PD - 94214A

IRFP264N
HEXFET® Power MOSFET
l Advanced Process Technology D
l Dynamic dv/dt Rating VDSS = 250V
l 175°C Operating Temperature
l Fast Switching RDS(on) = 60mΩ
l Fully Avalanche Rated G
l Ease of Paralleling ID = 44A
l Simple Drive Requirements S

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where

higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247AC

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 44
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 31 A
IDM Pulsed Drain Current  170
PD @TC = 25°C Power Dissipation 380 W
Linear Derating Factor 2.6 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚ 520 mJ
IAR Avalanche Current 25 A
EAR Repetitive Avalanche Energy 38 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 8.7 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.39
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient ––– 40
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 250 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.30 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 60 mΩ VGS = 10V, ID = 25A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 29 ––– ––– S VDS = 25V, ID = 25A„
––– ––– 25 VDS = 250V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 200V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 210 ID = 25A
Qgs Gate-to-Source Charge ––– ––– 34 nC VDS = 200V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 94 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 17 ––– VDD = 30V
tr Rise Time ––– 62 ––– ID = 25A
ns
td(off) Turn-Off Delay Time ––– 52 ––– RG = 1.8Ω
tf Fall Time ––– 53 ––– VGS = 10V, See Fig. 10 „
Between lead, D
LD Internal Drain Inductance ––– 5.0 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 13 –––
and center of die contact S

Ciss Input Capacitance ––– 3860 ––– VGS = 0V

Coss Output Capacitance ––– 480 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 110 ––– pF ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 44
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 170

(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V „
trr Reverse Recovery Time ––– 270 400 ns TJ = 25°C, IF = 25A
Qrr Reverse Recovery Charge ––– 2.7 4.1 µC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
‚ Starting TJ = 25°C, L = 1.7mH
RG = 25Ω, IAS = 25A,VGS=10V
ƒ ISD ≤ 25A, di/dt ≤ 500A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.

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1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V

I D , Drain-to-Source Current (A)

8.0V
I D , Drain-to-Source Current (A)

7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
100 100

4.5V
10 10

4.5V
20µs PULSE WIDTH 20µs PULSE WIDTH
TJ = 25 °C TJ = 175 ° C
1 1
0.1 1 10 100 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 4.0
ID = 42A
RDS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)

TJ = 25 ° C
3.0
100
TJ = 175 ° C
(Normalized)

2.0

10
1.0

V DS = 50V
20µs PULSE WIDTH VGS = 10V
1 0.0
4.0 5.0 6.0 7.0 8.0 9.0 10.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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IRFP264N

8000 20
VGS = 0V, f = 1 MHZ ID = 25A
Ciss = Cgs + Cgd, Cds SHORTED VDS = 200V

VGS , Gate-to-Source Voltage (V)

Crss = Cgd VDS = 125V
16
Coss = Cds + Cgd VDS = 50V
6000
C, Capacitance(pF)

Ciss
12

4000

Coss 8

2000
Crss 4

FOR TEST CIRCUIT

0 SEE FIGURE 13
0
1 10 100 1000 0 40 80 120 160 200
VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)

ID, Drain-to-Source Current (A)

100 100

TJ = 175 ° C
100µsec
10 10
1msec

1 1 10msec
TJ = 25 ° C
Tc = 25°C
Tj = 175°C
V GS = 0 V Single Pulse
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 1000 10000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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50 RD
VDS

VGS
40 D.U.T.
RG
ID , Drain Current (A)

+
-VDD
30
V GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20

Fig 10a. Switching Time Test Circuit

10
VDS
90%
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

1
Thermal Response (Z thJC )

D = 0.50

0.1 0.20

0.10
0.05
0.02 SINGLE PULSE
0.01 (THERMAL RESPONSE) PDM
0.01
t1
t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFP264N

1000
15V ID

EAS , Single Pulse Avalanche Energy (mJ)

TOP 10A
18A
L DRIVER 800 BOTTOM 25A
VDS

RG D.U.T +
V 600
- DD
IAS A
VGS
20V
tp 0.01Ω
400

Fig 12a. Unclamped Inductive Test Circuit

200
V(BR)DSS
tp
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current
I AS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

VGS +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T * • Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• I SD controlled by Duty Factor "D" VDD
-
• D.U.T. - Device Under Test
VGS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% [ISD ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For N-channel HEXFET® power MOSFETs

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TO-247AC Package Outline Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

EXAMPLE: T HIS IS AN IRFPE30
WIT H AS SEMBLY PART NUMBER
LOT CODE 5657 INT ERNAT IONAL
AS SEMBLED ON WW 35, 2000 RECT IFIER IRFPE30

IN T HE ASS EMBLY LINE "H" LOGO 035H

56 57
Note: "P" in assembly line DAT E CODE
position indicates "Lead-Free" AS S EMBLY YEAR 0 = 2000
LOT CODE WEEK 35
LINE H

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/04
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