® TDA2006

12W AUDIO AMPLIFIER

DESCRIPTION
The TDA2006 is a monolithic integrated circuit in
Pentawatt package, intended for use as a low
frequency class "AB" amplifier. At ±12V, d = 10 %
typically it provides 12W output power on a 4Ω load
and 8W on a 8Ω . The TDA2006 provides high
( s )
ct
output current and has very low harmonic and
cross-over distortion. Further the device incorpo-
rates an original (and patented) short circuit protec-
d
PENTAWATTu
tion system comprising an arrangement for
automatically limiting the dissipated power so as to
r o
P
ORDERING NUMBERS : TDA2006V
keep the working point of the output transistors TDA2006H
within their safe operating area. A conventional
thermal shutdown system is also included. The
e t e
TDA2006 is pin to pin equivalent to the TDA2030.
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TYPICAL APPLICATION CIRCUIT
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 TDA2006

SCHEMATIC DIAGRAM

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P r
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ABSOLUTE MAXIMUM RATINGS
o l
Symbol Parameter
b s Value Unit
Vs Supply Voltage

- O ± 15 V
Vi
Vi
Input Voltage
Differential Input Voltage
(s ) Vs
± 12 V

ct
Io Output Peak Current (internaly limited) 3 A
Ptot
Tstg, Tj
d u
Power Dissipation at Tcase = 90 °C
Storage and Junction Temperature
20
– 40 to 150
W
°C

r o
THERMAL DATA
e P
Symbol

l e t Parameter Value Unit

°C/W
o
Rth (j-c) Thermal Resistance Junction-case Max 3

b s
OPIN CONNECTION

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 TDA2006

ELECTRICAL CHARACTERISTICS
(refer to the test circuit ; VS = ± 12V, Tamb = 25oC unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Vs Supply Voltage ±6 ± 15 V
Id Quiescent Drain Current Vs = ± 15V 40 80 mA
Ib Input Bias Current Vs = ± 15V 0.2 3 µA
VOS Input Offset Voltage Vs = ± 15V ±8 mV
IOS Input Offset Current Vs = ± 15V ± 80 nA

(s)
VOS Output Offset Voltage Vs = ± 15V ± 10 ± 100 mV

ct
Po Output Power d = 10%, f = 1kHz W
RL = 4Ω 12
RL = 8Ω 6

d u 8
d Distortion Po = 0.1 to 8W, RL = 4Ω, f = 1kHz
Po = 0.1 to 4W, RL = 8Ω, f = 1kHz
r o 0.2
0.1
%
%
Vi Input Sensitivity Po = 10W, RL = 4Ω, f = 1kHz
Po = 6W, RL = 8Ω, f = 1kHz
e P 200
220
mV
mV
B Frequency Response (– 3dB) Po = 8W, RL = 4Ω
l e t 20Hz to 100kHz
Ri Input Resistance (pin 1) f = 1kHz
s o 0.5 5 MΩ
Gv Voltage Gain (open loop) f = 1kHz

O b 75 dB

)-
Gv Voltage Gain (closed loop) f = 1kHz 29.5 30 30.5 dB
eN Input Noise Voltage B (– 3dB) = 22Hz to 22kHz, RL = 4Ω 3 10 µV
iN Input Noise Current
t ( s
B (– 3dB) = 22Hz to 22kHz, RL = 4Ω 80 200 pA

c
du
SVR Supply Voltage Rejection RL = 4Ω, Rg = 22kΩ, fripple = 100Hz (*) 40 50 dB

ro
Id Drain Current Po = 12W, RL = 4Ω 850 mA
Po = 8W, RL = 8Ω 500 mA
Tj
P
Thermal Shutdown Junction

e
145 °C

l e t
Temperature
(*) Referring to Figure 15, single supply.

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TDA2006

Figure 1 : Output Power versus Supply Voltage Figure 2 : Distortion versus Output Power

( s )
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Figure 3 : Distortion versus Frequency Figure 4 :

P r
Distortion versus Frequency

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let
Figure 5 : Sensitivity versus Output Power Figure 6 : Sensitivity versus Output Power

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Ob

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 TDA2006

Figure 7 : Frequency Response with different val- Figure 8 : Value of C8 versus Voltage Gain for dif-
ues of the rolloff Capacitor C8 (see ferent Bandwidths (see Figure 13)
Figure 13)

( s )
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Figure 9 : Quiescent Current versus
P r
Figure 10 : Supply Voltage Rejection versus
Supply Voltage

e t e
Voltage Gain

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Figure 11 : Power Dissipation and Efficiency ver-
sus Output Power
Figure 12 : Maximum Power Dissipation versus
Supply Voltage

O b (sine wave operation)

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 TDA2006

Figure 13 : Application Circuit with Spilt Power Supply

( s )
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Figure 14 : P.C. Board and Components Layout of the Circuit of Figure 13 (1:1 scale)

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 TDA2006

Figure 15 : Application Circuit with Single Power Supply

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Figure 16 : P.C. Board and Components Layout of the Circuit of Figure 15 (1:1 scale)
e
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 TDA2006

Figure 17 : Bridge Amplifier Configuration with Split Power Supply (PO = 24W, VS = ± 12V)

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PRACTICAL CONSIDERATIONS
o l
Printed Circuit Board
The layout shown in Figure 14 should be adopted b sage and the heat-sink with single supply voltage
configuration.
by the designers. If different layout are used, the
ground points of input 1 and input 2 must be well
- O
decoupled from ground of the output on which a
(s ) Application Suggestion
The recommended values of the components are
rather high current flows.
Assembly Suggestion
c t the ones shown on application circuits of Figure 13.
Different values can be used. The table 1 can help

d u
No electrical isolation is needed between the pack- the designers.
Table 1
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Component
e P
Recommanded
Value Purpose Larger Than
Recommanded Value
Smaller Than
Recommanded Value
R1
l e t 22 kΩ
680 Ω
Closed Loop Gain Setting Increase of Gain Decrease of Gain (*)

s
R2
R3o 22 kΩ
Closed Loop Gain Setting
Non Inverting Input
Decrease of Gain (*)
Increase of Input
Increase of Gain
Decrease of Input

O b R4 1Ω
Biasing
Frequency Stability
Impedance
Danger of Oscillation at
High Frequencies with
Impedance

Inductive Loads
R5 3 R2 Upper Frequency Cut-off Poor High Frequencies Danger of Oscillation
Attenuation
C1 2.2 µF Input DC Decoupling Increase of Low
Frequencies Cut-off
C2 22 µF Inverting Input DC Increase of Low
Decoupling Frequencies Cut-off
C3C4 0.1 µF Supply Voltage by Pass Danger of Oscillation
C5C6 100 µF Supply Voltage by Pass Danger of Oscillation
C7 0.22 µF Frequency Stability Danger of Oscillation
1
C8 Upper Frequency Cut-off Lower Bandwidth Larger Bandwidth
2πBR1
D1D2 1N4001 To Protect the Device Against Output Voltage Spikes.
(*) Closed loop gain must be higher than 24dB.

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 TDA2006

SHORT CIRCUIT PROTECTION Figure 19 : Safe Operating Area and Collector

The TDA2006 has an original circuit which limits Characteristics of the Protected
the current of the output transistors. Figure 18 Power Transistor
shows that the maximum output current is a func-
tion of the collector emitter voltage ; hence the
output transistors work within their safe operating
area (Figure 19).
This function can therefore be considered as being
peak power limiting rather than simple current lim-
iting.
It reduces the possibility that the device gets dam-
aged during an accidental short circuit from AC
output to ground.

( s )
THERMAL SHUT DOWN
u ct
The presence of a thermal limiting circuit offers the
o d
following advantages :
1) an overload on the output (even if it is P r
permanent), or an above limit ambient
e e
Figure 20 : Output Power and Drain Current ver-
t
sus Case Temlperature (RL = 4Ω)
temperature can be easily supported since the
Tj cannot be higher than 150°C.
o l
2) the heatsink can have a smaller factor of safety
compared with that of a conventional circuit.
b s
There is no possibility of device damage due to
high junction temperature.
- O
(s )
If for any reason, the junction temperature in-

c t
creases up to 150 °C, the thermal shutdown simply
reduces the power dissipation and the current con-
sumption.
d u
r o
The maximum allowable power dissipation de-
pends upon the size of the external heatsink (i.e.
P
its thermal resistance) ; Figure 22 shows the dissi-
e
e t
pable power as a function of ambient temperature
for different thermal resistances.
l
s o
Figure 18 : Maximum Output Current versus

O b Voltage VCE (sat) accross each Out-

put Transistor
Figure 21 : Output Power and Drain Current ver-
sus Case Temlperature (RL = 8Ω)

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 TDA2006

Figure 22 : Maximum Allowable Power Dissipa- DIMENSION SUGGESTION

tion versus Ambient Temperature The following table shows the length of the heatsink
in Figure 23 for several values of Ptot and Rth.
Ptot (W) 12 8 6
Lenght of Heatsink (mm) 60 40 30
Rth of Heatsink (°C/W) 4.2 6.2 8.3

Figure 23 : Example of Heatsink

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 TDA2006

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX. OUTLINE AND
A 4.80 0.188
C 1.37 0.054
MECHANICAL DATA
D 2.40 2.80 0.094 0.11
D1 1.20 1.35 0.047 0.053
E 0.35 0.55 0.014 0.022
E1 0.76 1.19 0.030 0.047 Weight: 2.00gr
F 0.80 1.05 0.031 0.041
F1 1.00 1.40 0.039 0.055
G 3.20 3.40 3.60 0.126 0.134 0.142
G1 6.60 6.80 7.00 0.260 0.267 0.275
H2 10.40 0.41
H3
L
10.05
17.55 17.85
10.40 0.395
18.15 0.691 0.703
0.409
0.715
( s )
ct
L1 15.55 15.75 15.95 0.612 0.620 0.628
L2
L3
21.2
22.3
21.4
22.5
21.6
22.7
0.831
0.878
0.843
0.886
0.850
0.894
d u
L4
L5 2.60
1.29
3.00 0.102
0.051
0.118
r o
L6 15.10 15.80 0.594 0.622

e P
L7
L9
6.00
2.10
6.60
2.70
0.236
0.083
0.260
0.106

l e t
o
L10 4.30 4.80 0.170 0.189
M
M1
4.23
3.75
4.5
4.0
4.75
4.25
0.167
0.148
0.178
0.157
0.187
0.187
b s Pentawatt V
V4
V5
40˚ (Typ.)
90˚ (Typ.)
- O
DIA 3.65 3.85 0.143

(s )0.151

c tL

u
od
L1 E

P r M1

A
e t e
o l C
D M

bs
D1 V5
L2
L5 H2

O L3

E1
F

E
V4

H3 G G1

Dia.

F1 F
L9
H2
L10 L4
V4

L7 RESIN BETWEEN
L6 LEADS PENTVME
0015981 F

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 TDA2006

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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of STMicroelectronics.

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