PD - 95093A

IRLR8103VPbF
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current D
applications
• 100% RG Tested
• Lead-Free
G
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented balance D-Pak S
of on-resistance and gate charge. The reduced conduction
and switching losses make it ideal for high efficiency DC-
DC converters that power the latest generation of
microprocessors.
DEVICE CHARACTERISTICS…
The IRLR8103V has been optimized for all parameters
that are critical in synchronous buck converters including IRLR8103V
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRLR8103V offers an extremely low combination of RDS(on) 7.9 mΩ
Qsw & RDS(on) for reduced losses in both control and QG 27 nC
synchronous FET applications.
QSW 12 nC
The package is designed for vapor phase, infra-red, QOSS 29nC
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical PCB
mount application.

Absolute Maximum Ratings

Parameter Symbol IRLR8103V Units
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ±20
Continuous Drain or Source Current TC = 25°C 91
ID
(VGS > 10V) TC= 90°C 63 A
c
Pulsed Drain Current IDM 363

Power Dissipation e

TC = 25°C 115
PD W
TC = 90°C 60
Junction & Storage Temperature Range TJ , TSTG -55 to 150 °C
Continuous Source Current (Body Diode) IS 91
Pulsed Source Current c ISM 363
A

Thermal Resistance
Parameter Symbol Typ. Max. Units
Maximum Junction-to-Ambient eh RθJA ––– 50
Maximum Junction-to-Case h RθJC ––– 1.09
°C/W

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Electrical Characteristics
Parameter Symbol Min Typ Max Units Conditions
Drain-to-Source Breakdown Voltage BVDSS 30 ––– ––– V VGS = 0V, ID = 250µA
Static Drain-Source RDS(on) ––– 6.9 9.0 VGS = 10V, ID = 15A d
On-Resistance ––– 7.9 10.5
mΩ
VGS = 4.5V, ID = 15A d
Gate Threshold Voltage VGS(th) 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current IDSS ––– ––– 50 µA VDS = 30V, VGS = 0V
––– ––– 20 VDS = 24V, VGS = 0
µA
––– ––– 100 VDS = 24V, VGS = 0, TJ = 100°C
Gate-Source Leakage Current IGSS ––– ––– ±100 nA VGS = ± 20V
Total Gate Charge, Control FET QG ––– 27 ––– VGS = 5V, ID = 15A, VDS = 16V
Total Gate Charge, Synch FET QG ––– 23 ––– VGS = 5V, VDS < 100mV
Pre-Vth Gate-Source Charge QGS1 ––– 4.7 –––
Post-Vth Gate-Source Charge QGS2 ––– 2.0 ––– nC
VDS = 16V, ID = 15A
Gate to Drain Charge QGD ––– 9.7 –––
Switch Charge (Qgs2 + Qgd) QSW ––– 12 –––
Output Charge QOSS ––– 29 ––– VDS = 16V, VGS = 0
Gate Resistance RG 0.8 ––– 3.1 Ω
Turn-On Delay Time td(on) ––– 10 ––– VDD = 16V
Rise Time tr ––– 9 ––– ID = 15A
ns
Turn-Off Delay Time td(off) ––– 24 ––– VGS = 5.0V
Fall Time tf ––– 18 ––– Clamped Inductive Load
Input Capacitance Ciss ––– 2672 –––
Output Capacitance Coss ––– 1064 ––– pF VGS = 16V, VGS=0
Reverse Transfer Capacitance Crss ––– 109 –––
Source-Drain Rating & Characteristics
Parameter Symbol Min Typ Max Units Conditions
Diode Forward Voltage VSD ––– 0.9 1.3 V d
IS = 15A , VGS = 0V
Reverse Recovery Charge f Qrr ––– 103 ––– nC di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IF = 15A
Reverse Recovery Charge Qrr(s) ––– 96 ––– nC di/dt = 700A/µs , (with 10BQ040)
(with Parallel Schottky) f VDS= 16V, VGS = 0V, IF = 15A

Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width ≤ 400 µs; duty cycle ≤ 2%.
ƒ When mounted on 1 inch square copper board, t < 10 sec.
„ Typ = measured - Q oss
… Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS = 5.0V, IF = 15A.

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 IRLR8103VPbF
1000 1000 VGS
VGS
TOP 15V TOP 15V
10V 10V

I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

7.0V 7.0V
5.5V 5.5V
4.5V 4.5V
4.0V 4.0V
3.5V 3.5V
BOTTOM 2.7V BOTTOM 2.7V
100 100

2.7V
2.7V

10 10

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25 °C TJ = 150 °C
1 1
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 2.0
RDS(on) , Drain-to-Source On Resistance

ID = 15A
I D , Drain-to-Source Current (A)

1.5
TJ = 25 ° C
(Normalized)

TJ = 150 ° C
100 1.0

0.5

V DS= 15V
20µs PULSE WIDTH VGS = 10V
10 0.0
2.0 3.0 4.0 5.0 6.0 7.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

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 IRLR8103VPbF
5000 6
VGS = 0V, f = 1MHz ID = 15A
Ciss = Cgs + Cgd , Cds SHORTED V DS= 24V

VGS , Gate-to-Source Voltage (V)

Crss = Cgd V DS= 15V
Coss = Cds + Cgd 5
4000
C, Capacitance (pF)

4
3000
Ciss
3
2000
Coss
2

1000
1
Crss
0 0
1 10 100 0 5 10 15 20 25 30
VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)

100 1000
ID , Drain Current (A)

TJ = 150° C
10us

10 100
100us
TJ = 25 ° C

1 10 1ms

10ms
TC = 25 °C
TJ = 150 °C
V GS = 0 V Single Pulse
0.1 1
0.0 0.4 0.8 1.2 1.6 2.0 2.4 1 10 100
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage

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 IRLR8103VPbF
RD
100 V DS

LIMITED BY PACKAGE VGS

D.U.T.
80 RG
+
V DD
ID , Drain Current (A)

10V
60
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

40 Fig 10a. Switching Time Test Circuit

VDS
20 90%

0
25 50 75 100 125 150
TC , Case Temperature ( ° C) 10%
VGS
td(on) tr t d(off) tf

Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature

10
Thermal Response(Z thJC )

1
D = 0.50

0.20

0.10 PDM
0.1 0.05 t1
0.02 SINGLE PULSE
(THERMAL RESPONSE) t2
0.01
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective

Effective Transient
Transient Thermal
Thermal Impedance,
Impedance, Junction-to-Case
Junction-to-Case

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IRLR8103VPbF
R DS ( on ) , Drain-to-Source On Resistance ( Ω )

0.016 0.014

R DS(on) , Drain-to -Source On Resistance ( Ω)

0.014
0.012

0.012
0.010
VGS = 4.5V ID = 15A
0.010

0.008
VGS = 10V
0.008

0.006 0.006
0.0 2.0 4.0 6.0 8.0
0 50 100 150 200 250 300 350
ID , Drain Current ( A ) VGS, Gate -to -Source Voltage (V)

Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage

Current Regulator
Same Type as D.U.T.

QG
50KΩ
VGS
12V .2µF
.3µF QGS QGD
+
V
D.U.T. - DS
VG
VGS

3mA Charge

IG ID
Current Sampling Resistors

Fig 14a&b. Basic Gate Charge Test Circuit and Waveform

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 IRLR8103VPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)

D-Pak (TO-252AA) Part Marking Information

EXAMPLE: T HIS IS AN IRFR120
PART NUMBER
WITH AS S EMBLY INTERNATIONAL
LOT CODE 1234 RECTIFIER IRFU120 DAT E CODE
AS S EMBLED ON WW 16, 1999 LOGO 916A YEAR 9 = 1999
IN THE AS S EMBLY LINE "A" 12 34 WEEK 16
LINE A
Note: "P" in as sembly line pos ition AS S EMBLY
indicates "Lead-Free" LOT CODE

OR
PART NUMBER
INT ERNAT IONAL
RECT IFIER IRFU120 DATE CODE
LOGO P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
12 34
YEAR 9 = 1999
AS S EMBLY WEEK 16
LOT CODE
A = AS S EMBLY S ITE CODE

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IRLR8103VPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL

16.3 ( .641 ) 16.3 ( .641 )

15.7 ( .619 ) 15.7 ( .619 )

12.1 ( .476 ) 8.1 ( .318 )

FEED DIRECTION FEED DIRECTION
11.9 ( .469 ) 7.9 ( .312 )

NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13 INCH

16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/04
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