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FCP16N60 / FCPF16N60 600V N-Channel MOSFET

December 2008
TM
SuperFET
FCP16N60 / FCPF16N60
600V N-Channel MOSFET

Features Description
• 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
• Typ. Rds(on) = 0.22Ω
balance mechanism for outstanding low on-resistance and
• Ultra low gate charge (typ. Qg=55nC) lower gate charge performance.
This advanced technology has been tailored to minimize
• Low effective output capacitance (typ. Coss.eff=110pF)
conduction loss, provide superior switching performance, and
• 100% avalanche tested withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
• RoHS Compliant
power conversion in switching mode operation for system
miniaturization and higher efficiency.

G
TO-220 GD S
TO-220F
G DS
FCP Series FCPF Series
S

Absolute Maximum Ratings


Symbol Parameter FCP16N60 FCPF16N60 Unit
VDSS Drain-Source Voltage 600 V
ID Drain Current - Continuous (TC = 25°C) 16 16* A
- Continuous (TC = 100°C) 10.1 10.1* A
IDM Drain Current - Pulsed (Note 1)
48 48* A

VGSS Gate-Source voltage ± 30 V


EAS Single Pulsed Avalanche Energy (Note 2) 450 mJ
IAR Avalanche Current (Note 1) 16 A
EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 167 37.9 W
- Derate above 25°C 1.33 0.3 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL Maximum Lead Temperature for Soldering Purpose,
300 °C
1/8” from Case for 5 Seconds

*Drain current limited by maximum junction temperature

Thermal Characteristics
Symbol Parameter FCP16N60 FCPF16N60 Unit
RθJC Thermal Resistance, Junction-to-Case 0.75 3.3 °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com


FCP16N60 / FCPF16N60 Rev. B1

Free Datasheet http://www.Datasheet4U.com


FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FCP16N60 FCP16N60 TO-220 - - 50
FCPF16N60 FCPF16N60 TO-220F - - 50

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Conditions Min Typ Max Units


Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 600 -- -- V
VGS = 0V, ID = 250μA, TJ = 150°C -- 650 -- V
ΔBVDSS Breakdown Voltage Temperature
ID = 250μA, Referenced to 25°C -- 0.6 -- V/°C
/ ΔTJ Coefficient
BVDSS Drain-Source Avalanche Breakdown VGS = 0V, ID = 16A
-- 700 -- V
Voltage
IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V -- -- 1 μA
VDS = 480V, TC = 125°C -- -- 10 μA
IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V
RDS(on) Static Drain-Source
VGS = 10V, ID = 8A -- 0.22 0.26 Ω
On-Resistance
gFS Forward Transconductance VDS = 40V, ID = 8A (Note 4) -- 11.5 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V, -- 1730 2250 pF
f = 1.0MHz
Coss Output Capacitance -- 960 1150 pF
Crss Reverse Transfer Capacitance -- 85 -- pF
Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 45 60 pF
Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 110 -- pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 300V, ID = 16A -- 42 85 ns
RG = 25Ω
tr Turn-On Rise Time -- 130 270 ns
td(off) Turn-Off Delay Time -- 165 340 ns
(Note 4, 5)
tf Turn-Off Fall Time -- 90 190 ns
Qg Total Gate Charge VDS = 480V, ID = 16A -- 55 70 nC
VGS = 10V
Qgs Gate-Source Charge -- 10.5 13 nC
Qgd Gate-Drain Charge (Note 4, 5) -- 28 -- nC

Drain-Source Diode Characteristics and Maximum Ratings


IS Maximum Continuous Drain-Source Diode Forward Current -- -- 16 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 48 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS =16A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0V, IS = 16A -- 435 -- ns
dIF/dt =100A/μs (Note 4)
Qrr Reverse Recovery Charge -- 7.0 -- μC

NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 16A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics

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FCP16N60 / FCPF16N60 Rev. B1

Free Datasheet http://www.Datasheet4U.com


FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

2
10
2 10
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V

ID , Drain Current [A]


6.5 V
ID, Drain Current [A]

1
1
6.0 V 10 o
10 Bottom : 5.5 V 150 C

o
25 C
o
0 -55 C
0
10
10
*Notes : *Note:
1. 250μs Pulse Test 1. VDS = 40V
ο
2. TC = 25 C 2. 250μs Pulse Test

10
-1
10
0
10
1 2 4 6 8 10

VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage


Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue

2
0.6 10
IDR , Reverse Drain Current [A]
Drain-Source On-Resistance

0.5

0.4 VGS = 10V 1


10
RDS(ON) [Ω],

0.3

VGS = 20V
0.2 0 o o
10 150 C 25 C

*Notes :
0.1 1. VGS = 0V
*Note : TJ = 25 C
o 2. 250 μs Pulse Test

0.0
0 5 10 15 20 25 30 35 40 45 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID, Drain Current [A] VSD , Source-Drain Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

7000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd VDS = 100V
6000 Crss = Cgd 10
VDS = 250V
VGS, Gate-Source Voltage [V]

5000 VDS = 480V


8
Capacitance [pF]

Coss
4000
6
*Notes :
3000 1. VGS = 0 V
Ciss
2. f = 1 MHz
4
2000

Crss 2
1000
*Note : ID = 16A

0 0
-1 0 1
10 10 10 0 10 20 30 40 50 60

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

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FCP16N60 / FCPF16N60 Rev. B1

Free Datasheet http://www.Datasheet4U.com


FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation


vs. Temperature vs. Temperature

1.2 3.0
Drain-Source Breakdown Voltage

Drain-Source On-Resistance
2.5

RDS(ON), (Normalized)
BVDSS, (Normalized)

1.1
2.0

1.0 1.5

1.0
*Notes :
0.9 1. VGS = 0 V
*Notes :
2. ID = 250 μA 1. VGS = 10 V
0.5
2. ID = 8 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for FCP16N60 for FCPF16N60

Operation in This Area Operation in This Area


10
2 is Limited by R DS(on) is Limited by R DS(on)
2
10
10 us
100 us 10 us
ID, Drain Current [A]
ID, Drain Current [A]

10
1
1 ms 1
100 us
10
1 ms
DC
10 ms
0
10 0 100 ms
10
DC

*Notes : *Notes :
o o
-1
10 1. TC = 25 C -1 1. TC = 25 C
o
10 o
2. TJ = 150 C 2. TJ = 150 C
3. Single Pulse 3. Single Pulse

-2 -2
10 10
0 1 2 3 0 1 2 3
10 10 10 10 10 10 10 10

VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V]

Figure 10. Maximum Drain Current vs. Case Temperature

20

15
ID, Drain Current [A]

10

0
25 50 75 100 125 150

TC, Case Temperature [°C]

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FCP16N60 / FCPF16N60 Rev. B1

Free Datasheet http://www.Datasheet4U.com


FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Figure 11-1. Transient Thermal Response Curve (FCP16N60)

0
10

ZθJC(t), Thermal Response


D = 0 .5

* N o te s :
0 .2 o
1 . Z θ JC (t) = 0 .7 5 C /W M a x.
-1 2 . D u ty F a c to r, D = t 1 /t 2
10 0 .1
3 . T J M - T C = P D M * Z θ JC (t)

0 .0 5 PDM

0 .0 2 t1
t2
0 .0 1
-2
10 s in g le p u ls e

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11-2. Transient Thermal Response Curve (FCPF16N60)

1
10

D = 0 .5
ZθJC(t), Thermal Response

0
10
0 .2
0 .1 *N o te s :
o
1 . Z θ J C (t) = 3 .3 C /W M a x .
0 .0 5
2 . D u ty F a c to r, D = t 1 /t 2
-1
10 3 . T J M - T C = P D M * Z θ J C (t)
0 .0 2
0 .0 1 PDM
t1
t2
s in g le p u ls e
-2
10

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

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FCP16N60 / FCPF16N60 Rev. B1

Free Datasheet http://www.Datasheet4U.com


FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

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FCP16N60 / FCPF16N60 Rev. B1

Free Datasheet http://www.Datasheet4U.com


FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

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FCP16N60 / FCPF16N60 Rev. B1

Free Datasheet http://www.Datasheet4U.com


FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Mechanical Dimensions

TO-220
9.90 ±0.20 4.50 ±0.20

(8.70)
1.30 ±0.10

2.80 ±0.10
(1.70)

+0.10
ø3.60 ±0.10 1.30 –0.05

18.95MAX.
(3.70)

15.90 ±0.20
9.20 ±0.20

(1.46)

(3.00)
(45°
)
(1.00)
13.08 ±0.20

10.08 ±0.30

1.27 ±0.10 1.52 ±0.10

0.80 ±0.10 +0.10


0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

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FCP16N60 / FCPF16N60 Rev. B1

Free Datasheet http://www.Datasheet4U.com


FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Mechanical Dimensions (Continued)

TO-220F
10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20
3.30 ±0.10

(7.00) (0.70)

6.68 ±0.20

15.87 ±0.20
15.80 ±0.20

(1.00x45°)

MAX1.47
9.75 ±0.30

0.80 ±0.10
(3

)

#1
0.35 ±0.10 +0.10
0.50 –0.05 2.76 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]
4.70 ±0.20

9.40 ±0.20

Dimensions in Millimeters

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FCP16N60 / FCPF16N60 Rev. B1

Free Datasheet http://www.Datasheet4U.com


FCP16N60 / FCPF16N60 600V N-Channel MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Build it Now™ FRFET® Programmable Active Droop™
CorePLUS™ Global Power ResourceSM QFET® tm

CorePOWER™ Green FPS™ QS™


TinyBoost™
CROSSVOLT™ Green FPS™ e-Series™ Quiet Series™
TinyBuck™
CTL™ GTO™ RapidConfigure™
TinyLogic®
Current Transfer Logic™ IntelliMAX™
TINYOPTO™
EcoSPARK® ISOPLANAR™ ™ TinyPower™
EfficentMax™ MegaBuck™ Saving our world, 1mW /W /kW at a time™
TinyPWM™
EZSWITCH™ * MICROCOUPLER™ SmartMax™
™ TinyWire™
MicroFET™ SMART START™
μSerDes™
MicroPak™ SPM®
® MillerDrive™ STEALTH™
tm MotionMax™ SuperFET™
Fairchild® Motion-SPM™ SuperSOT™-3 UHC®
Fairchild Semiconductor® OPTOLOGIC® SuperSOT™-6 Ultra FRFET™
FACT Quiet Series™ OPTOPLANAR® SuperSOT™-8 UniFET™
FACT® ® SupreMOS™ VCX™
FAST® SyncFET™ VisualMax™
FastvCore™ XS™
tm

PDP SPM™ ®
FlashWriter® *
FPS™ Power-SPM™
PowerTrench® The Power Franchise®
F-PFS™
PowerXS™
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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PRODUCT STATUS DEFINITIONS


Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later


Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to


No Identification Needed Full Production
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild


Obsolete Not In Production
Semiconductor. The datasheet is for reference information only.
Rev. I37

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FCP16N60 / FCPF16N60 Rev. B1

Free Datasheet http://www.Datasheet4U.com

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