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CNY70

Vishay Semiconductors

Reflective Optical Sensor with Transistor Output

FEATURES
Marking area
• Package type: leaded
• Detector type: phototransistor
• Dimensions (L x W x H in mm): 7 x 7 x 6
E D • Peak operating distance: < 0.5 mm
• Operating range within > 20 % relative collector
current: 0 mm to 5 mm
21835
Top view
• Typical output current under test: IC = 1 mA
19158_1
• Emitter wavelength: 950 nm
• Daylight blocking filter
DESCRIPTION
• Lead (Pb)-free soldering released
The CNY70 is a reflective sensor that includes an infrared
emitter and phototransistor in a leaded package which • Compliant to RoHS directive 2002/95/EC and in
blocks visible light. accordance to WEEE 2002/96/EC

APPLICATIONS
• Optoelectronic scanning and switching devices i.e., index
sensing, coded disk scanning etc. (optoelectronic encoder
assemblies).

PRODUCT SUMMARY
DISTANCE FOR DISTANCE RANGE FOR TYPICAL OUTPUT DAYLIGHT
PART NUMBER MAXIMUM CTRrel (1) RELATIVE Iout > 20 % CURRENT UNDER TEST (2) BLOCKING FILTER
(mm) (mm) (mA) INTEGRATED
CNY70 0 0 to 5 1 Yes

Notes
(1) CTR: current transfere ratio, I /I
out in
(2) Conditions like in table basic charactristics/sensors

ORDERING INFORMATION
ORDERING CODE PACKAGING VOLUME (1) REMARKS
CNY70 Tube MOQ: 4000 pcs, 80 pcs/tube -

Note
(1)
MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS (1)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT


COUPLER
Total power dissipation Tamb ≤ 25 °C Ptot 200 mW
Ambient temperature range Tamb - 40 to + 85 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature Distance to case 2 mm, t ≤ 5 s Tsd 260 °C
INPUT (EMITTER)
Reverse voltage VR 5 V
Forward current IF 50 mA
Forward surge current tp ≤ 10 µs IFSM 3 A
Power dissipation Tamb ≤ 25 °C PV 100 mW
Junction temperature Tj 100 °C

Document Number: 83751 For technical questions, contact: sensorstechsupport@vishay.com www.vishay.com


Rev. 1.7, 17-Aug-09 1
CNY70
Vishay Semiconductors Reflective Optical Sensor with
Transistor Output

ABSOLUTE MAXIMUM RATINGS (1)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT


OUTPUT (DETECTOR)
Collector emitter voltage VCEO 32 V
Emitter collector voltage VECO 7 V
Collector current IC 50 mA
Power dissipation Tamb ≤ 25 °C PV 100 mW
Junction temperature Tj 100 °C
Note
(1) T
amb = 25 °C, unless otherwise specified

ABSOLUTE MAXIMUM RATINGS

300
P - Power Dissipation (mW)

Coupled device
200

Phototransistor
100
IR - diode

0
0 25 50 75 100
95 11071 Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation vs. Ambient Temperature

BASIC CHARACTERISTICS (1)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT


COUPLER
VCE = 5 V, IF = 20 mA,
Collector current IC (2) 0.3 1.0 mA
d = 0.3 mm (figure 1)
Cross talk current VCE = 5 V, IF = 20 mA, (figure 2) ICX (3) 600 nA
Collector emitter saturation IF = 20 mA, IC = 0.1 mA,
VCEsat (2) 0.3 V
voltage d = 0.3 mm (figure 1)
INPUT (EMITTER)
Forward voltage IF = 50 mA VF 1.25 1.6 V
Radiant intensity IF = 50 mA, tp = 20 ms Ie 7.5 mW/sr
Peak wavelength IF = 100 mA λP 940 nm
Virtual source diameter Method: 63 % encircled energy d 1.2 mm
OUTPUT (DETECTOR)
Collector emitter voltage IC = 1 mA VCEO 32 V
Emitter collector voltage IE = 100 µA VECO 5 V
Collector dark current VCE = 20 V, IF = 0 A, E = 0 lx ICEO 200 nA
Notes
(1) T
amb = 25 °C, unless otherwise specified
(2) Measured with the "Kodak neutral test card", white side with 90 % diffuse reflectance
(3) Measured without reflecting medium

www.vishay.com For technical questions, contact: sensorstechsupport@vishay.com Document Number: 83751


2 Rev. 1.7, 17-Aug-09
CNY70
Reflective Optical Sensor with Vishay Semiconductors
Transistor Output

Reflecting medium
(Kodak neutral test card)

~~
~
d ~
~~ Detector

Emitter

A C C E

95 10808

Fig. 2 - Pulse diagram

BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified

10
1000
Kodak neutral card
IC - Collector Current (mA)
(white side)
IF - Forward Current (mA)

1 d = 0.3 mm
100 VCE = 5 V

10 0.1

1 0.01

0.1 0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 10 100
96 11862 VF - Forward Voltage (V) 95 11065 I F - Forward Current (mA)
Fig. 3 - Forward Current vs. Forward Voltage Fig. 5 - Collector Current vs. Forward Current

1.5 10
CTR rel - Relative Current Transfer Ratio

Kodak neutral card


1.4 (white side) I F = 50 mA
VCE = 5 V
d = 0.3 mm
I C - Collector Current (mA)

1.3 I F = 20 mA
1 20 mA
1.2 d = 0.3 mm
10 mA
1.1
1.0 0.1 5 mA
0.9
2 mA
0.8
0.01
0.7 1 mA
0.6
0.5 0.001
- 30 - 20 -10 0 10 20 30 40 50 60 70 80 0.1 1 10 100
96 11913 Tamb - Ambient Temperature (°C) 95 11066 VCE - Collector Emitter Voltage (V)

Fig. 4 - Relative Current Transfer Ratio vs. Ambient Temperature Fig. 6 - Collector Current vs. Collector Emitter Voltage

Document Number: 83751 For technical questions, contact: sensorstechsupport@vishay.com www.vishay.com


Rev. 1.7, 17-Aug-09 3
CNY70
Vishay Semiconductors Reflective Optical Sensor with
Transistor Output

100 10
Kodak neutral card
CTR - Current Transfer Ratio (%)

(white side)

I C - Collector Current (mA)


d = 0.3 mm
V CE = 5 V
10 1
d

1 0.1

V CE = 5 V
I F = 20 mA

0.1 0.001
0.1 1 10 100 0 2 4 6 8 10
96 11914 I F - Forward Current (mA) 95 11069 d - Distance (mm)

Fig. 7 - Current Transfer Ratio vs. Forward Current Fig. 9 - Collector Current vs. Distance

0° 10° 20°
10
30°
Icrel - Relative Collector Current
CTR - Current Transfer Ratio (%)

I F = 50 mA I erel - Relative Radiant Intensity

40°
1 mA 1.0
20 mA
1 10 mA 0.9 50°
5 mA
2 mA
0.8 60°
Kodak neutral card
(white side)
70°
d = 0.3 mm 0.7
80°
0.1
0.1 1 10 100 0.6 0.4 0.2 0 0.2 0.4 0.6
96 12001 V CE - Collector Emitter Voltage (V) 95 11063

Fig. 8 - Current Transfer Ratio vs. Collector Emitter Voltage Fig. 10 - Relative Radiant Intensity/Collector Current vs.
Angular Displacement

1.0
I Crel - Relative Collector Current

0.9 0
1.5 s
0.8
d = 5 mm E D 5 mm
0.7 4 mm 10 mm
0.6 3 mm d
2 mm
0.5 0
1 mm E s
0.4 0 5 mm
0.3 D
10 mm
VCE = 5 V
0.2
I F = 20 mA
0.1
0.0
0 1 2 3 4 5 6 7 8 9 10 11
96 11915 s - Displacement (mm)
Fig. 11 - Relative Collector Current vs. Displacement

www.vishay.com For technical questions, contact: sensorstechsupport@vishay.com Document Number: 83751


4 Rev. 1.7, 17-Aug-09
CNY70
Reflective Optical Sensor with Vishay Semiconductors
Transistor Output

PACKAGE DIMENSIONS in millimeters

95 11345

TUBE DIMENSIONS in millimeters

20291

Document Number: 83751 For technical questions, contact: sensorstechsupport@vishay.com www.vishay.com


Rev. 1.7, 17-Aug-09 5
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Vishay

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All product specifications and data are subject to change without notice.

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or in any other disclosure relating to any product.

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therein, which apply to these products.

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The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000 www.vishay.com


Revision: 18-Jul-08 1