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Multiple RS-232 Drivers & Receivers

Product Description Features


The GS75232 are monolithic device containing 3 „ Meets standard EIA-232-D(Revision of
independent drives and 5 receivers. RS-232-C)
„ Drivers
These are designed to interface between date
terminal equipment and date communication - Current Limited Output : 10 mA Typical
equipment as designed by EIA-232-D. - Power-off Output Impedance : 300 Ω Min
- Slew Rate Control by Load Capacitor
- Flexible Supply Voltage Range
- Input Compatible with Most TTL and DTL
Circuits
„ Receivers
- Input Resistance : 3 kΩ to 7 kΩ
- Input Signal Range : ± 30 V
- Built-in Input Hysteresis (Double Threshold)

Representative Schematic Diagram


VCC+

VCC
8K2 6K2
DA

70 300 9K 5K 2K

DY DY
2K

3K6
4K
DA
10K

10K
7K 70

VCC-

Resistor values shown are nominal

Driver Receiver

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Packages & Pin Assignments


Name Pin No Function
VCC+ VCC
+
VCC 1 Driver Section Supply +
RA1 RY1
DA1 16
DA2 15
DA3 13 Driver Input
RA2 RY2
Receiver Section
VCC 20
Supply
RA3 RY3
RA1 2
RA2 3
DY1 DA1 RA3 4 Receiver Input
RA4 7
DY2 DA2 RA5 9
-
VCC 10 Driver Section Supply -
RA4 RY4 DY1 5
DY2 6 Driver Output
DY3 DA3 DY3 8
GND 11 Ground
RA5 RY5 RY1 19
RY2 18
VCC - GND RY3 17 Receiver Output
RY4 14
GS75232 RY5 12

Ordering and Marking Information

GS P/N
Package Code

GS75232 P Device Package


GS75232SF SOIC-20
F YWL G
GS75232SSF SSOP-20
GS75232TSSF TSSOP-20
Lead Free GS Code
Date Code

Absolute Maximum Ratings

Parameter Symbol Rating Unit


Supply Voltage VCC+ 15 V
Supply Voltage VCC- -15 V
Supply Voltage VCC 10 V
Input Voltage VIN (Driver) -15 to +7 V
Input Voltage VIN (Receiver) ± 30 V
Output Voltage VOUT (Driver) -15 to +15 V
Continuous Power Dissipation (Below 25 oC) PD 1.0 W
o
Storage Temperature TSTG -65 to +175 C
o
Operating Temperature Top 0 to +75 C
ESD Rating ESD 1.5 KV

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Electrical Characteristics
Supply Current (VCC = 5V, TA = 25 OC)
Parameter Symbol Test Condition Min Max Unit
VCC+ = 9 V VIN = 1.9V 15
-
No Load VIN = 0.8V 4.5
VCC+ = 12 V VIN = 1.9V 19
Supply Current from VCC+ ICC+ - mA
No Load VIN = 0.8V 5.5
VCC+ = 15 V VIN = 1.9V 25
-
No Load VIN = 0.8V 9
VCC- = -9 V VIN = 1.9V -15
-
No Load VIN = 0.8V -3.2
VCC- = -12 V VIN = 1.9V -19
Supply Current from VCC- ICC- - mA
No Load VIN = 0.8V -3.2
VCC- = -15 V VIN = 1.9V -25
-
No Load VIN = 0.8V -3.2
Supply Current from VCC ICC VCC = 5 V VIN = 5.0V - 30 mA
Receiver Section
Parameter Symbol Test Conditions Min Max Unit
Positive-Going
VT+ 1.75 2.25 V
Threshold Voltage
Negative-Going
VT- 0.75 1.25 V
Threshold Voltage
VI= 0.75V, IOL=-0.5mA 2.6 5
High Level Output Voltage VOH V
Input Open, IOL = -0.5 mA 2.6 5
Low Level Output Voltage VOL VI= 3V, IOL = 10 mA - 0.45 V
VI= 25V 3.6 8.3
High-Level Input Current IIH mA
VI= 3V 0.43 -
VI= -25V -3.6 -8.3
Low-Level Input Current IIL mA
VI= -3V -0.43 -
Short-Circuit Output Current IOS -3 (tip) mA
Receiver Switching Characteristic (VCC= 5V)
Parameter Symbol Test Conditions Min Max Unit
Propagation Delay Time, CL = 15 ρF
TPLH - 150 ns
Low-To-High-Level Output RL = 3.9 kΩ
Propagation Delay Time, CL = 15 ρF
TPHL - 50 ns
High -To- Low -Level Output RL = 390 kΩ
Transition Time, CL = 15 ρF
TTLH - 175 ns
Low-To-High-Level Output RL = 3.9 kΩ
Transition Time, CL = 15 ρF
TTHL - 20 ns
High -To- Low -Level Output RL = 390 kΩ
Driver Section
Parameter Symbol Test Conditions Min Max Unit
High Level VCC+ = +9 V
VIH 1.9 - V
Input Voltage VCC- = -9 V
Low Level
VIL - 0.8 V
Input Voltage
VCC+ = 9 V
VIL = 6 - V
VCC- = -9 V
High Level Output Voltage VOH 0.8V
RL=3 kΩ VCC+ = 13.2 V
9 - V
VCC- = -13.2 V
VIH = VCC+ = 9 V
- -6
1.9V VCC- = -9 V
Low Level Output Voltage VOL V
RL=3 kΩ VCC+ = 13.2 V
- -9
VCC- = -13.2 V

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Electrical Characteristics (Continue)

Parameter Symbol Test Conditions Min Max Unit


High Level
IIH VI = 5V - 10 μA
Input Current
Low Level
IIL VI = 0 - -1.6 mA
Input Current
Short Circuit Output Current at VI = 0.8V
IOS(H) -6 -12 mA
High Level VO = 0
Short Circuit Output Current at VI = 1.9V
IOS(L) 6 12 mA
Low Level VO = 0
Output Resistance, VCC+ = 0, VCC- = 0
RO 300 - Ω
Power Off VO = -2V to 2V
Driver Switching Characteristic (VCC+ = 9V, VCC- = -9V TA = 25 OC)
Parameter Symbol Test Conditions Min Max Unit
Propagation Delay Time,
TPLH - 500 ns
Low-To-High-Level Output
Propagation Delay Time,
TPHL RL = 3 kΩ - 175 ns
High -To- Low -Level Output
CL = 15 μF
Transition Time,
TTLH (See Figure 1) - 100 ns
Low-To-High-Level Output *
Transition Time,
TTHL - 75 ns
High -To- Low -Level Output*
Transition Time,
TTLH RL = 3 kΩ to 7 kΩ 2.5 (tip) μs
Low-To-High-Level Output**
CL = 2500 ρF
Transition Time,
TTHL (See Figure 1) 3.0 (tip) μs
High-To-Low -Level Output**
*- Measured between 10 % and 90 % Points of Output Waveform
** - Measured between +3V and -3V Points on the Output Waveform (EIA-232-D Condition)
Receiver Section
Parameter Symbol Test Conditions Min Max Unit
Positive-Going
VT+ 1.75 2.25 V
Threshold Voltage
Negative-Going
VT- 0.75 1.25 V
Threshold Voltage
VI = 0.75V, IOL=-0.5mA 2.6 5
High Level Output Voltage VOH V
Input Open, IOL = -0.5 mA 2.6 5
Low Level Output Voltage VOL VI = 3V, IOL = 10 mA - 0.45 V
VI = 25V 3.6 8.3
High-Level Input Current IIH mA
VI = 3V 0.43 -
VI = -25V -3.6 -8.3
Low-Level Input Current IIL mA
VI = -3V -0.43 -
Short-Circuit Output Current IOS -3 (tip) mA
Receiver Switching Characteristic (VCC= 5V)
Parameter Symbol Test Conditions Min Max Unit
Propagation Delay Time, CL = 15 ρF
TPLH - 150 ns
Low-To-High-Level Output RL = 3.9 kΩ
Propagation Delay Time, CL = 15 ρF
TPHL - 50 ns
High -To- Low -Level Output RL = 390 kΩ
Transition Time, CL = 15 ρF
TTLH - 175 ns
Low-To-High-Level Output RL = 3.9 kΩ
Transition Time, CL = 15 ρF
TTHL - 20 ns
High -To- Low -Level Output RL = 390 kΩ

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Typical Applications
+5V +12V
UART

DCD

DSR

S IN

1
RTS 6
2
7
S OUT 3
8
4
CTS 9
5

DTR
RS-232
RI DB-9
Connector

SIO Card
-12V

Typical Performance Characteristics


10ns
DRIVER
3V
1.5V 1.5V
PULSE
GENERATOR INPUT 0V
OUTPUT
(See Note A) tPLH tPLH
OUTPUT VOH
RL CL
50% 50%
VOL

tTHL tTLH
Voltage Waveform

RECEIVER 10ns
90% 90%
3V
OUTPUT 50% 50%
10% 10%
INPUT 0V
RL
PULSE tPLH tPLH
GENERATOR OUTPUT VOH
(See Note A)
1.5V 1.5V
CL VOL

tTHL tTLH
Tw=20us, Voltage Waveform
Note A. The pulse generator has the following characteristics. f = 200 KHz, ZO = 50 Ω
B. C included probe and jig capacitance.
C. All diodes are 1N3064 or equivalent.

Fig1. Propagation and Transition Times

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Package Dimension

SOIC-20

D
θ1

θ2 R1
E/2
E1/2
+ R
GAUGE
PLANE
E1 E
L
θ L2
θ1 L1
PIN 1
MARKING
e b
h

c
A A2

A1

Dimensions
Millimeters
SYMBOL
MIN TYP MAX
A 2.35 - 2.65
A1 0.10 - 0.30
A2 2.05 - 2.55
b 0.31 - 0.51
b1 0.27 - 0.48
c 0.20 - 0.33
D - 12.80 -
E - 10.30 -
E1 - 7.50 -
e - 1.27 -
L 0.40 - 1.27
L1 - 1.40 -
L2 - 0.25 -
R 0.07 - -
R1 0.07 - -
h 0.25 - 0.75
θ 0° - 8°
θ1 5° - 15°
θ2 0° - -

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SSOP-20

D
θ1

E/2 θ2
E1/2 R1
E1 E + R
GAUGE
PLANE

L
PIN 1 θ L2
MARKING θ1 L1
e b

c
A A2

A1

Dimensions
Millimeters Inches
SYMBOL
MIN MAX MIN MAX
A 1.35 1.75 .053 .069
A1 0.10 0.25 .004 .010
A2 1.25 1.65 .049 .065
b 0.20 0.30 .008 .012
c 0.15 0.25 .006 .010
D 8.66 (TYP) .341 (TYP)
E 6.00 (TYP) .236 (TYP)
E1 3.90 (TYP) .154 (TYP)
e 0.64 (TYP) .025 (TYP)
L 0.40 1.27 .016 .050
L1 1.04 (TYP) .041 (TYP)
L2 0.25 (TYP) .010 (TYP)
R 0.07 - .003 -
R1 0.07 - .003 -
h 0.25 0.50 .010 .020
θ 0° 8° 0° 8°
θ1 5° 15° 5° 15°
θ2 0° - 0° -

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TSSOP-20

e
20 11

E/2 θ2
S
GAUGE
E1 E R1 PLANE
+ R

PIN 1 L
θ1 L2
MARKING L1
1 2 3 10 θ3
b
e/2

c
A A2

A1

Dimensions
Millimeters
SYMBOL
MIN TYP MAX
A - - 1.20
A1 0.05 - 0.15
A2 0.80 1.00 1.05
b 0.19 - 0.30
b1 0.19 0.22 0.25
c 0.09 - 0.20
D 6.40 6.50 6.60
E - 6.40 -
E1 4.30 4.40 4.50
e - 0.65 -
L 0.45 0.60 0.75
L1 - 1.00 -
R 0.09 - -
R1 0.09 - -
S 0.20 - -
θ1 0° - 8°
θ2 - 12° -
θ3 - 12° -

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NOTICE
Information furnished is believed to be accurate and reliable. However Globaltech Semiconductor assumes no
responsibility for the consequences of use of such information nor for any infringement of patents or other rights of
third parties, which may result from its use. No license is granted by implication or otherwise under any patent or
patent rights of Globaltech Semiconductor. Specifications mentioned in this publication are subject to change
without notice. This publication supersedes and replaces all information without express written approval of
Globaltech Semiconductor.
(Revise Date:2007/11/13 Version_1.0)

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