EC Test-7 Sol

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01. (a)
Sol: The crystal structure of NaCl is rock salt. The ionic radii are related to lattice parameter as
2 (ra + rc) = a
No. of molecules per unit cell = 4
4 3 4 3
Volume of the molecules = 4 rc  ra 
3 3 
3
Volume of unit cell = a
Packing fraction =
4

4   rc3  ra3
3

8ra  rc 
3
2   rc  
3
1     2
3   ra  
  3
 
1  0.54)3 

 rc 
3
1.543
1  
 ra 
Packing fraction = 0.663
01. (b)
Sol: Vth across the terminals of RL is found from the circuit shown in Fig. (1).
6 j8 6 j8
+ + A
+
1100 V 
o Vth  900oV
  
B
Fig. 1
Using superposition theorem
1100o 900o
Vth =   1000o V
2 2
Rth is found by replacing voltage sources by short-circuit
Zth = (6 + j 8) || (6 + j 8) = (3 + j 4) 
Thevenin’s equivalent across A B is shown in Fig. (2)
Zth = (3+j4)
A
+ I
Vth =1000o V  RL

Fig. 2 B
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For maximum power transfer

RL = 32  42 = 5 
100 100 10 4
I  , I  , I2 
8  j4 80 80
Power absorbed by load ‘RL’
10 4
= I2 RL = 5
80
 625 W
01. (c). (i)
I CP  W2 
Sol: Base transport factor  T  = 1   2 

I EP  2L P 
The common emitter current gain is given by
0  T
0  
1   0 1   T
 W2 
1   2 
T  2L P   2L2P 
Since  =1,  0     1
1  T   W 2   W 2 
1  1   2 
  2L P 
W 2L2P
If <<1, then  0 
LP W2
01. (c). (ii)

Sol: LP  DP P  100  3  107  5.477  103 cm  54.77m
Therefore, the common emitter current gain is
2L2P 2(54.77 10 4 ) 2
0    1500
W2 2 10 
4 2

01. (d)
Sol: s-domain equivalent circuit
1
I1(s) A 2S B I2(s)
+ +
V1(s) 1 5
2
 3I1(S) 
V2(s)
– –

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KCL at (A)
V (s) V (s)  V2 (s)
I1 (s) = 1  1
1/ 2 1 / 2s
1 s
V1 (s)  I1 (s)  V2 (s) ------ (i)
2(s  1) s 1
KCL at (B)
V (s) V (s)  V1 (s)
I 2 (s)  2  3I1 (s)  2
5 1 / 2s
 1
I 2 (s)  3I1 (s)  2s   V2 (s)  2sV1 (s)
 5
Substitute the value of V1(s) in above equation

10 s  1 s 2s 2
We get I 2 (s)  3I1 (s)    V2 (s)  s  1 I1 (s)  s  1 V2 (s)
 5 
(2s  3) 11s  1
I 2 (s)  I1 (s)  V2 (s) -------- (ii)
s 1 5(s  1)
Now, When V2(s) = 0
From 1
V (s) 1
h 11  1  h 11 
I1 (s) 2(s  1)
From 2
I (s) 2s  3
h 21  2  h 21 
I1 (s) s 1
When I1(s) = 0
From 1
V (s) s
h 12  1  h 12 
V2 (s) s 1
From 2
I (s) 11s  1
h 22  2  h 22 
V2 (s) 5(s  1)
 h - parameters of the network:

 1 s 
 2(s  1) s 1 
 
 2s  3 11s  1 
 s  1 5(s  1) 

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01. (e) (i)

Sol: Based on diamagnetic response superconductors can be classified as type I and type II.
(i) Type I superconductors:
Superconductors exhibiting a complete Meissner effect (Perfect diamagnetism) are called
type I superconductors (also known as soft superconductors). When the magnetic field
strength is gradually increased from its initial value H < H c, at Hc the diamagnetism abruptly
disappear and the transition from superconducting state to normal state is sharp as shown in
fig a. Pure specimens of Al, Zn, Hg and Sn are some examples of type I superconductors.
(ii) Type II superconductors: In type II superconductors as shown figure (b), up to field H c 1 the
specimen is in a pure superconducting state. The magnetic flux lines are rejected. When the
field is increased beyond Hc1 (the lower critical field), the magnetic flux lines start penetrating.
The specimen is in a mixed state between H c 1 and Hc 2 (the upper critical field). Above Hc 2 ,
the specimen is in a normal sate. This means that the Meissner effect is incomplete in the region
between H c 1 and Hc 2 . This region is known as Vortex-region. Type II superconductors are
known as hard superconductors. Zr and Nb are some examples of this type. Type II
superconductors are of great practical interest because of the high current densities that they can
carry.
Type I Type II
M M
Super Super Vortex

Normal Normal
conducting conducting region
state
Hc H  Hcl Hc Hc2 H
(a) (b)
Properties:
1. Below a specific temperature called critical temperature T c, their electrical resistivity becomes
zero. Hence currents induced in s.c. loops below T c continue to flow for very long time and are
called persistent currents.
2. This superconductivity below Tc can be destroyed by applying an external magnetic field called
critical field Hc. This Hc depends on temperature. Below Tc as
 T 2` 
H c  H c 01  2 
 Tc 
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3. They show perfect diamagnetism when they become superconductors by expelling all the
magnetic flux lines suddenly from their interiors. i.e., inside a superconductor.
M
B   0 (M  H)  0  X   1
H
This is called Meissner effect
4. When current passing through an s.c exceeds a critical value ‘ic’, the corresponding magnetic
field ‘H’ on the superconductor equals its critical field ‘H c’ at that temperature and it becomes
normal conducting. This critical current per unit cross sectional area is called critical current
density Jc and this effect is called “Silsbe’s effect”.
01.(e) (ii)
Sol:
  T 2 
Hc = H0 1     and ic = 2 r Hc
  Tc  
Given T= 4.2K
Tc = 7.18 K
H0 = 6.5 x 104 A/m
 4.2  
2
Hence Hc = 6.5  104 1     = 4.276  10 A/m
4
  7.18  
Substituting in the formula for the critical current
ic =   10–3  4.28 104 = 134.51A
02. (a) (i)

Sol:
In many circuits, after the circuit is analyzed, it is realized that only a small change needs to be
made to a component to get a desired result. In such a case, we would normally have to
recalculate. The compensation theorem allows us to compensate properly for such changes
without sacrificing accuracy.
Statement:
In any linear bilateral active network, if any branch carrying a current I has its impedance Z
changed by an amount Z, the resulting changes that occur in the other branches are the same as
those which would have been caused by the injection of a voltage source of (–IZ) in the
modified branch.
In other words, in a linear network N, if the current in a branch is I and the impedance Z of the
branch is increased by Z then the increment of voltage and current in each branch of the
network is that voltage or current that would be produced by an opposite voltage source of value
vc = (–IZ) introduced into the altered branch after the modification.
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Proof:
Consider the network N, having branch impedance Z.
Let the current through Z be I and its voltage be V.
Let Z be the change in Z.
Then, I (the new current) can be written as
Voc
I  ;
Z  Z  Z th
Voc Voc  Voc  Z  IZ Vc
I  I  I         
Z  Z  Z th Z  Z th Z  Z  Z th Z  Z  Z th
 Z  Zth  Z  Z  Zth 
Here, negative sign clearly indicates the current is in opposite direction to reference.
Vc = IZ Zth
Zth
I Z+Z
Voc +- Z
I
 Vc=IZ
(a) Circuit for explaining (b) Equivalent circuit using

compensation theorem compensation theorem
02. (a) (ii)

Sol:
Given I
100(A) j15 2
–j5
3
B
With A–B open, the current is
100  15090 
I  j15 
5  j5  j15 5  j10
Thevenin voltage
15090 
Vth  VAB  I   j5 
5  j10
 
 5  90   67.08  63.4 V


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Thevenin impedance,
 j5  5  j15
Z th  Z AB   7.07  81.86   .
 j5  5  j15
Thus, the Thevenin’s equivalent circuit is shown in Fig.
Zth=7.07–81.86()
A
–+ Vth=67.08–63.4(V)
02. (b) (i)

Sol: The emitter base junction is forward biased, built in potential is given by
KT  N A .N D   5 1018  2 1017 
Vbi  ln    0.0259 ln  
q  n i2   (9.65 10 ) 
9 2
= 0.956V
The depletion-Layer width in the base due to forward bias of emitter base junction
2 s  NA  
Vbi  V 
1
W1   
q  ND  N A  N D 
 5  1018 
2  1.05  10 12 
  
17 
1
17 
0.956  0.5
1.6  10 19  2  10  5  10  2  10 
18
= 5.36410–6 cm = 5.36410–2m
Similarly we obtain built in potential for the base collector junction

 2  1017  1016 
Vbi  0.0259 ln    0.795V
 9.65  10 9 2 
 
and depletion layer width in the base due to reverse bias base collector junction
 N A 
2 s  2  1.05  10 12  1016  
Vbi  V   0.795  5
1 1
W2    19
  16
17  17 
q  N D  N A  N D  1.6  10  2  10  10  2  10 
= 4.25410–6 cm = 4.25410–2 m
Therefore the neutral base width is

W = WB – W1 – W2
= 1–5.36410–2 – 4.25410–2
= 0.904m

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qVEB qVEB
n i2
(ii) Pn(0) = Pn0 e KT  e KT
ND
(9.65  10 9 ) 2 0.0259
0.5
 e
2  1017
 1.127 1011 cm3
02. (c) (i)

 PM 
Sol: The density of copper =  3 
 Na 
Given P = no. of atoms/unit cell = 4 (since the structure is F.C.C)
M = atomic weight = 63.5
N = Avogadro number
= 6.023  1023per gm-mole
r = 1.28 A;
But a = 2 2 r
4  63.5
Density =
6.023 10 (2 2 1.28 10 8 ) 3
23
= 8.89 gm/cc
02. (c) (ii)

Sol: The density of diamond is given by
 PM 
d=  3
 Na 
Where P = no. of atoms/unit cell = 8
M = atomic weight = 12
N = Avogadro number
= 6.023  /gm mole
a = lattice parameter
= 3.56 A
8 12
d=

6.023 10  3.56 10 8
23
 3
= 3.53 gm/cc

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02. (c)(iii)
Sol:
(1) Frenkel defect: If an atom or ion is displaced from its normal lattice point (thereby creating a
vacancy) and it occupies an interstitial site, the vacancy - interstitial pair formed is called Frenkel
defect. This kind of defect is usually formed in ionic crystals only. It is rare in the normal close
packed structure. (see figure 1).
+ – + – + – +
– + – + – + –
+
+ – – + – +
cation vacancy
interstrial pair
– + – + – + –
+ – + – + – +
–
anion vacancy – + + – + –
interstrial pair
+ – + – + – +
Figure 1
(2) Schottky defect: In an ionic crystal, consider that an anion vacancy is created. Then to maintain
charge neutrality, a cation vacancy will be created. The anion cation vacancy pair is called
schottky defect. (see figure 2).
+ – + – + – +
Anion Cation
– + – + – + –
Vacancy pair
+ + – + – +
– + – – + –
+ – + – + – +
– + – + – + –
+ – + – + – +

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(3) F-centre defect: The simplest colour centre is the F-centre. The name comes from German word
for colour, “Farbe”. It is usually produced by heating crystal in excess alkali vapour or by
x-irradiation.
– + – + –
+ +–+
– +– +–
F-centre has been identified by electron spin resonance as an electron bound at a negative ion
vacancy. This occurs in alkali halides as well as in other ionic crystals.
When white light passes through the crystal, a fraction of the light corresponding to a narrow
frequency region is absorbed, and the transmitted light is therefore coloured. Hence the name
colour centre.
03. (a) (i)

Sol: The given circuit is shown in Fig. 1
Initial value of i1(t) = i1(0+) = Lim s I1 (s) ; Initial value of i2(t) = i2(0+) = Lim s I 2 (s)
s s 
Final value of i1(t) = i1() = Lim s I1 (s) ; Final value of i2(t) = i2() = Lim s I2 (s)
s0 s 0
15
+
150V 30mH 6

i1 i2
Fig. 1
I1(s) and I2(s) are found from the circuit shown in Fig. 2
15 
R1
+
150 V I1(s) 30mH I2(s) R2 6
 L
Fig. 2
Mesh equations:
150
(R 1  L s) I1 (s)  L s I 2 (s)  ………. (1)
s
 Ls I1(s) + (R2 + Ls) I2(s) = 0 ……… (2)
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Representing (1) & (2) in matrix form
R 1  Ls  Ls   I1 (s)  150 

   I (s)   s 
 Ls R 2 Ls   2   0 
R1  L s  Ls
   R1 R 2  L s (R1  R 2 )
 Ls R 2  Ls
150
 Ls 150
1  s  ( R 2  L s)
s
0 R 2  Ls
150
R1  L s
2  s  150 L
 Ls 0
150 ( R 2  L s) 1
I1 (s)   I 1 (s ) 
s R 1 R 2  L s (R 1  R 2 ) 
150 L 2
I 2 (s)   I 2 (s) 
R 1 R 2  L s (R 1  R 2 ) 
150 L 150 50
i1 (0  )  Lim s I1 (s)    A
s L (R1  R 2 ) 21 7
150 L 150 50
i 2 (0 )  Lim s I2 (s)    A
s  L (R 1  R 2 ) 21 7
150 R 2 150 150
i1 ()  Lim s I1 (s)     10 A
s0 R1 R 2 R1 15
i 2 ()  Lim s I2 (s)  0 A
s 0
03. (a) (ii)

Sol: When switch is in position ‘1’ for long time. It will go to steady state condition. Inductor will
acts as a short circuit.
25
50V
iL(0–)
V 50
Current through inductor I L    2A
R 25
   
i L 0   i L 0   2A
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When switch is moved to position (2)

Inductor acts as a current source of 2A
25
100/s
2s
iL(0–)
By converting inductor current and inductor parallel network into series it will look like
25
100/s – 4V
+
2s
03.(b) (i)
Sol: Antiferromagnetic materials:
In ferromagnetic materials, tendency for parallel alignment of the electron spins is due to
quantum mechanical exchange forces. In certain materials when the distance between the
interacting atoms is small, the exchange forces produce a tendency for antiparallel alignment of
electron spins of neighbouring atoms. This kind of interaction is encountered in
antiferromagnetic and ferromagnetic materials. The temperature at which the maximum occurs
is called the Neel temperature, TN. Above Neel temperature, the susceptibility is observed to
follow the equation
C

T
where C is the Curie constant and  the paramagnetic Curie temperature.
Properties of antiferromagnetic materials

1. Electron spin of neighbouring atoms are aligned antiparallel
2. Antiferromagnetic susceptibility depends greatly on temperature.
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Magnitude of Temperature
susceptibility dependence Examples
C Salts of transition
 when T > TN
Small, positive T Transition elements.
  T when T < TN
3. Initially susceptibility increases slightly with temperature and beyond Neel temperature
the susceptibility decreases with the temperature.
4. Spin alignment is antiparallel.
Examples:
Antiferromagnetic materials occur commonly among transition metal compounds, especially
oxides. Examples include hematite, metals such as chromium, alloys such as iron manganese
(FeMn), and oxides such as nickel oxide (NiO). There are also numerous examples among high
nuclearity metal clusters. Organic molecules can also exhibit antiferromagnetic coupling under
rare circumstances, as seen in radicals such as 5-dehydro-m-xylylene.
03. (b) (ii)

Sol: When a ferromagnetic material is magnetized in one direction, it will not relax back to zero
magnetization when the imposed magnetizing field is removed. It must be driven back to zero by a
field in the opposite direction. If an alternating magnetic field is applied to the material, its
magnetization will trace out a loop called a hysteresis loop. The lack of extracability of the
magnetization curve is the property called hysteresis and it is related to the existence of magnetic
domains in the material. Once the magnetic domains are reoriented, it takes some energy to turn
them back again. This property of Ferro magnetic materials is useful as a magnetic "memory".
Some compositions of ferromagnetic materials will retain an imposed magnetization indefinitely
and are useful as "permanent magnets". The magnetic memory aspects of iron and chromium
oxides make them useful in audio tape recording and for the magnetic storage of data on computer
disks.
03. (b) (iii)

Sol: M = 3.0  10–4
H = 2  104 A/m
M
the intensity of the magnetization   ;
H
Hence M =  H = 3.0 10–4 2 104 = 6.0 Am–1
Flux density ( B) = 0 M  H  = 4  10–7(6+20000)
= 4  20006 10–7
= 0.0252 Wb/m2
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03. (c) (i)

Sol: Refer to Fig. 1, where I1 and I2 are mesh currents.
5 5H 2H
+ 8H
I1 3H
V1 6H
– I2 9H
Fig.1
Mesh equations:
+ j 11 I1 + ( j 6  j 2  j 3) I2 = V1
 + j 11 I1  j 11 I2 = V1 …………(1)
and ( j 6  j 2) I1 + j 3(I2  I1) + j 3 I2 + j 23  I2 = 0
  j 11 I1 + j 29 I2 = 0 …………. (2)
Representing (1) & (2) in matrix format
 J11  J11  I1  V1 

 J11 J 29  I    0 
  2   
V1  j11
0 j 29  j 29  V1
I1  
j11  j11  198  2
 j11 j 29 
V1  198 2
 = j 6.83 
I1 j 29 
 Effective inductance = 6.83 H.
(ii)
Sol: The given circuit is shown in Fig. 1 with terminals marked.
2 P 2 R 4 A
+ +
60V 2 25A 8 VAB



B B
Fig.1

: 17 : ESE MAINS-2018
Source transformation is used successively as shown in Fig. (2) to (9)
2 1
P P
+ +
60V 2 30V

 
B
Fig. 2 B
Fig. 3
1 P 2 3
R R
+
+
30V 25A  30V 25A
 
B B
Fig. 4 Fig. 5
R
R
+ +
10A 3 25A  35A 3
 
B B
Fig. 7
Fig. 6
3 3 R 4
R A
+
+
+ 8
 105V VAB
105V


 B
B Fig. 9
Fig. 8
From Fig. (9), applying voltage division rule

105  8
VAB   56 V
15

: 18 : ESE MAINS-2018
4(a) (i)
Sol: In solids the gap between the two outer most allowed energy bands depends on the
equilibrium spacing between the atoms. As shown in Figure below, this band gap decreases with
decrease of equilibrium spacing. We can classify the solids into metals, semiconductors and
insulators based on the value of the band gap.
Semiconductor
Metal
Insulator
Energy
3p
Forbidden energy
gap
0 Equilibrium Spacing r0 Interatomic

For different elements spacing
In the first group of solids called metals the electrons of the outer most orbits of atoms move
freely through out the metals. This is possible when
(i) Valence band is partially filled as shown in Figure (a)
(ii) A completely filled valence band overlaps with the partially filled conduction band as shown
in Figure (b)
Paritally filled
Paritally filled
Valence band Conduction band
Completely filled
valance band
(a) partially filled valence band (b) overlap of completely filled valence
band and partially filled CB
a) If the valence band is not full, valence electrons can move to other states within the same band
very easily and very little energy is required for movement of electrons. Examples are mono-
valence metals like sodium which has only half of the available states in the valence band filled.
b) In this case, the interatomic spacing is such that completely filled valance band overlaps with
the empty or partially filled conduction band. Hence the free electrons require very less energy
for their movement. Examples are metals such as zinc and magnesium.
In the second and third group of solids, interatomic spacing is such that there is a gap called
band gap between the completely filled valance band and completely empty conduction
band. Depending on the magnitude of the gap we can classify insulators (dielectrics) and
semiconductors.
: 19 : ESE MAINS-2018
Conduction band Conduction band
Eg=5.4eV Eg=1.1eV
Valence band Valence band
Diamond (insulator) Silicon (semiconductor)
The second group of solids namely insulators have relatively wide forbidden band gaps. For
typical insulators such as diamond and glass the band gap E g > 3eV [Figure (Diamond)]. On the
other hand, the third group of solids namely semiconductors have relatively narrow forbidden
bands. [Figure (silicon) ] For typical semiconductors such a silicon and germanium. E g  1eV.
04. (a) (ii)

Sol: Given a copper disk having diameter 2cm; thickness = 25 mm = 2.5 cm.
It has a resistivity = 70 n m = 70  109 m
10 9
the conductivity  =  1.43 10 7 mho.m 1
70
Assuming ambient temperature as 300 K, and using Weideman-Franz law, we get the coefficient of
thermal conductivity K as
K = σTL = 1.43  107 
  
= 105.105
Given the rate of flow of heat = 10W
 dT 
we have the thermal conductivity equation. Q  KA  
 dx 
 
K = 105.105 Wm k
A = r2 = 104m2
dx = 2.5cm = 2.5  102 m
Q.dx 
  Temperature drop (dT) =
KA
10  2.5 10 2
=
105.105 10 4  
dT = 7.58K
04. (b)
Sol: Since the circuit has three different frequencies ( = 0 for the dc voltage source), one way to
obtain a solution is to use superposition, which breaks the problem into single-frequency problem.
So we let
V0 = V1 + V2 + V3 ……….(1)
Where V1 is due to 5-V dc voltage source, V2 is due to 10 cos2t V voltage source, and V3 is due to
2 sin 5t A current source.
: 20 : ESE MAINS-2018
To find V1, we set to zero all sources except the 5-V dc source. We recall that at steady state, a
capacitor is an open circuit to dc while an inductor is a short circuit to dc. the equivalent circuit is
as shown in figure (a). By voltage division rule
1 4
+ –
V1
1
V1  5  1V ………(2) +
– 5V
1 4
(a)
To find V2, we set to zero both the 5-V source and the 2 sin5t current source and transform the
circuit to the frequency domain.
10 cos2t  100,  = 2rad/s
2H  jL = j4
1
0.1F    j5
j C
The equivalent circuit is now a shown in figure (b).

 j5 4
Let Z   j5|| 4   (2.439  j1.951) 
4  j5
j4 1 4
+ V2 –
 + -j5 
100 V –
(b)
By voltage, division rule,
V2 
1
1  j4  Z

100 0  
10
3.439  j2.049
 2.498  30.79 0 V
In the time domain,

V2 = 2.498 cos(2t – 30.79) V ………….(3)
To obtain V3, we set the voltage sources to zero and transform what is left to the frequency
domain.
2 sin 5t  2–90,  = 5 rad/s
2H  jL = j10
1
0.1F  –j2
jC
I1 1
+ V3 –
The equivalent circuit is shown in figure (c). –j2 4
j10 2–90A
 j2  4
Let Z1   j2 || 4   0.8  j1.6
4  j2
(c)
: 21 : ESE MAINS-2018
By current division rule,
I1 
j10
j10  1  Z1

2  90 0 A 
V3  I1  1 
j10
 j2  2.328   80 0 V
1.8  j8.4
In the time domain,
V3 = 2.33 cos(5t –80)
= 2.33 sin(5t + 10) V ………(4)
Substituting equation (2), (3), (4) in (1) we have
V0(t) = –1 + 2.498cos(2t–30.79) + 2.33sin(5t+10)V
04. (c) (i)

Sol: The total excess minority carriers charge can be expressed by
W
Q B  qA  [Pn (x )  Pn 0 ]dx
0
 W qVEB
 x 
 qA  Pn 0 e KT 1  dx
0   W 
W
qVEB
 x2 
 qA Pn 0 e KT  x  
 2 W  0
qVEB
KT
qAWP n 0 e

2
qAWP n (0)

2
WPn (0)
From the given fig. the triangular area in the base region is . By multiplying this value by q
2
and the cross sectional area A, we can obtain the same expression as Q B.
04. (c)(ii)
Sol:  c 
mnn


0.2366  10 30 1000  10 4  
q 1.6  10 19
= 1.4810–13s
= 0.148 ps
The mean free path is given by

L = V c = (107) (1.4810–13)
= 1.4810–6 cm
= 14.8nm

: 22 : ESE MAINS-2018
05. (a) (i)

Sol: The equivalent resistance between terminals AB is given by
1 2
2 1
0.8
Req
6
Req = 1.8 + [2//3] = 1.8 + =3
5
05. (a)(ii)
Sol: 1 k iC(t)
11 V
+
10 k 11 nF vC(t)
0
10 s 
10
Time constant T =  10 3  11  10 9  10  sec
11
If the input is 11 u(t),
t

vC(t) = F.V + (I.V – F.V) (1  e  ) ………….(1)
(F.V and I.V are the final and initial values of v C(t))
10
where F.V = 11  = 10 V and I.V = 0
11
When the pulse of 10  s is applied,
vC(t) as given in (i) is true for 0 < t < 10 s
 Peak value of vC(t) occurs at t = 10  sec
Peak value = 10 (1 e1) = 6.32 V
05. (b) (i)

Sol: The ionization energy for boron in Si is 0.045eV
At 300K, all boron impurities are ionized.
Thus PP = NA = 1015 cm–3
n2
np  i 
9.65  109 
2
 9.3  10 4 cm3
NA 1015
: 23 : ESE MAINS-2018
05. (b) (ii)

Sol: The boron atoms compensate the arsenic atoms;
We have PP = NA–ND = 31016 – 2.91016 = 1015cm–3
n2
np  i 

9.65  10 9 2
NA 1015
 9.3  10 4 cm3
05. (c)
 E 
Sol: n i  CT 3 / 2 exp  g 
 2kT 
 2 mk 
3/ 2
Where C = 2  
 h 
2
Conductivity   n i e e   h 
3/ 2
 2  22  9.109  10 31  1.38  10 23 
C  2 

 
7 x 6.626  10 34 2
 

/ 2
 554.098  10 54 
 2 
 68 
 307.327  10 
= 2 (1.7997  1014)3/2
= 2 2.414  1021
C = 4.829  1021
Taking T = 300K
2 1.38 1023  300
2kT 
1.6 1019
= 0.052eV
 E 
n i  CT 3 / 2 exp  g 
 2kT 
  1 .1 
= 4.829  1021 3003/2 exp  
 0.052 
= 4.829  1021 3003/2 6.50110–10
ni =163124.5  1011/m3
i = nie(e+h)
= 163124.5  10111.610-19 0.493
= 128672.6108
i = 1.287  10–3–1m–1

: 24 : ESE MAINS-2018
05.(d) (i)
Sol: Dual Network is:
2F
6A 2℧ t=0 10 mH
05. (d) (ii)

Sol:
it   2t 0  t 1
  2t  4 1  t  2
=0 other wise
i(t)
2
1 t
C F 0 1 2
2
it dt
1
C
Vc ( t ) 
t
 2  it dt

For 0  t  1:
1
Vc t   2  it dt

1
 2 2tdt  2V
0
For 1  t  2:
t
Vc t   2  it dt

t
 2 it dt  2
1
t 
 2   2t  4dt   2
1 
Vc(t)  2t  4t
2

: 25 : ESE MAINS-2018
05.(e)
Sol: Consider Given pure Ge,
Idrift = In + Ip= nqnEA + pqpEA
In nq n EA
Fraction of electron current = =
I n  I P nq n EA  pq p EA
In n 3500
 = = 3500
I n  I P  n   p 3500  1400 4900
In
= 0.714
In  Ip
Conductivity and Current Density of a Metal:
n = electron concentration, L
N = total number of electrons
N = n  volume A
N
n
volume T
T = time taken by carriers to move from one end to other end
L
Drift velocity (v) =
T
 v     1
L
T
Q Nq
Current (I)   ; where q is the charge of carrier.
T T
 2 
Nq
I
T
 3
I Nq
Current Density J  
A TA
L
From (1), T 
v
Substitute eq (1) in (3)
Nq Nqv N
J   .qv
L LA LA
A
v
J = nqv
J = nqE
J = nqE
I
J   nqE
A
I = nqEA
  ne  nq
: 26 : ESE MAINS-2018
06. (a)
Sol: Given data: V1 = 220 V, V2 = 122 V
V3 = 136 V
V2 = VR = 122V…….(1)
V3 = VR L  jVL = 136 V
 VR2  VL2 = 136 V

L
 VR2  VL2 = (136)2 …… (2)

L
Impedance of the circuit is

Z = R + RL + jXL
 IZ = IR + IRL + jIXL
 V = VR + VRL + jVL
So, V1 = V = VR  VR L  jVL = 220V
 V R  VR L  V
2 2
L
= 220
 VR2  VR2  VL2  2VR VR L = (220)2 …(3)

L
By substituting equations (1) & (2) in (3)

 (122) 2  (136) 2  2 122  VR L = (220)2
 VR L = 61.56V
 VR  VR L   122  61.56 
(i) Power factor of the circuit = cosckt =   =
   = 0.834 (lag)
 V1  220 
 VR   61.56 
(ii) Power factor of the Load = cosload =  L  =   = 0.4526 (lag)
 V3   136 
(iii) RL = 5
VR L  61.56V
 I.R L  61.56
 I .R L  61.56
 I .5  61.56
 I  12.312A = Irms
So, PLoad = I 2 .R L = I 2rms .R L = (12.312)2.5 = 757.93W

: 27 : ESE MAINS-2018

: 28 : ESE MAINS-2018
06. (b)
Sol: Let us consider an atom placed inside an electric field. The centre of positive charge is
displaced along the applied field direction while the centre of negative charge is displaced in the
opposite direction. Thus a dipole is produced. When a dielectric material is placed inside an
electric field such dipoles are created in all the atoms inside. This process of producing electric
dipoles which are oriented along the field direction is called polarization in dielectrics.
Polarization occurs due to several atomic mechanisms. When the specimen is placed inside
a d.c electric field, polarization is due to four types of process (a) electronic polarization (b)
ionic polarization (c) orientation polarization and (d) space charge polarization.
(i) Electronic polarization:

The displacement of the positively charged nucleus and the (negative) electrons of an atom in
opposite directions, on application of an electric field, result in electronic polarization. On
applying a field, the electron cloud around the nucleus readily shifts towards the positive end of
the field. As the nucleus and the centre of the electron cloud are separated by a certain distance,
dipole moment is created within each atom. The extent of this shift is proportional to the field
strength. Since the dipole moment is the product of the charge and the shift distance, dipole
moment is also proportional to the field strength.
Induced dipole moment   E (or)  = e E
Where  e=40 R3 is called electronic polarizabilty. The dipole moment per unit volume is
called electronic polarization. It is independent of temperature.
Pe= Ne= N e E.
(ii) Ionic polarization:

The ionic polarization is due to the displacement of cations and anions in opposite directions
and occurs in an ionic solid. Suppose an electric field is applied in the +ve x direction. The
positive ions move to the right by x1 and the negative ions move to the left by x2. Assuming that
each unit cell has one cation and one anion the resultant dipole moment per unit cell due to ionic
displacement is given by =e (x1+x2)
If 1 and 2 are restoring force constants of cation and anion and F newtons is the force due to
the applied field
F= 1 x1=2 x2
F
Hence x1 
1
Restoring force constants depend upon the mass of the ion and angular frequency of the
molecule in which ions are present
eE
Then x1 
m 2 0
eE
x2 
M 2 0
where M is the mass of the –ve ion

: 29 : ESE MAINS-2018
eE  1 1 
x1  x 2    
02  M m 
e2E  1 1 
and   ex 1  x 2   2   
0  M m 
 e2  1 1 
  2  
E 0  M m 
Thus the ionic polarizabiltiy i is inversely proportional to the square of the natural frequency
1
1 1
of the ionic molecule and to its reduced mass which is equal to   
M m
(iii) Orientation Polarization
In methane molecule (CH4). the centre of the negative and positive charges coincide, so that
there is no permanent dipole moment. On the other hand, in certain molecules such as CH 3Cl,
the positive and negative charges do not coincide. Since the electro negativity of chlorine is
more than that of hydrogen, the chlorine atom pulls the bonding electrons to itself more strongly
than hydrogen. Hence even in the absence of an electric field, this molecule carries a dipole
moment. When and electric field is applied on such molecules which posses permanent dipole
moment, the tend to align themselves in the direction of applied field. The polarization due to
such alignment is called orientation polarization and is dependent on temperature. With
increase of temperature, the thermal energy tends to randomize the alignment. Orientational
polarization can be shown to be

Po  N  N 2 / 3kT
= NoE
Therefore the orientational polarizability
P 2
o  o 
NE 3kT
Thus the orientational polarizability o is inversely proportional to absolute temperature of the
material.
(iv) Space-Charge polarization.

Space-charge polarization occurs due to the accumulation of charges at the electrodes or at
the interfaces in a multiphase material. The ions diffuse over appreciable distance in
response to the applied field, giving rise to redistribution of charges in the dielectric
medium.
Ptotal = Pe + Pi + Po +Ps
Since the space – charge polarizability is very small when compared to the other types of
polarizabilities, the total polarizability of a gas can be written as
2
 = e+i+o  4 0 R 3  2    
e2 1 1
 o  M m  3kT
Hence total polarization is given by
e2  1 1  2
P  NE  NE{4 o R 3  2    
 0  M m  3kT
: 30 : ESE MAINS-2018
06.(c) (i)
V  V  qV 
Sol: I  I P   exp1    I0 exp  [Empirical form]
 VP   VP   kT 
IP
Iv
V
0 VP VV
The negative differential resistance occurs between VP < V < VV. The corresponding voltage can
be obtained from the condition
d2I
 0 , by neglecting the second term in empirical form, we obtain
d2V
dI  I P I P V   V
   2  exp1  
dV  VP VP   VP 
d 2 I   2I P I P V   V 
2
  2  3  exp1    0
dV  VP VP   VP 
 V = 2VP = 20.1
= 0.2V
 10 2 10 2  0.2 
 exp1 
dI 0.2 
   
dV 0.2 V  0.1 0.1   0.1 
2
 0.0367
1
 dI 
R   
 dV 0.2 V 
 27.2

: 31 : ESE MAINS-2018
(ii)
Zener Breakdown A Avalanche Breakdown
1. Under very high reverse bias the depletion layer 1. Under reverse biased conditions the minority
width increases and the potential barrier also carrier passing through the junction acquire
increases resulting in very high electric field across kinetic energy which is directly proportional to
the junction. This high electric field will result in the reverse voltage. At sufficient high reverse
breakage of some of the covalent bonds of the voltage the kinetic energy of the minority
semiconductor atoms, leading to a large number of carriers becomes so large they dislodge
free minority charge carriers which result in sudden electrons from the covalent bonds of the
increase in the reverse current. The effect is called semiconductor. Due to this collisions, the free
Zener effect and the breakdown due to this Zener electrons in turn lead to the dislodging of more
effect is known as Zener breakdown. electrons and due to this the current becomes so
large that it leads to the breakdown of
semiconductor material itself. This is known as
Avalanche effect.
2. Breakdown of diode junctions by Zener effect occur 2. Breakdown of diode junctions by Avalanche
at a voltage less than 6V. effect occur at a voltage more than 6V.
07. (a)
Sol: The solutions in which molecules of nanometer are dispersed appear clear. The colloids in which
molecules of size ranging from 20nm to 10 nm appear milky. A colloid suspended in a liquid is
called as sol. A suspension that keeps its shape is called gel. Thus sol-gels are suspensions of
colloids in liquids that keep their shape. Sol-gel formation occurs in different stages.
The sol-gel process can be characterized by a series of distinct steps.
Step 1: Formation of different stable solutions of the alkoxide or solvated metal precursor (the
sol)
Step 2: Gelation resulting from the formation of an oxide-or alcohol-bridged net-work (the gel)
by a polycondensation or polyesterification reaction. This results in a dramatic increase
in the viscosity of solution.
Step 3: Aging of the (Syneresis), during which the polycondensation reactions continue until the
gel transforms into a sold mass. This is accompanied by contraction of the gel network
and expulsion of solvent from gel pores.
Step 4: Drying of the gel, when water and other volatile liquids are removed from the gel
network. If isolated by thermal evaporation, the resulting monolith is termed a xerogel.
If the solvent (such as water) is extracted under supercritical or near super critical
conditions, the product is an aerogel.

: 32 : ESE MAINS-2018
Step 5: Dehydration, during which surface-bound M-OH groups are removed. This is normally
achieved by calcining the monolith at temperatures up to 800 oC.
Step 6: Densification and decomposition of the gels at high temperatures (T > 800 oC). The
pores of the gel network are collapsed, and remaining organic species are volatilized.
Diagrm
(dissolve)
(Dehydration ( Rapid
Reaction) Drying)
Precursor Aerogal
Surfactant
Spinning GEL Organic
Dipping Suspension
Xerogel
Carbine Carbine
Carbine
Powder
Thin Film Coating
Dense Ceramic
The typical steps that are involved in sol-gel processing are shown in Figure above. By different
process one can get either nano film coating or nano powder or dense ceramic with naograins.
This method has the following advantages.
(i) The possibility of synthesizing non-metallic inorganic materials like glasses, glass ceramics or
ceramic materials at very low temperatures.
(ii) One can get monozed nanoparticles.
The disadvantages of this method are:
(i) Controlling the growth of the particles is difficult
(ii) Stopping the newly formed particles from agglomeration is also difficult.
Nano-particles prepared by sol-gel method are Si(OR)3 where R is alkyl groups of various types.
07. (b) (i)

Sol: Injected carriers diffuse from one side to other
I total = I electrons + I holes
  AqD n
dn   dp 
    AqD p 
 dx   dx 
   5  10  16
  2  1016  
 Aq D n  4      Aq  D p  2  10 4  
  2  10     
–6 –6
= –13.6 10 –1.9210
= –15.52 A

: 33 : ESE MAINS-2018
07. (b) (ii)

ND 1016
Sol: n 
 E EF 
 D  1  e 0.135
1 e  kT 
= 5.331015 cm–3
The neutral donor density N 0D = 1016 – 5.331015 = 4.671015 cm–3

N 0D 4.67
The ratio of    0.876
N D 5.33
07. (c) (i)

Sol: The given circuit can be re drawn as
4
j10 j5 +
2035 V + I2 5 V0
– I1 – –
j12 +
– + jI1
For loop 1, KVL gives

2035 – (4+j10)I1 – jI2 = 0
 (4+j10) I1 + jI2 = 2035---------(1)
For loop 2, KVL gives
–jI1 –j5I2 –5I2 = 0
 jI1 + (5+j5) I2 = 0 ---------(2)
From equation (2) we get
I1 = j(5+j5)I2
 I1 = (–5+j5)I2 -------(3)
Substitute equation.3 in equation.1 we get
(4+j10) (–5+j5)I2 + jI2 = 2035
 I2 [(4+j10) (–5+j5)+j] = 20 35
2035o
 I2 
4  j10 5  j5  j
 I2 = 0.264 –167.50 A
 V0 = 5I2
: 34 : ESE MAINS-2018
= 5  0.264 –167.5
 V0 = 1.32 –167.5 Volts
07. (c) (ii)

Sol: Let the equivalent  network be represented by below figure.
Y3
a b
Y1 Y2
c d
Given that
I1 = 5V1 – V2 ……..(1)
I2 = – V1 + V2 ……..(2)
Standard y-parameter is
I1 = Y11V1 + Y12V2 …….(3)
I2 = Y21 V1 + Y22V2 …….(4)
By comparing these equation we get

Y11 = 5 mhos, Y12 = Y21 = –1 mho, Y22 = 1 mho
Here
I1
Y11   Y1  Y3  5 …….(5)
V1 V 0
2
I2
Y22   Y2  Y3  1 ………..(6)
V2 V1  0
I1
Y12   Y3  1mho
V2 V1 0
I2
Y21   Y3  1mho
V1 V 0
2
So solving above equations we get

Y3 = 1 mho, Y1 = 4 mho Y2 = 0 mho
a Y3 = 1 ℧
I1 b I2
+ +
Y1 = 4 ℧ Y2 = 0 ℧
V1
V2
– –
c d

: 35 : ESE MAINS-2018
08.(a)
Sol: The given impedance function
20s  1  j10 (s  1  j10)
Zs  
s
=

20 (s  1)  10 2
2

s
Z(s) =

20 s  2s  101
2

s
(i) Resonant frequency (0)
20 j0   2 j0  101
2
Z(j0) =
j0
 20
  2
0  j20  101 
j 0
  2  101 
Z(j) = 202  j 0   .........(1)
  0  
At resonance frequency
Im[Z(j)] = 0
02  101
0
0
0 = 101 rad/sec = 10.05 rad/sec
(ii) Q-factor
Z(s) =

20 s 2  2s  101 
s
 101 
= 20 s  2  
 s 
2020
Z(s) = 40  20s 
s
In series resonant circuit the R, L, C values are
R = 40
L = 20H
1
C=  0.5 mF
2020
0 L 10.05  20
Q =
R 40
Q = 5.025

: 36 : ESE MAINS-2018
(iii) Band width

0 10.05
2 – 1 = = =2
Q 5.025
(iv) Impedance under resonance condition, Im[Z(s)] = 0

From equation (1)
  02  101  
Z[j] = 20  2  j    = 40
  0  
08.(b) (i)
Sol: Electrostatic potential in semiconductor 1 and 2 respectively are Vb1 and Vb2 and is given by
 N V  V 
Vb1  2 2 bi
1 N1   2 N 2
Vb1 

13  3 1019 1.6 
 
12 11016  13 3 1019 
Vb1 = 1.6V
 N V  V 
Vb 2  1 1 bi
1 N1   2 N 2
Vb 2 

12  11016 1.6 
  
12 11016  13 3 1019 
= 4.910–4 V
The depletion widths x1 & x2 can be obtained by
21 2 N 2 Vbi  V 
x1 
qN1 1 N1   2 N 2 
21 2 N1 Vbi  V 
x2 
qN 2 1 N1   2 N 2 
Substituting given values we get
x1 = 4.60810–5 cm
x2 = 1.53610–8 cm
Comment: We see that most of the built in potential is in the semiconductor with the lower
doping concentration and the depletion width is also much wider in it.

: 37 : ESE MAINS-2018
08.(b) (ii)
1/ 2
 2qVR  N A N D 
Sol: E max   
 s  N A  N D 
1/ 2
 2  1.6  10 19  30  1018 N D 
4  10  
5
 18
14 

 11.9  8.85  10  10  N D 
ND
1.7551016 =
ND
1  18
10
ND = 1.7551016 cm–3
08.(c) (i)
Sol: A network is termed to be reciprocal if the ratio of the response variable to the excitation variable
remains identical even if the position of the response and excitation in the network are
interchanged.
A two port network is said to be symmetrical if the input and output ports can be inter changed
without altering the port voltages and currents.
08.(c) (ii)
1 1 
Sol: Z =  
1 1 
V1 = I1 + I2 ……. (1)
V2 = I1 + I2 …….(2)
Transmission parameters is given by
V1 = AV2  BI2
I1 = CV2  DI2
V V1
A= 1 B=
V2 I 0 I 2 V 0
2 2
I1  I1
C= D=
V2 I2 0
I2 V2 0
From (1), (2) when I2 = 0

V1
V1 = I1, V2 = I1  1  A = 1
V2
I1
1  C = 1
V2
When V2 = 0
V1 I
B= ,D= 1
I2 I2
: 38 : ESE MAINS-2018
From (1), (2)

0 = I1 + I2
 I1 = I2
V1 = I1 + I2
V1 = 0
B = 0, D = 1
 A B  1 0 
   
 C D  1 1 
For cascading of two similar networks, resultant transmission parameters
 A B  1 0  1 0   1 0 
 C D   1 1  1 1  =  2 1 
      
By drawing network diagram for this
I1 I2
+ +
1
Z Ω
V1 2 V2
– –
Fig
1 1 
2  
2 
Z= 
1 1 
  
2 2 

: 39 : ESE MAINS-2018

EC Test-7 Sol

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For maximum power transfer

01. (c). (ii)

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Substitute the value of V1(s) in above equation

 h - parameters of the network:

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01. (e) (i)

Super Super Vortex

02. (a) (i)

(a) Circuit for explaining (b) Equivalent circuit using

02. (a) (ii)

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02. (b) (i)

Similarly we obtain built in potential for the base collector junction

Therefore the neutral base width is

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02. (c) (i)

02. (c) (ii)

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03. (a) (i)

Representing (1) & (2) in matrix form

03. (a) (ii)

When switch is moved to position (2)

Properties of antiferromagnetic materials

03. (b) (ii)

03. (b) (iii)

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03. (c) (i)

 J11  J11  I1  V1 

60V 2 25A 8 VAB

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Source transformation is used successively as shown in Fig. (2) to (9)

From Fig. (9), applying voltage division rule

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0 Equilibrium Spacing r0 Interatomic

Valence band Conduction band

Conduction band Conduction band

Valence band Valence band

Diamond (insulator) Silicon (semiconductor)

04. (a) (ii)

The equivalent circuit is now a shown in figure (b).

In the time domain,

By current division rule,

04. (c) (i)

The mean free path is given by

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05. (a) (i)

05. (b) (i)

05. (b) (ii)

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05. (d) (ii)

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Conductivity and Current Density of a Metal:

 VR2  VL2 = 136 V

 VR2  VL2 = (136)2 …… (2)

Impedance of the circuit is

So, V1 = V = VR  VR L  jVL = 220V

 VR2  VR2  VL2  2VR VR L = (220)2 …(3)

By substituting equations (1) & (2) in (3)

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