Professional Documents
Culture Documents
IRF2807
HEXFET® Power MOSFET
l Advanced Process Technology D
l Ultra Low On-Resistance VDSS = 75V
l Dynamic dv/dt Rating
l 175°C Operating Temperature RDS(on) = 13mΩ
l Fast Switching G
l Fully Avalanche Rated ID = 82A
S
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.65
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62
www.irf.com 1
3/16/01
IRF2807
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.074 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 13 mΩ VGS = 10V, ID = 43A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 38 ––– ––– S VDS = 50V, ID = 43A
––– ––– 25 VDS = 75V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 60V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 160 ID = 43A
Qgs Gate-to-Source Charge ––– ––– 29 nC VDS = 60V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 55 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 13 ––– VDD = 38V
tr Rise Time ––– 64 ––– ID = 43A
ns
td(off) Turn-Off Delay Time ––– 49 ––– RG = 2.5Ω
tf Fall Time ––– 48 ––– VGS = 10V, See Fig. 10
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact S
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 43A, VGS = 0V
trr Reverse Recovery Time ––– 100 150 ns TJ = 25°C, IF = 43A
Qrr Reverse Recovery Charge ––– 410 610 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature. (See fig. 11)
This is a typical value at device destruction and represents
Starting TJ = 25°C, L = 370µH operation outside rated limits.
RG = 25Ω, IAS = 43A, VGS=10V (See Figure 12) This is a calculated value limited to TJ = 175°C .
Calculated continuous current based on maximum allowable
ISD ≤ 43A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C junction temperature. Package limitation current is 75A.
2 www.irf.com
IRF2807
100 100
4.5V
4.5V
1000 3.0
ID = 71A
RDS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)
2.5
TJ = 25 ° C
2.0
(Normalized)
TJ = 175 ° C
100 1.5
1.0
0.5
V DS = 25V
20µs PULSE WIDTH VGS = 10V
10 0.0
4.0 5.0 6.0 7.0 8.0 9.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C)
20
7000 ID = 43A
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED VDS = 60V
Ciss
12
4000
3000
Coss 8
2000
4
1000 Crss
1000 1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)
100
TJ = 175 ° C 100
100µsec
10
TJ = 25 ° C 10 1msec
1
Tc = 25°C
Tj = 175°C
V GS = 0 V Single Pulse 10msec
0.1 1
0.0 0.4 0.8 1.2 1.6 2.0 2.4
1 10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
100
RD
LIMITED BY PACKAGE VDS
VGS
80 D.U.T.
RG
I D , Drain Current (A)
+
-VDD
60
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
10%
VGS
Fig 9. Maximum Drain Current Vs.
td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50
0.20
0.1
0.10
P DM
0.05
t1
SINGLE PULSE
0.02 (THERMAL RESPONSE) t2
0.01
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
www.irf.com 5
IRF2807
600
ID
1 5V
400
RG D .U .T +
- VD D
IA S A 300
2V0GS
V
tp 0 .0 1 Ω
200
Fig 12a. Unclamped Inductive Test Circuit
100
V (B R )D SS
tp
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
50KΩ
12V .2µF
QG .3µF
VGS +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
6 www.irf.com
IRF2807
Peak Diode Recovery dv/dt Test Circuit
+
- +
-
RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D" VDD
-
• D.U.T. - Device Under Test
VGS
[VGS=10V ] ***
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5% [ ISD ]
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
8 www.irf.com