Professional Documents
Culture Documents
Power MOSFET
30 V, 76 A, Single N-Channel, DPAK/IPAK
Features
•Low RDS(on) to Minimize Conduction Losses
•Low Capacitance to Minimize Driver Losses
•Optimized Gate Charge to Minimize Switching Losses http://onsemi.com
•These are Pb-Free Devices
V(BR)DSS RDS(on) MAX ID MAX
Applications
•CPU Power Delivery 30 V
6.0 mW @ 10 V
76 A
•DC-DC Converters 9.4 mW @ 4.5 V
•Low Side Switching
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
N-Channel
Drain-to-Source Voltage VDSS 30 V
G
Gate-to-Source Voltage VGS "20 V
Continuous Drain TA = 25°C ID 14 A S
Current (RqJA) (Note 1)
TA = 85°C 11
Power Dissipation TA = 25°C PD 2.14 W 4 4
(RqJA) (Note 1) 4
Continuous Drain TA = 25°C ID 11 A
Current (RqJA) (Note 2)
Steady TA = 85°C 8.8 1 2
3 1 1
State 2 3
Power Dissipation TA = 25°C PD 1.33 W 2
(RqJA) (Note 2) 3
CASE 369AA CASE 369AD CASE 369D
Continuous Drain TC = 25°C ID 76 A DPAK IPAK IPAK
Current (RqJC) (Bent Lead) (Straight Lead) (Straight Lead
(Note 1) TC = 85°C 59
STYLE 2 DPAK)
Power Dissipation TC = 25°C PD 60 W
(RqJC) (Note 1) MARKING DIAGRAMS
Pulsed Drain Current tp=10ms TA = 25°C IDM 150 A & PIN ASSIGNMENTS
4
Current Limited by Package TA = 25°C IDmaxPkg 45 A Drain
4 4
Operating Junction and Storage Temperature TJ, Tstg -55 to °C Drain Drain
06NG
YWW
175
48
06NG
06NG
YWW
YWW
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
http://onsemi.com
2
NTD4806N
http://onsemi.com
3
NTD4806N
100 160
10 V 150 VDS ≥ 10 V
90 6V 140
ID, DRAIN CURRENT (AMPS)
0.023
VGS = 11.5 V
0.018 0.005
0.013
0.008
0.003 0
3 4 5 6 7 8 9 10 50 55 60 65 70 75 80 85 90
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance vs. Gate-to-Source Figure 4. On-Resistance vs. Drain Current and
Voltage Gate Voltage
RDS(on), DRAIN-TO-SOURCE RESISTANCE
2.0 100,000
VGS = 0 V
ID = 30 A
VGS = 10 V TJ = 175°C
1.5 10,000
IDSS, LEAKAGE (nA)
(NORMALIZED)
1.0 1000
TJ = 125°C
0.5 100
0 10
-50 -25 0 25 50 75 100 125 150 175 5 10 15 20 25
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
http://onsemi.com
4
NTD4806N
4000 8
3000 Ciss 6
QT VGS
Ciss Q1 Q2
2000 4
Crss
1000 2
ID = 30 A
Coss
VGS = 4.5 V
Crss TJ = 25°C
0 0
10 5 0 5 10 15 20 25 0 5 10 15 20
VGS VDS QG, TOTAL GATE CHARGE (nC)
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 8. Gate-To-Source and Drain-To-Source
Figure 7. Capacitance Variation Voltage vs. Total Charge
1000 30
VDD = 15 V IS, SOURCE CURRENT (AMPS) VGS = 0 V
ID = 30 A TJ = 25°C
25
VGS = 11.5 V
100 tr 20
t, TIME (ns)
td(off) 15
10 td(on) 10
tf
5
1 0
1 10 100 0.5 0.6 0.7 0.8 0.9 1.0
RG, GATE RESISTANCE (OHMS) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Figure 10. Diode Forward Voltage vs. Current
Variation vs. Gate Resistance
1000 250
EAS, SINGLE PULSE DRAIN-TO-SOURCE
I D, DRAIN CURRENT (AMPS)
ID = 21 A
10 ms 200
AVALANCHE ENERGY (mJ)
100
100 ms
150
10 1 ms
VGS = 20 V
SINGLE PULSE 10 ms 100
TC = 25°C dc
1
RDS(on) LIMIT 50
THERMAL LIMIT
PACKAGE LIMIT
0.1 0
0.1 1 10 100 25 50 75 100 125 150 175
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy vs.
Safe Operating Area Starting Junction Temperature
http://onsemi.com
5
NTD4806N
100
10
1
1 10 100 1000
PULSE WIDTH (ms)
1.0
D = 0.5
0.2
(NORMALIZED)
0.1
ORDERING INFORMATION
Order Number Package Shipping†
NTD4806NT4G DPAK
2500 Tape & Reel
(Pb-Free)
NTD4806N-1G IPAK
75 Units/Rail
(Pb-Free)
http://onsemi.com
6
NTD4806N
PACKAGE DIMENSIONS
DPAK
CASE 369AA-01
ISSUE A
NOTES:
-T- SEATING 1. DIMENSIONING AND TOLERANCING
PLANE PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
B C
INCHES MILLIMETERS
V R E DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.22
B 0.250 0.265 6.35 6.73
4 C 0.086 0.094 2.19 2.38
Z D 0.025 0.035 0.63 0.89
A E 0.018 0.024 0.46 0.61
S H F 0.030 0.045 0.77 1.14
1 2 3 H 0.386 0.410 9.80 10.40
U J 0.018 0.023 0.46 0.58
L 0.090 BSC 2.29 BSC
R 0.180 0.215 4.57 5.45
S 0.024 0.040 0.60 1.01
F J U 0.020 --- 0.51 ---
L V 0.035 0.050 0.89 1.27
Z 0.155 --- 3.93 ---
D 2 PL
0.13 (0.005) M T
SOLDERING FOOTPRINT*
6.20 3.0
0.244 0.118
2.58
0.101
http://onsemi.com
7
NTD4806N
PACKAGE DIMENSIONS
OPTIONAL
CONSTRUCTION
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
http://onsemi.com NTD4806N/D
8