Questions On Conduction in Semiconductors

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Electrons & Holes in

Semiconductor Questions and
Answers
by Manish
4 minutes
This set of Electronic Devices and Circuits Multiple Choice

Questions & Answers (MCQs) focuses on “Electrons and
Holes in Semiconductor”.
1. Which of the following expressions represents the correct

distribution of the electrons in the conduction band?
(gc(E)=density of quantum states, fF(E)=Fermi dirac
probability
a) n(E)=gc(E)*fF(E)
b) n(E)=gc(-E)*fF(E)
c) n(E)=gc(E)*fF(-E)
d) n(E)= gc(-E)*fF(-E)
View Answer
Answer: a
Explanation: The distribution of the electrons in the
conduction band is given by the product of the density into
Fermi-dirac distribution.
2. What is the value of the effective density of states
1 of 5 3/16/18, 9:03 AM
function in the conduction band at 300k?

a) 3*1019 cm-3
b) 0.4*10-19 cm-3
c) 2.5*1019 cm-3
d) 2.5*10-19 cm-3
View Answer
Answer : c Explanation : Substituting the

values of mn=m0 ,h=6.626*10-34J/s ,k=1.38*10-23 and
T=300K, we get Nc=2.5*1019 cm-3.
3. In a semiconductor which of the following carries can
contribute to the current?
a) Electrons
b) Holes
c) Both
d) None
View Answer
Answer : c
Explanation : In a semiconductor, two types of charges are
there by which the flow of the current takes place. So, both
the holes and electrons take part in the flow of the current.
4. Which of the following expressions represent the Fermi

probability function?
a) fF(E)=exp(-[E-EF]/KT)
b) fF(E)=exp(-[EF-E]/KT)
c) fF(E)=exp([E-EF]/KT)
d) fF(E)=exp(-[EF-E]/KT)
View Answer
2 of 5 3/16/18, 9:03 AM
Answer : b
Explanation : It is the correct formula for the Fermi
probability function.
5. Electrons from valence band rises to conduction band

when the temperature is greater than 0 k. Is it True or
False?
a) True
b) False
View Answer
Answer : a
Explanation : As the temperature rises above 0 k, the
electrons gain energy and rises to the conduction band
from the valence band.
6. What is the intrinsic electrons concentration at T=300K in

Silicon?
a) 1.5*1010cm-3
b) 1.5*10-10cm-3
c) 2.5*1019cm-3
d) 2.5*10-19cm-3
View Answer
Answer : a Explanation : Using the formula,
We get, ni=1.5*1010cm-3.
7. The intrinsic Fermi level of a semiconductor depends on
which of the following things?
a) Emidgap
b) mp*
c) mn*
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d) All of the mentioned

View Answer
Answer : d Explanation : From the

above formula, Efidepends on all of the options given.
8. What is the difference between the practical value and
theoretical value of ni?
a) Factor of 1
b) Factor of 2
c) Factor of 3
d) Factor of 4
View Answer
Answer : b
Explanation : This is practically proved.
9. The thermal equilibrium concentration of the electrons in

the conduction band and the holes in the valence band
depends upon?
a) Effective density of states
b) Fermi energy level
c) Both A and B
d) Neither A nor B
View Answer
Answer : c Explanation : The electrons and holes depends

upon the effective density of the states and the Fermi
energy level given by the formula,
.
10. In which of the following semiconductor, the
concentration of the holes and electrons is equal?
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a) Intrinsic
b) Extrinsic
c) Compound
d) Elemental
View Answer
Answer : a
Explanation : In the intrinsic semiconductor, ni=pi that is the
number of the electrons is equal to the number of the holes.
Whereas in the extrinsic conductor ni is not equal to pi.
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Electronic Devices and Circuits.
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here is complete set of 1000+ Multiple Choice Questions
and Answers.
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Semiconductor Conductivity -
Electronic Devices and Circuits
Questions and Answers
by Manish
3-4 minutes

Questions & Answers (MCQs) focuses on “Conductivity of a
Semiconductor”.
1. What is the SI unit of conductivity?

a) Ωm
b) (Ωm)-1
c) Ω
d) m
View Answer
Answer : b
Explanation: The formula of the conductivity is the σ=1/ρ.
So, the unit of resistivity is Ωm.
Now, the unit of conductivity becomes the inverse of
resistivity.
2. Which of the following expressions doesn’t represent the

correct formula for Drift current density?
a) J=σE
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b) J=qnµE
c) J=µE
d) None
View Answer
Answer : c
Explanation : The following formulae represent the correct
expression for drift current density,
J=σE
And J=qnµE.
3. Does a semiconductor satisfy the ohm’s law?

a) True
b) False
View Answer
Answer : a
Explanation : V=IR
J=σE
I/A=σ(V/L)
V=(L/ σA)*I=(ρL)*I/A=IR
Thus, above equation satisfies Ohm’s law.
4. In which range of temperature, freeze out point begins to

occur?
a) Higher range
b) Lower range
c) Middle range
d) None
View Answer
Answer : b
Explanation : At lower range of temperature, the
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concentration and conductivity decreases with lowering of

the temperature.
5. Which of the following expression represents the correct

formula for the conductivity in an intrinsic material?
a) ρ=e(µn+µp )ni
b) σ=e(µn+µp )ni
c) σ=1/(e(µn+µp )ni)
d) ρ=1/(e(µn+µp )ni)
View Answer
Answer : b
Explanation: Option b is the correct formula.
6. What is the voltage difference if the current is 1mA and

length and area is 2cm and 4cm2 respectively?(ρ=2Ωm)
a) 0.025V
b) 25V
c) 0.25V
d) None
View Answer
Answer : d
Explanation : V=IR
R=ρl/(A)=2*2/4=100Ω
V=1mA*100
=0.1V.
7. Is resistivity is a function of temperature?

a)True
b)False
View Answer
3 of 5 3/16/18, 9:03 AM
Answer : a
Explanation : Resistance depends on the temperature and
the resistivity depends on the resistance, so now the
resistivity depends on the temperature.
8. What is the electric field when the voltage applied is 5V

and the length is 100cm?
a) 0.5V/m
b) 5V/m
c) 50V/m
d) None
View Answer
Answer : c
Explanation : E=V/L=5/100cm=5V/m.
9. Calculate the average random thermal energy at

T=300K?
a) 0.038eV
b) 3.8eV
c) 38eV
d) 0.38eV
View Answer
Answer : a
Explanation : Average random thermal
energy=3/2*k*T=0.038eV.
10.
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In the above figure, a semiconductor having an area ‘A’ and

length ‘L’ and carrying current ‘I’ applied a voltage of ‘V’
volts across it. Calculate the relation between V and A?
a) V= ((ρ*L)/A)*I
b) V= ((ρ*A)/L)*I
c) V= ((ρ*I)/(A*L))
d) V=((ρ*I*A*L)
View Answer
Answer : a
Explanation: Option A, satisfies the Ohm’s law which is
V=IR where R=(ρl)/A.


and Answers.
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Donor & Acceptor impurities -

Questions and Answers
by Manish
4-5 minutes

Questions & Answers (MCQs) focuses on “Donor and
Acceptor impurities”.
1. At what temperature the donor states are completely

ionized?
a) 0 K
b) ROOM
c) 300K
d) 900K
View Answer
Answer: b
Explanation: At room temperature, the donors have
donated their electrons to the conduction band.
2. The opposite of ionization takes place at which

temperature?
a) 0 K
b) ROOM
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c) 300 K
d) 900K
View Answer
Answer: a
Explanation: AT 0 K, all the donors and acceptors are in
their lowest energy levels.
3. What do you mean by the tem ‘FREEZE-OUT’?

a) All the electrons are frozen at room temperature
b) None of the electrons are thermally elevated to the
conduction band
c) All the electrons are in the conduction band
d) All the holes are in the valence band
View Answer
Answer: b
Explanation: Freeze out means none of the electrons are
transmitted to the conduction band.
4. Which of the following expressions represent the correct

formula for the density of electrons occupying the donor
level?
a) nd=Nd-Nd+
b) nd=Nd-Nd–
c) nd=Nd+Nd+
d) nd=Nd+Nd–
View Answer
Answer: a
Explanation: The density of the electrons is equal to the
electrons present in the substrate minus the number of
donors present.
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5. Which of the following band is just above the intrinsic

Fermi level for n-type semiconductor?
a) Donor band
b) Valence band
c) Acceptor band
d) Conduction band
View Answer
Answer: a
Explanation: For n-type semiconductors, the donor band is
just above the intrinsic Fermi level.
6. At absolute zero temperature, which level is above the

Fermi energy level in the case of donors?
a) Donor energy level
b) Acceptor energy level
c) Conduction Band
d) Valence Band
View Answer
Answer: c Explanation: At T=0 K, the tem exp(-∞)=0 in the

expression of
Thus, EF>ED So, only conduction

band lies above the Fermi energy level.
7. At T=0 K, the location of Fermi level with respect to the
Ec and Ed for the n type material is?
a) Above than conduction band
b) Midway
c) Lower than Ed
d) Greater than Ed
View Answer
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Answer: b
Explanation: At T=0 K, the Fermi level of n band lies
between the midway of Ec and Ed as intrinsic Fermi level
always lies between the Ec and Ev.
8. At absolute zero temperature, which level is below the

Fermi energy level in the case of acceptors?
a) Donor energy level
b) Valence Band
c) Conduction band
d) Acceptor energy level
View Answer
Answer: b Explanation: At T=0 K, the tem exp(-∞)=0 in the

expression of
So, only valence band lies below the

Fermi energy level of the acceptors.
9.
For the above n-type semiconductor, what is B knows as?

a) Valence Band
b) Conduction Band
c) Donor Energy level
d) Acceptor energy level
View Answer
4 of 6 3/16/18, 9:04 AM
Answer: c
Explanation: For n-type semiconductors, the donor energy
level is always greater than the Fermi level energy.
10.
For the above given figure, identify the correct option for
satisfying the above semiconductor figure?
a) P type, A-Conduction band, B-donor energy band, C-
Valence band
b) P type, A-Conduction band, B-acceptor energy band, C-
Valence band
c) n type, A-Conduction band, B-donor energy band, C-
Valence band
d) n type, A-Conduction band, B-acceptor energy band, C-
Valence band
View Answer
Answer: c
Explanation: The given figure has B band below the intrinsic
Fermi level, so that would be acceptor energy band and will
be a p-type semiconductor.


5 of 6 3/16/18, 9:04 AM
and Answers.
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Interview Questions and Answers
by Manish
4 minutes
This set of Electronic Devices and Circuits Interview

Questions and Answers focuses on “Charge Densities in a
Semiconductor impurities”.
1. Is n/p=ni2 is a correct formula?

a) True
b) False
View Answer
Answer: b
Explanation: The correct formula is n*p=ni2.
2. Calculate the number of electrons is the number of holes

are 15*1010?
a) 15*1010
b) 1.5*108
c) 1.5*109
d) 1.5*1010
View Answer
Answer: c
Explanation: n*p=(1.5*1010)2
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n*15*1010=1.5*1.5*1010*1010
n=1.5*109 electrons.
3. For which type of material, the number of free electron

concentration is equal to the number of donor atoms?
a) P type semiconductor
b) Metal
c) N-type semiconductor
d) Insulator
View Answer
Answer: c
Explanation: The n-type semiconductor has equal
concentration of free electron and donor atoms.
4. Identify the correct condition for a semiconductor to be

electrically neutral.
a) Nd+p=Na+n
b) Nd-p=Na+n
c) Nd+p=Na-n
d) Nd-p=Na-n
View Answer
Answer: a
Explanation: The sum of the number of donors and the
holes is equal to the sum of the number of the acceptors
and the electrons.
5. Do the Fermi energy level changes in a semiconductor?

a) True
b) False
View Answer
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Answer: a
Explanation: The Fermi energy level changes as the
electron and hole concentrations change because of the
formula which defines the position of the Fermi level
depending on the concentration of holes and electrons.
6. Consider a silicon wafer having Nc=2.8*1019cm-3 and the

Fermi energy is .25eV below the conduction band.
Calculate the equilibrium concentrations of electrons at
T=300K?
a) 18*1016cm-3
b) 1.8*1016cm-3
c) 1.8*1014cm-3
d) 180*1016cm-3
View Answer
Answer: a
Explanation: n0=Nc*exp(-Eg/KT)=2.8*1019*exp(-0.25
/0.0259)
=18*1016cm-3.
7. If Ef>Efi, then what is the type of the semiconductor?

a) n-type
b) P-type
c) Elemental
d) Compound
View Answer
Answer: a
Explanation: For n-type, the Fermi energy level is greater
than the intrinsic Fermi energy level because in an energy
band, Fermi level of donors is always greater than that of
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the acceptors.
8. The 1-fF (E) increases in which of the following band for

n type semiconductor?
a) Conduction band
b) Donor band
c) Acceptor band
d) Valence band
View Answer
Answer: d
Explanation: For an n-type semiconductor, the probability of
fF (E) decreases in the valence band. The probability of
finding the electron in the conduction band is more.
9. The fF (E) decreases in which of the following band for

p-type semiconductor?
a) Conduction band
b) Donor band
c) Acceptor band
d) Valence band
View Answer
Answer: a
Explanation: The probability of finding the electron in the
conduction band decreases for a p-type semiconductor
because in a p-type semiconductor, the holes will be in
conduction band rather than the electrons.
10. Do the intrinsic Fermi energy level changes with the

addition of dopants and acceptors?
a) True
b) False
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View Answer
Answer: b
Explanation: The intrinsic Fermi energy level always
remains constant because it is an imaginary level taken to
distinguish between the Fermi level of the types of
semiconductor.

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Fermi Level in a Semiconductor

having Impurities Questions and
Answers
by Manish
4 minutes

Questions & Answers (MCQs) focuses on “Fermi Level in a
Semiconductor having Impurities”.
1. Which states get filled in the conduction band when the

donor-type impurity is added to a crystal?
a) Na
b) Nd
c) N
d) P
View Answer
Answer: b
Explanation: When the donor-type impurity is added to a
crystal, first Nd states get filled because it is of the highest
energy.
2. Which of the following expression represent the correct

formulae for calculating the exact position of the Fermi level
for p-type material?
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a) EF = EV + kTln(ND / NA )
b) EF = -EV + kTln(ND / NA )
c) EF = EV – kTln(ND / NA )
d) EF = -EV – kTln(ND / NA )
View Answer
Answer: a
Explanation: The correct position of the Fermi level is found
with the formula in the ‘a’ option.
3. Where will be the position of the Fermi level of the n-type

material when ND=NA?
a) Ec
b) Ev
c) Ef
d) Efi
View Answer
Answer: a
Explanation: When ND=NA, kTln(ND/NA )=0
So,
Ef=Ec.
4. When the temperature of either n-type or p-type

increases, determine the movement of the position of the
Fermi energy level?
a) Towards up of energy gap
b) Towards down of energy gap
c) Towards centre of energy gap
d) Towards out of page
View Answer
Answer: c
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Explanation: whenever the temperature increases, the

Fermi energy level tends to move at the centre of the
energy gap.
5. Is it true, when the temperature rises, the electrons in the

conduction band becomes greater than the donor atoms?
a) True
b) False
View Answer
Answer: a
Explanation: When the temperature increases, there is an
increase in the electron-hole pairs and all the donor atoms
get ionized, so now the thermally generated electrons will
be greater than the donor atoms.
6. If the excess carriers are created in the semiconductor,

then identify the correct energy level diagram.
a)
b)
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c)
d)
View Answer
Answer: a
Explanation: The diagram A refers the most suitable energy
level diagrams because Efp>Ef>Efi>Efp>Ev.
7. If excess charge carriers are created in the

semiconductor then the new Fermi level is known as Quasi-
Fermi level. Is it true?
a) True
b) False
View Answer
Answer: a
Explanation: Quasi-fermi level is defined as the change in
the level of the Fermi level when the excess chare carriers
are added to the semiconductor.
8. Ef lies in the middle of the energy level indicates the

unequal concentration of the holes and the electrons?
a) True
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b) False
View Answer
Answer: b
Explanation: When the Ef is in the middle of the energy
level, it indicates the equal concentration of the holes and
electrons.
9. Consider a bar of silicon having carrier concentration

n0=1015 cm-3 and ni=1010cm-3. Assume the excess carrier
concentrations to be n=1013cm-3, calculate the quasi-fermi
energy level at T=300K?
a) 0.2982 eV
b) 0.2984 eV
c) 0.5971 eV
d) 1Ev
View Answer
Answer: b Explanation:
=1.38*10-23*300*ln(1013+1015/1013) =0.2984 eV.
10. From the above equation, assuming the same values
for the for ni, n= p and T. Given that p0=105cm-3. Calculate
the quasi-fermi energy level in eV?
a) 0.1985
b) 0.15
c) 0.1792
d) 0.1
View Answer
Answer: c Explanation: Using the same equation,
5 of 6 3/16/18, 9:04 AM
Substituting the respective values,

EFi – EFp=0.1792 eV.


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Diffusion - Electronic Devices and

Circuits Questions and Answers
by Manish
3-4 minutes

Questions & Answers (MCQs) focuses on “Diffusion”.
1. What is the SI unit of electron diffusion constant?

a) cm2/s
b) m2/s
c) m/s
d) none
View Answer
Answer: b
Explanation: J=eDdn/dx
So D=q*m/ (q*s*(1/m))
=m2/s.
2. Calculate the diffusion current density when the

concentration of electron varies from the 1*1018 to 7*1017
cm-3 over a distance of 0.10 cm.D=225cm2/s
a) 100 A/cm2
b) 108 A/cm2
c) 0.01A/cm2
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d) None
View Answer
Answer: b
Explanation: J=eDdn/dx
J=1.6*10-19*225*(1018-(7*1017))/0.1
=108A/cm2.
3. Which is the correct formula for the Jp?

a) Jp=qDdp/dx
b) Jp=pDdn/dx
c) Jp=-qDdp/dx
d) None
View Answer
Answer: c
Explanation: Jp is negative for the p type of
semiconductors.
4. What is the direction of the electron diffusion current

density relative to the electron flux?
a) Same direction
b) Opposite to each other
c) Perpendicular to each other
d) At 270 degrees to each other
View Answer
Answer: b
Explanation: From the graph between electron
concentration and the distance, we can see that the
direction of the electron diffusion current density is opposite
to the electron flux.
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5. In diffusion, the particles flow from a region of _______ to

region of ___________
a) High, low
b) Low , high
c) High , medium
d) Low, medium
View Answer
Answer: a
Explanation: Diffusion is the process of flow of particles
form the region of the high concentration to a region of low
concentration.
6. Which of the following parameter describes the best

movement of the electrons inside a semiconductor?
a) Velocity gradient
b) Diffusion
c) Mobility
d) Density gradient
View Answer
Answer: c
Explanation: Mobility is defined as the movement of the
electrons inside a semiconductor. On the other hand,
velocity gradient is the ratio of velocity to distance.
7. Which of the following term isn’t a part of the total current

density in a semiconductor?
a) Temperature
b) µ
c) e
d) E
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View Answer
Answer: a
Explanation: J=enµE+epµE+eDdn/dx-eDdp/dx
So, temperature isn’t a part of the equation.
8. What does dn/dx represent?

a) Velocity gradient
b) Volume gradient
c) Density gradient
d) None
View Answer
Answer: c
Explanation: dn/dx represent velocity gradient.
9. Calculate the diffusion constant for the holes when the

mobility of the holes is 400cm2/V-s and temperature is
300K?
a) 1.035m m2/s
b) 0.035m m2/s
c) 1.5m m2/s
d) 1.9m m2/s
View Answer
Answer: a
Explanation: Dp=VT*µn
= (1.38*10-23*300*400*10-2)/ (1.6*10-19)
= 1.035m m2/s.
10. Calculate the diffusion constant for the electrons when

the mobility of the electrons is 325cm2/V-s and temperature
is 300K?
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a) 0.85 m2/s
b) 0.084 m2/s
c) 0.58 m2/s
d) 0.95 m2/s
View Answer
Answer: c
Explanation: Dn=VT*µn
= (1.38*10-23*300*325*10-2)/ (1.6*10-19)
= 0.084 m2/s.


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Questions and Answers for
Freshers
by Manish
4 minutes
This set of Electronic Devices and Circuits Questions and

Answers for Freshers focuses on “Carrier Life Time”.
1. What is the range of the carrier lifetime?

a) Nanoseconds to microseconds
b) Nanoseconds to hundreds of microseconds
c) Nanoseconds to tens of microseconds
d) Nanoseconds to milliseconds
View Answer
Answer: b
Explanation: Carrier lifetime is defined as the existence of
any carrier for τ seconds. Carrier lifetime ranges from
nanoseconds to hundreds of microseconds.
2. What is the process number of Schokley-Read-Hall

Theory processes?
Process-‘ The capture of an electron from the conduction
band by an initially neutral empty trap’
a) Process1
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b) Process2
c) Process3
d) Process4
View Answer
Answer: a
Explanation: This is the first process of Schokley-Read-Hall
theory of Recombination.
3. Calculate the recombination rate if the excess carrier

concentration is 1014cm-3 and the carrier lifetime is
1µseconds.
a) 108
b) 1010
c) 1020
d) 1014
View Answer
Answer: c
Explanation: The recombination rate, R=δn/τ.
So, R=1014 / 10-6
R=1020.
4. Calculate the capture rate where Cn=10, Nt=1010cm-3,

n=1020 and fF (Et)=0.4.
a) 6*1030
b) 5*1030
c) 36*1030
d) 1.66*1029
View Answer
Answer: a
2 of 5 3/16/18, 9:04 AM
Explanation: Rcn=Cn*N_t*(1-fF (Et))*n

Substituting the values,
Rcn=6*1030.
5. Calculate the emission rate where En=2.5, Nt=1010cm-3

and fF (Et)=0.6 .
a) 15*1010
b) 1.5*1010
c) 15*1011
d) 1.5*1011
View Answer
Answer: b
Explanation: Ren=En*Nt*(fF (Et))
Substituting the values,
Ren=1.5*1010.
6. At what condition, the rate of electron capture from the

conduction band and the rate of the electron emission back
into the conduction band must be equal?
a) Thermal equilibrium
b) At room temperature
c) T=250K
d) At boiling temperature
View Answer
Answer: a
Explanation: At thermal equilibrium, the electron capture
rate and the emission rate will be same in the conduction
band.
7. Calculate the carrier lifetime when Cp=5 and

Nt=1010cm-3.
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a) 2*1011
b) 2*10-11
c) 20*10-11
d) 20*1011
View Answer
Answer: b
Explanation: τp=1/(Cp*Nt )
=1/(5*1010)
=2*10-11.
8. The number of majority carriers that are available for

recombining with excess minority carriers decreases as the
excess semiconductor becomes intrinsic. Is it true?
a) True
b) False
View Answer
Answer: a
Explanation: With the increase in the number of the majority
carriers, the carriers for the recombination will be
decreasing with the excess minority carriers and will finally
become intrinsic as the concentrations will be same.
9. Which of the following is used as the recombination

agent by semiconductor device manufactures?
a) Silver
b) Gold
c) Platinum
d) Aluminium
View Answer
Answer: b
4 of 5 3/16/18, 9:04 AM
Explanation: Gold is used as a recombination agent

because of its chemical properties as it was used in the
Bohr’s experiment. Thus the device designer can obtain the
desired carrier lifetimes by introducing gold into silicon
under controlled conditions.
10. The rate of change of the excess density is proportional

to the density. Is it true of false?
a) True
b) False
View Answer
Answer: a
Explanation: The rate of change of the excess density
depends on the density of the semiconductor and the rate
with respect to time is also dependent on it.

To practice all areas of Electronic Devices and Circuits for

Freshers, here is complete set of 1000+ Multiple Choice
Questions and Answers.
5 of 5 3/16/18, 9:04 AM
Continuity Equation - Electronic Devices and Ci... about:reader?url=https://www.sanfoundry.com/...
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Continuity Equation - Electronic

Devices and Circuits Questions
and Answers
by Manish
4-5 minutes

Questions & Answers (MCQs) focuses on “The Continuity
Equation”.
1. What does p/τ represent?

a) holes
b) time
c) holes per second lost
d) p per unit time
View Answer
Answer: c
Explanation: Option (c) represents the holes per second
lost by recombination per unit volume.
2. Which of the following is the Taylor’s expression?
a)
b)
c)
1 of 5 3/16/18, 9:04 AM
d)
View Answer
Answer: a
Explanation: Option a represents the correct formula for the
Taylor’s expression.
3. Calculate the number of coulombs per second if the area

is 4cm2, recombination rate of hole is 1000 cm-3/s and the
differential length is 2mm.
a) 1.28*10-23
b) 1.28*10-22
c) 1.28*10-21
d) 1.28*10-20
View Answer
Answer: b
Explanation: number of coulombs per second= eAdxp/τ
=1.6*10-19*4*10-4*2*10-3*1000
=1.28*10-22.
4. The current entering the volume at x is I and leaving is

I+Δi , the number of coulombs per second will be equal to
δI. Is it true or false?
a) True
b) False
View Answer
Answer: a
Explanation: Coulombs per second is known as the current.
The differential current will be the current through the
semiconductor.
2 of 5 3/16/18, 9:04 AM
5. The change in the carrier density is due to

a) Flow of incoming flux
b) Flow of outgoing flux
c) Difference of flow between incoming and outgoing flux
d) Difference of flow between incoming and outgoing flux
plus generation and minus recombination
View Answer
Answer: d
Explanation: The change in the carrier density describes the
continuity equation which is equal to the difference between
the incoming and outgoing flux plus generation and minus
recombination.
6. What of the following conditions satisfies when the

number of holes which are thermally generated is equal to
the holes lost by recombination?
a) I≠0
b) dp/dt≠0
c) g=p/τ
d) g≠p/τ
View Answer
Answer: c
Explanation: Under the equilibrium conditions, I will be zero
and then the dp/dt will aso be equal to zero in the continuity
equation. Then, g= p/τ is left which is option c.
7. What is the diffusion length for holes when Dp=25cm2/s

and τp=25s?
a) 25cm
b) 1cm
3 of 5 3/16/18, 9:04 AM
c) 0.04cm
d) 50cm
View Answer
Answer: a
Explanation: Lp=√(Dp*τp)
=√(25*25)
=25cm.
8. Which of the following represents the continuity

equation?
a) dp/dt=-(p-p0)/τp+Dp(d2p/dx2)-µpd(ρϵ)/dx
b) dp/dt=-(p-p0)/τp-Dp(d2p/dx2)-µpd(ρϵ)/dx
c) dp/dt=-(p-p0)/τp+Dp(d2p/dx2)+µpd(ρϵ)/dx
d) dp/dt=(p-p0)/τp-Dp(d2p/dx2)-µpd(ρϵ)/dx
View Answer
Answer: a
Explanation: Option a represents the correct equation of the
continuity equation for holes.
9. What is the diffusion length for electrons when

Dn=10cm2/s and τn=40s?
a) 50cm
b) 25cm
c) 20cm
d) 15cm
View Answer
Answer: c
Explanation: Ln=√(Dn*τn)
=√(10*40)
=20cm.
4 of 5 3/16/18, 9:04 AM
10. Which of the following represents the best definition for

the diffusion length for holes?
a) Average distance which an electron is injected travels
before recombining with an electron
b) Average distance which a hole is injected travels before
recombining with an electron
c) Average distance which a hole is injected travels before
recombining with a hole
d) Average distance which an electron is injected before
recombining with a hole
View Answer
Answer: b
Explanation: Diffusion length for holes is represented as the
average distance which a hole is injected travels before
recombining with an electron. It is the distance into the
semiconductor at which the injected concentration falls to
1/ϵ of its value at x=0.


and Answers.
5 of 5 3/16/18, 9:04 AM
Hall Eﬀect - Electronic Devices and Circuits Que... about:reader?url=https://www.sanfoundry.com/...
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Hall Effect - Electronic Devices

and Circuits Questions and
Answers
by Manish
3-4 minutes

Questions & Answers (MCQs) focuses on “The Hall Effect”.
1. In the Hall Effect, the directions of electric field and

magnetic field are parallel to each other.
The above statement is
a) True
b) False
View Answer
Answer: b
Explanation: To make Lorentz force into the effect, the
electric field and magnetic field should be perpendicular to
each other.
2. Which of the following parameters can’t be found with

Hall Effect?
a) Polarity
b) Conductivity
c) Carrier concentration
1 of 5 3/16/18, 9:05 AM
d) Area of the device

View Answer
Answer: d
Explanation: The Hall Effect is used for finding the whether
the semiconductor is of n-type or p-type, mobility,
conductivity and the carrier concentration.
3. In the Hall Effect, the electric field is in x direction and the

velocity is in y direction. What is the direction of the
magnetic field?
a) X
b) Y
c) Z
d) XY plane
View Answer
Answer: c
Explanation: The Hall Effect satisfies the Lorentz’s Force
which is
E=vxB
So, the direction of the velocity, electric field and magnetic
field should be perpendicular to each other.
4. What is the velocity when the electric field is 5V/m and

the magnetic field is 5A/m?
a) 1m/s
b) 25m/s
c) 0.2m/s
d) 0.125m/s
View Answer
Answer: a
2 of 5 3/16/18, 9:05 AM
Explanation: E=vxB
v=E/B
=5/5
=1m/s.
5. Calculate the hall voltage when the Electric Field is 5V/m

and height of the semiconductor is 2cm.
a) 10V
b) 1V
c) 0.1V
d) 0.01V
View Answer
Answer: c
Explanation: Vh=E*d
=5*2/100
=0.1V.
6. Which of the following formulae doesn’t account for

correct expression for J?
a) ρv
b) I/wd
c) σE
d) µH
View Answer
Answer: d
Explanation: B=µH
So, option d is correct option.
7. Calculate the Hall voltage when B=5A/m, I=2A, w=5cm

and n=1020.
a) 3.125V
3 of 5 3/16/18, 9:05 AM
b) 0.3125V
c) 0.02V
d) 0.002V
View Answer
Answer: d
Explanation: Vh=BI/wρ
=5=2/ (5*10-2*105*1.6*10-19)
=0.002V.
8. Calculate the Hall Effect coefficient when number of

electrons in a semiconductor is 1020.
a) 0.625
b) 0.0625
c) 6.25
d) 62.5
View Answer
Answer: b
Explanation: R=1/ρ
=1/(1.6*10-19*1020)
=0.0625.
9. What is the conductivity when the Hall Effect coefficient

is 5 and mobility is 5cm2 /s.
a) 100 S/m
b) 10 S/m
c) 0.0001S/m
d) 0.01 S/m
View Answer
Answer: c
Explanation: µ=σR
4 of 5 3/16/18, 9:05 AM
σ =µ/R
=5*10-4/5
=0.0001 S/m.
10. In Hall Effect, the electric field applied is perpendicular

to both current and magnetic field?
a) True
b) False
View Answer
Answer: a
Explanation: In Hall Effect, the electric field is perpendicular
to both current and magnetic field so that the force due to
magnetic field can be balanced by the electric field or vice
versa.


and Answers.
5 of 5 3/16/18, 9:05 AM

Questions On Conduction in Semiconductors

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Electrons & Holes in Semiconductor Questions ... about:reader?url=https://www.sanfoundry.com/...

Electrons & Holes in

This set of Electronic Devices and Circuits Multiple Choice

1. Which of the following expressions represents the correct

2. What is the value of the effective density of states

function in the conduction band at 300k?

Answer : c Explanation : Substituting the

4. Which of the following expressions represent the Fermi

5. Electrons from valence band rises to conduction band

6. What is the intrinsic electrons concentration at T=300K in

Answer : a Explanation : Using the formula,

d) All of the mentioned

Answer : d Explanation : From the

9. The thermal equilibrium concentration of the electrons in

Answer : c Explanation : The electrons and holes depends

Sanfoundry Global Education & Learning Series –

To practice all areas of Electronic Devices and Circuits,

This set of Electronic Devices and Circuits Multiple Choice

1. What is the SI unit of conductivity?

2. Which of the following expressions doesn’t represent the

3. Does a semiconductor satisfy the ohm’s law?

4. In which range of temperature, freeze out point begins to

concentration and conductivity decreases with lowering of

5. Which of the following expression represents the correct

6. What is the voltage difference if the current is 1mA and

7. Is resistivity is a function of temperature?

8. What is the electric field when the voltage applied is 5V

9. Calculate the average random thermal energy at

In the above figure, a semiconductor having an area ‘A’ and

Sanfoundry Global Education & Learning Series –

To practice all areas of Electronic Devices and Circuits,

Donor & Acceptor impurities -

This set of Electronic Devices and Circuits Multiple Choice

1. At what temperature the donor states are completely

2. The opposite of ionization takes place at which

3. What do you mean by the tem ‘FREEZE-OUT’?

4. Which of the following expressions represent the correct

5. Which of the following band is just above the intrinsic

6. At absolute zero temperature, which level is above the

Answer: c Explanation: At T=0 K, the tem exp(-∞)=0 in the

Thus, EF>ED So, only conduction

8. At absolute zero temperature, which level is below the

Answer: b Explanation: At T=0 K, the tem exp(-∞)=0 in the

So, only valence band lies below the

For the above n-type semiconductor, what is B knows as?

Sanfoundry Global Education & Learning Series –

To practice all areas of Electronic Devices and Circuits,

Electronic Devices and Circuits

This set of Electronic Devices and Circuits Interview

1. Is n/p=ni2 is a correct formula?

2. Calculate the number of electrons is the number of holes

3. For which type of material, the number of free electron

4. Identify the correct condition for a semiconductor to be

5. Do the Fermi energy level changes in a semiconductor?

6. Consider a silicon wafer having Nc=2.8*1019cm-3 and the

7. If Ef>Efi, then what is the type of the semiconductor?

8. The 1-fF (E) increases in which of the following band for

9. The fF (E) decreases in which of the following band for

10. Do the intrinsic Fermi energy level changes with the

Sanfoundry Global Education & Learning Series –

To practice all areas of Electronic Devices and Circuits for

Fermi Level in a Semiconductor

This set of Electronic Devices and Circuits Multiple Choice

Explanation: Rcn=CnN_t(1-fF (Et))*n