FMH23N50E FUJI POWER MOSFET

Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET

Features Outline Drawings [mm] Equivalent circuit schematic

Maintains both low power loss and low noise TO-3P(Q)
Lower RDS (on) characteristic
More controllable switching dv/dt by gate resistance
Drain(D)
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (3.0±0.5V)
High avalanche durability
Applications Gate(G)
Switching regulators Source(S)
UPS (Uninterruptible Power Supply)
DC-DC converters

Maximum Ratings and Characteristics

Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description Symbol Characteristics Unit Remarks
VDS 500 V
Drain-Source Voltage
VDSX 500 V VGS = -30V
Continuous Drain Current ID ±23 A
Pulsed Drain Current I DP ±92 A
Gate-Source Voltage VGS ±30 V
Repetitive and Non-Repetitive Maximum Avalanche Current I AR 23 A Note*1
Non-Repetitive Maximum Avalanche Energy E AS 767.3 mJ Note*2
Repetitive Maximum Avalanche Energy E AR 31.5 mJ Note*3
Peak Diode Recovery dV/dt dV/dt 9.3 kV/µs Note*4
Peak Diode Recovery -di/dt -di/dt 100 A/µs Note*5
2.50 Ta=25°C
Maximum Power Dissipation PD W
315 Tc=25°C
Operating and Storage Tch 150 °C
Temperature range Tstg -55 to + 150 °C

Electrical Characteristics at Tc=25°C (unless otherwise specified)

Description Symbol Conditions min. typ. max. Unit
Drain-Source Breakdown Voltage BVDSS I D =250µA, VGS =0V 500 - - V
Gate Threshold Voltage VGS (th) I D =250µA, VDS =VGS 2.5 3.0 3.5 V
VDS =500V, VGS =0V Tch =25°C - - 25
Zero Gate Voltage Drain Current I DSS µA
VDS =400V, VGS =0V Tch =125°C - - 250
Gate-Source Leakage Current I GSS VGS =±30V, VDS =0V - 10 100 nA
Drain-Source On-State Resistance R DS (on) I D =11.5A, VGS =10V - 0.21 0.245 Ω
Forward Transconductance gfs I D =11.5A, VDS =25V 14 28 - S
Input Capacitance Ciss VDS =25V - 3500 5250
Output Capacitance Coss VGS =0V - 330 495 pF
Reverse Transfer Capacitance Crss f=1MHz - 24 36
td(on) Vcc =300V - 24 36
Turn-On Time
tr VGS =10V - 13 19.5
ns
td(off) I D =11.5A - 150 225
Turn-Off Time
tf RGS =5.6Ω - 20 30
Q th - 11 16.5
Vcc =250V
Total Gate Charge QG - 93 139.5
I D =23A nC
Gate-Source Charge Q GS - 24 36
VGS =10V
Gate-Drain Charge Q GD - 30 45
Avalanche Capability I AV L=1.16mH, Tch =25°C 23 - - A
Diode Forward On-Voltage VSD I F =23A, VGS =0V, Tch =25°C - 0.90 1.35 V
Reverse Recovery Time trr I F =23A, VGS =0V - 0.5 - µs
Reverse Recovery Charge Qrr -di/dt=100A/µs, Tch=25°C - 8 - µC

Thermal Characteristics
Description Symbol Test Conditions min. typ. max. Unit
Rth (ch-c) Channel to case 0.40 °C/W
Thermal resistance
Rth (ch-a) Channel to ambient 50.0 °C/W
Note *1 : Tch≤150°C Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
Note *2 : Stating Tch=25°C, IAS =10A, L=14.1mH, Vcc=50V, RG =50Ω See to the 'Transient Themal impeadance' graph.
E AS limited by maximum channel temperature and avalanche current. Note *4 : I F ≤-I D, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.
See to 'Avalanche Energy' graph. Note *5 : I F ≤-I D, dv/dt=5.0kV/µs, Vcc≤BVDSS, Tch≤150°C.

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FMH23N50E FUJI POWER MOSFET

Allowable Power Dissipation Safe Operating Area

ID=f(VDS):Duty=0(Single pulse),Tc=25°C
PD=f(Tc)
350

10
2 t=
300 1µs

10µs
250 10
1
100µs

200
0 1ms
10
PD [W]

ID [A]
150
-1
10
100 Power loss waveform : D.C.
Square waveform

-2
10 PD
50
t

-3
0 10
0 25 50 75 100 125 150 10
0
10
1 2
10 10
3

VDS [V]
Tc [° C]

Typical Output Characteristics Typical Transfer Characteristic

ID=f(VDS):80 µs pulse test,Tch=25 °C ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
70 100

60
10V

50 6.0V 10
5.5V

40
ID[A]
ID [A]

30 5.0V
1

20

VGS=4.5V
10
0.1

0
0 4 8 12 16 20 24 0 1 2 3 4 5 6 7 8 9 10
VDS [V] VGS[V]

Typical Transconductance Typical Drain-Source on-state Resistance

gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
100 0.9

0.8 VGS=4.5V
5.0V
0.7

0.6
10
RDS(on) [ Ω ]

0.5
5.5V 6.0V
gfs [S]

0.4 10V

0.3
1
0.2

0.1

0.0

0.1
0.1 1 10 100 0 10 20 30 40 50 60
ID [A] ID [A]

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FMH23N50E FUJI POWER MOSFET

Drain-Source On-state Resistance Gate Threshold Voltage vs. Tch

RDS(on)=f(Tch):ID=11.5A,VGS=10V VGS(th)=f(Tch):VDS=VGS,ID=250µA
1.0 6.0

5.5

5.0
0.8
4.5

4.0

VGS(th) [V]
0.6
3.5
RDS(on) [ Ω ]

max.
3.0
typ.

0.4 2.5
max.
2.0 min.
typ. 1.5
0.2
1.0

0.5

0.0 0.0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Tch [°C] Tch [°C]

Typical Gate Charge Characteristics Typical Capacitance

VGS=f(Qg):ID=23A,Tch=25°C C=f(VDS):VGS=0V,f=1MHz
14 10
4

Ciss
12 Vcc= 100V
250V
400V 3
10
10

8
C [pF]
VGS [V]

2 Coss
10
6

4
1
10 Crss

0 10
0

0 20 40 60 80 100 120 140 -1

10 10
0
10
1
10
2
10
3

Qg [nC] VDS [V]

Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID

IF=f(VSD):80 µs pulse test,Tch=25 °C t=f(ID):Vcc=300V,VGS=10V,RG=5.6 Ω
3
100 10

td(off)

2 tf
10 10
IF [A]

t [ns]

td(on)

1
1 10 tr

0
0.1 10
-1 0 1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 10 10 10
VSD [V] ID [A]

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FMH23N50E FUJI POWER MOSFET

Maximum Avalanche Energy vs. starting Tch Maximum Transient Thermal Impedance
E(AV)=f(starting Tch):Vcc=50V,I(AV)<=23A Zth(ch-c)=f(t):D=0
1
10
800 IAS=23A

700 0
10

Zth(ch-c) [°C/W]
600
IAS=14A
-1
10
500
EAV [mJ]

400
IAS=10A 10
-2

300

200 10-3
-6 -5 -4 -3 -2 -1 0
10 10 10 10 10 10 10
100 t [sec]

0
0 25 50 75 100 125 150
starting Tch [°C]

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FMH23N50E FUJI POWER MOSFET

WARNING

1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.

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