TAMIR-E-NAU ACADEMY TAUNSA SHARIF

Entry Test (CH# 16+18)

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A. SELECT THE BEST ONE
1. The depletion layer in a P-N function is caused by
a. drift of holes b. diffusion of charge carriers
c. migration of impurity atoms d. drift of electrons
2. In the depletion region of an unbiased P-N function diode there are
a. only electrons b. only holes
c. both electrons and holes d. only fixed ions
3. Regarding P type and N type semiconductors, which of the following statements
is true
a. N type semiconductors have free electrons in majority
b. N type semiconductors have holes in majority
c. Holes and electrons are equals in both N type and P type
d. N type semiconductor has excess negative charge
4. In a P-N junction there is no appreciable current if
a. P type is mde +ve and N type –ve
b. a potential difference is applied across the function making P type negative
and N type positive
c. a potential difference is applied across the function
d. None
5. If the forward voltage in a semi-conductor diode increases, the width of depletion
layer
a. increases b. decreases
c. remains constant d. becomes zero
6. The width of the depletion layer in a P-N function diode
a. increases when a reverse bias is applied
b. increases when a forward bias is applied
c. decreases when a reverse bias is applied
d. remains the same, irrespective of the bias voltage
7. On increasing the reverse bias to a large value in a P-N function diode the
current
a. increases slowly b. increases suddenly
c. remains fixed d. decreases slowly
8. The magnitude of potential barrier for Si is
a. 0.3 V b. 0.7 V c. 0.5 volt d. 0.1 volt
9. A single diode can produce
a. only half wave rectification b. only full wave rectification
c. both a and b d. none
10. In a full wave rectifier the least number of diodes required is
a. 1 b. 2 c. 3 d. 4
11. In a bridge rectifier, the number of diodes required is
a. 1 b. 2 c. 3 d. 4
12. When NPN transistor is used as an amplifier then
a. electrons move from collector to emitter
b. electrons move from emitter to collector
c. electron move from collector to base
d. holes move from emitter to collector
13. The current gain B may be defined as
a. B = ΔIc / ΔIE for constant collector voltage in a common base arrangement
b. B = ΔIc / ΔIB at constant collector voltage in a common emitter circuit
c. B = ΔIE / ΔIB for constant emitter voltage in common emitter circuit
d. B = ΔIB / ΔIC for constant collector voltage in common emitter circuit
14. While using a transistor as an amplifier
a. the collector junction is forward biased and emitter junction in reverse biased
b. the collector junction in reverse biased and emitter junction in forward biased
c. both junction are forward and biased d. both are reverse biased
15. Reverse biasing a P-N junction offers
a. high resistance b. low resistance
c. zero resistance d. infinite resistance
16. In a junction diode the holes are due to
a. Protons b. Neutrons
c. extra electrons d. missing of electrons
17. In semiconductor diode the barrier potential offers opposition to only
a. majority carriers in both regions b. minority carriers in both regions
c. free electrons in N region d. holes in P region
18. In a PNP transistor, the P type crystal acts as
a. emitter only b. collector only
c. either emitter or collector d. neither emitter nor collector
19. In a typical transistor the collector current in
a. slightly less than the emitter current
b. slightly more than the emitter current
c. equal to the emitter current
d. equal to the base current
20. In a transistor, the value of the base current depends on
a. base thickness b. bias voltage
c. doping level of emitter base and collector d. all
21. The LED (i). is made from the semi conducting compound gallium as senide
phosphide (ii). Emits light when forward biased (iii). Emits light when reverse
biased
a. only i is true b. i and ii are true c. i and iii are true d. only iii is true
22. The magnitude of open loop again of an amplifier in the order of
a. 105 Ω b. 105 A c. 105 V d. 105
23. If V0 is the output voltage and Vi is the difference between non inverting and
inverting and inverting input voltages then the open loop gain of the amplifier will
be
a. A0L = V0 + Vi b. A0L = V0 – Vi
c. A0L = V0 / Vi d. A0L = V0 / Vi
24. Gain G of the inverting amplifier shows that the output signal
a. in 1800 out of phase with respect to input signal
b. in phase with respect to input signal
c. lies perpendicular to input signal
d. none
25. The Gain G of the non inverting amplifier can be expressed by
a. G = –R2/R1 b. G = 1 + R2/R c. g = R2/R1 d. none
26. An op amp will act as a inverting amplifier when the input signal is connected to
a. non inverting terminal (+) b. inverting terminal (–)
c. earthened wire d. all
27. LDR becomes essential when op amp is used as a
a. comparator b. inverter c. non inverter d. night switch
28. Out put resistance of a ap-amp in the resistance between
a. the positive and negative outputs b. the positive and negative inputs
c. the two positive inputs d. the two output terminal and ground
29. The Boolean algebra uses
a. two digits 0 and 1 b. two digits 1 and 2
c. two digits 0 and 2 d. 10 digits
30. An output 1 is obtained in AND gate when input terminals A and B are such that
a. A = 0 B = 0 b. A = 1 B = 1
c. A = 1 B = 0 d. A = 0 B = 1
31. An output 1 is obtained in nor gate when input terminals A and B are such that
a. A = 0 B = 0 b. A = 1 B = 1 c. A = 1 B = 0d. A = 0 B = 1
32. When an input signal 1 is applied to a not gate its output is
a. 1 b. 0 c. either 0 or 1 d. any positive value
33. When P-N function of photodiode is exposed to light its reverse current
a. increases with the intensity of light b. decreases with the intensity of light
c. remains constant d. first increases then decreases with intensity of light
34. A single silicon photovoltaic cell produces a small voltage of
a. 0.1 volt b. 0.3 volt c. 0.6 volt d. 0.9 v
35. Photodiode is operated in
a. forward biased b. reverse biased
c. some time forward biased and some times reverse biased
d. depending on the intensity of light d. none
36. In an LR circuit, the current attains its steady value quickly when
a. R is large and L is small b. L is large and R is small
c. both L and R are large d. none
37. The peak value of 220 V a.c mains is
a. 220 v b. 311 v c. 440 v d. none
38. An alternating current can not be used for
a. lighting b. heating
c. charging of battery d. generating mechanical energy
39. An inductive circuit has zero resistance when a.c voltage is applied across the
circuit. Then the current lags behind the applied voltage by an angle of
a. 300 b. 450 c. 900 d. 00
40. The inductive reactance of an inductor of 4/π H connected across an a.c source
of 25 Hz is
a. 200 Ω b. 300 Ω c. 400 Ω d. 500 Ω
41. Inductive reactance of an inductor of 5H in a d.c circuit is
a. zero b. 5 Ω c. 5 √2 Ω d. 5 √2 Ω
42. A inductor L and a resistance R are connected in series across an a.c source of
voltage if inductive reactance is √3 time the resistance R, then the impedance of
the circuit in
a. R ( 1 + √3) b. √3 R c. 4R d. 2R
43. In a series LCR ac circuit, the voltage loop across L is always
a. less than applied voltage b. more than applied voltage
c. can be less or equal to or more than applied voltage
d. always equal to the applied voltage
44. A capacitor is connected across an a.c source if a dielectric slab is inserted
between the plates then
a. current decreases because Xc increases
b. current increases because Xc decreases
c. current increases because Xc increases
d. Xc decreases
45. An ideal inductor
a. allows a.c but blocks d.c b. allows d.c but blocks d.c
c. blocks both a.c and d.c d. allows both a.c and d.c
46. An a.c circuit is maximum when the angular frequency of the a.c source is
a. 500 rad /sec b. 500 Hz c. 2 x 105 rad /sec d. 4000 Hz
47. Which of the following electromagnetic radiations has the smallest wavelength
a. γ rays b. X rays c. microwaves d. U-V rays
48. Choose the highest freq. wave
a. infrared rays b. visible light c. radio waves d. micro waves
49. A radio can tune itself to any station in 5 MHz to 15 MHz bond. What in the
corresponding wavelength band
a. 60 m to 20 m b. 80 m to 40 m
c. 70 m to 50 m d. 65 m to 25 m
50. Velocity of light is given by
a. √μ0 ε0 b. 1/ √μ0 ε0 c. μ0/ ε0 d. ε0/μ0