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With the probes centered on a very wide (lateral dimension d >> s ) and very thin
( thickness t << s) sample, with s the probe spacing, the resistivity is given by:
π V V
ρ= t = 4.5324 t
ln(2) I I
For a sample of finite width and non-negligible thickness this should be multiplied by
correction factors f1 and f2 :
π V V
ρ= t f1f 2 = 4.5324 t f1f 2
ln(2) I I
where
f1 = f1 (t/s)= finite thickness correction :
f1 = f11 (t/s) = for an insulating
bottom boundary
ln(2)
f11 =
sinh(t / s)
ln
sinh(t / 2s)
f11 ≈ 1 π V V
for t<<s, and ρ≈ t f 2 = 4.5324 t f 2
ln 2 I I
2
f12 ≈ 8 ln(2) s2 8π s V
2
and ρ≈ f2
3 t 3 t I
f11 = f12 ≈ 2 ln(2) s V
for t>>s, and ρ ≈ 2π s f 2
t I
f2 = finite width correction :
Original references:
A. Uhlir Jr., The Bell System Technical Journal 34, 105 (1955)
F.M.Smits, The Bell System Technical Journal 37, 711-718 (1958)
More easily accessible reference:
D.K. Schroeder, Semiconductor Material and Device Characterization, Wiley 1990.
1
0 .1 1 10
10 10
9 .5 9 .5
9 9
8 .5 8 .5
8 8
7 .5 7 .5
7 7
6 .5 6 .5
6 6
5 .5 5 .5
5 5
4 .5 4 .5
4 4
3 .5 3 .5
3 3
2 ln(2) s/t
2 .5 2 .5
2
f12 2
1 .5 1 .5
f1
1 1
0 .95 0 .95
0 .9 0 .9
0 .85 0 .85
0 .8 0 .8
0 .75 0 .75
0 .7 0 .7
0 .65 0 .65
0 .6 0 .6
0 .55 f1 1 0 .55
0 .5 0 .5
0 .45 0 .45
0 .4 0 .4
0 .35 0 .35
0 .3 0 .3
0 .25 0 .25
2 2
8 ln(2) s / 3 t
0 .2 0 .2
0 .15 0 .15
0 .1 0 .1
0 .1 1 10
t/s (thickn ess/probe sp acing)
2
0 5 10 15 20 25 30 35 40
1.00 1.00
0.95 0.95
0.90 0.90
0.85 0.85
0.80 0.80
0.75 0.75
0.70 0.70
0.65 0.65
0.60 0.60
f2
circle d iam e te r d
0.55 0.55
sq ua re side d
re ctan g le w id th d , le n gth 2d
0.50 0.50
re ctan g le w id th d , le n gth 3d
re cta n gle w idth d, le ng th >4 d
0.45 0.45
0.40 0.40
0.35 0.35
0.30 0.30
0 5 10 15 20 25 30 35 40
d/s (diam eter or w idth/probe spacing)