DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µ PA1707
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE

DESCRIPTION PACKAGE DRAWING (Unit : mm)

This product is N-Channel MOS Field Effect
Transistor designed for DC/DC converters and power 8 5

management applications of notebook computers. 1,2,3 ; Source

4 ; Gate
5,6,7,8 ; Drain
FEATURES
• Low on-resistance
RDS(on)1 = 10.0 mΩ (TYP.) (VGS = 10 V, ID = 5.0 A) 6.0 ±0.3
1 4
RDS(on)2 = 12.5 mΩ (TYP.) (VGS = 4.5 V, ID = 5.0 A) 4.4
1.44
5.37 MAX. 0.8
RDS(on)3 = 14.0 mΩ (TYP.) (VGS = 4.0 V, ID = 5.0 A)
1.8 MAX.

+0.10
–0.05
• Low Ciss: Ciss = 1400 pF (TYP.)

0.15
• Built-in G-S protection diode 0.5 ±0.2
0.05 MIN.

• Small and surface mount package (Power SOP8) 1.27 0.78 MAX. 0.10

+0.10
0.40 –0.05 0.12 M

ORDERING INFORMATION
PART NUMBER PACKAGE

µPA1707G Power SOP8

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) EQUIVALENT CIRCUIT
Drain to Source Voltage (VGS = 0 V) VDSS 30 V
Drain
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) ID(DC) ±10 A
Body
Note1
Drain Current (pulse) ID(pulse) ±40 A Gate Diode
Note2
Total Power Dissipation (TA = 25°C) PT 2.0 W
Channel Temperature Tch 150 °C Gate
Protection Source
Storage Temperature Tstg –55 to +150 °C Diode

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %

2
2. Mounted on ceramic substrate of 1200 mm x 1.7 mm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice.

Document No. G13084EJ1V0DS00 (1st edition)

Date Published January 1999 NS CP(K)
Printed in Japan
© 1998
 µ PA1707

ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 5.0 A 10.0 13.5 mΩ

RDS(on)2 VGS = 4.5 V, ID = 5.0 A 12.5 18 mΩ

RDS(on)3 VGS = 4.0 V, ID = 5.0 A 14.0 21 mΩ

Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V

Forward Transfer Admittance | yfs | VDS = 10 V, ID = 5.0 A 5.0 13 S

Drain Leakage Current IDSS VDS = 30 V, VGS = 0 V 10 µA

Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA

Input Capacitance Ciss VDS = 10 V 1400 pF

Output Capacitance Coss VGS = 0 V 450 pF

Reverse Transfer Capacitance Crss f = 1 MHz 180 pF

Turn-on Delay Time td(on) ID = 5.0 A 20 ns

Rise Time tr VGS(on) = 10 V 185 ns

Turn-off Delay Time td(off) VDD = 15 V 65 ns

Fall Time tf RG = 10 Ω 40 ns

Total Gate Charge QG ID = 10 A 26 nC

Gate to Source Charge QGS VDD = 24 V 4.2 nC

Gate to Drain Charge QGD VGS = 10 V 6.5 nC

Body Diode Forward Voltage VF(S-D) IF = 10 A, VGS = 0 V 0.8 V

Reverse Recovery Time trr IF = 10 A, VGS = 0 V 30 ns

Reverse Recovery Charge Qrr di/dt = 100 A/ µs 25 nC

TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE

D.U.T. D.U.T.

RL VGS IG = 2 mA RL
VGS 90 %
10 % VGS(on)
Wave Form
RG 0
PG. RG = 10 Ω VDD PG. 50 Ω VDD
ID 90 %
90 %
ID
VGS 10 %
I
D 0 10 %
0 Wave Form

τ td(on) tr td(off) tf

ton toff
τ = 1µ s
Duty Cycle ≤ 1 %

2 Data Sheet G13084EJ1V0DS00

 µ PA1707

TYPICAL CHARACTERISTICS (TA = 25 °C)

DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs.

SAFE OPERATING AREA AMBIENT TEMPERATURE
2.8
Mounted on ceramic
dT - Percentage of Rated Power - %

PT - Total Power Dissipation - W

substrate of
100 2.4 1200mm 2 ×1.7mm

2.0
80
1.6
60
1.2
40
0.8

20 0.4

0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

TA - Ambient Temperature - ˚C TA - Ambient Temperature - ˚C

FORWARD BIAS SAFE OPERATING AREA

100
d
ite
im V)
L 0 ID(pulse)
(o
n)
DS GS
=1 1m Note
R (V s
Mounted on ceramicsubstrate of 1200 mm × 1.7 mm
2
ID - Drain Current - A

10
m
10 ID(DC)
s
10
Po 0m
we s
rD
iss
ipa
tio
1 n
Lim
ite
d

TC = 25 ˚C
Single Pulse
0.1
0.1 1 10 100
VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1 000
rth(t) - Transient Thermal Resistance - C/W

100 Rth(ch-a) = 62.5˚C/W

10

0.1

Mounted on ceramic
0.01 substrate of
1200 mm 2 to 1.7 mm
Single Pulse
Single Pulse
Channel to Ambient
0.001
100 µ 1m 10 m 100 m 1 10 100 1000 10 000

PW - Pulse Width - s

Data Sheet G13084EJ1V0DS00 3

 µ PA1707

DRAIN CURRENT vs.

FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE VOLTAGE
100
Pulsed
Pulsed
50
ID - Drain Current - A

ID - Drain Current - A
10 VGS = 10 V 4.5 V 4 V
40

30
1
TA = 125˚C
75˚C 20
25˚C
−25˚C
0.1 10

0.01 VDS = 10 V
0 1 2 3 4 0 0.2 0.4 0.6 0.8
VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V

FORWARD TRANSFER ADMITTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs.

RDS(on) - Drain to Source On-state Resistance - mΩ

DRAIN CURRENT GATE TO SOURCE VOLTAGE
100
|yfs| - Forward Transfer Admittance - S

35 Pulsed

30

10 25
TA = −25˚C
25˚C 20
75˚C
125˚C 15
ID = 5 A
1 10

5
VDS =10 V
Pulsed
0 5 10 15 20 25
0.1 1 10 100
VGS - Gate to Source Voltage - V
ID- Drain Current - A

DRAIN TO SOURCE ON-STATE GATE TO SOURCE CUT-OFF VOLTAGE vs.

RDS(on) - Drain to Source On-state Resistance - mΩ

RESISTANCE vs. DRAIN CURRENT CHANNEL TEMPERATURE

VGS(off) - Gate to Source Cut-off Voltage - V

Pulsed VDS = 10 V
2.2 ID = 1 mA
30

1.8
20
VGS = 4 V
1.4
4.5 V
10
10 V 1.0

0 0.6
0.1 1 10 100 −40 0 40 80 120
ID - Drain Current - A Tch - Channel Temperature - ˚C

4 Data Sheet G13084EJ1V0DS00

 µ PA1707

RDS(on) - Drain to Source On-state Resistance - mΩ SOURCE TO DRAIN DIODE

DRAIN TO SOURCE ON-STATE RESISTANCE vs. FORWARD VOLTAGE
CHANNEL TEMPERATURE
ID = 5 A Pulsed
20 100

IF - Diode Forward Current - A

VGS = 4.0 V 4.5 V
15
10 V 10

10 VGS = 4 V 0V
1

5
0.1
0
−40 0 40 80 120 140 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tch - Channel Temperature - ˚C VSD - Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE SWITCHING CHARACTERISTICS
10000 1 000
VGS = 0 V

td(on), tr, td(off), tf - Switching Time - ns

Ciss, Coss, Crss - Capacitance - pF

f = 1 MHz
tr
Ciss
1000 100 td(off)

Coss tf
td(on)
Crss
100 10

VDS = 15 V
VGS = 10 V
10 1 RG = 10 Ω
0.1 1 10 30 100 0.1 1 10 100
VDS - Drain to Source Voltage - V ID - Drain Current - A

REVERSE RECOVERY TIME vs.

DRAIN CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1 000 40
di/dt = 100A /µs

VGS - Gate to Source Voltage - V

ID = 10 A
trr - Reverse Recovery Diode - ns

VDS - Drain to Source Voltage - V

VGS = 0 V 14

30 12
100 VDD = 24 V
VGS 10
15 V
6V
20 8

6
10
10 4

2
1 0 0
0.1 1 10 100 0 4 8 12 16 20 24 28 32
ID - Drain Current - A QG - Gate Charge - nC

Data Sheet G13084EJ1V0DS00 5

 µ PA1707

[MEMO]

6 Data Sheet G13084EJ1V0DS00

 µ PA1707

[MEMO]

Data Sheet G13084EJ1V0DS00 7

 µ PA1707

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document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
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copyrights or other intellectual property rights of NEC Corporation or others.
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
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a customer designated "quality assurance program" for a specific application. The recommended applications
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device before using it in a particular application.
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Anti-radioactive design is not implemented in this product.

M4 96. 5
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