Copper indium

gallium selenide

Copper indium gallium (di)selenide (CIGS)

is a I-III-VI2 semiconductor material
composed of copper, indium, gallium, and
selenium. The material is a solid solution
of copper indium selenide (often
abbreviated "CIS") and copper gallium
selenide. It has a chemical formula of
CuInxGa(1-x)Se2 where the value of x can
vary from 1 (pure copper indium selenide)
to 0 (pure copper gallium selenide). CIGS
is a tetrahedrally bonded semiconductor,
with the chalcopyrite crystal structure, and
a bandgap varying continuously with x
from about 1.0 eV (for copper indium
selenide) to about 1.7 eV (for copper
gallium selenide).
 Copper indium gallium selenide

CIGS unit cell. Red = Cu, yellow = Se, blue = In/Ga

Identifiers
CAS Number 12018-95-
0 (CuInSe2)

Properties
Chemical formula CuInxGa(1-
x)Se2

Density ~5.7 g/cm3

Melting point 1,070 to

990 °C (1,960
to 1,810 °F;
1,340 to
 1,260 K)
(x=0–1)[1]

Band gap 1.7–1.0 eV

(x=0–1)[1]

Structure
Crystal structure tetragonal,
Pearson
symbol tI16
[1]

Space group I42d

Lattice constant a = 0.56–0.58
nm (x=0–1),
c = 1.10–1.15
nm (x=0–1)
Except where otherwise noted, data are given for
materials in their standard state (at 25 °C [77 °F],
100 kPa).

Infobox references
Structure
CIGS is a tetrahedrally bonded
semiconductor, with the chalcopyrite
crystal structure. Upon heating it
transforms to the zincblende form and the
transition temperature decreases from
1045 °C for x=0 to 805 °C for x=1.[1]

Applications
It is best known as the material for CIGS
solar cells a thin-film technology used in
the photovoltaic industry.[2] In this role,
CIGS has the advantage of being able to
be deposited on flexible substrate
materials, producing highly flexible,
lightweight solar panels. Improvements in
efficiency have made CIGS an established
technology among alternative cell
materials.

See also
Copper indium gallium selenide solar
cells
CZTS
List of CIGS companies

References
1. Tinoco, T.; Rincón, C.; Quintero, M.; Pérez,
G. Sánchez (1991). "Phase Diagram and
Optical Energy Gaps for CuInyGa1−ySe2
Alloys". Physica Status Solidi (a). 124 (2):
427. doi:10.1002/pssa.2211240206 .
2. "DOE Solar Energy Technologies Program
Peer Review" (PDF). U.S. department of
energy 2009. Retrieved 10 February 2011.

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