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Prof. Ming C. Wu
wu@eecs.berkeley.edu
511 Sutardja Dai Hall (SDH)
Small-Signal Operation
MOSFET Small-Signal Model - Summary
IG = 0
Kn 2
ID = (VGS −VTN ) (1+ λVDS )
2
Transconductance:
gm = 2I D = 2K I
n D
• Since gate is insulated from VGS −VTN
channel by gate-oxide input
resistance of transistor is infinite. Output resistance:
• Small-signal parameters are
controlled by the Q-point. ro = 1 = 1+λVDS ≅ 1
• For the same operating point, go λID λID
MOSFET has lower
transconductance and an output Amplification factor for lVDS<<1:
resistance that is similar to the
BJT. 2Kn
µ f = gmro = 1+λVDS ≅ 1
λID λ ID
1
MOSFET Small-Signal Operation
Body Effect in Four-terminal MOSFETs
Drain current depends on threshold
voltage which in turn depends on vSB.
Back-gate transconductance is:
∂iD ∂iD
gmb = =−
∂vBS Q-point
∂vSB Q-point
# &# &
% ∂iD (% ∂VTN (
gmb =− % (% ( =−(−gmη)= gmη
%
$ ∂VTN ('%$ ∂vSB ('
Q-point
2
Common-Source Amplifiers
Small-Signal Analysis - ac Equivalent Circuit
Common-Source Amplifiers
Small-Signal Equivalent Circuit
vd
AvtCE = = −gm RL RL = ro RD R3
vg
3
Common-Source Amplifiers
Input Resistance and Signal-Source Gain
vg
Define RiG as the input resistance RiG = = RG
looking into the base of the transistor. ii
Rin is the resistance presented to vi Rin = RI + RG
Common-Source Amplifiers
“Rule of Thumb” Design Estimate
" RG %
AvCS = −gm RL $ CS
' ≅ Avt AvtCS = −gm RL RL = ro RD R3
# RI + RG &
I D RD
Typically: ro >> RD and R3 >> RD AvCS ≅ −gm RD = −
" VGS −VTN %
$ '
# 2 &
I D RD represents the voltage dropped across drain resistor RD
V
A typical design point is I D RD = DD with VGS −VTN = 1 V
2
∴ AvCS ≅ −VDD
4
Common-Source Amplifiers
Voltage Gain Example
• Problem: Calculate voltage gain, input
resistance and maximum input signal
level for a common-source amplifier with
a specified Q-point
• Given data: Kn = 0.50 mA/V2, VTN = 1 V,
• λ = 0.0133V-1, Q-point is (0.241 mA, 3.81 V)
• Assumptions: Transistor is in the active
region. Signals are low enough to be
considered small signals.
• Analysis:
λ −1 +VDS
gm = 2K n I D (1+ λVDS ) = 0.503 mS ro = = 328 kΩ
ID
RG = R1 R2 = 892 kΩ RL = ro RD R3 = 17.1 kΩ
Common-Source Amplifiers
Voltage Gain Example (cont.)
5
C-E and C-S Amplifiers
Output Resistance
6
BJT and FET Small-Signal Model Summary
Common-Emitter / Common-Source
Amplifiers Summary
7
Amplifier Power Dissipation
(a) Total power dissipated in BJT: (b) Total power dissipated in MOSFET:
PD = VCE IC + VBE IB PD = VDS ID
Total power supplied is:
Total power supplied is:
PS = VDD ( ID + I2 )
PS = VCC ( IC + I2 )