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H. NOBUHARA 9th August 1988 As mentioned, over a certain range of time scales this number
H. HAMAGUCHI
T. FUJI1
will have the property of 1 I D I2.
0. AOKI
M. MAKIUCHI
0. WADA 2oooo 1
Fujitsu Laboratories Ltd.
10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
References
BORNHORST, c . , MLDISSEN, w., FIEDLER, F., KAISER, R., and
I 0000 4
KOWALSKY, w . : ‘Waveguide-integratedpin photodiode on InP’,
Electron. Lett., 1987, 23, pp. 2 4
CHANDRASEKHAR, S., CAMPBELL, JOE C., DENTAI, A. G., JOYNER, C. H.,
QUA, G. J., and SNELL, WILLIAM w.: ‘Integrated waveguide pin
photodetector by MOVPE regrowth’, Electron Device Lett., 1987,
EDL-8, pp. 512-514
MIURA, s., MIKAWA, T., FUJII, T., and WADA, 0.:‘High-speed mono-
lithic GaInAs pinFET’, Electron. Lett., 1988,24, pp. 394-395 0 1000 2000 3000 4000
SUZUKI, A,, ITOH, T., TERAKADO, T., KASAHARA, K., ASANO, K., a data polnt
INOMOTO, Y., ISHIHARA, H., TORIKAI, T., and FUJITA, s.: ‘Long-
wavelength pinFET receiver OEIC on a GaAs-on-InP hetero-
structure’, Electron. Lett., 1987, 23, pp. 954955
MISHRA, u. K., JENSEN, J. F., BROWN, A. s., BEAUBIEN, R. s., and 2oooo1
JELLOIAN, L. M.: ‘Ultra-high speed AIInAs-GaInAs HEMT tech-
nology’. International Electron Device Meeting 1987, Technical
Digest, pp. 879-880
NOBUHARA, H., MIURA, s., MAKIUCHI, M., and WADA, 0.:
gration technology for long-wavelength monolithic PD/FETs
‘Planar inte-
10000 -I
receiver’, Optoelectron. Deu. & Technol., 2, pp. 303-31 1
-10000 , , , , , , , , , , , , , , , ,
ADAPTIVE NONLINEAR FILTER USING 0 1000 2000 3000 4000
FRACTAL GEOMETRY b data polnt
_.
The procedure was to first calculate the overall D = D , for the Conclusion: A new adaptive nonlinear filter has been devel-
two traces. A fit to a, linear in D, was made which makes tl oped on the basis of some concepts in fractal geometry. It
large when D < D , and a low when D > D,. At D = D , , appears useful for time series data containing large, but high
a = 0.05 was arbitrarily chosen. frequency, moves in the data upon which is superimposed
some unwanted high frequency noise. The filter is computa-
References
1 MANDELBROT, B. B.: 'The fractal geometry of nature' (Freeman,
New York, 1977).pp. 1-59
2 HALSEY, T. c . , JENSEN, M. H., KADANOFF, L. P., PROPACCIA, I., and
-2 0 0 0 1 SHRAIMAN, B. I.: 'Fractal measures and their singularities: the char-
0 100 200 300 400 500 600 acterization of strange sets', Physical Rev. A, 1986, 33, pp. 1141-
a d a t a polnt 1151
3 TUKEY, I. w.: 'Exploratory data analysis' (Addison-Wesley,
Reading, 1977)
2oool
Results: In Fig. 1, the middle and bottom traces show the Fabrication: Fig. 1 shows an outline of the fabrication process.
results of a recursive filter with constant parameter a = 0.05 Trimethyl aluminium, trimethyl gallium, and arsine were used
and then a fractal filter. The purely recursive filter does the as sources of AI, Ga and As. Hydrogen selenide (Se) and
expected; while it reduces the noise in the troughs of the dimethylzinc (Zn) were used as dopants for the n- and p-type
curves, it destroys the peak heights. The physics of this situ- lasers, respectively. The growth temperature was 830°C. The
ation demand that the peaks be faithfully reproduced. The substrate used was a (100) oriented Si doped (1 x 10'8cm-3)
bottom trace is obtained by the adaptive fractal filter and is GaAs wafer. It was etched with a photoresist mask which had
-
seen to contain the desired effect. For the trace of Fig. 1,
D , 1.5.
Fig. 2 is even more revealing where the noisy pulse train is
5 pm wide stripes aligned parallel to (011) in a mixed solution
of ",OH and H,O,. Fig. l a indicates the etched substrate
with a ridge about 3pm wide and 1.6pm high. In Fig. 16, the
analysed. Here, for comparison, the well known nonlinear DH structure of n-cladding layer, active layer, and p-cladding
median filter3 result is shown. The median filter selects the layer (a triangular-prism-shaped growth region with surfaces
median value of a set of points to the left (prior time) and in the (111)B plane) was formed on top of the ridge. A
right (future time) of x(t). This filter does indeed catch the current-blocking layer was then formed over the surface of the
large moves but fails to get rid of the wiggles, whereas the substrate except for the ridge. This current-blocking layer had
fractal filter does an acceptable job. In addition, the fractal the same aluminium composition and carrier concentration as
filter involves a straightforward sequential calculation, the n-cladding layer. In Fig. IC, we see the growth of the
whereas the median filter requires a sorting operation. p-cladding layer and the p-cap GaAs layer.
ELECTRONICS LETTERS 15th September 1988 Vol. 24 No. 19 1249