MITSUBISHI FAST RECOVERY DIODE MODULES

RM50DA/CA/C1A-XXF
HIGH SPEED SWITCHING USE
INSULATED TYPE

RM50DA/CA/C1A-XXF

• IDC DC current .................................. 50A

• VRRM Repetitive peak reverse voltage
.. 600/800/1000/1200V
• trr Reverse recovery time ............. 0.8µs
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271

APPLICATION
Free wheel use, Welders

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

53.5

43.3

16

DA
5.3

CA
36.5
18

14

D1A

R6

φ5.3 8

3–M4
33

3.5 3.5
7
24

22

LABEL
4.5

Feb.1999

This datasheet has been downloaded from http://www.digchip.com at this page

 MITSUBISHI FAST RECOVERY DIODE MODULES

RM50DA/CA/C1A-XXF
HIGH SPEED SWITCHING USE
INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS (Tj=25°C)

Voltage class
Symbol Parameter Unit
12 16* 20* 24
VRRM Repetitive peak reverse voltage 600 800 1000 1200 V
VDRM Non-repetitive peak reverse voltage 720 960 1100 1350 V
VR (DC) Reverse DC voltage 480 640 800 960 V
* Order made
Symbol Parameter Conditions Ratings Unit
IDC DC output current Resistive load, TC=105°C 50 A
IFSM Surge (non-repetitive) forward current One half cycle at 60Hz, peak value 1000 A
I2t I2t for fusing Value for one cycle of surge current 4.2x103 A2s
Tj Junction temperature –40~150 °C
Tstg Storage temperature –40~125 °C
Viso Isolation voltage Charged part to case 2500 V
0.98~1.47 N·m
Main terminal screw M4
10~15 kg·cm
— Mounting torque
1.47~1.96 N·m
Mounting screw M5
15~20 kg·cm
— Weight Typical value 90 g

ELECTRICAL CHARACTERISTICS
Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
IRRM Repetitive reverse current Tj=150°C, VRRM applied — — 10 mA
VFM Forward voltage Tj=25°C, IFM=50A, instantaneous meas. — — 1.5 V
trr Reverse recovery time — — 0.8 µs
IFM=50A, di/dt=–100A/µs, VR=300/600V*1, Tj=150°C
Qrr Reverse recovery charge — — 30 µC
Rth (j-c) Thermal resistance Junction to case — — 0.6 °C/ W
Rth (c-f) Contact thermal resistance Case to fin, conductive grease applied — — 0.3 °C/ W
*1 12, 16 class: VR=300V 20, 24 class: VR=600V

Feb.1999
 MITSUBISHI FAST RECOVERY DIODE MODULES

RM50DA/CA/C1A-XXF
HIGH SPEED SWITCHING USE
INSULATED TYPE

PERFORMANCE CURVE
MAXIMUM FORWARD CHARACTERISTIC MAXIMAM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
10 0 2 3 4 57 10 1 2 3 4 5
10 3 1.0
7 Tj=25°C
5
3 0.8
FORWARD CURRENT (A)

2
10 2

Zth (j-c) (°C/W)

7 0.6
5
3
2 0.4
10 1
7
5 0.2
3
2
10 0 0
0.4 0.8 1.2 1.6 2.0 2.4 10 –3 2 3 4 5 7 10 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0

FORWARD VOLTAGE (V) TIME (s)

RATED SURGE (NON-REPETITIVE) REVERSE RECOVERY CHARACTERISTICS

FORWARD CURRENT VS. FORWARD CURRENT (TYPICAL)
1000 10 2 10 2
7 VR=300/600V 7
5 di/dt=–100A/µs Irr 5
800 3 3
SURGE (NON-REPETITIVE)

2 2
FORWARD CURRENT (A)

Qrr
10 1 10 1
Irr (A), Qrr (µC)

600 7 7
5 5

trr (µs)
3 3
2 2
400
10 0 10 0
7 trr 7
5 5
200
3 Tj=25°C 3
2 Tj=150°C 2
0 10 –1 10 –1
10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3

CONDUCTION TIME FORWARD CURRENT (A)

(CYCLES AT 60Hz)

REVERSE RECOVERY CHARACTERISTICS

VS. –di/dt (TYPICAL)
10 2 10 2
7 VR=300/600V Irr 7
5 IF=50A 5
3 Tj=25°C 3
2 Tj=150°C 2
Qrr
10 1 10 1
Irr (A), Qrr (µC)

7 7
5 5
trr (µs)

3 3
2 2
10 0 10 0
7 7
5 trr 5
3 3
2 2
10 –1 10 –1
10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3

–di/dt (A/µs)

Feb.1999