Nontrivial Field Effect Transistors:

Electron Optics with p-n Junctions in Graphene

นายเอกรัฐ ภัทรวุฒิวงศ์ รหัส 57090500714
วันเสาร์ที่ 14 ตุลาคม 2560 เวลา 9.00 – 16.00 น.

Abstract
Graphene is a two-dimensional Dirac material in which its crystal lattice made from
interconnected hexagon networks of carbon atoms. Due to linear dispersion relation with zero
band gap, quantum transport properties of the charge carrier in graphene is governed by
massless Dirac equation. By applying a gate voltage perpendicular to the graphene planes, it
can be doped to either n- or p-type semiconductor to form the p-n junction. The carriers
transmitted across a ballistic graphene junction through refraction, analogous to the ray of
light passes across the boundary between two media with different densities. Ballistic
electrons transport crossing a p-n junction in graphene can mimic electron-optic behavior such
as negative refraction and perfect Veselago lensing. The ability to manipulate electrons in
graphene behave like light is starting point for solving difficult problem of Klein tunneling in
entirely new ways of designing about novel electronics.

References
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2. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V.

Grigorieva, A. A. Firsov, 2004, Electric Field Effect in Atomically Thin Carbon Films, Science,
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