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Signal Conditioning and

Linearization of RTD
Sensors
Collin Wells
Texas Instruments
HPA Precision Linear Applications
9/24/11
Introduction

• Primary Support
– 4-20mA Loop Drivers (XTRXXX)
– Gamma Buffers (BUFXXXXX)

• Other Support
– Temperature Sensors (TMP)
– IR Temperature Sensors (TMP006)
– OPA Stability
– Instrument Amplifiers

• Applications (Other)
– Industrial – Programmable Logic Controllers (PLC)
– RTD
– Reference Designs
Contents
•RTD Overview
•RTD Nonlinearity
•Analog Linearization
•Digital Acquisition and Linearization
What is an RTD?
• Resistive Temperature Detector
• Sensor with a predictable resistance vs. temperature
• Measure the resistance and calculate temperature based on the
Resistance vs. Temperature characteristics of the RTD material
RTD Resistance vs. Temperature
400

360

320

280
Resistance (Ohms)

R RTD RTD (Temp)


240
PT100
200

α = 0.00385
160

120

80

40

0
 200  100 0 100 200 300 400 500 600 700 800
Temperature (C)
How does an RTD work?
• L = Wire Length
 L • A = Wire Area
Resistance R
A • e = Electron Charge
(1.6e-19 Coulombs)
1 • n = Electron Density
Resisti vity p
e n  
• u = Electron Mobility

• The product n*u decreases over temperature, therefore resistance


increases over temperature (PTC)

• Linear Model of Conductor Resistivity Change vs. Temperature

( t)  
0 1   t  t0 
What is an RTD made of?
Resistivity
• Platinum (pt) Metal (Ohm/CMF)
Gold (Au) 13
• Nickel (Ni) Silver (Ag) 8.8
Copper (Cu) 9.26
• Copper (Cu)
Platinum (Pt) 59
•Have relatively linear change in resistance over temp Tungsten (W) 30
•Have high resistivity allowing for smaller dimensions Nickel (Ni) 36
•Either Thin-Film or Wire-Wound

*Images from RDF Corp


How Accurate is an RTD?
• Absolute accuracy is “Class” dependant - defined by DIN-IEC 60751. Allows for easy
interchangeability of field sensors

**Temperature Range of
Error Error over
Validity
at Wire-
Tolerance Class Wire- Resistance at 100C Wound
(DIN-IEC 60751) Wound Thin-Film Tolerance Values (C) 0C (Ohms) (C) Range (C)

*AAA (1/10 DIN) 0 - +100 0 - +100 +/-(0.03 + 0.0005*t) 100 +/- 0.012 0.08 0.08

AA (1/3DIN) -50 - +250 0 - +150 +/-(0.1 + 0.0017*t) 100 +/- 0.04 0.27 0.525

A -100 - +450 -30 - +300 +/-(0.15 + 0.002*t) 100 +/- 0.06 0.35 1.05

B -196 - +600 -50 - +500 +/-(0.3 + 0.005*t) 100 +/- 0.12 0.8 3.3

C -196 - +600 -50 - +600 +/-(0.6 + 0.01*t) 100 +/- 0.24 1.6 6.6
*AAA (1/10DIN) is not included in the DIN-IEC-60751 spec but is an industry accepted tolerance class for high-performance
measurements
**Manufacturers may choose to guarantee operation over a wider temperature range than the DIN-IEC60751 provides

• Repeatability usually very good, allows for individual sensor calibration


• Long-Term Drift usually <0.1C/year, can get as low as 0.0025C/year
Why use an RTD?
Table Comparing Advantages and Disadvantages of Temp Sensors
How to Measure an RTD Resistance?
• Use a…….
Current Source or Wheatstone Bridge
+Vsource

RA RA
+
RRTD VMEAS ISOURCE
-
VMEAS

+
-
RA RRTD

Vmeas Isource  RRTD


Isource RRTD
 RRTD  1
Vmeas Vmeas Vsource   
 RA  RRTD  2
Vmeas 2 RA Vmeas  RA Vsource
RRTD RRT D
Isource Vsource  2 Vmeas
Note on Non-Linear Output of Bridge
+Vsource
 RRTD  1
Vmeas Vsource    
RA  RRTD 100 100
  2

ΔRTD = 50Ohms
-
VMEAS

+
Denominator causes a non-linear 100
output even for a linear sensor
RTD

500.00m

375.00m
Voltage (V)

250.00m

125.00m

0.00
100.00 112.50 125.00 137.50 150.00
Input resistance (ohms)
Simple Current Source / Sink Circuits
+5V +5V
REF200
R9 10k

+5V RTD 100


R3 40k
R12 10k
U1 OPA333 -
+
+
Q1 +
R4 10k + Q2
- U2 OPA333

AM5
I_Out 100uA R8 40k +5V 100uA

Rset 10k RTD 100

U8 REF5025 V3 2.5
+5V R2 200k
Vin Vout -
R1 INA326T1 INA326T

+
1u Tem p
10u Vdiff -49.85m
GND Trim R1 +
+

R3 49.9
R2
1u
Rset 25k

+
V2 2.5

R1 10k
Vcm 2.5

- I_Out 100.05uA

C1 100n

R4 100
+
+5V +
U9 OPA340

I_Out 100uA
RTD 100
RTD Types and Their Parasitic Lead Resistances
RL RL White
White

2-Wire RRTD 3-Wire RRTD

Red Red

RL RL
Red
RL
RL White
RL White
RL White
RRTD
2-Wire with Red
4-Wire RRTD Compensating RL
Loop RL Blue
Red
RL Blue
Red
RL
RL
2-Wire Measurements

+Vsource
RL

RA
A
R
+ RL
RRTD VMEAS I SOURCE -
VMEAS

+
-

RRTD

RA
RL
Vmeas Isource  RRTD  Isource  2 RL RL
Error Isource  2RL
 RRTD  2RL  1
Vmeas Vsource     
 RA  RRTD  2.RL  2

 2 RA  RL 
Error Vsource  
  RA  RRTD   RA  2 RL  RRTD

3-Wire Measurements

ISOURCE1 +Vsource
RL
RA RA RL
+
RRTD VMEAS
-
ISOURCE2 VMEAS
-

+
RL
RA RRTD
RL
RL
RL

Isource1 Isource2 I  RRTD  RL  1


Vmeas Vsource   
RA  RRTD  2 RL
Vmeas I RL  I RRTD  ( 2 I)  RL I RRTD  3 I RL   2

+
Vmeas I RL  ( 2 I)  RL 3 I RL  RL  RA  RRTD 
Error Vsource   
 RA  RRTD   RA  2 RL  RRTD
-
Vmeas  Vmeas I RRTD  3 I RL  3 I RL I RRTD  
+ -
Error = 0 as long as Isource1 = Isource2 and RL are equal
4-Wire Measurements

+Vsource
RL
RL RA RA

RL
+
VMEAS
-

+
RRTD VMEAS I RL
-
RL RRTD
RA
RL RL
RL

Isource  RRTD

RA Vsource  RA  RRT D 
Vmeas Vmeas 
2 2
2 RA  6 RA RL  2 RRT D RA  4 RL  2 RRT D RL
System Errors reduced to
measurement circuit accuracy  RL  2.0 RA  2.0 RRTD 
Error Vsource  
  RA  RRTD   RA  4.0 RL  RRTD

Self-Heating Errors of RTD
• Typically 2.5mW/C – 60mW/C
• Set excitation level so self-heating error is <10% of the total error
budget
Self-Heating Error of an RTD vs. Exciation Current
10

0.1
Temperature (C)

Errorselfheat200n( I) 0.01

Errorselfheat0( I) 3
110
Errorselfheat850( I)
4
110

5
110

6
110

7
110
5 4 3
110 110 110 0.01
I

Current (A)
RTD Resistance vs Temperature
Callendar-Van Dusen Equations Equation Constants for
For (T > 0) : RTD( T)  R0 1  A  T  B T  2 IEC 60751 PT-100 RTD (α = 0.00385)

RTD( T)  R0 1  A  T  B  T   C  T   ( T  100)


R0  100
2 3
For (T < 0) :
3
A  3.908310

RTD Resistance vs. Temperature
400 7
B  5.775 10
360
 12
C  4.183 10
320

280
Resistance (Ohms)

240

RTD (T)
200

160

120

80

40

0
 200  100 0 100 200 300 400 500 600 700 800
Temperature (C)
RTD Nonlinearity
RTD Resistance vs. Temperature
400

Linear fit between the two end-points 360

shows the Full-Scale nonlinearity 320

280

Resistance (Ohms)
240
RTD( Temp)

R LINFIT( Temp)
200

160

Nonlinearity and Temperature Error vs. Temperature 120

5 50
80

4.5
40
4 40
Temperature Nonlinearity (%FSR)

0
 200  95 10 115 220 325 430 535 640 745 850
3.5

Temperature Error (C)


Temperature (C)

3 30
Nonlinearity = 4.5%
2.5
Temperature Error > 45C
2 20

1.5

1 10

0.5

0 0
 200  95 10 115 220 325 430 535 640 745 850

Temperature (C)
RTD Nonlinearity
For (T > 0) : RTD( T)  R0 1  A  T  B T  2 RTDlinear ( T)  R0 ( 1  A  T)

RTD( T)  R0 1  A  T  B  T   C  T   ( T  100)


2 3
For (T < 0) :

R0  100 RTD Resistance vs. Temperature


450

3
A  3.908310
 405

7
B  5.775 10 360

 12
C  4.183 10
315
Resistance (Ohms)

RTD( Temp) 270

RTD linear (Temp)


225

180
B and C terms are negative so
2nd and 3rd order effects 135

decrease the sensor output 90


over the sensor span.
45

0
 200  95 10 115 220 325 430 535 640 745 850
Temperature (C)
Measurement Nonlinearity
+
RRTD VMEAS ISOURCE
-

Vmeas Isource  RRTD


RTD Sensor Output vs. Temperature (Isource = 100uA)
0.045

0.0415

0.038

0.0345

0.031
Voltage (V)

V RTD (Temp)
0.0275
V RTD_linear (Temp)

0.024

0.0205

0.017

0.0135

0.01
0 80 160 240 320 400 480 560 640 720 800
Temperature (C)
Correcting for Non-Linearity
Sensor output decreases over span? Compensate by increasing excitation over span!

+ +
RRTD VMEAS
-
ISOURCE  I SOURCE RRTD VMEAS
-
I CORRECTION
Icorrection = gain*Vmeas+Offset

Vmeas Isource  RRTD Vmeas (Isource + I correction   R RTD


RTD Sensor Output vs. Temperature (Isource = 100uA)
0.045

0.0415

Increasing excitation source over measurement


0.038
span produces linear sensor output
0.0345

0.031
Voltage (V)

V RTD (Temp)
0.0275
V RTD_linear (Temp)

0.024

0.0205

0.017

0.0135

0.01
0 80 160 240 320 400 480 560 640 720 800
Temperature (C)
VRTD_linear ( T)  RTDlinear ( T)  Isource

Correcting for Non-linearity VRTD_linear (T)  VRTD( T) 


Isource  0.0005 Isource_correction ( T)  Isource 
RTD( T)

VRTD( T)  RTD( T)  Isource


VRTD_correction ( T)  RTDlinear ( T)  Isource_correction ( T)

VRTD_linear ( T)  RTDlinear ( T)  Isource


VRTD_linearized ( T)  Isource_correction ( T)  RTD( T)

VRTD_linear (T)  VRTD


RTD( T) 
Resistance vs. Temperature
Isource_correction ( T)  Isource  0.25

RTD( T)
0.225

VRTD_correction ( T)  RTDlinear
0.2
( T)  Isource_correction ( T)

0.175
VRTD_linearized ( T)  Isource_correction ( T)  RTD( T)
VRTD ( Temp ) 0.15
Voltage (V)

VRTD_correction ( Temp )
0.125
VRTD_linearized ( Temp )
0.1

0.075

0.05

0.025

0
 200  100 0 100 200 300 400 500 600 700 800
Temp

Temperature (C)
Analog Linearization
Circuits
Analog Linearization Circuits
Two-Wire Single Op-Amp Example
Amplifiers:
R2 49.13k R3 60.43k Low-Voltage:
OPA333
Vout OPA376
-

R4 1k
R1 4.99k

V1 5 High Voltage:
+
OPA188
OPA277
R5 105.83k

I_Correction
RTD 100

A voltage-controlled current
source is formed from the op-amp
I_RTD
output through R4 into the RTD

This circuit is designed for a 0-5V output for a 0-200C temperature span. Components R2, R3,
R4, and R5 are adjusted to change the desired measurement temperature span and output.
R2 49.13k R3 60.43k

Analog Linearization Circuits -


Vout

R4 1k
R1 4.99k
V1 5

Two-Wire Single Op-Amp +

R5 105.83k

I_Correction

Non-linear increase in excitation current over temperature

RTD 100
span will help correct non-linearity of RTD measurement I_RTD

50.00u

37.50u

I_Correction (A)25.00u

12.50u

0.00
1.01m

1.00m

I_RTD (A) 996.00u

988.00u

980.00u
0.00 50.00 100.00 150.00 200.00
Temperature (C)
75.00
R2 49.13k R3 60.43k

Analog Linearization Circuits -


Vout

R4 1k
R1 4.99k
50.00
V1 5

Two-Wire Single Op-Amp +

R5 105.83k

I_Correction
This type of linearization typically provides a 20X - 40X

RTD 100
25.00
improvement in linearity
I_RTD

5.00

0.00
4.38
2.50

1.88

1.25

0.00
625.00m

3.75

3.13 Without Correction


Voltage (V)

(V) 2.50

1.88 With Correction

1.25

625.00m

0.00
0.00 25.00 50.00 75.00 100.00 125.00 150.00 175.00 200.00
Temperature (C)
Analog Linearization Circuits
Three-Wire Single INA A voltage-controlled current Example
source is formed from the INA Amplifiers:
+15V

R1 4.99k

R2 4.99k
output through Rlin into the RTD
V1 15 Low-Voltage:
I_Bias
I_Correction Rlin 105.83k INA333
V2 5 INA114
-15V
V3 15
-
Rg

Rz 100
Vout High Voltage

Rg 801
-15V
Rg
Ref INA826
+ U2 INA826
+ INA114
+15V
I_RTD

This circuit is designed for a 0-5V output


RL1 1

RL2 1

RL3 1

for a 0-200C temperature span.


Components Rz, Rg, and Rlin are adjusted
to change the desired measurement
RTD 100 temperature span and output.
Remote RTD
+15V

R7 4.99k

R9 4.99k
V1 15

Analog Linearization Circuits


I_Bias
I_Correction R2 105.83k
V2 5
-15V
V3 15
-
Rg

R14 100
Vout

R6 801
Three-Wire Single INA
-15V
Ref

R1 10k
Rg
+ U2 INA826
+

+15V
I_RTD

This type of linearization typically provides a 20X - 40X


improvement in linearity and some lead resistance cancellation

RL1 1

RL2 1

RL3 1
5.00 RTD 175.8

Remote RTD

4.37

3.75

3.12
Without Correction
Voltage (V) 2.50

1.87 With Correction

1.25

622.27m

0.00
0.00 25.00 50.00 75.00 100.00 125.00 150.00 175.00 200.00
Temperature (C)
Analog Linearization Circuits
XTR105 4-20mA Current Loop Output

Iref1 800u
XTR105

Rlin1 16.099k i_lin i_jfet


Iref2 800u
Q1_EXT

R4 1k
OA1
+
Q1_INT
VIN+

R5 1k
i_rtd -

Rlin 1k
Rg 162.644

R_CL 0
OA3
-
VIN- V_PS 24
Q1

-
+
OA2
RTD 100 Rz 100 i_afe

VCM Rcm 1.5k


R2 25
R1 975
V_420
I_Out
i_Q1

RL 250
Analog Linearization Circuits
XTR105 4-20mA Current Loop Output
20.00m

18.00m

16.00m

14.00m

Without Correction
I_Out (A) 12.00m

10.00m
With Correction
8.00m

6.00m

4.00m
0.00 25.00 50.00 75.00 100.00 125.00 150.00 175.00 200.00
Temperature (C)
Analog + Digital Linearization Circuits
XTR108 4-20mA Current Loop Output
Digital Acquisition Circuits
and Linearization Methods
Digital Acquisition Circuits
ADS1118 16-bit Delta-Sigma 2-Wire Measurement with Half-Bridge

+V source

RA RA

RL AIN0

RRTD
RL
AIN1

RL AIN2

RRTD
AIN3
RL
Digital Acquisition Circuits
ADS1220 24-bit Delta-Sigma Two 3-wire RTDs

R REF
+V source +Vdig

RL
RL

R RTD

RL
RL
RL R COMP

R RTD
RL

3-wire + Rcomp shown for AIN2/AIN3


Digital Acquisition Circuits
ADS1220 24-bit Delta-Sigma One 4-Wire RTD

R REF
+V source +Vdig

RL
RL

R RTD

RL
RL
Digital Acquisition Circuits
ADS1247 24-bit Delta-Sigma Three-Wire + Rcomp
Digital Acquisition Circuits
ADS1247 24-bit Delta-Sigma Four-Wire
Digital Linearization Methods
• Three main options
– Linear-Fit
– Piece-wise Linear Approximations
– Direct Computations
RTD Sensor Output vs. Temperature (Isource = 100uA)
0.04

0.037

0.034

0.031

0.028
Voltage (V)

V RTD (Temp) 0.025

0.022

0.019

0.016

0.013

0.01
0 80 160 240 320 400 480 560 640 720 800
Temperature (C)
Digital Linearization Methods
Linear Fit
Pro’s: Con’s:
•Easiest to implement Least Accurate
•Very Fast Processing Time
•Fairly accurate over small temp span

TLinear ( t) A  RTD( t)  B
End-point Fit Best-Fit
RTD Sensor Output vs. Temperature (Isource = 100uA) RTD Sensor Output vs. Temperature (Isource = 100uA)
0.04 0.04

0.037 0.037

0.034 0.034

0.031 0.031

0.028 0.028

Voltage (V)
Voltage (V)

V RTD( Temp ) V RTD( Temp)


0.025 0.025
V Lin_Fit ( Temp) V Lin_Fit (Temp)

0.022 0.022

0.019 0.019

0.016 0.016

0.013 0.013

0.01 0.01
0 80 160 240 320 400 480 560 640 720 800 0 80 160 240 320 400 480 560 640 720 800
Temp Temp
Temperature (C) Temperature (C)
Digital Linearization Methods
Piece-wise Linear Fit
Pro’s: Con’s:
•Easy to implement •Code size required for coefficients
•Fast Processing Time
T( n  1)  ( T( n )  T( n  1) )  
RT D  RT D( n  1)
•Programmable accuracy TPeicewise 
 RT D( n)  RT D( n  1) 
RTD Sensor Output vs. Temperature (Isource = 100uA)
0.04

0.037

0.034

0.031

0.028
Voltage (V)

V RTD (Temp) 0.025


V Lin_Fit (Temp)
0.022

0.019

0.016

0.013

0.01
0 80 160 240 320 400 480 560 640 720 800
Temperature (C)
Digital Linearization Methods
Direct Computation
Pro’s: Con’s:
•Almost Exact Answer, Least Error •Processor intensive
•With 32-Bit Math Accuracy to +/-0.0001C •Requires Math Libraries
•Negative Calculation Requires
simplification or bi-sectional solving
RTD Sensor Output vs. Temperature (Isource = 100uA)
0.04

Positive Temperature Direct Calculation 0.037

A  A  4B  1 
RTD( t) 
0.034

2
R0 
0.031

  0.028

Voltage (V)
TDirect( t) V RTD (Temp) 0.025

+ 2B 0.022

0.019

0.016

Negative Temperature Simplified Approximation 0.013

3 6 8
0.01
2 0 80 160 240 320
3
400 480 560 640 720 800

TDirect ( t) 241.96  2.2163 RTD ( t)  2.8541 10  RTD ( t)  9.9121 10  RTD ( t)  1.7052 10


Temperature (C)
 RTD ( t
-
3 2 6 3 8 4
0  RTD( t)  9.9121 10  RTD( t )  1.705210   RTD( t )
Digital Linearization Methods
Direct Computation
Bi-Section Method for Negative Temperatures
RTDError  100 Res  60.256 Tlow  250 Thigh  50

TBisection  RTDTemp  0  99.999


-
while ( RTDError  0.0001)
( Tlow  Thigh )
Tmid 
2

Rcal  100 1  A  Tmid  B Tmid  ( Tmid  100)  C Tmid


2 3
 if Tmid  0

Rcal  100 1  A  Tmid  B Tmid
2  if Tmid  0
Rcal  0 if Rcal  0
RTDError  Res  Rcal
Tlow  Tmid if RTDError  0
Thigh  Tmid if RTDError  0
RTDTemp  Tmid
return RTDTemp

TBisection  99.999
-
Questions/Comments?

Thank you!!
Special Thanks to:
Art Kay
Bruce Trump
PA Apps Team
Mike Beckman
Omega Sensors
RDF Corp
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incorporate TI semiconductor products (also referred to herein as “components”). Buyer understands and agrees that Buyer remains
responsible for using its independent analysis, evaluation and judgment in designing Buyer’s systems and products.
TI reference designs have been created using standard laboratory conditions and engineering practices. TI has not conducted any
testing other than that specifically described in the published documentation for a particular reference design. TI may make
corrections, enhancements, improvements and other changes to its reference designs.
Buyers are authorized to use TI reference designs with the TI component(s) identified in each particular reference design and to modify the
reference design in the development of their end products. HOWEVER, NO OTHER LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL
OR OTHERWISE TO ANY OTHER TI INTELLECTUAL PROPERTY RIGHT, AND NO LICENSE TO ANY THIRD PARTY TECHNOLOGY
OR INTELLECTUAL PROPERTY RIGHT, IS GRANTED HEREIN, including but not limited to any patent right, copyright, mask work right,
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Information published by TI regarding third-party products or services does not constitute a license to use such products or services, or a
warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual
property of the third party, or a license from TI under the patents or other intellectual property of TI.
TI REFERENCE DESIGNS ARE PROVIDED "AS IS". TI MAKES NO WARRANTIES OR REPRESENTATIONS WITH REGARD TO THE
REFERENCE DESIGNS OR USE OF THE REFERENCE DESIGNS, EXPRESS, IMPLIED OR STATUTORY, INCLUDING ACCURACY OR
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INTELLECTUAL PROPERTY RIGHTS WITH REGARD TO TI REFERENCE DESIGNS OR USE THEREOF. TI SHALL NOT BE LIABLE
FOR AND SHALL NOT DEFEND OR INDEMNIFY BUYERS AGAINST ANY THIRD PARTY INFRINGEMENT CLAIM THAT RELATES TO
OR IS BASED ON A COMBINATION OF COMPONENTS PROVIDED IN A TI REFERENCE DESIGN. IN NO EVENT SHALL TI BE
LIABLE FOR ANY ACTUAL, SPECIAL, INCIDENTAL, CONSEQUENTIAL OR INDIRECT DAMAGES, HOWEVER CAUSED, ON ANY
THEORY OF LIABILITY AND WHETHER OR NOT TI HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, ARISING IN
ANY WAY OUT OF TI REFERENCE DESIGNS OR BUYER’S USE OF TI REFERENCE DESIGNS.
TI reserves the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per
JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant
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TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms
and conditions of sale of semiconductor products. Testing and other quality control techniques for TI components are used to the extent TI
deems necessary to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not
necessarily performed.
TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and
applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide
adequate design and operating safeguards.
Reproduction of significant portions of TI information in TI data books, data sheets or reference designs is permissible only if reproduction is
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anticipate dangerous failures, monitor failures and their consequences, lessen the likelihood of dangerous failures and take appropriate
remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use of any TI components in
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In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to
help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and
requirements. Nonetheless, such components are subject to these terms.
No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties
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Only those TI components that TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use in
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requirements in connection with such use.
TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of
non-designated products, TI will not be responsible for any failure to meet ISO/TS16949.

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