A p p l i c at i o n N o t e

AN3021
Renesas/CEL Optocoupler Thermal Calculation
Authors: Van N. Tran CEL Staff Application Engineer, Opto Semiconductors
Larry Sisken CEL Product Marketing Manager, Opto Semiconductors

Introduction Due to its unique construction for providing electrical

Heat is the number one killer of all electronic devices. isolation one needs to observe both derating curves
provided in the data sheet. The PS2801-1-A is used as the
The purpose of this Application Note is to “guide”, “teach”,
example in this app note however the same methodology is
and “educate” engineers or end users on how:
used for all other optocouplers including PS23xx, PS25xx,
1. To calculate the maximum case temperature that a PS27xx, PS28xx, and PS29xx.
particular optocoupler can withstand: Tcase<<<Tg
Thermal Resistance
(glass transition temperature of the resin with the
typical Tg=~150°C plus) and as a good practice, The ease or difficulty with which heat propagates is
the Tcase should be kept to less than or equal to called thermal resistance. Below is a table of the thermal
121°C, then it is acceptable. resistance from case to ambient, Rth(c-a) (°C/mW) of
Renesas optocouplers.
2. To calculate the Tj of the phototransistor and IRED
Part Number Thermal Resistance Rth (c-a) case to ambient (°C/mW)
and make sure that the Tj<<125°C. PS23xx 0.200

In this app note, three examples are given: PS25xx 0.170

PS27xx 0.312
Example #1 shows how to calculate the maximum Tcase. PS28xx 0.390
PS29xx 0.442
Example #2 shows how to calculate Tcase and Tj of IRED
and phototransistor based upon the “real” application in Let us examine the IRED and phototransistor derating
the analog mode. curves provided in the PS2801 data sheet as shown below
in figure 2.0.
Example #3 shows how to calculate Tcase and Tj of IRED
DIODE POWER DISSIPATION vs. TRANSIS
and phototransistor based upon the “real” application in AMBIENT TEMPERATURE vs. AMB
the digital mode. 100 200

Transistor Power Dissipation PC (mW)

Diode Power Dissipation PD (mW)

Background PS2801-4
75 150
The maximum power dissipation rating for an optocoupler
0.8 mW/°C
PS2801-1
is defined as the greatest amount of power that the 50 100 PS28
PS28
device can dissipate without exceeding safe operating 0.6 mW/°C
conditions. Optocouplers have a unique feature which is 25 50
not found in a typical semiconductor device in that there
are two electrically isolated components; an infrared
0 25 50 75 100 0
emitting diode (IRED) on one side of the lead frame and a
Ambient Temperature TA (°C) Am
phototransistor on the other side. Both components are
DIODE POWER DISSIPATION vs. TRANSISTOR POWER DISSIPATION
encapsulated inside a plastic package as shown
AMBIENT in the
TEMPERATURE FORWARD
vs. AMBIENT CURRENT vs.
TEMPERATURE COLLEC
figure 1.0 below. FORWARD VOLTAGE COLLEC
100 200
100 70
IF (mA) PC (mW)
Diode Power Dissipation PD (mW)

Photo Detector 50 TA = +100°C

PS2801-4 +60°C 60
75 150 +25°C
Collector Current IC (mA)
Dissipation

10 50
0.8 mW/°C
PS2801-1 5
50 40
Current

100 PS2801-1
PS2801-4 1.2 mW/°C 0°C
Power

0.6 mW/°C 30
1 –25°C
Forward

–55°C
25 50
0.5 20
Transistor

10
0.1
LED
0 25 50 75 100 0 25 50 75 100
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 2
Fig 1.0: Typical Construction of anAmbient Temperature TA (°C)
Optocoupler Ambient Temperature TA (°C)
Forward Voltage VF (V) Colle
FORWARD CURRENT vs. Fig 2.0: Derating
COLLECTOR curves of the
CURRENT vs. PS2801-1-A Page 1
FORWARD VOLTAGE COLLECTOR
COLLECTOR TOTOEMITTER
EMITTER DARK
VOLTAGE COLLECT
100
CURRENT vs. AMBIENT TEMPERATURE COLLECT
70
40
A)

50 TA = +100°C
 AN3021

First extend the derating curves so that the power allowable case temperature, Tc=Ta+Pt* Rth(c-a)=100°C+45
dissipation=0. mw *0.390°C/mW≈117.5°C. However, one should operate
the device lower than 117.5°C (110°C preferably) since the
In this example both the IRED and phototransistor have
calculated number is for reference only.
zero (0) power dissipation at TA=125°C. The interception of
the derating curves and the horizontal axis is the maximum As mentioned above the thermal resistances are Rth(j-
allowable junction temperature (TJ (max)) of both components. a)=1.667°C/mW for the IRED and Rth (j-a)=0.833°C/mW for
the phototransistor.
By taking the inverse of the slope of the derating curves, the
thermal impedance of the IRED and the phototransistor can By applying the formula junction temperature, Tj=Ta+Rth (j-
be found. The thermal impedance of the IRED=1.667°C/mW a) * P we get the following:
and that of the phototransistor=0.833°C/mW as shown in
1. IRED Junction temperature , TJ IRED=100°C+15mW*
figure 3.0.
1.667°C/mW=125°C (max).
DIODE POWER DISSIPATION vs. TRANSISTOR POWER DISSIPATION
AMBIENT TEMPERATURE
2. Phototransistor junction temperature, Tj phototransistor
vs. AMBIENT TEMPERATURE
100 200 =100°C+30mW * 0.833°C/mW=125°C (max).
Transistor Power Dissipation PC (mW)
Diode Power Dissipation PD (mW)

PS2801-4
3. Below is the summary diagram of the above example.
75 150
Photo Detector Tj = 125°C (max)
0.8 mW/°C
PS2801-1
50 100 PS2801-1 Keep the case temperature,
IRED power PS2801-4 1.2 mW/°C Tc<117.5°C
0.6 mW/°C
dissipation (</= 100°C as recommended)
25 (~15 mW)50

125°C
0 25 50 75 100 0 25 50 75 100

Ambient Temperature TA (°C) Temperature Ambient Temperature TA (°C)

Tj = 125°C (max) LED
limit by the
TRANSISTOR POWER DISSIPATION
FORWARD
vs. AMBIENT CURRENT vs.
TEMPERATURE COLLECTOR CURRENT vs.
package material
Fig 4.0
FORWARD VOLTAGE because of the COLLECTOR
Tg TO EMITTER VOLTAGE
200
100 (glass transition
70
IF (mA) PC (mW)

50 TA = +100°C temperature of the Example #2:

+60°C 60
molding material
150 +25°C Calculate the case temp. and junction temp. of the IRED
Collector Current IC (mA)
Dissipation

≈150°C plus)
10 50
5
and phototransistor (PD) in the analog mode (or Vce of the
40
mA Phototransistor is NOT in saturation).
Current

100 PS2801-1
PS2801-4 1.2 mW/°C 0°C
Phototransistor 50 A m
Power

1 –25°C 30
dissipation 20 mA
10 Using PS2801-1-A with the following drive condition in the
Forward

–55°C (~30 mW)

50
0.5 20
Transistor

IFcommon
= 5 mAcollector configuration as shown below in figure 5.0
10
0.1 125°C
with the operating temperature, Ta=25°C to 60°C.
00 0 25 50 75 100
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 2 4 6 IF 8 10
Ambient Temperature TA (°C)
Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) VCC
Fig 3.0: Typical
COLLECTOR Construction
CURRENT vs. of an Optocoupler
COLLECTOR
COLLECTOR TOTOEMITTER
EMITTER DARK
VOLTAGE COLLECTOR CURRENT vs. Ic
Example #1:
CURRENT vs. AMBIENT TEMPERATURE
70
COLLECTOR SATURATION VOLTAGE
40
Collector to Emitter Dark Current ICEO (nA)

VOUT
Calculate
60
10 000 the maximum case temperature based on the
VCE = 80 V
50 mA
20 mA Rin RL
Collector Current IC (mA)

derating 40 V
50 curves. 10 10 mA
Collector Current IC (mA)

24 V 5 mA
1 000
10 V 5 2 mA
In A the40worst
casemwithin the 5 V safe operating areas, the power Fig 5.0 Common Collector Amplifier
50 A
m
dissipation
30
100 of the20IRED
mA and phototransistor is roughly 15mW
IF = 1 mA
10
and 30mW
20
at Ta=100°C respectively. By summing 1these IRED side: IF=5.0mA, VF=1.1V (typ) or the power
IF = 5 mA
10
two numbers, the total power dissipation is Pt = 45mW 0.5 at consumption, P_IRED=5.5mW.
10
ambient temperature Ta=100°C.
1 Phototransistor side: Ic=10mA (CTR=200%), Vcc=3.3V and
5 0 2 4 6 8 10 0.1
Using the
–50 formula
–25 0 Rth(c-a)=(Tc–Ta)/Pt
25 50 75 100 with Ta=100°C,
0 0.2 RL=100Ω
0.4 0.6 and0.8 Vce=Vcc–Ic*RL=3.3V–10mA
1.0 *100Ω=2.3V and
Collector to Emitter Voltage VCE (V)
Pt=45mW, Ambient
and Temperature
Rth(c-a)=0.390°C/mW,
TA (°C) the maximum power
Collector Saturation consumption,
Voltage VCE (sat) (V) P_PD=10mA *2.3V=23mW.
COLLECTOR CURRENT vs.
Page 2
RE COLLECTOR SATURATION VOLTAGE
40
50 mA
 0.6 mW/°C

Diode Power

Transistor Po
25 50

0 25 50 75
AN3021
100 0

Ambient Temperature TA (°C)

At Ta=25°C: FORWARD CURRENT vs. COLLE

FORWARD VOLTAGE COLLE
The total power consumption is, Pt=P_IRED+P_PD=5.5mW 100 70
+ 23mW=28.5mW. 50 TA = +100°C
+60°C 60
+25°C

Collector Current IC (mA)

Forward Current IF (mA)
By applying the formula: Rth(c-a)=(Tc–Ta)/Pt at Ta=25°C, 10 50
Pt=28.5mW, and Rth(c-a)=0.390°C/mW. 5
40
0°C
The case temperature, Tc=Ta+Pt* Rth(c-a) =25°C+28.5mW 1 –25°C 30
–55°C
*0.390°C/mW=36.1°C. 0.5 20

By applying the formula for the junction temperature, Tj=Ta + 10

0.1
Rth(j-a) * P we get the following result:
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0

1. IRED Junction temperature , TJ IRED=25°C+5.5 mW* Forward Voltage VF (V) Co

1.667°C/mW=34.2°C. NORMALIZED
COLLECTOR TO CURRENT TRANSFER
EMITTER DARK CURR
COLLEC
RATIO vs. AMBIENT TEMPERATURE
CURRENT vs. AMBIENT TEMPERATURE FORW
COLLEC
2. Phototransistor junction temperature, Tj phototransistor 1.2 40

Collector to Emitter Dark Current ICEO (nA)

Normalized Current Transfer Ratio CTR
300 VCE = 5
=25°C+23mW * 0.833°C/mW=44.2°C. 10 000

CTR (%)
1.0 VCE = 80 V n=3
40 V 250
10

IC (mA)
In example #2, one can see that the Tj of the phototransistor 24 V
0.8
1 000 10 V Sam
200
5

Ratio
=44.2°C is a dominant factor that influences the case 5V

Current
0.6
temperature (Tc=36.1°C). 150

Transfer
100
0.4 1

Collector
100
At Ta=60°C:

Current
10 Normalized to 1.0 0.5
0.2 at TA = 25°C, 50
The issue becomes more complex and involved and the IF = 5 mA, VCE = 5 V
1
0.0
following steps need to be taken: –50 –25 0 25 50 75 100 0.1
0.02 0
–50 –25 0 25 50 75 100 0 0
Ambient Temperature TA (°C)
Step #1: Examine how the temperature affects the forward Ambient Temperature TA (°C) Colle

voltage of the IRED. SWITCHING

Fig 6.0 Forward Voltage and TIME vs.Temperature & CTR vs. Ta
Current vs. Ambient
LOAD RESISTANCE
By looking at the below graph of forward voltage and current Step# 4: Calculate
100 the junction temperature of IRED and1 000
V = 5 V, CC VCC = 5
50 I = 2 mA,
versus ambient temperature (Figure 6.0) one can see that VF phototransistor to make sure that they do not exceed Tj C IF = 5 m
CTR = 236% t f CTR = 2
≈1.05V @ IF=5.0mA and the power consumption, P_ IRED = (max)=125°C. 100

Switching Time t (μs)

Switching Time t (μ s)

10 tr
5.25mW.
By applying 5the formula for the junctiont
temperature, d
10
Step #2: Examine how the temperature affects the CTR. Tj=Ta+Rth(j-a) * P. The result is as follows:
ts
1
Similarly, reviewing the graph of Normalized CTR vs. Ta as 1. I RED Junction
0.5
temperature , TJ IRED=60°C+5.25mW* 1
shown below, the CTR≈0.85 * CTR at Ta=25°C. 1.667°C/mW≈68.8°C.
0.1 0.1
In this example, the CTR (at Ta=60°C)=0.85 *200%=170% or 2. Phototransistor
0.01 junction
0.05 0.1 temperature,
0.5 1 Tj5 phototransistor
10 0.1

Ic=8.5 mA instead of 10.0mA at Ta=25°C. =60°C+21mW * 0.833°C/mW=77.5°C.

Load Resistance R (kΩ) L

As a result, Vce=3.3V-8.5mA*100Ω=2.45V and power Based on the above calculation, the junction temperatures
FREQUENCY RESPONSE LONG
consumption, P_PD=8.5mA* 2.45V=21mW. of both the IRED and PD do not exceed the Tj (max)=125°C, 1.2
I = 5 mA,
so the drive condition of IF= 5.0mA, Vcc=3.3V,
V = 5 V and RL=100Ω
F

The total power consumption by the device is Pt=5.25mW+ 0 1.0

CE

is acceptable.
21mW=26.25mW.
CTR (Relative Value)
Normalized Gain Gv

–5 0.8
Again, the Tj of the phototransistor is a dominant factor that
Step #3: Calculate the case temperature, Tc.
–10case temperature, Tc.
influences the 0.6

By applying the formula: Rth(c-a)=(Tc– Ta)/Pt at Ta=60°C, –15

RL = 1 kΩ 100 Ω
0.4
Pt=26.25mW, and Rth(c-a)=0.390°C/mW, the case
–20 0.2
temperature, Tc=Ta+Pt* Rth(c-a)=60°C+ 26.25mW *0.390°C/
300 Ω
mW≈70.2°C. 0.5 1 2 5 10 20 50 100 200 500
0.0
10

The case temperature, Tc=70.2°C is less than 110°C as Frequency f (kHz)

recommended, so it is acceptable.
Page 3
 AN3021

Example #3:
Calculate the case temp. and junction temp. of the IRED
and phototransistor in the digital mode (or Vce of the
phototransistor is in saturation).
Using the same information from example #2 except that
load resistance is changed to 1.0KΩ: At Ta=25°C.
IRED side: IF=5.0 mA, VF=1.1V (typ) and the power
consumption, P_IRED=5.5mW.
Phototransistor side: Ic=10mA (CTR=200%), Vcc=3.3V and
RL=1KΩ.
To verify if the device is operating in digital mode with Vce
is in saturation, the multiplication of Ic and RL is taken, Ic
* RL=10.0V>>>Vcc=3.3V! so Ic=10mA is no longer valid.
Instead, the correct Ic=(Vcc-Vce(sat)*)/RL=(3.3V-0.3V)/1KΩ
=3.0 mA.
Note (*): Saturation voltage, Vce is provided in the data
sheet.
The power consumption, P_PD=3mA *0.3V=0.9mW.
The total power consumption, Pt=5.5 mW+0.9 mW=6.4mW.
By applying the formula: Rth(c-a)= (Tc–Ta)/Pt with Ta=25°C, Pt
=6.4mW, and Rth(c-a)=0.390°C/mW, the case temperature,
Tc=Ta+Pt* Rth(c-a)=25°C+6.4mW *0.39°C/mW≈27.5°C.
Step #2: Examine how the ambient temperature affects
the CTR.
As shown in example #2, the Ic=8.5mA and >Ic * RL=8.5V
>>>Vcc=3.3V! so Ic=8.5mA is no longer valid. Instead, the
correct Ic=(Vcc-Vce(sat)*)/RL=(3.3V -0.3V)/1KΩ=3.0mA.
Please look at the app. note, AN3020 for detailed info
regarding different approaches to operate in the digital
mode. The application note is posted at:
http://www.cel.com/appnotes.
do?command=showByType&group=2
Again, the power consumption, P_PD=3mA *0.3V=0.9mW.
The total power consumption, Pt=5.25mW+0.9mW=6.4mW.
By applying the formula: Rth(c-a)=(Tc–Ta)/Pt with Ta=60°C,
Pt=6.4mW, and Rth(c-a)=0.390°C/mW, the case temperature,
Tc=Ta + Pt* Rth(c-a)=60°C+6.4mW *0.390°C/mW=62.5°C.
The case temperature, Tc=62.5°C is less than 110°C as
recommended, so it is acceptable.
By applying the formula for the junction temperature, Tj=Ta
+Rth(j-a) * P where P is the power dissipation. The result is
as follows:
1. IRED Junction temperature , TJ IRED=60°C+5.25mW*
1.667°C/mW=68.8°C.

By applying the formula for the junction temperature, Tj=Ta + 2. Phototransistor junction temperature, Tj phototransistor
Rth(j-a) * P. The result is as follows: =60°C+0.9mW * 0.833°C/mW=60.7°C.

1. IRED Junction temperature , TJ IRED=25°C+5.5 mW* Based on the above calculation, the junction temperatures of
1.667°C/mW=34.2°C. both the IRED and phototransistor do not exceed the Tj (max)
=125°C. Again, the Tj of the IRED is the dominant factor that
2. Phototransistor junction temperature, Tj phototransistor
influences the case temperature.
=25°C+0.9mW * 0.833°C/mW=25.7°C.
Conclusion
In general, when the device is operating in the digital mode
the IRED junction temperature is a dominant factor because The reliability and performance of optocouplers are
the phototransistor, PD will consume less power due to Vce profoundly affected by thermal factors such as, operating
being in saturation. temperature, drive conditions and operating mode (analog
or digital). This application note describes methods for
At 60°C, here are the steps that need to be taken:
calculating the junction temperatures and case temperature
Step #1: Examine how the temperature affects the forward to ensure that the device is used properly.
voltage of the IRED.
By looking at Figure 6.0: Forward voltage and current versus
ambient temperature, one can see that VF=~1.05V @
IF=5.0mA> Power consumption, P_IRED=5.25mW.

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herein and makes no representations or warranties, expressed or implied, that such
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