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Answer: a
Explanation: For a BJT, the input characteristics is given by
a plot between VBE and IB.
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c) VCB and IC
d) None of the mentioned
View Answer
Answer: c
Explanation: For a BJT, the output characteristics is given
by a plot between VCE and IC.
Answer: b
Explanation: If the collector-base junction is reverse-biased
and the base-emitter junction is forward-biased,then the
BJT functions in the active region of the output
characteristics.
Answer: a
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Answer: c
Explanation: If the collector-base junction and the base-
emitter junction are both reverse-biased,then the BJT
functions in the cutoff region of the output characteristics.
a) 3 mA
b) 3.4 mA
c) 0 mA
d) None of the mentioned
View Answer
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Answer: b
Explanation: At the intersection of IB=30 uA and VCE=10 V,
IC=3.4 mA.
a) 3.4 mA
b) 0 mA
c) 2.5 mA
d) 10 mA
View Answer
Answer: c
Explanation: From the characteristics, the value of IB at
VBE=0.7V is 20uA. Now, from IB=20 uA, we get IC = 2.5
mA.
Answer: a
Explanation: α and β are related as β=α/(1-α).
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Answer: b
Explanation: When the value of IE is zero, then the value of
IC is equal to ICBO which is in the order of microamperes
but not zero.
Answer: d
Explanation: All the relations hold true i.e. IC = βIB and IC =
αIE. As α<1, hence IC < IE
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Answer:c
Explanation:A BJT is a device with a layer of semiconductor
sandwitched between 2 unlike types of semiconductors and
hence, PPN is not a valid type of a BJT.
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View Answer
Answer:a
Explanation: In a BJT, the thickness of the middle layer or
the base is thin as compared to the collector and emitter.
Answer:b
Explanation: In a BJT, emitter is heavily doped whereas
base and collector are lightly doped.
Answer:c
Explanation: As the base is lightly doped, the number of
free charge carriers are less and hence the resistance is
high and as the emitter is the most highly doped, its
resistance is low.
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Answer: b
Explanation: On application of a forward bias voltage across
E-B junction, the width of the depletion region decreases.
Answer:a
Explanation: In a BJT, one junction is forward biased and
the other is reverse biased depending upon the type of the
transistor.
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d) 10 -3
View Answer
Answer:c
Explanation: As the base current is quite lower as
compared to the collector and emitter current, it is usually in
the order of microamperes.
Answer:b
Explanation: The collector current I C in a BJT is made up of
two components – one due to majority carriers and the
other due to minority carriers. The component of IC due to
minority carriers i.e ICO is temparature sensitive.
Answer:c
Explanation: Leakage current in a BJT is the name given to
ICO, which is due to the flow of minority carriers.
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a) IE + IB = IC
b) IC + IB = IE
c) IE + IC = IB
d) None of the mentioned
View Answer
Answer:b
Explanation: On applying KCL to the BJT, we get IC + IB =
IE.
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Answer: c
Explanation: Power Dissipation in a BJT is given by
P=VCE.IC. This is in the form of k=xy which is the equation
of a hyperbola.
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Answer: b
Explanation: The region below IC = ICEO is called the cutoff
region.
Answer: c
Explanation: The region below VCE < VCEsat is called the
saturation region.
a) 0.3 V
b) 1 V
c) 5 V
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Answer: a
Explanation: From the given characteristics, it is evident
that the VCEsat is closest to 0.3 V.
Answer: b
Explanation: P=VCE.IC => 300mW = (12V)IC => IC=300/12
mA = 25 mA.
Answer: a
Explanation: P=VCE.IC => 300mW = VCE(50 mA) => VCE =
300/50 = 6 V.
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a) 150
b) 180
c) 250
d) 120
View Answer
Answer: b
Explanation: From the curve, we get change in IC =
(8.2-6.4) mA and change in IB = 10 uA. Hence, /beta; =
(1.8/0.01) = 180.
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Answer: a
Explanation:If the positive lead of a DMM, with the mode
set to ohmmeter is connected to the base and the negative
lead to the emitter and a low resistance reading is obtained,
then what is the type of transistor that is being tested is
npn.
Answer: a
Explanation:If the positive lead of a DMM, with the mode
set to ohmmeter is connected to the base and the negative
lead to the emitter and a low resistance reading is obtained,
then what is the type of transistor that is being tested is
npn.
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a) ECB
b) BCE
c) CEB
d) The device is not a transistor
View Answer
Answer: b
Explanation: With the curved side facing away the correct
lead sequence is base, collector, emitter.
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Answer: d
Explanation: For a BJT, the collector and emitter current are
related as IE = (β + 1) IB.
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c) Saturation region
d) None of thye mentioned
View Answer
Answer: a
Explanation: Operating point for a BJT must always be set
in the active region to ensure proper functioning. Setting up
of Q-point in any other region may lead to reduced
functionality.
a) 47.08 mA
b) 47.08 uA
c) 50 uA
d) 0 mA
View Answer
Answer: b
Explanation: We know that IBQ = (VCC – VBE)/RB =
11.3/240 uA = 47.08 uA.
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a) 7 V
b) 0.7 V
c) 6.83 V
d) 7.17 V
View Answer
Answer: c
Explanation: VCEQ = VCC – ICRC. Hence, VCEQ = 6.83 V.
a) 6.13 V
b) -6.13 V
c) 7 V
d) -7 V
View Answer
Answer: b
Explanation: VBC = VB – VC = VBE – VCE = -6.13 V.
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a) 5 mA
b) 5.45 mA
c) 4.54 mA
d) 10.9 mA
View Answer
Answer: b
Explanation: Saturation collector current = VCC/RC = 5.45
mA.
a) 2.01 mA
b) 2.01 uA
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c) 10.05 mA
d) 10.05 uA
View Answer
Answer: a
Explanation: β IB = 2.01 mA.
a) 20 V
b) 13.97 V
c) 14.98 V
d) None of the mentioned
View Answer
Answer: b
Explanation: VCE = VCC – ICRC = 13.97 V.
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a) 12.01 V
b) 1.01 V
c) 0 V
d) 2.01 V
View Answer
Answer: d
Explanation: VE = VC – VCE = 2.01 V.
a) 10 mA
b) 8.77 mA
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c) 6.67 mA
d) None of the mentioned
View Answer
Answer: c
Explanation: Saturation collector current = VCC/(RC + RE) =
6.67 mA.
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