INDIABIX (MCQs Elecs)

SEMICONDUCTORS 5.
As the forward current through a silicon diode

increases, the internal resistance
1. A silicon diode measures a low value of resistance A. increases.
with the meter leads in both positions. The trouble, if
any, is B. decreases.
A. the diode is open.
C. remains the same.
B. the diode is shorted to ground. Answer: Option B
C. the diode is internally shorted. 6. The movement of free electrons in a conductor

is called
D. the diode is working correctly.
A. voltage.
Answer: Option C
B. current.
C. recombination.
2. Single-element semiconductors are characterized by
atoms with ____ valence electrons. D. equilibrium.
A. 3 Answer: Option B
B. 4 7. For a forward-biased diode, the barrier potential

________ as temperature increases.
C. 5 A. decreases
D. 2 B. remains constant
E. none of the above C. increases
Answer: Option B Answer: Option A
8. The wide end arrow on a schematic indicates the

________ of a diode.
A. ground
3. Under normal conditions a diode conducts current B. direction of electron flow
when it is
A. reverse-biased. C. cathode
B. forward-biased. D. anode
Answer: Option D
C. avalanched.
9. An n-type semiconductor material
D. saturated.
A. is intrinsic.
Answer: Option B
B. has trivalent impurity atoms added.
4. A diode conducts when it is forward-biased, and the C. has pentavalent impurity atoms added.
anode is connected to the ________ through a
limiting resistor. D. requires no doping.
A. positive supply Answer: Option C
Explanation:
B. negative supply N-type Semiconductor :
C. cathode An intrinsic semiconductor material is a poor

conductor. When a small amount of pentavalent
D. anode impurity is added to the intrinsic material its
Answer: Option A conductivity rises sharply. This material formed after
the addition of pentavalent impurity to the intrinsic
semiconductor material is called N-type material.
Addition of small amount of pentavalent atoms in the
intrinsic material provides large number of free
C. a forward-biased silicon diode.
electrons for conduction.
D. a reverse-biased germanium diode.
10. For a forward-biased diode, as temperature is
________, the forward current ________ for a given Answer: Option B
value of forward voltage.
A. decreased, increases 15. An ideal diode presents a(n) ________ when
reversed-biased and a(n) ________ when forward-
B. increased, increases biased.
C. increased, decreases A. open, short
D. decreased, decreases B. short, open

Answer: Option B C. open, open
D. short, short
11. Which statement best describes an insulator? Answer: Option A
A. A material with many free electrons.
16. A reverse-biased diode has the ________
B. A material doped to have some free electrons. connected to the positive side of the source, and the
________ connected to the negative side of the
C. A material with few free electrons. source.
D. No description fits. A. cathode, anode
Answer: Option C B. cathode, base
C. base, anode
12. Effectively, how many valence electrons are there in
each atom within a silicon crystal? D. anode, cathode
A. 2 Answer: Option A
B. 4
17. What types of impurity atoms are added to increase
C. 8 the number of conduction-band electrons in intrinsic
silicon?
D. 16
A. bivalent
Answer: Option C
B. octavalent
13. The boundary between p-type material and n-type C. pentavalent
material is called
A. a diode. D. trivalent
B. a reverse-biased diode. E. none of the above

Answer: Option C
C. a pn junction.
D. a forward-biased diode. 18. What factor(s) do(es) the barrier potential of a pn

Answer: Option C junction depend on?
A. type of semiconductive material
14. You have an unknown type of diode in a circuit. You B. the amount of doping
measure the voltage across it and find it to be 0.3 V.
The diode might be C. the temperature
A. a silicon diode.
D. all of the above
B. a germanium diode.
type of semiconductive material and the that impurities are added to decrease the
E. C.
amount of doping but not the temperature resistance of the material.
Answer: Option D
that all impurities are removed to get pure
D.
silicon.
19. An atom is made up of Answer: Option C
A. protons.
B. neutrons. 24. The forward voltage across a conducting silicon

diode is about
C. electrons. A. 0.3 V.
D. all of the above B. 1.7 V.

Answer: Option D
C. –0.7 V.
20. Reverse breakdown is a condition in which a diode D. 0.7 V.
A. is subjected to a large reverse voltage. Answer: Option D

Explanation:
is reverse-biased and there is a small No answer description available for this
B. question. Let us discuss.
leakage current.
C. has no current flowing at all.

25. The most common type of diode failure is a(n)
is heated up by large amounts of current in ________.
D.
the forward direction. A. open
Answer: Option A
B. short
21. There is a small amount of current across the barrier C. resistive

of a reverse-biased diode. This current is called Answer: Option A
A. forward-bias current.
B. reverse breakdown current. 26. What occurs when a conduction-band electron loses
energy and falls back into a hole in the valence
C. conventional current. band?
A. doping
D. reverse leakage current.
Answer: Option D B. recombination
C. generation
22. As the forward current through a silicon diode Answer: Option B
increases, the voltage across the diode
A. increases to a 0.7 V maximum.
27. The maximum number of electrons in each shell of
B. decreases. an atom is
A. 2.
C. is relatively constant.
B. 2n2 where n is the number of the shell.
D. decreases and then increases.
Answer: Option C C. 4.
D. 8.
23. Doping of a semiconductor material means Answer: Option B
that a glue-type substance is added to hold
A.
the material together.
28. A silicon diode is forward-biased. You measure the
that impurities are added to increase the voltage to ground from the anode at ________, and
B. the voltage from the cathode to ground at ________.
resistance of the material.
3. The Schottky diode is used
A. 0 V, 0.3 V
A. in high-power circuits.
B. 2.3 V, 1.6 V
B. in circuits requiring negative resistance.
C. 1.6 V, 2.3 V
C. in very fast-switching circuits.
D. 0.3 V, 0 V
D. in power supply rectifiers.
Answer: Option B
Explanation: Answer: Option C
For silicon diodes, the built-in potential is
approximately 0.7 V. Thus, if an external current is 4. You have an application for a diode to be used in a
passed through the diode, about 0.7 V will be tuning circuit. A type of diode to use might be
developed across the diode such that the P-doped
region is positive with respect to the N-doped region A. an LED.
and the diode is said to be "turned on" as it has a
B. a Schottky diode.
forward bias.
Therefore, 2.3 V - 1.6 V = 0.7 V. Hence the answer C. a Gunn diode.
is correct.
D. a varactor.
Answer: Option D
29. The term bias in electronics usually means
A. the value of ac voltage in the signal. 5. Refer to this figure. Which symbol is correct for an
LED?
B. the condition of current through a pn junction.
the value of dc voltages for the device to

C.
operate properly.
D. the status of the diode.

Answer: Option C
A. a
SPECIAL-PURPOSE DIODE
B. b
1. Schottky diodes are also known as
C. c
A. PIN diodes.
B. D. d
hot carrier diodes.
E. e
C. step-recovery diodes.
Answer: Option A
D. tunnel diodes.
Answer: Option B
6. Refer to this figure. If VIN increases, IZ will
2. Zener diodes with breakdown voltages less than 5 V

operate predominantly in what type of breakdown?
A. avalanche
B. zener
C. varactor
D. Schottky
Answer: Option B A. increase.
10. Refer to this figure. Identify the Schottky diode.
B. decrease.
C. remain the same.

Answer: Option A
7. What kind of diode is formed by joining a doped

semiconductor region with a metal?
A. laser
B. tunnel A. a
C. pin B. b
D. Schottky C. c
Answer: Option D D. d
E. e
8. Refer to this figure. Which symbol is correct for a
zener diode? Answer: Option E
11. LEDs are made out of

A. silicon.
B. germanium.
C. gallium.
D. silicon and germanium, but not gallium.

A. a Answer: Option C
B. b
12. The normal operating region for a zener diode is the
C. c
A. forward-bias region.
D. d
B. reverse-bias region.
E. e
C. zero-crossing region.
Answer: Option B
D. reverse-breakdown region.
9. Which diode employs graded doping? Answer: Option D
A. zener
13. Refer to this figure. If VIN attempts to increase,
B. LED
VR will
C. tunnel
D. step-recovery
Answer: Option D
A. increase.
B. decrease.
C. remain the same.
Answer: Option A
14. An LED is forward-biased. The diode should be on,

but no light is showing. A possible trouble might be
A. the diode is open.
B. the series resistor is too small.
none. The diode should be off if forward- A. remain the same, increase
C.
biased.
B. decrease, remain the same
D. the power supply voltage is too high.
Answer: Option A C. increase, remain the same
D. remain the same, decrease

15. A 6.2 V zener is rated at 1 watt. The maximum safe Answer: Option D
current the zener can carry is
A. 1.61 A.
18. The process of emitting photons from a
B. 161 mA. semiconductive material is called
A. photoluminescence.
C. 16.1 mA.
B. gallium arsenide.
D. 1.61 mA.
Answer: Option B C. electroluminescence.
D. gallium phosphide.
16. Refer to this figure. Find the tunnel diode symbol. Answer: Option C
19. An 8.2 V zener has a resistance of 5 . The actual

voltage across its terminals when the current is 25
mA is
A. 8.2 V.
B. 125 mV.
A. a C. 8.325 V.
B. b D. 8.075 V.
Answer: Option C
C. c
D. d 20. What diode operates only with majority carriers?
E. A. laser
e
Answer: Option D B. tunnel
C. Schottky
17. Refer to this figure. If the load current increases,
IR will ________ and IZ will ________. D. step-recovery
Answer: Option C
21. Refer to this figure. Which symbol is correct for a

photodiode?
C. remain the same.
Answer: Option B
25. Zener diodes with breakdown voltages greater than

5 V operate predominantly in what type of
breakdown?
A. avalanche
A. a B. zener
B. b C. varactor
C. c D. Schottky
D. d Answer: Option A
E. e
26. Back-to-back varactor diodes are used for what
Answer: Option C reason?
A. over-voltage protection
22. What type of diode maintains a constant current?
B. a wider tuning range
A. LED
C. to eliminate harmonic distortion
B. zener
no reason; only zeners are used in a back-to-
C. current regulator D.
back configuration
D. pin Answer: Option C
E. none of the above

27. A tunnel diode is used
Answer: Option C
A. in high-power circuits.
23. What diode is used in seven-segment displays? B. in circuits requiring negative resistance.
A. zener C. in very fast-switching circuits.
B. LED D. in power supply rectifiers.
C. laser Answer: Option B
D. Schottky
28. What type of diode is commonly used in electronic
Answer: Option B
tuners in TVs?
A. varactor
24. Refer to this figure. If V IN decreases, IR will
B. Schottky
C. LED
D. Gunn
Answer: Option A
29. A laser diode normally emits

A. coherent light.
A. increase. B. monochromatic light.
B. decrease. C. coherent and monochromatic light.
3. Refer to this figure. If VCE = 0.2 V, IC(sat) is:
D. neither coherent nor monochromatic light.
Answer: Option C
30. A varactor is a pn junction diode that always

operates in ________-bias and is doped to
________ the inherent capacitance of the depletion
region.
A. forward, maximize
B. reverse, maximize
C. reverse, minimize
D. forward, minimize
Answer: Option B A. 0.05 mA
B. 2.085 mA
BIPOLAR JUNCTION TRANSISTORS
C. 1.065 mA
1. Refer to this figure. Determine the minimum value of
IB that will produce saturation. D. 7.4 mA
Answer: Option B
4. What is the ratio of IC to IB?

A. DC
B. hFE
C. DC
D. either DC or hFE, but not DC
Answer: Option D
A. 0.25 mA 5. For normal operation of a pnp BJT, the base must

be ________ with respect to the emitter and
B. 5.325 A ________ with respect to the collector.
A. positive, negative
C. 1.065 A
B. positive, positive
D. 10.425 A
Answer: Option D C. negative, positive
D. negative, negative
2. A transistor amplifier has a voltage gain of 100. If Answer: Option C
the input voltage is 75 mV, the output voltage is:
A. 1.33 V
B. 7.5 V
C. 13.3 V
D. 15 V
Answer: Option B
6. Refer to this figure. The value of V BC is: 10. A certain transistor has IC = 15 mA and IB = 167
A; DC is:
A. 15
B. 167
C. 0.011
D. 90
Answer: Option D
11. Refer to this figure. The value of V CE is:
A. 9.2 V
B. 9.9 V
C. –9.9 V
D. –9.2 V
Answer: Option D
7. When a transistor is used as a switch, it is stable in

which two distinct regions?
A. saturation and active
A. 9.9 V
B. active and cutoff
B. 9.2 V
C. saturation and cutoff
C. 0.7 V
D. none of the above
D. 19.3 V
Answer: Option C
Answer: Option A
8. The term BJT is short for

12.
A. base junction transistor. What does DC vary with?
A. IC
B. binary junction transistor.
B. ºC
C. both junction transistor.
C. both IC and ºC
D. bipolar junction transistor.
Answer: Option D D. IC, but not ºC
Answer: Option C
9. For a silicon transistor, when a base-emitter junction

is forward-biased, it has a nominal voltage drop of 13.
A BJT has an IB of 50 A and a DC of 75; IC is:
A. 0.7 V.
A. 375 mA
B. 0.3 V.
B. 37.5 mA
C. 0.2 V.
C. 3.75 mA
D. VCC.
D. 0.375 mA
Answer: Option A
Answer: Option C
14. Refer to this figure. The value of V BE is:
D. 150 k
Answer: Option A
17.
The value of DC
A. is fixed for any particular transistor.
B. varies with temperature.
C. varies with IC.
D. varies with temperature and IC.

Answer: Option D
A. 0.6 V
B. 0.7 V 18.
A transistor data sheet usually identifies DC as
C. 1.2 V A. hre.
D. 0.079 V B. hFE.
Answer: Option B C. I C.
D. VCE.
15. What are the two types of bipolar junction
transistors? Answer: Option B
A. npn and pnp

19. What is the ratio of IC to IE?
B. pnn and nnp
A. DC
C. ppn and nnp
B. /( + 1)
D. pts and stp DC DC
Answer: Option A C. DC
D. either /( + 1) or DC, but not

16. DC DC DC
In this circuit DC = 100 and VIN = 8 V. The value of
RB that will produce saturation is: Answer: Option D
20.
Refer to this figure. The value of DC = 100 and
VIN = 8 V. Determine IC(sat).
A. 92 k
B. 9.1 M
C. 100 k A. 18 mA
B. 7.92 mA A. 3.5 V
C. 1.8 mA B. 28.57 V
D. 8 A C. 4.375 mV
Answer: Option B D. 4.375 V
Answer: Option D
21. Which of the following is true for an npn or pnp
transistor?
26. What is (are) general-purpose/small-signal
A. IE = I B + IC transistors case type(s)?
B. I B = I C+ I E A. TO-18
C. IC = I B + IE B. TO-92
D. none of the above C. TO-39

Answer: Option A D. TO-52
E. all of the above

22. What is the order of doping, from heavily to lightly
doped, for each region? Answer: Option E
A. base, collector, emitter
27. What is (are) common fault(s) in a BJT-based
B. emitter, collector, base circuit?
C. emitter, base, collector A. opens or shorts internal to the transistor
D. collector, emitter, base B. open bias resistor(s)

Answer: Option B external opens and shorts on the circuit
C.
board
23. In what range of voltages is the transistor in the D. all of the above
linear region of its operation?
Answer: Option D
A. 0 < VCE
B. 0.7 < VCE < VCE(max) 28. The dc load line on a family of collector
characteristic curves of a transistor shows the
C. VCE(max) > VCE
A. saturation region.
B. cutoff region.
Answer: Option B
C. active region.
24. The magnitude of dark current in a phototransistor D. all of the above
usually falls in what range?
Answer: Option D
A. mA
B. μA 29. Refer to this figure. Determine the minimum value of

VIN from the following that will saturate this
C. nA
transistor.
D. pA
Answer: Option C
25. A 35 mV signal is applied to the base of a properly

biased transistor with an r'e = 8 and RC = 1 k .
The output signal voltage at the collector is:
A. Current tracer
B. Digital display meter (DDM)
C. Ohmmeter (VOM)
D. All of the above
Answer: Option D
4. For what kind of amplifications can the active region

of the common-emitter configuration be used?
A. 13.21 V A. Voltage
B. 12.51 V
B. Current
C. 0.7 V
D. 9.4 V C. Power
Answer: Option A
D. All of the above
BJT DEVICES Answer: Option D
1. How much is the base-to-emitter voltage of a

transistor in the "on" state? 5. In the active region, while the collector-base junction
is ________-biased, the base-emitter is ________-
A. 0V biased.
A. forward, forward
B. 0.7 V
B. forward, reverse
C. 0.7 mV
C. reverse, forward
D. Undefined
D. reverse, reverse
Answer: Option B
Answer: Option C
2. How many layers of material does a transistor have?
A. 1 6. A transistor can be checked using a(n) ________.
A. curve tracer
B. 2
B. digital meter
C. 3
C. ohmmeter
D. 4
D. Any of the above
Answer: Option C
Answer: Option D
3. Which of the following equipment can check the
condition of a transistor?
7. What range of resistor values would you get when
checking a transistor for forward- and reverse-
biased conditions by an ohmmeter? 11. An example of a pnp silicon transistor is a 2N4123.
A. 100 to a few k , exceeding 100 k A. True
B. Exceeding 100 k , 100 to a few k B. False
Answer: Option B
C. Exceeding 100 k , exceeding 100 k
12. Which of the following is (are) the terminal(s) of a

D. 100 to a few k , 100 to a few k transistor?
A. Emitter
Answer: Option A
B. Base
8. Calculate minority current ICO if IC = 20.002 mA and
IC majority = 20 mA.
C. Collector
A. 20 A
D. All of the above

B. 0.002 A
Answer: Option D
C. 2 nA
13. Use this table of collector characteristics to
D. 2 A calculate at VCE = 15 V and IB = 30 A.
ac
Answer: Option D
9. What is (are) the component(s) of electrical

characteristics on the specification sheets?
A. On
B. Off
C. Small-signal characteristics A. 100
D. All of the above B. 106
Answer: Option D
C. 50
10. In which region are both the collector-base and D. 400

base-emitter junctions forward-biased?
A. Active Answer: Option A
B. Cutoff 14. Which of the following configurations can a

transistor set up?
C. Saturation A. Common-base
D. All of the above B. Common-emitter
Answer: Option C
18.
C. Common-collector
D. All of the above
Answer: Option D
15. What does a reading of a large or small resistance

in forward- and reverse-biased conditions indicate
when checking a transistor using an ohmmeter?
A. Faulty device A. 100
B. Good device B. 116
C. Bad ohmmeter C. 50
D. None of the above D. 110
Answer: Option A Answer: Option D
16. 19. Which of the following can be obtained from the last
Determine the value of when = 100. scale factor of a curve tracer?
A. 1.01 A. hFE
B. 101 B. dc
C. 0.99
C. ac
Cannot be solved with the information

D. D.
provided ac
Answer: Option C Answer: Option D
Calculate ac for IC = 15 mA and VCE = 5 V.

17. Transistors are ________-terminal devices.
A. 2
B. 3
C. 4
D. 5
Answer: Option B
Calculate dc at VCE = 15 V and IB = 30 A.

20. Answer: Option A
23. What are the ranges of the ac input and output

resistance for a common-base configuration?
A. 10 –100 , 50 k –1 M
B. 50 k –1 M , 10 –100
C. 10 –100 k , 50 –1 k
D. None of the above
Answer: Option A
24. What is the most frequently encountered transistor

configuration?
A. 200 A. Common-base
B. 180 B. Common-collector
C. 220 C. Common-emitter
D. None of the above D. Emitter-collector
Answer: Option A Answer: Option C
21. 25.
dc = ________ dc for this set of collector characteristics is within
A. IB / IE ________ percent of ac.
B. IC / I E
C. IC / I B
Answer: Option C
22. How many carriers participate in the injection A. 2

process of a unipolar device?
A. 1 B. 5
B. 2 C. 7
C. 0 D. 10
D. Answer: Option D
3
26. Which of the following regions is (are) part of the 30. For a properly biased pnp transistor, let IC = 10 mA
output characteristics of a transistor? and IE = 10.2 mA. What is the level of I B?
A. Active A. 0.2 A
B. Cutoff B. 200 mA
C. Saturation C. 200 A
D. All of the above D. 20.2 mA
Answer: Option D Answer: Option C
27. How many individual pnp silicon transistors can be 31. What is (are) the component(s) of most specification
housed in a 14-pin plastic dual-in-line package? sheets provided by the manufacturer?
A. 4 A. Maximum ratings
B. 7 B. Thermal characteristics
C. 10 C. Electrical characteristics
D. 14 D. All of the above
Answer: Option A Answer: Option D
28. In what decade was the first transistor created? 32.

What is dc equal to?
A. 1930s
A. IB / IE
B. 1940s
B. IC / IE
C. 1950s
C. IC / IB
D. 1960s
Answer: Option B
Answer: Option C
29. Most specification sheets are broken down into

________. 33. List the types of bipolar junction transistors.
A. maximum ratings A. ppn, npn
B. B. pnp, npn
thermal characteristics
C. electrical characteristics C. npp, ppn
D. D. nnp, pnp
All of the above
Answer: Option B
Answer: Option D
34. What is the ratio of the total width to that of the
center layer for a transistor?
A. 1:15 Answer: Option C
B. 1:150 3. Which of the h-parameters corresponds to re in a

common-base configuration?
C. 15:1 A. hib
D. 150:1 B. hfb
Answer: Option D
C. hrb
35. Which component of the collector current I C is called D. hob

the leakage current?
A. Majority Answer: Option A
B. Independent 4. Refer to this figure. Find the value of I E.
C. Minority
Answer: Option C
BJT AMPLIFIERS
1. The current gain for the Darlington connection is
________.
A.
B.
C. A. 2 mA
D. B. 4 mA
Answer: Option B C. 5 mA
2. Which of the following configurations has the lowest D. 6 mA

output impedance?
A. Fixed-bias Answer: Option D
B. Voltage-divider 5. Which of the following is referred to as the reverse

transfer voltage ratio?
C. Emitter-follower A. hi
B. hr
8. For a common-emitter amplifier, the purpose of
C. hf swamping is
A. to minimize gain.
D. ho
B. to reduce the effects of r'e
Answer: Option B
C. to maximize gain.
6. Which of the following conditions must be met to
allow the use of the approximate approach in a
D. no purpose.
voltage-divider bias configuration?
A. re > 10R2 Answer: Option B
B. 9. What is the typical value of the current gain of a

RE > 10R2 common-base configuration?
A. Less than 1
C. RE < 10R2
B. Between 1 and 50
D. re < 10R2
C. Between 100 and 200
Answer: Option D
D. Undefined
7. Refer to this figure. Determine the value of A v.
Answer: Option A
10. What is the most important r parameter for amplifier

analysis?
A. rb′
B. rc′
C. re′
Answer: Option C
11. An emitter-follower is also known as a

A. common-emitter amplifier.
A. 49.6 B. common-base amplifier.
B. 5 C. common-collector amplifier.
C. 100 D. Darlington pair.
Answer: Option C
D. 595
Answer: Option B
12. The ________ model fails to account for the output
D. emitter-follower
impedance level of the device and the feedback
effect from output to input.
Answer: Option C
A. hybrid equivalent
15. What is the voltage gain of a feedback pair

B. re connection?
A. 1
C.
B. –1
D. Thevenin
C. 100
Answer: Option B
D. –100
13. Refer to this figure. Calculate the value of V B.
Answer: Option A
16. A common-emitter amplifier has ________ voltage

gain, ________ current gain, ________ power gain,
and ________ input impedance.
A. high, low, high, low
B. high, high, high, low
C. high, high, high, high
D. low, low, low, high
Answer: Option B
A. 5V 17. What is the range of the input impedance of a

B. 3.7 V A. A few ohms to a maximum of 50
C. 20 V B. 1k to 5 k
D. 3V C. 100 k to 500 k
Answer: Option B D. 1M to 2 M
14. You have a need to apply an amplifier with a very Answer: Option A
high power gain. Which of the following would you
choose?
18. The advantage that a Sziklai pair has over a
A. common-collector Darlington pair is
A. higher current gain.
B. common-base
B. less input voltage is needed to turn it on.
C. common-emitter
C. higher input impedance. B. 3.77 k
D. higher voltage gain. C. 378
Answer: Option B
D. 2.25 k
19. What is the typical range of the output impedance of Answer: Option B
a common-emitter configuration?
A. 10 to 100
22. What is the range of the current gain for BJT
transistor amplifiers?
B. 1k to 5 k A. less than 1
C. 40 k to 50 k B. 1 to 100
D. 500 k to 1 k C. above 100
Answer: Option C D. All of the above
20. What is the unit of the parameter h o? Answer: Option D

A. Volt
23. What does the negative sign in the voltage gain of
the common-emitter fixed-bias configuration
B. Ohm
indicate?
The output and input voltages are 180º out of
C. Siemen A.
phase.
D. No unit B. Gain is smaller than 1.
Answer: Option C
C. Gain is larger than 1.
21. Refer to this figure. Calculate the value of Rin(tot).

Answer: Option A
24. For the common-emitter fixed-bias configuration,

there is a ________ phase shift between the input
and output signals.
A. 0º
B. 45º
C. 90º
D. 180º
Answer: Option D
A. 37.7 k
25. Which one of the following configurations has the
D. high, high
lowest input impedance?
A. Fixed-bias Answer: Option C
B. Common-base 29. The differential amplifier produces outputs that are

A. common mode.
C. Emitter-follower
B. in-phase with the input voltages.

D. Voltage-divider?
Answer: Option B C. the sum of the two input voltages.
D. the difference of the two input voltages.

26. Which of the following represent(s) the advantage(s)
of the system approach over the r-model approach?
Answer: Option D
A. Thevenin's theorem can be used.
30. The ________ model suffers from being limited to a

The effect of changing the load can be particular set of operating conditions if it is to be
B.
determined by a simple equation. considered accurate.
A. hybrid equivalent
There is no need to go back to the ac
C. equivalent model and analyze the entire
B. re
network.
D. All of the above C.
Answer: Option D D. Thevenin
27. The differential amplifier has Answer: Option A

A. one input and one output.
31. Under which of the following condition(s) is the
B. two inputs and two outputs. current gain ?
A. ro 10RC
C. two inputs and one output.
B. RB 10re
D. one input and two outputs.
C. ro 10RC and RB 10re
Answer: Option C

28. The emitter-follower configuration has a ________
impedance at the input and a ________ impedance
Answer: Option C
at the output.
A. low, low
32. The ________ configuration is frequently used for
impedance matching.
B. low, high
A. fixed-bias
C. high, low
B. voltage-divider bias
35. Refer to this figure. Determine the value of V C.
C. emitter-follower
D. collector feedback
Answer: Option C
33. Refer to this figure. You notice while servicing this

amplifier that the output signal at V out is reduced
from normal. The problem could be caused by
A. 20 V
B. 10 V
A. an open C3.
C. 5V
B. an open C2.
D. 0V
C. an open base-emitter of Q2.
Answer: Option C
D. a shorted C2.
36. In a common-base amplifier, the input signal is
Answer: Option B connected to the
A. base.
34. When the bypass capacitor is removed from a
common-emitter amplifier, the voltage gain B. collector.
A. increases.
C. emitter.
B. decreases.
D. output.
C. has very little effect.
Answer: Option C
Answer: Option B
37. Which of the following is (are) true to achieve a good

overall voltage gain for the circuit?
The effect of Rs and RL must be considered
A.
as a product.
The effect of Rs and RL must be considered

B.
as a product and evaluated individually.
40.
The effect of Rs and RL must be evaluated
C.
individually.
Answer: Option B
38. To analyze the common-emitter amplifier, what must

be done to determine the dc equivalent circuit?
A. leave circuit unchanged
replace coupling and bypass capacitors with

B.
opens
replace coupling and bypass capacitors with

C.
shorts
A. 416
D. replace VCC with ground

B. 5k
Answer: Option B
C. 50 k
39. For the common-emitter amplifier ac equivalent
circuit, all capacitors are D. 500
A. effectively shorts.
Answer: Option A
B. effectively open circuits.
41. Under which of the following conditions is the output
C. not connected to ground. impedance of the network approximately equal to
RC for a common-emitter fixed-bias configuration?
A. ro 10RC
D. connected to ground.
Answer: Option A B. ro < 10RC
Refer to this figure. If an emitter bypass capacitor C. ro < ro

was installed, determine the value of Rin(base).
D. ro > ro
Answer: Option A
42. Which of the following gains is less than 1 for a

A. Ai
B. Av
C. Ap
D. None of the above C. re
Answer: Option A
D. Ib
43. Which of the following define(s) the conversion Answer: Option C

efficiency?
A. Ac power to the load/ac input power
47. Which of the following is (are) true regarding the
input impedance for frequencies in the midrange
B. Ac power to the load/dc power supplied 100 kHz of a BJT transistor amplifier?
A. The input impedance is purely resistive.
C. Dc output power/ac input power
B. It varies from a few ohms to megohms.
D. All of the above
An ohmmeter cannot be used to measure the
Answer: Option B C.
small-signal ac input impedance.
44. The dc emitter current of a transistor is 8 mA. What D. All of the above
is the value of re?
A. 320 Answer: Option D
B. 13.3 k 48. For the collector dc feedback configuration, there is

a ________ phase shift between the input and
output signals.
C. 3.125
A. 0º
D. 5.75
B. 45º
Answer: Option C
C. 90º
45. Which of the following should be done to obtain the

ac equivalent of a network? D. 180º
A. Set all dc sources to zero
Answer: Option D
Replace all capacitors by a short-circuit

B. 49. A common-collector amplifier has ________ input
equivalent.
resistance, ________ current gain, and ________
voltage gain.
Remove all elements bypassed by the short- A. high, high, low
C.
circuit equivalent.
B. high, low, low

D. All of the above
Answer: Option D C. high, low, high
Answer: Option A
46. In an unbypassed emitter bias configuration
hie replaces ________ in the re model.
A. re 50. The total gain of a multistage amplifier is the
________.
A. sum of individual voltage gains
B.
B. sum of dB voltage gains B. to reduce noise.
Answer: Option B
C. to despike the supply voltage.
51. Which of the following configurations has an output D. to maximize amplifier gain.
impedance Zo equal to RC?
A. Fixed-bias common-emitter Answer: Option D
Common-emitter voltage-divider with bypass 54. For BJT amplifiers, the ________ gain typically
B.
capacitor ranges from a level just less than 1 to a level that
may exceed 1000.
Common-emitter voltage-divider without A. voltage
C.
bypass capacitor
B. current
D. All of the above
C. impedance
Answer: Option D
D. All of the above

52. Refer to this figure. Find the value of Rin(base).
Answer: Option B
55. The loaded voltage gain of an amplifier is always

more than the no-load level.
A. True
B. False
Answer: Option B
56. Which of the following configurations has a voltage

gain of –RC /re?
A. Fixed-bias common-emitter
Common-emitter voltage-divider with bypass

B.
A. 420 capacitor
Fixed-bias common-emitter and voltage-

B. 50 k C.
divider with bypass capacitor
C. 940
Common-emitter voltage-divider without
D.
bypass capacitor
D. 100.8
Answer: Option C
Answer: Option B
57. An emitter-follower amplifier has an input impedance
53. For a common-emitter amplifier, the purpose of the of 107 k . The input signal is 12 mV. The
emitter bypass capacitor is approximate output voltage is (common-collector)
A. no purpose, since it is shorted out by RE. A. 8.92 V
60. What is the limit of the efficiency defined by = P o /
B. 112 mV
P i?
A. Greater than 1
C. 12 mV
B. Less than 1
D. 8.9 mV
Answer: Option C C. Always 1
58. Which of the following is (are) true regarding the D. None of the above
output impedance for frequencies in the midrange
100 kHz of a BJT transistor amplifier? Answer: Option B
A. The output impedance is purely resistive.
61. What is re equal to in terms of h parameters?
It varies from a few ohms to more than 2 M A. hre / hoe
B.
.
B. (hre + 1) / hoe
An ohmmeter cannot be used to measure the
C.
small-signal ac output impedance. C. hie – (hre / hoe)(1 + hfe)
D. All of the above D. hfe
Answer: Option D
59. Refer to this figure. The output signal from the first Answer: Option A
stage of this amplifier is 0 V. The trouble could be
caused by
62. What is the controlling current in a common-base
configuration?
A. Ie
B. Ic
C. Ib
Answer: Option A
A. an open C4. 63. Which of the following techniques can be used in the
sinusoidal ac analysis of transistor networks?
B. an open C2. A. Small-signal
C. an open base-emitter of Q1. B. Large-signal
D. a shorted C4. C. Small- or large-signal
Answer: Option C
Answer: Option C
C. 398
64. The input impedance of a BJT amplifier is purely
________ in nature and can vary from a few D. 600
________ to ________.
A. resistive, ohms, megohms Answer: Option D
B. capacitive, microfarads, farads 67. A Darlington pair provides beta ________ for
________ input resistance.
C. inductive, millihenrys, henrys A. multiplication, decreased
D. None of the above B. multiplication, increased
Answer: Option A
C. division, decreased
65. The ________ the source resistance and/or Answer: Option B

________ the load resistance, the less the overall
gain of an amplifier.
68. A Darlington pair amplifier has
A. smaller, smaller
A. high input impedance and high voltage gain.
B. smaller, larger
B. low input impedance and low voltage gain.
C. larger, smaller
a voltage gain of about 1 and a low input
C.
impedance.
D. larger, larger
a low voltage gain and a high input
Answer: Option C D.
impedance.
66. Refer to this figure. If an emitter bypass capacitor Answer: Option D

was installed, what would the new A v be?
FET DEVICES
1. Which of the following ratings appear(s) in the
specification sheet for an FET?
A. Voltages between specific terminals
B. Current levels
C. Power dissipation
D. All of the above
Answer: Option D
2. What is the level of drain current I D for gate-to-

A. 4.96 source voltages VGS less than (more negative than)
the pinch-off level?
A. zero amperes
B. 125
B. IDSS
C. Negative value
D. Undefined
Answer: Option A
3. What is the level of IG in an FET?

A. Zero amperes A. 25 Vdc, –200 nAdc
B. Equal to ID B. –25 Vdc, 10 mAdc
C. Depends on VDS C. –6 Vdc, –1.0 nAdc
D. Undefined D. None of the above
Answer: Option A Answer: Option B
4. What is the range of an FET's input impedance? 7. At which of the following condition(s) is the depletion
A. region uniform?
10 to 1 k
A. No bias
B. 1k to 10 k
B. VDS > 0 V
C. 50 k to 100 k
C. VDS = VP
D. 1M to several hundred M
Answer: Option D
Answer: Option A
5. Which of the following applies to a safe MOSFET

handling? 8. What is the ratio of ID / IDSS for VGS = 0.5 VP?
A. Always pick up the transistor by the casing. A. 0.25
Power should always be off when network B. 0.5

B.
changes are made.
C. 1
Always touch ground before handling the
C.
device. D. 0
D. All of the above Answer: Option A
Answer: Option D
9. Referring to this transfer curve, determine I D at
VGS = 2 V.
6. Refer to this portion of a specification sheet.
Determine the values of reverse-gate-source voltage
and gate current if the FET was forced to accept it.
12. The BJT is a ________ device. The FET is a
________ device.
A. bipolar, bipolar
B. bipolar, unipolar
C. unipolar, bipolar
D. unipolar, unipolar
Answer: Option B
13. Referring to this transfer curve. Calculate (using

A. 0.444 mA Shockley's equation) VGS at ID = 4mA.
B. 1.333 mA
C. 0.111 mA
D. 4.444 mA
Answer: Option A
10. Which of the following controls the level of I D?

A. VGS
B. VDS
C. IG
D. VDG
A. 2.54 V
Answer: Option A
B. –2.54 V
11. It is the insulating layer of ________ in the MOSFET
construction that accounts for the very desirable C. –12 V
high input impedance of the device.
A. SiO D. Undefined
B. GaAs Answer: Option B
C. SiO2 14. The drain current will always be one-fourth of IDSS as

long as the gate-to-source voltage is ________ the
pinch-off value.
D. HCl
A. one-fourth
Answer: Option C
B. one-half
C. three-fourths
Answer: Option B
15. The transfer curve is not defined by Shockley's

equation for the ________.
A. JFET
B. depletion-type MOSFET
C. enhancement-type MOSFET
D. BJT
Answer: Option C
16. What is the purpose of adding two Zener diodes to A. 1.66 V

the MOSFET in this figure?
B. –1.66 V
C. 0.66 V
D. –0.66 V
Answer: Option A
18. The region to the left of the pinch-off locus is

A. To reduce the input impedance referred to as the ________ region.
A. saturation
B. To protect the MOSFET for both polarities
B. cutoff
C. To increase the input impedance
C. ohmic
D. All of the above
Answer: Option B
Answer: Option C
17. Referring to the following transfer curve, determine
the level of VGS when the drain current is 20 mA. 19. Refer to the following curves. Calculate I D at VGS = 1
V.
Answer: Option C
21. The three terminals of the JFET are the ________,

________, and ________.
A. gate, collector, emitter
B. base, collector, emitter
C. gate, drain, source
D. gate, drain, emitter
Answer: Option C
22. Which of the following is (are) the terminal(s) of a

field-effect transistor (FET).
A. Drain
B. Gate
C. Source
D. All of the above
Answer: Option D
23. A BJT is a ________-controlled device. The JFET is

a ________ - controlled device.
A. 8.167 mA
A. voltage, voltage
B. 4.167 mA
B. voltage, current
C. 6.167 mA
C. current, voltage
D. 0.616 mA
D. current, current
Answer: Option B
Answer: Option C
20. Which of the following transistor(s) has (have)

depletion and enhancement types? 24. How many terminals can a MOSFET have?
A. BJT A. 2
B. JFET B. 3
C. MOSFET C. 4
D. None of the above D. 3 or 4
Answer: Option D
No direct electrical connection between the
A.
25. Refer to the following figure. Calculate V GS at ID = 8 gate terminal and the channel
mA for k = 0.278 × 10 –2 A/V2.
B. Desirable high input impedance
28.
Uses metal for the gate, drain, and source
C.
connections
D. All of the above
Answer: Option D
A. 3.70 V
29. At which of the following is the level of V DS equal to
the pinch-off voltage?
B. 5.36 V
A. When ID becomes equal to IDSS
C. 7.36 V
B. When VGS is zero volts
D. 2.36 V
C. IG is zero
Answer: Option A
D. All of the above
26. The level of VGS that results in ID = 0 mA is defined
Answer: Option D
by VGS = ________.
A. VGS(off)
30. Which of the following represent(s) the cutoff region
for an FET?
B. VP
A. ID = 0 mA
C. VDS
B. VGS = VP

C. IG = 0
Answer: Option B
D. All of the above
27. Which of the following FETs has the lowest input
Answer: Option D
impedance?
A. JFET
31. Which of the following is (are) the advantage(s) of
VMOS over MOSFETs?
B. MOSFET depletion-type
A. Reduced channel resistance
C. MOSFET enhancement-type
B. Higher current and power ratings

C. Faster switching time
Answer: Option A
D. All of the above
Which of the following applies to MOSFETs?
Answer: Option D
32. Hand-held instruments are available to measure 35. Which of the following is (are) not an FET?
________ for the BJT. A. n-channel
A. dc
B. p-channel
B. IDSS
C. p-n channel
C. VP
D. n-channel and p-channel
D. All of the above
Answer: Option C
Answer: Option A
FET AMPLIFIERS
33. Which of the following input impedances is not valid
for a JFET? 1. A common-gate amplifier is similar in configuration
to which BJT amplifier?
A. 1010
A. common-emitter
B. 109
B. common-collector
C. 108
C. common-base
D. 1011 D. emitter-follower
Answer: Option C
Answer: Option C
34. Refer to the following characteristic curve. Calculate

2. The theoretical efficiency of a class D amplifier is
the resistance of the FET at V GS = –0.25 V if ro= 10 k
. A. 75%.
B. 85%.
C. 90%.
D. 100%.
Answer: Option D
3. A common-source amplifier is similar in

A. 1.1378 k configuration to which BJT amplifier?
A. common-base
B. 113.78
B. common-collector
C. 11.378
C. common-emitter
D. 11.378 k
D. emitter-follower
Answer: Option D
Answer: Option C
4. Refer to this figure. If R6 opened, the signal at the
A. current
drain of Q1 would
6.
B. voltage
Answer: Option A
7. Referring to this figure, calculate A v if rd = 19 k .
A. increase.
B. decrease.
C. remain the same.
D. distort.
Answer: Option C
A. –2.85
5. Refer to this figure. Find the value of V D.

B. –3.26
C. –2.95
D. –3.21
Answer: Option C
8. A common-drain amplifier is similar in configuration

to which BJT amplifier?
A. common-emitter
B. common-collector
C. common-base
A. 20 V
D. common-gate
B. 11 V
Answer: Option B
C. 10 V
Referring to this figure, calculate A v for yos = 58 S.
D. 9V
Answer: Option D
A BJT is a ________-controlled device.

9.
D. 0 V p-p.
Answer: Option A
11. Use the following equation to calculate g m for a

JFET having IDSS = 10 mA, VP = –5 V, and VGSQ = –
2.5 V.
A. 2 mS
B. 3 mS
C. 4 mS
A. –7.29
D. 5 mS
B. –7.50 Answer: Option A
C. –8.05 12. For what value of ID is gm equal to 0.5 gm0?

A. 0 mA
D. –8.55
B. 0.25 IDSS
Answer: Option A
C. 0.5 IDSS
0. Refer to this figure. If V in = 1 V p-p, the output voltage
Vout would be
D. IDSS
Answer: Option B
13. Refer to this figure. If Vin = 20 mV p-p what is the

output voltage?
A. undistorted.
B. clipped on the negative peaks.
C. clipped on the positive peaks.

15.
A. 176 mV p-p
B. 88 mV p-p
C. 48 mV p-p
D. 24 mV p-p
Answer: Option A
14. Referring to the following figure, calculate g m for

VGSQ = –1.25 V.
A. 2.2 k
B. 2.42 k
C. 2.62 k
D. 2.82 k
Answer: Option D
A. 2 mS 16. Where do you get the level of g m and rd for an FET

transistor?
B. 2.5 mS A. from the dc biasing arrangement
C. 2.75 mS B. from the specification sheet
D. 3.25 mS C. from the characteristics
Referring to this figure, calculate the value of RD if Answer: Option D

the ac gain is 10. Assume V GSQ = ¼Vp.
17. The class D amplifier uses what type of transistors?
A. JFETs
B. BJTs
C. MOSFETs
D. any of the above
Answer: Option C
18. What is (are) the function(s) of the coupling
capacitors C1 and C2 in an FET circuit?
A. to create an open circuit for dc analysis
to isolate the dc biasing arrangement from

B.
the applied signal and load
to create a short-circuit equivalent for ac

C.
analysis
D. All of the above A. increase.
Answer: Option D B. decrease.
19. An FET is a ________-controlled device. C. remain the same.

A. current
D. distort.
B. voltage
Answer: Option C
Answer: Option B
23. Referring to this figure, find Zo if yos = 20 S.
20. What is the input resistance (Rin(source)) of a common-
gate amplifier?
A. Rs
B.
C. 1 / gm
Answer: Option C
21. There is a ________º phase inversion between gate

and source in a source follower.
A. 1.85 k
A. 0
B. 1.92 k
B. 90
C. 180 C. 2.05 k
D. none of the above D. 2.15 k
22. Refer to this figure. If C4 opened, the signal voltage 24. Which of the following is a required condition to
at the drain of Q1 would simplify the equations for Zo and Av for the self-bias
configuration?
A. rd 10RD A. inverters
B. rd = RD B. NOR gates
C. rd 10RD C. NAND gates
D. None of the above D. all of the above
Answer: Option C Answer: Option D
25. The steeper the slope of the ID versus VGS curve, the 30. Referring to the transfer characteristics shown
________ the level of g m. below, calculate gm at VGSQ = –1 V.
A. less
B. same
C. greater
Answer: Option C
26. What is the typical value for the input impedance

Zi for JFETs?
A. 100 k
B. 1M
C. 10 M
A. 2 mS
D. 1000 M
B. 3 mS
Answer: Option D
C. 4 mS
27. MOSFETs make better power switches than BJTs
because they have D. 5 mS
A. lower turn-off times.
Answer: Option B
B. lower on-state resistance.

31. Which type of FETs can operate with a gate-to-
source Q-point value of 0 V?
C. a positive temperature coefficient.
A. JFET
D. all of the above

B. E-MOSFET
Answer: Option D
C. D-MOSFET
29. MOSFET digital switching is used to produce which
Answer: Option C
digital gates?
32. On which of the following parameters does rd have
D. they employ dual MOSFETs.
no or little impact in a source-follower configuration?
A. Zi Answer: Option A
B. Zo 35. Refer to this figure. If R7 were to decrease in value,

Vout would
C. Av
D. All of the above
Answer: Option D
33. Refer to this figure. For midpoint biasing, I D would be
A. increase.
B. decrease.
C. remain the same.
D. distort.
Answer: Option B
36. Refer to this figure. If ID = 4 mA, find the value of V GS.

A. 10 mA.
B. 7.5 mA.
C. 5 mA.
D. 2.5 mA.
Answer: Option C
34. Class D amplifiers differ from all other classes of

amplifiers because
the output transistors are operated as
A.
switches.
A. 10.8 V
B. of their very low input capacitance.
B. 6V
C. of their high-frequency response capabilities.
C. –0.7 V
40. Referring to this figure, calculate Zo if rd = 19 k .
D. –6 V
Answer: Option D
37. Which FET amplifier(s) has (have) a phase inversion

between input and output signals?
A. common-gate
B. common-drain
C. common-source
D. all of the above

A. 1.75 k
Answer: Option C
B. 1.81 k
38. What common factor determines the voltage gain
and input resistance of a common-gate amplifier?
C. 1.92 k
A. RD
B. D. 2.00 k
RL
Answer: Option B
C. gm
Answer: Option C 41. Referring to this figure, calculate Zi if rd = 19 k .
39. Referring to the figure below, determine the output

impedance for VGS = –3 V at VDS = 5 V.
A. 100 k A. 2.42 M
B. 80 k B. 2.50 M
C. 25 k C. 2.53 M
D. 5k D. 2.59 M

42. For the fixed-bias configuration,
A. 362.52
if ________.
A. RD B. 340.5
B. C. 420.5
C. RG D. 480.9
D. Answer: Option D
Answer: Option B 45. The more horizontal the characteristic curves on the
drain characteristics, the ________ the output
impedance.
43. Referring to this figure, obtain g m for ID = 6 mA.
A. less
B. same
C. greater
Answer: Option C
46. Refer to this figure. If g m = 4000 mS and a signal of

75 mV rms is applied to the gate, calculate the p-p
output voltage.
A. 2.83 mS
B. 3.00 mS
C. 3.25 mS
D. 3.46 mS
Answer: Option D
44. Referring to this figure, calculate Zo for VGSQ = –3.2

V.
A. 990 mV
B. 1.13 V p-p
C. 2.8 V p-p
D. 990 V p-p
Answer: Option C
47. Refer to this figure. The approximate value of Rin is
B. decrease.
C. remain the same.
D. distort.
Answer: Option D
50. The input resistance at the gate of a FET is

extremely
A. high.
A. 100 M .
B. low.
B. 1.5 k .
Answer: Option A
C. 3.3 k .
51. Determine the value for RD if the ac gain is 8.
D. 48 M .
Answer: Option A
48. Which of the following is (are) related to depletion-

type MOSFETs?
A. can be negative, zero, or positive.
B. gm can be greater or smaller than g m0.
C. ID can be larger than IDSS.
D. All of the above A. 1.51 k

Answer: Option D
B. 1.65 k
49. Refer to this figure. If C2 shorted, Vout would

C. 1.85 k
D. 2.08 k
Answer: Option B
52. Referring to this figure, calculate Zi for yos = 20 S.

Assume VGSQ = −2.2V.
A. increase.
n-channel and p-channel E-MOSFETs in
D.
parallel.
Answer: Option C
55. What is the range of g m for JFETs?

A. 1 S to 10 S
B. 100 S to 1000 S
C. 1000 S to 5000 S
D. 10000 S to 100000 S
Answer: Option C
A. 300.2
56. Calculate gm and rd if yfs = 4 mS and yos = 15 S.

B. 330.4
A. 4 mS, 66.7 k
C. 340.5
B. 4 mS, 15 k
D. 350.0
C. 66.7 k , 4 mS
Answer: Option B
53. FET amplifiers provide ________.
Answer: Option A
A. excellent voltage gain
57. What limits the signal amplitude in an analog

B. high input impedance
MOSFET switch?
A. the switch input capacitance
C. low power consumption
B. VGS(th)
D. All of the above
Answer: Option D C. the switch's power handling
54. CMOS digital switches use D. VDS
n-channel and p-channel D-MOSFETs in Answer: Option B

A.
series.
58. Input resistance of a common-drain amplifier is

n-channel and p-channel D-MOSFETs in
B. A. RG || RIN(gate).
parallel.
n-channel and p-channel E-MOSFETs in B. RG + RIN(gate).

C.
series.
C. RG.
D. RIN(gate). C. 600 k
Answer: Option A
D. 100 k
59. Refer to this Figure. If Vin was increased in Answer: Option B

amplitude a little, the signal voltage at the source of
Q2would
61. A JFET cascade amplifier employs
A. 2 common-gate amplifiers.
B. 2 common-source amplifiers.
1 common-gate and 1 common-source

C.
amplifier.
1 common-gate and 1 common-drain

D.
amplifier.
A. increase.
Answer: Option C
B. decrease.
62. E-MOSFETs are generally used in switching
C. applications because
remain the same.
A. of their very low input capacitance.
D. distort.
B. of their threshold characteristic (V GS(th)).
Answer: Option C
C. of their high-frequency response capabilities.
60. Refer to this figure. If V GS = –6 V, calculate the value
of RS that will provide this value. D. of their power handling.
Answer: Option B
63. For an FET small-signal amplifier, one could go

about troubleshooting a circuit by ________.
A. viewing the circuit board for poor solder joints
B. using a dc meter
C. applying a test ac signal
D. All of the above
Answer: Option D
A. 2.2 k
64. The E-MOSFET is quite popular in ________
applications.
B. 1.2 k A. digital circuitry
B. high-frequency A. 2.92 k
C. buffering B. 3.20 k
D. All of the above C. 3.25 k
Answer: Option D
D. 3.75 k
65. Referring to this figure, calculate A v if yos = 20 S. Answer: Option A
67. In a common-source amplifier, the purpose of the

bypass capacitor, C2, is to
A. keep the source effectively at ac ground.
B. provide a dc path to ground.
C. provide coupling to the input.
D. provide coupling to the load.
Answer: Option A
A. –3.48 68. Refer to this figure. The voltage gain is
B. –3.56
C. –3.62
D. –4.02
Answer: Option C
66. Referring to this figure, calculate Zo if yos = 40 S.
A. 1.2.
B. 2.4.
C. 4.4.
D. 8.8.
Answer: Option D
69. Refer to this figure. If ID = 4 mA, IDSS = 16 mA, and
VGS(off) = –8 V, find VDS.
2. What is the ratio of the capacitive reactance X CS to
the input resistance RI of the input RC circuit of a
single-stage BJT amplifier at the low-frequency
cutoff?
A. 0.25
B. 0.50
C. 0.75
D. 1.0
Answer: Option D
3. For which of the following frequency region(s) can

the coupling and bypass capacitors no longer be
A. 19.2 V replaced by the short-circuit approximation?
B. –6 V A. Low-frequency
C. 10.8 V B. Mid-frequency
D. 30 V C. High-frequency
70. If ID = IDSS / 2, gm = ________ gmo. Answer: Option A
A. 1
4. Determine the lower cutoff frequency of this network.

B. 0.707
C. 0.5
Answer: Option B
BJT AND FET FREQUENCY RESPONSE

1. A change in frequency by a factor of ________ is
equivalent to 1 octave.
A. 2
B. 10
C. 5
D. 20 A. 15.8 Hz
Answer: Option A
B. 46.13 Hz B.
C. 238.73 Hz C. 1
D. 1575.8 Hz D. 2
Answer: Option C Answer: Option B
5. The smaller capacitive elements of the design will 9. An amplifier rated at 30-W output is connected to a
determine the ________ cutoff frequencies.
5- speaker. Calculate the input power required for
A. low full power output if the power gain is 20 dB.
A. 3 mW
B. mid
B. 30 mW
C. high
C. 300 mW
Answer: Option C
D. 3W
6.
What is the range of the capacitor Cds? Answer: Option C
A. 0.01 to 0.1 pF
10. The larger capacitive elements of the design will
B. 0.1 to 1 pF determine the ________ cutoff frequency.
A. low
C. 0.1 to 1 nF
B. mid
D. 0.1 to 1 F
C. high
Answer: Option B
Answer: Option A
7. An amplifier rated at 30-W output is connected to a
5- speaker. Calculate the input voltage for the 11. Which of the following elements is (are) important in
rated output if the amplifier voltage gain is 20 dB. determining the gain of the system in the high-
A. 1.225 mV frequency region?
A. Interelectrode capacitances
B. 12.25 mV
B. Wiring capacitances
C. 122.5 mV
C. Miller effect capacitance
D. 1.225 V
D. All of the above
Answer: Option D
Answer: Option D
8. A 3-dB drop in hfe will occur at a frequency defined
by ________. 12. The input power to a device is 10,000 W at 1000 V.
A. The output power is 500 W, and the output
impedance is 100 . Find the voltage gain in
decibels.
A. –30.01 dB A. RB = 0
B. –20.0 dB B. RC = 0
C. –13.01 dB C. RE = 0
D. –3.01 dB Answer: Option C
Answer: Option C
17. In the input RC circuit of a single-stage BJT, by how
much does the base voltage lead the input voltage
13. By what factor does an audio level change if the at the cutoff frequency in the low-frequency region?
power level changes from 4 W to 4096 W? A. About 0º
A. 2
B. 45º
B. 4
C. About 90º
C. 6
D. 8
Answer: Option B
Answer: Option C
18. What is the normalized gain expressed in dB for the
14. For audio systems, the reference level is generally cutoff frequencies?
accepted as ________. A. –3 dB
A. 1 mW
B. +3 dB
B. 1W
C. –6 dB
C. 10 mW
D. –20 dB
D. 100 mW
Answer: Option A
Answer: Option A
19. Which of the low-frequency cutoffs determined by
15. What is the range of the capacitors Cgs and Cgd? CS, CC, or CE will be the predominant factor in
determining the low-frequency response for the
A. 1 to 10 pF complete system?
A. lowest
B. 1 to 10 nF
B. middle
C. 1 to 10 F
C. highest
D. 1 to 10 F
Answer: Option A
Answer: Option C
16. For the low-frequency response of a BJT amplifier,
the maximum gain is where ________ .
Determine the break frequency for this circuit.
20.
C. 3162.38
D. 31623.8
Answer: Option B
24. By what other name(s) are the cutoff frequencies in

a frequency response plot called?
A. 15.915 Hz
A. Corner frequency
B. 159.15 Hz
B. Break frequency
C. 31.85 Hz
C. Half-power frequency
D. 318.5 Hz
D. All of the above
Answer: Option B
Answer: Option D
21. What is the ratio of the common logarithm of a

number to its natural logarithm? 25. The ________-frequency response of a transformer-
coupled system is calculated primarily by the stray
A. 0.435 capacitance between the turns of the primary and
secondary windings.
B. 2 A. low
C. 2.3 B. mid
D. 3.2 C. high
Answer: Option C Answer: Option C
22. Which of the following configurations does (do) not 26. logea = ________ log10a
involve the Miller effect capacitance? A. 2.3
A. Common-emitter
B. 2.718
B. Common-base
C. e
C. Common-collector
D. 1.414
D. All of the above
Answer: Option A
Answer: Option B
27. In the hybrid or Giacoletto model, which one of

23. What magnitude voltage gain corresponds to a the following does rb include?
decibel gain of 50?
A. Base spreading resistance
A. 31.6238
B. Base contact
B. 316.228
C. Base bulk A. Input wiring capacitance
D. All of the above

B. The transition capacitance ( )
Answer: Option D
C. Miller capacitance
28. What is the ratio of the output voltage to the input
voltage at the cutoff frequencies in a normalized
frequency response plot? D. All of the above
A. 0.25
Answer: Option D
B. 0.50
32. In the input RC circuit of a single-stage BJT, by how
much does the base voltage lead the input voltage
C. 0.707 for frequencies much larger than the cutoff
frequency in the low-frequency region?
D. 1 A. About 0º
Answer: Option C B. 45º
29. Which of the following statements is true for a C. About 90º

square-wave signal?
It is composed of both even and odd D. None of the above
A.
harmonics.
Answer: Option A
B. It is composed only of odd harmonics.
33. In the ________-frequency region, the capacitive
C. It is composed only of even harmonics. elements of importance are the interelectrode
(between terminals) capacitances internal to the
active device and the wiring capacitance between
The harmonics waveforms are also square the leads of the network.
D.
waves.
A. low
Answer: Option B
B. mid
30. A change in frequency by a factor of ________ is

equivalent to 1 decade. C. high
A. 2
Answer: Option C
B. 10
34. What is the ratio of the output power to the input
power at the cutoff frequencies in a normalized
C. 5 frequency response plot?
A. 0.25
D. 20
B. 0.50
Answer: Option B
C. 0.707
31. Which of the following capacitors is (are) included in
Ci for the high-frequency region of a BJT or FET
amplifier? D. 1
Answer: Option B 4. Refer to the given figure. This circuit is known as
BASIC OP-AMP CIRCUITS

1. A Schmitt trigger is
A. a comparator with only one trigger point.
B. a comparator with hysteresis.
C. a comparator with three trigger points.

A. a noninverting amplifier.
D. none of the above.
B. a differentiator.
Answer: Option B
C. an integrator.
2. Refer to the given figure. This circuit is known as
D. a summing amplifier.
Answer: Option B
5. Refer to the given figure. A square-wave input is

applied to this amplifier. The output voltage is most
likely to be
A. a noninverting amplifier.
B. a differentiator.
C. an integrator.
D. a summing amplifier.
A. a square wave.
Answer: Option C
B. a triangle wave.
3. The output of a Schmitt trigger is a
A. pulse waveform. C. a sine wave.
B. sawtooth waveform. D. no output.
Answer: Option B
C. sinusoidal waveform.
6. Refer to the given figure. What is the output

D. triangle waveform. voltage?
Answer: Option A
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A. 2V
B. –2 V
C. +Vsat A. V(out)max
D. –Vsat B. –V(out)max
Answer: Option D C. –1.41 V
7. If an op-amp comparator has a gain of 100,000, an D. +1.41 V

input difference of 0.2 mV above reference, and a
supply of 12 V, the output will be Answer: Option D
A. 20 V.
10. In a(n) ________, when the input voltage exceeds a
B. 12 V. specified reference voltage, the output changes
state.
C. 10 V. A. integrator
D. 15 V. B. differentiator
Answer: Option B C. summing amplifier
8. A comparator with a Schmitt trigger has D. comparator

A. two trigger levels.
Answer: Option D
B. a fast response.
11. Refer to the given figure. If V in = 5 V, the rate of
change of the output voltage in response to a single
C. a slow response. pulse input is:
D. one trigger level.
Answer: Option A
9. Refer to the given figure. Determine the upper

trigger point.
A. 15.2 mV/ s
B. 1.52 V/ s
C. 1.52 mV/ s
D. 15.2 V/ s
Answer: Option C
A. 1V
12. In a flash A/D converter, the priority encoder is used

B. –1 V
to
A. select the first input.
C. +Vsat
B. select the highest value input.

D. –Vsat
C. select the lowest value input. Answer: Option C
D. select the last input.

16. A good example of hysteresis is a(n)
Answer: Option B A. AM radio.
B. thermostat.
13. What circuit produces an output that approximates
the area under the curve of an input function?
A. integrator C. alarm clock.
B. differentiator D. none of the above
Answer: Option B
C. summing amplifier
17. To reduce the effects of noise resulting in erratic

D. comparator
switching of output states of a comparator, you can
use
Answer: Option A
A. the upper trigger point.
14. An op-amp has an open-loop gain of 90,000. V sat =

B. the lower trigger point.
±13 V. A differential voltage of 0.1 V p-p is applied
between the inputs. What is the output voltage?
A. 13 V C. nonzero-level detection.
B. –13 V D. hysteresis.
Answer: Option D
C. 13 Vp-p
18. Refer to the given figure. With the inputs shown,

D. 26 Vp-p determine the output voltage.
Answer: Option D
15. Refer to the given figure. Determine the output

voltage.
C. both of the above
Answer: Option B
21. Refer to the given figure. What is the output

voltage?
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A. 7V
B. –7 V
C. +Vsat
D. –Vsat A. 0.5 V
Answer: Option C
B. –0.5 V
19. Refer to the given figure. Determine the output C. 2V

voltage, VOUT.
D. –2 V
Answer: Option B
22. What type(s) of circuit(s) use comparators?

A. summer
B. nonzero-level detector
A. 1.05 V C. averaging amplifier
B. –0.35 V D. summer and nonzero-level detector
Answer: Option B
C. 0.35 V
D. –1.05 V 23. A differentiator is used to measure

A. the sum of the input voltages.
Answer: Option A
B. the difference between two voltages.
20. What is (are) the necessary component(s) for the
design of a bounded comparator? C. the area under a curve.
A. rectifier diodes
D. the rate of change of the input voltage.
B. zener diodes
Answer: Option D
24. Refer to the given figure. Determine the lower trigger
B. uses an inductor in its feedback circuit.
point.
C. uses a capacitor in its feedback circuit.
uses a resistor in its feedback circuit or uses

D.
a capacitor in its feedback circuit
Answer: Option C
28. In a comparator with output bounding, what type of

diode is used in the feedback loop?
A. Schottky
A. +V(out)max
B. junction
B. –V(out)max
C. zener
C. –2.47 V
D. varactor
D. +2.47 V
Answer: Option C
Answer: Option C
29. A comparator with hysteresis is sometimes known
as a(n)
25. A(n) ________ amplifier is a summing amplifier with
a closed-loop gain equal to the reciprocal of the A. integrator.
number of inputs.
A. averaging B. differentiator.
B. scaling C. Schmitt trigger.
C. none of the above D. none of the above
26. ________ is a mathematical process for determining 30. Which of the following are variations of the basic
the rate of change of a function. summing amplifier?
A. Integration A. averaging amplifier
B. Differentiation B. scaling amplifier
C. Summing C. both of the above
D. Answer: Option C
Comparatoring
Answer: Option B SEMICONDUCTORS DIODES
1. One eV is equal to ________ J.

27. An integrator circuit
A. 6.02 × 1023
A. uses a resistor in its feedback circuit.
B. 1.6 × 10–19 C. 40 Diffusion
C. 6.25 × 1018 D. 140 None of the above
D. 1.66 × 10–24 Answer: Option A
Answer: Option B 6. What is the state of an ideal diode in the region of

nonconduction?
2. The diode ________. A. An open circuit
A. is the simplest of semiconductor devices
B. A short circuit
has characteristics that closely match those
B.
of a simple switch C. Unpredictable
C. is a two-terminal device D. Undefined
D. All of the above Answer: Option A
Answer: Option D 7. How many orbiting electrons does the germanium

atom have?
3. It is not uncommon for a germanium diode with an A. 4
Is in the order of 1–2 A at 25°C to have leakage
current of 0.1 mA at a temperature of 100°C.
B. 14
A. True
C. 32
B. False
D. 41
Answer: Option A
Answer: Option C
4. What does a high resistance reading in both
forward- and reverse-bias directions indicate?
8. How many terminals does a diode have?
A. A good diode
A. 1
B. An open diode
B. 2
C. A shorted diode
C. 3
D. A defective ohmmeter
D. 4
Answer: Option B
Answer: Option B
5. Which capacitance dominates in the reverse-bias

region? 9. What unit is used to represent the level of a diode
forward current IF?
A. depletion
A. pA
B. conversion
B. nA
Answer: Option B
C. A
D. mA 14. At what kind of operating frequency diffusion or

transition is a capacitor represented in parallel with
the ideal diode?
Answer: Option D
A. Low frequency
10. The diffused impurities with ________ valence

electrons are called donor atoms. B. Moderate frequency
A. 4
C. Mid frequency
B. 3
D. Very high frequency
C. 5 Answer: Option D
D. 0
15. Which of the following devices can check the
condition of a semiconductor diode?
Answer: Option C
A. Digital display meter (DDM)
11. In which of the following color(s) is (are) LEDs

presently available? B. Multimeter
A. Yellow
C. Curve tracer
B. White
D. All of the above
C. Orange Answer: Option D
D. All of the above

16. Which of the following is an atom composed of?
Answer: Option D A. Electrons
12. Determining rd to a high degree of accuracy from a B. Protons

characteristic curve is very accurate.
A. True C. Neutrons
B. False D. All of the above
Answer: Option B Answer: Option D
13. What is the range of the operating voltage level for 17. The condition of a semiconductor diode can be
LEDs? determined quickly using a ________.
A. 5–12 mV A. DDM
B. 1.7–3.3 V B. VOM
C. 5–12 V C. curve tracer
D. 20–25 V D. Any of the above

Answer: Option D
D. 0.025
18. How many valence electrons does a silicon atom Answer: Option A
have?
A. 1 22. In which of the following is the light intensity
measured?
B. 2 A. Candela
C. 3 B. Efficacy
D. 4 C. Flux
Answer: Option D
D. Illumination
19. What is the resistor value of an ideal diode in the Answer: Option A
region of conduction?
A. 0 23. Calculate ID if RD = 30 and VD = 0.84 V.
A. 28 mA
B. 5k
B. 0.028 mA
C. Undefined
C. 2.8 A
D. Infinity
D. 280 A
Answer: Option A
Answer: Option A
20. Calculate the power dissipation of a diode having
ID = 40 mA.
24. Which of the following elements is most frequently
A. 28 mW used for doping pure Ge or Si?
A. Boron
B. 28 W
B. Gallium
C. 280 mW
C. Indium
D. Undefined
Answer: Option A D. All of the above
Answer: Option D
21. Calculate static resistance RD of a diode having ID =
30 mA and VD = 0.75 V.
A. 25
25. Calculate the temperature coefficient in %/° C of a
10-V nominal Zener diode at 25° C if the nominal
B. 40 voltage is 10.2 V at 100° C.
A. 0.0238
C. 0.04
B. 0.0251
C. 0.0267 B. simplified
D. 0.0321 C. piecewise-linear
Answer: Option C Answer: Option B
26. In general, LEDs operate at voltage levels from 30. What is the value of the transition capacitance for a
________ V to ________ V. silicon diode when VD = 0? (Choose the best
answer.)
A. 1.0, 3.0
A. 1 pF
B. 1.7, 3.3
B. 3 pF
C. 0.5, 4.0
C. 5 pF
D. 10 pF
Answer: Option B
Answer: Option B
7. Determine the nominal voltage for the Zener diode

at a temperature of 120° C if the nominal voltage is 31. Which of the following ratings is true?
5.1 volts at 25° C and the temperature coefficient is
Si diodes have higher PIV and narrower
0.05%/° C. A.
temperature ranges than Ge diodes.
A. 4.6 V
Si diodes have higher PIV and wider

B. 4.86 V B.
C. 5.1 V Si diodes have lower PIV and narrower

C.
D. 5.34 V
Si diodes have lower PIV and wider
D.
Answer: Option D temperature ranges than Ge diodes.
Answer: Option B
28. What is the maximum power rating for LEDs?
A. 150 mW
32. The ideal diode is a(n) ________ circuit in the region
of nonconduction.
B. 500 mW
A. open
C. 1W
B. short
D. 10 W Answer: Option A
Answer: Option A
33. Which capacitance dominates in the forward-bias
region?
29. The ________ diode model is employed most A. Diffusion
frequently in the analysis of electronic systems.
A. ideal device
B. Transition
C. Depletion D. None of the above
Answer: Option B
Answer: Option A 3. What type of diode circuit is used to clip off portions
of signal voltages above or below certain levels?
34. In what state is a silicon diode if the voltage drop A. clipper or limiter
across it is about 0.7 V?
A. No bias B. clamper
B. Forward bias C. IC voltage regulator
C. Reverse bias D. none of the above
Answer: Option A
D. Zener region
Answer: Option B 4. Each diode in a center-tapped full-wave rectifier is

________ -biased and conducts for ________ of the
input cycle.
A. forward, 90º
DIODE APPLICATION
B. reverse, 180º
1. Determine the total discharge time for the capacitor
in a clamper having C = 0.01 F and R = 500 k .
C. forward, 180º
A. 5 ms
D. reverse, 90º
B. 25 ms
Answer: Option C
C. 2.5 ms
5. What is the voltage measured from the negative

D. 50 ms terminal of C4 to the negative terminal of the
transformer?
Answer: Option B
2. Which element dictates the maximum level of

source voltage?
A. –10 V
B. –20 V
C. 10 V
A. VZ
D. 20 V
B. IZM
Answer: Option B
C. IZ
6. The output frequency of a full-wave rectifier is 9.
________ the input frequency.
A. one-half
B. equal to
C. twice
A. 25 V
D. one-quarter
B. 15 V
Answer: Option C
C. –25 V
7. PIV is which of the following?
A. peak input voltage D. –15 V
Answer: Option B
B. peak inverse voltage
C. peak immediate voltage 10. In a regulated supply, what term describes how
much change occurs in the output voltage for a
given change in the input voltage?
D. positive input voltage A. load regulation
Answer: Option B
B. voltage regulator
8. Determine the peak value of the current through the

load resistor. C. line regulation
D. ripple voltage
Answer: Option C
11. A short circuit has a ________ drop across its

terminals, and the current is limited only by the
surrounding network.
A. 5V
A. 2.325 mA
B. 0V
B. 5 mA
C. 1V
C. 1.25 mA
D.
D. 0 mA Answer: Option B
Answer: Option A
12. Determine the peak for both half cycles of the output
waveform.
Determine the peak value of the output waveform.
B. clamper
C. IC voltage regulator
Answer: Option B
A. 16 V, –4 V
16. Determine ID2.
B. 16 V, 4 V
C. –16 V, 4 V
D. –16 V, –4 V
Answer: Option A
13. What is the peak inverse voltage across each diode

in a voltage doubler? A. 6.061 mA
A. Vm
B. 0.7 mA
B. 2Vm
C. 3.393 mA
C. 0.5Vm
D. 3.571 mA
D. 0.25Vm Answer: Option C
Answer: Option B
17. What is the logic function of this circuit?
14. What is the VRRM (PIV rating) for the 1N4001 rectifier
diode?
A. 50 V
B. 100 V
C. 200 V
D. 400 V

A. Positive logic AND gate
Answer: Option A
B. Positive logic OR gate

15. What type of diode circuit is used to add or restore a
dc level to an electrical signal?
A. clipper or limiter C. Negative logic AND gate
20.
D. Negative logic OR gate
Answer: Option A
18. In a regulated supply, what term describes how

much change occurs in the output voltage over a
certain range of load current values, from minimum
to maximum current?
A. line regulation
B. voltage regulator A. Full-wave rectifier
C. current regulator B. Half-wave rectifier
D. load regulation C. Clipper
Answer: Option D
D. Clamper
19. Determine the average value of the current through Answer: Option A
the load resistor.
21. What is the PIV for each diode in a full-wave center-

tapped rectifier? Note: Vp(out) = peak output voltage.
A. Vp(out) – 0.7 V
B. Vp(out) + 0.7 V
C. 2Vp(out) – 0.7 V
A. 2.5 mA D. 2Vp(out) + 0.7 V
Answer: Option D
B. 0 mA
22. Determine ID2.

C. 1.37 mA
D. 1.479 mA
Answer: Option D
What best describes the circuit?
A. 29.40 mA
B. 30.30 mA
C. 14.70 mA
D. None of the above D. 120 Hz
Answer: Option C Answer: Option C
23. Determine the current level if E = 15 V and R = 3 k 26. How many terminals do the 7800 series fixed
. positive voltage regulators have?
A. 2
B. 3
C. 4
A. 0A
D. 5
B. 4.76 mA

C. 5 mA
Answer: Option B
D. 5A
27. An open circuit can have any voltage across its
Answer: Option B terminals, but the current is always ________.
A. 5A
24. Determine V2.
B. 0A
C. 1A
D.
Answer: Option B
A. 3.201 V
28. Determine ID1.
B. 0V
C. 4.3 V
D. 1.371 V
Answer: Option D A. 0 mA
25. If the ac supply is 50 Hz, what will be the ripple B. 29.40 mA

frequency out of the full-wave rectifier?
A. 50 Hz C. 14.70 mA
B. 60 Hz D. 14.09 mA
Answer: Option A
C. 100 Hz
29. Refer to the figure given below. Which diode
D. Clamper
arrangement will supply a negative output voltage?
Answer: Option C
32. Determine the value of the load resistor.
A. RL = 5 k
A. a B. RL = 5.5 k
B. b C. RL = 6 k
C. c D. None of the above
D. d Answer: Option B
Answer: Option C
33. Use the information provided here to determine the
value of IDQ.
30. A silicon diode in a half-wave rectifier has a barrier
potential of 0.7 V. This has the effect of
A. reducing the peak output voltage by 0.7 V.
B. increasing the peak output voltage by 0.7 V.
C. reducing the peak input voltage by 0.7 V.
D. no effect.
Answer: Option A
A. 0 mA
31. What best describes the circuit?
B. 4.3 mA
C. 5 mA
D. 10 mA
A. Full-wave rectifier
Answer: Option B
B. Half-wave rectifier
34. If the ac supply is 60 Hz, what will be the ripple
frequency out of the half-wave rectifier?
C. Clipper
A. 30 Hz
B. 50 Hz
C. 60 Hz
D. 120 Hz A. one of the diodes is open.
Answer: Option C B. a diode is shorted.
35. Calculate IL and IZ. C. an open transformer secondary.
D. the filter capacitor is shorted.
E. no trouble exists.
Answer: Option D
A. 2 mA, 0 mA 38. In a particular problem, which mode has the highest

level of IDQ?
B. 4 mA, 2 mA A. Ideal
C. 2 mA, 2 mA B. Approximate equivalent
D. 2 mA, 4 mA C. Exact mode using characteristic curve
Answer: Option D D. None of the above
36. In the operation of a half-wave rectifier with a Answer: Option A

capacitor-input filter, the ripple factor can be lowered
by ________ the value of the filter capacitor or
________ the load resistors. 39. Which diode(s) has (have) a zero level current and
voltage drop in the ideal model?
A. decreasing, decreasing
A. Si
B. decreasing, increasing
B. Ge
C. increasing, decreasing
C. Both Si and Ge
D. increasing, increasing
D. Neither Si nor Ge
Answer: Option D
Answer: Option C
37. Refer to the figure given below. The probable

trouble, if any, indicated by these voltages is Determine Vo if E1 = E2 = 10 V.
40. 43. Determine ID.
A. 0 mA
B. 1.893 mA
C. 2.036 mA
A. 9.3 V
D. 2.143 mA
B. 10 V
Answer: Option B
C. –10 V
44. What best describes the circuit?
D. 0V
Answer: Option B
41. The output frequency of a half-wave rectifier is

________ the input frequency. A. Full-wave rectifier
A. one-half
B. Half-wave rectifier
B. twice
C. Clipper
C. equal to
D. Clamper
Answer: Option B
Answer: Option C
45. In a voltage-multiplier circuit, the number of diodes
is directly proportional to the multiplicative voltage
42. A diode is in the "________" state if the current
factor.
established by the applied sources is such that its
direction matches that of the arrow in the diode A. True
symbol, and VD ≥ 0.7 V for Si and VD ≥ 0.3 V for Ge.
A. off B. False
B. on Answer: Option A
C. neutral 46. Rectifiers are commonly used in battery chargers.

A. True
D. quiescent
B. False
Answer: Option B
Answer: Option A
50. What is the logic function of this circuit?
47. List the categories of clippers.

A. Series
B. Parallel
C. Series and parallel
Answer: Option C A. Positive logic AND gate
48. A silicon diode has a voltage to ground of –117 V B. Positive logic OR gate
from the anode. The voltage to ground from the
cathode is –117.7 V. The diode is
C. Negative logic AND gate
A. open.
D. Negative logic OR gate

B. shorted.
Answer: Option B
C. forward-biased.
51. Determine the current through each diode if E 1 =
D. reverse-biased. E2 = 0 V.
Answer: Option C
49. Which diode arrangement will supply a positive

output voltage?
A. 4.65 mA
B. 9.3 mA
A. a
C. 18.6 mA
B. b
D. 0.7 mA
C. c Answer: Option A
D. d
52. Refer to the figure given below. If the voltmeter
across the transformer reads 0 V, the probable
Answer: Option A trouble, if any, would be
B. Undefined
C. Equal to IRL
D. IZM
A. one of the diodes is open. Answer: Option D
B. a diode is shorted. 55. In a voltage regulator network with fixed RL and R,

what element dictates the minimum level of source
voltage?
C. an open transformer secondary.
A. VZ
D. the filter capacitor is shorted.

B. IZ
E. no trouble exists.
C. IZM
Answer: Option C
Answer: Option A
53. Determine the voltage across the resistor.
TRANSISTOR BIAS CIRCUITS

1. Clipping is the result of
A. the input signal being too large.
A. 0V B. the transistor being driven into saturation.
B. 0.09 V C. the transistor being driven into cutoff.
C. 0.2 V D. all of the above
D. 0.44 V Answer: Option D
Answer: Option A
2. Which transistor bias circuit arrangement provides
good stability using negative feedback from collector
54. With this Zener diode in its "on state," what is the to base?
level of IZ for the maximum load resistance? A. base bias
B. collector-feedback bias
C. voltage-divider bias
D. emitter bias
A. 0 mA Answer: Option B
3. Refer to the given figure. The most probable cause of
C. a short from collector to emitter.
trouble, if any, from these voltage measurements is
D. no problems.
Answer: Option D
5. What is the dc input resistance at the base of a

BJT?
A. DCRC
B. DC·( )
C. DC·re′
D. DCRE
Answer: Option D
A. the base-emitter junction is open.
6. Which transistor bias circuit provides good Q-point

B. RE is open. stability with a single-polarity supply voltage?
A. base bias
D. no problems.
Answer: Option A
D. emitter bias
4. Refer to the given figure. The most probable cause
of trouble, if any, from these voltage measurements Answer: Option C
is
7. Refer to this figure. In the voltage-divider biased npn

transistor circuit, if R2 opens, the transistor is
B. RE is open.
10. Refer to this figure. The value of I B is
A. 53 A.
A. saturated. B. 50 A.
B. cutoff. C. 50 mA.
C. nonconducting. D. 53 mA.
8. Ideally, for linear operation, a transistor should be 11. What is the Q-point for a fixed-bias transistor with
biased so that the Q-point is IB = 75 A, DC = 100, VCC = 20 V, and RC = 1.5 k
A. near saturation. ?
A. VC = 0 V
B. near cutoff.
B. VC = 20 V
C. where IC is maximum.
C. VC = 8.75 V
D. halfway between cutoff and saturation.
D. VC = 11.25 V
Answer: Option D
Answer: Option C
9. The most stable biasing technique used is the
A. voltage-divider bias. 12. Emitter bias requires
A. only a positive supply voltage.
B. base bias.
B. only a negative supply voltage.
C. emitter bias.
C. no supply voltage.
D. collector bias.
D. both positive and negative supply voltages.
Answer: Option A
Answer: Option D
13.
Refer to this figure. The value of DC is D. 2.5 V
Answer: Option D

transistor circuit, if RC opens, the transistor is
A. 5.3.
B. 53.
C. 94.
D. 100.
Answer: Option D A. saturated.
14. Refer to this figure. Assume that I C IE. Find VE. B. cutoff.
C. nonconducting.
Answer: Option C
16. Which transistor bias circuit arrangement has poor

stability because its Q-point varies widely with DC?
A. base bias
D. emitter bias
Answer: Option A
A. 5V
17. What is the most common bias circuit?

B. 10 V
A. base
C. 15 V
B. collector
19. Refer to this figure. Determine IC.
C. emitter
D. voltage-divider
Answer: Option D
18. Refer to the given figure. The most probable cause

of trouble, if any, from these voltage measurements
would be
A. 5 A
B. 5 mA
C. 0 mA

D. 10 mA
B. RE is open. Answer: Option B

20. At saturation the value of VCE is nearly ________,
and IC = ________.
D. no problems. A. zero, zero
Answer: Option B
B. VCC, IC(sat)
C. zero, I(sat)
D. VCC, zero
Answer: Option C
21. Voltage-divider bias has a relatively stable Q-point,

as does
A. base bias.
B. collector-feedback bias.
C. both of the above

D. none of the above C. at no time.
Answer: Option B
only if the base current is much larger than
D. the current through R2 (the lower bias
22. Refer to this figure. Assume IC IE. Determine the resistor).
value of RC that will allow VCE to equal 10 V.
Answer: Option B
25. Refer to this figure. The value of I C is
A. 10 A.
A. 1k
B. 10 mA.
B. 1.5 k
C. 5 mA.
C. 2k
D. 50 mA.
D. 2.5 k
Answer: Option C
Answer: Option B
26. Which transistor bias circuit arrangement provides

23. The linear (active) operating region of a transistor good Q-point stability, but requires both positive and
lies along the load line below ________ and above negative supply voltages?
________.
A. base bias
A. cutoff, saturation
B. saturation, cutoff
Answer: Option B C. voltage-divider bias
D. emitter bias
24. The input resistance of the base of a voltage-divider
biased transistor can be neglected
Answer: Option D
A. at all times.
only if the base current is much smaller than

B. the current through R2 (the lower bias
resistor).
27. Refer to this figure. Calculate the current I2.
C. nonconducting.
Answer: Option B
29.
Changes in DC result in changes in
A. I C.
B. VCE.
C. the Q-point.
D. all of the above
Answer: Option D
A. 32 mA
B. 3.2 mA
C. 168 A
D. 320 A
Answer: Option D

transistor circuit, if R1 opens, the transistor is
DC BIASING BJTs
1. Calculate VCE.
A. –4.52 V
A. saturated.
B. 4.52 V
B. cutoff.
C. –9 V D. 20 V
Answer: Option A
D. 9V
5. In a fixed-bias circuit, which one of the stability
Answer: Option B factors overrides the other factors?
2. For the BJT to operate in the active (linear) A. S(ICO)
region, the base-emitter junction must be
________-biased and the base-collector junction
B. S(VBE)
must be ________-biased.
A. forward, forward
C. S( )
B. forward, reverse
D. Undefined
C. reverse, reverse
Answer: Option C
D. reverse, forward 6. Calculate the voltage across the 91 k resistor.
Answer: Option B
3. The cutoff region is defined by I B ________ 0 A.

A. >
B. <
C.
D.
Answer: Option C
A. 18 V
4. Determine the reading on the meter when V CC = B. 9.22 V

20 V, RC = 5 k , and IC = 2 mA.
C. 3.23 V
Answer: Option C
Calculate the value of VCEQ.
A. 10 V
B. –10 V
C. 0.7 V
7.
A. 20
B. 50
C. 75
D. 116
Answer: Option D
10. Determine the change in IC from 25ºC to 175ºC for

the transistor defined in this table for fixed-bias
with RB = 240 k and = 100 due to the S(VBE)
stability factor.
A. 8.78 V
B. 0V
C. 7.86 V
D. 18 V
Answer: Option C A. 145.8 A
8. Calculate the approximate value of the maximum

power rating for the transistor represented by the B. 145.8 nA
output characteristics of Figure 4.1?
A. 250 mW C. –145.8 A
B. 170 mW D. –145.8 nA
C. Answer: Option A
50 mW
11. Which of the following is (are) related to an
D. 0 mW emitter-follower configuration?
A. The input and output signals are in phase.
Answer: Option B
9. B. The voltage gain is slightly less than 1.

For what value of does the transistor enter the
saturation region?
C. Output is drawn from the emitter terminal.
D. All of the above
Answer: Option D
12. At what region of operation is the base-emitter

junction forward biased and the base-collector
junction reverse biased?
A. Saturation
15. For an "on" transistor, the voltage V BE should be
B. Linear or active
in the neighborhood of 0.7 V.
A. True
C. Cutoff
B. False
Answer: Option A
Answer: Option B
16. In a voltage-divider circuit, which one of the
13. You can select the values for the emitter and stability factors has the least effect on the device
collector resistors from the information that is at very high temperature?
provided for this circuit.
A. S(ICO)
B. S(VBE)
C. S( )
D. Undefined
Answer: Option C
17. Which of the following is (are) a stability factor?

A. S(ICO)
A. True
B. S(VBE)
B. False
C. S( )
Answer: Option B
D. All of the above
14. In the case of this circuit, you must assume that
VE = 0.1·VCC in order to calculate RC and RE.
Answer: Option D
18. Calculate ICsat.
A. True
A. 35.29 mA
B. False
B. 5.45 mA
Answer: Option A
C. 1.86 mA B. 16.35 V
D. 4.72 mA C. −3.65 V
Answer: Option D
D. 10 V
19. Calculate the storage time in a transistor switching Answer: Option C

network if toff is 56 ns, tf = 14 ns, and tr = 20 ns.
A. 70 ns 22. Which of the following currents is nearly equal to
each other?
B. 42 ns A. IB and IC
C. 36 ns B. IE and IC
D. 34 ns C. IB and IE
Answer: Option B
D. IB, IC, and IE
20. Determine ICQ at a temperature of 175º C if ICQ = 2 Answer: Option B

mA at 25º C for RB / RE = 20 due to the S( )
stability factor. 23. Which of the following voltages must have a
A. 2.417 mA negative level (value) in any npn bias circuit?
A. VBE
B. 2.392 mA
B. VCE
C. 2.25 mA
C. VBC
D. 2.58 mA
Answer: Option A
Answer: Option C
21. Calculate ETh for this network.
24. Determine the values of VCB and IB for this circuit.
A. 1.4 V, 59.7 A
B. –1.4 V, 59.7 A
A. −12.12 V
C. –9.3 V, 3.58 A
Answer: Option A
D. 9.3 V, 3.58 A
Answer: Option A 28. The total time required for the transistor to switch
from the "off" to the "on" state is designated as
tonand defined as the delay time plus the time
25. Use this table to determine the change in I C from element.
25ºC to 175ºC for RB / RE = 250 due to the S(ICO)
stability factor. Assume an emitter-bias A. True
configuration.
B. False
Answer: Option A
29.
Calculate Rsat if VCE = 0.3 V.
A. 140.34 nA
B. 140.34 A
C. 42.53 nA
D. 0.14034 nA
Answer: Option B
26. For the typical transistor amplifier in the active

region, VCE is usually about ________ % to A. 49.2
________ % of VCC.
A. 10, 60
B. 49.2 k
B. 25, 75
C. 49.2 m
C. 40, 90
D. 49.2 M
Answer: Option B
Answer: Option A
27. For the BJT to operate in the saturation region, the

base-emitter junction must be ________-biased and 30.
The ratio of which two currents is represented by
the base-collector junction must be ________- ?
biased.
A. IC and IE
A. forward, forward
B. IC and IB
B. forward, reverse
C. IE and IB
C. reverse, reverse

D. reverse, forward
Answer: Option B
31. Which of the following is assumed in the 34. Which of the following is (are) the application(s) of a
approximate analysis of a voltage divider circuit? transistor?
A. IB is essentially zero amperes. A. Amplification of signal
R1 and R2 are considered to be series B. Switching and control

B.
elements.
C. Computer logic circuitry
C. RE 10R2
D. All of the above
D. All of the above
Answer: Option D
Answer: Option D
35. It is desirable to design a bias circuit that is
independent of the transistor beta.
32. The saturation region is defined by V CE ________
VCEsat. A. True
A. >
B. False
B. <
Answer: Option A
C.
FIELD-EFFECT TRANSISTORS
D.
1. For a JFET, the value of VDS at which ID becomes
essentially constant is the
Answer: Option C
A. pinch-off voltage.
33. Calculate VCE.

B. cutoff voltage.
C. breakdown voltage.
D. ohmic voltage.
Answer: Option A
2. The ________ has a physical channel between the

drain and source.
A. D-MOSFET
A. 4.52 V B. E-MOSFET
B. –4.52 V C. V-MOSFET
Answer: Option A
C. 4.48 V
Refer to figure given below. Calculate the value of

D. –4.48 V
VDS.
Answer: Option B
3.
A. –3 V
B. –6 V
C. 3V
D. 6V
Answer: Option C
6. Refer to the given figure. ID = 6 mA. Calculate the

A. 0V value of VDS.
B. 2V
C. 4V
D. –2 V
Answer: Option B
4. Refer to figure shown below. Determine the value

of VS.
A. –9 V
B. 9V
C. 6V
D. –3 V
Answer: Option A
7. What type(s) of gate-to-source voltage(s) can a

depletion MOSFET (D-MOSFET) operate with?
A. zero
A. 20 V
B. positive
B. 8V
C. negative
C. 6V
D. any of the above

D. 2V
Answer: Option D
Answer: Option C
8. Midpoint bias for a D-MOSFET is ID = ________,
5. A self-biased n-channel JFET has a VD = 6 V. obtained by setting VGS = 0.
VGS = –3 V. Find the value of VDS.
A. IDSS / 2
B. IDSS / 3.4
C. IDSS
Answer: Option C
9. On the drain characteristic curve of a JFET for

VGS = 0, the pinch-off voltage is
A. below the ohmic area.
between the ohmic area and the constant

B.
current area.
A. –20 V
between the constant current area and the
C.
breakdown region.
B. –8 V
D. above the breakdown region.

C. –6 V
Answer: Option B
D. –2 V
value of VDS. Answer: Option C
12. Which of the following devices has the highest

input resistance?
A. diode
B. JFET
C. MOSFET
D. bipolar junction transistor
Answer: Option C
A. –6 V 13. The value of VGS that makes ID approximately

zero is the
A. pinch-off voltage.
B. 6V
B. cutoff voltage.
C. 12 V
C. breakdown voltage.
D. –3 V
Answer: Option B D. ohmic voltage.
11. Refer to figure given below. Determine the value Answer: Option B
of VGS.
14. The JFET is always operated with the gate-
source pn junction ________ -biased.
A. forward A. a depletion MOSFET.
B. reverse B. an enhancement MOSFET.
Answer: Option B 18. C. a VMOSFET.

15. Identify the p-channel D-MOSFET.
either a depletion or an enhancement
D.
MOSFET.
Answer: Option D
19. Refer to figure show below. Calculate the value of

V D.
A. a
B. b
C. c
D. d
Answer: Option B
16. All MOSFETs are subject to damage from

electrostatic discharge (ESD).
A. true
B. false A. 20 V
Answer: Option A B. 8V
17. Identify the n-channel D-MOSFET.
C. 6V
D. 2V
Answer: Option B
20. What three areas are the drain characteristics of a

A. JFET (VGS = 0) divided into?
a
A. ohmic, constant-current, breakdown
B. b
B. pinch-off, constant-current, avalanche
C. c
C. ohmic, constant-voltage, breakdown
D. d
Answer: Option A
Answer: Option A 21. In a self-biased JFET circuit, if VD = VDD then ID =
________.
A dual-gated MOSFET is
25.
A. 0
cannot be determined from information

B.
above
Answer: Option A
22. The resistance of a JFET biased in the ohmic A. a

region is controlled by
A. VD. B. b
B. VGS. C. c
C. VS. D. d
D. VDS. Answer: Option D
26. Refer to figure shown below. What is the value of

Answer: Option B IG?
23. High input resistance for a JFET is due to
A. a metal oxide layer.
B. a large input resistor to the device.
C. an intrinsic layer.
the gate-source junction being reverse-

D.
biased.
Answer: Option D
24. For a JFET, the change in drain current for a

given change in gate-to-source voltage, with the
drain-to-source voltage constant, is
A. 6 mA
A. breakdown.
B. 4 mA
B. reverse transconductance.
C. 2 mA
C. forward transconductance.
D. 0 mA
D. self-biasing.
Answer: Option D
Answer: Option C
27. A JFET data sheet specifies VGS(off) = –6 V and
Identify the p-channel E-MOSFET. IDSS = 8 mA. Find the value of ID when VGS = –3 V.
A. 2 mA
B. 4 mA
C. 8 mA
Answer: Option A
28. A JFET data sheet specifies VGS(off) = –10 V and

IDSS = 8 mA. Find the value of ID when VGS = –3 V.
A. 2 mA
B. 1.4 mA
C. 4.8 mA
A. 13.2 V
D. 3.92 mA
B. 10 V
Answer: Option D
C. 6.8 V
29. Identify the n-channel E-MOSFET.
D. 0V
Answer: Option C
DC BIASING – FETs
1. Calculate the value of VDS.
A. a
B. b
C. c
D. d
Answer: Option C
30. If VD is less than expected (normal) for a self-

biased JFET circuit, then it could be caused by
a(n)
A. open RG.
A. 0V
B. open gate lead.

B. 0.35 V
C. FET internally open at gate.

C. 3.8 V
D. all of the above

D. 33.5 V
Answer: Option D
Answer: Option C
value of VDS. Calculate the value of VDS.
2. 4. For what value of RD is the voltage across VDS zero?
A. 0V A. 2.400 k
B. 8V B. 5.167 k
C. 4.75 V C. 6.167 k
D. 16 V D. 6.670 k
Answer: Option D Answer: Option B
3. Given the values of VDQ and IDQ for this circuit, 5. For the FET, the relationship between the input and
determine the required values of RD and RS. output quantities is ________ due to the ________
term in Shockley's equation.
A. nonlinear, cubed
B. linear, proportional
C. nonlinear, squared
Answer: Option C
6. For what value of R2 is VGSQ equal to 1 V?
A. 2k ,2k
B. 1k , 5.3 k
C. 3.2 k , 400
D. 2.5 k , 5.3 k
A. 10 M
Answer: Option C
B. 100 M
C. 110 M
D. 220 M
Answer: Option B
7. Which of the following is (are) true of a self-bias

configuration compared to a fixed-bias
configuration?
A. One of the dc supplies is eliminated.
B. A resistor RS is added.
A. 2.4 k
C. VGS is a function of the output current I D.

B. 5k
D. All of the above

C. 6.2 k
Answer: Option D
8. The input controlling variable for a(n) ________ is a
current level and a voltage level for a(n) ________. Answer: Option C
A. BJT, FET
11. On the universal JFET bias curve, the vertical scale
labeled ________ can, in itself, be used to find the
B. FET, BJT solution to ________ configurations.
A. m, fixed-bias
C. FET, FET
B. M, fixed-bias
D. BJT, BJT
Answer: Option A C. M, voltage-bias
D. m, voltage-bias
9. Through proper design, a ________ can be
introduced that will affect the biasing level of a
voltage-controlled JFET resistor. Answer: Option A
A. photodiode
Calculate the value of RS. Assume VGSQ = −2V.
B. thermistor
C. laser diode
D. Zener diode
Answer: Option B
10. For what value of RS can the depletion-type

MOSFETs operate in enhancement mode?
12. 14. At what value of RS does the circuit switch from
depletion mode to enhancement mode?
A. 0k
B. 1.68 k
A. 250
C. 6.81 k
B. 500
D. 8.5 k
Answer: Option B C. 10 M

13. Calculate the value of RD.
Answer: Option A
15. Which of the following current equations is true?

A. IG = ID
B. IG = IS
C. ID = IS
D. IG = ID = IS
A. 2k
Answer: Option C
B. 3k
Calculate VDSQ.
C. 3.5 k
D. 4.13 k
Answer: Option D
16. Answer: Option A
18. Which of the following represents the voltage level

of VGS in a self-bias configuration?
A. VG
B. VGS(off)
C. VS
D. VP
Answer: Option C
19. The self-bias configuration eliminates the need for

A. 1.0 V two dc supplies.
A. True
B. 1.50 V
B. False
C. 2.56 V
Answer: Option A
D. 3.58 V
20. Which of the following is a false statement regarding
Answer: Option D the dc load line when comparing self-bias and
voltage-divider configurations?
17. Calculate the value of VDS. A. Both are linear lines.
B. Both cross the origin.
C. Both intersect the transfer characteristics.
Both are obtained by writing Kirchhoff's

D.
voltage law (KVL) at the input side loop.
Answer: Option B
Calculate VDS.
A. –3 V
B. 3V
C. –4 V
D. 4V
21. 23.
A. 0 V, 0 V
B. 5 V, 5 V
A. 0V
C. 10 V, 10 V
B. 6V
D. 20 V, 20 V
C. 16 V Answer: Option A
D. 11 V
24. Depletion-type MOSFETs do not permit operating
points with positive values of VGS and levels of IDthat
Answer: Option A exceed IDSS.
A. True
22. For the noninverting amplifier, one of the most
important advantages associated with using a JFET
B. False
for control is the fact that it is ________ rather than
________ control.
Answer: Option B
A. dc, ac
Calculate the value of VDSQ.

B. ac, dc
Answer: Option A
What are the voltages across RD and RS?

25. 27.
A. 0V A. 23.0 V
B. 20 V B. 17.0 V
C. 30 V C. 4.6 V
D. 40 V D. 12.4 V
Answer: Option D Answer: Option B
26. What is the approximate current level in the gate of 28. Calculate VCE.
an FET in dc analysis?
A. 0A
B. 0.7 mA
C. 0.3 mA
D. Undefined
Answer: Option A
Calculate VD.
A. 0V
B. 2V
C. 3V
32. Which of the following describe(s) the difference(s)
D. 5.34 V
between JFETs and depletion-type MOSFETs?
Answer: Option D VGS can be positive or negative for the
A.
depletion-type.
29. Seldom are current levels measured since such

maneuvers require disturbing the network structure B. ID can exceed IDSS for the depletion-type.
to insert the meter.
A. True The depletion-type can operate in the
C.
enhancement mode.
B. False
D. All of the above
Answer: Option A
Answer: Option D
30. In the design of linear amplifiers, it is good design

practice to choose operating points that do not 33. Determine the value of VDSQ.
crowd the saturation level or cutoff regions.
A. True
B. False
Answer: Option A
31. What is the new value of RD when there is 7 V

across VDS?
A. 3.5 V
B. 4.86 V
C. 7.14 V
D. 10 V
Answer: Option A
34. Specification sheets typically provide the value of

the constant k for enhancement-type MOSFETs.
A. 3k A. True
B. 3.3 k B. False
Answer: Option B
C. 4k
D. 5k
Answer: Option B
35.
Determine the quiescent values of I D and VGS.
A. 1.2 mA, –1.8 V
B. 1.5 mA, –1.5 V
C. 2.0 mA, –1.2 V
D. 3.0 mA, –0.8 V
Answer: Option B

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SEMICONDUCTORS 5.

As the forward current through a silicon diode

C. the diode is internally shorted. 6. The movement of free electrons in a conductor

B. 4 7. For a forward-biased diode, the barrier potential

8. The wide end arrow on a schematic indicates the

C. cathode An intrinsic semiconductor material is a poor

D. decreased, decreases B. short, open

B. a reverse-biased diode. E. none of the above

D. a forward-biased diode. 18. What factor(s) do(es) the barrier potential of a pn

B. neutrons. 24. The forward voltage across a conducting silicon

D. all of the above B. 1.7 V.

20. Reverse breakdown is a condition in which a diode D. 0.7 V.

A. is subjected to a large reverse voltage. Answer: Option D

C. has no current flowing at all.

21. There is a small amount of current across the barrier C. resistive

the value of dc voltages for the device to

D. the status of the diode.

2. Zener diodes with breakdown voltages less than 5 V

C. remain the same.

7. What kind of diode is formed by joining a doped

11. LEDs are made out of

D. silicon and germanium, but not gallium.

14. An LED is forward-biased. The diode should be on,

B. the series resistor is too small.

D. remain the same, decrease

19. An 8.2 V zener has a resistance of 5 . The actual

D. d 20. What diode operates only with majority carriers?

21. Refer to this figure. Which symbol is correct for a

25. Zener diodes with breakdown voltages greater than

E. none of the above

29. A laser diode normally emits

30. A varactor is a pn junction diode that always

4. What is the ratio of IC to IB?

D. either DC or hFE, but not DC

A. 0.25 mA 5. For normal operation of a pnp BJT, the base must

11. Refer to this figure. The value of V CE is:

7. When a transistor is used as a switch, it is stable in

8. The term BJT is short for

9. For a silicon transistor, when a base-emitter junction

A. is fixed for any particular transistor.

B. varies with temperature.

C. varies with IC.

D. varies with temperature and IC.

A. npn and pnp

D. either /( + 1) or DC, but not

D. none of the above C. TO-39

E. all of the above

D. collector, emitter, base B. open bias resistor(s)

B. μA 29. Refer to this figure. Determine the minimum value of

25. A 35 mV signal is applied to the base of a properly

B. Digital display meter (DDM)

D. All of the above

4. For what kind of amplifications can the active region

BJT DEVICES Answer: Option D

1. How much is the base-to-emitter voltage of a

B. Exceeding 100 k , 100 to a few k B. False

12. Which of the following is (are) the terminal(s) of a

D. All of the above

9. What is (are) the component(s) of electrical

C. Small-signal characteristics A. 100

D. All of the above B. 106

10. In which region are both the collector-base and D. 400

B. Cutoff 14. Which of the following configurations can a