,
(") 129.0
o~
;> 128.5
128.0
2.494
ell 2.493
......
u
2.492
2.491
0 50 100 150 200 250 300
T [K]
Fig. 16. Anisotropic thermal expansion of GdAg2 measured by x-ray powder diffraction (this work). The lines
represent the extrapolation of the lattice contribution from the paramagnetic range by fitting Debye functions.
The arrows indicate the different magnetic transition temperatures (see text).
different behaviour concerning the spontaneous magnetostriction may - like the different
TN (see above) - also be connected with conduction band properties, leading to a different
RKKY exchange coupling of the Gd moments.
7.2. Gd2Cu21n and Gd2Ni2-x1n

As reported by Kalychak et al. (1990) the R2CU2In compounds (with exception of R = Eu
and Yb) crystallize in the tetragonal M02FeB2 type of structure (space group P4/mbm). In
case of the R2Nhln compounds this structural type occurs only for R = La, Ce, Pr and Nd.
The other R2Ni2In compounds including R = Gd show the orthorhombic Mn2AIB2 type of
structure (space group Cmmm). But with an off-stoichiometric content of Ni (R2Nh-xIn
with x = 0.22) the tetragonal M02FeB2 type of structure is also formed for R = Sm to Lu.
This means that Gd2Cu2In and Gd2NiI.78In have the same crystal structure, allowing again
a direct comparison of the spontaneous magnetoelastic effects in two compounds, which
differ only by one of the partner elements of Gd. Figure 18 shows the arrangement of the
GdAu 2
3.730
3.725
-<......
~ 3.720
3.715
9.02
....., 9.01
......
ooc:t:
u 9.00
8.99
.....,
~ 125.0
......
ooc:t:
> 124.5
124.0
2.421
~
....... 2.420
u
2.419
2.418
0 50 100 150 200 250 300
T [K]
Fig. 17. Anisotropic thermal expansion of GdAu2 measured by x-ray powder diffraction (this work). The lines
represent the result of fitting Debye functions to the whole temperature range.
c
I~~~~--J-Gd (4h)
In (2a)
_~_ •
.._
a
_fl__ .
CU,Ni (4g)
atoms within the tetragonal unit cell. The Gd atoms occupy one type of crystallographic
site, namely the 4h-sites with only orthorhombic point symmetry mm (atomic position
parameter XGd ~ 0.18). The Cu atoms occupy the 4g-sites (mm, atomic position parameter
.:::[t ...t~
7.50 ~~
3.820
3.815
[::.~.~ •
3.810 •
0.510 •••
0.509
<':l ••
() 0.508 e.
0.507 t===~~~~~~!!'~~~
217
;;;"
~ 216
;>
215
o 50 100 150 200 250 300

T [K]
Fig. 19. Anisotropic thermal expansion of Gd2CU2In measured by x-ray powder diffraction (this work). The lines
represent the extrapolation of the lanice contribution from the paramagnetic range by fining Debye functions.
XCu ~ 0.38) and the In atoms occupy the high-symmetry sites 2a with point symmetry
41m.
Fisher et al. (1999) reported first about the magnetic properties of R2CU21n compounds.
Magnetization as well as electrical resistivity measurements showed that all the investi-
gated magnetic compounds (R = Gd to Tm) order ferromagnetically with relatively high
ordering temperatures, varying between 27 K for H02Cu21n and 86 K for Gd2Cu2ln. The
easy axis varies among the investigated compounds. For Gd2Cu21n it is parallel to the
tetragonal c axis. For the isostructural Gd2Ni 1.781n no report concerning the magnetic
properties could be found in literature. The only available information comes from un-
published susceptibility measurements (Hilscher 2(01), indicating that Gd2Ni 1.781n orders
antiferromagnetically below TN ~ 20 K.
Figures 19 and 20 show the anisotropic thermal expansion obtained by x-ray powder
diffraction for Gd2Cu21n and Gd2Nil.781n, respectively. Within the sensitivity of the ex-
periments no magnetovolume effect can be observed in both compounds (I(~ V I V)magl <
0.1 x 10-3 ). But the comparison of the anisotropic effects shows pronounced differences.
For Gd2Cu21n the estimation for the magnetic contribution to the thermal expansion by
extrapolating from the paramagnetic range down to 0 K gives the values (~ala)mag ~
-1.9 x 10-3 and (~clc)mag ~ +3.8 x 10-3 . This leads to a large magnetically induced
change of the cia ratio of (~(cla)/(cla))mag ~ 5.7 x 10- 3 . In the case of Gd2Ni 1.78In the
Gd 2Ni l .7SIn
7.43
7.42
:<
........ .T N
C<:l 7.41
7.40
3.705
......
o<t:
........ 3.700
u
3.695
0.500
~
u
0.499
0.498
~
...... 204
o<t:
.......
;> 203
202
0 50 100 150 200 250 300
T[K]
Fig. 20. Anisotropic thennal expansion of Gd2Nil.78ln measured by x-ray powder diffraction (this work).
The lines represent the extrapolation of the lattice contribution from the paramagnetic range by fitting Debye
functions.
observed anisotropic effects are much smaller «da/a)mag ~ -0.2 x 10-3, (dc/c)mag ~
0.4 x 10- 3 , (d(c/a)/(c/a»mag ~ 0.6 x 10- 3) . This means that, like in the case of GdCuAI
and GdNiAI (see section 6.4), the exchange of the Cu atoms by Ni atoms leads to a strong
decrease of the anisotropic magnetoelastic effects. However, it has to be noted, that in the
present case the change of the partner element of Gd leads also to a strong decrease of the
magnetic Gd-Gd interaction itself, reflected in the pronounced decrease of the magnetic
ordering temperature. This may also be a reason for the weaker spontaneous magnetostric-
tion in the Ni compound.
7.3. GdNi2B2C
Since the discovery of the RT2B2C borocarbides (T = transition metal) much attention
has been paid to the physical and structural properties of the whole series of isotypic
compounds, because of the high superconducting transition temperatures and because
of the interesting interplay between magnetic ordering and superconductivity. These
compounds crystallize in the tetragonal LuNi2B2C type of structure, which might be
c Gd (2b)
Fig. 21. The tetragonal unit cell of GdNi2B2C.
regarded as a variant of the ThCr2Sh type with two additional carbon atoms in the
tetragonal unit cell (Siegrist et al. 1994). The tetragonal unit cell of the structure is shown
in fig. 21. The space group is 14/mmm with R on the 2b sites (high point symmetry
4/mmm), Ni on the 4d sites, B on the 4e sites and C on the 2a sites. The only fractional
coordinate not fixed by symmetry is ZB which takes a value of ~ 0.14 in case of GdNhB2C
(Belger et al. 1998; Lynn et al. 1997).
Detlefs et al. (1996) have investigated the magnetic structure of GdNhB2C with resonant
and nonresonant magnetic x-ray-scattering techniques. These studies showed that between
TN ~ 19-20 K and TR ~ 14 K the magnetic structure is of the transverse sine-modulation
type with an incommensurate propagation vector of (~0.55, 0, 0). The magnetic moments
of Gd lie within the basal plane perpendicular to the propagation vector. Below TR a
component of the Gd moment develops along the c axis with the same propagation vector
as the component in the basal plane. Further information on the magnetic structure below
TN has been gained by 155Gd Mossbauer spectroscopy (Tomala et al. 1998), suggesting
a bunched spiral-like magnetic structure with the moments rotating within the b-c plane.
Despite the considerable efforts devoted to resolve the magnetic structures of GdNhB2C,
the absence of superconductivity in this compound remains an open question.
Concerning the spontaneous magnetostriction, GdNhB2C is a further example of only
very weak effects. As can be seen in fig. 22 there is no effect visible within the sensitivity of
the x-ray diffraction experiments, neither in the volume nor in the c/ a ratio. Measurements
on a single crystal using capacitance dilatometry showed effects of about 5 x 10-5
(Massalami 2002). These small effects are in accordance with the analysis of ErNhB2C
(Doerr et al. 2002), where the magnetoelastic phenomena have been attributed to crystal
field effects only (compare the different situation in the RCU2 compounds which show a
significant exchange contribution - see section 8.6). Like for GdNis (see section 6.2), the
reason for the small (i.e. < 10-4 ) effects in this compound could also be that only one
atom among six is a Gd atom, leading to weak magnetoelastic effects.
GdNi282C
3.580
-<......
~
3.578
3.576
~TN
3.574
10.380
........
...... 10.374
0<
o 10.368
10.362
133.0
........
(")
132.8
0<
......
132.6
>
132.4
2.900
~
u
2.898
2.896
0 50 100 150 200 250 300
T [K]
Fig. 22. Anisotropic thermal expansion of GdNiZB2C measured by x-ray powder diffraction (this work). The
lines indicate extrapolations from the paramagnetic range obtained by fitting Debye functions to the temperature
range above TN.
8. Orthorhombic systems
8.1. Magnetostructural transitions in Gd5(SixGel-x)4 compounds

A giant magnetocaloric effect (MCE) has been discovered in the Gd5(SixGel-x)4
pseudobinary system with x"'; 0.5 (Pecharsky and Gschneidner Jr. 1997a, 1997b, 1997c,
1999). In the composition range 0.24 ~ x ",; 0.5 the MCE is connected with a first-order
transition from a high-temperature paramagnetic to a low-temperature ferromagnetic state,
at temperatures ranging from 130 K to 276 K (Pecharsky and Gschneidner Jr. 1997b).
A study by Morellon et al. (l998a) on Gd5(Sio.45Ge0.55)4 (i.e. x = 0.45) has revealed
that on cooling this transition is accompanied by a structural transition from a monoclinic
structure in the paramagnetic state to an orthorhombic structure in the ferromagnetic state.
Furthermore this magnetostructural transition can be induced reversibly by an external
magnetic field, leading to strong magnetoelastic effects (Morellon et al. 1998a) as well as
to a giant negative magnetoresistance (Morellon et al. 1998b; Levin et al. 1999, 2000). In
400 I
I
I I
I I
I 0(1)
350 I
I I
M I PM
300
I
I
I
I PM
I
L-- --
g I
0(11) : :
I
I
~
250 PM II
1-0
I I
....C':S
~
200 I I
1-0 I I 0(1)
~
I I
0. FM
a
~
150 I
_----l
Eo-< 0(11)
100
A
Gd s(Si xGe l _x)4
50
0
0.0 0.2 0.4 0.6 0.8 1.0
X
Fig. 23. Magnetic and crystallographic temperature-composition phase diagram of the GdS(SixGel_x)4
compounds (after Morellon et aI. (2000». FM, PM, AF label different magnetic phases (FM: ferromagnetic,
PM: paramagnetic, AF: antiferromagnetic). 0(1), M and 0(11) label different crystallographic structures (0(1):
orthorhombic GdsSi4 structure, M: monoclinic structure, 0(0): orthorhombic GdSGe4 structure). The solid line
marks the first-order magnetostructuraI phase boundary.
contrast to the compounds with 0.24 :::::; x :::::; 0.5, the Ge-rich compounds with x :::::; 0.2 order
antiferromagnetically (or ferrimagnetically) at about 125 K (second-order transition) and
then experience a further first-order transition to a low-temperature ferromagnetic state,
connected with a giant MCE (Morellon et al. I998a).
One example for the interesting magnetoelastic properties of the Gds(SixGe l-x)4
pseudobinary system is the compound Gds(Sio.1 GeO.9)4 (i.e. x = 0.1). In contrast to the
compounds with 0.24 :::::; x :::::; 0.5, which show a monoclinic structure, this compound
crystallizes in an orthorhombic structure (GdsGe4 type), which is similar to the GdsSi4
type of the Si-rich compounds (Pecharsky and Gschneidner Jr. 1997d). Both, the GdsGe4-
and the GdsSi4 type are described within space group Pnma, the Gd atoms occupy three
different crystallographic sites (Gdl: 4c, Gd2: 8d, Gd3: 8d), and the Ge and Si atoms are
statistically distributed over three sites (MI: 4c, M2: 4c. M3: 8d). The only difference
between the two types lies in different fractional coordinates, which are not fixed by
symmetry (for a comprehensive structural study of the Gds(SixGel-x)4 pseudobinary
system see Pecharsky and Gschneidner Jr. (l997d) and Morellon et al. (2000». For
illustrating the magnetic and crystallographic properties of the Gds(SixGel-x)4 system,
the magnetic and crystallographic temperature-composition phase diagram is shown in
fig. 23.
Ac-susceptibility measurements by Morellon et al. (2000) showed, that (on heating)
Gds(Sio.IGeo.9)4 undergoes a first-order transition from a ferromagnetic to an antiferro-
magnetic state at Tc = 81 K, followed by a second-order transition to the paramagnetic
state at TN = 127 K. Measurements of the thermal dependence of the lattice parameters
7.9
7.8
7.7
rEr --c-o- - a
-e - - - - -..()
0(1) I 0(11)
7.6 I
<r---o-!<b
7.5
7.4
888 _ _ _d
.........,
r...-.·--.. . --
-...,
l"1
~ 880
> 872 --.- .....
o 50 100 150 200 250 300
T [K]
Fig. 24. Thermal dependence of the lattice parameters and the volume of Gd~(Sio.1 Geo.9 )4, measured by x-ray
powder diffraction. The shown data have been extracted from Morellon et al. (2000). The dashed lines serve as a
guide for the eyes.
using x-ray powder diffraction, reported by the same authors and shown in fig. 24, re-
vealed a very pronounced spontaneous magnetostriction at the first-order ferromagnetic to
antiferromagnetic transition at Tc = 81 K, whereas no significant effects could be observed
at TN. On cooling through Tc the following abrupt changes of the lattice parameters are
visible: (I:::.ala)mag ~ -16 x 10-3 , (!:!.blb)mag ~ 3 x 10-3 , (I:::.clc)mag ~ 7 x 10-3 and
(I:::. V I V)mag ~ -6 x 10- 3 . The change of the c]a ratio is (~~/~~)
)mag ~ 23 x 10- 3 . This
means that the anisotropic effects are larger than 2%, i.e. Gds(SlO.1 GeO.9)4 can be classified
as a giant magnetostriction (GMS) compound (Engdahl 1999).
Furthermore, Rietveld analysis of the x-ray powder patterns showed, that the sponta-
neous magnetostriction at Tc is connected with a significant change of some of the frac-
tional coordinates (Morellon et al. 2000), leading mainly to a shifting of atoms in the
a-direction, where the magnetostriction is largest. The obtained atomic positions are very
similar to the values determined for Gds Sia (Pecharsky and Gschneidner Jr. 1997d). This
means that the antiferromagnetic to ferromagnetic transition is not only accompanied by a
giant magnetostriction of the lattice parameters, but also by a structural change. In order to
Fig. 25. Orthorhombic structures of GdS(Sio.1GeO.9)4 below and above the magnetostructural transition. The
dolled boxes and the arrows indicate roughly the shifting of the atoms in the GdSGe4 type (0(11» compared to
the GdsSi4 type (0(1)).
illustrate this magnetostructural transition from the high-temperature Gd5Ge4 type to the
low temperature GdsSi4 type, fig. 25 shows the orthorhombic unit cells, with atomic posi-
tions obtained from Rietveld fits below (30 K) and above (100 K) the transition. The main
difference between the two orthorhombic structures is a common shifting (in a-direction)
of the atoms in the upper half of the unit cell relative to the atoms in the lower half.
Forced magnetostriction measurements using a strain gauge technique, also performed
by Morellon et al. (2000), indicate that the magnetostructural transition can be induced
reversibly by an external magnetic field. This means that there is a remarkable resemblance
of the observed magnetostructural transition in Gds(Sio.IGeo.9)4 with the transition in
Gd5(Sio.4sGeo.ss)4 (Morellon et al. 1998a), where the transition is also dominated by
a drastic reduction of the lattice parameter a. However, it has to be pointed out, that
in Gds(Sio.IGeo.9)4 no change of the symmetry is involved in the magnetostructural
transition.
8.2. GdNi
GdNi crystallizes in the orthorhombic CrB type of structure (space group Cmcm). The Gd
atoms are located on the 4c sites with point symmetry mm (0, YGd ~ 0.14, The Ni atoms i).
also occupy the 4c sites with YNi ~ 0.43 (see e.g. Buschow (1980». It is interesting to
note that among the RNi compounds there exists a second type of orthorhombic structure.
Only the compounds with R from La to Gd crystallize in the CrB type. The compounds
with R from Dy to Tm and Y show the less symmetric FeB type with space group Pnma
(see e.g. Burzo et al. (1990». As reported by Blanco et at. (1992) TbNi crystallizes in
a monoclinic intermediate structure. Figure 26 shows the orthorhombic unit cell and the
atomic arrangement of the CrB type of structure. (The shown orthorhombic cell is not the
340 A. LINDBAUM and M. ROTTER
__---+t.Gd (4c)
Fig. 26. Orthorhombic CrB-type structure of GdNi.
primitive unit cell. since the lattice is base centered orthorhombic. i.e. there is an additional
lattice point in the centre of the a-b planes.)
As shown by neutron diffraction experiments and magnetization measurements, GdNi
is a simple collinear ferromagnet with the magnetic moments parallel to the b-axis below
Tc ~ 69 K (Blanco et al. 1992). The magnetic moment at 4.2 K is 7.3 ± 0.1 /-LB. NMR
spectra of this compound are also consistent with a direction of magnetization along the
b-axis for this compound (de Jesus et al. 2(00).
The spontaneous magnetostriction, obtained by x-ray powder diffraction, shows, like
for Gd5(Sio.IGeo.9)4 (see section 8.1), very large anisotropic effects (see fig. 27). The
estimated values at 0 K in the different crystallographic directions are (6a j a ) mag ~ 4.0 X
10- 3 • (6bjb)mag ~ 5.4 x 10- 3 • (6cjc)mag ~ -8.2 x 10- 3 and (6 V j V)mag ~ 1.2 x 10-3 .
Especially the spontaneous magnetically induced contraction in the c-direction of almost
I % is outstanding. The magnetically induced change of the c jb ratio reaches (~~/1~»mag ~
-1.36 x 10-2 and therefore GdNi has to be considered as a GMS compound (Engdahl
1999). Whether the observed giant magnetostriction of the lattice parameters is connected
with a change of the atomic positions. has not been determined. i.e. further studies are
necessary in order to answer the question whether GdNi shows, like Gd5(Sio.IGeo.9)4. a
magnetostructural transition and whether this transition can be induced by a magnetic field.
The relatively large positive volume effect could be due to an induced itinerant Ni moment
(Paulose et al. 1996), which is confirmed by a comparison with GdPt (see section 8.5).
A further hint for the existence of an induced Ni moment could be the temperature
dependence of the magnetization. which deviates remarkably from the typical bahaviour of
rare earth systems (see e.g. Walline and Wallace (1964». The volume effect has also been
measured by a strain gauge technique with a reported value of about 1.8 x 10-3 at 10 K
(Espeso et al. 1994). In addition to the large positive volume effect below Tc • this strain
gauge experiments showed a very small negative effect of about 10-5 around Tc , too small
for being detectable with x-ray powder diffraction. The reason for this small additional
effect is unclear.
GdNi
3.78
3.77 ••• ~Tc
~ ••
CIl
3.76
10.32 •• •
o~ 10.30 •
.0 10.28
•
10.26
4.24
o~
•
4.22 •
•• •
u
4.20
165.2
;;:; 164.8
o<t:
'--' 164.4
>
164.0
163.6
0 50 100 150 200 250 300
T [K]
Fig. 27. Anisotropic thermal expansion of GdNi measured by x-ray powder diffraction (Gratz and Lindbaum
1998). The lines represent extrapolations of the lattice contribution from the paramagnetic range. obtained by
fitting Debye functions.
8.3. GdNil_xCUx
The assumption that an induced itinerant Ni moment plays an important role for the
pronounced positive magnetovolume effect in GdNi, is supported by the fact that by
substituting Cu for Ni the volume effect becomes smaller. For Cu concentrations x higher
than 20% the FeB type of structure is formed instead of the CrB type of structure.
Magnetization measurements and neutron powder diffraction experiments showed that
with 30% Cu the system is, like GdNi, a simple collinear ferromagnet with a very similar
ordering temperature of Tc ~ 68 K and with the magnetic moment direction parallel
to the b-axis of the FeB structure (Blanco et al. 1992). However, the volume effect of
(~V / V)mag ~ 0.6 x 10- 3 at 10 K (Espeso et al. 1994) is about two to three times smaller
than in GdNi. Furthermore, for Cu concentrations higher than 35% the magnetic structure
changes from ferromagnetic to antiferromagnetic (Gignoux and Gomez-Sal 1976). The
neutron diffraction studies by Blanco et al. (1992) showed that the compound with a
Cu concentration of 60% orders in a helimagnetic structure with a propagation vector
342 A. LINDBAUM and M. RaITER
(0,0,0.25) with the moments lying in the a-b plane (TN ~ 63 K). The magnetovolume
effect for this compound reaches a value of (~V / V)mag ~ 0.8 x 10- 3 at 10 K (Espeso
et al. 1994).
8.4. GdCu
The RCu series is characterized by a structural instability. The light rare-earth based
compounds crystallize in the orthorhombic FeB-type structure, while the heavy ones do
so in the cubic CsCI-type structure. GdCu is the first in the series to adopt this cubic
structure at room temperature, but is unstable, showing a tendency to transform into the
FeB type at low temperatures. But this martensitic structural transition occurs only in a
bulk (polycrystalline) sample, whereas powdered samples keep the CsCI structure down
to lowest temperatures (Blanco et al. 1999). Studying the spontaneous magnetoelastic
effects in the orthorhombic FeB-type phase of GdCu is very interesting with respect to
a comparison with the isostructural GdPt (see section 8.5).
As reported by Blanco et al. (1999), neutron diffraction patterns of powder and bulk
polycrystalline samples of GdCu were obtained for both structures: in the cubic CsCI type
of structure, which orders antiferromagnetically at TN ~ 150 K, a propagation vector of
(& ! 0) has been found with the moments probably parallel to the c-axis (note that other
noncollinear magnetic structures might give rise to the same neutron-diffraction pattern).
In the orthorhombic low temperature phase (TN ~ 45 K) the available diffraction patterns
suggest a magnetic propagation of (0 ! !) and a helimagnetic arrangement of the moments
normal to the [0 II] direction. Furthermore it has been concluded that a simple RKKY
model of an isotropic exchange interaction can be used to understand the stability of the
magnetic structure in the cubic high temperature phase, whereas anisotropy in the magnetic
interactions has to be taken into account for the orthorhombic low temperature phase.
Concerning the spontaneous magnetoelastic effects in GdCu the only available data
are the lattice parameters, as obtained by Blanco et al. (1999) from the above mentioned
neutron diffraction patterns at variable temperatures. Due to the relatively low resolution
of these neutron diffraction experiments concerning the determination of the lattice
parameters it is only possible to give qualitative results. Figure 28 shows data for the
orthorhombic FeB type, indicating a large anisotropic spontaneous magnetostriction with
a negative sign in the b direction (roughly -I x 10- 2), accompanied by somewhat
smaller positive effects in the a (roughly 5 x 10-3 ) and c (roughly 3 x 10- 3 ) directions.
This behaviour of GdCu in the FeB type is similar to that of the isostructural GdPt
(see section 8.5) and suggests, that the kind of magnetic ordering (GdPt: ferromagnetic,
GdCu: antiferromagnetic) has no influence on the qualitative behaviour of the spontaneous
magnetostriction.
8.5. GdPt
Like the RNi compounds, the RPt compounds crystallize in two different orthorhombic
structures. The heavy RPt (R = Gd to Tm) show the FeB type of structure (space group
Pnma), whereas the light RPt (R = La to Nd) show the more symmetric CrB type of
structure with space group Cmcm (Dwight et al. 1965; Roy et al. 1978). The Gd atoms
occupy the 4c-sites (x, y = !'
z. point symmetry m) of the space group Pnma with
1.00
0.99
~
0
....
00
'-'
0.98
Q.,
<::::
Eo 0.91
,...::
~
0
....
00
'-'
0.96
~ GdCu
> 0.95
(FeB phase)
0.94
o w ~ ~ W lOOIWl~IMIW
T [K]
Fig. 28. Anisotropic thermal expansion of the orthorhombic FeB phase of GdCu obtained from neutron
diffraction experiments on a bulk polycrystaIline sample (Blanco et aI. 1999). The lattice parameters (lp) at 180 K
= =
are: a 7.15 ± 0.01 A. b 4.527 ± 0.008 A. c 5.471 ± 0.008 A. =
Pt (4c) Gd (4c)
__-:c: :-": ~': .~-- '- -.;:.~
c o G I
GI
a
Fig. 29. Orthorhombic FeB-type structure.
XGd ~ 0.180 and ZGd ~ 0.133. The Pt atoms also occupy the 4c-sites with XPt ~ 0.036
and ZPt ~ 0.623. Figure 29 shows the orthorhombic unit cell and the atomic arrangement
of this structure type.
The RPt compounds are ferromagnets with relatively low ordering temperatures (Castets
et at. 1980, 1982). GdPt has the highest ordering temperature among all RPt compounds
(Tc ~68 K).
Figure 30 shows the temperature dependence of the lattice parameters of GdPt, obtained
by x-ray powder diffraction. The estimated values of the spontaneous magnetoelastic
344 A. LINDBAUM and M. ROTrER
GdPt
7.095
:< 7.090 •
........
~ 7.085
•
•
7.080 f-'-'-'-'-...J....L:r:....LL.Ll-L.L...J....L.LLL.Ll-L.L...L.L.LL~
~
4.500
4.495 ~
I ~ ...~ ..........,............. r-I
.0 4.490 •
4.485
••
5.595
........ 5.590
~
5.585 ••
•
5.580 \----'----------'------'----'--------'------',
178.5
........
M
~ 178.0
:>
177.5
o 50 100 150 200 250 300

T [K]
Fig. 30. Anisotropic thermal expansion of the orthorhombic GdPt measured by x-ray powder diffraction (this
work). The lines represent extrapolations of the lattice contribution from the paramagnetic range, obtained by
fitting Debye functions.
effects at 0 K are (/),.a/a)mag ~ 1.4 x 10- 3 , (/),.b/b)mag ~ -2.3 x 10- 3 , (/),.C/c)mag ~

0.9 x 10-3 and !(/),. V /V)mag! < 0.1 x 10- 3 . This means that the pronounced linear effects,
which are dominated by a negative magnetostriction in the b-direction, compensate each
other, leading to a volume effect smaller than the experimental resolution. This is a further
hint that the observed volume effect in GdNi (see section 8.2) is due to an induced itinerant
Ni moment, since GdNi has a related crystal structure, almost the same magnetic ordering
temperature and is also ferromagnetic.
8.6. GdCU2
Among the presented systems in this chapter, GdCU2 is one for which a variety of
studies dealing with the magnetic properties and spontaneous as well as field-induced
magnetostriction have been done in the past and also more recently (Rotter et al. 2oola).
AIBz• type
AlB z- type CeCuz· type
Fig. 31. The, upper part shows the highly symmetric hexagonal AIBZ type of structure. In the lower part the
hexagonal cell of the AlBZ structure is doubled along the hexagonal axis (left), which allows a direct comparison
with the ceCuZ type (right).
Since we think that this compound can be viewed as a model system for the investigation of
magnetoelastic effects, it follows a relatively detailed description of magnetoelastic effects
of GdCuz.
8.6.1. Crystal structure

All 1:2 compounds of lanthanides with Cu exhibit the orthorhombic CeCu2-type
structure (see e.g. Debray (1973), space group l mma, Ce on 4e sites with point symmetry
mm, Cu on 8h), with the exception of LaCu2. LaCu2 displays the related hexagonal
AIB2 structure with space group P6/ mmm (Storm and Benson 1963). The orthorhombic
CeCu2 structure can be viewed as a distorted AIB2-type structure (see fig. 31). In some
RCU2 compounds a martensitic transition in high magnetic fields has been observed and
associated with a conversion of the CeCu2 to the AIB2 type of structure (Svoboda et al.
1999). Furthermore for LaCu2 a pressure induced transition from the AIB2 type to the
CeCu2 type has been predicted by ab-initio total energy calculations and experimentally
observed by high-pressure x-ray diffraction with a diamond anvil cell (Lindbaum et al.
2000, 1998). The atomic position parameters of GdCU2,which are not fixed by space group
346 A. LINDBAUM and M. ROlTER
N
- bO
.lll:
<,
4.0
3.0
S
~ 2.0
:::&l
a
1.0
0.0 '---_--"-_ _"'---_---'-_ _- ' - - _ - - - l

o 10 20 30 40 50
T (K)
Fig. 32. Temperature dependenceof the magnetization of GdCU2 (Roller et aI. 2000b).
symmetry, have been determined from neutron diffraction experiments and are discussed
below (see section 8.6.3).
8.6.2. Magnetic properties

Investigations of GdCu2 in the magnetically ordered state (TN:::::: 42 K) revealed that
in this compound no change of the magnetic structure exists in zero external magnetic
field (Koyanagi et al. 1998; Luong and Franse 1981; Luong et al. 1985). The magnetic
entropy as calculated from the specific heat reaches its theoretical value of R In 8 at
47 K, just above TN (Koyanagi et al. 1998). In high magnetic fields the anisotropy in the
magnetization does not exceed a few percent (Borombaev et al. 1987). Measurements of
the anisotropy in the magnetization of a single crystal (see fig. 32) revealed an anomaly at
T:::::: 10 K (Rotter et al. 2000b), the origin of which is still the topic of current research.
Neutron scattering experiments on polycrystalline and single crystal samples (Rotter
et at. 2000a), as well as magnetic scattering experiments using synchrotron radiation
(Rotter et at. 2000b), showed that the modulation vector of the magnetic structure is
Qo = (~ I 0) and that the type of ordering can be viewed as an antiferromagnetic
modulation of the moments in the b direction and a cye/oidal propagation in the a direction
with a pitch angle of 120 degrees. The proposed magnetic structure of GdCU2 is shown
in fig. 33. The magnetic unit cell consists of three structural unit cells aligned in the a
direction. From the projection into the ac-plane the cycloidal propagation in the a direction
can be seen. The filled and open symbols denote two different neighboring ac planes
showing the antiferromagnetic propagation in b direction. A Rietveld refinement of the
powder data at 2 K gives a magnetic Gd moment of 6.9 ILB (Rotter et at. 2000a).
8.6.3. Spontaneous magnetostriction

The thermal expansion of GdCu2 has been measured already in 1985 on polycrystals
by dilatometric experiments (Luong et at. 1985) and later by x-ray diffraction on powder
(Gratz and Lindbaum 1994) and single crystals (Borombaev et at. 1987). The most
recent measurements have been performed on a single crystal produced by the Bridgeman
• Gdy=O.75
o Gdy=O.25
Fig. 33. Magnetic structure of GdCU2. the different symbols denote atoms belonging to the same ac plane. for
simplicity the copper atoms are not shown. The magnetic structure can be viewed as a superposition of three
simple antiferromagnetic lattices asindicated bythe numbers (Rotter et aI. 2000a).
method and using a capacitance dilatometer down to 500 mK in a magnetic field of 0-

15 T. Figure 34 shows the thermal expansion measured along the a-, b- and c-axis in
zero field in comparison with results of powder x-ray diffraction (Rotter et al. 2001a;
Gratz and Lindbaum 1994). Below the ordering temperature TN the thermal expansion
shows a pronounced negative spontaneous magnetoelastic effect in the a-direction, and
a positive one in the b- and c-direction. These anisotropic contributions cancel each
other leading only to a small magnetovolume effect. The estimated 0 K values of the
spontaneous magnetostriction, obtained by the powder x-ray diffraction experiments are
(~a/a)mag ~ -2.1 x 10- 3 , (~b/b)mag ~ 1.2 x 10-3, (~c/c)mag ~ 1.5 x 10- 3 and
(L\ V / V)mag ~ 0.6 x 10- .3
In case of GdCU2 not only the magnetoelastic effects on the lattice parameters have
been investigated, but also the magnetically induced influence on the atomic positions. The
atomic position parameters ZGd, ycu and ZCu, which are not fixed by space group symmetry,
have been determined from the neutron diffraction patterns at 2 and 60 K (shown in Rotter
et al. (2000a» by Rietveld analysis: at 2 K the obtained values are ZGd = 0.5403(8),
ycu = 0.0523(8) and ZCu = 0.1653(10). At 60 K (i.e. above TN ~ 42 K) the values
are: ZGd = 0.5429(6), ycu = 0.0527(5) and ZCu = 0.1653(6). As can be seen there is
only for Gd a significant difference in the atomic position between the paramagnetic and
magnetically ordered state, whereas for Cu the differences are very small (as expected for
a pure lattice contribution). This suggests that the observed shifting of the Gd atoms is due
to the magnetic ordering.
8.6.4. Field induced magnetostriction

Figure 35 shows the field induced magnetostriction for external fields along the
a-, b- and c-axis (Rotter et al. 2001a). All measurements were done with increasing
348 A. LINDBAUM and M. RO'ITER
o
-0.001
o
o
-0.002 o
~ o
~ -0.003 o
o
<I c o
o
o
-0.004 o
o
o
00 b
00
-0.005
0.000
v
> VV
~ -0.001 v
v
>
<I v
VV
-0.002 VV
VV
v
v
VV
-0.003 v
VVV
l,:aI~~
o 50 100 150 200 250 300

T(K)
Fig. 34. Nonnalized thermal expansion of GdCU2 along the orthorhombic a-, b- and c-direction (upper figure)
and the volume expansion calculated from these data (bottom figure, the factor facilitates the comparison !
with the upper figure). The symbols denote the results of powder x-ray diffraction (Gratz and Lindbaum 1994),
the lines correspond to expansion measurements on a single crystal using the capacitance method (Rotter et al.
200la). The values €H=O denote the relative length changes in the ordered state with respect to the nonmagnetic
state.
and decreasing field and they show only a small hysteresis. Below /-LoB = 5 T the
magnetostrictive effects are rather small. Above this value two remarkable kinks occur at
5.5 T and 8.0 T, approximately, which are connected to the two magnetic phase transitions
which were also found in magnetization measurements (Borombaev et al. 1987). Above
8.0 T the system is in the induced ferromagnetic state and no further transitions could
be seen when continuing some of the scans up to 15 T (Rotter et al. 2oo1a). From all
the data it is evident that the field induced magnetostriction is strongly different for the
different crystallographic axes (leading again to a very small volume effect) but is nearly
independent of the magnetic field direction. The only difference between the different field
directions was found examining the low field behavior more closely (see the inset in fig. 35,
......... b.a/a /-
I
- E-o I
0.5 1.0
Hila
....J
<, Hllb g :I:
....J
<3
Hllc ---------------f--------c.u
Ha b.b/b
H b
Hc +
Hlla----
Hllb===__
Hllc--__
t
1 1 . 10 -
3
t
o 6 8
Fig. 35. Magnetostriction Sa]«, l:1b/b and l:1c/c of GdCU2 for magnetic fields parallel to the orthorhombic a-.
b- and c-axis at 4.2 K (Rotter et aI. 200 la). The arrows indicate the position of phase transitions. For each curve
the hysteresis is shown. The inset shows the low field data of the derivative of l:1c/ c with respect to the magnetic
field.
there the derivatives of the Sc]« curves are shown as an example). showing some small
differences between the curves. A transition at 0.6 T and 1.2 T is observed for fields parallel
to a and c. respectively. No phase transition is observed for Bllb. This is in accordance
with the findings from the magnetization experiments on a single crystal (Borombaev et al.
1987) and can be attributed to the fact, that in zero field the moments are confined to the
ac-plane.
8.6.5. Discussion
A model for describing the magnetoelastic properties of GdCU2 has been proposed
by Rotter et al. (200la). following the ideas outlined in section 3. Using eqs (13)
and (14) the magnetostriction has been calculated. By a comparison of the model with
the experimentally determined spontaneous (fig. 34) and field-induced magnetostriction
(fig. 35), it could be shown that the magnetoelastic interaction is dominated by the next
neighbor exchange interaction in the b-direction (for a detailed explanation see Rotter et a1.
(200la». In the b-direction the Gd atoms have the shortest distances and are arranged in
zig-zag like chains.
Another point which has to be discussed is the possible origin of the magnetoelastic
interaction. Note the experimental result that the strains do not depend on the direction
of the magnetic field (see fig. 35), i.e. EHlla ::;::: EHllb ::;::: EHlle == Esat. It follows, that the
derivatives of the diagonal components of the exchange interaction tensor with respect
to any strain E are equal (Rotter et a1. 2oola). Such a behaviour may be attributed to the
fact that the magnetoelastic interaction in GdCU2 is dominated by the isotropic exchange
and thus can be described by eqs (17) and (18). The anisotropic exchange interaction which
leads to the observed magnetic structure with moments restricted to the ac-plane is small
and does not contribute to the magnetoelastic interaction. When aligning the moments
ferromagnetically with a magnetic field of about 9 Tesla (see fig. 35), the signs of the
magnetoelastic strains tsa]«, li.bjb and Sc]«: are reversed (compared to the spontaneous
magnetostriction), in agreement with the supposed model. However, this does not change
the fact that the sign of the magnetostriction in the a-direction remains opposite to the other
two directions.
Finally, it has to be mentioned that, in addition to the magnetically induced effects on
the lattice parameters, there is also a shifting of the Gd atoms within the unit cell. As
discussed above, the relative atomic position parameter ZGd changes by about -0.003 due
to the magnetic ordering.
8.7. GdZm
GdZn2 crystallizes in the orthorhombic CeCu2 type of structure (see section 8.6), but
shows in contrast to the isostructural GdCU2 ferromagnetic order with Tc ::;::: 68 K
(Debray et a1. 1970). As discussed in section 8.6, GdCu2 shows a cycloidal antiferromag-
netic structure, whereas GdZn2 is a simple ferromagnet (Debray et a1. 1970). Due to this
difference concerning the magnetic structure it seems very interesting to compare the two
compounds with respect to the spontaneous magnetoelastic effects.
Figure 36 shows the spontaneous magnetostriction of GdZn2, measured by x-ray powder
diffraction (Ohta et a1. 1995). The measurements indicate, like in GdCU2, a negative
spontaneous magnetostriction in the a-direction and a positive in the b- and c-directions,
but the effect in the a direction is very small and at the limit of the resolution of the
experiment. The estimated values at 0 K are: (li.aja)mag::;::: -0.2 x 10- 3 , (li.bjb)mag::;:::
1.4 x 10- 3 , (li.cjc)mag::;::: 1.9 x 10- 3 and (li.VjV)mag::;::: 3.1 x 10- 3 . This means that,
interestingly, the spontaneous magnetoelastic effects in GdZn2 are qualitatively very
similar to GdCU2, although the magnetic structures are very different. However, the
quantitative comparison of the spontaneous magnetoelastic effects shows pronounced
differences. The contraction in the a-direction is almost zero or at least much smaller than
in GdCU2, whereas the expansion in the other directions is similar, leading to a much larger
volume effect.
GdZn 2
4.510
.......,
4.505
~
~
4.500
4.495
7.23
7.22
~ 7.21
.0 7.20
7.19
•
7.59
......., 7.58
~ 7.57
u 7.56
7.55
247
.......,
(")
<><t: 246
'-'
> 245
244
0 50 100 150 200 250 300

T [K]
Fig. 36. Anisotropic thermal expansion of the orthorhombic GdZn2. measured by x-ray powder diffraction
(the data points have been extracted from Ohta et aI. (1995». The lines represent extrapolations of the lattice
contribution from the paramagnetic range.
8.8. Gd(CUI-xNixh
A further possibility to study the influence of the magnetic structure on the spontaneous
magnetoelastic effects is the comparison of GdCU2 with the solid solution Gd(Cu I-x Nixh.
This is possible since up to a Ni content of about 40% the CeCu2 type of structure remains
stable. On the other hand there is a pronounced change of the magnetic properties due
to the Ni substitution. The magnetic ordering temperature increases from 42 K (x = 0)
up to about Ito K for x = 0.3 and, interestingly, the magnetic structure changes from
antiferromagnetic to ferromagnetic above a Ni concentration of about x = 0.15 (Poldy and
Kirchmayr 1974; Gratz and Poldy 1977).
Measurements of the spontaneous magnetostriction of the ferromagnetic compound
Gd(Cuo.gNio.2h (Tc ~ 95 K) by x-ray diffraction (Borombaev and Markosyan 1987) show,
like for GdZn2, qualitatively the same results as for the antiferromagnetic GdCU2, i.e. a
contraction in the a-direction and an expansion in the other directions. This means that
again the spontaneous magnetoelastic effects remain qualitatively the same, when changing
c
Fig. 37. Orthorhombic Fe3C-type structure of Gd3Ni and Gd3Rh.
from the complicated antiferromagnetic structure of GdCU2 to a simple ferromagnetic one.

But again a quantitative comparison shows pronounced differences. The estimated values
at 0 K for Gd(Cuo.gNio.2h are (Ila/a)mag ~ -3.5 x 10-3• (Ilb/b)mag ~ 4.9 x 10- 3 •
(IlC/c)mag ~ 0.8 x 10-3 and (Il V / V)mag ~ 2.2 x 10- 3. In contrast to the pure GdCU2
(see section 8.6) the spontaneous magnetostriction is dominated by a very large effect
in b-direction. The (positive) volume effect is. like in the ferromagnetic GdZn2. much
larger than in GdCU2. Possibly. the ferromagnetic order in Gd(Cuo.gNio.2h and GdZn2 is
responsible for a larger volume effect. But note that in the case of Gd(Cuo.gNio.2h it could
also be an induced itinerant Ni moment which is responsible for the larger volume effect.
8.9. Gd3Ni and Gd3Rh

Gd3Ni and Gd3Rh crystallize in the Fe3C type of structure. which is described in the
space group Pnma. The Gd atoms occupy two different crystallographic sites. namely
the 4c sites (point symmetry m) and the 8d sites (point symmetry I). whereas the Ni
(Rh) atoms are only located on the 4c sites. Figure 37 shows the unit cell and the atomic
arrangement of this structure type. As an example the atomic position parameters of Gd3Ni
at room temperature as reported by Kusz et at. (2000) are given: Gd(l): 4c sites (~0.033.
!. ~ 0.859); Gd(2): 8d sites (~ 0.678. ~ 0.435. ~ 0.175); Ni: 4c sites (~0.388. !.
~ 0.059). As reported by Talik and Neumann (1994) and Talik and Slebarski (1995) the
two compounds Gd3Ni and Gd3Rh show some complicated antiferromagnetic structure
with ordering temperatures of TN ~ 100 K and TN ~ 112 K. respectively.
The spontaneous magnetostriction has been measured by single crystal x-ray diffraction
between 10 and 300 K (Kusz et at. 2000). As can be seen from figs 38 and 39. both
compounds show pronounced linear as well as volume effects. Gd3Ni is characterized
by a large positive spontaneous magnetostriction in a-direction (the estimated value at
OK is (Ila/a)mag ~ 2.9 x 10- 3). whereas the effects in b- and c-direction are about two
Gd3Ni
......... 6.94
• •• •
o~ • ~TN
CIS 6.93
•
6.92
......... 9.68 ••• •

o<C
~
•
.D 9.67
.........
o<t: 6.34
~
u
•
6.33
••• •
426
.........
r"l
o<C 425
~
• ••••
> 424
0 50 100 150 200 250 300

T [K]
Fig. 38. Anisotropic thermal expansion of the orthorhombic Gd3Ni, measured by single crystal x-ray diffraction
(the data points have been extracted from Kusz et al. (ZOOO». The lines represent extrapolations of the lattice
times smaller «~b/b)mag ~ 1.3 x 10- 3, (~C/C)mag ~ - 1.3 x 10- 3). The resulting volume
3
effect of (~V / V)mag ~ 2.9 x 10- is abouttwice as large as in the earlier discussed GdNi.
Gd3Rh, on the other hand, is characterized by a negative spontaneous magnetostriction in
a-direction (estimated value at 0 K (~a/a)mag ~ -2.5 x 10- 3) and by an almost uniform
expansion of the b-e plane «~b/b)mag ~ 2.0 x 10-3, (~c/c)mag ~ 2.6 x 10- 3) . The
3
resulting volume effect of (~ V / V)mag ~ 2.1 x 10- is smaller than in Gd3Ni. A possible
reason for this difference could be that in the case of Gd3Ni an induced itinerant Ni moment
enhances the positive volume magnetostriction.
8.10. GdBazCu307-1J
The magnetostriction in high Tc-superconductors has been investigated on polycrystalline
samples of GdBazCu307-1J using the capacitance method (Zieglowski 1988). This com-
pound orders antiferromagnetically below TN = 2.2 K. The spontaneous magnetostriction
354 A. LINDBAUM and M. RaITER
Gd3Rh
7.19
,......., 7.18
0<
....... 7.17
• •
~
7.16
7.15 •••
9.60
,.......,
•••
0<
....... 9.59 •
.0
•
9.58
••• •
6.35 •
-<.......
u 6.34
•
••
• •
437
r;:;'
0<
.......
>
436 •••
435
0 50 100 150 200 250 300

T [K]
Fig. 39. Anisotropic thermal expansion of the orthorhombic GdJRh. measured by single crystal x-ray diffraction
(the data points have been extracted from Kusz et al, (2000». The lines represent extrapolations of the lattice
is not sensitive to the occurrence of superconductivity showing that magnetic order and
superconductivity are decoupled in this compound. Varying the superconducting proper-
ties by a temperature treatment of the sample showed, that in contrast to the spontaneous
magnetostriction the field induced magnetostriction is strongly dependent on the supercon-
ducting properties.
9. Monoclinic systems
Only two examples with monoclinic structures could be found. One is the already discussed
Gds(SixGel-x)4 system in the concentration range 0.24 ~ x ~ 0.5 (see section 8.1).
A second is the compound GdS1r2, investigated by Kusz et al. (2000), which has a
monoclinic structure related to the orthorhombic structures of Gd3Ni and Gd3Rh (see
section 8.9). The authors reported the temperature dependence of the orthorhombic
lattice parameters, showing only for the b-direction a significant magnetostriction. The
temperature dependence of the monoclinic angle has not been reported.
10. Summary and conclusions
As shown in the preceding sections, there is a wide variety of spontaneous magnetoelastic

effects in Gd-based systems, from very small (below 10- 4) up to effects larger than
10-2 (GMS). Not only the anisotropic spontaneous magnetostriction can reach very large
values (such as the GMS of (~~%~) )mag = -1.36 x 10-2 in GdNi or of (~~C a~) )mag =
2.3 x 10- 2 in Gds(Sio.1 Geo.9)4), but also the magnetovolume effects can be unexpectedly
large (e.g.: (t.:)mag = +0.5 x 10- 2 in pure Gd metal). The occurrence of GMS in Gd
compounds shows that not only the crystal field (as pointed out by Engdahl (1999)), but
also the exchange interaction has to be considered as a source of GMS. In the tables 1
and 2 the spontaneous magnetoelastic effects of the systems presented in this chapter are
summarized.
As can be seen from these tables, for any kind of the magnetic ordering (i.e.
ferromagnetic or antiferromagnetic) examples exist with large and small effects. However,
there is a tendency to larger effects in ferromagnetic systems.
Second, the observed effects depend strongly on the partner elements of Gd, which
can be seen from a comparison of isostructural systems, like for instance GdCuAI and
GdNiAl, Gd2Cu2In and Gd2Ni2-xIn, or GdAg2 and GdAu2. Such comparisons show,
that changing one of the partner elements can have a strong influence on the spontaneous
magnetostriction. How far the qualitative behaviour of the spontaneous magnetostriction
is determined by the type of crystal structure, remains unclear: A comparison of the
CeCu2-type compounds GdCU2, Gd(Cuo.sNio.2h and GdZn2, having different magnetic
structures, shows that the qualitative behaviour of the magnetostriction is always the
same, i.e, the sign of the magnetostriction in the a-direction is opposite to those of
the b- and c-directions. This holds also true when changing the magnetic structure of
GdCu2 from antiferromagnetic to ferromagnetic by applying a magnetic field. Furthermore
also the comparison of the FeB-type compounds GdCu (antiferromagnetic) and GdPt
(ferromagnetic) supports the conclusion. that the qualitative behaviour of the spontaneous
magnetostriction is connected with the crystal structure. But on the other hand the
compounds Gd3Ni and Gd3Rh, which are both antiferromagnetic and have the same crystal
structure, show different qualitative behaviour of the spontaneous magnetostriction. In case
of Gd3Ni it is the magnetostriction in the c-direction, which has opposite sign compared
to the other directions, wheras in Gd3Rh it is the a-direction.
Third, it is obvious that in systems with a small number of Gd atoms (e.g. GdNis
and GdNhB2C) the effects are very small, since the magnetic as well as magnetoelastic
interactions are weaker in systems with low Gd concentration. This is supported by the
studies on GdCU2, showing that at least in case of this compound the magnetostriction is
dominated by the next neighbor exchange interaction (i.e. in case of a compound with low
Gd concentration smaller effects have to be expected due to the smaller number of next
neighbors). But note that systems with high Gd concentration do not necessarily have large
effects. In Gd2In, for instance, two out of three atoms are Gd, leading to strong magnetic
....
....
0-
TABLE I
Summary of the spontaneous magnetostriction in non-eubic systems showingpronouncedanisotropic effects, ordered with respect to the size of the effects. The presented
values are the estimated values at 0 K
Method Sa]« tlb/b Sc]« svrv Te(N) Propagation Moment
[l0-3J [l0-3J [l0-3J [1O- 3J direction
Gds(Si(l.I Geo.9)4 (0) x raj -16 +3 +7 -6 Te-81 K (000) [lJ
GdNi (0) x [bJ +4.0 +5.4 -8.2 +1.2 Te=69K (000) [OIOJ [2J
GdCu (FeB) (0) n lcl 5±3 -1O±3 3±3 -2±5 TN =45 K (O! !) [x, y, z = -yJ [3J
Gd(ClI().8Nio.2h (0) x [dJ -3.5 +4.9 +0.8 +2.2 Te =95 K (000) [4J
Gd2Cu21n (t) x [eJ -1.9 +3.8 < 0.1 Te=86K (000) [001][5J
~
Gd3Rh(0) x[f] -2.5 +2.0 +2.6 +2.1 TN = 112 K [6J r-
GdCuAI (h) x [gJ -1.7 +3.0 -0.4 Te =82 K (000) [OOIJ [7J Z
0
Gd3Ni (0) x[f] +2.9 +1.3 -1.3 +2.9 TN = lOOK [8J t:l:l
GdPt (0) x lel +1.4 -2.3 +0.9 <0.1 Te =68 K (000) [9J i;
GdCU2 (0) x [h] -2.1 +1.2 +1.5 +0.6 TN =42K (j 10) [xOzJ [IOJ :::
GdZn2 (0) x [iJ -0.2 +1.4 +1.9 +3.1 Te =68 K (000) [IIJ 8-
Gd(h) x lel +1.0 +3.0 +5.0 Te=294K (000) >232 K: [00 IJ [12J ~
-l.l
GdCuSn (h)
GdAg2 (t)
x [bJ
x [eJ
+0.3
+0.3 -0.6
-0.5
< 0.1
TN=24K
TN =23 K
(O! 0)
(0.3620 l)
[OOIJ [l3J
> 10.8 K: [00 IJ
< 10.8 K: [I 10][14J
§
tr1
::I:l
Gd2Ni2_xln (t) X [eJ -0.2 +0.4 < 0.1 TN=20K[l5J
x, n indicate the experimental method ~-ray, neutron). Note: < means that the absolute value is smaller than this value, which is about the resolution of the experimental
technique. (h), (t), (0) indicate the crystal system (hexagonal, ~etragonal, Qrthorhombic). In addition Te(N), the propagation vector and the direction of the magnetic
moment are tabulated.
References for magnetostriction measurements: raj Morellon et aI. (2000), [bJ Gratz and Lindbaum (1998), [cJ Blanco et aI. (1999), [dJ Borombaev and Markosyan
(1987), [eJ this work, [f] Kusz et aI. (2000), [gJ Andreev et al, (1999), [h) Gratz and Lindbaum (1994), [iJ Ohta et aI. (1995).
References for magnetic properties: [I] Morellon et aI. (2000), [2J Blanco et aI. (1992), [3] Blanco et aI. (1999), [4] Poldy and Kirchmayr (1974), [5] Fisher et aI. (1999),
[6J Talik and Neumann (1994), [7] Andreev et aI. (1999), [8] Talik and Siebarski (1995), [9] Castets et aI. (1980, 1982), [10] Rotter et al, (2ooob, 2oooa), [II] Debray
et aI. (1970), [12J Cable and Wollan (1968), [13J Bialic et aI. (1997), [l4J Gignoux et aI. (1991), [15J Hilscher (2001).
TABLE 2 V>
Summary of the spontaneous magnetostriction (estimated values at 0 K) of the systems with very small or not determined (n.d.) anisotropic effects. The table is ordered
C3
with respect to the size of the observed volume effects z
Method fI1aja Sb [b Sc]« fI1VjV TC(N) Propagation Moment ~
GdAI2 (c) x [a]
[10- 3] [10- 3] [10- 3] [10- 3]
-1.4 TC= 168 K (000)
direction
[II I] [I]
s
C
V>
d[b] -1.16 3':
GdNiAI (h) x [c] ""+0.3 ""+0.3 +0.8 TC=60K >30 K: (000) [2] ~
GdNio.4ClI().6 (0) d[d] n.d. n.d. n.d. +0.8 TN =63 K (000.25) [xyO] [3] z
GdNio.7ClI().3 (0) d[d] n.d. n.d. n.d. +0.6 TC =68 K (000) [0 I 0] [3]
GdNi2 (c)
GdCu21n (c)
GdPd2In (c)
x [a]
d [e]
d [e]
+0.6
-0.10
-0.02
Tc=74K
TN=IOK[5]
TN = IOK[5]
(000)[4]
~
V>
GdIn3 (c) x [a] ""-0.3 TN =43 K [6]

~
GdNis (h) x [a] <0.1 <0.1 <0.1 TC =31 K (000) [00 I] [7]
Gd2In (h)
GdAu2 (t)
x[f]
x [a]
<0.1
<0.1
< 0.1
<0.1
<0.1
<0.1
Tc = lOOK
TN = 50 K (10)
>100 K: he1.FM [8]
<100 K: (00 t)
[9] ~
z
GdNi282C (t) x [a] <0.1 < 0.1 <0.1 TN =20K (0.5500) >14 K: [01 0) o
x, d indicate the ~-ray

<14K: [Oyz) (11)
or J!ilatometric method. Note: < means that the absolute value is smaller than this value. which is about the resolution of the experimental
§z
technique. (c). (h), (I), (0) indicate the crystal system (£ubic. hexagonal, !etragonal, Qrthorhombic). In addition Te(N), the propagation vector and the direction of the
magnetic moment are tabulated.
~
References for magnetostriction measurements: [a) this work. [b] du Tremolet de Lacheisserie (1988), [c)larosz et aI. (2000), [d) Espeso et al, (1994). [e] Taylor et al.
(2000), [f] Gratz and Lindbaum (1998). ~
References for magnetic properties: [I) Kaplan et al, (1973); Burd and Lee (1977), [2] Merlo et aI. (1998); Javorsky et al. (1995), (3) Blanco et al, (1992), [4] Buschow
(1977); lesser and Clad (1986), (5) Parsons et aI. (1998); Taylor et al, (2000), [6] Stalniski et al. (1979), [7] Franse and Radwanski (1993); Mulders et al. (2000). [8] lee
et aI. (1996), [9] Ravot et aI. (1993), [10] Tung et al. (1996). (11) Detlefs et al, (1996); Tomala et al, (1998). I
...,
U.
-.I
358 A. LINDBAUM and M. ROTIER
interactions, reflected in the high ferromagnetic ordering temperature of 190 K, but the
associated magnetoelastic effects are smaller than 10- 4.
Gd5(Sio.IGeO.9)4 is one representative of the Gd5(SixGel-x)4 compounds, where a
magnetic transition is not only connected with a giant magnetostriction of the lattice
parameters, but also with an instability of other structural parameters. Furthermore this
magnetostructural transition can be induced reversibly by a magnetic field and is connected
with a giant magnetocaloric effect (Morellon et al. 2000; Morellon et al. 1998a). This
example shows that the measurement of the spontaneous magnetostriction could be very
useful for finding systems showing magnetostructural transitions and giant magnetocaloric
effects.
What is not shown in the tables, are spontaneous distortions of the crystal symmetry,
which are usually very small (i.e. < 10- 4) and have only been observed in cubic systems,
where the detection of symmetry distortions is easier. To our knowledge the largest
symmetry breaking effect has been observed for cubic GdZn by Rouchy et al. (1981),
namely a tetragonal distortion of (tll/ 1)001 ::::: -3.7 x 10-4 (see section 5).
One of the maybe most interesting and unexpected observations concerning sponta-
neous magnetoelastic effects in Gd compounds are the large magnetovolume effects,
ranging from (~: )mag = +5.0 x 10- 3 in pure Gd metal to (~: )mag = -6 x 10-3 in
Gd5(Sio.1 Geo.9k The size of the magnetovolume effect in pure Gd is comparable to typ-
ical systems with Fe or Co, where the observed positive magnetovolume effects are asso-
ciated with the itinerant character of the Fe or Co moments. In all Gd systems, presented
in this chapter and showing pronounced magnetovolume effects (i.e. absolute value larger
than 0.5 x 10- 3), these effects are always positive (only with the exception of GdAh and
Gd5(Sio.1 GeO.9)4). This suggests that the polarization of the conduction electrons or the d-
electrons of partner atoms like Ni, induced by the molecular field of the Gd moments, plays
an important role for the magnetovolume effects in Gd systems. This is also supported by
the fact that the largest positive magnetovolume effects are observed in ferromagnetic sys-
tems, where the Gd molecular field inducing a polarization of the s, p or d electrons, is
largest. As an example, the contribution of the induced itinerant moment can be demon-
strated by substituting Cu for Ni in GdNi: by replacing 30% of the Ni atoms by Cu, neither
the type of the magnetic ordering (ferromagnetic), nor the Curie temperature is changed,
but the magnetovolume effect is reduced from + 1.2 x 10- 3 in GdNi to +0.6 x 10- 3 in
GdNio.7CUO.3, because, in contrast to the Cu d-electrons, the Ni d-electrons can be polar-
ized by the Gd molecular field. A second example, which demonstrates not only the role of
an induced Ni moment but also of the type of magnetic ordering, is the comparison of the
antiferromagnetic GdCuz with the isostructural, but ferromagnetic Gd(Cuo.gNio.zh. In the
latter the magnetovolume effect is almost four times larger. However, one should not for-
get about the large negative magnetovolume effects in Gd5(Sio.1 GeO.9)4 and GdA}z. In the
case of GdA}z the large negative magnetovolume effect has to be attributed to the volume
dependence of the (indirect) Gd-Gd exchange interaction since an induced itinerant mag-
netic moment should lead to a positive magnetovolume effect. This means that not only
an itinerant magnetic moment, but also the volume dependence of the (indirect) Gd-Gd
exchange interaction can lead to pronounced magnetovolume effects> 10- 3. In the case
of Gds(Sio.1 Geo.9)4 the magnetostriction is connected with a magnetostructural transition
and the large negative magnetovolume effect is probably due to the rearrangement of the
atoms in the unit cell.
Finally, we would like to point out the importance of investigations of the field-
induced magnetostriction in Gd compounds. Such investigations are very important for
a quantitative analysis of the spontaneous magnetostriction, which has for instance been
shown by the studies on GdCu2. The lack of systematic studies of the field-induced
magnetostriction in Gd compounds may be one reason why only in a few cases a
quantitative description of the spontaneous magnetoelastic effects in Gd compounds has
been performed.
Acknowledgements
This work has been supported by the Austrian Academy of Sciences (APART 10739), by
the Austrian Science Fund FWF (Project P14932), and by the Deutsche Forschungsge-
meinschaft DFG (SFB 463). Further we would like to thank E. Gratz (TU Vienna) for
fruitful discussions.
References
Abell, J.S., JX Boucherle, R.Osborn, B.D. Rainford Borombaev, M.K.. R.Z. Levitin. A.S. Markosyan,
and J. Schweizer. 1983. J. Magn. Magn. Mat. 31- VA Reimer, A.V. Sinitsyn and Z. Smetana, 1987.
34,247. Z. Sov. Phys. JETP 66. 866.
Andreev, A.• P. Javorsky and A. Lindbaum, 1999. Jour- Borombaev, M.K .• and A.S. Markosyan, 1987. Fiz.
nal of Alloys and Compounds 290, 10. Met. MetaJloved. 63.714.
Andreev, A.V., 1995. in: Handbook of Magnetic Mate- Bouvier. M.• P. Lethuillier and D. Schmitt, 1991. Phys.
rials. vol. 8. ed. K.H.J. Buschow (Elsevier Sci. Pub.) Rev. B 43, 13137.
p.59. Burd, I., and E.W. Lee. 1977. I. Phys. C 10,4581.
Barron, T.H.K., 1998, in: Thermal Expansion of Solids. Burzo, E.• A. Chelkowski and H. Kirchmayr, 1990, in:
vol. 1-4. ed. e.Y. Ho. CINDAS Data Series on Ma- Landolt-Boernstein Group III. vol, 19d2. ed. H.PJ.
terial Properties (ASM International) ch, I, p. I. Wijn (Springer. Berlin. Heidelberg. New York).
Barron, T.H.K.• I.G. Collins and G.K. White. 1980. Buschow, K.HJ.• 1977, Rep. Prog. Phys. 40. 1179.
Adv. Phys. 29. 609. Buschow, K.HJ.• 1980. in: Ferromagnetic Materials.
Belger. A.• U. Jaenicke-Rossler. D. Lipp, B. Wehner. vol. I, ed. E.P. Wohlfarth (Elsevier Sci. Pub.) p. 297.
P. Paufter and G. Behr, 1998. Physica C 306.277. Cable. ss«. and E.O. Wollan. 1968. Phys. Rev. 165.
Bialic, D., R. Kruk, R. KmieC and K. Tomala, 1997, 733.
Journal of Alloys and Compounds 257, 49. Callen. E.. 1%8, J. Appl. Phys. 39. 519.
Blanco. J.A .• 1.1. Espeso, I. Garcfa-Soldevilla, J.C. Callen. E., and H.B. Callen, 1963, Phys. Rev. 129, 578.
Gomez-Sal, M.R. Ibarra. C. Marquina and H.E. Fis- Callen. E.• and H.B. Callen. 1965, Phys. Rev. 139,
cher. 1999. Phys. Rev. B 59. 512. A455.
Blanco. J.A .• D. Gignoux and D. Schmitt. 1991, Phys. Casters, A.• D. Gignoux and J.e. Gomez-Sal, 1980. I.
Rev. B 43.13145. Solid State Chern. 31. 197.
Blanco, J.A .. J.e. Gomez-Sal, I. Rodrfguez-Fernandez, Castets, A., D. Gignoux, I.C. G6mez-Sal and
D. Gignoux, D. Schmitt and J. Rodriguez-Carvajal. E. Roudaut, 1982. Solid State Commun. 44,1329.
1992, J. Phys.: Condens. Matter 4, 8233. Clark, A.E., 1980. in: Ferromagnetic Materials, vol. I.
Blazina, Z.• B. Sorgic and A. Drasner, 1999, J. Phys.: ed. E.P. Wohlfarth (Elsevier Sci. Pub.• Amsterdam.
Condens. Matter 11. 3105. The Netherlands) p. 53 I.
Bober, I.-L.. S. Pecbev, B. Chevalier and B. Darriet, Clark. A.E.. B.P. DeSavage and R. Bozorth, 1%5.
1998. Journal of Alloys and Compounds '1.67, 136. Phys. Rev. 138. A216.
Bodriakov, V.Y.• A.A. Povzner and SA Nikitin, 1998. Coey, I.M.D.• V. Skumryev and K. Gallagher. 1999.
Eur. Phys. I. B 4. 441. Nature 401. 35.
360 A. LINDBAUM and M. norrss
Dan'kov, S.Y., A.M. Tishin, V.K. Pecharsky and Gratz, E., and A. Lindbaum, 1994, J. Magn. Magn.
K.A. Gschneidner Jr., 1998, Phys. Rev. B 57, 3478. Mat. 137, 115.
de Jesus, V.L.B., I.S. Oliveira, P.C. Riedi and Gratz, E., and A. Lindbaum, 1998, J. Magn. Magn.
A.P. Guimaraes, 2000. J. Magn. Magn. Mat. 212, Mal. 177-181, 1077.
125. Gratz, E., A. Lindbaum and P. Pototschnig, 1999b, J.
de Reotier, P.O., and A. Yaouanc, 1997, J. Phys.: Con- Magn. Magn. Mal. 1~197, 286.
dens. Matter 9, 9113. Gratz, E., and C.A. Poldy, 1977, Phys. Stat. Sol. (b) 82,
Debray, 0.,1973, Journal of the Less-Common Metals 159.
30,237. Grechnev, G.E., A.S. Panfilov, LV. Svechkarev, K.H.J.
Debray, O.K., W.E. Wallace and E. Ryba, 1970, J. Buschow and A. Czopnik, 1995, Journal of Alloys
Less-Common Met. 22,19. and Compounds 226, 107.
Detlefs, C., A.I. Goldmann, C. Stassis, P.e. Canfield, Hernando, A., J.M. Rojo, J.C. G6mez-Sal and
B.K. Cho, J.P. Hill and D. Gibbs, 1996, Phys. Rev. J.M. Novo, 1996, J. Appl. Phys. 79, 4815.
B 53, 6355. Hilscher, G., 2001, unpublished.
Doerr, M., M. Rotter, M. El-Massalami, S. Sinning, Hulliger, F., and F. Stucki, 1978, Int. Phys. Conf. Ser.
H. Takeya and M. Loewenhaupt, 2002, J. Phys.: 37,92.
Condens. Matter (in press).
Janak, J.F., and A.R. Williams, 1976, Phys. Rev. B 14,
Dolejsi, D.A., and C.A. Swenson, 1981, Phys. Rev. B
4199.
24,6326.
Jarosz, J., E. Talik, T. Mydlarz, J. Kusz, H. Bohm and
du Tremolet de Lacheisserie, E., 1988, J. Magn. Magn.
A. Winiarski, 2000, J. Magn. Magn. Mat. 208,169.
Mat. 73, 289.
Javorsky, P., L. Havela, V. Sechovsky, H. Michor and
Dwight, A.E., R.A. Conner and J.W. Donwey, 1965,
K. Jurek, 1998. Journal of Alloys and Compounds
Acta Crystallogr. 18, 835.
264,38.
Dwight, A.E., J.W. Downey and R.A. Conner, 1967,
Javorsky, P., N. Tuan, M. Divis, L. Havela, P. Svo-
Acta Crystallogr. 22,745.
Engdahl, G., 1999, Handbook of Giant Magnetostric-
boda. V. Sechovsky and G. Hilscher, 1995, J. Magn.
Magn. Mat. 140-144, 1139.
tive Materials (Academic Press, London).
Jee, e.S., C.L. Lin, T. Mihalisin and X.Q. Wang, 1996,
Espeso, J.I., J. Rodriguez-Fernandez. J.e. Gomez-Sal
J. Appl. Phys. 79, 5403.
and J.A. Blanco, 1994, IEEE Transactions on Mag-
Jensen, J., and A.R. Mackintosh, 1991, Rare Earth
netics 30 (2), 1009.
Magnetism (Clarendon Press, Oxford).
Fisher, I.R., Z. Islam and P.e. Canfield, 1999, J. Magn.
Jesser, R., and R. Clad, 1986, J. Magn. Magn. Mat. S4-
Magn. Mat. 202, I.
57,710.
Fontcuberta, J., A. Seffar, A. Hernando, J.e. G6mez-
Sal and J.M. Rojo, 1997, J. Appl. Phys. 81, 3887. Kalychak, Y.M., V.L Zaremba. V.M. Baranyak,
Franse, U.M., and R.J. Radwanski, 1993, in: Hand- P.Y. Zavalii, V. Bruskov, L. Sysa and O. Dmytrakh,
book of Magnetic Materials, vol. 7, ed. K.H.J. 1990, Inorg. Mater. 26, 74.
Buschow (Elsevier, Amsterdam) p. 307. Kaplan, N., E. Dormann, K.H.J. Buschow and
Frey, E., F. Schwabl, S. Henneberger, O. Hartmann, D. Lebenbaum, 1973, Phys. Rev. B 7, 40.
R. Wlippling, A. Kratzer and G.M. Kalvius, 1997, Kaul, S.N., and S. Srinath, 2000, Phys. Rev. B 62,
Phys. Rev. Lett. 79, 5142. 1114.
Gamari-Seale, H., T. Anagnostopoulos and Kobler, U., A. Hoser, M. Kawakami, T. Chatterji and
J.K. Yakinthos, 1979, J. Appl. Phys. SO,434. J. Rebizant, 1999a, J. Magn. Magn. Mater. lOS, 343.
Gignoux, D., and J.e. Gomez-Sal, 1976, J. Magn. Kobler, U., D. Hupfeld, W. Schnelle, K. Mattenberger
Magn. Mal. 1,203. and T. Brockel, 1999b, J. Magn. Magn. Mat. lOS,
Gignoux, D., P. Morin and D. Schmitt, 1991, J. Magn. 90.
Magn. Mat. 102,33. Kobler, U., R.M. Mueller, W. Schnelle and K. Fischer,
Gratz, E., E. Goremychkin, M. Latroche, G. Hilscher, 1998, J. Magn. Magn. Mater. 188,333.
M. Rotter, H. MUller, A. Lindbaum, H. Michor, Komarovskaja, L.P., R.V. Skolozdra and LV. Filatova,
V. Paul-Boncour and T. Fernandez-Diaz, 1999a. J. 1983, Dop. Akad. Nauk Ukr. RSR A45 (I), 82.
Phys.: Condens. Matter 11, 7893. Koyanagi, A., Y. Yoshida. Y. Kimura. R. Settai,
Gratz, E., A. KOllar, A. Lindbaum, M. Mantler, K. Sugiyama and Y. Onuki, 1998, J. Phys. Soc. Jpn.
M. Latroche, V. Paul-Boncour, M. Acet, C. Barner, 67,2510.
W.B. Holzapfel, V. Pacheco and K. Yvon, 1996, J. Kusz, J., H. Bohm and E. Talik, 2000, J. Appl. Cryst.
Phys.: Condens. Matter 8, 8351. 33,213.
Latroche, M., V. Paul-Boncour and A. Percheron- P.D. de Reotier, A. Yaouanc, K.HJ. Buschow,
Guegan, 1993, Z. Phys. Chern. 179,261. F. Kayzel and A. Menovsky, 2000, Physica B 289-
Latroche, M., V. Paul-Boncour, A. Percheron-Guegan 290,451.
and J.C Achard, 1990, J. Less-Common Met. 161, Nagamiya, T., 1967, Solid Slate Phys. 20, 305.
L27. Nigh, H.E., S. Legvold and F.H. Spedding, 1963, Phys.
Levin, E.M., V.K. Pecharsky and K.A. Gschneidner Jr., Rev. 132, 1092.
1999, Phys. Rev. B 60, 7993. Ohashi, M., T. Kaneko and S. Miura, 1975, J. Phys.
Levin, E.M .. Y.K. Pecharsky, K.A. Gschneidner Ir. and Soc. Ipn. 38, 588.
P. Tomlinson, 2000, 1. Magn. Magn. Mater. 210, Ohta, S., T. Kitai and T. Kaneko, 1995, J. Phys.: Con-
181. dens. Matter 7, 6809.
Lin, C.L., T. Yuen and T. Mihalisin, 1996, Phys. Rev. Oesterreicher, H., 1977, I. Less-Common Met. 55, 131.
B 54,9254. Pacheco, J.V., K. Yvon and E. Gratz, 1998, Z. Kristal-
Lindbaum, A, 1994, Ph.D. thesis, Technische Univer- logr. 213, 510.
sitlit Wien. Palenzona, A., 1968, J. Less-Common Met. 16,379.
Lindbaum, A, E. Gratz and S. Heathman, 2002, Phys. Parsons, MJ., J. Crangle, K.U. Neumann and K.R.A.
Rev. B 65, 134114. Ziebeck, 1998,1. Magn. Magn. Mat. 184, 184.
Lindbaum, A., J. Hafner and E. Gratz, 1999, I. Phys.: Paulose, P.L., S. Patil, R. Mallik, E. Sampathkumaran
Condens. Matter 11, 1177. and V. Nagarajan, 1996, Physica B 223&224, 382.
Lindbaum, A., 1. Hafner, E. Gratz and S. Heathman,
Pecharsky, V.K., and K.A. Gschneidner Jr., 1997a,
1998, J. Phys.: Condens. Matter 10, 2933.
Phys. Rev. Lett. 78,4494.
Lindbaum, A., S. Heathman, G. Kresse, M. Rotter,
Pecharsky, V.K., and K.A. Gschneidner Jr., 1997b,
E. Gratz. A. Schneidewind, G. Behr, K. Litfin,
Appl. Phys. Lett. 70, 3299.
T. LeBihan and P. Svoboda, 2000, 1. Phys.: Con-
Pecharsky, Y.K., and K.A. Gschneidner Jr., 1997c, J.
dens. Malter 12, 3219.
Magn. Magn. Mater. 167,1179.
Luong, N.H., and U.M. Franse, 1981, Phys. Slat. Sol.
Pecharsky, V.K., and K.A. Gschneidner Jr., 1997d, J.
66,399.
Alloys Compd. 260, 98.
Luong, N.H., U.M. Franse and T.D. Hien, 1985, J.
Pecharsky, Y.K., and K.A. Gschneidner Jr., 1999, 1.
Phys. F.: Met. Phys. IS, 1751.
Magn. Magn. Mater. 200, 44.
Lynn, J.w., S. Skanthakumar, Q. Huang, S.K. Sinha,
Poldy, CA., and H. Kirchmayr, 1974, Phys. Slat. Sol.
Z. Hossain, L.C. Gupta, R. Nagarajan and C. Go-
(b) 65, 553.
dart, 1997, Phys. Rev. B 55, 6584.
Mallik, R., and E. Sampathkumaran, 1998, Phys. Rev. Pourarian, F., 1980,1. Phys. Chern. Solids 41, 123.
B 58,9178. Ravot, D., O. Gorochov, T. Roisnel, G. Andre,
Massalami, M., 2002, private communication. F. Bourre-Vigneron and J.A. Hodges, 1993, Int. 1.
McAlister, S.P., 1984, J. Phys. F: Met. Phys. 14,2167. Mod. Phys. B 7, 818.
McEwen, K.A., 1978, in: Handbook on the Physics and Rotter, M., M. Doerr, M. Loewenhaupt, A. Lindbaum,
Chemistry of Rare Earths, vol. I, eds K.A. Gschnei- H. MUller, J. Enser and E. Gratz, 2001a, J. Magn.
dner Jr. and L.R. Eyring (North-Holland, Amster- Mag. Mat. 236, 267.
dam) p. 411. Rotter, M., M. Doerr, M. Loewenhaupt and P. Svoboda,
Merlo, F., S. Cirafici and F. Canepa, 1998, Journal of 2002, J. Appl. Phys. 91, 8885.
Alloys and Compounds 266, 22. Rotter, M., A. Lindbaum, E. Gratz, H. MUller,
Morellon, L., P.A. Algarabel, M.R. Ibarra, J. Blasco, G. Hilscher, H. Sassik, H.E. Fischer,
B. Garcia-Landa, Z. Arnold and F. Albertini, 1998a, M.T. Fernandez-Diaz, R. Arons and E. Seidl,
Phys. Rev. B 58, RI4721. 2000a, 1. Magn. Magn. Mat. 214, 281.
Morellon, L., J. Blasco, P.A Algarabel and Rotter, M., M. Loewenhaupt, M. Doerr, A. Lindbaum
M.R. Ibarra, 2000, Phys. Rev. B 62, 1022. and H. Michor, 200lb, Phys. Rev. B 64, 014402.
Morellon, L., J. Stankiewicz, B. Garcia-Landa, P.A. AI- Rotter, M., H. MUller, E. Gratz, M. Doerr and
garabel and M.R. Ibarra, I998b, Appl. Phys. Lett. M. Loewenhaupt, 1998, Rev. Sci.Instrum. 69, 2742.
73,3462. Rotter, M., A. Schneidewind, M. Loewenhaupt, M. Do-
Morin, P., and D. Schmitt, 1990, in: Ferromagnetic Ma- err, A. Stunault, A. Hiess, A. Lindbaum, E. Gratz,
terials, vol. 5, eds K.HJ. Buschow and E.P. Wohl- G. Hilscher and H. Sassik, 2000b, Physica B 284-
farth (Elsevier Sci. Pub.) p. I. 288,1329.
Mulders, AM., CT. Kaiser, P.C.M. Gubbens, A. Am- Rouchy, 1., P. Morin and E. du Tremolet de Lacheis-
ato, F.N. Gyax, M. Pinkpank, A. Schenck, serie,1981,J.Magn.Magn.Mal.23,59.
362 A. LINDBAUM and M. sorrss
Roy. J.L .• J.M. Moreau. D. Paccard and E. Parthe, G. Ruffino. C.A. Swenson and G.K. White. 1998.
1978. Acta Crystal1ogr. B 34. 9. Thermal expansion of solids. CINDAS Data Series
Siegrist. T.• H.W. Zandbergen, RJ. Cava. U. Krajew- on Material Properties. vol. 1-4. ed. c.Y. Ho (ASM
ski and w.F. Peck. 1994. Nature 367. 254. International).
Staliriski, B.• A. Czopnik, N. lIiew and T. Mydlarz, Taylor. R.H .• and B.R. Coles. 1975. J. Phys. F 5.121.
1979. Journal de Physique CS. 149. Tomala, K.. J.P. Sanchez. P. Vulliet and P.C. Canfield.
Stampe, P.A.. X.Z. Zhou. H.P. Kunkel. J.A. Cowen 1998. Phys. Rev. B 58. 8534.
and G. Williams. 1997. J. Phys.: Condens. Matter Touloukian, Y.S.• R.K. Kirby. R.E. Taylor and P.D. De-
9.3763. sai. 1976. in: Thennophysical Properties of Matter
Storm, A.R .• and K.E. Benson. 1%3. Acta CrySI. 16. (Thermal Expansion). vol. 12 (Plenum Publishing.
701. New York. Washington).
Svoboda. P.• M. Doerr. M. Loewenhaupt, M. ROller. Tung. L.D .. K.H.J. Buschow, U.M. Franse and
T. Reif, F. Bourdarot and P. Burlet, 1999. Europhys. N.P. Thuy. 1996. J. Magn. Magn. Mal. 154.96.
Lett. 48. 410. van Vucht, J.H.N.• FA Kuijpers and H.C.A.M. Brun-
Szytula, A.• 1991. in: Handbook of Magnetic Mate- ing. 1970. Philips Res. Rep. 25. 133.
rials. vol. 6. ed. K.HJ. Buschow (North-Holland, Walhne, R.E .• and W.E. Wallace. 1%4. J. Chern. Phys.
Amsterdam) p. 85. 41. 1587.
Talik, E.• and M. Neumann. 1994. Physica B 193. 207. Wassennan, E.F.. 1990. in: Ferromagnetic Materials.
Talik. E.• and A. Siebarski. 1995. J. Alloys and Com- vol. 5. eds K.HJ. Buschow and E.P. Wohlfarth (El-
pounds223, 87. sevier Sci. Pub.) p. 237.
Taylor. J.W.• H. Capellmann, K.U. Neumann and Webster. P.J.• 1%9. Contemp. Phys. 10.559.
K.R.A. Ziebeck. 2000. Eur. Phys. J. B 16. 233. Yaouanc, A.. P.D. de Reotier, P.C.M. Gubbens,
Taylor. R.E .• T.H.K. Barron, A. Cezairliyan. P.S. Gaal, A.M. Mulders. F.E. Kayzel and JJ .M. Franse, 1996.
T. Hahn. C.Y. Huang. R.K. Kirby. H.A. McKinstry. Phys. Rev. B 53. 350.
S.T. McKinstry. A.P. Miiller. B.D. Rothrock. Zieglowski, J•• 1988, Ph.D. thesis. Universitat zu Koln.
Author Index
Abe, E. 14, 15,71 Akinaga, H., see Yamada, M. 13

Abe, E., see Ohno, H. 74 Alam, M.A., see Dugdale, S.B. 230, 240
Abe, E., see Zhao, 1.H. 10 Alameda, 1.M., see Dieny, B. 163
Abe, H., see xue. H. 273 Albertini, E, see Morellon, L. 309, 336, 337, 339,
Abe, H., see Shen, A. 9, 15, 16 358
Abe, T., see Munekata, H. 36 Alejandro, G. 175
Abell, J.S. 316 Algarabel, P.A., see de Teresa, J.M. 176, 178
Abernathy, C.R., see Overberg, M.E. 13 Aigarabel, P.A., see Garda-Landa, B. 182
Abernathy, C.R., see Theodoropolpu, N. 14 Aigarabel, P.A., see Ibarra, M.R. 175, 176
Abernathy, D.L., see Detlefs, C. 261, 262 Aigarabel, P.A., see Morellon, L. 309, 336-339,
Abolfath, M. 25,49,52,54,55,57,58 356,358
Abrahamsen, A.B., see Eskildsen, M.R. 265, 269, Ali, M. 109
273,274 Aliaga-Guerra, D., see Bud'ko, S.L. 278, 279
Abrahamsen, A.B., see Gammel, P.L. 223, 279 Aliyev, M.l. 5, 14
Abrarnovich, A.I. 178, 179 Allen, P.B. 229
Abrikosov, A.A. 209,214,272, 286 Alieno, E. 216, 217, 225, 226, 242, 246, 260, 263,
Acet, M., set' Gratz, E. 317 264
Achard, J.C., see Latroche, M. 317 Alieno, E., see Bonville, P. 213, 270
Adachi, G., see Sakai, T. 205, 273, 274 Alieno, E., see Feiner, 1. 213, 216, 279
Adhikari, T. 14 Alieno, E., see Godart, C. 220, 242, 260
Adroja, D.T., see Tomy, c.v. 256, 258 Alieno, E., see Nagarajan, R. 288
Aegerter, C.M., see Paul, D. McK. 258, 269, 276 Alieno, E., see Rams, M. 221
Afalfiz, L., see Tomy, C.Y. 256, 259 Alieno, E., see Tominez, E. 216, 219, 220, 242
Afalfiz, L.A., see Tomy, C.Y. 258 Allenspach, P. 245
Aharony, A. 208 Allenspach, P.,see Gasser, U. 208, 222, 241, 245,
Ahilan, K., see Saxena, 5.5. 209 269
Ahmet, P., see Kuwahara, S. 13, 14 Allenspach, R., see Back, C.H. 174
Ahmet, P., see Matsumoto, Y. 78 Allenspach, R., see Weber, W. 114
Akai, H.43 Almesh, N. 19
Akai, H., see Kamatani, T. 76, 78 Alp, E.E., see Dunlap, B.D. 256
Akiba, N. 65, 68, 69 Al'tshuler, B.L. 53, 60
Akiba, N., see Chiba, D. 65, 66 Alves, E 172
Akiba, N., see Ohno, H. 68, 69 Amann, A., see Rathnayaka, K.D.D. 227, 278
Akiba, N., see Shen, A. 7-9, 25, 54, 57, 58, 61, 62 Amaral Jr., M.R., see EI Massalami, M. 219, 220,
Akiba, N., see Sugawara, Y. 32 242, 247
Akimitsu, J., see Ekino, T. 259 Amato, A., see Le, L.P. 235
Akimitsu, J., see Nagamatsu, J. 202, 203 Amato, A., see Mulders, A.M. 322, 357
Akimitsu, J., see Uehara, M. 216, 217, 264 Amaya, K., see Shimizu, K. 231
Akimoto, R., see Saito, H. 13 Ambrose, T.M., see Park, Y.D. 74
Akinaga, H. 13, 14, 78 Amici, A. 261, 262, 266
Akinaga, H., see Ofuchi, H. 14 Anagnostopoulos, T., see Gamari-Seale, H. 323
Akinaga, H., see Okabayashi, J. 79 Andersen, N.H., see Chang, L.J. 242
363
364 AUTHOR INDEX
Andersen, N.H., see Eskildsen, M.R. 265, 267. Arons. R.. see Rotter, M. 346, 347. 356
269,273-276 Arrott, A. 23
Andersen, N.H., see Gammel, P.L. 223, 267, 277, Anita, C .• see Andreone, A. 215
279 Asahi, H.• see Hashimoto. M. 10. 14
Andersen, N.H., see Nergaard, K. 225 Asahi, H., see Kanamura, M. 73
Anderson, P.W. 210, 213 Asami, K., see Kanamura, M. 73
Ando, K.4O Asamitsu, A., see Kimura, T. 181-183
Ando, K., see Hayashi, T. 62. 63 Asamitsu, A., see Kuwahara, H. 178
Ando, K.• see Saito. H. 13 Ashburn. J.R., see Wu, M.K. 208
Ando, K., see Shimizu, H. 4 I Ashcroft, N. W. 203
Ando, K., see Shioda, R. 18 Ashcroft, N.W, see Richardson, C.F. 279
Ando, K., see Szczytko, J. 19 Askenazy, S., see Respaud, M. 179
Ando, M. 38 Asklund, H.• see Sadowski, 1. 9, 16.77
Andre, G., see Ravot, O. 324, 357 Atkinson, WA., see Jungwirth. T. 49, 53, 55,60,
Andrearczyk, T., see Ferrand, O. 5, 49, 54, 60 66, 74
Andreev, A. 325, 327. 356 Ausloos, M., see Gabovich, A.M. 238
Andreev, A.V. 95,310,322 Awano, H. 151
Andreone, A. 215, 219, 241 Awschalom, D.O., see Beschoten, B. 41, 47
Andres. K., see Matthias, B.T. 202 Awschalom, D.O., see Harris. J.G.E. 26
Anh, O.T.N.,see Due, N.H. 140. 142, 157, 158 Awschalom, D.O., see Johnston-Halperin, E. 71
Ann. J.M. 207 Awschalom, D.O., see Kawakami, R.K. 5, 10,63,
Annett, J.F., see Gabovich, A.M. 238 75
Ansaldo, E.A.• see Bernhard, C. 213 Awschalorn, D.O., see Kikkawa, J.M. 75, 79
Antropov, V.P.• see Belaschenko, K.O. 207 Awschalom, D.O., see Malajovich, I. 79
Antropov, V.P., see Kortus, J. 244 Awschalom, D.O .• see Ohno, Y. 70. 71
Aoki, O. 214 Awschalom, D.O., see Salis, G. 79
Appel, J., see Fay, O. 213 Awschalom, D.O., see Wolf, S. 4
Appl, S., see Lee. WH. 251 Azaf, U .• see Feiner, I. 241. 255
Aragwal, P., see Saxena, S.S. 209 Azbel', M. Ya., see Lifshits, I.M. 258
Arai, K.1. 186, 189
Arai, K.I.. see Hayashi, Y. 117. 119-121. 133
Arai, K.I., see Honda, T. 119, 133. 186, 187 Baberschke, K., see Davidov, O. 216
Arai, K.I.. see Kikuchi, S. 132. 133 Back, C.H. 174
Arai, K.I., see Tanaka. T. 132 Back. C.H.• see Weber. W. 114
Aranson, I., see de Wilde, Y. 266. 277 Baeumer, M., see Schneider, J. 19
Aranson, I., see Metlushko, V. 240 Bagchi, S.N., see Hossain, Z. 242, 248, 253
Arata, l. 47, 63 Baggio-Saitovitch, E .• see Bourdarot, F.218
Arata, I., see Ohno, Y. 63, 64, 73 Baggio-Saitovitch, E., see EI Massalami, M. 223
Areas, J. 172 Baggio-Saitovitch, E., see Sanchez, O.R. 226, 256,
Areiszewska, M., see Osinniy, V. 33 266
Arimoto, H., see Matsuda, Y.H. 37,38 Baggio-Saitovitch, E.M. 223, 224, 243
Arimura, H.• see Tanaka, T. 132 Baggio-Saitovitch, E.M., see Bud'ko, S.L. 216,
Arisawa, S. 219 217,271, 278, 279
Armstrong, WO. 173 Baggio-Saitovitch, E.M., see EI Massalami, M.
Arnaudas, J.I. 159.160 242,278
Arnaudas, J.I., see Ciria, M. 106. 159 Baggio-Saitovitch, E.M., see Fontes, M.B. 213
Arnaudas, J.I.• see de la Fuente, C. 162 Baines, C., see Mulders, A.M. 275
Arnaudas, J.I.• see del Moral, A. 159-162 Bak-Misiuk, J., see Sadowski, J. 5, 9,15,16,26,
Arnold, Z., see de Teresa, J.M. 178 77
Arnold, Z., see Morellon, L. 309, 336, 337, 339. Bakker, K., see Brabers, J.H.V.J. 272
358 Balakrishnan, G., see Garcia-Landa, B. 182
Arnoult, A., see Haury, A. 5,49, 54 Balakrishnan, G., see Tomy, C.V. 256, 259
ArnouIt, A., see Kossacki, P. 49, 74 Balandin, A., see Vrijen, R. 79
Aronov, A.G., see Al'tshuler, B.L. 53, 60 Balbashov, A.M., see Demin, R.V. 178
AUTHOR INDEX 365
Balbashov, A.M., see Kadomtseva, A.M. 180 Bean, cr, see Meiklejohn, W.H. 230. 231, 234,
Balbashov, A.M., see Mukhin, A.A. 181 241
Balbashov, A.M., see Popov, Yu. F. 179, 180 Beatrice, C; see Pasquale, M. 119
Ball, P.4 Becker, R. 95
Ballentine, C.A., see O'Handley, RC. 109 Becla, P., see Szczytko, J. 41
Baltensperger, W. 211 Bedair, S.M., see Reed, M.L. 14, 77
Bancroft, N.J., see Paul, D. McK. 258 Bednorz, J.G. 207
Barabara, B.. see Ferrand, D. 27 Begaerts, R., see van Esch, A. 5, 26, 30, 34, 55
Baran, M., see Szymczak, R 234, 235, 240 Behr, G. 219, 225
Baran, M., see Zuberek, R 154 Behr, G., see Belger, A. 335
Barandiaran, J.M., see Gutierrez, 1. 170 Behr, G., see Billerlich, H. 210, 287, 288
Barandiaran, J.M., see Hernando, A. 94 Behr, G., see Drechsler, S.-L. 229, 234
Barandiaran, J.M., see Slawska-Waniewska, A. Behr, G., see Lindbaum, A. 345
169 Behr, G., see von Lips, H. 260-262
Baranyak, V.M., see Kalychak, Y.M. 331 Belaschenko, K.D. 207
Belashenko, K.D., see Kortus, 1. 244
Barash, Y.S. 284, 285
Belger, A. 335
Barbara, B., see Feiner, I. 213, 216
Belger, A., see Behr, G. 225
Barbara, B., see Ferrand, D. 5,49, 54, 60
Belger, A., see Jaenike-Roessler, U. 277
Barbashov, M.N., see Masterov, V.F. 19
Belitz, D. 48
Barber, B.P., see Eskildsen, M.R. 267, 269, 276
Belov, K.P. 126
Barber, B.P., see Gammel, P.L. 273
Belson, H., see Clark, A.E. 94
Bardeen,J.203,227,272
Beltran, M., see Koksharov, Yu.A. 168
Bardyszewski, W., see Kossacki, P. 49, 74
Ben Youssef, 1., see Due, N.H. 168
Bardyszewski, W., see Szczytko, 1. 41, 47
Ben Youssef, J., see Le Gall, H. 111, 143, 147, 148
Baril, L. 110
Bender, H., see Akinaga, H. 14
Barkov, T.L .. see Vinnikov, L.Ya. 260, 264, 273
Bender, H., see de Boeck, J. 5, 9
Barner, C., see Gratz, E. 317
Bender, H., see van Esch, A. 10
Baron, T. 5
Bennett, B.R., see Jonker, J.T. 70
Baron, V.V., see Savitskii, E.M. 214
Beno, M., see Dunlap, B.D. 212
Barratt, J.P., see Boothroyd, A.T. 223
Benoit Ii la Guillaume, C. 42, 60
Barron, T.H.K. 311, 313, 314 Benoit Ii la Guillaume, C., see Bhattacharjee, A.K.
Barron, T.H.K., see Taylor, R.E. 311 20,46,47
Bars, 0 .. see Bauer, J. 225 Benson, K.E., see Storm, A.R 345
Barthelemy, A. 93 Berciu, M., see Bhatt, R.N. 48, 60
Barthem, V., see EI Massalami, M. 205, 206 Berciu, M., see Kenett, M.P. 60
Basu, S., see Adhikari, T. 14 Berger, P., see Alieno, E. 225. 226, 260, 263, 264
Basu, S., see Akinaga, H. 13 Berger, P., see Tominez, E. 216, 219, 220, 242
Batlogg, B., see Carter, SA 202, 205, 224 Berger, R 188
Batlogg, B., see Cava, R.I. 202, 205, 220, 223, Bernhard, C. 213
240.242,283 Bernhard, C., see Henn, R.W. 238
Batlogg, B., see Eisaki, H. 231, 240 Bernhoeft, N.R., see Pfleiderer. C. 226, 237
Batlogg, B., see Schon, J.H. 203, 205, 206, 238, Berry, J.1••see Malajovich, I. 79
259 Berry, 1.1.,see Potashnik, SJ. 5, 9, 34, 50, 56, 77
Batlogg, B., see Takagi, H. 215, 230, 241 Beschoten, B. 41, 47
Ball, A.1. 120 Beschoten, B., see Ohno, Y. 70, 71
Bauer, E., see El-Hagary, M. 245, 253 Betz, 1. 94. 103. 106, 119-122. 128, 133, 141,
Bauer, E., see Michor, H. 223. 224, 279, 287 142, 163, 186, 187
Bauer, E.D. 214 Betz, J., see du Tremolet de Lacheisserie, E. 186
Bauer. J. 225 Betz, J., see Due, N.H. 94. 103. 119, 123-127,
Bauernfeind. L. 213 129, 130, 133
Baxter, D.V. 32 Betz, 1., see Givord, D. 120, 133, 141, 163, 165
Beach. R.S. 159 Betz, 1., see Halstrup, B. 187
Beach, RS., see O'Donovan, K.V. 159 Betz, J., see Orsier,E. 188
366 AUTHOR INDEX
Betz, 1.• see Quandt, E. 94.141, 157. 158. 188 Blasius, Th.• see Henn, R.W. 238
Bewley. R.I.. see Boothroyd. A.T. 223 Blazina, Z. 322
Bewley. R.I.• see Cywinski. R. 207 Blinowski, 1. 47, 51, 76
Beyermann, W.P.270 Blount, E.I. 238, 239
Beyermann, W.P.• see Bud'ko, S.L. 267 Blundell, S.1.•see Nagarajan. R. 288
Beyermann, W.P.• see Canfield, P.C. 215. 252. Boaknin, E. 238. 239. 241. 279. 285
267.270 Boatner, L.A.• see Paul, D. McK. 272. 274
Beyermann, W.P., see Cho. B.K. 242. 249. 256, Bober, 1.-L. 322
257 Bochi, G. 113
Beyennann, WP.• see Christianson, A.D. 236 Bodriakov, V.Y.321
Beyermann, WP.• see Lacerda, A. 205, 217. 220. Boebinger, G.S.• see Christianson. A.D. 236
251.289 Bogaerts, R.• see van Esch, A. 10
Beyermann, WP.• see Rathnayaka, K.D.D. 227. Bohm, H., see Jarosz, 1. 326. 327, 357
278 Bohm, H.• see Kusz, 1.352-354. 356
Beyermann, W.P., see Schmiedeshoff, G.M. 205. Bohn, M.• see Tominez, E. 216, 219. 220, 242
206.230 Bolle. C.• see Eskildsen. M.R. 269. 276
Beyermann, WP.• see Yatskar. A. 251. 271. 272 Bolle. C.A.• see Eskildsen. M.R. 267, 276
Bhatnagar, A.K., see Naugle. D.G. 266 Bonville. P. 213. 270
Bhatnagar, A.K., see Rathnayaka, K.D.D. 271
Bonville. P., see Godart, C. 220. 242. 260
Bhatt. R.N. 48, 60
Bonville. P., see Rams. M. 221
Bhatt, R.N.• see Kenett, M.P.60
Boothroyd, A.T. 223. 270
Bhatt. R.N.• see Paalanen, M.A. 49
Borchers.LA. 159
Bhatt. R.N.• see Wolff. P.A.48
Borchers. 1.A.• see Beach. R.S. 159
Bhattacharjee, A.K. 20. 46. 47
Borchers, 1.A.• see Erwin. R.W. 159
Bhattaeharjee. 1.K.• see Lynn. 1.W.220. 226. 242,
Borghs, G.• see Akinaga, H. 14
244.245.247-249.253.256.276
Borghs, G., see de Boeck. 1. 4. 5. 9
Bialic, D. 328. 356
Borghs, G.• see Ofuchi, H. 14
Bin. L.• see Rukang, L. 221
Borghs, G.• see van Esch, A. 5. 10.26.30.34.55
Birgeneau, R.I.• see Aharony, A. 208
Bischof. A.• see Back, C.H. 174
Borornbaev, M.K. 346. 348. 349. 351. 356
Bischof. A.• see Weber. W. 114 Borsa, E. see Sala, R. 243
Bishop. 0.1 .• see Canfield. P.C. 262. 266. 268 Borsa, E. see Suh, B.l. 214
Bishop. 0.1 .• see Eskildsen. M.R. 267. 269, Boselli, M.A.• see Louriero da Silva 62
273-276 Bosselli, M.A. 61
Bishop. 0.1 .• see Gammel. P.L. 223. 267. 273. Boucherle, 1.X.• see Abell. 1.S. 316
277, 279 Bouchilloux, P.• see Claeyssen, E 185. 187. 188
Bishop. 0.1 .• see Kogan. V.G.207 Bourdarot, F. 218
Bishop. 0.1 .• see Yaron, U. 242. 248, 249. 251. Bourdarot, E. see Detlefs, C. 261. 272. 273
270.271 Bourdarot, E. see Svoboda, P. 345
Bither. T.A. 14 Bouree, E. see Michor, H. 288
Bitoh, T.• see Makino. A. 169 Bourgognon, C, see Ferrand, D. 27
Bitterlich, H. 210. 287. 288 Bourlen, P.• see Detlefs. C. 261, 272. 273
Bitterlich, H., see Behr, G. 219 Bourre-Vigneron, E, see Ravot, D. 324. 357
Bitterlich, H.• see Drechsler. S.-L. 229 Bouvier. M. 310
Bitterlich, H.• see laenike-Roessler, U. 277 Boyer, L.L.. see Kortus, 1. 244
Blaha, P.. see Divis. M. 242 Bozorth, R.• see Clark. A.E. 312
Blanco. 1.A. 310. 339-343. 356.357 Bozorth, R.M. 156. 173
Blanco. 1.A.• see Espeso, 1.1. 340--342,357 Bozorth, R.M.• see Matthias. B.T. 205
Blanco. 1.M., see Zuberek. R. 173 Bourgognon, C.• see Ferrand. D. 5. 49. 54. 60
Blasco. 1.• see de Teresa, 1.M. 176. 178 Brabers, 1.H.V.l. 272
Blasco. 1.• see Ibarra, M.R. 175. 176. 184. 185 Brabers, 1.H.V.1.• see Mulder. EM. 269
Blasco. 1.. see Morellon. L. 309. 336-339. 356. Braithwaite. D.• see Aoki, D. 214
358 Braithwaite, D.• see Huxley. A. 211
Blasius. Th.• see Bernhard. C. 213 Braithwaite. D.• see Saxena, S.S. 209
AUTHOR INDEX 367
Brandao, D.E .. see da Rocha, F.S. 205 Buschow, K.H.J., see Grechnev, G.E. 318
Brandt, E.H. 213 Buschow, K.HJ., see Kaplan, N. 316, 357
Braun. H.F. 287 Buschow, K.H.I., see Liu, 1.P. 123
Braun, H.F., see Bauernfeind, L. 213 Buschow, K.HJ., see Mulder, F.M. 269
Braun. H.F., see Dertinger, A. 216, 217, 264, 266 Buschow, K.HJ., see Mulders, A.M. 275, 322, 357
Braun. H.F., see Schmidt, H. 216, 263, 264, 278 Buschow, K.HJ., see Tung, L.D. 330, 357
Braun, H.F., see Wagner, T.A. 231, 285 Bushnell, S.E. III
Brewer, E.G., see Pinkerton. F.E. 168, 173 Butera, A., see Alejandro, G. 175
Brewer, J.H., see Luke, G.M. 212 Butler, WH., see Schultbess, T.C. 44
.w.,
Brill, J see Sonier, J.E. 213 Buzdin, A., see Brison, J.P. 220, 283
Brison, J.-P., see Aoki, D. 214 Buzdin, A.I., see Bulaevskii, L.N. 226
Brison, J.P. 220, 283 Bychkova, M.I., see Savitskii, E.M. 214
Bromberg. L. see Teter. J.P. 191
Brommer, P.E.• see Due, N.H. 96, 114, 115
Cable, J. W. 320, 356
Broto, J.M., see Respaud, M. 179
Calemczuk, R., see Huxley, A. 211
Briicher, E., see Bernhard, C. 213
Callen, E. 310, 312, 314
Briickel, T., see Kobler. U. 309
Callen, E.R. 97, 161
Brum, J., see Abolfath, M. 25. 49, 52, 54, 55. 57,
Callen, H.B., see Callen, E. 310, 312, 314
58
Callen, H.B., see Callen, E.R. 97, 161
Bruning, H.C.A.M., see van Vucht, J.H.N. 322
Campbell, AJ. 220, 242, 259. 267
Bruno, P., see Crepieux, A. 27
Campbell, A.M .• see lames, S.S. 267
Bruskov, V., see Kalychak, Y.M. 331
Campbell, LA. 1I4
Bruynseraede, C., see de Boeck, J. 5. 9
Caneiro, A., see Alejandro, G. 175
Bucher. E., see Ramirez. A.P. 271
Canepa, F., see Cimberle, M.R. 227
Buchgeister, M. 220, 221
Buchgeister, M., see Gasser, U. 241 Canepa, F., see Merlo, F. 326, 357
Buchgeister, M., see Prassides, K. 231, 240 Canfield, P.C. 215, 216, 242, 252, 254, 256-258,
Buckley, R.A., see Batt, AJ. 120 261,262,266-268,270
Bud'ko,S.L.208,216,217,267,271,278,279 Canfield, P.c., see Alieno, E. 216, 217
Bud'ko, S.L., see Canfield, P.C. 215, 216, 252. Canfield, P.C., see Beyermann, W.P. 270
256-258.261,267,270 Canfield, P.C., see Boaknin, E. 238, 239, 241, 279.
Bud'ko, S.L .• see Choi, S.-M. 271 285
Bud'ko, S.L., see Christianson, A.D. 236 Canfield, P.c., see Boothroyd, A.T. 223
Bud'ko, S.L., see Detlefs, C. 261, 272. 273 Canfield. P.C., see Bud'ko, S.L. 208, 267, 278
Bud'ko, S.L.. see EI Massalami, M. 278 Canfield, P.C., see Cheon, K.O. 223,227,229
Bud'ko, S.L.. see Fontes, M.B. 213 Canfield, P.e., see Cho, B.K. 220, 241-243, 245,
Bud'ko. S.L.. see Gammel, P.L. 273 249,254,256,257,260,261,267,269,287
Bud'ko, S.L., see Rathnayaka, K.D.D. 227, 278 Canfield, P.C.• see Choi, S.-M. 271
Bud'ko, S.L., see Sanchez, D.R. 226, 256, 266 Canfield, P.C., see Christianson, A.D. 236
Bud'ko, S.L., see Song, C. 284, 285 Canfield, P.C., see de Wilde, Y. 266, 277
Bud'ko, S.L., see Vinnikov, L.Ya. 260, 264, 273 Canfield, P.c., see Dervenagas, P. 230, 242, 245.
Bud'ko, S.L., see Yatskar, A. 251, 271, 272 255,256
Budraa, N.K., see Yatskar, A. 251, 271, 272 Canfield, P.C., see Detlefs, C. 221, 222, 241, 242,
Buhrman. R.A., see Wolf, S. 4 245,253,254.261.262,272,273,310,335,357
Bukowski. Z., see Dabrowski, B. 181 Canfield, P'C., see Du Mar, A.C. 212
Bulaevskii, L.N. 226 Canfield, P.C., see Dugdale, S.B. 230. 240
Bullock, M., see Dervenagas, P. 242, 256 Canfield, P.c., see Eskildsen, M.R. 265, 267, 269,
Bullock, M., see Kogan, V.G. 207 273-276
Burd, J. 316, 357 Canfield, P.C., see Fisher, I.R. 223, 333, 356
Burlet, P., see Svoboda, P. 345 Canfield, P.C., see Gammel, P.L. 223, 267, 273,
Burzo, E. 339 277, 279
Busbridge, S.c., see Wang, B.W 94 Canfield, P.c., see Goldman, A.1. 233
Buschow, K.HJ. 261, 262, 317, 339, 357 Canfield, P.C., see Hennings, B.D. 260
Buschow, K.HJ.• see Brabers, J.H.VJ. 272 Canfield, P.C., see Hill, J.P. 209
368 AUTHOR INDEX
Canfield. P.C.• see Jacobs. T. 216 Castano, F.I., see Stobiecki, T. 109
Canfield. P.C.• see Johnston-Halperin, E. 209 Castets, A. 343, 356
Canfield. P.e., see Lacerda, A. 205. 217, 220, 251. Castillo. LA.• see EI Massalarni, M. 219, 220, 242,
289 247
Canfield. P.C.• see Le, L.P. 235 Causa. M.T.• see Alejandro, G. 175
Canfield. P.C.• see Lynn. J.W. 216 Cava, R.I. 202. 205. 220. 223. 240. 242. 283
Canfield. P.C., see Matsuda. N. 210 Cava. R.I., see Carter, S.A. 202, 205. 224
Canfield. P.C.• see Mazumdar, Ch. 229 Cava, R.I., see Eisaki. H. 231, 240
Canfield. P.C.• see Metlushko, V. 240 Cava, R.J., see Fisher, LR. 226. 227. 235. 236.
Canfield. P.C.• see Movshovich, R. 265. 266 241, 263
Canfield, P.C., see Mun, M.O. 216, 217. 230 Cava. RJ .• see Grigereit, T.E. 205
Canfield. P.C.• see Narozhnyi, V.N. 248-252 Cava, RJ., see He. T. 284, 285
Canfield. P.C.• see Naugle. D.G. 216. 240 Cava, R.I., see Lynn. J.W 213. 215, 249. 252
Canfield. P.C.• see N0rgaard. K. 225 Cava, R.J., see Mattheiss, L.F. 208
Canfield. P.C., see Oomi, G. 216, 217 Cava, RJ.• see Murayama, e. 216
Canfield. P.C.• see Rathnayaka, K.D.D. 227, 230, Cava, RJ.• see Nohara, M. 279. 283-285
234.235.271.278 Cava, R.I.• see Sarrao, J.L. 205
Canfield. P.e.. see Rybaltchenko, L.F. 267, 277 Cava, R.I., see Siegrist. T. 218. 246,247,251,
Canfield. P.C., see Sala. R 243 253.270,335
Canfield. P.C., see Schmiedeshoff, G.M. 205, 206, Cava. R.I.• see Takagi. H. 215. 230, 231, 241
230 Cava, R.I.• see Zandbergen, HW. 219. 220, 223,
Canfield. P.C.• see Song. C. 221, 256. 273. 276, 242,266
284,285
Cezairliyan, A .• see Taylor. R.E. 311
Canfield. P.C., see Sternlieb, B. 219, 224
Chaika, A.N.• see Strukova, G.K. 226
Canfield. ac., see Suh. B.I. 214
Chaikin. P.M., see Jones. T.E. 218, 221
Canfield. P.C.• see Tomala, K. 219. 335. 357
Chakoumakos, B.C.• see Paranthaman, M. 212
Canfield. P.C.• see Uwatoko, Y. 273
Chandra, G.• see Mazumdar, Ch. 270
Canfield. P.C., see Vinnikov, L.Ya. 260, 264. 273
Chang. L.J. 241, 242, 275, 278
Canfield. P.C.• see Xu. M. 225
Chang. L.L., see Krol, A. 17
Canfield. P.C.• see Yang.I.-S. 229
Chang, L.L., see Munekata, H. 5. 6, 10. 11. 17.36
Canfield. P.C.• see Yanson, LK. 276
Chang, L.L.• see Ohno, H. 5. 10, 11, 32, 34. 35
Canfield. P.C.• see Yaron, U. 242. 248. 249, 251.
Chang, L.L.. see von Molnar. S. 34
270.271
Chantis, A.N., see Petukhov, A.G. 70
Canfield. P.C.• see Yatskar, A. 251. 271. 272
Chao, C.Y.-P. 69
Canfield. P.C., see Zarestky. J. 212. 230
Chaoshui, X.• see Rukang, L. 221
Cao, G., see Skanthakumar, S. 241, 242. 245. 252.
268 Chapman, R.A. 19,37
Cao, L.• see Eversmann, K. 216 Chappert, J. 116
Cao. Q.Q. 178 Chatterji, T., see Kobler, U. 309. 315
Cao. Y.• see Gao. L. 245. 269. 270 Chatlopadhya~A.60
Capehart. T.W.• see Herbst. J.e.M. 168. 173 Chazalviel, J.-N. 36

Capehart. T.W., see Pinkerton. EE. 168. 173 Chelkowski, A .• see Burzo, E. 339
Capellmann, H.• see Taylor. J.W. 318. 357 Chen. H.Y.• see Wang, J.H. 176
Cappannini, O.M. 229. 232 Chen, J.W, see Lin, M.S. 205
Cappannini, O.M., see Weht. R 206 Chen, L.F.. see Kawakami. RK. 5. 10. 63
Carbone, J.P. 216, 217. 247 Chen, LJ.• see WU, R.Q. 105
Cardona, M.• see Sapega, V.F. 20. 47 Chen. Q., see Chu. RK. 219
Carlson. K.D., see Williams. J.M. 209 Chen, T.Y., see Wang. J.H. 176
Carman. G.P.• see Duenas, T.A. 168. 173 Chen, X. 10
Carter, SA 202. 205, 224 Chen. Y.Y.• see Lee, WH. 205
Carter. SA, see Cava, R.I. 202. 205, 220. 223. Chen. Y.Y.• see Lin. M.S. 205
240.242.283 Cheon, K.O. 223. 227. 229
Casey Jr.• H.C. 38 Cheon, K.O., see Gammel, P.L. 267, 277
Cassinese, A.• see Andreone, A. 241 Cheong. H.D., see Jonker. J.T. 70
AUTHOR INDEX 369
Chevalier. B.• see Bober, 1.-L. 322 Christensen, N.E.• see Weht.R. 206
Chevalier. B.• see Lejay,P. 279. 280. 283. 284 Christianson. A.D. 236
Chiang. H.C.. see Hsu, Y.Y. 209. 210 Chtchelkanova, A.Y.• see Wolf. S. 4
Chiba, D. 65. 66 Chu. C.W.• see Dezaneti,L.M. 242. 249. 251, 270,
Chiba, D.• see Akiba, N. 65 271
Chiba, D.• see Ohno, H. 74 Chu. C.W. see Gao. L. 245. 269. 270
Chiba, D.• see Zhao. J.H. 10 Chu. C.W.• see we, M.K. 208
Chien. c.i, 27. 168 Chu. R.K. 219
Chikazumi, S. 130 Chu, S.N.G.. see Theodoropolpu, N. 14
Chikyow, T.• see Kuwahara. S. 13. 14 Chu, WK.• see Chu, R.K. 219
Chikyow, T.• see Matsumoto. Y. 78 Chuang. S.L.. see Chao. c.Y.-P. 69
Chinchure, A.D. 220. 242. 249. 258 Chubukov, A.V.• see Movshovich, R. 265. 266
Chinchure, A.D.• see Ghosh. G. 230 Chun, S.H.• see Potashnik, SJ. 5. 9. 34. 50. 56. 77
Chiriaco H. 168.169. 185 Chung. L.L.• see Soo, Y.L. 17
Chiriaco H.. see Hristoforou, E. 106 Cibert, 1.. see Dietl. T. 29.49--54.57.58.73.75
Chisten, D.K.• see Kogan.V.G. 273 Cibert, 1.. see Ferrand.D. 5. 27. 49. 54. 60
Chrnaissem, 0 .• see Dabrowski. B. 181 Cibert, J.•see Haury. A. 5.49.54
Cho. B.K. 220.241-243. 245.249.254. 256.257. Cibert, 1.. see Kossacki, P. 49. 74
260.261.267.269.278.287 Cichorek, T, see Drechsler. S.-L. 228. 229
Cho, B.K.• see Alieno. E. 216. 217 Cichorek, T. see Lipp, D. 226. 283
Cho, B.K.. see Canfield. P.C. 215. 242. 252. 254, Cimberle, M.R. 227
256-258.266-268.270 Cirafici,S.• see Merlo. F. 326. 357
Cho. B.K.. see Dervenagas, P. 230. 242. 245. 255. Ciria, M. 106. 159
256 Ciria, M.. see Arnaudas, J.I. 159. 160
Cho. B.K.• see Detlefs. C. 221, 310, 335. 357 Ciria, M.. see del Moral. A. 159--162
Cho, B.K.• see Goldman. A.I. 233 Civale, L.. see Silhanek, A.V. 205
Cho, B.K.• see Hill. J.P. 209 Clad. R.• see Jesser.R. 317. 357
Cho, B.K.• see Jacobs. T. 216 Claeyssen, F. 185. 187.188
Cho, B.K.. see Johnston-Halperin, E. 209 Clark. A.E. 94. 133.312
Cho, B.K.. see Le. L.P. 235 Clarke. R.. see Lee. C.H. 113
Cbo, B.K.• see Lee. K.H. 276, 288 Clausen. C.• see Hansen, P. 115. 117
Cho, B.K.• see Matsuda. N. 210 Clausen. K.N., see Jehan, D.A. 159
Cho, B.K., see Movshovich, R. 265. 266 Clausen. K.N.• see Swaddling.P.P. 159
Cho. B.K.. see Mun, M.O. 216. 217. 230 Cloud. WH .• see Bither.T.A. 14
Cho, B.K .• see Oomi, G. 216, 217 Cochrane,R.W 122
Cho, B.K.• see Rathnayaka, K.D.D. 230. 234. 235, Coehoom, R. 115.231
271 Coehoorn, R.. see Liu, J.P. 123
Cho. B.K.. see Suh, BJ. 214 Coehoorn, R.• see Mulder.F.M. 269
Cho, B.K.• see Uwatoko, Y. 273 Coey,1.M.D. 4.116, 126. 175.320
Cho. B.K.. see Xu. M. 225 Coey, 1.M.D.,see Chappert, J. 116
Cho. B.K.. see Yang. I.-S. 229 Cogliati, E.• see Andreone, A. 219
Cho, B.K.• see Yanson, I.K. 276 Cohen. A.M.• see RodriguesBitterncourt, A.C. 69
Cho, B.K .• see Zarestky, J. 230 Coldren. I.. see Johnston-Halperin, E. 71
Cho, J.H.• see Kogan. V.G. 273 Coles. B.R.• see Taylor. R.H. 316
Choi, C.K. 262 Collins. J.G.• see Barron,T.H.K. 311. 313
Choi, E.-M.• see Choi, 1.-H. 266 Colton. RJ., see Wandass. 1.H. 106
Choi, E.S., see Choi. C.K. 262 Comenescu, G.• see Chen. X. 10
Choi. J.-H. 266 Conder. K.• see Garda-Landa. B. 176. 177
Choi, S.-M. 271 Coniglio.A.• see Aharony, A. 208
Choi, Y.S.• see Lim. S.H. 142 Conner.R.A.• see Dwight. A.E. 329. 342
Chok, E.P.• see Jones. TE. 218. 221 Continentino, M.A.• see Fontes. M.B. 213
Chopra. H.D. 144 Cooke. D.W, see Nagarajan, R. 288
Christen. D.K., see Song. K.I. 221, 256 Cooper,J.R.. see Fisher. I.R. 223. 226.227.235.
Christensen.N.E.• see Cappannini, O.M. 229. 232 236.241.263
370 AUTHOR INDEX
Cooper. L.N .• see Bardeen, J. 227 Davydov, A.A., see Makarova, T.L. 286
Cooper. S.L.. see Yang. I.-S. 229 de Andrade, M.e., see Rathnayaka, K.D.D. 227.
Corenzwit, E.• see Matthias. B.T. 202. 209. 213 278
Correia. J.G .• see Wahl. U. 14 de Andrade. M.C., see Sarrao, lL. 205
Costa. E. see Alves. F. 172 de Andrade, M.C., see Zandbergen, H.W 223
Cottrell, S.P., see Nagarajan, R 288 de Boeck, 1. 4, 5, 9
Cowen. J.A., see Stampe, P.A. 324 de Boeck, 1.. see Akinaga, H. 14
Cowley. R.• see de la Fuente. e. 162 de Boeck, 1., see Ofuchi, H. 14
Cowley. R.A .• see Jehan, D.A. 159 de Boeck, J.. see van Esch, A. 5, 10,26, 30, 34. 55
Cox. S.EJ.• see Nagarajan, R 288 de Boer, C; see Schmiedeshoff, G.M. 230
Crabtree. G.W. see de Wilde, Y. 266. 277 de Boer, F.R., see Brabers, 1.H.V.I. 272
Crabtree, G.W.• see Dunlap. B.D. 212 de Boer. ER, see Liu, 1.P. 123
Crabtree, G.W. see Metlushko, Y. 240 de Boer. F.R.. see Mulder. EM. 269
Crangle, J.• see Parsons. MJ. 318. 357 de Chatel, P.E, see Liu, J.P. 123
Crepieux, A. 27 de Gennes, P.-G. 175, 260
Crow. lE., see Skanthakumar, S. 241,242,245, de Groot, P.AJ., see Arnaudas, J.I. 159, 160
252.268 de Groot, PAJ., see Ciria, M. 106, 159
Crowell, P.A., see Beschoten, B. 41, 47 de Jesus, Y.L.B. 340
Cubitt. R., see Cywinski. R. 207 de Jonge, WJ.M., see Draaisma, HJ.G. 172
Cubitt. R., see Paul, D. McK. 258, 269, 276 de Jonge, WJ.M., see Eggenkamp, P.TJ. 60
Cunningham, lE., see Erwin, RW 159 de la Fuente, C. 162
Cywinski, R 207 de la Fuente. C.• see Arnaudas, 1.1. 159. 160
Czapkiewicz, M.• see Stobiecki, T. 109 de la Fuente, C., see Ciria, M. 106, 159
Czopnik, A. see Grechnev, G.E. 318 de la Fuente. C., see del Moral, A. 159-162
Czopnik, A., see Narozhnyi, V.N. 213, 248. 251, de Melo, M.A.C., see Sanchez. D.R. 226. 266
252 de Reotier, P.D. 322
Czopnik, A., see Staliriski, B. 318. 357 de Reotier, P.D., see Mulders, AM. 322, 357
de Reotier, P.D., see Yaouanc, A. 322
de Teresa, J.M. 176, 178
da Costa, M.S .• see EI Massalami, M. 205. 206 de Teresa, L.M., see Garcia-Landa, B. 176, 177
da Cunha Lima, I.C., see Bosselli, M.A. 61 de Teresa, J.M .• see Ibarra, M.R. 175
da Cunha Lima. I.C., see Gummich, U. 48 de Wilde. Y. 266, 277
da CUnha Lima, I.C., see Louriero da Silva 62 Debray, D. 345
da Rocha, ES. 205 Debray, D.K. 350, 356
Dabrowski. B. 180, 181 Decamps, B., see Tominez, E. 216, 219, 220
Dadashev, 1.5., see Aliyev, M.1. 5, 14 Degtyareva, V.F., see Strukova, G.K. 226
Dagotto, E. 209 del Moral, A. 159-162
Dai, D.S., see Wang, J.H. 176 del Moral, A., see Amaudas, J.I. 159. 160
Damsma, H., see Havinga, E.E. 205 del Moral, A.. see Ciria, M. 106, 159
Dancaster, J.L., see Gibbs, M.RJ. 94 del Moral, A., see de la Fuente, C. 162
Danh, T.M. 94, 116-118, 122, 126 del Moral, A., see de Teresa, J.M. 176, 178
Danh, T.M., see Due, N.H. 94,117-119.126, del Moral, A., see Garda-Landa, B. 182
131-133. 140, 142, 143, 148. 150, 157, 158, Delerue, C; see Grandidier, B. 18
167 DeLong, L.E., see Fertig. WA. 205
Dan'kov, S.Y. 320 Demchenko, D.O., see Petukhov, A.G. 70
Darriet, B., see Bobet, l-L. 322 Demin, R.V. 178
Das Sarma, S. 79 Demin, RV.• see Koroleva, L.I. 178
Das Sarma, S., see Chattopadhyay, A. 60 Demishev, S.L., see Bud'ko, S.L. 271
Das Sarma, S., see Zutic, I. 71 den Boef, 1.H., see Henning. le.M. III
Date, V.G., see Hossain. Z. 242, 248, 253 Denisson, C.J.M., see Dime, EWA. 15 I
Daughton, J.M., see Wolf, S. 4 Dennis, K.W, see Canfield, P.e. 242, 266, 268
Davidov, D. 216 Dertinger, A. 216, 217, 220, 242, 264, 266
Davies, H.A., see Batt. AJ. 120 Dertinger, A., see Schmidt, H. 216, 264
Davis. M.R., see Luke, G.M. 212 Dertinger, A., see Wagner, T.A 231, 285
AUTHOR INDEX 371
Dervenagas, P. 230. 242, 245. 255. 256 Dobrowolski. W.• see Kossut, J. 5
Dervenagas, 1'.• see Detlefs, C. 261 Dobrowolski. W.• see Osinniy. V. 33
Dervenagas, 1'., see Goldman. A.I. 233 Doerr. M. 335
Dervenagas, P., see Zarestky, J. 230 Doerr. M.• see Rotter. M. 310. 311. 314. 344,
Desai. P.O., see Touloukian. Y.S. 320 346-350.356
DeSavage, B.F.. see Clark. A.E. 312 Doerr, M.• see Svoboda, P. 345
DeSimone, D. 6 Doh, H., see Choi. J.-H. 266
Desmoulins, J.B .• see Alves, F. 172 Dolejsi, D.A. 315
Detlefs, C. 221. 222,241.242,245.253,254.261, Domagala, J.Z., see Sadowski. J. 5. 9.15. 16,26.
262.272,273.310,335,357 77
Detlefs, C., see Hill. J.P. 209 Dong, J., see Wang. Z.D. 216. 217
Detlefs, C.• see Song. C. 273, 276, 284. 285 Donwey, J.w., see Dwight, A.E. 342
Detwiler, J.D., see Schmiedeshoff, G.M. 205. 206 Donze. 1'.. see Peter. M. 214
Dewhurst, C.D. 202. 205. 220, 267. 277 Dorandziriski, R.• see ZajIlC. M. 13
Dewhurst. C.D., see James. S.S. 267 Doring, W.O.• see Becker. R. 95
Dewhurst. C.D .• see Paul. D. McK. 258 Dorlijn, J.w.F. 36
Dewhurst. C.D .• see Saha, N. 225 Dormann, E.• see Kaplan. N. 316. 357
DeWilde, Y.• see Andreone, A. 215 Downey. J.W.• see Dwight. A.E. 329
Dezaneti, L.M. 242. 249. 251, 270. 271 Doyle. R.A.• see Dewhurst, C.D. 267. 277
Dhar, S.K. 227. 240-242. 251 Draaisma, H.J.G. 172
Dhar. S.K.. see Bonville. P. 213
Drasner, A.• see Blazina, Z. 322
Dhar, S.K .• see Godart, C. 218
Drechsler, S.-L. 216. 228. 229. 234
Dhar, S.K .• see Gupta. L.C. 216,288
Drechsler. S.-L.. see Bitterlich, H. 210, 287. 288
Dhar, S.K .• see Hossain. Z. 205, 219. 220. 223.
Drechsler. S.-L., see Freudenberger, J. 219. 224.
242.248-250.253,271,288
225.266.279.287.288
Dhar, S.K .• see Mazumdar, Ch. 234. 235
Drechsler. S.-L.. see Fuchs. G. 209
Dhar, S.K .. see Nagarajan. R. 216. 225. 242. 253
Drechsler, S.-L.. see Lipp, D. 226. 283
Dhar, S.K., see Rams. M. 221
Drechsler, S.-L., see Narozhnyi, V.N. 248. 251
Dickey. R.P.• see Bauer, E.D. 214
Drechsler, S.-L.. see Rosner. H. 205. 206.
Dickey. R.P.• see Rathnayaka, K.D.D. 227, 278
Dieny. B. 110. 163 228-230.233,235
Drechsler. S.-L., see Shulga, S.V. 218, 223, 233.
Dietl. T. 5. 23. 25. 27. 29. 30, 40, 41. 47-59,73-77
241, 246, 281, 284
Dietl. T.• see Akiba, N. 68. 69
Dietl. T.• see Benoit a la Guillaume, C. 42. 60 Drechsler. S.-L.. see von Lips. H. 260-262
Dietl. T., see Ferrand. D. 5.27,49.54.60 Drew, H.D.• see Liu, S. 37
Dietl. T., see GI6d. P. 49 Driscol, D., see Salis. G. 79
Dietl, T., see Haury. A. 5,49, 54 Drost, R.. see Garda-Landa, B. 176. 177
Dietl. T.. see Kossacki, P. 49, 74 Drzazga, Z., see Tomala, K. 219
Dietl, T., see Nagai, Y. 37.49 Du, R.• see Erwin. R.W. 159
Dietl, T., see Ohno, H. 74 Du. R.R., see Borchers. J.A. 159
Dietl. T.• see Omiya, T. 30-33. 47. 55 Du, Y.W.• see Cao, Q.Q. 178
Dietl. T.• see Wojtowicz, T. 32 Du Mar. A.C. 212
Dietzel. A., see Berger. R. 188 du Tremolet de Lacheissene, E. 94. 96, 97. 101.
Digle, R.• see I1egems, M. 19 104-108. III. 149. 185. 186.316,317.319.
Dinnebier, R.E.. see Dertinger, A. 216. 217. 264. 357
266 du Tremolet de Lacheisserie, E.• see Givord, D.
Dime. F.W.A. 151 120. 165
Divincenzo, D.• see Vrijen, R. 79 du Tremolet de Lacheisserie, E.• see Rouchy, J.
DiVincenzo. D.P.• see Loss, D. 79 319,358
Divis, M. 216, 227, 231, 242 Duc. N.H. 94-96. 103, 114-119. 123-127,
Divis. M.• see Javorsky. P. 326. 357 129-133. 140, 142. 143. 148-153, 157. 158.
Dmytrakh, 0., see Kalychak, Y.M. 331 167. 168
Dobrosavljevic-Grujic, Lj., see Kogan, V.G. 207. Due, N.H.• see Danh, T.M. 94.116-118.122.126
273 Due, N.H., see Givord, 0.120.165
372 AUTHDRINDEX
Duenas, T.A. 168. 173 Eng~,G.95,338, 340. 355

Dufeu, D., see Ferrand. D. 5, 27.49,54.60 Enser, J., see ROller, M. 344.347-350
Dugaev, V.K.• see Litvinov, v.1. 48 Ensslin, K., see Salis, G. 79
Dugdale. S.B. 230. 240 Eremets, M.I. 274. 276
Duhaj, P.• see Skorvanek. I. 168 Erickson. DJ., see Willis, J.D. 258
Dunlap, B.D. 212, 256 Eriksson, D., see Ravindran, P. 229
Dunmore, F., see Liu. S. 37 Ernst, G., see Eskildsen. M.R. 269,275
Duran, A.• see Falcony, R. 213 Emstberger, B., see Schmidt, H. 216. 264
Durst. A.e., see Wolff. P.A. 48 Erwin, n.w 159
Dusek, C.• see Michor, H. 223. 279 Erwin, R.w., see Borchers, J.A. 159
Dwight. A. 126 Erwin, RW., see Lynn. J.W. 220, 226. 242. 244.
Dwight, A.E. 329, 342 245,247-249.253.256,276
Dybzinski, R.• see Dabrowski, B. 181 Erwin, R.W.• see Rhyne. J.J. 93
Dynowska, E., see Szuszkiewicz, W. 66 Erwin, S.C., see Park. Y.D. 74
Dzyaloshinsky, I.E. 220, 242. 251, 259 Erwing, R.W., see Beach, R.S. 159
Esaki, L., see Munekata, H. 5. 6, 10, 17
Eschrig, H.• see Drechsler. S.-L. 216, 228, 229.
Early. E.A .• see Luke. G.M. 212
234
Eckert, D., see Hase, K. 205
Eschrig, H.• see Rosner, H. 205, 206. 228-230.
Eckert, D., see Milller. K.-H. 209, 216
233.235
Eckert. D.• see Narozhnyi, V.N. 213, 248-252
Escudero, R.• see Falcony, R. 213
Eckert, J., see Gilmbel, A. 242, 253. 254
Eskildsen. M.R. 265. 267, 269. 273-276
Edwards, P.P.48, 49
Eskildsen. M.R .• see Gammel, P.L. 223. 267, 277.
Efimov, Y.V., see Savitskii, E.M. 214
279
Eger, R.• see Simon. A. 227 Eskildsen, M.R., see Nergaard, K. 225
Eggenkamp, P.TJ. 60 Eskildsen, M.R., see Varon, U. 242, 248. 249. 251,
Eguchi, R.. see Katsumoto, S. 20, 37,50 270.271
Eisaki, H. 231, 240 Espeso, J.1. 340-342, 357
Eisaki, H.• see Cava. R.J. 202, 205. 220. 223, 240, Espeso, J.I., see Blanco. J.A. 342, 343. 356
242.283 Esquinazi, P.• see Makarova, T.L. 286
Eisaki, H., see Murayama, C. 216 Eto, T.181
Eisaki, H.• see Takagi, H. 215, 230, 241 Etourneau, J.• see Lejay, P. 279, 280, 283, 284
Ekino, T. 259 Ellig, W., see Wagner, T.A. 231, 285
El Ghannami, M., see Hernando, A. 122, 168 Evans Jr., e.A.. see DeSimone, D. 6
EI Massalami, M. 205. 206. 219, 220, 223, 242, Everitt, B.• see Beach, R.S. 159
247.278 Eversmann, K. 216
EI Massalami, M.• see Bud'ko, S.L. 216. 217 Evetts, J.E., see Huang, J. 96, 109, 117
El Massalami. M.• see Doerr, M. 335
El Massalami, M.• see Rapp, R.E. 261 Fabian, J., see Das Sarma, S. 79
EI-Hagary, M. 232, 245. 253, 287 Fabian, J., see Zutic, I. 71
EI-Hagary, M., see Manalo, S. 236, 237 Fahnle, M. 105
El-Hagary, M.• see Michor, H. 224, 287 Falcony, R. 213
El-Masry, N.A., see Reed, M.L. 14,77 Fan, X.-J., see Matsumoto. Y. 78
El-Metoui, M., see Kreisel, J. 18 Farber, P. 133, 139, 140. 145, 147, 148, 158
Eliashberg, G.M. 223 Farrell, D.• see Canfield, P.e. 215
Elyutin, D.P., see Belov, K.P. 126 Farrell, D.E.• see Johnston-Halperin, E. 209
Emerson. J.P., see Wright. D.A. 207 Faschinger, W., see Schott, G.M. 5. 7.16
Enders. A., see Sander. D. 106, 107, 113 Fauth, F., see Gasser. U. 241
Endo, A., see Hayashi. T. 26 Fay, D. 213
Endo, A., see Ohno, H. 5. 15-17,22, 25. 26, 54. Fedorych, D.M. 19,58
55,57.58 Fehrenbacher. R. 219. 221
Endo. A., see Oiwa, A. 20-23, 31, 36, 49. 50, 55 Feiner, L.F. 175
Endo, A., see Shea, A. 7-9. 11,25.36,54,57,58 Felder, R.I., see Cava, R.I. 202, 205, 220, 223.
Endo,T. 10 240.242,283
AUTHOR INDEX 373
Feiner, I. 209. 213, 216. 241, 255. 278. 279 Fisun, V.V., see Yanson, I.K. 276
Feiner, I., see Godart. C. 220. 242. 260 Fleming, R.M .• see Cava, RJ. 202, 223
Feiner. I., see Hodges, J.A. 278 F1ik, G., see Schatz, F. 118. 130, 131. 133, 135
Feiner. I., see Prozorov, R. 284 Flouquet, J., see Aoki, D. 214
Felser, C., see Gulden, Th. 219, 224 Flouquet, J., see Brison, J.P. 220, 283
Ferdeghini, C., see Cimberle, M.R. 227 Flouquet, J., see Huxley, A. 211
Ferell. R.A., see Lynn, J.W. 220, 226, 242, 244, Flouquet, J., see Saxena, S.S. 209
245,247-249,253,256,276 Flynn, C.P., see Borchers, J.A. 159
Fernandez-Baca, J.A. 211 Flynn, C.P., see Erwin. R.W. 159
Fernandez-Diaz, M.T., see Rotter, M. 346, 347, Flynn, C.P., see O'Donovan, K.V. 159
356 Fnidiki, A., see Due, N.H. 168
Fernandez-Diaz, T., see Gratz, E. 317 Fomicheva, L.N., see Narozhnyi, Y.N. 235-238,
Femandez-Rossier, J. 49, 53, 54 248-252
Ferrand, D. 5, 27, 49, 54, 60 Fompeyrine, J., see Berger, R. 188
Ferrand, D., see Dietl, T. 29,49-54,57,58,73,75 Fontana, E, see Andreone, A. 215
Ferrand, D., see Kossacki, P. 49, 74 Fontcuberta, J. 309
Fert, A., see Barthelemy, A. 93 Fontenille, J., see Baron, T. 5
Fertig, W.A. 205 Fontes, M.B. 213
Feyerherm, R, see Le, L.P. 235 Fontes, M.B., see Bud'ko, S.L. 216. 217, 271, 278,
Fiederling, R. 70 279
Fiedler, J., see Johnston-Halperin, E. 209 Fontes, M.B., see Sanchez, D.R. 226, 256, 266
Field, S.B., see James, S.S. 267 Forester, D.W. 117
Filatova, I.V.• see Komarovskaja, L.P. 327 Forgan, E.M., see Cywinski, R. 207
Finazzi, M., see Ohldag, H. 20,44, 45, 50
Forgan, E.M., see Paul, D. McK. 258, 269, 276
Fink, HJ. 205, 208, 211
Forgan, E.M .• see Yethiraj, M. 272
Fink. J., see Behr; G. 219
Foulkes, I.E 217. 241. 279
Fink, J., see Drechsler. S.-L. 234
Fraga, G.L.E, see da Rocha, ES. 205
Fink, J., see von Lips, H. 260---262
Franck, J.P., see Lawrie, 0.0.241
Fink, J., see Mazumdar, Ch. 229
Francois, I., see van Esch, A. 10
Finnemore, D.K., see Canfield, P.C. 254
Frankel, RB., see Story, T. 5
Finnemore, D.K., see Johnston-Halperin, E. 209
Franse, J.J.M. 122,322,357
Finnemore, O.K., see Xu, M. 225
Franse, J.J.M., see Luong. N.H. 346
Finskaya, V., see Tomilo, Zh. 219, 220, 226
Franse, J.J.M., see Tung, L.D. 330, 357
Finskaya, Y.M., see Tornilo, Zh.M. 205, 220, 224
Franse, J.J.M., see Yaouanc, A. 322
Fischer, H.E., see Blanco, J.A. 342, 343, 356
Fischer, H.E., see Rotter, M. 346, 347, 356 Freeman, A.J. 105,109
Fischer, K., see Kobler, U. 309, 315 Freeman, AJ., see Shick, A.B. 105
Fischer, 0. 208, 212, 216, 236, 237 Freeman, AJ., see Wu, R. 105
Fischer, 0., see Ishikawa, M. 211, 212, 285 Freeman, AJ., see WU, R.Q. 105
Fischer, 0., see Maple, M.B. 215 Freeman, AJ., see Zhao, Y.-J. 42, 44, 78
Fischer, 0., see Peter, M. 214 Frere, P.E.M., see Gibbs, M.RJ. 94
Fischer, S.E 139, 140 Freudenberger, J. 219, 224, 225, 233, 234, 236,
Fisher, I.R. 223,226,227.235,236,241,263, 237,241,266,279,280,284,287-289
333,356 Freudenberger, J., see Behr, G. 219
Fisher, I.R, see Cheon, K.O. 223, 227, 229 Freudenberger, J., see Drechsler, S.-L. 228, 229,
Fisher, I.R., see Dugdale, S.B. 230, 240 234
Fisher, I.R., see Eskildsen, M.R. 269, 276 Freudenberger, J., see Kreyssig, A. 205, 221, 222,
Fisher, I.R., see Gammel, P.L. 267, 277 262
Fisher. M.E. 61 Freudenberger, J., see Lipp, D. 226, 283
Fisher, R.A., see Wright. D.A. 207 Freudenberger, J., see Loewenhaupt. M. 273
Fishman, G., see Ferrand, D. 5, 27, 49. 54, 60 Freudenberger, J., see Mllller, K.-H. 216
Fishman, G., see Gaj, J.A. 36, 51 Freudenberger, J., see Narozhnyi, V.N. 213, 236,
Fisk, Z., see Sarrao, J.L. 205 237,248.251,252,271,276,288
Fisk, Z., see Zandbergen, H.W. 223 Freudenberger, J., see Rotter, M. 223
374 AUTHOR INDEX
Freudenberger, 1.• see Sierks, C. 275 Galff"y. M. 275

Frey, E. 315. 320 Gallagher. K.• see Coey, 1.M.D. 320
Frolich, H. 48 Galli. M.• see El-Hagary, M. 245. 253
Prone, K.• see Zuberek, R. III. 156 Gamari-Seale, H. 323
Fuchs. D.T., see Salis. G. 79 Gambino. R.I .• see Munekata, H. 10. 11.36.57,
Fuchs, G. 209 58
Fuchs. G .• see Bitterlich, H. 210. 287. 288 Gammel. PL 223.267.273,277.279
Fuchs. G .• see Buchgeister, M. 220 Gammel, P.L.. see Canfield. P.e. 262. 266. 268
Fuchs, G .• see Drechsler. S.-L. 228. 229. 234 Gammel, PL. see Cheon, K.O. 227. 229
Fuchs. G., see Eversmann, K. 216 Gammel. P.L.. see Choi, S.-M. 271
Fuchs. G.• see Freudenberger, 1. 219. 224. 225. Gammel. P.L.. see Eskildsen, M.R. 265, 267, 269.
233.234.236.237,241.266,279.280,284. 273-276
287-289 Gammel. P.L.. see Kogan. V.G. 207
Fuchs. G.• see Kreyssig, A. 205. 221. 222 Gammel. P.L.. see Yaron, U. 242. 248, 249. 251,
Fuchs. G .• see Lipp, D. 226. 283 270.271
Fuchs. G .• see Milller, K.-H. 209, 216. 250. 256 Gangopadhyay, A.K. 216, 223
Fuchs. G .• see Narozhnyi, V.N. 213. 236, 237. Gangopadhyay, A.K., see Looney. C. 208
248-252,271.276,288 Gao.L. 245. 269.270
Fuchs. G .• see Shulga, S.V. 233, 241. 281 Gao. L.. see Wu. M.K. 208
Fujii. H.• see Arisawa, S. 219 Garcia. D.• see Stobiecki, T. 109
Fujii. H.• see Ekino. T. 259 Garda. 1.• see de Teresa. 1.M. 176. 178
Fujimori, A.. see Mizokawa, T. 44. 46 Garcia. 1.• see Ibarra. M.R. 175. 176
Fujimori, A.• see Okabayashi, 1.13,21.31.44-46, Garda Escorial, A., see Hernando, A. 122. 168
50.55,79 Garcia-Arribas, A., see Gutierrez. 1. 170
Fujimori, H. 120 Garcfa-Beneytez, J.M., see Areas. J. 172
Fujimori. H.• see Lim. S.H. 142 Garcfa-Beneytez, J.M .• see Tejedor, M. 168
Fujimori. H.• see Ohnuma, S. 173. 174. 189 Garda-Landa. B. 176. 177, 182
Fujimori, H .• see Shima. T. 120. 156 Garcia-Landa, B.• see Ibarra, M.R. 184. 185
Fujino. Y.• see Miyazaki. T. 117, 118. 122-124. Garda-Landa. B.• see Morellon, L. 309. 336, 337,
133. 136. 137 339.358
Fukamichi, K.. see Novosad. V. 189. 190 Garcfa-Soldevilla, J., see Blanco. 1.A. 342. 343.
Fukumura, T. 26 356
Garcia-Tello, P.• see Zuberek, R. 173
Fukumura, T.. see Matsumoto, Y. 78
Gamier, A., see Orsier, E. 188
Fukumura, T.• see Shono, T. 26. 58. 59
Gasser. U. 208. 222. 241, 245. 269
Fukunaga. H., see Narita. K. 108
Gasser. U.. see Allenspach, P. 245
Fulde. P. 210. 214. 287
Gasser. U.. see Mulders. A.M. 275
Fulde, P.• see Amici. A. 266
Gavaix, A.• see Kreisel. J. 18
Fulde. P., see Keller. 1. 235
Gavaler, 1.R. 273
Furnagalli, P. 36. 40
Gavigan. J.P. 123
Fumagalli, P.• see Munekata, H. 11.36.57.58
Gavrilenko, V.I.. see Freeman, A.J. 105. 109
Furdyna.l.5
Gayrnann, A. 37
Furdyna,1.• see Szczytko,1. 19
Geballe, T.H.• see Matthias. B.T. 202
Furdyna, 1.K.• see Baxter. D.V. 32
Gebauer. J.• see Luysberg, M. 7.33
Furdyna, 1.K.. see Chen, X. 10
Gebicki, W. 13
Furdyna, 1.K.. see Liu, X. 5. 26
Gebicki, w.. see Zajllc. M. 13
Furomoto, S.• see Shimizu. K. 231 Gegenwart, P.• see Drechsler, S.-L. 228. 229
Furrer. A.• see Gasser. U. 222. 241. 245, 269
Gegenwart, P.• see Lipp, D. 226. 283
Gegenwart, Ph., see Steglich, F. 242
Gaal, P.S.• see Taylor. R.E. 311 Geibel. Chr.• see Steghch, F. 242
Gabovich, A.M. 238 Geiser. U., see Williams. 1.M. 209
Gaj. 1.A. 36. 51 Geng, W.T.• see Zhao. Y.-l. 42, 44, 78
Galazka, R.R. 5 Gerlach, B., see Quandt, E. 117. 122
Galazka, R.R .• see Story. T. 5 Gesench, H.P., see Gayrnann, A. 37
AUTHOR INDEX 375
Ghazali, A., see Bosselli, MA 61 Godart, C.• see Nagarajan. R. 216, 225. 242. 253.
Ghazali, A., see Leroux-Hugon, P. 36 288
Ghazali, A., see Louriero da Silva 62 Godart. C; see Rams, M. 221
Ghivelder, L., see EI Massalami, M. 219, 220. Godart, C.• see Sanchez. J.P. 219. 220. 224. 225
242,247 Godart. C.• see Sinha. S.K. 213
Ghosh. G. 230 Godart, C.• see Tominez, E. 216, 219. 220, 242
Ghosh, P.K. 287 Godwal, B.K.. see Meenakshi, S. 216. 217. 243
Gianni. L., see Andreone, A. 241 Goedkoop, J.B.• see Ohldag. H. 20. 44. 45, 50
Gibbs, D.• see Detlefs, C. 221, 222, 310, 335. 357 Golden. M.S., see Drechsler. S.-L. 234
Gibbs. D., see Hill, J.P. 209 Golden. M.S.• see von Lips. H. 260-262
Gibbs. M.RJ. 94. 188 Golden. M.S.• see Mazumdar, Ch. 229
Gibbs. M.RJ., see Lafford, A. 156 Goldman. A.• see Zarestky, J. 212
Gibbs, M.RJ.• see Zuberek, R. Ill, 156. 157. 170 Goldman, A.I. 233
Giebultwicz, T.M., see Kepa, H. 66 Goldman, A.I., see Dervenagas, P. 230, 242. 245.
Gignoux, D. 329. 330. 341, 356 255.256
Gignoux, D.. see Blanco, J.A. 310, 339-341, 356. Goldman. A.I.. see Detlefs. C. 221. 222. 241. 242.
357 245,253,254
Gignoux, D.. see Castets, A. 343, 356 Goldman. A.I., see Hill. J.P. 209
Ginzburg, V.L. 205. 207, 210 Goldman. A.I.• see Song. C. 221, 256. 273. 276,
Giordanengo, B.• see Bud'ko, S.L. 216, 217, 278 284.285
Giordanengo, B.• see EI Massalami, M. 242, 278 Goldman. A.I., see Sternlieb, B. 219. 224
Giordanengo, B., see Fontes. M.B. 213 Goldman. A.I., see Yaron, U. 242. 248, 249. 251,
270.271
Giorgi, A.L. 226
Goldman. A.I.• see Zarestky. J. 230
Giorgi. A.L., see Krupka, M.e. 205
Goldmann. A.I., see Detlefs, e. 310, 335. 357
Givord, D. 120. 133, 141, 163, 165
Goldstein. B., see Almesh, N. 19
Givord, D.. see Betz, J. 94. 120. 121, 133
Goll.G.230
Givord, D.• see Coey, J.M.D. 126
Golnik, A.• see Bernhard. C. 213
Givord, D., see Dieny, B. 163
Gomes, A.A.• see da Rocha, F.S. 205
Givord, D.. see Due. N.H. 94. 103, 115. 116. 119.
G6mez-Polo, c, see Hernando. A. 122. 168
123-127. 129, 130. 133
Gomez-Sal, J.C .• see Blanco. J.A. 339-343. 356.
Givord, D.. see Gavigan, lP. 123
357
Givord, D.. see Orsier, E. 188
Gomez-Sal, J.C.• see Casters. A. 343. 356
Givord, D.• see Quandt. E. 94. 141, 157, 158. 188
Gomez-Sal, rc, see Espeso, J.I. 340--342. 357
Gladczuc, L., see Dabrowski. B. 180. 181 G6mez-Sal, J.C., see Fontcuberta, J. 309
Gladczuk, L., see Szymczak. R. 234, 235. 240 Gomez-Sal, J.C., see Gignoux, D. 341
Gladun, A.• see Drechsler, S.-L. 228. 229. 234 Gomez-Sal, J.C.• see Hernando. A. 309
Gladun, A., see Lipp, D. 226. 283 Gong, Sh., see Jiang. X. 119
Glarum, S.H., see Rosseinsky, MJ. 209 Gonzalez, L, see Szumiata, T. 105. 172
Gl6d.P.49 Gonzalez, J.• see Szymczak. H. 174
Go. G.S .• see Lee. K.H. 288 Gonzalez, J.• see Zuberek, R. 173
Go. J., see de la Fuente, C. 162 Good. W.• see Song, C. 284. 285
Godart. C. 218, 220. 242, 260 Goodenough. lB. 75
Godart. C.• see Alieno, E. 225, 226, 242. 246. 260. Gopalakrishnan. K.V.• see Nagarajan. R. 225. 242.
263,264 253
Godart, c., see Bonville, P. 213. 270 Gopolakrishnan, L, see Luke, G.M. 212
Godart, C., see Dhar, S.K. 227. 240--242. 251 Gorbenko, O.Y.• see Abramovieh, A.I. 178. 179
Godart. C., s.~e FeIner, I. 213. 216. 279 Gordon. J.E.• see Wright. D.A. 207
Godart. C.• see Ghosh, G. 230 Goremychkin, E.• see Gratz, E. 317
Godart. C.• see Gupta, L.C. 216, 288 Gor'kov, L.P. 210, 220, 242, 260
Godart. C., see Hossain, Z. 219, 223, 242, Gor'kov, L.P.• see Abrikosov, A.A. 209. 286
248-250.253.271 Gorochov, 0 .• see Ravot, D. 324. 357
Godart. C., see Lynn, J.W. 213, 220. 289. 335 Gorria, P.• see Gutierrez. J. 170
Godart, C., see Mazumdar, Ch. 234. 235, 270 Gorria, P.• see Slawska-Waniewska, A. 169
376 AUTHOR INDEX
Gortenmulder, TJ., see Zandbergen, H.W. 223 Guebels, N., see Kawakami, R.K. 5, 10,63
Gosk, 1., see Zajac, M. 13 Guerevich, A., see Kogan, VG. 273
Gossard, A.C., see Harris, J.G.E. 26 Guha, S. 10
Gossard, A.C., see Johnston-Halperin, E. 71 Guimaraes, A.P., see de Jesus, VL.B. 340
Gossard, A.C., see Kawakami, R.K. 5, 10, 63, 75 Gulden, Th. 219, 224
Gossard, A.C., see Salis, G. 79 Gulden, Th., see Henn, R.W. 238
Gotaas, J.A., see Lynn, J.W. 220, 226, 242, 244, Gumbel, A. 242, 253, 254
245,247-249,253,256,276 Gumrnich, U. 48
Gotard, C., see Mauger, A. 4 Guo, L., see Chen, X. 10
Goto, T., see Due, N.H. %, 114 Guo, S.P. 7,10
Goto, T., see Oomi, G. 216 Guo, S.P., see Ofuchi, H. 17
Grabias, A., see Stobiecki, T. 109 Guo, S.P., see Shen, A. 7, 9, 15, 16,54,58
Grabtree, C.W., see Andreone, A. 215 Guo, Y., see Mathieu, R. 175
Gradmann, U. 93,151 Gupta, L.C. 216, 275, 288
Grandidier, B. 18 Gupta. i.c.. see AlIeno, E. 242. 246
Grant, J.B., see Mailhiot, C. 208 Gupta. L.C., see Bonville, P. 213, 270
Gratz, E. 309, 317, 325, 329, 341, 346-348, 351, Gupta, t.c., see Chinchure, A.D. 220, 242, 249,
356,357 258
Gratz, E., see Lindbaum, A. 317, 345 Gupta, L.C., see Dhar, S.K. 227, 240-242, 251
Gratz, E., see Pacheco, J.V. 327 Gupta, L.C., see Ghosh, G. 230
Gratz, E., see Rotter, M. 310, 311, 344, 346-350, Gupta, L.C., see Godart, C. 218, 220, 242, 260
356 Gupta. L.C., see Hossain, Z. 205, 219, 220, 223.
Graw, G., see Behr, G. 219,225 242.248-250,253,271,288
Grazioli, C., see von Lips, H. 260-262 Gupta. L.C., see Jacobs, T. 216
Grechnev, G.E. 318 Gupta, L.C .• see Lynn, 1.w. 213, 220, 289, 335
Greenough, R.D., see Jerems, E 117 Gupta. L'C; see Mazumdar, Ch. 234, 235, 270
Greneche, 1.M., see Slawska-Waniewska, A. 170 Gupta, L.c., see Meenakshi, S. 216, 217. 243
Grest, G.S., see Levin, K. 235 Gupta, L.C., see Nagarajan, R. 216, 225, 242, 253,
Grest, G.S., see Nass, MJ. 258 269.288
Griessen, R., see Wijngaarden, RJ. 205 Gupta, L.C., see Rams. M. 221
Grietens, B., see van Esch, A. 5, 26, 30, 34, 55 Gupta. L.C.• see Sanchez, J.P. 219. 220, 224, 225
Grigereit, T.E. 205 Gupta, L.C., see Sinha, S.K. 213
Grigereit, T.E., see Sinha, S.K. 213 Gurevich, A. 205
Grishin, A.M., see Strom, V. 205 Gurney, B.• see Baril, L. 110
Grosche, EM., see Saxena, S.S. 209 Gurney, B.A .• see Dieny, B. 110, 163
Grossinger, R., see Holzer, D. 168
Gusev, A.I. 219
Grossinger, R., see Skorvanek, I. 168
Gutierrez. J. 170
GrUbel. G., see Detlefs, C. 261, 262
Gutjahr-Loser, Th. 104, 114
Grundy, PJ. 117
Gutowska, M., see Dabrowski. B. 180. 181
Grundy, PJ., see Williams, P.I. 119, 122, 133
Gyax, EN.• see Mulders, A.M. 322, 357
Grzanka, E., see Zajllc, M. 13
Gygax, EN., see Le, L.P. 235
Gschneidner Jr., K.A., see Dan'kov, S.Y. 320
Gyorffy, B.L.. see Foulkes. I.E 217, 241. 279
Gschneidner Jr., K.A., see Levin, E.M. 336
Gyorgy, E.M .• see Cava, RJ. 205.220,283
Gschneidner Jr., K.A., see Pecharsky, V.K.
336-338
Gu. K.M., see Cao, Q.Q. 178 Haas. M.K., see He, T. 284, 285
Gu, T., see Detlefs, C. 241, 242, 245, 253, 254 Habbicki, A.T., see Park, Y.D. 74
Guan, W.Y., see Ku, H.C. 284, 285 Haddon, R.C., see Rosseinsky, MJ. 209
Guasconi, P., see Cimberle, M.R. 227 Hafner, 1.. see Lindbaum, A. 317. 345
Gubbens, P.C.M., see Mulders, A.M. 275, 322, Hagenmuller, P., see Lejay, P. 279, 280, 283, 284
357 Hagmann, N., see Jehan, D.A. 159
Gubbens, P.C.M., see Yaouanc, A. 322 Hahn, T., see Taylor, R.E. 311
Gubin, S.P. 168 Halstrup. B. 187
Gubin, S.P., see Koksharov, Yu.A. 168 Han. K.S .• see Lee, K.H. 276. 288
AUTHOR INDEX 377
Han. S.H., see Lim, S.H. 142 Hausermann-Berg, L.S.• see Shelton. R.N. 207.
Han. S.H.• see Sarrao, J.L. 205 208
Han, S.H., see Zandbergen, H.W. 223 Havela, L.. see Javorsky, P. 325-327, 357
Han, Z.P., see Cywinski. R. 207 Havinga, E.E. 205
Handstein, A., see Eversmann. K. 216 Hayashi, T. 5.9.26,34.62,63.65. 176
Handstein, A., see Freudenberger, J. 236. 237. 289 Hayashi. T., see Ando, K. 40
Handstein, A., see Fuchs, G. 209 Hayashi. T.• see Katsumoto, S. 20, 37, 50
Handstein, A.• see GUmbel. A. 242. 253. 254 Hayashi. T.• see Okabayashi, J. 13.21,31,44-46.
Handstein, A.• see Kreyssig, A. 222 50.55
Handstein, A.• see MUlier. K.-H. 209. 216, 250. Hayashi, T.• see Shimizu. H. 7.16,34,41.55
256 Hayashi. T., see Shioda, R. 18
Handstein, A.• see Narozhnyi, V.N. 236. 237. 271 Hayashi. T.• see Szczytko, J. 19
Haneda,S.5, 12, 16 Hayashi. Y. 117. 119-121. 133
Haneda, S.• see Kuwabara, S. 13. 14 Hayashi. Y.• see Honda. T. 119
Haneda, S., see see, Y.L. 12 Hayata, K., see Medvedkin, G.A. 77
Hankiewicz, E.M.• see Fedorych, O.M. 19.58 Hayden. S.M.• see Pfleiderer.C. 226. 237
Hansen, P. 115. 117. 126 Hayward, M.A., see He. T. 284. 285
Hansen. P., see Mergel, D. 96 Hazama, Y. 79
He. H., see Lee. C.H. 113
Hanson. M.• see Kawakami, R.K. 5. 10. 63. 75
He. T. 284, 285
Hao. J.. see ue, X.C. 19
Heathman. S., see Lindbaum, A. 317. 345
Hara, K.. see Haneda, S. 12. 16
Hebard, A.F.. see Rosseinsky,MJ. 209
Harada, K.• see Eskildsen, M.R. 269, 275
Hebard. A.F.• see Theodoropolpu, N. 14
Harada, Y.• see Katsumoto, S. 20. 37. 50
Hebard. F.. see Overberg, M.E. 13
Harigae, S.• see Haneda, S. 12, 16
Hedegard, P.• see NlIIrgaard, K. 225
Harima, H., see Kanamura, M. 73
Hedo,M.24O
Harmon, B., see Dervenagas, P. 242. 256
Heffner. R.H.• see Le, L.P. 235
Harmon. B., see Kogan. V.G.207
Heiman. D., see ue, X.C. 19
Harmon. B.N.• see Cho, B.K. 254, 287
Heimbrodt, W. 10
Harmon. B.N., see Rhee, J.Y. 209 Heimbrodt, w., see Hartmann, Th. 10
Harmon. B.N., see Song, C. 221.256 Heinecke, M. 205
Harmon, B.N.• see Suh, BJ. 214 Heinecke. M.• see Goll, G. 230
Harris, J.G.E. 26 Heinecke. M.• see Shulga, S.V. 233, 241. 281
Harris. R.• see Cochrane. R W. 122 Heitzmann, H.• see Mergel, D. 96
Harrison, J.C., see Zandbergen, H.W. 223 Hellberg. C.S., see Park. Y.D. 74
Hartmann. 0 .. see Frey, E. 315, 320 Hellmann. P., see Steglich, F. 242
Hartmann. Th. 10 Hemley, RJ.• see Eremets, M.I. 274. 276
Hartmann. Th.• see Heimbrodt, W. 10 Henggeler,W., see Gasser. U. 241
Harwit, A.. see Munekata, H. 10 Henn, RW. 238
Hase, K. 205,219 Henn, RW.• see Gulden, Th. 219. 224
Hasegawa,T., see Fukumura, T. 26 Henneberger. S.• see Frey. E. 315. 320
Hasegawa, T.. see Matsumoto. Y.78 Hennel, A.M.• see Mac. W. 19
Hasegawa,T., see Shono, T. 26. 58. 59 Henning. J.C.M. I I I
Hasegawa, Y., see Medvedkin. G.A. 77 Hennings, B.D. 260
Haselwimmer, R.K.W., see Saxena, S.S. 209 Hennion, B.• see Szuszkiewicz, W. 66
Hashimoto. M. 10, 14 Henriques. A.B. 15
Hashimoto. Y.• see Hayashi. T. 9. 26. 34 Herbst, J.C.M. 168. 173
Hashimoto, Y., see Katsumoto, S. 20. 37. 50 Herbst. J.F.. see Pinkerton. F.E. 168, 173
Hass. K.C. 46 Herisson, D.• see Alves. F. 172
Hatano, T.• see Arisawa, S. 219 Herlach. F., see van Bsch, A. 5. 10, 26. 30. 34. 55
Haury, A. 5, 49. 54 Hermann. J., see Zandbergen, H.W. 223
Haury, A., see Dietl. T. 47-49. 53. 54. 74 Hernando. A. 94, 108. 117, 122. 168.309
Hauser, R.• see El-Hagary, M. 245. 253 Hernando. A., see Areas, J. 172
Hauser. R., see Michor, H. 223, 279, 287 Hernando. A., see Fontcuberta, J. 309
378 AUTHOR INDEX
Hernando, A., see Huang, J. 96,109,117 Hirscher, M., see Winzek, B. 137-139
Hernando, A., see Marin, P. 185 Hirschfeld, PJ., see Kubert, C. 270, 271
Hernando, B., see Tejedor, M. 168 Hirst. R.• see Russel. V. 260
Hernando, see Slawska-Waniewska. A. 169 Hison, C.• see Chiriac, H. 169
Herrer, G., see Twarowski, K. 170 Ho. J.e., see Jiang. PJ. 226
Herrmann, J., see Sarrao, J.L. 205 Ho. J.C., see Lin. M.S. 205
Hervieu, M., see Maignan, A. 179 Hodges, J.A. 278
Her.re~G.93, 136, 145, 168, 169, 174 Hodges, J.A., see Bonville, P. 213. 270
Herzer, G., see Tejedor, M. 168 Hodges. J.A., see Godart. C. 220. 242. 260
Hewat, A.W., see Paul, D. McK. 272, 274 Hodges. J.A., see Rams, M. 221
Hidaka, Y., see Luke, G.M. 212 Hodges. J.A .• see Ravot, D. 324. 357
Hien, T.D., see Luong, N.H. 346 Hoellwarth,c.c. 230
Hiess, A., see Rotter, M. 310, 346, 356 Hofmann, B. 136
Higo, Y. 65, 67 Hofmann. M., see Kreyssig, A. 221, 222
Higo, Y., see Grandidier, B. 18 Hohenberg, P.C. 202
Higo, Y.,see Ohya, E. 10 Hohne, R.• see Makarova, T.L. 286
Higo,Y., see Tanaka, M. 67 Hohnston-Halperin, E., see Kawakami. RK. 5, 10,
Hilbers, M., see Garda-Landa, B. 182 63
Hill, J.P. 209 Holtzberg, F., see Methfessel, SJ. 72
Hill, J.P., see Detiefs, C. 221, 222, 241, 242, 245, Holubar, T, see Michor, H. 223
253,254,310,335,357 Holzapfel, B., see mise, K. 205, 219
Hill, N.A .• see Sanvito, S. 42~, 46
Holzapfel, W.B.• see Gratz. E. 317
Hill, RW., see Boaknin, E. 238. 239, 241, 279,
Holzer, D. 168
285
Homrna, M., see Kikuchi, S. 132, 133
Hillberg, M., see Sanchez, D.R. 226, 266
Homma, M .• see Tanaka. T. 132
Hillebrecht, F.U., see Ohldag, H. 20.44,45.50
Honda, F., see Oomi, G. 216,217
Hillenbrand, B. 216,228,240,241,250,278
Honda, K., see Oomi, G. 216. 217
Hillenbrand. B., see Peter, M. 214
Honda, T 119, 133, 186, 187
Hilscher. G. 229, 333, 356
Honda, T. see Arai, K.I. 186. 189
Hilscher, G .• see Divis, M. 242
Honda, T, see Hayashi, Y. 117, 119-121, 133
Hilscher, G .. see EI-Hagary, M. 232, 245, 253, 287
Hong, Z.. see Rukang, L. 221
Hilscher, G., see Gratz, E. 317
Hongping, Z., see Houqing, Z. 185
Hilscher, G .• see Javorsky, P. 326, 357
Hori, H., see Sonoda, S. 14,77
Hilscher, G .• see Lynn, J.W. 216
Horiba, H., see Okabayashi, J. 21
Hilscher, G .. see Manalo, S. 236. 237
Horikoshi, Y., see Shen, A. 7. 54, 58
Hilscher. G.• see Michor, H. 223. 224. 274. 279.
287,288 Homer, G.e., see Teter, J.P. 191
Hilscher. G., see Rotter, M. 310, 346, 347, 356 Horr, P.H., see Wu, M.K. 208
Hinks, D.G .. see Dunlap, B.D. 212,256 Hoser, A., see Kobler, U. 309, 315
Hirakawa. K. 37 Hoser, A., see Kreyssig, A. 221,222
Hirakawa. K., see Katsumoto, S. 20. 37, 50 Hossain. Z. 205. 219, 220, 223. 242. 248-250,
Hiramoto, T.• see Orsier, E. 188 253.271,288
Hirano. T., see Takeya, H. 211 Hossain, Z.• see Allene, E. 242, 246
Hirasawa, M.• see Koshihara, S. 72 Hossain, Z., see Bonville, P. 213, 270
Hirasawa, M.• see Munekata, H. 36 Hossain, Z., see Dhar, S.K. 227, 240-242, 251
Hirasawa, M.• see Oiwa, A. 20-23,31.49.50,55 Hossain, Z., see Godart, e. 218, 220, 242, 260
Hirata. K., see Arisawa, S. 219 Hossain, Z.• see Gupta. L.C. 216. 288
Hirata, K.• see Izawa, K. 240. 285 Hossain, Z.• see Jacobs, T. 216
Hirata, K.. see Sakata. H. 271 Hossain, Z., see Lynn, J.w. 213, 220, 289, 335
Hiroi, M.• see Sera, M. 213 Hossain, Z.• see Mazumdar, Ch. 270
Hirsch, J.E. 27 Hossain, Z., see Meenakshi, S. 216,217,243
Hirscher, M., see Riedi, K. 118, 133, 135, 136 Hossain, Z., see Nagarajan, R 216, 225, 242, 253,
Hirscher, M.• see Schatz. F. 118. 130. 131, 133. 288
135 Hossain, Z., see Rams, M. 221
AUTHOR INDEX 379
Hossain. Z.• see Sanchez.1.P. 219. 220. 224. 225 Ichioka, M.• see Nakai. N. 236
Hossain.Z., see Sinha. S.K. 213 Ibm. 1.. see Kim. H. 223. 224
Houqing,Z. 185 Ikaida, T.• see Matsuda.Y.H. 38
Hovinen,A.• see Kuivalainen, P. 70 Ikeda, S .• see Kit6. H. 273
Hrabovski, D.• see Sadowski.J. 10 Ilegems, M. 19
Hristoforou, E. 106 Iliew, N.• see Staliriski, B. 318. 357
Hsieh. K.C.. see ue. X.c. 19 Ilver, L.. see Sadowski. J. 5. 9. 10. 15. 16.26.62.
Hsu, Y.Y. 209. 210 77
Hsu, Y.Y.• see Lin. M.S. 205 lmada, M.. see Nakano. H. 175
Hu, X.• see Das Sanna, S. 79 Imada, S.• see Ueda, S. 44
Hu, Z.• see von Lips. H. 26(}...262 Inaba, K.• see Fukumura,T. 26
Hu, Z.• see Mazumdar, Ch. 229 Infortuna, A.• see Pasquale.M. 119
Huang.C.Y.. see Taylor. R.E. 311 Inoue. A.• see Makino. A. 169
Huang. J. 96. 109. 117 Inoue. A.• see Suzuki. K. 168
Huang, Q.• see Bourdarot, F. 218 Inoue. F.. see Awano. H. 151
Huang. Q.•see Grigereit, T.E. 205 Inoue. J. 48. 70
Huang. Q.• see He. T. 284. 285 Inoue. J.. see Nonoyama, S. 70
Huang. Q.•see Lynn.J.W 213. 215. 220. 249. Inoue. N.• see Satoh, Y. 9. 24
252.289.335 Inumara,K.. see He. T. 284. 285
Huang. S.• see Krol, A. 17 Ionov, A.M.• see Strukova, G.K. 226
Huang. S.• see Soo, Y.L. 12. 13 Ishibashi.T.• see Medvedkin, G.A. 77
Huang. S.W. see Soo, Y.L. 17 Ishii. K.• see Kuwahara, S. 13. 14
Huang. Z.I.• see Wu, M.K. 208 Ishikawa, M. 211. 212. 285
Hughes. R.I.• see Dugdale.S.B. 230. 240 Ishio, S.• see Ooike, T. 132. 133
Ishiwata, Y.. see Katsumoto, S. 20. 37. 50
Hull. G.W.• see Matthias. B.T. 202
Ishiyama, K.. see Hayashi.Y. 117. 119-121. 133
Hulliger, F. 319
Hulliger, E. see Rupp, B. 207
Ishiyarna, K.• see Honda,T. 119
Hults. WL.. see Nagarajan, R. 288 Islam. A.H.M.Z.. see Dellefs. C. 222. 241. 242.
245.253.254
Hundley. M.P.. see Canfield.P.C. 254
Islam. Z.• see Fisher.I.R. 333. 356
Hundley. M.F.• see Movshovich, R. 265. 266
Islam. Z.• see Song. C. 273. 276
Hundley. M.F.• see Sonier.J.E. 213
ISOLDECollaboration. see Wahl. U. 14
Huong Giang, D.T.• see Due. N.H. 94. 133
Isshiki, M.• see Nohara,M. 268. 269. 279.
Hupfeld, D., see Kobler. U. 309
283-285
Huse, D.A.• see Eskildsen.M.R. 269. 276
Itoh, A.. see Awano. H. 151
Huse, D.A.• see Varon. U. 242. 248. 249. 251.270.
Itoh, H.• see Inoue. J. 48. 70
271
Ivanov. V.Yu., see Kadomtseva, A.M. 180
Huser.D. 244
Ivanov. v.Yu.• see Mukhin. A.A. 181
Hutchings.M.T. 214
Ivanov. V.Yu.• see Popov. Yu. F. 179. 180
Hutchinson. W.G.• see Chapman. R.A. 19.37
lye. Y.• see Akiba, N. 65. 68
Huxley. A. 211
lye. Y.• see Hayashi. T. 9. 26. 34
Huxley. A.• see Aoki, D. 214
lye. Y. see Katsumoto, S. 20. 31. 37.49.50
Huxley. A.• see Saxena. S.S. 209 lye. Y. see Koshihara, S. 72
Hwang. C.-D .• see Kim. H. 223. 224
lye. Y.• see Munekata, H. 36
lye. Y. see Ohno, H. 5. 15-17. 22. 25. 26. 54. 55.
Iannotti. V. 106 57.58
Iavarone. M.• see Andreone. A. 215. 219. 241 lye. Y.• see Oiwa, A. 2~23. 31, 36. 49. 50. 55
Iavarone. M.• see de Wilde. Y. 266. 277 lye. Y.• see Shen. A. 7-9. 11.25.36.54.57.58
Ibarra. M.R. 175. 176. 184. 185 Izawa, K. 240. 260. 285
Ibarra.M.R.• see Blanco.J.A. 342. 343, 356
Ibarra.M.R.. see de Teresa.J.M. 176. 178 Jablonski. R.. see Szczytko,J. 19
Ibarra. M.R.• see Garcia-Landa, B. 176. 177. 182 Jacobs. T. 216
Ibarra. M.R.• see Morellon, L. 309. 336-339. 356. Jacobs-Cook. A.I.• see Gibbs. M.R.I. 94
358 Jaenicke-Rossler. U.• see Belger,A. 335
380 AUTHOR INDEX
Jaenike-Roessler, U. 277 Jonker, I.T. 70

Jahnes, C.V., see Klokholm, E. 106 Iorgensen, J.D., see Dabrowski, B. 181
Jambrich, C., see EI-Hagary,M. 245, 253 Jorgenson, J.D., see Dunlap, B.D. 212
James, S.S. 267 Joss, w.. see GoD, G. 230
James, S.S., see Dewhurst. C.D. 202, 205, 220, Jouanne, M.• see Szuszkiewicz, W. 66
267,277 Julian, S.R.• see Brison, J.P. 220, 283
Janak, I.F.315 Julian, S.R.• see Saxena. 5.5. 209
Janocko, M.A., see Gavaler, J.R. 273 Jungwirth, T. 27,49,53,55,60.66.74
Jansen, A.G.M., see GoD, G. 230 Jungwirth, T., see Abolfath, M. 25. 49. 52, 54, 55,
Jansen, A.G.M., see Rybaltchenko, L.F. 267, 277 57,58
Jansen, A.G.M., see Yanson,I.K. 276 Jungwirth, T., see Lee. B. 49, 54. 60. 74
Jansen, J., see Zandbergen, H.W. 219 Iunod, A.• see Peter. M. 214
Janzen, E., see Linnarson, M. 19 Jurek. K.• see Javorsky, P. 325-327
Jarlborg, T., see Dugdale, S.B. 230, 240 Just. G. 262
Iarosz,J. 326,327, 357
Jaroszyriski,J., see Ferrand. D. 5, 27,49, 54, 60
Kacman,P. 46. 52
Jaroszyriski, J., see Wojtowicz,T. 32
Kacman, P.• see Blinowski, J. 47. 51, 76
Javorsky, P. 325-327, 357
Kadomtseva, A.M. 180
Javorsky. P.• see Andreev, A. 325. 327, 356
Jedrzejczak, A.• see Osinniy, V. 33 Kadomtseva, A.M., see Popov. Yu. F. 179. 180
Kadono, R.• see Luke. G.M. 212
Jee. C.S. 323. 357
Kadowaki, K., see Arisawa, S. 219
Jehan, D.A. 159
Jensen, I. 220. 312. 314 Kadowaki, K.• see Kawano, H. 266. 267
Jensen, I., see Nergaard, K. 225 Kadowaki, K.• see Sera, M. 213
Jepsen, 0., see Gulden. Th. 219. 224 Kadowaki, K.• see Takeya, H. 211
Jerems, F. 117 Kaganov,M.I., see Lifshits, I.M. 258
lesser, R. 317, 357 Kagayama,T.• see Matsuda. N. 210
Iestadt, Th., see Nagarajan, R. 288 Kagayama,T.• see Oomi, G. 216, 217
liang, Ch.• see liang. X. 119 Kaindl, G., see von Lips, H. 260--262
Jiang. H.W.• see Vrijen, R. 79 Kaindl, G.• see Mazumdar, Ch. 229
Jiang. P.I. 226 Kaiser, C.T., see Mulders. A.M. 322. 357
Jiang. X. 119 Kalatsky, VA 242, 266
Iianguo, L.. see Houqing, Z. 185 Kalatsky, VA, see Canfield, P.C. 215
Jin, S. 175 Kalmer, G., see Gebicki, W. 13
Iohansson, B., see Ravindran, P. 229 Kalogirou, 0., see Speliotis, A. 119
Johnson, M.I.•see Shelton. R.N. 207. 208 Kalvius, G.M.• see Frey, E. 315, 320
Johnston. D.C.• see Canfield, P.C. 254 Kalychak, Y.M. 331
Johnston. D.C., see Cho. B.K. 220. 241-243, 245, Kamata, K., see Izawa, K. 260
249,254,256.257.260.261,267,269.287 Kamatani, T. 76, 78
Johnston. D.C., see Fertig, W.A. 205 Kamilov, K.I., see Kadomtseva, A.M. 180
Johnston. D.C., see Goldman, A.I. 233 Kamiriska, M., see Zajac, M. 13
Johnston. D.C., see Johnston-Halperin, E. 209 Kanamura, M. 73
Johnston. D.C., see Kogan, V.G. 273 Kanamura, M.• see Hashimoto, M. 10, 14
Johnston. D.C.• see Mun, M.O. 230 Kanda, EA .• see Russel, V. 260
Johnston, D.C.• see Sub, B.I. 214 Kane, B.E. 79
Johnston, D.C.• see Xu. M. 225 Kaneko, H., see Wada, M. 118, 122, 133, 135
Johnston, D.C.• see Zarestky, J. 230 Kaneko, T., see Ohashi, M. 329
Johnston-Halperin, E. 71, 209 Kaneko, T., see Ohta, S. 350, 351, 356
Johnston-Halperin, E., see Canfield, zc. 215 Kanemitsu, Y.• see Ando, M. 38
Johnston-Halperin, E.• see Kawakami. R.K. 75 Kaneyoshi 130
Jones, C.K.• see Gavaler, J.R. 273 Kang, I.K., see Lim, S.H. 132, 133
Jones, R.V., see Smith, A.B. III Kanis, J.M., see Havinga, E.E. 205
Jones. T.E. 218, 221 Kanski, J., see Sadowski, J. 5, 9, 10, 15, 16,26,
Jonker, B.T.• see Park. Y.D. 74 62, 77
AUTHORINDEX 381
Kao, Y.H., see Krol, A. 17 Keller. 1. 235

Kao, Y.H.,seeSoo. Y.L. 12.13. 17 Keller, N.• see Brison. J.P. 220. 283
Kaplan. N. 316. 357 Keirn, M., see Fiederling, R 70
Karl, W., see Gibbs. M.R.1. 94, 188 Kelsch, M., see Fischer. S.F. 139, 140
Karlsteen, M.• see Sadowski, J. 9, 16.62.77 Kenett, M.P. 60
Karlsteen, M.• see Szuszkiewicz, W. 66 Kepa, H. 66
Karrai, K.• see Liu, S. 37 Kemavanois, N.• see Huxley, A. 211
Kasai, M.• see Kuwahara. H. 178 Kes, P.H.• see Saba. N. 225
Kashevarova.. L.N.• see Makarova.. T.L. 286 Khmelevskyi,S.•see Divis. M. 242
Kastner, M.A., see Aharony, A. 208 Khodorkovsky, Y.• see Koksharov, Yu.A. 168
Kasuya, T. 4 Khotkevich, V.I., see Shubnikov,L.V. 228, 232,
Kataev, G.I., see Belov, K.P. 126 233.240.241
Kataoka, N., see Fujimori, H. 120 Kieft. RE. see Luke. G.M. 212
Kataoka. N.• see Suzuki. K. 168 Kihara.. T., see Okabayashi, J. 21
Katayama. T.. see Awano. H. 151 Kiiko, Y.M.• see Strukova.. G.K. 226
Katayama-Yoshida.. H. 76 Kikkawa, J.M. 75. 79
Katayama-Yoshida, H., see Kato, R 43. 77 Kikkawa, J.M.• see Malajovich, I. 79
Katayama-Yoshida, H., see Sato, K. 43, 75, 76 Kikkawa, J.M., see Salis. G. 79
Katayama-Yoshida. H., see Yamamoto. T. 29. 33 Kikuchi, S. 132, 133
Kato, R. 43, 77 Kikuchi, S., see Tanaka.T. 132
Kato, R., see Katayama-Yoshida. H. 76 Kilcoyne, S.H., see Cywinski. R. 207
Kato, Y.• see lzawa, K. 240. 285 Kim. D., see Belov,K.P. 126
Kato. Y., see Kawakami. RK. 75 Kim. D.H.• see Lee, K.H. 276. 288
Kato. Y., see Salis. G. 79 Kim. H. 223. 224
Katsui, A.• see Shibata. N. 5 Kim, H.-J., see Choi, J.-H. 266
Katsumoto, S. 9. 20,31,37.49.50
Kim. H.B., see Cho. B.K. 278
Katsumoto, S., see Akiba, N. 65. 68
Kim. H.1.• see Lim. S.H. 142
Katsumoto, S., see Hayashi. T. 9. 26. 34
Kim. I.G.• see Lee. J.I. 205
Katsumoto, S., see Koshihara, S. 72
Kim. 1.. see Song, C. 284. 285
Katsumoto, S., see Munekata, H. 36
Kim, J.Y. 120. 133
Katsumoto, S.• see Ohno, H. 5, 15-17,22.25.26.
Kim. J.Y., see Fujimori, H. 120
54,55,57.58
Kim. K.S., see Strom, V. 205
Katsumoto, S .• see Oiwa, A. 20-23. 31. 36, 49. 50.
Kim. M.• see Freeman. A.1. 105, 109
55
Katsumoto, 5., see Shen, A. 7-9. 11.25, 36,54.
Kim. M.S.• see Mun, M.O. 216, 217
57.58
Kim. S.• see Soo, Y.L. 12. 13
Kaufmann. U.. see Schneider. J. 19 Kim, S.G., see Novosad. V. 189, 190
Kaul. A.R. see Abramovich, A.I. 178. 179 Kim. S.R., see Lim. S.H. 132. 133
Kaul. S.N. 320 Kim. Y.B.• see Yeo J. 27
Kawae, T., see Choi. J.-H. 266 Kimball. C., see Dwight, A. 126
Kawai,T., see Saeki, H. 9. 24. 78 Kimball. C.W., see Dabrowski. B. 180. 181
Kawai.T., see Ueda, K. 20. 46. 78 Kimura. A.. see Okabayashi, J. 13. 21. 31. 44-46.
Kawakami.M., see Kobler. U. 309. 315 50,55
Kawakami.R.K. 5. 10, 63, 75 Kimura, T. 181-183
Kawakami,R.K., see Johnston-Halperin, E. 71 Kimura. T., see Shimizu. K. 231
Kawamura.. M.• see Hayashi, T. 26 Kimura, Y.• see Koyanagi, A. 346
Kawanishi, K., see Awano, H. 151 King. A.1.• see Russel. V. 260
Kawano, H. 266. 267 Kini. A.M., see Williams. J.M. 209
Kawano-Furukawa, H. 209 Kinoshita, K., see Uehara. M. 216, 217. 264
Kawasaki, M., see Matsumoto, Y. 78 Kioseoglou, G., see Soo, Y.L. 12, 13
Kayzel, EE., see Mulders, A.M. 322, 357 Kioseoglow, G., see Jonker, J.T. 70
Kayzel, F.E., see Yaouanc, A. 322 Kirby.RK.• see Taylor. R.E. 311
Kealey.P.G.• see Paul, D. McK. 258 Kirby. R.K.• see Touloukian, Y.S. 320
Keller, H.• see Garda-Landa, B. 176. 177 Kirchmayr, H.• see Burzo, E. 339
382 AUTHOR INDEX
Kirchmayr, H.• see Poldy, C.A. 351. 356 Koida, T., see Matsumoto, Y. 78
Kirkpatrick. T.R.• see Belitz. D. 48 Koike.1., see Novosad. V. 189, 190
Kirschner. J.• see Gutjahr-Loser,Th. 104. 114 Koinuma, H.• see Fukumura, T. 26
Kirschner. 1.. see Sander. D. 106, 107, 113 Koinuma, H.• see Matsumoto. Y. 78
Kislov, V.v., see Gubin, S.P. 168 Kojima, A., see Makino. A. 169
Kiss. T.• see Yokoya, T. 243 Koksharov, Yu.A. 168
Kitagawa, I.. see Ogawa, T. 17.42.43 Kolesnik, S.• see Dabrowski. B. 180, 181
Kitagawa, I.• see Shirai. M. 17.41 Kolesnik, S.• see Ferrand, D. 5. 27, 49, 54. 60
Kitaguchi, H.• see Arisawa, S. 219 Kolesov,V.V.• see Gubin, S.P. 168
Kitai. T.• see Ohla, S. 350. 351, 356 Koleswicki,S., see Sadowski. J. 15.26
Kitakami, 0 .. see Novosad. V. 189. 190 Komarovskaja, L.P. 327
Kitamoto, Y., see Yanagi, S. 66 Komelj. M.• see Fahnle, M. 105
Kitazawa, H.• see Kito. H. 273 Konczykowski. M.• see Izawa, K. 240, 285
Kito, H. 273 Kondo, T.• see Kuwabara, S. 13, 14
Kiwata, H.• see Okabayashi, J. 21 Kondo, T.• see Moriya, R. 12
Klamut, P.W.• see Dabrowski. B. 181 Kondo. T., see Soo, Y.L. 13
Klar, PJ.• see Hartmann. Th. 10 Konig. 1. 54. 55. 61. 71
Klar, PJ.. see Heimbrodt, W. 10 Konig, J.• see Dietl. T. 49, 59
Klausen. S.N., see Nfllrgaard. K. 225 Konig, J•• see Schliemann, J. 61
KlauB. H.-H.• see Sanchez, D.R. 226. 266 Konishi. S. 108
Klavins, P.• see Hoellwarth, c.c. 230 Kono, J•• see Matsuda. YH. 38
Klavins, P.• see Lynn.1.w. 220. 226. 242. 244,
Kontani, K., see Shimizu. K. 231
245,247-249,253.256,276
Kopcewicz, M.• see Stobiecki, T. 109
Klavins, P., see Shelton. R.N. 207. 208
Kopelevich, Y.• see Makarova, T.L. 286
Klavins, P.• see Stanley, H.B. 218
Koroleva, L.1. 178
Klehe, A.-K.• see Looney,C. 208
Koroleva,L.I.. see Abramovich, A.1. 178. 179
Klein, M.V.• see Yang.I.-S. 229
Koroleva,L.I.. see Demin, R.V. 178
Kleverman, M.• see Linnarson, M. 19
Kortan, A.R., see Rosseinsky, MJ. 209
Kloc. Ch.• see Schon, 1.H. 203. 205. 206, 238. 259
Kortus, 1. 244
Klokholm. E. 106
Kosaka, M.• see Eto, T. 181
Klosowski. J••see Buchgeister, M. 220
Kosaka, M., see Yamauchi. H. 231
KmieC. R.• see Bialic, D. 328. 356
Koshelev, A.• see Metlushko, V. 240
Knupfer, M.• see von Lips. H. 260-262
Kobayashi. N.• see Ohnuma, S. 173. 174. 189 Koshelev, A.E.• see de Wilde. Y. 266. 277
Koshihara, S. 72
Kobayashi. N.• see Sera, M. 213
Kobayashi. S., see Sera, M. 213 Koshihara, S., see Haneda, S. 12
Kobler. U. 309. 315 Koshihara, S.• see Matsumoto. Y 78
Koch, R., see Weber. M. 106 Koshihara, S.• see Munekata, H. 36
Kocbetkov, V.N.• see Freudenberger, J. 289 Kosobudsky, I.D.• see Koksharov, Yu.A. 168
Kochetkov, V.N.• see Narozhnyi, V.N. 235-238. Kossacki, P. 49, 74
248-252.271 Kossut, J. 5
Kodhihara, S.• see Haneda, S. 5, 12 Kossut, 1., see Furdyna, J. 5
Koepernik, K.. see Drechsler.S.-L. 228. 229. 234 Kosugi, M., see Ekino, T. 259
Koepernik, K.• see Rosner, H. 205. 206. 228-230. Kotani, T. 44
233,235 KOllar. A.• see Gratz. E. 317
Kogan. V.G. 207. 273 Koyanagi, A. 346
Kogan. V.G., see Cheon, K.O. 227, 229 Krajewski, lJ.. see Carter. SA 202, 205. 224
Kogan. V.G., see Eskildsen. M.R. 265 Krajewski, lJ.. see Cava, RJ. 202, 205. 220. 223.
Kogan. V.G., see Gammel, P.L. 267, 277 240,242,283
Kogan. V.G.• see Gurevich. A. 205 Krajewski. lJ.. see Eisaki, H. 231, 240
Kogan. V.G.• see Miranovic, P. 222 Krajewski, Ll., see Grigereit, T.E. 205
Kogan. V.G.• see Vinnikov, L.Ya. 260. 264, 273 Krajewski, r.r, see Lynn, J.w. 213. 215. 249. 252
Kohl. F., see Schneider. J. 19 Krajewski, r.r., see Siegrist, T. 218. 246. 247, 251.
Kohmoto, M.• see Shiraishi. J. 272 253.270,335
AUTHOR INDEX 383
Krajewski, 1.1., see Takagi, H. 215, 230, 241 Kubert, C. 270, 271
Krajewski, 1.1., see Zandbergen, H.W. 219, 220, Kubo, T., see Ofuchi, H. 17
242,266 Kuboya, K., see Takanaka, K. 219, 226
Kramer, U., see Behr, G. 225 Kuijpers, EA., see van Vucht,l.H.N. 322
Kramers, H.A. 265 Kuivalainen, P. 32, 70
Kratzer, A., see Frey, E. 315, 320 Kulatov, E. 43
Kraus, L. 109, III xeue, M.L., see Bulaevskii, L.N. 226
Krause, A., see Wagner, T.A. 231, 285 Kumai, R., see Kuwahara, H. 178
Krause, E, see Berger, R. 188 Kumakura, H., see Arisawa, S. 219
Krause-Rehberg, R., see Luysberg, M. 7, 33 Kumiski, M., see Twarowski, K. 170
Krebs, 1.1. 18 Kunimoto, T., see Nagai, Y. 37,49
Kreisel, 1. 18 Kunkel, H.P., see Stampe, P.A. 324
Kreitzman, S.R., see Luke, G.M. 212 Kurochkin, L., see Tomilo, Zh. 219, 220, 226
Kremer, R.K., see Bernhard, e. 213 Kuroiwa, T. 38, 39
Kremer, R.K., see Gulden, Th. 219, 224 Kuroiwa, T., see Shen, A. 7-9, 11,25,36,54,57,
Kremer, R.K., see Henn, R.W. 238 58,61,62
Kremer, R.K., see Simon, A. 227 Kuroiwa, T., see Sugawara, Y. 32
Krendelsberger, R., see Michor, H. 223, 279, 288 Kusz, 1. 352-354, 356
Kresse, G., sa Lindbaum, A. 345 Kusz, 1., see larosz,l 326, 327, 357
Kreyssig, A. 205, 221, 222, 262 Kutner-Pielaszek, 1., see Kepa, H. 66
Kreyssig, A., see Dertinger, A. 216, 217, 264, 266 Kuwabara, S. 13, 14
Kreyssig, A., see Drechsler, S.-L. 228, 229, 234 Kuwabara, S., see Soo, Y.L. 13
Kreyssig, A., see Freudenberger, 1. 219, 224, 225, Kuwahara, H. 178
236,237,266,279,287 Kuwahara, H., see Hayashi, T. 176
Kreyssig, A., see Loewenhaupt, M. 273 Kwak, r.r, see Jones, T.E. 218, 221
Kreyssig, A., see Muller, K.-H. 250, 256 Kwok, W.K., see Dunlap, B.D. 212
Krikorian, N.H., see Giorgi, A.L. 226 Kwok, wx., see Williams,l.M. 209
Krikorian, N.H., see Krupka, M.C. 205 Kwon, S.K., see Park, 1.H. 44, 45
Krishnan, R., see Szymczak, H. 151
Krishnan, R., see Zuberek, R. III, 151
Krol, A. 17 Laabs, ED., see Vinnikov, L.Ya. 260, 264
Krolas, K., see Rams, M. 221 Lacerda, A. 205, 217, 220, 251, 289
Kronmllller, H., see Farber, P. 133, 139, 140, 145, Lacerda, A., see Canfield, P.C. 215
147, 148, 158 Lacerda, A.H., see Beyermann, W.P. 270
Kronmilller, H., see Fischer, S.E 139, 140 Lacerda, A.H., see Christianson, A.D. 236
Kronmilller, 1-1., see Hofmann, B. 136 Lacerda, A.H., see Schmiedeshoff, G.M. 205, 206,
Kronrnuller, H., see Riedi, K. 118, 133,135, 136 230
Kronmilller, H., see Schatz, E 118, 130, 131, 133, Lacerda, A.H., see Yatskar, A. 272
135 Lachovicz, H.K. 109
Kronmuller, H., see Winzek, B. 137-139 Lachowicz, H.K., see Slawska-Waniewska, A. 169
Krug, K., see Drechsler, S.-L. 234 Lachowicz, H.K., see Twarowski, K. 170
Krug, K., see Peng, Z.Q. 209 Lafford, A. 156
Krug, K., see Shulga, S.V. 233, 241, 281 Lai, C.C. 276
Krug, K., see Winzer, K. 234 Lai, C.C., see Ku, H.e. 284, 285
Krug von Nidda, H.-A., see Heimbrodt, W. 10 Lamelas, F.1., see Lee, CH, 113
Kruk, R., see Bialic, D. 328, 356 Lampalzer, M., see Hartmann, Th. 10
Krupka, M.e. 205 Lampalzer, M., see Heimbrodt, W. 10
Krupka, M.e., see Giorgi, A.L. 226 Landau, L.D., see Ginzburg, V.L. 210
Ku, H.C. 205. 219, 220,284,285 Lang, lL., see Song, C. 284, 285
Ku, H.C., see Hsu, Y.Y. 209,210 Lang, M., see Steglich, F. 242
Ku, H.C., see liang, P.1. 226 Langousche, G., see Wahl, U. 14
Ku, H.C., see Lai, c.c. 276 Lanoue, L., see Iannotti, V. 106
Ku, H.C., see Lin, M.S. 205 Lappas, A., see Prassides, K. 231, 240
Ku, K.C., see Potashnik, S.1. 5, 9, 34, 50, 56, 77 Larkin, A.I. 227, 228
384 AUTHOR INDEX
Latroche, M. 317 Lhermet, N., see Claeyssen, F. 185, 187, 188

Latroche, M., see Gratz, E. 317 Lhermet, N., see Halstrup, B. 187
Latroche, M., see Mazumdar, Ch. 234, 235 Lhotel, E., see Aoki, D. 214
Lawrie, D.D. 241 Li, H.S., see Gavigan, 1.P. 123
Le, L.P. 235 Li. S., see Rathnayaka, K.D.D. 227, 278
Le, L.P., see Luke, G.M. 212 Li, Y., see Rukang, L. 221
Le Gall, H. lll, 143, 147, 148 Li, Y.X., see Wang, B.W. 94
Le Gall, H., see Due, N.H. 168 Lieber. C.M., see Eskildsen, M.R. 267, 269. 276
Le Letty, R., see Claeyssen, F. 185, 187, 188 Lienard, A., see Chappert, J. 116
Lebedev, S.P., see Mukhin, A.A. 181 Lienard, A., see Coey, 1.M.D. 126
Lebenbaum, D., see Kaplan. N. 316, 357 Lienard,A.• seeDue,N.H.94,1l7-119,126.
LeBihan, T., see Lindbaum, A. 345 131-133
Lee, B.49, 54,60, 74 Lifshits, I.M. 258
Lee, B.H., see Jungwirth, T. 49, 53, 55, 60, 66, 74 Liliental-Weber, Z., see Luysberg, M. 7, 33
Lee, C.H. 113 Lim, S.H. 132, 133, 142
Lee, E., see Sala, R. 243 Lim, S.H., see Pasquale, M. 119
Lee, E.W., see Burd, J. 316, 357 Lin, C.L. 318
Lee.I.H., see Choi, C.K. 262 Lin, C.L., see Jee, C.S. 323, 357
Lee, 1.1. 205 Lin, H.-H., see Konig, 1. 54, 55, 61, 71
Lee, 1.0., see Cava, R.I. 202, 205, 220, 223, 240, Lin, H.-H., see Sehliemann, 1. 61
242 Lin, M.S. 205
Lee, 1.0., see Eisaki, H. 231, 240
Lin, M.S., see Jiang, P.J. 226
Lee, 1.0., see Takagi, H. 215, 230, 241
Lin, M.S., see Lai, c.c. 276
Lee, K.H. 276, 288
Lin, S.H., see Lin, M.S. 205
Lee, M., see Lee, K.H. 276, 288
Lindbaurn, A. 312, 317, 345
Lee, S.-I., see Cho, BK 278
Lindbaurn, A., see Andreev, A. 325, 327, 356
Lee, S.-I., see Choi, 1.-H. 266
Lindbaum, A., see Gratz, E. 309. 317, 325. 329,
Lee, S.-I., see Yang, I.-S. 229
341,346-348,356,357
Lee, S.I., see Lee, K.H. 276, 288
Lindbaum, A., see Rotter, M. 310, 314, 344,
Lee, S.I., see Mun, M.a. 216, 217, 230
346-350,356
Lee, S.L., see Cywinski, R. 207
Linnarson, M. 19
Lee, S.L., see Paul, D. MeK. 258, 269, 276
Lipatnikov, V.N., see Gusev, A.I. 219
Lee, S.R., see Lim, S.H. 132, 133
Lipp, D. 226, 283
Lee. W.C.,see Mun, M.a. 216, 217. 230
Lipp, D., see Belger, A. 335
Lee, W.H. 205, 251, 276
Lipp, D., see Drechsler. S.-L. 228, 229, 234
Lees, M.R., see Garda-Landa, B. 176, 177, 182
Lees, M.R., see Tomy, C.V. 256, 258, 259 Lips, von H. 260-262
Lister, S.J.S., see Boothroyd, A.T.223
Lefeld-Sosnowska, M., see Zaj~, M. 13
Legvold, S., see Nigh, H.E. 320 Litfin, K., see Lindbaum, A. 345
Leja~~279,280,283,284
Litterst, F.J., see Sanchez, D.R. 226, 266
Lejay, P., see Brison, 1.P. 220, 283 Littlewood, P., see Saxena, S.S. 216, 217
Lenezowski, SKJ., see Brabers, 1.H.V.J. 272 Litvinov, V.1. 48
Leroux-Hugon, P. 36,51 Litvinov, V.I., see Eggenkamp, P.T.J. 60
Leroy, E., see Alieno, E. 225, 226, 260, 263, 264 Liu, H.C., see Shen, A. 9, 15, 16
Lethuillier, P., see Bouvier, M. 310 Liu, J.P. 123
Letoublon, A., see Song, C. 284, 285 Liu, S. 37
Levin, E.M. 336 Liu, X. 5, 26
Levin, K. 235 Liu, X., see Baxter, D.V. 32
Levin, K., see Nass, M.J. 258 Liu, X., see Chen, X. 10
Levitin. R.Z .• see Borombaev, M.K. 346, 348. 349 Liu, X.c. 19
Levy-Clement, c., see Godart, C. 218 Liu, Z.X., see Wang, J.H. 176
Levy-Clement, C., see Gupta, t,c. 216, 288 Lloyd, S.H., see Paul, D. MeK. 258, 269, 276
Levy-Clement, C., see Hossain, Z. 219 Locquet, J.P., see Berger. R. 188
Levy-Clement, C., see Mazumdar, Ch. 234, 235 Loewenhaupt, M. 273
AUTHOR INDEX 385
Loewenhaupt, M.• see Derringer, A. 216. 217. 264. Lynn. J.W.• see Bourdarot, F.218
266 Lynn. J.W.• see Choi, S.-M. 271
Loewenhaupt. M.• see Doerr. M. 335 Lynn, J.W.• see Femandez-Baca, J.A. 21 I
Loewenhaupt, M.• see Drechsler. S.-L. 234 Lynn, is«. see Godart. C. 220, 242. 260
Loewenhaupt, M.• see Freudenberger, 1. 219. 224, Lynn, J.w.. see Grigereit, T.E. 205
225.236.237,279 Lynn. J.w.. see Sinha, S.K. 213
Loewenhaupt, M.. see Kreyssig, A. 205,221,222. Lynn, J.w., see Skanthakumar, S. 221, 241. 242.
262 245,252,268
Loewenhaupt, M.• see Muller, K.-H. 250. 256 Lynn, 1.w., see Stanley. H.B. 218
Loewenhaupt, M.• see Rotter, M. 223, 310. 311, Lynn, J.W., see Thomlinson, W. 234
314,344.346-350.356 Lyu,P.67
Loewenhaupt, M.• see Sierks, C. 275
Loewenhaupt. M.• see Svoboda, P. 345
Ma, S.-K. 50
Lofgreen, D.• see Johnston-Halperin, E. 71
Ma. S.-K., see Fisher, M.E. 61
Lohneysen, H. von. see Gaymann, A. 37
Mac, W.19
Lohneysen, H. von. see Pfleiderer.C. 226. 237
Mac, W.• see Szczytko, 1. 38.40,41,47,50
Loidl, A.• see Heimbrodt, W. 10
MacCarthy, K.T., see Overberg, M.E. 13
Loidl, A.• see Mukhin, A.A. 181
MacDolnald, A.H., see Jungwirth, T. 49, 53, 55,
London. F. 216
60,66,74
London. H.• see London. F. 216
MacDonald, A.H., see Abolfath, M. 25, 49, 52, 54,
Lonzarich, G.G.• see Brison. J.P. 220. 283
55,57.58
Lonzarich, G.G.• see Pfleiderer, C. 226. 237
MacDonald. A.H., see Dietl, T. 49, 59
Lonzarich, G.G., see Saxena, S.S. 209
MacDonald, A.H., see Jungwinh, T. 27
Look. D.C. 7
MacDonald, A.H., see Konig. J. 54. 55,61,71
Looney. C. 208
Loong. C.-K.• see Sierks, C. 275 MacDonald, A.H., see Lee. B. 49. 54, 60, 74
Lopez. D.• see Choi, S.-M. 271 MacDonald, A.H., see Schliemann, J. 61
Lopez. D., see Eskildsen, M.R. 273, 274 Machida, K. 206. 211. 266
Lopez, D., see Gammel, P.L. 223 Machida, K.• see Nakai, N. 236
Lopez. D., see Gammel. P.L. 273 Mackay. K., see Bell, J. 94, 120, 121, 133
LOpez, D., see Gammel, P.L. 279 Mackay, K., see du Tremolet de Lacheisserie, E.
Lorberth, L., see Hartmann. Th. 10 186
Lord, D.G., see Grundy, PJ. 117 Mackay, K., see Due, N.H. 94, 103. 119, 123-127,
Lord, D.G.• see Williams. P.I. 119. 122. 133 129, 130, 133
LOser. W.. see Behr, G. 219, 225 Mackay, K., see Givord, D. 120. 133, 141, 163,
LOser. w., see Bitterlich, H. 210. 287, 288 165
Loser, W., see Drechsler, S.-L. 229 Mackay, K.• see Halstrup, B. 187
Loss, 0.79 Mackay, K., see Orsier, E. 188
Lottermoser, L., see Song, C. 273. 276 Mackay, K., see Quandt, E. 94, 141, 157. 158, 188
Louriero da Silva 62 Mackintosh. A.R., see Jensen, J. 312, 314
Lozovan, M.. see Chiriaco H. 169 MacLaughlin, D.E., see Le. L.P. 235
Lubitz, P.• see Forester. D.W. 117 MacMorrow,D.F., see Swaddling. P.P. 159
Ludescher, B., see Riedi. K. 118, 133. 135, 136 Magnea, N.• see Baron. T. 5
Ludwig, A. 129. 143. 145-147. 149, 154. 185 Mahadevan, P. 78
Ludwig. A., see Quandt. E. 94, 103, 119. 133. Mahendiran, R., see Ibarra, M.R. 184. 185
141, 142. 144. 149. 150, 157, 158, 166. 188 Maignan, A. 179
Luke. G.M. 212 Maignan, A., see Respaud, M. 179
Luong. N.H. 346 Mailhiot, C. 208
Lupien. C.• see Boaknin, E. 238. 239. 241. 279. Malta, J.P., see Matthias. B.T. 202
285 Majewski, J.A.• see B1inowski, J. 47, 51. 76
Luysberg, M. 7, 33 Majkrzak, C.F., see Kepa, H. 66
Lynn, J.W. 209, 211, 213, 215. 216, 220, 226, 242, Majumdar. P., see Ye,J. 27
244.245,247-249.252,253.256,276,278, Mfu. F., see Makk, 1. 29, 33
289.335 Makarova, T.L. 286
386 AUTHOR INDEX
Makhija, A.V., see Rosseinsky, M.J. 209 Maska, M.M. 216, 217
Maki, K. 240, 281, 282 Massalami, M. 335
Maki, K., see Izawa, K. 260 Masterov, V.E 19
Maki, K., see Shiraishi, 1. 272 Mastukura, E, see Beschoten, B. 41, 47
Maki, K., see Wang. G.-E 238 Masumoto, T., see Makino, A. 169
Maki, K., see Won, H. 284 Masumoto, T., see Ohnuma, S. 173, 174, 189
Makino, A. 169 Masumoto, T., see Suzuki, K. 168
Makino, A., see Suzuki, K. 168 Matheny. A., see Beach, R.S. 159
Malajovich, I. 79 Mathieu, P., see Sadowski, 1. 9. 16,77
Malajovich, I.• see Beschoten, B. 41, 47 Mathieu, R. 175
Malajovich, I., see Kawakami, R.K. 75 Mathieu, R., see Sadowski. 1. 62
Malik, S.K., see Dunlap, B.D. 212,256 Matsuba, K., see Sakata. H. 271
Mallik, R. 310 Matsubara, T., see Machida, K. 206, 211, 266
Malli)(, Roo see Paulose, P.L. 340 Matsuda, N. 210
Manago, T., see Akinaga, H. 13, 78 Matsuda, N., see Oomi, G. 216, 217
Manalo, S. 236, 237 Matsuda, Y., see Izawa, K. 240, 260. 285
Manalo, S., see Michor, H. 274 Matsuda, Y.H. 37, 38
Mandai. P. 205, 208, 211
Matsukura, E 7, 9,21,29,30,48-50,55.56,63
Manfrinetti, P., see Cimberle, M.R. 227
Matsukura, E, see Abe, E. 14, 15,71
Manini, P., see Andreone, A. 219 Matsukura, E, see Akiba, N. 65,68.69
Mano, T.• see Okabayashi, 1. 21
Matsukura, F., see Ando, M. 38
Mano, T., see Yamada, M. 13
Matsukura, E, see Arata, I. 47, 63
Mantler, M., see Gratz, E. 317
Matsukura, E, see Chiba, D. 65, 66
Mao, H.-K., see Eremets, M.I. 274, 276
Matsukura, E, see Dietl, T. 23, 25.29,40,41.47,
Maple, M.B. 215, 230
49-58,73-75,77
Maple, M.B., see Bauer, E.D. 214
Matsukura, E, see Fukurnura, T. 26
Maple. M.B., see Fertig, W.A. 205
Matsukura, E, see Guo. S.P. 7,10
Maple, M.B., see Fischer, 0. 208, 212, 216
Matsukura,E, see Harris, J.G.E. 26
Maple, M.B., see Luke, G.M. 212
Matsukura, E, see Katsumoto, S. 31, 49
Maple, M.B., see Rathnayaka, K.D.D. 227, 278
Matsukura, E, see Kuroiwa, T. 38, 39
Maple, M.B., see Sarrao, 1.L. 205
Matsukura, F., see Matsuda. Y.". 37, 38
Maple, M.B., see Zandbergen, H.W. 223
Maranowski, K.D., see Harris, 1.G.E. 26 Matsukura, E, see Nagai, Y. 37,49
Marchevsky, M.• see Saha, N. 225 Matsukura, E, see Nojiri, H. 19
Mariette. H., see Kulatov, E. 43 Matsukura, E, see Ofuchi, H. 17
Marin. P. 185 Matsukura, F.. see Ohldag, H. 20, 44, 45, 50
Marinescu, C.S.• see Chiriaco H. 169. 185 Matsukura, E, see Ohno, H. 5,15-17,22,24-26,
Markert.l.T., see Luke. G.M. 212 28,54,55,57,58,68,69,74
Markosyan. AS., see Borombaev, M.K. 346, 348, Matsukura, E, see Ohno, Y. 63, 64, 70, 71, 73
349,351,356 Matsukura, Foo see Oiwa, A. 20-23, 31.49, 50. 55
Marques, G.E., see Rodrigues Bitterncourt, A.C. Matsukura, E, see Omiya,T. 10,30-33,47,55
69 Matsukura, E, see Shen, A. 7-9, II, 15, 16,25.
Marquina, C; see Blanco, 1.A 342, 343, 356 36,54,57,58,61,62
Marquina, C.• see de Teresa, J.M. 176, 178 Matsukura, E, see Shono, T. 26, 58, 59
Marquina, C.• see Garda-Landa, B. 182 Matsukura, E. see Sugawara, Y. 32
Marquina, C., see Ibarra, M.R. 175, 176, 184, 185 Matsukura, F.. see Szczytko, 1. 38,40,41.47.50
Marre. D., see Cimberle, M.R. 227 Matsukura, E, see Takamura, K. 7
Martin. C., see Maignan, A. 179 Matsukura, E, see Tsuruoka, T. 18
Martin. C .• see Respaud, M. 179 Matsukura, E. see Ueda, S. 44
Martin, 1.M., see Tomy, C. V. 206, 258 Matsukura, E, see Yang, 1. 9
Martino, L., see Pasquale, M. 119 Matsukura, E. see Zhao, 1.H. 10
Martynovich, A., see Kogan. V.G. 273 Matsumoto, H. 227, 228. 230
Maruyama, K., see Novosad. V. 189. 190 Matsumoto, Y. 78
Masek, 1.29,33 Matsumura, Y., see Wada, M. 122
AUTHOR INDEX 387
Mattausch, H.• see Simon. A. 227 Meyer. J.R., see Vurgaftman. I. 62

Manenberger, K.• see Kobler, U. 309 Michor, H. 223, 224, 274. 279, 287. 288
Mattheiss, L.F. 208, 227. 242. 247, 251. 253 Michor, H.• see El-Hagary, M. 232. 245. 253. 287
Matthias, B.T. 202. 205, 209, 213 Michor, H., see Gratz, E. 317
Matthias. B.T., see Fertig, W.A. 205 Michor, H., see Hilscher. G. 229
Mattis, D.C., see Methfessel, S. 4 Michor, H.• see Javorsky, P. 325-327
Mattson, J.E., see Park, Y.D.74 Michor, H., see Rotter. M. 310, 314
Maude, D.• see Sadowski, 1. 9 Michor, M.• see Divis, M. 242
Mauger, A.4 Michor, M., see Manalo. S. 236. 237
Mauri. D., see Dieny, B. 110. 163 Michurin, AV.. see Abramovich, AI. 178. 179
Mazin, 1.1., see Kortus, J. 244 Micklitz, H., see Baggio-Saitovitch, E.M. 223,
Mazumdar, c.. see Godart, C. 218 224,243
Mazumdar, c., see Tominez, E. 220. 242 Micklitz, H., see Sanchez. D.R. 256
Mazurndar, Ch. 229. 234, 235. 270 Mielke, C.H.• see Yatskar, A 272
Mazumdar, Ch., see Gupta. t.c, 216, 288 Mierzejewski, M., see Maska, M.M. 216. 217
Mazumdar, Ch.• see Hossain. Z. 219 Mihalisin, T.• see Jee, C.S. 323. 357
Mazumdar, Ch .• see Jacobs. T. 216 Mihalisin, T., see Lin, c.L. 318
Mazumdar. Ch .• see Nagarajan, R. 216, 225.242, Miiller. A.P.. see Taylor. R.E. 311
253,288 Milke. C.H., see Baxter, D.V. 32
McAlister. S.P. 323, 324 MiJlerJr.•1.H.• see Chu, R.K. 219
McCallum. R.W.• see Fertig, W.A. 205 Miller, L.L., see Cho. B.K. 242, 245. 249, 256,
McCombe, B.D., see Chen. X. 10 257,267
McConnack. M., see Jin, S. 175
Millis. AJ.• see Chattopadhyay, A. 60
McEwen. K.A. 320 Millis, A.J., see Ye,J. 27
McGrath, O.F.K.• see du Tremolet de
Min. B.I.• see Lee. J.1. 205
Lacheisserie, E. 105
Min, B.I.. see Park. 1.H. 44. 45
McIntyre, GJ.. see Campbell. A.J. 220. 242. 259.
Mineev, Y.P., see Barash. Y.S. 284. 285
267
Ming, Z.H.• see Krol, A. 17
McK Paul, D,. see Garcia-Landa, B. 182
Ming, Z.H .• see Soo, Y.L. 17
McKinstry. H.A., see Taylor. R.E. 311
Miotkowski, I.. see G16<I. P.49
McKinstry. ST.• see Taylor, R.E. 311
Miranovic, P. 222
McMahan, A.K.• see Mailhiot, C. 208
McMillan, W.L. 216. 217 Miranovic, P.• see Cheon, K.O. 227. 229
McMorrow, D.F., see Jehan, D.A. 159 Miranovic, P., see Kogan, V.G. 207, 273
Mean. B.J.• see Lee, K.H. 276, 288 Mishima, Y.• see Saito. H. 13
Medvedkin, G.A. 77 Mitarnura, H., see Oomi, G. 216
Meenakshi, S. 216. 217, 243 Mitani, S.• see Ohnuma, S. 173. 174. 189
Megges, K.• see Hartmann, Th. 10 Mitsumori, Y..see Oiwa, A. 73
Meiklejohn, W.H. 230. 231, 234, 241 Miura, N., see Hayashi. T. 176
Mencik, J.• see Quandt, E. 94, 141, 157 Miura, N.• see Matsuda. Y.H.37. 38
Meng, R.L., see Gao. L. 245, 269, 270 Miura. S.• see Ohashi. M. 329
Meng, R.L., see we, M.K. 208 Miyazaki, T. 117. 1I8. 122-124. 133, 136. 137
Menovsky, A.• see Mulders, A.M. 322, 357 Miyazaki. T.• see Ooike. T. 132, 133
Mergel. D. 96 Mizokawa, T. 44, 46
Merle d'Aubigne, Y., see Dietl, T. 47-49. 53, 54, Mizokawa, T., see Okabayashi, 1. 13.21.31,
74 44-46,50.55
Merle d' Aubigne, Y..see Haury. A. 5, 49, 54 Mizuguchi, M.• see Akinaga, H. 13
Merle d' Aubigne, Y.. see Kossacki, P. 49, 74 Mizuguchi, M.• see Okabayashi, J. 21. 79
Merlo, F. 326, 357 Mizuguchi, M., see Yamada. M. 13
Mesot, J.• see Gasser, U. 222, 241 Mizuhashi, K.• see Cava. R.J. 202. 205, 220, 223.
Methfessel, S. 4, 72 240.242
Methfessel, S.J. 72 Mizuhashi, K.. see Eisaki. H. 231, 240
Metlushko, V. 240 Mizuhashi, K.• see Murayama, C. 216
Metlushko, v., see de Wilde, Y. 266, 277 Mizuhashi, K.. see Takagi. H. 215. 230. 241
388 AUTHOR INDEX
Mochiku, T.. see Arisawa, S. 219 Mulders. A.M., see Yaouanc, A. 322
Medler, R.• see Steglich, F. 242 Muller, H.• see Gratz. E. 317
Molchan. P.. see Tomilo. Zh. 219. 220. 226 Muller, H.. see Rotter, M. 311. 344. 346-350, 356
Molchan. P.V.• see Tomilo, Zh.M. 205. 220. 224 Muller. J., see Ishikawa, M. 285
Molenkamp. L.W.• see Fiederling, R. 70 Muller. K.-H. 209. 216. 250. 256. 263
Molenkamp, L.W.. see Schott, G.M. 5. 7.16 Muller. K.-H., see Bitterlich, H. 210. 287. 288
Molins, E.• see Slawska-Waniewska. A. 170 Muller. K.-H.• see Drechsler. S.-L. 228. 229. 234
Moncton. D.E.• see Lynn. 1.W.211 Muller. K.-H.• see Eversmann, K. 216
Moncton. D.E.• see Thomlinson. W. 234 Muller. K.-H.• see Freudenberger, J. 219. 224.
Mondragon. 1.. see Bud·ko. S.L. 216. 217 225,233.234.236,237.241,266,279,280.
Mondragon. 1.. see EI Massalami, M. 242 284,287-289
Mcnemar, B.• see Linnarson, M. 19 Muller, K.-H.. see Fuchs. G. 209
Monthoux, P.• see Saxena. S.S. 209 Muller. K.-H.• see Kreyssig, A. 205. 221. 222. 262
Mook. H.A.• see Paul. D. McK. 272. 274 Muller. K.-H.• see Lipp, D. 226. 283
Moon. K.• see Lyu, P. 67 Muller, K.-H.. see Loewenhaupt, M. 273
Mooney. K.P.• see Chen. X. 10 Muller. K.-H.• see Lynn, J.w. 216
Mor, T.• see Vrijen, R. 79 Muller. K.-H.• see Narozhnyi, Y.N. 213. 236, 237,
Moreau. J.M.• see Roy. J.L. 342 248-252.271,276.288
Morellon, L. 309. 336-339. 356. 358 Muller, K.-H.• see Shulga, S.V. 233. 241, 281
Morhange, 1.-F.. see Szuszkiewicz, W. 66 Muller. K.-H.• see Sierks, C. 275
Mori. N.• see Murayama, C. 216 MUller. K.A.• see Bednorz, J.G. 207
Mori. N.• see Uehara. M. 216. 217. 264 Muller, M.• see Schmidt, H. 263
Morin.~94.256.310.312.319
Muller-Hartman. E. 219, 221. 255
Morin. P.• see Gignoux, D. 329. 330. 356 Mun, M.O. 216. 217. 230
Morin. P.• see Rouchy, J. 319, 358
Munekara, H.• see Soo, YL. 12. 13
Morita, H.• see Fujimori, H. 120
Munekata, H. 5. 6.10-12,17.36.57.58
Moriya, R. 12
Munekata, H.• see Endo, T. 10
Moriya, R.. see Oiwa, A. 73
Munekata, H.• see Fumagalli, P. 36. 40
Moriya, T. 211. 213.288
Munekata, H.• see Guha, S. 10
Morosov, A.I. 242. 269
Munekata, H.• see Haneda, S. 5. 12. 16
Morotomo, Y. see Kuwahara. H. 178
Munekata, H.• see Hirakawa. K. 37
Morozov, A.I. 288
Munekata, H.• see Koshihara, S. 72
Mortensen. K., see Eskildsen. M.R. 265. 267. 269.
Munekata, H.• see Krol, A. 17
273-276
Munekata, H.• see Kuwahara, S. 13. 14
Mortensen. K.• see Gammel, P.L. 223. 267. 277.
279 Munekata, H.• see Matsuda, Y.H.38
Mortensen, K.• see Yaron. U. 242. 248. 249. 251. Munekata, H.. see Moriya, R. 12
Munekata, H.. see Ohno, H. 5. 10. 11.32.34,35
270.271
Mostoller. M., see Paul, D. McK. 272, 274 Munekata, H., see Oiwa, A. 22, 36. 73
Motokawa, M.• see Akiba, N. 65. 68 Munekata, H.. see Slupinski, T. 10. 36
Motokawa, M.• see Nagai. Y 37. 49 Munekata, H., see Soo, Y.L. 17
Motokawa, M.• see Nojiri, H. 19 Munekata, H.• see Szczytko, 1. 19
Motokawa, M.• see Omiya, T. 30-33. 47. 55 Munekata, H.• see von Molnar, S. 34
Motome, Y.• see Nakano. H. 175 Munekata, H.• see Yanagi, S. 66
Movshovich, R. 265. 266 Murakami. M.• see Matsumoto. Y.78
Mryasov, O.N.• see van Schlifgaarde, M. 29. 44 Murakami. T.. see Luke, G.M. 212
Much. G., see Hansen, P. 115.117 Muranaka, T.• see Nagamatsu, J. 202. 203
Mueller. R.M.• see KObler. U. 309, 315 Murayama, C. 216
Mukhin, A.A. 181 Murday, 1.S.. see Wandass, J.H. 106
Mukhin. A.A.• see Kadomtseva, A.M. 180 Murdoch.J.205.207
Mukin. A.A.• see Popov. Yu. E 179. 180 Murillo. N.• see Zuberek, R. 173
Mulder. EM. 269 Murphy. C.B.• see Pinkerton, EE. 168. 173
Mulders. A.M. 275. 322. 357 Murphy. D.W., see Rosseinsky, MJ. 209
Mulders, A.M., see Gasser, U. 245 Muto, T.• see Ueda, S. 44
AUTHORINDEX 389
Mydlarz, T.• see Jarosz. J. 326. 327. 357 Narita, K. 108

MydIarz. T.• see Stalinski, B. 318. 357 Narozhnyi, V.N. 213. 235-238. 248-252. 271.
Mydosh. J.A.. see Davidov,D. 216 276.288
Mydosh. lA.. see HUser. D. 244 Narozhnyi, V.N., see Drechsler. S.-L. 234
Mydosh, J.A.• see Nieuwenhuys, GJ. 231. 280. Narozhnyi, V.N.• see Freudenberger, l 289
283.284 Narozhnyi, V.N.• see Fuchs. G. 209
Myzenkova, L.P.. see Savitskii, E.M. 214 Narozhnyi, V.N.• see Lynn. J.W. 216
Narozhnyi, V.N., see MUlier. K.-H. 209. 216. 263
Nass, MJ. 258
Nabarro, F.R.N.• see Frolich, H. 48
Nass, MJ.• see Levin. K. 235
Naber. L.• see Michor, H. 223. 224. 279
Naugle, D.G. 216. 240. 266
Nabialek, A.• see Troyanchuk, 1.0. 184
Naugle, D.G., see Du Mar. A.C. 212
Nabialek, A.. see Zuberek, R. III. 156
Naugle. D.G.• see Eskildsen, M.R. 269
Nagai. Y. 37.49 Naugle. D.G.• see Hennings, B.D. 260
Nagamatsu, J. 202. 203 Naugle. D.G.• see Rathnayaka, K.D.D. 227, 230.
Nagarniya,T. 318 234.235.271.278
Nagarajan, R. 216. 225, 242. 253, 269. 285. 288 Navaro, 0., see Le Gall, H. III
Nagarajan. R., see Alieno. E. 242, 246 Ndjaka, J.M.• see Dieny, B. 163
Nagarajan. R.. see Bonville. P. 213. 270 Neagu, M.• see Chiriaco H. 168. 169
Nagarajan, R.• see Chinchure, A.D. 220. 242, 249. Neagu, M.• see Hristoforou, E. 106
258 Neel, L. 105
Nagarajan, R.• see Dhar, S.K. 227, 240-242, 251 Nemeth. S.. see Akinaga, H. 14
Nagarajan, R.• see Ghosh. G. 230 Nemeth. S.• see Ofuchi, H. 14
Nagarajan, R.• see Godart. C. 218. 220, 242. 260 Nenkov, K.• see Behr,G. 225
Nagarajan, R., see Gupta, L.C. 216, 288 Nenkov, K.• see Bitterlich, H. 210. 287. 288
Nagarajan, R., see Hossain. Z. 205, 219. 220. 223. Nenkov, K.• see Drechsler. S.-L. 228. 229
242.248-250.253.271,288 Nenkov, K.. see Freudenberger.J. 219. 224. 225.
Nagarajan, R.• see Jacobs. T. 216 236.237.266.279.287.288
Nagarajan, R.• see Lynn. J.w. 213. 220. 289. 335 Nenkov, K.. see Fuchs. G. 209
Nagarajan, R.• see Mazumdar, Ch. 234. 235. 270 Nenkov, K.• see Lipp, D. 226. 283
Nagarajan, R.• see Meenakshi, S. 216. 217, 243 Nenkov, K.• see MUlier. K.-H. 209. 216
Nagarajan, R.• see Rams. M. 221 Nenkov, K.• see Narozhnyi, V.N. 248-252. 276.
Nagarajan, R.• see Sanchez, lP. 219, 220, 224. 225 288
Nagarajan, R.• see Sinha. S.K. 213 Nenkov, K.A.. see Freudenberger; J. 289
Nagarajan. v.; see Paulose, P.L. 340 Nenkov, K.A.• see Narozhnyi, V.N.213. 236. 237.
Nagasaka, K.• see Nagai. Y. 37.49 248.251.252.271
Nagashima, A.• see Hazama, Y. 79 Neumann. K.U.• see Parsons. MJ. 318, 357
Nagashima, A.• see Okazawa, 0.13 Neumann. K.U.• see Taylor.J.W. 318. 357
Nagashima, A.• see Tazima, M. 7. 9 Neumann, M., see Talik. E. 352. 356
Nagata, T.• see Uehara. M. 216, 217. 264 Neumeier. U .. see AlIeno, E. 216. 217
Nagi, Y. 151 Ng, T.K. 210
Nakagawa. N.. see Nagamatsu, J. 202. 203 Nguyen. L., see oeu G. 230
Nakai. N. 236 Niarchos, D.• see Speliotis, A. 119
Nakajima. M., see Kanamura, M. 73 Nickel. B.G.• see Fisher. M.E. 61
Nakajima, Y.•.fee Izawa, K. 260 Niedermayer, Ch., see Bernhard. C. 213
Nakamura. K.• see Arisawa, S. 219 Niedermayer, Ch.• see Henn, R.W. 238
Nakamura, K.• see Okabayashi, J, 21 Nieuwenhuys. GJ. 231. 280. 283, 284
Nakano. H. 175 Nieuwenhuys. GJ.• see Davidov, D. 216
Nakano. Y.,see Shimizu. H. 41 Nieuwenhuys, G.J.• see EI Massalami. M. 219.
Nakata. K., see Akiba, N. 65 220,223.242.247
Nakayama. H.• see Kulatov, E. 43 Nieuwenhuys, GJ.• see HUser. D. 244
Nakazoe, S.• see Okabayashi, J. 21 Nieuwenhuys, GJ.• see Le, L.P. 235
Nakotte. H.• see Brabers, J.H.VJ. 272 Nieuwenhuys, GJ.• see Saba, N. 225
Nan. C.-W. 173 Nigam. A.K.• see Mazumdar, Ch. 270
390 AVTHORINDEX
Nigh, H.E. 320 Ohki, A., see Shibata, N. 5

Nikitin, SA, see Belov, K.P. 126 Ohldag, H. 20,44, 45, 50
Nikitin, S.A., see Bodriakov, V.Y. 321 Ohno, H. 5, 9-11,15-17,22.24-26,28,32,34,
Nishi, T., see Medvedkin, G.A. 77 35,54,55,57,58,68,69,74,78
Nishida, N., see Sakata, H. 271 Ohno, H., see Abe, E. 14, 15,71
Nishihara, Y., see Zou, Z. 211, 213, 288 Ohno, H., see Akiba, N. 65, 68, 69
Nishikawa, N., see Satoh, Y. 9, 24 0000, H., see Ando, M. 38
Nishikawa, Y.5 Ohno, H., see Arata, I. 47, 63
Nishinaga, T., see Hayashi, T. 5, 62, 63 Ohno, H., see Beschoten, B. 41, 47
Nishinaga, T., see Shimizu, H. 7,16,34,55 Ohno, H., see Chiba, D. 65, 66
Nishizawa, K., see Sakai, O. 37, 61 Ohno, H., see Dietl, T. 23,25,29,40,41,47,
Niu, Q., see Jungwirth, T. 27 49-58,73-75,77
Noakes, D.R., see Bernhard, C. 213 Ohno, H., see Fukumura, T. 26
Noda, K., see Hayashi, T. 176 Ohno, H., see Guo, S.P. 7, 10
Noel, H., see Godart, C. 218 Ohno, H., see Harris, J.G.E. 26
Noh, T.H., see Lim, S.H. 132, 133 0000. H., see Katsumoto, S. 31,49
Nohara, M. 268, 269, 279, 283-285 Ohno, H., see Kuroiwa, T. 38, 39
Nohara, M., see Izawa, K. 260 0000, H., see Matsuda, Y.H. 37, 38
Nohara, Mo, see Takagi, H. 231 Ohno, H., see Matsukura, F. 7, 21, 29, 30,48-50,
Nohara, M, see Yokoya, T. 243 55,56,63
Nojiri, H. 19 Ohno, H., see Munekata, H. 5, 6, 10, 17
Nojiri, H., see Nagai, Y. 37,49 Ohno, H., see Nagai, Y. 37.49
Nokura, K., see Machida, K. 206, 211, 266 0000, H., see Nojiri, H. 19
Nold, E., see Quandt, E. 94,141, 157 Ohno, H., see Ofuchi, H. 17
Nonoyama, S. 70 Ohno, H., see Ohldag, H. 20, 44, 45, 50
Nonoyama, S., see Inoue, J. 48, 70 0000, H., see Ohno, Y.63, 64, 70, 71, 73
Nordblad, P., see Mathieu, R. 175 0000, H., see Oiwa, A. 20-23, 31, 36, 49, 50, 55
Ohno, H., see Omiya, T. 10,30-33,47,55
Nergaard, K. 225
Novak, M.A., see El Massalami, M. 205, 206 Ohno, H., see Salis, G. 79
Ohno, H., see Shen, A. 7-9, II, 15, 16,25,36,54,
Novikov, D.L., see Shick, A.B. 105
Novo, J.M., see Hernando, A. 309
57,58,61,62
Ohno, H., see Shono, T. 26, 58, 59
Novosad, V. 189, 190
Ohno, H., see Sugawara, Y. 32
Nowak, W.B., see Bushnell, S.E. III
Ohno, H_, see Szczytko, J. 38, 40, 41, 47, 50
Nowicki, P.,see Slawska-Waniewska, A. 169-171
Ohno, H., see Takamura, K. 7
Nys, J.P., see Grandidier, B. 18
Ohno, H., see Tsuruoka, T. 18
0000, H., see Veda, S. 44
O'Bryan, H.M., see Jin, S. 175 Ohno, H., see von Molnar, S. 34
Obukhov, S.A. 15 Ohno, H., see Yang, J. 9
Obukhov, S.A., see Henriques, A.B. 15 Ohno, H., see Yasuda, H. 7
O'Donovan, K.V. 159 Ohno, H., see Zhao, J.H. 10
Oesterholt, R., see de Boeck, J. 5, 9 Ohno, Y. 63, 64, 70, 71, 73
Oesterreicher, H. 328 Ohno, Y., see Abe, E. 14, 15,71
Ofuchi, H. 14, 17 Ohno, Y., see Akiba, N. 65, 68, 69
Ofuchi, H., see Akinaga, H. 14 Ohno, Y., see Arata, I. 47, 63
Ogawa, T. 17,42,43 Ohno, Y., see Chiba, D. 65, 66
Ogawa, To, see Shirai, M. 17,41 Ohno, Y., see Guo, S.P. 7.10
Oguchi, T., see Yokoya, T. 243 Ohno, Y., see Kuroiwa, T. 38, 39
Oguchi, T., see Zhao, Y.-J. 78 0000, Y., see Matsukura, F. 7. 63
O'Handley, R.C. 105, 109 Ohno, Y., see Ohno, H. 68, 69, 74
O'Handley, R.C., see Bochi, G. 113 Ohno, Y., see Omiya, T. 10,30-33,47,55
O'Handley, R.C., see Sun, S.w. 112, 152 Ohno, Y., see Salis, G. 79
Ohashi, M. 329 0000. Y.• see Shen, A. 54, 58, 61, 62
Ohashi, M., see Yamauchi, H. 231 Ohno, Y., see Takamura, K. 7
AUTHOR INDEX 391
Ohno, Y., see Yang. J. 9 Oosawa, M.• see Sakata, H. 271

Ohno, Y.• see Zhao. J.H. 10 Opahle, I., see Drechsler. S.-L. 216, 228. 229
Ohnuma, S. 173. 174. 189 Opahle, I.. see Rosner. H. 205. 206. 228-230. 233.
Ohoyama, K., see Yamauchi, H. 231 235
Ohsawa, A., see Novosad. V. 189, 190 Ordejon, P.• see Sanvito, S. 42, 43. 46
Ohta, H.• see Kulatov, E. 43 Orsier, E. 188
Ohta. S. 350, 351, 356 Ortelli, J.• see Peter, M. 214
Ohtani, K., see Akiba, N. 65. 68, 69 Osaka. T. 185
Ohtani, K.• see Ohno, H. 68. 69. 74 Osborn. R.• see Abell, J.S. 316
Ohtani, K.• see Ohno, Y. 63, 73 Oscarsson, H.• see Sadowski. 1. 5
Ohtsuka, Y..see Hayashi, T. 5 Oshima. M., see Akinaga, H. 14
Ohya, E. 10 Oshima. M., see Ofuchi, H. 14
Oiwa, A. 20-23. 31. 36,49,50.55,73 Oshima. M., see Okabayashi.T, 21, 79
Oiwa, A.• see Akiba, N. 65. 68 Oshima, M., see Yamada. M. 13
Oiwa, A.. see Endo, T. 10 Osinniy, V. 33
Oiwa, A., see Hirakawa. K. 37 Ossau•.W.• see Fiederling, R. 70
Oiwa, A.• see Katsumoto, S. 31, 49 Ostenson, lE., see Vinnikov, L. Ya. 260. 264
Oiwa, A.• see Koshihara, S. 72 Ostenson, J.E., see Xu. M. 225
Oiwa, A.• see Moriya, R. 12 Otani. Y., see Novosad, V. 189. 190
Oiwa, A.• see Munekata, H. 36 Ott. F., see Szuszkiewicz, W. 66
Oiwa, A.• see Ohno, H. 5,15-17,22.25.26.54. Ovari, T.-A., see Chiriaco H. 169. 185
55,57,58 Ovchinnikov, Yu.N.• see Larkin. A.I. 227. 228
Oiwa, A.• see Shen, A. 7-9. 11.25.36.54.57.58 Overberg, M.E. 13
Oiwa, A.• see Slupinski, T. 10. 36 Overberg, M.E., see Theodoropolpu, N. 14
Oiwa, A., see Yanagi, S. 66 Owa, S.• see Soo, Y.L. 13
Oka, K., see Zou, Z. 211. 213,288 Oxx, S., see Eskildsen. M.R. 269. 276
Okabayashi, J. 13,21. 3 1 . ~ . 50, 55. 79
Okabayashi. J.• see Yamada, M. 13
Okada. M.• see Kikuchi. S. 132, 133 Paalanen, M.A. 49
Okada. M.• see Tanaka, T. 132 Paccard, D.• see Roy. lL. 342
Okazawa, D. 13 Pacheco. r.v 327
Okazawa, D., see Tazima,M. 7. 9 Pacheco, V.• see Gratz. E. 317
Okumura. S.• see Kanamura, M. 73 Padalia, B.D., see Godart. C. 218
Oles. A.M., see Feiner. L.F. 175 Padalia, B.D .. see Gupta, L.C. 216. 288
Oliveira, I.S., see de Jesus. V.L.B. 340 Padalia, B.D., see Hossain. Z. 219
Oliveira, N.F.Yr.• see Henriques, A.B. 15 Padalia, B.D., see Mazumdar, Ch. 234. 235. 270
Oliver. S.A., see Bushnell. S.E. III Padalia, B.D .• see Nagarajan. R. 216. 225. 242.
Olsen. C.E., see Willis. J.O. 258 253
Omiya, T. 10,30-33,47,55 Pagola, S.• see Dertinger, A. 216. 217. 264. 266
Omiya, T., see Matsukura, F. 7. 63 Palczewska, M., see Szczytko, J. 19
Omiya, T.• see Ohno, H. 74 Palczewska, M .• see Zaj~. M. 13
Ong, N.P., see He, T. 284. 285 Palenzona, A. 323
Onimaru, T., see Yamauchi. H. 231 Palenzona, A., see Cimberle, M.R. 227
Ono, K.• see Okabayashi, J. 21. 79 Palomba, F.• see Andreone, A. 241
000. K.• see Yamada, M. 13 Palstra, T.T.M .• see Rosseinsky, MJ. 209
Onodera, H. 216. 217 Pattiel, Y., see Dewhurst, C.D. 202, 205. 220. 267.
Onodera, H.• see Yamauchi, H. 231 277
Onuki, Y.• see Koyanagi, A. 346 Paltiel, Y.. see James, S.S. 267
Onuki, Y., see Shimizu, K. 231 Panfilov, A.S., see Grechnev, G.E. 318
Ooike, T. 132. 133 Panjukov, S. V.• see Bulaevskii, L.N. 226
Oomi, G. 216. 217 Paranthaman, M. 212
Oomi, G., see Eto. T. 181 Parasiris, A., see Rathnayaka, K.D.D. 271
Oomi, G., see Matsuda, N. 210 Park. J.H. 44. 45
Oomi, G.• see Uwatoko, Y. 273 Park. K.T., see Zhao, Y.-J. 42, 44
392 AUTHOR INDEX
Park. Y.D.74 Peck Jr., W.F., see Zandbergen, H.W 219, 220,
Park. Y.D.• see Jonker. J.T. 70 242.266
Park. Y.W., see Choi, C.K. 262 Pengo Z., see Winzer, K. 234
Parker, C.A.• see Reed. M.L. 14.77 Pengo Z.Q. 209
Parker. E., see Fink. HJ. 205. 208. 211 Penny. T., see Munekata, H. II. 36
Parkin. S.S.P.• see Dieny, B. 110, 163 Penny. T.• see Ohno, H. 5, II. 32. 34. 35
Parmenter. R.H. 44 Pepic, N.I.. see Obukhov, SA 15
Parsons, MJ. 318. 357 Peralta, L.• see Wahl, U. 14
Parthe, E.• see Roy. J.L. 342 Pereheron-Guegan, A.• see Latroche, M. 317
Paschen. S.• see Hase, K. 205 Perez de Albeniz, I.. see Holzer. D. 168
Pashitskii, E.A. 48 Pernod, see Le Gall. H. 143. 147, 148
Pasquale. M. 119 Peschel, I.. see Fulde, P. 210, 287
Passel. L.. see Lynn. J.W. 211 Pescia, D., see Back. C.H. 174
Paszkowicz, W.• see Zuberek, R. III. 156. 157. Peter. M. 214
170 Peterson. E.1., see Nagarajan, R. 288
Patil, S.• see Paulose, P.L. 340 Petroff, F., see Barthelemy. A. 93
Pattalwar, S.M.• see Hossain. Z. 223, 248-250 Petrou, A., see Jonker. J.T. 70
Paufler, P., see Belger, A. 335 Penit. K., see Beach. R.S. 159
Paufler, P.• see Jaenike-Roessler, U. 277 Petukhov, A.G. 70
Pautler; P.• see Just. G. 262 Peuzin, J.C., see du Tremolet de Lacheisserie, E.
Paul. D. MeK. 258, 269. 272. 274, 276 106. 108, 186
Peuzin, J.C.• see Halstrup, B. 187
Paul. D.MeK.• see Campbell, A.1. 220. 242, 259.
267 Peuzin, J.C.• see Orsier, E. 188
Paul, D.MeK.• see Chang. L.J. 241. 242, 275. 278 Pfleiderer,C. 226. 237
Phillips, N.E.• see Wright. DA 207
Paul, D.MeK.• see Dewhurst, C.D. 202, 205. 220.
Picket, W.E.• see Kogan. V.G.273
267.277
Picken. W.E. 242. 253
Paul, D.MeK., see James. S.S. 267
Pickett. W.E.• see Ann. J.M. 207
Paul. D.MeK., see Rybaltchenko, L.F. 267. 277
Piercy. A.R.. see Wang, B.W 94
Paul, D.MeK.• see Saha, N. 225
Pirnenov, A., see Mukhin, A.A. 181
Paul. D.MeK.• see Silhanek, A.V. 205
Pinkerton, F.E. 168, 173
Paul. D.MeK.• see Song. K.I. 221. 256
Pinkerton, F.E.. see Herbst, J.C.M. 168. 173
Paul, D.MeK.• see Tomy.C.V. 206. 256. 258, 259
Pinkpank, M.• see Mulders. A.M. 322, 357
Paul. D.MeK.. see Yanson,I.K. 276
Pitschke, W.• see Buchgeister, M. 221
Paul. D.MeK., see Yethiraj. M. 272. 279 Planel, R.• see Gaj, J.A. 36. 51
Paul-Boncour, V., see Gratz, E. 317 Plesiewicz, W.. see Wojtowicz, T. 32
Paul-Boncour, V.• see Latroche, M. 317 Plynn, C.P., see Beach. R.S. 159
Paulose, P.L. 340 Podsiadlo, S.• see Gebicki, W. 13
Paulsen. C.• see Aoki, D. 214 Podsiadlo, S.• see Zajac, M. 13
Pearton, S.1., see Overberg, M.E. 13 Pokrovsky, Y.L., see Canfield, P.C. 215
Pearton, S.1., see Theodoropolpu, N. 14 Pokrovsky, V.L.. see Kalatsky, VA 242. 266
Pecharsky. V.K.336--338 Poldy. C.A. 351. 356
Pecharsky, V.K.. see Dan'kov, S.Y. 320 Poldy, C.A.• see Gratz. E. 351
Pecharsky, V.K., see Levin, E.M. 336 Polk.D.E.120
Pechev, S.• see Bobet, J.-L. 322 Popov. Yu. F. 179. 180
Peck Jr.• W.F., see Carter. SA 202, 205. 224 Popov. Yu.F., see Kadomtseva, A.M. 180
Peck Jr.• W.F., see Cava, R.I. 202. 205. 220. 223. Potashnik, S.1. 5. 9, 34. 50. 56. 77
240.242.283 Potel, M.• see Godart. C. 218
Peck Jr., W.F.. see Eisaki, H. 231, 240 Poteshnik, S.1., see Chen. X. 10
Peck Jr., W.F., see Grigereit, T.E. 205 Pototschnig. P., see Gratz, E. 325
Peck Jr., WF., see Lynn. J.W 213, 215. 249. 252 Pourarian, F. 316
Peck Jr.• W.F.. see Siegrist. T. 218. 246. 247. 251. Pevzner, A.A.• see Bodriakov, V.Y. 321
253,270.335 Power, A.L.. see Gibbs. M.R.J. 94. 188
Peck Jr.• W.F.. see Takagi. H. 215, 230. 241 Prado, F.• see Alejandro. G. 175
AUTHOR INDEX 393
Prados, c., see Hernando. A. 108. 117 Rathnayaka, K.D.D., see Eskildsen. M.R. 269
Prados, C.• see Huang. J. 96. 109. 117 Rathnayaka, K.D.D.• see Hennings. B.D. 260
Prados, C; see Stobiecki, T. 109 Rathnayaka, K.D.D., see Naugle, D.G. 216, 240,
Prasad. A.• see Luysberg, M. 7. 33 266
Prassides, K. 231. 240 Raveau, B., see Maignan, A. 179
Pratt. EL.. see Nagarajan. R. 288 Raveau, B.• see Respaud, M. 179
Prejean. J.J.• see WUchner. S. 141. 163 Ravindran, P. 229
Preobrazhensky, V.• see Le Gall. H. 143. 147. 148 Ravindran, P.. see Meenakshi, S. 243
Price. G.L. 15 Ravot, D. 324, 357
Prida, V.M.• see Tejedor, M. 168 Razavi, ES .• see Murdoch. J. 205. 207
Prieto. C.• see Hernando. A. 108. 117 Rebizant, J••see Kobler, U. 309, 315
Prinz, G.A. 4 Rebouillat, J.P., see Chappert, J. 116
Proust. c.. see Boaknin, E. 279 Rebouillat, J.P., see Coey, J.M.D. 126
Prozorov, R. 284 Reed. MJ.• see Reed. M.L. 14,77
Prytkova, N.A.• see Tomilo, Zh.M. 205. 219. 220, Reed, M.L. 14.77
224.226 Regan. K.A.• see He. T. 284, 285
Pshechenkova, G.V.• see Belov, K.P. 126 Reich, S.• see Feiner. I. 241, 255
Pugh. E.• see Saxena, S.S. 209 Reif, T.• see Svoboda. P. 345
Purushotham, D.S.C.• see Hossain. Z. 242. 248, Reimer. V.A.. see Borombaev, M.K. 346. 348. 349
253 Rempel. A.A.• see Gusev, A.I. 219
Putti, M.• see Cimberle, M.R. 227 Reninger, T.. see Hofmann. B. 136
Respaud, M. 179
Ressouche, E.• see Aoki, D. 214
Qiu, X.D.• see Gao. L. 245. 269, 270
Ressouche, E.• see Huxley. A. 211
Quandt. E. 94.103.117-119.122.133.141.142.
Reuscher, G.• see Fiederling, R. 70
144. 149. ISO. 157. 158. 166. 188. 189
Reuter. D., see Sander, D. 106
Quandt. E.• see Ludwig. A. 129. 143, 145-147.
Rewiersma, M.J.F.M.• see HUser. D. 244
149. 154. 185 Rhades, W.w.. see Jin, S. 175
Quirion. G.• see Murdoch. J. 205. 207
Rhee. J.Y. 209
Rhee, J.Y.• see Song. C. 221. 256
Rader. 0 .. see Okabayashi, J. 21,31.44-46.50.55 Rhee, J.Y.• see Suh, BJ. 214
Radha, S.• see Mazumdar, Ch. 270 Rhyne, J.J. 93
Radwanski, R.I., see Franse, U.M. 122.322.357 Rhyne. J.J.• see Beach. R.S. 159
Rainford, B.D.• see Abell, J.S. 316 Rhyne. J.J., see Borchers, J.A. 159
Raj. P.• see Hossain. Z. 242, 248. 253 Rhyne. J.J.• see Erwin. R.W. 159
Rakhmanina, A.V.• see Makarova, T.L. 286 Riabinin, Yu.N., see Shubnikov, L.V. 228. 232,
Rakoto, H.• see Respaud, M. 179 233.240.241
Ramirez. A.P. 175.271 Rialland, J.F., see Alves. F. 172
Ramirez. A.P.• see Eskildsen. M.R. 267. 269. 275. Riblet. G. 203
276 Rice. T.M.• see Fehrenbacher. R. 219. 221
Ramirez. A.P.• see Gammel, P.L. 273 Rice. T.M.• see Zhang. F.C. 42. 60
Ramirez, A.P.• see He. T. 284, 285 Richardson. C.F. 279
Ramirez. A.P.• see Rosseinsky, MJ. 209 Richornme, E, see Due. N.H. 94, 133
Ramirez. A.P., see Varon. U. 242. 248. 249. 251. Richter. M.• see MUller. K.-H. 216
270,271 Rieder. K.H.• see Weber. M. 106
Rams. M. 221 Riedi, K. 118. 133, 135. 136
Ramsperger, U.• see Weber, W. 114 Riedi. P.C.93
Rao. C.N.R., see Edwards. P.P. 48 Riedi, P.c.. see de Jesus. V.L.B. 340
Rao, K.V., see Strom, V.205 Riseman, T.M.• see Luke. G.M. 212
Rao, R.S.• see Meenakshi, S. 216, 217. 243 Ritter. C.• see Chang, L.J. 241, 275. 278
Rapp, R.E. 261 Ritter. C.• see de Teresa. J.M. 178
Rapp, R.E., see EI Massalami, M. 223 Ritter, C.• see Freudenberger, J. 219. 224. 225
Radunayak~K.D.D.227,230,234,235,271.278 Ritter, C; see Garcfa-Landa, B. 176, 177
Rathnayaka, K.D.D.• see Du Mar. A.C. 212 Ritter. c., see Kreyssig, A. 205. 221, 222. 262
394 AUTHOR INDEX
Ritter, C., see Loewenhaupt, M. 273 Russel, V. 260

Ritter, C., see MUlier, K-H. 250, 256 Russo, M.L., see Andreone, A. 215
Ritums, M.K., see Reed, M.L. 14,77 Ruzmetov, D., see Baxter, D.V. 32
Ro, C., see Levin, K. 235 Ryabchenko, S.M., see Pashitskii, E.A. 48
Roberts, J.C., see Reed, M.L. 14,77 Ryba, E., see Debray, OK 350, 356
Rodrigues Bitterncourt, A.C. 69 Rybaltchenko, L.F. 267, 277
Rodriguez, C.O., see Cappannini, O.M. 229, 232
Rodriguez, C.O., see Weh!, R. 206
Sadowski, J. 5,9, 10, 15, 16,26,40,62,77
Rodriguez-Carvajal, J., see Blanco, J.A. 339-341,
Sadowski, J., see Fedorych, O.M. 19,58
356,357
Sadowski, J., see Kepa, H. 66
Rodrfguez-Femandez, J., see Blanco, J.A.
Sadowski, J., see Osinniy, V. 33
339-341,356,357
Sadowski, J., see Szuszkiewicz, W. 66
Rodnguez-Pemandez, J., see Espeso, J.1.
Saeki, H. 9, 24, 78
340-342,357
Safaraliyev, G.I., see Aliyev, M.1. 5, 14
Rogado, N., see He, T. 284, 285
Saba, N. 225
Rogl, P.282
Saba, N., see Dewhurst, C.D. 202, 205, 220
Rogl, P., see Michor, H. 223, 279, 288
Saito, H. 13
Rogl, P., see Rupp, B. 207
Saito, T., see Miyazaki, T. 117, 118, 122-124,
Roig, A., see Slawska-Waniewska, A. 170
133, 136, 137
Roisnel, T., see Ravot, D. 324, 357
Saitoh, Y., see Ueda, S. 44
Rojo, J.M., see Fontcuberta, J. 309
Sakai, F., see Nohara, M. 268, 269
Rojo, J.M., see Hernando, A. 309
Sakai, O. 37,61
Rosenkranz, M., see Hansen, P. 115, 117
Sakai, T. 205, 273, 274
Rosenkranz, S., see Gasser, U. 241
Sakata, H. 271
Rosne~H.205,206,228-230,233,235
Rosner, H., see Drechsler, S.-L. 216, 228, 229, 234 Sakon, T.. see Akiba, N. 65, 68
Rosner, H., see Fuchs, G. 209 Sakon, T., see Omiya, T. 30-33,47,55
Rosner, H., see von Lips, H. 260-262 Sakurai, Y., see Konishi, S. 108
Rosov, N., see Skanthakumar, S. 241, 242, 245, Sala, R. 243
252,268 Salamati, H., see Murdoch, J. 205, 207
Ross, K, see Dezaneti, L.M. 242, 249, 251, 270, Salamon, M.B., see Beach, R.S. 159
271 Salamon, M.B., see Borchers, 1.A. 159
Rosseinsky, M.J. 209 Salamon, M.B., see Erwin, RW. 159
Roth,S.244,245,270 Salamon, M.B., see O'Donovan, KV. 159
Rothrock, B.D., see Taylor, R.E. 311 Sales, B.C., see Paul, D. McK. 272, 274
Rotter, M. 223, 310, 311, 314, 344, 346-350, 356 Salis, G. 79
Rotter, M., see Doerr, M. 335 Salis, G., see Kawakami, R.K. 75
Rotter, M., see Gratz, E. 317 Samarth, N., see Malajovich, I. 79
Rotter, M., see Lindbaum, A. 345 Samarth, N., see Potashnik, S.l. 5, 9, 34, 50, 56,77
Rotter, M., see Svoboda, P. 345 Saminadayer, K., see Baron, T. 5
Rouchy, J. 319, 358 Sampathkumaran, E., see MaIlik, R. 310
Roudaut, E., see Castets, A. 343, 356 Sampathkumaran, E., see Paulose, P.L. 340
Roukes, M.L., see Wolf, S. 4 Sampathkumaran, E.V., see Eto, T. 181
Roy, J.L. 342 Samsonenko, N.V., see Troyanchuk, 1.0. 184
Roychowdhury, V., see Vrijen, R 79 Sanchez, D.R. 226, 256, 266
Ruf, R.R, see Munekata, H. 10 Sanchez, D.R., see Baggio-Saitovitch, E.M. 223,
Ruf, T., see Heimbrodt, W. 10 224,243
Ruf, T., see Sapega, V.F. 20, 47 Sanchez, D.R., see Bourdarot, F. 218
Ruffino, G., see Taylor, R.E. 311 Sanchez, D.R., see Fontes, M.B. 213
Rukang, L. 221 Sanchez, 1.P. 219, 220, 224, 225
Rupp, B. 207 Sanchez, J.P., see Godart, C. 220, 242, 260
Rupp Jr., L.W., see Cava, R.I. 202, 223 Sanchez, J.P., see Hodges, J.A. 278
Rupp Jr., L.W., see Ilegems, M. 19 Sanchez, J.P., see Tomala, K. 219, 335,357
Rusinov, A.I., see Gor'kov, L.P. 220, 242, 260 Sanchez, M.L., see Tejedor, M. 168
AUTHOR INDEX 395
Sanchez, R., see Alejandro, G. 175 Schmidt. L.. see Brison. J.P. 220. 283
Sande~D.95, 105-107, 113 Schmidt, M., see Schairer. W. 20
Sander, D., see Gutjahr-Loser, Th. 104, 114 Schmidthals, C., see Sander, D. 106
Sanina, V.A.• see Henriques. A.B. 15 Schmiedeshoff, G.M. 205, 206, 230
Santi, G.. see Dugdale. S.B. 230, 240 Schmiedeshoff, G.M.• see Christianson, A.D. 236
Santoro. A.. see Grigereit, T.E. 205 Schmiedeshoff, G.M., see Lacerda, A. 205, 217,
Santoro, A.• see Lynn. J.w. 213. 215. 249, 252 220. 251, 289
Santos. A.D.. see Givord, D. 141, 163 Schmitt, D.. see Blanco, I.A. 310. 339-341, 356,
Sanvito, S. 42-44. 46 357
Sapega, V.F. 20, 47 Schmitt, D.• see Bouvier, M. 310
Sapega, V.F.. see Heimbrodt, W. 10 Schmitt, D.• see Feiner. I. 213. 216
Sarkoz], Z.. see Due. N.H. 124-126 Schmitt, D., see Gignoux, D. 329. 330. 356
Sarrac, J.L.. see Zandbergen, H.W. 223 Schmitt. D.• see Morin, P. 94, 256, 310. 312, 319
Sarrao, J.L. 205 Schneider, J. 19
Sarthour, R.. see de la Fuente. C. 162 Schneider. M.• see Lipp, D. 226. 283
Sasaki. T., see Sonoda, S. 14.77 Schneidewind, A.• see Kreyssig, A. 205
Sasaki. Y., see Baxter, D.V. 32 Schneidewind. A.• see Lindbaum, A. 345
Sasaki. Y.,see Chen, X. 10 Schneidewind. A., see Rotter, M. 310. 346, 356
Sasaki. Y.• see Liu, X. 5. 26 Schneidner, I .• see Kraus, L. III
Sassik, H.• see Holzer. D. 168 Schnell. M., see Riedi, K. 118. 133, 135, 136
Sassik, H., see Rotter. M. 310, 346, 347, 356 Schnell, M.• see Schatz, F. 118. 130. 131, 133, 135
Sasso. c., see Pasquale. M. 119 Schnelle. w.. see Gulden, Th. 219, 224
Sato, K. 43, 75. 76
Schnelle. W., see KObler. U. 309. 315
Sato, K.• see Abe. E. 14, 15
Schober. H.. see Loewenhaupt, M. 273
Sato, K.• see Medvedkin, G.A. 77
Schober. H.• see Rotter, M. 223
Satoh, Y. 9,24
Schober, H., see Sierks, C. 275
Satoh, Y.. see Nishikawa, Y. 5
Schon, J.H. 203. 205, 206, 238, 259
Savitskii, E.M. 214
Schott, G.M. 5. 7.16
Sawicki, M.• see GI6d, P. 49
Schrieffer, J.R.• see Bardeen, J. 227
Sawicki, M., see Kossacki, P.49, 74
SChroeder, H., see Tam, A.C. 106
Sawicki. M., see Wojtowicz,T. 32
Schuller. K.I.• see Dunlap, B.D. 212
Saxena, S.S. 209,216. 217
Schulthess, T.C. 44
Scalbert, D.. see Benoit a la Guillaume, C. 42, 60
Schachinger, E., see Manalo, S. 236, 237 Schultz. L., see Behr, G. 219
Schairer, W. 20 Schultz, L., see Bitterlich, H. 210. 287, 288
Schaper, A.• see Heirnbrodt, W. 10 Schultz. L., see Drechsler, S.-L. 234
Scharff, P., see Makarova, T.L. 286 Schultz. L.. see Freudenberger, J. 219, 224, 225,
Schatz. F. 118. 130, 131, 133, 135 233,234.236,237,241,266,279,280,284.
Schatz. F., see Riedi, K. 118. 133. 135, 136 287-289
Schelleng, J.. see Forester. D.W. 117 Schultz, L., see GUmbel, A. 242. 253. 254
Schenck. A.• see Le, L.P. 235 Schultz, L., see Hase, K. 205, 219
Schenck. A.• see Mulders. A.M. 322, 357 Schwabl, F., see Frey, E. 315, 320
Scherschligt, J•• see Baxter. D.V. 32 Schwan, K., see Divis, M. 242
Schiffer, P., see Chen. X. 10 Schweizer, I., see Abell. J.S. 316
Schiffer. P.• see Potashnik, SJ. 5, 9, 34, 50. 56. 77 Scuseria, G.E., see Xu. C.H. 202. 219, 230
Schiffmacher, G., see Godart, C. 218 Seaman, C.L., see Luke. G.M. 212
Schiffmacher, G.• see Tominez, E. 216, 219, 220 Sechovsky, V., see Javorsky, P. 325-327.357
Schilling. J.S.• see Gangopadhyay. A.K. 216. 223 Seemann. K., see Quandt, E. 117, 122, 188
Schilling, I.S., see Looney, C. 208 Seffar, A.• see Fontcuberta, J. 309
Schirber, I.E., see Williams, I.M. 209 Segawa, Y., see Kuroiwa, T. 38. 39
Schliemann, J. 61 Segmuller, A.• see Munekata, H. 5, 6, 10, 17
Schmidt, G., see Fiederling, R. 70 Segre, C; see Dunlap, B.D. 212, 256
Schmidt, H. 216. 241, 263. 264. 278 Seidl, E., see Rotter, M. 346, 347, 356
Schmidt. H.. see Wagner,T.A. 231, 285 Sell, D.O.. see Casey Ir., H.C. 38
396 AUTHOR INDEX
Sella. C.• see Szymczak. H. 151 Shimizu, H.• see Higo, Y. 65, 67
Sella, C .• see Zuberek, R. III, 151 Shimizu, H.• see Ohya, E. 10
Semenov, Y.G. 48 Shimizu, K. 231
Senda, M .• see Nagi, Y. 151 Shimizu, S., see Sonoda. S. 14,77
seo, J.W.• see Berger. R. 188 Shin. S., see Katsumoto, S. 20. 37, 50
Seo, S.W.• see Lee. K.H. 276, 288 Shin. S., see Yokoya, T. 243
Sera, M. 213 Shioda, R. 18
Seto, K.. see Hayashi. T. 62. 63 Shiokawa, J., see Sakai, T. 205, 273. 274
Setoguchi, H., see Matsuda, N. 210 Shrrai.M. 17,41,43.79
Settai, R.• see Koyanagi, A. 346 Shirai, M., see Akinaga, H. 13,78
Sham. LJ.• see Fernandez-Rossier, J. 49, 53, 54 Shirai, M .• see Ogawa, T. 17.42.43
Shapiro. S.• see Sternlieb, B. 219. 224 Shiraishi, J. 272
Shapiro. S.• see Zarestky. J. 212 Shirane, G., see Thomlinson. W. 234
Shewn. I.. see Huxley, A. 211 Shirane, G., see Zarestky, J. 212
Sheikin, I., see Saxena, S.S. 209 Shono, T. 26,58. 59
Shelton. R.N. 207. 208 Shono, T.• see Fukumura, T. 26
Shelton. R.N .• see Hoellwarth, C.c. 230 Shono, T., see Matsumoto, Y. 78
Shelton. R.N .• see Ku, H.C. 205. 219. 220 Short. S.• see Dabrowski. B. 181
Shelton. R.N., see Lee. W.H. 205. 251 Shovkun, D.V.• see Strukova, G.K. 226
Shelton. R.N., see Lynn. J.W. 220. 226, 242, 244. Shraiman, B.I., see Ye, J. 27
245.247-249.253,256,276
Shrivastava, K.N .• see Ghosh, P.K. 287
Shelton, R.N .• see Stanley. H.B. 218
Shtelmakh, K.F.. see Masterov, V.F. 19
Shen, A. 7-9. II. 15. 16.25, 36. 54. 57, 58, 61, 62
Shtrikman, H., see Dewhurst, C.D. 267. 277
Shen, A .• see Akiba, N. 65. 68
Shtrikman, H., see James. S.S. 267
Shen, A .• see Beschoten, B. 41, 47
Shubnikov, L.V. 228. 232. 233,240,241
Shen, A., see Guo. S.P. 7,10
Shulga, S., see Drechsler, S.-L. 216.228
Shen, A.• see Katsumoto, S. 31,49
Shulga, S.Y. 218, 223, 233. 241. 246. 281. 284
Shen, A.• see Kuroiwa, T. 38. 39
Shulga, S.Y., see Drechsler. S.-L. 228, 229. 234
Shen, A., see Matsuda, Y.H. 37, 38
Shulga, S.V., see Freudenberger, J. 266. 287
Shen, A., see Matsukura, F. 7. 21, 29. 30. 48-50,
Shulga, S.V.• see Fuchs. G. 209
55.56.63
Shulga, S.V.• see Rosner, H. 228-230. 233. 235
Shen, A .• see Ofuchi, H. 17
Shultz. AJ.• see Williams, J.M. 209
Shen, A.• see Ohno, H. 5. 15-17,22.25.26.54.
Siatek, K., see Sadowski, J. 15.26
55.57,58.68,69
Siegrist. T. 218. 246, 247, 251. 253. 270. 335
Shen, A.• see Oiwa, A. 20-23. 31. 49. 50. 55
Shen, A., see Omiya, T. 10 Siegrist. T.• see Cava. R.J. 202. 205. 220. 223.
Sben, A., see Sugawara, Y. 32 240,242.283
Shepelev, Yu.D.• see Shubnikov, L.V. 228. 232, Siegrist. T.• see Mattheiss, L.F. 208
233.240.241 Sienko. MJ.• see Edwards. P.P. 49
Sherwood. C .• see Gibbs. M.RJ. 94 Sierks, C. 275
Shestak, A.S., see Tomilo, Zh.M. 205. 220. 224 Sierks, c.. see Loewenhaupt, M. 273
Shibata. A.• see Izawa, K. 240. 285 Sierks, C .• see Rotter. M. 223
Shibata. N. 5 Siewenie, J.E .• see Dabrowski. B. 181
Shick, A.• see WU. R.Q. 105 Sigle, W.• see Riedi. K. 118. 133. 135. 136
Shick, A.B. 105 Sikka, S.K .. see Meenakshi, S. 216. 217. 243
Shieh. J.H .• see Jiang. PJ. 226 Silhanek, A.V. 205
Shieh. J.H., see Ku, H.C. 284, 285 Simon. A. 227
Shieh. J.H .• see Lin, M.S. 205 Simon. A., see Gulden, Th. 219, 224
Shima, T. 120. 156 Simon. A., see Henn, R.W. 238
Shima, T.• see Lim. S.H. 142 Simpson, J.A., see Swaddling. P.P. 159
Shimada. H., see Hayashi. T. 5. 62. 65 Singh. DJ. 220. 242, 266
Shimada. Y.. see Novosad. V. 189, 190 Singh. D.J .• see Pickett. W.E. 242. 253
Shimizu. H. 7.16.34.41,55 Sinha, S.• see Erwin, R.W. 159
Shimizu, H.• see Hayashi. T. 65 Sinha. S.K. 213
AUTHOR INDEX 397
Sinha. S.K., see Lynn, 1.w. 213, 220, 289, 335 Speck, 1.S., see Kawakami, R.K. 5, 10, 63
Sinitsyn, A. V., see Borombaev, M.K. 346. 348. Spedding, EH.• see Nigh, H.E. 320
349 Speliotis, A. 119
Sinning, S., see Doerr, M. 335 Speriosu, V., see Baril, L. 110
Siri, A.S., see Cimberle, M.R. 227 Speriosu, V.S., see Dieny, B. 110, 163
Skanthakumar, S. 221, 241, 242, 245, 252, 268 Sqiatek, K., see Sadowski, 1. 5
Skanthakumar, S., see Bourdarot, E 218 Sridhar, S., see Eskildsen, M.R. 269, 276
Skanthakumar, S., see Lynn, 1.w. 213, 220, 289, Sridhar, S., see Jacobs. T. 216
335 Srinath, S., see Kaul, S.N. 320
Skolozdra, R.V., see Komarovskaja, L.P. 327 Stachow, A., see Szczytko, J. 41
Skomski, R., see Sander, D. 106 Stadelmaier, RH.• see Reed, M.L. 14,77
Skorvanek, I. 168 Staliriski, B. 318. 357
Skumryev, V., see Coey, J.M.D. 320 Stampe, P.A. 324
Slaski, M., see Dunlap, B.D. 212, 256 Stankiewicz, 1., see Morellon, L. 336
Slawska-Waniewska, A. 169-171 Stanley, H.B. 218
Slawska-waniewska, A., see Szumiata, T. 105, Stanley. H.E., see Aharony. A. 208
172 Stassis, C., see Dervenagas, P. 230. 242, 245, 255,
Slawska-Waniewska. A., see Twarowski, K. 170 256
Siebarski, A., see Talik, E. 352, 356 Stassis, C., see Detlefs, C. 221, 222, 241. 242,
Sleight, A.W., see Luke, G.M. 212 245,253,254,310,335,357
Siupinski, T. 10, 36 Stassis, C., see Goldman, A.I. 233
Siupinski, T.. see Endo, T. 10 Stassis, C .. see Hill. J.P. 209
Siupinski, T., see Oiwa, A. 73 Stassis, C., see Sternlieb, B. 219,224
Siupinski, T., see Yanagi, S. 66 Stassis, c., see Yaron, U. 242, 248, 249, 251,270,
Slusky, 1.L., see He, T. 284, 285
271
Smetana. Z., see Borombaev, M.K. 346, 348, 349
Stassis, C; see Zarestky, 1. 212, 230
Smith, A.B. III
Stauss, G.H., see Krebs. U. 18
Smith, 1.L., see Nagarajan, R. 288
Steep, E., see GolI, G. 230
Smith, J.L., see Schmiedeshoff, G.M. 205, 206,
Steglich, E 242
230
Steiner, M.J., see Saxena. S.S. 209
Snel, C.E., see EI Massalami, M. 219, 220, 242,
Stephanovich, V.A., see Semenov, Y.G. 48
247
Stephens. J.M., see Kawakami, R.K. 75
Socha, E, see Le Gall, H. 143, 147, 148
Stephens, P.W., see Dertinger, A. 216, 217, 264,
Soderholm. L., see Dunlap, B.D. 212
266
SOdervall, U., see Sadowski, J. 9,16,77
Stemlieb, B. 219, 224
Sohn, H., see Luysberg, M. 7, 33
Sokulski, J., see Zuberek. R. III, 156 Stemlieb, B., see Goldman, A.I. 233
Soldatov, E.S., see Gubin, S.P. 168 Stemlieb, BJ., see Hill, J.P. 209
Solinus, V., see Ohldag, H. 20,44, 45, 50 Stemlieb, BJ., see Luke, G.M. 212
Solntseva, L.I., see Belov, K.P. 126 Stievenard, D., see Grandidier, B. 18
Song,C.221,256,273,276,284,285 Stobiecki, T. 109
Song, K.I. 221, 256 Stobiecki, T., see Zuberek, R. III, 156
Song, O.-S., see Bochi, G. 113 Stolz, W.• see Hartmann, Th. 10
Song, O.-S., see O'Handley, R.C. 109 Stolz, w.. see Heimbrodt, W. 10
Song, Y.S., see Choi, C.K. 262 Storm. A.R. 345
Sonier, 1.E. 213 Story, T. 5
Sonoda, S. 14,77 Story, T., see Eggenkamp, P.TJ. 60
Sontag, H. 106 Story, T., see Kepa, H. 66
Soo, Y.L. 12, 13, 17 Story, T., see Osinniy, V. 33
Soo, Y.L., see Krol, A. 17 Strassler, S., see Baltensperger, W. 211
Sorgic, 8., see Blazina, Z. 322 Strom, J., see Sadowski, J. 15,26
Souche, Y., see Givord, D. 141, 163 Strom, V. 205
Spanos, G., see Park, Y.D. 74 Stronach, C.E., see Bernhard, C. 213
Specht, P., see Luysberg, M. 7, 33 Stronach, C.E.• see Luke. a.M. 212
398 AUTHOR INDEX
Strukova, G.K. 226 Svoboda, P., see Rotter, M. 310

Struzhkin, V.V., see Eremets, M.I. 274, 276 Swaddling, P.P. 159
Strzeszewski, J., see Gebicki, W. 13 Swagten, HJ.M., see Eggenkamp, P.TJ. 60
Stucheli, N., see Ramirez, A.P. 271 Swenson, C.A., see Dolejsi, D.A. 315
Stucki, F., see Hulliger, F. 319 Swenson, C.A .. see Taylor, R.E. 311
Stunault, A., see Rotter, M. 310, 346, 356 Swil\tek, K., see Kossacki, P. 49, 74
Subramanian, M.A., see Luke, G.M. 212 Swil\tek. K., see Sadowski, J. 9, 16,62.77
Suga, S., see Veda, S. 44 Swiatek, K., see Szczytko, J. 19
Sugatani, S., see Konishi, S. 108 Swuste, C.H.W., see Eggenkamp, P.TJ. 60
Sugawara, W., see Arai, K.I. 189 Sysa, L., see Kalychak, Y.M. 331
Sugawara, Y. 32 Szczytko, J. 19,38,40,41,47,50
Sugawara, Y., see Katsumoto, S. 31,49 Szczytko, J., see Zajl\C, M. 13
Sugawara, Y., see Matsukura, F. 7, 21, 29, 30, Szewczyk, A., see Dabrowski, B. 180, 181
48-50,55,56,63 Szklarz, E.G., see Giorgi, A.L. 226
Sugawara, Y., see Ohno, H. 15,25,26,54,55,57, Szklarz, E.G., see Krupka, M.C. 205
58 Szumiata, T. 105,156, 172, 173
Sugawara, Y., see Oiwa, A. 20-23, 31,49. SO. 55 Szuszkiewicz, W. 66
Sugawara, Y., see Shen, A. 7-9, II, 15, 16,25,36, Szymczak,H.95, 105, 106, 151, 152, 154-157,
54,57,58,61,62 170, 172, 174, 175, 182
Sugimoto, S., see Kikuchi, S. 132, 133 Szymczak, H., see Dabrowski, B. 180, 181
Sugimoto, S., see Tanaka, T. 132 Szymczak, H., see Lachovicz, H.K. 109
Sugiyama, K., see Koyanagi, A. 346 Szymczak, H., see Szumiata, T. 105, 156, 172, 173
Suh, BJ. 214 Szymczak, H., see Szymczak, R. 234, 235, 240
SuhI, H. 267 Szymczak, H., see Troyanchuk, 1.0. 184
Suhl, H., see Anderson, P.W. 210 Szymczak. H.. see Zuberek, R. 105. III. 151, 154,
Suhl, H., see Matthias, B.T. 209, 213 156,157, 170
Sullivan, J.M., see Park, Y.D. 74 Szymczak, R. 234, 235, 240
Sulpice, A., see Bud'ko, S.L. 278 Szyszko, T., see G~bicki, W. 13
Sulpice, A., see EI Massalami, M. 223, 242
Szyszko, T., see Zajl\C,M. 13
Sun, J., see Ohya, E. 10 Szytula, A. 324
Sun, S.W. 112, 152
Sun, S.W., see O'Handley, R.C. 105
Sun, Y.Y., see Dezaneti, L.M. 242, 249, 251, 270, Tabata, H., see Saeki, H. 9, 24, 78
271 Tabata, H., see Ueda, K. 20,46, 78
Sun, Y.Y., see Gao, L. 245, 269, 270 Tabuchi, M., see Ofuchi, H. 14, 17
Sundaresan, A., see Eto, T. 181 Tachikawa, N., see Tsuruoka, T. 18
Sundqvist, B., see Makarova, T.L. 286 Tachiki, M., see Matsumoto, H. 227, 228, 230
Sungaila, Z., see Dunlap, B.D. 212, 256 Tailefer, L., see Boaknin, E. 238, 239, 241, 279,
Surdeanu, R., see Dewhurst, C.D. 202, 205, 220 285
Surdeanu, R., see Saha, N. 225 Takagi, H. 215. 230, 231, 241
Surovaya, G.N., see Belov, K.P. 126 Takagi, H., see Cava, R.I. 202, 205, 220, 223, 240,
Suryanarayana, P., see Hossain, Z. 242, 248, 253 242,283
Suzuki, K. 168 Takagi, H., see Eisaki, H. 231, 240
Suzuki, N.• see Ogawa, T. 17, 42, 43 Takagi. H.• see Izawa, K. 260
Suzuki, N., see Shirai, M. 17,41 Takagi, H., see Koshihara, S. 72
Suzuki, S., see Fujimori, H. 120 Takagi, H., see Luke, G.M. 212
Suzuki, S., see Sakai, O. 37, 61 Takagi, H., see Munekata, H. 36
Svechkarev, I. V., see Grechnev, G.E. 318 Takagi, H., see Murayama, C. 216
Svedlindh, P., see Mathieu, R. 175 Takagi, H., see Nohara, M. 268, 269, 279,
Svedlindh, P., see Sadowski, J. 9, 16,62,77 283-285
Svidzinskii, A.A., see Barash, Y.S. 284, 285 Takagi, H., see Yokoya, T. 243
Svoboda, P. 345 Takahashi, H., see Uehara, M. 216, 217, 264
Svoboda, P., see Javorsky, P. 326, 357 Takahashi, R., see Matsumoto, Y. 78
Svoboda, P., see Lindbaum, A. 345 Takamura, K. 7
AUTHOR INDEX 399
Takamura, K.• see Ando, M. 38 Teillet, J., see Danh, T.M. 94. 117. 118. 126
Takamura, K., see Zhao. J.H. 10 Teillet, J.• see Due. N.H. 94, 117-119. 126,
Takanaka, K. 219, 226 131-133. 142. 143, 148. 150. 167. 168
Takatani, Y., see Haneda, S. 12. 16 Tejedor, M. 168
Takatani, Y.• see Soo, Y.L. 12 Teresiak, A., see Narozhnyi, V.N. 248-252
Takeda. K.• see Choi, J.-H. 266 Tesanovic, Z., see Ye, J. 27
Takeda, K.. see Shimizu, K. 231 Tessier. M.• see Szymczak. H. 151
Takeda. Y.• see Ofuchi, H. 14. 17 Tessier, M., see Zuberek, R. Ill, 151
Takekawa, S.• see Kito, H. 273 Teter, J.P. 191
Takenaka, M., see Shimizu. H. 41 Thalmeier, P.• see Amici. A. 261. 262, 266
Takeuchi, A., see EI Massalami, M. 242 Thalmeier, P., see Izawa, K. 260
Takeuchi, T., see Katsumoto, S. 20. 37, 50 Thalmeier, P., see Maki. K. 240, 281. 282
Takeya, H. 211 Thanh, H.N., see Danh, T.M. 94,117.118,126
Takeya, H.. see Doerr, M. 335 Thanh. H.N., see Due, N.H. 94, 117-119. 126.
Takeya, H.• see Izawa, K. 240, 285 131-133
Takeya, H., see Kawano. H. 266. 267 Theodoropoulou, N. 14
Takeya, H., see Sakata, H. 271 Theodoropoulou, N., see Overberg, M.E. 13
Takeya, H.• see Sera. M. 213 Thiel. R.C.• see Mulder, F.M. 269
Takeyama, S.• see Nojiri, H. 19 Thilderkvist, M.• see Linnarson, M. 19
Takezawa, M., see Arai, K.I. 189 Thomas, G.A., see Liu, S. 37
Talik, E. 352. 356 Thomlinson. W. 234
Talik, E.• see Jarosz, J. 326, 327, 357 Thomlinson. W., see Lynn. J.W. 211
Talik, E., see Kusz, J. 352-354. 356 Thompson, J.D.• see Alieno, E. 216, 217
Tallon, J.L., see Bernhard, C. 213 Thompson. J.D., see Le. L.P. 235
Tam. A.C. 106 Thompson. J.D., see Movshovich, R. 265, 266
Tam. A.C.• see Sontag, H. 106
Thompson. J.D., see Sonier. J.E. 213
Tanaka. M. 26. 67
Thompson. J.R.• see Kogan, V.G. 273
Tanaka. M.• see Ando, K. 40
Thompson, J.R.• see Paul, D. McK. 272, 274
Tanaka. M.• see Grandidier, B. 18
Thompson, J.R.• see Silhanek, A.V. 205
Tanaka. M., see Hayashi, T. 5, 62, 63, 65
Thompson, J.R. see Song. K.I. 221. 256
Tanaka. M.• .Iee Higo, Y.65, 67
Thompson. J.R., see Yethiraj, M. 279
Tanaka, M., see Ohya, E. 10
Thomson. T.. see Riedi, P.C. 93
Tanaka. M., see Okabayashi, J. 13,21,31,44-46,
Thornton. M.J.• see Ziese, M. 4
50,55
Thorsen, A.C., see Fink, H.J. 205. 208. 211
Tanaka. M.• see Saito. H. 13
Tanaka. M., see Shimizu, H. 7,16,34,41,55 Thuy. N.P., see Danh. T.M. 116. 122. 126
Tanaka. M.. see Shioda, R 18 Thuy. N.P., see Due. N.H. 140. 142. 157, 158
Tanaka, M., see Szczytko, J. 19 Thuy, N.P., see Tung. L.D. 330. 357
Tanaka. T. 132 Tiefel. T.H.• see Jin, S. 175
Tanaka, T.. see Kikuchi. S. 132. 133 Tiercelin, N.• see Le Gall. H. 143, 147. 148
Tani, M.• see Shen, A. 9, 15, 16 Tils, P., see Sierks, C. 275
Taniguchi, 0 .. see Awano, H. 151 Ting, C.S., see Wang, Z.D. 216. 217
Tanimoto. R, see Tsuruoka, T. 18 Tinkham, M. 255
Taratynov, v.P.• see Belov, K.P. 126 Tishin, A.M., see Dan'kov, S.Y. 320
Tatarenko, S., see Baron, T. 5 Tishin. A.M., see Koksharov, Yu.A. 168
Tatarenko, S.• see Ferrand. D. 5. 27.49,54.60 Tjutrina, L.V.• see Rybaltchenko, L.F. 267. 277
Tatarenko, S.• see Haury. A. 5. 49. 54 Togano, K.. see Arisawa, S. 219
Tatarenko, S.• see Kossacki, P.49. 74 Tokura, Y. 4
Taylor. J.W. 318, 357 Tokura, Y.• see Kimura. T. 181-183
Taylor. RD.• see Willis, J.O. 258 Tokura, Y.• see Kuwahara, H. 178
Taylor. R.E. 311 Tokura, Y., see Luke, G.M. 212
Taylor. RE.• see Touloukian, Y.S.320 Tomala, K. 219. 335. 357
Taylor, RH. 316 Tomala, K.• see Bialic, D. 328, 356
Tazima, M. 7. 9 Tomilo, Zh. 219, 220, 226
400 AUTHOR INDEX
Tomilo, Zh.M. 205, 220, 224 Twarowski, K. 170

Tominez, E. 216, 219, 220, 242 Tworzydlo, 1., see Szczytko, 1. 41
Tominez,E., see Dhar, S.K. 227, 24(}..242, 251
Tominez, E., see Godart, C. 220, 242, 260 Uchida, H., see Wada, M. 103, 118, 122, 133-135
Tomioka, Y., see Kimura, T. 181-183 Uchida, H.H., see Wada, M. 103, 118, 122,
Tomioka, Y., see Kuwahara, H. 178 133-135
Tomioka, Y., see Tokura, Y. 4 Uchida, S., see Cava, R.I. 202, 205, 220, 223, 240,
Tomka, G.J., see Arnaudas, J.1. 159, 160 242,283
Tomka, G.J., see Ciria, M. 106, 159
Uchida, S., see Eisaki, H. 231, 240
Tomka, G.J., see Riedi, P.C. 93
Uchida, S., see Luke, G.M. 212
Tomlinson, P., see Levin, E.M. 336
Uchida, S., see Murayama, e. 216
Tompkins, M.V., see Schmiedeshoff, G.M. 230
Uchida, S., see Takagi, H. 215,230,241
Tomuta, M., see Chiriac, H. 168
Ueda, K. 20, 46, 78
Tomy, c:v. 206,256,258,259
Ueda, S.44
Tomy, C.V., see Chang, L.J. 241, 242, 275, 278
Uehara, M. 216, 217, 264
Tomy, C.V., see Paul, D. McK. 258, 269, 276
Uemura, Y.J., see Luke, G.M. 212
Tomy, C.V., see Rybaltchenko, L.F. 267, 277
Uher, C., see Lee, c.a 113
Tomy,e.V.• see Silhanek, A.V. 205
Uhlarz, M., see Pfleiderer, C. 226, 237
Tomy, C.V., see Song, K.1. 221, 256
Tomy, C.V., see Yanson, I.K. 276
Ulrici,w., see Kreisel, 1. 18
Umezawa, H., see Matsumoto, H. 227, 228, 230
Tomy, C.V., see Yethiraj, M. 272, 279
Urano, C., see Koshihara, S. 72
Torgeson, D.R., see Suh, B.J. 214
Urano, C., see Munekata, H. 36
Torng, C.J., see Wu, M.K. 208
Ushioda, S., see Tsuruoka, T. 18
Toshima, T., see Nagi, Y. lSI
Uspenskii, Yu.A., see Kulatov, E. 43
Toth, L., see Fink, H.J. 205, 208, 211
Ustinovich, S., see Tomilo, Zh. 219, 220. 226
Touloukian, Y.S. 320
Uwatoko, Y. 273
Toussaint, 1.C., see Givord, D. 133, 141, 163
Uwatoko, Y., see Eto, T. 181
Toussaint, J.C., see Wiichner, S. 141, 163
Tovar. M .• see Alejandro, G. 175
Travkin, V.D., see Mullin, A.A. 181 Vaast, C; see Bonville, P. 270
Treger, D.M.. see Wolf, S. 4 Vaglio, R., see Andreone, A. 215, 219, 241
Treutmann, w., see Heimbrodt, W. 10 van Bockstal, L., see van Esch, A. 5, 10, 26, 30,
Treyvaud. A., see Peter, M. 214 34,55
Trifonov, A.S., see Gubin, S.P. 168 van de Riet, E. 106
Trippel, G. 106 van der Beek, C.J., see Izawa, K. 240, 285
Trochez, 1.e., see Fontes, M.B. 213 van Dover, R.B., see Cava, R.J. 202, 205, 220,
Troyanchuk, 1.0.184 223,240,242,283
Tsabba, Y., see Feiner, I. 241, 255 van Esch, A. 5, 10, 26, 30, 34, 55
Tsuchiya, H., see Hayashi, T. 5 van Esch, A., see de Boeck, 1. 5, 9
Tsuruoka,T. 18 van Hoof, C., see de Boeck, J. 5, 9
Tsvyashchenko, A.v., see Narozhnyi, V.N. van Roy, W., see van Esch, A. 10
235-238,248-252 van Schilfgaarde, M. 29, 44
Tuan, L.Q., see Due, N.H. 168 van Schilfgaarde, M., see Belashchenko, K.D. 207
Tuan, N., see Javorsky, P. 326, 357 van Smaalen, S., see Dettinger, A. 216, 217, 264,
Tuan, N.A., see Due, N.H. 94, 133, 140, 142, 143, 266
148, ISO, 157, 158, 167 van Stapele, R.P. 75
Tung, L.D. 330, 357 van Sternbergen, A.S., see van Esch, A. 5, 26, 30,
Twardowski, A., see Ando, K. 40 34,55
Twardowski, A., see Kepa, H. 66 van Vucht, J.H.N. 322
Twardowski, A., see Mac, W. 19 Vanacken, 1., see Respaud, M. 179
Twardowski, A., see Matsuda, Y.H. 37, 38 Vanelle, E., see Sadowski, J. 10
Twardowski, A., see Szczytko, J. 19,38,40,41, Vanoni, w., see Bud'ko, S.L. 216, 217
47,50 Vantomme, A., see Wahl, U. 14
Twardowski, A., see Zajac, M. 13 Varma, C.M., see Blount, E.I. 238, 239
AUTHOR INDEX 401
Vanna, C.M., see Ng, TK 210 Vukadinovic, N., see Le Gall, H. III
Vasson, A., see Kreisel, J. 18 Vulliet, P., see Sanchez, J.P. 219. 220. 224, 225
Vasson, A.-M., see Kreisel, J. 18 Vulliet, P., see Tomala, K. 219, 335, 357
Vaterlaus, A., see Weber, W. 114 Vurgaftman, I. 62
Vavra, W., see Lee, C.H. 113
Vazquez, M., see Areas, J. 172
Waag, A., see Fiederling, R. 70
Vazquez, M., see Hernando, A. 94
Wada,M. 103, 118, 122, 133-135
Vazquez, M., see Stobiecki, T. 109
Wagener, W., see Sanchez, D.R. 226, 266
Vazquez, M., see Tejedor, M. 168
Wagner. T.A. 231, 285
Verbanck, G., see van Esch, A. 5, 26, 30. 34. 55
Wahl, U.14
Verbeek, B.H .. see Nieuwenhuys, GJ. 231, 280,
Walf. G.H., see Sanchez, D.R. 226, 266
283,284
Walker, E., see Peter, M. 214
Verdier, T., see Due, N.H. 94, 133
Walker, I.R., see Saxena, S.S. 209
Verges, P., see Prassides, K. 231, 240
Wallace, WE., see Debray, DK 350, 356
Vemiere, A.• see Brison, J.P. 220, 283
Wallace. WE., see Walline, R.E. 340
Vijayakumar, V., see Meenakshi, S. 216,217,243
Walline, R.E. 340
Vijayaraghavan, R., see Dhar, S.K. 227, 240-242,
Walukiewicz, W 33
251
Wan, X., see Bhatt, R.N. 48
Vijayaraghavan, R., see Godart. C. 218
Wandass, J.H. 106
Vijayaraghavan, R., see Gupta. L.C. 216. 288
Wang. B.W. 94
Vijayaraghavan, R., see Hossain, Z. 219, 242. 248.
Wang, G.-F. 238
253,271
Wang, H.H., see Williams. J.M. 209
Vijayaraghavan, R., see Mazumdar, Ch. 234, 235,
Wang,I.H.176
270
Vijayaraghavan, R., see Meenakshi, S. 216. 217, Wang, K., see Vrijen, R. 79
243 Wang, S., see Ohno, Y. 63. 73
Vijayaraghavan, R., see Nagarajan, R. 216. 225. Wang, S., see Yang, J. 9
242,253 Wang, X., see Rhee, I.Y. 209
Vinnikov, L. Ya. 260. 264, 273 Wang, X.F., see Louriero da Silva 62
Viret, M .• see Coey, J.M.D. 4,175 Wang, X.Q., see Jee, C.S. 323, 357
Vittoria, C .. see Bushnell. S.E. III Wang. Y., see He, T. 284. 285
Vittoria, C., see Forester, D.W 117 Wang, Y.Q., see Wu. M.K. 208
Vogt, T., see Detlefs, C. 241, 242, 245, 253, 254 Wang, Z.D. 216, 217
Voiron, I., see EI Massalami, M. 242 Wang, Z.R., see Xu. M. 225
Voiron, J., see Gavigan. J.P. 123 Wappling, R, see Frey, E. 315. 320
Voiron, I., see Givord, D. 133, 141, 163 Wiippling, R, see Mathieu. R. 175
Voiron, I., see Wiichner, S. 141, 163 Ward, R.C.C., see Arnaudas, 1.1. 159, 160
Voitenko, A. I., see Gabovich, A.M. 238 Ward, RC.C., see Ciria, M. 106, 159
Vollmer, R, see Pfleiderer, C. 226, 237 Ward. R.C.C., see de la Fuente. C. 162
Volz, K.. see Heimbrodt, W 10 Ward, R.C.C., see del Moral. A. 159-162
von Lips, H. 260--262 Ward. RC.C., see Jehan, D.A. 159
von Lips, H., see Drechsler, S.-L. 234 Ward. R.C.C.• see Swaddling. P.P. 159
von Lips, H., see Mazumdar, Ch. 229 Warden, M., see Cywinski. R. 207
von Molnar, S. 34 Wasiela, A., see Ferrand. D. 5, 27.49,54,60
von Molnar, S., see Coey, I.M.D. 4, 175 Wasiela, A., see Haury, A. 5.49, 54
von Molnar. S., see Munekata, H. 5, 6, 10, 17 Wasiela, A., see Kossacki, P. 49. 74
von Molnar, S., see Ohno, H. 5, 10, ll, 32. 34, 35 Wasserman, E.F. 310
von Molnar, S., see Wolf, S. 4 Watanabe, M., see Katsumoto, S. 20, 37, 50
Vonrob'ev, G.P., see Popov, Yu. F. 179, 180 Watanabe. T., see Izawa, K. 260
Vorderwisch, P., see Gasser, U. 241 Watanabe, T., see Yokoya, T. 243
Vorobev, G.P., see Kadomtseva, A.M. 180 Watts, R.• see Ali, M. 109
Vouroutzis, N.• see Speliotis, A. 119 Watts. R.• see Gibbs. M.RJ. 94. 188
Vrijen, R. 79 Wawro, A., see Zuberek, R. Ill, 154. 156, 157,
Vukadinovic, N. III 170
402 AUTHOR INDEX
Weber. E.R.• see Luysberg, M. 7. 33 Wimbush. S.C .• see Hase, K. 205

Weber. M. 106 Winiarska, A.. see Tornala, K. 219
Weber. M.• see Schmidt. H. 264 Winiarski. A.• see Jarosz. J. 326. 327. 357
Weber. W. 114 Winzek.B, 137-139
Weber. w.. see Back. e.H. 174 Winzer. K. 214. 234
Webster. PJ. 318 Winzer. K.• see Drechsler. S.-L. 234
Wecht. KW.• see Casey Jr.• H.e. 38 Winzer. K.. see Goll, G. 230
Wehner. B.• see Behr, G. 225 Winzer. K.. see Heinecke. M. 205
Wehner. 8.. see Belger. A. 335 Winzer. K.. see Mandal, P. 205. 208. 211
Wehner. B.• see Jaenike-Roessler, U. 277 Winzer. K.. see PengoZ.Q. 209
Weht.R.206 Winzer. K.. see Riblet. G. 203
Wei. S.-H. 44 Winzer. K.• see Shulga, S.V. 233. 241. 281
Wellman. PJ.• see van Esch. A. 5. 26. 30. 34. 55 Wisniewski. A.• see Dabrowski. 8. 180. 181
Wells. M.R .• see Arnaudas, 1.1. 159. 160 Wisniewski. A.• see Zuberek, R. Ill. 156. 157.
Wells. M.R.. see Ciria, M. 106. 159 170
Wells. M.R .• see de la Fuente. C. 162 Witer, K.• see Hansen. P. 115. 117
Wells. M.R .• see del Moral. A. 159-162 Wohlfarth. E.P. 208. 231
Wells. M.R.. see Jehan, D.A. 159 Wojtowicz. T. 32
Wells. M.R .• see Swaddling. P.P. 159 Wolf. M.• see Freudenberger, J. 236. 237
Welp. U.• see de Wilde. Y. 266. 277 Wolf. M.• see MUller. K.-H. 216
Welp. U.• see Metlushko, V.24O Wolf. P.A.• see Story. T. 5
Weng. GJ.• see Nan. C.-W. 173 Wolf. S.4
Wermeille. D.• see Song. C. 221. 256. 284. 285 Wolf. SA 4
Werner. D.• see Michor, H. 223. 279 Wolff. P.A. 48
Werthamer. N.R .• see Hohenberg, P.e. 202 Wollan. E.O .. see Cable. J.w. 320. 356
Westgate. e.w.. see Chien. C.L. 27 Won. H. 284
Whangbo. M.H .• see Williams. J.M. 209 Won. H.. see Maki, K. 240.281.282
White. G.K .• see Barron. T.H.K. 311. 313 Wood. C.E.C .• see DeSimone. D. 6
White. G.K .• see Taylor. R.E. 311 Woodfield. B.F.. see Wright. D.A. 207
Widder. w.. see Bauernfeind. L. 213 Wright. D.A. 207
Wiesner. U.• see Buchgeister, M. 220 Wr6bel. J.• see Kossacki, P. 49.74
Wijngaarden. R.I. 205 Wrona. J.. see Stobiecki, T. 109
Wijngaarden. R.I .• see Saba, N. 225 wu, G.H.. see Wang. s.w 94
Wilamowski. Z.. see Fedorych. O.M. 19. 58 Wu. J.• see Cao. Q.Q. 178
Wildes. A.R .• see Boothroyd. A.T. 223 Wu. J.H .. see Wang. J.H. 176
Wiley. J.D. 73 wu, M.K. 208
Wilhelm. M.• see Hillenbrand. 8. 216. 228. 240. we, R. 105
241. 250. 278 Wu, R.. see Freeman. AJ. 105. 109
Wilhelm. M.• see Peter. M. 214
Wu. R.Q. 105
Wilhoit. D.. see Baril. L. 110
WUchner. S. 141. 163
Wilhoit. DR. see Dieny, B. 110. 163
WUchner. S.• see Givord, D. 133. 141. 163
Wilkening. W.• see Schneider. J. 19
Wursch, Ch.• see Back. e.H. 174
Wilkinson. I.. see Dugdale. S.B. 230. 240
WUrsch. Ch.. see Weber. W. 114
Willemsen. B.A .• see Jacobs. T. 216
Wyder, P.• see Goll, G. 230
Williams. A.R .• see Janak. J.F. 315
Wyder. P.• see Rybaltchenko, L.F. 267. 277
Williams. G.• see Stampe, P.A. 324
Wyder. P.• see Yanson, I.K. 276
Williams. J.M. 209
Wylie. M.T.• see Cywinski. R. 207
Williams. P.I. 119. 122. 133
Williams. P.I.• see Grundy. PJ. 117
Willis. J.O. 258 Xiong. X.• see Dabrowski. B. 181
Willson. A.• see Park. Y.D. 74 Xiurong, W.. see Houqing, Z. 185
Wilson. P.• see Chopra. H.D. 144 Xu. C.H. 202. 219. 230
Wilson. R.• see Liu, S. 37 Xu. H.. see Jiang. X. 119
Wilson. R.G .• see Theodoropolpu, N. 14 Xu. M. 225
AUTHOR INDEX 403
Xu. M.• see Cho. B.K. 242. 245, 249, 267 Yatskar, A.• see Bud'ko, S.L. 267
Xu. M., see Johnston-Halperin, E. 209 Yatskar, A.• see Canfield, P.C. 215. 252, 267. 270
Xu, M.• see Kogan. V.G.273 Yatskar, A., see Cho, B.K. 242, 249, 256, 257
Xue, Y.Y.• see Dezaneti, L.M. 242, 249. 251. 270, Yatskar, A., see Lacerda, A. 205, 217, 220, 251,
271 289
Xue, Y.Y.. see Gao, L. 245. 269. 270 Ye,J.27
Ye, J.• see zou, Z. 211. 213, 288
Yee, D.S.. see Sadowski. 1. 10
Yablonovitch, E., see Vrijen, R. 79
Yeshurun, Y.• see Prozorov, R. 284
Yakinthos, J.K., see Gamari-Seale, H. 323
Yethiraj. M. 272, 279
Yakoby, E.R., see Prozorov, R. 284
Yethiraj. M., see Chang. L.J. 242
Yamada, M. 13
Yethiraj, M., see Paul, D. McK. 258, 269, 276
Yamada, M.. see Okabayashi, J. 79
Yamaguchi. M., see Hayashi. Y. 117. 119-121. Yethiraj, M.• see Song, K.I. 221, 256
Yokoya,T. 243
133
Yokoyama, H.• see Shima, T. 120, 156
Yamaguchi. M.• see Honda, T. 119, 133. 186. 187
Yamaguchi, Y.. see Onodera, H. 216, 217 Yoshida, Y., see Koyanagi, A. 346
Yoshino,1.. see Hazama, Y.79
Yamaguchi, Y.. see Yamauchi. H. 231
Yamamoto, K.• see Hazama, Y.79 Yoshino.J.• see Nishikawa, Y.5
Yamamoto, K., see Okazawa, D. 13 Yoshino.1., see Okazawa, D. 13
Yamamoto. K., see Tazima, M. 7. 9 Yoshino. J., see Satoh, Y.9. 24
Yoshino, J., see Tazima, M. 7,9
Yamamoto,T. 29. 33
Yamamoto,T.• see Choi, 1.-H. 266 Yoshizawa, H.• see Kawano. H. 266. 267
Yamamoto,T.• see Katayama-Yoshida. H. 76 Yosida, K. 223
Yamamoto. Y., see Sonoda, S. 14,77 You. Y.B.• see Jiang, P.1. 226
Yamamura, M., see Haneda, S. 12, 16 You. Y.B.• see Ku, H.C. 284,285
Yamasaki,J., see Narita, K. 108 You. Y.B., see Lai, C.C. 276
Yamauchi, H. 231 You, Y.B., see Lin, M.S. 205
Yamauchi. H.. see Onodera, H. 216, 217 Youn, K.B., see Szymczak. H. 151
Yanagi, S. 66 Youn, K.B.• see Zuberek, R. III. 151
Yanagi, S.• see Endo, T. 10 Youn, S.1., see Lee, J.1. 205
Yanagi, S.• see Slupinski, T. 36 Young, O.K., see Johnston-Halperin, E. 71
Yanase, A., see Kasuya, T. 4 Young, D.K., see Ohno, Y. 70, 71
Yang, OX. see Chopra, H.D. 144 Yuen, T.• see Lin, C.L. 318
Yang, H.D., see Shelton. R.N. 207. 208 Yvon, K.. see Gratz, E. 317
Yang, I.-s. 229 Yvon, K.• see Pacheco. J.V. 327
Yang, I.S., see Mun, M.O. 216. 217
Yang,1. 9 Zackay, V.F.. see Fink, H.1. 205, 208, 211
Yanhong, X.• see Houqing, Z. 185 Zaets, W., see Saito, H. 13
Yanson, I.K. 276 Zahn, G., see Jaemke-Roessler, tJ. 277
Yao, Y.D.. see Lee. WH. 205 Zahn. P., see Drechsler. S.-L. 234
Yao, Y.D., see Lin, M.S. 205 Zahurak, S.M.• see Rosseinsky, M.1. 209
Yaouanc,A. 322 Zajl\C, M. 13
Yaouanc, A., see de Reotier, P.O. 322 Zalalutdinov, M., see Hayashi, T. 26
Yaouanc, A.• see Mulders. A.M. 322. 357 Zandbergen, H.W 219, 220, 223. 242, 266
Yaron, tJ. 242, 248, 249. 251,270. 271 Zandbergen, H.W, see Cava, R.I. 202, 205, 220,
Yaron, tJ., see Eskildsen, M.R. 269, 276 223,240,242,283
Yasuda, H. 7 Zandbergen, H.W., see He. T. 284, 285
Yasuda,H.• see Abe, E. 14. 15.71 Zandbergen, H.W., see Michor, H. 223, 279
Yasuda, H., see Guo, S.P. 7 Zandbergen, H.W, see Siegrist, T. 218. 246, 247.
Yasuda. H., see Yang. J. 9 251,253,270,335
Yasuda,T.• see Kuroiwa, T. 38, 39 Zapf. V.Z., see Bauer, E.D. 214
Yates. R.B., see Gibbs, M.R.1.94. 188 Zaremba, V.I., see Kalychak, Y.M. 331
Yatskar, A. 251. 271, 272 Zarestky, J. 212, 230
404 AUTHOR INDEX
Zarestky, 1., see Dervenagas, P. 230, 242, 245, Zhou, Y.K., see Kanamura, M. 73
255,256 Ziebeck, K.R.A., see Parsons, M.J. 318, 357
Zarestky, J., see Goldman, A.1. 233 Ziebeck, K.R.A., see Taylor, J.w. 318, 357
Zaslavsky, A., see Munekata, H. 1 I, 36, 57, 58 Zieglowski, 1. 353
Zavada, J.M .. see Theodoropolpu, N. 14 Ziese, M. 4
Zavalii, P.Y., see Kalychak, Y.M. 331 Zimgiebl, E., see Galffy, M. 275
Zawadski, J., see Buchgeister, M. 220 Zittartz, J., see Miiller-Hartman, E. 219, 221, 255
Zeldov, E., see Dewhurst, C.D. 202, 205, 220, 267, Zou,Z.211,213,288
277 Zuberek, R. 105, III, 151. 154, 156, 157, 170, 173
Zeldov, E., see James, S.S. 267
Zuberek, R., see Lafford, A. 156
Zene~C.43,48,50,51, 175
Zuberek, R., see Slawska-Waniewska, A. 170, 171
Zeng, H.K., see Lee, W.H. 205, 276
Zuberek, R., see Stobiecki, T. 109
Zenitani, Y.,see Ekino, T. 259
Zuberek, R., see Szumiata, T. 105, 156, 172, 173
Zenitani, Y., see Nagamatsu, 1. 202, 203
Zuberek, R., see Szymczak, H. 151, 174
Zhang, F.C. 42, 60
Zuckermann, M.J., see Cochrane, R.W. 122
Zhang, K.• see Dunlap, B.D. 212, 256
Zhang, S. 27 Zudov, M.A., see Matsuda. Y.H. 38
Zhang, S.Y., see Cao, Q.Q. 178 Zunger, A. 45
Zhang, Z.H., see Chu, R.K. 219 Zunger, A., see Mahadevan, P. 78
Zhao, G., see Garda-Landa. B. 176, 177 Zunger, A., see Wei, S.-H. 44
Zhao,I.H. 10 Zutic, I. 71
Zhao, T.S .• see Lee, J.1. 205 Zutic, I.. see Das Sarma, S. 79
Zhao, Y.-I. 42, 44, 78 Zverev, Y.N., see Strukova, G.K. 226
Zhou. X.Z., see Stampe, P.A. 324 Zvezdin, A.K., see Popov, Yu. F. 179, 180
Zhou, Y.-K., see Hashimoto, M. 10, 14 Zymierska, D., see Zuberek. R. 105, 170
Subject Index
anisotropic thermal expansion, 356 charge localisation

anisotropy of H c2' 231 - in manganites (perovskite), 177
anomalous Hall effect clean-limit type 11 superconductors, 281
- in diluted magnetic semiconductors, 10, II, 14, 15, coefficient of magnetostriction, 99, 102, 108
27,29.34,36,50 coherence length at T = 0
antiferromagnetic ordering - of YNi2B2C and LuNi2B2C, 240
- in RT2B2C compounds, 215 colossal magnetoresistance
Arrott plots - in cobaltates (perovskite), 174
- of diluted magnetic semiconductors, 24, 28 - in layered manganese oxides, 182
atomic force microscopy (AFM) - in manganites (perovskite), 174, 175
- of diluted magnetic semiconductors. 9,14 Coulomb pseudopotential
atomic-layer epitaxy (ALE) - of YNi2 B2C and LuNi2 B2C, 240
- of diluted magnetic semiconductors, 10 critical expansion, 315
critical scattering
Bardeen-Cooper-Schrieffer (BCS) theory, 227 - in diluted magnetic semiconductors, 30
bending device, 109, 110, 113 critical temperatures for superconductivity
bilinear two ion exchange interaction, 312 - of RT 2B2C compounds, 215
Bloembergen-Rowland indirect exchange crystalline electric field
- derivation, expressions, %
- in diluted magnetic semiconductors, 48
- of RT2B2C compounds, 243
Bloembergen-Rowland mechanism
Curie-Weiss behaviour, 35
Curie-Weiss fit
boron isotope effect, 227
- of diluted magnetic semiconductors, 24
- in YNi2B2C, 229
Curie-Weiss plot
bound magnetic polarons (BMP)
- in diluted magnetic semiconductors, 31, 60, 48
cyclotron resonance
Brillouin behavior
Brillouin function de Gennes scaling, 216
- in diluted magnetic semiconductors, 23, 51 Debye model, 311
Burstein-Moss shift Debye temperature
- in diluted magnetic semiconductors, 40 - of YNi2B2C and LuNi2B2C, 240
density of states (005), 74
Coo based superconductors, 206 - in diluted magnetic semiconductors, 21,44,45,47,
cantilever, 113 53,56,74
- effect of clamping, 106 density of states at the Fenni level
- experimental methods, 110, 159, 173 - for Y(Nil_xCoxhB2C and Y(Nil_xCuxhB2C,
- general, definition, 94, 106 278
- in applications (devices, MEMS), 119, 186 - of RNi2B2C superconductors, 241
CEF -ofYxLul_xNi2B2C,282
- derivation, expressions, 162 - of YNi2B2C and LuNi2B2C, 240
- general, definition, 111 depression of superconductivity
- in ErILu superlattices, 162 - in (Y,Dy)Ni2B2C and (Lu,Dy)Ni2B2C, 288
405
406 SUBJECf INDEX
diluted magnetic semiconductors (OMS). 4 - of diluted magnetic semiconductors, 41

Dingle temperature form effect, 93. 95
- of YNi2B2C and LuNi2B2C, 240 full potential augmented plane wave (FLAPW) method
dirty limit - in diluted magnetic semiconductors, 42
- in YxLul_xNi2B2C. 281
OMS, 27, 51 GdCu, 343
double exchange giant magnetoresistance (GMR)
- in diluted magnetic semiconductors. 51.60 - in (Tb,Fe)/(FelCo) multilayers, 151
double exchange mechanism - in granular solids, 168
- in diluted magnetic semiconductors. 19,43 - in trilayer structures of diluted magnetic semiconduc-
Drude conductivity tors, 64
- in diluted magnetic semiconductors. 37 Ginzburg-Landau parameter at T = 0
-ofYNi2B2C and LuNi2B2C, 240
elastic modulus: l:!.E effect GMS, \16, 132, 191
- general, definition, 93, 94, 150 - in (Tb,Fe.Co)/Fe multilayers, 157
electron spin resonance (ESR). 19.20 - in a-Tb(Fe,Co). 127
- of diluted magnetic semiconductors, 18 - in layered manganese oxides, 182
electron--phonon coupling constant - in low fields, 157, 186
- ofYNi2B2C and LuNi2B2C, 240 - of RT alloys, 116, 140
- in YxLul_xNi2B2C. 282 - optimalisation, optimal values. 117. 191
Eliashberg theory, 228 Gor'kov-Eliashberg theory, 229
enhanced pair breaking
- in (Y,R')Ni2B2C, 287 Hall coefficient
epitaxial misfit (mismatch), 113 - for LuNi2B2C and YNi2B2C, 236, 237
epitaxial strains Hall effect
- in ErlLu superlattices, 162 - for YNi2B2C and LuNi2B2C. 236
- R/(YlLu] superlattices, 159 Hall resistivity heterostructures
- second order (parameters), 105 - for LuNi2B2C and YNi2B2C, 237
expansion - of diluted magnetic semiconductors, 61
- derivation, expressions, 98 hexagonal vortex lattice
extended domain wall (EDW) - in YNi2B2C and LuNi2B2C, 274
- general, definition. 163 hybridisation
- (Nd,Co)/(Th,Co)/(Nd,Co) sandwich system, 163 - between 3d and 5d states, 114, 115
- (Th.Co)/(Nd,Co)/(Th,Co) sandwich system. 163
- in (Th,Fe)/(Fe,Co,B,Si) muhilayers, 167 (In,Mn)As quantum dots (QDs), 17
extended x-ray absorption fine structure (EXAFS) induced anisotropy, 103
- of diluted magnetic semiconductors, 12. 17 - experimental methods. 108,109
- FeffbFeCoIFe sandwich, 144
Faraday rotation - in a-(Tb,Fe) thin films, 119
- in diluted magnetic semiconductors, 39, 78 - in nanocrystalline alloys, 172
Fermi velocity - thickness dependence. 113
- of YNi2B2C and LuNi2B2C, 240 infrared (lR) and far infrared (FIR) transmission spec-
ferromagnetic imprinting tra
- in diluted magnetic semiconductors, 75 - of diluted magnetic semiconductors, 37
ferromagnetic resonance (FMR) infrared spectroscopy
- in diluted magnetic semiconductors, 19 - of diluted magnetic semiconductors, 19
ferromagnetic semiconductors, 1,75 initial-susceptibility method, 109
field induced magnetostriction insulator-to-metal transition
- in GdCU2, 347 - in diluted magnetic semiconductors, 15, 19.21,49
field-effect transistor (FET) interdiffusion, 139, 152, 155. 158
- of diluted magnetic semiconductors, 73 - in terfecohanIFe rnultilayers, 157
first principles calculation interlayer coupling
- of diluted magnetic semiconductors, 78 - in trilayer structures of diluted magnetic semiconduc-
first-principles studies tors, 64, 66
SUBJECT INDEX 407
intermediate valence of cerium - derivation. expressions. III

- in CeNi2B2C. 246 - in diluted magnetic semiconductors. 23. 24, 54. 57
interplay of superconductivity and magnetism. 207 - in thin films. 122
- in RT2B2C compounds. 265 - of diluted magnetic semiconductors. 36
intra-center correlation energy - optimalisation, optimal value. 190
- in diluted magnetic semiconductors. 41 - perpendicular/in-plane. 116
- thickness dependence. 141
Jahn-Teller distortion magnetic circular dichroism (MCD)
- in diluted magnetic semiconductors. 18 - in diluted magnetic semiconductors. 40
Jahn- Teller effect magnetic domains
- in layered manganese oxides. 183 - in diluted magnetic semiconductors. 26. 58
- in manganites (perovskite), 175 magnetic impurities in a nonmagnetic superconductor.
Joule magnetostnction, 93 286
- derivation. expressions. 96 magnetic order
- in manganites (perovskite), 178 - in ErNi2B2C and TmNi2B2C. 276
- in RT2B2C compounds. 243
Kerr effect magnetic ordering temperature
- in diluted magnetic semiconductors. 78 - of RT2B2C compounds. 220
k . P Hamiltonian magnetic ordering temperatures TN
- in diluted magnetic semiconductors. 46 - of RI'2B2C compounds. 219
k . P interactions magnetic pair-breaking effects
- in diluted magnetic semiconductors. 57
- for (Y.R)pd2B2C. 287
k . P Luttinger matrix magnetic phase diagrams
- of HoNi2B2C. 261
magnetic polarons
lattice constants
- in manganites (perovskite), 178
- of diluted magnetic semiconductors. 7. 9. 12. 15. 17
magnetic pressure. 99
lattice constants a and c
magnetic properties
- of RNi2B2C. 246
- of diluted magnetic semiconductors. 21
lattice distortions
magnetic stiffness
- in RT2B2C compounds. 221
lattice properties
magnetic structure of GdCU2. 346
magnetic structures
layered manganese oxides. 182
linear combination of atomic orbitals (LCAO) - in the ground state of RNi282C compounds. 244
- in diluted magnetic semiconductors. 42 - of HoNi2B2C, 260
local lattice configuration - of NdNi282C and SmNi2B2C. 252
- of diluted magnetic semiconductors. 17 magnetic susceptibility for various CeT2B2C com-
local-spin density approximation (LSDA) pounds. 247
- in diluted magnetic semiconductors. 42. 43 magnetic-anisotropy oscillations in ultrathin films. 114
London penetration depth for YNi2B2C. 274 magneto-optic Kerr effect
low-temperature annealing - in thin anisotropic films. 109
- of diluted magnetic semiconductors. 9. 10 magnetoelastic coefficient. 113
lower critical field at T = 0 - in (Tb.Fe)/(Fe.Co) multilayers, 142
- ofYNi2B2C and LuNi2B2C. 240 - in (Tb,Fe)/Fe multilayers, 143
LuNi2B2C-type structure. 218 - in a-Tbtfe.Co), 122, 127
Luttinger-Kohn 6 x 6 Hamiltonian - R/[ YlLu I superlattices, 159
- in diluted magnetic semiconductors. 69 magnetoelastic coupling
- derivation. expressions. 96, 97, 99, 107. 108
Mossbauer spectra - second order (parameters). 105
- in nanocrystalline alloys. 170 - strain (stress) dependence. 113
- in terfecohan, 126 magnetoelastic effects
- in terfecohan/(Y.Fe) multilayers, 150 - in Gd compounds. 311
magnetic anisotropy - in RT2B2C compounds. 221
408 SUBJECf INDEX
magnetoelastic interactions, 312 - of a FelThFeCoIFe sandwich. 167

magnetoresislance - of a-fIb.Co), 121
- in trilayer structures of diluted magnetic semiconduc- - of Sm(Fe,Co), 122
tors, 65 - of terfecohan/(Fe,Co) multilayers, 149
- of diluted magnetic semiconductors, 13, 15, 27, 32, - of terfecohan/(Y,Fe) multilayers, 149
38 - optimalisation, optimal value, 149
- of RT2B2C compounds, 261 magnetostructural transition, 336, 339
magnetoresislance (MR) sensors, 4 magnetotransport properties
magnetoresislance - of diluted magnetic semiconductors. 27
- of YNi2B2C and LuNi2B2C, 234 magnetovolume effect
magnetoresistivity - in cubic systems, 315
-ofHoNi2B2C,263 - in gadolinium, 322
magnetostriction, 120,314 - in hexagonal systems, 320
- (Th,Co)/(Nd,Co)/(Th,Co) sandwich system, 163 - in monoclinic systems, 354
- crystalline-fraction dependence, 169 - in orthorhombic systems, 336
- in (Co,Fe)-AI-O granular systems, 173 - in tetragonal systems, 329
- in (Co,Pd)/Ag multilayers, 155 MBE, 6, 13, 19
- in (Fe,Co)/Au multilayers, 156
- of diluted magnetic semiconductors, 13, 14
- in (Sm,Fe,B) thin films, 143 MBE-grown (Ga,Mn)N films, 14
- in (Sm,Fe,B)/(Th,Fe,B) multilayers, 156
MCD,41
- in (Tb.Fe) thin films, 142
mean field approximation (MFA)
- in (Th,Fe)/(Fe,Co) multilayers, 147
- in (Th,Fe)/Fe multilayers, 142, 143
mean free path
- in a-(Sm,Fe), 120
- of YNi2B2C and LuNi2B2C, 240
- in a-(Sm,Th)Fe-B, 120
mean-field theory
- in a-(Th,Co), 120
- in a-(Th,Dy)(Fe,Co), 128
mean-field Zener model, 50, 60
- in a-(Th,Dy)Fe, 122, 130
- in diluted magnetic semiconductors, 50, 55, 59, 60,
- in a-(Th,Fe) thin films, 117
75, 77
- in a-Th(Fe,Co), 127
MEMS
- in applications (devices, MEMS), 186
- in applications (devices. MEMS), 94, 186, 188, 190
- in cobaltates (perovskite), 184
- optimalisation, optimal value, 149
- in low fields, 118
metal-insulator transition (MIT), 4, 41, 49. 56, 60
- in nanocrystalline «Th,Dy),Fe), 135
- in nanocrystalline «Th.Dy).Mo)Fe2. 138 - in diluted magnetic semiconductors, 15,22,29,49
- in nanocrystalline «Th,Dy),Zr )Fe2' 138 metal-organic vapor-phase epitaxy (MOVPE)
- in nanocrystalline (Th,Dy)(Fe,Nb), 119 - of diluted magnetic semiconductors, 10
- in nanocrystalline alloys, 168 metamagnetic transitions
- in nanocrystalline terfenol-D, 134 - in RT2B2C compounds, 261
- in ThDyFe + ZrlNb multilayers, 139 microscopic theory of magnetoelastic effects, 312
- in terfecohan, 130 migration-enhanced epitaxy (MEE)
- magnetisation or field dependence, 128 - of diluted magnetic semiconductors, 9
- of a (Th,Co)/(Nd,Co)/(Th,Co) sandwich system, 163 modified Brillouin function
- optimalisation, optimal value, 130 - in diluted magnetic semiconductors, 35
- principal modes, 100 MOKE
magnetostriction in high TC-superconductors. 353 - experimental methods, 109
magnetostrictive spring magnet type multi layers, 140 - in FeB/CulFeB sandwiches. 109
magnetostrictive susceptibility, 121, 128, 132, 191 molecular beam epitaxy (MBE)
- of (Th,Fe)(Fe,Co) multilayers, 94 - of diluted magnetic semiconductors, 5, 6
- of (Th,Fe)/(Fe,Co) multilayers, 148 molecular-field approximations
- of (Th,Fe)/(Fe,Co,B.Si) multilayers, 149, 167 - in diluted magnetic semiconductors, 42, 51
- of (Th,Fe,Co)IFe multilayers, 158 Monte-Carlo studies
- of a (Nd.Co)/(Th,Co)/(Nd,Co) sandwich system, 163 - of diluted magnetic semiconductors, 61
- of a (Th,Co)/(Nd,Co)/(Th,Co) sandwich system, 163 MR, 12,32,65
SUBJECT INDEX 409
MSMM, 140 reentrant and near-reentrant behaviour

- in (Tb,Fe)/(Fe.Co) rnultilayers, 144 - of HoNi2B2C. 263
- in applications (devices. MEMS). 150. 189. 191 reentrant behaviour
- in terfenol-DlFiniment multi layers. 145 - in HoNi282C. 264
multi-band superconductors. 233 reentrant superconductivity
multilayer structures - in Ndo.35'Tho.65Ru2. 210
- in diluted magnetic semiconductors. 61 reflection high energy electron diffraction (RHEED), 7
- of diluted magnetic semiconductors. 7, 8
nanocrystallisation, 168
reorientation transition of the hexagonal vortex lattice.
Nb spacer layers. 139
274
nesting vectors. 229
residual resistance ratio p(300 K)/ peT ~ Te)
non-local corrections to H c2. 231
nonmagnetic contribution to the thermal expansion, - of YNi282C and LuNi282C. 240
resistivity
312
normal state Sommerfeld constant - ofYNi282C. 227
- ofYNi2B2C and LuNi2B2C. 240 resonant tunneling diode
optical conductivity resonant tunneling diode structures
- of diluted magnetic semiconductors. 37 - of diluted magnetic semiconductors. 68
optical spectroscopy resonant tunneling diodes (lITDs)
- of diluted magnetic semiconductors. 19 - of diluted magnetic semiconductors. 67
orthorhombic distortion RHEED patterns
- of tetragonal HoNi2B2C. 222 - of diluted magnetic semiconductors. II
rhombohedral distortion
p-d exchange. 55
- in YNi2B2C and LuNi2B2C. 274
- in diluted magnetic semiconductors. 20. 21, 52. 69
RKKY function
p-d hybridization
- in diluted magnetic semiconductors. 42. 44. 47. 75
RKKY interaction
p-d interaction
pair breaking RKKYmodel
- in (Y.Dy)Ni2B2C and (Lu.Dy)Ni2B2C. 288 - in diluted magnetic semiconductors. 52. 60
penetration depth at T = 0 RNi2B2C superconductors, 202
- of YNi2B2C and LuNi2B2C, 240 RTD.68
perovskites, 174 Ruderman-Kittel-Kasuya--Yosida (RKKY) mecha-
photo-induced ferromagnetism nism
- in (In.Mn)AslGaSb. 72 - in diluted magnetic semiconductors. 48
photoemission Ruderman-Kittel-Kasuya--Yosida oscillations
- in diluted magnetic semiconductors. 21. 31.44.46 - in diluted magnetic semiconductors. 44
photoemission spectroscopy
- of diluted magnetic semiconductors. 13 SAMR
photoluminescence (PL). 20 - experimental methods. 108
- of diluted magnetic semiconductors. 10. 19. 38, 78 sandwich system. 163
positive curvature of H c2 (T), 233 - (Nd.Co)/(Tb.Co)/(Nd,Co) sandwich system. 163
- (Tb.Co)/(Nd.Co)/(Tb,Co) sandwich system. 163
quadrupole splitting
- FelTbFeCoIFe sandwich, 167
- in various RNiBC and RNi2B2C compounds. 243
quantum dots (QDs). 10, 17 scanning Hall microscope
- of diluted magnetic semiconductors, 17 - of diluted magnetic semiconductors. 26
quantum well states in ultrathin films, 114 scanning tunneling microscopy (STM)
quasiparticle energy gap at T = 0 - of diluted magnetic semiconductors. 7, 18
-ofYNi282C and LuNi282C, 240 secondary electron spin-polarisation spectroscopy
(SESPS).112
Raman scattering - experimental methods. 112
- of diluted magnetic semiconductors. 20 small-angle magnetisation rotation. 108
410 SUBJECT INDEX
SMFMR,III - in Hoj RI_xNi2B2C, 289

- in ColAg multilayers, 154 - ofRT2B2C compounds, 219, 220
- in nanocrystalline alloys, 171 - of YNi2B2C and LuNi2B2C, 240
- in Ni/[TilAg/Pb] multilayers, 154 superconductivity and itinerant-electron magnetism,
Sommerfeld constant 213
- in YxLUI_xNi2B2C, 282 superconductivity
specific heat jump at T c - in R(Ni,ThB2C and (R, R')Ni2B2C, 277
- of YNi2B2C and LuNi2B2C, 240 superconductors with magnetic impurities, 208
sperimagnetism, 116 superexchange
- in a (Th,Co)/(Nd,Co)/(Tb,Co) sandwich system, 163 - in diluted magnetic semiconductors, 24, 47
- in a-(Th,Co), 120, 122 suppression of the upper critical field H c2(0)
- in a-(Th,Dy)(Fe,Co), 123 - in YxLul_xNi2B2C and Y(Nil_xPtxhB2C, 283
- in amorphous (R,T) alloys, 123 surface anisotropy, 93, lOS, 113, 152
speromagnetism of (Y,Fe), 116 surface magnetisation, 112, 152
spin coherence - of C076Cr4B20, 113
- in diluted magnetic semiconductors, 75 -of Fen Cr6 B 17, 113
spin valve, 110 surface magnetoelastic coefficient, 113
spin-orbit coupling, 96 surface magnetoslriction, 105, lSI, 159
- in amorphous (R,T) alloys, 116 - derivation, expressions, 152
- in diluted magnetic semiconductors, 27,49,52, 57, - in a-(Tb,Fe) thin films, 155
75 - in HoILu superlattices, 159
- in manganites (perovskite), 175,184 - in nanocrystalline alloys, 172
spin-orbit interaction - in NilAg multilayers, 154
- in diluted magnetic semiconductors, 46, 53, 56 - in ultrathin films, 173
spin-density waves -thickness dependence, 152
surface morphology
spin-dependent scattering
- of diluted magnetic semiconductors, 9, 14
- in lrilayer structures of diluted magnetic semiconduc-
symmetry transformations, 98
tors, 64
spin-disorder scattering
TEM in diluted magnetic semiconductors, 10
- in diluted magnetic semiconductors, 27,47,60
temperature-pressure phase diagram of UGe2, 214
spin-injection
TerCoNeel, 94
terfecohan, 94, 142,148,149
spin-injection in ferromagnetic semiconductor het-
terfeconeel, 94
erostructures, 70
spintronics, 4 terfenol, 94
terfenol-D,94, 123
spontaneous distortions of the crystal symmetry, 319 - in applications (devices, MEMS), 185
spontaneous magnetoslriction in non-cubic systems, - in composites, 173
356 thermal conductivity
spring magnets, 140 - of LuNi2B2C, 239
spring-magnet type multilayer, 141 - of RT2B2C compounds, 238
square vortex lattices thermal expansion
- in YNi2B2C and LuNi2B2C, 272 - of gadolinium, 320
SQUID, 23 - of GdCu, 343
Stevens factor, 114 - of Gd2Cu21n, 333
- in a-(Sm,Fe), 119 - of Gd2In, 325
strain dependence of the Heisenberg interaction, 314 - of Gd2 Ni I.7SIn, 334
strain modulated ferromagnetic resonance, III - of Gd3Ni, 353
structural and magnetic properties - of Gd3Rh, 354
- of RC02B2 and RC02B2C phases, 221 -ofGdAg2,331
of RNi2B2C compounds, 218 -ofGdAu2,332
superconducting properties of RNi2B2C, 241 -ofGdCu2,346
superconducting transition temperature - of GdCuAI, 327
SUBJECT INDEX 411
- of GdCuSn. 328, 329 virtual crystal approximation

- of GdNi, 341 - in diluted magnetic semiconductors, 47, 60
- of GdNizBzC, 336 virtual-crystal model
- of GdNi5, 323 - in diluted magnetic semiconductors, 51
- of GdPt, 344 volume dilatation, 98
-ofGdZnz,351 volume magnetostriction, 93
thennodynamical critical field at T = 0 - derivation, expressions, 96
- of YNiZBZC and LuNizBzC, 240 - in cobaltates (perovskite), 184
total and partial density of states - in manganites (perovskite), 175
- for YNiZBzC, 228 - in ultrathin films, 173
transmission electron microscopy (TEM) vortex glass phase, 276
- of diluted magnetic semiconductors, 9 vortex lattice
transverse susceptibility, 109 - in ErNizBzC and TmNizBzC, 276
tunnel magnetoresistance vortex lattice phase, 276
- in trilayer structures of diluted magnetic semiconduc- vortex lattices
tors, 64 - in RNizBZC superconductors. 272
tunneling magnetoresistance (TMR) vortex liquid. 276
- in diluted magnetic semiconductors, 66 vortex pinning
- in trilayer structures of diluted magnetic semiconduc- - in ErNizBzC and HoNiZBZC, 277
tors, 64
two fluids model
x-ray absorption spectroscopy (XAS)
- in diluted magnetic semiconductors, 49, 51
type of the ground state of RNizBzC compounds, 242
x-ray diffraction. 7. 62
type-II superconductors, 230
x-ray diffraction curves
upper critical field H cZ
x-ray diffraction rocking curve
- for TmNizBzC and ErNizBzC, 268
- of (Ga.Mn)AslGaAs superlattices, 62
upper critical field Hcz(T), 230
upper critical field at T = 0 x-ray magnetic circular dichroism (XMCD)
- ofYNizBzC and LuNiZBzC, 240 - in diluted magnetic semiconductors. 20.41,44
upper critical field. H cz(T) x-ray photoemission spectra (XPS)
of YNizBzC and ThO.I YO.9NizBzC and - of diluted magnetic semiconductors, 46
Tbo.z Yo.gNiz BzC, 288 XMCD results
Van-Vleck type paramagnetism
- in diluted magnetic semiconductors, 12 Zener approach
Vegard's law, 16 - in diluted magnetic semiconductors. 48
Verdet constant Zener model
- of diluted magnetic semiconductors, 39 - in diluted magnetic semiconductors, 50. 56. 57, 60
Villari effect. 103 Zhang-Rice states
- experimental methods, 108, 109, III - in diluted magnetic semiconductors. 42. 60
Materials Index
a-DYI_x Fex,1I9 c-ThCoz,1I5

amorphous Fe<JI_xZr7BxCuz. 171 c-Th(Fel_xCoxh.126
amorphous Fe93-xZr7Bx. 171
a-(SmFeZ)99.Z6BO.74. 120 DyBZC z,225
a-(Th.DY)O.4ZFeO.5S. 122 Dy/Lu,159
a-Tht_xCox.120 DyMZSiz,243
a-(Th I-x Dy r )( Fe 0.45COO.55 h.t. 128 DyNi2B2C. 218. 220. 222, 226, 242, 257. 258, 265.
a-TbCoz, 115 287,288
a-Tb-Fe, 120 DyNiBC,223
a-Th-(Fe,Co), 141 DyPtzBzC,220
a-Th(Feo.45C00.55)Z.I, 127 DyRhz BzC, 220
a-Tb(Feo.55 C00.45) 1.5, 126 DylY.159
a-ThFez. 115. 126
(Er32/Lu 10140 superlattice, 162
B,204 ErNizBzC, 217. 218. 220, 222. 242, 245, 246, 266-
269,276.277,287,290
BEDT-TTF, 206
ErNiBC.223
BEDT-TIF-based sail. 204
ErPdzSn.213
ErRhzB zC.220
C6Q,203, 204,206. 290
ErRh4B4, 205. 211
C6Q/CHBr3. 204
ErN, 159
CaMnl_xRux03 perovskites, 179
EuO.4
(Cd.Mn)Te. 5,40. 76
EuSe,4
(Cdt_xMnx)GePz,77, 78
Cdt_xMnxS.6O Fe. 148,208.291
CdCrZS4,4 (Fe,Cu.Nb.Si,B) ribbons. 168
CdCrzSe4,4 (Fe.Nb.B) ribbons. 169
CdGePz, 77, 78 (Fe,Zr,B) ribbons, 168
Ce3Ni2B2N],223 (Fe.Zr,Nb,B) ribbons. 169
CeCozBzC.220 Fe(25 nm)/ThFeCo(5000 nm)IFe(25 nm) sandwich,
CeNizBzC, 220, 242. 246. 247 167
CePt 1.5AuO.5 BzC. 247 Fe73.5CUINb3Si13.5B9, 171
CePt2BzC,220 Fe73.5SiI5.5B7Nb3CUt,l72
CeRhzBzC.220 Fe74.3Nb2.7CUISit5.5B6.5.172
CeRu2. 209. 284 Fe77Cr6B17. 113
CeTZBzC with T = Ni. Co. Rh, Pd, (Pt,Au). 247 Fe84Nb3.5Zr3.5BsCu" 172
(COI_x Fex)-AI-O, 173 FeS5Zr7B6CuZ, 170. 171
C03ZPd6S/Ag multilayers, 156 Fe9QHf7B3. 169
CoIAg multilayers, 155 FeB/CufFeB trilayers, 109
Co doped ZnO. 78 FeCoIAu multilayers, 156
CrAs. 43. 78
CrSb.78 (Ga.Cr,Mn)As, 13
c-Tht_xCox.122 (Ga.Cr)As, 13
413
414 MATERIALS INDEX
(Ga,Cr)N. 14 GdCu (FeB). 356

(Ga,Cr)Sb. 14. 15 GdCuSn. 327, 356
(Ga,Fe.Mn)As, 12 Gd/Fe multilayers, 155
(Ga,Fe)As.12 Gdln3. 317. 357
(Ga.Fe)N. 14 GdMo6SS. 211, 212
(Ga,Mn)As. 5-10. 12. 13. 15-26. 30-34. 36-41. 45- GdNi. 339. 356
50.52.61-71.73,75.77 GdNi0.4CUO.6.357
(Ga.Mn)As:Sn. 24 GdNio.7CuO.3.357
(Ga,Mn)N. 13. 14.43.77 GdNil_xCux.341
(Ga,Mn)P:C.14 GdNi2. 317, 357
(Ga,Mn)Sb, 14. 15.71 GdNi2B2C. 220.242,246.254-256
Gao.75Feo.25 N,43 GdNi2B2C, 334, 357
Gao.7SMno.2S N• 43 GdNis. 322. 357
Gao.75Mno.2SNO.7S00.2S.43 GdNiAI. 324. 357
Gao.93S Mno.063 As. 45 GdNiBC, 223
Gao.947Mno.OS3As. 23, 27. 55 GdPd2ln. 318. 357
Gao.9S7 Mno.043 As. 59 GdPt. 342, 356
Gao.9SMno.osAs. 56. 58 GdRh2B2C.220
(Gao.9SMno.os)As. 65. 66 GdSb,319
(Gao.962MnO.03S)As.26 oa,y l-xNi2B2c' 286
Gao.96S Mno.03S As. 58 GdZn.319
(Gao.96SMnO.03S)As. 22, 68 GdZn2, 350, 356
(Gao.97Mno.03)As. 65. 66
Gao.9Mno.1As. 77 (Hg.Fe)Se, 5
Gal_xMnxAs.7. 17.21-24.29-33.38-40.42--44.46.
(Ho,La)Ni2B2C.289
50.55-58,65.67
HOI_xRxNi2B2C compounds with R = Y or Lu, 262
Gal_xMnxN.43
H02Ni3B6. 226. 263
oa, 320. 356
{H031ILu19150 superlattices, 159
(Gd.La)Ru2. 209
{Ho61Y6ItOO.159
Gdo.sSro.sMn03.177
HoB2C2, 225. 263
Gd1.2Mo6SS.212
(GdI23).212 HoC02B2C, 220
HoILu, 159
Gd2Cu2ln. 331. 356
Gd2ln. 323. 357 HoMo6SS' 211
Gd2Ni2_xln. 331, 356 HoNi2B2C. 217. 220. 222. 223. 242-245. 259-261.
Gd3Ni. 352. 356 263-267.277.287.288.290
Gd3Rh. 352. 356 HoNi4B.225
Gds(Sio.1 GeO.9)4.356 {HolIlLu IS}SO superlattices, 162
GdS(SixGel_x )4. 336 HoPd2B2C,225
GdAg2. 329. 356 HoRh2B2C, 220
GdAI2.316.319.357 HolY, 159
GdAs.319
GdAu2. 329. 357 (In.Ga.Mn)As. 10
GdBa2Cu307,212 (In,Mn)As. 5, 6, 10-12, 15, 17, 19.21, 31, 34. 3(r38.
GdBa2Cu307_8.353 40,66,72-74
GdBi.319 (lno.9sMnO.os)(Aso.2Sbo.g), 73
GdC02B2.219 (lno.9sMno.os)(Aso.gSbO.2).73
GdCo2B2C. 219. 220 Inl_xMnxAs, 17,35.43.56.57
GdCu,342 InSb:Mn,15
Gd( Cuo.sNio.2h.356
Gd(CU1_xNixh.351 (La,Sr)Mn03,4
GdCU2. 344.356 (La,Th) NiC2,204
GdCu2ln, 318, 357 Lao.60Y0.07Cao.33Mn03' 175
GdCuAI, 324. 356 Lao.62Tbo.OSCao.3S Mn03. 176
MATERIALS INDEX 415
(Lal_xSmxhI3SrI/3MnOJ (x =0.33),178 NdPt2B2C,220

Lal_xSrxCoOJ, 184 NdRh2B2C, 220
LaI_xSrxMnOJ, 178, 179 Ni2B,226
La2_2xSrl+2xMn207, 182, 184 NiJB,226
La2C3,204 NiJC,226
LaJ Ni2B2N3,223 Ni/Ag multilayers, 154
LaB6,204 NiIPb,154
LaBrC,204 NilTi, 154
LaIr2B2C,220
LaNi2B2C,220,227,229,250,251,289 (Pb,Sn,Mn)Te, 5
LaNiBN,223 (Pr 123), 212, 213
LaNiC2,204 PrBa2CuJ07-y,252
LaPd2B2C,220 PrNi2B2C, 220, 242, 247-251, 290
LaPt2B2C,220 PrPt2B2C, 220
LaRh2B2C.220 PrRh2B2C,220
(LaSr)Cu04,231 Pr2/JCal/3MnOJ, 176
La2/JCal/JMnOJ, 176
La2/JSqI3MnOJ,178 (RI23),211
(Lu,Dy)Ni2B2C,288 R2CJ,226
(Lu,Y) I-x YbxNi2B2C, 271 R2NiJ B6,226
LuO.I 5HOO.S5Ni2B2C, 266 RB12,226
LU2NiBC2,223 RB2,226
LuB2C2, 204, 207, 225 RbJC6Q, 204, 206
LUC02B2C, 220 RB4,226
Lu(Nil_xCoxhB2C, 275 RB6,226
LuNi2B2C, 202-204, 217, 219, 220, 226, 227, 229-
RBa2CuJ07-~, 211
241,250,261,270,273-276,280,283,284,286,
(RC)n Ni2B2,224
289
R(Co,Mn)OJ,I84
LuNiBC,223
ReJB,204
LuOSJB2,204
ReB2,204
LuRh4B4' 205
RMo6SS,211
LuRuB2,204
R(Ni,Cu)BC, 223
R(Ni,ThB2C compounds (T = Co, Cu, Pd, 1'1), 277
MgB2,204, 207,285, 290
RNi2B2C, 202
MgNi3C,205
MnAs, 7, 9, 10, 17, 18,22,29,42,43,62,63,75,77, RNi2C2,226
79 RNiBC, 223
Mn doped InSb, 15 RNiC2,225
M02B,204 RReBC,223
M02BC,204 RRh4B4,211
M02C,204 RuSr2(Gd,CehCu20 IQ, 290
MOJA12C, 205 RuSr2GdCu20S,290
M056C44, 204 RuSr2(R,Ceh CU20IQ,213
RuSr2RCu20g,213
Nb,239
NbB,204 ScNi2B2C, 204, 216, 219, 220, 226
NbCy,204 (Sm,Fe,B), 142
(Nd,Th)Ru2,209 (Sm,Th)Fer B,120
Ndo.J5Tho.65 Ru2,209 Srno.J7COO.6J, 121
Ndo.45 Srno.55 MnOJ,176 Sm0.55SrO.45Mn03,179
(Ndo.6Tho.4h/JSrI/3MnOJ, 176 Sml_xCaxMnOJ, 179
(Ndl_ySmylo.5Sr0.5MnOJ,178 Sml_xNdxFe2/Fe composites, 173
Nd~~onNd~o, 163 Sm-Co,122
NdNi2B2C, 220, 242, 252-254 Sm-Fe,119
416 MATERIALS INDEX
(SmFe2)100-x B x • 120 terfecohan/(Y0.2Feo.s) multilayers, 149

SmFe2/Fe. 173 terfeconeel, 94
SmFeBffbFeB multilayers, 156 terfenol-D, 122. 132. 135. 173
SmNi2B2C. 220. 242. 252-254 ThNi2B2C. 204. 219. 220
SmRh2B2C.220 ThPd2B2C.220.225
Sm(TblsFeS2)/(Fe75Co25). 143 Th-Pd-B-C. 225
ThPt2B2C, 220
TaB. 204 ThRh2B2C.220
(Th.DY)I_xFe2Zrx.137 TmNi2B2c' 220
Tho. IYO.9Ni2B2C. 288 TmNi2B2C. 217.242.262.268.269.276
(Tho.27DYO.73)0.42Feo5S. 130
(Th0.27DYo.73)(Fel-xCoxh.124 UGe2. 214. 290
<Tbo.27DYo.73)Fe2.128 UNi2B2C.220
TbO.27DYO.73Fe2 single crystal. 94 UPt3. 239. 284
TbO.2YO.SNi2B2C.288 URh2B2C.220
TbO.32CoO.6S. 127 URhGe. 214. 215
TbO.36COO.64. 121
ThO.36(Feo.5COO5 )0.64. 127 VAs. 43
(ThO.3DYO.7)0 33Feo.67. 136
(ThO.3DYo.7)I-xFex.135
(Y.Dy)Ni2B2C.288
(Th0.3 DYO.7)40(Feo.95 NbO.05)6Q.119
(Y.ThhC3. 204
Tho.4(Feo.55COO.45 )0.6. 131
YO.15Hoo.S5Ni2B2C. 265. 266
ThO.6DYo.4Znl.191
YI_xFex.116
ThI_x(Fe.Coh.118
Y l-xPrxNi2B2C. 252
Thl-xFex. 116
Y2 C3. 226
(Th33 Fe67)/(FeSOB20) multilayer. 143
Y2NiBC2.223
(Th40Fe60)/(Fe50Co50) multilayer, 147. 151
Y3Ni4B4C3.224
Th-Co.122
YB 12.204.226
ThCoIFeCo. 94
Th-CoINd-Coffb-Co. 163 YB2C2. 204. 207. 225
ThDyFe.1I9 YB6. 204. 226
ThDyFe + ZrINb muhilayers, 139 YBa2Cu307.284
(TbDyFe)/(FeSiCuNbB), 143 YbNi2B2c' 220. 242. 249. 251. 270, 271. 290
ThDyFelFinemet multilayers, 145 YbNiBC. 223. 249
Tb-Fe. 117. 122 Y(Br,IlC.204
Th(Fe.Co)l.5. 132 YC2.204
Th(Fe055 C00.45) 1.5. 142 YCo2B2C.220
Tb(FeO.55C00.45)1.5(7.5 nm)/Fe(5 nm) multilayer. 142 YIC.204
ThFe2.117 Y(Ni.PthB2C.283
(ThFe2)I_xBx.117 Y( NiO.75 Pto.25h B2C. 285
ThFeCoIFe multi layers. 157 Y(Nil_xCoxhB2C.278
TbFelFe.94.141-143 Y(Ni I-x Ptx hB2C. 283. 284
ThFelFeCo. 141. 144 YNi2B2C.220
TbFelFeCoBSi. 166 YNi2B2C. 202-204. 216. 226. 227. 229. 230. 232-
ThFelFeCoBSi multilayers, 142. 149 238.240.241,261.273-276.280.283-289
ThFelFeCo multilayer. 142 YNi2B2C.250
ThFelpolyimidelSmFe. 119 YNi4B.202
ThNi2B2C. 220. 222. 242. 246. 250. 256. 257. 266 YNi4BCo.2.202
ThNiBC.223 YNiBC.223
ThRh2B2C.220 YOS3B2,204
Th x YI_xNi2B2C, 287 YPd2B2c' 202. 204. 220
terfecohan, 131 YPd5B3CO.35.202
terfecohan/(Feo.5 COO.5) multi layers. 148 YPt2B2C.204
terfecohanlFe multilayer. 149 YRh4B4.205
MATERIALS INDEX 417
YRU2B2C.220 (Zn.Co)S.5
YRu2B2C.204 (Zn.Mn)Se. 26
YRuB2.204 ZrBI2,204
YxLUI_xNi2B2C, 280-282 ZrZn2.213, 214,290

K.H.J. Buschow Ph.D. Ferromagnetic Materials A Handbook On The Properties of Magnetically Ordered Substances

Uploaded by

Document Information

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

K.H.J. Buschow Ph.D. Ferromagnetic Materials A Handbook On The Properties of Magnetically Ordered Substances

Uploaded by

Copyright:

Available Formats

HANDBOOK of MAGNETIC

P.O. Box 211,1000 AE Amsterdam, The Netherlands

© 2002 Elsevier Science B.Y. All rights reserved.

Electronic Storage or Usage

First edition 2002

Working together to grow

Transferred to digital printing 2008

The Handbook series Magnetic Materials is a continuation of the Handbook series

superconducting condensation energy. Therefore the investigation of these compounds

Contents of Volumes 1-13 xi

1. III-V Ferromagnetic Semiconductors

Author Index 363

Subject Index 405

Materials Index 413

4. Intermetallic Compounds of Actmides. by V. Sechmsky and L Havela 309

Material chroniony prawem autorskim

III-V FERROMAGNETIC SEMICONDUCTORS

Institute of Physics, Polish Academy of Sciences

Handbook of Magnetic Materials, Vol. 14

8.6. Limitations and refinements of the mean-field Zener model .. 59

Fig. I. Concept of spin-electronics (spintronics). In semiconductor spin-electronics spin properties as well as

2. Preparation of 111-V magnetic semiconductors by molecular beam epitaxy

In order to observe magnetic cooperative phenomena in diluted magnetic systems. one

2.2. (In.Mn)As grown on GaAs

400 Growth Inhibited

2.3. (In,Mn)As grown on (Al,Ga)Sb

p-lnMnAs on (AI,Ga)Sb I GaAs(001

2.4. Other III-V magnetic semiconductors

• (Ga,Cr)As: (Ga,Cr)As layers with Cr compositions up to 0.1 were grown by LT-MBE at

if Ts = 250°C. Magnetotransport measurements determine the properties of (Ga,Mn)Sb

3.1. Lattice constants

0.61 r--.....- ......--,........ ..,.-.-oIIIIIIr--.,

3.2. Local lattice configuration (EXAFS)

3.3. Atomic-scale observations by scanning tunneling microscopy (STM)

Cross-sectional scanning tunneling microscopy (XSTM) measurements were carried out

4. Spin and charge states of Mn in 111-V magnetic semiconductors

4.1. Electron spin resonance (ESR)

4.2. Optical spectroscopy

magnetic fields up to 30 T were identified as radiative recombination of the hole bound to

4.3. X-ray magnetic circular dichroism (XMCD)

Figure 9 shows magnetization curves at several temperatures of a ISO-nm thick

0.10 _ - - _ - - . . - - - _ - - " ' "

~ 0.05 #j:.-..,_·' i}_·' i}_·~;;:' cM·

0.000 100 200 3~0

The Curie constant C = g2J1.~xNoS(S + 1)/3kBT, determined from l/X-T curve

5.2. Magnetic anisotropy

--; 0.031====+=+~..-.oll-- ....+-.....-t

5.3. Magnetic domains

5.4. Cantilever magnetometry

( ij 0.00 . ,..........................'1'-: . '05'" •• , •••.•:: .••••••••••

8.00 0.04 0.08

6.1.2. Temperature and magnetic field dependence of resistivity

1 200-nm (Ga,Mn)As / (AI,Ga)As

x = 0.053 'J exp

.-. ~- ., ... '''; ....."".,..

-0.2 L L . _...._ ...... _ ~ _ ................- - '

Measurement of RHall at 50 mK in the field range of 22-27 T on the sample with

6.2.2. p-type (/n,Mn)As

0.015.... -...--,....""1"""".....- . . . - - , , - -_ _... 6

6.2.3. Pseudomorphic p-type (In,Mn)As

6.3. Infrared and far infrared optical conductivity

6.4. Cyclotron resonance

Magneto-optical properties of (In,Mn)As and (Ga,Mn)As have been studied in order to