Freescale Semiconductor Document Number: MHVIC915NR2

Technical Data Rev. 9, 5/2006

RF LDMOS Wideband Integrated

Power Amplifier
The MHVIC915NR2 wideband integrated circuit is designed with on - chip MHVIC915NR2
matching that makes it usable from 750 to 1000 MHz. This multi - stage
structure is rated for 26 to 28 Volt operation and covers all typical cellular base
station modulation formats.
Final Application
• Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 =
80 mA, IDQ2 = 120 mA, Pout = 34 dBm, Full Frequency Band (746 to 746 - 960 MHz, 15 W, 27 V
960 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) SINGLE N - CDMA, GSM/GSM EDGE
Power Gain — 31 dB RF LDMOS WIDEBAND
Power Added Efficiency — 21% INTEGRATED POWER AMPLIFIER
ACPR @ 750 kHz Offset — - 50 dBc in 30 kHz Bandwidth
Driver Applications
• Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 = 80
16
mA, IDQ2 = 120 mA, Pout = 23 dBm, Full Frequency Band (869 -
894 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13),
1
Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%
Probability on CCDF. CASE 978 - 03
Power Gain — 31 dB PFP - 16
Power Added Efficiency — 21% PLASTIC
ACPR @ 750 kHz Offset — - 60 dBc in 30 kHz Bandwidth
ACPR @ 1.98 MHz Offset — - 66 dBc in 30 kHz Bandwidth
• Typical GSM Performance: VDD = 26 Volts, Pout = 15 W P1dB, Full
Frequency Band (921 - 960 MHz)
Power Gain — 30 dB @ P1dB
Power Added Efficiency = 56% @ P1dB
• Capable of Handling 3:1 VSWR, @ 27 Vdc, 880 MHz, 15 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >9 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
• On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.

VRD1 N.C. 1 16 N.C.

VRG1 VRD1 2 15 VDS2/RFout
VRG1 3 14 VDS2/RFout
VDS1
2 Stage IC VDS1 4 13 VDS2/RFout
GND 5 12 VDS2/RFout
RFin VDS2/RFout RFin 6 11 VDS2/RFout
VGS1 7 10 VDS2/RFout
VGS2 8 9 N.C.
VGS1
Quiescent Current
Temperature Compensation (Top View)
VGS2
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Block Diagram Figure 2. Pin Connections

1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.

© Freescale Semiconductor, Inc., 2006. All rights reserved. MHVIC915NR2

RF Device Data
Freescale Semiconductor 1
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain- Source Voltage VDSS - 0.5, +65 Vdc
Gate- Source Voltage VGS - 0.5, +15 Vdc
Storage Temperature Range Tstg - 65 to +150 °C
Operating Junction Temperature TJ 150 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value (1) Unit
Thermal Resistance, Junction to Case RθJC °C/W

Driver Application Stage 1, 27 Vdc, IDQ = 80 mA 15.1

(Pout = 0.2 W CW) Stage 2, 27 Vdc, IDQ = 120 mA 5.1

Output Application Stage 1, 27 Vdc, IDQ = 80 mA 15.8

(Pout = 2.5 W CW) Stage 2, 27 Vdc, IDQ = 120 mA 5.0

GSM Application Stage 1, 26 Vdc, IDQ = 50 mA 13.8

(Pout = 15 W CW) Stage 2, 26 Vdc, IDQ = 140 mA 4.5

Table 3. ESD Protection Characteristics

Test Methodology Class
Human Body Model (per JESD22 - A114) 0 (Minimum)
Machine Model (per EIA/JESD22 - A115) A (Minimum)
Charge Device Model (per JESD22 - C101) II (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020 3 260 °C

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 27 Vdc, IDQ1 = 80 mA, IDQ2 = 120 mA, f = 880 MHz, Single - Carrier
N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ ±750 MHz. PAR = 9.8 dB @ 0.01% Probability
on CCDF
Power Gain (Pout = 23 dBm) Gps 29 31 — dB
Power Added Efficiency (Pout = 34 dBm) PAE — 21 — %
Input Return Loss (Pout = 23 dBm) IRL — - 12 -9 dB
Adjacent Channel Power Ratio (Pout = 23 dBm) ACPR — - 60 - 55 dBc
Adjacent Channel Power Ratio (Pout = 34 dBm) ACPR — - 50 — dBc
Gain Flatness @ Pout = 23 dBm (865 MHz to 895 MHz) GF — 0.2 0.4 dB
Bias Sense FET Drain Current IBSD 0.8 1.2 1.6 mA
VBSD = 27 V
VBIAS BSG = VBIAS2 Q2 @ IDQ2 = 120 mA
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)

MHVIC915NR2
RF Device Data
2 Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances (In Freescale Test Fixture, 50 οhm system) VDD = 27 Vdc, IDQ1 = 80 mA, IDQ2 = 120 mA, 865 - 895 MHz
Quiescent Current Accuracy over Temperature ( - 10 to 85°C) at Nominal Value (1) ΔIQT — ±5 — %
Gain Flatness in 30 MHz Bandwidth @ Pout = 23 dBm (800 MHz to 960 MHz) GF — 0.20 — dB
Deviation from Linear Phase in 30 MHz Bandwidth @ Pout = 23 dBm Φ — ±0.2 — °
Group Delay @ Pout = 23 dBm Including Output Matching Delay — 2.2 — ns
Part to Part Phase Variation @ Pout = 23 dBm ΦΔ — ±10 — °
Typical GSM Performances (In Freescale GSM Test Fixture, 50 οhm system) VDD = 26 Vdc, IDQ1 = 50 mA, IDQ2 = 140 mA,
921- 960 MHz, CW
Output Power, 1 dB Compression Point P1dB — 15 — W
Power Gain @ P1dB Gps — 30 — dB
Power Added Efficiency @ P1dB PAE — 56 — %
Input Return Loss @ P1dB IRL — - 16 — dB
Error Vector Magnitude @ 5 W — — 0.9 — %
Intermodulation Distortion IMD — - 30 — dBc
(15 W PEP, 2 - Tone, 100 kHz Tone Spacing)
Power Added Efficiency (15 W PEP, 2 - Tone, 100 kHz Tone Spacing) PAE — 35 — %
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes - AN1977.

MHVIC915NR2
RF Device Data
Freescale Semiconductor 3
 VBSD

VBIAS BSG
R5 1 NC NC 16

Z11 2 15 Z7
VD1 + VD2
C8 C7 3 14 C4 C5 C6

RF 4 13 Z6
INPUT RF
Z1 OUTPUT
5 12 Z2 Z3 Z4 Z5

6 11 C1 C2
Z8
7 Quiescent Current 10
C13 VGS1 Temperature Compensation
8 NC 9
Z12 C3
VBIAS1
R1 C11 R3 C12
Z9
Z10

VGS2
VBIAS2
R2 C10 R4 C9

Z1 0.0438″ x 0.400″ 50 Ω Microstrip Z7 0.0504″ x 0.480″ Microstrip

Z2 0.1709″ x 0.1004″ Microstrip Z8 0.0252″ x 0.843″ Microstrip
(not including IC pad length) Z9 0.0252″ x 0.167″ Microstrip
Z3 0.1222″ x 0.1944″ Microstrip Z10 0.040″ x 0.850″ Microstrip
Z4 0.0836″ x 0.3561″ Microstrip Z11 0.025″ x 0.400″ Microstrip
Z5 0.0438″ x 0.2725″ Microstrip Z12 0.020″ x 0.710″ Microstrip
Z6 0.0504″ x 0.3378″ Microstrip PCB Rogers 4350, 0.020″, εr = 3.50

Figure 3. MHVIC915NR2 Test Circuit Schematic

Table 6. MHVIC915NR2 Test Circuit Component Designations and Values

Part Description Part Number Manufacturer
C1, C2 4.7 pF High Q Capacitors (0603) ATC600S4R7CW ATC
C3, C4 47 pF NPO Capacitors (0805) GRM40- 001COG470J050BD Murata
C5, C8, C10, C11 1 μF X7R Chip Capacitors (1214) GRM42- 2X7R105K050AL Murata
C6 10 μF, 50 V Electrolytic Capacitor ECEV1HA100SP Panasonic
C7, C9, C12 0.01 μF X7R Chip Capacitors (0805) GRM40X7R103J050BD Murata
C13 8.2 pF NPO Chip Capacitor (0805) GRM40- 001COG8R2C050BD Murata
R1, R2, R5 1 kW Chip Resistors (0603) RM73B2AT102J KOA Speer
R3, R4 100 kW Chip Resistors (0603) RM73B2AT104J KOA Speer

MHVIC915NR2
RF Device Data
4 Freescale Semiconductor
 MHVIC915 VBIAS BSG VBSD
Rev 0 VD1 VD2

R5

C6

C8
C4 C5

C7

C2
C1

C13

C3

C9
R4

C12 C10
R3 R2

C11

R1 VBIAS1 VBIAS2

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These
changes will have no impact on form, fit or function of the current product.

Figure 4. MHVIC915NR2 Test Circuit Component Layout

MHVIC915NR2
RF Device Data
Freescale Semiconductor 5
 TYPICAL CHARACTERISTICS (FREESCALE TEST FIXTURE, 50 OHM SYSTEM)

35 50
25_C

PAE, POWER ADDED EFFICIENCY (%)

34 45
TC = −30_C
40 85_C
33
G ps , POWER GAIN (dB)

35
32
25_C
30
31
25
30
20
29 85_C 15
28 10
27 VDD = 26 Vdc, IDQ1 = 50 mA, VDD = 26 Vdc, IDQ1 = 50 mA,
5
IDQ2 = 140 mA, f = 880 MHz IDQ2 = 140 mA, f = 880 MHz
26 0
0.1 1 10 100 0.1 1 10 100
Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power Figure 6. Power Added Efficiency versus
Output Power

35 22
TC = −30_C
PAE, POWER ADDED EFFICIENCY (%)
34
21.5
G ps , POWER GAIN (dB)

33
25_C 21
32

31 20.5 TC = −30_C
VDD = 26 Vdc, Pout = 2.5 W
30
IDQ1 = 50 mA, IDQ2 = 140 mA
85_C 20 25_C
29 VDD = 26 Vdc, Pout = 2.5 W
IDQ1 = 50 mA, IDQ2 = 140 mA 85_C
28 19.5
750 800 850 900 950 1000 750 800 850 900 950 1000
f, FREQUENCY (MHz) f, FREQUENCY (MHz)
Figure 7. Power Gain versus Frequency Figure 8. Power Added Efficiency versus
Frequency

1.2 −60
SPECTRAL REGROWTH @ 400 kHz (dBc)
EVM, ERROR VECTOR MAGNITUDE (%)

1.1 −62
TC = −30_C 25_C
TC = −30_C −64
1
−66
0.9 85_C
25_C −68
0.8 85_C −70

0.7 −72
−74
0.6
−76
0.5 VDD = 26 Vdc, IDQ1 = 50 mA, −78 VDD = 26 Vdc, IDQ1 = 50 mA,
IDQ2 = 140 mA, f = 880 MHz IDQ2 = 140 mA, f = 880 MHz
0.4 −80
0 1 2 3 4 5 6 0 1 2 3 4 5 6
Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS)
Figure 9. Error Vector Magnitude versus Figure 10. Spectral Regrowth @ 400 kHz
Output Power versus Output Power

MHVIC915NR2
RF Device Data
6 Freescale Semiconductor
 TYPICAL CHARACTERISTICS (FREESCALE TEST FIXTURE, 50 OHM SYSTEM)

−76.5 −20

IMD, INTERMODULATION DISTORTION (dBc)

SPECTRAL REGROWTH @ 600 kHz (dBc)
TC = −30_C
−77
−25
−77.5 3rd Order
25_C
−78 −30
VDD = 26 Vdc, Pout = 7.5 W (Avg.)
−78.5 −35
85_C IDQ1 = 50 mA, IDQ2 = 140 mA, f = 880 MHz
−79 5th Order
−40
−79.5
−80 −45
−80.5
−50 7th Order
−81 VDD = 26 Vdc, IDQ1 = 50 mA,
IDQ2 = 140 mA, f = 880 MHz
−81.5 −55
0 1 2 3 4 5 6 0.1 1 10 100
Pout, OUTPUT POWER (WATTS) TONE SPACING (MHz)
Figure 11. Spectral Regrowth @ 600 kHz Figure 12. Two - Tone Broadband Performance
versus Output Power

33 32.5
Pin = 0.275 mW
32 32
Pin = 1 mW
31 31.5
G ps , POWER GAIN (dB)

G ps , POWER GAIN (dB)

2 mW 31
30 0.14 mW
0.07 mW
30.5
29
30
28
3 mW 29.5
27
29
26 IDQ1 = 50 mA, IDQ2 = 140 mA IDQ1 = 50 mA, IDQ2 = 140 mA
f = 880 MHz 28.5
f = 880 MHz
25 28
5 10 15 20 25 30 35 5 10 15 20 25 30 35
VDD, SUPPLY VOLTAGE (V) VDD, SUPPLY VOLTAGE (V)

Figure 13. Power Gain versus Supply Voltage Figure 14. Power Gain versus Supply Voltage

−5 −35
VDD = 26 Vdc, IDQ1 = 50 mA,
IDQ2 = 140 mA, f = 880 MHz
IRL, INPUT RETURN LOSS (dB)

−10 −40 N−CDMA IS−95 Pilot, Sync, Paging,

Traffic Codes 8 Through 13
TC = −30_C
ACPR (dBc)

−15 −45

25_C TC = 85_C
−20 −50
85_C
25_C
−25 −55
VDD = 26 Vdc, IDQ1 = 50 mA,
IDQ2 = 140 mA, f = 880 MHz −30_C
−30 −60
0.1 1 10 100 0 1 2 3 4 5 6
Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS)

Figure 15. Input Return Loss versus Output Figure 16. Adjacent Channel Power Ratio
Power versus Output Power

MHVIC915NR2
RF Device Data
Freescale Semiconductor 7
 Zo = 50 Ω

Zload

Zin
f = 750 MHz f = 960 MHz

f = 960 MHz
f = 750 MHz

VDD = 26 Vdc, IDQ1 = 50 mA, IDQ2 = 140 mA, Pout = 1.25 W CW

f Zin Zload
MHz Ω Ω

750 42.11 - j2.79 8.24 + j5.33

765 40.86 - j1.37 8.31 + j5.56

Zin = Device input impedance as measured from
780 40.09 + j0.06 8.39 + j5.82 RF input to ground.
795 39.77 + j1.52 8.50 + j5.95
Zload = Test circuit impedance as measured
810 39.89 + j3.01 8.62 + j6.02 from drain to ground.

825 40.49 + j4.39 8.82 + j6.12

Device Output
840 41.48 + j5.70 8.94 + j6.19 Under Test Matching
Network
855 42.89 + j6.73 9.12 + j6.17

870 43.51 + j7.03 9.16 + j6.12

885 46.81 + j7.87 9.33 + j6.09

Z Z
900 49.21 + j7.74 9.38 + j5.95 in load

915 51.79 + j7.02 9.50 + j5.85

930 54.48 + j5.65 9.47 + j5.73

945 57.05 + j3.61 9.54 + j5.63

960 59.16 + j0.75 9.42 + j5.45

Figure 17. Series Equivalent Input and Load Impedance

MHVIC915NR2
RF Device Data
8 Freescale Semiconductor
 DRIVER/PRE- DRIVER PERFORMANCE

VBSD

VBIAS BSG
R5 1 NC NC 16

Z11 2 15 Z7
VD1 + VD2
C8 C7 3 14 C4 C5 C6

RF 4 13 Z6
INPUT RF
Z1 OUTPUT
5 12 Z2 Z3 Z4 Z5

6 11 C1 C2
Z8
7 Quiescent Current 10
C13 VGS1 Temperature Compensation
8 NC 9
Z12 C3
VBIAS1
R1 C11 R3 C12
Z9
Z10

VGS2
VBIAS2
R2 C10 R4 C9

Z1 0.0438″ x 0.400″ 50 Ω Microstrip Z7 0.0504″ x 0.480″ Microstrip

Z2 0.1709″ x 0.1004″ Microstrip Z8 0.0252″ x 0.843″ Microstrip
(not including IC pad length) Z9 0.0252″ x 0.167″ Microstrip
Z3 0.1222″ x 0.1944″ Microstrip Z10 0.040″ x 0.850″ Microstrip
Z4 0.0836″ x 0.3561″ Microstrip Z11 0.025″ x 0.400″ Microstrip
Z5 0.0438″ x 0.2725″ Microstrip Z12 0.020″ x 0.710″ Microstrip
Z6 0.0504″ x 0.3378″ Microstrip PCB Rogers 4350, 0.020″, εr = 3.50

Figure 18. MHVIC915NR2 Test Fixture Schematic—

Alternate Characterization for Driver/Pre - Driver Performance

Table 7. MHVIC915NR2 Test Fixture Component Designations and Values —

Alternate Characterization for Driver/Pre - Driver Performance
Part Description Part Number Manufacturer
C1, C2 2.4 pF High Q Capacitors (0603) ATC600S4R7CW ATC
C3, C4 47 pF NPO Capacitors (0805) GRM40- 001COG470J050BD Murata
C5, C8, C10, C11 1 μF X7R Chip Capacitors (1214) GRM42- 2X7R105K050AL Murata
C6 10 μF, 50 V Electrolytic Capacitor ECEV1HA100SP Panasonic
C7, C9, C12 0.01 μF X7R Chip Capacitors (0805) GRM40X7R103J050BD Murata
C13 8.2 pF NPO Chip Capacitor (0805) GRM40- 001COG8R2C050BD Murata
R1, R2, R5 1 kW Chip Resistors (0603) RM73B2AT102J KOA Speer
R3, R4 100 kW Chip Resistors (0603) RM73B2AT104J KOA Speer

MHVIC915NR2
RF Device Data
Freescale Semiconductor 9
 DRIVER/PRE- DRIVER PERFORMANCE

MHVIC915 VBIAS BSG VBSD

Rev 0 VD1 VD2

R5

C6

C8
C4 C5

C7

C2
C1

C13

C3

C9
R4

C12 C10
R3 R2

C11

R1 VBIAS1 VBIAS2

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These
changes will have no impact on form, fit or function of the current product.

Figure 19. MHVIC915NR2 Test Circuit Component Layout—

Alternate Characterization for Driver/Pre - Driver Performance

MHVIC915NR2
RF Device Data
10 Freescale Semiconductor
 TYPICAL CHARACTERISTICS
DRIVER/PRE- DRIVER PERFORMANCE

ACPR, ADJACENT CHANNEL POWER RATIO (dBc)

−46
VDD = 27 Vdc
−48 IDQ1 = 120 mA, IDQ2 = 140 mA
f = 880 MHz
−50 N−CDMA IS−95 Pilot, Sync, Paging,
Traffic Codes 8 Through 13
−52
ACPR
−54

−56

−58

−60
System Noise Floor
−62
20 22 24 26 28 30 32
Pout, OUTPUT POWER (dBm)
Figure 20. Single - Carrier N - CDMA ACPR
versus Output Power

MHVIC915NR2
RF Device Data
Freescale Semiconductor 11
 f = 750 MHz

f = 960 MHz

Zload

Zo = 50 Ω

f = 960 MHz

Zin
f = 750 MHz

VDD = 27 Vdc, IDQ1 = 120 mA, IDQ2 = 140 mA, Pout = 0.5 W CW

f Zin Zload
MHz Ω Ω

750 43.5 - j13.4 4.7 + j41.5

765 42.9 - j13.9 5.5 + j43.8

Zin = Device input impedance as measured from
780 42.7 - j14.2 6.0 + j43.7 RF input to ground.

795 42.3 - j15.9 6.8 + j42.8 Zload = Test circuit impedance as measured
from drain to ground.
810 42.7 - j16.0 7.5 + j42.2

825 44.5 - j10.5 7.8 + j40.5 Output

Device
840 45.5 - j7.0 7.2 + j39.2 Under Test Matching
Network
855 45.0 - j6.5 6.3 + j38.4

870 45.0 - j4.5 6.4 + j38.7

885 46.0 - j1.5 7.9 + j38.5

Z Z
in load
900 48.3 + j2.4 9.3 + j36.8

915 49.5 + j7.3 9.4 + j35.3

930 49.6 + j7.8 8.6 + j34.5

945 49.8 + j8.4 7.8 + j34.3

960 49.5 + j8.6 7.6 + j34.3

Figure 21. Series Equivalent Input and Load Impedance —

Alternate Characterization for Driver/Pre - Driver Performance
MHVIC915NR2
RF Device Data
12 Freescale Semiconductor
 NOTES

MHVIC915NR2
RF Device Data
Freescale Semiconductor 13
 NOTES

MHVIC915NR2
RF Device Data
14 Freescale Semiconductor
 PACKAGE DIMENSIONS

h X 45 _ A
E2

1 16 NOTES:
1. CONTROLLING DIMENSION: MILLIMETER.
2. DIMENSIONS AND TOLERANCES PER ASME
14 x e

Y14.5M, 1994.
D D1 3. DATUM PLANE −H− IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
e/2

THE BOTTOM OF THE PARTING LINE.

4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD
8 9 PROTRUSION. ALLOWABLE PROTRUSION IS
0.250 PER SIDE. DIMENSIONS D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
E1 B DETERMINED AT DATUM PLANE −H−.
BOTTOM VIEW 5. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
8X E PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE
b DIMENSION AT MAXIMUM MATERIAL
bbb M C B S CONDITION.

ÉÉ
ÇÇÇ
b1 6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.

ÇÇÇ
ÉÉ
Y
c c1 MILLIMETERS
A A2
DIM MIN MAX
A 2.000 2.300
b A1 0.025 0.100
DATUM A2 1.950 2.100
H PLANE aaa M C A S D 6.950 7.100
SEATING D1 4.372 5.180
C PLANE E 8.850 9.150
SECT W - W E1 6.950 7.100
E2 4.372 5.180
L 0.466 0.720
L1 0.250 BSC
b 0.300 0.432
L1

b1 0.300 0.375
ccc C q W c 0.180 0.279
GAUGE c1 0.180 0.230
PLANE e 0.800 BSC
W h −−− 0.600
q 0_ 7_
L A1 aaa 0.200
bbb 0.200
1.000 ccc 0.100
0.039

DETAIL Y

CASE 978 - 03
ISSUE C
PFP - 16
PLASTIC

MHVIC915NR2
RF Device Data
Freescale Semiconductor 15
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