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WIDEBAND
RF POWER
AMPLIFIER
PrepanedBy
H.O. Granberg
MotonolaSemiconductorPnoductsSector
ncvnaRoLA
Semlconductor Productslnc.
WidebandRF PowerAmplifier
This Amplitier OperatesOver A Wide Range Of
Supply Voltages.
By H.O.Granberg
Motorola Semiconductor Produ cts
A singleamplifiercoveringfrequencies
from HF to VHFat a poweroutputlevel
of 300 wattswouldhavebeenconsidered
impossibleor impracticala fewyearsago.
This wouldstiilbe true if not for the ad-
vancesin power FET technology.
Thisarticlecoversthe designaspects
of a 300 wattunit witha frequencyrange
of 10to 150MHz.
f he MRF141G, usedin thisdesign,is
I housedin a specialpush-pull header
commonlyknownas "Gemini"(twins),
meaningthattherearetwoidentical tran-
sistorsmountednextto eachotheron a
commoncarrieror a flange.Thereare
transistors (mainlyFETs)available in the
Geminitypepackages ratedfrom20watts
to 300watts.The lowerpowerunitscan
be usedto frequencies of 1 GHz and
higher,whilethe 100-150 wattunitsare Figure1. Overallview of the 300 watt, 10-150MHzamplifier.Separate
designedto operateup to 500-600MHz. circuit boards arc used for the input (left) and the output.
Theadvantages of a push-pull package
suchas theGeminibecomeapparent at and fowerpowerversionswith the T0-220 of thegateperiphery to thechannelarea)
higherfrequencies, wherethe normal plasticunits.With a given die geometry, thanin the switching powerFETs.This
push-pullconfiguration with discrete a FET has approximatelyfour times reducesthe devicecapacitances auto-
devices wouldbe impractical. Inthepush- higherunitygain frequencythan a bipolar matically.Furtherreductionisachievedby
pullcircuitconfiguration the criticalfac- transistor.This explainsthe fact that even splittingthe die intoa multipleof cells
tor is themutualinductance between the the largerlow frequencypowerFETsmay (groupsof sourcesitesandgatefingers)
twopush-pullhalves,and notthe device have 10 dB or more power gain at 30 wherethe gatesand sourcesare con-
to groundinductance, as is the casein MHz,wherea similarbipolarcounterpart nectedin groupsof two or four by in-
singleendeddesigns. TheGeminior any wouldbe totallyunusable.The difference dividualbondingwiresto the common
otherpush-pull transistor housingpermits is mostlyin the figureof meritof the die packageterminals.For example,in the
theminimization ofthemutualinductance itself,which is the ratioof feedbackcapa- MRF141G oneof thetwodie consists of
to a levelthatapproaches the ultimatein citanceto the input capacitanceor im- 36 cellseachhavingaround70individual
physicalterms. pedance.(This should not be confused smallFETs,makingthetoJalabout2,500.
Therearea coupleof penalties wemust with the morecommonbasearea/emitter In switchingpowerFETs,the connec-
payfor all this.One is a slightlyhigher peripheryfigureof merit die designfor- tionsto the numerous sourcesitesand
costwhencompared to twodiscrete units mula.)With bipolartransistorsthe feed- gatesaremadewithmetalpatternon the
dueto matching procedures involved and back capacitance(collectorto base)is not diesurfacewhichallowstheuseof single
lower productionyields resultingfrom usuallyspecified,but it is 15-20times large diameterbondingwires for the
doublethe possiblerejectrate.Another higherthan the drainto gatecapacitance sourceandgatecontacts. Theincreased
one is the reducedthermalcharacteris- of a comparableFET,whilethe base/gate metal area resultsin increasedMOS
tics.Twiceas muchdissipatedpoweris inputimpedancesbecomeaboutequalat capacitance andreflects to thedevicein-
concentrated virtuallyin thesameareaas increasedfrequencies.This feedback put (CrsJ,feedback(C6sj and output
in the caseof a discretedesign,leading capacitancenormallyproducesfeedback (CesJ capacitances. The transconduc-
to specialcoolingrequirements. within the device itself, whose exact tanceof a MOSFETgo is a measureof
phaseangledependson the capacitance size.Thus,a goodindication
itselectrical
About Power FETs values and other parameters. ofthehighfrequency performance canbe
Therehavebeendesignsof highpower In FETsdesignedspecificallyfor RF,the obtainedby comparingthe capacitance
HF amplifiersusingthe T0-3packages, die geometryis usuallyfiner (largerratio values(especially Cssj of deviceswith
back to the gate through Cqss in
amplitudesthat can rupture the gate-
sourceoxide layer.The rupturewill first
occurin the far end of the die,awayfrom
the gate terminal.Since the gate resis-
tanceis internalto the FET die, external
limitingor clampingcircuitsat the gateare
of no help.The gateof a MOSFETis the
most sensitivepart of the device,which
can be permanentlydamagedeven by
static charges during the handling.
I'I
Althoughthe largerFETs(100-150 W), due
to their highergate capacitance, are not
as vulnerable as the smallerones,proper
orecautionsshould be exercised.
Rl - 1Kv2W Ll - l0 Turns AWG #16 EnameledWire. 5mm lO
A2 - lOKvrW L2 - Fe(ile Eeads over AWG #16 Wire, 1 5 uH
83 - 330 Ohms/2w lotal Designand Construction
R4 - lK T.impot L3. L4 - Lead Lengths ol RO and R9, 20mm lolal
R5 - 6Bl(YrW FET - i/BF14IG As discussed earlier, the common
R6 - Thermislor, 10K at 25'Cl2 5K at 75'C T1 - 9:1 RF Translorm€r(rl5-25Ohm, I 2-16mm modeinductancein a push-pullcircuitis
R7 - ZKVzW O D semi rigid coax ) Magnetic Cor€ Re.
R8, R9 - EMC Technology Type 5310 or KOI Pyrofilm quired: FairRils Producls Corp not critical,and the groundpath is only
Type PPR 515-20.3 Power Resistors, 25 #94610120029351021002 E and | (2 ea )
Ohms Types, Bespeclively, or Equivalsnt usedfor DC feedto the amplifier. The in-
Cl, C9 - ARCO 402, 1 5-2OpF Compression Mica ol T2 - 1:9 RF Translormer(15-25Ohm. I 8.2 3mm put and outputimpedancelevelsare es-
equivalenl OO semi ngid coax ) For Magnetic Core
C2 - 2O09F Ceramic Chip See Texl tablishedfrom gate to gate and drain to
C3 - 0luF Ce.amic Chip
C4, C5, C12 - 1000pFCeramic Chip Note: All chip caoacitorsof 001uF and less in drainrespectively. This allowsthe circuit
C6, C7 - 001uF Ceramic Chip vatue are ATC type 100 or equivalent board,whichis madeof the standard1.6
C8 - 0 47uF Ceramic Chip or lower values in
pa.allel lor lhe value indicaled mm G10material,to be splitintotwo sec-
C13 - 300pF,2x15OpFor 100pF and 200pF
Ceramic Chips in parallel tions.One carriesthe inputmatchingnet-
workand part of the bias circuit,whilethe
secondsectionholdsthe outputmatching
Figure2. Schematicof the amplifier. network,the biasset and the drainvoltage
similartransconductances. imately0.1ohms.In the switchingpower feed and filteringcircuitry.(See Figures
Another fact to mention is the gate FETS,the polycrystal siliconis appliedin 1 and 2). In additionto allowingwider
resistance.Most modernpowerFETsuse a sheet form in a separatelayer,but the designflexibility,this arrangementalso
a gate structureof polycrystalsilicon, distancebetweenthe metallization and simplifiesthe repairand maintenance of
which can have a bulk resistancecom- the farthestgate still resultsin at least the unit, if required.
parableto carbon.lt is also usedas a con- 30-40times highergate resistancewith The two circuit boards includingthe
ductor beiween the metal pattern and a die of comparablesize. space betweenthem for the FET meas-
each individualgate. In the RF power In highfrequencyapplications the high ures 115x 75 mm. Theyare mountedon
FETs,eachgate is fed througha separate gateresistancepermitsa partof the drain- a copperplatewiththe samedimensions
contact having a resistanceof approx- sourceRF voltageor transientsto be fed havinga thicknessof 6 mm. The input
and output connectors (SMA) are
mountedto the edgesof the copperplate.
Theycan also be placedat a remoteloca-
tionwith coaxconnectionsto the amplifier
utilizingany connectorsthat have good
RF characteristics such as BNC.
Due to the large amount of heat con-
centratedin a small area in the form of
dissipatedpower,it is importantthat the
copper plate be employed as a heat
spreaderunless the heat sink itself is
made of copper.The heat spreadercan
then be boltedto a pieceof aluminumex-
trusionwith thermalresistanceof 1oCAff
or less for normal intermittentoperation
without forced air cooling. The heat
spreader and the extrusion surfaces
should be flat without any burrs, and
siliconethermalcompoundmust be ap-
pliedto the interface.The same practices
shouldbe followedin mountingthe FET
Figure3. The componentlayoutdiagram.The only critical component intothe heatspreader.lf the FET gate and
locationsarc those ol C2 and C13.They must be solderedin place(Vz drain leadsare bent sharplyup alongthe
of C13)beforethe mountingof the input-outputtransformers. packagesides,they will be alignedalong
I
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n o t a s s u m ea n y l i a b i l i t ya r i s i n go u t o f t h e a p p l i c a l i o no r u s eo f a n y p r o d u c lo r c i r c u i id e s c r i b e dh e r e i n n
: e i t h e rd o e si l c o n v e ya n y l i c e n s eu n d e ri t s
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