SKM 145GB123D

Absolute Maximum Ratings 1 2 03 4*    

#
Symbol Conditions Values Units
IGBT
*5 .0//
&* 1 2 03 7/ 4* .83 ../ +
&*9 1 2 03 7/ 4* 
2 .  0:/ 00/ +
;5 < 0/
1= 1 1>59+1& ? 1 ' 8/ @@@ A .3/ .03 4*
 +* .  @ 03//
Inverse diode
SEMITRANSTM 2 &( 1 2 03 7/ 4* .B/ :/ +
&(9 1 2 03 7/ 4* 
2 .  B// 00/ +
&( 
2 ./ C  @C 1= 2 .3/ 4* ..// +
IGBT Modules
Freewheeling diode
&( 1 2 03 7/ 4* .D/ ..3 +
&(9 1 2 03 7/ 4* 
2 .  B// 00/ +
SKM 145GB123D &( 
2 ./ C  @C 1= 2 .3/ 4* .83/ +
SKM 145GAL123D
Characteristics 1 2 03 4*    
#
SKM 145GAR123D
Symbol Conditions min. typ. max. Units
IGBT
;5  ;5 2 *5 &* 2 8 + 83 33 $3
&*5 ;5 2 / *5 2 *5 1= 2 03 .03 4* /. /B +
Features 1= 2 03 .03 4* .8 .$ .$ .7
*5 1
  
    *5 ;5 2 .3  1= 2 03 .03 4* .. .3 .8 .: E
       *5  &* 2 .// + ;5 2 .3  
 03 B. B BD
      *   #     $3 73 (
 !       * ;5 2 / *5 2 03  # 2 . F . .3 (

 
   * /3 /$ (
    
"! # *5 B/ 
   $ % &  9**GA55G @  '
12 03 .03 4* /D3 . E
 '
#    ** 2 $//  &* 2 .// + .$/ B0/ 
 ( ) #   *+   9; 2 9;## 2 $7 E 1= 2 .03 4* 7/ .$/ 
 & 

 "
    ## ;5 2 < .3 8// 30/ 
,*- , *

 -   # D/ .// 
    ./    5 5## .$ .0 H

   0/  Inverse diode
2 &( 2 .// +C ;5 2 / C 1= 2 03 .03 4* 0 .7 03
Typical Applications ( 5*
1 1= 2 .03  4* .0
    #    1 1= 2 .03  4* 7 .. E
&99 &( 2 .// +C 1= 2 03 .03  4* B3 3/ +
I J 2 ./// +JK 3 .8 K*
5 ;5 2 H
FWD
( 2 5* &( 2 .// +C ;5 2 /  1= 2 03 .03 4* .: .D 08
1 1= 2 .03  4* .0
1 1= 2 .03  4* D E
&99 &( 2 .// +C 1= 2 03  4* 8/ $3 +
I J 2 +JK 3 .3 K*
5 ;5 2 H
Thermal characteristics
9 ='
 &;-1 /.3 LJM
9 =',
 &  , /B$ LJM
9 ='(,
 (M, /B LJM
9 '
  //3 LJM
Mechanical data
   N $ B 3 
    3 03 3 
GB GAL GAR  .$/ 

1 29-07-2004 SCT © by SEMIKRON

SKM 145GB123D

Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC)

Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)

Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic

2 29-07-2004 SCT © by SEMIKRON

SKM 145GB123D

Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG

Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f

Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current

3 29-07-2004 SCT © by SEMIKRON

SKM 145GB123D

Fig. 13 Typ. CAL diode recovered charge

UL Recognized Dimensions in mm
File no. E 63 532

;- * , $.

;+ * , $0 O , $.

;+9 * , $B O , $.

* , $.

This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.

This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.

4 29-07-2004 SCT © by SEMIKRON