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March 2014
FGL60N100BNTD
1000 V, 60 A NPT Trench IGBT
Features General Description
• High Speed Switching Using Fairchild's proprietary trench design and advanced NPT
• Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A technology, the 1000V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
• High Input Impedance
easy parallel operation. This device offers the optimum perfor-
• Built-in Fast Recovery Diode
mance for hard switching application such as UPS, welder
applications.
Applications
• UPS, Welder
G C E
TO-264 3L
E
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Parameter Ratings Unit
o
RJC(IGBT) Thermal Resistance, Junction to Case 0.69 C/W
o
RJC(Diode) Thermal Resistance, Junction to Case 2.08 C/W
oC/W
RJA Thermal Resistance, Junction to Ambient 25
Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA 1000 - - V
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 1 mA
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±500 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 60 mA, VCE = VGE 4.0 5.0 7.0 V
IC =10 A, VGE = 15 V - 1.5 1.8 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 60 A, VGE = 15 V, - 2.5 2.9 V
Dynamic Characteristics
Cies Input Capacitance - 6000 - pF
Coes Output Capacitance VCE = 10 V, VGE = 0 V, - 260 - pF
f = 1MHz
Cres Reverse Transfer Capacitance - 200 - pF
Switching Characteristics
40
40
30
7V
20 20
10
VGE = 6V
0 0
0 1 2 3 4 5
0 1 2 3 4
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]
Figure 3. Saturation Voltage vs. Case Figure 4. Saturation Voltage vs. VGE
Temperature at Variant Current Level
10
Common Emitter Common Emitter
VGE=15V O
T C= - 40 C
Collector-Emitter Voltage, VCE [V]
3 8
Collector-Emitter Voltage, VCE[V]
80A
60A
6
2 30A
4
30A 60A
80A
2
IC=10A
IC=10A
1
0
-50 0 50 100 150
4 8 12 16 20
Case Temperature, TC [℃] Gate-Emitter Voltage, V GE [V]
Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE
10 10
Common Emitter Common Emitter
TC = 25℃ TC = 125℃
8
Collector-Emitter Voltage, VCE [V]
8
Collector-Emitter Voltage, VCE [V]
6 30A
6
60A
30A 80A
4 60A
4
80A
2 2
IC = 10A IC = 10A
0 0
4 8 12 16 20 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]
100 100
Cres
Common Emitter
VGE = 0V, f = 1MHz
T C = 25℃
0 5 10 15 20 25 30 10
0 50 100 150 200
Collector-Emitter Voltage, VCE [V]
Gate Resistance, RG [? ]
15
Gate-Emitter Voltage,VGE [V]
Tdoff
Switching Time [ns]
Tf 10
Tr
5
100
Tdon
0
10 20 30 40 50 60 0 50 100 150 200 250 300
100
IC MAX. (Pulsed)
100
IC MAX. (Continuous)
50us
TC = 100 ℃
Forward Current, IF[A]
Collector Current , I C [A]
100us 10
10
1ms
DC Operation TC = 25 ℃
1
1 Single Nonrepetitive Pulse
T C = 25℃
Curve must be darated
linearly with increase
in temperature
0.1 0.1
1 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5
Collector-Emitter Voltage, V CE [V] Forward Voltage, VFM [V]
Figure 13. Reverse Recovery Characteristics Figure 14. Reverse Recovery Characteristics
vs. di/dt vs. Forward Current
1.19 119
IF =60A d i/d t= -2 0 A /u s
1 .2 T C=25 ? 12
T C =25?
0.34 34 0 .6 6
0.17 Irr 17
0 .4 4
0.00 0
0 40 80 120 160 200 240 10 20 30 40 50 60
di/dt [A/us] F o rw a rd C urre nt, IF [A ]
Figure 15. Reverse Current vs. Reverse Voltage Figure 16. Junction Capacitance
1000 250
T C = 25 ℃
100
TC = 150℃ 200
Reverse Current, IR [uA]
Capacitance, Cj [pF]
10
150
1
100
0.1
T C= 25℃
0.01 50
1E-3
0
0 300 600 900
0.1 1 10 100
Reverse Voltage, VR [V] Reverse Voltage, V R [V]
1 0
[℃/W]
1
THJC
0 .5
Thermal Response, Z
0 .2
0 .1 0 .1
0 .0 5
0 .0 2 PDM
0 .0 1 t1
0 .0 1 t2
s in g le p u ls e
1 E -3
-4 -3 -2 -1 0 1
1 0 1 0 1 0 1 0 1 0 1 0
R e c ta n g u la r P u ls e D u r a t io n [s e c ]
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Rev. I66
Authorized Distributor
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FGL60N100BNTD FGL60N100BNTDTU