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photodiode for the first time. High transconductance of the boxes, N, which covers the entire time series.

tire time series. As E is varied, a


integrated HEMT has resulted in improved receiver sensitivity curve of N ( E )results. The fractal dimension is given by’.’
and the obtained result suggests that an AlInAs/GalnAs
HEMT has great potential for high-performance optoelec-
tronic integrated receivers. D=-- d In N ( E )
d In E

H. NOBUHARA 9th August 1988 As mentioned, over a certain range of time scales this number
H. HAMAGUCHI
T. FUJI1
will have the property of 1 I D I2.
0. AOKI
M. MAKIUCHI
0. WADA 2oooo 1
Fujitsu Laboratories Ltd.
10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan

References
BORNHORST, c . , MLDISSEN, w., FIEDLER, F., KAISER, R., and
I 0000 4
KOWALSKY, w . : ‘Waveguide-integratedpin photodiode on InP’,
Electron. Lett., 1987, 23, pp. 2 4
CHANDRASEKHAR, S., CAMPBELL, JOE C., DENTAI, A. G., JOYNER, C. H.,
QUA, G. J., and SNELL, WILLIAM w.: ‘Integrated waveguide pin
photodetector by MOVPE regrowth’, Electron Device Lett., 1987,
EDL-8, pp. 512-514
MIURA, s., MIKAWA, T., FUJII, T., and WADA, 0.:‘High-speed mono-
lithic GaInAs pinFET’, Electron. Lett., 1988,24, pp. 394-395 0 1000 2000 3000 4000
SUZUKI, A,, ITOH, T., TERAKADO, T., KASAHARA, K., ASANO, K., a data polnt
INOMOTO, Y., ISHIHARA, H., TORIKAI, T., and FUJITA, s.: ‘Long-
wavelength pinFET receiver OEIC on a GaAs-on-InP hetero-
structure’, Electron. Lett., 1987, 23, pp. 954955
MISHRA, u. K., JENSEN, J. F., BROWN, A. s., BEAUBIEN, R. s., and 2oooo1
JELLOIAN, L. M.: ‘Ultra-high speed AIInAs-GaInAs HEMT tech-
nology’. International Electron Device Meeting 1987, Technical
Digest, pp. 879-880
NOBUHARA, H., MIURA, s., MAKIUCHI, M., and WADA, 0.:
gration technology for long-wavelength monolithic PD/FETs
‘Planar inte-
10000 -I
receiver’, Optoelectron. Deu. & Technol., 2, pp. 303-31 1

-10000 , , , , , , , , , , , , , , , ,
ADAPTIVE NONLINEAR FILTER USING 0 1000 2000 3000 4000
FRACTAL GEOMETRY b data polnt

Indexing terms: Filters, Adaptiuefiltets 2 0000


A new filter is described which uses fractal geometry in its
synthesis. The important characteristic of the filter is that it
allows some wanted high frequency parts of time series data
1
to pass while rejecting other unwanted parts of the data.

Introduction: It often happens in the analysis of time series


generated in the author’s field of turbulent flows that the
signal may be contaminated by high-frequency noise. At the
same time there may be high-frequency events which are real
in the data which would be lost by simple low-pass filtering of
the time series. Examples are shown in the tops of Figs. 1 and
2 which are samples of a real Rayleigh scattering trace from , )a o o o- 1 o
turbulent flame and a mathematically generated pulse train 0 1000 2000 3000 4000
contaminated with high-frequency noise. In Fig. 1 the spikes C data polnt a
are real events, but the ‘fuzz’ on the troughs is unwanted Fig. 1 Rayleigh scattering time series
photomultiplier shot noise. In Fig. 2 it is desired to clean up a Raw data of 4096 points
the tops and bottoms of the pulse train without losing the b Data filtered with a first order recursive lag filter
pulses. Another way of saying this is that large scale moves c Data filtered by adaptive fractal filter
are to be retained, even though they may be high-frequency
events, but small scale, high-frequency noise is to be removed. The number calculated by eqn. 1 can also be locally com-
For this purpose fractal geometry has proved useful. puted by dividing the time series into adjacent, but shorter
time series. Eqn. 1 is then applied to the individual but shorter
T h e o r y : Given a time series of single valued points x(t), the series. By direct calculation the large moves in Figs. l a and 2a
wiggles in the data allow themselves to fractal interpretation.’ have low fractal dimension and the ‘fuzz’ in the troughs of Fig.
That is, over a range of time scales larger than some minimum l a and the tops and bottoms of Fig. 2a have a high fractal
time but smaller than some maximum time the curve may dimension. This suggests use of any digital filter for which the
exhibit the property that its apparent dimension is greater filter parameters are adjusted based upon the local fractal
than the topological dimension of unity. There are many ways dimension. For illustrative purposes the results here are based
of calculating this apparent dimension, one being the calcu- upon adjustment of the single parameter a of a first order lag
lation of what is known as the fractal or similarity dimen- recursive filter when
sion.’ It is computed by overlaying the time series by a set of
boxes of width and height E and calculating the number of

1248 ELECTRONICS LETTERS 15th September 1988 Vol. 24 No. 19

_.
The procedure was to first calculate the overall D = D , for the Conclusion: A new adaptive nonlinear filter has been devel-
two traces. A fit to a, linear in D, was made which makes tl oped on the basis of some concepts in fractal geometry. It
large when D < D , and a low when D > D,. At D = D , , appears useful for time series data containing large, but high
a = 0.05 was arbitrarily chosen. frequency, moves in the data upon which is superimposed
some unwanted high frequency noise. The filter is computa-

2ooo1 tionally efficient, but requires some judgement in parameter


selection and underlying filter selection by the practitioner.

W. C. STRAHLE 9th August 1988


School of Aerospace Engineering
Georgia Institute of Technology
Atlanta, GA 30332, USA

References
1 MANDELBROT, B. B.: 'The fractal geometry of nature' (Freeman,
New York, 1977).pp. 1-59
2 HALSEY, T. c . , JENSEN, M. H., KADANOFF, L. P., PROPACCIA, I., and
-2 0 0 0 1 SHRAIMAN, B. I.: 'Fractal measures and their singularities: the char-
0 100 200 300 400 500 600 acterization of strange sets', Physical Rev. A, 1986, 33, pp. 1141-
a d a t a polnt 1151
3 TUKEY, I. w.: 'Exploratory data analysis' (Addison-Wesley,
Reading, 1977)
2oool

LOW THRESHOLD AlGaAs BH LASERS


FABRICATED BY ONE-STEP M O C V D

Indexing terms: Semiconductor lasers, Semiconductor growth,


Epitaxy and epitaxial growth
Buried-heterojunction (BH) AlGaAs lasers were fabricated by
-2000 one-step MOCVD epitaxial growth on an inverse mesa
0 100 200 300 400 500 600 etched GaAs substrate. A low threshold current of 6mA was
n data point obtained and the lasing wavelength was approximately
780nm. The laser beam shape was nearly circular with an
aspect ratio less than 1.3.

Introduction: Low threshold current AlGaAs semiconductor


lasers are in demand for compact disc players, and video disc
players, and other information processing systems. Optoelec-
tronic integrated circuits (OEIC) which consist of semicon-
ductor lasers and other electronic devices also require low
threshold lasers. Quantum well lasers have a low threshold
current density compared to conventional double hetero-
junction (DH) lasers,'.* but they are not yet sufficiently reli-
able. Although a BH structure is effective in realising a low
threshold current in conventional DH lasers, because of its
-2oocl I ' I ' I ' I ' I ' I tight confinement of current and the optical field in the lateral
0 100 200 300 400 500 600 d i r e ~ t i o nAlGaAs
,~ BH lasers have not achieved sufficient rel-
C data polnt iability, because they have been fabricated by a two-step epi-
taxial growth process which includes etching between the
Fig. 2 Pulse train time series with random arrival times and random
noise superimposed on the tops and bottoms
steps, exposing the active layer to air and causing oxidation.
We have developed a BH laser without exposing the active
a Raw data of 512 points layer to air using one-step metalorganic chemical vapour
b Data filtered by a median filter
c Fractally filtered data
deposition (MOCVD).

Results: In Fig. 1, the middle and bottom traces show the Fabrication: Fig. 1 shows an outline of the fabrication process.
results of a recursive filter with constant parameter a = 0.05 Trimethyl aluminium, trimethyl gallium, and arsine were used
and then a fractal filter. The purely recursive filter does the as sources of AI, Ga and As. Hydrogen selenide (Se) and
expected; while it reduces the noise in the troughs of the dimethylzinc (Zn) were used as dopants for the n- and p-type
curves, it destroys the peak heights. The physics of this situ- lasers, respectively. The growth temperature was 830°C. The
ation demand that the peaks be faithfully reproduced. The substrate used was a (100) oriented Si doped (1 x 10'8cm-3)
bottom trace is obtained by the adaptive fractal filter and is GaAs wafer. It was etched with a photoresist mask which had

-
seen to contain the desired effect. For the trace of Fig. 1,
D , 1.5.
Fig. 2 is even more revealing where the noisy pulse train is
5 pm wide stripes aligned parallel to (011) in a mixed solution
of ",OH and H,O,. Fig. l a indicates the etched substrate
with a ridge about 3pm wide and 1.6pm high. In Fig. 16, the
analysed. Here, for comparison, the well known nonlinear DH structure of n-cladding layer, active layer, and p-cladding
median filter3 result is shown. The median filter selects the layer (a triangular-prism-shaped growth region with surfaces
median value of a set of points to the left (prior time) and in the (111)B plane) was formed on top of the ridge. A
right (future time) of x(t). This filter does indeed catch the current-blocking layer was then formed over the surface of the
large moves but fails to get rid of the wiggles, whereas the substrate except for the ridge. This current-blocking layer had
fractal filter does an acceptable job. In addition, the fractal the same aluminium composition and carrier concentration as
filter involves a straightforward sequential calculation, the n-cladding layer. In Fig. IC, we see the growth of the
whereas the median filter requires a sorting operation. p-cladding layer and the p-cap GaAs layer.
ELECTRONICS LETTERS 15th September 1988 Vol. 24 No. 19 1249

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