Recap
Differene between Linear Electronics
Linear Electronics
The BJT is operated in the lin-
ear zone of the output character-
istics curve as the emphasis is on
the quality of amplification.
due to poor linearity the satura-
tion and cut off zones are avoided
The transistor is biassed to oper-
ate it at the Q point
All three configurations are used
i.e. common base, common col-
lector and common emitter
Utilising the complete transistor
rating is of secondary importance
and Power Electronics.
Power Electronics
All devies are operated in switch-
ing mode- either fully ON or fully
OFF
The device is operated in the sat-
uration and cut off zones as losses
are less in these zones.
there is no concept of Q point.
generally the common emmitter
mode is used with the load con-
nected either on collector or em-
mitter
the transistor rating is selcted
based on utilisation, i.e. rating
matches the requirement
Recap

Study of devices can be undertaken from various view points:

* Physics Viewpoint: Operational and functional features are
explained
* Circuit Viewpoint: Deals with static and dynamic charecteristics
* Protection Viewpoint: Focus on electrical and thermal stresses in
the device. Safe operation limits of the device are addressed.
* Drive Viewpoint: Emphasises and clarifies the switching behaviour
of power devices—enables one to synthesise reliable and meaningful
drive circuits.
* Modelling Viewpoint:
How to model the switch for simulation?
Power topologies can be simulated and circuit behaviour and
waveforms can be determined at various points in the circuit
before actual hardware implementation.
Helps in reducing design cycle time i.e. electronic
breadboarding before hardware breadboarding.
* Packaging Viewpoint: focusses on device mounting strategies,
removal heat through heat sinks, forced cooling and convection
issues.
Recap

Semiconductor devices should behave like switches.

they should emulate a SPST (Single Pole Single Throw)

Features that an ideal switch (SPST) should have:

1 On resistance = 0 (zero forward volatge drop)
2 OFF resistance = infinity (zero reverse current)
3 When Switch is ON – conducts infinite current in fwd and rev
directions
4 When Switch is OFF – switch withstands infinite fwd and
reverse voltage
5 Can switch instantaneously from OFF to ON and ON to OFF.
6 Power dissipated in switches is zero - both conduction and
switch transistion losses are zero.
7 ON to OFF and OFF to ON are fully controllable.
8 No power required for driving and controlling the switch.
Power Diodes

POWER DIODES
Structure

Static characteristics

Dynamic characteristics
Diodes have two terminals — Cathode, Anode
When anode is more positive than cathode current flows from
anode to cathode.
- The diode is said to be forward biassed
- This state is called ON state or Conducting state.

When cathode is more positive than anode, no current flows.

- The diode is said to be reverse biassed
- This state is called OFF state or Blocking state.

Switching of the diode is solely dependent on anode-cathode

potential,
This potential is determined by the external circuit.
There is no control on the switching state and hence a diode
is called an Uncontrolled Switch.
metals – valence electrons are free and roam from atom to
atom.
insulators – no free valence electrons
semiconductors - covalent bond is imposed between valence
electrons of adjacent atoms.
- In a pure semiconductor there are very few valence electrons.
conduction properties of metals and semiconductors are very
different.
* A fraction of voltage applied across a metal induces a large
current flow.
* The same voltage applied across a semiconductor material
causes a small amount of current.
Adding impurities to semiconductors can change their
conductiviy — this process is called doping.
Adding a pentavalent impurity like Arsenic increases mobile
free electron charges — this material is called n–type
Adding a trivalent impurity like Boron increases mobile hole
charges — such a material is called p–type
p side has high density of holes (deficiency of elctrons)
n side has high density of electrons
electrons from ’n’ side diffuse to ’p’ side and holes from ’p’
side diffuse to ’n’ side.
Due to the combination of holes and electrons a region of
immobile charges is created on either side of the junction.
This region is called the depletion region.
a space charge layer is created on either side of the junction
giving rise to an electric field and a potential barrier.
This electric field creates a drift current that opposes the
diffusion current.
when diffusion and drift currents balance each other then
equilibrium is reached.
The potential barrier at the junction depends on the charge
carriers and is governed by Boltzmann’s relation.
Pn = Pp xe −φ0 /(KT /q)

Pn = Pp xe −φ0 /VT

Pn = no. of holes in the ’n’ region

Pp = no. of holes in the ’p’ region
K = Boltzman’s constant = 1.3806x10−23 m2 Kg /s 2 K
T = junction temperature in degree Kelvin
q =electron charge in coloumb
φ0 = barrier potential
VT is of the order of tenths of a volt
forward biass means applying positive to ’p’ and negative to
’n’
on applying forward bias the barrier potential decreases from
φ0 to (φ0 − φ)
The resulting hole density in the n material is changed
Pn∗ = Pp xe −(φ0 −φ)/(KT /q) = Pn e φ/VT