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TO 4Q Triac
12 June 2014 Product data sheet
1. General description
Planar passivated sensitive gate four quadrant triac in a SOT78 plastic package intended
for use in general purpose bidirectional switching and phase control applications. This
sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers,
logic integrated circuits and other low power gate trigger circuits.
3. Applications
• General purpose motor control
• General purpose switching
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 102 °C; Fig. 1; - - 8 A
Fig. 2; Fig. 3
Static characteristics
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; - 2.5 10 mA
Tj = 25 °C; Fig. 7
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NXP Semiconductors BT137-600E
4Q Triac
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T1 main terminal 1 mb
T2 T1
2 T2 main terminal 2 G
sym051
3 G gate
mb T2 mounting base; main
terminal 2
1 2 3
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BT137-600E TO-220AB plastic single-ended package; heatsink mounted; 1 mounting SOT78
hole; 3-lead TO-220AB
BT137-600E/DG TO-220AB plastic single-ended package; heatsink mounted; 1 mounting SOT78
hole; 3-lead TO-220AB
BT137-600E/L01 TO-220AB plastic single-ended package; heatsink mounted; 1 mounting SOT78
hole; 3-lead TO-220AB
7. Marking
Table 4. Marking codes
Type number Marking code
BT137-600E
BT137-600E/DG BT137-600E/DG
BT137-600E/L01
BT137-600E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage - 600 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 102 °C; Fig. 1; - 8 A
Fig. 2; Fig. 3
ITSM non-repetitive peak on-state full sine wave; Tj(init) = 25 °C; - 65 A
current tp = 20 ms; Fig. 4; Fig. 5
dIT/dt rate of rise of on-state current IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; - 50 A/µs
T2+ G+
IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; - 50 A/µs
T2+ G-
IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; - 50 A/µs
T2- G-
IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; - 10 A/µs
T2- G+
IGM peak gate current - 2 A
BT137-600E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
003aae689 003aae692
10 25
IT(RMS) IT(RMS)
(A) (A)
8 20
6 15
4 10
2 5
0 0
- 50 0 50 100 150 10- 2 10- 1 1 10
Tmb (°C) surge duration (s)
0
0 2 4 6 8 10
IT(RMS) (A)
α = conduction angle
a = form factor = IT(RMS)/IT(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
BT137-600E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
003aae691
103
ITSM IT ITSM
(A)
t
tp
Tj(init) = 25 °C max
102
(1)
(2)
10
10- 5 10- 4 10- 3 10- 2 10- 1
tp (s)
tp ≤ 20 ms
(1) dIT/dt limit
(2) T2- G+ quadrant limit
Fig. 4. Non-repetitive peak on-state current as a function of pulse width; maximum values
003aae693
80
ITSM
(A)
60
40
IT ITSM
20
t
1/f
Tj(init) = 25 °C max
0
1 10 102 103 104
number of cycles
f = 50 Hz
Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT137-600E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance half cycle; Fig. 6 - - 2.4 K/W
from junction to full cycle; Fig. 6 - - 2 K/W
mounting base
Rth(j-a) thermal resistance in free air - 60 - K/W
from junction to
ambient
003aae698
10
Zth(j-mb)
(K/W)
1
unidirectional
bidirectional
10-1
10-2
10-5 10-4 10-3 10-2 10-1 1 10
tp (s)
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width
BT137-600E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; - 2.5 10 mA
Tj = 25 °C; Fig. 7
Dynamic characteristics
dVD/dt rate of rise of off-state VDM = 402 V; Tj = 125 °C; (VDM = 67% - 50 - V/µs
voltage of VDRM); exponential waveform; gate
open circuit
tgt gate-controlled turn-on ITM = 12 A; VD = 600 V; IG = 0.1 A; dIG/ - 2 - µs
time dt = 5 A/µs
BT137-600E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
003aae809 003aae697
3 3
IGT IL
IGT (25 °C) IL(25°C)
(1)
(2)
2 2
(3)
(4)
(1)
(2)
(3)
1 1
(4)
0 0
- 60 - 10 40 90 140 - 60 - 10 40 90 140
Tj (°C) Tj (°C)
1.0
10
0.5
(1) (2) (3)
0 0
- 60 - 10 40 90 140 0 1 2 3
Tj (°C) VT (V)
BT137-600E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
003aae694
1.6
VGT
VGT (25°C)
1.2
0.8
0.4
0
- 60 - 10 40 90 140
Tj (°C)
BT137-600E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
E A
p A1
q mounting
D1 base
L1(1) L2(1)
Q
b1(2)
L (3×)
b2(2)
(2×)
1 2 3
b(3×) c
e e
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
L2(1)
UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) p q Q
max.
4.7 1.40 0.9 1.6 1.3 0.7 16.0 6.6 10.3 15.0 3.30 3.8 3.0 2.6
mm 2.54 3.0
4.1 1.25 0.6 1.0 1.0 0.4 15.2 5.9 9.7 12.8 2.79 3.5 2.7 2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
BT137-600E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
12.1 Data sheet status Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
Document Product Definition customer for the products described herein shall be limited in accordance
status [1][2] status [3] with the Terms and conditions of commercial sale of NXP Semiconductors.
Objective Development This document contains data from Right to make changes — NXP Semiconductors reserves the right to
[short] data the objective specification for product make changes to information published in this document, including without
sheet development. limitation specifications and product descriptions, at any time and without
Preliminary Qualification This document contains data from the notice. This document supersedes and replaces all information supplied prior
[short] data preliminary specification. to the publication hereof.
sheet
Suitability for use — NXP Semiconductors products are not designed,
Product Production This document contains the product authorized or warranted to be suitable for use in life support, life-critical or
[short] data specification. safety-critical systems or equipment, nor in applications where failure or
sheet malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
[1] Please consult the most recently issued document before initiating or damage. NXP Semiconductors and its suppliers accept no liability for
completing a design. inclusion and/or use of NXP Semiconductors products in such equipment or
[2] The term 'short data sheet' is explained in section "Definitions". applications and therefore such inclusion and/or use is at the customer’s own
[3] The product status of device(s) described in this document may have risk.
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on Quick reference data — The Quick reference data is an extract of the
the Internet at URL http://www.nxp.com. product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Product specification — The information and data provided in a Product Limiting values — Stress above one or more limiting values (as defined in
data sheet shall define the specification of the product as agreed between the Absolute Maximum Ratings System of IEC 60134) will cause permanent
NXP Semiconductors and its customer, unless NXP Semiconductors and damage to the device. Limiting values are stress ratings only and (proper)
customer have explicitly agreed otherwise in writing. In no event however, operation of the device at these or any other conditions above those
shall an agreement be valid in which the NXP Semiconductors product given in the Recommended operating conditions section (if present) or the
is deemed to offer functions and qualities beyond those described in the Characteristics sections of this document is not warranted. Constant or
Product data sheet. repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
BT137-600E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
BT137-600E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
13. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Ordering information ............................................. 2
7 Marking ................................................................... 2
8 Limiting values .......................................................3
9 Thermal characteristics .........................................6
10 Characteristics ....................................................... 7
11 Package outline ................................................... 10
12 Legal information .................................................11
12.1 Data sheet status ............................................... 11
12.2 Definitions ...........................................................11
12.3 Disclaimers .........................................................11
12.4 Trademarks ........................................................ 12
BT137-600E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Authorized Distributor
NXP:
BT137-600E/L01,127 BT137-600E,127 BT137-600E/DG