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VCC
(Pin 1)
TEST
Diagnostic (Pin 3)
Circuitry
Regulator
Bandpass Filter Integrated
Dual Hall Tracking Capacitor VOUT
Transducers
(Pin 2)
Comparator
GND
(Pin 4) (Required)
1425-DSa, Rev.3
High Accuracy Analog Speed Sensor IC with Integrated
A1425
Filter Capacitor and Dual Zero-Crossing Output Signal
Description (continued)
The device utilizes advanced temperature compensation for the and an output driver, which requires a pull-up resistor. The on-
high-pass filter, sensitivity, and Schmitt trigger switchpoints, board regulator permits operation with supply voltages from 4.0
to guarantee optimal operation to low frequencies over a wide to 26.5 V. The output stage can easily switch 20 mA over the full
range of air gaps and temperatures. frequency response range of the device, and is compatible with
both TTL and CMOS logic circuits.
Each Hall effect digital integrated circuit includes a voltage
regulator, two Hall effect elements, temperature compensating The device is packaged in a 4-pin plastic SIP. It is lead (Pb) free,
circuitry, a low-level amplifier, band-pass filter, Schmitt trigger, with 100% matte tin plated leadframe.
Selection Guide
Switchpoints
Part Number Packing* BRP(MIN) BOP(MAX)
(G) (G)
A1425LK-T Bulk, 500 pieces/bag –11 11
*Contact Allegro for additional packing options.
1 2 3 4
OPERATING CHARACTERISTICS Valid at TA = – 40ºC to 150ºC, TJ ≤ 165°C; over operational air gap range and VCC within
operating range, unless otherwise noted. Typical operating parameters: VCC = 12 V and TA = 25°C.
Characteristic Symbol Test Conditions Min. Typ. Max. Units
ELECTRICAL CHARACTERISTICS
Supply Voltage VCC Operating; TJ < TJ(max) 4.0 – 26.5 V
Supply Current ICC – 4.2 7.0 mA
Output Saturation Voltage VOUT(SAT) ISINK = 20 mA – 140 400 mV
Output Leakage Current IOFF VOUT = 24 V, Bdiff = 0 – – 5 μA
PROTECTION COMPONENT CHARACTERISTICS
Reverse Supply Current IRCC VCC = –18 V – – –1 mA
Supply Zener Current IZSupply VS = 28 V – – 10 mA
Supply Zener Clamp Voltage1 VZSupply ICC = 10 mA, TA = 25°C 28 33 37 V
Output Zener Current IZOutput VOUT = 28 V – – 3 mA
Output Zener Clamp Voltage VZOutput IOUT = 3 mA, TA = 25°C 28 – – V
Output Short Circuit Current Limit2 IOUTS(lim) – – 50 mA
RESPONSE CHARACTERISTICS
Power-On State POS t < tResponse – High – V
Power-On Time3,7 tPO VCC > VCC(min) – 4.5 9 ms
Settling Time4,7 tSettle fBdiff ≥ 100 Hz 0 – 50 ms
Response Time7 tResponse Equal to tPO + tS; fBdiff ≥ 100 Hz 4.5 – 59 ms
Upper Corner Frequency fcu –3 dB, single pole 20 – – kHz
Lower Corner Frequency fcl –3 dB, single pole – – 20 Hz
OUTPUT CHARACTERISTICS
Output Rise Time5 tr RPU = 1 kΩ, COUT2 = 10 pF – – 200 ns
Output Fall Time tf RPU = 1 kΩ, ISINK = 20 mA, COUT2 = 10 pF – – 200 ns
MAGNETIC CHARACTERISTICS
Bdiff increasing, fBdiff = 200 Hz, Bdiff = 50 Gp-p;
Output Off Switchpoint6,7 BOP –11 0 11 G
digital output signal switches low to high
Bdiff decreasing, fBdiff = 200 Hz, Bdiff = 50 Gp-p;
Output On Switchpoint6,7 BRP –11 0 11 G
digital output signal switches high to low
Applied Magnetic Field7,8 Bdiff Differential p-p magnetic field 50 – 1250 G
1I
CC equivalent to ICC(max) + 3 mA.
2I
OUT does not change state when IOUT > IOUTS(lim) , regardless of changes in the impinging magnetic field.
3Time required to initialize device.
4Time required for the output switchpoints to be within specification.
5Output Rise Time will be dominated by the RC time constant.
6For other sinusoidal signal frequencies and magnetic fields, –B
OP = BRP = sinα(Bdiff ⁄ 2) ± 25%, where α is the phase shift shown in the Characteristic
Data section.
7See Definitions of Terms section.
8Exceeding the maximum magnetic field may result in compromised absolute accuracy.
THERMAL CHARACTERISTICS may require derating at maximum conditions, see application information
Characteristic Symbol Test Conditions Rating Units
Package Thermal Resistance RθJA Single-layer PCB, with copper limited to solder pads 177 ºC/W
30 900
28 850
26
VCC(max) 800
750
24
Maximum Allowable VCC (V)
700
22 650
20 600 (R
Power Dissipation, PD (m W)
18 550 θJ
A =
500 17
16 (RθJA = 177 ºC/W) 7
450 ºC
14 /W
400 )
12
350
10 300
8 250
6 200
150
4 VCC(min)
100
2
50
0 0
20 40 60 80 100 120 140 160 180 20 40 60 80 100 120 140 160 180
Definitions of Terms
The following provide additional information about some of output switches from high to low. This value may be greater
the parameters cited in the Operating Characteristics table. than or less than 0 G.
For additional information, visit the Allegro Web site at
Power-On Time, tPO – The time needed by the device, after
www.allegromicro.com.
power is applied, to initialize all circuitry necessary for proper
Applied Magnetic Field, Bdiff – The differential magnetic flux operation.
density which is calculated as the arithmetic difference of the
Settling Time, tSettle – The time required by the device, after tPO,
flux densities observed by each of the two Hall elements.
and after a valid magnetic signal has been applied, to provide
Output Off Switchpoint (Operate Point), BOP – The value of proper output transitions. Settling time is a function of magnetic
increasing differential magnetic flux density at which the device offset, offset polarity, signal phase, signal frequency, and signal
output switches from low to high. This value may be greater than amplitude.
or less than 0 G.
Response Time tResponse – The total time required for generat-
Output On Switchpoint (Release Point), BRP – The value of ing zero-crossing output transitions after power-up (the sum of
decreasing differential magnetic flux density at which the device power-on time and settling time).
Empirical Results
VOUT(SAT) (mV)
12
12.0
5 26
20.0 350 20.0
ICC (mA)
4 300
250
3 200
2 150
100
1 50
0 0
–50 0 50 100 150 200 –50 0 50 100 150 200
TA (ºC) TA (ºC)
25 25
5 –40 350
–40
ICC (mA)
4 300
250
3 200
2 150
100
1
50
0 0
0 10 20 30 0 5 10 15 20 25
VCC (V) VCC (V)
116
Repeatability (º of Rotation)
116
Repeatability (º of Rotation)
Simulation Results
35
30
25
25
Bdiff(min) (G)
150
20
–40
15
10
0
0.01 0.1 1 10 40
Frequency, fBdiff (kHz)
30
50
20 100
500
10 750
Phase Shift (º)
0 1250
–10 Bdiff in Gp-p
–20
–30
–40
–50
–60
0.01 0.1 1 10 40
Frequency, fBdiff (kHz)
15
IOUT Leading
10
IOUT Delay (μs)
5 Bdiff in Gp-p
0
50
–5 12
IOUT Lagging
0
75
0
50
50
–10
100
–15
–20
0.1 1 10 40
Frequency, fBdiff (kHz)
Positive values of delay indicate a lagging output, while negative values indicate a leading output.
0
1250
–1000 750
IOUT Delay (μs)
500
–2000
–4000
0
10
–5000
50
–6000
0 100
Frequency, fBdiff (Hz)
Positive values of delay indicate a lagging output, while negative values indicate a leading output.
Vs
R1
RPU
1
C1 VCC
A1425
4 2
GND VOUT
TEST
COUT2
3
(Required)
Functional Description
Comparator 1
Comparator 2
Figure 1. Typical output characteristics with dual comparator operation. Characteristics shown without delay, see Characteristic
Data section charts for delay and phase shift contributions.
Applications Information
Target Selection Power Supply Protection
The zero-crossing switchpoints and AC-coupled operation of this The A1425 contains an on-chip voltage regulator and can oper-
device make target selection important. For high-density target ate over a wide supply voltage range. In applications that operate
geometries or small target features that produce a sinusoidal the device from an unregulated power supply, transient protec-
magnetic signal, the high-pass filter is capable of filtering offsets tion must be added externally. For applications using a regulated
that may be induced in the final device output. If such offset is line, EMI/RFI protection may still be required. The circuit
present, and the target has larger features, then the high-pass shown in figure 3 is the most basic configuration required for
filter may not be effective at higher speeds and an accuracy shift proper device operation.
may occur. These relationships are shown in figure 2.
+B
Flux Density, Bdiff
(a)
0 VCC
1
–B 0.1 uF RPU
+V A1425 2 VOUT
4
Device Output
Voltage, VOUT
0 (Required)
t
Shift
+B
Flux Density, Bdiff
(b)
0
–B
+V
Device Output
Voltage, VOUT
0
t
Figure 2. Large Feature Effects. (a) Large target feature but no device offset,
normal edge position. (b) Large target feature with negative device offset, shifted
(advanced) output edge position.
For example, given common conditions such as: TA= 25°C, Compare VCC(est) to VCC(max). If VCC(est) ≤ VCC(max), then reli-
VCC = 5.0 V, ICC = 4.2 mA, and RJA = 177 °C/W, then: able operation between VCC(est) and VCC(max) requires enhanced
RJA. If VCC(est) ≥ VCC(max), then operation between VCC(est)
PD = VCC × ICC = 5.0 V × 4.2 mA = 21.0 mW and VCC(max) is reliable under these conditions.
T = PD × RJA = 21.0 mW × 177 °C/W = 3.7°C For example, when a standard diode with a 0.7 V drop is used:
TJ = TA + T = 25°C + 3.7°C = 28.7°C VS(max) = 12 V + 0.7 V = 12.7 V
+0.08
5.21 –0.05
45°
B
E E
1.50 1.55 ±0.05
2.20
D
NNNN
1.29 E Mold Ejector YYWW
+0.08 Pin Indent
3.43 –0.05
E1 E2 1
45°
Branded
D Standard Branding Reference View
Face
2.16 0.84 REF N = Device part number
MAX Y = Last two digits of year of manufacture
W = Week of manufacture
A
For Reference Only; not for tooling use (reference DWG-9010)
Dimensions in millimeters
Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
1 2 3 4
1.27 NOM