Professional Documents
Culture Documents
2I D VA
For a MOSFET: gm ; r0 ;
VOV ID
For a cascode MOSFET the multiplying factor K for the resistance step up we have
2I DV A
Equation (8.72) gives K g m r0
VOV I D
2V A
V A 50 5 volts
VOV
(b) If the process technology specifies V’A as 5 V/m, what channel length L must the
transistor have?
V A 5 volts =V A' L V
and for V A' 5 μm implies L 1 μm
(b) Next, consider the case of transistors having |VA| = 4 volts and operated at |VOV | =
0.2 volt. Also, let nCOX = 100 A/V2. Find the W/L ratios required and the output
resistance realized for different two currents: (1) I = 0.1 mA and (2) I = 0.5 mA. Assume
that VSD for both devices is the minimum voltage required, that is, VSD = |VOV |.
Using V 0.1
L
Page
W
50
L
2I D 2 0.5
For case (2), I = 0.5 mA, so g m 5 mA/V
VOV 0.2
VA 4
r0 8 k; RO g m (r0 )2 0.005 (8000)2 320 k
I D 0.5
W W
5 mAV
2
Using 25 2 0.1 0.5 L 250
L
3
Page
Given: I 0.2 mA; VOV 0.2 volt; V A 4 volts
We want to find g m 1 , Ro ,p , Ro ,n and AV .
All four devices are identical (same g m and r0 for each).
2I D 2(0.2)
gm 2 mA
VOV 0.2 V
VA 4
r0 20 k and Ro ,n Ro ,p (g m r0 )r0
I D 0.2
Ro ,n Ro ,p (0.002 20000 ) 800 k;
2
RO (Ro ,n Ro ,p ) 400 k
AV g m RO 0.002(400000) 800 V V
Here we ground the input terminal (i.e., reduced vi to zero via a ground connection), and
apply a small change voltage vx to the output node. We call the voltage change that
results at the drain node of Q1 by vy. Find by what factor is voltage vy smaller than
voltage vx? This ratio can be thought of as the “shielding factor.”
I = 0.1 mA; = 125; nCOX = 400 A/V2 ; W/L =25; VA = 1.8 volts
Page
(a) For circuits (a) and( b), determine the parameters Rin, RO and AVO.
V A 1.8
r01 18 k
I D 0.1
IC 0.1 V A 1.8
gm 2 4 mA/V and r02 18 k
VTH 0.025 I C 0.1
125
r 2 31.25 k
gm 2 4
R in ; RO g m 2r02 r01 r 2 4 18 11.42 822.3 k
and AV 0 g m 1 RO 1.41 822.3 1159 V V
Circuit (b) -- FET Q1 with cascode FET transistor Q 2 :
V A 1.8
r01 18 k. Both FETs are identical, so g m 2 g m 1
6
I D 0.1
Page
and r01 r02 18 k
Rin ; RO g m 2r02r01 1.41 18 18 456.9 k
and AV 0 g m 1 RO 1.41 456.9 644 V
V
Summary of parameters:
(b) Comment on your results – what do you conclude about circuits (a) and (b)? For
example, which has the higher gain AVO? What are the tradeoffs to obtain this?
The circuit with the cascode bipolar transistor has the higher voltage gain.
7
Page