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SOT23
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D
D
G G
S
S
G S
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 70 90 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 100 125 °C/W
Maximum Junction-to-Lead Steady-State RθJL 63 80 °C/W
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
40 15
10V 3V
35 VDS=5V
4.5V 12
30
25 2.5V 9
ID (A)
ID(A)
20
15 6
125°C 25°C
10
VGS=2V 3
5
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)
30 1.8
VGS=4.5V
Normalized On-Resistance
Id=5A
1.6
25
VGS=4.5V
Ω)
RDS(ON) (mΩ
1.4
17
20
VGS=10V5
1.2 Id=5.8A2
15
10
VGS=10V
1
10 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
50 1.0E+01
ID=5.8A
1.0E+00
40 40
1.0E-01
Ω)
RDS(ON) (mΩ
125°C
IS (A)
125°C
30 1.0E-02
25°C
1.0E-03
20
1.0E-04
25°C
10 1.0E-05
0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)
5 1000
VDS=15V
ID=5.8A
4 800
Ciss
Capacitance (pF)
VGS (Volts)
3 600
2 400
Coss
1 200
Crss
0 0
0 2 4 6 8 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100.0 1000
TA=25°C
10.0 10µs
RDS(ON) 100
Power (W)
limited 100µs
ID (Amps)
1.0 1ms
10ms 10
0.1 TJ(Max)=150°C
TA=25°C 10s
DC
1
0.0
0.00001 0.001 0.1 10 1000
0.01 0.1 1 10 100
VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note F)
Operating Area (Note F)
10
D=Ton/T In descending order
Zθ JA Normalized Transient
1 RθJA=125°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
DUT -
Vgs
Ig
Charge
90 %
DUT
+ Vdd
Vgs VDC
Rg - 1 0%
Vgs V gs t d (o n ) tr t d (o ff) tf
to n t o ff
V ds + Q rr = - Idt
DUT
V gs
t rr
V ds - L Isd IF
Isd dI/dt
+ V dd
I RM
V gs VD C
V dd
Ig
- V ds