Professional Documents
Culture Documents
Solutions?
Terry Welsher
Dangelmayer Associates
ESD Association
Industry Council on ESD
Targets
www.dangelmayer.com
350
Number units failed in period (typical)
300
250
200
150
100
50
0
NTF EOS FAB Asmbly Test Device
ESD
*Typical Failure Pareto Analysis – Several Sources
Copyright 2010, Dangelmayer Assoc. & Semitracks Inc. 3
EOS: Important Failure Category*
350
Number units failed in period (typical)
300
250
200
We will revisit this chart later!
150
100
50
0
NTF EOS FAB Asmbly Test Device
ESD
*Typical Failure Pareto Analysis – Several Sources
Copyright 2010, Dangelmayer Assoc. & Semitracks Inc. 4
Costs of EOS/ESD
0A < 125
3B ≥ 8000 p7
ESDA Technology Roadmap
4kV
De facto
Spec
New Spec
2kV
1kV
ESD Control Methods
0V
1975 1980 1985 1990 1995 2000 2005 2010 2015
p8
ESDA Technology Roadmap
Original
Specs
250V
125V
ESD Control Methods
0V
1975 1980 1985 1990 1995 2000 2005 2010 2015
p9
Do Device ESD Classifications Apply at the
Board Level? Yes and No
Page 14
Safe Operating Area (SOA)
ESD Area EOS Area
SOA
Current limit
Power limit
I P
Voltage
limit
V Time to failure
Over voltage tends to damage breakdown sites.
Over current tends to fuse interconnects.
causing
Over
Over power localized
voltagetends
tends failures.
totomelt largerbreakdown
damage areas. sites.
EOS:
Over Wide spreading to of heat resulting in large areas of damage.
age current
tends totends
damage fuse interconnects.
breakdown sites.
ESD:
Over Heat does not disperse much causing localized failures.
Overpower
currenttends
tendsto to
melt larger
fuse areas.
interconnects.
EOS:
OverWide
power spreading of heat
tends to melt resulting
larger areas.in large areas of damage.
ESD: 15
EOS:Heat
Widedoes not disperse
spreading of heatmuch causing
resulting
Slide 15
localized
in large areasfailures.
of damage.
Example Safe Operating Area (SOA)
Page 18
Electrical Overstress (EOS)
(Simple Working Definitions)
ESD
overstress from excessive I, V, P
Weak or defective device
Other?
We will revisit the EOS definition later
Page 19
More About EOS
Page 20
How do we categorize EOS?
By Stress Type?
By Failure Signature and Physical Damage?
By Root Cause?
By Failure Mechanism?
By Pulse Waveform Characteristics?
Thermal Failure Models (Wunsch-Bell-Tasca)
ESDA EOS WG
2012 International ESD Workshop Page 23
Misalignment
Assembly Others
System Testing
Design
Mis- Spec
CDM HBM insertion violations
Conductive Surface
Capacitance of
Device Device Contact Resistance
Q Charge
“Flow”
Ground
Copyright 2010, Dangelmayer Assoc. & Semitracks Inc. p26
CBE Background
28
Charged Rollers in Conveyors
Events and
charging
detected as
boards on and
between
conveyors
Higher
Operating
Speeds
p31
Copyright © 2012 Dangelmayer Associates Ref: Industry Council WPII 2009
CDM Threshold Dependencies
Larger Device Package Size
CBE
Higher
Operating
Speeds
p32
Copyright © 2012 Dangelmayer Associates Ref: Industry Council WPII 2009
Charged Board Event (CBE) — Overview
8
GND
GND pin CDM
FICDM
6
4 Device failure current
2
0
-2
0.00
0.25
0.50
0.75
1.00
1.25
1.50
Time (nanoseconds)
Courtesy:
*In both cases
AndrewtheOlney,
groundQuality
probe contacts
Director,the
Analog
same Devices
device pin directy
Cable Discharge Event (CDE)
38
EOS: Important Failure Category*
350
Number units failed in period (typical)
300
~10% to 50% - CDE/CBE?
250
200
150
100
50
0
NTF EOS FAB Asmbly Test Device
ESD
*Typical Failure Pareto Analysis – Several Sources
Copyright 2010, Dangelmayer Assoc. & Semitracks Inc. 39
ESD & EOS Failures Likely to Worsen
Without Advanced Mitigation
ESD
EOS
AC continuous
DC continuous
Conducted transients
Induced transients
Fast transients
44
Sources of EOS in Manufacturing and Test
47
Production Sources
Soldering Irons
Bad Grounding (Loss of Ground, Noise on Ground)
Noise on Power Line
Switching spikes
Tip oxidation
Power Tools
Power Supply
Commutation
48
ESD Association STM13.1-2000
Electrical Soldering/Desoldering Hand Tools
Tests:
• Resistance
• Voltage
• Current
49
Soldering Iron Tip Voltage Measurement
ESDA STM13.1-2000 Procedures
1. Connect negative meter lead to GRP.
2. Plug in UUT - Obtain operating
temp.
GFI OUTLET Unit Under 3. Set meter to AC mv range.
(AC Power) Test (UUT)
Insert Plug 4. Clean Tip
AC Hot Note: run various functions if present
(Hot Test) & allow to stabilize.
AC Neu.
5. Record AC Measurement
U-Prong. 6. Repeat for mv DC if desired.
Ground 7. Values shall be < 20 mv AC. (DC if
EGC - Green Wire Reference
(to Ground) DC is measured.
Point
AC Hot Solder
Unit Under Iron
AC Neu. Test (UUT) Tip
GFI
Power Contact
Outlet RG< 2.0 Point Meter
Lead or Test
RE Common Point Electrode
Gnd. or AC (optional)
Milli-Voltmeter Test Outlet Gnd.
Electrode (EGC) RM
(+) (10M)
10-20 mV Copyright 2010 -
mV
+ Readable to 1mV AC Semitracks,
Inc./Dangelmayer RM = Res. of Meter
- Associates RG = Res. of Iron Gnd. Wire
RE = Res. of EGC Wire
Faulty Power Receptacles
51
Faulty Power Receptacles (cont’d)
52
EMI Detection Exposes Faulty Grounding
No Events Detected!
Bonding Tip Properly
Grounded!
Events Detected!
Bonding Tip Not Grounded!
Video:
Bonding
EMI 53
Corrective Action — Improved Grounding
Unwanted
Voltage
Ground
Impedance
Source
55
DC-Caused EOS
Device
Source Handling
Equip.
Power Cord
Power Cord
Conducted
Conducted Conducted
EFT
EFT EFT
Power
Supply
Failure Analysis
Root Cause Analysis
Corrective Action
Feedback to Design and Manufacturing
Engineering
Training