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2SB1260 / 2SB1181 / 2SB1241

Transistors

Power Transistor (−80V, −1A)


2SB1260 / 2SB1181 / 2SB1241

zFeatures zExternal dimensions (Unit : mm)


1) Hight breakdown voltage and high current. 2SB1260 2SB1181
BVCEO= −80V, IC = −1A 6.5±0.2 2.3+−0.2
0.1

1.5±0.3
C0.5
5.1+−0.2
2) Good hFE linearty. 4.5+0.2 0.1 0.5±0.1

0.5±0.1
−0.1
1.6±0.1 1.5 +0.2
−0.1
3) Low VCE(sat).

0.3
−0.1

9.5±0.5
0.9
5.5+
4) Complements the 2SD1898 / 2SD1863 /

1.5
4.0 ±0.3
2.5+0.2
−0.1

2.5
0.65±0.1
2SD1733. (1) (2) (3)
0.75
0.9
0.4+0.1
−0.05 0.55±0.1
1.0±0.2

0.4±0.1 0.5±0.1 0.4±0.1 2.3±0.2 2.3±0.2 1.0±0.2


1.5±0.1 1.5±0.1
3.0±0.2

(1) (2) (3)


zStructure (1) Base
ROHM : CPT3
(1) Base
ROHM : MPT3 Abbreviated (2) Collector (2) Collector
Epitaxial planar type EIAJ : SC-62 symbol: BE ∗ (3) Emitter
EIAJ : SC-63 (3) Emitter

PNP silicon transistor


2SB1241
6.8±0.2 2.5±0.2
4.4±0.2
0.9
1.0

0.65Max.
14.5±0.5

0.5±0.1

(1) (2) (3)

2.54 2.54
1.05 0.45±0.1

(1) Emitter
ROHM : ATV (2) Collector
(3) Base
∗ Denotes h FE

zAbsolute maximum ratings (Ta=25°C)


Parameter Symbol Limits Unit
Collector-base voltage VCBO −80 V
Collector-emitter voltage VCEO −80 V
Emitter-base voltage VEBO −5 V
IC −1 A (DC)
Collector current
ICP −2 ∗1 A (Pulse)
0.5
2SB1260
∗2
Collector power 2 W
PC
dissipation 2SB1241, 2SB1181 1 ∗3

2SB1181 10 W (Tc=25°C)
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to 150 °C
∗1 2SB1260 : Pw=20ms duty=1/2
2SB1241 : Single pulse, Pw=100ms
∗ 2 2SB1260 : When mounted on a 40×40×0.7 mm ceramic board.
∗ 3 2SB1241 : Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.

Rev.C 1/3
2SB1260 / 2SB1181 / 2SB1241
Transistors

zElectrical characteristics (Ta=25°C)


Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO −80 − − V IC= −50µA
Collector-emitter breakdown voltage BVCEO −80 − − V IC= −1mA
Emitter-base breakdown voltage BVEBO −5 − − V IE= −50µA
Collector cutoff current ICBO − − −1 µA VCB= −60V
Emitter cutoff current IEBO − − −1 µA VEB= −4V
Collector-emitter saturation voltage VCE(sat) − − −0.4 V IC/IB= −500mA/ −50mA
2SB1260, 2SB1181 82 − 390 −
DC current transfer ratio hFE VCE= −3V, IC= −0.1A
2SB1241 120 − 390 −
Transition frequency 2SB1181 fT − 100 − MHz VCE= −10V, IE=50mA, f=100MHz
2SB1260 − 20 − pF VCB= −10V
Output capacitance Cob IE=0A
2SB1181, 2SB1241 − 25 − pF f=1MHz

zPackaging specifications and hFE


Package Taping
Code TL TV2 T100
Basic ordering 2500 2500 1000
Type hFE unit (pieces)
2SB1260 PQR − −
2SB1241 QR − −
2SB1181 PQR − −

hFE values are classified as follows :


Item P Q R
hFE 82 to 180 120 to 270 180 to 390

zElectrical characteristic curves


−1000 1000
Ta=25°C Ta=25°C Ta=25°C
VCE= −5V −1.0
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (mA)

−4.5mA 500
DC CURRENT GAIN : hFE

−100 −0.8 −4mA


−3.5mA 200

−0.6 −3mA VCE= −3V


−10 100
−2.5mA
−0.4 −2mA 50 −1V
−1.5mA
−1
−0.2 −1mA
20
−0.5mA
IB=0mA
−0.1 0 10
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 −2000

BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA)

Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 DC current gain vs.
characteristics characteristics collector current

Rev.C 2/3
2SB1260 / 2SB1181 / 2SB1241
Transistors

1000

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)


1000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

Ta=25°C Ta=25°C Ta=25°C

TRANSITION FREQUENCY : fT (MHz)


500 VCE= −5V 500 f=1MHz
−2 IE=0A
200 200
−1
100 100
−0.5
50 50
−0.2
20 20
IC/IB=20
−0.1 10 10 10
−0.05
5 5

−0.02 2 2
−0.01 1 1
− 1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 1 2 5 10 20 50 100 200 500 1000 −0.1 -0.2 −0.5 -1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V)

Fig.4 Collector-emitter saturation Fig.5 Gain bandwidth product Fig.6 Collector output capacitance
voltage vs. collector current vs. emitter current vs. collector-base voltage

−10
EMITTER INPUT CAPACITANCE : Cib (pF)

1000 10
Ta=25°C Ta=25°C Ta=25°C
f=1MHz
IC Max.(Pulse)
∗Single
nonrepetitive
5
IC Max.(Pulse)
∗ Single
500 IC=0A nonrepetitive

COLLECTOR CURRENT : IC (A)


COLLECTOR CURRENT : IC (A)

pulse 2
IC Max. pulse

PW
DC
−1 1

=1
PW

PW

0m
=1

200 PW 500m

=1
0m

=1

s
0
00

0m
s

ms 200m

s
DC
100 −0.1 100m
50m
50
20m
−0.01 10m
20 5m
∗Printed circuit board:
1.7 mm thick with collector
2m 2
10 −0.001 1m copper plating at least 1 cm .
−0.1 −0.2 −0.5 −1 −2 −5 −10 −0.1 −1 −10 −100 0.1 0.2 0.5 1 2 5 10 20 50 100200 5001000
EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig. 7 Emitter input capacitance Fig.8 Safe operating area Fig.9 Safe operating area
vs. emitter-base voltage (2SB1260) (2SB1241)

−5
Ta=25°C

−2
∗ Single
nonrepetitive
COLLECTOR CURRENT : IC (A)

pulse
−1
PW

−0.5
=1
00
ms

−0.2

−0.1

−0.05

−0.02

−0.01
−0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.10 Safe operating area


(2SB1181)

Rev.C 3/3
Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan


Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1

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