DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ448
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE

DESCRIPTION
The 2SJ448 is P-Channel MOS Field Effect Transistor de- PACKAGE DIMENSIONS
signed for high voltage switching applications. (in millimeters)

10.0 ±0.3 4.5 ±0.2

FEATURES 3.2 ±0.2
2.7 ±0.2
• Low On-Resistance
RDS(on) = 2.0 Ω MAX. (@ VGS = –10 V, ID = –2.0 A)
• Low Ciss Ciss = 470 pF TYP.

15.0 ±0.3

3 ±0.1

12.0 ±0.2
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings
• Isolated TO-220 Package

4 ±0.2
13.5 MIN.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSS –250 V
Gate to Source Voltage VGSS m25 V
0.7 ±0.1 1.3 ±0.2 2.5 ±0.1
Drain Current (DC) ID(DC) m4.0 A
1.5 ±0.2 0.65 ±0.1
Drain Current (pulse)* ID(pulse) m16 A 2.54 2.54
Total Power Dissipation (Tc = 25 ˚C) PT1 30 W
1. Gate
Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W 2. Drain
Channel Temperature Tch 150 ˚C 3. Source
Storage Temperature Tstg –55 to +150 ˚C 1 2 3
Single Avalanche Current** IAS –4.0 A
Single Avalanche Energy** EAS 80 mJ MP-45F(ISOLATED TO-220)
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
Drain
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = –20 V → 0

Body
Gate Diode

Gate Protection
Diode Source

Document No. D10029EJ1V0DS00

Date Published May 1995 P
Printed in Japan
© 1995
 2SJ448

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

Drain to Source On-Resistance RDS(on) 1.5 2.0 Ω VGS = –10 V, ID = –20 A

Gate to Source Cutoff Voltage VGS(off) –4.0 –4.8 –5.5 V VDS = –10 V, ID = –1 mA
Forward Transfer Admittance | yfs | 1.0 2.3 S VDS = –10 V, ID = –20 A
Drain Leakage Current IDSS –100 µA VDS = –250 V, VGS = 0

Gate to Source Leakage Current IGSS m10 µA VGS = m25 V, VDS = 0

Input Capacitance Ciss 470 pF VDS = –10 V
Output Capacitance Coss 200 pF VGS = 0

Reverse Transfer Capacitance Crss 70 pF f = 1 MHz

Turn-On Delay Time td(on) 13 ns ID = –2.0 A
Rise Time tr 7 ns VGS(on) = –10 V

Turn-Off Delay Time td(off) 34 ns VDD = –125 V

Fall Time tf 10 ns RG = 10 Ω

Total Gate Charge QG 15 nC ID = –4.0 A

Gate to Source Charge QGS 4 nC VDD = –200 V

Gate to Drain Charge QGD 9 nC VGS = –10 V
Body Diode Forward Voltage VF(S-D) 1.0 V IF = –4.0 A, VGS = 0

Reverse Recovery Time trr 195 ns IF = –4.0 A, VGS = 0

Reverse Recovery Charge Qrr 760 nC di/dt = 50 A/µs

Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time

D.U.T. D.U.T.
RL
VGS VGS 90 %
RG = 25 Ω L
Wave 010 %
VGS (on)
RG Form
PG
50 Ω VDD PG. RG = 10 Ω VDD
ID 90 %
VGS = –20 → 0 V 90 %
ID
VGS ID 10 % 10 %
IAS BVDSS Wave 0
0
VDS Form td (on) tr td (off) tf
ID t
VDD ton toff
t = 1µs
Duty Cycle ≤ 1 %
Starting Tch

Test Circuit 3 Gate Charge

D.U.T.
IG = –2 mA RL

PG.
50 Ω
VDD

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2
 2SJ448

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs.

SAFE OPERATING AREA CASE TEMPERATURE
35
dT - Percentage of Rated Power - %

PT - Total Power Dissipation - W

100 30

25
80
20
60
15
40
10

20 5

0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

TC - Case Temperature - ˚C TC - Case Temperature - ˚C

FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE
–100
Pulsed
–10
V) ID(pulse) VGS= –20 V
20
ID - Drain Current - A

ID - Drain Current - A
S
= PW –10 V
–10 V G
=
d( 10
ite ID(DC) 0
) Lim 1 s
µ

on m
S( Po 10 s –5
RD w m
er s
di DC
–1.0 ss
ip
at
io
n
Li
m
itt
TC = 25 ˚C ed
Single Pulse 0 –5 –10 –15 –20
–0.1
–1 –10 –100 –1000 VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V

FORWARD TRANSFER CHARACTERISTICS

–100
Pulsed
ID - Drain Current - A

–10
TA = –25 ˚C
25 ˚C
75 ˚C
–1.0 125 ˚C

–0.1

VDS = –10 V
0 –5 –10 –15
VGS - Gate to Source Voltage - V

3
 2SJ448

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1 000

rth(t) - Transient Thermal Resistance - ˚C/W

Rth(ch-a) = 62.5 ˚C/W
100

10

Rth(ch-c) = 4.17 ˚C/W

1

0.1

0.01
Single Pulse
0.001
10 µ 100 µ 1m 10 m 100 m 1 10 100 1 000

PW - Pulse Width - s

FORWARD TRANSFER ADMITTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT RDS(on) - Drain to Source On-State Resistance - Ω GATE TO SOURCE VOLTAGE
100 3.0
VDS = –10 V Pulsed
|yfs| - Forward Transfer Admittance - S

Pulsed
ID = –4 A
–2 A
–0.8 A
10 TA = –25 ˚C 2.0
25 ˚C
75 ˚C
125 ˚C

1.0 1.0

0.1
–0.1 –1.0 –10 –100 0 –5 –10 –15
ID - Drain Current - A VGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE GATE TO SOURCE CUTOFF VOLTAGE vs.

RDS(on) - Drain to Source On-State Resistance - Ω

RESISTANCE vs. DRAIN CURRENT CHANNEL TEMPERATURE

VGS(off) - Gate to Source Cutoff Voltage - V

6.0 Pulsed VDS = –10 V

–8.0 ID = –1 mA

4.0 –6.0

–4.0
VGS = –10 V
2.0
–2.0

0 0
–0.1 –1.0 –10 –50 0 50 100 150
ID - Drain Current - A Tch - Channel Temperature - ˚C

4
 2SJ448

DRAIN TO SOURCE ON-STATE RESISTANCE vs. SOURCE TO DRAIN DIODE

RDS(on) - Drain to Source On-State Resistance - Ω

CHANNEL TEMPERATURE FORWARD VOLTAGE

Pulsed
4.0 100

ISD - Diode Forward Current - A

3.0
10

2.0 VGS= –10 V VGS = 0 V

10 V
1

1.0
0.1
ID = –2 A
0
–50 0 50 100 150 0 0.5 1.0 1.5
Tch - Channel Temperature - ˚C VSD - Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE SWITCHING CHARACTERISTICS
1 000 VGS = 0 1 000

td(on), tr, td(off), tf - Switching Time - ns

Ciss f = 1 MHz
Ciss, Coss, Crss - Capacitance - pF

tr

100 100
Coss
tf
td(off)
Crss td(on)
10 10

VDD = –125 V
VGS = –10 V
1.0 1.0 RG = 10 Ω
–1.0 –10 –100 –1 000 –0.1 –1.0 –10 –100
VDS - Drain to Source Voltage - V ID - Drain Current - A

REVERSE RECOVERY TIME vs.

DRAIN CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS
10 000 –200 –16
di/dt = 50 A/µs
ID = –6 A
VGS = 0
VDS - Drain to Source Voltage - V
trr - Reverse Recovery time - ns

VGS - Gate to Source Voltage - V

VDD= –200 V –12
–125 V
1 000 –50 V

–100 –8

100
–4

10 0
0.1 1.0 10 100 0 4 8 12 16
ID - Drain Current - A Qg - Gate Charge - nC

5
 2SJ448

SINGLE AVALANCHE CURRENT vs. SINGLE AVALANCHE ENERGY

INDUCTIVE LOAD DERATING FACTOR
–100 160
VDD = –125 V
RG = 25 Ω
IAS - Single Avalanche Current - A

140
VGS = –20 V → 0

Energy Derating Factor - %

IAS <
= –4 A
120
–10
100
ID = –4 A
EAS 80
=8
0m
J
60
–1.0
40
VDD = –125 V
20
VGS = –20 V → 0
–0.1 RG = 25 Ω 0
100 µ 1m 10 m 100 m 25 50 75 100 125 150
L - Inductive Load - H Starting Tch - Starting Channel Temperature - ˚C

6
 2SJ448

REFERENCE

Document Name Document No.

NEC semiconductor device reliability/quality control system. TEI-1202

Quality grade on NEC semiconductor devices. IEI-1209

Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213

Guide to quality assurance for semiconductor devices. MEI-1202

Semiconductor selection guide. MF-1134
Power MOS FET features and application switching power supply. TEA-1034

Application circuits using Power MOS FET. TEA-1035

Safe operating area of Power MOS FET. TEA-1037

The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.

7
 2SJ448

[MEMO]

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11