TVS Diode Arrays (SPA® Diodes)

SESD Series Enhanced ESD Diode Arrays

SESD Series Ultra Low Capacitance Discrete TVS RoHS Pb GREEN ELV

Description

The SESD Series Ultra Low Capacitance Discrete TVS

provides unidirectional and bidirectional ESD protection for
the world’s most challenging high speed serial interfaces.
Ultra low capacitance permits excellent signal integrity
on the most challenging consumer electronics interfaces,
such as USB 3.1, HDMI 2.0, DisplayPort, and V-by-One®.
Providing in excess of 20kV contact ESD protection
(IEC61000-4-2) while maintaining extremely low leakage
and dynamic resistance, offered in the industry’s most
popular footprints (0402 and 0201), the SESD series sets
higher standards for signal integrity and usability.

Pinout Features
• 0.13pF MAX bidirectional • Low profile 0201 and
0402 DFN • 0.25pF MAX unidirectional 0402 DFN packages
0201DFN
• ESD, IEC61000-4-2, • Facilitates excellent signal
1 integrity
1 ±20kV contact, ±20kV air
• AEC-Q101 qualified
• Low clamping voltage
of 10V @ IPP=2A • ELV Compliant
(Bidirectional) (tP=8/20μs)

2 2

Bottom View Applications

• Ultra-high speed data
lines
Functional Block Diagram • USB 3.1, 3.0, 2.0
• HDMI 2.0, 1.4a, 1.3
1 • DisplayPort(TM)
1 • Applications requiring
• Thunderbolt (Light Peak)
• V-by-One®
• LVDS interfaces
• C
 onsumer, mobile and
portable electronics
• Tablet PC and external
storage with high speed
interfaces
high ESD performance in
small packages

2
2

Unidirectional Bidirectional

© 2015 Littelfuse, Inc.

Specifications are subject to change without notice.
Revised: 05/26/15
 TVS Diode Arrays (SPA® Diodes)
SESD Series Enhanced ESD Diode Arrays

Absolute Maximum Ratings Thermal Information

Symbol Parameter Value Units Parameter Rating Units

IPP Peak Current (tp=8/20μs) 2.0 A Storage Temperature Range -55 to 150 °C

TOP Operating Temperature -55 to 125 °C Maximum Junction Temperature 150 °C

Maximum Lead Temperature
TSTOR Storage Temperature -55 to 150 °C 260 °C
(Soldering 20-40s)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.

Unidirectional Electrical Characteristics - (TOP=25°C)

Parameter Test Conditions Min Typ Max Units

Input Capacitance @ VR = 0V, f = 3GHz 0.20 0.25 pF
Breakdown Voltage VBR @ IT=1mA 9.00 V
Reverse Working Voltage 7.0 V
Reverse Leakage Current IL @ VRWM=5.0V 25 50 nA
Clamping Voltage VCL @ IPP=2.0A 9.20 V
IEC61000-4-2 (Contact) ±20
ESD Withstand Voltage kV
IEC61000-4-2 (Air) ±20

Bidirectional Electrical Characteristics - (TOP=25°C)

Parameter Test Conditions Min Typ Max Units

Input Capacitance @ VR = 0V, f = 3GHz 0.10 0.13 pF
Breakdown Voltage VBR @ IT=1mA 9.80 V
Reverse Working Voltage -7.0 7.0 V
Reverse Leakage Current IL @ VRWM=5.0V 25 50 nA
Clamping Voltage VCL @ IPP=2.0A 10.0 V
IEC61000-4-2 (Contact) ±20
ESD Withstand Voltage kV
IEC61000-4-2 (Air) ±20

Insertion Loss Diagram - Unidirectional Insertion Loss Diagram - Bidirectional

0 0

-5.0 -5.0
S21 Insertion Loss (dB)

S21 Insertion Loss (dB)

-10.0 -10.0

-15.0 -15.0

-20.0 -20.0

-25.0 -25.0

-30.0 -30.0
1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10
Frequency (Hz) Frequency (Hz)

© 2015 Littelfuse, Inc.

Specifications are subject to change without notice.
Revised: 05/26/15
TVS Diode Arrays (SPA® Diodes)
SESD Series Enhanced ESD Diode Arrays

Device IV Curve - Unidirectional Device IV Curve - Bidirectional

1.0 1.0

0.8 0.8

0.6 0.6

0.4 0.4

0.2 0.2

Current (mA)
Current (mA)

0.0 0.0

-0.2 -0.2

-0.4 -0.4

-0.6 -0.6

-0.8 -0.8

-1.0 -1.0

-2 -1 0 1 2 3 4 5 6 7 8 9 10 -10 -8 -6 -4 -2 0 2 4 6 8 10

Voltage (V) Voltage (V)

USB3.0 Eye Diagram

5.0 Gb/s, 1000mV differential, CPO Compliant Test Pattern

Without SESD Device With SESD Device

Soldering Parameters

Reflow Condition Pb – Free assembly tP

TP
- Temperature Min (Ts(min)) 150°C Critical Zone
TL to TP
Ramp-up
Pre Heat - Temperature Max (Ts(max)) 200°C
Temperature

TL
tL
- Time (min to max) (ts) 60 – 180 secs TS(max)
Average ramp up rate (Liquidus) Temp (TL) Ramp-do
Ramp-down
3°C/second max Preheat
to peak
TS(min)
TS(max) to TL - Ramp-up Rate 3°C/second max tS
- Temperature (TL) (Liquidus) 217°C
Reflow 25
- Temperature (tL) 60 – 150 seconds time to peak temperature
Time
Peak Temperature (TP) 260+0/-5 °C
Time within 5°C of actual peak
20 – 40 seconds Product Characteristics of 0402 DFN Package
Temperature (tp)
Ramp-down Rate 6°C/second max Lead Plating Pre-Plated Frame
Time 25°C to peak Temperature (TP) 8 minutes Max. Lead Material Copper Alloy
Do not exceed 260°C Lead Coplanarity 0.0004 inches (0.102mm)
Substrate material Silicon
Body Material Molded Epoxy
Flammability UL 94 V-0
Notes :
1. All dimensions are in millimeters
2. Dimensions include solder plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form.
5. Package surface matte finish VDI 11-13.

© 2015 Littelfuse, Inc.

Specifications are subject to change without notice.
Revised: 05/26/15
 TVS Diode Arrays (SPA® Diodes)
SESD Series Enhanced ESD Diode Arrays

Package Dimensions — 0201 DFN

A3
Millimeters Inches
Symbol
Min Typ Max Min Typ Max
A 0.28 0.30 0.32 0.011 0.012 0.013
END VIEW
A1 0 - 0.05 0 - 0.002
D b
A3 0.102 ref. 0.004 ref.
2
L1 D 0.25 0.30 0.35 0.010 0.012 0.014

PIN 1 ID E 0.55 0.60 0.65 0.022 0.024 0.026

E K e
C0.05
K 0.11 0.17 0.22 0.004 0.007 0.009
L2
1 b 0.20 0.25 0.30 0.008 0.010 0.012
SIDE VIEW 1 TOP VIEW SIDE VIEW 2 BOTTOM VIEW
L1 0.13 0.18 0.23 0.005 0.008 0.009
L2 0.14 0.19 0.24 0.006 0.007 0.009
e 0.356 BSC 0.014 BSC
A
M 0.32 0.013
A1
N 0.24 0.009
END VIEW O 0.62 0.024
P 0.14 0.006
M
P

Package Dimensions — 0402 DFN

A3
Millimeters Inches
Symbol
Min Typ Max Min Typ Max
END VIEW
A 0.33 0.38 0.43 0.013 0.015 0.017

b
A1 0 - 0.05 0 - 0.002
D
A3 0.13 ref. 0.005 ref.
L
D 0.55 0.60 0.65 0.022 0.024 0.026
E K e E 0.95 1.00 1.05 0.037 0.039 0.041
K 0.35 0.40 0.45 0.014 0.016 0.018
PIN 1 ID
0.125 x 45° b 0.45 0.50 0.55 0.018 0.020 0.022
SIDE VIEW1 TOP VIEW SIDE VIEW2 BOTTOM VIEW L 0.20 0.25 0.30 0.008 0.010 0.012
e 0.65 BSC 0.026 BSC
M 0.60 0.024
A
N 0.35 0.014
A1

END VIEW
O 1.00 0.039
P 0.30 0.012
M
P

© 2015 Littelfuse, Inc.

Specifications are subject to change without notice.
Revised: 05/26/15
TVS Diode Arrays (SPA® Diodes)
SESD Series Enhanced ESD Diode Arrays

Part Numbering System Part Marking System

SESD xxxx X 1 x N 00x0 – xxx

SESD product
Breakdown Voltage
090:9.0V (TYP)
C C C C
Package 098: 9.8V (TYP)
0201 Input Capacitance
0402 0010: 0.1pF (TYP)
Unidirectional Bidirectional
DFN Package 0020: 0.2pF (TYP)
No Common pin
1: one channel
Directional
U: Unidirectional
B: Bidirectional

Ordering Information

Part Number Package Marking Ordering Part Number Components/Reel Quantity

SESD0201X1UN-0020-090 0201 DFN I C RF2192-000 15000

SESD0201X1BN-0010-098 0201 DFN C RF2193-000 15000

SESD0402X1UN-0020-090 0402 DFN I C RF2943-000 10000

SESD0402X1BN-0010-098 0402 DFN C RF2945-000 10000

Embossed Carrier Tape & Reel Specification — 0201 DFN

D0 P2 P0 Symbol Millimeters
T
Y E1
A0 0.36+/-0.03
D1 B0 0.66+/-0.03
F W D0 ø 1.50 + 0.10/-0
B0
D1 ø 0.20 +/- 0.05
K0 E1 1.75+/-0.10
Section Y - Y
A0
P1 F 3.50+/-0.05
Y
K0 0.33+/-0.03
P0 4.00+/-0.10
P1 2.00+/-0.10
P2 2.00+/-0.05
W 8.00 +/-0.10
T 0.23+/-0.02

Embossed Carrier Tape & Reel Specification — 0402 DFN

D0 P2 P0
T
Y E1 Symbol Millimeters

D1 A0 0.70+/-0.05
F W
B0 1.15+/-0.05
B0
D0 ø 1.55 + 0.05
D1 ø 0.40 +/- 0.05
K0
A0
P1
E1 1.75+/-0.10
Section Y - Y Y
F 3.50+/-0.05
K0 0.47+/-0.05
P0 4.00+/-0.10
P1 2.00+/-0.10
P2 2.00+/-0.05
W 8.00 +/-0.10
T 0.20+/-0.05

© 2015 Littelfuse, Inc.

Specifications are subject to change without notice.
Revised: 05/26/15