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Unit 3 -
Introduction to Fabrication Technolgy
Course
outline Week 3 Assignment 3
Due date for this assignment: 2018-02-14, 23:59 IST.
Introduction to
1) What is the sequence of steps involved in CVD process? 1 point
IC Fabrication
Technology A. Transport of gas species to surface of substrate
B. Reaction of gas precursor with surface
Introduction to C. Deposition of oxide on substrate
IC Fabrication D. Absorption of gas precursor into the surface
Technology E. Removal of unwanted products and excess reactants
Introduction to A, E, B, C, D
Fabrication B, D, C, E. A
Technolgy
A, D, B, C, E
Introduction to B, A, E. D, C
fabrication
technology 2) Which of the following option is true for PECVD? 1 point
A. RF voltage is used to create plasma
Introduction to
fabrication B. Temperature of the PECVD chamber is lesser than LPCVD
technology C. Good step coverage
Contd… D. PECVD is done at atmospheric pressure
Introduction to
A. B, D
fabrication
technology A. C, D
Contd… A, B, C, D
Introduction to A. B, C
fabrication
technology 3) Arrange the following SiO2 layers according to their thickness 1 point
Contd… A. Masking oxide layer
B. Field oxide layer
Quiz : Week 3
Assignment 3
C. Native oxide layer
D. Gate oxide layer
Introduction to
Fabrication A>B>D>C
Technolgy B>A>D>C
Introduction to
A>B>C>D
Fabrication B>A>C>D
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2/14/2018 Integrated Circuits, MOSFETs, OP-Amps and their Applications - - Unit 3 - Introduction to Fabrication Technolgy
Technology 4) Why dry oxidation is used for deposition of gate oxide ? 1 point
Contd… A. Easy to deposit
Process Flow B. Less number of defects
for Fabrication C. Precise oxide thickness can be achieved
of MOSFETs D. Higher possibility of dielectric breakdown
Operation of
A, B
Enhancement
Type A, D
MOSFET C, D
Operation of B, C
Depletion
Type 5) In sputtering process, polarity of target is kept _____________ with respect to 1 point
MOSFET substrate and why ?
Quiz : Week 4
Positive, so that electron can detach the atoms from the target
Assignment 4
Positive, so that Ar+ ions can detach the atoms from the target
DOWNLOAD Positive, so that Ar- ions can detach the atoms from the target
VIDEOS
Negative, so that Ar+ ions can detach the atoms from the target
6) Which method is generally preferred for deposition of 2% Si doped aluminium as metal 1 point
contact in IC fabrication?
Thermal evaporation
PECVD
E-beam evaporation
LPCVD
Sputtering
PECVD
E-beam evaporation
LPCVD
Thermal oxidation
Sputtering
ALD
LPCVD
Chromium
Zinc
Gold
Tungsten
10)Which of the following metals cannot be deposited using thermal evaporation ? 1 point
A. Tungsten
B. Molybdenum
C. Iron
D. Aluminium
A, C, D
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2/14/2018 Integrated Circuits, MOSFETs, OP-Amps and their Applications - - Unit 3 - Introduction to Fabrication Technolgy
B, C, D
A, B, C
A, B, D
12)Which method is used in IC fabrication for deposition of dielectric materials (e.g.: 1 point
SiO2, Si3N4, SiC) ?
A) CVD
B) Sputtering
C) E-beam evaporation
D) Electrode deposition
A, D
A, B
C, D
B, C
450 MHz
450 KHz
13.56 KHz
13.56 MHz
You may submit any number of times before the due date. The final submission will be
considered for grading.
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2/14/2018 Integrated Circuits, MOSFETs, OP-Amps and their Applications - - Unit 3 - Introduction to Fabrication Technolgy
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