ESE319 Introduction to Microelectronics

Class AB Output Stage

● Class AB amplifier Operation
● Multisim Simulations - Operation
● Class AB amplifier biasing
● Multisim Simulations - Biasing

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL

1
 ESE319 Introduction to Microelectronics

Class AB Operation

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL

2
 ESE319 Introduction to Microelectronics

Basic Class AB Amplifier Circuit

Bias QN and QP into slight conduction
when vI = 0.
Ideally QN and QP are:
i L =i N −i P 1. Matched (unlikely with discrete
transistors).
2. Operate at same temperature.

NOTE. This is base-voltage biasing with all its stability problems!

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL
3
 ESE319 Introduction to Microelectronics

Class AB Circuit Operation

Output voltage:
for vi = 0 V BB
V BB for v i 0 v o=v i  −v BEN ⇒ v o≈v i
v BEN = −v O 2
2
V BB V BB
v EBP =v O − for v i 0 v o=v i − v EBP ⇒ v o ≈v i
2 2
Base-to base voltage is constant!
v BEN v EBP =V BB
v BEN v EBP V BB
vT VT 2V T
i N =i P i L Using: i N =I S e , i P =I S e & I Q =I S e
Bias:

     
V BB
2VT iN iP IQ
I N =I P =I Q = I S e V T ln V T ln =2 V T ln
v BEN v EBP IS IS IS
vT VT
Also: i N =I S e & i P =I S e
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL
4
 ESE319 Introduction to Microelectronics

Class AB Circuit Operation - cont.

i N =i P i L
V T ln
iN
IS    
V T ln
iP
IS
=2 V T ln
IQ
IS

V T ln
   
iN iP
I 2S
=2V T ln
IQ
IS

V T ln i N i P −V T ln  I 2S =2V T ln  I Q −2 V T ln I S 

ln i N i P =ln  I 2Q 
Constant base voltage condition: i N i P =I Q2

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL

5
 ESE319 Introduction to Microelectronics

Class AB Circuit Operation - cont.

Constant base voltage condition:
i N i P =I Q2

i N =i P i L Kirchhoff's Current Law condition:

i N =i P i L ⇒i P =i N −i L
Combining equations:

vO i N i N −i L =I Q2 or i P i P i L =I 2Q
i L= for vI > 0 V for vI < 0 V
RL
Hence:
2 2
i 2N −i N i L −I Q2 =0 or i P i P i L −I Q =0
for vI > 0 V for vI < 0 V
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL
6
 ESE319 Introduction to Microelectronics

Class AB Circuit Operation - cont.

i L =i N −i P i N i P = I Q2
Observations:
1. Since with constant base voltage VBB: i N i P =I Q2 , if iP increases by
i P =i P 1 i then iN decreases by i N =i N /1i  , and vice-versa.

2. For vO > 0, the load current iL supplied by the complementary emitter

followers QN and QP. As vO increases, iP decreases and for large, positive
vO i.e. i =i −i =i − v O
P N L N hence v O  large⇒ i P  0
RL
3. For vO < 0, the load current iL supplied by the complementary emitter
followers QN and QP. As vO decreases, iN decreases and for large, negative
vO i.e. vO
i N =i P i L =i P  hence −v O −large ⇒i N  0
RL
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL
7
 ESE319 Introduction to Microelectronics

Class AB Circuit Operation - cont.

I 2Q
Write the product equation as: i P = where IQ is typically small.
iN
For example let IQ = 1 mA and iN = 10 mA.

1⋅10−6 1
i P= −3
=0.1 mA= iN
10⋅10 100
The Class AB circuit, over most of its input signal range, operates
as if the QN or QP transistor is conducting and the QP or QN transistor
is cut off.

Using this approximation we see that a class AB amplifier acts much

like a class B amplifier; but without the dead zone.
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL
8
 ESE319 Introduction to Microelectronics

Class AB VTC Plot

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL

9
 ESE319 Introduction to Microelectronics
Amplitude: 20 Vp
Frequency: 1 kHz Class AB VTC Simulation

VCC

VBB/2

RSig VBB/2

RL

-VCC

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL

10
 ESE319 Introduction to Microelectronics

Class AB VTC Simulation - cont.

Amplitude: 2 Vp
Frequency: 1 kHz
V BB
=0.1V
2

V BB
=0.5V
2

V BB
=0.7V
2

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL

11
 ESE319 Introduction to Microelectronics

Class AB Small-Signal Output Resistance

Instantaneous resistance for the
ac ground QN transistor - assume α  1:
CN v BEN
VT
BN di N ISe iN
= =
vI = 0 V EN
<=> dv BEN VT VT
EP For the QP transistor:
BP di P iP
=
dv EBP V T
CP
Hence:
ac ground VT VT
r eN = and r eP =
iN iP
for vI > 0 V: R out ≈r eN
R out =r eN ∥r eP
for vI < 0 V: R out ≈r eP
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL
12
 ESE319 Introduction to Microelectronics

Small-Signal Output Resistance - cont.

The two emitter resistors are in parallel:
V T2
iN iP VT VT
R out =r eN ∣∣r eP = = =
VT VT
iN

iP
iN iP
i N i P
iN iP  i N i P

At iN = iP (the no-signal condition i.e. vO = 0 => iL = 0): i N =i P =I Q

VT
R out =
2 IQ

So, for small signals, a load current flows => no dead-zone!

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL

13
 ESE319 Introduction to Microelectronics

Class AB Amplifier Biasing

A straightforward biasing approach:
IQ
IQ
D1 and D2 are diode-connected
transistors identical to QN and QP,
+ QN respectively.
They form mirrors with the quiescent
VBB
current set by R:
- QP 2V CC −1.4 V CC −0.7
I Q= =
IQ IQ 2R R
or:
V CC −0.7
R=
IQ
Recall: With mirrors, the device temperature for all transistors needs to
be matched!
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL
14
 ESE319 Introduction to Microelectronics

Widlar Current Source

IN = bias current for Class AB amplifier NPN
R
IREF
IO IO = IN
V BE1=V T ln
 
I REF
IS
Q2 = QN

 
VCC
+ +
IO
- VBE1 VBE2- V BE2=V T ln
emitter IS
IO Re
degeneration I REF I S I REF
V BE1−V BE2=V T ln  =V T ln  
IS IO IO
V CC −V BE1 12V −0.7 V
I REF = = =1 mA V BE1 =V BE2I O R e
R 11.3k 
Note: Pages 653-656 in Sedra & Smith Text. I O R e =V T ln
I REF
IO  
Note Re > 0 iff IO < IREF
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL
15
 ESE319 Introduction to Microelectronics

Widlar Current Source - cont.

If IO specified (and IREF chosen by

VCC
R
IREF
IO designer):
Re=
VT
IO
ln
IO 
I REF

Example Let IO = 10 µA & choose IREF = 10 mA,

IO Re determine R and Re:
V CC −V BE1 12 V −0.7 V
R= = =1.13 k 
I O R e =V T ln
 
I REF I REF 10 mA

 
IO VT I REF 0.025V 10 m A
Re= ln = ln 
If Re specified and IREF given: IO IO 10 A 10  A
VT
I O=
Re
 ln  I REF  −ln  I O   .=2500 ln 1000=17.27 k 
Solve for IO graphically. R=1.13 k  R e =17.27 k 
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL
16
 ESE319 Introduction to Microelectronics

Widlar Current Mirror Small-Signal Analysis

.≈.

v x −−v   r  ≫1/ g m
i x =g m v i ro=g m v  
ro
Rout is greatly enhanced by
v  =−r ∥Re i x
adding emitter degeneration.
v x r ∥R e i x vx
i x =−g m r ∥R e i x  − ⇒ R out = = Re∥r  1g m r o 
ro ro ix
g m r o ≫1
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL
17
 ESE319 Introduction to Microelectronics

Class AB Current Biasing Simulation

Bias currents set at IREF and IO by R and emitter resistor(s) Re.
I REF ≈4 mA NPN Widlar current mirror

I O ≈2 mA
IREF ION
R=2.8 kΩ

Re=10 Ω R =100 Ω
iN L

V CC −V BE1
Amplitude: 0 Vp iIiLLL R=
Re=10 Ω I REF
Frequency: 1 kHz

R=2.8 kΩ
IREF IOP Re=
VT
IO
ln
 
I REF
IO
PNP Widlar current mirror
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL
18
 ESE319 Introduction to Microelectronics
Class AB IREF = 4 mA Current Bias Simulation
NPN Widlar current mirror
Amplitude: 0 Vp
4.031m
Frequency: 1 kHz

2.329m

Quiescent Power
Dissipation vI = 0 V:
P Disp =P D−av =76.31 mW 75.53 mW
.=151.84 mW 2.270m
4.025m

PNP Widlar current mirror

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL
19
 ESE319 Introduction to Microelectronics

Class AB 4 mA Current Bias Simulation - cont.

Amplitude: 12 Vp
Frequency: 1 kHz

For linear operation: - 9 V < vO < +9 V

VTC has no dead-zone.
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL
20
 ESE319 Introduction to Microelectronics

Class AB VTC Limits

Linear VTC for vI-max ≤ vI ≥ 0 =>
1. Q2, Q3 forward-active
iREF Q2 ≠ Saturation =>
v CE2=V CC −i N Re −v O ≥ V CE2sat
Q2
where v O =−i N Re v I
Q3 v CE2=V CC −v I ≥ V CE2sat
vO
vI v I ≤ V CC −V CE2sat =v I −max1
Q4 iP

Q1 2. Q3 ≠ Cutoff =>
v BQ3 ≥ v I 0.7V
v BQ3=V CC −i REF R
v I ≤ V CC −i REF R−0.7 V =v I −max2
v I −max =max v I −max1 , v I −max2 
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL
21
 ESE319 Introduction to Microelectronics

Class AB 4 mA Current Bias Simulation - cont.

PD+av V BQ3
3.324m
0.018m
I REFN 309 mW
I ON

PD+av
V BQ3 PL-av

VI NOTE:
2.697m
VO 1. Linear operation up to VI = 9 V:
PDav = 946mW, PLav = 510mW =>
PLav P Lav 510 mW
= = =0.540.785
P Dav 946 mW
PD-av
2. At VI = 10 V: VBEQ3 = VBN – VI = -0.1V
I OP
1.776u NPN Q3 is cutoff for VI ≥ 9.5 V.
4.734m 3. By symmetry PNP Q4 is cutoff
PD-av
for VI ≤ -9.5V .
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL
22
 ESE319 Introduction to Microelectronics

Conclusions
ADVANTAGE:
Class AB operation improves on Class B linearity.

DISADVANTAGES:
1. Emitter resistors absorb output power.
2. Power Conversion Efficiency is less than Class B.
3. Temperature matching will be needed – more so.
if emitter resistors are not used.

TRADEOFFS:
Tradeoffs - involving bias current - between power
efficiency, power dissipation and output signal swing
need to be addressed.
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL
23