II.

MICROESTRUCTURAL EVOLUTION

II. A. Grain subdivisión

· Extended nearly planar boundaries.
· Almost randomly oriented cell boundaries.
· Cell blocks.
· Geometrically necessary boundaries (GNBs).
· Incidental dislocation boundaries (IDBs).
· Wavy (distributed) glide materials, such as FCC single crystals and polycrystals with medium to high stacking fault energy (SFE) and BCC.
· Wavy slip band structure indicates a tree-dimensional mobility of dislocations by cross-slip.
· Planar glide materials, such as low-SFE metals and several alloys.
· Change in process parameters, which affect the slip pattern.

II. B. Cold deformation

· Slip plane, or another crystallographic plane which is related to a slip plane.
· Rolling texture.
· Low to high-angle boundaries.
· The microstructural transitions has been related to the occurrence of localized glide.

II. C. Hot deformation

· Dense dislocations walls.
· Plane strain compression.
· Microbands.
· Increased mobility of dislocation boundaries as their misorientation angle increases with increasing strain.
· Energy gain as the boundary energy per unit volume is reduced in parallel with the evolution of the equiaxed structures.
· Average boundary spacing.

II. D. Macroscopic subdivision

· Deformation bands / matrix bands.
· Transition bands.

III. DISLOCATION BOUNDARIES

III. A. Boundary classification

· Cell boundaries haven been termed “incidental dislocation boundaries”, because they are assumed to form by mutual trapping of glide dislocations.
· Extended boundaries haven been termed “geometrically necessary boundaries”, because they are assumed to form by a different slip activity on each side
of the boundary.
· Slip systems.
· 5 slip systems are required to make any shape change required for homologous deformation.
· Fewer slip systems may be active within each cell block to minimize the energy associated with a large number of intersecting slip systems.
· Flow stress.
· Dislocation jog.
· Thermal activation leads to a decrease in work-hardening rate.
. Thermal activation may also lead to activation of slip on systems other than {111}, resulting in a more homogeneous deformation at higher temperatures.
· The evolution of misorientation angle with strain suggests a power-law relationship for both IDBs and GNBs, but with significantly different exponent.

III. B. Evolution of misorientation angles and boundary spacings

· Stochastic process.
· Deterministic process.
· Misfit dislocation.
· Cell boundaries/IDBs are formed by statistical fluctuations.
· Extended boundaries/GNBs are formed by a joint operation of statistical fluctuations, activation imbalance and formation of misfit dislocations.

III. C. Low-energy dislocation structures

· Long-range stresses.
· Low energy dislocation structures (LEDS)

III. D. Slip pattern

· Slip pattern.
· Extended boundaries in single crystals oriented for single or double slip deformed in the stage II region showed correlation between slip pattern and
deformation microstructure: the boundary plane is almost parallel to a primary slip plane.
· Extended boundaries are a common feature of most deformation microstructures.
·

III. E. Crystallographic and macroscopic orientation