Alfa-MOS AFN3458

60V N-Channel
Technology Enhancement Mode MOSFET

General Description Features

AFN3458, N-Channel enhancement mode
60V/5.6A,RDS(ON)=60mΩ@VGS=10V

MOSFET, uses Advanced Trench Technology
60V/3.8A,RDS(ON)=66mΩ@VGS=4.5V
to provide excellent RDS(ON), low gate charge.

Super high density cell design for extremely
These devices are particularly suited for low
low RDS (ON)
voltage power management, such as smart

Exceptional on-resistance and maximum DC
phone and notebook computer and other
current capability
battery powered circuits, and low in-line power

TSOP-6 package design
loss are needed in commercial industrial
surface mount applications.

Pin Description ( TSOP-6 )

Application

Portable Equipment

Battery Powered System

Net Working System

Pin Define
Pin Symbol Description
1 D Drain
2 D Drain
3 G Gate
4 S Source
5 D Drain
6 D Drain

Ordering Information
Part Ordering No. Part Marking Package Unit Quantity
AFN3458TS6RG 58YW TSOP-6 Tape & Reel 3000 EA

 58 parts code

 Y year code ( 0 ~ 9 )

 W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )

 AFN3458TS6RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free

©Alfa-MOS Technology Corp. www.alfa-mos.com

Rev.A May 2012 Page 1
 Alfa-MOS AFN3458
60V N-Channel
Technology Enhancement Mode MOSFET

Absolute Maximum Ratings

(TA=25
Unless otherwise noted)
Parameter Symbol Typical Unit
Drain-Source Voltage VDSS 60 V
Gate –Source Voltage VGSS ±20 V
TA=25
5.6
Continuous Drain Current(TJ=150
) ID A
TA=70
3.8
Pulsed Drain Current IDM 20 A
Continuous Source Current(Diode Conduction) IS 1.6 A
TA=25
2.0
Power Dissipation PD W
TA=70
1.3
Operating Junction Temperature TJ 150

Storage Temperature Range TSTG -55/150

Thermal Resistance-Junction to Ambient RθJA 120
/W

Electrical Characteristics
(TA=25
Unless otherwise noted)
Parameter Symbol Conditions Min. Typ Max. Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 60
V
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 1.0 2.0
Gate Leakage Current IGSS VDS=0V,VGS=±12V ±100 nA
VDS=48V,VGS=0V 1
Zero Gate Voltage Drain Current IDSS VDS=48V,VGS=0V uA
10
TJ=85

On-State Drain Current ID(on) VDS5V,VGS=10V 6 A
VGS=10V,ID=5.6A 50 60
Drain-Source On-Resistance RDS(on) mΩ
VGS=4.5V,ID=3.8A 55 66
Forward Transconductance gFS VDS=15V,ID=3.2A 15 S
Diode Forward Voltage VSD IS=2.5A,VGS=0V 0.85 1.2 V
Dynamic
Total Gate Charge Qg 6 12
VDS=30V,VGS=4.5V
nC
Gate-Source Charge Qgs ID≡3.2A 1.5
Gate-Drain Charge Qgd 1.2
Input Capacitance Ciss 400
VDS=30V,VGS=0V
Output Capacitance Coss 40 pF
f=1MHz
Reverse Transfer Capacitance Crss 20
td(on) 8 15
Turn-On Time VDD=30V,RL=12Ω
tr 10 20
ID≡2.5A,VGEN=10V ns
td(off) RG=1Ω 25 40
Turn-Off Time
tf 10 20

©Alfa-MOS Technology Corp. www.alfa-mos.com

Rev.A May 2012 Page 2
 Alfa-MOS AFN3458
60V N-Channel
Technology Enhancement Mode MOSFET

Typical Characteristics

©Alfa-MOS Technology Corp. www.alfa-mos.com

Rev.A May 2012 Page 3
 Alfa-MOS AFN3458
60V N-Channel
Technology Enhancement Mode MOSFET

Typical Characteristics

©Alfa-MOS Technology Corp. www.alfa-mos.com

Rev.A May 2012 Page 4
 Alfa-MOS AFN3458
60V N-Channel
Technology Enhancement Mode MOSFET

Typical Characteristics

©Alfa-MOS Technology Corp. www.alfa-mos.com

Rev.A May 2012 Page 5
 Alfa-MOS AFN3458
60V N-Channel
Technology Enhancement Mode MOSFET

Package Information ( TSOP-6 )

©2010 Alfa-MOS Technology Corp.

2F, No.80, Sec.1, Cheng Kung Rd., Nan Kang Dist., Taipei City 115, Taiwan (R.O.C.)
Tel : 886 2) 2651 3928
Fax : 886 2) 2786 8483
©http://www.alfa-mos.com

©Alfa-MOS Technology Corp. www.alfa-mos.com

Rev.A May 2012 Page 6