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December 2008
TM
SuperFET
FCP16N60 / FCPF16N60
600V N-Channel MOSFET
Features Description
• 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
• Typ. Rds(on) = 0.22Ω
balance mechanism for outstanding low on-resistance and
• Ultra low gate charge (typ. Qg=55nC) lower gate charge performance.
This advanced technology has been tailored to minimize
• Low effective output capacitance (typ. Coss.eff=110pF)
conduction loss, provide superior switching performance, and
• 100% avalanche tested withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
• RoHS Compliant
power conversion in switching mode operation for system
miniaturization and higher efficiency.
G
TO-220 GD S
TO-220F
G DS
FCP Series FCPF Series
S
Thermal Characteristics
Symbol Parameter FCP16N60 FCPF16N60 Unit
RθJC Thermal Resistance, Junction-to-Case 0.75 3.3 °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 16A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
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FCP16N60 / FCPF16N60 Rev. B1
2
10
2 10
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
1
1
6.0 V 10 o
10 Bottom : 5.5 V 150 C
o
25 C
o
0 -55 C
0
10
10
*Notes : *Note:
1. 250μs Pulse Test 1. VDS = 40V
ο
2. TC = 25 C 2. 250μs Pulse Test
10
-1
10
0
10
1 2 4 6 8 10
2
0.6 10
IDR , Reverse Drain Current [A]
Drain-Source On-Resistance
0.5
0.3
VGS = 20V
0.2 0 o o
10 150 C 25 C
*Notes :
0.1 1. VGS = 0V
*Note : TJ = 25 C
o 2. 250 μs Pulse Test
0.0
0 5 10 15 20 25 30 35 40 45 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID, Drain Current [A] VSD , Source-Drain Voltage [V]
7000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd VDS = 100V
6000 Crss = Cgd 10
VDS = 250V
VGS, Gate-Source Voltage [V]
Coss
4000
6
*Notes :
3000 1. VGS = 0 V
Ciss
2. f = 1 MHz
4
2000
Crss 2
1000
*Note : ID = 16A
0 0
-1 0 1
10 10 10 0 10 20 30 40 50 60
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FCP16N60 / FCPF16N60 Rev. B1
1.2 3.0
Drain-Source Breakdown Voltage
Drain-Source On-Resistance
2.5
RDS(ON), (Normalized)
BVDSS, (Normalized)
1.1
2.0
1.0 1.5
1.0
*Notes :
0.9 1. VGS = 0 V
*Notes :
2. ID = 250 μA 1. VGS = 10 V
0.5
2. ID = 8 A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]
Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for FCP16N60 for FCPF16N60
10
1
1 ms 1
100 us
10
1 ms
DC
10 ms
0
10 0 100 ms
10
DC
*Notes : *Notes :
o o
-1
10 1. TC = 25 C -1 1. TC = 25 C
o
10 o
2. TJ = 150 C 2. TJ = 150 C
3. Single Pulse 3. Single Pulse
-2 -2
10 10
0 1 2 3 0 1 2 3
10 10 10 10 10 10 10 10
20
15
ID, Drain Current [A]
10
0
25 50 75 100 125 150
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FCP16N60 / FCPF16N60 Rev. B1
0
10
* N o te s :
0 .2 o
1 . Z θ JC (t) = 0 .7 5 C /W M a x.
-1 2 . D u ty F a c to r, D = t 1 /t 2
10 0 .1
3 . T J M - T C = P D M * Z θ JC (t)
0 .0 5 PDM
0 .0 2 t1
t2
0 .0 1
-2
10 s in g le p u ls e
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
1
10
D = 0 .5
ZθJC(t), Thermal Response
0
10
0 .2
0 .1 *N o te s :
o
1 . Z θ J C (t) = 3 .3 C /W M a x .
0 .0 5
2 . D u ty F a c to r, D = t 1 /t 2
-1
10 3 . T J M - T C = P D M * Z θ J C (t)
0 .0 2
0 .0 1 PDM
t1
t2
s in g le p u ls e
-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
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FCP16N60 / FCPF16N60 Rev. B1
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FCP16N60 / FCPF16N60 Rev. B1
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FCP16N60 / FCPF16N60 Rev. B1
TO-220
9.90 ±0.20 4.50 ±0.20
(8.70)
1.30 ±0.10
2.80 ±0.10
(1.70)
+0.10
ø3.60 ±0.10 1.30 –0.05
18.95MAX.
(3.70)
15.90 ±0.20
9.20 ±0.20
(1.46)
(3.00)
(45°
)
(1.00)
13.08 ±0.20
10.08 ±0.30
10.00 ±0.20
Dimensions in Millimeters
8 www.fairchildsemi.com
FCP16N60 / FCPF16N60 Rev. B1
TO-220F
10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20
3.30 ±0.10
(7.00) (0.70)
6.68 ±0.20
15.87 ±0.20
15.80 ±0.20
(1.00x45°)
MAX1.47
9.75 ±0.30
0.80 ±0.10
(3
0°
)
#1
0.35 ±0.10 +0.10
0.50 –0.05 2.76 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]
4.70 ±0.20
9.40 ±0.20
Dimensions in Millimeters
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FCP16N60 / FCPF16N60 Rev. B1
PDP SPM™ ®
FlashWriter® *
FPS™ Power-SPM™
PowerTrench® The Power Franchise®
F-PFS™
PowerXS™
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FCP16N60 / FCPF16N60 Rev. B1