MORTEZA FATHIPOUR

Professor
University of Tehran
Faculty of Engineering
Department of Electrical & Computer Eng.
North Kargar Ave.Tehran, Iran
Phone: (+9821) 61114329, (+980912 147 3209
Fax: (+9821) 88692457
P.O.Box: 14395-515 Tehran Iran
E mail: mfathi@ut.ac.ir
Green card holder
Date: Aug 2017
 Ph.D.: Electrical Engineering, Colorado State University, Ft. Collins,Colorado, U.S.A
Education  M.Sc.: Electrical Engineering, Colorado State University, Ft. Collins,Colorado, U.S.A

 Design, Fabrication and Characterization of Micro/nano electronic , MEMS , NEMS and

Research MOEMS Devices
Interests  Biosensors & BioMEMS
 Integrated Optical Gyroscope
 Physics and Technology of Nano structured 2D materials and Devices

Undergraduate  Physical Electronics (under graduate device electronics)

Courses  Modern Physics
Taught  Microelctronic circuits(I)

 Theory and Technology of Semiconductor Device Fabrication

Graduate  Operation and Modeling of the MOS Transistor
 Physics of Semiconductor Devices
Courses  Micro/Nano Electro Mechanical Systems (MEMS and NEMS)
Taught  BioMEMS

 Characterization of Semiconductor Devices: Electron Spectroscopy for Chemical Analysis

(ESCA), Auger Electron Spectroscopy (AES) ,Secondary Ion Mass Spectroscopy (SIMS), Ultra
Skills and Violet Photon Spectroscopy (UPS), Capacitance-Voltage (C-V), Current-Voltage (I-V)
Areas of measurement.
Specialization  Silicon Processing: Crystal growth, Oxidation, Diffusion, Ion Implantation, Chemical Vapor
Deposition, Epitaxial growth, Dry/wet etching, Plasma processing, Photo-chemical processing.
 Process Integration, Device Design, Mask Design
 Process Design, CAD Tools (process/device) for Integrated Circuits.
 Modified Chemical Vapor Deposition (MOCVD) Optical Fiber Production.

 Consultant to electronics industreis:

Served as consultant for setting up a factory, designed process for fabrication of
Discrete /MOSFET & Bipolar small signal and power transistors, photo detectors and
Solar cells.
 Deputy of Education in Electrical and Computer Engineering Department, Faculty of Eng.,
University of Tehran, Tehran, Iran
Experience  Electronics Group head, Electrical and Computer Eng. Department.
Faculty of Eng. University of Tehran.
 TCAD Laboratory: founder and head, Electrical and Computer Eng. Department, Faculty of
Eng., University of Tehran(http://tcad@ut.ac.ir)
 MEMS & NEMS Lab:founder and head, Electrical and Computer Eng. Department
F Faculty of Eng. University of Tehran (http://MEMS-NEMS@ut.ac.ir)
 Member of Board of Trustees Pars Electric Higher Education.
 Process and Device Design for Small Signal/power bipolar/MOS and HEMT structures.
Industrial  Design and Fabrication of Single Mode and Multi Mode Optical Fibers
Projects  Electron Beam Lithography Based on Scanning Electron Microscope for Sub micron Circuit
Fabrication,
 Feasibility studies for setting up fabrication facilities for MOS circuits and MMICs
Patent
 Power Transistor Using Super Junctions made of Lateral p and n Stripes IR Patent #
29848. Dated June 14, 2004.

Publications

Books Translated into Persian by M. Fathipour:

1. Plummer, Deal, Griffin, “Silicon VLSI Technology” Sharif University publication es
2. Yannis P. Tsividis “Operation and Modeling of the MOS Transistor”, Tehran
University Publication, 2008, Second Edition with revisions.
3. Jaspirit Singh “An Introduction to Semiconductor Devices”, Tehran University Press,
Other Books
4. “Electronic Circuit Simulation with Star HSpice”, Salekan Publishing 003,
Translated and Compiled by M. Fathipour and M. Gholipour.
5. M. Fathipour “Laser Enhanced Chemical Vapor Deposited SiO 2 InP Interface” Ph.D.
dissertation Colorado State University. 1984.

Book Chapter

1. A. Farrokh Payam, Eihab M Abdel Rahman, M. Fathipour, “Modeling and Control

of Atomic Force Microscope based on the Fuzzy, Fuzzy Controllers, Theory and
Applications, Intech Publisher” ISBN 978-953-307-543-3, Chapter 11, pp207-224,
2011.
2. A. Farrokh Payam, M. J. Yazdanpanah, M. Fathipour, A Robust Motion Tracking
Control of Piezo-Positioning Mechanism with Hysteresis Estimation, Nonlinear
Control, Intech Publisher, ISBN 979-953-307-600-2

Journal Papers

1. “Identification of Mechanical Properties of Cells and Subcellular Components

Using Dielectrophoresis”
2. S. S. Taheri Otaghsara and M. Fathipour, “ A Novel Microchip Capillary
Electrophoresis with Low Seperation Time and High Efficiency “, Elsevier, 2018.
Submitted.
3. M. Kateb M.R. Kolahdouz and M. Fathipour, “ Modulation of heterogeneous
surface charge and flow pattern in electrically gated converging-diverging
nanochannel”, International Communications in Heat and Mass Transfer J, Vol 91,
Page 103-108, Doi: 10.1016/j.icheatmasstransfer.2017.12.005, Feb 2017.
4. M. Fathollahzade, M. Hosseiny, M. Norouzi, A. Ebrahimi, M. Fathipour, M.R.
Kolahdouz and B. Haghighi, “ Immobilization of Glucose on ZnO Nanorods
Decorated Eletrolyte-Gated- Field Effect Transistor for Glucose Detection”, J of
Solid State Electrochemistry, Vol 22, Issue 1, pp 61-67, Doi: 10.1007/s10008-017-
3716-y, August 2017.
5. M. Nayeri and M. Fathipour, “A Numerical Analysis of Electronic and Optical
Properties of the Zigzag MoS2 Nanoribbon Under Unixial Strain”, published by
IEEE Transaction on Electron Devices, Doi: 10.1109/TED.2018.2810604, March
2018.
6. Alizadehzeinabad. H, Ghourchian. H, Falahati. M, Fathipour. M, Azizi.M,
Boutorabi. SM, “Ultrasensetive integrated capacitance immunosensor using gold
nanoparticles”, Published by Nanotechnology, Doi: 10.1088/1361-6528/aabca3,
2018.
7. M. Hayati, M. Fathipour and H. Sherafat Vaziri, “Design and Analysisi of Hairpin
Piezoresistive Pressure Sensor with Improved Linearity Using Square and Circular
 Diaphragms”, published by IET Digital Library, Doi: 10.1049/mnl.2018.0149.
2018.
8. F. Safari, M. Fathipour and A. Yazdanpanah Goharrizi, “Tuning electronic,
magnetic, and transport properties of blue phosphorene by substitutional doping: a
first-principles study”J of Computational Electronics, Doi: 10.1007/s10825-018-
1159-z, April 2018.
9. M Nayeri, M. Moradinasab and M. Fathipour, “The transport and
optical sensing properties of MoS2, MoSe2, WS2 and WSe2 semiconducting
transition metal dichalcogendies”, Semiconductor Science and Technology,
Doi:org/10.1088/1361-6641/aaa168, Jan 2018.
10. L. Meharvar, H. Hajhosseini, H. Mahmoodi, S. Hassan. Tavssoli, Morteza.
Fathipour and S. M. Mohseni, “Fine-tune plasma nano-machining technique for
fabrication of 3D hollow nanostructures: SERS applications” Nano Research J,
doi: 10.1088/1361-6528/aa78e9. 2017.
11. M. Kateb S. Safarian, M. Kolahdouz and M. Fathipour, “Field effect modulation of
heterogeneous surface charge and flow pattern in successive converging-diverging
nanochannel”, Analytical Chemistry J, 2017.
12. B. Haghigi, M. Fathollahzadeh, M. Hosseini, M. Norouzi, A. Ebrahimi, M.
Fathipour and M. R. Kolahdouz, “ZnO Based Field Effect Transistor for Glucose
Detection”, Electrochemical Society J, 2017, submitted for publication.
13. B. A. Ganji, S. Taheri and M. Fathipour, “ANovel Microchip Capillary
Electrophorosis with Low Seperation Time and High Efficiency” ACS J, 2017.
Accepted.
14. M. Rahimian and M. Fathipour, “Induced Source-side Tunneling in Junctionless
Nanowire TFET with a Minima in Conduction Band”, Elsevier. 2016. Submitted
for publication.
15. M. Rahimian, M. Fathipour, "Two Dimensional Analytical Modeling and
Simulation for Junctionless Nanowire Tunneling Field Effect Transistors" Journal
of Applied Physics. 2016.
16. L. Mehrvar, M. Sadeghipari, S. H. Tavassoli, S. Mohajerzadeh and M.Fathipour,
“Optical and Surface Enhanced Raman Scattering properties of Ag modified silico
double nanocone array” SCINETIFIC REPORTS J, doi: 10.1038-017-12423-2,
Sep 2017.
17. Mohammad Javad Mohammad-Zamani, Morteza Fathipour, Mohammad Neshat,
Fakhroddin Nazari, and Mahdi Ghaemi “Bias-free and Antenna-Coupled CW
Terahertz Array Emitter with Anomalous Schottky Barriers” , Optical Society B J,
doi: 10.1364/JOSAB.34.001771, Aug 2017.
18. S. Bidmeshkipour, M. Fathipour, Y. Abdi and S. J. Ashtiani, “Microwave
Characterization of Grapheme field effect transistors on Lithium Neonate
Ferroelectric Substrates”, Materials Research Express J, 2017. DOI:
10.1088/2053-1591/aa65af.
19. Y. Movassaghi, V. Fathipour, M. Fathipour and H. Mohseni, “Analytical and
numerical evaluation of electron-injection detector optimized for SWIR photon
detection”, Journal of Applied Physics, 2017 DOI:10.1063/1.4976012.
20. M. Rahimian, M. Fathipour, “Improvement of Electrical Performance in
Junctionless Nanowire TFET Using Hetero-Gate-Dielectric” Materials Science in
Semiconductor Processing”, 2017. Doi.org/1016/j.mssp.2016.12.011.
21. M. M Allameh and M. Fathipour, “The Impact of the BAW Gyroscopes Proof
mass Perforation Shape on the Matching Frequency of its Drive and Sense
Modes”, , Vol2, No 2 winter 2016.Nanotechnology J, doi: 10.1088/1361-
6228/aa78e9, 2017.
22. M. Nayeri, M. Fathipour and A. Yazanpanah, “The effect of uniaxial strain on the
optical properties of monolayer molybdenum disulfide” J. phys D. 2016,
DOI:10.1088/0022-3727/49/45/455103.
23. M. Fathollahzadeh, M. Hosseini, B. Haghighi, M. Kolahdouz and M. Fathipour, “
Fabrication of a liquid-gated enzyme field effect device for sensitive glucose
detection”, Analytica Chimica Acta J, 2016, Doi: 10.1016/j.aca.2016.04.018.
24. M. Rahimian M. Fathipour, “Asymmetric Junctionless Nanowire TFET with Built
-IN N+ Source Pocket Emphasizing on Energy Band Modification” J. Comput
Electron, 2016. DOI: 10.1007/s10825-016-0895-1.
25. M. Rahimian M. Fathipour, “ Juncthionless nanowire TFET with built-in N-P-N
bipolar action: Physics and operational principle”, J Appl. Phys, doi:
10.1063/1.4971345J, 2016.
26. M. Nayeri, M. Fathipour and A. Yazanpanah, “Behavior of the Dielectric Function
of Monolayer MoS2 under Uniaxial Strain”, J. Comput. Electron. 2016. DOI:
10.1007/s10825-016-0889-z.
27. B. Haddadi and M. Fathipour, “Numerical Analysis of 3D Model of the SSAW
Separator System”, International Journal of Computer Applications, Foundation of
Computer Science (FCS), NY, U.S.A, 2016.DOI: 10.5120/ijca2016909914.
28. M. Mahmoudi, Z. Ahangari and M. Fathipour, “Improved double-gate armchair
silicene nanoribbon field-effect-transistor at large transport bandgap”, Chin. Phys.
B. 2016 DOI: 10.1088/1674-1056/25/1/018501.
29. Y. Movassaghi, V. Fathipour, M. Fathipour and H. Mohseni, “Analytical modeling
and numerical simulation of the short-wave infrared electron-injection detectors”,
Applied Physics Letters, 2016. DOI: 10.1063/1.4944602.
30. M. Jozi, A. A. Orouji and M. Fathipour, “control of electric field 4h-SiC
UMOSFET” Physical E. vol. 83, 2016, DOI: 10.1016/j.physe.2016.04.010.
31. M. Kateb, M. Fathipour, M.R Kolahdouz and V. Ahmadi, “ZnO- PEDOT core-
shell nanowires: An ultrafast high contrast and transparent electrochromic
display”, J. Solar Energy Materials and Solar Cells. 2015. Doi:
10.1016/j.solmat.2015.10.014
32. D, Adinehloo and M. Fathipour, “Magneto-Induced Tuenability of Thermo-Spin
Current in Deformed Zigzag Grapheme Nanoribbons”, J. Applied Physics, 2015.
Doi: 10.1063/1.4937561
33. A. A. Orouji, M. Jozi and M. Fathipour, “ High voltage and low specific on-
resistance power UMOSFET using P and N type columns” materials science in
semiconductor processing, 2015. Doi: 10.1016/j.mssp.2015.06.006.
34. A. Farrokh Payam and M. Fathipour, “Effect of Tip Mass on Flexural Sensivity of
Rectangular AFM Cantilever to Surface Stiffness Variations”, Arab J. of Sci
Engineering. 2014. DOI: 10.1007/s13369-013-0682-2.
35. M. Asad, M. Fathipour, M.H. Sheikhi and M. Pourfath, “High-Performance
Infrared Photo-Transistor Based on SWCNT Decoratted with PbS Nanoparticles,
Sensors and Actuators A: Physical, 2014 Doi: 10.1016/j.sna.2014.10.017.
36. M. J. Mohammadzamani, M. Fathipour, “An Investigation of Highly Scaled III-
Nitride Gallium-Face and Nitrogen-Face HEMTs”, Superlatices and
Microstructures Corresponding.2014.DOI: 10.1016/j.spmi.2014.11.023.
37. M. Moradinasab, M. Pourfath, M. Fathipour and H. Kosina, “Numerical Study of
Graphene Superlattice Based Photodetectors”, IEEE Transaction on Electron
Devices 2014. Doi:10.1109/TED.2014.2383354.
38. M. S. Feali and M. Fathipour, “Multi-Objective Optimization Of Mirofludic Fuel
Cell”, Russian J, 2014, Vol 50, No 6.
39. N. Khairabadi, A. Shafiekhani and M. Fathipour, “Review on Graphene
Spintronic, New Land for Discovery” Elsevier, 10.1016/j.spmi.2014.06.020, 2014.
DOI: 10.1016/j.spmi.2014.06.020.
40. M. Asad and M. Fathipour, “Fast Photodetectrons Based on Single wall Carbon
Nanotubes Decorated with Lead Sulfide Nanoparticles”, 2014. doi:
10.1016/j.sna.2014.10.017.
41. M. Vadizadeh, M. Fathipour and G. Darvish, “Silicon on raised insulator field
effect diode (SORIFED) for alleviating scaling problem in FED”, Feb. 2014. DOI:
10.1142/s0217979214500386.
42. Z. Ahangari and M. Fathipour, “Band structure effect on the electron current
oscillation in ultra-scaled GaSb schottky MOSFET: tight-binding approach”,
journal of computational electronics, 2014.doi:10.1007/s10825-013-0544-x
43. M. S. Faeli and M. Fathipour, “An Air-Breathing Microfluidic Fuel Cell with a
Finny Anode”, Russian Journal of Electrocheistry, 2013. DOI:
10.1134/S102319351309005X.
44. Z. Ahangari and M. Fathipour, “Tight-binding analysis of current oscillation in
nanoscale In0.53Ga0.47As Schottky MOSFET”, J. of Applied Phys., 2013. DOI:
10.1088/0022-3727/46/44/45101
45. Z. Ahangari and M. Fathipour, “Performance Assesment of Nanoscale Schottky
MOSFET as Resonant Tunnelling device: Non-equilibrium Green’s function
formalism”, PRAMANA journal of physics, p 1-10, 2013. DOI: 10.1007/s12043-
013-0586-4.
46. Z. Ahangari and M. Fathipour, “Tight-Binding Study of Quantum Transport in
Nanoscale GaAs Schottky MOSFET”, Chineese Physics B, Vol 22, No9, 2013.
47. M. Tavakoli, H. Hajghasem, M. Dousti and M. Fathipour, “Design and
Implementation of High Data Capacity RFID Tag Using eight-Phase Encoding”,
Int J of Electronics, 2013, DOI: 10.1080/00207217.2013.769190.
48. R. Hosseini N. Teimourzadeh and M. Fathipour, “A New Source Heterojunction
Strained Channel Structure for Ballistic all Around Nanowire Transistor”, J. of
Computational Electronics, 2013, DOI: 10.1007/s10825-013-0496-1.
49. M. Tabatabaei, , M. Noei K. Khaliji, M. Pourfath, and M. Fathipour, “A First-
Principles Syudy on the Effect of Biaxial Strain on the Ultimate Performance of
Monolayer MoS2-Based Double Gate Field Effect Transistor”, Journal of Applied
Physics,113,163708,p16708-116708-6,2013.DOI: 10.1063/1.4803032
50. M. Noei, K. Khaliji and M. Fathipour, “On the Robustness of Magnetism in
Zigzag Graphene Nanoribbons”, Modern Physics Letters B, V 27, Issue 15, 2013.
DOI: 10.1142/S021798491350111X
51. K. Khaliji, M. Noei, S. M. Tabatabei, M. Pourfath and M. Fathipour, “Tunable
Bandgap in Bilayer Armchair Graphene Nanoribbons: Concurrent Influence of
Electric Field and Uniaxial Strain”, IEEE Transactions on Electron Devices, vol. 60, No
8, p 2464-2470, 2013. DOI: 10.1109/TED.2013.2266300
52. A. Farrokh Payam and M. Fathipour, “Study of the tip mass and interaction force
effects on the frequency response and mode shapes of the AFM cantilever”, V 65,
Issue 5-8, p 957-966, 2013. DOI: 10.1007/s00170-012-4231-z.
53. A. Farrokh Payam and M. Fathipour, “Sensitvity of Flexural Vibration Mode of the
Rectangular AFM Micro Cantilevers in Liquid to the Surface Stiffness Variations”,
Ultramicroscopy, doi: 10.1016/j-ultramic.2013.07.006, 2013.
54. M. A. Malakoutian and M. Fathipour, “Investigation of the Carrier Concentration
and Laser Peak Intensity on the Terahertz Pulse Generated by Photoconductive
Antennas”, Majlesi Journal of Telecommunication Devices ‫ و‬V. 1, No 1 2012.
55. Z. Ahangari and M. Fathipour,”Impact of Silicon Wafer Orientation on the
Performance of Metal Source/Drain MOSFET in Nanoscal Regime: a Numerical
Study” J of NANOSTRUCTURES, 2012. DOI: 10.7508/jns.2012.04.010
56. M. Pournia and M. Fathipour, “A Programmable Surface Acoustic Wave RFID” Int
J of Innovative Technology and Exploring Engineering (IGITEE), ISSN: 2278-
3075, Vol. 2, Issue 6, 2012.
57. M. Noei, K. Khaliji and M. Fathipour, “Magnetism in Zigzag Graphene
Nanoribbons with Single Atom Vacancies” Solid State Science 2012. DOI:
10.1142/s021798491350111x.
58. M. Gahsemian Shirvan and M. Fathipour, “A Compact Model for the Ion
Implanted Channel LDMOS Transistor”, Solid State Sciences. Vol. 14, Issue 4, PP
471-475, 2012. DOI.org/10.1016/j.solidstatescience.2012.01.008.
59. R. Hassanshahi, M. Fathipour and M. S. Faeli, “A New Structure for Improved
Fuel Utilization and Performance of Microfluidic Fuel Cell”, Internatioanal
 Journal of Advanced Renewable Enerngy Research Vol. 1, Issue 11, pp. 605-610,
2012.
60. R. Hassanshahi and M. Fathipour, “Design o a New Microfluidic Fuel Cell for
Enhanced Current Density and Performance”, Internatioanal Journal of Advanced
Renewable Enerngy Research Vol 1, Issue 11, PP 649-654, 2012.
61. A. Farrokh Payam and M. Fathipour, “Capillary Force Models for Interactions of
Several Tip/Substrate in AFM Based on the Energy Method”, J. Surface Sci. and
Technol, Vol. 28, No. 1-2 pp. 71-90, 2012. https://doi.org/10.18311/jsst/2012/1904
62. A. Farrokh Payam, M. Jalalifar and M. Fathipour, “Modeling and Analysis of
Capillary Force Interaction for Common AFM Tip Shapes”, World Applied
Sciences Journal. Vol. 16, No. 12, pp. 1803-1814, 2012.
63. A. Farrokh Payam and M. Fathipour, “Study of the Tip Mass and Interaction Force
Effects on the Frequancy Response and Mode Shapes of the AFM Cantilever”,
International Journal of Advanced Manufacturing Technology 2012, (springer).
DOI:10.1007/s00170-012-4231-z
64. M. Noei, M. Fathipour and M. Moradinasab, “A Computational Study on the
Electronic Properties of Armchair Graphene Nanoribbons Confined by Boron
Nitride”, Journal of Applied Physics, 2012. DOI: 10.1143/JJAP.51.035101.
65. S. R. Hosseini and M. Fathipour and R. Faez, “A Comparative Study of NEGF and
DDMS Models in the GAA Silicon Nanowire Transistor”, International Journal of
Electronics, Vol 99, No. 9, P. 1299-1307, 2012.
66. R. Hosseni, M. Fathipour and R. Faez, “Performance Evaluation of Source
Hetrojunction Strained Channel Gate All Around Nanowire Transistor”, World
Scientific Modern Physics Letter B, Vol. 26, No 12, P 1250076-1, 1250076-13.
2012.
67. R. Hosseni, M. Fathipour and R. Faez, “Quantum Simulation Study of Gate-All-
Around (GAA) Silicon Nanowire Transistior and Double Gate Metal Oxide
Semiconductor Field Effect Transistor (DG MOSFET)”, international J. of the
Physical Sciences V, 7(28) pp. 5054-5061, 2012.
68. H. Nematian, M. Moradinasab, M. Pourfath, M. Fathipour and H. Kosina, “Optical
Properties of Armchair Graphene Nanoribbons Embedded in Boron Nitride
Hexagonal Lattices”, J. of Applied Physics. Vol. 111, Issue 9, P 1-6, 2012. DOI:
10.1063/1.4710988

69. Farrokh Payam and M. Fathipour, “Effect of Tip Mass on Modal Flexural
Sensitivity of Rectangular AFM Cantilevers to Surface Stiffness Variation”
Imaging and Microscopy, 2011 DOI: 10.1007/s13369-013-6682-2
70. V. Fathipour, S. Fathipour, M. Fathipour and M. A. Malakotian, “Device
Simulation of a Novel Strained Silicon Channel RF LDMOS Microelectronic
Engineering”, Elsevier, vol 94, p. 29-32, 2012.
71. M. Noei, M. Moradinasab and M. Fathipour, “A Computational Study of Balistic
Graphene Nanoribbon Field Effect Transistors”, Physica E, Elsevier 2011. DOI:
10.1016/j.physe.2011.12.018.
72. A. Yazdanpanah, M. Pourfath, M. Fathipour, H. Kosina and S. Selberherr, “Device
Performance of Graphene Nanoribbon Field Effect Transistors in the Presence of
Line-Edge Roughness”, IEEE Transactions on Electron Devices. Vol. 59, Issue 12,
pp. 3527-3532, 2012.
73. A. Yazdanpanah, M. Pourfath, M. Fathipour, H. Kosina and S. Selberherr, “A
Numerical Study of Line-Edge Roughness Scattering in Graphene Nano-Ribbons”,
IEEE Transactions on Electron Devices, Vol. 59, No 2, P433-440. 2012.
74. F. Karimi, H. Ghanatian and M. Fathipour, “The Impact of Structural Parameters
on the Electrical Characteristics of Silicon NanoWire Transistor Based on NEGF
Corresponding”, Journal of Nanoscience and Nantechnology. J. of Nanoscience
and Nanotechnology Vol. 12, pp 1-5, 2012.
75. R. Hosseini, M. Fathipour and R. Faez, “Performance Evaluation of Source
Hetrojunction Strained Channel GAA Nanowire Transistor “, Modern Physics
Letter B, Vol 26, No 12, P 1250076-1, 1250076-13, 2012.
76. M. Moradinasab, H. Nematian, M. Pourfath, M. Fathipour and H. Kosina,
“Analytical Models of Appriximations for Wave Functions and Energy Dispersion
in Zigzag Graphene Nanoribbons”, J. of Applied Physics, No. 111, P 1-10, 2012.
77. M. A. Malakoutian and M. Fathipour, “Investigation of the Carrier Concentration
and Laser Peak Intensity on the Terahertz Pulse Generated by Photoconductive
Antennas Based On LT-GaAs” Majlesi J. of Telecommunication Devices, Vol. 1,
No 1, 2012.
78. R. Hosseini, M. Fathipour and R. Faez, “A Comparative Study of NEGF and
DDMS Models in the GAA Silicon Nanowire Transistor, Int. J. of Electronics, Vol
99, Issue9, 2012. DOI: 10.1080/00207217.2012.669709.
79. V. Fathipour, S. Fathipour, M. Fathipour and M. A. Malakootian, “Device
simulation of a novel strained silicon channel RF LDMOS”,J Microelectronic
Engineering,Vol. 94, pp 29-32, 2012. DOI:10.1016/j.mee.2011.12.014
80. M. Moradinasab and M. Fathipour, “A Compact Model for Current-Voltage in
Doped Carbon Nanotube Field Effect Transistors”, J. of Iranian Association of
Electrical and Electronics Engineers, Vol. 8, N0 2, 2011.
81. A. Yazdanpanah, M. Pourfath, M. Fathipour, H. Kosina and S. Selberher, “An
Analytical Model for Line-Edge Roughness Limited Mobility of Graphene
Nanoribbons” IEEE Transactions on Electron Devices, Vol 58, No11, 2011. DOI:
10.1109/TED.2011.2163719
82. A. Farrokh Payam, M. Fathipour, “A Capillary Force Model for Interaction
between Two Spheres” Particuology, Elsevier, Vol 9, pp 381-386, 2011.
83. F. Karimi, M. Fathipour and R. Hosseini, “A Quantum Mechanical Transport
Approac to Simulation of QG Silicon Nanowire Transistor,” Nanoscience and
Nanotechnology, Vol 11, No 11, P 10476-10479, 2011.
84. S. Azimi, M. Mehran, A. Amini, A. Vali, S. Mohajerzadeh and M. Fathipour
“Formation of Three-Dimensional and Nanowall Structures on Silicon Using a
Hydrogen-Assisted High Aspect Ratio Etching” Journal of Vac. Sci. and
Technology, Vol. 28, P 1125-1131, 2010.

85. M. Fathipour, M. H. Refan, M. Ebrahimi, “Design of a Resonant Suspended Gate

MOSFET with Retrograde Channel Doping”, Iranian Journal of Electrical &
Electronic Engineering, Vol.6, No.2, 2010.
86. A. Farrokh Payam, M. Fathipour, “Electric Double Layers Interactions under
Condition of Variable Dielectric Permitivity” Interactions and Multi scale in
Mechanics Journal, Vol3, No. 2, 2010, DOI: 10.12989/imm.2010.3.2.157
87. F. Arab Hassani, A. Farrokh Payam, and M. Fathipour, “Design of a Smart MEMS
Accelerometer Using Nonlinear Control Principles”, International Journal of Smart
Structures and Systems, Vol 6, No 1, p 1-17, 2010.
88. A. Farrokh Payam, M. Fathipour, “Modeling and Dynamic Analysis of Atomic
Force Microscope Based on Euler-Bernoulli Beam Theory” Digest Journal of
Nanomaterials and Biostructures, Vol 4, No 3, pp. 565-578, 2009.
89. A. Farrokh Payam, F. Arrabb Hassani and M. Fathipour, “Design of a Hybrid
Closed Loop Control Systems for a MEMS Accelerometer Using Nonlinear
Control Principles” International Review of Automatic Control (IREACO), Vol. 2,
No. 4, pp. 452-458, 2009.
90. A. Khorami, M. Fathipour, “ The Impact of the He-Xe Gas Mixture on the
Excitation Efficiency In Plasma Displays Panel and its Comparison with That of
Ne-Xe and Ne-Xe-Ar Mixtures”, Journal of Iranian Association of Electrical and
Electronics Engineers, Vol. 6, No. 1, pp.11-17, 2009.
91. K. Baghbani Parizi, N, Peyvast, B, Kheyraddini Mousavi, S. Mohajerzadeh and M.
Fathipour,” Schottkey Barrier NANO-MOSFET with an Asymmetrically Oxidized
 Source/Drain Structure” Journal of Solid State Electronics, Vol. 54, pp. 48-51,
2009.
92. A, Abdi, S, Mohajerzadeh and M. Fathipour, “High Sensitivity interdigited
Capacitive Sensors Using Branched treelike Carbon Nanotubes on Silicon
Membranes”l, Applied Physics Letter, Vol. 17, No 94, P 1-3, 2009.
93. A. A. Orouji, S. Sharbati, M.Fathipour, “A New Partial – SOLIDMOSFET with
Modified Electrical Field for Breakdown Voltage Improvement.” IEEE
Transactions on Device and Materials Reliability, Vol. 9, No 3, P 449-453, 2009.
94. A. Farrokh Payam, M. Fathipour, M. j. Yazdanpanah, “High Precision Imaging for
Non-Contact Mode Atomic Force Microscope Using an Adaptive Nonlinear and
Output State Feedback Controller” Digest Journal of Nanomaterials and
Biostructures, Vol. 4, No 3, p 429-442, 2009.
95. M. Fathipour, B. Abbaszadeh, “A Study of the Electrical Characteristics of
Nanoscale Si/Strained SiGe pMOSFET”. Int. J. Nanotechnol, Vol.6, No10/11, pp
882-891, 2009.
96. A. Orouji, S. Heydari, M. Fathipour, “ Double Step Buried Oxide (DSBO) SOI –
MOSFET: A Proposed Structure for Improving Self-Heating Effects”, Journal of
Physica E, Vol. 41, p 1665-1668, issue 2009.
97. M. Fathipour, A. A. Orouji, S. Sharbati. “Analysis and Simulation of Silicon
Carbide Diode Characteristics” Electrical Engineering journal, Vol 5, No 13, pp
13-18. 2006.
98. E.Fathi, A.Behnam, P.Hashemi, B.Esfandyarpour, M.Fathipour. "The Influence of
Stacked and Double Material Gate Structure on the Short Channel Effects in SOI
MOSFET" IEICE Transaction on Electronics. Vol.E88-C No.6. pp.1122, 2005.
99. R.Tarigat, A.Goodarzi, Sh Mohajerzadeh, B, Arvan, M.R.Gaderi, M.Fathipour.
"Realization of Flexible Plasma Display on PET Substrates". Proceedings of the
IEEE, Vol 93, No.7, pp.1, 2005.
100.A.Z. Moshfegh, R. Azimirad, M. Fathipour, M. Godarzi, A. Akhavan, “Growth and
characterization of sodium - tungsten oxide nanobelts with U - shape cross
section”. Crystal Growth, Elsevier, Vol. 310, No. 1, P824-828, 2007.

101.D.Shahrejerdi, M.Fathipour, B.Hekmatshoar and A.Khakifirooz, “A Lateral

Structure for Low-cost Fabrication of COOLMOS TM “Journal of Solid State
Electronics. Vol.48, pp.1953-1957, 2004.
102.M.Fathipour, E.Fathi, B.Afzal, A.Khakifirooz “An Improved Shift – and – Ratio
Leff Extraction method for MOS Transistors with Halo/Pocket Implants” Journal of
Solid State Electronics . Vol.48, PP.1829-1832, 2004.
103.M. Fathipour, A. Nicktash, C. Locus, “Recognition of the Irregular Patterns in the
Fabrication Process of Semiconductor Devices, Using Neural Networks”, Journal
of Faculty of Engineering University of Tehran, Vol.34, No.2, pp.11, Sept. 2000.
104.M. Fathipour, M.J Sharifi, “Extraction of model Parameter for Semiconductor
Devices”. Yavar, pp. 39 No .4. 1997
105.M. Fathipour, etal. “Photo Enhanced Thermal Oxidation of InP”, J. Appl. Physics,
57(2) pp. 637. 1985.
106. M. Fathipour, etal. “High Temperature Annealing of InP” Anodic Oxides”,
J. Vac. Sci. Technol. A, Vol. 1, No. 2, 1983, pp. 662-666
107. C.W. Wilmsem, J. Wager, Geib, T. Hwong and M. Fathipour “Traps at the
Insulator/InPInterface –A Discussion of a Possible Cause”, Thin Solid Films (103), 1983.
108. S.M.Goodnick, M. Fathipour, D. Elsworth, C.W. Wilmsen, “The Effect of a Thin
Oxide Layer on Metal Semiconductor Contacts”J. Vac. Sci. 18, 1980.

Conference Papers:
 1. S. S. Taheri Otaghsara, M. Fathipour and B. Azizollah Ganji, “The new structure of
microship capillary electrophorosis with gated injection and high velocity,
resolution and efficiency”, ICE 2017.
2. 3. S. S. Taheri Otaghsara, B. Azizollah Ganji, M. Fathipour and S. Amoutsar”,
Simulation of cross-form geometry and gated injection in electrophoresis
microchannels by comsol”, 4th national & 2th International Conference on Applied
Research in Electrical, Mechanical& Mechatronics Engineering, 2017.
3. S. S. Taheri Otaghsara, B. Azizollah Ganji and M. Fathipour “ The new structure of
micro-channel in electrophoresis with low separation time and high resoulution and
efficiency,” 25th ICEE 2017.
4. M. Alidoosty, H. Zare and M. Fathipour, “The Effect of Insulators Permittivity and
Scaling on the SOI Based MOS Optical Modulators” ICEE 2017, accepted.
5. S. Taheri, B. A. Ganji and M. Fathipour, “A new Microchannel Design for foot
Seperation, High Resoltion High Efficiency”, ICEE 2017, (accepted for
publication).
6. M. Bashirpour, S. Ghorbani, M. R. Kolahdouz, M. Neshat, H. Hajhosseini, M.
Mansouree and M. Fathipour, “Simulation and Fabrication of Photoconductive
Antenna onLTG-GaAs for Terahertz Radiation” doi:10.1364/ACPC.2016.AS2E.4
2016.
7. M. Bashirpour, J. Poursafar, M. R. Kolahdouz, M. Neshat, H. Hajhosseini and M.
Fathipour, “Terahertz photoconductive antenna on LT-GaAs power improvement by
use of nano-plasmonic structure”, EMRS 2016. Accepted.
8. M. Mousavi and M. Fathipour, “A contactless conductivity detector for detection of
biomolecules and chemical compounds,” microfluidics conference, Feb 2016.
9. M. Iranmanesh and M. Fathipour, “A micro channel network for mixing blood
plasma using a centrifugal microfluidic device”, Microfluidics Conference, Feb
2016.
10. R. Toutouni, A. A. Ebadi, S. Alirezaei and M. Fathipour, “A microfluidics active
valve based on direct electrosmosis”, Microfluidics Conference, Feb 2016.
11. S. Alirezaei, A. A. Ebadi, R. Toutouni and M. Fathipour, “Inners based separation
of blood from plasma in a microfluidic”, Microfluidics Conference, Feb 2016
12. Y. Movassaghi, V. Fathipour, M. Fathipour and H. Mohseni, “Analytical modeling
of shortwave-infrared electron-injection detectors”, SPIE. 2015.
13. D. Adinehloo and M. Fathipour, “Thermally-enhanced spin current in stained
ZGNRs”, ICN 2015, Aug 2015.
14. D. Adinehloo, and M. Fathipour, “Strain engineering of low-buckled two-
dimensional materials based on tight binding approach”, ICN 2015, Aug 2015.
15. Hajian and M. Fathipour, “A new method for measuring electron transport time
constant in Solar Cells” Submitted at the Eighth National Conference on
Clean Renewable and Efficient Energy, Iran, 2015.
16. M.Nayeri, M. Fathipour and A. Yzadanpanah, “Study of optical properties of
single-layer moly bdenum disulfide by tight binding method” ICOP 2016.
17. R. Hekmati, M. Neshat and M. Fathipour, “Investigation of high-and low-k Gate
dielectrics in tuning of grapheme-loaded THz antenna” ICEE 2015 23th Iranian
Con.
18. Z. Kord and M. Fathipour, “Dependence of Selfheating Effect on the Wall Angle in
AlGaN/GaN HEMT with V Shaped Gate”, IEEE 2014.
19. Y. Movassaghi, V. Fathipour, M. Fathipour and H. Mohseni, “Analytical Modeling
and Simulation of Electron Injection Detectors with High Internal Amplification and
Low Noise at Telecom Wavelength”.
20. F. P. Omidvar, J. Karamdel and M. Fathipour, “Optimization of MEMs Neural
Microelectrode Thickness based on Flexibility”,
21. Z. Ahangari and M. Fathipour, “Simulation of Quantum Transport in Double
Schottkey Gate MOSFETs”, ICEE 2014.
22. M. Fathipour, P. Vahdani. Mogadam, M. Masami and H. Ghasri, “Simulation of
Noise in InSb Infra Red Detectors”, ICEE 2014.
23. H. Chenarani and M. Fathipour, “A Novel Structure for En Cut off Frequency and
Output Power in GaAs MESFETs”, ICEE 2014.
24. M. J. Mohammadzamani and M. Fathipour, “AnInvestigation of Highly Scaled III-
Nitride Ga-Face and N-Face HEMTs.
25. H. Agharezaaei, A. A. Orouji and M. Fathipour, “Improvement Breakdown Voltage
of GaN Based HEMT by Optimizing P-Layer Doping in the Barrier Layer”, Iran
Physsics Con. 93.
26. M. Tabatabaei, A. A. Ebadi, M. Mahmoodian, M. Imani, M. Fathipour and P. Zahedi,
“Novel Applications of a Dental Composite in UV and Soft Lithography’, 11th Int
Seminar on Polymer Science and Technology, Oct 2014.
27. P. V. Moghadam, M. Fathipour and G. Abeaiani, “The influence of bulk donor and
acceptor traps on electrical behavior of p+n photodiode based on InSb|, 8th
Symposium on Advances in Science & Technology, 2014.
28. M. Danesh, S. N. Anoushe. M. A Malakoutian and M. Fathipour, “Vandium Doped
Silicon Carbide Simulation for High Voltage Operation”, ISDRS 2013.
29. S. M. Tabatabei, K. Khaliji, M. Fathipour, Y. Abdi and S. Fathipour, A computational
study on ballistic electronic transport in group-IV armchair nanoribbon based field
effect transistors”, ISDRS 2013.
30. M. Fathipour, M. Nikofard and S. Hossieni, “Drift diodes with step recovery”, 5th
Iranian Conference on Electrical and Electronics Engineering, 2014.
31. S. Sharifi, M. Yousefi, M. Fathipour and R. S. Nadoshan,” A comparison study
between nanostructured dye sensitized solarcells with TiO2 and ZnO photo anodes,
Second international conference on new methods in energy storage, 2014.
32. P. V. Moghadam, M. Fathipour and G. Abeani, “The influence of bulk donor and
acceptor traps on electrical behavior of p+n photodiode based on InSb”, 8th sym on
advances in science & technology, 2014.
33. A. A. Ebadi, M. Hajari, M. Mahmoodian, M. Imani, M. Fathipour and P. Zahedi, “A
Novel Photoresist composition based on Multifunctional Methacrylate Monomers
for UV Lithography” IPPI 2014.
34. M. Ghorbanzadeh, M. Fathipour and M. Asad, “Dominanat dark current in InSb base
infera red detector, ICEE 2013.
35. M. Jafai, M. Imani and M. Fathipour, “A Stable and Low Power Bandgap Design
Employing Lubistar Devices in FinFET Technology”, ICEE 2013.
36. M. Jafari, M. Imani and M. Fathipour, “Employing Different Modes of Power Gating
on ARM Processors by 16nm FinFET” ICEE 2013.
37. M. Jafari, M. Imani and M. Fathipour, “A llow power, variability resilient 9T-SRAM
cell operating stable in sub and near-threshold regions using 16nm CMOS
technology” IEEE 2013.

38. M. Kazemi and M. Fathipour, “Stepped Dual Gate (ESDG) LDMOS for Improved
High Voltage Performance”, 4th Power Electronics, Drive Systems and Technologies
Conference, 2013. (Submitted).
39. H. Nematian and M. Fathipour, “AComarative Study on Hydrogen-Passivated and
Boron Nitride-Confined Graphene Superlattice-Based Photodetectors”,
40. M. Tavakoli Bina, M. Kazemi and M. Fathipour, “Stepped Dual Gate (ESDG)
LDMOS for Improved High Voltage Performance”, IEEE 2013.
41. M. Nayeri, M. Fathipour and H. Nematian, “A Proposed Structure for Reducing Bias
Voltages in Nanoscale Impact Ionization MOS Devices”, 2013.
42. M. Jafari, M. Imani and M. Fathipour, “Bottom-up Design of a High Performance
Ultra-Low Power DFT utilizing Multiple-VDD, Multiple-Vth and Gate Sizing”, IEEE
2013.
43. M. Jafari, M. Imani and M. Fathipour, “Design of a switched capacitor sample &
hold circuit using a two stage OTA with 13 ENOB and 40 MS/s in CMOS 0.18µ.
ICEE 2013.
44. S. Sharifi, M. Yousefi, M. Ftahipour and R. Sabaghi. Nadoushan”, Ihe impact of
temperature on the operation of dye sentitized solar cells with TiO2 and ZnO. ICEE
2013.
45. M. H. Bayanli, F. A. Boromand, M. R. Ftoalahi and M. Fathipour, “Quazi 3
dimensional simulation of polymer light emitting diode”, ICEE 2013.
46. M. Fathipour, H. Ghasri, M. Ghorbanzadeh and P. Vadani. Moghadam,
“Investigation of ion implantation for fabrication of In Sb based array photo
detector”, ICEE 2013.
47. T. Afra, S. N. Anouseh, A. Taghinia and M. Fathipour, “A Numerical Study of a New
Four-Layer-Substrate Closing Device”, ICEE 2013.
48. M, Fathipour, “A Switch Capacitor Based Sample & Hold Using a Powerful Two-
Stage OTA with 13 ENOB of ADC and 100 Ms/s in CMOS 45nm”, ICEE 2013.
(Submitted)
49. M. Fathipour, “An Investigation in to the Effect of Gate Length on Electrical
Characteristics of A10.25 Ga 0.75/In0.1GaGa0,9N Pseudomorphic HEMTs”, ICEE
2013. (Submitted).
50. S. M. Moniri, G. Abaeiani and M. Fathipour, “ Particle Counting of Non-
Homogeneous Particles by Laser Scattering”, TCPE 2013
51. M. Fathipour, “An Investigation of Uniformly-Doped and Delta Doped
A10.25Ga0.75N/In0.1Ga0.9N Pseudomorphic HEMTs”, ICEE 2013. (Submitted).
52. M. Zamani, M. Javad, M. Fathipour and M. Ghasemi, “An Investigation in to the
Effect of Gate Length on Electrical Characteristics of Al0.25Ga0.75N/in0.1Ga0,9N
Based HEMT. Physics 91 Con, (submitted).
53. A. Mojab, M. Fathipour, M. A. Malakoutian and M. Ghasemi, “A Compact Model
for Current in High-Frequency High-power LDMOS. Physics 91 Con, (submitted).
54. M. Pournia and M. Fathipour, “A Comprehensive COMSL Model for Surface
Acoustic Wave RFID Tags and Post Processing Method to Analyze the Interrogated
Signals of the Tags”, ISAV 2012
55. M. Noei, H. Taghinejad, M. Taghinejad and M. Fathipour, “Analysis of Bandgap and
Single Atom Vacancies in Graphene Nnaoribbon Quantum Dots Using Density of
States”, ICSE 2012 (accepted).
56. M. Noei, S. M. Tabataei and M. Fathipour, “Uniaxial Strain in Armchair Graphene
Nanoribbons and Graphene Nanoribbon Field Effect Transistors”ICAEE 2012.
(Accepted).
57. M. Ghorbanzadeh, M. Asad, V. Fathipour and M. Fathipour, “The Impact of Fixed
Oxide Charge Density on the Performance of InSb Infrared Focal Plane Arrays”,
MIOMD-XI 2012, USA.
58. A. Haghshenas and M. Fathipour, “Dependence of Self-Heating Effect on Substrate
in AlGaN/GaN HEMT Devices”, ICEE 2012.
59. M. J. Mohammadzamani, S. M. Tabatabaei and M. Fathipour, “Leakage Current
Reduction in Domino Logic”, ICEE 2012.
60. M. Noei, S. M. Tabatabaei and M. Fathipour, “Numerical Analysis of Ballistic
Ultrathin Graphene Nanoribbon Field Effect Transistors”, ICEE 2012.
61. M. Asad, M. Ghorbanzadeh, Gh. Sareminia and M. Fathipour, “Investigation of
Optimum Junction Depth of InSb Infared Phtodiode”, ICEE 2012.
62. A. Elahidoost, M. Fathipour and A. Mojab, “Modeling the Effect of 1 MeV Electron
Irradiation on the Performance Degradation of a Single Junction AlxGa1-xAs/GaAs
Solar Cell”, ICEE 2012.
63. M. S. Feali and M. Fathipour, “Optimization of Microfluidic Fuel Cells Using Active
Control of the Depleton Boundry Layers”, FuelCell 2012.
64. S. Jalili, A. Marouf and M. Fathipour, “Low-Field Phonon Limited Mobility in
Graphene Nanoribbon”, ICNS4 Conference 2012.
65. A. Yazdanpanah and M. Fathipour, “The Effect of Edge Roughness on Transport
Properties of Graphene Nanoribbons”, ICNS4 Conference 2012.
66. A. Yazdanpanah and M. Fathipour, “A Numerical Study of Line-Edge Roughness
Scattering in Graphene Nano-Ribbons”, ICNS4 Conference 2012.
67. M. Nasirifar, A. Mojab and M. Fathipour, “Increasing Breakdown Voltage and
Decreasing Self-Heater SOI-LDMOS Transistors”, ICEE 2012.
68. M. Moradinasab, M. Fathipour, H. K. Taheri, M. Pourfath and H. Kosina, “On the
Role of Stone-Wales Defects on the Performance of Graphene Nanoribbon Photo
Detectors”, Graphene Week 2012.
69. M. Moradinasab and M. Fathipour, “An Improved SPICE AC Model for Nanoscale
MOSFETs with Non-Rectangular Gate”, Spain Conference 2012.
70. A. Mojab and M. Fathipour, “The Effect of Buried Contacts Shading on the
Performance Silicon Solar Cells, ICEE 2012.
71. A. Mojab, M. Fathipour, A. Malakoutian and M. Ghasemi, “A Compact Model for
Current in High-Frequancy High-Power LDMOS Transistors”, Physics 2012.
72. M. Mohammadzamani, M. Fathipour and M. Ghasemi, “An Investigation in to the
Effect of Gate Length on Electrical Characteristics of Al0.25Ga0.75N/In0.1Ga0.9
Based HEMT’, Physics 2012.
73. M, Asad, Gh. Saremi and M. Fathipour, “Investigation of Optimum Junction Depth
of in Sb Infrared Photo”, ICEE 2012.
74. S. M. Tabatabaei, M. Noei and M. Fathipour, “Numerical Analysis of Ballistic
Untrathin Graphene Nanorit”, ICEE 2012.
75. M.Moradinasab, H. Nematian, M. Noei, M. Pourfath, M. Fathipour and H. Kosina,
“Edge Roughness Effects on the Optical Properties Zigzag Garphene Nanoribbons: A
First Principle Study”, IWCE, USA, 2012.
76. H. Nematian, M. Moradinasab, M. Noei, M. Pourfath, M. Fathipour and H.
Kosina,”A Theorical Study of BN-Confined Graphene Nanoribbon Based Resonant
Tunneling Diodes”, IWCE 2012.
77. A. Mojab and M. Fathipour, “The Effect of Buried Contacts Shading on the
Performance of the Solar Cells ICEE 2012.
78. M. Moradinasab, H. Ntmatian, M. Pourfath, M. Fathipour and H. Kosina, “Theorical
Study of Single and Bilayer Graphene Nanoribbons Photodetedtors”, the
Electrochemical Society”, 2012.
79. A. Mojab, M. Fathipour and A. Elahidoust, “The Effect of Buried Contacts Shading
on the Performance Silicon Solar Cells”, Majlesi conference on electrical
engineering, August 2012
80. M. A. Malkoutian and M. Fathipour, “ Investigation of the carrier concentration and
laser peak power on the terahertz pulse generated by photoconductive antennas based
on LT-GaAs”, Majlesi conference on electrical engineering, August 2012
81. R. Hosseini, M. Fathipour, R. Faez and M. Ghalandarzadeh, “Comparison Study of
Circuit Performance in GAA Silicon Nanowire Transistor and DG MOSFET”, Int
Con on MEMS Khoy, 2012.
82. A. Haghshenas and M. Fathipour, “Dependence of Self-Heating Effects on
Passivation Layer in AlGaN/GaN HEMT Devices, ICNS$ 2012.

83. A. Farrokh Payam and M. Fathipour, “Effect of Tip Mass on Modal Flexural
Sensitivity of Rectangular AFM Cantilevers to Surface Stiffness Variation” Multi
frequency Conference, Spain, 2011.
84. V. Fathipour, M. A. Malakoutian, S. Fathipour and M. Fathipour, “Analysis and
Design of a Novel SHOT LDMOS with Strained Si Channel”, 19th Iranian
Conference on Electrical Engineering ICEE 2011, May 17-19
85. S. Jalili and M. Fathipour, “Low-Field Acoustic Phonon Limited Mobility in GNRs”,
ISDRS 2011, Dec 7-9.
86. S. Rajabi, A. A Orouji, H. Amini and M. Fathipour, “A Novel Power High Electron
Mobility Transistor With Partial Steeped Recess in the Drain Access Region For
Performance Improvement”, ICSCCN 2011.
87. S. Rajabi, A. A Orouji, H. Amini and M. Fathipour, “A Novel Double Field-Plate
Power High Electron Mobility Transistor Based on AlGaN/GaN for Performance
Improvement”, ICSCCN 2011.
88. M. Fathipour, “Compact Modelig of LDMOS Transistor Including Ion Implanted
Channel”, Int Con on Electron Devics and Solid State Circuits, IEEE 2011.
89. P. Fazel. Hamedani, M. Fathipour,A. Taginia and F. Yazdi, “Study the Effect of
Varying the Thickness of Intermediate Band on the Intermediate Band Solar Cells
Efficiency”, ICAEE 2011.
90. A. Taghinia, M. Fathipour, P. Fazel and F. Yazdi, “Comparison of Single Junction
GaAs and Ino2ga0.8N Based Solar Cells at Various Temperatures”, ICAEE 2011
91. Sh. Shahbazi, and M. Fathipour, “A Novel LDMOS Device with Advanced-
RESURF.
92. S. Jalili, A. Marouf and M. Fathipour, “Investigation of Acoustic Phonon Scattering
in Semiconducting Armchair Graphene Nanoribbons”, ICNB 2011, Dec 28-30
93. S. Rajabi, A. A. Orouji, M. Fathipour, “AlGaN/GaN/AlGaN Double –
Heterojunction High Electron Mobility Transistor for Performance Improvement”,
IEEE India ICSCCN 2011, 13-15 Sep 2011,
94. A. Yazdanpanah, M. Pourfath, M. Fathipour, H. Kosina and S. Selberherr, “An
Analytical Model for Line-Edge Roughness Limited Mobility of Graphene
Nanoribbons”, IEEE Transactions on Electron Devices, Vol 58, No 11, November
2011.
95. A. Haghshenas and M. Fathipour, “Investigation of Self-Heating Effects in included
Field Plates Structures in AlGaN/GaNHEMT Devices”, ICNS4 2011.
96. A. Yazdanpanah and M. Fathipour, “The Effect of Edge Roughness on Transport
Properties of Graphene Nanoribbons”, Nano Korea, ICNS4, 2011.
97. R. Hosseini, M. Fathipour and R. Faez, “Channel Length Scaling and the Impact of
Exchange-Correlation Effects on the Performance of GAA SNW Transistor”,
Nanokorea 2011.
98. A. Yazdanpanah, M. Pourfath, M. Fathipour and H. Kosina, “Compact Model for the
Electronic Properties of Edge-Disordered Graphene Nanoribbons”, 12th Int.
Conference on Thermal Mechanical and Multiphysics Simulation and Experiments
in Microelectronics and Microsystems, EuroSimE 2011.
99. M. Pourfath, A. Yazdanpanah, M. Fathipour and H. Kosina,”On the Role of Line-
Edge Roughness on the Diffusion and Localization in GNRs”, IEEE 2011.
100. M. A. Malakoutian and M. Fathipour, “Terahertz Pulse Generation of
Photoconductive Antennas Based on LT-GaAs with Different Carrier Concentration
and Laser Peak Power”, Majlesi Conference, Iran 2011.
101. H. Godazgar, M. K. Moravej Farshi and M. Fathipour, “IMOS Transistor with
Graded Energy Band”, ICEE 2012.
102. V. Fathipour, A. Mojab, M. A. Malakoutian, S. Fathipour and M. Fathipour, “The
Impact of Processes Parameter Variations on the Electrical Characteristics of a
RESURE LDMOS and its Compact Modeling”, ISDRS 2011, IEEE.
103. M. Fathipour, A. Haghshenas and A. Mojab, “Dependence of Self Heating Effect on
Passivation Layer in ALGa/GaN HEMT Devices”, ISDRS 2011, IEEE.

104. M. Fathipour and S. Shahbazi, “Characteristics Optimization od LDMOS Device

with Advanced-RESURE”, ISDRS 2011, IEEE.
105. M. Fathipour and S. Jalili, “Low-Field Acoustic Phonon Limited Mobility in GNRs”,
ISDRS 2011, IEEE.
106. M. Fathipour, A. Mojab, V. Fathipour, A. Haghshenas and M. A. Malakoutian, “A
New Compact Modeling For the Current and Drift Region Resistance in High
Performance LDMOS Transistors”, ISDRS 2011, IEEE.
107. H. Nematian, M. Moradinasab, M. Noei, M. Fathipour, M. Pourfath and H. Kosina,
“A Theorical Study of BN-Confiend Graphene Nanoribbons Based Resonant
Tunneling Diodes”, IWCE 2011.
108. M. Fathipour and A. Haghshenas, “Dependence of Self-Heating Effects on
Passivation Layer in AlGaN/GaN HEMT Device”, ISDRS 2011, IEEE.
109. M. Fathipour, A. Yazdanpanah and A. Motagi, “The Effect of edge Roughness on
Transport Properties of Graphene Nanoribbons”, ISDRS 2011, IEEE.
110. M. Fathipour, S. Jalili and A. Marof, “Low Field Phonon Limited Mobility in
Graphene Nanoribbon”, ISDRS 2011, IEEE.
111. A. Yazdanpanah, M. Pourfath and M. Fathpour, “A Numerical Study of Line-Edge
Roughness Scattering in Graphene Nanoribbons”,
112. V. Fathipour, M. A. Malakoutian, “Analysis of a Source Hetrojunction LDMOS
Device with Strained Silicon Channel”, Iran, ICEE 2011.
113. A. Mojab, M. Fathipour and V. Fathipour, “The Effect of Different Methods of
Texterization on the Performance of Monocrystalline and Multicrystalline Solar
Cells”, Semiconductor Con Dresden, 2011.
114. S. Omidbaksh and M. Fathipour, “SiGe/Strained Silicon Devices for Improvement in
SOI Device Parameters”, Iran, ICEE 2011.
115. A. Mojab, M. Fathipour, and Atousa Elahidoost, “Comparison of Different Surface
Texturization on the Performance of Monocrystalline and Multicrystalline Silicon
Solar Cells” Physics Conference of Iran, 2011. (in Persian)
116. A. Haghshenas and M. Fathipour, “Self-heating Effect Depend On Passivation Layer
In AlGaN/GaN HEMT Devices”, Iran Physic Conference 2011.
117. M. Ghasemi and M. Fathipour, “LDMOS Transistor Modeling Including Ion
Implantation in the Channel Region”, Physics Conference of Iran, 2011. (in Persian)
118. A. Mojab, M. Fathipour and M. A. Malakoutian, “Investigation of the Effect of
Buried Contacts Shading on the Performance of Silicon Solar Cells”, Physics
Conference of Iran, 2011. (in Persian)
119. Z. Ahangari, M. Fathipour, “Investigation of te Effect of Thin in Insulator Layer at
the Metal/Semiconductor Interface on Schottky Barrier Height” Physics Conference
of Iran, 2011. (in Persian)
120. M. Ghasemi, M. Fathipour, “LDMOS Transistor Modeling Including Ion
Implantation in the Channel Region” Physics Conference of Iran, 2011. (in Persian)
121. S. Rajabi, A. A. Orouji, M. Fathipour, H. A. Mogadam and S. E Jamali, Mahabadi,
“A Novel Double Field-Plate Power High Electron Mobility Transistor Based on
AlGaN/GaN for Performance Improvement “IEEE Africon, ICSCCN 2011.
122. S. Rajabi, A. A. Orouji, M. Fathipour, H. Amini Moghadam and S. E. Jamali
Mahabadi, “A Novel Power High Electron Mobility Transistor with Partial Stepped
Recess in the Drain Access Region for Performance”, IEEE Africon, ICSCCN 2011.
123. A. Efekhari, M. Fathipour, A. A. Gharebagh, “Dimension Optimization of a Large
Area PN-Junction via Genetic Algorithm”2011.
124. A. Eftekhari, M. Fathipour, A. Alavi Gharabagh, “Design of a Large Area PN-
Junction Si Thermoelectric Device via Genetic Algorithm, Feb 2011.
125. A. Mojab and M. Fathipour, “The Optimized Texturing Angle for Triangular
Texturization in Multicrystalline Silicon Solar Cells”, International Conference on
Electrical Computer, Electronic and Communication Engineering, Waset 2011.

126. V. Fathipour, M. A. Malakoutian and M. Fathipour ““Analysis and Design of a

Novel SHOT LDMOS with Strained Si Channel,” ICCMS 2011, accepted, January
2011, Mumbai, India.
127.M. Moradinasab, M.Fathipour, M. A. Malakoutian, and V. Fathipour, “A Compact Physical
Model for Subthreshold Current in Nanoscale FD/SOI MOSFETs”, IEEE ULSI, Germany
2011.
128.A. Mojab and M. Fathipour, “A Numerical Study of Acidic Texterization of Multicrystalline
Silicon Sollar Cells”, NNT, Korea, 2011.
129.A. Mojab and M. Fathipour, “The Optimized Texturing Angle for Triangular Texturization in
Multicrystalline Silicon Solar Cells” ICECECE, Amesterdam, 2011.
130. A. Farrokh Payam, M. Fathipour, “Effect of Tip Mass on Modal Flexural Sensitivity
of Rectangular AFM Cantilevers to Surface Stiffness Variations” Proceeding of 3rd
Multifrequency Conference, Madrid, Spain 2011.
131. M. Moradinasab, H. Nematian, M. Pourfath, M. Fathipour and H. Kosina,
“Theoritical Study of the Single and Bilayer Graphene Nanoribbons Photodetector”,
ULIS, Scothland, 2011
132. A. Haghshenas, A. Mojab and M. Fathipour, “Dependence of Self Heating Effect on
Passivation Layer in AlGaN/GaN Hemt Devices”, ISDRS, Maryland, 2011.
133. A. Farrokh Payam, M. Fathipour, “An Analytical Method to Model the Capillary
Force Between Several AFM Tip and Sample”, Proceeding of Nanokorea 2010.
134. A. Mojab, M. Fathipour, V. Fathipour, M. A. Malakoutian and A. Haghshenas, “A
New Compact Modeling for the Current and Drift Region Resistance of High-
Performance LDMOS Transistors”, NanoKorea Conference, August 2010.
135. V. Fathipour, M. A. Malakoutian, S. Fathipour, M. Fathipour, “Design and Analysis
of a Novel Strained Silicon Channel RF LDMOS”, WASET, Sep.2010.
136. M. A. malakoutian, M. Moradinasab, V. Fathipour and M. Fathipour, “A Compact
Physical Model for Subthreshold Current in Nanoscale FDSOI MOSFETs”, IUMRS-
ICEM 2010.
137. M. Fathipour, S. N. Anousheh, K. Ghiafeh Davoudi, V, Fathipour, “The Analysis of
Photoconductive Semiconductor Switch Operation in the Frequency of 10 GHz,”
WASET/ICECECE, Amesterdam, Netherland, Sep 2010.
138. M. Fathipour, M. A. Malakotian, V. Fathipour, A. Mojab, M. M. Alameh and M.
Mordainasab, “Ihe Impact of Process Parameters on the Output Characteristics of an
LDMOS Device” IUMRS-ICEM 2010.
139. M. Fathipour, A. Elahidoost, A. Mojab, V. Fathipour , “The Effect of a Graded Band
Gap Window on the Performance of a Single Junction Al xGa1-xAs/GaAs Solar Cell,”
WASET/ICECECE , September 2010, Amsterdam, Netherlands.
140. V. Fathipour, M. A. Malakootian, S. Fathipour and M. Fathipour, “Design,
Investigation and C-V characterization of a Novel Strained Silicon Channel RF
LDMOS,” WASET/ICECECE , September 2010, Amsterdam, Netherlands.(IN
DOROST NIST)
141. V. Fathipour, M. A. Malakoutian, S. Fathipour and M. Fathipour, “Analysis of a
Novel Strained Silicon RF LDMOS “,” WASET/ICECECE, September 2010,
Amsterdam, Netherlands. 2010.
142. M. A. Malakoutian, V. Fathipour, M. Fathipour, A. Mojab, M. M. Allame, M.
Moradinasab, “The Impact of Process Parameters on the Output Characteristics of an
LDMOS Device” WASET/ICECECE, September 2010, Amsterdam, Netherlands.
143. F. Karimi, M. Fathipour, H. Ghanatian and V. Fathipour, “Improvement of Short
Channel Effects in Cylindrical Strained Silicon Nanowir Transistor,” WASET,
September 2010, Amsterdam, Netherlands.
144. F. Karimi, M. Fathipour, H. Ghanatian and V. Fathipour, “A Comparison Study of
Electrical Characteristics in Conventional Multiple-gate Silicon Nanowire
Transistors,” WASET, September 2010, Amsterdam, Netherlands.

145. N. Peyvast, M.A. Malakoutian, M. Fathipour, V. Fathipour, M. Moradinasab and

M.M. Allameh, “Effects of a Buried Oxide Region on the Breakdown Voltage of
Power LDMOS’, ULIS, Glasgow, Scotlnad, UK, March 2010
146. M.A.Malakoutian, Vala Fathipour, Alireza Mojab, Morteza Fathipour, Fateme
Karimi, Hamdam Ghanatian. “Modeling and Analysis of the Effect of the Process
Parameter Variations on the Performance of an LDMOS Authors”, (submitted
IUMRS).
147. F. Karimi, H. Ghanatian, V. Fathipour, M. Fathipour, Fargol Hassani, “The use of
High-κ Gate Dielectric to Improve the Short Channel Effects in Cylindrical Strained
Silicon Nanowire Transistor “,IUMRS-ICEM 2010, Korea, august 2010.
148. F. Karimi, H. Ghanatian, M. Fathipour, V. Fathipour, “: The impact of structural
parameters on the electrical characteristics of Silicon NanoWire Transistor base on
NEGF Authors”, IUMRS-ICEM 2010, Korea, August 2010.
149. M. Fathipour, M. A. Malakoutian, V Fathipour, N. Payvast and M. Moradinasab,“Ihe
Impact of Etched Field Oxide on Breakdown Voltage and Saturation Current of
LDMOS Transistor”, IUMRS-ICEM 2010, Korea, august 2010
150. N.Payvast, M. Fathipour, V. Fathipour, M. A. Malouutian, “A Novel 4H-SiC Power
MOS”, IUMRS-ICEM 2010, Korea, August, 2010.
151. M. Fathipour, H. Ghanatian, F. Karimi and M. Fathipour, “Nanoscale Silicon-On-
Multi- Layered Insulator”, IUMRS-ICEM 2010, Korea, August 2010.
152. V. Fathipour, M. A. Malakoutian, A. Mojab, M. Fathipour*, N.Peyvast, “The Impact
of Process Variations on the Electrical Characteristics of a RESURF LDMOS and its
compact Modeling”, Nanokorea Symposium, Kintex, Korea, August 2010.
153. V. Fathipour, M. A. Malakoutian, M. Fathipour*, “Analysis and Design of a Novel
SHOT LDMOS with Strained Si Channel, Nanokorea symposium, Kintex, Korea,
august 2010.
154. K. Baghbani Parizi, N. Payvast, B. Khairodini, S. Mohajerzadeh and M. Fathipour, “
A Schottky Barrier S/D MOSFET Employing an Ultrathin SiO2 Layer for Asymetric
Operation” .2010.
155. B. Abaszadeh and M. Fathipour, “The Impact Ge Mole Fraction on the Electrical
Characterestics of Nanoscale Si/Strained SiGe pMOSFET,” International Conference
on Nanotechnology, 4-6 Augusr, Canada. 2010.
156. M. Vadizadeh and M. Fathipour, “Using Low-k Oxide for Reduction of Leakage
Current in Double Gate Tunnel FET”, IEEE ULSI 2009.
157. A. Farrokh Payam, M. Fathipour, M.j. Yazdanpanah, “A Backstepping Controller for
Piezoelectric Actuators with Hysteresis in Nanopositioning”, 4th IEEE int. Conf. on
Nano/Micro Engineering and Molecular Systems, Jan 5-8 2009.
158. A. Farrokh Payam, M. J. Yazdanpanah, and M. Fathipour, “Design of a Feedforward
Controller for AFM Nanopositioning Based on Neural Network Control Theory”, 4th
IEEE int. Conf. on Nano/Micro Engineering and Molecular Systems, Jan 5-8 2009.
159. A. Farrokh Payam, M. Fathipour, Eihab M. Abdel-Rahman, M. J. Yazdanpanah,
“Estimation of Sample-Tip Height in Non-Contac Mode Atomic Force Microscopy
Using an Adaptive Nonlinear Observer, ICEE 2009, May 2009.
160. M. Fathipour, F. Hassani, F. Karimi, “ A Quantum Transport Approach to the
Calculation of Gate Tunneling Current in Nano Scale FD SOI MOSFETs”, ICEE
2009, May 2009.
161. M, Fathipour, N. Shoa Azar, “Improvement of Breakdown Voltage in AlGaN/GaN
Power Devices by Employing a Super Junction Structures”, ICEE 2009, May 2009.

162. G. Ansaripour, M. Fathipour, M. Fathi, “Carrier Quantum Transport in a Nano

MOSFET”, Iranian Physics Conference 88, 15-18 August 2009.
163. M. Fathipour, R. Azadvari, “Increasing Breakdown Voltage by Field Plate in Power
High Electron Mobility Transistors (HEMTs) based on AlGaN/GaN”, Iranian
Physics Conference 88, 15-18 August 2009.
164. M. Fathipour, R. Azadvari, “Improving Performance in Single Field Plate Power
High Electron Mobility Transistors (HEMTs) based on AlGaN/GaN”, 11th
International Symposium on Quality Electronic Design-Asia, 2009 IEEE, Sep 2009.
165. A. Shah Mansouri, M. Fathipour, “Design and Simulation ob Vibratory Gyroscope”,
2th Annual International Conference on Automobile Electronics Industry. 5-6 Feb
2009.
166. M. Tahermaram, M. Vadizadeh, M. Fathipour, “A Novel Structure for Improvement
the Ion / Ioff Ratio in Nano-Scale Double Gate Source-Hetrojunction-MOS-Transistor”
ULIS 2009, IEEE, Germany.
167. M. Fathipour, M. Tahermaram, M. Vadizadeh, “Reduction the Off-State Current
Mechanisms in Double Gate SHOT Structure with Asymmetric Gate Oxide and
Work Function Engineering”.
168. M. Tahermaram, M. Vadizadeh, M. Fathipour, “Novel Techniques for Reduction the
Off State Leakage Cur Components in Nano Scale Source-Hetrojunction –MOS-
Transistor”, MINDSS 2009, India.
169. M. Tahermaram, M. Vadizadeh, M. Fathipour, A. Eslamzadeh, “Employing Work
Function Engineering and Asymetric Gate Oxide in Nano-Scale Source-
Hetrojunction-MOS-Transistor” EIT 2009, IEEE, Canada.
170. M. Vadizadeh, M. Fathipour, B. Davaji, “New Challenges on Leakage current
Improvement in Tunnel FET by Using Low-K Oxide, ISQED 2009, IEEE, Malaysia.
171. B. Davaji, M. Fathipour, M. Vadizadeh, A Numerical Study of Silicon Opening
Process, ISQED 2009, IEEE, Malaysia.
172. M. Tahermaram, M. Fathipour, Hamdam. Ghanatian, M. Vadizadeh, “Novel
Techniqes for OFF-State Current Components Reduction in Double Gate Source-
Hetrojunction-MOS-Transistor”, ISQED 2009, IEEE. Malaysia.
173. M. Tahermaram, M. Fathipour, Hamdam. Ghanatian, M. Vadizadeh, “Novel
Techniqes for OFF-State Current Components Reduction in Double Gate Source-
Hetrojunction-MOS-Transistor”, ISQED 2009, IEEE. Minedas, India.
174. M. Moradinasab and M. Fathipour, “Numerical Study of Scalling Issues of C-
CNTFETs”, ISQED 2009, IEEE. Malaysia.
175. M. Moradinasab and M. Fathipour,”Stable, Low Power and High Performance
SRAM based on CNFET”, IEEE 2009.
176. M. Moradinasab and M. Fathipour,” A Comparison Study of the Effects of Supply
Voltage and Temperature on the Stability and Performance of CNFET and Nanoscale
Si-MOSFET SRAMs, IEEE 2009.
177. G. Ansaripour, M. Fathipour, M. Fathi, “Carrier Quantum Transport in a Nano
MOSFET,” Iranian Physics Conference 2009, Iran.
178. F. Hassani, M. Fathipour, F. Karimi, “A Quantum Transport Approach to the
Calculation of Gate Tunneling Current in Nano-Scale FD SOI MOSFETs”, ICEE
2009. Iran.
179. S.Haydari, A. A. Orouji, M. Fathipour, “Design and Analysis of a New Structure for
UTB-SOI. MOSFET to Support Self Heating Effect,” ICEE 2009, Iran.
180. K. Baghbani Parizi, N. Payvast, B. Khairodini, S. Mohajerzadeh and M. Fathipour,
“An Improved Schottckey Field Effect Transistor Using Ultra Thin Oxide for
Introducing Non-Systemic Structure,” ICEE 2009, Iran.
181. M. Moradinasab and M. Fathipour, “Design of SRAM Using Carbon Nanotube Field
Effect Transistor,” ICEE 2009, Iran.
182. M. Moradinasab, B. Ebrahimi and M. Fathipour, “A Compact Physical Model for
Subthreshold Current in Nanoscale FD/SOI MOSFETs”, IEEE 2009.
183. M. Moradinasab and M. Fathipour, “SRAM Cell Design Using CNFET”, Iran, 2009.

184. F.Karimi, M. Fathipour, and R. Hosseini, “The Impact of Structural Parameter on

Electrostatic Characteristic of Gate All Around Silicon Nanowire Transistor”, Int
Semiconductor Device Research Symposium, Maryland, 2009.
185. A. Yazdanpanah, M. Pourfath, M. Fathipour, H. Kosina and S. Selberherr, “A
Numerical Study of Graphene Nano-Ribbon Based Resonant Tunneling Diodes”,
International Symposium on Graphene Devices: Technology, Physics and Modeling,
November 17-19 2008 University of Aizu, Wakamatsu, Japan.
186. A. A. oroji, M. Fathipour, S. Sharbati, “A comparison analysis of the small signal
characteristics of the Nano scale SIC Field Effect Metal” NEEC 2008, March 2008.
(In Persian).
187. M. Fathipour, Z. Esmailzade Kanani, “Design of a 3 axis MEMS gyroscope using
piezoreristive sensor”, NEEC 2008, March 2008. (In Persian).
 188. M. Fathipour, N. Shoa Azar, N. Payvast M. Fathipour, Z. Esmailzade Kanani,
“Investigation of the methods for reducing the electric field in the oxide of a
UMOSFET-ACCUFET device” NECC 2008, MARCH 2008. (In Persian).
189. , H. Saniee. Arani, M. Fathipour, “Fabrication of a VCD using
RF MEMs capacitor and inductor”, NEEC 2008. March 2008. (In Persian).
190. S. Alimohamadi, M. Fathipour, A. Shahmoradi, Zavare, “Design of piezoelectric
gyroscopes”, NEEC 2008, March 2008. (In Persian).
191. . H. Sohrabi, O. Fatemi, M. Fathipour, A. H. Bakhtiary, “Using Scanning Electron
Microscope (SEM) as an e-beam lithography device (EBL)” , NEEC 2008, March
2008. (In Persian).
192. M. Fathipour, H. Nematian, H. Haj. Ghasem, “A novel double gate Si Ge IMOS
device on insulator” NEEC 2008, March 2008. (In Persian)
193. M. Fathipour, Z. Ahangari, F. Kohani, M. Vadizade, “A novel asymmetric gate
oxide technology to reduce gate induced drain leakage current in nano scale silicon
on insulator devices”, NEEC 2008, March 2008. (In Persian).
194. M. Fathipour, H. Hokm. Talat, “Design and analysis of feedback loop in a MEMS
gyroscope for low quantization noise”, NEEC 2008, March 2008 (In Persian).
195. F. Kohani, M. Fathipour, H. Nematian, “Investigation of the effect of the body
thickness on the operation of Nano scale DG-SOI MOSFETs in the subthreshold
regime”, NEEC 2008, March 2008 (In Persian).
196. M. Fathipour, A. Farrokh. Payam, “Design of a comparative observer and
backscattering controller for approximation of undesirable variation in spring and
attenuation constants of a MEMS capacitive gyroscope”, NEEC 2008, March 2008.
(In Persian).
197. M. Fathipour, F. Arab. Hassani, A. Farrokh. Payam, “A hybrid control method based
on nonlinear control to eliminate the pull effect in a MEMS gyroscope”, NEEC
2008, March 2008 (In Persian).
198. M. Fathipour, A. Orouji, S. Heydari, “ Analysis and Simulation Study of the
Electrical and Temperature Characteristics of a new Structure of SOI-MOSFET
(DSBO-SOI) (in Persian), Annual Conference of Physics, Sep 2008.
199. M. Vadizadeh, M. Fathipour, A. Amid, “A Novel Structure for Optimization of
Switching Speed in Nanoscale Tunnel FٍET, ICNN 2008, IEEE, Malysia.
200. A. Farokh Payam, F. Arab Hassani, and M. Fathipour, “An Estimator for the MEMS
Capacitive Accelerometer Based on Adaptive Back Stepping Theory”, 26th
International Conference on Microeletronics, MIEL 2008. May 2008.
201. A. Yazdanpanah, M. Pourfath, M. Fathipour, H. Kosina, S. Selberherr, “ A Numerical
Study Of Graphene Nano-Ribbon Based Resonant Tunneling Diodes”, International
Symposium on Graphene Devices Technology, Physics and Modeling,May 2008.
202. Y. Abdi, S, Mohajerzadeh, M.H, Sohrabi, M. Fathipour, and M. Aragchini, “Novel
Branched Nanostructure of Carbon Nanotubes on Si Substrate Suitable for the
Realization of Gas Sensors” NSTI- Nanotech, 2008.
203. A. Orouji, S. Sharbati and M. Fathipour, “A Novel Thin-Film Power MOSFET with
an Asymmetrical Buried Oxide Double Step Structure”, 6th International Conference
on Electrical Engineering ICEENG 2008. 27-29 May.2008.
204. K. B. Parizi, K. Zand, and M. Fathipour, “Investigation of Effects of Cell Size and
Asymmetric Arrangement on Performance and Meta-Stable Energy of Quantum-Dot
Cellular Automata”, Physics Conference of Iran 2008. (In Persian).
205. M. Fathipour, A. Orouji and S. Haydari, “Analysis and Simulation Study of the
Electrical and Temperature Characteristics of a New Structure of SOI-MOSFET
(OSBO-SOI)”, Physics Conference of Iran2008. (Iin pertain).
206. S. Sharbati, M. Fathipour, and A. Orouji, “Investigation of Electrical Characteristics
of the Submicron Silicon Carbide MOSFETs”, 2nd International Congress on
Nanoscience and Nanotechnology, ICNN 2008. 28-30 Oct, 2008.
207. F. Kohani, and M. Fathipour , “The Impact of Silicon-Cap on Electrical
Characteristics of Schottky Barrier p-MOSFET with Strained Chanel”, ICSE 2008
208. M. Vadizadeh, M. Fathipour, and A, Amid, “A Novel Nanoscale Tunnel FET
Structure for Increasing On/Off Current Ratio”, 20th International Conference on
Microelectronics, IEEE, ICM 2008. Sharje.
209. H. Nematian, M. Fathipoure and M, Nayeri,, “A Novel Impact Ionization MOS (I-
MOS) Structure using a Silicon- Germanium/Silicon Heterostructure Channel”, 20th
International Conference on Microelectronics, IEEE, ICM 2008.
210. S. Haydari, A. Orouji, M. Fathipour, “Analysis and Simulation Study of the
Electrical and Temperature Characteristics of SOI MOSFET with Si3N4”, (in
Persian), International Student Conference Electrical Engineering, Sep 2008.
211. S. Haydari, A. Orouji, M. Fathipour, “Nanoscale SOI MOSFET with Double Step
Buried Oxide: A Novel Structure for Suppressed Self-Heating Effects” ICM
(International Conference on Microelectronic), Dec 2008.
212. M. Vadizadeh, M. Fathipour, “ Using low-k Oxide for Reducing Leakage Current
and Increasing the Ion/Ioff Ratio in Tunneling Field Effect Transistor (TFET)”. ICEE
2009 Conference, 2009.
213. M. Vadizadeh, M. Fathipour, “Using Low-K Oxide for Reduction of Leakage
Current in Double Gate Tunnel FET”, ULIS 2009, IEEE, Germany.
214. H. Nematian, M, Fathipour,” Reducing Breakdown Voltages in Impact Ionization
Metal-Oxide-Semiconductor (I-MOS) Devices using Hetero Structure” IUMRS,
Sidney, Australia, 28-31 Aug 2008.
215. M. Fathipour, Z, Ahangari, “Impact of channel thickness on the Electrical
Characteristics of Nanoscale Double Gate SOI MOSFET with Metal Source Drain”
IUMRS, Sidney, Australia, 28-31 Aug2008.
216. M. Fathipour, Z, Ahangari, M. Vadizadeh, “Asymmetric Gate Oxide Thickness
Technology for Reduction of Gate Induced Drain Leakage Current in Nanoscale
Single Gate SOI MOSFET’. IUMRS 2008, IEEE, Sidney, Australia, 28-31 Aug
2008.

217. N. Peyvast, N. Shoazar, M. Fathipour, “ A Novel 6H-SiC UMOSFET-ACCUFET

with low Specific On-Resistance and Critical Electric Field”. IUMRS, Sidney,
Australia, 28-31 Aug 2008.
218. M. Moradinasab, B. Ebrahimi, M. Fathipour, B. Forouzandeh, “A Compact Physical
Model for Subthreshold Current in Nanoscale FD/SOI MOSFETs”. IUMRS, Sidney,
Australia 28-31 Aug 2008.
219. M. Moradinasab, F. Karbassian, M, Fathipour, S. Pourmozaffari, “Modeling of
Multi-Wall Carbon Nanotube Field-Effect Transistors”. IUMRS, Sidney, Australia,
28-31 Aug.
220. A. Farrokh Payam,, M. Fathipour, M.J. Yazdanpanah, “Design of a Hybrid
Control System for Atomic Force Microscope Using Adaptive Nonlinear
Observer and Backstepping Controller, ICNN 2008, October 2008.
221. F. Arab Hassani, and M. Fathipour, “An Investigation into Electrical Characteristics
of the Double Gate p-IMOS and its Comparison with the Single Gate p-IMOS”, 16th
Iranian Conference on Engineering, ICEE 2008, May 13-15 2008.
222. M. Moradinasab, B. Ebrahimi, M. Fathipour and B. Forozandeh, “A Compact
Physical Model for Subthreshold Current in Nanoscale FD/SOI MOSFETs”, Int Con
of Electronic Material, Australia, 2008.
 223. M. Moradinasab, F. Karbassian, M. Fathipour and S. Pourmozafar, “Modeling of
Multi-Wall Carbon Nanotube Field-Effect Transistors”, Int Con of Electronic
Material, Australia, 2008.
224. M. Moradinasab and M. Fathipour, “CNFET Quantum Simulation”, Iran, 2008.
225. B. Abaszadeh, M. Fathipour, “Study of the Electrical Characteristics of Nanoscale
Si/Strained SiGe Heterostructure pMOSFET”, ICEE 2008, may 13-15 2008.
226. M. Moradinassab, H. Hoseinzadegan, M. Fathipour, “A Compact Current-Voltage
Model for Dopped CNFET in Subthreshold Region”, ICEE 2008, may 13-15 2008.
227. F. Kohani, H.Nematian, M.Fathipour, “Novel Method for Decreasing Capacitances
in Nanoscale DG SOI MOSFET in Subthereshold Region”, ICEE 2008, May 2008.
228. F.A.Hassani, A.Farrokh Payam, M. Fathipour, “Designing a Nonlinear
Controller for a MEMS Accelerometer, NEEC 2008 (In Persian).
229. M. Moradinasab, M. Hoseinzadegan, M. Fathipour, “Compact Current-Voltage
Model for Carbon Nanotube MOSFETs in Subthreshold Regime” ICEE 2008, Feb.
2008.
230. A. Farrokh Payam, F.A. Hassani, M. Fathipour, “Designing an Estimator for
a MEMS Accelerometer”, ICEE 2008, May 2008. (In Persian)
231. A. Farrokh Payam, M. Fathipour, M.J. Yazdanpanah, "Atomic Force
Microscope: Real Time Modeling, Control and Simulation”, ICEE 2008, May 2008.
232. A. A. Orouji, M Fathipour, S, Sharbati, “ A Comparison Study of Small Signal
Characteristics of SiC MOSFET” Islamic Azad University, Najaf Abad, 6-7 March
2008. (in Persian)
233. A. Farrokh Payam, M. Fathipour, M.J. Yazdanpanah”Design a Backstepping Controler for Atomic
Force Microscope”, NN08, July 2008.
234. . Samaneh Sharbati, Ali A. Orouji and M. Fathipour, "A Novel Thin-Film Power
MOSFET with an Asymmetrical Buried Oxide Double Step Structure," Ministry of
Defense Military Technical College 6th International Conference on Electrical
Engineering, Cairo, Egypt. May 27-29, 2008.
235. A.A.Orouji, S. Sharbati, M. Fathipour "6H-SiC lateral Power MOSFETs with an
Asymmetrical Buried Oxide Double Step Structure" International Conference on
Microwave and Millimeter Wave Technology ICMMT2008, Nanjing, China, April
21-24 2008.
236. M. Fathipour, B. Abbedzadeh, “A Study of the Electrical Characteristics of
NanoScale Si/Strined SiGe pMOSFET”. 16th Iranian Conference on Electrical
Engineering Tarbiat Modares un, ICEE 2008, Tehran, Iran, May 2008.
237. H. Nematian, F. Kohani, M. Fathipour, “Novel Method for Decreasing the Fringle
Capacitances in Nanoscale DG SOI MOSFET in Subthreshold Region”. 16th Iranian
Conference on Electrical Engineering Tarbiat Modaresun, ICEE 2008, Tehran, Iran,
May 2008.
238. F. Arab Hassani, M. Fathipour, , “An Investigation into Electerical Characteristics of
the Double Gate p-IMOS and its Comparison with the Single Gate p-IMOS” 16 th
International Conference on Electrical Engineering, ICEE 2008, Tehran Iran, May
2008.
239. M.Fathipour, M. Vadizade, Z. Ahangari, F. Kohani, “A Novel Asymmetric Gate
Oxide Thickness Technology for Reduction of Gate Induced Drain Leakage Current
in Nanoscale MOSFET Device for Low power applications”. 16 th International
Conference on Electrical Engineering, ICEE 2008, May 2008.
240. S. Sharbati, M. Fathipour, A. A.Orouji," Investigation of Electrical
characteristics of Submicron Silicon Carbide MOSFETs," 2nd International
Congress on Nanoscience and Nanotechnology, 2008 (ICNN2008), University of
Tabriz and Iranian Nanotechnology Society (INS), 28-30 October 2008.
241. S. Sharbati, A.A.Orouji, and M. Fathipour "A Novel Partial SOI Power Device
with Step in Buried Oxide for Improvement of Breakdown Voltage," (ICSE) 2008
IEEE International Conference on Semiconductor Electronics, Johor Bahru,
Malaysia. Proc. 2008.
242. M. Fathipour, B. Abaszade, “A Study of the Electrical Characteristics of Nanoscale
Si/SiGe/Si Hetrostructure pMOSFET”. 2th Conference on Nanostructures 2008NS,
Kish Iran, March 2008.
243. F.A. Hassani, A. Farrokh Payam, M. Fathipour, “An Adaptive Nonlinear Estimator
for the MEMS Capacitive Accelerometer Based on Adaptive Input-Output Feedback
Linearization”. Proceeding of International Semiconductor Devices Symposium
IEEE/ISDR 2008, Maryland, USA, Dec 2008.
244. Ali, Orouji, M. Fathipo, S. Sharbati, “Analysis and Simulation of thd Drain Induced
Barrier Lowering (DIBL) Effect in Silicon Carbide MESFET Transistors”. Proc. Of
10th Iranian Student Conference on Electrical Engineerinf, Industrial Esfahan
University, Iran, No ELC4-4, Summer 2007.
245. A. A. Arouji, M. Fathipour, S. Sharbati, “Comparative Analysis of AC
Characterization Silicon Carbide in Nano-MOS Transistors”. Proc. International
Conference on Electrical Engineering, Azad University of Esfehan (Najaf Abad
unit), Esfehan, Iran, paper No 7822346, spring 2007.
246. F. Kohani, M. Fathipour, H. Nematian, “The Effect of Body Thickness on the
Application of DG SOI MOSFET in Subthreshold Region”. Iran, Najaf Abad, NEEC
2007, M 2007.
247. M. Fathipour, M. Ghelichkhani, “Compute Pressure and Potential Distribution in
Circuit/Device Modeling of Integrated Micro Fluidic Devices”. Paper submitted to
Najaf Abad Conference. 2007.
248. A.Farrokh Payam, , M.Fathipour, M.Jalalifar, “ Backstepping Control
Approach for Closed Loop Feedback Control of Atomic Force Microscope”,
IEEE/INMIC 2007 Conference, January 2007.
249. A. Farrokh Payam, F.A. Hassani, M. Fathipour, “Design of a Sliding-Mode
Controller in a Hybrid Closed Loop Control System for a MEMS
Accelerometer”, ICST 2007, December 2007.
250. A. Farrokh Payam, F.A. Hassani, M. Fathipour, “Design of a Hybrid
Closed Loop Control Systems for a MEMS Accelerometer Using Backstepping
Principle” Proceeding of the 19th International Conference on Microelectronics (ICM
2007), Egypt, Dec 2007.
251. M. Fathipour, F.Arabb Hassani, “A Comparison Study between Double and Single
Gate p-MOS”. (IEEE2007), International Namibia Windhoek, Sep 2007.
252. M. Fathipour, A. Khorami, F. Bahmani, “A Comparison Study of the Effect of the
He-Xe and Ne-Xe Mixtures on the Excitation Efficiency”. URO DISPLAY 2007,
Moscow Russia, Sep 2007.

253. M. Fathipour, H. Nematian. H. Hajgasem, F. Farbiz, “A Novel SiGe-On-Insulator

IMOS Device with Reduced Bias Voltages”. Maryland USA, ISDRS 2007, Dec.
2007.
254. M. Fathipour, F. Arabhassani, “Design of a Hybrid Closed Loop Control System for
a MEMS Accelerometer Using Backsteping Principle”. 19 th International Conference
on Microelectronics ICM 2007, Cairo Egypt, Dec 2007.
255. A. Farokhpayam, F. Arabhassani, M. Fathipour, “Design of a Hybrid Closed Loop
Control System for a MEMs Accelerometer Using Sliding-Mode Principle”. 2th
International Conference on Sensing Technology, Massey New Zeland ICST 2007,
Nov 2007.
256. M.Fathipour, Z Ahangari, "Electrical Characteristics of Double Gate SOI MOSFET
with Metal Source/Drain" 15th International Conference on Electrical Engineering,
Tehran, Iran, ICEE 2007, May 2007.
257. M. Fathipour, B. Abaszade, F. Kohani, F, Farbiz, “The Effect of Ge Mole Fraction on
the Electrical Characteristics of Nanoscale Si/SiGe Hetrostructure pMOSFET”.
ISDRS 2007, USA, Nov 2007.
258. M. Fathipour, H. Nematian, F. Kohani, “The Impact of Structural Parameters on the
Electrical Characteristics of Nanoscale DG-SOI MOSFETs in Subthreshold Region”.
SETIT 2007, IEEE Tunisia, Mar 2007.
259. M. Fathipour, F. Arabhassani, M, Mehran, “A Comparison Study between Double
and Single Gate p-IMOS”. Africon 2007, Peretoria Africon, Sep. 2007.
260. M. Fathipour, F Arabhassani, “A Comparison Study between Double and Single Gate
p-MOS”. Africon 2007, Namibia Africon, Dec 2007.
261. M Fathipour, Z Ahangari, "A Comparison Study of Electrical Characteristic of
Schottky Source Drain and Doped Source Drain Double Gate SOI MOSFET" 4 th
International Conference: Sciences of Electronic, Technologies of Information and
Telecommunications, SETIT 2007, Tunisia, Mar. 2007.
262. M. Fathipour, Z. Ahangari, “Electrical Characteristics of Double Gate SOI MOSFET
with Metal Source/Drain”. 15th International Conference on Electrical Engineering,
ITRC, Tehran Iran, Sep 2007.
263. M. Fathipour, H. Nematian, F. Kohani, “The Impact of Structural Parameters on
Electrical Characteristics of Nano Scale DG SOI MOSFET in Subthreshold Region”.
Iranian Annual Physic Conference, Iran, Yasouj, Sep 2006.
264. M. Fathipour, F. Kohani, H. Nematian, “Impact of Structural Parameters on the
Electrical Characteristics of Nanoscale DG SOI MOSFETs for Low Power
Applications”. First International Congerss on Nanoscience and Nanotechnology,
ICNN 2006, Tehran Iran, Oct 2006.
265. M. Fathipour, R. Foladi, “A Study of Electrical Characteristics of Nanoscale FD SOI
MOSFET using an Effective Potential”. International Congress on NanoScience and
NanoTechnology ICNN 2006, Tehran Iran, Dec 2006.

266. M Fathipour, Z Ahangari, "A Comparison between Electrical Characteristics of Nano

Scale Double Gate Silicon on Insulator and Germanium on Insulator with
Source/Drain Schttckey Barrier". Science and Nano Technology. University of
Shiraz. Iran. Feb 2006.
267. M. Fathipour, Z. Ahangari, “ A Comparison Study of Electrical Characteristics of
Double Gate Silicon /Germanium on Insulator with Schottky Source Drain in Nano
Scale Regime”. NTC 2006, Iran, Shiraz, Jan 2006.
268. M. Fathipour, F. Kohani, H. Nematian, “An Investigation in the Effect of Structural
Parameters on the Electrical Characteristics of Nano Scale DG SOI MOSFET”. NTC
2006, Iran, Shiraz, Jan 2006.
269. M Fathipour, Z Ahangari, "The Electrical Characteristics Nano Scale Double Gate
SOI MOSFET with Metal Source and Drain and its Comparison with Double gate
Transistor with Doped Source Drain". Science and Nano Technology. NTC 2006
University of Shiraz. Iran. Jan 2006.

270. M.Fathipour, Z.Ahangari, "An Study of Electrical Characteristics of Nanoscale

Double Gate SOI MOSFET" International Congress on Nano Science and Nano
Technology, ICNN 2006, Tehran University, Tehran, Iran, Dec.2006.
271. M. Fathipour, F. Kohani< H. Nematian, “ Impact of Strutural Parameters on the
Electrical Characteristics of Nano0scale DG-SOI MOSFET for low Power
Applications”. International Congress of Nanoscience and Nano technology, ICNN
2006, Tehran Iran, Dec 2006.
272. M Fathipour, Z Ahangari, "A Comparison Study of Nano Scale Schottky
Source/Drain Double Gate (DG) SOI MOSFET with Doped Source/Drain DG (SOI)
MOSFET", International Congress on Nano Science and Nano Technology, ICNN
2006, Tehran University, Tehran, Iran, Dec.2006.
273. R. Azimirad, M. Goudarzi, O. Akhavan, A.Z. Moshfeg,and M. Fathipour, “ Growth
and Characterization of Tungsten Oxide Nanobelts with U-shape Cross Section”.
ICSFS.13 (13th International Conference on Solid Films and Surfaces) Argentina, 6-
10 Nov 2006.
274. M. Fathipour, Z. Ahangari, “A comparison Study of Double Gate and Fully Depleted
SOI Nano Scale MOSFET”. Iran Physics Conference. University of Shahrood. Sep
2006.
275. M Fathipour, H Nematian, F Kohani, "Study of the Effect of Fabrication Parameters
on the Electrical Characteristics of the Nano Scale DG SOI MOSFET" 2006.
276. M. Fathipour, Z. Ahangari, “ MOS Transistors in Nano Scale Regime A Comparison
Study of Electrical Characteristics of Fully Depleted SOI MOSFET and Double Gate
MOSFET”. Iran Physic Conference, University of Shahrood, Sep 2006.
277. B Esfandyarpour, Y Mortazavi, A Behnam and M Fathipour, " Improved FIBL
Effects in FD SOI MOSFETs with High-K Dielectrics using a Dual Material Gate
(DMGD) Structure". 20th Electro Chemical Society Meeting . Abstract#9.2005.
278. Roohollah Tarigat, Amir Goodarzi, Shams Mohajerzadeh, Behnaz Arvan, M. R
Gaderi, and M Fathipour, "Realization of Flexible Plasma Display Panels on PET
Substrates" Proceedings of the IEEE vol 93, No. 7.July 2005.
279. F.Farbiz, Y.Mortazavi, M.Fathipour, E.Fathi. "Investigation of Gate Tunneling
Leakage Current in a Novel Fully Depleted SOI MOSFET with a Thin Oxide".
International Semiconductor Device Symposium (ISDRS) , University of Maryland,
Champaign IL U.S.A, Dec. 2005.
280. Y.Mortazavi, M.Fathipour, E.Fathi, F.Farbiz. "Investigation of Gate Leakage in a
Novel SOI MOSFET" Proceedings of 13th ICEE 2005, pp.440, Vol. 1,Zanjan, Iran,
May 10-12, 2005.
281. A.R.Khorami, M.Fathipour, M.Mofidi. "Investigation of Argon Partial Pressure on
the Performance of Plasma Flat Panel Displays." 13 th ICEE 2005, pp.91, Vol.1,
Zanjan, Iran, May 10-12, 2005.
282. J.Kousorkhi, M.Fathipour, E.Arzai, B.Esfandyar Pour. "Calculation of Velocity of
Carriers in Nano Scale Balestic DG-MOSFETs". Proceeding of 7 th Dense Matter
Iranian Physics Society. Pp.30, University of Science and Technology, Tehran. Feb
2005.
283. B.Esfandyar pour, Y.Mortazavi, M.Fathipour, E.Fathi, A. Behnam. "Field Induced
Barrier lowering (FIBL) in Nano Scale MOSFETs with high Gate Dielectric
Constant". Proceeding of 7th Conference on Dense Matter, Iranian Physics Society.
Pp.305, University of Science and Technology Feb.2005.
284. M.Fathipour, Shirin.Ghanbari, E.Arzai. "A Study of Halo Implant on the Nano Scale
MOSFET Performance" Iranian Physics Conference Khoram Abad, University of
Lorestan. Aug 29 2005.
285. A.Behnam, E.Fathi, P.Hashemi, B.Esfandyarpour, M.Fathipour. "The Influence of
the Stacked and Double Material Gate Structures on the Short Channel Effects in
SOI MOSFETs". Pp.68, IEEE ICM Moraco 2004.

286. M. Moghaddam, M. Fathipour, E.Fathi and N.Massumi. “Extracting of Substrate

Network Resistance in RFCMOS”. Topical Meeting on Si Monolitic Integrated
Circuits in RF Systems. Atlanta, Georgia, pp.219, IEEE 2004.
287. M. Moghadam, E. Fathi, N.Massumi, M.Fathipour, Mortazavi and M.R.Ghaderi. “A
New Methodology for Substrate Network Resistance Extraction in RF CMOS”.
ANTEM 2004. pp.71, URSI, Ottawa on Canada, July 20, 2004.
288. E.Fathi, B. Afzal and M. Fathipour. “Effective Channel Length Extraction of MOS
Transistors with Halo/Pocket Implants”Mashhad, Iran, pp.168, ICEE May 2004.
289. E. Fathi, B. Afzal, M. Fathipour, A. Khaki Firooz “An Improved Shift - and - Ratio
Leff Extraction Method for MOS Transistors with Halo Implants”, International
Semiconductor Device Research Conference, pp.430, 2003
290. D. Shahrejerdi, B Hekmat Shoar Tabary, M. Fathipour and A. Khaki Firooz “An
Approach to Low Cost Fabrication of Lateral COOLMOS Structures” International
Semiconductor Device Research Conference, pp.272, 2003.
291. M.Y. Azizi, A. Saeedfar, O. Shoaei and M. Fathipour, “Analysis of Thermal Noise in
Very Low Voltage Pipeline ADC’s “pp. 446, ICEE May 2003.
292. S. Delshadpour, M.Fathipour, “A method for Assiging Analog Weight in Nural
Networks”, pp.7, ICEE May 1999.
293. M.Fathipour, G.Gholami Zahed. "A Study of I 2L Structure without on Epitaxial
Emitter" 7th ICEE, pp.125, ITRC, Tehran Iran, 1999.

294. M. Sharifi, M. Fathipour, “Optical Modeling of Quantum Effects in the Tunneling

Diodes” Sharif University of Technology Tehran, pp.101, ICEE May 1998.
295. K. Moaber, M. Fathipour, “A Response Surface Model For Controlling Fabrication
Process in Semiconductor Devices”, ICEE May 1998.
296. K. Moaber, M. Fathipour, “An Investigation in to Mesh Generation for
Semiconductor Devices”. Pp.137, ICEE May 1998.
297. M. Hosein Abadi, M. Fathipour, “Modeling of Boron Pre-deposition Step using
Neural Networks and Multi Response Surface”. pp.10, ICEE May 1996.
298. K. Moaber, M. Fathipour, “Controlling the Diffusion of Boron into Silicon during
Predeposition”. pp.23, ICEE May 1996.
299. M. Fathipour, M. Ghandchi, “Design of n +pνn+ Power Transistors”. Pp.38, ICEE
MAY 1996.
300. M. Hosein Abadi, M. Fathipour, Caro Luccas, “A Model for Run by Run Control of
Semiconductor Processes”, International Conference on Expert and intelligent
Systems. pp.1, Sept, 1995.
301. Sotoodeh and M. Fathipour, “Calculation of Contact Currents in Two-Dimensional
Simulation of Bipolar Transistors”, pp.50, ICEE1995.
302. F. Tahami, and M. Fathipour, “Design Equations for Optimization of Epitaxial Layer
in Double Diffused Bipolar Transistors “, pp.10, ICEE, 1994.
303. F. Tahami and M. Fathipour, “BiCAD: A Simulation Software for Design of
Fabrication Process of the Bipolar Transistor”, pp.56, ICEE 1994.
304. A. Ehsani Ardakani, M. Fathipour, “Reverse Engineering of Wide Band Amplifier
IC-733”, pp.47, ICEE 1993.
305. M. Raesean, and M. Fathipour, “Two Dimensional Simulation of Impurity Diffusion
into Silicon, as applied to Fabrication of Integrated Circuits” Iran Physics
Conference, pp. 98, Sept. (1992).
306. M. Fathipour, “Electrical and Chemical Analysis Methods for studying of
Semiconductor Surfaces”. Irans 1st Seminar on surface Metallurgy and Tribology.
pp. 32, (1992).
307. M.Fathipour, M. Amini. “Fabrication of Optical Fibers using MOCVD method:
Theory and Technology”. Iran Physics Conference, Sept. (1990)

308. R. Vatan, H. Rezae Homami, M. Fathipour. “One-Dimensional Simulation of Bipolar

Semiconductor Devices in Steady State, using Personal Computers”. Iran Physics
Conference, pp. 24, Sept. (1990).