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w a v e f r o n t s e n s i n g o n E LTs - h i g h r a t e , l a r g e f o r m a t , a n d l o w n o i s e
Paul Jorden
Co-authors: D Bourke, R Cassidy, M Fryer, P Jerram, S Moore, J Pratlong
Teledyne e2v UK
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CONTENTS
Teledyne e2v sensors for Adaptive Optics
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Introduction
Silicon detectors for wavefront sensing as components of AO systems
• We discuss here silicon sensors for Shack Hartmann wavefront sensing
CMOS sensors offer high performance- comparable to CCDs in sensitivity and exceeding CCDs in data rate
• The Large Visible Sensor Module (LVSM)- a new large-format custom CMOS sensor- is presented
Other specialised CMOS sensors- for astronomy and space use- are also presented
All CCD and CMOS sensors discussed here are back-thinned for highest quantum efficiency
• Teledyne e2v has also developed significant capacity for supply of sub-systems- for space and astronomy use
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Sensor evolution
From small CCDs to large CMOS sensors: 1000 frames/sec Each detector requires a new company logo!
CCDs
(1995- onwards) CCD50
128X128
CMOS
(2010- onwards) &
CCD39 80X80
EM CCD60
128X128
EM CCD220 240X240
NGSD CIS112 880X840
LVSM CIS124 800X800
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Sensor evolution-2
Silicon detectors need to get larger as telescopes increase in size
Frame rates are in the 200 - 1000 frames per second range
Small traditional CCDs can read out at adequate rates with low noise
Larger CCDS need higher pixel rates which would increase the read noise requires EMCCD design
The largest telescopes have more sub-apertures and need larger sensors
CMOS sensors offer large format, high frame rate, and low read noise
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CCD and CMOS WFS sensors
Overview of key features All sensors have 24 X 24 μm pixels and 90% back-thinned QE
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A new CCD standard product
Before we get to CMOS sensors- CCD351: a new standard product
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Lar ge Vi si bl e Wavef r ont Sensor - 1
CIS124: A new CMOS sensor- in development for large telescopes
Key features
• 800 × 800 pixels: 80 × 80 sub-apertures of 10 × 10 pixels each.
• Back illuminated for highest QE and best intra-pixel uniformity.
• 24 µm square pixels
+ Each sub-aperture is 240 µm square.
• 700 fps specified continuous readout (with 1000 fps goal).
+ Lower frame rates/ longer integration times are also available.
• < 3 e– rms total readout noise.
• Nominal operating temperature –10 °C to minimise dark current.
• Rolling shutter for lowest noise.
+ Parallel architecture allows low noise bandwidth with high frame rate.
• On-chip ADC giving digital outputs in LVDS.
• Low cross-talk and high uniformity between pixel readout paths.
• Hermetic package with internal Peltier cooling.
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Lar ge Vi si bl e Wavef r ont Sensor - 2
Pixels and ADC
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Lar ge Vi si bl e Wavef r ont Sensor - 3
ADC and data output
• Each ADC block has a single row, but the channel pitch is one quarter of the pixel pitch to
allow two groups of four rows of pixels to be quantised in parallel.
• Pixel output tracks (columns) are in sets of four.
• Good non-synchronicity within each sub-aperture (< 2%).
• Low latency within each sub-aperture (< 2% of exposure time).
• LVDS outputs for image data, dark reference pixels and data synchronisation.
• Multiple test and diagnostic features for both factory and field use.
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Lar ge Vi si bl e Wavef r ont Sensor - 4
Pixel read and data output
row read sequence
Pixel read
• ADC quantises all pixels of a four-row group simultaneously.
Data output
• Data read out in raster format.
Figure illustrates last 24 rows and adjacent ADC block. Figure is for lower half of LVSM. Upper half is a mirror image.
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Lar ge Vi si bl e Wavef r ont Sensor - 5
Timing features- for high rate, low latency, and efficient operation
• Optional on-chip PLL for fast clocks to ADC and data output.
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Lar ge Vi si bl e Wavef r ont Sensor - 6
Back-illumination for high spectral response and good uniformity
• With front illumination the front face features on CMOS image sensors reduce both photo-
response uniformity and overall QE
• Back illumination allows a good AR coating to be used and then typically gives around 90 %
QE at visible wavelengths. These sensors have a uniform detection surface and give superior
intra-pixel uniformity compared to front illuminated sensors.
Typical BI QE curve:
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Lar ge Vi si bl e Wavef r ont Sensor - 7
Back-thinning metal shield
Metal will be deposited on the back surface to make dark reference pixels and also to shield the read circuits
from light.
+ The figure shows a CIS112 sensor with metal shield and the non-reflective AR coated surface of the image
area:
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Lar ge Vi si bl e Wavef r ont Sensor - 8
Package
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CMOS sensors for astronomy-1
CIS113
Developed for the TAOS-II project. Number of pixels 1920 (H) × 4608 (V)
Pixel size 16.0 µm square
Development complete; 40-off devices delivered
Image area 73.73m × 30.72 mm
Output ports (analogue) 8 (REF and SIG each)
Package size 82.39 mm × 31.7 mm
Package format 76 pin ceramic PGA attached to invar base
Focal plane height 14.0 mm
Flatness < 30 µm (peak - valley)
Conversion gain 75 µV/e
Readout noise 3 e at 2 MP/s per ch.
Maximum pixel rate 2 MP/s per channel
Maximum charge 22,000 e per pixel
Dark signal 70 e/pixel/s (at 21 C)
Frame rate 2 fps (full frame mode) 20 fps (~1000 ROI’s)
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CMOS sensors for astronomy-2
Onyx EV76C664
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CMOS sensors for astronomy-3
CIS115 Key Features
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CMOS sensors for astronomy-4
Red sensitive CMOS
Demand for thick (>100 µm), fully depleted CMOS sensors for high QE
Near-IR imaging for astronomy, Earth observation, hyperspectral imaging, high speed imaging,
spectroscopy, microscopy and surveillance.
Soft X-ray (<10 keV) imaging at synchrotron light sources and free electron lasers requires substrate
thickness >200 µm
Low voltage CMOS sensors normally have small depletion depths
Key Features
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Systems
We also do systems for space and ground applications
J-PAS Cryocam: A 1.2 Gigapixel cryogenic camera World Space Observatory UV Spectrograph sensors & electronics
• 450 mm focal plane with 14 science CCDs; flat to 27 µm • Three custom sensor channels for 115-310 nm range
• 224 synchronous readout channels with < 5 e- noise • Sealed vacuum cryostat enclosures for 9 year life
• Integrated vacuum cryogenic system & thermal control • Flight electronics (associated with RAL Space)
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References & acknowledgements
www.teledyne-e2v.com for datasheets and further information (CCD351, CIS113, CIS115, Onyx EV76C664, etc)
CIS113 Pratlong J, et al, A 9 Megapixel large-area back-thinned CMOS sensor with high sensitivity and high frame rate
for the TAOS II programme. Proc SPIE 9915, 991514 (2016)
JPCam Robbins M, et al, Performance of the e2v 1.2 GPix cryogenic camera for the J-PAS 2.5m survey telescope, Proc
SPIE 9908, 990811 (2016)
KMT B Atwood et al, Design of the KMTNet large format CCD Camera, Proc SPIE 8446 (2012)
Red sensitive CMOS K Stefanov et al, Fully Depleted Pinned Photodiode CMOS Image Sensor with Reverse Substrate
Bias, IEEE EDL (2017)
With acknowledgements to co-authors: Denis Bourke, Ryan Cassidy, Martin Fryer, Paul Jerram, Stuart Moore, Jérôme
Pratlong
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Summary
Teledyne e2v has developed a range of specialised sensors for adaptive optics applications
• Designed with high frame rate, high spectral response, and low noise
• Large format for ELT use; smaller formats also available; CCD and CMOS technologies
• Low latency and good uniformity for different sub-aperture sizes
• High sensitivity for natural and laser guide star use
• Custom packages and Peltier cooling supplied
We are currently developing the next generation of large-format high frame-rate sensor for ELT use
• This “LVSM” CMOS sensor has a 2-year development timeframe.
Teledyne e2v also designs and manufactures other custom CCD and CMOS sensors for astronomical use
Teledyne e2v designs and supplies sub-systems and systems for ground-based and space use
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