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Compared to BJTs, MOSFETs can be made very small as they occupy very small
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Moreover digital and memory ICs can be implemented with circuits that use
MOSFET has three regions of operation: the cut-off region, the triode region,
The cut-off region and the triode region are used to operate as switch. The
The value of voltage between Gate and Source i.e. VGS at which a sufficient
conducting channel is called threshold voltage (Vt is positive for NMOS and
increase VDS current starts flowing from Drain to Source (triode region). When
we further increase VDS, till the voltage between gate and channel at the drain
end to become Vt, i.e. VGS – VDS = Vt, the channel depth at Drain end
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decreases almost to zero, and the channel is said to be pinched off. This is
Cut-off region: When VGS < Vt, no channel is induced and the MOSFET will be
Triode region: When VGS ≥ Vt, a channel will be induced and current starts
flowing if VDS > 0. MOSFET will be in triode region as long as VDS < VGS – Vt.
Saturation region: When VGS ≥ Vt, and VDS ≥ VGS – Vt, the channel will be in
saturation mode, where the current value saturates. There will be little or no
In practice, when VDS is further increased beyond saturation point, it does has
some effect on the characteristics of the MOSFET. When VDS is increased the
channel pinch-off point starts moving away from the Drain and towards the
Source. Due to which the effective channel length decreases, and this
When a positive voltage is applied across Gate, it causes the free holes (positive
charge) to be repelled from the region of substrate under the Gate (the channel
region). When these holes are pushed down the substrate they leave behind a
carrier-depletion region.
maintain cut-off condition for all MOSFETs the body substrate is connected to
the most negative power supply (in case of PMOS most positive power supply).
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Which causes a reverse bias voltage between source and body that effects the
region will result in the reduction of channel depth. To restore the channel
depth to its normal depth the VGS has to be increased. This is effectively seen
as change in the threshold voltage – Vt. This effect, which is caused by applying
electrons and holes. BJT is a current controlled device and MOSFET is a voltage
controlled device.
If you consider the transistor level of a module, active low means the capacitor
in the output terminal gets charged or discharged based on low to high and high
to low transition, respectively. when it goes from high to low it depends on the
pull down resistor that pulls it down and it is relatively easy for the output
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signal?
Click here to learn more about synchronous reset and asynchronous reset.
reset is gated with the logic generating the d-input. But in such a case, the
combinational logic gate count grows, so the overall gate count savings may not
be that significant. The clock works as a filter for small reset glitches; however,
if these glitches occur near the active clock edge, the Flip-flop could go
Problem with synchronous resets is that the synthesis tool cannot easily
distinguish the reset signal from any other data signal. Synchronous resets may
need a pulse stretcher to guarantee a reset pulse width wide enough to ensure
reset is present during an active edge of the clock, if you have a gated clock to
save power, the clock may be disabled coincident with the assertion of reset.
Only an asynchronous reset will work in this situation, as the reset might be
removed prior to the resumption of the clock. Designs that are pushing the limit
for data path timing, can not afford to have added gates and additional net
delays in the data path due to logic inserted to handle synchronous resets.
Asynchronous reset: The major problem with asynchronous resets is the reset
release, also called reset removal. Using an asynchronous reset, the designer is
guaranteed not to have the reset added to the data path. Another advantage
favoring asynchronous resets is that the circuit can be reset with or without a
clock present. Ensure that the release of the reset can occur within one clock
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period else if the release of the reset occurred on or near a clock edge then
14. Why is the number of gate inputs to CMOS gates (e.g. NAND or
To limit the height of the stack. The higher the stack the slower the gate will be.
In NAND and NOR gates the number of gates present in the stack is usually
same as the number of inputs plus one. So inputs are limited to four.
R = (p.l)/A
Where
DESIGN.
+ Short-circuit current, this occurs when p-tree and n-tree shorted (for a while)
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Low power increases noise immunity, increases batter life, decreases cooling
reduction.
Pswitching = (1/2)CVdd2f
Where
C = Load capacitance.
f = Operating frequency.
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To read/write a word data, activates a word line for a row which causes all the
columns in the row to be active even though we need only a word data. This
Cache is a very important part of the integrated chips, they occupy most of the
space and hence contain lot of transistors. More transistors means more
leakage current. That is the major problem associated with caches w.r.t. low
power design. The following techniques are used to overcome it: Vdd-Gating,
Yes, one can redesign a software to reduce power consumptions. For example
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