2SC3835

Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Application : Humidifier, DC-DC Converter, and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0

1.8
VCBO 200 V ICBO VCB=200V 100max 9.6 2.0±0.1

VCEO 120 V IEBO VEB=8V 100max µA

VEBO 8 V V(BR)CEO IC=50mA 120min V

19.9±0.3

4.0
a
IC 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 ø3.2±0.1
b
IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max V
PC 70(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V 2

4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz 3
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 110typ pF 1.05 +0.2
-0.1 0.65 +0.2
-0.1

■Typical Switching Characteristics (Common Emitter) 5.45±0.1 5.45±0.1 1.4

B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
50 16.7 3 10 –5 0.3 –0.6 0.5max 3.0max 0.5max b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )

7 2.6 7
A A
2 00m 1 50m
6 6
mA
100 2

Collector Current I C (A)

Collector Current I C (A)

5 5
60mA
A
4 40m 4

p)

mp)
Tem
5A

)
Temp
e Te
3 20 mA 3
3A

se
1
I C= 1

(Ca

(Cas

(Case
˚C
A

2 2

25˚C
125
I B =10mA

–30˚C
1 1

0 0 0
0 1 2 3 4 0.005 0.01 0.05 0.1 0.5 1 0 0.5 1.0 1.1
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =4V) (V C E =4V)
200 300 5
1 2 5 ˚C
DC C urrent G ain h FE

DC C urrent G ain h FE

Transient Thermal Resistance

Typ
100 C
25˚
100
˚C
–30
50
50 1

0.5
20 20 0.4
0.02 0.1 0.5 1 5 7 0.01 0.05 0.1 0.5 1 5 7 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
30 20 70
10
0µ
s
10
60
M aximu m Power Dissip ation P C (W)

5
Cut-o ff Fr equ ency f T (MH Z )

10

50
ith
Co lle ctor Cu rre nt I C (A)

ms

20
In
fin
ite

40
he

1
at
si
nk

30
0.5
10 Without Heatsink
Natural Cooling 20

10
0.1
Without Heatsink
3.5
0 0.05 0
–0.01 –0.05 –0.1 –0.5 –1 –5 5 10 50 120 200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

76