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At moderate kinetic energies (few hundred eV to few keV) ion scattered from
a surface in simple kinematic collision
- interaction distance short (<10 Å)
- scattered from corrugated surface potential
- interaction time short (<1ps)
- little electronic energy transfer
- ion scattered inelastically by simple momentum transfer
Equations based on simple momentum transfer for energy of incident ion (E0),
scattered ion (E1) and displaced surface atom (E2)
2
E1 1 2 M2
= cosθ1 ± A − sin θ1 A= > 1.0
E0 (1 + A)2 M1
E2 4A
= ⋅cos2 θ2
( )
E0 2
1+ A
2
E1 1 2
= cosθ1 ± A − sin θ1
E0 (1+ A) 2
θ1 = 90°, cosθ1 = 0, sin θ1 = 1
becomes
E1 A −1
=
E0 A +1
If we use ion such that A>1 (choices: H+, He+, Ne+, Ar+, Kr+)
If E0, M1, θ1 fixed, measurement of E1 allows unique determination of M2,
mass of scatterer
1 M2
ρ= =
R ∆M 2
5.16.2 Sputtering
In ISS/LEIS surface atom (scatterer) recoils into surface - not accessible for
spectroscopy
But does produce collisional cascade in near-surface region
- may include incident ion
- can lead to multiple secondary collisions
- may lead to ejection of surface atoms or fragments by backscattered
particles in solid
- sputtering yields also vary with incident particle mass - incident ion
type
When used with other techniques (AES, XPS), sputtering can sequentially
remove layers of material and build-up depth distribution of elements
Alternatively, use small fraction of ions produced during desorption (< 1%) -
technique called secondary ion mass spectrometry (SIMS)
But SIMS ions yield depends on surface concentration and sputtering yield -
what about differential sputtering in complex materials?
Example: Compound with bulk composition A0.5B0.5 but with sputtering yields
SA = 1, SB = 3
At time t = 0
AES or XPS analysis = A0.5B0.5 (correct bulk composition)
SIMS analysis = A0.75B0.25 (incorrect bulk composition)
CEM 924 12.18 Spring 2001
At time t > 0
New equilibrium surface concentration established in ratio of sputtering
yields (cA·SA = cB·SB)
AES or XPS analysis = A0.75B0.25 (incorrect bulk composition)
SIMS analysis = A0.5B0.5 (correct bulk composition)
Two extremes:
Static and dynamic SIMS are divided at the static SIMS limit of damage
• Incident ions can cause chemistry and interlayer mixing
• Generally limit incident ion to < 1% of surface species sputtered (< 1% ML)
If 1 ML = 1015 atoms·cm-2
↑ 5 mm Ti bars on Si wafer
I +m = I p ⋅ Sm ⋅ α+ ⋅θ m ⋅ T
where
Im+ = secondary ion emission current
Ip = primary (incident) ion current
Sm = sputtering yield of element m (ions and neutrals)
α+ = proportion of positive ions
θm = fractional coverage of monolayer by element m
T = transmission function of mass analyzer
Ion sources:
Use electronegative incident ion to increase emission of positive species (+ve
SIMS)
O2+ for metal analysis - but reacts with surface?
Use electropositive incident ion to increases emission of negative species (-ve
SIMS)
Cs+, Ga+, In+ for inorganics (F-, Cl-, O-) - liquid metal ion sources
(i) electron beam crossing noble gas or H beam - ions extracted and focussed
electrostatically
- not very bright or finely focussed but rugged
(ii) RF/microwave plasma operated in high pressure noble gas
- Bright, focussed but gradually decreases in brightness
- can use for O2+ beam
Mass analyzers:
(i) Magnetic sector relies on deflection of charged particle in fixed magnetic
field by varying accelerating potential V
0.5
1 2 ⋅ V ⋅ m
- ion radius is R =
B z
m 0.5
- t = L
2 ⋅ z⋅ V
- needs short pulsed ion source
Ion detectors:
(i) Microchannel plate (MCP) emits electrons when struck by ion. Multiple
collisions produce secondary electron cascade that is collected by positively-
charged anode