2SK3565

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)

2SK3565
Switching Regulator Applications
Unit: mm

• Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.)

• High forward transfer admittance: |Yfs| = 4.5 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 720 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 900 V

Drain-gate voltage (RGS = 20 kΩ) VDGR 900 V
Gate-source voltage VGSS ±30 V
1: Gate
DC (Note 1) ID 5 2: Drain
Drain current Pulse (t = 1 ms) A 3: Source
IDP 15
(Note 1)
Drain power dissipation (Tc = 25°C) PD 45 W JEDEC ―
Single pulse avalanche energy
EAS 595 mJ JEITA SC-67
(Note 2)
TOSHIBA 2-10U1B
Avalanche current IAR 5 A
Repetitive avalanche energy (Note 3) EAR 4.5 mJ Weight : 1.7 g (typ.)

Channel temperature Tch 150 °C

Storage temperature range Tstg -55~150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
2
Characteristics Symbol Max Unit

Thermal resistance, channel to case Rth (ch-c) 2.78 °C/W

Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W

Note 1: Ensure that the channel temperature does not exceed 150℃. 1

Note 2: VDD = 90 V, Tch = 25°C(Initial), L = 43.6 mH, IAR = 5.0 A, RG = 25 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution. 3

Start of commercial production

2002-06
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Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA

Gate-source breakdown voltage V (BR) GSS IG =±10 μA, VDS = 0 V ±30 ⎯ ⎯ V
Drain cut-off current IDSS VDS = 720 V, VGS = 0 V ⎯ ⎯ 100 μA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 900 ⎯ ⎯ V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V
Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 3 A ⎯ 2.0 2.5 Ω
Forward transfer admittance ⎪Yfs⎪ VDS = 20 V, ID = 3 A 2.0 4.5 ⎯ S
Input capacitance Ciss ⎯ 1150 ⎯
Reverse transfer capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 20 ⎯ pF

Output capacitance Coss ⎯ 100 ⎯

10 V ID = 3 A VOUT
Rise time tr VGS ⎯ 30 ⎯
0V
Turn-on time ton RL = ⎯ 70 ⎯
50 Ω
Switching time 66.7 Ω ns
Fall time tf ⎯ 60 ⎯
VDD ∼
− 200 V

Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 170 ⎯

Total gate charge Qg ⎯ 28 ⎯

Gate-source charge Qgs VDD ∼
− 400 V, VGS = 10 V, ID = 5 A ⎯ 17 ⎯ nC

Gate-drain charge Qgd ⎯ 11 ⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 5 A

Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 15 A

Forward voltage (diode) VDSF IDR = 5 A, VGS = 0 V ⎯ ⎯ −1.7 V
Reverse recovery time trr IDR = 5 A, VGS = 0 V, ⎯ 900 ⎯ ns
Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 5.4 ⎯ μC

Marking

Note 4: A line under a Lot No. identifies the indication of product

Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to

K3565 Part No. (or abbreviation code) environmental matters such as the RoHS compatibility of Product.
Lot No. The RoHS is the Directive 2011/65/EU of the European Parliament
and of the Council of 8 June 2011 on the restriction of the use of
Note 4 certain hazardous substances in electrical and electronic equipment.

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ID – VDS ID – VDS
5 6
COMMON 8 5.5 COMMON
SOURCE 6 SOURCE 10 8
5.25 6
Tc = 25°C 10 5 Tc = 25°C

(A)
(A)

4 5.5
PULSE TEST PULSE TEST
5.25

DRAIN CURRENT ID
DRAIN CURRENT ID

4
3
5
3

2 5

4.75 2
4.75

1
VGS = 4.5 V 1 VGS = 4 .5V

0 0
0 4 8 12 16 20 24 0 10 20 30

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)

ID – VGS VDS – VGS

10 20
VDS (V)

COMMON SOURCE
COMMON SOURCE
Tc = 25℃
VDS = 20 V
(A)

8 14 PULSE TEST
PULSE TEST
DRAIN CURRENT ID

DRAIN-SOURCE VOLTAGE

6 12 ID = 5 A

4 8 3

Tc = −55°C
100 4 1.5
2
25

0 0
0 2 4 6 8 10 0 4 8 12 16 20

GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V)

⎪Yfs⎪ – ID RDS (ON) – ID

10 10
FORWARD TRANSFER ADMITTANCE

COMMON SOURCE
DRAIN-SOURCE ON RESISTANCE

Tc = −55°C Tc = 25°C
PULSE TEST
25
5
RDS (ON) (Ω)

100
⎪Yfs⎪ (S)

1
3 VGS = 10 V､15V

COMMON SOURCE
VDS = 20 V
PULSE TEST
0.1 1
0.1 1 10 0.01 0.1 1 10

DRAIN CURRENT ID (A) DRAIN CURRENT ID (A)

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RDS (ON) – Tc IDR – VDS

10 10
COMMON SOURCE COMMON SOURCE
DRAIN-SOURCE ON RESISTANCE

PULSE TEST Tc = 25°C

5

DRAIN REVERSE CURRENT

8 PULSE TEST
3
RDS (ON) ( Ω)

IDR (A)
ID = 5A
1

4 3
0.5
VGS = 10 V 1.5
0.3
2 10
1

VGS = 0, −1 V
3
0 0.1
−80 −40 0 40 80 120 160 0 −0.4 −0.8 −1.2 −1.6

CASE TEMPERATURE Tc (°C) DRAIN-SOURCE VOLTAGE VDS (V)

CAPACITANCE – VDS Vth – Tc

10000 5
GATE THRESHOLD VOLTAGE

Ciss 4
(pF)

1000
C

3
CAPACITANCE

Vth (V)

Coss

2
100
COMMON SOURCE
COMMON SOURCE
1 VDS = 10 V
VGS = 0 V
Crss
ID = 1 mA
f = 1 MHz
Tc = 25°C PULSE TEST
10 0
0.1 1 3 5 10 30 50 100 −80 −40 0 40 80 120 160

DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (°C)

DYNAMIC INPUT / OUTPUT

PD – Tc CHARACTERISTICS
100 500 20
VDS (V)

(V)
DRAIN POWER DISSIPATION

VGS

80 400 16
VDS
VDD = 100 V
DRAIN-SOURCE VOLTAGE

GATE-SOURCE VOLTAGE

60 300 12
PD (W)

400

VGS 200
40 200 8
COMMON SOURCE
ID = 5 A
20 100 4
Tc = 25°C
PULSE TEST

0 0 0
0 40 80 120 160 200 0 10 20 30 40

CASE TEMPERATURE Tc (°C) TOTAL GATE CHARGE Qg (nC)

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rth – tw
10
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)

1 Duty=0.5

0.2

0.1
0.1
0.05
0.02 PDM

t
SINGLE PULSE
0.01
T
0.01
Duty = t/T
Rth (ch-c) = 2.78°C/W
1.25°C/W
0.001
10μ 100μ 1ｍ 10ｍ 100ｍ 1 10

PULSE WIDTH tw (s)

SAFE OPERATING AREA EAS – Tch

100 1000

ID max (PULSED) *
800
AVALANCHE ENERGY

10 100 μs *
ID max (CONTINUOUS) *
(A)

EAS (mJ)

600
1 ms *
DRAIN CURRENT ID

1 DC OPERATION
Tc = 25°C
400

0.1 ※ SINGLE NONREPETITIVE PULSE 200

Tc=25℃
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE. VDSS max 0
0.01 25 50 75 100 125 150
1 10 100 1000 10000
CHANNEL TEMPERATURE (INITIAL)
ドレイン･ソース間電圧 VDS (V) Tch (°C)

BVDSS
15 V
−15 V IAR

VDD VDS

TEST CIRCUIT WAVE FORM

RG = 25 Ω 1 ⎛ B VDSS ⎞
Ε AS = ⋅ L ⋅ I2 ⋅ ⎜ ⎟
VDD = 90 V, L = 43.6mH 2 ⎜B − V ⎟
⎝ VDSS DD ⎠

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RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.

• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.

• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.

• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
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• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.

• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.

• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

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