CHAPTE R 5

MOS Field-Effect Transistors

(MOSFETs)

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Device Structure

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 Operation with Zero Gate Voltage

Two back-to-back diodes, High Resistance (Giga Ohms), No

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Current Flow Copyright © 2010 by Oxford University Press, Inc.
Sedra/Smith
 Creating a Channel for Current Flow

-vGS (gate to source voltage)

-Vt: threshold voltage (vGS which channel
starts conducting)
-Current flowing when vDS applied
-Effective voltage (or overdrive voltage):
vGS − Vt ≡ vOV ≡ veff
-Charge in the channel:
Q = Cox (WL)vOV
-Oxide capacitance: ε ox
Cox =
tox
-Gate to source capacitance:
C = CoxWL
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 Applying a small vDS

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 Applying a small vDS

W
iD = [( µ nCox )( )vOV ]vDS
L
W
iD = [( µ nCox )( )(vGS − Vt ]vDS
L
Conductance gDS of the channel:
W
g DS = ( µ nCox )( )(vGS − Vt )
L

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 Applying a small vDS

Process transconductance
parameter
k 'n = µ nCox
MOSFET transconductance
parameter W
k n = µ nCox ( )
L
MOSFET behaves as a 1
rDS =
linear resistance g DS
1
rDS =
W
( µ nCox )( )(vGS − Vt )
L

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 Operation as vDS is increased

Channel becomes
more tapered and its
resistance increases

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 Operation for vDS>>VOV

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P-Channel
MOSFET

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 P-Channel MOSFET
Threshold voltage
vGS ≤ Vtp
Use absolute value

vGS ≥ Vtp
P-Channel transistor process transconductance parameter

k 'n = µ nCox
P-Channel transistor transconductance parameter
W “Formulae are the same,
k n = µ n Cox ( ) switch sign of voltages”
L

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
 Complementary MOS or CMOS

Figure 5.10 Cross-section of a CMOS integrated circuit. Note that the PMOS
transistor is formed in a separate n-type region, known as an n well. Another
arrangement is also possible in which an n-type body is used and the n device
is formed in a p well. Not shown are the connections made to the p-type body
and to the n well; the latter functions as the body terminal for the p-channel
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device.
 Figure 5.11 (a) Circuit symbol for the n-channel enhancement-type MOSFET.
(b) Modified circuit symbol with an arrowhead on the source terminal to
distinguish it from the drain and to indicate device polarity (i.e., n channel). (c)
Simplified circuit symbol to be used when the source is connected to the body
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or when the effect of the body on device operation is unimportant.
 Table 5.1 Regions of Operation of the
Enhancement NMOS Transistor

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 Figure 5.12 The relative levels of the terminal voltages of the enhancement
NMOS transistor for operation in the triode region and in the saturation region.

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 Figure 5.15 Large-signal equivalent-circuit model of an n-
channel MOSFET operating in the saturation

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Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
 Figure 5.19 (a) Circuit symbol for the p-channel enhancement-type
MOSFET. (b) Modified symbol with an arrowhead on the source
lead. (c) Simplified circuit symbol for the case where the source is
connected to the body.

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 Table 5.2 Regions of Operation of the Enhancement PMOS Transistor

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 Figure 5.20 The relative levels of the terminal voltages of the
enhancement-type PMOS transistor for operation in the triode region
and in the saturation region.

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 Figure E5.7

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 Example 5.3.

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 Example 5.4

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 Example 5.6..

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 Example 5.7.

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